Manufacturing method of substrate structure and substrate structure

Abstract

The invention discloses a manufacturing method of a substrate structure and the substrate structure, relates to the technical field of packaging substrates, and aims to solve the problem that the quality of a packaging substrate finally formed in the prior art is limited by the thickness of a core plate. The manufacturing method of the substrate structure comprises the following steps: providing a substrate with a first surface and a second surface which are opposite to each other; a through hole penetrating through the substrate is formed in the direction from the first surface to the second surface; forming a first inner metal circuit layer located on the surface of the substrate, an orifice bonding pad covering the through hole and provided with a first hole, and a first conductive metal layer located in the through hole and provided with a second hole on the surface of the substrate and the hole wall of the through hole; forming a plug hole material on the substrate and the first conductive metal layer; removing part of the hole plugging material by adopting a chemical mechanical polishing mode so as to retain the hole plugging material on the substrate, in the first hole and in the second hole; and the surface of the retained hole plugging material is flush with the surface of the first inner metal circuit layer and the surface of the orifice bonding pad.

Description

Technical Field

[0001] The present invention relates to the technical field of packaging substrates, and in particular to a manufacturing method of a substrate structure and a substrate structure. Background Art

[0002] The packaging substrate is an important material for device packaging. In advanced packaging, the cost of the substrate is much higher than that of conventional packaging. In high-speed signal transmission, due to the high requirements for the quality of signal transmission, it is necessary to minimize the right-angle bends in the signal transmission line and the corners in the line. For multi-layer interconnect packaging substrates, high-speed signal transmission requires the core board through holes and interlayer blind holes of the packaging substrate to be stacked vertically. In the actual production process, it is necessary to metallize the core board through holes and then fill them with resin. After the core board through holes are filled and the resin is cured, the resin on both sides of the core board through holes are removed by a grinding machine to expose the resin in the core board through holes, and then the surface is metallized and patterned to form the circuit on the core board.

[0003] Specifically, the brushing machine horizontally transmits the core plate by using multiple sets of symmetrical rollers for transmission and brushing. The movement of the core plate is driven by the rollers, and the brushing is also done by the rotating rollers. During the brushing process, the rollers exert a great force on the core plate to flatten the core plate, and other rollers can effectively brush.

[0004] However, in order to ensure that the core board is not damaged during the resin brushing process, the core board needs to be very thick. For example, conventional substrate resin plugging and brushing requires the core board to be more than 0.2mm thick. Core boards with a thickness of less than 0.2mm will tear during the brushing process, which will result in the quality of the final package substrate being limited by the thickness of the core board. Summary of the invention

[0005] The object of the present invention is to provide a method for manufacturing a substrate structure and a substrate structure, which are applicable to substrates of different thicknesses and improve the application range and quality of the substrate structure.

[0006] In order to achieve the above-mentioned object, in a first aspect, the present invention provides a method for manufacturing a substrate structure. The method for manufacturing a substrate structure comprises:

[0007] First, a substrate is provided; the surface of the substrate has a first surface and a second surface opposite to each other;

[0008] Next, a through hole is opened along the direction from the first surface to the second surface, penetrating the substrate;

[0009] Next, a first conductive metal layer is formed on the surface of the substrate and the hole wall of the through hole; the first conductive metal layer includes a first inner metal circuit layer located on the surface of the substrate, a hole pad covering the through hole, and a first conductive metal layer located in the through hole; the hole pad has a first pore, and the first conductive metal layer located in the through hole has a second pore; the first pore is connected to the second pore along the direction from the first surface to the second surface; the second pore and the first pore penetrate the substrate along the direction from the first surface to the second surface;

[0010] Next, forming a plugging material on the substrate and the first conductive metal layer;

[0011] Next, chemical mechanical polishing is used to remove part of the plugging material to retain the plugging material on the substrate, in the first pore and in the second pore; the surface of the retained plugging material away from the substrate is flush with the surface of the first inner metal circuit layer away from the substrate and the surface of the orifice pad away from the substrate.

[0012] Compared with the prior art method of removing by grinding with a brush, in the manufacturing method of the substrate structure provided by the present invention, since the plugging material is removed by chemical mechanical polishing, the force applied by the chemical mechanical polishing equipment to the substrate is very small, so the probability of damage to the substrate can be reduced or eliminated, so as to improve the quality of the substrate structure. Based on this, the manufacturing method of the substrate structure provided by the present invention has no requirements on the thickness of the substrate, and a substrate of any thickness that meets actual needs can be used to manufacture the substrate structure. The thickness of the substrate is no longer limited by the method of removing the plugging material, thereby improving the application range and quality of the substrate structure. Furthermore, since the surface of the retained plugging material away from the substrate is flush with the surface of the first inner metal circuit layer away from the substrate and the surface of the orifice pad away from the substrate, the surface of the retained plugging material, the surface of the first inner metal circuit layer and the surface of the orifice pad form a flat plane, which provides a good foundation for the formation of subsequent structures, is conducive to improving the quality of subsequent structures, and also makes the process of the substrate structure simple and easy to manufacture.

[0013] In a second aspect, the present invention further provides a substrate structure, which is manufactured by the manufacturing method of the substrate structure described in the above technical solution. The substrate structure comprises: a substrate, a first conductive metal layer and a plugging material. The surface of the substrate has a first surface and a second surface opposite to each other, and the substrate has a through hole that penetrates the substrate in the direction from the first surface to the second surface. The first conductive metal layer is formed on the surface of the substrate and the hole wall of the through hole, and the first conductive metal layer comprises a first inner metal circuit layer located on the surface of the substrate, an orifice pad covering the through hole, and a first conductive metal layer located in the through hole. The orifice pad has a first pore, the first conductive metal layer located in the through hole has a second pore, and the first pore is connected with the second pore in the direction from the first surface to the second surface. The second pore and the first pore penetrate the substrate in the direction from the first surface to the second surface. The plugging material is formed on the substrate, in the first pore and in the second pore, and the surface of the plugging material away from the substrate, the surface of the first inner metal circuit layer away from the substrate, and the surface of the orifice pad away from the substrate are all flush.

