Two-dimensional organic / inorganic heterojunction photoelectric nerve device and preparation method thereof

Abstract

The invention discloses a two-dimensional organic / inorganic heterojunction photoelectric nerve component and a preparation method thereof, and belongs to the technical field of photoelectric devices. According to the invention, a TMDC material MoS2 is transferred to a substrate through a mechanical stripping method, then a film electrode is plated on a MoS2 layer through an electron beam lithography method, and finally a single-layer Me-PTCDI crystal is epitaxially grown on the MoS2 layer through a back-off method to form the heterojunction. Due to the formation of the MoS2 / Me-PTCDI heterojunction, the photoelectric nerve device has excellent photosensitivity and light adaptability, and can simulate reactions of retinal essential photosensitive ganglion cells under different illumination; the device can make current change under the stimulation of light pulses so as to simulate the generation and action of human melatonin, and can realize visual adaptation in bright and dark environments under the regulation and control of grid voltage, and the device has a wide application prospect in the field of automatic driving due to the corresponding characteristics.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic devices, and in particular to a two-dimensional organic / inorganic heterojunction optoelectronic neuron device and a preparation method thereof. Background Art

[0002] Optoelectronic neuron devices are a new type of multifunctional bionic device that combines photoelectric conversion and neural simulation functions. Its core advantage is that it can simultaneously detect and memorize optical signals, which enables them to achieve functions similar to the human visual nervous system and optogenetic nervous system. Such devices are usually composed of photosensitive materials, conductive materials and dielectrics, and realize the conversion and processing of photoelectric signals through photoelectric effect and electrical regulation. In optoelectronic neuron devices, photosensitive materials are responsible for absorbing light energy and generating charge carriers to achieve photoelectric conversion; conductive materials are used to transmit and process charge carriers; dielectrics play a role in isolating and regulating charge transfer; different materials work together to ensure the stability and reliability of the device.

[0003] Two-dimensional materials are a type of material with a single or several atomic layers of thickness. They have a nanometer-scale thickness in one direction and can extend infinitely in the other two directions, so that carrier migration and heat diffusion are confined to the two-dimensional plane. Therefore, they will show different effects from three-dimensional materials when interacting with photoelectricity. They have the advantages of high heterojunction compatibility, gate adjustability and small size. Two-dimensional optoelectronic neuron devices are a new type of neuromorphic device developed based on such materials. It combines the unique properties of two-dimensional materials and the photoelectric effect to simulate the functions of biological neurons and synapses. Such devices are usually composed of two-dimensional materials (such as two-dimensional graphene, two-dimensional transition metal sulfide (TMDC), etc.), can respond to light signals, and can simulate the plasticity of biological synapses under the action of electric fields, such as long-term potentiation (LTP) and long-term depression (LTD).

[0004] According to relevant reports, if two-dimensional organic small molecule materials are combined with atomic layer inorganic semiconductors, the complementary advantages between different materials can be achieved, such as reducing interface state binding, reducing Coulomb interaction, enhancing light absorption effect, improving interface carrier transfer, etc. For example, a two-dimensional organic / inorganic heterojunction photodetector disclosed in Chinese patent CN117858520A uses an epitaxial growth method to construct an organic molecule layer on the surface of a two-dimensional alloy material layer to form a heterojunction. Since the heterojunction has fewer defects, it can enhance light absorption and will not cause carriers to be captured. Therefore, the detector has excellent detection capabilities, large light absorption and photoconductivity gain, and has a fast response speed, and performs well in imaging applications. However, this patent mainly uses the characteristics of two-dimensional alloy materials to hinder the generation and migration of photogenerated carriers, so that the device finally has a lower dark current and a faster response speed, so it is mainly used in the field of photoelectric detection. A photodetector is a device used to convert light signals into electrical signals. Unlike photoelectric neuron devices, the neuron function of a two-dimensional photoelectric neuron device is mainly reflected in its response to input light signals and the regulation of output electrical signals. When the light signal shines on the surface of the device, the photosensitive material absorbs photons and generates charges, resulting in charge transfer and accumulation; the transfer and diffusion of charges in the conductive material will affect the device's electrical properties such as resistance and capacitance, thereby achieving neuron-like functions. Therefore, even if both types of devices are prepared by designing heterojunctions, different devices have completely different requirements for the structural composition and performance of their heterojunctions, and therefore there will be certain differences in the preparation process.

