Active gas generating device

Abstract

The purpose of the present invention is to provide an active gas generation device capable of supplying a uniform active gas to a processing space. An electrode unit (55) in an active gas generation device (75) is provided with a ground conductor (60) provided below a ground-side electrode constituting part (E2). A housing bottom (1a) of a housing (1) has a housing opening (41), and the housing opening (41) includes a lower tapered region (41t) and an upper region (41a), the opening area of the lower tapered region (41t) increasing downward. A plurality of gas ejection ports (70) provided in a ground conductor (60) are provided so as to approach each other as the gas ejection ports face downward, so that a plurality of localized active gases collide in a collision region (80) that is present in a lower tapered region (41t) or in an upper region (41a) that is higher than the lower tapered region (41t).

Description

Technical Field

[0001] The present invention relates to an active gas generating device having a parallel plate electrode structure and utilizing dielectric barrier discharge to generate active gas. Background Art

[0002] In a conventional active gas generating device having a parallel plate electrode structure and utilizing dielectric barrier discharge, a discharge space is formed by a gap between opposing metal electrodes (conductive films for electrodes) and dielectric films (dielectric films for electrodes), or a gap between opposing dielectric films.

[0003] Conventional active gas generating devices use parallel plate dielectric barrier discharge to generate a dielectric barrier discharge in a discharge space, thereby activating a raw material gas introduced into the discharge space to generate active gas.

[0004] As an active gas generating device that uses parallel plate dielectric barrier discharge, there is an active gas generating device disclosed in Patent Document 1, for example.

[0005] Regarding active gas, generally speaking, the life of active gas (the time that active gas maintains high reactivity) is short, and it is necessary to supply the space where active gas is used in a short time. In addition, active gas will also be deactivated by collision with other substances, so it is not preferred to supply the space where active gas is used through a curved pipe or the like.

[0006] Therefore, in a processing space using active gas, when the processing object (the object to which the active gas is sprayed) is large, a first improved structure in which a plurality of gas nozzles are arranged at a position relatively close to the processing space using active gas, a second improved structure in which a plurality of discharge spaces corresponding to the plurality of gas nozzles are provided, etc. are adopted in the existing active gas generating device.

[0007] Prior art literature

[0008] Patent Literature

[0009] Patent Document 1: International Publication No. 2019 / 138456 Summary of the invention

[0010] Problems to be solved by the invention

[0011] The first improved structure adopts a method of providing a plurality of gas ejection ports for one dielectric film. However, the active gas ejected from the plurality of gas ejection ports has basically only one directionality, so there is a problem that the active gas cannot be uniformly supplied to the processing space in which the processing object is placed.

[0012] The second improved structure also has a problem that, similar to the first improved structure, the active gas ejected from each of the plurality of gas ejection ports has basically only one directionality, and therefore, the active gas cannot be uniformly supplied to the processing space.

[0013] An object of the present invention is to provide an active gas generating device that solves the above-mentioned problems and can supply a uniform active gas to a processing space.

[0014] Means for solving problems

[0015] The active gas generating device of the present invention is a device for generating active gas by activating raw material gas supplied to a discharge space, and comprises: an electrode unit; and a shell having conductivity, wherein the electrode unit is accommodated in a shell inner space, wherein the shell has a shell bottom including a flat surface and a conductor accommodation space recessed from the flat surface in a depth direction, wherein the electrode unit comprises: a first electrode constituting part; a second electrode constituting part arranged below the first electrode constituting part; and a reference potential conductor arranged below the second electrode constituting part and accommodated in the conductor accommodation space, wherein the first electrode constituting part comprises a first electrode dielectric film and a first electrode conductive film formed on an upper surface of the first electrode dielectric film The second electrode forming part includes a second electrode dielectric film and a second electrode conductive film formed on the lower surface of the second electrode dielectric film, the upper part of the reference potential conductor has a buffer space for active gas, the second electrode forming part is configured to block the buffer space for active gas, the second electrode dielectric film has a dielectric through-hole penetrating the second electrode dielectric film in a region overlapping with the buffer space for active gas when viewed from above, the second electrode conductive film has a conductive film opening in a region overlapping with the buffer space for active gas when viewed from above, the conductive film opening overlaps with the dielectric through-hole when viewed from above, the first electrode dielectric film and the second electrode dielectric film The opposing space is defined as a main dielectric space, the discharge space includes a region where the first and second electrode conductive films overlap in a plan view, namely, the main discharge space, in the main dielectric space, an AC voltage is applied to the first electrode conductive film, and the second electrode conductive film is set to a reference potential via the shell and the reference potential conductor, the active gas generating device further includes a plurality of gas ejection ports, the plurality of gas ejection ports are respectively provided from the bottom surface of the active gas buffer space to penetrate the reference potential conductor, the plurality of gas ejection ports do not overlap with the dielectric through-hole in a plan view, and the discharge space includes, in addition to the main discharge space, the dielectric through-hole The shell bottom of the shell has a shell opening in the area overlapping with the buffer space for active gas when viewed from above, and the multiple local active gases are guided downward through the shell opening, and the shell opening includes a conical area in a conical shape whose opening area increases as it goes downward, and the multiple gas ejection ports are arranged in a manner that approaches each other as they go downward so that the multiple local active gases collide in a collision area, and the collision area exists in the conical area or above the conical area.

[0016] Effects of the Invention

[0017] The plurality of gas ejection ports in the active gas generating device of the present invention have the above-mentioned features. Therefore, a plurality of local active gases collide in the collision region, and thus the flow direction of each of the plurality of local active gases is dispersed from one direction to a plurality of diffusion directions.

[0018] Since the collision region exists within the tapered region or above the tapered region, the plurality of local active gases that have diffused flow in a direction along the tapered shape of the tapered region as they go downward.

[0019] Therefore, the active gas including the plurality of local active gases flows from the tapered region toward the processing space below while diffusing in the direction along the tapered shape. As a result, the active gas generating device of the present invention can supply uniform active gas to the processing space.

[0020] The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a top view schematically showing the planar structure of the active gas generating device according to Embodiment 1 of the present invention.

[0022] Figure 2 Yes means Figure 1 A cross-sectional view of the cross-sectional structure of the AA section.

[0023] Figure 3 This is an explanatory diagram schematically showing a planar structure of an electrode unit (part 1).

[0024] Figure 4 Yes means Figure 3 An explanatory diagram of the cross-sectional structure of the BB cross section.

[0025] Figure 5 This is an explanatory diagram schematically showing the planar structure of the electrode unit (part 2).

[0026] Figure 6 Yes means Figure 5 An explanatory diagram of the cross-sectional structure of the CC cross section.

[0027] Figure 7 It is an explanatory diagram schematically showing the planar structure of the casing.

[0028] Figure 8 It is an explanatory diagram schematically showing the cross-sectional structure of the casing.

[0029] Fig. 9 It is an explanatory diagram schematically showing the planar structure of the high-voltage side dielectric film.

[0030] Fig.10It is an explanatory diagram schematically showing the cross-sectional structure of a high-voltage-side dielectric film.

[0031] Fig.11 It is an explanatory diagram schematically showing a planar structure of a ground-side dielectric film.

[0032] Fig.12 It is an explanatory diagram schematically showing the cross-sectional structure of the ground-side dielectric film.

[0033] Fig.13 It is an explanatory diagram schematically showing the planar structure of the power supply body.

[0034] Fig.14 It is an explanatory diagram schematically showing the cross-sectional structure of the power supply body.

[0035] Fig.15 It is an explanatory diagram schematically showing a planar structure of a ground conductor.

[0036] Fig.16 It is an explanatory diagram schematically showing a cross-sectional structure of a ground conductor.

[0037] Fig.17 Yes means Fig.16 An illustration of the details of the area of ​​interest.

[0038] Fig.18 It is an explanatory diagram schematically showing a planar structure of a cap dielectric film.

[0039] Fig.19 It is an explanatory diagram schematically showing a cross-sectional structure of a cap dielectric film.

[0040] Fig. 20 It is an explanatory diagram schematically showing the planar structure of the ground-side electrode configuration section.

[0041] Fig.21 It is an explanatory diagram schematically showing the cross-sectional structure of a ground-side electrode configuration portion.

[0042] Fig. 22 It is an explanatory diagram schematically showing a planar structure of a shield dielectric film.

[0043] Fig.23 It is an explanatory diagram schematically showing a cross-sectional structure of a shield dielectric film.

[0044] Fig.24 It is an explanatory diagram schematically showing a planar structure of a dielectric film supporting member.

[0045] Fig.25 It is an explanatory diagram schematically showing a cross-sectional structure of a dielectric film supporting member.

