Sealing ring for electroplating equipment and electroplating equipment

Abstract

The invention discloses a sealing ring for electroplating equipment and the electroplating equipment. The sealing ring is in contact sealing with a semiconductor wafer when the semiconductor wafer is electroplated so as to define an electroplating area and a peripheral area, and the sealing ring comprises a sealing ring body and an elastic element. The sealing ring body is provided with an outer side edge and an inner side edge, the outer side edge is used for fixing the sealing ring body, the inner side edge is used for being in contact sealing with a semiconductor wafer, and the elastic element is arranged in the inner side edge of the sealing ring body. The inner side edge comprises a platform portion and a flange portion protruding upwards from the free tail end of the platform portion, and the elastic element is at least arranged in the flange portion. When the pressure applied to the flange part by the semiconductor wafer exceeds a preset threshold value, the elastic element provides upward elastic force for the flange part, so that the semiconductor wafer is propped upwards when the pressure applied to the semiconductor wafer is eliminated. The sealing ring provided by the invention can overcome the bonding between the semiconductor wafer and the sealing ring, and facilitates the separation of the semiconductor wafer. The electroplating equipment provided by the invention comprises the sealing ring.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a sealing ring for electroplating equipment and the electroplating equipment. Background Art

[0002] Electroplating of semiconductor wafers is the process of electrochemically depositing the desired metal on the wafer using electroplating equipment. Electroplating is widely used in the manufacturing and packaging of semiconductor chips. Semiconductor wafer electroplating equipment usually includes a support module and a crimping module. The semiconductor wafer is crimped between the support module and the crimping module, and the edge of the semiconductor wafer is sealed by a lip seal, so that one surface of the semiconductor wafer is exposed to the plating medium to achieve electroplating.

[0003] During the electroplating process, a photoresist layer, also known as photoresist, may be used on the semiconductor wafer to mask areas where electroplating is not desired. The photoresist layer may extend to within 2-4 mm of the edge of the semiconductor wafer and may be present in the interface between the lip seal and the semiconductor wafer. Over time, photoresist residue may accumulate on the lip seal, and the residual photoresist may cause the semiconductor wafer to adhere to the lip seal after the electroplating operation is completed, making it difficult to separate the semiconductor wafer from the support module. In addition, residual components from the plating solution may also form residues on the lip seal, which may further cause the semiconductor wafer to adhere to the lip seal.

[0004] Based on this, it is necessary to propose a technical solution to overcome the shortcomings of the existing technology. Summary of the invention

[0005] In order to overcome the defects of the prior art, the present invention proposes a sealing ring for electroplating equipment and the electroplating equipment, which can overcome the adhesion of semiconductor wafers and facilitate the separation of the semiconductor wafers and the sealing ring.

[0006] The present invention is implemented by the following technical solution: a sealing ring for electroplating equipment, which contacts and seals with a semiconductor wafer during electroplating of the semiconductor wafer to define an electroplating area and a peripheral area, and the sealing ring comprises: a sealing ring body having an outer edge and an inner edge, wherein the outer edge is used for fixing the sealing ring body and the inner edge is used for contacting and sealing with the semiconductor wafer; and an elastic element, disposed in the inner edge of the sealing ring body; Wherein, the inner edge includes a platform portion and a flange portion protruding upward from a free end of the platform portion, and the elastic element is at least arranged in the flange portion; When the pressure exerted on the flange by the semiconductor wafer exceeds a preset threshold, the elastic element provides an upward elastic force on the flange, so that the semiconductor wafer is pushed upward when the pressure on the semiconductor wafer is eliminated.

[0007] As a further improved technical solution, the stiffness of the elastic element is greater than the stiffness of the flange portion.

[0008] As a further improved technical solution, the elastic element includes a transverse plate portion located in the platform portion and a protruding portion located in the flange portion.

[0009] As a further improved technical solution, the inner edge is a plastic part, and the elastic element is injection-molded inside the inner edge.

[0010] As a further improved technical solution, the material of the elastic element is perfluoropolymer, silicon sulfide or metal tungsten.

[0011] As a further improved technical solution, the elastic element has a radial width of 1.5-2.55 mm and a thickness of 0.06-0.6 mm.

[0012] As a further improved technical solution, there is a spacing between the top end of the raised portion of the elastic element and the top surface of the flange portion inside the flange portion, and the flange portion forms a sealing gasket layer in the spacing portion. When the flange portion is under pressure, the sealing gasket layer elastically deforms before the elastic element.