[0005] There are few reports in the existing technology on combining two-dimensional organic small molecule materials with atomic layered inorganic semiconductors to form heterojunctions to construct optoelectronic neuron devices. Currently, related research is still in its infancy, and there is still a need to further optimize the device structure, improve performance, and deeply explore its potential applications in neuromorphic simulation, information processing, etc. Summary of the invention

[0006] The purpose of the present invention is to solve the problems existing in the prior art, provide a two-dimensional organic / inorganic heterojunction photoelectric neuron device and disclose a specific preparation method, wherein the organic molecular layer and the two-dimensional TMDC material form a heterojunction, giving the photoelectric neuron device excellent photosensitivity and light adaptability; the device can make current changes under the stimulation of light pulses, and can achieve visual adaptation in bright and dark environments under the regulation of gate voltage.

[0007] In order to achieve the above technical objectives, the present invention is implemented through the following technical solutions: a two-dimensional organic / inorganic heterojunction photoelectric neuron device, including a substrate, a two-dimensional TMDC material layer, a thin film electrode and an organic molecule layer; the two-dimensional TMDC material layer is arranged on the substrate, and after a thin film electrode is produced on the two-dimensional TMDC material layer by electron beam lithography, an organic molecule layer is epitaxially grown on the two-dimensional TMDC material layer by the inverted method to form a heterojunction to enhance the photosensitivity and light adaptability of the photoelectric neuron device, which is used to simulate the response of retinal intrinsic photosensitive ganglion cells under different light.

[0008] Furthermore, the optoelectronic neuron device can make current changes under the stimulation of light pulses, thereby imitating the production and action of melatonin in the human body, and can achieve visual adaptation in bright and dark environments under the regulation of gate voltage.

[0009] Furthermore, the material of the two-dimensional TMDC material layer is MoS2, and the material for forming the organic molecular layer is N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide or 3,4,9,10-perylenetetracarboxylic dianhydride.

[0010] The above-mentioned two-dimensional organic / inorganic heterojunction optoelectronic neuron device can simulate the response of retinal intrinsic photosensitive ganglion cells under different light conditions, imitate the production and action of human melatonin, and can achieve the ability of visual adaptation in bright and dark environments. Based on the above-mentioned excellent properties of this device, the optoelectronic neuron device can be used in the field of autonomous driving and has good application prospects.

[0011] The above-mentioned two-dimensional organic / inorganic heterojunction optoelectronic neuron device can be made into a device array form, which includes several discrete optoelectronic neuron devices. Several discrete optoelectronic neuron devices are assembled on the same substrate and arranged in an array. Compared with a single device, each device can not only imitate the alert reaction of an organism under short-term light exposure, but also represent a pixel point respectively, completing light and dark adaptation similar to the coordination of the human eye and brain, simulating integrated image recognition, and can simultaneously control the gate voltage of several devices, with strong operability.

[0012] The preparation method of the above two-dimensional organic / inorganic heterojunction optoelectronic neuron device is as follows: 1) Pre-treating the substrate; 2) Peel off the two-dimensional TMDC material on the blue film, repeatedly stick and tear it apart to form a two-dimensional TMDC material / blue film structure; 3) Lay the PDMS film on the glass slide to obtain the PDMS / glass slide structure; 4) The two-dimensional TMDC material to be transferred is transferred to the PDMS film by mechanical peeling to form a glass slide / PDMS / TMDC structure, and the excess PDMS film is cut off with the two-dimensional TMDC material to be transferred as the center; 5) Fix the glass slide with the two-dimensional TMDC material in the substrate slot of the transfer platform, and place the substrate on the sample holder of the transfer platform; 6) By controlling the rate at which the transfer platform descends to fit and rises to separate, the two-dimensional TMDC material is separated from the PDMS and then attached to the substrate; 7) Using electron beam lithography to deposit thin film electrodes on both ends of the two-dimensional TMDC material layer; 8) Place the organic source material in the center of the tube furnace, place the substrate obtained in the previous step upside down on top of the organic source material, evacuate the chamber, control the heating temperature and time under an inert atmosphere, and complete the device preparation after epitaxially growing a single layer of organic small molecule material crystals on the two-dimensional TMDC material.