[0046] Fig.26 It is an explanatory diagram schematically showing a planar structure of a dielectric film pressing member.

[0047] Fig. 27 It is an explanatory diagram schematically showing a cross-sectional structure of a dielectric film pressing member.

[0048] Fig.28 It indicates schematically Fig. 27 An illustration of the details of the area of ​​interest.

[0049] Fig.29 It is an explanatory diagram schematically showing the planar structure of the pressing member.

[0050] Fig.30 It is an explanatory diagram schematically showing a cross-sectional structure of a pressing member.

[0051] Fig.31 This is an explanatory diagram schematically showing the ejection form of the active gas from the electrode unit in the active gas generating device according to the first embodiment.

[0052] Fig.32 This is an explanatory diagram schematically showing an ideal ejection form of active gas in the electrode unit according to the first embodiment.

[0053] Fig.33 This is an explanatory diagram showing the cross-sectional structure of an electrode unit in the active gas generating device according to the second embodiment.

[0054] Fig.34 This is an explanatory diagram schematically showing the structure of a ground conductor according to the second embodiment (part 1).

[0055] Fig.35 This is an explanatory diagram schematically showing the structure of the ground conductor according to the second embodiment (part 2).

[0056] Fig.36 This is an explanatory diagram schematically showing the cross-sectional structure of a plurality of gas ejection ports in the second embodiment (part 1).

[0057] Fig.37 This is an explanatory diagram schematically showing the cross-sectional structure of a plurality of gas ejection ports in the second embodiment (part 2).

[0058] Fig.38 This is an explanatory diagram (part 1) showing the ejection form of the active gas in the case opening of the electrode unit according to the second embodiment.

[0059] Fig.39 This is an explanatory diagram (part 2) showing the ejection form of the active gas in the case opening of the electrode unit according to the second embodiment.

[0060] Fig.40 This is an explanatory diagram (part 3) showing the ejection form of the active gas in the case opening of the electrode unit according to the second embodiment.

[0061] Fig.41 This is an explanatory diagram (No. 4) showing the ejection form of the active gas in the case opening of the electrode unit according to the second embodiment. DETAILED DESCRIPTION

[0062] <Implementation method 1>

[0063] Figure 1 It is a plan view schematically showing the planar structure of the active gas generating device 71 according to the first embodiment of the present invention.

[0064] As shown in the figure, in the active gas generating device 71, three electrode units 51 to 53 are accommodated in the housing 1. The raw material gas G1 is supplied to each of the electrode units 51 to 53 through the gas flow path 21. Then, each of the electrode units 51 to 53 activates the raw material gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0065] Figure 2 Yes means Figure 1 A cross-sectional view of the cross-sectional structure of the AA section. Figure 3 to Figure 6 1 is an explanatory diagram partially explaining the structure of the electrode unit 50. The electrode unit 50 corresponds to any one of the electrode units 51 to 53. The electrode units 51 to 53 have the same structure as each other.

[0066] Figure 3 It is an explanatory diagram schematically showing the planar structure of the electrode unit 50 . Figure 4 Yes means Figure 3 An explanatory diagram of the cross-sectional structure of the BB cross section. Figure 3 as well as Figure 4 This is a first explanatory diagram showing the structure of the ground conductor 6 and its surroundings.

[0067] Figure 5 It is an explanatory diagram schematically showing the planar structure of the electrode unit 50 . Figure 6 Yes means Figure 5 An explanatory diagram of the cross-sectional structure of the CC cross section. Figure 5 as well as Figure 6 This is a second explanatory diagram showing the detailed structure of the ground conductor 6 and its periphery.

[0068] Figure 7 to Figure 30 It is an explanatory diagram showing the details of the components of the electrode unit 50 . Figure 7 as well as Figure 8 It is an explanatory diagram schematically showing the structure of the casing 1. Figure 7 It represents the plane structure of the housing 1, Figure 8 The cross-sectional structure of the housing 1 is shown.

[0069] Fig. 9 as well as Fig.10 Each of them is an explanatory diagram schematically showing the structure of the high-voltage-side dielectric film 2 . Fig. 9 represents the planar structure of the high-voltage side dielectric film 2, Fig.10 The cross-sectional structure of the high-voltage-side dielectric film 2 is shown.

[0070] Fig.11 as well as Fig.12 Each of them is an explanatory diagram schematically showing the structure of the ground-side dielectric film 3 . Fig.11 : represents the planar structure of the ground side dielectric film 3, Fig.12 The cross-sectional structure of the ground-side dielectric film 3 is shown.

[0071] Fig.13 as well as Fig.14 Each of them is an explanatory diagram schematically showing the structure of the power supply body 5. Fig.13 : represents the planar structure of the power supply body 5, Fig.14 The cross-sectional structure of the power supply body 5 is shown.

[0072] Figure 15 to Figure 17 Each of them is an explanatory diagram schematically showing the structure of the ground conductor 6 . Fig.15 : represents the planar structure of the ground conductor 6, Fig.16 : shows the cross-sectional structure of the ground conductor 6, Fig.17 express Fig.16 Details of the focus area R1.

[0073] Fig.18 as well as Fig.19 Each of them is an explanatory diagram schematically showing the structure of the cap dielectric film 8 . Fig.18 8 shows the planar structure of the cover dielectric film 8, Fig.19 The cross-sectional structure of the cap dielectric film 8 is shown.

[0074] Fig. 20 as well as Fig.21 Each of them is an explanatory diagram schematically showing the structure of the ground-side electrode configuration portion E2. Fig. 20 : shows the planar structure of the ground-side electrode component E2, Fig.21 FIG. 2 shows a cross-sectional structure of the ground-side electrode configuration portion E2 . The ground-side electrode configuration portion E2 includes a combined structure of the ground-side dielectric film 3 , the conductive film 7 , and the cover dielectric film 8 .

[0075] Fig. 22 as well as Fig.23 Each of them is an explanatory diagram schematically showing the structure of the shield dielectric film 9 . Fig. 22 : represents the planar structure of the shielding dielectric film 9, Fig.23 The cross-sectional structure of the shield dielectric film 9 is shown.

[0076] Fig.24 as well as Fig.25 Each of them is an explanatory diagram schematically showing the structure of the dielectric film supporting member 10 . Fig.24 1 shows the planar structure of the dielectric film support member 10, Fig.25 The cross-sectional structure of the dielectric film supporting member 10 is shown.

[0077] Figure 26 to Figure 28 Each of them is an explanatory diagram schematically showing the structure of the dielectric film pressing member 11 . Fig.26 1 shows the planar structure of the dielectric film pressing member 11, Fig. 27 1 shows the cross-sectional structure of the dielectric film pressing member 11. Fig.28 express Fig. 27 Details in the focus area R2.

[0078] Fig.29 as well as Fig.30 Each of them is an explanatory diagram schematically showing the structure of the pressing member 12 . Fig.29 1 shows the planar structure of the pressing member 12. Fig.30 The cross-sectional structure of the pressing member 12 is shown.

[0079] in addition, Figures 1 to 30 The active gas generating device 71, the electrode unit 50, or the components of the electrode unit 50 are schematically shown, and the shapes including the scale are shown in FIG. Figures 1 to 30 are not necessarily consistent. Figures 1 to 30 The XYZ orthogonal coordinate systems are recorded respectively.

[0080] Hereinafter, reference will be made to the above Figures 1 to 30 The active gas generating device 71 according to the first embodiment will be described.

[0081] (Overall structure)

[0082] like Figure 1 As shown, the active gas generating device 71 includes: electrode units 51 to 53 as a plurality of electrode units; and a housing inner space S1 (see Figure 8 ) A housing 1 that accommodates the electrode units 51 to 53 and has conductivity.

[0083] like Figure 2 as well as Figure 7 As shown, the housing 1 has a housing bottom 1 a including a flat surface 1F and a conductor housing space 6S recessed in a depth direction from the flat surface 1F.

[0084] like Figure 8 As shown, the housing 1 includes a housing bottom 1a, a housing side 1b, and a housing top 1c, and the housing bottom 1a, the housing side 1b, and the housing top 1c form a housing inner space S1 for accommodating the electrode units 51 to 53 therein.

[0085] The electrode units 51 to 53 are housed in the housing inner space S1 of the housing 1 in such a manner that the ground conductor 6 is disposed in the conductor housing space 6S. Figure 7 As shown, the source gas G1 supplied from the outside is supplied to the source gas flow space provided on the lower surface and the side surface of the ground conductor 6 arranged in the conductor accommodating space 6S via the gas flow path 21 provided in the housing bottom 1a.

