Hydrogen terminal diamond / two-dimensional semiconductor monolithic integrated complementary device and preparation method thereof

Abstract

The invention discloses a hydrogen terminal diamond / two-dimensional semiconductor monolithic integrated complementary device and a preparation method thereof. Comprising a diamond substrate, a diamond epitaxial film, a hydrogen terminal two-dimensional hole gas layer, a mesa isolation region, a two-dimensional semiconductor layer, a first source electrode, a first drain electrode, a second source electrode, a second drain electrode, a first gate dielectric layer, a second gate dielectric layer, a first gate electrode and a second gate electrode. The p-type hydrogen terminal diamond and the n-type two-dimensional semiconductor are combined together to prepare the diamond-based semiconductor complementary device, so that a monolithic integrated complementary device on the diamond is realized, the technical problem that an n-type MOS (Metal Oxide Semiconductor) device is difficult to realize by the existing diamond is effectively avoided, the respective advantages of the diamond and the two-dimensional material are fully exerted, and the application prospect is wide. And the high-performance diamond-based monolithic integrated CMOS device is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and specifically to a hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device and a preparation method thereof. Background Art

[0002] At present, wide bandgap semiconductor materials represented by diamond have a high critical breakdown electric field, which can achieve lower capacitance and on-resistance at the same breakdown voltage. They are the core materials supporting the innovative development and transformation and upgrading of industries such as power electronics, 5G mobile communications (5th Generation Mobile Communication Technology) and new energy vehicles.

[0003] The bandgap of diamond is as wide as 5.47eV, the breakdown field strength is as high as 10MV / cm, the carrier mobility is high, and the electron ion is 4500cm 2 / V·s, hole 3800cm 2 / V·s, thermal conductivity up to 22W / (cm·K), Baliga figure of merit is very high, more suitable for the preparation of ultra-high power, ultra-high frequency electronic devices, used in more harsh environments. Studies have found that when hydrogen-terminated diamond treated with hydrogen plasma is exposed to air for a period of time, a layer of two-dimensional hole gas 2DHG will form on its surface, showing p-type conductivity, and the hole concentration is generally 10 12 cm -2 ~10 14 cm -2 , the surface hole mobility is 20cm 2 ·V -1 ·s -1 ~680cm 2 ·V -1 ·s -1 range, so it can be used to prepare high-performance p-type field-effect transistors. As an important component in logic circuit applications, the design of CMOS inverters (Complementary Metal-Oxide-Semiconductor) has always been a research hotspot. In applications, CMOS inverters have the advantages of low static power consumption, large output swing and strong anti-interference ability. However, due to technical limitations, the n-type doping of diamond materials has not yet reached the requirements for the use of electronic devices, so it is impossible to realize CMOS devices made of all diamond materials. Summary of the invention

[0004] The purpose of the present invention is to provide a hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device and preparation method, so as to solve the problem that it is difficult to realize n-type MOS devices with existing diamonds, and utilize the two-dimensional hole gas channel on the surface of the hydrogen terminal and the two-dimensional semiconductor material to respectively realize p-type conductive channel and n-type conductive channel enhancement transistors, thereby realizing a monolithically integrated complementary device on diamond.

[0005] In order to achieve the above object, the technical solution of the present invention is:

[0006] One of the objects of the present invention is to provide a hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, comprising:

[0007] A diamond substrate has an upper surface provided with a diamond epitaxial film layer, a hydrogen-terminated two-dimensional hole gas layer is provided on the upper surface of the diamond epitaxial film layer, and a table isolation region is also provided on the upper surface of the diamond epitaxial film layer located outside the hydrogen-terminated two-dimensional hole gas layer; a second source electrode and a second drain electrode are respectively provided at both ends of the upper surface of the hydrogen-terminated two-dimensional hole gas layer, a second gate electrode is provided on the hydrogen-terminated two-dimensional hole gas layer, and the second gate electrode is located between the second source electrode and the second drain electrode.

[0008] a two-dimensional semiconductor layer, which is arranged on the upper surface of the mesa isolation region and is located on one side of the hydrogen-terminated two-dimensional hole gas layer, a first source electrode and a first drain electrode are respectively arranged at both ends of the upper surface of the two-dimensional semiconductor layer, and a first gate electrode is arranged on the upper surface of the two-dimensional semiconductor layer located between the first source electrode and the first drain electrode;

[0009] The first drain electrode and the second drain electrode are metal interconnected, and the first gate electrode and the second gate electrode are metal interconnected to form a complementary device.

[0010] It should be noted that a portion of the second source electrode and the second drain electrode is located on the upper surface of the hydrogen-terminated two-dimensional hole gas layer to form an ohmic contact, and the other portion is located on the mesa isolation region.

[0011] Furthermore, the second gate dielectric layer is in contact with both the second source electrode and the second drain electrode, and the second gate electrode is located between the second source electrode and the second drain electrode and is not in contact with both the second source electrode and the second drain electrode.

[0012] Furthermore, the first gate dielectric layer is in contact with both the first source electrode and the first drain electrode, and the first gate electrode is not in contact with both the first source electrode and the first drain electrode.

[0013] Furthermore, in the above-mentioned hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, the thickness of the diamond epitaxial thin film layer is 1nm to 100μm, the resistivity is greater than or equal to 100MΩ·cm, the root mean square surface roughness is less than or equal to 0.5nm, and the half-peak width of the Raman curve is less than or equal to 2cm -1 , the half-peak width of the XRD (X-ray diffraction) rocking curve is less than or equal to 30 arcsec.

[0014] Furthermore, in the above hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, the surface carrier concentration in the p-type conductive channel of the hydrogen-terminated two-dimensional hole gas layer is 1×10 12 cm -2 ~5×10 14 cm -2 , the mobility is 20cm 2 / V·s~2500cm 2 / V·s, the thickness of the hydrogen-terminated two-dimensional hole gas layer is 1nm~20nm.

[0015] Furthermore, in the above-mentioned hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, the n-type conductive channel length of the two-dimensional semiconductor layer is 5nm to 100μm, and the thickness is 1 to 8nm, wherein the distance between the first source electrode and the first drain electrode is the n-type conductive channel length; the surface carrier concentration in the n-type conductive channel is 1×10 12 cm -2 ~5×10 14 cm -2 , the mobility is 1cm 2 / V·s~20000cm 2 / V·s.

[0016] Furthermore, in the above-mentioned hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, the two-dimensional semiconductor layer is graphene, MoS2, ReS2, WS2 or WSe2.