[0013] Furthermore, the two-dimensional TMDC material is MoS2; and before transferring the two-dimensional TMDC material onto the PDMS film, the surface of the PDMS film needs to be treated with UV Ozone for 5 minutes.

[0014] Furthermore, the two-dimensional TMDC material transferred to the PDMS film is uniform, bubble-free, 0.7 nm thick, and a single layer; when transferring the two-dimensional TMDC material, the glass slide is uniformly lowered at a speed of 0.1 μm every 5 s to allow the two-dimensional TMDC material to adhere to the target substrate, and the adhesion state is maintained for 30 s to 3 min, and then the glass slide is uniformly lifted at a speed of 0.1 μm every 5 s to allow the two-dimensional TMDC material to be completely transferred to the target substrate.

[0015] Furthermore, in step 7), the parallel channel spacing between the two thin film electrodes prepared by electron beam lithography is 5 μm.

[0016] Furthermore, in step 8), the organic source material is N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide or 3,4,9,10-perylenetetracarboxylic dianhydride; the tubular furnace heating temperature is 190-290°C and the heating time is 15-30 min, so that the organic source material is evaporated to epitaxially grow a single layer of organic small molecule material crystals on the two-dimensional TMDC material.

[0017] The beneficial effects of the present invention are: 1. This application prepares a photoelectric neuron device with a simple structure by designing a MoS2 / Me-PTCDI heterojunction. The heterojunction formed by combining an organic molecular layer with a two-dimensional TMDC material layer makes the photoelectric neuron device have excellent photosensitivity and light adaptability, and can simulate the response of retinal intrinsic photosensitive ganglion cells under different light illumination; the device can make current changes under the stimulation of light pulses, thereby imitating the production and action of human melatonin, and can achieve visual adaptation in bright and dark environments under gate voltage regulation. The corresponding characteristics make this device have broad application prospects in the field of autonomous driving; 2. In the preparation of optoelectronic neuron devices, the present application first makes a gold electrode and then grows an organic material layer on the two-dimensional TMDC material layer. When the organic material layer is epitaxially grown, the high temperature environment of the furnace has an annealing effect on the electrode, so that the gold electrode and the two-dimensional TMDC material are in closer and better contact, and can effectively eliminate the impurities left by lithography, and will not change the properties of the heterojunction; 3. This application uses transition metal chalcogenides (TMDC) to prepare heterojunctions. TMDC, as a conductive material, is conducive to the transmission and processing of charge carriers. After the organic molecular layer is constructed on its surface by epitaxial growth, the aggregated state of the single-layer Me-PTCDI has strong light absorption and charge transfer properties, and can effectively generate different degrees of photocurrent in response to different light pulse stimulations; 4. This application adopts the inverted method to realize the epitaxial growth of the organic material layer. By reducing the distance between the target substrate material and the organic source, the difficulty of small organic molecules growing on the TMDC material is solved, and the probability of forming a van der Waals heterojunction is increased; 5. The preparation process of the optoelectronic neuron device disclosed in the present application places the epitaxial growth process of the organic material layer at the last step of the preparation process. The boundary line of the electrode and the junction of the TMDC material are conducive to the deposition of organic small molecules, and are more conducive to the formation of a high-quality uniform thin film structure, while ensuring the freshness of the organic layer; 6. This application uses a transfer platform to transfer two-dimensional TMDC materials, which can accurately transfer multiple pieces of two-dimensional TMDC materials to different positions on the substrate, accurately control the distribution of TMDC materials, and arrange them regularly on the substrate, so as to determine the specific position for the next step of patterned gold-plated electrodes, which is convenient for constructing device array structures, and the transfer process is uniform and smooth, without dirt or cracking; 7. This application uses electron beam lithography to make gold electrodes, which can complete the production of dozens of device electrodes at one time. It is fast and simple, can more accurately control the device position, channel spacing, electrode size, and has higher production flexibility; 8. The optoelectronic neuron device array structure prepared in the present application includes multiple discrete neuron devices. Compared with a single device, the device array can achieve more diverse functions. Each device in the device array can not only individually imitate the alert response of an organism under short-term light exposure, but also represent a pixel point, completing light and dark adaptation similar to the coordination of the human eye and brain, and is used to simulate integrated image recognition; 9. The spacing between individual devices on the optoelectronic neuron device array prepared by the present application is small, and the number of devices in a small area is large, which reduces the inconvenience caused by the need to re-insert and adjust the needle when conducting corresponding tests. In addition, the structure of individual devices is the same, and the channel distance is fixed, so it is not easy to cause uneven illumination when adjusting different light sources; 10. The heterojunction optoelectronic neuron device disclosed in this application has a simple preparation process and low preparation cost. It is expected to become a feasible choice for future low-cost functional neuromorphic simulation and optoelectronic storage applications, and can also provide new ideas for the development of corresponding fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a preparation flow chart of the two-dimensional organic / inorganic heterojunction optoelectronic neuron device in Example 1; Figure 2 PL spectrum data of the mixed heterojunction, Me-PTCDI organic source material and two-dimensional TMDC material MoS2 prepared in Example 1; Figure 3 The small figure (a) is a test effect diagram of a single light pulse test on the optoelectronic neuron device prepared in Example 1, and the small figure (b) is a test effect diagram of a single light pulse test on a comparative device prepared by first growing an organic layer on a two-dimensional TMDC material and then plating electrodes; Figure 4 This is a photocurrent response test diagram of the two-dimensional organic / inorganic heterojunction optoelectronic neuron device prepared in Example 1 under different illumination times; Figure 5 This is a test diagram of the photocurrent response of the two-dimensional organic / inorganic heterojunction optoelectronic neuron device prepared in Example 1 under different light intensities; Figure 6 The two-dimensional organic / inorganic heterojunction optoelectronic neuron device prepared in Example 1 is a curve diagram of simulating dark adaptation and light adaptation by gate voltage regulation under weak light and strong light; Figure 7 This is a microscope photo of a plurality of neuron device arrays prepared in Example 2, wherein 1-a single device, 2-a gold electrode on one side, 3-a channel; Figure 8 It is a schematic diagram of the process of self-adaptation and pattern perception of the neuron device array prepared by Example 2. DETAILED DESCRIPTION

