Lithium niobate wafer laser composite cutting equipment

By designing the laser composite cutting equipment for lithium niobate wafers, the automated cutting process is realized, and the problem of poor yield of the finished product of narrow strips of thick lithium niobate crystals is solved, and the processing efficiency and accuracy are improved.

CN119407356APending Publication Date: 2025-02-11WUHAN SPACE SANJIANG LITRI CO LTD
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Patent Information

Application Number
CN202411718529.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-28
Publication Date
2025-02-11

AI Technical Summary

Technical Problem

The yield of the narrow strip cutting finished product of thick lithium niobate crystals in the prior art is poor, and the processing efficiency and accuracy are low, which affects the quality of the finished product.

Method used

A lithium niobate wafer laser composite cutting equipment was designed, including a material storage mechanism, a material conveying mechanism, a material transfer mechanism, a laser processing mechanism and a glue cleaning mechanism to realize automatic loading and unloading, hidden cutting, glue coating, surface cutting and Cleaning process.

Benefits of technology

The yield of the finished product of the narrow strip cutting of lithium niobate crystals is improved, processing efficiency and accuracy is enhanced, uncertainty caused by human operation is reduced, and the space utilization of the equipment is optimized.

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Abstract

The invention relates to the technical field of lithium niobate wafer cutting equipment, and discloses lithium niobate wafer laser composite cutting equipment which comprises a rack, a material storage mechanism, a material conveying mechanism, a material transferring mechanism, a laser processing mechanism and a gluing and cleaning mechanism, and the material storage mechanism, the material conveying mechanism, the material transferring mechanism, the laser processing mechanism and the gluing and cleaning mechanism are arranged on the rack. Lithium niobate wafers are transferred through the material conveying mechanism and the material transferring mechanism, raw materials are subjected to hidden cutting processing through the hidden cutting laser device to form semi-clinker, the semi-clinker is glued through the gluing piece, the semi-clinker is subjected to surface cutting processing through the surface cutting laser device to form clinker, and the clinker is cleaned through the cleaning piece. The problem that in the prior art, the yield of narrow strip cutting finished products of thick lithium niobate crystals is not good is solved, the structural compactness and the space utilization rate are good, and the machining efficiency and the machining precision are high.
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Description

Technical Field

[0001] The present invention relates to the technical field of lithium niobate wafer cutting equipment, and in particular to a lithium niobate wafer laser composite cutting equipment. Background Art

[0002] Lithium niobate crystals have high temperatures, small temperature coefficients of piezoelectric effect, high electromechanical coupling coefficients, low dielectric losses, stable crystal physical and chemical quality, good processing performance, and are easy to prepare large-scale high-quality crystals. They are an excellent piezoelectric crystal material. In various fields where lithium niobate crystals are used, lithium niobate crystals need to be cut and processed, but the existing wheel cutting and single laser hidden cutting, especially for the narrow strip cutting of thick lithium niobate crystals, will cause large edge collapse in the finished product; and the processing of lithium niobate crystals also includes various processes such as glue coating and cleaning. In the existing technology, lithium niobate crystals need to be repeatedly transferred between various processing process equipment, which not only has low processing efficiency, but also affects the processing accuracy to a certain extent, resulting in low finished product yield. Summary of the invention

[0003] Based on the above, the purpose of the present invention is to provide a lithium niobate wafer laser composite cutting equipment, which solves the problem of poor yield of narrow strip cutting of thick lithium niobate crystals in the prior art, has better structural compactness and space utilization, and higher processing efficiency and processing accuracy.

[0004] To achieve the above object, the present invention adopts the following technical solutions:

[0005] A lithium niobate wafer laser composite cutting device comprises a frame and a material storage mechanism, a material feeding mechanism, a material transfer mechanism, a laser processing mechanism and a glue coating and cleaning mechanism arranged on the frame;

[0006] The material storage mechanism comprises a material basket, wherein the material basket has a plurality of material bins, each of which is used to store a raw material and a corresponding clinker formed after the raw material is processed;

[0007] A material conveying mechanism, having a material taking and discharging station, and used for conveying the raw material in each of the silos to the material taking and discharging station, and conveying the clinker located at the material taking and discharging station back to the corresponding silo;