[0086] The electrode unit 51 ( 50 ) includes a high-voltage-side electrode configuration portion E1 as a first electrode configuration portion, and a ground-side electrode configuration portion E2 as a second electrode configuration portion provided below the high-voltage-side electrode configuration portion E1 .

[0087] The electrode unit 51 further includes a ground conductor 6 as a reference potential conductor, which is provided below the ground-side electrode configuration section E2 as the second electrode configuration section and is accommodated in the conductor accommodation space 6S. The ground conductor 6 is made of a conductive material such as metal.

[0088] The high-voltage-side electrode configuration part E1 as the first electrode configuration part includes a high-voltage-side dielectric film 2 as the first electrode dielectric film, and a power feeder 5 as the first electrode conductive film formed on the upper surface of the high-voltage-side dielectric film 2. In addition, the power feeder 5 as the first electrode conductive film is provided on a power feeder placement recess 28 provided in the center of the high-voltage-side dielectric film 2 as the first electrode dielectric film.

[0089] The high-voltage-side dielectric film 2 is made of a dielectric material, and the power supply body 5 is made of a conductor such as a metal. For example, the power supply body 5 is made of metal.

[0090] The ground-side electrode forming part E2 includes a ground-side dielectric film 3 as a second electrode dielectric film and a conductive film 7 as a second electrode conductive film formed on the lower surface of the ground-side dielectric film 3. In addition, the conductive film 7 is thin, so that Figure 2 The illustration is omitted in the Fig. 20 as well as Fig.21 The formation region of the conductive film 7 is shown in FIG.

[0091] The ground-side dielectric film 3 is made of a dielectric material, and the conductive film 7 is made of a conductor such as a metal.

[0092] The ground conductor 6 as the reference potential conductor has a non-through active gas buffer space 68 at the top, and the ground-side electrode component E2 is arranged to block the active gas buffer space 68. Therefore, outside the active gas buffer space 68, the lower surface of the conductive film 7 is in contact with the upper surface of the ground conductor 6.

[0093] The ground side dielectric film 3 serving as a dielectric film for the second electrode has a dielectric through-hole 3h penetrating the ground side dielectric film 3 in an area overlapping with the buffer space 68 for active gas when viewed from above. The conductive film 7 serving as a conductive film for the second electrode has a conductive film opening 7h in an area overlapping with the buffer space 68 for active gas when viewed from above. The conductive film opening 7h overlaps with the dielectric through-hole 3h when viewed from above.

[0094] The housing bottom 1a of the housing 1 has a gas flow path 21 for receiving the raw material gas G1 from the outside, and a raw material gas flow space is provided between the ground conductor 6 and the conductor storage space 6S of the housing 1. As described later, the raw material gas flow space includes a raw material gas buffer space 61, a slit space 62, and a side space 63.

[0095] The raw material gas G1 is guided to the main discharge space of the discharge space 4 through the gas flow path 21 and the raw material gas flow space. As described later, the main discharge space refers to the discharge space 4 in the dielectric space 18 between the high-voltage side dielectric film 2 and the ground side dielectric film 3.

[0096] The AC voltage applied from the AC power source 15 is applied to the power supply 5 as the first electrode conductive film via electrical wiring, lead-in terminals and other electrical connection means. Figure 2 The illustration of the electrical connection mechanism is omitted.

[0097] On the other hand, the housing 1 is set to a ground potential as a reference potential. Therefore, the conductive film 7 as the second electrode conductive film is set to a ground potential via the housing 1 and the ground conductor 6 .

[0098] The electrode unit 51 ( 50 ) further includes auxiliary members such as a dielectric film supporting member 10 , a dielectric film pressing member 11 , and a pressing member 12 .

[0099] (Fixing of High-Voltage-Side Dielectric Film 2)

[0100] The step portion 102 of the dielectric film support member 10 has an upper surface which is provided on the flat surface 1F of the housing 1 and serves as a support surface 10F for supporting the high-voltage side dielectric film 2 from below. At this time, the dielectric film support member 10 is arranged on the flat surface 1F so that the side surface of the dielectric film support member 10 coincides with the side surface of the conductor housing space 6S of the housing bottom 1a of the housing 1.

[0101] The dielectric film pressing member 11 is a member for pressing the high-side dielectric film 2 from above and does not overlap with the power feeder 5 in a plan view. That is, an exposed area EX2 where the dielectric film pressing member 11 and the power feeder 5 are not formed exists on the upper surface of the high-side dielectric film 2.

[0102] like Figure 6 , Fig. 27 as well as Fig.28 As shown, the lower surface of the dielectric film pressing member 11 has a dielectric contact area 112 in contact with the upper surface of the high-voltage side dielectric film 2 and a dielectric non-contact area 111 not in contact with the upper surface of the high-voltage side dielectric film 2. The dielectric contact area 112 is a region that is in contact with the high-voltage side dielectric film 2 and applies a load, and the dielectric non-contact area 111 is a region that has no contact relationship with the high-voltage side dielectric film 2 and protrudes toward the power supply body 5 side on the upper surface of the high-voltage side dielectric film 2.

[0103] The dielectric contact region 112 overlaps with the peripheral region of the high-voltage-side dielectric film 2 and the support surface 10F of the dielectric film support member 10 when viewed from above, and the dielectric non-contact region 111 overlaps with the middle region that is inside the peripheral region of the high-voltage-side dielectric film 2 when viewed from above. That is, the middle region is a region adjacent to the power supply body 5 side from the peripheral region of the high-voltage-side dielectric film 2.

[0104] The dielectric film pressing member 11 is made of metal or the like and has conductivity, and is set to a ground potential as a reference potential via the housing 1, the mounting bolts 31, and the pressing member 12. The mounting bolts 31 and the pressing member 12 also have conductivity.

[0105] Therefore, the high-voltage-side dielectric film 2 is pressed from above by the dielectric film pressing member 11 in the dielectric contact region 112. Hereinafter, the combined structure of the dielectric film supporting member 10, the dielectric film pressing member 11, and the pressing member 12 will be described in detail.

[0106] like Figure 2 As shown, the pressing member 12 is arranged on the upper surface of the dielectric film support member 10 , and the pressing member 12 and the dielectric film support member 10 are fixed to the case bottom 1 a of the case 1 by mounting bolts 31 .

[0107] like Fig.24 as well as Fig.25 As shown, the dielectric film support member 10 is circular with a central opening 100 in the center when viewed from above. A step structure consisting of a step portion 102 and a peripheral portion upper surface 101 is provided in an annular shape around the central opening 100. The upper surface of the step portion 102 serves as a support surface 10F. A plurality of through-holes 10h are discretely provided in a circular shape on the peripheral portion upper surface 101 on the outer peripheral side of the step portion 102 (support surface 10F).

[0108] On the other hand, Fig. 9 as well as Fig.10As shown, the high-voltage side dielectric film 2 is circular in plan view with a power supply arrangement recess 28 in the center. A peripheral surface area 27 is provided in a circular ring shape around the power supply arrangement recess 28. In addition, the high-voltage side dielectric film 2 has a circular recess bottom surface 26 in plan view, and the bottom surface around the recess bottom surface 26 becomes a convex bottom surface 23 in a circular ring shape in plan view.

[0109] like Fig.13 as well as Fig.14 As shown, the power feeder 5 has a cylindrical shape and is arranged on the upper surface of the high-voltage-side dielectric film 2 so that the bottom surface of the power feeder 5 is located on the power feeder arrangement recess 28 of the high-voltage-side dielectric film 2 .

[0110] An AC voltage is applied from an AC power source 15 to the power supply 5 as the first electrode conductive film. Figure 5 As shown, the power supply arrangement recess 28 includes the power supply 5 in a plan view and has a planar shape slightly larger than the power supply 5 .

[0111] The high-side dielectric film 2 is disposed on the dielectric film support member 10 so that the support surface 10F of the dielectric film support member 10 contacts the bottom surface 23 of the convex portion of the high-side dielectric film 2. The high-side dielectric film 2 contacts the dielectric film support member 10 via a sealing material such as an O-ring (not shown).

[0112] In addition, if Fig.26 as well as Fig. 27 As shown, the dielectric film pressing member 11 is circular with a central opening 110 in the center when viewed from above. The annular lower surface area provided on the outer peripheral side of the central opening 110 is a dielectric non-contact area 111, and the annular lower surface area provided on the outer peripheral side of the dielectric non-contact area 111 is a dielectric contact area 112.

[0113] like Fig.28 As shown, the dielectric contact region 112 protrudes downward (in the -Z direction) than the dielectric non-contact region 111 and is in contact with the upper surface U2 of the high-voltage-side dielectric film 2. On the other hand, there is a gap SP11 between the dielectric non-contact region 111 and the upper surface U2 of the high-voltage-side dielectric film 2, so it does not contact the upper surface U2 of the high-voltage-side dielectric film 2.