[0014] Compared with the prior art, the beneficial effects of the substrate structure provided by the present invention are the same as the beneficial effects of the method for manufacturing the substrate structure described in the above technical solution, and are not described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0016] Figure 1 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 1 ;

[0017] Figure 2 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 2 ;

[0018] Figure 3 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 3 ;

[0019] Figure 4 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 4 ;

[0020] Figure 5 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 5 ;

[0021] Figure 6 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 6 ;

[0022] Figure 7 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 7 ;

[0023] Figure 8 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 8 ;

[0024] Fig. 9 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 9 ;

[0025] Fig.10 A cross-sectional view of a packaging substrate during the manufacturing process in the prior art Figure 10 ;

[0026] Fig.11 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 one;

[0027] Fig.12 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 two;

[0028] Fig.13 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 three;

[0029] Fig.14 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 Four;

[0030] Fig.15 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 five;

[0031] Fig.16 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 six;

[0032] Fig.17 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 1 ;

[0033] Fig.18 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 ;

[0034] Fig.19 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 3 ;

[0035] Fig. 20 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 4 ;

[0036] Fig.21 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 5 ;

[0037] Fig. 22 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 6 ;

[0038] Fig.23 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 7 ;

[0039] Fig.24 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 8 ;

[0040] Fig.25 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 9 ;

[0041] Fig.26 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 ;

[0042] Fig. 27 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 one;

[0043] Fig.28 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 two;

[0044] Fig.29 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 three;

[0045] Fig.30 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 Four;

[0046] Fig.31 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 five;

[0047] Fig.32 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 six;

[0048] Fig.33 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 seven;

[0049] Fig.34 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 eight;

[0050] Fig.35 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 Nine;

[0051] Fig.36 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 ten;

[0052] Fig.37 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 eleven;

[0053] Fig.38 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 twelve;

[0054] Fig.39 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 Thirteen;

[0055] Fig.40 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 fourteen;

[0056] Fig.41 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 fifteen;

[0057] Fig.42 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 sixteen;

[0058] Fig.43 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 XVII;

[0059] Fig.44 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 eighteen;

[0060] Fig.45 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 nineteen.

[0061] Fig.46 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 3 ten;

[0062] Fig.47A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 3 eleven;

[0063] Fig.48 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 3 twelve.

[0064] Reference numerals:

[0065] 1-substrate, 10-core board, 11-copper board, 12-through hole, 13-pore; 20-copper layer, 21-first electroplated copper layer, 22-hole plugging material, 23-chemical copper plating layer, 24-second electroplated copper layer, 25-graphic mask layer, 26-inner metal circuit layer, 27-insulating layer, 28-blind hole, 29-outer metal circuit layer, 30-solder mask layer, 31-solder ball; 4-first conductive metal layer, 40-seed layer, 41-conductive layer, 42-first inner metal circuit layer, 43-hole pad, 44-first pore, 45-second pore, 5-third graphic mask, 6-second conductive metal layer, 7-first graphic mask, 8-third conductive metal layer, 90-first pad, 91-first insulating layer, 910-insulating material, 92-second inner metal circuit layer, 93-second pad, 94-fourth conductive metal layer, 95-fifth conductive metal layer, 96-second graphic mask, 97-second insulating layer, 98-sixth conductive metal layer, 99-fourth graphic mask, 100-seventh conductive metal layer. DETAILED DESCRIPTION

[0066] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0067] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0068] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. The meaning of "several" is one or more, unless otherwise clearly and specifically defined.

[0069] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by the terms "up", "down", "front", "back", "left", "right", etc. are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.

[0070] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0071] In conjunction with the background technology, see Figures 1 to 16 , describes in detail the manufacturing process of the packaging substrate in the prior art:

[0072] Step 1: See Figure 1 and Figure 2 A through hole 12 is provided along the height direction of the substrate 1 and passes through the substrate 1. The substrate 1 comprises a core board 10 and a copper board 11 covering the first and second surfaces of the core board 10. The thickness of the substrate 1 is greater than 0.2 mm, and the thickness of the copper board 11 on each surface is greater than or equal to 5 μm.

[0073] Step 2: See Figure 3 , chemical copper plating is first performed on the surface of the substrate 1 and on the wall of the through hole 12 to form a copper layer 20, the thickness of which is generally greater than or equal to 0.3 microns and less than or equal to 1 micron. Then, a first electroplated copper layer 21 is formed on the surface of the copper layer 20, and the thickness of the first electroplated copper layer 21 is greater than or equal to 15 microns. The first electroplated copper layer 21 located in the through hole 12 has a pore 13, and the pore 13 penetrates the substrate 1 along the height direction of the substrate 1.

[0074] Step 3: See Figure 4 A plugging material 22 is formed on the first electroplated copper layer 21 and in the pores 13 .

[0075] Exemplarily, the plugging material 22 is generally a liquid resin. The liquid resin is filled into the pores 13 using a vacuum plugging machine or a screen printer, and then the liquid resin is cured to fix the resin in the pores 13 .

[0076] Step 4: See Figure 5 , the plugging material 22 located on both sides of the first electroplated copper layer 21 is removed by grinding.

[0077] In the prior art, a brushing machine is generally used to brush away the plugging material on both sides of the first electroplated copper layer. Specifically, the brushing machine includes two layers of evenly distributed brush rollers, and the brush rollers themselves are also grinding wheels. The structure to be brushed (i.e., the structure formed in step three) is placed between the two layers of brush rollers. The brush rollers rotate to push the structure to be brushed forward, and the middle brush roller rotates to brush the surface of the structure to be brushed. The front and rear brush rollers need to apply great pressure and tension to the structure to be brushed to drive the structure to be brushed forward. During the forward movement of the structure to be brushed, the brush rollers brush the surface of the structure to be brushed to remove the resin (i.e., the plugging material) located on the surface of the first electroplated copper layer. After the resin located on the surface of the first electroplated copper layer is brushed away, in order to ensure that the resin is brushed cleanly, a portion of the first electroplated copper layer on the surface of the substrate needs to be brushed away. Because the front and rear two brush rollers will exert a great tension on the substrate, the substrate must be flattened to effectively brush the resin, so the substrate thickness must be greater than 0.2 mm, otherwise the substrate will be torn by the brush rollers. When the substrate thickness is greater than 0.2 mm, but the thickness of the first electroplated copper layer located on the surface of the substrate is less than 15 microns, the tension of the front and rear two brush rollers will tear the first electroplated copper layer located on the surface of the substrate. Alternatively, the sum of the thickness of the copper plate on the surface of the core board and the first electroplated copper layer located on the surface of the substrate cannot be less than 12 microns. If it is less than 12 microns, the tension of the front and rear two brush rollers will tear the first electroplated copper layer located on the surface of the substrate. It should be understood that the brush machine, as a brushing equipment, is a large-scale equipment in the substrate processing process, which will occupy a large area and also have many environmental protection treatment requirements. Furthermore, the above-mentioned first electroplated copper layer must be complete and can have holes, but cannot have graphics (that is, there can be no circuits on the first electroplated copper layer).

