Integrated assembly and integrated power converter module

Abstract

The invention discloses an integrated assembly and an integrated power converter module. The integrated assembly comprises an inductor assembly and a first capacitor assembly. The top surface of the integrated assembly is provided with upper surface pins, and the bottom surface is provided with lower surface pins. The inductor assembly comprises a magnetic core and a main winding penetrating through the magnetic core from the top surface to the bottom surface of the magnetic core, the main winding is electrically connected with an upper surface pin and a lower surface pin, the surface of the magnetic core is provided with a capacitor setting area, and the first capacitor assembly is arranged in the capacitor setting area; the bottom surface of the electrode of the first capacitor component and the lower surface pin of the inductor component are coplanar, and the top surface of the first capacitor component is electrically isolated from the surface of the magnetic core. The capacitor assembly is integrated in the power converter module, the path length of an electric loop from the capacitor assembly to an external load is reduced as much as possible, parasitic parameters of the power converter module can be optimized through structure and layout design, and the dynamic performance of the power converter module in a vertical power supply mode is improved.

Description

Technical Field

[0001] The present invention relates to the field of power converters, and in particular to an integrated component and an integrated power converter module. Background Art

[0002] In recent years, with the development of technologies in the fields of data centers, artificial intelligence, supercomputers, etc., more and more powerful ASICs have been applied, such as CPUs, GPUs, machine learning accelerators, network switches, servers, etc., which consume a lot of current, such as thousands of amperes, and their current demand changes rapidly. Traditionally, a voltage regulator module (VRM, Voltage Regulator Modules, i.e., the power converter module involved in the present invention) composed of a step-down circuit (Buck) is used to supply such loads.

[0003] With the advancement of semiconductor technology, the voltage of these loads is getting lower and lower, now as low as 0.65V, while the current of the load continues to increase. In the low-voltage and high-current VRM module, how to improve efficiency, how to improve transient response capability, and how to improve power density have become a key to meet ASIC requirements; it is also the core issue of VRM module design;

[0004] As the load current continues to increase, the heat dissipation of the VRM module is also a key issue that needs to be considered. At present, in order to share the heat sink with the load ASIC and achieve a small thermal resistance with the top surface upward, the VRM module sets the switch device as the heat source on the top surface and the filter inductor on the bottom surface; therefore, the input power current and control signal need to be transmitted from the bottom motherboard to the top switch device, and the current sampling data and temperature sampling signals of the working status of the top switch device need to be transmitted from the top surface to the bottom motherboard; therefore, the output filter inductor in the VRM module needs to integrate the power connector and the signal connector;

[0005] In the traditional power supply mode, the VRM module and the load CPU are set on the same side of the load motherboard and placed horizontally adjacent to each other, that is, the horizontal power supply mode. In this power supply mode, the distance between the VRM module and the load CPU is far, and the impedance of the power distribution network PDN is large; when the load current is getting larger and larger, for example, as large as thousands of amperes, the loss on the PDN network cannot be ignored; in order to further improve the efficiency, it is necessary to reduce the impedance of the PDN network. Therefore, another power supply mode, the vertical power supply mode, came into being; as the name suggests, the vertical power supply mode is that the VRM module and the load CPU are stacked vertically and placed on the front and back sides of the load motherboard; the PDN path is greatly reduced and the efficiency is greatly improved, but the problem with vertical power supply is that the output voltage is directly connected to the load, and there is no space to place the output capacitor, which seriously affects the dynamic performance of the VRM module;

[0006] Therefore, how to integrate the output capacitor into the VRM module while optimizing the parasitic parameters of the electrical circuit formed between the output capacitor and the load to improve the dynamic performance and reliability of the module is an urgent problem to be solved. Summary of the invention

[0007] The purpose of the present invention is to provide an integrated power converter module, which integrates the output capacitor inside the module, optimizes the parasitic parameters of the electrical circuit formed between the output capacitor and the load, and reduces the module height as much as possible, thereby improving the dynamic performance and reliability of the module.

[0008] To achieve the above object, the present invention provides an integrated component in a first aspect, including an inductor component and a first capacitor component;

[0009] The top surface of the integrated component is provided with upper surface pins, and the bottom surface is provided with lower surface pins;

[0010] The inductor component includes a magnetic core and a main winding passing through the magnetic core from the top surface to the bottom surface of the magnetic core, the main winding is electrically connected to the upper surface pins and the lower surface pins, the surface of the magnetic core has a capacitor setting area, and the first capacitor component is set in the capacitor setting area; the bottom surface of the electrode of the first capacitor component and the lower surface pin of the inductor component are coplanar, and the top surface of the first capacitor component and the surface of the magnetic core are electrically isolated.

[0011] Preferably, the capacitor setting area is arranged at the bottom of the magnetic core, and the bottom surface of the electrode of the first capacitor component and the lower surface pin of the inductor component are coplanar.

[0012] Preferably, the integrated component also includes a second capacitor component, the top of the magnetic core has another capacitor setting area, and the second capacitor component is arranged in the capacitor setting area on the top of the magnetic core; the top surface of the electrode of the second capacitor component and the upper surface pin of the inductor component are coplanar, the bottom surface of the second capacitor component and the surface of the magnetic core are electrically isolated, and the second capacitor component is electrically isolated from the main winding.

[0013] Preferably, the first capacitor component includes a layered capacitor, which includes a first electrical plate, a second electrical plate and a dielectric layer stacked in layers, the layered capacitor is provided with a hole groove at a position corresponding to the main winding, the first electrical plate is electrically connected to a first electrical pad arranged around the hole groove, the second electrical plate is electrically connected to a second electrical pad arranged on at least one side of the layered capacitor, and the dielectric layer is arranged between the first electrical plate and the second electrical plate.

[0014] Preferably, the layered capacitor is arranged in the capacitor arrangement area by first sintering and then assembling.

[0015] Preferably, the layered capacitor is formed by in-situ sintering of capacitor blanks.

[0016] Preferably, the integrated component further comprises an integrated substrate, the inductor component and the first capacitor component are embedded in the integrated substrate, and the upper surface pins and the lower surface pins are both arranged at the top and the bottom of the integrated substrate.

[0017] Preferably, the integrated substrate comprises a bottom wiring layer;

[0018] The bottom wiring layer is used to rearrange the pins on the bottom surface of the integrated component;

[0019] The integrated substrate further comprises a vertical electrical connector, and / or a vertical electrical connector is disposed on a side of the inductor component;

[0020] One end of the vertical electrical connector is electrically connected to the bottom wiring layer;

[0021] At least a portion of the vertical electrical connectors are power electrical connectors; at least a portion of the vertical electrical connectors are signal electrical connectors.

[0022] Preferably, the first capacitor component is an output capacitor component, the output capacitor component is arranged at the bottom of the magnetic core, and one electrode of the output capacitor component is electrically connected to the main winding through the bottom wiring layer.

[0023] Preferably, the integrated substrate includes a top wiring layer and a bottom wiring layer; the integrated assembly further includes a top assembly, and the top assembly includes a top plate and an IPM unit;

[0024] The top wiring layer is electrically connected to the top component, and the bottom wiring layer is used to rearrange the bottom pins of the integrated component;

[0025] The integrated component further comprises a vertical electrical connector, and / or a vertical electrical connector is disposed on a side of the inductor component;

[0026] Two ends of the vertical electrical connector are electrically connected to the top wiring layer and the bottom wiring layer respectively.

[0027] Preferably, the integrated component also includes an insulating substrate, one side of the insulating substrate is close to the capacitor setting area, and the first capacitor component is fixed on the other side of the insulating substrate; the insulating substrate includes two through holes for the main winding to pass through; the insulating substrate is used to achieve electrical isolation between the first capacitor component and the surface of the magnetic core.

[0028] Preferably, the capacitor setting area is a recessed area arranged at the bottom of the magnetic core, and the recessed area is connected to at least one side surface of the magnetic core.

[0029] Preferably, the capacitor setting area is a recessed area arranged at the bottom of the magnetic core, and the recessed area is connected to two opposite side surfaces of the magnetic core.

[0030] Preferably, the integrated component further comprises a vertical electrical connector, and the vertical electrical connector is arranged on a side of the inductor component;

[0031] The two ends of the vertical electrical connector form an upper surface pin and a lower surface pin at the top and bottom of the inductor component respectively;

[0032] At least a portion of the vertical electrical connectors are power electrical connectors; at least a portion of the vertical electrical connectors are signal electrical connectors.

[0033] Preferably, at least one of the first capacitor components and the magnetic core are fixedly connected by adhesive.

[0034] Preferably, the integrated component further includes at least one middle plastic package, which covers at least a portion of the surface of the inductor component and at least one of the first capacitor components, and the middle plastic package is provided with electrical connection windows at positions corresponding to the electrodes of the inductor component and the electrodes of the first capacitor component.

[0035] Preferably, at least one of the first capacitor components comprises an integrated silicon capacitor.

[0036] Preferably, at least one of the first capacitor components includes a plurality of capacitor elements, and electrodes of the plurality of capacitor elements are arranged in a triangular staggered array.

[0037] Preferably, the inductor assembly further includes auxiliary windings whose number corresponds to the main windings, the auxiliary windings are arranged side by side and adjacent to the corresponding main windings, the auxiliary windings are electrically isolated from the corresponding main windings and have magnetic coupling, and the auxiliary windings are used to implement TLVR technology.

[0038] Preferably, the auxiliary winding and the main winding respectively have a transverse winding section, the auxiliary winding and the corresponding main winding are magnetically coupled in the transverse winding section, and both ends of the auxiliary winding are arranged on the bottom surface of the magnetic core.

[0039] Preferably, the end surface of the main winding located on the bottom surface of the magnetic core has a chamfer or a corner notch, and a corresponding end surface of the auxiliary winding is arranged at a position adjacent to the chamfer or the corner notch.

[0040] Preferably, a wiring conversion layer is further provided on the bottom surface of the integrated component, and the wiring conversion layer is used to rearrange the bottom pins of the integrated component; the number of the main windings is at least two, and the auxiliary windings are connected in series through the wiring conversion layer to form a multi-phase TLVR loop.

[0041] Preferably, the number of the main windings is two, each of the main windings has a transverse winding segment, and when the direction from the top surface to the bottom surface of the magnetic core is the positive direction of the current, the current directions in the two transverse winding segments are opposite; the inductor component also includes an auxiliary winding, the auxiliary winding is a loop shape, at least two parts of the auxiliary winding are respectively arranged side by side and adjacent to the two transverse winding segments, and the auxiliary winding is used to implement TLVR technology.

[0042] Preferably, it further comprises a metal shielding layer, wherein the metal shielding layer is arranged on the side surface or inside the side surface of the integrated component.

[0043] A second aspect of the present invention provides an integrated power converter module, the integrated power converter module being applied to a vertical power supply mode, comprising a top component and an integrated component as claimed in claim 2;

[0044] The top component includes a top plate, an IPM unit and a second capacitor component; the top component is arranged on the top of the integrated component, the IPM unit and the main winding are electrically connected through the top plate; the second capacitor component and the IPM unit are electrically connected through the top plate.

[0045] Preferably, the top component also includes a top plastic package; the second capacitor component includes a ceramic capacitor and a semiconductor capacitor; the IPM unit and the semiconductor capacitor are arranged on the top surface of the top plate, and the ceramic capacitor is arranged on the bottom surface of the top plate; the top plastic package covers the top plate, the IPM unit and the second capacitor component; the ceramic capacitor and the semiconductor capacitor are used to form a multi-stage decoupling.

[0046] Preferably, the IPM unit is buried in the upper part of the top plate, and the second capacitor component is buried in the lower part of the top plate.

[0047] A third aspect of the present invention provides an integrated component, comprising an inductor component and a bottom substrate unit;

[0048] The top surface of the integrated component is provided with upper surface pins, and the bottom surface is provided with lower surface pins;

[0049] The bottom substrate unit includes a bottom substrate, a metal column and a first capacitor component;

[0050] The inductor component includes a magnetic core and a main winding passing through the magnetic core from the top surface to the bottom surface of the magnetic core, and the inductor is arranged on the upper surface of the bottom substrate; the two ends of the first capacitor component are electrically connected to the corresponding metal pillars through the bottom substrate; the metal pillars are electrically connected to the main winding respectively; the wiring in the bottom substrate makes the electrical network of the partial or all pads on the lower surface of the bottom substrate and the electrical network of the partial or all pads on the upper surface of the bottom substrate satisfy a one-to-one correspondence in position.

[0051] Preferably, the metal column and the first capacitor assembly are arranged on the lower surface of the bottom substrate, and the lower surface of the bottom substrate and the metal column are plastic-sealed to form a plastic-sealed body; a window is opened on the lower surface of the plastic-sealed body and a lower surface pin is formed by electroplating.

[0052] Preferably, the metal column and the first capacitor component are arranged inside the bottom substrate, and the lower surface pins arranged at the bottom of the bottom substrate are electrically connected to the positive electrode and the negative electrode of the metal column and the first capacitor component respectively.

[0053] Preferably, the integrated component is an integrated power converter module, which further includes a top component, and the top component includes an IPM unit and a top plate; the top component is arranged on the top of the integrated power converter module, and the IPM unit and the main winding are electrically connected through the top plate.

[0054] Preferably, the top assembly further comprises a top plastic package body, wherein the top plastic package body covers at least a portion of the top surface of the top plate and the IPM unit.

[0055] Preferably, the top component further includes a control unit, and the control unit is electrically connected to the IPM unit.

[0056] Preferably, external pads are provided at the bottom of the integrated component, and at least a portion of the external pads corresponding to electrodes of different electrical properties are arranged in an alternating array.

[0057] Preferably, the top component also includes a second capacitor component and a top plastic package; the second capacitor component is arranged on the bottom surface of the top plate; the top plastic package covers the top plate and the second capacitor component; the second capacitor component and the IPM unit are electrically connected through the top plate.

[0058] Preferably, the integrated component is an integrated power converter module, which also includes a top component, which includes a top plate, an IPM unit, a second capacitor component and a top plastic package; the second capacitor component includes a ceramic capacitor and a semiconductor capacitor; the IPM unit and the semiconductor capacitor are arranged on the top surface of the top plate, and the ceramic capacitor is arranged on the bottom surface of the top plate; the top component is arranged on the top of the integrated power converter module, and the IPM unit and the main winding are electrically connected through the top plate; the top plastic package covers the top plate, the IPM unit and the second capacitor component; the second capacitor component and the IPM unit are electrically connected through the top plate; the ceramic capacitor and the semiconductor capacitor are used to form a multi-stage decoupling.

[0059] Preferably, the integrated component is an integrated power converter module, which also includes a top component, and the top component includes a top plate, an IPM unit and a second capacitor component; the IPM unit is buried in the upper part of the top plate, and the second capacitor component is buried in the lower part of the top plate; the second capacitor component and the IPM unit are electrically connected through the top plate; the top component is arranged on the top of the integrated power converter module, and the IPM unit and the main winding are electrically connected through the top plate.