[0114] like Fig.29 as well as Fig.30 As shown, the pressing member 12 is circular in plan view with a central opening 120 in the center. In the outer peripheral area 125 on the outer peripheral side of the central opening 120, a plurality of inner through-holes 121h are discretely arranged in a circular shape, and on the outer peripheral side of the plurality of inner through-holes 121h, a plurality of outer through-holes 122h are discretely arranged in a circular shape.

[0115] Thus, a plurality of inner through-holes 121h and a plurality of outer through-holes 122h are provided in the outer peripheral region 125 of the pressing member 12. The plurality of inner through-holes 121h are respectively formed into through-holes for tapping.

[0116] A portion of the outer peripheral region 125 of the pressing member 12 of the above-mentioned structure is placed on the dielectric film supporting member 10, and the dielectric film supporting member 10 and the pressing member 12 are fixed to the housing bottom 1a of the housing 1 by a plurality of mounting bolts 31. The threaded portions of the plurality of mounting bolts 31 penetrate through the plurality of outer through-holes 122h and the plurality of through-holes 10h and are mounted on the housing bottom 1a.

[0117] like Figure 2 to Figure 6 As shown, the pressing member 12 is arranged in a region overlapping the dielectric film supporting member 10 and the dielectric film pressing member 11 in a plan view.

[0118] On the other hand, a plurality of pressing auxiliary members 32 are mounted on the pressing member 12 so as to penetrate through the plurality of inner through holes 121h of the pressing member 12. As the pressing auxiliary members 32, bolts, fixing screws, etc. can be considered. The plurality of pressing auxiliary members 32 are mounted in the plurality of inner through holes 121h so as to press the dielectric film pressing member 11 through the plurality of pressing auxiliary members 32. The plurality of pressing auxiliary members 32 are provided at positions overlapping with the dielectric contact region 112 of the dielectric film pressing member 11 and the bottom surface 23 of the convex portion of the high-voltage side dielectric film 2 in a plan view.

[0119] Therefore, the high-voltage-side dielectric film 2 is pressed from the upper dielectric contact region 112 by the dielectric film pressing member 11 receiving the pressing force of the plurality of auxiliary pressing members 32 .

[0120] As described above, in the electrode unit 50 of the active gas generating device 71 of the first embodiment, the high-voltage-side dielectric film 2 as the first electrode dielectric film is pressed from the upper dielectric contact region 112 by the dielectric film pressing member 11 receiving the pressing force of the plurality of pressing auxiliary members 32. Therefore, the region where the load is applied to the high-voltage-side dielectric film 2 by the dielectric film pressing member 11 can be limited to only the region below the dielectric contact region 112.

[0121] As a result, the active gas generating device 71 of the first embodiment can stably fix the high-side dielectric film 2 between the dielectric contact region 112 of the dielectric film pressing member 11 and the supporting surface 10F of the dielectric film supporting member 10 without applying unnecessary bending stress to the high-side dielectric film 2.

[0122] The dielectric film pressing member 11 is set to a ground potential as a reference potential and has conductivity. The dielectric non-contact region 111 of the dielectric film pressing member 11 overlaps with the middle region of the high-voltage-side dielectric film 2 in a plan view.

[0123] Therefore, the electrode unit 50 can reduce the potential of the middle area of ​​the high-voltage side dielectric film 2 by relaxing the electric field strength of the power supply 5 through the dielectric film pressing component 11 having the dielectric non-contact area 111, thereby reducing the potential in the outer diameter direction between the high-voltage side dielectric film 2 and the ground side dielectric film 3.

[0124] As a result, the electrode unit 50 in the active gas generating device 71 of the first embodiment can reliably prevent insulation breakdown in the gap 20 between the high-voltage-side dielectric film 2 and the dielectric film supporting member 10 .

[0125] (Ground conductor 6)

[0126] like Figure 15 to Figure 17 As shown, the ground conductor 6 accommodated in the conductor accommodation space 6S of the housing 1 has a circular shape in a plan view, and has a raw material gas buffer space 61 and a slit space 62 in the end region of the bottom surface.

[0127] The raw gas buffer space 61 is formed into a circular ring shape when flattened. Figure 2 As shown, the raw material gas G1 is connected to the gas flow path 21 , and can be taken into the raw material gas buffer space 61 through the gas flow path 21 .

[0128] A plurality of slit spaces 62 are discretely arranged around the raw gas buffer space 61. Fig.17 As shown, the plurality of slit spaces 62 are respectively connected to the raw material gas buffer space 61 , so that the raw material gas G1 can flow from the raw material gas buffer space 61 to the slit space 62 .

[0129] like Figure 6 as well as Fig.17 As shown, the side space 63 is a gap space between the inner peripheral side surface of the conductor accommodating space 6S and the outer peripheral side surface of the ground conductor 6, and is provided in an annular shape in a plan view.

[0130] The dielectric film support member 10 and the ground conductor 6 have Figure 3 as well as Figure 4 Since the positional relationship is as shown, the source gas G1 passing through the side space 63 is supplied to the lower side region R10 of the dielectric film support member 10 .

[0131] Thus, the raw gas buffer space 61 is provided on the lower surface side of the ground conductor 6 and receives the raw gas G1 through the gas flow path 21. The plurality of slit spaces 62 are provided on the lower surface side of the ground conductor 6 and connected to the raw gas buffer space 61.

[0132] The side space 63 is provided on the side of the ground conductor 6 and is connected to the plurality of slit spaces. As described above, the raw material gas flow space includes the raw material gas buffer space 61 , the plurality of slit spaces 62 , and the side space 63 .

[0133] Therefore, the source gas G1 supplied from the outside to the gas flow path 21 is guided to the discharge space 4 via the source gas buffer space 61 , the slit space 62 , and the side space 63 .

[0134] The plurality of slit spaces 62 are each set to be a narrower space where the raw material gas is less likely to flow than the raw material gas buffer space 61, so that the raw material gas G1 temporarily stays in the raw material gas buffer space 61 and then flows to the plurality of slit spaces 62. That is, the plurality of slit spaces 62 have a coefficient indicating the ease of flow of the raw material gas G1, i.e., conductivity, which is smaller than that of the raw material gas buffer space 61 and the side space 63.

[0135] As a result, active gas generator 71 of Embodiment 1 can spatially uniformly supply source gas G1 to discharge space 4. That is, source gas G1 can be uniformly supplied from the periphery of circular dielectric space 18 toward the center of discharge space 4 in plan view.

[0136] By reducing the conductivity of the slit space 62, the differential pressure between the raw gas buffer space 61 and the side space 63 increases, and the flow rate deviation of the raw gas G1 flowing through the plurality of slit spaces 62 is reduced. Therefore, the raw gas G1 is uniformly supplied toward the discharge space 4. In addition, the flow rate of the raw gas G1 is adjusted by, for example, a mass flow controller (MFC) provided upstream of the gas flow path 21.

[0137] Therefore, if the raw material gas G1 is not uniformly supplied to a general active gas generating device, the time for the raw material gas G1 to pass through the discharge space 4 changes, resulting in a disadvantageous situation that the generation efficiency of the active gas G2 is deteriorated. The active gas generating device 71 of the first embodiment can uniformly supply the raw material gas G1, so the above disadvantageous situation does not occur.

[0138] (Ground-side Electrode Configuration Part E2 and Active Gas Buffer Space 68)

[0139] As described above, the ground-side electrode configuration portion E2 as the second electrode configuration portion includes the ground-side dielectric film 3 and the conductive film 7 .

[0140] like Fig.11 as well as Fig.12 As shown, the ground-side dielectric film 3 is circular in a plan view and has a circular dielectric through-hole 3h at the center.

[0141] like Fig.18 as well as Fig.19 As shown in FIG. 1 , the cover dielectric film 8 is circular in a plan view and has a circular cover through-hole 8h in the center. In addition, the cover dielectric film 8 is preferably made of the same constituent material as the ground-side dielectric film 3. The reason for this is to prevent strain from being generated when the thermal expansion coefficients of the cover dielectric film 8 and the ground-side dielectric film 3 are different. In addition, materials with similar thermal expansion coefficients may be selected as the materials of the cover dielectric film 8 and the ground-side dielectric film 3.

[0142] like Fig. 20 as well as Fig.21 As shown, the conductive film 7 is circular in a plan view, and has a conductive film opening 7h in a circular shape in a plan view at the center.

[0143] The dielectric through hole 3h and the conductive film opening 7h overlap with the active gas buffer space 68 in a plan view. Fig.21 As shown in FIG. 1 , the conductive film opening 7h includes the dielectric through-hole 3h in a plan view and has a shape larger than the dielectric through-hole 3h.