[0078] Step 5: See Figure 6 A chemical copper plating layer 23 is formed on the surface of the first electroplated copper layer 21 and on the surface of the plugging material 22, and the thickness of the chemical copper plating layer 23 is greater than or equal to 1 micron.

[0079] Step 6: See Figure 7 A second electroplated copper layer 24 is formed on the surface of the chemically plated copper layer 23. The thickness of the second electroplated copper layer 24 is greater than or equal to 10 microns to ensure that it can withstand the laser drilling process in the subsequent laser drilling process to form blind holes, and at the same time ensure that it can withstand the stress formed by the thermal expansion of the plugging material in various high temperature environments.

[0080] Step 7: See Figure 8 A pattern mask layer 25 is formed on the second electroplated copper layer 24 by photolithography, and the pattern mask layer 25 at least covers the second electroplated copper layer 24 corresponding to the through hole 12 .

[0081] Step 8: See Fig. 9 and Fig.10 , the structure exposed outside the pattern mask layer 25 and located on the surface of the core board 10 is removed to form the hole pad and the inner metal circuit layer 26. The inner metal circuit layer 26 includes the copper plate 11, the copper layer 20, the first electroplated copper layer 21, the chemically plated copper layer 23 and the second electroplated copper layer 24.

[0082] Step 9: See Fig.10 , remove the pattern mask layer 25.

[0083] Step 10: See Fig.11 , an insulating layer 27 is laminated on the surface of the core board 10, the hole pad and the inner metal circuit layer.

[0084] Step 11: See Fig.12 A blind hole 28 is opened on the insulating layer 27 by laser drilling, and the blind hole 28 is connected to the second electroplated copper layer 24 corresponding to the through hole 12.

[0085] Step 12: See Fig.13 , a first outer metal circuit layer 29 is formed on the insulating layer 27 and in the blind hole 28.

[0086] Step 13: See Fig.14 , laser drilling and outer layer circuit processing are repeated on the first outer metal circuit layer 29 to form a multi-layer vertical stacked outer metal circuit layer 29. The vertically stacked blind vias 28 above the through holes 12 allow the signal to be directly transmitted from the core board 10 to the surface pad of the substrate 1 through the stacked blind vias 28, with the shortest path, minimum transmission loss and minimum radiation loss.

[0087] Step 14: See Fig.15 A solder resist layer 30 is formed on the outermost outer metal circuit layer, and the solder resist layer 30 exposes a portion of the outermost outer metal circuit layer 29.

[0088] Step 15: See Fig.16 , a solder ball 31 is formed on a portion of the outer metal circuit layer exposed by the solder resist layer 30 .

[0089] In summary, since the thickness of the copper plate on the surface of the core board is greater than or equal to 5 microns (generally 10 microns in the prior art), the thickness of the first electroplated copper layer formed on the surface of the copper layer in step 2 is greater than or equal to 15 microns, and the thickness of the copper layer 20 is generally greater than or equal to 0.3 microns and less than or equal to 1 micron. At this time, there is at least a 15-micron thick copper layer on the surface of the core board for front and back circuit conduction. The thickness of the second electroplated copper layer formed on the surface of the chemically plated copper layer in step 6 is greater than or equal to 10 microns. No matter how it is optimized, the thickness of the metal layer on the surface of the core board is not less than 25 microns. With such a thick metal layer, when the circuit is manufactured by etching (i.e., manufactured by subtractive method), the line width and line spacing will usually exceed 70 microns (for example, the line width and line spacing is greater than 75 microns), and it is impossible to manufacture fine circuits with a line width of less than 50 microns.

[0090] In order to solve the above technical problems, in the first aspect, the present invention provides a method for manufacturing a substrate structure. Figures 17 to 48 , the manufacturing method of the substrate structure includes:

[0091] First, see Fig.17 , a substrate 1 is provided; the surface of the substrate 1 has a first surface and a second surface opposite to each other; it should be noted that the surface of the substrate 1 also includes a side surface.

[0092] Exemplarily, the above-mentioned substrate 1 can be a core board 10 commonly used in the prior art, or the substrate 1 includes a core board 10 and a copper plate 11 covering the first and second surfaces of the core board 10. As for the thickness of the substrate 1, it is not specifically limited here and can be selected according to actual needs. The material of the core board can be an organic core board composed of glass fiber cloth and resin, or it can be a glass core board with through holes. It should be noted that if the core board is a glass core board with through holes, the core board or the substrate is processed to open through holes in subsequent steps depending on the situation. In an embodiment of the present invention, the substrate 1 including the core board 10 and the copper plate 11 covering the first and second surfaces of the core board 10 is described as an example.

[0093] Next, see Fig.18 , a through hole 12 penetrating the substrate 1 is provided along the direction from the first surface to the second surface;

[0094] For example, the number of the through holes can be set according to actual needs, for example, 1, 2 or more. When the number of through holes is multiple, the multiple through holes are spaced apart along the length direction of the substrate. As for the aperture, shape, etc. of the through hole, they can be set according to actual needs and are not specifically limited here.

[0095] As a possible implementation method, a debonding process is performed to remove mechanical damage and residual glue in the through hole. Fig.19 , remove the copper plates 11 on the first and second surfaces of the core board 10. For example, the copper plates 11 are removed by using an etching solution.