[0060] A fourth aspect of the present invention provides an integrated power converter module, the integrated power converter module is applied to a vertical power supply mode, and comprises a top component, a middle component and a bottom component;

[0061] The top assembly includes an IPM unit;

[0062] The middle component includes an inductor component; the inductor component includes a magnetic core, a main winding passing through the magnetic core from the top surface to the bottom surface of the magnetic core, and a side electrical connector arranged on the side surface of the magnetic core;

[0063] The bottom assembly includes a bottom substrate, at least one capacitive element, and a plurality of metal conductive paths;

[0064] The top surface of the middle component is electrically connected to the top component;

[0065] The bottom surface of the middle component is electrically connected to the top surface of the bottom substrate, the side electrical connector is electrically connected to the metal conductive path through the bottom substrate; the main winding is electrically connected to the capacitor element through the bottom substrate;

[0066] The bottom surface of the electrode of the capacitor element is coplanar with the bottom surface of the metal conductive path.

[0067] Preferably, the bottom component further includes a bottom plastic package, which covers at least a portion of the bottom surface of the bottom substrate, the metal conductive path and the capacitor element, and the bottom surface of the electrode of the capacitor element and the bottom surface of the metal conductive path are exposed from the bottom plastic package.

[0068] Preferably, it further comprises a double-sided plastic package body, which covers at least a portion of the top component and at least a portion of the bottom component, and the bottom surface of the capacitor element and the bottom surface of the metal conductive path are exposed from the double-sided plastic package body.

[0069] Preferably, the metal conductive path includes a metal column, and the capacitor element and the metal column are buried in the bottom substrate.

[0070] Preferably, the metal conductive path comprises a conductive hole, and the conductive hole is formed by drilling a hole in the plastic package body and electroplating the hole wall.

[0071] Preferably, it further comprises an integrated substrate, the middle component and the bottom component are buried in the integrated substrate, and the top component is arranged on the top surface of the integrated substrate.

[0072] Preferably, the top component further comprises a top plastic package, and the top plastic package covers at least a portion of the top surface of the IPM unit and the integrated substrate.

[0073] Preferably, the integrated substrate comprises a top wiring layer, a bottom wiring layer and vertical electrical connectors;

[0074] The top wiring layer is electrically connected to the top component, and the bottom wiring layer is used to rearrange the bottom pins of the integrated power converter module; the two ends of the vertical electrical connector are electrically connected to the top wiring layer and the bottom wiring layer respectively; at least a portion of the vertical electrical connector is a signal electrical connector.

[0075] Preferably, the inductor assembly further includes auxiliary windings whose number corresponds to the main windings, the auxiliary windings are arranged side by side and adjacent to the corresponding main windings, the auxiliary windings are electrically isolated from the corresponding main windings and have magnetic coupling, and the auxiliary windings are used to implement TLVR technology.

[0076] Preferably, the auxiliary winding and the main winding respectively have a transverse winding section, the auxiliary winding and the corresponding main winding are magnetically coupled in the transverse winding section, and both ends of the auxiliary winding are arranged on the bottom surface of the magnetic core; the number of the main windings is at least two, and the auxiliary windings are connected in series through the bottom component to form a multi-phase TLVR loop.

[0077] Preferably, the number of the main windings is two, each of the main windings has a transverse winding segment, and when the direction from the top surface to the bottom surface of the magnetic core is the positive direction of the current, the current directions in the two transverse winding segments are opposite; the inductor component also includes an auxiliary winding, the auxiliary winding is a loop shape, at least two parts of the auxiliary winding are respectively arranged side by side and adjacent to the two transverse winding segments, and the auxiliary winding is used to implement TLVR technology.

[0078] Preferably, pads are provided at the bottom of the integrated power converter module, and at least a portion of the pads corresponding to electrodes of different electrical properties are arranged in an alternating array.

[0079] A fifth aspect of the present invention provides an integrated component, comprising an inductor component, a plastic package and a capacitor component;

[0080] The inductor assembly comprises a magnetic core and a main winding passing through the magnetic core from the top surface to the bottom surface of the magnetic core; one end of the main winding is electrically connected to the top surface of the integrated assembly; the other end of the main winding is electrically connected to the bottom surface of the integrated assembly;

[0081] The capacitor component is fixed above and / or below the inductor component through a plastic package, and the electrodes of the capacitor component are exposed on the surface of the plastic package.

[0082] Preferably, it also includes an external electrode, one end of which is exposed on the surface of the plastic package and flush with the electrode of the capacitor assembly, and the other end of which is electrically connected to the main winding. The external electrode is a metal column or a conductive hole.

[0083] Preferably, the main winding passes through the plastic package, and one end of the main winding is exposed on the surface of the plastic package and is flush with the electrode of the capacitor assembly.

[0084] Preferably, the capacitor assembly includes a plurality of capacitor elements, one electrode of the capacitor element is exposed on the surface of the plastic package body, and the other electrode of the capacitor element is led out to the surface of the plastic package body through an opening on the plastic package body.

[0085] Preferably, the capacitor assembly includes a plurality of capacitor elements, and the capacitor elements are fixedly connected by glue and a magnetic core; the capacitor assembly is leveled by a carrier before plastic packaging.

[0086] Preferably, the capacitor component includes a first capacitor component and a second capacitor component; the first capacitor component is arranged below the inductor component; and the second capacitor component is arranged above the inductor component.

[0087] Preferably, the second capacitor assembly and the first capacitor assembly respectively include multiple capacitor elements, and the capacitor elements are fixedly connected by glue and a magnetic core; the second capacitor assembly and the first capacitor assembly are respectively fixed by a single plastic packaging; the second capacitor assembly is leveled by a carrier before plastic packaging; the first capacitor assembly is leveled by a carrier before plastic packaging.

[0088] Preferably, at least two main windings are provided; and the inductor component is a multi-phase inductor.

[0089] Preferably, the integrated component is an integrated power converter module, which is applied to a vertical power supply mode; the integrated component also includes an IPM unit; the IPM unit is arranged above the inductor component; the capacitor component includes a second capacitor component, which is arranged between the inductor component and the IPM unit; the IPM unit is electrically connected to the main winding; the IPM unit is electrically connected to the second capacitor component.

[0090] A sixth aspect of the present invention provides an integrated assembly, comprising a top assembly;

[0091] The top assembly includes an IPM unit and a top plate;

[0092] The IPM unit is arranged on the top surface of the top plate, or the IPM unit is buried in the top of the top plate;

[0093] A capacitor component is disposed on the bottom surface of the top plate, or a capacitor component is buried in the bottom of the top plate;

[0094] The capacitor assembly and the IPM unit are electrically connected through the top plate.

[0095] Preferably, the top component further comprises a plastic sealing body, and the plastic sealing body covers the top surface of the top plate and / or the bottom surface of the top plate.

[0096] Preferably, the top component further includes a control unit, and the control unit is electrically connected to the IPM unit.

[0097] Preferably, the capacitor assembly is specifically arranged on the bottom surface of the top plate, and the bottom surface of the top plate is also provided with a power column pin; the plastic package at least covers the bottom surface of the top plate, the capacitor assembly and the power column pin; the bottom surface of the power column pin is exposed to the plastic package, and the power column pin is used to lead the electrode of the IPM unit to the bottom surface of the plastic package.

[0098] Preferably, the capacitor assembly is specifically arranged on the bottom surface of the top plate, and the plastic package body at least covers the bottom surface of the top plate and the capacitor assembly; an electrical connection hole is provided on the plastic package body, one end of the electrical connection hole is located on the bottom surface of the top plate, and the other end of the electrical connection hole is located on the lower surface of the plastic package body, and a power electroplating pin is provided in the electrical connection hole, and the power electroplating pin is used to lead the electrode of the IPM unit to the bottom surface of the plastic package body.

[0099] Preferably, the capacitor assembly includes a ceramic capacitor.

[0100] Preferably, a semiconductor capacitor is also provided on the top surface of the top plate, and the semiconductor capacitor is electrically connected to the IPM unit through the top plate; the ceramic capacitor and the semiconductor capacitor are used to form a multi-stage decoupling.

[0101] Preferably, the capacitor component includes a semiconductor capacitor.

[0102] Preferably, the integrated component is an integrated power converter module, and the integrated power converter module is applied to a vertical power supply mode; the integrated component further comprises an inductor component; the inductor component comprises a magnetic core and a main winding passing through the magnetic core from the top surface to the bottom surface of the magnetic core;

[0103] The top assembly is disposed on the top of the integrated assembly, and the IPM unit and the main winding are electrically connected through a top plate.

[0104] Compared with the prior art, the present invention has the following beneficial effects:

[0105] 1. The present invention integrates the capacitor component into the power converter module, while minimizing the path length of the electrical loop from the capacitor component to the external load, and can optimize its parasitic parameters through structural and layout design, thereby improving the dynamic performance of the power converter module in the vertical power supply mode; on the other hand, by making the capacitor occupy a layer of space in the height direction rather than the peripheral space around the magnetic core / IPM unit in the horizontal direction, the horizontal area of ​​the power converter module is reduced and its shape is optimized;

[0106] 2. The present invention moves the higher second capacitor component from the top component to the middle component, that is, integrates it with the inductor component first, so that the IPM unit and control unit of the top component can use thinner devices without sacrificing performance, thereby reducing the space they occupy and facilitating heat dissipation. Under the condition that other conditions remain unchanged, the module height can be reduced, thereby improving the power density of the power converter module, or more height space can be given to the magnetic core under the condition that the overall height remains unchanged, thereby improving the performance of the power converter module; at the same time, the length of the electrical loop path from the second capacitor component to the IPM unit is reduced, the parasitic inductance is reduced, and the switching loss is reduced;

[0107] 3. The embedded process of the integrated substrate of the present invention can reduce the number of welding times, simplify the process and improve reliability. The plastic sealing treatment to protect the solder joints can also improve reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0108] Figure 1 A circuit diagram of a two-phase VRM module in the prior art;

[0109] Figures 2a to 2k This is a schematic diagram of the structure of Embodiment 1 of the present invention;

[0110] Figures 3a to 3e This is a schematic diagram of the structure of Embodiment 2 of the present invention;

[0111] Figure 4a to Figure 4b This is a schematic diagram of the structure of Embodiment 3 of the present invention;

[0112] Figure 5a to Figure 5d This is a schematic diagram of the structure of Embodiment 4 of the present invention;

[0113] Figures 6a to 6d This is a schematic diagram of the structure of Embodiment 5 of the present invention;

[0114] Figures 7a to 7d This is a schematic diagram of the structure of Embodiment 6 of the present invention;

[0115] Figures 8a to 8d This is a schematic diagram of the structure of Embodiment 7 of the present invention;

[0116] Fig. 9 This is the circuit schematic diagram of TLVR technology;

[0117] Figure 10a to Figure 10h This is a schematic diagram of the structure of Embodiment 8 of the present invention;

[0118] Figure 11 to Figure 12c is a schematic diagram of Embodiment 9 of the present invention;

[0119] Figures 13a to 13c This is a schematic diagram of the structure of Embodiment 10 of the present invention;

[0120] Figures 14a to 14g is a schematic diagram of the eleventh embodiment of the present invention;

[0121] Figure 15A to Fig.15d is a schematic diagram of Embodiment 12 of the present invention;

[0122] Figures 16a to 18 is a schematic diagram of Embodiment 13 of the present invention;

[0123] Figures 19a to 19c The figure is a schematic diagram of embodiment 14 of the present invention. DETAILED DESCRIPTION

[0124] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0125] Figure 1The circuit structure of a two-phase VRM module in the prior art is shown, and those skilled in the art can also derive the basic circuit structure of VRM modules with other phases by analogy. A complete two-phase VRM module 10 includes: IPM units 121 / 122; two-phase inductors 200 (Choke, the two main windings L1 / L2 of the two-phase inductors 200 may or may not have magnetic coupling); VIN electrical connectors 2301 / 2302, which are short-circuited in parallel and connected to the positive input terminal of the VRM module 10 (when used, the positive input terminal is connected to an external input power source 400, i.e., DC Source), namely, VIN terminal 170; GND electrical connectors 2401 / 2402, which are short-circuited in parallel and connected to the negative input terminal of the VRM module 10, namely, GND terminal 150; second capacitors 1301-1313 (Cin) are connected across the positive input terminal and the negative input terminal, and the second capacitors 1301-1313 are used to bypass high-frequency switch ripple current to ensure input voltage stability; signal electrical connectors 270a / b / c are used to transmit signals such as drive and control; The signal electrical connector 270a / b is used for connection between the control unit 123 (Controller) and the IPM unit 121 / 122, and the signal electrical connector 270c is used for signal connection between the control unit 123 and the load (Load, whose equivalent resistance is Rload; the load is usually a CPU, GPU, etc., and usually has powerful data processing and communication capabilities); the signal electrical connector 270c can also be used for communication connection between the control unit 123 and the host computer chip; the IPM unit 121 includes two switching devices and a Driver, and the two switching devices are respectively a high-end MOSFET and a low-end MOSFET, and the two MOSFETs are connected in series to form a bridge arm; one end of the bridge arm is connected to the VIN terminal 170; the other end of the bridge arm is connected to the GND terminal 150; the structure of the IPM unit 122 is the same as that of the IPM unit 121; the voltage waveform phase difference of the bridge arm midpoint 1212 / 1222 (SW, also known as the switching point) of the bridge arm of the IPM unit 121 / 122 satisfies 180 degrees, and They are respectively connected to the input terminals 221a / 222a of the two-phase inductor 200; the output terminals 221b / 222b of the two-phase inductor 200 are connected in parallel to form the positive output terminal of the VRM module 10, that is, the Vo terminal 160 is electrically connected to the load (in some other embodiments, the output terminals 221b / 222b may not be connected in parallel or are not connected in parallel within the two-phase VRM module 10), providing energy to the load; the first capacitor 360 (Co) is connected in parallel at both ends of the load, for filtering the voltage at both ends of the load and providing the transient energy required by the load.In some comparative examples of the prior art, the first capacitor 360 is arranged outside the two-phase VRM module 10; while the integrated power converter module of the present invention (a two-phase VRM module when the number of phases is 2) integrates the IPM unit 121 / 122, the two-phase inductor 200, the VIN electrical connector 2301 / 2302, the GND electrical connector 2401 / 2402, and the signal electrical connector 270a / b / c to form an integrated component, and the first capacitor 360 is also integrated therein; in some embodiments of the present invention, further, the second capacitors 1301~1313 or part of them are also integrated together.