[0144] The conductive film 7 is provided on the lower surface of the ground-side dielectric film 3 so that the center positions of the ground-side dielectric film 3 and the conductive film 7 are aligned. The diameter of the conductive film 7 is set to be approximately the same as the diameter of the ground-side dielectric film 3, and since a conductive film opening 7h larger than the dielectric through-hole 3h is provided at the center, the formation area of ​​the conductive film 7 is smaller than the formation area of ​​the ground-side dielectric film 3.

[0145] The conductive film inner boundary 7e, which is the circumferential outer line of the conductive film opening 7h, becomes the end of the conductive film 7 on the dielectric through-hole 3h side, and the conductive film 7 is not formed in the area inside the conductive film inner boundary 7e. The conductive film inner boundary 7e becomes the electrode boundary line of the conductive film 7. Fig.21 As shown, the formation region A7 of the conductive film 7 on the lower surface of the ground-side dielectric film 3 is a region from the outer peripheral position of the ground-side dielectric film 3 to the inner boundary 7e of the conductive film.

[0146] like Fig. 20 as well as Fig.21 As shown in FIG. 1 , the cover dielectric film 8 is provided in a circular shape from the lower surface of the ground-side dielectric film 3 to the lower surface of the conductive film 7, including the inner boundary 7e of the conductive film. However, the cover dielectric film 8 has a cover through-hole 8h at the center. That is, the outer diameter of the conductive film opening 7h of the conductive film 7 is shorter than the outer diameter of the cover dielectric film 8.

[0147] The cover through-hole 8h has a shape similar to that of the dielectric through-hole 3h, and is included in the conductive film opening 7h and has a shape smaller than the conductive film opening 7h. Therefore, the cover dielectric film 8 covers the conductive film inner boundary 7e (electrode boundary line) of the conductive film 7. Then, the lower surface of the conductive film 7 not covered by the cover dielectric film 8 is in contact with the upper surface of the ground conductor 6.

[0148] like Fig.15 as well as Fig.16 As shown, the active gas buffer space 68 provided on the upper portion of the ground conductor 6 is circular in a plan view, and a plurality of gas ejection ports 69 are provided around the bottom surface 65 of the active gas buffer space 68 .

[0149] exist Fig.15 as well as Fig.16 2 and 3 also show the formation region of the cover dielectric film 8. As shown in these figures, the outer peripheral line of the cover dielectric film 8 and the outer peripheral line of the buffer space 68 for active gas are substantially the same.

[0150] like Figure 2 as well as Fig.16 As shown, a shielding dielectric film 9 is provided on the bottom surface 65 of the active gas buffer space 68 .

[0151] like Fig. 22 as well as Fig.23 As shown in FIG. 1 , the shield dielectric film 9 has a predetermined film thickness and is formed in a circular shape in a plan view.

[0152] The barrier dielectric film 9 is provided on the bottom surface 65 of the active gas buffer space 68 so that the center positions of the active gas buffer space 68 and the barrier dielectric film 9 coincide with each other.

[0153] like Fig.15 as well as Fig.16 As shown, the plurality of gas ejection ports 69 overlap with the cover dielectric film 8 in a plan view, and do not overlap with the dielectric through-holes 3h and the cover through-holes 8h in a plan view.

[0154] like Fig.16 As shown, a plurality of gas ejection ports 69 are provided around the bottom surface 65 of the active gas buffer space 68 so as to penetrate the ground conductor 6. That is, a plurality of gas ejection ports 69 are provided around the shield dielectric film 9 in a plan view.

[0155] In the active gas generating device 71 of the first embodiment having such a structure, as described above, the raw material gas G1 is supplied from the outside of the metal casing 2 to the discharge space 4 through the gas flow path 21 and the raw material gas flow space.

[0156] When the discharge space 4 where the dielectric barrier discharge is being generated is supplied with the raw material gas G1, the raw material gas G1 is activated to become the active gas G2, which passes through the dielectric through-hole 3h and the cover through-hole 8h and is introduced into the active gas buffer space 68. The active gas G2 entering the active gas buffer space 68 passes through a plurality of gas ejection ports 69 provided on the bottom surface of the active gas buffer space 68 and is supplied to the subsequent processing space.

[0157] In the active gas generating device 71 of the first embodiment having such a structure, the main dielectric space where the high-voltage side dielectric film 2 as the first electrode dielectric film and the ground side dielectric film 3 as the second electrode dielectric film face each other is the dielectric space 18. The dielectric space 18 is circular in a plan view. In addition, the space where the high-voltage side dielectric film 2 and the shielding dielectric film 9 face each other is defined as an auxiliary dielectric space. The discharge space 4 includes the main discharge space where the current feeder 5 and the conductive film 7 overlap in a plan view in the dielectric space 18.

[0158] In order to form the above-mentioned main discharge space, the high-voltage side dielectric film 2 and the ground-side dielectric film 3 are correspondingly arranged in a manner of forming a certain distance in the height direction (Z direction), and the above-mentioned main discharge space of the discharge space 4 exists in the dielectric space 18 between the high-voltage side dielectric film 2 and the ground-side dielectric film 3.

[0159] The discharge space 4 further includes an auxiliary discharge space 44 constituted by the dielectric through-hole 3 h , the cover through-hole 8 h , and a part of the active gas buffer space 68 on the shielding dielectric film 9 in the auxiliary dielectric space.

[0160] In the ground conductor 6, the bottom surface area below the bottom surface 65 is used as a ground electrode conductive film set to a ground potential, and a discharge voltage is applied between the power supply 5 receiving the AC voltage from the AC power supply 15 and the ground electrode conductive film, thereby generating the auxiliary discharge space 44.

[0161] As described above, the auxiliary discharge space 44 includes the dielectric through-hole 3h, the cover through-hole 8h, and a part of the active gas buffer space 68. Thus, the discharge space 4 formed in the first embodiment includes the main discharge space in the dielectric space 18 and the auxiliary discharge space 44.

[0162] In the active gas generating device 71 of the first embodiment, the path from the auxiliary discharge space 44 to each of the plurality of gas ejection ports 69 is defined as an active gas flow path.

[0163] In the active gas generating device 71 of the first embodiment, the auxiliary discharge space 44 as a part of the discharge space 4 includes the dielectric through-hole 3h, the cover through-hole 8h, and a part of the active gas buffer space 68. Therefore, the active gas flow path from the auxiliary discharge space 44 to the plurality of gas ejection ports 69 can be suppressed to the minimum required volume, thereby suppressing the deactivation amount of the active gas G2.

[0164] Moreover, the cover dielectric film 8 in the ground side electrode constituting part E2 of the electrode unit 50 is an electrode boundary line covering the conductive film 7 in the buffer space 68 for active gas, that is, the inner boundary 7e of the conductive film, and overlaps with multiple gas ejection ports 69 when viewed from above, thereby being able to suppress the surface deactivation phenomenon in which the active gas G2 disappears as the active gas G2 collides with the conductive film 7.

[0165] As a result, the active gas generating device 71 according to the first embodiment can supply the high-concentration active gas G2 from the plurality of gas ejection ports 69 to the subsequent processing space.

[0166] The electrode unit 50 of the first embodiment has the above-mentioned structure, so that the portion facing the discharge space 4 is composed only of components made of dielectric materials as insulators (high-voltage side dielectric film 2, ground side dielectric film 3, cover dielectric film 8, and shield dielectric film 9). When a metal material faces the discharge, it is easy to ionize, and metal ions are contained in the gas, which becomes a cause of contamination. On the other hand, the dielectric is not easy to ionize even when facing the discharge, so it can prevent contamination from mixing into the gas.

[0167] (Casing opening 41)

[0168] like Figure 2 As shown, the case bottom 1a of the case 1 has a case opening 41. The case opening 41 is provided in a region overlapping with the active gas buffer space 68 in a plan view, and penetrates the case bottom 1a.

[0169] Therefore, the active gas G2 ejected from the plurality of gas ejection ports 69 is guided to the processing space below through the housing opening 41 .

[0170] like Figure 2 As shown in FIG. 1 , the housing opening 41 provided at the housing bottom 1a has an opening area that increases as it goes downward, and as shown in FIG. Figure 2 as well as Figure 7 Shown is a cone shape having a lowermost outer peripheral edge 41L.

[0171] In the active gas generating device 71 of the first embodiment, the case opening 41 provided in the case bottom 1 a of the case 1 has a tapered shape in which the opening area increases downward.

[0172] Therefore, the active gas generating device 71 of the first embodiment can minimize the loss caused by the active gas G2 ejected from the plurality of gas ejection ports 69 colliding with the housing bottom 1 a and can supply high-concentration active gas G2 to the processing space below.

