IGBT metal piece manufacturing method and IGBT metal piece
By forging in the blasting processing area of IGBT metal parts, the shearing force during punching is reduced, the stamping collapse angle problem is solved, and the current balance and welding quality of the IGBT module are improved.
Patent Information
- Application Number
- CN202411136069.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-19
- Publication Date
- 2024-12-17
AI Technical Summary
The stamping collapse angle formed by the IGBT metal parts during the stamping process affects its contact with the busbar and welding effect, resulting in an imbalance in the current of the IGBT module and affecting normal operation.
By forging in the processing area of the blast material, the height of the forging area is reduced and the shearing force during the punching second cutting area is reduced, thereby reducing the size of the stamping collapse angle. The specific method includes providing tape, punching the first cutting area and the forging area, with the thickness of the forging area D1 (0
The stamping collapse angle of IGBT metal parts is effectively reduced, the contact area with the busbar and the welding quality are improved, the discharge of the IGBT module is avoided, the current balance is improved, and the processing cost is reduced.
Smart Images
Figure CN119141151A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of stamping technology, and in particular to a method for manufacturing an IGBT metal part and an IGBT metal part. Background Art
[0002] IGBT (Insulated Gate Bipolar Transistor) is a composite fully controlled voltage-driven power semiconductor device composed of BJT (Bipolar Junction Transistor) and MOS (Metal-Oxide-Semicon-ductorField-Effect Transistor). IGBT mainly plays a role in connection and transmission, and is widely used in new energy vehicles, industry or photovoltaic semiconductor modules.
[0003] The IGBT module is a modular semiconductor product that is packaged by IGBT and FWD (Freewheeling Diode) through a specific circuit bridge. The packaged IGBT module is directly used in devices such as inverters and UPS (Uninterruptible Power Supply). At present, a metal part that can be wired and welded is required on the IGBT module. The metal part is used to support and fix the IGBT chip and serve as a base for bonding wire connection. The surface where the metal part is connected to other components is the welding surface and the wire bonding surface. Since the metal part is formed by stamping. The punching force during stamping will cause a large stamping collapse angle on the punching edge of the welding surface and the wire bonding surface. The stamping collapse angle will not only cause a gap where the metal part is crimped with the busbar, affecting the crimping and welding effect between the metal part and related components, but also cause the IGBT module to discharge, resulting in current imbalance, which is not conducive to the normal operation of the IGBT module. Summary of the invention
[0004] The embodiments of the present application provide a method for manufacturing an IGBT metal part and an IGBT metal part, which can improve the problem of corner collapse caused by stamping of the IGBT metal part.
[0005] A method for manufacturing an IGBT metal part, the manufacturing method comprising:
[0006] Providing a strip material, punching the strip material to punch out a plurality of connected blanks, the strip material has a thickness of D0, the blank material comprises a first blanking area, a forging area, a second blanking area and a product area for forming an IGBT metal part, the second blanking area is arranged along the periphery of the product area, and part of the outer periphery of the second blanking area is collinear with the periphery of the product area; the first blanking area is located at a side of the second blanking area away from the product area, and the forging area is located between the first blanking area and the second blanking area;
[0007] Punching the first blanking area to separate the first blanking area from the rest of the blank;
[0008] Forging the forged area so that the thickness of the forged area is D1, satisfying: 0<D1<D0;
[0009] Punch out the second blanking area to separate the forging area and the second blanking area from the product area.
[0010] In one embodiment, the forging area is forged multiple times along a direction close to the outer edge of the product area.
[0011] In one embodiment, the processing amount of the multiple forgings gradually decreases in a direction approaching the outer edge of the product area.
[0012] In one embodiment, the machining amount of each forging is between 0.2 mm and 0.66 mm.
[0013] In one embodiment, the second blanking area is punched multiple times along a direction close to the outer edge of the product area.
[0014] In one embodiment, along the direction approaching the outer edge of the product area, the punching processing volume of the multiple second blanking areas gradually decreases.
[0015] In one embodiment, the processing amount of punching the second blanking area each time is between 0.09 mm and 0.35 mm.
[0016] In one embodiment, the first material unloading area includes multiple first sub-material unloading areas, and the multiple first sub-material unloading areas are arranged at intervals around the periphery of the product area; the forging area includes a first forging area, and the multiple first forging areas correspond one-to-one to the first sub-material unloading areas, and the first forging area is arranged around the periphery of the corresponding first sub-material unloading area; the second material unloading area includes a second sub-material unloading area, and the second sub-material unloading area is located between the first forging area and the product area.