[0017] Furthermore, in the above hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, the thickness of the first gate dielectric layer and the second gate dielectric layer are both 0nm to 500nm, and the materials of the first gate dielectric layer and the second gate dielectric layer are SiO2, SiN x , HfO2, Al2O3 or ZrO2, and the first gate dielectric layer and the second gate dielectric layer may also be absent.

[0018] When there are a first gate dielectric layer and a second gate dielectric layer, the second gate dielectric layer is provided on the hydrogen-terminated two-dimensional hole gas layer, the second gate dielectric layer is located between the second source electrode and the second drain electrode, and the second gate electrode is provided on the second gate dielectric layer;

[0019] The first gate dielectric layer is provided on the upper surface of the two-dimensional semiconductor layer between the first source electrode and the first drain electrode, and the first gate electrode is provided on the first gate dielectric layer.

[0020] Furthermore, in the above hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, the thickness of the first source electrode, the first drain electrode, the second source electrode, the second drain electrode, the first gate electrode and the second gate electrode are all 10 nm to 500 nm.

[0021] The second object of the present invention is to provide a method for preparing the above-mentioned hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, comprising the following steps:

[0022] Providing a diamond substrate as a base;

[0023] Depositing a diamond epitaxial thin film layer on a surface of a diamond substrate;

[0024] The surface of the diamond epitaxial thin film layer is hydrogenated to obtain a two-dimensional vacancy gas layer;

[0025] Using photolithography technology to cover part of the two-dimensional hole gas layer with a mask, and etching the remaining two-dimensional hole gas layer, the area covered by the mask forms a hydrogen-terminated two-dimensional hole gas layer as a p-type conductive channel area, and the etched area forms a mesa isolation area;

[0026] Depositing a protective layer on the surface of the hydrogen-terminated two-dimensional hole gas layer;

[0027] transferring the two-dimensional semiconductor material to the surface of the mesa isolation region and the protective layer;

[0028] Using photolithography technology to cover part of the two-dimensional semiconductor material with a mask, with part of the two-dimensional semiconductor material serving as an n-type conductive channel region, and etching away the two-dimensional semiconductor material in the non-n-type conductive channel region to form a two-dimensional semiconductor layer;

[0029] A first source electrode and a first drain electrode are formed at two ends of the two-dimensional semiconductor layer in ohmic contact, and a second source electrode and a second drain electrode are formed at two ends of the hydrogen-terminated two-dimensional hole gas layer in ohmic contact;

[0030] Forming a first gate dielectric layer on the upper surface of the two-dimensional semiconductor layer, and forming a second gate dielectric layer on the upper surface of the terminal two-dimensional hole gas layer;

[0031] Forming a first gate electrode on the upper surface of the first gate dielectric layer, and forming a second gate electrode on the upper surface of the second gate dielectric layer;

[0032] The first drain electrode and the second drain electrode are metal interconnected, and the first gate electrode and the second gate electrode are metal interconnected to form a complementary device. In the complementary device, the hydrogen-terminated two-dimensional hole gas layer serves as a p-type conductive channel, the two-dimensional semiconductor layer serves as an n-type conductive channel, and carriers migrate in the p-type conductive channel and the n-type conductive channel.

[0033] Furthermore, the hydrogenation treatment is to place the sample in a hydrogen plasma or hydrogen atmosphere at 500°C to 900°C for 10s to 2h, with a hydrogen flow rate of 50 to 1000sccm in the hydrogen plasma or hydrogen atmosphere. After the hydrogenation treatment, the carrier concentration of the two-dimensional hole gas layer is 1×10 12 cm -2 ~5×10 14 cm -2 , the mobility is 20cm 2 / V·s~2500cm 2 / V·s.

[0034] Furthermore, during the oxygen plasma etching process, the power is 30W to 300W, and the rate is 1nm / min to 1000nm / min; the protective layer is a metal or dielectric material layer.

[0035] Furthermore, during the mask covering process, the mask material is photoresist, metal or dielectric material.

[0036] Compared with the prior art, the present invention has the following beneficial effects:

[0037] In the complementary device provided by the present invention, hydrogen-terminated two-dimensional hole gas serves as a p-type conductive channel, and a two-dimensional semiconductor serves as an n-type conductive channel, and carriers migrate in the two channels; by combining p-type hydrogen-terminated diamond and n-type two-dimensional semiconductor together to prepare a diamond-based semiconductor complementary device, the technical difficulty that it is difficult to realize n-type MOS devices (Metal-Oxide-Semiconductor Field-Effect Transistor) with diamond is effectively avoided, and the respective advantages of diamond and two-dimensional materials are fully utilized to realize a high-performance diamond-based monolithic integrated CMOS device; diamond and two-dimensional semiconductors have high carrier mobility, and monolithic integration reduces the device spacing, ensuring that the CMOS device has a high switching speed and low loss; diamond has high thermal conductivity and strong radiation resistance, which reduces the junction temperature of the device, ensuring that the CMOS device can be applied to high-performance ultra-wide bandgap semiconductor complementary devices for high-temperature and strong radiation environments, proving that diamond has great potential in the application of integrated circuits. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 is a schematic diagram of the structure of the complementary device of the present invention;

[0039] Figure 2 It is a schematic flow chart of a method for preparing complementary devices according to Embodiment 1 and Embodiment 2 of the present invention;

[0040] Figure 3 is a top view of a complementary device of the present invention;

[0041] Description of reference numerals:

[0042] 1. Diamond substrate, 2. Diamond epitaxial thin film layer, 3. Hydrogen-terminated two-dimensional hole gas layer, 4. Mesa isolation region, 5. Two-dimensional semiconductor layer, 6. First source electrode, 7. First drain electrode, 8. Second source electrode, 9. Second drain electrode, 10. First gate dielectric layer, 11. Second gate dielectric layer, 12. First gate electrode, 13. Second gate electrode, 14. First interconnection line, 15. Second interconnection line. DETAILED DESCRIPTION

[0043] In order to enable those skilled in the art to better understand that the technical solution of the present invention can be implemented, the present invention is further described below in conjunction with specific embodiments and drawings. The described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present invention.