[0019] The following examples further illustrate the content of the present invention, but should not be construed as limiting the present invention. Without departing from the essence of the present invention, modifications and substitutions made to the methods, steps or conditions of the present invention all fall within the scope of the present invention.

[0020] The two-dimensional TMDC material MoS2 used in this application is mined from natural high-purity ore; Me-PTCDI powder was purchased from Sigma Aldrich with a purity of 97% and no further purification is required.

[0021] Example 1: Preparation of a two-dimensional organic / inorganic heterojunction optoelectronic neuron device

[0022] This embodiment discloses a specific device preparation process, refer to Figure 1 .

[0023] Step 1) Pre-treat the silicon (500 μm thick) / silicon oxide (280 nm thick) substrate (cut the wafer into small pieces with a diamond pen, first use acetone to clean the surface impurities, then use ethanol to clean the surface acetone, then use deionized water to clean the surface ethanol, and finally use a nitrogen gun to blow dry the substrate until there is no liquid residue) to obtain a silicon-based substrate with a clean surface.

[0024] Step 2) Peel off the two-dimensional TMDC material MoS2 onto the blue film and paste it repeatedly until its thickness reaches about 10 nm to form a MoS2 / blue film.

[0025] Step 3) Cut the PDMS into small pieces of 0.5 cm*1 cm, peel off the film on its upper surface with pointed tweezers, make it fit on the glass slide, treat the PDMS surface with UV Ozone for 5 min, then repeatedly paste the MoS2 / blue film material, transfer the MoS2 on the blue film to the PDMS, find a single layer of MoS2 without wrinkles or cracks under a microscope (thickness of 0.7 nm, red fluorescence under a fluorescence microscope), and cut the PDMS film into 0.2 cm*0.2 cm squares with a blade centered on the transferred MoS2 (after cutting off the excess film, a width of about 0.1 cm should be reserved between the material boundary and the film boundary, so that the two-dimensional TMDC material MoS2 is as close to the center of the cut film as possible to facilitate subsequent transfer).