[0126] Embodiment 1

[0127] Figure 2a The overall structure of the integrated power converter module according to the first embodiment of the present invention is shown. Figure 2b yes Figure 2a Exploded diagram of Figure 2a and Figure 2b As shown, the two-phase VRM module 10 of this embodiment includes a top component 100, a middle component 200 and a bottom component 300; Figure 2c yes Figure 2b Schematic diagram of the structure of the middle top component 100; the top component 100 includes a top plate 110, an IPM unit 121 / 122, a control unit 123, a second capacitor 130, and other passive components 140; the IPM unit 121 / 122 is arranged at a position close to the first side of the top plate 110; the signal pins of the IPM unit 121 / 122 are arranged in a direction opposite to the first side, that is, toward the third side (corresponding to the third side of the middle component 200); the control unit 123 controls the two IPM units 121 / 122, so the control Unit 123 is arranged at a position close to the intersection of the midline between the IPM units 121 / 122 and the third side (in some other embodiments with more phases, the control unit can also control more IPM units and be arranged at the layout center of the corresponding IPM units); and the second capacitor 130 and other passive components 140 need to be close to the IPM units 121 / 122 to achieve good filtering effects, so the other passive components 140 are arranged on the third side, and the second capacitor 130 is arranged between the IPM units 121 / 122.

[0128] In a preferred embodiment, the control unit 123 and the IPM unit 121 or 122 can be integrated into one package or one wafer, so that the number of components of the top assembly 100 is reduced and the layout is simpler.

[0129] Figure 2d is a structural exploded view of the middle component 200; Figure 2dAs shown, the middle component 200 is formed by the integrated component 600 after plastic packaging. The electrical connection window 271a is opened on the top and bottom surfaces of the formed plastic package body 270 by laser direct writing or other methods to expose the electrodes of the integrated component 600; then the electrodes are treated to be weldable by electroplating or other methods, that is, the pads 271b / 272b are formed; so that the middle component 200 can be reliably welded with the top component 100 and the bottom component 300. The integrated component 600 includes an inductor component 210 and a first capacitor component 260. The inductor component 210 not only integrates Figure 1 The magnetic material of the two-phase inductor 200 and its two main windings L1 and L2 are integrated. Figure 1 The VIN electrical connector 2301 / 2302, the GND electrical connector 2401 / 2402, and the signal electrical connector 270c are shown; wherein the signal electrical connector 270c is integrated on the side of the inductor component 210 by electroplating, as shown in the signal electrical connector 251. The first capacitor component 260 integrates a plurality of capacitors to realize Figure 1 The first capacitor 360 is shown to function.

[0130] In a preferred embodiment, if Figure 2e As shown, the signal electrical connector 251 is implemented by electroplating on the third side of the middle component 200 after the integrated component 600 is plastic-sealed, as shown in the signal electrical connector 251; the capacitor electrodes of different electrical properties in the first capacitor component 260 are connected to the load in a two-dimensional alternating arrangement, that is, corresponding to Figure 1 The Vo terminal 160 and the GND terminal 150 are arranged alternately to reduce the parasitic inductance of the electrical loop formed by the first capacitor and the load, thereby improving the dynamic performance of the output voltage of the VRM module 10.

[0131] The integrated component 600 includes an inductor component 210 and a capacitor component 260; Figure 2f yes Figure 2d An exploded view of the integrated assembly 600, Figure 2f Relative to Figures 2a to 2d It is mirrored in the up and down directions, that is, Figure 2f The bottom structure of the integrated component 600 is mainly shown, while the corresponding relationship in the horizontal direction remains unchanged; Figure 2f As shown, the first capacitor component 260 includes a substrate 261 and a capacitor element 262, wherein the capacitor element 262 corresponds to Figure 1 The first capacitor 360; the substrate 261 has an insulating function, such as a ceramic substrate, and two through holes 2611 / 2612 are opened in the middle of the substrate 261; the main winding 221 / 222 passing through the through holes 2611 / 2612 is electrically connected to the Vo+Pad of the bottom component 300, that is, corresponding to Figure 1The main windings L1 / L2 are electrically connected to the Vo terminal 160 respectively. The main windings 221 / 222 and the through holes 2611 / 2612 also play a role in positioning and limiting the first capacitor component 260; the capacitor element 262 of this embodiment is a plurality of chip capacitors, and the capacitor element 262 is fixed on the substrate 261 by adhesive, and the capacitor element 262 is electrically isolated from the magnetic core 211 by the substrate 261; due to the existence of the substrate 261, the capacitor element 262 can be mounted on the substrate 261 by an automatic chip mounter, which greatly shortens the bonding and fixing time between the capacitor element 262 and the substrate 261, thereby further shortening the bonding and fixing time between the capacitor element 262 and the magnetic core 211, and improving production efficiency. The electrodes of the capacitor element 262, that is, corresponding to Figure 1 The Vo terminal 160 and the GND terminal 150 are electrically connected to the Vo+Pad and Vo-Pad of the bottom component 300 respectively; the bottom component 300 is a bottom wiring conversion layer, which is used to rearrange the bottom pins of the VRM module 10 to meet the needs of industrial standardized pins or customized packaging pins. Since the capacitor element 262 is located between the inductor component 210 and the bottom component 300, the capacitor element 262 is closer to the load and reduces the parasitic parameters of the load circuit; when the load current jumps rapidly, the capacitor element 262 can quickly provide energy to the load to ensure the stability of the output voltage, which is conducive to improving the dynamic performance of the output voltage of the VRM module 10.

[0132] The inductor assembly 210 includes a magnetic core 211, a main winding 221 / 222, a first power electrical connector 231 / 232, a second power electrical connector 241 / 242, and a signal electrical connector 251; wherein the main winding 221 / 222 corresponds to Figure 1 The main winding L1 / L2, the first power electrical connector 231 / 232 corresponds to Figure 1 The VIN electrical connector 2301 / 2302 and the second power electrical connector 241 / 242 correspond to Figure 1 The GND electrical connector 2401 / 2402 and the signal electrical connector 251 correspond to Figure 1 The signal electrical connector 270c shown. The main winding 221 is the first winding, and the main winding 222 is the second winding; the first winding and the second winding are both "I"-shaped metal conductive paths, and the two ends are respectively arranged on the top surface and the bottom surface of the magnetic core 211; the "I"-shaped metal conductive path winding has low DC impedance and low DC conduction loss, which can effectively improve the efficiency, especially conducive to improving the efficiency under heavy load; at the same time, the cylindrical winding makes the magnetic flux generated by the current in the cylindrical winding have the shortest magnetic flux path, which is conducive to improving the inductance and reducing the core loss; this is also conducive to improving the efficiency under light load.

[0133] The main winding 221 / 222 has a first pad on the top surface of the magnetic core 211 for connecting to the SW Pad of the IPM unit 121 / 122 in the top component. The main winding 221 / 222 has a second pad on the bottom surface of the magnetic core 211 for connecting to the load through the bottom component 300 and supplying power to the load. The first pad and the second pad are connected at Figure 2f Not shown; the position of SW Pad corresponds vertically to the position of the main winding 221 / 222, which can reduce the loss caused by the lateral current, thereby improving efficiency.

[0134] The first power electrical connector 231 / 232 and the second power electrical connector 241 / 242 are both "I"-shaped circular metal conductive paths, similar to the main winding 221 / 222, and are provided with a first pad and a second pad at both ends thereof. Figure 2f Similarly, the “I”-shaped circular metal conductive path has low DC impedance and low DC conduction loss, which is conducive to improving efficiency; at the same time, the “I”-shaped circular metal conductive path is easy to be integrally formed with the magnetic core 211, which simplifies the manufacturing process and improves reliability.

[0135] The first power electrical connector 231 / 232 corresponds to Figure 1 VIN electrical connector 2301 / 2302; second power electrical connector 241 / 242 corresponds to Figure 1 GND electrical connector 2401 / 2402; refer to Figure 1 , there is a parasitic inductance in the power input loop formed by the VIN electrical connector 2301 / 2302, the IPM unit 121 / 122 and the GND electrical connector 2401 / 2402; the presence of the parasitic inductance will form a resonance with the second capacitor Cin. If the resonance frequency is close to the equivalent switching frequency of the VRM, the current amplitude of the parasitic inductance increases, which will interfere with the normal operation of the VRM module and cause the power circuit efficiency to decrease (if the PWM phases of the IPM units 121 / 122 are the same, the equivalent operating frequency of the two-phase buck circuit is equal to the switching frequency of the IPM; if the PWM phases of the IPM units 121 / 122 differ by 180 degrees, the equivalent operating frequency is equal to twice the switching frequency of the IPM). In this embodiment, if Figure 2f As shown, the first power electrical connector 231 / 232 and the second power electrical connector 241 / 242 are arranged alternately to reduce the parasitic inductance of the power input circuit; the resonant frequency between the parasitic inductance and Cin is increased to make it much higher than the equivalent switching frequency of the VRM module, thereby reducing the impact of oscillation on the efficiency of the VRM module and improving efficiency; and the first power electrical connector 231 is composed of two "I"-shaped metal conductive paths in parallel (the first power electrical connector 232 and the second power electrical connector 241 / 242 are the same), which can reduce its DC impedance and further improve efficiency.

[0136] The bottom of the magnetic core 211 has a recessed portion, which (after deducting the space occupied by the main winding 221 / 222) is the capacitor setting area 212; the first capacitor component 260 and the magnetic core 211 can be fixed by adhesive, and the bottom surface of the electrode of the capacitor element 262 of the first capacitor component 260 after being fixed is coplanar with the bottom surface of the electrode of the inductor component 210, so as to meet the requirements of the subsequent plastic packaging process and electrode flatness. On the whole, after the inductor component 210 and the first capacitor component 260 are glued together, the inductor component 210 and the first capacitor component 260 are plastic-sealed together by plastic packaging material, and further windows are opened on the surface of the plastic package or electroplated to generate SMD pins, so that the integrated component 600 becomes a packaged whole, which greatly improves the reliability of the product on the one hand, and greatly improves the flatness of the SMD pins on the other hand, and improves the welding quality of the integrated component 600.

[0137] In a preferred embodiment, the plastic encapsulation process can also place the electrode surface of the first capacitor component 260 and the bottom surface of the inductor component 210 on the same horizontal plane for plastic encapsulation at the same time, without first fixing the first capacitor component 260 and the magnetic core 211 with adhesive; this method can better maintain the electrode of the capacitor element 262 and the bottom surface electrode of the inductor component 210 on the same horizontal plane after plastic encapsulation, and the gap between the first capacitor component 260 and the inductor component 210 is filled and bonded by the plastic encapsulation material.

[0138] In a preferred embodiment, only the step of gluing the inductor component 210 and the first capacitor component 260 together may be retained and the plastic packaging process may be omitted to reduce the cost.

[0139] In a preferred embodiment, if Figure 2g As shown, the bottom surface of the bottom component 300 can form solder balls 390 by ball planting, thereby forming a BGA package; wherein the solid dots represent the corresponding Figure 1 The welded ball 390 at the Vo end 160, the hollow dots represent the corresponding Figure 1 The solder ball 390 of the GND terminal 150 of the capacitor 262 is connected to the GND terminal 150 of the capacitor 262; the solder ball corresponds to the electrical network formed by the alternating arrangement of the Vo terminal 160 and the GND terminal 150, and the electrical network corresponding to the Vo terminal 160 and the GND terminal 150 of the first capacitor component 260 satisfies the one-to-one position relationship, thereby reducing the parasitic inductance between the electrode of the capacitor element 262 and the solder ball 390, which also helps to further improve the dynamic performance of the module. In another preferred embodiment, the bottom surface of the bottom component 300 can also form an LGA package.

[0140] In a preferred embodiment, if Figure 2hAs shown, the electrodes of the first capacitor component 260 are arranged in a triangular array with a common edge. Specifically, the spacing between the three electrodes shown in a, b, and c in the figure is that ab is equal to bc and ca is equal to form an equilateral triangle. Several such equilateral triangles can be found in the electrodes of the first capacitor component 260, and these equilateral triangles share a common edge in pairs. Further, the electrode electrical network of the first capacitor component 260 satisfies the alternating arrangement of the Vo terminal 160 and the GND terminal 150, so that it can meet the one-to-one position relationship with the pins on the bottom surface of the bottom component 300, so that the parasitic inductance of the path between the electrode of the capacitor element 262 and the load is theoretically minimized to achieve the best dynamic performance.

[0141] In a preferred embodiment, if Figures 2i to 2k As shown, the capacitor element 262 is a layered capacitor. Figure 2j yes Figure 2i The structural decomposition diagram of the layered capacitor is shown in FIG. 2 ; there are two ways to realize the setting of the layered capacitor: one is that the capacitor element 262 and the substrate 261 are sintered and then assembled with the inductor component 210 through an adhesive. This method allows the capacitor and the inductor to each perform at their best performance, because the annealing temperatures at which the capacitor and the inductor perform at their best performance are different. In a preferred embodiment, the substrate 261 can be omitted through process optimization without affecting the performance of the power converter module, thereby achieving the purpose of reducing costs and saving space. In another preferred embodiment, the blanks of the substrate 261, the capacitor element 262, and the inductor component 210 can be assembled together first, and then the inductor and the capacitor are annealed together; the two annealing processes are changed to one annealing process, which can improve production efficiency, simplify the production process, and reduce production costs.

[0142] Figure 2k is a side exploded view of the first capacitor assembly 260, as shown Figure 2k As shown, the layered capacitor includes a first electrical plate 2621, a second electrical plate 2622 and a dielectric layer 2623. The first electrical plate 2621 and the second electrical plate 2622 are stacked together layer by layer with the dielectric layer 2623 as the spacing; the electrode material and the dielectric material are provided with two through holes to avoid the position of the main winding 221 / 222. The first electrical plate 2621 serves as a positive plate, and its positive electrode pad 2621a is arranged at the position of the through hole; since the positive electrode of the capacitor element 262 is at the same potential as the output end of the main winding 221 / 222, the positive electrode pad 2621a is arranged at the position of the through hole for easy electrical connection and optimization of parasitic parameters. The second electrical plate 2622 serves as a negative plate, and its negative electrode pad 2622a is arranged on both sides; the positive plate and the negative plate need to be electrically isolated. Compared to the Figure 2aAmong the multiple chip capacitors shown, the layered capacitors can make full use of the space and save the assembly gap between the chip capacitors; when the overall size is the same, the layered capacitors can achieve a larger capacitance, so that the output voltage has better dynamic performance; or under the same first capacitance requirement, the layered capacitors can be realized in a smaller volume; therefore, the power density of the module can be improved.