[0044] The present invention provides a hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, comprising:

[0045] A diamond substrate 1, on the upper surface of which a diamond epitaxial thin film layer 2 is provided, the upper surface of the diamond epitaxial thin film layer 2 is provided with a hydrogen-terminated two-dimensional hole gas layer 3, and the upper surface of the diamond epitaxial thin film layer 2 located outside the hydrogen-terminated two-dimensional hole gas layer 3 is also provided with a table isolation region 4; the upper surfaces of the hydrogen-terminated two-dimensional hole gas layer 3 are provided with a second source electrode 8 and a second drain electrode 9 at both ends thereof, the hydrogen-terminated two-dimensional hole gas layer 3 is provided with a second gate electrode 13, and the second gate electrode 13 is located between the second source electrode 8 and the second drain electrode 9;

[0046] A two-dimensional semiconductor layer 5, which is arranged on the upper surface of the mesa isolation region 4 and is located on one side of the hydrogen-terminated two-dimensional hole gas layer 3, a first source electrode 6 and a first drain electrode 7 are respectively provided at both ends of the upper surface of the two-dimensional semiconductor layer 5, and a first gate electrode 12 is provided on the upper surface of the two-dimensional semiconductor layer 5 between the first source electrode 6 and the first drain electrode 7;

[0047] The first drain electrode 7 and the second drain electrode 9 are metal interconnected, and the first gate electrode 12 and the second gate electrode 13 are metal interconnected to form a complementary device.

[0048] The problem that the existing technology cannot realize CMOS devices made of all diamond materials is solved.

[0049] Based on the same inventive concept, the present invention provides a hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, such as Figure 1 and Figure 3 As shown, it includes: a diamond substrate 1, a diamond epitaxial film 2, a hydrogen-terminated two-dimensional hole gas 3, a table isolation region 4, a two-dimensional semiconductor layer 5, a first source electrode 6, a first drain electrode 7, a second source electrode 8, a second drain electrode 9, a first gate dielectric layer 10, a second gate dielectric layer 11, a first gate electrode 12, and a second gate electrode 13; wherein, the diamond substrate 1 has a diamond epitaxial film layer 2 on its upper surface, a hydrogen-terminated two-dimensional hole gas layer 3 is provided on the upper surface of the diamond epitaxial film layer 2, and a table isolation region 4 is also provided on the upper surface of the diamond epitaxial film layer 2 located outside the hydrogen-terminated two-dimensional hole gas layer 3; a second source electrode 8 and a second drain electrode 9 are provided at both ends of the upper surface of the hydrogen-terminated two-dimensional hole gas layer 3, and a hydrogen-terminated two-dimensional hole gas layer 3 is provided on the upper surface of the diamond epitaxial film layer 2. 3 is provided with a second gate dielectric layer 11, the second gate dielectric layer 11 is located between the second source electrode 8 and the second drain electrode 9, and a second gate electrode 13 is provided on the second gate dielectric layer 11; a two-dimensional semiconductor layer 5 is arranged on the upper surface of the mesa isolation region 4 and is located on one side of the hydrogen terminal two-dimensional hole gas layer 3, a first source electrode 6 and a first drain electrode 7 are provided at both ends of the upper surface of the two-dimensional semiconductor layer 5, and a first gate dielectric layer 10 is also provided on the upper surface of the two-dimensional semiconductor layer 5 between the first source electrode 6 and the first drain electrode 7, and a first gate dielectric layer 10 is provided on the first gate dielectric layer 10; the first drain electrode 7 and the second drain electrode 9 are metal interconnected, and the first gate electrode 12 and the second gate electrode 13 are metal interconnected to form a complementary device.

[0050] Part of the second source electrode 8 and the second drain electrode 9 are located on the upper surface of the hydrogen terminal two-dimensional hole gas layer 3 to form an ohmic contact, and the other part is located on the mesa isolation region 4;

[0051] Furthermore, the second gate dielectric layer 11 contacts both the second source electrode 8 and the second drain electrode 9 , and the second gate electrode 13 is located between the second source electrode 8 and the second drain electrode 9 , and does not contact both the second source electrode 8 and the second drain electrode 9 .

[0052] Furthermore, the first gate dielectric layer 10 is in contact with both the first source electrode 6 and the first drain electrode 7 , and the first gate electrode 12 is not in contact with both the first source electrode 6 and the first drain electrode 7 .

[0053] In the present invention, the diamond substrate 1 is a homogeneous or heterogeneous diamond substrate prepared by high temperature and high pressure (HPHT) technology or vapor phase epitaxial deposition (CVD) technology to ensure that a pure diamond substrate 1 can be obtained; the diamond epitaxial film 2 is grown by chemical vapor deposition of diamond material, and the two-dimensional semiconductor layer 5 and the hydrogen-terminated two-dimensional hole gas layer 3 are not in contact with each other through the table isolation region 4. The first drain electrode 7 and the second drain electrode 9 are metal interconnected through the first interconnection line 14, and the first gate electrode 12 and the second gate electrode 13 are metal interconnected through the second interconnection line 15 to form a complementary device. In the complementary device, the hydrogen-terminated two-dimensional hole gas layer 3 serves as a p-type conductive channel, and the two-dimensional semiconductor layer 5 serves as an n-type conductive channel. Carriers migrate in the two channels, and the two-dimensional hole gas layer and the two-dimensional semiconductor material on the surface of the hydrogen terminal are used to respectively realize p-type conductive channel and n-type conductive channel enhancement transistors, thereby realizing a monolithically integrated complementary device on diamond, effectively avoiding the technical difficulties that it is difficult to realize n-type MOS devices with diamond at present, giving full play to the respective advantages of diamond and two-dimensional materials, and realizing a high-performance diamond-based monolithic integrated CMOS device; diamond and two-dimensional semiconductors have high carrier mobility, and monolithic integration reduces the device spacing, ensuring that the CMOS device has a high switching speed and low loss; diamond has high thermal conductivity and strong radiation resistance, which reduces the junction temperature of the device, ensuring that the CMOS device can be applied to high-performance ultra-wide bandgap semiconductor complementary devices for high-temperature and strong radiation environments, proving that diamond has great potential in the application of integrated circuits.

[0054] In a specific embodiment, the diamond epitaxial thin film layer 2 has a thickness of 1 nm to 100 μm, a resistivity greater than or equal to 100 MΩ·cm, a root mean square surface roughness less than or equal to 0.5 nm, and a Raman curve half peak width less than or equal to 2 cm. -1 , the half-peak width of the XRD rocking curve is less than or equal to 30 arcsec.