[0096] Next, see Figure 20 to Figure 23 , forming a first conductive metal layer 4 on the surface of the substrate 1 and the hole wall of the through hole 12;

[0097] As a possible implementation manner, forming the first conductive metal layer on the surface of the substrate and the hole wall of the through hole specifically includes:

[0098] First, see Fig. 20 , a seed layer 40 is formed on the surface of the substrate 1 and the wall of the through hole 12, and the thickness of the seed layer 40 is greater than or equal to 0.3 microns and less than or equal to 1 micron. For example, the thickness of the seed layer 40 can be 0.3 microns, 0.4 microns, 0.5 microns, 0.6 microns, 0.7 microns, 0.8 microns, 0.9 microns or 1 micron, etc. Since the thickness of the seed layer 40 is relatively thin, a circuit with a line width of less than 20 microns can be manufactured on the surface of the substrate 1. For example, a circuit with a line width and line spacing of 10 microns can be manufactured on the surface of the substrate 1. Furthermore, the first inner metal circuit layer is manufactured by the additive method, and at this time, a fine circuit with a line width and line spacing of less than 20 microns can be manufactured.

[0099] Exemplarily, chemical copper deposition is performed on the surface of the substrate and the wall of the through hole. It should be noted that the material of the seed layer is not limited to copper, but may also be other materials that meet actual requirements.

[0100] Next, see Fig.21 , forming a third pattern mask 5 on the seed layer 40 located on the surface of the substrate 1;

[0101] Exemplarily, a mask layer is formed on the entire surface of the seed layer 40 on the surface of the substrate 1, and then the mask layer is subjected to photolithography patterning to form the third graphic mask 5. It should be noted that the distribution position, size, etc. of the third graphic mask 5 are set according to actual needs and are not specifically limited here.

[0102] Next, see Fig. 22 , forming a conductive layer 41 on the region of the seed layer 40 exposed outside the third pattern mask 5;

[0103] Exemplarily, the material of the conductive layer may be copper. It should be noted that the material of the conductive layer is not limited to copper, but may be other materials that meet practical requirements. Furthermore, the "region of the seed layer exposed outside the third graphic mask" includes the region located on the surface of the substrate and the region located in the through hole.

[0104] Next, see Fig.23 and Fig.24 , removing the third pattern mask 5 and the seed layer 40 exposed outside the conductive layer 41;

[0105] Exemplarily, the third pattern mask 5 is stripped off, and the seed layer 40 exposed outside the conductive layer is removed by rapid etching. The conductive layer 41 and the seed layer 40 corresponding to the conductive layer 41 form the first conductive metal layer 4.

[0106] See also Fig.24 According to the different positions of the first conductive metal layer 4, the first conductive metal layer 4 includes a first inner metal circuit layer 42 located on the surface of the substrate 1, an orifice pad 43 covering the through hole 12, and a first conductive metal layer 4 located in the through hole 12; the orifice pad 43 has a first pore 44, and the first conductive metal layer 4 located in the through hole 12 has a second pore 45. The first pore 44 is connected to the second pore 45 in the direction from the first surface to the second surface, and the second pore 45 and the first pore 44 penetrate the substrate 1 in the direction from the first surface to the second surface. In the embodiment of the present invention, the first pore 44 and the second pore 45 have the same size.

[0107] Next, forming a plugging material on the substrate and the first conductive metal layer;

[0108] The plugging material must have the characteristic of low thermal expansion coefficient, so solder mask green oil with low thermal expansion coefficient can be used as the plugging material. In the embodiment of the present invention, the plugging material is a dry film type plugging resin material, such as ABF resin, RCC resin, or ABF-like resin. ABF is an interlayer insulating resin material for substrates developed by Ajinomoto Co., Ltd. of Japan, and ABF-like is an interlayer insulating resin developed by other material suppliers with the same function as ABF. RCC is a semi-cured resin sheet with copper foil.

[0109] Exemplarily, when the plugging material is a dry film type plugging resin material, the dry film type plugging resin material is formed on the substrate and the first conductive metal layer by vacuum pressing.

[0110] For details, see Fig.25 , the dry film type plugging resin material is filled into the first pore 44 and the second pore 45 by vacuum pressing, and is formed on the substrate 1 and on the first conductive metal layer 4 located on the surface of the substrate 1. Compared with the prior art that uses a vacuum plugging machine or a screen printer to fill the liquid resin into the first pore 44 and the second pore 45, the method used in the embodiment of the present invention can ensure that the thickness of the plugging material 22 finally formed is uniform and consistent, and reduce or avoid the occurrence of voids. Furthermore, the vacuum pressing method can remove bubbles in the first pore 44, the second pore 45, the surface of the first pore 44 and the surface of the second pore 45. In addition, the vacuum pressing method also greatly improves the surface flatness of the substrate after plugging.

[0111] Next, see Fig.26, chemical mechanical polishing is used to remove part of the plugging material 22, so as to retain the plugging material 22 located on the substrate 1, in the first pore 44 and in the second pore 45. The surface of the retained plugging material 22 away from the substrate 1 is flush with the surface of the first inner metal circuit layer 42 away from the substrate 1 and the surface of the orifice pad 43 away from the substrate 1. It should be noted that Fig.26 The height of the orifice pad can be equal to or less than Fig.25 The height of the orifice pad is not described in detail here.

[0112] In an optional manner, chemical mechanical polishing is used to remove part of the plugging material to retain the plugging material located on the substrate, in the first pore and in the second pore, including: when the dry film type plugging resin material is cured to an incompletely cured state, chemical mechanical polishing is used to remove part of the dry film type plugging resin material to retain the dry film type plugging resin material located on the substrate, in the first pore and in the second pore; wherein the incompletely cured state is 60% to 80% of the dry film type plugging resin material is cured.