[0143] Embodiment 2

[0144] Figure 3a The overall structure of this embodiment is shown; Figure 3b for Figure 3a The two-phase VRM module 10 of this embodiment includes a top component 1001 and an integrated substrate component 200A; the integrated substrate component 200A includes a main structure 2001, a top structural area 2002, a bottom structural area 2003, a signal electrical connector 251, and a PCB insulating dielectric material 280; compared with the first embodiment, the top component 1001 of this embodiment omits the top plate 110, and the function of the top plate 110 is realized by the top structural area 2002 in the integrated substrate component 200A (that is, the top component 1001 and the top structural area 2002 correspond to the top component 100 of the first embodiment in terms of function);

[0145] Figure 3c FIG. 2 is a side view of the integrated power converter module of this embodiment after the PCB insulating dielectric material 280 is hidden; FIG. Figure 3a to Figure 3c As shown, the main structure 2001 includes an inductor component 210, a capacitor component 260, and a plastic package 270 (corresponding to the middle component 200 of the first embodiment); the top structure area 2002 includes a first wiring layer 2002-1, a second wiring layer 2002-2, a third wiring layer 2002-3 and a fourth wiring layer 2002-4; the first wiring layer 2002-1 is electrically connected to the top electrode of the main structure 2001; the second wiring layer 2002-2 corresponds to the pin of the top component 1001, and is used for For electrically connecting the top component 1001; the third wiring layer 2002-3 and the fourth wiring layer 2002-4 are used as wiring between the first wiring layer 2002-1 and the second wiring layer 2002-2; the electrical connection between the wiring layers is usually achieved through interlayer electrical connection methods such as blind holes, buried holes and through holes (not shown in the figure); in some other embodiments, the top structure area 2002 can also be provided with a larger number of wiring layers for electrical connection, heat dissipation, electromagnetic shielding or other functions, which are only used as examples and not limited here.

[0146] The bottom structure area 2003 includes a first wiring layer 2003-1, a second wiring layer 2003-2, a third wiring layer 2003-3 and a fourth wiring layer 2003-4; the first wiring layer 2003-1 is electrically connected to the bottom electrode of the main structure 2001; the second wiring layer 2003-2 is used to electrically connect to the load. In a preferred embodiment, the second wiring layer 2003-2 is a dot-shaped pad of LGA or BGA used to electrically connect to the load; the third wiring layer 2003-3 and the fourth wiring layer 2003-4 are used as electrical connections between the first wiring layer 2003-1 and the second wiring layer 2003-2; the electrical connection between the wiring layers is usually achieved by blind holes, buried holes and through holes (not shown in the figure); in some other embodiments, the bottom structure area 2003 can also be provided with a larger number of wiring layers for electrical connection, heat dissipation, electromagnetic shielding or other functions, which are only used as examples and not limited here.

[0147] Since the top structure area 2002 is functionally equivalent to the top plate 110 of the first embodiment; and the bottom structure area 2003 is functionally equivalent to the bottom component 300 of the first embodiment, this embodiment is an integrated substrate assembly 200A obtained by integrating the middle component 200, the top plate 110 and the bottom component 300 of the first embodiment into a PCB through the PCB process; its purpose is to save the two weldings originally required between the middle component and the top component and the middle component and the bottom component, and only need to weld the top component 1001 and the integrated substrate assembly 200A once (corresponding to the welding performed on the upper surface of the top plate 110 in the first embodiment) to complete the module assembly, reducing two welding processes, greatly improving the integration, reducing the production cost and improving the reliability of the module. In a preferred embodiment, the PCB of the integrated substrate assembly 200A is also provided with a vertical electrical connector whose two ends are electrically connected to the top structure area 2002 and the bottom structure area 2003 respectively, and the vertical electrical connector can be used as an alternative implementation form of structures such as the signal electrical connector 251. The differences between this embodiment and the first embodiment can also be applied to the other preferred embodiments mentioned above, and will not be described in detail here.

[0148] In a preferred embodiment, Figure 3c The bonding and fixing between the inductor component 210 and the capacitor component 260 does not rely on the plastic package 270, but only relies on the adhesive between the two; therefore, the plastic package 270 can be removed.

[0149] In a preferred embodiment, if Figure 3d As shown ( Figure 3d The perspective direction and Figure 3cThe fourth side of the magnetic core 211 is plated with a metal layer 213, so that the metal layer 213 is located between the magnetic core and the signal electrical connector 251; and the metal layer 213 is electrically connected to the GND, VIN and other static potentials through the wiring layer 2002 or the wiring layer 2003; to shield the electric field interference of the rapidly changing voltage on the main winding input end 221a / 222a on the signal electrical connector 251, and also to shield the magnetic field interference of the diffuse magnetic field of the magnetic core 211 on the signal electrical connector 251, so as to ensure the reliable operation of the VRM module. The electroplated metal layer can also be completed by opening a window on the plastic packaging material 270 to achieve the same technical effect.

[0150] In another preferred embodiment, Figure 3e As shown ( Figure 3d The perspective direction and Figure 3c The second side and the fourth side of the insulating dielectric material are the same, and the insulating dielectric material 280 is not hidden. A metal layer 214 is provided on each of the second side and the fourth side of the insulating dielectric material by using a side electroplating process; and the metal layer 214 is electrically connected to the GND, VIN and other static potentials through the wiring layer 2002 or the wiring layer 2003. The proximity of the metal layer 214 to the inductor component greatly reduces the inductance of the loop parasitic inductance between the second side and the fourth side power electrical connector 231 / 241, or greatly reduces the inductance of the loop parasitic inductance between 232 / 242; as a result, the resonant impedance between the loop parasitic inductance and Cin is greatly reduced to the point where it can be damped by the parasitic resistance in the line, thereby greatly reducing the resonant current in Cin, reducing the impact of the resonance on the efficiency of the VRM module, and improving the efficiency.

[0151] Embodiment 3

[0152] Figure 4a The overall structure of this embodiment is shown; Figure 4b for Figure 4a The difference between this embodiment and the second embodiment is that the top component 1001 of this embodiment further includes a top plastic package 170, and the top plastic package 170 covers other parts of the top component 1001 and at least a part of the top surface of the integrated substrate component 200A; in this embodiment, after the components of the top component 1001 are welded on the top surface of the integrated substrate component 200A, they are then sealed with a plastic package material, and the entire VRM module has no welding points exposed to the outside, further improving the reliability of the module.

[0153] Embodiment 4

[0154] Figure 5a The overall structure of this embodiment is shown; Figure 5b for Figure 5a The structural breakdown diagram of Figure 5cIt is a structural exploded diagram of the middle component 200; the difference between this embodiment and the first embodiment is that in this embodiment, the second capacitor 130 of the first embodiment is removed from the top component 100, and the second capacitor component 290 is formed and then integrated into the middle component 200.

[0155] like Figure 5a and Figure 5b As shown, the top component 100 includes a top plate 110, an IPM unit 121 / 122, a control unit 123 and other passive components 140; the devices in the top component 100 can be selected as devices with lower height, such as chips using CSP packages (Chip Size Package) for the IPM unit 121 / 122 and the control unit 123; other passive components 140 also use integrated ultra-thin package devices, such as silicon capacitor devices, etc.; the maximum height of the device above the top plate 110 in the first embodiment is limited by the height of the second capacitor 130, and reducing its height will sacrifice its capacitance, so even if other devices are thinned, the extra space is not effectively utilized. However, this embodiment is not subject to this limitation; the thickness of the functional area of ​​the semiconductor device can be only less than 0.1mm, so the thickness of the non-functional area can be reduced by advanced packaging and semiconductor thinning and grinding processes to reduce the height occupied by the top component 100, improve its height utilization, and improve the power density of the VRM module; the thinning of the semiconductor chip thickness and the decrease in the overall height of the top component 100 can also reduce the thermal resistance of the device heat source to dissipate heat upward, which is conducive to heat dissipation.

[0156] like Figure 5c As shown, the integrated component 600 of this embodiment includes, in addition to the inductor component 210 and the first capacitor component 260, a second capacitor component 290; the first capacitor component 260 corresponds to Figure 1 The first capacitor 360; and the second capacitor component 290 corresponds to Figure 1 The second capacitors 1301 to 1313 have the function of filtering high-frequency ripples. The recessed area of ​​the second capacitor component 290 is connected to a side of the integrated component 600, so that more capacitors can be set, and the second capacitor component 290 can be set more conveniently by using the side connected to the side; similarly, the recessed area used to set the first capacitor component 260 also has the same structure, which will not be repeated here.

[0157] Figure 5d2 is a structural exploded view of the integrated component 600. The top and bottom of the magnetic core 211 each have a recessed portion, forming two capacitor setting areas for accommodating the second capacitor component 290 and the first capacitor component 260 respectively; the structure of the first capacitor component 260 has been described in the first embodiment and will not be repeated here. The structure of the second capacitor component 290 can adopt a structure similar to that of the first capacitor component 260. In this embodiment, the second capacitor component 290 includes a substrate 291 and a capacitor element 292, wherein the capacitor element 292 corresponds to Figure 1 The second capacitors 1301-1313 are shown; the substrate 291 has an insulating function, such as a ceramic substrate, and has two through holes 2911 / 2912 formed thereon; the positions of the through holes 2911 / 2912 correspond to the positions of the main windings 221 / 222, and the main windings 221 / 222 pass through them. It should be noted that Figure 1 The Cin shown is not short-circuited with the input end of the two-phase inductor 200, so the electrode of the second capacitor component 290 needs to be electrically isolated from the input end of the main winding 221 / 222. For the structure and implementation of the second capacitor component 290, those skilled in the art can refer to the relevant description of the first capacitor component 260 in the first embodiment as an example, and implement it according to actual needs, which will not be repeated here.

[0158] The second capacitor assembly 290 is located below the top assembly 100, so it has a larger area to place the capacitor, so that a larger total capacitance can be obtained at the same height, or the height of the capacitor assembly can be reduced under the premise of the same total capacitance. Therefore, this arrangement can reduce the overall height of the module to improve the power density, or give the height dimension to the magnetic core 211 to reduce the loss of the magnetic core 211 to improve the efficiency of the module. On the other hand, since the capacitor element 292 can be vertically connected to the VIN Pad and GND Pad of the IPM unit 121 / 122 through the top plate 110, compared with the horizontally adjacent arrangement, the vertically connected electrical connection path is shorter, the high-frequency loop area between the capacitor element 292 and the IPM unit 121 / 122 is smaller, and the parasitic inductance is correspondingly smaller, so the loss caused by the high-frequency switching ripple current when the IPM unit 121 / 122 is working is smaller, which is conducive to improving efficiency. Similar to the electrode electrical network of the first capacitor component 260 that satisfies the alternating arrangement of the Vo terminal 160 and the GND terminal 150, the electrode electrical network of the second capacitor component 290 also satisfies the alternating arrangement of the Vin terminal 170 and the GND terminal 150, thereby further reducing the parasitic inductance of the loop between the capacitor element 292 and the IPM unit 121 / 122, reducing the loss generated when the IPM unit 121 / 122 operates at high-frequency switching, and further improving efficiency.

[0159] Embodiment 5

[0160] Figure 6a The overall structure of this embodiment is shown; Figure 6b for Figure 6a The structural breakdown diagram of Figure 6c It is a structural decomposition diagram of the main structure 2001. The two-phase VRM module 10 of this embodiment includes a top component 1001 and an integrated substrate component 200A; this embodiment is equivalent to a combination of the fourth embodiment and the second embodiment. The recessed area of ​​the second capacitor component 290 is connected to the two opposite sides of the integrated component 600, so that more capacitors can be set, and the two sides connected to the side can be used to more conveniently set the second capacitor component 290; similarly, the recessed area used to set the first capacitor component 260 also has the same structure, which will not be repeated here.

[0161] Figure 6d FIG. 2 is a side view of the integrated power converter module of this embodiment after the PCB insulating dielectric material 280 is hidden. Figures 6a to 6d As shown, the main structure 2001 includes an integrated component 600 (including an inductor component 210, a first capacitor component 260 and a second capacitor component 290) and a plastic package 270 (the main structure 2001 corresponds to the middle component 200 of the fourth embodiment); the top structure area 2002 includes a first wiring layer 2002-1, a second wiring layer 2002-2, a third wiring layer 2002-3 and a fourth wiring layer 2002-4; the first wiring layer 2002-1 is electrically connected to the top electrode of the main structure 2001; the second wiring layer 2002-2 corresponds to the pin of the top component 1001, and is used to electrically connect the top component 1001; the third wiring layer 2002-3 and the fourth wiring layer 2002-4 are used as electrical connections between the first wiring layer 2002-1 and the second wiring layer 2002-2.

[0162] The bottom structure area 2003 includes a first wiring layer 2003-1, a second wiring layer 2003-2, a third wiring layer 2003-3 and a fourth wiring layer 2003-4; the first wiring layer 2003-1 is electrically connected to the bottom electrode of the main structure 2001; the second wiring layer 2003-2 is used to be electrically connected to the load, and in a preferred embodiment, the second wiring layer 2003-2 is a dot-shaped pad of LGA or BGA for electrically connecting to the load; the third wiring layer 2003-3 and the fourth wiring layer 2003-4 are used as electrical connections between the first wiring layer 2003-1 and the second wiring layer 2003-2.

[0163] Since the top structure area 2002 is functionally equivalent to the top plate 110 of the fourth embodiment, and the bottom structure area 2003 is functionally equivalent to the bottom component 300 of the fourth embodiment, the present embodiment is an integrated substrate component 200A obtained by integrating the middle component 200, the top plate 110 and the bottom component 300 of the fourth embodiment into a PCB through the PCB process; compared with the fourth embodiment, the present embodiment reduces two welding processes, greatly improves the integration, reduces the production cost and improves the reliability of the module.

[0164] In a preferred embodiment, Figure 6d The bonding and fixing between the middle inductor component 210 and the first capacitor component 260 and the second capacitor component 290 may not rely on the plastic package 270, but only rely on the adhesive between the two adjacent components; therefore, the plastic package 270 may be removed.

[0165] The fourth embodiment can also be combined with the third embodiment to form a better embodiment, that is, based on the present embodiment, the components of the top component 1001 are plastic-encapsulated to improve the reliability of the module.

[0166] Embodiment 6

[0167] Figure 7a The overall structure of this embodiment is shown; Figure 7b for Figure 7a The structural decomposition diagram of Figure 7a and Figure 7b As shown, the two-phase VRM module 10 of this embodiment includes a top component 100, a middle component 200 and a bottom component 300. Compared with the first embodiment, this embodiment is equivalent to removing the first capacitor component 260 from the middle component 200, extending a portion of the conductive structure in the middle component 200, and incorporating the removed and extended portion into the bottom component 300. Figure 7c FIG. 3 is a structural exploded view of the bottom assembly 300 of this embodiment; Figure 7cAs shown, the bottom component 300 includes a bottom substrate 310, metal conductive paths 331 / 332 / 341 / 342 / 351, a capacitor element 362 and a plastic package 370; the first power connector 231 / 232, the second power connector 241 / 242 and the signal connector 251 are electrically connected to the load through the bottom substrate 310 and the corresponding metal conductive paths 331 / 332 / 341 / 342 / 351, respectively; here, the first power connector 231 / 232 is electrically connected to the metal conductive paths 331 / 332, respectively, the second power connector 241 / 242 is electrically connected to the metal conductive paths 341 / 342, respectively, and the signal connector 251 is electrically connected to the metal conductive path 351. Preferably, the first power connector 231 / 232, the second power connector 241 / 242 and the signal connector 251 are routed through the bottom substrate 310, so that the arrangement of the metal conductive paths 331 / 332 / 341 / 342 / 351 and the pin electrical network on the bottom surface of the bottom component 300 meet the one-to-one correspondence in position; thus, the metal conductive paths 331 / 332 / 341 / 342 / 351 can be electrically connected to the pins on the bottom surface of the bottom component 300 only by electroplating, etching and laser drilling technology on the surface of the plastic package 370. In a preferred embodiment, the metal conductive paths 351 can be replaced by electroplating on the side of the plastic package that electrically connects the upper and lower surfaces of the bottom component 300.