[0008] The laser processing mechanism comprises a processing frame, a hidden cutting laser, a surface cutting laser and a processing table movably arranged along the X direction and the Y direction, wherein the processing head of the hidden cutting laser and the processing head of the surface cutting laser are respectively movably arranged on the processing frame along the Z direction, and the processing table has a material receiving and delivering position, a first processing position and a second processing position, wherein the first processing position is directly opposite to the processing head of the hidden cutting laser, and the hidden cutting laser is used to perform hidden cutting processing on raw materials to form semi-clinker, and the second processing position is directly opposite to the processing head of the surface cutting laser, and the surface cutting laser is used to perform surface cutting processing on the semi-clinker to form the clinker;

[0009] The glue coating and cleaning mechanism comprises a loading platform, a glue coating member and a cleaning member, wherein the loading platform is provided with a loading station, the glue coating member is used to coat the semi-cooked material located at the loading station with glue, and the cleaning member is used to clean the clinker located at the loading station;

[0010] The material transfer mechanism comprises a material taking tray arranged on the frame and movable along the X direction and the Z direction. The material taking tray can flow between the material taking and placing station, the material receiving and delivering station and the material loading station, and can absorb or release the raw material, the semi-cooked material or the clinker.

[0011] As a preferred solution of a lithium niobate wafer laser composite cutting device, the material feeding mechanism includes a material grabbing component and a material guiding component;

[0012] The material guide assembly comprises two guide rails arranged in parallel and at intervals along the Y direction, the material storage mechanism has a loading and unloading opening, one end of each of the guide rails faces the loading and unloading opening in the X direction, and the material taking and placing station is provided between the two guide rails;

[0013] The material grabbing assembly includes a first X-direction linear module and a material grabbing piece. The first X-direction linear module is arranged on the frame, and the material grabbing piece is arranged at the driving end of the first X-direction linear module. The first X-direction linear module is used to drive the material grabbing piece to move along the X direction. The material grabbing piece is used to clamp a raw material from the loading and unloading ports and move the raw material to the two guide rails. The material grabbing piece drives the raw material to move along the two guide rails to the material taking and unloading station and then releases the raw material. The material grabbing piece is also used to clamp the clinker located at the material taking and unloading station and push the clinker to move along the two guide rails to enter the silo from the loading and unloading ports.

[0014] As a preferred solution for lithium niobate wafer laser composite cutting equipment, the material guide assembly also includes a guide rail driving module, which is arranged on the frame and drives the two guide rails to drive the two guide rails to move closer to or away from each other in the Y direction.

[0015] As a preferred solution of a lithium niobate wafer laser composite cutting device, the material storage mechanism further includes a partition and a lifting module;

[0016] The partition is arranged at one end of the guide rail, and the partition is provided with the loading and unloading openings;

[0017] The lifting module is arranged on the frame, and the material basket is connected to the driving end of the lifting module. The lifting module is used to drive the material basket to move in the Z direction. The material basket has a plurality of material bins spaced apart along the Z direction, and each of the material bins has a bin opening. As the material basket moves in the Z direction, the bin openings of the plurality of material bins can face the upper and lower material ports in sequence.

[0018] As a preferred solution of a lithium niobate wafer laser composite cutting device, the material transfer mechanism further includes a second X-axis linear module, a mounting seat and a Z-axis driving member;

[0019] The second X-direction linear module is arranged on the frame, the mounting seat is connected to the driving end of the second X-direction linear module, and the second X-direction linear module is used to drive the mounting seat to move along the X direction;

[0020] The Z-direction driving member is arranged on the mounting seat, the material taking tray is connected to the output end of the Z-direction driving member, and the Z-direction driving member is used to drive the material taking tray to move along the Z direction.

[0021] As a preferred solution for lithium niobate wafer laser composite cutting equipment, two Z-axis driving members and two material-collecting trays are provided, and the two Z-axis driving members are both provided on the mounting seat and are respectively driven and connected to one material-collecting tray.