[0113] Exemplarily, when the plugging material is a dry film plugging resin material, in the process of forming the dry film plugging resin material on the substrate and the first conductive metal layer by vacuum pressing, low temperature baking is selected to low temperature cure the dry film plugging resin material to an incompletely cured state, at which time the dry film plugging resin material has a certain rigidity and strength, and has a good bonding force with the substrate and the first conductive metal layer, and the dry film plugging resin material itself is slightly soft at this time, and the removal speed is fast when chemical mechanical polishing is used, which can improve the processing efficiency. That is, when the dry film plugging resin material is cured to an incompletely cured state, the above structure is fixed on a vacuum platform, and chemical mechanical polishing is used to brush with a highly flat rotating grinding head to remove part of the dry film plugging resin material, so as to retain the plugging material located on the substrate, in the first pore and in the second pore; wherein the incompletely cured state is 60% to 80% of the dry film plugging resin material is cured.

[0114] After removing part of the dry film type plugging resin material by chemical mechanical polishing, the retained plugging material is completely cured.

[0115] As a possible implementation method, the chemical mechanical polishing (CMP) is single-sided polishing. That is, after the plugging material on one side is removed to expose the first inner metal circuit layer and the hole pad, the plugging material on the other side is removed to expose the first inner metal circuit layer and the hole pad on the other side. Furthermore, by adopting the single-sided removal method, during the process of removing the plugging material on one side, the other side is not removed, and the other side that is not removed can be protected to prevent the substrate from being subjected to excessive force, thereby avoiding damage to the substrate.

[0116] Specifically, on a square substrate vacuum adsorption or temporary bonding polishing head, a CMP polishing head is used to remove the plugging material (such as plugging resin) located on one side of the substrate. Since the CMP equipment adopts chemical mechanical polishing, the polishing head removes the plugging material located on the surface of the substrate with high precision, and the force applied by the polishing head to the surface of the substrate is very small, and will not damage the substrate or the thin layer of metal (such as the first conductive metal layer) on the surface of the substrate. After the plugging material on the polished surface of the substrate is completely removed to expose the first conductive metal layer on the surface of the substrate, the substrate is reversed to remove the plugging material on the other side of the substrate. Specifically, on a vacuum polishing table, the plugging material on the other side of the substrate is removed by CMP using a polishing head. The plugging material on the surface of the substrate is removed by chemical mechanical polishing to expose the first conductive metal layer on the surface of the substrate, thereby completing the removal of the plugging material on both sides of the substrate.

[0117] Compared with the prior art method of removing the plugging material by grinding with a brush, in the manufacturing method of the substrate structure provided by the embodiment of the present invention, since the plugging material is removed by chemical mechanical polishing, the force applied by the chemical mechanical polishing equipment to the substrate is very small (for example, there is no strong clamping and pulling of the upper and lower rollers), so the probability of damage to the substrate can be reduced or eliminated, so as to improve the quality of the substrate structure, and at the same time, the fine circuit structure formed on the substrate can be protected. Based on this, the manufacturing method of the substrate structure provided by the embodiment of the present invention has no requirements on the thickness of the substrate, and any substrate of any thickness that meets the actual needs can be used to manufacture the substrate structure. The thickness of the substrate is no longer limited by the method of removing the plugging material, thereby improving the application range and quality of the substrate structure. Furthermore, since the surface of the retained plugging material away from the substrate is flush with the surface of the first inner metal circuit layer away from the substrate and the surface of the orifice pad away from the substrate, the surface of the retained plugging material, the surface of the first inner metal circuit layer and the surface of the orifice pad form a flat plane, which provides a good foundation for the formation of subsequent structures and is conducive to improving the quality of subsequent structures.

[0118] Furthermore, the method for removing the plugging material provided in the embodiment of the present invention (i.e., the chemical mechanical polishing method) can be used not only for 510mm×515mm substrates, but also for 12-inch substrates. It can be seen that the above method for removing the plugging material can be used for the production of large-format substrate structures, and has very outstanding technical advantages and good technical effects for realizing vertical stacking wiring of the plugging material of the large-format substrate structure. Furthermore, the other descriptions in the foregoing and combined with the above method for removing the plugging material, in the embodiment of the present invention, can not only realize the protection of the substrate and the no requirement for the thickness of the substrate, but also realize the line processing and vertical stacking of fine lines and wide line spacing. At this time, it is beneficial to improve the wiring density of the substrate structure, reduce the number of wiring layers, and reduce costs.

[0119] In addition, since the surface of the plugging material formed by the vacuum plugging machine or the screen printing machine is uneven, it can only be polished by a brushing machine, which does not meet the requirements of chemical mechanical polishing. However, in the embodiment of the present invention, since the dry film type plugging resin material is filled into the pores and formed on the first conductive metal layer by vacuum pressing, the surface flatness of the plugging resin is very high, which meets the requirements of removing the plugging resin by chemical mechanical polishing.

[0120] As a possible implementation manner, after removing part of the plugging material by chemical mechanical polishing to retain the plugging material located on the substrate and in the first pore and the second pore, the method for manufacturing the substrate structure further includes:

[0121] First, see Figures 27 to 31 , forming a first pad 90 on the orifice pad 43;

[0122] As a possible implementation manner, forming the first pad on the aperture pad specifically includes:

[0123] See also Fig. 27 , forming a second conductive metal layer 6 on the surface of the plugging material 22, the surface of the first inner metal circuit layer 42 and the surface of the hole pad 43;

[0124] Exemplarily, copper is electrolessly plated on the surface of the plugging material 22, the surface of the first inner metal circuit layer 42 and the surface of the hole pad 43 to form the second conductive metal layer 6. It should be noted that the material of the second conductive metal layer 6 is not limited to copper, but can also be other materials that meet actual requirements.

[0125] Next, see Fig.28 , forming a first pattern mask 7 on the surface of the second conductive metal layer 6, wherein the first pattern mask 7 exposes the second conductive metal layer 6 covering the first pores 44;

[0126] Exemplarily, a mask layer is formed on the entire surface of the second conductive metal layer 6, and then the mask layer is subjected to photolithography patterning to form a first pattern mask 7. The width of the second conductive metal layer 6 exposed by the first pattern mask 7 can be set according to actual needs, for example, the width of the second conductive metal layer 6 exposed by the first pattern mask 7 is equal to the aperture of the first pore 44, or the width of the second conductive metal layer 6 exposed by the first pattern mask 7 is greater than the aperture of the first pore 44 and less than or equal to the width of the orifice pad 43.