[0013] As a further improved technical solution, the top end of the raised portion of the elastic element is arranged non-parallel to the top surface of the flange portion.

[0014] As a further improved technical solution, a closed chamber is provided inside the inner edge of the sealing ring body, and the chamber is filled with a fluid or semi-fluid medium. The medium can flow when under pressure and return to a state before being under pressure when not under pressure. The medium fills the chamber to form the elastic element.

[0015] The present invention is also implemented through the following technical solution: an electroplating device, which includes a supporting module, a crimping module and a sealing ring for the electroplating device as described above, a placement groove for placing the semiconductor wafer is formed between the crimping module and the supporting module, and the sealing ring is fixed on the supporting module and arranged around the circumference of the placement groove.

[0016] The sealing ring for electroplating equipment provided by the present invention comprises a sealing ring body and an elastic element, wherein the sealing ring body has an outer edge and an inner edge, the outer edge is used for fixing the sealing ring body, and the inner edge is used for contacting and sealing with the semiconductor wafer; the elastic element is arranged in the inner edge of the sealing ring body; the inner edge comprises a platform portion and a flange portion protruding upward from the free end of the platform portion, and the elastic element is at least arranged in the flange portion; when the pressure applied by the semiconductor wafer to the flange portion exceeds a preset threshold, the elastic element provides an upward elastic force to the flange portion, so that when the pressure on the semiconductor wafer is eliminated, the semiconductor wafer is pushed upward, which helps to overcome the adhesion between the semiconductor wafer and the sealing ring and facilitates the separation of the semiconductor wafer from the sealing ring. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the three-dimensional structure of the electroplating equipment of the present invention.

[0018] Figure 2 It is a schematic diagram of a semiconductor wafer in the electroplating equipment of the present invention.

[0019] Figure 3 It is a schematic diagram of a semiconductor wafer and a sealing ring of the present invention before being crimped.

[0020] Figure 4 It is a schematic diagram of a semiconductor wafer and a sealing ring of the present invention after being crimped.

[0021] Figure 5 yes Figure 4 A partial enlarged view of point A in the middle.

[0022] Figure 6 It is a partially enlarged schematic diagram of another embodiment of the sealing ring of the present invention cooperating with a semiconductor wafer.

[0023] Figure 7 It is a cross-sectional view of another embodiment of the sealing ring of the present invention.

[0024] Figure 8 yes Figure 7 A partial enlarged view of point B in the middle.

[0025] The figure numbers are as follows: 10, support module; 20, crimping module; 30, main shaft; 40, connecting plate; 50, motor; 1, base member; 2, sealing ring body; 201, outer edge; 202, inner edge; 21, platform portion; 22, flange portion; 221, sealing gasket layer; 3, contact element; 4, elastic element; 41, cross plate portion; 42, raised portion; 401, chamber; 402, medium; 5, crimping member; 6, semiconductor chip. DETAILED DESCRIPTION

[0026] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, specific embodiments of the present invention are now described in detail with reference to the accompanying drawings.

[0027] The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0028] See also Figures 1 to 8 As shown, the present application provides a sealing ring for electroplating equipment. The sealing ring contacts and seals with the semiconductor wafer 6 during electroplating of the semiconductor wafer 6 to define an electroplating area and a peripheral area.

[0029] The sealing ring includes a sealing ring body 2 and an elastic element 4. The sealing ring body 2 has an outer edge 201 and an inner edge 202. The outer edge 201 is used to fix the sealing ring body 2, and the inner edge 202 is used to contact and seal with the semiconductor wafer 6. The elastic element 4 is arranged in the inner edge 202 of the sealing ring body 2. The inner edge 202 includes a platform portion 21 and a flange portion 22 protruding upward from the free end of the platform portion 21, and the elastic element 4 is at least arranged in the flange portion 22. When the pressure applied by the semiconductor wafer 6 to the flange portion 22 exceeds a preset threshold, the elastic element 4 provides an upward elastic force to the flange portion 22, so that when the pressure on the semiconductor wafer 6 is eliminated, the semiconductor wafer 6 is pushed upward.

[0030] The sealing ring for electroplating equipment provided by the present invention includes an elastic element 4. When the pressure applied to the flange portion 22 by the semiconductor chip 6 exceeds a preset threshold, the elastic element 4 provides an upward elastic force to the flange portion 22, so that when the pressure on the semiconductor chip 6 is eliminated, the semiconductor chip 6 is pushed upward, which helps to overcome the adhesion between the semiconductor chip 6 and the sealing ring caused by the residual plating solution and the residual photoresist, and is beneficial to the separation of the semiconductor chip 6 from the sealing ring.