[0055] In a specific embodiment, the surface carrier concentration of the p-type conductive channel of the hydrogen-terminated two-dimensional hole gas layer 3 is 1×10 12 cm -2 ~5×10 14 cm -2 , the mobility is 20cm 2 / V·s~2500cm 2 / V·s, the thickness of the hydrogen-terminated two-dimensional hole gas layer 3 is 1nm to 20nm. In the process of hydrogenation treatment of the diamond epitaxial film layer 2, the carbon layer on the surface of the single-crystalline diamond film is converted into a carbon-hydrogen terminal layer through hydrogen plasma or hydrogen gas reaction, that is, a two-dimensional hole gas layer is formed in situ on the surface of the single-crystalline diamond film. The hydrogenation treatment is to place the diamond sample in a hydrogen plasma or hydrogen atmosphere, the treatment temperature is 500℃ to 900℃, the hydrogen flow rate in the hydrogen plasma or hydrogen atmosphere is 50 to 1000sccm, the treatment time is 10s to 2h, and the two-dimensional hole gas layer is formed. According to the size of the actual required hydrogen terminal area, the mask is used to cover part of the two-dimensional hole gas layer by photolithography technology, and the remaining two-dimensional hole gas layer is etched by oxygen plasma to form a mesa isolation area 4, and the area covered by the mask forms a hydrogen-terminated two-dimensional hole gas layer 3, and the mesa isolation area 4 is used as an insulating layer to achieve electrical isolation between devices.

[0056] In a specific embodiment, the n-type conductive channel length of the two-dimensional semiconductor layer 5 is 5nm to 100μm, the thickness is 1nm to 8nm, the material of the semiconductor layer includes but is not limited to graphene, MoS2, ReS2, WS2 or WSe2, etc., and the surface carrier concentration in the n-type conductive channel is 1×10 12 cm -2 ~5×10 14 cm -2 , mobility is 1-20000cm 2 / V·s.

[0057] In a specific embodiment, the thickness of the first gate dielectric layer 10 and the second gate dielectric layer 11 are both 0 nm to 500 nm, and the materials of the first gate dielectric layer 10 and the second gate dielectric layer 11 include but are not limited to SiO2, SiN x , HfO2, Al2O3 or ZrO2, etc.

[0058] In a specific embodiment, the thickness of the first source electrode 6, the first drain electrode 7, the second source electrode 8, the second drain electrode 9, the first gate electrode 12 and the second gate electrode 13 are all 10nm to 500nm, and the materials of the first source electrode 6, the first drain electrode 7, the second source electrode 8 and the second drain electrode 9 include but are not limited to Au, Pd, Ir, Pt or Ti, and the materials of the first gate electrode 12 and the second gate electrode 13 include but are not limited to Al, Zr, Hf or Mo, etc.

[0059] The method for preparing the above-mentioned hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device comprises the following steps:

[0060] A diamond substrate 1 is provided as a base, and the diamond substrate 1 is cleaned and dried;

[0061] A diamond epitaxial thin film layer 2 is deposited on the surface of the diamond substrate 1, specifically as follows:

[0062] A diamond epitaxial thin film layer 2 is formed on a diamond substrate 1 by chemical vapor deposition. The diamond epitaxial thin film layer 2 has a thickness of 1 nm to 100 μm, a resistivity of 100 MΩ·cm or more, a root mean square surface roughness of 0.5 nm or less, and a Raman curve half peak width of 2 cm or less. -1 , XRD rocking curve half peak width is less than or equal to 30 arcsec;

[0063] The surface of the diamond epitaxial thin film layer 2 is hydrogenated to obtain a two-dimensional vacancy gas layer, as follows:

[0064] The obtained diamond substrate 1 deposited with the diamond epitaxial thin film layer 2 is placed in a hydrogen plasma or hydrogen atmosphere for hydrogenation treatment. The hydrogenation temperature is 500°C to 900°C for 10s to 2h. The hydrogen flow rate in the hydrogen plasma or hydrogen atmosphere is 50 to 1000sccm to obtain a two-dimensional hole gas layer. The thickness of the two-dimensional hole gas layer is 1 to 20nm, and the carrier concentration is 1×10 12 cm -2 ~5×10 14 cm -2 , the mobility is 20cm 2 / V·s~2500cm 2 / V·s;

[0065] Using photolithography technology to cover part of the two-dimensional hole gas layer with a mask, and performing oxygen plasma etching on the remaining two-dimensional hole gas layer, the area covered by the mask forms a hydrogen-terminated two-dimensional hole gas layer 3 as a p-type conductive channel area, and the etched area forms a mesa isolation area 4;

[0066] A protective layer is deposited on the surface of the terminal hydrogen terminal two-dimensional hole gas layer 3; the deposition method includes but is not limited to chemical vapor deposition, electron beam evaporation deposition, etc., and the protective layer material is a metal or dielectric material, including but not limited to Au, SiO2, Si3N4, etc.;

[0067] transferring the two-dimensional semiconductor material to the upper surface of the mesa isolation region 4 and the protective layer;

[0068] That is, transferring the two-dimensional semiconductor material to the upper surface of the entire sample, and the transfer method includes dry transfer, wet transfer, etc.;

[0069] The mask is used to cover part of the two-dimensional semiconductor material by photolithography technology, and part of the two-dimensional semiconductor material is used as the n-type conductive channel region. The two-dimensional semiconductor material in the non-n-type conductive channel region is etched to form a two-dimensional semiconductor layer 5. The surface carrier concentration of the n-type conductive channel of the two-dimensional semiconductor layer 5 is 1×10 12 cm -2 ~5×10 14 cm -2 , the mobility is 1cm 2 / V·s~20000cm 2 / V·s; when the protective layer is a metal, there is no need to remove the protective layer deposited on the hydrogen-terminated two-dimensional hole gas layer 3; when the protective layer is a dielectric material, the protective layer deposited on the hydrogen-terminated two-dimensional hole gas layer 3 is removed. It should be noted that in order to ensure that the protective layer can be removed, in some feasible embodiments of the present invention, I2 / KI solution, BOE (Buffered Oxide Etch) or hydrofluoric acid immersion is used for removal;

[0070] A first source electrode 6 and a first drain electrode 7 are formed at two ends of the two-dimensional semiconductor layer 5 to make ohmic contacts, and a second source electrode 8 and a second drain electrode 9 are formed at two ends of the hydrogen-terminated two-dimensional hole gas layer 3 to make ohmic contacts;

[0071] A first gate dielectric layer 10 and a second gate dielectric layer 11 are formed on the upper surface of the two-dimensional semiconductor material 5 and the upper surface of the hydrogen-terminated two-dimensional hole gas 3, respectively;

