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Floating gate type field effect transistor memory and manufacturing method thereof

A field effect transistor and memory technology, applied in the field of memory, can solve the problems of reduced memory performance, less obvious memory erasing and writing effects, etc., and achieves the effects of shortened voltage range, high mechanical strength, and strong oxidation resistance.

Active Publication Date: 2020-02-18
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] To sum up, in the above-mentioned work of improving floating gate memory by using two-dimensional materials, most of them are not very obvious in improving the effect of memory erasing and writing. Other properties of

Method used

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  • Floating gate type field effect transistor memory and manufacturing method thereof
  • Floating gate type field effect transistor memory and manufacturing method thereof
  • Floating gate type field effect transistor memory and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0039] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and through specific implementation methods.

[0040] For better illustrating the present invention, facilitate understanding technical scheme of the present invention, typical but non-limiting embodiment of the present invention is as follows:

[0041] 1. Materials, reagents and instruments

[0042] Table 1-1 Main reagent information of the experiment

[0043]

[0044] Table 1-2 Experimental instruments and equipment

[0045]

[0046] 2. Device construction process

[0047] (1) Making a silicon wafer substrate

[0048] In this experiment, a silicon oxide wafer with an oxide layer thickness of 90nm was used as the substrate of the device. In order to facilitate the fabrication of the device, it is first necessary to cut the silicon wafer into 2×2cm with a silicon knife. 2 A small square silicon wafer, and then cleaned to obtain a clean...

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Abstract

The invention relates to a floating gate type field effect transistor memory with a rapid data erasing and writing function and a manufacturing method thereof, which belong to the technical field of memories. In the prior art, the aspect of improving the erasing and writing effects of memories is mostly not very obvious. According to the memory provided by the invention, a silicon wafer with a silicon oxide layer is used as a substrate, the memory sequentially comprises few layers of graphene serving as a floating gate layer, hexagonal boron nitride serving as an insulating layer and novel two-dimensional materials (platinum disulfide and rhenium disulfide) serving as a channel layer from the substrate to the top, and further comprises a source electrode and a drain electrode which are formed on the channel layer by utilizing an evaporation process, and while rapid writing of the data is realized, rapid erasing of the memory data is also realized.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a floating gate type field effect transistor memory with fast erasing and writing of data and a manufacturing method thereof. Background technique [0002] At present, with the advent of the big data era, memory is the key to ensuring that computers perform information processing and memory tasks. There are many types of memory, which can be roughly divided into two categories: volatile memory and non-volatile memory. Volatile memory is represented by dynamic random access memory (DRAM) and static random access memory (SRAM), which have extremely fast data writing However, after the system is powered off, the data in this type of memory cannot be stored for a long time (less than 1ms). Therefore, this type of memory is mainly used for the system memory of the computer ;In contrast to the non-volatile memory represented by flash memory (FLASH), the data stored in it can be effecti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/10H01L29/24H01L29/49H01L29/51H01L29/788H01L21/34H01L27/11521H10B41/30
CPCH01L29/788H01L29/1083H01L29/49H01L29/518H01L29/24H01L29/66969H10B41/30
Inventor 诸葛福伟余军翟天佑陈玉倩
Owner HUAZHONG UNIV OF SCI & TECH
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