[0173] <Implementation method 2>

[0174] (Problems of Implementation Method 1)

[0175] In the reactive gas generating device 71 of the first embodiment, the reactive gas G2 is supplied from the reactive gas buffer space 68 to the subsequent processing space located below through the plurality of gas ejection ports 69. Hereinafter, the reactive gas G2 from the plurality of gas ejection ports 69 will be described as a plurality of local reactive gases.

[0176] Fig.31 This is an explanatory diagram schematically showing the ejection form of the active gas G2 from the electrode unit 50 ( 51 to 53 ) in the active gas generating device 71 according to the first embodiment. Fig.32 1 is an explanatory diagram schematically showing an ideal discharge state of the active gas G2 in the electrode unit 50 . Fig.31 as well as Fig.32 For example, it is equivalent to Figure 1 The A-A section. Fig.31 as well as Fig.32 The XYZ orthogonal coordinate systems are recorded respectively.

[0177] like Fig.31 As shown, in the electrode unit 50 ( 51 to 53 ) included in the active gas generating device 71 of the first embodiment, the plurality of gas ejection ports 69 are provided so as to be separated from each other as they go downward so as to prevent collision between the plurality of local active gases.

[0178] However, when the spatial pressure p0 of the active gas buffer space 68 is significantly different from the spatial pressure p1 of the subsequent processing space, for example, when {(p1 / p0) < 0.5}, the multiple local active gases ejected from the multiple gas ejection ports 69 are Fig.31 As shown in the gas flow FGX, it becomes a flow in only one direction called a choking flow, and a plurality of local active gases advance linearly without diffusion.

[0179] The active gas generating device 71 of embodiment 1 adopts the following structure: in order to supply uniform active gas G2 to the processing space of the subsequent stage, multiple gas nozzles 69 are set in units of electrode units 50, and in order to supply active gas G2 to the processing space with a relatively large area, multiple electrode units 50 are set as electrode units 51~53.

[0180] However, the plurality of local active gases ejected from each electrode unit 50 are respectively Fig.31 The linear gas flow FGX shown is supplied to the processing space and does not become Fig.32 The gas flow FGY is shown diffusing in multiple directions.

[0181] Thus, the local active gas ejected from the plurality of gas ejection ports 69 of the electrode unit 50 has basically only one directionality. Therefore, similar to the first and second improved structures described in the [Problems to be Solved by the Invention] section, the active gas generating device 71 of the first embodiment still has the problem of being unable to supply the active gas G2 uniformly to the processing space.

[0182] The above-mentioned problems are solved in the active gas generating device 75 according to the second embodiment described below.

[0183] (Structure of Embodiment 2)

[0184] Fig.33 This is an explanatory diagram showing the cross-sectional structure of the electrode unit 55 in the active gas generating device 75 according to the second embodiment.

[0185] The overall structure of the active gas generating device 75 is as follows Figure 1 The structure of the gas generating device 71 shown in FIG. Fig.33 The electrode unit 55 shown is Figure 1 The active gas generating device 75 of the overall structure shown corresponds to any one of the electrode units 51 to 53 .

[0186] That is, the active gas generating device 75 of the second embodiment is similar to the active gas generating device 71 of the first embodiment, and includes the electrode units 51 to 53 as a plurality of electrode units, and a housing inner space S1 (see Figure 8 ) contains the electrode units 51 to 53 and has a conductive shell 1.

[0187] The electrode unit 55 of the second embodiment is characterized in that the ground conductor 6 of the electrode unit 50 of the first embodiment is replaced with a ground conductor 60 .

[0188] Hereinafter, the same components as those of the electrode unit 50 of the first embodiment are denoted by the same reference numerals, and the description will be mainly focused on the characteristic parts of the electrode unit 55 of the fourth embodiment.

[0189] like Fig.33As shown, the electrode unit 55 includes a ground conductor 60 as a reference potential conductor, which is provided below the ground-side electrode configuration portion E2 including the ground-side dielectric film 3 and accommodated in the conductor accommodation space 6S. The ground conductor 60 is made of a conductive material such as metal.

[0190] The electrode unit 55 of the second embodiment is housed in the housing inner space S1 of the housing 1 in such a manner that the ground conductor 60 is arranged in the conductor housing space 6S. The raw material gas G1 supplied from the outside is supplied to the raw material gas flow space provided on the lower surface and the side surface of the ground conductor 60 arranged in the conductor housing space 6S via the gas flow path 21 provided in the housing bottom 1a.

[0191] (Ground conductor 60)

[0192] Fig.34 as well as Fig.35 Each of them is an explanatory diagram schematically showing the structure of the ground conductor 60 . Fig.34 : shows the planar structure of the ground conductor 60, Fig.35 : shows the cross-sectional structure of the ground conductor 60. Fig.34 as well as Fig.35 The XYZ orthogonal coordinate systems are recorded respectively.

[0193] The ground conductor 60 as the reference potential conductor has a non-through active gas buffer space 68 at the upper portion, and the ground-side electrode configuration portion E2 including the ground-side dielectric film 3 is arranged to block the active gas buffer space 68. Therefore, outside the active gas buffer space 68, the lower surface of the conductive film 7 is in contact with the upper surface of the ground conductor 60.

[0194] The housing 1 is set to the ground potential as a reference potential similarly to the first embodiment. Therefore, the conductive film 7 is set to the ground potential via the housing 1 and the ground conductor 60 .

[0195] like Fig.34 As shown, the ground conductor 60 accommodated in the conductor accommodation space 6S of the housing 1 has a circular shape in a plan view, and has a raw material gas buffer space 61 and a slit space 62 in the end region of the bottom surface.

[0196] Similar to the ground conductor 6 of the first embodiment, the ground conductor 60 is provided with a raw material gas flow space including a raw material gas buffer space 61 , a plurality of slit spaces 62 , and a side space 63 .

[0197] Therefore, the source gas G1 supplied from the outside to the gas flow path 21 is guided to the discharge space 4 via the source gas buffer space 61 , the slit space 62 , and the side space 63 .

[0198] Therefore, the active gas generator 75 of the second embodiment can supply the raw material gas G1 to the discharge space 4 spatially uniformly, similarly to the active gas generator 71 of the first embodiment.

[0199] like Fig.34 as well as Fig.35 As shown, the active gas buffer space 68 provided on the upper portion of the ground conductor 60 is circular in a plan view, and a plurality of gas ejection ports 70 are provided around the bottom surface 65 of the active gas buffer space 68 .

[0200] Similar to the plurality of gas ejection ports 69 of the first embodiment, the plurality of gas ejection ports 70 overlap with the cover dielectric film 8 in a plan view, and do not overlap with the dielectric through-hole 3h and the cover through-hole 8h in a plan view.

[0201] like Figure 33 to Figure 35 As shown, a plurality of gas ejection ports 70 are provided around the bottom surface 65 of the active gas buffer space 68 so as to penetrate the ground conductor 60. That is, a plurality of gas ejection ports 70 are provided around the shield dielectric film 9 in a plan view.

[0202] When the raw material gas G1 is supplied to the discharge space 4 where the dielectric barrier discharge is being generated, the raw material gas G1 is activated to become the active gas G2, and is introduced into the active gas buffer space 68 through the dielectric through-hole 3h and the cover through-hole 8h. The active gas G2 entering the active gas buffer space 68 is supplied to the subsequent processing space through a plurality of gas ejection ports 70 provided on the bottom surface of the active gas buffer space 68.

[0203] In the active gas generating device 75 of the second embodiment, the path from the auxiliary discharge space 44 to each of the plurality of gas ejection ports 70 is defined as an active gas flow path.

[0204] In the active gas generating device 75 of the second embodiment, the auxiliary discharge space 44 as a part of the discharge space 4 includes the dielectric through-hole 3h, the cover through-hole 8h, and a part of the active gas buffer space 68. Therefore, the active gas flow path from the auxiliary discharge space 44 to the plurality of gas ejection ports 70 can be suppressed to a necessary minimum volume, thereby suppressing the deactivation amount of the active gas G2.

[0205] Moreover, the cover dielectric film 8 in the ground side electrode constituting part E2 of the electrode unit 55 is an electrode boundary line covering the conductive film 7 in the buffer space 68 for active gas, i.e., the inner boundary 7e of the conductive film, and overlaps with a plurality of gas ejection ports 70 when viewed from above, thereby being able to suppress the surface deactivation phenomenon in which the active gas G2 disappears as the active gas G2 collides with the conductive film 7.