[0072] A first gate electrode 12 and a second gate electrode 13 are formed on the upper surface of the first gate dielectric layer 10 and the upper surface of the second gate dielectric layer 11, respectively;

[0073] The first drain electrode 7 and the second drain electrode 9 are metal interconnected, and the first gate electrode 12 and the second gate electrode 13 are metal interconnected to form a complementary device by using photolithography and deposition technology; Figure 3 As shown, in the complementary device, the first drain electrode 7 and the second drain electrode 9 are metal interconnected by the first interconnection line 14, serving as the output electrode of the complementary device, the first gate electrode 12 and the second gate electrode 13 are metal interconnected by the second interconnection line 15, serving as the input electrode of the complementary device, the first source electrode 6 is grounded, and the second source electrode 8 is connected to the power supply voltage. By combining p-type hydrogen-terminated diamond and n-type two-dimensional semiconductor together to prepare a diamond-based semiconductor complementary device, the current technical difficulty of diamond being difficult to realize n-type MOS devices is effectively circumvented, the respective advantages of diamond and two-dimensional materials are fully utilized, and a high-performance diamond-based monolithic integrated CMOS device is realized.

[0074] In the present invention, the deposition methods include plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), atomic layer deposition (ALD), electron beam evaporation, sputtering, etc., and the photolithography technology includes ultraviolet lithography, electron beam lithography, and step-by-step non-contact lithography.

[0075] The invention is further described below through specific examples.

[0076] Example 1

[0077] Preparation methods for hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary devices, see Figure 2 , including the following steps:

[0078] Step 1, using a diamond substrate standard cleaning process to perform inorganic and organic cleaning on the diamond substrate 1 grown by the high temperature and high pressure technology, and blow drying with nitrogen for standby use. The high temperature and high pressure technology is a conventional process, as long as the diamond substrate 1 can be formed, the present invention will not be further described;

[0079] Step 2, using microwave plasma vapor chemical deposition (MPCVD) technology to deposit a single crystal diamond epitaxial thin film layer 2 on the cleaned diamond substrate, the plasma power is 1kW, the chamber pressure is 100Torr, the total gas flow rate is 500sccm, and the obtained single crystal diamond film has a thickness of 1μm, a resistivity of 100MΩ·cm, a root mean square surface roughness of 0.5nm, and a Raman curve half peak width of 2cm -1 , XRD rocking curve half-peak width 30arcsec;

[0080] Step 3: Control the microwave plasma power so that the chamber temperature is 900°C, maintain the hydrogen flow rate at 50 sccm, and perform hydrogenation treatment on the grown single crystal diamond epitaxial film 2 for 5 min to obtain a two-dimensional hole gas layer. The surface density of the two-dimensional hole gas layer, i.e., the carrier concentration of the two-dimensional hole gas layer after hydrogenation treatment, is 2×10 13 cm -2 , the mobility is 150cm 2 / V·s;

[0081] Step 4, using acetone, isopropanol, and deionized water to ultrasonically clean the sample obtained in step 3, and blow dry; spin-coat a layer of AZ5214 photoresist on the surface of the two-dimensional hole gas layer, bake the sample with the spin-coated photoresist at 90° C. for 90 seconds to remove the photoresist solvent, and use a designed mask to perform ultraviolet lithography exposure for 5 seconds according to the device performance requirements, and develop for 60 seconds, so that the photoresist only covers part of the two-dimensional hole gas layer, and the area covered by the mask forms a hydrogen-terminated two-dimensional hole gas layer 3 as a p-type conductive channel area, and the area not covered by the mask is etched using oxygen plasma to form a mesa isolation area 4, and the surface carrier concentration of the p-type conductive channel of the hydrogen-terminated two-dimensional hole gas layer 3 is 2×10 13 cm -2 , the mobility is 150cm 2 / V·s, and finally acetone was used to remove the photoresist on the sample surface;

[0082] Step 5: Spin-coat a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 4, bake the single crystal diamond sample with the photoresist spun on at 90°C for 90s to remove the photoresist solvent, perform UV lithography exposure for 5s using a designed mask according to the device performance requirements, and develop for 60s to expose the hydrogen-terminated two-dimensional hole gas layer 3; use electron beam evaporation physical vapor deposition to deposit Au with a thickness of 150nm, and the background vacuum degree is 5×10 -4 Pa, after peeling, the protective layer Au on the hydrogen-terminated two-dimensional end hole gas layer 3 is obtained;

[0083] Step 6, using a dry method to transfer the two-dimensional semiconductor layer 5: after using PDMS to adhere the MoS2 material, place the PDMS / MoS2 complex on the sample obtained in step 5, and use acetone to remove the PDMS to complete the material transfer;

[0084] Step 7: Spin-coat a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 6, bake the sample with the photoresist spun on at 90°C for 90s to remove the photoresist solvent, perform UV lithography exposure for 5s using a designed mask according to the device performance requirements, develop for 60s, and deposit Au with a thickness of 150nm using electron beam evaporation physical vapor deposition. The background vacuum is 5×10 -4 Pa, after peeling off, obtain the Au mask pattern; then put the sample into an etcher to etch away the two-dimensional semiconductor material in the non-n-type conductive channel region, leaving only the two-dimensional semiconductor material in the n-type conductive channel region, to form a two-dimensional semiconductor layer 5;

[0085] Step 8, spin-coating a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 7, baking the sample coated with photoresist at 90° C. for 90 seconds to remove the photoresist solvent, performing UV lithography exposure for 5 seconds using a designed mask according to device performance requirements, developing for 60 seconds, and corroding the Au layer at the dielectric layer position using a KI / I2 aqueous solution to obtain an ohmic contact between the first source electrode 6 and the first drain electrode 7, and an ohmic contact between the second source electrode 8 and the second drain electrode 9;

[0086] Step 9: Using the sample obtained in step 8, 100 nm of HfO2 is deposited on the gate dielectric layer by electron beam evaporation, and the background vacuum is 5×10 -4 Pa; taking out the deposited diamond sample, soaking it in an acetone solution for 5 minutes, and obtaining the designed first gate dielectric layer 10 and second gate dielectric layer 11 after peeling;

[0087] Step 10, spin-coating a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 9, baking the single crystal diamond sample with the photoresist spin-coated at 90° C. for 90 seconds to remove the photoresist solvent, performing ultraviolet lithography exposure for 5 seconds using a designed mask according to the device performance requirements, developing for 60 seconds, leaving the first gate electrode and the second gate electrode patterns; placing the photolithographic sample in an electron beam evaporation device, depositing Al with a thickness of 150 nm on the surface of the sample, and obtaining the first gate electrode 12 and the second gate electrode 13 after peeling;

[0088] Step 11, depositing Al metal interconnection lines to realize metal interconnection of the first drain electrode 7 and the second drain electrode 9 through the first interconnection line 14, and metal interconnection of the first gate electrode 12 and the second gate electrode 13 through the second interconnection line 15, and finally obtaining a hydrogen-terminated diamond / MoS2 monolithically integrated complementary device.