[0026] Step 4) On the transfer platform (its function is to find the MoS2 observed under the microscope before and align it with the substrate to be transferred, the glass slide with the two-dimensional TMDC material is fixed in the substrate slot of the transfer platform, and the silicon-based substrate is adsorbed on the sample holder of the transfer platform. The transfer platform can be slowly raised and lowered, and the minimum distance of the rise and fall is adjusted to 0.1 μm, so that MoS2 can be slowly bonded to the substrate surface) first find the MoS2 to be transferred and align it with the preset silicon-based substrate position. During the transfer process, the bonding process maintains a uniform speed, descending 0.1 μm every 5 s. After complete bonding, keep bonding for 30 s, and then separate them at a uniform speed of rising 0.1 μm every 5 s (avoid rapid separation so that the material is torn or leave a large number of bubbles and residual glue), and obtain the MoS2 / substrate structure.

[0027] Step 5) A gold thin film electrode is plated on the MoS2 / substrate structure using an electron beam lithography apparatus. The gold thin film is a nearly square film of 100 μm×80 μm, and the minimum parallel spacing between the two gold thin films is 5 μm.

[0028] Step 6) Place the organic source material of N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic diimide (Me-PTCDI) into a quartz boat, and glue the MoS2 / substrate structure to the cover glass with high-temperature glue, and glue it upside down on top of the organic source material, leaving a certain gap with the organic source material without contact, and place the Me-PTCDI in the center of the tube furnace. The MoS2 / substrate structure covered with gold electrodes is also located directly above the center of the furnace. After the chamber is evacuated to less than 10 Pa, argon gas is passed through, and the furnace is heated to 230°C to evaporate Me-PTCDI. The heating is carried out for a total of 30 minutes, and a single layer of Me-PTCDI crystals is grown on the two-dimensional TMDC material layer to obtain a photoelectric neuron device with a Me-PTCDI / MoS2 / substrate structure.

[0029] Figure 2 PL spectrum data of MoS2 / Me-PTCDI heterojunction, Me-PTCDI organic source material and two-dimensional TMDC material MoS2 prepared in this embodiment; It can be seen from the PL spectrum that around 2.25 eV on the abscissa, narrow peaks appear in Me-PTCDI and the heterojunction, and the PL intensity of the heterojunction is significantly lower than that of Me-PTCDI (the figure shows ×10 data, so the peak of the heterojunction appears high), the excitons generated by Me-PTCDI dissociate at the heterojunction interface, the charge is transferred to MoS2, and the fluorescence of the monolayer Me-PTCDI is quenched.

[0030] The photoelectric neuron device prepared in Example 1 was tested with a single light pulse, and the results were as follows: Figure 3As shown in the middle panel (a), the electrode is made first, and then the organic material is grown. The high temperature environment during the growth removes other impurities on the surface of the two-dimensional material to a certain extent, and further promotes the closer contact between the electrode and the two-dimensional material, the current value tends to be stable, and the overall current value is larger. For comparison, during the experiment, the preparation order of the gold electrode and the organic material layer was tried to be changed, that is, the Me-PTCDI organic material layer was first grown on MoS2, and then the gold electrode was made on it. The preparation parameters of the corresponding process remained unchanged, and the resulting device was recorded as a comparison device. A single light pulse test was performed on the obtained comparison device, and the results are shown in the figure below. Figure 3 As shown in the middle panel (b), in comparison, the current curve has many burrs and is not smooth. This phenomenon may be caused by first growing an organic material layer on MoS2 and then plating a gold electrode, resulting in the electrode of the comparison device not being firmly bonded to the two-dimensional TMDC material layer.

[0031] Figure 4 This is a photocurrent response test graph of the two-dimensional organic / inorganic heterojunction optoelectronic neuron device prepared in Example 1 under different illumination times; as the laser hitting the device increases, the photogenerated carriers generated by the organic material layer gradually increase, and the device photocurrent increases, simulating that the longer the illumination of the retinal neurons in the body is received, the more awake the person is and the longer the effect lasts.