[0017] In one embodiment, the forging zone also includes a second forging zone, and the second forging zone is arranged between two adjacent first sub-blank zones; the second blanking zone also includes a third sub-blank zone, and the third sub-blank zone is located between the second forging zone and the product zone; after forging the first forging zone and punching the second sub-blank zone, the second forging zone is forged and the third sub-blank zone is punched.
[0018] In one embodiment, 50% D0≤D1≤80% D1.
[0019] In a second aspect, an embodiment of the present application provides an IGBT metal part, which is manufactured by the aforementioned IGBT metal part manufacturing method.
[0020] Beneficial effects of the embodiments of the present application:
[0021] In the embodiment of the present application, the processing area of the blank is forged before punching the second blanking area to reduce the height of the forged area, so that when punching the second blanking area, the support of the forged area to the second blanking area can be reduced, and the shear force that needs to be overcome when punching the second blanking area to form the edge of the product can be reduced, so that the punching force required for punching the second blanking area is reduced. In this way, the size of the stamping collapse angle formed by the punching of the IGBT metal part can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.
[0023] Figure 1 It is a flowchart of the IGBT metal part manufacturing method provided in the embodiment of the present application;
[0024] Figure 2 It is a schematic flow chart of a method for manufacturing an IGBT metal part provided in an embodiment of the present application;
[0025] Figure 3 It is a schematic diagram of a partial structure of an IGBT metal part provided in an embodiment of the present application;
[0026] Figure 4 It is a schematic diagram of the structure of the blank provided in the embodiment of the present application;
[0027] Figure 5 It is a schematic diagram of the forging process provided by the embodiment of the present application;
[0028] Figure 6 It is a schematic diagram of the process of punching the second blanking area provided in an embodiment of the present application;
[0029] Figure 7 It is a flowchart of another IGBT metal part manufacturing method provided by an embodiment of the present application;
[0030] Figure 8 It is a schematic diagram of the flow chart of the method for manufacturing an IGBT metal part from a top view provided in an embodiment of the present application.
[0031] Reference numerals:
[0032] 001-blanket; 011-product area; 012-first blanking area; 121-first sub-blanking area; 013-forging area; 131-first forging area; 132-second forging area; 014-second blanking area; 141-second sub-blanking area; 142-third sub-blanking area;
[0033] 021-forging die; 022-punching die;
[0034] 003-IGBT metal parts; 004-blanket after forging. DETAILED DESCRIPTION
[0035] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.
[0036] In addition, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
[0037] The terms "comprises," "includes," or any other variation thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.
[0038] In the description of the embodiments of the present application, words such as "example" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "example" or "for example" in the embodiments of the present application is not to be interpreted as being more preferred or having more advantages than another embodiment or design. The use of words such as "example" or "for example" is intended to present relative concepts in a clear manner.
[0039] The IGBT metal part 003 provided in the embodiment of the present application is a connection terminal of the IGBT module, which is used for electrical connection between two electrical parts.
[0040] See also Figure 1 and Figure 2 , Figure 1 is a flowchart of a method for manufacturing an IGBT metal part 003 provided in an embodiment of the present application, Figure 2 003 is a flow chart of a method for manufacturing an IGBT metal part 003 provided in an embodiment of the present application. The embodiment of the present application provides a method for manufacturing an IGBT metal part 003, and the structural diagram of the part of the IGBT metal part 003 that is prone to forming a stamping collapse angle is as follows: Figure 3 As shown, Figure 3 is a partial structural diagram of an IGBT metal part 003 provided in an embodiment of the present application, Figure 3 In the figure, the dotted line indicates the part of the IGBT metal part 003 where the stamping collapse angle is easily formed. The manufacturing method includes:
[0041] S100, providing a strip material, punching the strip material to punch out a plurality of connected blanks 001, the strip material has a thickness of D0, the blank 001 comprises a first blanking area 012, a forging area 013, a second blanking area 014 and a product area 011 for forming an IGBT metal part 003, the second blanking area 014 is arranged along the periphery of the product area 011, and part of the outer periphery of the second blanking area 014 is colinear with the periphery of the product area 011; the first blanking area 012 is located on a side of the second blanking area 014 away from the product area 011, the forging area 013 is located between the first blanking area 012 and the second blanking area 014, as shown in FIG. Figure 4 As shown, Figure 4 It is a schematic diagram of the structure of the blank 001 provided in the embodiment of the present application;
[0042] S200, punching out the first blanking area 012, separating the first blanking area 012 from the rest of the blank 001;
[0043] S300, forging the forging area 013 so that the thickness of the forging area 013 is D1, satisfying: 0<D1<D0;
[0044] S400 , punching out the second blanking area 014 , separating the forging area 013 and the second blanking area 014 from the product area 011 .