[0089] Example 2

[0090] Preparation method of hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, also refer to Figure 2 , including the following steps:

[0091] Step 1, using a diamond substrate standard cleaning process to perform inorganic and organic cleaning on the diamond substrate 1 grown by the high temperature and high pressure technology, and blow drying with nitrogen for standby use. The high temperature and high pressure technology is a conventional process, as long as the diamond substrate 1 can be formed, the present invention will not be further described;

[0092] Step 2, using microwave plasma vapor phase chemical deposition technology to deposit a single crystal diamond epitaxial thin film layer 2 on the cleaned diamond substrate, the plasma power is 1.2kW, the chamber pressure is 100Torr, the total gas flow rate is 500sccm, and the obtained single crystal diamond film has a thickness of 2μm, a resistivity of 120MΩ·cm, a root mean square surface roughness of 0.4nm, and a Raman curve half peak width of 1.9cm -1 , XRD rocking curve half-peak width 28arcsec;

[0093] Step 3: Control the microwave plasma power so that the chamber temperature is 700°C, maintain the hydrogen flow rate at 100 sccm, and perform hydrogenation treatment on the grown single crystal diamond epitaxial film 2 for 20 min to obtain a two-dimensional vacancy gas layer with a surface density of 1×10 13 cm -2 , the mobility is 180cm 2 / V·s;

[0094] Step 4, using acetone, isopropanol, and deionized water to ultrasonically clean the sample obtained in step 3, and blow dry; spin-coat a layer of RN246 photoresist on the surface of the two-dimensional hole gas layer, bake the sample with the spin-coated photoresist at 100° C. for 90 seconds to remove the photoresist solvent, and perform ultraviolet lithography exposure for 5.5 seconds using a designed mask according to the device performance requirements, post-bake for 100 seconds at 103° C., and develop for 80 seconds, so that the photoresist only covers part of the two-dimensional hole gas layer, and the area covered by the mask forms a hydrogen-terminated two-dimensional hole gas layer 3 as a p-type conductive channel area, and the area not covered by the mask is etched using oxygen plasma to form a mesa isolation area 4, and the surface carrier concentration of the p-type conductive channel of the hydrogen-terminated two-dimensional hole gas layer 3 is 1×10 13 cm -2 , the mobility is 180cm 2 / V·s, and finally acetone was used to remove the photoresist on the sample surface;

[0095] Step 5: Spin-coat a layer of RN246 photoresist on the upper surface of the sample obtained in step 4, bake the sample coated with photoresist at 100° C. for 90 seconds to remove the photoresist solvent, perform UV lithography exposure for 5.5 seconds using a designed mask according to the device performance requirements, post-bake for 100 seconds at 103° C., develop for 80 seconds, and expose the hydrogen-terminated two-dimensional hole gas layer 3; use electron beam evaporation physical vapor deposition (EB-PVD) to deposit Au with a thickness of 150 nm, and the background vacuum degree is 5×10 -4 Pa, the protective layer Au on the p-type conductive channel region is obtained after stripping;

[0096] Step 6, using wet transfer to prepare the two-dimensional semiconductor layer 5: first, a PMMA film is spin-coated on the surface of the ReS2 grown on the metal substrate using a coating machine, heated to solidify, then placed in an etching solution to etch the metal substrate, then dried, and the ReS2 / PMMA complex is placed on the sample obtained in step 5 using diamond, and PMMA is removed by washing with acetone, thus completing the transfer step;

[0097] Step 7: Spin-coat a layer of RN246 photoresist on the upper surface of the sample obtained in step 6, bake the sample with the photoresist at 100°C for 90s to remove the photoresist solvent, perform UV lithography exposure for 5.5s using a designed mask according to the device performance requirements, post-bake for 100s at 103°C, develop for 80s, and then use electron beam evaporation physical vapor deposition to deposit 100nm thick SiO2, with a background vacuum of 5×10 -4 Pa, after peeling off, a SiO2 mask pattern is obtained; then the sample is placed in an etcher for etching to remove the two-dimensional semiconductor material in the non-n-type conductive channel region, leaving only the two-dimensional semiconductor material in the n-type conductive channel region, to form a two-dimensional semiconductor layer 5;

[0098] Step 8, spin-coating a layer of RN246 photoresist on the upper surface of the sample obtained in step 7, baking the single crystal diamond sample with the photoresist spin-coated at 100° C. for 90 seconds to remove the photoresist solvent, performing UV lithography exposure for 5.5 seconds using a designed mask according to the device performance requirements, post-baking for 100 seconds at 103° C., developing for 80 seconds, using HF aqueous solution to remove the SiO2 layer at both ends of the two-dimensional semiconductor material, obtaining the pattern of the first source electrode and the first drain electrode, using electron beam evaporation to deposit 100 nm of Au at the source and drain electrode pattern, and obtaining the first source electrode 6 and the first drain electrode 7 ohmic contact after peeling, and the SiO2 retained on the two-dimensional semiconductor layer 5 can be used as the first dielectric layer 10;

[0099] After obtaining the first dielectric layer 10, a layer of RN246 photoresist is spin-coated on the upper surface of the sample, and the single crystal diamond sample with the photoresist spin-coated is baked at 100° C. for 90 seconds to remove the photoresist solvent, and a designed mask is used for UV lithography exposure for 5.5 seconds according to the device performance requirements, and then post-baked at 103° C. for 100 seconds, developed for 80 seconds, and the Au layer at the dielectric layer position of the p-type device is corroded using a KI / I2 aqueous solution to obtain ohmic contacts between the second source electrode 8 and the second drain electrode 9;

[0100] Step 9: Deposit 50 nm thick ZrO2 on the gate dielectric layer of the p-type device using electron beam evaporation, with a background vacuum of 5×10 -4 Pa; taking out the deposited sample, soaking it in an acetone solution for 5 minutes, and obtaining the designed second gate dielectric layer 11 after peeling;

[0101] Step 10, using acetone and deionized water to ultrasonically clean the sample obtained in step 10, and blow dry; spin-coating a layer of RN246 photoresist on the surface of the sample, baking the single crystal diamond sample with the photoresist spun at 100° C. for 90 seconds to remove the photoresist solvent, performing UV lithography exposure for 5.5 seconds using a designed mask according to device performance requirements, post-baking at 103° C. for 100 seconds, developing for 80 seconds to leave a gate electrode pattern, and using electron beam evaporation to deposit a 100nm Al electrode; stripping to obtain a first gate electrode 12 and a second gate electrode 13;

[0102] Step 11, depositing Al metal interconnection lines to realize the interconnection between the first drain electrode 7 and the second drain electrode 9, and the interconnection between the first gate electrode 12 and the second gate electrode 13, and finally obtaining a hydrogen-terminated diamond / ReS2 monolithically integrated complementary device.