[0031] See also Figure 1As shown, the sealing ring provided by the present application is used in an electroplating device for electroplating a semiconductor wafer 6. In one embodiment, the electroplating device includes a support module 10, a crimping module 20, a main shaft 30, a connecting plate 40, and a motor 50. The motor 50 is connected to the crimping module 20 through the connecting plate 40 and the main shaft 30. A placement groove for placing the semiconductor wafer 6 is formed between the crimping module 20 and the support module 10. The sealing ring is fixed on the support module 10 and is arranged around the circumference of the placement groove. During electroplating, the motor 50 transmits torque to the crimping module 20 through the main shaft 30, and can drive the semiconductor wafer 6 to rotate. A cylinder is also arranged in the main shaft 30, which can provide a vertical force for clamping the semiconductor wafer 6 between the crimping module 20 and the support module 10. After the semiconductor wafer 6 is inserted between the crimping module 20 and the support module 10, the crimping module 20 and the support module 10 engage to fix the semiconductor wafer 6 in the electroplating device, and expose one working surface of the semiconductor wafer 6 for contact with the electrolyte solution.

[0032] Please refer to Figure 2 As shown, the support module 10 includes a base member 1, and the sealing ring is fixed on the base member 1. The crimping module 20 includes a crimping member 5, and the crimping member 5 applies a downward force to the semiconductor wafer 6 to crimp the semiconductor wafer 6 onto the sealing ring.

[0033] The sealing ring includes a sealing ring body 2. The sealing ring body 2 has an outer edge 201 and an inner edge 202. The outer edge 201 is used for fixing the sealing ring body 2 to the base member 1, and the inner edge 202 is used for contact sealing with the semiconductor wafer 6. In this embodiment, the outer edge 201 is generally in a "U" shape with an upward opening, and a crimping locking ring can be installed in the upward opening to connect and fix the outer edge 201 to the base member 1. Please refer to Figure 3 As shown, the inner edge 202 includes a platform portion 21 and a flange portion 22 protruding upward from the free end of the platform portion 21. The platform portion 21 extends horizontally and is also supported on the base member 1. The flange portion 22 extends vertically, and the semiconductor wafer 6 is in contact with the flange portion 22 to achieve sealing. The inner edge 202 is lower than the outer edge 201, and the outer edge 201 and the inner edge 202 are connected by an inclined portion, so that the placement groove of the support module 10 is in a bowl shape, which is convenient for placing the semiconductor wafer 6.

[0034] Please continue to refer to Figure 2As shown, the base member 1 is also provided with a contact element 3, and the contact element 3 is located above the sealing ring. The contact element 3 is used to electrically contact the semiconductor wafer 6 to achieve electrical connection between the semiconductor wafer 6 and other electrical devices, so as to achieve the electroplating deposition process of the electroplating layer on the semiconductor wafer 6. The end of the contact element 3 that contacts the semiconductor wafer 6 is elastically tilted to elastically contact the semiconductor wafer 6. Of course, the elastic contact between the contact element 3 and the semiconductor wafer 6 must not affect the sealing contact between the semiconductor wafer 6 and the sealing ring.

[0035] See also Figures 2 to 5 As shown, the semiconductor chip 6 contacts the flange portion 22 of the sealing ring body 2 to achieve sealing. The flange portion 22 is a continuous circular ring, the area enclosed by it is the electroplating area, and the area outside it is the peripheral area. Although the flange portion 22 of the sealing ring body 2 also has elastic deformation ability and can provide a certain elastic force, the elastic deformation is mainly used to form a crimping sealing connection, and the elastic force it can provide is relatively small. In particular, when there is a large accumulation of adhesion materials, the sealing deformation of the flange portion 22 itself is not enough to overcome the adhesion. For this reason, the present application scheme is provided with an elastic element 4 at least in the flange portion 22, and the elastic element 4 provides the upward elastic force of the flange portion 22, so that when the pressure on the semiconductor chip 6 is eliminated, the semiconductor chip 6 is pushed upward. In this embodiment, the elastic element 4 includes a transverse plate portion 41 located in the platform portion 21 and a protrusion 42 located in the flange portion 22. That is, the cross-section of the elastic element 4 is roughly L-shaped. In other embodiments, the cross-sectional shape of the elastic element 4 may also be other shapes, such as semicircular, square, cylindrical, etc. Further, the inner edge 202 is a plastic part, and the elastic element 4 is encapsulated and injection-molded in the inner edge 202. In this embodiment, the sealing ring body 2 is made of the same material and is a plastic part. The elastic element 4 may be arranged in an annular shape in the sealing ring body 2, or may be multiple sections or multiple sections arranged in an annular shape in the sealing ring body 2.