[0168] In this embodiment, the output end of the main winding 221 / 222 is equipotential with one electrode of the capacitor element 362, so there is no need to extend through a metal conductive path, but through the wiring in the bottom substrate 310, the electrical network of the partial or all pads on the lower surface of the bottom substrate and the electrical network of the partial or all pads on the lower surface of the bottom component 300 meet the one-to-one correspondence relationship of the upper and lower positions. The output end of the main winding 221 / 222 is electrically connected to the load through the bottom substrate 310 and the corresponding electrode of the capacitor element 362; the specific implementation method is: first, the capacitor element 362 is welded to the lower surface of the bottom substrate 310; second, the capacitor electrode is electrically connected to the pin on the lower surface of the bottom component 300 by electroplating, etching and laser drilling technology on the surface of the plastic package 370. The output end 221 / 222 of the main winding of the middle component is connected to the load through the bottom substrate 310 and the electrodes of the capacitor element 362, so that the lower surface space of the bottom substrate 310 is not occupied, so that the lower surface of the bottom substrate 310 has a larger area for setting the capacitor element 362, which further improves the dynamic performance of the output voltage of the VRM module 10. Similar to the output end 221 / 222 of the main winding relying on the wiring of the bottom substrate 310, the second power connector 241 / 242 can also rely on the wiring of the bottom substrate 310, so that the second power connector 241 / 242 is electrically connected to the load through the bottom substrate 310 and the corresponding electrodes of the capacitor element 362; thereby, the area of ​​the metal conductive path 341 / 342 can be greatly reduced, so that the capacitor element 362 can occupy a larger space. In short, through the wiring layer located between the middle component 200 and the capacitor element 362, that is, the bottom substrate 310, the area for placing the capacitor element 362 is greatly increased.

[0169] In a preferred embodiment, if Figure 7d As shown, the bottom surface of the bottom substrate 310 can be plastic-encapsulated to form a plastic encapsulation body 370, and a window can be opened on the bottom surface of the plastic encapsulation body 370 to expose the electrode, and solderability treatment can be performed or BGA package pins can be made by ball planting; the plastic encapsulation body 370 can protect the welding points between the bottom substrate 310 and the capacitor element 362, and the metal conductive paths 331 / 332 / 341 / 342 / 351 to improve the reliability of the module.

[0170] In a preferred embodiment, after the top component 100, the middle component 200, and the bottom component 300 are welded, they are together formed into a double-sided plastic packaging body through a double-sided plastic packaging process, so that all welding points can be hidden, thereby further improving reliability.

[0171] In a preferred embodiment, the capacitor element 362 and the metal conductive paths 331 / 332 / 341 / 342 / 351 may also be disposed in the bottom substrate 310 by a PCB embedding process to improve the reliability of the module.

[0172] Embodiment 7

[0173] Figure 8a The overall structure of this embodiment is shown; Figure 8b for Figure 8a The structural breakdown diagram of Figure 8c is a side view of the integrated power converter module of this embodiment after the plastic-encapsulated insulating dielectric material 280 is hidden; Figure 8d The overall structure of the main structure 2001 of this embodiment is shown. Figures 8a to 8d As shown, the two-phase VRM module 10 of this embodiment includes a top assembly 1001 and an integrated substrate assembly 200A. The top assembly 1001 of this embodiment is the same as that of the second embodiment; the integrated substrate assembly 200A includes a top plate 110, a main structure 200B, a signal electrical connector 251, and a plastic packaging material 280. Figure 8d The main structure 200B shown in the figure further comprises an inductor component 210, a bottom substrate 310, metal conductive paths 331 / 332 / 341 / 342 (wherein 332 and 342 are not shown), and a capacitor element 362. The inductor component 210 is welded on the upper surface of the bottom substrate component 310, and the metal conductive paths 331 / 332 / 341 / 342 and the capacitor element 362 are welded on the lower surface of the bottom substrate component 310. Figure 8d The main structure 200B is further welded to the lower surface of the top plate 110, and then the lower surface of the top plate 110 and its parts, that is, the main structure 200B, are plastic-sealed; then, the side of the plastic seal is electroplated to form a signal electrical connector connecting the top component 1001 and the load mainboard; a window is opened on the lower surface of the plastic seal, and electroplating is performed to form the pins on the lower surface of the substrate component 200A. The specific effect is as follows Figure 8c As shown. The wiring in the bottom substrate 310 makes the electrical network of the partial or all pads on the bottom surface of the bottom substrate and the electrical network of the partial or all pads on the bottom surface of the integrated substrate assembly 200A meet the one-to-one correspondence relationship of the upper and lower positions. The area of ​​the metal conductive path on the bottom surface of the bottom substrate 310 is greatly reduced, and the area of ​​the capacitor element 362 is greatly increased. And the integrated substrate assembly 200A can be manufactured by only welding, plastic sealing and electroplating processes, with simple processes and low production costs. The metal conductive path shown in this embodiment can also be a metal column of other conductive materials.

[0174] Embodiment 8

[0175] The power converter module using TLVR (Trans-inductor voltage regulator) technology can further improve its dynamic performance. TLVR technology is to make multi-phase inductors that originally have no magnetic coupling relationship have a magnetic coupling relationship with each other through auxiliary windings; after multiple two-phase BUCK step-down modules adopt TLVR technology, they can achieve the equivalent effect of multi-phase coupling; multi-phase coupled inductors can achieve smaller dynamic inductance to improve the dynamic performance of multi-phase Buck step-down modules; at the same time, multi-phase coupled inductors can maintain a larger steady-state inductance to improve the efficiency of the module; Fig. 9 It is the circuit schematic diagram of TLVR technology; Fig. 9 As shown, if several two-phase VRM modules are used to implement the function of a multi-phase VRM module, the two-phase inductance in the first two-phase VRM module includes a main winding L1 and a main winding L2, and so on, the two-phase inductance in the N / 2-th two-phase VRM module includes a main winding L(N-1) and a main winding LN; when the auxiliary windings L10...LN0 are not set, the N-phase inductances formed by the main windings L1...LN are not magnetically coupled to each other. Auxiliary windings L10 and L20 are set in the first two-phase VRM module, and so on, auxiliary windings L(N-1)0 and LN0 are set in the N / 2th two-phase VRM module; the auxiliary windings L10...LN0 are set in a positive coupling manner with the corresponding main windings L1...LN; the terminals of the auxiliary windings L10...LN0 that are the same as the input terminals of the main windings L1...LN are marked as point terminals, and the terminals of the auxiliary windings L10...LN0 that are the same as the output terminals of the main windings L1...LN are marked as non-point terminals. All auxiliary windings are connected in series in sequence, with the point end of the previous auxiliary winding connected in series with the non-point end of the next auxiliary winding, and a compensation inductor Le is externally connected; and the PWM signal of the N-phase BUCK step-down circuit composed of N / 2 VRMs is set in a phase-shifted manner of (360 / N) degrees; at this time, the N-phase main windings L1...LN, which originally had no coupling relationship with each other, are coupled through the auxiliary windings L10...LN0 and the compensation inductor. This embodiment takes a two-phase VRM module 10 as an example to illustrate the combination of TLVR technology and the technical solution of the present invention.

[0176] Fig.10a shows the overall structure of the integrated power converter module of this embodiment, Fig.10b for Fig.10a The structural decomposition diagram of Fig.10a and Fig.10bAs shown, the two-phase VRM module 10 of this embodiment includes a top component 100, an integrated component 600 (the integrated component 600 of this embodiment can directly form a middle component) and a bottom component 300; the top component includes a top plate 110, an IPM unit 121 / 122, a second capacitor 130 and other passive components 140; the IPM unit 121 / 122 is arranged at a position close to the first side of the top plate 110; the signal pins of the IPM unit 121 / 122 are arranged in a direction opposite to the first side, that is, in a position toward the third side; the other passive components 140 are mainly components of the control signal loop of the IPM unit, and therefore are arranged adjacent to the signal pins of the IPM unit 121 / 122, and the second capacitor 130 is arranged at a position between the two IPMs on the top plate 110 and at the rest of the top surface.

[0177] Fig.10c is a schematic diagram of the structure of the integrated component 600 viewed from the bottom (i.e., relative to Fig.10b , Fig.10c The up-down and left-back-right-front directions are reversed, while the right-back-left-front direction remains unchanged. Figure 10d to Figure 10g Similarly); Fig.10d yes Fig.10c The structural decomposition diagram of Fig.10c and 10d As shown, the integrated component 600 includes an inductor component 210 and a first capacitor component 260 .

[0178] The inductor assembly 210 includes a magnetic core 211, a main winding 221 / 222, an auxiliary winding 223 / 224, a first power electrical connector 231, a second power electrical connector 241 / 242 and a signal electrical connector 251; wherein the main winding 221 and the auxiliary winding 223 are arranged together, respectively forming a first main winding and a first auxiliary winding, and the main winding 222 and the auxiliary winding 224 are arranged together, respectively forming a second main winding and a second auxiliary winding. An insulating material area is arranged between the main winding 221 / 222 and the corresponding auxiliary winding 223 / 224, and the insulating material area is used to achieve electrical isolation while improving the coupling coefficient between the main winding 221 / 222 and the corresponding auxiliary winding 223 / 224.

[0179] The main winding 221 / 222 has a transverse winding section and is in a "Z"-shaped structure. One end of the "Z"-shaped structure extends toward the top surface of the magnetic core 211 and forms a pin 221a / 222a on the top surface. The pin 221a / 222a and the SW of the IPM unit 121 / 122 electrically connected thereto are connected to each other. The positions of the pads correspond vertically; the other end of the "Z" shape extends toward the bottom surface of the magnetic core 211, and forms pins 221b / 222b on the bottom surface, and the pins 221b / 222b are connected to the load through the bottom component 300 to provide energy for the load; the auxiliary winding 223 / 224 is in a "Π" shape, and both ends thereof extend toward the bottom surface of the magnetic core 211, and form pins 223a / 223b / 224a / 224b on the bottom surface; the pins 223a / 223b / 224a / 224b are electrically connected to the bottom pins of the two-phase VRM module 10 through the bottom component 300, and then the series connection of the auxiliary windings of the multiple two-phase VRM modules 10 is realized through the circuit structure arranged outside the present embodiment to form a TLVR loop, so as to realize the following Fig. 9 The function shown; in a preferred embodiment, the circuit structure arranged outside the present embodiment can be a third component base plate, which is convenient for the expansion of any number of two-phase modules. Those skilled in the art can set the compensation inductor Le and other structures in the third component base plate according to actual needs; the structure of the present embodiment omits the electrical connection structure between the auxiliary windings 223 / 224 inside the module; the connection structure is usually completed in the bottom component 300.

[0180] The magnetic core 211 has a first side surface to a fourth side surface that are adjacent to each other in sequence and correspond to the first side edge to the fourth side edge of the top plate 110. The first power electrical connector 231 is arranged on the first side surface and is located between the pin 221a and the pin 222a; the second power electrical connector 241 / 242 is arranged on the second side surface and the fourth side surface respectively and is close to one side of the first side surface; the pin 221b / 222b is arranged on the third side surface, and the signal electrical connector 251 is arranged on the remaining positions of the second side surface, the third side surface and the fourth side surface; since the pin 221b / 222b corresponds to the inductor output end, its potential is relatively static compared to the inductor input end, so the easily interfered The analog signal electrical connector 251-1 is arranged on the third side adjacent to the pin 221b / 222b to filter out the electromagnetic field interference generated by the rapidly changing voltage; in order to maintain the strong coupling between the main winding 221 / 222 and the corresponding auxiliary winding 223 / 224, the distance between the pin 221b / 222b and the corresponding pin 223b / 224b is very close, so the corner of the pin 221b / 222b close to the corresponding pin 223b / 224b is chamfered or notched to avoid the risk of short circuit that may occur during welding.

[0181] The bottom of the magnetic core 211 has a recessed area, which is the capacitor setting area 212 for placing the first capacitor component 260. The first capacitor component 260 includes a plurality of chip capacitors arranged in an array. The chip capacitors can be glued in the capacitor setting area 212, or directly welded to the bottom component 300, or integrated by the plastic packaging process, PCB embedding process, etc. in the aforementioned embodiments. In a preferred embodiment, this embodiment and embodiment 2 can be combined to reduce the exposure of welding points and improve reliability.

[0182] In a preferred embodiment, if Fig.10e As shown, the integrated component 600 may have another structure. Fig.10f yes Fig.10e The difference of this structure lies in the relative position of the auxiliary winding 223 / 224 and the main winding 221 / 222. Fig.10e and 10f As shown, the auxiliary winding 223 / 224 and the corresponding main winding 221 / 222 are arranged in a vertical stack; the positions of the pins 223a / 223b / 224a / 224b are also adjusted accordingly, forming a colinear position relationship with the pins 221b / 222b on the bottom surface of the magnetic core 211; since the auxiliary winding 223 / 224 does not occupy the horizontal area of ​​the magnetic core 211, the main winding 221 / 222, the first power electrical connector 231 or the second power electrical connector 241 can adopt a wider width to reduce its DC impedance and improve efficiency.

[0183] In a preferred embodiment, if Figure 10g As shown, integrated assembly 600 may have another structure. Fig.10h yes Figure 10g The structural decomposition diagram of the embodiment. The difference of this structure is that the first capacitor component 260 is an integrated packaged capacitor component using LGA or BGA pins, such as a silicon capacitor (the coplanarity of the bottom pins of the first capacitor component 260 and the bottom pins of the inductor component 210 does not consider the height of the soldered balls). This capacitor has the characteristics of thin thickness and high capacitance density, which can save the depth of the capacitor setting area 212, thereby reducing the height of the magnetic core 211 and improving the current density of the VRM module. Furthermore, the pin polarity of the integrated packaged capacitor component disclosed in this embodiment satisfies the positive and negative staggered arrangement, so that the parasitic inductance of the loop between the integrated packaged capacitor and the load is minimized.

[0184] Although the module structure and implementation method of Examples 1 to 8 are described using a two-phase VRM module 10 as an example, the technical solution of the present invention is not limited to a two-phase VRM module; in some other embodiments, the same concept can be applied to other multi-phase VRM modules, as well as other power conversion modules and power supply products, and those skilled in the art can derive the corresponding structure by analogy.