[0103] Example 3

[0104] A method for preparing a hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device comprises the following steps:

[0105] Step 1, using a diamond substrate standard cleaning process to perform inorganic and organic cleaning on the diamond substrate 1 grown by vapor phase epitaxial deposition technology, and blow drying with nitrogen for standby use. The vapor phase epitaxial deposition technology is a conventional process, as long as the diamond substrate 1 can be formed, the present invention will not be further described;

[0106] Step 2, using microwave plasma vapor phase chemical deposition technology to deposit a single crystal diamond epitaxial thin film layer 2 on the cleaned diamond substrate, the plasma power is 1.2kW, the chamber pressure is 90Torr, the total gas flow rate is 500sccm, and the obtained single crystal diamond film has a thickness of 2μm, a resistivity of 100MΩ·cm, a root mean square surface roughness of 0.5nm, and a Raman curve half peak width of 2cm -1 , XRD rocking curve half-peak width 40arcsec;

[0107] Step 3: Control the microwave plasma power so that the chamber temperature is 800°C, maintain the hydrogen flow rate at 100 sccm, and perform hydrogenation treatment on the grown single crystal diamond epitaxial film 2 for 10 min to obtain a two-dimensional vacancy gas layer with a surface density of 1×10 13 cm -2 , the mobility is 300cm 2 / V·s;

[0108] Step 4, using acetone, isopropanol, and deionized water to ultrasonically clean the sample obtained in step 3, and blow dry; spin-coat a layer of AZ5214 photoresist on the surface of the two-dimensional hole gas layer, bake the sample with the spin-coated photoresist at 90° C. for 90 seconds to remove the photoresist solvent, and perform ultraviolet lithography exposure for 5 seconds using a designed mask according to the device performance requirements, and develop for 60 seconds, so that the photoresist only covers part of the two-dimensional hole gas layer, and the area covered by the mask forms a hydrogen-terminated two-dimensional hole gas layer 3 as a p-type conductive channel area, and the area not covered by the mask is etched using oxygen plasma to form a mesa isolation area 4, and the surface carrier concentration of the p-type conductive channel of the hydrogen-terminated two-dimensional hole gas layer 3 is 1×10 13 cm -2 , the mobility is 300cm 2 / V·s, and finally acetone was used to remove the photoresist on the sample surface;

[0109] Step 5: Spin-coat a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 4, bake the single crystal diamond sample with the photoresist spun on at 90°C for 90s to remove the photoresist solvent, perform UV lithography exposure for 5s using a designed mask according to the device performance requirements, and develop for 60s to expose the hydrogen-terminated two-dimensional hole gas layer 3; use electron beam evaporation physical vapor deposition to deposit Au with a thickness of 150nm, and the background vacuum degree is 5×10 -4 Pa, after peeling, the protective layer Au on the hydrogen-terminated two-dimensional hole gas layer 3 is obtained;

[0110] Step 6, using a dry method to transfer the two-dimensional semiconductor layer 5: after using PMMA to adhere the graphene material, the PMMA / graphene composite is placed on the sample obtained in step 5, and the PMMA is removed by washing with acetone to complete the material transfer;

[0111] Step 7: Spin-coat a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 6, bake the sample with the photoresist spun on at 90°C for 90 seconds, perform UV exposure for 5 seconds using the designed mask, develop for 60 seconds, and deposit Au with a thickness of 150 nm using electron beam evaporation physical vapor deposition. The background vacuum is 5×10 -4 Pa, after peeling off, obtain the Au mask pattern; then put the sample into an etcher to etch away the two-dimensional semiconductor material in the non-n-type conductive channel region, leaving only the two-dimensional semiconductor material in the n-type conductive channel region, to form a two-dimensional semiconductor layer 5;

[0112] Step 8, spin-coating a layer of AZ5214 photoresist on the upper surface of the sample obtained in step 7, baking the sample coated with photoresist at 90° C. for 90 seconds to remove the photoresist solvent, performing UV lithography exposure for 5 seconds using a designed mask according to device performance requirements, developing for 60 seconds, and corroding the Au layer at the dielectric layer position using a KI / I2 aqueous solution to form an ohmic contact between the first source electrode 6 and the first drain electrode 7, and an ohmic contact between the second source electrode 8 and the second drain electrode 9;

[0113] Step 9: Using the mask pattern in the sample obtained in step 8, Al with a thickness of 500 nm is deposited on the gate dielectric layer using electron beam evaporation. The background vacuum is 5×10 -4 Pa; taking out the deposited diamond sample, soaking it in an acetone solution for 5 minutes, and obtaining the designed first gate electrode 12 and second gate electrode 13 after peeling;

[0114] Step 10, depositing Al metal interconnection lines, realizing metal interconnection of the first drain electrode 7 and the second drain electrode 9 through the first interconnection line 14, and metal interconnection of the first gate electrode 12 and the second gate electrode 13 through the second interconnection line 15, and finally obtaining a hydrogen-terminated diamond / graphene monolithically integrated complementary device.

[0115] It should be noted that the component connection relationships not specifically mentioned in the present invention are assumed to adopt the existing technology. Since they do not involve the invention point and are widely used in the existing technology, the structural connection relationships are not described in detail.