[0127] Next, see Fig.29 , forming a third conductive metal layer 8 on the area of ​​the second conductive metal layer 6 exposed outside the first pattern mask 7;

[0128] Exemplarily, the material of the third conductive metal layer may be copper, and the thickness of the third conductive metal layer is greater than 10 microns. Preferably, the thickness of the third conductive metal layer is 15 microns.

[0129] Next, see Fig.30 and Fig.31 , remove the first pattern mask 7 and the second conductive metal layer 6 exposed outside the third conductive metal layer 8.

[0130] Exemplarily, the first pattern mask 7 is stripped, and the second conductive metal layer 6 exposed outside the third conductive metal layer 8 is removed by rapid etching. The third conductive metal layer 8 and the second conductive metal layer 6 corresponding to the third conductive metal layer 8 form a first pad 90.

[0131] Next, see Fig.32 and Fig.33 A first insulating layer 91 is formed on the plugging material 22 located on the surface of the substrate 1 and on the first inner metal circuit layer 42 , and the first insulating layer 91 is located on one side of the first pad 90 .

[0132] Exemplarily, an insulating material 910 is laminated on the plugging material 22 located on the surface of the substrate 1, on the first inner metal circuit layer 42, and on the hole pad 43. Then, the insulating material 910 above the plugging material 22 located on the surface of the substrate 1 and the first inner metal circuit layer 42 is removed by chemical mechanical polishing, and only the insulating material 910 on the plugging material 22 located on the surface of the substrate 1 and the first inner metal circuit layer 42 is retained as the first insulating layer 91. At this time, the first insulating layer 91 exposes the first pad 90. The material of the first insulating layer 91 may be the same as that of the plugging material 22, or may be different. Preferably, the material of the first insulating layer 91 may be the same as that of the plugging material 22, in which case the dielectric constant may be prevented from changing, which is beneficial to signal transmission.

[0133] As a possible implementation, see Fig.33 , the surface of the first insulating layer 91 away from the substrate 1 is flush with the surface of the first pad 90 away from the substrate 1. At this time, the surface of the first insulating layer 91 and the surface of the first pad 90 form a flat plane, which provides a good foundation for the formation of subsequent structures, is conducive to improving the quality of subsequent structures, avoids blind hole plating, and the process is simple and easy to control.

[0134] Next, forming a second inner metal circuit layer on the first insulating layer;

[0135] Next, a second pad is formed on the first pad.

[0136] Forming a second inner metal circuit layer on the first insulating layer and forming a second pad on the first pad specifically includes:

[0137] See also Fig.34 , forming a fourth conductive metal layer 94 on the first insulating layer 91 and the first pad 90;

[0138] Exemplarily, a whole fourth conductive metal layer 94 is formed on the first insulating layer 91 and the first pad 90. The fourth conductive metal layer 94 may be made of copper, or other materials that meet practical requirements.

[0139] Next, see Fig.35 , forming a second pattern mask 96 on the surface of the fourth conductive metal layer 94, the second pattern mask 96 exposing a portion of the fourth conductive metal layer 94 located above the first pad 90 and a portion of the fourth conductive metal layer 94 located on the first insulating layer 91;

[0140] Exemplarily, a mask layer is formed entirely on the surface of the fourth conductive metal layer, and then the mask layer is subjected to photolithography patterning to form a second pattern mask.

[0141] Next, see Fig.36 A fifth conductive metal layer 95 is formed on the area of ​​the fourth conductive metal layer 94 exposed outside the second pattern mask 96; the material of the fifth conductive metal layer 95 can be copper, and of course can also be other materials that meet actual requirements.

[0142] Next, see Fig.37 and Fig.38 , removing the second pattern mask 96 and the fourth conductive metal layer 94 exposed outside the fifth conductive metal layer 95;

[0143] Exemplarily, the second pattern mask 96 is stripped, and the fourth conductive metal layer 94 exposed outside the fifth conductive metal layer 95 is removed by rapid etching. The fifth conductive metal layer 95 located above the first insulating layer 91 and the fourth conductive metal layer 94 corresponding to the fifth conductive metal layer 95 form a second inner metal circuit, and the fifth conductive metal layer 95 located above the first pad 90 and the fourth conductive metal layer 94 corresponding to the fifth conductive metal layer 95 form a second pad 93.

[0144] In an alternative approach, see Fig.38 , along the direction from the first surface to the second surface, the thickness of the second inner metal circuit layer 92 is equal to the height of the second pad 93. At this time, the surface of the second inner metal circuit layer is flush with the surface of the second pad 93, which provides a good foundation for the formation of subsequent structures, is conducive to improving the quality of subsequent structures, avoids blind hole plating, and the process is simple and easy to control.

[0145] As a possible implementation, see Fig.38 The width of the orifice pad 43 is greater than the width of the first pad 90, the width of the first pad 90 is greater than the width of the second pad 93, the width direction of the orifice pad 43, the width direction of the first pad 90 and the width direction of the second pad 93 are all consistent and perpendicular to the direction from the first surface to the second surface. The interconnection between the first inner metal circuit layer 42 and the second inner metal circuit layer 92 is achieved through the first pad 90.

[0146] After forming the second pad on the first pad, the method for manufacturing the substrate structure further includes:

[0147] See also Fig.38 and Fig.39 , a second insulating layer 97 is formed on the second inner metal circuit layer 92 and the second pad 93; illustratively, the second insulating layer is manufactured by vacuum lamination.

[0148] Next, see Fig.40 A blind hole 28 is provided on the second insulating layer 97, and the blind hole 28 is connected to the second pad 93; the blind hole 28 is used to form a vertical electrical connection between the second inner metal circuit layer 92 and the outer metal circuit layer. In the embodiment of the present invention, along the direction from the first surface to the second surface of the substrate 1, as long as the blind hole 28 is completely located on the second pad 93, it will be sufficient. Based on this, the second pad 93 only needs to be larger than the maximum size of the blind hole 28.

[0149] For example, a blind hole can be opened on the second insulating layer by laser drilling. Since the laser drilling process will produce slag, such as slag produced by melting back resin and laser processing glass fiber and copper foil, the substrate can be placed in a slag removal tank to remove the slag in the blind hole.