[0036] In some embodiments, the material of the elastic element 4 is one of perfluoropolymer, silicon sulfide or metal tungsten. In other embodiments, the elastic element 4 can also be made of other elastic lightweight materials. The rigidity of the elastic element 4 is greater than the rigidity of the flange portion 22. The rigidity of the elastic element 4 is greater than the rigidity of the flange portion 22, which can play the role of supporting the skeleton, ensuring that the flange portion 22 is deformed first to form a seal, and under the premise of ensuring that it forms a seal, when the pressure applied by the semiconductor wafer 6 to the flange portion 22 exceeds a preset threshold, an elastic force is provided to facilitate the separation of the semiconductor wafer 6. The rigidity of the elastic element 4 is greater than the rigidity of the flange portion 22, and can be formed by using different materials or different shapes. Further, in this embodiment, the elastic element 4 is annular, and its width in the radial direction is 1.5-2.55mm, and its thickness is 0.06-0.6mm.

[0037] See also Figure 4 As shown, in this embodiment, there is a distance D between the top of the protrusion 42 of the elastic element 4 and the top surface of the flange portion 22, and the flange portion 22 forms a sealing gasket layer 221 in the portion of the distance D. When the flange portion 22 is under pressure, the sealing gasket layer 221 elastically deforms before the elastic element 4. Preferably, the thickness of the sealing gasket layer 221, that is, the size of the distance D is not less than 0.05 mm.

[0038] See also Figure 5 As shown, it is another embodiment of the sealing ring. In this embodiment, the top of the raised portion 42 of the elastic element 4 is arranged non-parallel to the top surface of the flange portion 22. In this arrangement, when the sealing gasket layer 221 of the flange portion 22 is preferentially deformed to form a seal, and the flange portion 22 continues to be pressed by the semiconductor wafer 6 beyond a preset threshold, the elastic force provided by the elastic element 4 that is conducive to the separation of the semiconductor wafer 6 is not perpendicular to the semiconductor wafer 6, but inclined upward, so that the elastic element 4 will provide a sliding shear component to the semiconductor wafer 6, which is more conducive to cutting off the adhesive force of the adhesive, so that the semiconductor wafer 6 is easy to separate. In this embodiment, the top of the raised portion 42 of the elastic element 4 is an arc-shaped inclined surface; in other embodiments, it can also be an inclined plane or other types of surfaces.

[0039] See also Figure 6 and Figure 7As shown, it is another embodiment of the sealing ring. In this embodiment, a sealed chamber 401 is provided in the inner edge 202 of the sealing ring body 2, and the chamber 401 is filled with a fluid or semi-fluid medium 402, and the medium 402 can flow when under pressure and return to the state before being under pressure when not under pressure, and the medium 402 fills the chamber 401 to form the elastic element 4. In this embodiment, the cross-section of the chamber 401 is L-shaped, and a part of the chamber 401 is located in the flange portion 22, and a part of the chamber 401 is located in the platform portion 21. When the flange 22 is under pressure, the medium 402 filled in the chamber 401 is pressed to flow to the bottom of the flange 22, or even to the platform 21, so that the pressure at these positions increases, and the medium 402 has a tendency to return to the state before being pressed. When the pressure applied to the semiconductor wafer 6 is eliminated, the medium 402 returns to the state before being pressed, so that the flange 22 bounces upward to promote the separation of the semiconductor wafer 6. The medium 402 can be liquid, gas, gel, etc., which can achieve its own dynamic balance and reduce the problems of uneven force and sealing failure caused by aging and wear of the sealing ring. The chamber 401 can be directly formed by the sealing ring body 2, that is, the medium 402 is directly filled in the chamber 401 and contacts the sealing ring body 2; in some embodiments, the medium 402 can also be filled in an independent annular ring, and the annular ring filled with the medium 402 is the elastic element 4, which is then arranged in the sealing ring body 2 by injection molding or other methods.