[0045] The blank 001 is a metal plate, and the blank 001 of the corresponding metal material is selected according to the performance requirements of the product to be formed. For example, the blank 001 of the IGBT metal part 003 can be a copper clad laminate, specifically a TUC copper clad laminate, and its thickness D0 is 1.5 mm.
[0046] In this embodiment, the processing area of the blank 001 is forged before punching the second blanking area 014 to reduce the height of the forged area, so that when punching the second blanking area 014, the support of the forged area to the second blanking area can be reduced, and the shear force that needs to be overcome when punching the second blanking area 014 to form the edge of the product can be reduced, so that the punching force required for punching the second blanking area 014 is reduced. In this way, the size of the stamping collapse angle of the IGBT metal part 003 formed by punching can be reduced. In this way, not only can the contact surface area of the IGBT metal part 003 and the busbar be increased to improve the crimping and welding quality therebetween, but also the gap between the part where the IGBT metal part 003 is connected to the busbar and the busbar can be made smaller, so as to avoid the discharge of the IGBT module, and thus improve the current balance of the IGBT module.
[0047] In addition, compared with the solution of increasing the number of punching times and reducing the processing amount of each punching to improve the angle collapse, this embodiment does not produce metal debris during forging. In this way, on the one hand, it can avoid the debris splashing and affecting the punching quality; on the other hand, it is not necessary to configure a debris dust collection device, which can control the processing cost of the IGBT metal part 003.
[0048] Among them, the collapse angle of the metal parts formed by conventional stamping is more than 0.1mm, while after adopting the solution of this embodiment, the collapse angle is less than 0.06mm.
[0049] In addition, the relationship between the thickness of the forging zone 013 and the thickness of the blank 001 is further as follows: 50% D0≤D1≤80% D1. It is understood that D1 includes but is not limited to 50% D0, 57% D0, 60% D0, 61.5% D0, 68% D0, 70% D0, 72% D0, 75% D0, and 80% D0.
[0050] See also Figure 5 , Figure 5 It is a schematic diagram of the forging process provided by the embodiment of the present application. In one embodiment, the forging area 013 is forged multiple times along the direction close to the outer edge of the product area 011.
[0051] The processing amount of each forging is in the range of 0.2 mm to 0.66 mm.
[0052] Exemplarily, the same forging area 013 is forged twice. Specifically, the processing amount of the first forging is 0.66 mm, and the processing amount of the second forging is 0.2 mm.
[0053] In this embodiment, through the above arrangement, on the one hand, the punching force of forging can be reduced, thereby avoiding the formation of subsequent punching angle collapse, and on the other hand, the size of the IGBT metal part 003 can be made more precise, which is convenient for the subsequent processing of the second blanking area 014.
[0054] In one embodiment, the processing amount of multiple forgings gradually decreases along a direction approaching an outer edge of the product area 011 .
[0055] In this embodiment, through the above arrangement, the closer to the product area 011, the smaller the forging amount. In this way, on the one hand, it can avoid damage to the surface of the product area 011 when the forging amount is too large, and improve the surface quality of the product area 011; on the other hand, the forging near the product area 011 can have a smaller amount of processing, which helps to gradually release the processing stress, thereby improving the reliability of the product structure and improving the forming of the stamping collapse angle.
[0056] See also Figure 6 , Figure 6 014 is a schematic diagram of a process of punching the second blanking area 014 provided in an embodiment of the present application. In one embodiment, the second blanking area 014 is punched multiple times along a direction close to the outer edge of the product area 011.
[0057] The processing amount of punching the second blanking area 014 each time is between 0.09 mm and 0.35 mm.
[0058] Exemplarily, the same second blanking area 014 is punched twice. Specifically, the processing amount of the first punching is 0.2 mm, and the processing amount of the second punching is 0.09 mm.
[0059] In this embodiment, through the above-mentioned setting, on the one hand, the punching force of blanking can be reduced, thereby avoiding the formation of punching angle collapse, and on the other hand, the size of the IGBT metal part 003 can be made more precise, thereby improving the dimensional accuracy of the IGBT metal part 003.
[0060] In one embodiment, along the direction approaching the outer edge of the product area 011 , the punching processing amount of the multiple second blanking areas 014 gradually decreases.
[0061] In this embodiment, through the above arrangement, the closer to the product area 011, the smaller the punching processing amount. In this way, on the one hand, it can avoid damage to the surface of the product area 011 when the punching processing amount is too large, and improve the surface quality of the product area 011; on the other hand, the punching processing amount near the product area 011 can be smaller, which helps to gradually release the processing stress, thereby improving the reliability of the product structure and improving the forming of the stamping collapse angle.