[0022] As a preferred solution of the lithium niobate wafer laser composite cutting equipment, the glue cleaning mechanism also includes a base and a second rotating drive member, the base is arranged on the frame, the material loading platform is rotatably arranged on the base, and the second rotating drive member is arranged in the base and drivingly connected to the material loading platform for driving the material loading platform to rotate;

[0023] The glue coating member comprises a glue coating head which is adjustably arranged on the base platform, the glue coating head can be located above the material loading platform or withdrawn from the above the material loading platform, and the glue coating head is used to coat the semi-cooked material on the material loading platform with glue;

[0024] The cleaning component comprises a cleaning nozzle which is adjustably arranged on the base platform. The cleaning nozzle can be located above the loading platform or withdrawn from above the loading platform. The cleaning nozzle is used to spray cleaning liquid onto the clinker on the loading platform.

[0025] As a preferred solution of lithium niobate wafer laser composite cutting equipment, the laser processing mechanism also includes a base, a Y-axis drive module, an X-axis drive module and a first rotating drive component, the base is arranged on the frame, the Y-axis drive module is arranged on the base, the X-axis drive module is arranged at the output end of the Y-axis drive module, the first rotating drive component is arranged at the output end of the X-axis drive module, and is driven and connected to the processing table, the Y-axis drive module is used to drive the X-axis drive module to move along the Y direction, the X-axis drive module is used to drive the first rotating drive component to move along the X direction, and the first rotating drive component is used to drive the processing table to rotate with the Z axis as the rotation axis.

[0026] As a preferred solution of lithium niobate wafer laser composite cutting equipment, it also includes a viewing angle imaging module and an industrial computer, and the industrial computer is equipped with a motion control module and two laser control modules;

[0027] The industrial computer is used to input processing parameters, and the two laser control modules are used to control the switch and light output power of the hidden cutting laser and the switch and light output power of the surface cutting laser according to the processing parameters;

[0028] The viewing angle imaging module is electrically connected to the industrial computer, and the viewing angle imaging module is used to obtain imaging data of the raw material or the semi-cooked material on the processing table. The industrial computer is used to receive the imaging data and control the Y-direction driving module, the X-direction driving module and the first rotating driving member to work according to the processing parameters and the imaging data through the motion control module.

[0029] As a preferred solution of lithium niobate wafer laser composite cutting equipment, the laser processing mechanism also includes a first Z-direction moving module, a second Z-direction moving module and a third Z-direction moving module which are arranged on the processing frame and electrically connected to the motion control module, and the motion control module is also used to control the operation of the first Z-direction moving module, the second Z-direction moving module and the third Z-direction moving module, the processing head of the hidden cutting laser is arranged at the driving end of the first Z-direction moving module, and the first Z-direction moving module is used to drive the processing head of the hidden cutting laser to move along the Z direction, the processing head of the surface cutting laser is arranged at the driving end of the second Z-direction moving module, and the second Z-direction moving module is used to drive the processing head of the surface cutting laser to move along the Z direction, and the viewing angle imaging module is arranged at the driving end of the third Z-direction moving module, and the third Z-direction moving module is used to drive the viewing angle imaging module to move along the Z direction.

[0030] The beneficial effects of the present invention are:

[0031] The present invention provides a lithium niobate wafer laser composite cutting device, which takes out raw materials from a material basket through a material feeding mechanism so that a material transfer mechanism absorbs the raw materials from a material taking and placing station; the raw materials are transferred to a processing table located at a material receiving and delivering station through the material transfer mechanism, and the processing table moves the raw materials to a first processing station with the raw materials, so that a hidden cutting laser is used to perform hidden cutting processing on the raw materials to form semi-cooked materials, and then the processing table moves the semi-cooked materials to the material receiving and delivering station; the semi-cooked materials are then absorbed by the material transfer mechanism and transferred to a loading table at a loading station, and then the semi-cooked materials are transferred to a loading station by a glue coating member. Glue the semi-cooked material, and then transfer the glued semi-cooked material to the processing table through the material transfer mechanism. The processing table moves to the second processing position so that the semi-cooked material can be surface-cut by the surface cutting laser to form clinker; then the processing table moves the clinker to the receiving and delivering position, and the clinker is transferred to the loading table at the loading station through the material transfer mechanism, and the clinker is cleaned by the cleaning parts; finally, the clinker is transferred to the loading and unloading station through the material transfer mechanism, and the clinker at the loading and unloading station is transported back to the corresponding silo by the feeding mechanism. The lithium niobate wafer laser composite cutting equipment realizes the automatic loading and unloading, hidden cutting, gluing, surface cutting, and cleaning processes. It not only has the advantages of narrow cutting path, small edge collapse and high efficiency, but also avoids the uncertain risks caused by manual operation; at the same time, the layout is reasonable and the space utilization rate is high, which makes the overall volume of the lithium niobate wafer laser composite cutting equipment small. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.