[0116] It should be noted that when the present invention involves a numerical range, it should be understood that the two endpoints of each numerical range and any value between the two endpoints can be selected. Since the steps and methods used are the same as those in the embodiments, in order to avoid redundancy, the present invention describes a preferred embodiment. Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they know the basic creative concept. Therefore, the attached claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0117] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device, characterized in that: include: A diamond substrate (1) is provided with a diamond epitaxial thin film layer (2) on its upper surface, a hydrogen-terminated two-dimensional hole gas layer (3) is provided on the upper surface of the diamond epitaxial thin film layer (2), and a table isolation region (4) is also provided on the upper surface of the diamond epitaxial thin film layer (2) located outside the hydrogen-terminated two-dimensional hole gas layer (3); a second source electrode (8) and a second drain electrode (9) are provided at both ends of the upper surface of the hydrogen-terminated two-dimensional hole gas layer (3), a second gate electrode (13) is provided on the hydrogen-terminated two-dimensional hole gas layer (3), and the second gate electrode (13) is located between the second source electrode (8) and the second drain electrode (9); A two-dimensional semiconductor layer (5), which is arranged on the upper surface of the mesa isolation region (4) and is located on one side of the hydrogen-terminated two-dimensional hole gas layer (3), a first source electrode (6) and a first drain electrode (7) are respectively provided at both ends of the upper surface of the two-dimensional semiconductor layer (5), and a first gate electrode (12) is provided on the upper surface of the two-dimensional semiconductor layer (5) located between the first source electrode (6) and the first drain electrode (7); The first drain electrode (7) and the second drain electrode (9) are metal interconnected, and the first gate electrode (12) and the second gate electrode (13) are metal interconnected to form a complementary device.

2. The hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device according to claim 1, characterized in that: The diamond epitaxial thin film layer (2) has a thickness of 1 nm to 100 μm, a resistivity greater than or equal to 100 MΩ·cm, a root mean square surface roughness less than or equal to 0.5 nm, and a Raman curve half peak width less than or equal to 2 cm. -1 , the half-peak width of the XRD rocking curve is less than or equal to 30 arcsec.

3. The hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device according to claim 1, characterized in that: The surface carrier concentration of the p-type conductive channel of the hydrogen-terminated two-dimensional hole gas layer (3) is 1×10 12 cm -2 ~5×10 14 cm -2 , the mobility is 20cm 2 / V·s~2500cm 2 / V·s, the thickness of the hydrogen-terminated two-dimensional hole gas layer (3) is 1nm to 20nm.

4. The hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device according to claim 1, characterized in that: The n-type conductive channel of the two-dimensional semiconductor layer (5) has a length of 5 nm to 100 μm, a thickness of 1 nm to 8 nm, and a surface carrier concentration of 1×10 12 cm -2 ~5×10 14 cm -2 , the mobility is 1cm 2 / V·s~20000cm 2 / V·s.

5. The hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device according to claim 1, characterized in that: The material of the two-dimensional semiconductor layer (5) is graphene, MoS2, ReS2, WS2 or WSe2.

6. The hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device according to claim 1, characterized in that: The thickness of the first source electrode (6), the first drain electrode (7), the second source electrode (8), the second drain electrode (9), the first gate electrode (12) and the second gate electrode (13) are all 10 nm to 500 nm.

7. The hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device according to claim 1, characterized in that: It also comprises a first gate dielectric layer (10) and a second gate dielectric layer (11), wherein the thickness of the first gate dielectric layer (10) and the second gate dielectric layer (11) are both less than or equal to 500 nm; The second gate dielectric layer (11) is provided on the hydrogen-terminated two-dimensional hole gas layer (3), the second gate dielectric layer (11) is located between the second source electrode (8) and the second drain electrode (9), and the second gate electrode (13) is provided on the second gate dielectric layer (11); The first gate dielectric layer (10) is provided on the upper surface of the two-dimensional semiconductor layer (5) between the first source electrode (6) and the first drain electrode (7), and the first gate electrode (12) is provided on the first gate dielectric layer (10).

8. A method for preparing a hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device according to claim 7, characterized in that: The following steps are involved: Providing a diamond substrate (1) as a base; Depositing a diamond epitaxial thin film layer (2) on the surface of a diamond substrate (1); Performing a hydrogenation treatment on the surface of the diamond epitaxial thin film layer (2) to obtain a two-dimensional vacancy gas layer; Using photolithography technology to cover part of the two-dimensional hole gas layer with a mask, and etching the remaining part of the two-dimensional hole gas layer, so that the area covered by the mask forms a hydrogen-terminated two-dimensional hole gas layer (3) as a p-type conductive channel area, and the etched area forms a mesa isolation area (4); Depositing a protective layer on the surface of the hydrogen-terminated two-dimensional hole gas layer (3); Transferring the two-dimensional semiconductor material to the surface of the mesa isolation region (4) and the protective layer; Using photolithography technology to cover part of the two-dimensional semiconductor material with a mask, with part of the two-dimensional semiconductor material serving as an n-type conductive channel region, and etching away the two-dimensional semiconductor material in the non-n-type conductive channel region to form a two-dimensional semiconductor layer (5); A first source electrode (6) and a first drain electrode (7) are formed at two ends of the two-dimensional semiconductor layer (5) to form ohmic contacts, and a second source electrode (8) and a second drain electrode (9) are formed at two ends of the hydrogen-terminated two-dimensional hole gas layer (3) to form ohmic contacts; A first gate dielectric layer (10) is formed on the upper surface of the two-dimensional semiconductor layer (5), and a second gate dielectric layer (11) is formed on the upper surface of the terminal two-dimensional hole gas layer (3); A first gate electrode (12) is formed on the upper surface of the first gate dielectric layer (10), and a second gate electrode (13) is formed on the upper surface of the second gate dielectric layer (11); The first drain electrode (7) and the second drain electrode (9) are metal interconnected, and the first gate electrode (12) and the second gate electrode (13) are metal interconnected to form a complementary device, in which the hydrogen-terminated two-dimensional hole gas layer (3) serves as a p-type conductive channel, the two-dimensional semiconductor layer (5) serves as an n-type conductive channel, and carriers migrate in the p-type conductive channel and the n-type conductive channel.

9. The method for preparing a hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device according to claim 8, characterized in that: Hydrogenation treatment is to place the sample in hydrogen plasma or hydrogen atmosphere at 500℃~900℃ for 10s~2h. The hydrogen flow rate in hydrogen plasma or hydrogen atmosphere is 50~1000sccm. After hydrogenation treatment, the carrier concentration of the two-dimensional hole gas layer is 1×10 12 cm -2 ~5×10 14 cm -2 , the mobility is 20cm 2 / V·s~2500cm 2 / V·s.

10. The method for preparing a hydrogen-terminated diamond / two-dimensional semiconductor monolithically integrated complementary device according to claim 8, characterized in that: The etching adopts oxygen plasma etching, the power is 30W-300W, and the rate is 1nm / min-1000nm / min.

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