[0185] Embodiment 9

[0186] Fig.11 This is another schematic diagram of a power supply solution consisting of N VRM modules. The inductor of the VRM module is a two-phase inductor using TLVR technology. Fig.11 As shown, 210A is a two-phase inductor using TLVR technology, and N two-phase inductors 210A using TLVR technology constitute the inductor of the 2N-phase VRM module. After the two-phase inductors in the two-phase inductor 210A using TLVR technology realize the TLVR technology through the auxiliary winding, there is a coupling relationship between the two-phase main windings. When the two PWM phases in the two-phase TLVR 210A differ by 180 degrees, the two-phase inductor works in an anti-coupling state. The anti-coupling inductor enables the VRM module to have a lower dynamic inductance to improve the dynamic performance of the output voltage, and at the same time has a higher steady-state inductance to improve the efficiency of the VRM module.

[0187] The advantage of the power supply scheme of multiple two-phase inductors using TLVR technology to form a multi-phase VRM inductor is that the two auxiliary windings of each two-phase inductor are only connected in series near the outside of the inductor core or only connected in series inside the inductor core; after the two auxiliary windings are connected in series, the induced voltage on the winding pin is much lower than Fig. 9 The induced voltage on the winding pins after multiple auxiliary windings are connected in series is shown; the pin voltage amplitude of the two-phase VRM module 10 can be limited, and the risk of high-voltage breakdown of the circuit surrounding the pin is greatly reduced; at the same time, the placement of multiple VRM modules formed by multiple two-phase inductors using TLVR technology on the load motherboard is more flexible and is not limited by the auxiliary windings.

[0188] Fig.12a The two-phase VRM module 10 of this embodiment is shown. Figure 12b yes Fig.12a The structural decomposition diagram of Fig.12a and 12b As shown, the overall structure is Fig.10a The two-phase VRM module 10 in the embodiment is the same and will not be described again here; Fig.12c is a structural exploded view of the middle component 200; Fig.12cAs shown, the second pins of the two main windings 221 and 222 in this embodiment are both arranged in the middle of the bottom surface of the magnetic core; the two auxiliary windings 223 and 224 are connected in series through the bottom component 300, specifically 223b and 224a are short-circuited to form short-circuit line 1, and 224b and 223a are short-circuited to form short-circuit line 2, so as to realize the two-phase TLVR technology; the purpose of this arrangement is to shorten the distance between the second pin and the load, improve efficiency; and eliminate the need for auxiliary winding routing on the load motherboard, saving wiring space for the motherboard. However, the problem with this embodiment is that the two short-circuit lines of the two auxiliary windings cross, making the paths of short-circuit line 1 and short-circuit line 2 long, and the arrangement on the bottom component 300 is complicated. The first capacitor combination 260 of this embodiment is arranged in the bottom component 300 (the specific arrangement method can refer to Example 6, Figures 12a to 12c In some other embodiments, the first capacitor component may also be disposed in the middle component, or disposed outside the two-phase VRM module 10.

[0189] Embodiment 10

[0190] Fig.13a The two-phase VRM module 10 of this embodiment is shown. Fig.13b yes Fig.13a The structural breakdown diagram of Fig.13c is a structural exploded view of the middle component 200; this embodiment is similar to Fig.12a The implementation has the same technical effect. Fig.12a The differences of the embodiments are the layout of IPM 121 and IPM 122, the arrangement of the windings and the arrangement of the signal PINs; in this embodiment, the SW pin of IPM 121 and the SW pin of IPM 122 are respectively arranged on two opposite sides of the top plate 110, and the second capacitor is located between IPM 121 and IPM 122; and the first pin 221a of the first winding is arranged on the first side surface close to the magnetic core; the first pin 222a of the second winding is arranged on the third side surface close to the magnetic core; and the second pins of the first winding and the second winding are both arranged in the middle of the bottom surface of the magnetic core; as shown in FIG. Fig.13c As shown, the auxiliary winding 223 and the auxiliary winding 224 are connected in series through 225 and 226 inside the magnetic core 211; the auxiliary winding extends outward and forms pins 225a and 226a on the surface of the magnetic core; the auxiliary windings in this embodiment are connected in series inside the magnetic core, which simplifies the wiring of the bottom components; the four windings inside the magnetic core become three windings, and the production of the inductor is also simpler; the auxiliary windings 225 and 226 will introduce an inductance corresponding to Fig.11The leakage inductances Lk1 and Lk2 in the circuit can be adjusted by adjusting the widths W1 and W2 of the auxiliary windings 225 and 226 to adjust the coupling coefficient between the auxiliary winding and the main winding, so as to achieve the adjustment of the dynamic inductance of the two-phase TLVR to meet the different dynamic inductance requirements of different application scenarios.

[0191] Furthermore, because the area reserved for the integrated power converter module (hereinafter referred to as the module) by the smart card mainboard is getting smaller and smaller, the requirements for the output current density per unit area of ​​the integrated power converter module are getting higher and higher. The present invention proposes a structure and implementation scheme that maximizes the power supply current density per unit area. Compared with the traditional structure, the density of the power supply current per unit area of ​​the integrated power converter module can be increased by 2 times or more. In the above-mentioned embodiments 1 to 4 and 6 to 10, the second capacitor Cin and the IPM units 121 and 122 are arranged on the top surface of the top plate 110. Due to the progress of magnetic materials, the shape plasticity of the magnetic materials is enhanced, and the area of ​​the inductor can be further reduced. Therefore, the area of ​​the IPM unit and the second capacitor Cin becomes the bottleneck for further optimization of the area of ​​the integrated power converter module. On the top surface of the integrated power converter module, 60% of the area is occupied by the IPM unit (2*6mm*4mm). The actual effective area in the IPM unit is the silicon wafer (about 3mm*5mm), and its effective functional thickness is less than 0.1mm, but it occupies nearly 1mm of height in vain, which is equivalent to most of the IPM area being wasted. The present invention places the second capacitor Cin on the bottom side of the top plate 110, as shown in the fifth embodiment. Although the structure is simply moved, the purpose of reducing the area of ​​the integrated power converter module is achieved, but it brings great challenges to the design and implementation of the integrated power converter module. The present invention accurately grasps the essence of the problem, proposes a trend solution and solves the challenges of details, and provides a variety of options suitable for different process scenarios.

[0192] In addition, the present invention also discloses embodiments 11 to 14, in which the IPM units 121 and 122 are placed above the bottom surface of the top plate 110, that is, the IPM units 121 and 122 can be arranged on the top surface of the top plate 110, or can be buried inside the top plate 110. The second capacitor Cin is arranged below the IPM units 121 and 122, and can be arranged between the bottom surface of the top plate 110 and the inductor assembly 210, or can be buried inside the top plate 110, and is electrically connected to the IPM units 121 and 122 to obtain a minimum loop and a minimum area of ​​the integrated power converter module. If the second capacitor Cin is arranged between the bottom surface of the top plate 110 and the magnetic core 211, and is only fixed by welding without a special fixing method, the welding process during the module assembly process or the customer application process will cause the solder joints of the second capacitor Cin to remelt, causing the components in the bottom surface of the top plate 110 to fall off or shift, thereby reducing the reliability of the module.

[0193] Embodiment 11

[0194] exist Figures 14a to 14g In the illustrated embodiment, the second capacitor Cin is disposed on the inductor component 210 and is sealed and fixed together with the inductor component 210. Fig.14a As shown in the example, the integrated component 600 includes an inductor component 210, a second capacitor component 292, an external electrode 294 and a plastic package 270. The second capacitor component 292 and the external electrode 294 are arranged on the top surface of the inductor component 210, and the external electrode 294 is arranged adjacent to the side of the module, and the external electrode 294 is electrically connected to the winding of the inductor component 210; the inductor component 210, the second capacitor component 292 and the external electrode 294 are fixed together by plastic packaging to form a plastic package 270, and the surface of the plastic package 270 is polished to expose the electrode 293 and the external electrode 294 of the second capacitor, and the pads are formed by electroplating, and the inductor component 210 is fixed and electrically connected to the top plate 110 through these pads. Figure 14b to Figure 14c The middle inductor component 210, the second capacitor component 292 and the external electrode 294 are all made of Fig.14a The structure and process shown in the figure, the integrated power converter module using this structure, its area is reduced from the original 10mm*9mm=90mm2 to 9mm*7mm=63mm2, the area is reduced by more than 30%, and the power that the AI ​​smart card of this embodiment can process is increased by more than 30%, so that the computing power of the AI ​​smart card of the same area is increased by more than 20%, making the economic benefits of a single AI smart card as high as more than 10,000 yuan. .

[0195] like Fig.14aAs shown, the IPM unit 121 / 122 is welded on the top surface of the top plate 110 after conventional pre-packaging, and the manufacturing process is simple; a connector is set on the side of the inductor component 210, and the connector covers part of the top surface, part of the bottom surface and part of one side surface of the magnetic core 211, so as to realize the electrical connection between the top plate 110 and the bottom substrate 310, and realize the electrical connection between the power electrode and the signal electrode of the IPM unit and the external welding pad on the bottom surface of the module; the thickness of the inductor component 210 is 6mm, the thickness of the top plate 110 and the bottom substrate 310 are both 0.6mm, the thickness of the second capacitor component 292 and the plastic packaging layer 270 is 0.6mm, and the overall thickness of the IPM unit 121 / 122 and its package is 0.2mm, so the thickness of the entire module is 8mm.

[0196] like Fig.14b As shown, the IPM unit 121 / 122 uses a bare chip, which is placed on the top surface of the top plate 110 together with the external electrode 294, and then is sealed together with the top plate 110 to form the top assembly 100. The bare chip has a smaller area size (for example, 3mm*5mm), because the package of the IPM unit 121 / 122 is removed, so the area of ​​the VRM module is 6mm*7mm=42mm 2 The area of ​​the VRM module is reduced by more than 53%, thereby increasing the space utilization of the smart card mainboard; further, the plastic package body 270 can be thinned after plastic packaging, and then electroplating is performed on the surface of the plastic package body 270 to protect the bare chip while increasing the heat dissipation capacity of the module; the thickness of the module of this embodiment is Fig.14a The modules shown have the same thickness.

[0197] like Fig.14c As shown, the bare chip of the IPM unit 121 / 122 is buried in the top plate 110, and the area of ​​the module is Fig.14b The schemes shown are the same, and the thickness of the module is reduced by the thickness of the IPM unit (ie, 0.2 mm) compared with FIG. 14A and FIG. 14B .

[0198] When the thickness of the inductor component in the integrated power converter module is less than 3 mm, such as Fig.14d As shown, the winding 221 / 222 of the inductor component 210 is Z-shaped, and the horizontal part of the inductor winding 221 / 222 can ensure sufficient inductance. One end of the inductor winding protrudes from the top surface of the inductor component 210, and the second capacitor component 292 is plastic-sealed together with the inductor component 210 to form a plastic-sealed body 270; then the plastic-sealed body is polished to expose the end surface of the inductor winding and the second capacitor electrode, and a pad is formed by electroplating and welded to the top plate 110 and electrically connected. Figures 14a to 14cCompared with the scheme shown in the figure, the external electrode 294 is reduced, and the protruding end of the inductor winding is used to realize the electrical connection between the inductor winding 221 / 222 and the top plate 110 and the IPM unit 121 / 122. In order to increase the current density of the module, a four-phase buck circuit can be connected in parallel, and four bare chips of IPM units are arranged in an area of ​​10mm*9mm to increase the output current capacity of the module; the external pads on the bottom of the module can also be the same as the aforementioned 10mm*9mm solution, so that the external pads of the two technical solutions are compatible, reducing the number of production test fixtures. Fig.14e for Fig.14d The top view includes projections 121a / 122a / 121b / 122b of four IPM units on the top surface, and projections 221a / 222a / / 221b / 222b of the end surfaces of four inductor windings on the top surface, wherein the projection 121a / 122a of the IPM unit is arranged between the projections 221a / 222a of the inductor winding, and the projection 121b / 122b of the IPM unit is arranged between the projections 221b / 222b of the inductor winding.

[0199] When the thickness of the inductor component in the integrated power converter module exceeds 4 mm, the inductor winding can adopt an "I"-shaped metal conductive path, such as Fig.14f As shown, the inductor winding 221 / 222 is arranged perpendicular to the top plate 110 and the bottom substrate 310, and the projection of the inductor winding on the top surface of the top plate 110 is arranged within the projection of the corresponding IPM unit on the top surface of the top plate 110, thereby reducing the path through which the current flows and reducing the loss on the inductor winding. One end of the inductor winding protrudes from the top surface of the inductor component 210, and the second capacitor component 292 is plastic-sealed together with the inductor component 210 to form a plastic-sealed body 270; then the plastic-sealed body is polished to expose the end face of the inductor winding and the second capacitor electrode, and a pad is formed by electroplating and welded to the top plate 110 and electrically connected. The module can also adopt a four-phase step-down circuit in parallel solution, and four bare chips of IPM units are arranged in an area of ​​10mm*9mm to increase the output current capacity of the module; Figure 14g Shown Fig.14f The top view includes projections 121a / 122a / 121b / 122b of four IPM units on the top surface of the top plate 110, and projections 221a / 222a / / 221b / 222b of the end surfaces of four inductor windings on the top surface of the top plate 110, wherein the projections 221a / 222a / 221b / 222b of the end surfaces of the inductor windings are respectively within the projections 121a / 122a / 121b / 122b of the IPM units. The second capacitor Cin is arranged around the end surfaces of the inductor windings 221 / 222.

[0200] Embodiment 12

[0201] This embodiment proposes an implementation method of arranging the second capacitor assembly 292 below the top plate 110, that is, arranging the second capacitor assembly 292 below the IPM unit 121 or 122. The specific implementation method is as follows: Figures 15a to 15d As shown. Fig.15a In the first embodiment shown, the top assembly 100 includes a top plate 110, IPM units 121 and 122, a second capacitor assembly 292, a power column pin 180 and a plastic package 270. The IPM units 121 and 122 are arranged on the top surface of the top plate 110, the second capacitor assembly 292 and the power column pin 180 are arranged on the bottom surface of the top plate 110 by welding, and the two power column pins 180 are respectively arranged on both sides of the second capacitor assembly 292 for electrical connection with the input end of the inductor assembly 210. The top plate 110, the IPM units 121 and 122, the second capacitor assembly 292, the power column pin 180 and the plastic package are plastic packaged together to form a plastic package 270. The layout disclosed in this embodiment not only reduces the cross-sectional area of ​​the module, but also does not affect the connection between the top plate 110 and the inductor assembly 210; and when the second capacitor Cin is heated again and the solder joint is remelted, the second capacitor Cin will not fall or shift, and the reliability of the module will not be affected. In this embodiment, the IPM units 121 and 122 may also be embedded in the top plate 110. Fig.15b shown.