[0150] Next, see Figure 41 to Figure 45 , forming at least one outer metal circuit layer 29 on the second insulating layer 97 and in the blind hole 28;

[0151] For example, see Fig.41 First, a sixth conductive metal layer 98 (for example, a copper conductive layer) is formed on the second insulating layer 97 and in the blind hole 28. Then, referring to Fig.42 , a fourth pattern mask 99 is formed on the sixth conductive metal layer 98, and the fourth pattern mask 99 at least exposes the sixth conductive metal layer 98 corresponding to the blind hole 28. Then, referring to Fig.43 , a seventh conductive metal layer 100 is formed on the area of ​​the sixth conductive metal layer 98 exposed outside the fourth pattern mask 99. Then, referring to Fig.44 and Fig.45 , remove the fourth graphic mask 99 and the sixth conductive metal layer 98 exposed outside the seventh conductive metal layer 100 , and the seventh conductive metal layer 100 and the sixth conductive metal layer 98 corresponding to the seventh conductive metal layer 100 form an outer metal circuit layer 29 .

[0152] In an optional manner, the thickness of the sixth conductive metal layer is about 1 micron, and the thickness of the seventh conductive metal layer is greater than or equal to 15 microns and less than or equal to 20 microns. Fig.45 and Fig.46 , repeat the above steps to form a plurality of stacked and distributed outer metal circuit layers 29 on the second inner metal circuit layer 92.

[0153] Next, see Fig.47 and Fig.48 A solder resist layer 30 and solder balls 31 are formed on the outermost outer metal circuit layer 29 .

[0154] For example, see Fig.47 In order to prevent the solder from overflowing and causing a short circuit during the subsequent soldering process, a solder resist layer 30 can be formed on the outermost outer metal circuit layer. The solder resist layer 30 exposes a portion of the outermost outer metal circuit layer, and a solderable anti-oxidation layer is applied to the exposed portion. Fig.48 , forming solder balls 31 on the solderable anti-oxidation layer. The solderable anti-oxidation layer can not only prevent the exposed position from being oxidized and protect the outer metal circuit layer, but also improve the solderability of the solder ball 31. In one example, the material of the solderable anti-oxidation layer can be OSP, NiAu, NiPdAu or Sn alloy. In the embodiment of the present invention, it is sufficient to ensure that the blind holes 28 when making multiple outer metal circuit layers are completely located on the second pads 93 corresponding thereto.

[0155] It should be noted that the manufacturing process of the first inner metal circuit layer 42, the second inner metal circuit layer 92, the outer metal circuit layer 29, the blind hole 28, the solder ball 31, etc. described in all the above embodiments can be performed on a single side of the substrate 1, or on both the first side and the second side. When the manufacturing process is performed on both the first side and the second side of the substrate 1, the manufacturing method of the substrate 1 structure provided by the embodiment of the present invention can be performed on both the first side and the second side of the substrate 1 to form two upper and lower opposite inner blind holes 28 in the through hole 12 of the substrate 1, and then form upper and lower first inner metal circuit layers 42 and second inner metal circuit layers 92 on the surfaces of the two inner blind holes 28, respectively, and further form a substrate 1 structure including multiple outer metal circuit layers that is symmetrical from top to bottom. The embodiment of the present invention does not limit whether the manufacturing method of the provided substrate 1 structure is performed on a single side of the substrate 1 or on both the first side and the second side.

[0156] In a second aspect, the present invention further provides a substrate structure, which is manufactured using the manufacturing method of the substrate structure described in the above technical solution.

[0157] See also Fig.26 The substrate 1 structure includes: a substrate 1, a first conductive metal layer 4 and a plugging material 22. The surface of the substrate 1 has a first face and a second face opposite to each other, and the substrate 1 has a through hole 12 that penetrates the substrate 1 in the direction from the first face to the second face. The first conductive metal layer 4 is formed on the surface of the substrate 1 and on the hole wall of the through hole 12, and the first conductive metal layer 4 includes a first inner metal circuit layer 42 located on the surface of the substrate 1, an orifice pad 43 covering the through hole 12, and a first conductive metal layer 4 located in the through hole 12. The orifice pad 43 has a first pore 44, and the first conductive metal layer 4 located in the through hole 12 has a second pore 45, and the first pore 44 is connected to the second pore 45 in the direction from the first face to the second face. The second pore 45 and the first pore 44 penetrate the substrate 1 in the direction from the first face to the second face. The plugging material 22 is formed on the substrate 1, in the first pore 44 and in the second pore 45, and the surface of the plugging material 22 away from the substrate 1, the surface of the first inner metal circuit layer 42 away from the substrate 1 and the surface of the orifice pad 43 away from the substrate 1 are all flush.

[0158] The beneficial effects of the substrate structure provided by the embodiment of the present invention are the same as the beneficial effects of the method for manufacturing the substrate structure described in the above technical solution, and will not be described in detail here.

[0159] As a possible implementation, see Figures 26 to 48The above-mentioned substrate 1 structure also includes: a first pad 90 formed on the hole pad 43, and a second pad 93 formed on the first pad 90. A first insulating layer 91 formed on the plugging material 22 located on the surface of the substrate 1 and on the first inner metal circuit layer 42, and a second inner metal circuit layer 92 formed on the first insulating layer 91. A second insulating layer 97 formed on the second inner metal circuit layer 92 and the second pad 93, and a blind hole 28 is opened on the second insulating layer 97, and the blind hole 28 is connected to the second pad 93. At least one outer metal circuit layer 29 is formed on the second insulating layer 97 and in the blind hole 28, and a solder resist layer 30 and a solder ball 31 are formed on the outermost outer metal circuit layer 29. For the description of the above structure, please refer to the first aspect and no further description is given here.