[0033] Figure 1 is a schematic structural diagram of a lithium niobate wafer laser composite cutting device at a first viewing angle provided by an embodiment of the present invention;

[0034] Figure 2 is a schematic structural diagram of a lithium niobate wafer laser composite cutting device at a second viewing angle provided by an embodiment of the present invention;

[0035] Figure 3 yes Figure 2 A magnified view of part B;

[0036] Figure 4 is a schematic structural diagram of a lithium niobate wafer laser composite cutting device at a third viewing angle provided by an embodiment of the present invention;

[0037] Figure 5 is a schematic structural diagram of a lithium niobate wafer laser composite cutting device at a fourth viewing angle provided by an embodiment of the present invention;

[0038] Figure 6 yes Figure 5 A magnified view of part A;

[0039] Figure 7 is a schematic structural diagram of a lithium niobate wafer laser composite cutting device at a fifth viewing angle provided by an embodiment of the present invention;

[0040] Figure 8 It is a structural schematic diagram of a glue coating and cleaning mechanism provided by an embodiment of the present invention;

[0041] Fig. 9 is a schematic diagram of a control system provided by an embodiment of the present invention;

[0042] Fig.10 This is a working flow chart of a lithium niobate wafer laser composite cutting device provided by an embodiment of the present invention;

[0043] Fig.11 is a schematic diagram of horizontal optical path transmission of a surface-cut laser provided in an embodiment of the present invention;

[0044] Fig.12 is a schematic diagram of vertical optical path transmission of a surface-cut laser provided in an embodiment of the present invention;

[0045] Fig.13 Schematic diagram of the optical path transmission of the first autofocus unit of the surface-cut laser provided in an embodiment of the present invention;

[0046] Fig.14 is a schematic diagram of horizontal optical path transmission of a hidden cutting laser provided in an embodiment of the present invention;

[0047] Fig.15 is a schematic diagram of vertical optical path transmission of a hidden cutting laser provided in an embodiment of the present invention;

[0048] Fig.16 It is a schematic diagram of the optical path transmission of the second autofocus unit of the hidden cutting laser provided in an embodiment of the present invention.

[0049] In the figure:

[0050] 1. Frame;

[0051] 2. Material storage mechanism; 11. Material basket; 111. Shelving bar; 110. Material bin; 12. Partition plate; 120. Material loading and unloading port; 13. Lifting module;

[0052] 3. Material feeding mechanism; 31. Material grabbing assembly; 311. First X-axis linear module; 312. Material grabbing member; 32. Material guiding assembly; 321. Guide rail; 3210. L-shaped guide groove;

[0053] 4. Material transfer mechanism; 41. Material pick-up tray; 411. Vacuum suction cup; 42. Second X-axis linear module; 43. Mounting seat; 44. Z-axis driving member;

[0054] 5. Laser processing mechanism; 51. Processing frame; 52. Processing table; 53. Base; 54. Y-axis driving module; 55. X-axis driving module; 56. Surface cutting laser; 561. UV laser generator; 562. First variable-power beam expander; 563. First power adjustment unit; 564. First horizontal optical path reflector; 565. First beam shaping unit; 566. First horizontal optical path lens; 567. First focusing objective lens; 568. First vertical optical path lens; 569. First vertical optical path reflector; 5691. First dichroic mirror; 5692. Surface cutting focus camera; 5693. First illumination light source; 5694. First cross-reticle; 5695. First focusing unit lens; 5696. First focusing unit reflector; 5697. Second focusing unit Reflector; 5698, second focusing unit lens; 57, hidden cutting laser; 571, infrared laser generator; 572, second variable magnification beam expander; 573, second power adjustment unit; 574, second horizontal optical path reflector; 575, second beam shaping unit; 576, second horizontal optical path lens; 577, second focusing objective lens; 578, second vertical optical path lens; 579, second vertical optical path reflector; 5791, second dichroic mirror; 5792, hidden cutting focusing camera; 5793, second illumination light source; 5794, second cross-reticle; 5795, third focusing unit lens; 5796, third focusing unit reflector; 5797, fourth focusing unit reflector; 5798, fourth focusing unit lens; 5799, piezoelectric objective lens positioner;

