Laser amplifier based on light emitting diode pumping

Abstract

The invention discloses a laser amplifier based on light emitting diode pumping, which comprises a pumping source, a resonant cavity and a gain medium, the pumping source is a light emitting diode, and the light emitting range of the pumping source is matched with the absorption interval of the gain medium; the light-emitting material in the light-emitting diode comprises any two or more of gallium (Ga), arsenic (As), phosphorus (P), nitrogen (N), aluminum (Al) and indium (In); the gain medium comprises one or more of yttrium aluminum garnet, gadolinium gallium garnet, glass, vanadate, tungstate or ceramic, the gain medium body is doped with active ions, and the active ions are one or more of Yb < 3 + >, Nd < 3 + >, Tm < 3 + > or Ho < 3 + >. The method has remarkable technical advantages in the aspects of improving efficiency, reducing cost, increasing applicability, optimizing heat dissipation, improving performance and environmental friendliness and the like.

Description

Technical Field

[0001] The invention belongs to the technical field of solid laser amplifiers, and in particular relates to a laser amplifier based on light emitting diode pumping. Background Art

[0002] Solid-state laser amplifiers are basically composed of a pump source, a resonant cavity, and a gain medium. Among them, the pump source excites the gain medium and pumps the activated particles from the ground state to a high energy level to achieve population inversion, which is an extremely important component in the laser system.

[0003] As a common pump source, xenon lamp has the advantages of low cost, small size, long life and wide spectral range, so it has been widely used in laser systems. However, xenon lamp pump sources also have the problem of low energy utilization. This is mainly because the absorption range of the gain medium is extremely narrow and can only efficiently absorb light of a specific wavelength. Although the spectral range emitted by the xenon lamp is wide, most of the energy is not within the absorption range of the gain medium, resulting in the conversion of this energy into heat energy, which not only wastes energy but may also cause damage to the laser.

[0004] As another potential pump source, laser diodes have the advantage of precise peaks, that is, they can output light of a specific wavelength to match the absorption peak of the gain medium, thereby improving energy utilization. However, laser diodes face several key problems in practical applications: 1) Heat dissipation problem: Laser diodes require an independent heat dissipation system to maintain their collimation during operation. However, heat dissipation devices are usually large in size and difficult to integrate into the laser amplifier cavity, which increases the complexity and cost of the system.

[0005] 2) Small irradiation area: The irradiation area of ​​laser diodes is relatively small, which limits their application in high-power laser devices.

[0006] 3) High cost: The production cost of laser diodes is high, especially when high-power output is required, the cost increases significantly, which limits its popularity in some cost-sensitive applications. Summary of the invention

[0007] The problem to be solved by the present invention is how to obtain a pump light source for a laser amplifier with a narrow peak, adjustable wavelength, low heat dissipation and integrability. This light source can output a specific pump laser according to the absorption spectrum of the gain medium, thereby improving energy utilization, reducing heat radiation, and ultimately improving the working efficiency of the laser amplifier.

[0008] The technical solution of the present invention is: A laser amplifier based on light emitting diode pumping, comprising a pump source, a resonant cavity and a gain medium, wherein the pump source is a light emitting diode, and the light emitting range thereof matches the absorption range of the gain medium; The compound in the light-emitting diode includes any two or more of gallium (Ga), arsenic (As), phosphorus (P), nitrogen (N), aluminum (Al) and indium (In); The gain medium includes one or more of yttrium aluminum garnet, gadolinium gallium garnet, glass, vanadate, tungstate or ceramic, and the gain medium body is doped with activation ions, and the activation ions are Yb 3+ 、Nd 3+ 、Tm 3+ Or Ho 3+ One or more of .