[0032] Figure 5 This is a test graph of the photocurrent response of the two-dimensional organic / inorganic heterojunction optoelectronic neuron device prepared in Example 1 under different light intensities; from the graph, it can be seen that 1 nW / μm 2 The photogenerated carriers under dark light are very few. When the light power density is increased to 1000 nW / μm 2 As mentioned above, the number of photogenerated carriers increases significantly, and the device photocurrent increases, simulating the enhanced light stimulation received by retinal neurons in the body, leading to a decrease in human melatonin and thus increased human alertness.

[0033] In low light and strong light, the gate voltage was used to simulate dark adaptation and light adaptation. The results are shown in Figure 6 , the time-current curves from left to right reflect how the gate voltage is used to control the adaptive change from dark to bright under different lighting conditions. When continuous laser irradiation is applied, the gate voltage control is dominant; when the light is strong, the current under the positive gate voltage decreases, while when the light is weak, the current under the negative gate voltage increases. The corresponding current changes are similar to the process in which the intrinsic photosensitive ganglion cells of the retina transmit signals to the olivary prefrontal nucleus, and then negative feedback is performed to control the pupil contraction or dilation to adapt to the light intensity.

[0034] Example 2: Preparation of two-dimensional organic / inorganic heterojunction optoelectronic neuron device array

[0035] Based on the steps similar to those in Example 1, multiple pieces of MoS2 material are first transferred to the substrate (the transfer method is the same as in Example 1), and the design pattern of the gold electrode is drawn according to the size of each piece of MoS2 on the substrate and the arrangement gap of multiple pieces of MoS2 on the substrate to ensure that the two-dimensional TMDC material MoS2 is distributed between each group of electrodes; based on the design pattern, the patterned gold electrode is plated on the MoS2 / substrate structure using an electron beam lithography instrument, and the minimum parallel spacing between two strip-shaped gold films corresponding to the same device is 5 μm. Then, a single layer of Me-PTCDI crystal is grown on MoS2 using the same method as step 6) in Example 1 to obtain a two-dimensional organic / inorganic heterojunction optoelectronic neuron device array.

[0036] Figure 7 This is a microscope photo of the neuron device array prepared in this embodiment. From the picture, it can be seen that the array contains 30 devices of 5*6, each device includes two symmetrical yellow gold electrodes, and the organic layer and the inorganic material layer underneath it are located between the channels. The integration of multiple devices is realized on a substrate, and the gate voltage can be adjusted simultaneously, and the test is efficient and centralized.

[0037] Figure 8 This is a schematic diagram of the process of self-adaptation and pattern perception of the neuron device array prepared in this embodiment. Arrow pattern recognition is performed under dim light conditions, and negative gate voltage is applied to all discrete devices, wherein weak light is applied to the devices corresponding to the arrow graphic position, and weaker light is applied to other devices corresponding to the background position to simulate an extremely dark environment. Different devices in the array can be regarded as different pixels, and the gray value represents the current value. The image contrast increases with time, and the recognition rate of the dark-adapted visual system increases from 30% at 2 seconds to 100% at 50 seconds. As time increases, the arrow graphic can be clearly recognized.

[0038] The above shows and describes the basic principles, main features and advantages of the present invention. However, the above is only a specific embodiment of the present invention, and the technical features of the present invention are not limited thereto. Any other implementation methods derived by any technician in the field without departing from the technical solution of the present invention should be included in the scope of the present invention.

Claims

1. A two-dimensional organic / inorganic heterojunction optoelectronic neuron device, characterized in that: It includes a substrate, a two-dimensional TMDC material layer, a thin film electrode and an organic molecule layer; The two-dimensional TMDC material layer is arranged on the substrate. After the thin film electrode is produced on the two-dimensional TMDC material layer by electron beam lithography, the organic molecular layer is epitaxially grown on the two-dimensional TMDC material layer by the inverted method to form a heterojunction to enhance the photosensitivity and light adaptability of the optoelectronic neuron device, which is used to simulate the response of the retinal intrinsic photosensitive ganglion cells under different light conditions.