[0206] As a result, similarly to the first embodiment, the active gas generating device 75 of the second embodiment can supply the high-concentration active gas G2 from the plurality of gas ejection ports 70 to the subsequent processing space.

[0207] The housing bottom 1 a of the housing 1 has a housing opening 41 in a region overlapping the active gas buffer space 68 in a plan view. The active gas G2 ejected from the plurality of gas ejection ports 70 is guided to the processing space below through the housing opening 41 .

[0208] In the active gas generating device 75 of the second embodiment, the case opening 41 provided in the case bottom 1 a of the case 1 has a tapered shape in which the opening area increases downward.

[0209] Therefore, similar to the first embodiment, the active gas generating device 75 of the second embodiment can suppress the loss caused by the active gas G2 ejected from the plurality of gas ejection ports 70 colliding with the housing bottom 1 a and can supply relatively high concentration active gas G2 to the processing space below.

[0210] (Plurality of gas outlets 70)

[0211] The active gas G2 ejected from the plurality of gas ejection ports 70 provided in the electrode unit 55 of Embodiment 2 is supplied to the subsequent processing space present below. Here, the active gas ejected from the plurality of gas ejection ports 70 is defined as a plurality of local active gases.

[0212] In the electrode unit 55 of the second embodiment, the plurality of local active gases ejected from the plurality of gas ejection ports 70 are guided downward through the case opening 41 .

[0213] Fig.36 as well as Fig.37 is an explanatory diagram schematically showing a cross-sectional structure of a plurality of gas ejection ports 70. Fig.36 as well as Fig.37 Equivalent to Fig.34 The D-D cross-section structure. Fig.36 as well as Fig.37 The XYZ orthogonal coordinate systems are recorded respectively.

[0214] like Fig.36 as well as Fig.37 As shown, the shell opening 41 includes an upper region 41a having a constant opening area in the height direction (Z direction), and a lower tapered region 41t which is a tapered region whose opening area increases as it goes downward. In the shell opening 41, the lower tapered region 41t is a tapered region arranged below the upper region 41a.

[0215] exist Fig.37, a coordinate position slightly lower than the center position of the boundary line between the upper region 41a and the lower tapered region 41t is indicated as a collision point P80. The collision point P80 exists in a collision region 80 described later and is the center of the collision region 80.

[0216] In the electrode unit 55 of the first embodiment, the plurality of gas ejection ports 70 are provided so as to approach each other as they go downward so that the plurality of local active gases collide at the collision point P80 .

[0217] The structure of the plurality of gas ejection ports 70 will be described in detail below. Fig.36 as well as Fig.37 There are two gas outlets 70 in the figure, but Fig.34 The number of the plurality of gas ejection ports 70 is set to be “3” or more.

[0218] In the following, Fig.36 as well as Fig.37 Of the two gas outlets 70 shown in the figure, the gas outlet 70 on the right side (+X direction side) in the figure is marked as gas outlet 70 ( 1 ), and the gas outlet 70 on the left side (−X direction side) in the figure is marked as gas outlet 70 ( 2 ).

[0219] As described above, the plurality of gas ejection ports 70 are arranged discretely in a circle in a plan view. Hereinafter, a virtual circular line connecting the centers of the plurality of gas ejection ports 70 is referred to as a "virtual gas ejection port circle."

[0220] The gas ejection ports 70(1) and 70(2) correspond to a pair of gas ejection ports 70, 70 that are diametrically opposed to each other on the virtual gas ejection port circle. Here, the local active gas ejected from the gas ejection port 70(1) is denoted as the local active gas g2(1), and the local active gas ejected from the gas ejection port 70(2) is denoted as the local active gas g2(2).

[0221] The gas ejection port 70(1) has a certain ejection port inclination A71 that exceeds "0" and is less than 90 degrees relative to the horizontal direction (X direction) as a reference direction. The ejection port inclination A71 is set so that the local active gas g2(1) ejected from the gas ejection port 70(1) is directed toward the collision point P80.

[0222] Similar to the gas ejection port 70(1), the gas ejection port 70(2) has a certain ejection port inclination A72 with respect to the horizontal direction that is greater than "0" and less than 90 degrees. The ejection port inclination A72 is set so that the local active gas g2(2) ejected from the gas ejection port 70(2) is directed toward the collision point P80.

[0223] The ejection port inclinations A71 and A72 are set to be the same angle as each other, and are set to 45 degrees, for example.

[0224] The remaining film thickness T6 of the ground conductor 60 under the active gas buffer space 68 provided with the gas ejection ports 70(1) and 70(2) is set to, for example, 3 mm. The formation interval R70 between the center positions of the uppermost gas ejection ports 70(1) and 70(2) is set to, for example, 16.4 mm. The formation interval R70 is consistent with the length of the diameter Φ of the virtual gas ejection port circle.

[0225] On the other hand, the entire depth DTA of the case opening 41 along the Z direction is set to, for example, 18.5 mm, and the upper depth DT1 of the upper region 41 a of the case opening 41 along the Z direction is set to, for example, 5.0 mm.

[0226] The side surface of the lower tapered region 41t of the case opening 41 is expanded in a conical shape along a tapered inclination A41. The tapered inclination A41 is set to 45 degrees, for example.

[0227] In the ground conductor 60 having the above structure, when the local active gases g2(1) and g2(2) are ejected from the gas ejection ports 70(1) and 70(2), the local active gas g2(1) collides with the local active gas g2(2) at the collision point P80. Fig.37 As shown in FIG. 1 , the formation depth of the collision point P80 from the surface of the ground conductor 60 is the collision depth DTX.

[0228] In addition, even if the total number of gas ejection ports 70 is "3" or more, by arranging the gas ejection ports 70 along a virtual gas ejection port circle having a diameter of the interval R70 and setting the ejection port inclination A70 to be the same value in the direction toward the collision point P80, it is possible to cause more than three local active gases to collide at the same collision point P80. In addition, the ejection port inclination A70 is a general term for the ejection port inclinations A71 and A72, etc.

[0229] In the above-described setting example of the ejection port inclinations A71 and A72, the formation interval R70, the remaining film thickness T6, and the upper depth DT1, the collision depth DTX of the collision point P80 is 5.2 mm.

[0230] When the diameters of the gas ejection ports 70(1) and 70(2) are taken into consideration, it can be considered that a plurality of local active gases collide in a collision region 80 having an extension centered at the collision point P80. Therefore, in the above example, the collision region 80 is formed from the upper region of the lower conical region 41t to the lower region of the upper region 41a. That is, the collision region 80 exists in the lower conical region 41t or in the upper region 41a above the lower conical region 41t.

[0231] (Ejection method of active gas G2)

[0232] Figures 38 to 41 Each of them is an explanatory diagram schematically showing the ejection mode of the active gas G2 in the case opening 41 of the electrode unit 55 according to the second embodiment. Figures 38 to 41 Equivalent to Fig.34 Part of the D-D section. Figures 38 to 41 The XYZ orthogonal coordinate systems are recorded respectively.

[0233] Hereinafter, the ejection direction of the local active gas g2(1) ejected from the gas ejection port 70(1) is defined as the local active gas ejection direction V7(1), and the ejection direction of the local active gas g2(2) ejected from the gas ejection port 70(2) is defined as the local active gas ejection direction V7(2).

[0234] like Fig.38 As shown, the local active gas g2(1) is ejected along the local active gas ejection direction V7(1) to reach the collision point P80, and the local active gas g2(2) is ejected along the local active gas ejection direction V7(2) to reach the collision point P80.

[0235] That is, the direction in which the local active gas g2(1) flows is only one direction of the local active gas ejection direction V7(1), and the direction in which the local active gas g2(2) flows is only one direction of the local active gas ejection direction V7(2).

[0236] Afterwards, if Fig.39 As shown, the local active gas g2 ( 1 ) collides with the local active gas g2 ( 2 ) in the collision region 80 including the collision point P80 , and the local active gases g2 ( 1 ) and g2 ( 2 ) diffuse in a plurality of diffusion directions DK.

[0237] That is, the direction in which the local active gas g2(1) flows is dispersed from one local active gas ejection direction V7(1) into a plurality of diffusion directions DK, and the direction in which the local active gas g2(2) flows is dispersed from one local active gas ejection direction V7(2) into a plurality of diffusion directions DK. In this way, the directions in which the plurality of local active gases flow in the collision region 80 are dispersed from one direction into a plurality of diffusion directions.

[0238] Moreover, if Fig.40 As shown, the intermediate supply direction DR1 of the plurality of local active gases is affected by the side surface of the lower tapered region 41 t and is restricted to be close to the tapered inclination A41 .

[0239] Thus, since the collision region 80 exists in the lower tapered region 41t and the upper region 41a above the lower tapered region 41t, the plurality of local active gases that have been diffused flow in the direction of the tapered shape along the side surface of the lower tapered region 41t as they go downward.