[0009] Preferably, the light-emitting diode material is a II-VI semiconductor, an IV-VI semiconductor, or a III-V semiconductor material, and its emission wavelength is 400-800 nm; wherein, II-VI semiconductors include CdSe, CdS, CdTe, ZnSe, ZnS, ZnTe, ZnO, HgTe, and HgS; IV-VI semiconductors include PbSe, PbS, PbTe, SnSe, SnS, and SnTe; and III-V semiconductors include InP, InAs, InSb, InN, and GaAs.

[0010] Preferably, the morphology of the II-VI semiconductor, IV-VI semiconductor, or III-V semiconductor includes one or more nanostructures selected from the group consisting of quantum dots, nanocubes, nanowires, nanorods, and nanosheets.

[0011] Preferably, the material preparation method includes one or more of crystal epitaxial growth, sol-gel method, chemical deposition method, microwave method, and solvent thermal method.

[0012] Preferably, the light emitting diode is in the shape of a sphere, a rod, a plate, an umbrella or a hexahedron.

[0013] Compared with the prior art, the advantages of the present invention are: 1) Use light-emitting diodes to output pump lasers of specific wavelengths according to the absorption spectrum of the gain medium. This wavelength matching capability ensures that the pump light energy can be efficiently absorbed by the gain medium and converted into laser output, greatly improving energy utilization. In addition, the laser diode generates less heat radiation during operation. 2) The use of semiconductor materials to make light-emitting diodes can transfer and dissipate heat faster, export the heat generated by the laser diode, and keep the system temperature stable.

[0014] 3) The light-emitting range of the light-emitting diode should match the absorption range of the gain medium to the greatest extent possible, so that the electrical energy can be converted into the energy required by the gain medium to the maximum extent possible, thereby improving energy utilization; 4) According to the absorption spectrum of the gain medium, light-emitting diodes with different emission wavelengths can be matched, which can be effectively applied to different types of laser amplifiers and has universal applicability. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 , absorption spectrum of Nd-doped phosphate glass; Figure 2 , Fluorescence spectrum of CdSe / ZnS spherical core quantum dots. DETAILED DESCRIPTION

[0016] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0017] Example 1: The laser amplifier is composed of a light-emitting diode pump source, a reflector, and a gain medium, wherein the light-emitting material in the light-emitting diode is a CdSe / ZnS spherical core quantum dot material synthesized by a sol-gel method, with a particle size of 8nm, a fluorescence peak of 584nm, a half-wave slit width of 16nm, and a quantum conversion efficiency of 96%. The quantum dots with a concentration of 20mg / ml are prepared into a light-emitting diode by a suspension coating method. The test results show that the emission peak of the light-emitting diode is at 585nm, and the characteristic absorption of the neodymium-doped phosphate glass at 584nm is increased by 18%.

[0018] Example 2: The laser amplifier is composed of a light-emitting diode pump source, a reflector, and a gain medium, wherein the light-emitting material in the light-emitting diode is CsPbBr synthesized by a sol-gel method. x I 3-x Perovskite quantum dot material, particle size is 10 nm, fluorescence peak is 581 nm, half-wave slit width is 18 nm, quantum conversion efficiency is 85%. Quantum dots with a concentration of 15 mg / ml were prepared into light-emitting diodes using the suspension coating method. The test results show that the emission peak of the light-emitting diode is at 583 nm, and the characteristic absorption of the gain medium neodymium glass at 584 nm is increased by 9%.

[0019] Example 3: The laser amplifier is composed of a light emitting diode pump source, a reflector, and a gain medium, wherein the GaN:N light emitting diode is prepared by epitaxial growth. Test results show that the emission peak of the light emitting diode is at 590 nm, and the characteristic absorption of the neodymium glass at 584 nm is increased by 18%.

[0020] Example 4: The laser amplifier is composed of a light-emitting diode pump source, a reflector, and a gain medium, wherein the light-emitting material in the light-emitting diode is a phenazine derivative in an organic material. The light-emitting diode is prepared by spraying an organic substance with a concentration of 24 mg / ml. The test results show that the emission peak of the light-emitting diode is at 579 nm, and the characteristic absorption of the neodymium glass at 584 nm is increased by 5%.