[0202] Fig.15b The second embodiment shown is Fig.15a Another difference of the embodiment 1 shown is that the top assembly 100 does not include the power column pin 180. After the top plate 110 and the second capacitor assembly 292 are plastic-sealed together, a plastic-sealed body 270 is formed. Then, holes are punched and electroplated on both sides of the second capacitor assembly 292, and the electrodes are led to the surface of the plastic-sealed layer to form power electroplated pins 181. Even the wiring is re-wired on the surface of the plastic-sealed layer to improve the compatibility of the pins. In the above-mentioned embodiments 1 and 2, because the second capacitor is set on the bottom surface of the top plate 110 and is reinforced by plastic sealing, no matter whether the IPM units 121 and 122 are set on the top surface of the top plate 110 or buried inside the top plate 110, the thickness of the IPM unit can be reduced as much as possible while meeting the electrical requirements, without worrying about its structural strength, so that the space utilization rate is maximized.

[0203] The top assembly structure disclosed in this embodiment is implemented as follows: Fig.15c As shown, the second capacitor component 292 is embedded in the top plate 110 and electrically connected to the IPM unit through a punching electroplating process. In this implementation, since the second capacitor has no solder joints, high-temperature remelting will not occur, thus avoiding the resulting production reliability issues.

[0204] The implementation method of the top component structure disclosed in this embodiment is as follows: Fig.15d As shown, the second capacitor assembly 292 and the power column pin 180 are fixed to the bottom surface of the top plate 110 by welding, and the underfill 182 is filled between the second capacitor Cin and the top plate 110. Even if the second capacitor Cin is remelted at high temperature, it will not fall or shift, thereby affecting the reliability of the module. In addition, because the underfill 182 has good fluidity and strong bonding with the capacitor, it is not easy to form a capillary action, avoiding the short circuit caused by the solder bridge between the two electrodes after the solder joint is remelted at high temperature. In this embodiment, the thickness of the second capacitor assembly 292 and the plastic package 270 is 0.8mm.

[0205] Embodiment 13

[0206] In this embodiment, the second capacitor component 292 is disposed on the inductor component 210. Figures 16a to 16d shown. Fig.16a The integrated component 600 shown includes an inductor component 210, a second capacitor component 292 and a capacitor electrode 293. The second capacitor component 292 is arranged on the top surface of the inductor component 210, and then is plastic-sealed together with the inductor component 210 to form a plastic-sealed body 270. Then, the capacitor electrode 293 is led out by thinning the plastic-sealed layer or by laser drilling, and is electrically connected to the IPM unit through the capacitor electrode 293. There is no solder joint between the second capacitor Cin and the inductor component 210. Only by fixing it with plastic sealing, the reliability problem of the second capacitor Cin falling or shifting due to the remelting of the solder joint can be avoided. Similarly, the first capacitor Co can also be arranged on the bottom surface of the inductor component 210 using the same technical means, such as Fig.16b The structure disclosed in this embodiment greatly improves the reliability of the module and reduces the difficulty of customers applying the module; further, when the switching frequency of the module increases to MHz or even above several MHz, and the inductor becomes thinner and thinner, resulting in the inductor body structure being not strong enough, the capacitor and the inductor are plastic-sealed together, which effectively solves the inductance strength problem.

[0207] exist Fig.16a and Fig.16b Based on the structure shown, the external electrode 294 of the inductor winding can be led out through laser opening and electroplating on the plastic layer or through the plastic power column pin, or electroplating can be performed on the surface of the plastic layer to form a power electrical connector or a signal electrical connector. Fig.16c Further, as Fig.16d As shown, a multi-layer circuit board, namely a top plate 110 and a bottom substrate 310, can be arranged on the surface of the plastic packaging layer to further increase the structural strength of the inductor component, reduce the solder joints inside the module and the thickness of the module, and make the structural strength of the module increasingly stronger.

[0208] The production process of the structure disclosed in this embodiment is as follows Figures 17a to 17iAs shown,

[0209] S1 (place capacitor): Fig.17a As shown, the second capacitor component 292 is placed on a flat carrier 295 to achieve leveling of the bonding surface between the capacitor component and the carrier 295. Optionally, glue 296 is placed at the position corresponding to the capacitor on the inductor component 210, and the amount of glue 297 should be sufficient to maintain the inductor balance.

[0210] S2 (place inductor): Fig.17b As shown, the inductor component 210 is placed above the second capacitor component 292 and pressurized so that the glue fixes the inductor component 210 and the second capacitor component 292 together; the glue 297 here should be as thin as possible so that the gap between the tallest capacitor in the second capacitor component 292 and the inductor is as small as possible, with direct contact being the best, thereby reducing the height of the integrated component 600.

[0211] S3 (plastic seal): Fig.17c As shown, the carrier 295, the second capacitor component 292 and the inductor component 210 are encapsulated together, and the molding compound fills the gap between the second capacitor array 292 and the inductor component 210 and fixes the two together.

[0212] S4 (remove carrier): Fig.17d As shown, the carrier 295 is removed, and part of the plastic material on the surface of the plastic layer 270 is removed to expose the pins of the capacitor.

[0213] In this production process, if Fig.17e As shown, after S2 (placing the inductor), S1 (placing the capacitor) and S2 (placing the inductor) can be repeated, and the first capacitor component 260 can be set on the other side of the inductor component 210, and then S3 (plastic packaging) and S4 (removing the carrier) can be performed.

[0214] In this production process, the gap between the capacitor and the inductor components is reduced, and the plastic packaging material on the outer surface of the capacitor can also be made very thin, so the space utilization rate of the integrated capacitor and inductor components is extremely high. If it is necessary to integrate capacitors on multiple sides of the inductor component, capacitors can be pre-placed on the required surface of the inductor component before plastic packaging.

[0215] Furthermore, the production process disclosed by the present invention may also include:

[0216] S5 (film coating): laminating the film layers 297 and 298 on the surface of the plastic package body 270, such as Fig.17f shown.

[0217] S6 (punching and wiring): punching and electroplating at the positions corresponding to the capacitor electrodes and winding electrodes, leading out the external electrodes 293 and 294 of the capacitor and inductor winding and the signal pin 299, forming the inductor component 210, such as Figure 17g shown.

[0218] S7 (substrate): Figure 17h As shown, a top plate 110 and a bottom substrate 310 are grown on the top and bottom surfaces of the inductor component 210 according to the PCB process; and a solder pad is formed on the upper surface of the top plate 110 for electrical connection with the IPM unit or other chips; and a solder pad is formed on the lower surface of the bottom substrate 310 for external electrical connection with the system mainboard.

[0219] Next, IPM units 211 and 212 may be disposed on the upper surface of the top plate 110, such as Fig.17i As shown, but not limited to this, silicon capacitors, SPS / DrMOS, controllers, drivers, Power ICs, etc. can also be set, and IC bare wafers with metal conductive paths or copper balls can also be set. Optionally, the upper surface of the top plate 110 and the components set on the upper surface are plastic-sealed.

[0220] Embodiments 11 to 13 are described using two module panels as an example, but are not limited thereto. The aforementioned production process can also be performed for three or more module panels. It is only necessary to cut and separate the panels after the aforementioned steps are completed. Similarly, the aforementioned production process is also applicable to the production of a single module. Fig.18 shown.

[0221] Embodiment 14

[0222] As the operating frequency of the integrated power converter module increases, the frequency characteristics of the second capacitor Cin are required to be higher and higher, while the capacitance of the second capacitor Cin is required to be lower and lower. Therefore, a practical semiconductor capacitor 215 (such as a silicon capacitor) is required to be used as the first-stage filter capacitor, that is, in the module, the second capacitor Cin includes two types: ceramic capacitor and semiconductor capacitor.

[0223] The second capacitor Cin and the first capacitor Co disclosed in the present invention are described by taking ceramic capacitors as examples, but are not limited thereto. Semiconductor capacitors or other capacitors can also adopt the module structure and production process disclosed in the present invention and can also obtain the same benefits. Fig.19aAs shown, other semiconductor chips, such as smart power stage SPS, DrMOS, controller, driver or Power IC, etc., can be arranged on the top surface of the top plate 110. Similarly, semiconductor capacitors can be arranged near the semiconductor chips, and ceramic capacitors are arranged on the bottom surface of the top plate 210 to form a multi-stage decoupling mechanism to meet the high-frequency requirements of the module. In other schemes, semiconductor capacitors 215 can also be arranged on the bottom surface of the top plate 210 to complete the required functions together with ceramic capacitors.

[0224] like Fig.19b As shown, the bare chip and semiconductor capacitor 215 of the IPM unit 211 / 212 are respectively arranged on the top and bottom surfaces of the top plate 210, and then the whole is plastic-sealed and the plastic-sealed body is thinned. The thickness of the top component 100 can be 0.8mm, so the thickness of the module can reach 2.5mm. The module of this thickness can meet the application of all current occasions; it can simultaneously achieve high current density, thin thickness and double-sided heat dissipation function of the module.

[0225] In this embodiment, the Fig.19b The top and bottom surfaces of the plastic package body 270 are electroplated to form a protective layer 216 and a pad 217, respectively. Fig.19c shown.

[0226] The embodiments of the present invention are mainly used for step-down circuits, and can also be applied to step-up circuits or step-up / step-down circuits, and are even very suitable for applications such as Class D active power amplifiers that include high-frequency switches, high-frequency capacitors, and high-frequency inductors.

[0227] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

[0228] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. An integrated component, characterized in that: comprising an inductor component and a first capacitor component; The top surface of the integrated component is provided with upper surface pins, and the bottom surface is provided with lower surface pins; The inductor component includes a magnetic core and a main winding passing through the magnetic core from the top surface to the bottom surface of the magnetic core, the main winding is electrically connected to the upper surface pins and the lower surface pins, the surface of the magnetic core has a capacitor setting area, and the first capacitor component is set in the capacitor setting area; the bottom surface of the electrode of the first capacitor component and the lower surface pin of the inductor component are coplanar, and the top surface of the first capacitor component and the surface of the magnetic core are electrically isolated.

2. The integrated assembly according to claim 1, characterized in that: The capacitor setting area is arranged at the bottom of the magnetic core, and the bottom surface of the electrode of the first capacitor component and the lower surface pin of the inductor component are coplanar.

3. The integrated assembly according to claim 2, characterized in that: The integrated component also includes a second capacitor component. The top of the magnetic core has another capacitor setting area, and the second capacitor component is set in the capacitor setting area on the top of the magnetic core; the top surface of the electrode of the second capacitor component and the upper surface pin of the inductor component are coplanar, the bottom surface of the second capacitor component and the surface of the magnetic core are electrically isolated, and the second capacitor component is electrically isolated from the main winding.

4. The integrated assembly according to claim 1, characterized in that: The first capacitor component includes a layered capacitor, which includes a first electrical plate, a second electrical plate and a dielectric layer stacked in layers. The layered capacitor is provided with a hole groove at a position corresponding to the main winding. The first electrical plate is electrically connected to a first electrical pad arranged around the hole groove, the second electrical plate is electrically connected to a second electrical pad arranged on at least one side of the layered capacitor, and the dielectric layer is arranged between the first electrical plate and the second electrical plate.

5. The integrated assembly according to claim 4, characterized in that: The layered capacitor is arranged in the capacitor arrangement area by sintering first and then assembling.

6. The integrated assembly according to claim 4, characterized in that: The layered capacitor is formed by in-situ sintering of capacitor blanks.

7. The integrated assembly according to claim 1, characterized in that: The integrated component further includes an integrated substrate, the inductor component and the first capacitor component are embedded in the integrated substrate, and the upper surface pins and the lower surface pins are both arranged on the top and bottom of the integrated substrate.

8. The integrated assembly according to claim 7, characterized in that: The integrated substrate includes a bottom wiring layer; The bottom wiring layer is used to rearrange the pins on the bottom surface of the integrated component; The integrated substrate further comprises a vertical electrical connector, and / or a vertical electrical connector is disposed on a side of the inductor component; One end of the vertical electrical connector is electrically connected to the bottom wiring layer; At least a portion of the vertical electrical connectors are power electrical connectors; at least a portion of the vertical electrical connectors are signal electrical connectors.

9. The integrated assembly according to claim 8, characterized in that: The first capacitor component is an output capacitor component, which is disposed at the bottom of the magnetic core, and one electrode of the output capacitor component is electrically connected to the main winding through the bottom wiring layer.

10. The integrated assembly according to claim 7, characterized in that: The integrated substrate includes a top wiring layer and a bottom wiring layer; the integrated assembly also includes a top assembly, and the top assembly includes a top plate and an IPM unit; The top wiring layer is electrically connected to the top component, and the bottom wiring layer is used to rearrange the bottom pins of the integrated component; The integrated component further comprises a vertical electrical connector, and / or a vertical electrical connector is disposed on a side of the inductor component; Two ends of the vertical electrical connector are electrically connected to the top wiring layer and the bottom wiring layer respectively.

11. The integrated assembly according to claim 1, characterized in that: The integrated component also includes an insulating substrate, one side of which is close to the capacitor setting area, and the first capacitor component is fixed on the other side of the insulating substrate; the insulating substrate includes two through holes for the main winding to pass through; the insulating substrate is used to achieve electrical isolation between the first capacitor component and the surface of the magnetic core.

12. The integrated assembly according to claim 1, characterized in that The capacitor setting area is a recessed area arranged at the bottom of the magnetic core, and the recessed area is connected to at least one side surface of the magnetic core.

13. The integrated assembly according to claim 12, characterized in that The capacitor setting area is a recessed area arranged at the bottom of the magnetic core, and the recessed area is connected to two opposite side surfaces of the magnetic core.

14. The integrated assembly according to claim 1, characterized in that: The integrated component further comprises a vertical electrical connector, wherein the vertical electrical connector is arranged on a side of the inductor component; The two ends of the vertical electrical connector form an upper surface pin and a lower surface pin at the top and bottom of the inductor component respectively; At least a portion of the vertical electrical connectors are power electrical connectors; at least a portion of the vertical electrical connectors are signal electrical connectors.

15. The integrated assembly according to claim 1 or 2, characterized in that: At least one of the first capacitor components and the magnetic core are fixedly connected by adhesive.

16. The integrated assembly according to claim 1 or 2, characterized in that: The integrated component also includes at least one middle plastic package, which covers at least a portion of the surface of the inductor component and at least one of the first capacitor components. The middle plastic package is provided with electrical connection windows at positions corresponding to the electrodes of the inductor component and the electrodes of the first capacitor component.

17. The integrated assembly according to claim 1 or 2, characterized in that: At least one of the first capacitive components comprises an integrated silicon capacitor.

18. The integrated assembly according to claim 1 or 2, characterized in that: At least one of the first capacitor components includes a plurality of capacitor elements, and electrodes of the plurality of capacitor elements are arranged in a triangular staggered array.

19. The integrated assembly according to claim 1 or 2, characterized in that: The inductor assembly also includes auxiliary windings whose number corresponds to the main windings. The auxiliary windings are arranged side by side and adjacent to the corresponding main windings. The auxiliary windings are electrically isolated from the corresponding main windings and have magnetic coupling. The auxiliary windings are used to implement TLVR technology.