[0240] Afterwards, if Fig.41 As shown, a plurality of local reactive gases are supplied to a subsequent processing space at a lower position along a final supply direction DR2, and the final supply direction DR2 expands along a tapered inclination A41.

[0241] (Effect)

[0242] The active gas generating device 75 of the second embodiment having such a structure has the same effects as those of the first embodiment, and also has the following effects unique to the second embodiment.

[0243] The active gas generating device 75 of the second embodiment accommodates the electrode unit 55 having the above-mentioned grounding conductor 60 in the housing inner space 1S of the housing 1. The plurality of gas ejection ports 70 provided in the grounding conductor 60 of the electrode unit 55 of the second embodiment are provided so as to approach each other as they go downward, so that the plurality of local active gases collide in the collision region 80 including the collision point P80, and the collision region 80 exists in the lower conical region 41t or at a position above the lower conical region 41t.

[0244] Therefore, if Fig.39 As shown, due to the collision of the plurality of local active gases in the collision region 80 , the flow directions of the plurality of local active gases are dispersed from one direction into a plurality of diffusion directions DK.

[0245] The collision region 80 exists in the lower tapered region 41t or above the lower tapered region 41t. Therefore, the plurality of local active gases diffused separately move downward along the Fig.40 The flow is in a middle supply direction DR1 shown, which is a direction along the tapered shape of the side surface of the lower tapered region 41t.

[0246] Then, the active gas G2 containing a plurality of local active gases flows from the lower tapered area 41t toward the lower processing space along the Fig.41The final supply direction DR2 shown flows while spreading, and the final supply direction DR2 is a direction along the tapered shape of the side surface of the lower tapered region 41t.

[0247] Thus, the multiple local active gases ejected from the multiple gas ejection ports 70 are as follows. Figures 38 to 41 As shown, the liquid flows in the housing opening 41 .

[0248] As a result, even if the space pressure p0 of the active gas buffer space 68 and the space pressure p1 of the subsequent processing space differ greatly, the active gas generating device 75 of the first embodiment can supply the active gas G2 uniformly to the subsequent processing space.

[0249] The multiple gas nozzles 70 provided in the electrode unit 55 of embodiment 2 are respectively formed to be inclined in a direction approaching a collision area 80 including a collision point P80 as they approach downward, and the formation angle of each of the multiple gas nozzles 70 relative to a horizontal direction serving as a reference direction, i.e., a nozzle inclination A70, is set to the same value.

[0250] Therefore, even if the number of the gas ejection ports 70 is “3” or more, a plurality of local active gases ejected from the plurality of gas ejection ports 70 can be made to collide in the same collision region 80 .

[0251] As a result, the active gas generating device 75 of the second embodiment can supply more uniform active gas G2 toward the subsequent processing space by dispersing a plurality of local active gases in a plurality of diffusion directions in one collision region 80 .

[0252] Moreover, if Figure 1 As shown, the active gas generating device 75 of the second embodiment adopts a structure in which a plurality of electrode units 55 are provided as the electrode units 51 to 53 .

[0253] Therefore, the active gas generating device 75 of the second embodiment can uniformly supply the active gas G2 to a relatively large subsequent processing space by ejecting a plurality of local active gases from the plurality of electrode units 51 to 53 each having the same structure as the electrode unit 55 .

[0254] While the present invention has been described in detail, the above description is in all aspects illustrative and the present invention is not limited thereto. It is understood that numerous modifications not shown here are conceivable without departing from the scope of the present invention.

[0255] For example, in the second embodiment, a plurality of local active gases are made to collide in one collision region 80 , but a plurality of local active gases may be made to collide selectively in two or more collision regions.

[0256] That is, the present invention can freely combine the various embodiments within the scope of the disclosure, or can appropriately modify or omit the various embodiments.

[0257] Explanation of symbols

[0258] 1 Housing

[0259] 2 High voltage side dielectric film

[0260] 3 Ground side dielectric film

[0261] 4 Discharge space

[0262] 5 Power supply

[0263] 6.60 Grounding conductor

[0264] 7 Conductive film

[0265] 8 Cover dielectric film

[0266] 9 Shielding dielectric film

[0267] 10 Dielectric film support component

[0268] 11 Dielectric film pressing part

[0269] 12 Pressing parts

[0270] 13 Buffer conductor

[0271] 21 Gas flow path

[0272] 22 Cooling circuit

[0273] 41 Shell opening

[0274] 41a Upper area

[0275] 41t Lower cone area

[0276] 50, 51~53, 55 electrode units

[0277] 61 Raw gas buffer space

[0278] 62 Narrow Space

[0279] 63 Side Space

[0280] 68 Buffer space for active gas

[0281] 69, 70 Gas outlet

[0282] 71, 75 Active gas generating device

[0283] 80 Collision Area

[0284] E1 High voltage side electrode component

[0285] E2 Grounding electrode component

Claims

1. An active gas generating device for activating a raw material gas supplied to a discharge space to generate an active gas, characterized in that: have: an electrode unit; and The shell is conductive and contains the electrode unit in the space inside the shell. The housing has a housing bottom including a flat surface and a conductor receiving space recessed from the flat surface in a depth direction. The electrode unit comprises: a first electrode forming part; A second electrode forming part is disposed below the first electrode forming part; and a reference potential conductor, disposed below the second electrode forming portion and accommodated in the conductor accommodation space; The first electrode component includes a first electrode dielectric film and a first electrode conductive film formed on an upper surface of the first electrode dielectric film. The second electrode forming part includes a second electrode dielectric film and a second electrode conductive film formed on a lower surface of the second electrode dielectric film. The reference potential conductor has a buffer space for active gas at an upper portion, and the second electrode component is arranged to block the buffer space for active gas. The second electrode dielectric film has a dielectric through-hole penetrating the second electrode dielectric film in a region overlapping with the active gas buffer space in a plan view, and the second electrode conductive film has a conductive film opening in a region overlapping with the active gas buffer space in a plan view, and the conductive film opening overlaps with the dielectric through-hole in a plan view. The space where the first electrode dielectric film and the second electrode dielectric film face each other is defined as a main dielectric space. The discharge space includes a main discharge space in a region where the first and second electrode conductive films overlap in a plan view within the main dielectric space. An AC voltage is applied to the first electrode conductive film, and the second electrode conductive film is set to a reference potential via the housing and the reference potential conductor. The active gas generating device further includes a plurality of gas ejection ports, each of which is provided so as to penetrate the reference potential conductor from the bottom surface of the active gas buffer space, and the plurality of gas ejection ports do not overlap with the dielectric through-hole in a plan view. The discharge space includes, in addition to the main discharge space, an auxiliary discharge space including the dielectric through-hole and a part of the active gas buffer space. The active gas discharged from the plurality of gas ejection ports is defined as a plurality of local active gases. The housing bottom of the housing has a housing opening in a region overlapping with the active gas buffer space in a plan view, and the plurality of local active gases are guided downward through the housing opening. The shell opening includes a tapered region whose opening area increases as it goes downward. The plurality of gas ejection ports are arranged so as to approach each other as they go downward so that the plurality of local active gases collide in a collision region, and the collision region exists in the tapered region or above the tapered region.

2. The active gas generating device according to claim 1, wherein: The plurality of gas ejection ports are formed so as to be inclined in a direction approaching the collision region as they go downward, and the formation inclination angles of the plurality of gas ejection ports relative to a reference direction are set to the same value.

3. The active gas generating device according to claim 1 or 2, wherein: The electrode unit includes a plurality of electrode units. The housing accommodates the plurality of electrode units in the housing inner space.

4. The active gas generating device according to any one of claims 1 to 3, wherein: Also available: a dielectric film supporting member provided on the flat surface of the housing and having a supporting surface for supporting the first electrode dielectric film from below; and a dielectric film pressing member for pressing the first electrode dielectric film from above, The dielectric film pressing member does not overlap with the first electrode conductive film in a plan view. The lower surface of the dielectric film pressing member includes a dielectric contact region that contacts the upper surface of the first electrode dielectric film and a dielectric non-contact region that does not contact the upper surface of the first electrode dielectric film, the dielectric contact region overlaps with the peripheral region of the first electrode dielectric film and the support surface of the dielectric film supporting member in a plan view, and the dielectric non-contact region overlaps with the middle region of the first electrode dielectric film in a plan view, the middle region being a region adjacent to the first electrode conductive film side from the peripheral region, The dielectric film pressing member has conductivity and is set to the reference potential. The first electrode dielectric film is pressed from above by the dielectric film pressing member in the dielectric contact region.

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