[0160] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. The above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A method for manufacturing a substrate structure, characterized in that: include: providing a substrate; The surface of the substrate has a first surface and a second surface opposite to each other; A through hole is provided along a direction from the first surface to the second surface and passes through the substrate; A first conductive metal layer is formed on the surface of the substrate and the hole wall of the through hole; the first conductive metal layer includes a first inner metal circuit layer located on the surface of the substrate, an orifice pad covering the through hole, and the first conductive metal layer located in the through hole; the orifice pad has a first pore, and the first conductive metal layer located in the through hole has a second pore; the first pore is connected to the second pore along the direction from the first surface to the second surface; the second pore and the first pore penetrate the substrate along the direction from the first surface to the second surface; forming a plugging material on the substrate and the first conductive metal layer; Removing part of the plugging material by chemical mechanical polishing to retain the plugging material located on the substrate, in the first pore and in the second pore; The surface of the reserved plugging material away from the substrate is flush with the surface of the first inner metal circuit layer away from the substrate and the surface of the orifice pad away from the substrate.

2. The method for manufacturing a substrate structure according to claim 1, characterized in that: After removing part of the plugging material by chemical mechanical polishing to retain the plugging material on the substrate, in the first pore and in the second pore, the method for manufacturing the substrate structure further includes: forming a first pad on the aperture pad; Forming a first insulating layer on the plugging material located on the surface of the substrate and on the first inner metal circuit layer, wherein the first insulating layer is located on one side of the first pad; forming a second inner metal circuit layer on the first insulating layer; A second pad is formed on the first pad.

3. The method for manufacturing a substrate structure according to claim 2, characterized in that: Forming a first pad on the aperture pad includes: forming a second conductive metal layer on the surface of the plugging material, the surface of the first inner metal circuit layer, and the surface of the hole pad; forming a first pattern mask on a surface of the second conductive metal layer, wherein the first pattern mask exposes the second conductive metal layer covering the first pore; forming a third conductive metal layer on the area of ​​the second conductive metal layer exposed outside the first pattern mask; removing the first pattern mask and the second conductive metal layer exposed outside the third conductive metal layer; The third conductive metal layer and the second conductive metal layer corresponding to the third conductive metal layer form the first pad.

4. The method for manufacturing a substrate structure according to claim 2, characterized in that: A surface of the first insulating layer away from the substrate is flush with a surface of the first pad away from the substrate.

5. The method for manufacturing a substrate structure according to claim 2, characterized in that: Forming a second inner metal circuit layer on the first insulating layer, and forming a second pad on the first pad comprises: forming a fourth conductive metal layer on the first insulating layer and the first pad; forming a second pattern mask on the surface of the fourth conductive metal layer, wherein the second pattern mask exposes a portion of the fourth conductive metal layer located above the first pad and a portion of the fourth conductive metal layer located on the first insulating layer; forming a fifth conductive metal layer on the area of ​​the fourth conductive metal layer exposed outside the second pattern mask; removing the second pattern mask and the fourth conductive metal layer exposed outside the fifth conductive metal layer; Among them, the fifth conductive metal layer located above the first insulating layer and the fourth conductive metal layer corresponding to the fifth conductive metal layer form the second inner metal circuit; the fifth conductive metal layer located above the first solder pad and the fourth conductive metal layer corresponding to the fifth conductive metal layer form the second solder pad.

6. The method for manufacturing a substrate structure according to claim 5, characterized in that: Along the direction from the first surface to the second surface, the thickness of the second inner metal circuit layer is equal to the height of the second pad.

7. The method for manufacturing a substrate structure according to claim 2, characterized in that: After forming the second pad on the first pad, the method for manufacturing the substrate structure further includes: forming a second insulating layer on the second inner metal circuit layer and the second pad; A blind hole is formed in the second insulating layer, wherein the blind hole is connected to the second pad; forming at least one outer metal circuit layer on the second insulating layer and in the blind hole; A solder resist layer and solder balls are formed on the outermost outer metal circuit layer.

8. The method for manufacturing a substrate structure according to claim 1, characterized in that: Forming a first conductive metal layer on the surface of the substrate and the hole wall of the through hole comprises: forming a seed layer on the surface of the substrate and the wall of the through hole; the thickness of the seed layer is greater than or equal to 0.3 micrometers and less than or equal to 1 micrometer; forming a third pattern mask on the seed layer located on the surface of the substrate; forming a conductive layer on the region of the seed layer exposed outside the third pattern mask; removing the third pattern mask and the seed layer exposed outside the conductive layer; The conductive layer and the seed layer corresponding to the conductive layer form the first conductive metal layer.

9. The method for manufacturing a substrate structure according to claim 2, characterized in that: The width of the orifice pad is greater than the width of the first pad; the width of the first pad is greater than the width of the second pad; the width direction of the orifice pad, the width direction of the first pad and the width direction of the second pad are all consistent and perpendicular to the direction from the first surface to the second surface; And / or, the plugging material is a dry film plugging resin material; the dry film plugging resin material is formed on the substrate and the first conductive metal layer by vacuum lamination; The method of removing part of the plugging material by chemical mechanical polishing to retain the plugging material located on the substrate, in the first pore and in the second pore includes: when the dry film type plugging resin material is cured to an incompletely cured state, the method of chemical mechanical polishing is used to remove part of the dry film type plugging resin material to retain the dry film type plugging resin material located on the substrate, in the first pore and in the second pore; wherein the incompletely cured state is 60% to 80% of the dry film type plugging resin material being cured.

10. A substrate structure, characterized in that: The substrate structure is manufactured by the manufacturing method of any one of claims 1 to 9; the substrate structure comprises: A substrate, wherein a surface of the substrate has a first surface and a second surface opposite to each other, and the substrate has a through hole penetrating the substrate in a direction from the first surface to the second surface; A first conductive metal layer is formed on the surface of the substrate and on the hole wall of the through hole; the first conductive metal layer includes a first inner metal circuit layer located on the surface of the substrate, an orifice pad covering the through hole, and the first conductive metal layer located in the through hole; the orifice pad has a first pore, and the first conductive metal layer located in the through hole has a second pore; the first pore is connected to the second pore along the direction from the first surface to the second surface; the second pore and the first pore penetrate the substrate along the direction from the first surface to the second surface; The plugging material is formed on the substrate, in the first pore and in the second pore; the surface of the plugging material away from the substrate, the surface of the first inner metal circuit layer away from the substrate and the surface of the orifice pad away from the substrate are all flush.

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