[0040] Please refer again Figure 1 As shown, the present invention also provides an electroplating device, which includes a supporting module 10, a crimping module 20 and a sealing ring for the electroplating device as described above, wherein a placement groove for placing a semiconductor wafer 6 is formed between the crimping module 20 and the supporting module 10, and the sealing ring is fixed on the supporting module 10 and arranged around the circumference of the placement groove. During electroplating, the sealing ring is in sealing contact with the bottom edge of the semiconductor wafer 6.

[0041] Through the above description of the specific embodiments, it can be known that the sealing ring for electroplating equipment provided by the present invention includes a sealing ring body 2 and an elastic element 4, wherein the sealing ring body 2 has an outer edge 201 and an inner edge 202, wherein the outer edge 201 is used for fixing the sealing ring body 2, and the inner edge 202 is used for contacting and sealing with the semiconductor wafer 6; the elastic element 4 is arranged in the inner edge 202 of the sealing ring body 2; the inner edge 202 includes a platform portion 21 and a flange portion 22 protruding upward from the free end of the platform portion 21, and the elastic element 4 is at least arranged in the flange portion 22; when the pressure applied by the semiconductor wafer 6 to the flange portion 22 exceeds a preset threshold, the elastic element 4 provides an upward elastic force to the flange portion 22, so that when the pressure on the semiconductor wafer 6 is eliminated, the semiconductor wafer 6 is pushed upward, which helps to overcome the adhesion between the semiconductor wafer 6 and the sealing ring and facilitates the separation of the semiconductor wafer 6 from the sealing ring.

[0042] The present invention is described by several specific embodiments, and it should be understood by those skilled in the art that various changes and equivalent substitutions may be made to the present invention without departing from the scope of the present invention. In addition, various modifications may be made to the present invention for specific situations or specific circumstances without departing from the scope of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed, but should include all implementation methods falling within the scope of the claims of the present invention.

Claims

1. A sealing ring for electroplating equipment, which contacts and seals with a semiconductor wafer during electroplating of the semiconductor wafer to define an electroplating area and a peripheral area, characterized in that: The sealing ring comprises: a sealing ring body having an outer edge and an inner edge, wherein the outer edge is used for fixing the sealing ring body and the inner edge is used for contacting and sealing with the semiconductor wafer; and an elastic element, disposed in the inner edge of the sealing ring body; Wherein, the inner edge includes a platform portion and a flange portion protruding upward from a free end of the platform portion, and the elastic element is at least arranged in the flange portion; When the pressure exerted on the flange by the semiconductor wafer exceeds a preset threshold, the elastic element provides an upward elastic force on the flange, so that the semiconductor wafer is pushed upward when the pressure on the semiconductor wafer is eliminated.

2. The sealing ring for electroplating equipment according to claim 1, characterized in that: The elastic element has a stiffness greater than that of the flange portion.

3. The sealing ring for electroplating equipment according to claim 1, characterized in that: The elastic element includes a transverse plate portion located in the platform portion and a protruding portion located in the flange portion.

4. The sealing ring for electroplating equipment according to claim 1 or 3, characterized in that: The inner edge is a plastic part, and the elastic element is injection-molded inside the inner edge.

5. The sealing ring for electroplating equipment according to claim 4, characterized in that: The elastic element is made of perfluoropolymer, silicon sulfide or metal tungsten.

6. The sealing ring for electroplating equipment according to claim 5, characterized in that: The elastic element has a radial width of 1.5-2.55 mm and a thickness of 0.06-0.6 mm.

7. The sealing ring for electroplating equipment according to claim 3, characterized in that: The top end of the raised portion of the elastic element has a distance between the inside of the flange portion and the top surface of the flange portion, and the flange portion forms a sealing gasket layer at the distance portion. When the flange portion is under pressure, the sealing gasket layer elastically deforms before the elastic element.

8. The sealing ring for electroplating equipment according to claim 3, characterized in that: The top end of the raised portion of the elastic element is arranged non-parallel to the top surface of the flange portion.

9. The sealing ring for electroplating equipment according to claim 1, characterized in that: A sealed chamber is arranged inside the inner edge of the sealing ring body, and the chamber is filled with a fluid or semi-fluid medium. The medium can flow when under pressure and return to the state before being under pressure when not under pressure. The medium fills the chamber to form the elastic element.

10. An electroplating device, characterized in that: It includes a supporting module, a crimping module and a sealing ring for electroplating equipment as described in any one of claims 1 to 9, a placement groove for placing the semiconductor wafer is formed between the crimping module and the supporting module, and the sealing ring is fixed on the supporting module and arranged around the circumference of the placement groove.

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