20. The integrated assembly according to claim 19, characterized in that The auxiliary winding and the main winding respectively have a transverse winding section, the auxiliary winding and the corresponding main winding have magnetic coupling in the transverse winding section, and both ends of the auxiliary winding are arranged on the bottom surface of the magnetic core.

21. The integrated assembly according to claim 20, characterized in that The end surface of the main winding located at the bottom surface of the magnetic core has a chamfer or a corner notch, and a corresponding end surface of the auxiliary winding is arranged at a position adjacent to the chamfer or the corner notch.

22. The integrated assembly according to claim 20, characterized in that The bottom surface of the integrated component is also provided with a wiring conversion layer, and the wiring conversion layer is used to rearrange the bottom pins of the integrated component; the number of the main windings is at least two, and the auxiliary windings are connected in series through the wiring conversion layer to form a multi-phase TLVR loop.

23. The integrated assembly according to claim 1, characterized in that The number of the main windings is two, each of which has a transverse winding segment, and when the direction from the top surface to the bottom surface of the magnetic core is the positive direction of the current, the current directions in the two transverse winding segments are opposite; the inductor component also includes an auxiliary winding, the auxiliary winding is a loop shape, at least two parts of the auxiliary winding are respectively arranged side by side and adjacent to the two transverse winding segments, and the auxiliary winding is used to implement TLVR technology.

24. The integrated assembly according to claim 1 or 2, characterized in that: It also includes a metal shielding layer, which is arranged on the side surface or inside the side of the integrated component.

25. An integrated power converter module, the integrated power converter module is applied to a vertical power supply mode, characterized in that: comprising a top assembly and an integrated assembly as claimed in claim 2; The top component includes a top plate, an IPM unit and a second capacitor component; the top component is arranged on the top of the integrated component, the IPM unit and the main winding are electrically connected through the top plate; the second capacitor component and the IPM unit are electrically connected through the top plate.

26. The integrated power converter module according to claim 25, characterized in that The top component also includes a top plastic package; the second capacitor component includes a ceramic capacitor and a semiconductor capacitor; the IPM unit and the semiconductor capacitor are arranged on the top surface of the top plate, and the ceramic capacitor is arranged on the bottom surface of the top plate; the top plastic package covers the top plate, the IPM unit and the second capacitor component; the ceramic capacitor and the semiconductor capacitor are used to form a multi-stage decoupling.

27. The integrated assembly according to claim 25, characterized in that The IPM unit is buried in the upper part of the top plate, and the second capacitor component is buried in the lower part of the top plate.

28. An integrated component, characterized in that including an inductor assembly and a bottom substrate unit; The top surface of the integrated component is provided with upper surface pins, and the bottom surface is provided with lower surface pins; The bottom substrate unit includes a bottom substrate, a metal column and a first capacitor component; The inductor component includes a magnetic core and a main winding passing through the magnetic core from the top surface to the bottom surface of the magnetic core, and the inductor is arranged on the upper surface of the bottom substrate; the two ends of the first capacitor component are electrically connected to the corresponding metal pillars through the bottom substrate; the metal pillars are electrically connected to the main winding respectively; the wiring in the bottom substrate makes the electrical network of the partial or all pads on the lower surface of the bottom substrate and the electrical network of the partial or all pads on the upper surface of the bottom substrate satisfy a one-to-one correspondence in position.

29. The integrated assembly according to claim 28, characterized in that The metal column and the first capacitor component are arranged on the lower surface of the bottom substrate, and the lower surface of the bottom substrate and the metal column are plastic-sealed to form a plastic-sealed body; windows are opened on the lower surface of the plastic-sealed body and bottom surface pins are formed by electroplating.

30. The integrated assembly according to claim 28, characterized in that The metal column and the first capacitor component are arranged inside the bottom substrate, and the lower surface pins arranged at the bottom of the bottom substrate are electrically connected to the positive electrode and the negative electrode of the metal column and the first capacitor component respectively.

31. The integrated assembly according to claim 28, characterized in that The integrated component is an integrated power converter module, which also includes a top component, which includes an IPM unit and a top plate; the top component is arranged on the top of the integrated power converter module, and the IPM unit and the main winding are electrically connected through the top plate.

32. The integrated assembly according to claim 31, characterized in that The top assembly further includes a top plastic package body, wherein the top plastic package body covers at least a portion of the top surface of the top plate and the IPM unit.

33. The integrated assembly according to claim 31, characterized in that The top assembly further includes a control unit, and the control unit is electrically connected to the IPM unit.

34. The integrated assembly according to claim 28, characterized in that External pads are disposed at the bottom of the integrated component, and at least a portion of the external pads corresponding to electrodes of different electrical properties are arranged in an alternating array.

35. The integrated assembly according to claim 31, characterized in that The top component also includes a second capacitor component and a top plastic package; the second capacitor component is arranged on the bottom surface of the top plate; the top plastic package covers the top plate and the second capacitor component; the second capacitor component and the IPM unit are electrically connected through the top plate.

36. The integrated assembly according to claim 28, characterized in that The integrated component is an integrated power converter module, which also includes a top component, which includes a top plate, an IPM unit, a second capacitor component and a top plastic package; the second capacitor component includes a ceramic capacitor and a semiconductor capacitor; the IPM unit and the semiconductor capacitor are arranged on the top surface of the top plate, and the ceramic capacitor is arranged on the bottom surface of the top plate; the top component is arranged on the top of the integrated power converter module, and the IPM unit and the main winding are electrically connected through the top plate; the top plastic package covers the top plate, the IPM unit and the second capacitor component; the second capacitor component and the IPM unit are electrically connected through the top plate; the ceramic capacitor and the semiconductor capacitor are used to form multi-stage decoupling.

37. The integrated assembly according to claim 28, characterized in that The integrated component is an integrated power converter module, which also includes a top component, which includes a top plate, an IPM unit and a second capacitor component; the IPM unit is buried in the upper part of the top plate, and the second capacitor component is buried in the lower part of the top plate; the second capacitor component and the IPM unit are electrically connected through the top plate; the top component is arranged on the top of the integrated power converter module, and the IPM unit and the main winding are electrically connected through the top plate.

38. An integrated power converter module, the integrated power converter module is applied to a vertical power supply mode, characterized in that: It includes a top component, a middle component and a bottom component; The top assembly includes an IPM unit; The middle component includes an inductor component; the inductor component includes a magnetic core, a main winding passing through the magnetic core from the top surface to the bottom surface of the magnetic core, and a side electrical connector arranged on the side surface of the magnetic core; The bottom assembly includes a bottom substrate, at least one capacitive element, and a plurality of metal conductive paths; The top surface of the middle component is electrically connected to the top component; The bottom surface of the middle component is electrically connected to the top surface of the bottom substrate, the side electrical connector is electrically connected to the metal conductive path through the bottom substrate; the main winding is electrically connected to the capacitor element through the bottom substrate; The bottom surface of the electrode of the capacitor element is coplanar with the bottom surface of the metal conductive path.

39. The integrated power converter module of claim 38, wherein: The bottom component also includes a bottom plastic package, which covers at least a portion of the bottom surface of the bottom substrate, the metal conductive path and the capacitor element, and the bottom surface of the electrode of the capacitor element and the bottom surface of the metal conductive path are exposed from the bottom plastic package.

40. The integrated power converter module of claim 38, wherein: It also includes a double-sided plastic package body, which covers at least a portion of the top component and at least a portion of the bottom component, and the bottom surface of the capacitor element and the bottom surface of the metal conductive path are exposed from the double-sided plastic package body.

41. The integrated power converter module of claim 38, wherein: The metal conductive path includes a metal column, and the capacitor element and the metal column are buried in the bottom substrate.

42. The integrated power converter module of claim 38, wherein: The metal conductive path includes a conductive hole, which is formed by drilling a hole in the plastic package and electroplating the hole wall.

43. The integrated power converter module of claim 38, wherein: It also includes an integrated substrate, the middle component and the bottom component are buried in the integrated substrate, and the top component is arranged on the top surface of the integrated substrate.

44. The integrated power converter module according to claim 43, characterized in that The top assembly further includes a top plastic package, which covers at least a portion of the top surface of the IPM unit and the integrated substrate.

45. The integrated power converter module of claim 43, wherein: The integrated substrate includes a top wiring layer, a bottom wiring layer and vertical electrical connections; The top wiring layer is electrically connected to the top component, and the bottom wiring layer is used to rearrange the bottom pins of the integrated power converter module; the two ends of the vertical electrical connector are electrically connected to the top wiring layer and the bottom wiring layer respectively; at least a portion of the vertical electrical connector is a signal electrical connector.

46. ​​The integrated power converter module of claim 38, wherein: The inductor assembly also includes auxiliary windings whose number corresponds to the main windings. The auxiliary windings are arranged side by side and adjacent to the corresponding main windings. The auxiliary windings are electrically isolated from the corresponding main windings and have magnetic coupling. The auxiliary windings are used to implement TLVR technology.

47. The integrated power converter module of claim 46, wherein: The auxiliary winding and the main winding respectively have a transverse winding section, the auxiliary winding and the corresponding main winding are magnetically coupled in the transverse winding section, and both ends of the auxiliary winding are arranged on the bottom surface of the magnetic core; the number of the main windings is at least two, and the auxiliary windings are connected in series through the bottom component to form a multi-phase TLVR loop.

48. The integrated power converter module of claim 38, wherein: The number of the main windings is two, each of which has a transverse winding segment, and when the direction from the top surface to the bottom surface of the magnetic core is the positive direction of the current, the current directions in the two transverse winding segments are opposite; the inductor component also includes an auxiliary winding, the auxiliary winding is a loop shape, at least two parts of the auxiliary winding are respectively arranged side by side and adjacent to the two transverse winding segments, and the auxiliary winding is used to implement TLVR technology.

49. An integrated power converter module according to any one of claims 38 to 48, characterized in that: The bottom of the integrated power converter module is provided with pads, and at least a portion of the pads corresponding to electrodes of different electrical properties are arranged in an alternating array.

50. An integrated component, characterized in that Including inductor components, plastic package and capacitor components; The inductor assembly comprises a magnetic core and a main winding passing through the magnetic core from the top surface to the bottom surface of the magnetic core; one end of the main winding is electrically connected to the top surface of the integrated assembly; the other end of the main winding is electrically connected to the bottom surface of the integrated assembly; The capacitor component is fixed above and / or below the inductor component through a plastic package, and the electrodes of the capacitor component are exposed on the surface of the plastic package.

51. The integrated assembly according to claim 50, characterized in that It also includes an external electrode, one end of which is exposed on the surface of the plastic package and flush with the electrode of the capacitor component, and the other end of the external electrode is electrically connected to the main winding. The external electrode is a metal column or a conductive hole.

52. The integrated assembly according to claim 50, characterized in that The main winding passes through the plastic package body, and one end of the main winding is exposed on the surface of the plastic package body and is flush with the electrode of the capacitor component.

53. The integrated assembly according to claim 50, characterized in that The capacitor assembly includes a plurality of capacitor elements, one electrode of the capacitor element is exposed on the surface of the plastic package body, and the other electrode of the capacitor element is led out to the surface of the plastic package body through an opening on the plastic package body.

54. The integrated assembly according to claim 50, characterized in that The capacitor assembly includes a plurality of capacitor elements, which are fixedly connected by glue and magnetic cores; the capacitor assembly is leveled by a carrier before plastic packaging.

55. The integrated assembly according to claim 50, characterized in that The capacitor component includes a first capacitor component and a second capacitor component; the first capacitor component is arranged below the inductor component; and the second capacitor component is arranged above the inductor component.

56. The integrated assembly according to claim 55, characterized in that The second capacitor assembly and the first capacitor assembly respectively include multiple capacitor elements, and the capacitor elements are fixedly connected by glue and magnetic cores; the second capacitor assembly and the first capacitor assembly are respectively fixed by one-time plastic packaging; the second capacitor assembly is leveled by a carrier before plastic packaging; the first capacitor assembly is leveled by a carrier before plastic packaging.

57. The integrated assembly according to claim 50, characterized in that There are at least two main windings; and the inductor component is a multi-phase inductor.

58. The integrated assembly according to claim 50, characterized in that The integrated component is an integrated power converter module, which is applied to the vertical power supply mode; the integrated component also includes an IPM unit; the IPM unit is arranged above the inductor component; the capacitor component includes a second capacitor component, and the second capacitor component is arranged between the inductor component and the IPM unit; the IPM unit is electrically connected to the main winding; the IPM unit is electrically connected to the second capacitor component.

59. An integrated component, characterized in that Including top assembly; The top assembly includes an IPM unit and a top plate; The IPM unit is arranged on the top surface of the top plate, or the IPM unit is buried in the top of the top plate; A capacitor component is disposed on the bottom surface of the top plate, or a capacitor component is buried in the bottom of the top plate; The capacitor assembly and the IPM unit are electrically connected through the top plate.

60. The integrated assembly according to claim 59, characterized in that The top component further comprises a plastic packaging body, and the plastic packaging body covers the top surface of the top plate and / or the bottom surface of the top plate.

61. The integrated assembly according to claim 59, characterized in that The top assembly further includes a control unit electrically connected to the IPM unit.

62. The integrated assembly according to claim 60, characterized in that The capacitor assembly is specifically arranged on the bottom surface of the top plate, and the bottom surface of the top plate is also provided with a power column pin; the plastic package at least covers the bottom surface of the top plate, the capacitor assembly and the power column pin; the bottom surface of the power column pin is exposed to the plastic package, and the power column pin is used to lead the electrode of the IPM unit to the bottom surface of the plastic package.

63. The integrated assembly according to claim 60, characterized in that The capacitor assembly is specifically arranged on the bottom surface of the top plate, and the plastic package at least covers the bottom surface of the top plate and the capacitor assembly; an electrical connection hole is arranged on the plastic package, one end of the electrical connection hole is located on the bottom surface of the top plate, and the other end of the electrical connection hole is located on the lower surface of the plastic package, and a power electroplating pin is arranged in the electrical connection hole, and the power electroplating pin is used to lead the electrode of the IPM unit to the bottom surface of the plastic package.

64. The integrated assembly according to claim 59, characterized in that The capacitor component includes a ceramic capacitor.

65. The integrated assembly according to claim 64, characterized in that A semiconductor capacitor is also disposed on the top surface of the top plate, and the semiconductor capacitor is electrically connected to the IPM unit through the top plate; the ceramic capacitor and the semiconductor capacitor are used to form a multi-stage decoupling.

66. The integrated assembly of claim 59, wherein: The capacitor component includes a semiconductor capacitor.

67. The integrated assembly according to claim 59, characterized in that The integrated component is an integrated power converter module, and the integrated power converter module is applied to a vertical power supply mode; the integrated component also includes an inductor component; the inductor component includes a magnetic core and a main winding passing through the magnetic core from the top surface to the bottom surface of the magnetic core; The top assembly is disposed on the top of the integrated assembly, and the IPM unit and the main winding are electrically connected through a top plate.

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