Photoelectric detector based on ferroelectric domain wall
A photodetector utilizing ferroelectric domain walls in ferroelectric crystals addresses the limitations of existing photodetectors by forming electrodes from domain walls to generate voltage and current signals, enhancing photoelectric detection efficiency and simplifying fabrication.
Patent Information
- Application Number
- CN202411151119.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-21
- Publication Date
- 2024-12-17
AI Technical Summary
Current photodetectors fail to leverage the conductive properties of the domain wall of ferroelectric crystals for photodetection, particularly in lithium niobate materials, which are limited by complex processes and low practicality in heterogeneous integration.
A photodetector based on the conductivity of the domain walls of ferroelectric crystals, which are constructed with positive and negative domains, metal films, waveguides, insulating layers, substrates, and electrodes, where the domain walls are connected to form electrodes to generate voltage and current signals.
The photodetector effectively harnesses the conductive properties of ferroelectric domain walls to generate voltage and current signals, leveraging the photovoltaic effect for efficient photoelectric detection, with enhanced sensitivity and simplicity in fabrication.