[0062] In one embodiment, the blanking gap for blanking that separates the forging area 013 and the second blanking area 014 from the product area 011 is D2, which satisfies: 0.02% D0≤D2≤0.06% D0.
[0063] In this embodiment, the processing area to be punched out is first thinned by forging, so as to reduce the punching force required for subsequent punching, thereby reducing the punching gap. In this way, the manufacturing accuracy of the IGBT metal part 003 can be further improved, and the forming of the stamping collapse angle can be improved.
[0064] See also Figure 4 In one embodiment, the first material unloading area 012 includes a plurality of first sub-material unloading areas 121. The plurality of first sub-material unloading areas 121 are arranged at intervals around the periphery of the product area 011. The forging area 013 includes a first forging area 131. The plurality of first forging areas 131 correspond to the first sub-material unloading areas 121 one by one. The first forging area 131 is arranged around the periphery of the corresponding first sub-material unloading area 121. The second material unloading area 014 includes a second sub-material unloading area 141, and the second sub-material unloading area 141 is located between the first forging area 131 and the product area 011.
[0065] It can be understood that the first blanking area 012 is arranged at least adjacent to a portion of the IGBT metal part 003 that is easy to be formed and stamped.
[0066] In this embodiment, by setting multiple first sub-cutting areas 121, multiple first forging areas 131 and multiple second sub-cutting areas 141, the quality of multiple parts of the IGBT metal part 003 that are easy to form and stamp collapse can be improved, thereby improving the overall manufacturing accuracy and structural stability of the IGBT metal part 003.
[0067] See also Figure 4 In one embodiment, the forging area 013 further includes a second forging area 132. The second forging area 132 is disposed between two adjacent first sub-blank areas 121. The second blanking area 014 further includes a third sub-blank area 142. The third sub-blank area 142 is located between the second forging area 132 and the product area 011. After forging the first forging area 131 and punching the second sub-blank area 141, the second forging area 132 is forged and the third sub-blank area 142 is punched.
[0068] In this embodiment, through the above-mentioned arrangement, after the punching of the second sub-blank area 141 is completed, the product area 011 is connected to the remaining area of the blank 001 through the second forging area 132 and the third sub-blank area 142, thereby reducing the deformation of the product area 011 during the punching process in the second sub-blank area 141, so as to improve the forming of the stamping collapse angle, and further help maintain the dimensional accuracy of the IGBT metal part 003.
[0069] Based on the above embodiments, the manufacturing method of the IGBT metal part 003 provided in this application is summarized to obtain the following contents:
[0070] like Figure 7 and Figure 8 As shown, Figure 7 is a flowchart of another method for manufacturing an IGBT metal part 003 provided in an embodiment of the present application. Figure 8 1 is a schematic diagram of a process for manufacturing an IGBT metal part 003 from a top view provided in an embodiment of the present application. The method for manufacturing an IGBT metal part 003 includes:
[0071] S100, providing a strip material, punching the strip material to punch out a plurality of connected blanks 001, the strip material has a thickness of D0, the blank 001 comprises a first blanking area 012, a forging area 013, a second blanking area 014 and a product area 011 for forming an IGBT metal part 003, the second blanking area 014 is arranged along the periphery of the product area 011, and part of the outer periphery of the second blanking area 014 is collinear with the periphery of the product area 011; the first blanking area 012 is located on a side of the second blanking area 014 away from the product area 011, and the forging area 013 is located between the first blanking area 012 and the second blanking area 014;
[0072] The first material unloading area 012 includes a plurality of first sub-material unloading areas 121; the plurality of first sub-material unloading areas 121 are arranged at intervals around the periphery of the product area 011;
[0073] The forging area 013 includes a first forging area 131 and a second forging area 132; a plurality of first forging areas 131 correspond to the first sub-material blanking areas 121 one by one; the first forging area 131 is arranged around the periphery of the corresponding first sub-material blanking area 121. A second forging area 132 is arranged between two adjacent first sub-material blanking areas 121.
[0074] The second blanking area 014 includes a second sub-blanking area 141 and a third sub-blanking area 142 . The second sub-blanking area 141 is located between the first forging area 131 and the product area 011 ; the third sub-blanking area 142 is located between the second forging area 132 and the product area 011 .