2. A two-dimensional organic / inorganic heterojunction optoelectronic neuron device as claimed in claim 1, characterized in that: The photoelectric neuron device can make current changes under the stimulation of light pulses, thereby imitating the production and action of human melatonin, and can achieve visual adaptation in bright and dark environments under the regulation of gate voltage.

3. A two-dimensional organic / inorganic heterojunction optoelectronic neuron device as claimed in claim 1, characterized in that: The material of the two-dimensional TMDC material layer is MoS2, and the material forming the organic molecular layer is N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide or 3,4,9,10-perylenetetracarboxylic dianhydride.

4. The application method of the two-dimensional organic / inorganic heterojunction optoelectronic neuron device according to any one of claims 1 to 3, characterized in that: The application method is to apply the two-dimensional organic / inorganic heterojunction optoelectronic neuron device in the field of autonomous driving.

5. A two-dimensional organic / inorganic heterojunction optoelectronic neuron device array, characterized in that: It comprises several discrete two-dimensional organic / inorganic heterojunction optoelectronic neuron devices as described in any one of claims 1 to 2. Several discrete optoelectronic neuron devices are assembled on the same substrate and arranged in an array, and gate voltage of several devices can be regulated simultaneously.

6. A method for preparing a two-dimensional organic / inorganic heterojunction optoelectronic neuron device, characterized in that: The steps include: 1) Pre-treating the substrate; 2) Peel off the two-dimensional TMDC material on the blue film, repeatedly stick and tear it apart to form a two-dimensional TMDC material / blue film structure; 3) Lay the PDMS film on a glass slide to obtain a PDMS / glass slide structure; 4) The two-dimensional TMDC material to be transferred is transferred to the PDMS film by mechanical peeling to form a glass slide / PDMS / TMDC structure, and the excess PDMS film is cut off with the two-dimensional TMDC material to be transferred as the center; 5) Fix the glass slide with the two-dimensional TMDC material in the substrate slot of the transfer platform, and place the substrate on the sample holder of the transfer platform; 6) By controlling the rate at which the transfer platform descends to fit and rises to separate, the two-dimensional TMDC material is separated from the PDMS and then attached to the substrate; 7) Using electron beam lithography to deposit thin film electrodes on both ends of the two-dimensional TMDC material layer; 8) Place the organic source material in the center of the tube furnace, place the substrate obtained in the previous step upside down on top of the organic source material, evacuate the chamber, control the heating temperature and time under an inert atmosphere, and complete the device preparation after epitaxially growing a single layer of organic small molecule material crystals on the two-dimensional TMDC material.

7. The method for preparing a two-dimensional organic / inorganic heterojunction optoelectronic neuron device according to claim 6, characterized in that: The two-dimensional TMDC material is MoS2; before transferring the two-dimensional TMDC material onto the PDMS film, the surface of the PDMS film needs to be treated with UV Ozone for 5 minutes.

8. The method for preparing a two-dimensional organic / inorganic heterojunction optoelectronic neuron device according to claim 6, characterized in that: The 2D TMDC material transferred onto the PDMS film is uniform, bubble-free, 0.7 nm thick, and a single layer; When transferring the two-dimensional TMDC material, the glass slide is lowered at a constant speed of 0.1 μm every 5 s so that the two-dimensional TMDC material is attached to the target substrate. The attached state is maintained for 30 s to 3 min, and then the glass slide is lifted at a constant speed of 0.1 μm every 5 s so that the two-dimensional TMDC material is completely transferred to the target substrate.

9. The method for preparing a two-dimensional organic / inorganic heterojunction optoelectronic neuron device according to claim 6, characterized in that: In step 7), the parallel channel spacing between the two thin film electrodes prepared by electron beam lithography is 5 μm.

10. The method for preparing a two-dimensional organic / inorganic heterojunction optoelectronic neuron device according to claim 6, characterized in that: In step 8), the organic source material is N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide or 3,4,9,10-perylenetetracarboxylic dianhydride; the tubular furnace is heated at a temperature of 190-290°C for a heating time of 15-30 min to evaporate the organic source material to epitaxially grow a single layer of organic small molecule material crystals on the two-dimensional TMDC material.

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