[0021] Experiments show that the utilization rate of the present invention is: the luminous range of the light-emitting diode pump source can accurately match the absorption range of the gain medium, which means that the light energy emitted by the pump light source is more effectively absorbed by the gain medium, thereby converting it into laser output. This matching reduces the waste of energy and improves the overall energy utilization rate of the laser amplifier. Since the light-emitting materials of the light-emitting diode include a variety of elements (such as gallium Ga, arsenic As, phosphorus P, nitrogen N, aluminum Al and indium In), it is allowed to achieve light emission of different wavelengths by adjusting the material composition, thereby adapting to the absorption characteristics of different gain media, and increasing the applicability and flexibility of the laser amplifier. The gain medium includes a variety of materials, such as yttrium aluminum garnet, gadolinium gallium garnet, glass, vanadate, tungstate or ceramic, and can be doped with different activation ions (such as Yb3+, Nd3+, Tm3+ or Ho3+), which provides a wide range of options for achieving laser output of different types and characteristics. The morphology of the light-emitting diode can be a nanostructure such as quantum dots, nanocubes, nanowires, nanorods, nanosheets, etc. These different morphologies help to optimize the coupling efficiency of the pump light and the performance of the laser amplifier. The shape of the light-emitting diode can be spherical, rod-shaped, flat, umbrella-shaped or hexahedral. This diversity of shapes helps to adapt to different laser amplifier designs and integration requirements.

[0022] The present invention has been described by the above embodiments, but it should be understood that the above embodiments are only for the purpose of example and description, and are not intended to limit the present invention to the scope of the described embodiments. In addition, it can be understood by those skilled in the art that the present invention is not limited to the above embodiments, and more variations and modifications can be made according to the teachings of the present invention, and these variations and modifications all fall within the scope of the protection claimed by the present invention. The protection scope of the present invention is defined by the attached claims and their equivalents.

Claims

1. A laser amplifier based on light emitting diode pumping, comprising a pump source, a resonant cavity and a gain medium, characterized in that: The pump source is a light emitting diode, whose light emitting range matches the absorption range of the gain medium; The light-emitting material in the light-emitting diode includes any two or more of gallium (Ga), arsenic (As), phosphorus (P), nitrogen (N), aluminum (Al) and indium (In); The gain medium includes one or more of yttrium aluminum garnet, gadolinium gallium garnet, glass, vanadate, tungstate or ceramic, and the gain medium body is doped with activation ions, and the activation ions are Yb 3+ 、Nd 3+ 、Tm 3+ Or Ho 3+ One or more of .

2. The light emitting diode pumped laser amplifier according to claim 1, characterized in that: The light-emitting diode material is a II-VI semiconductor, an IV-VI semiconductor, or a III-V semiconductor material, and its emission wavelength is 400 to 800 nm; wherein the II-VI semiconductors include CdSe, CdS, CdTe, ZnSe, ZnS, ZnTe, ZnO, HgTe, and HgS; the IV-VI semiconductors include PbSe, PbS, PbTe, SnSe, SnS, and SnTe; and the III-V semiconductors include InP, InAs, InSb, InN, and GaAs.

3. The light emitting diode pumped laser amplifier according to claim 2, characterized in that: The morphology of the II-VI semiconductor, IV-VI semiconductor, and III-V semiconductor includes one or more nanostructures of quantum dots, nanocubes, nanowires, nanorods, and nanosheets.

4. The light emitting diode pumped laser amplifier according to claim 3, characterized in that: The preparation method of the material includes one or more of crystal epitaxial growth, sol-gel method, chemical deposition method, microwave method and solvent thermal method.

5. The light emitting diode pumped laser amplifier according to any one of claims 1 to 4, characterized in that: The shape of the light emitting diode is spherical, rod-shaped, flat, umbrella-shaped or hexahedral.

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