[0075] S200, punching out the first sub-blank area 121, separating the first sub-blank area 121 from the rest of the blank 001;
[0076] S300, forging the first forging area 131 so that the thickness of the forging area 131 is D1, satisfying: 0<D1<D0; and the same first forging area 131 is forged twice; the processing amount of the first forging is 0.66mm; the processing amount of the second forging is 0.2mm;
[0077] S400, punching the second sub-blank area 141 to separate the second sub-blank area 141 from the product area 011; and the punching times for the same second sub-blank area 141 are twice. The processing amount of the first punching is 0.2mm; the processing amount of the second punching is 0.09mm;
[0078] S500, forging the second forging area 132 so that the thickness of the forging area 132 is D1, which satisfies: 0<D1<D0; and the same second forging area 132 is forged twice; the processing amount of the first forging is 0.66mm; the processing amount of the second forging is 0.2mm;
[0079] S400, punching the third sub-blank area 142, separating the third sub-blank area 142 from the product area 011; and punching the same third sub-blank area 142 twice. The processing amount of the first punching is 0.2 mm; the processing amount of the second punching is 0.09 mm.
[0080] Correspondingly, an embodiment of the present application provides an IGBT metal part 003 , which is manufactured by the aforementioned IGBT metal part 003 manufacturing method.
[0081] In this embodiment, the IGBT metal part 003 is made by adopting the aforementioned IGBT metal part 003 manufacturing method, so that some stamping parts of the obtained IGBT metal part 003 do not form stamping collapse angles, and the stamping collapse angles formed by the rest are small, which is 0.04-0.06mm. In this way, not only can the contact surface area of the IGBT metal part 003 and the busbar be increased to improve the crimping and welding quality therebetween, but also the gap between the part where the IGBT metal part 003 is connected to the busbar and the busbar can be made smaller, thereby avoiding the discharge of the IGBT module, and further improving the current balance of the IGBT module.
[0082] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of the present application. At the same time, for technical personnel in this field, according to the idea of the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.
Claims
1. A method for manufacturing an IGBT metal part, characterized in that: include: Providing a strip material, punching the strip material to punch out a plurality of connected blanks, the strip material having a thickness of D0, the blank material comprising a first blanking area, a forging area, a second blanking area, and a product area for forming an IGBT metal part, the second blanking area being arranged along the periphery of the product area, and a portion of the outer periphery of the second blanking area being collinear with the periphery of the product area; the first blanking area being located at a side of the second blanking area away from the product area, and the forging area being located between the first blanking area and the second blanking area; Punching the first blanking area to separate the first blanking area from the rest of the blank; Forging the forged area so that the thickness of the forged area is D1, satisfying: 0<D1<D0; The second blanking area is punched out to separate the forging area and the second blanking area from the product area.
2. The IGBT metal part manufacturing method according to claim 1, characterized in that: The forging area is forged multiple times along a direction close to the outer edge of the product area.
3. The IGBT metal part manufacturing method according to claim 2, characterized in that: The processing amount of the multiple forgings gradually decreases in a direction approaching the outer edge of the product area.
4. The IGBT metal component manufacturing method according to claim 2, characterized in that: The processing amount of each forging is between 0.2 mm and 0.66 mm.
5. The IGBT metal component manufacturing method according to claim 1, characterized in that: The second blanking area is punched multiple times along a direction close to the outer edge of the product area.
6. The method for manufacturing an IGBT metal part according to claim 5, characterized in that: Along the direction approaching the outer edge of the product area, the punching processing amount of the second blanking area is gradually reduced.
7. The method for manufacturing an IGBT metal part according to claim 5 or 6, characterized in that: The processing amount of punching the second blanking area each time is between 0.09 mm and 0.35 mm.
8. The method for manufacturing an IGBT metal part according to any one of claims 1 to 6, characterized in that: The first material unloading area includes a plurality of first sub-material unloading areas, and the plurality of first sub-material unloading areas are arranged at intervals around the periphery of the product area; The forging area includes a first forging area, a plurality of the first forging areas correspond to the first sub-blank area one by one, and the first forging area is arranged around the periphery of the first sub-blank area corresponding thereto; The second material unloading area includes a second sub-material unloading area, and the second sub-material unloading area is located between the first forging area and the product area.
9. The method for manufacturing an IGBT metal part according to claim 8, characterized in that: The forging area further includes a second forging area, and the second forging area is arranged between two adjacent first sub-unloading areas; The second material unloading area further includes a third sub-material unloading area, and the third sub-material unloading area is located between the second forging area and the product area; After forging the first forging area and punching out the second sub-blank area, forging the second forging area and punching out the third sub-blank area.
10. The method for manufacturing an IGBT metal part according to any one of claims 1 to 6, characterized in that: 50%D0≤D1≤80%D1.
11. An IGBT metal part, characterized in that: The IGBT metal part is manufactured by the IGBT metal part manufacturing method according to any one of claims 1 to 10.