[0055] 6. Glue coating and cleaning mechanism; 61. Material loading platform; 62. Glue coating part; 63. Cleaning part; 64. Bottom platform;

[0056] 7. Ion wind wand;

[0057] 100. Lithium niobate wafer. DETAILED DESCRIPTION

[0058] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0059] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0060] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0061] In the description of the present embodiment, the terms "upper", "lower", "left", "right" and other directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of description and simplified operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation of the present invention. In the description of the present invention, unless otherwise specified, the meaning of "plurality" is two or more. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0062] like Figures 1 to 16 As shown, this embodiment provides a lithium niobate wafer laser composite cutting equipment, which includes a frame 1, on which a storage mechanism 2, a feeding mechanism 3, a transfer mechanism 4, a laser processing mechanism 5 and a cleaning mechanism are arranged. The storage mechanism 2 is used to store lithium niobate wafers 100 and lithium niobate wafers 100 after processing, saving space; the feeding mechanism 3 and the transfer mechanism 4 are used to transfer the lithium niobate wafers 100 in the storage mechanism 2 to the laser processing mechanism 5 for laser processing, and are also used to transfer the lithium niobate wafers 100 after laser processing to the glue coating and cleaning mechanism 6 for glue coating and cleaning, and are also used to return the lithium niobate wafers 100 after processing to the storage mechanism 2, completing the automatic loading and unloading, laser processing, glue coating and cleaning process of the lithium niobate wafers 100, which can avoid the uncertain risks brought by human operation and has high efficiency.

[0063] Specifically, the material storage mechanism 2 includes a material basket 11, and the material basket 11 has a plurality of material bins 110, each material bin 110 is used to store a raw material and a corresponding clinker formed after the raw material is processed. Among them, the lithium niobate wafer 100 before processing is the raw material, and the lithium niobate wafer 100 after processing is the clinker. By taking out the raw material from a material bin 110 for processing, and sending the processed clinker back to the material bin 110 for storage, there is no need to arrange an additional material basket 11 for storing clinker, which is conducive to improving the space utilization rate of the lithium niobate wafer laser composite cutting equipment.

[0064] In this embodiment, the material transfer mechanism 4 includes a material taking tray 41 arranged on the frame 1 and movable along the X direction and the Z direction. The material taking tray 41 is used to absorb or loosen the raw material or the cooked material to realize the transfer of the raw material or the cooked material between various mechanisms. Among them, a plurality of vacuum suction cups 411 arranged in an interval ring are arranged on the material taking tray 41. The vacuum suction cups 411 are externally connected to a vacuum pump. The vacuum pump is used to realize negative pressure or break the negative pressure at the opening of the vacuum suction cup 411, that is, the negative pressure at the opening of the vacuum suction cup 411 is used to absorb the lithium niobate wafer 100, and the negative pressure is broken to realize the loosening of the lithium niobate wafer 100. The transfer stability of the lithium niobate wafer 100 is better, and it is easy to align the lithium niobate wafer 100 and place it on various mechanisms, thereby improving the processing accuracy.

[0065] Specifically, the material transfer mechanism 4 also includes a second X-direction linear module 42, a mounting seat 43 and a Z-direction driving member 44. The second X-direction linear module 42 is arranged on the frame 1, and the mounting seat 43 is connected to the driving end of the second X-direction linear module 42. The second X-direction linear module 42 is used to drive the mounting seat 43 to move along the X direction; the Z-direction driving member 44 is arranged on the mounting seat 43, and the material taking tray 41 is connected to the output end of the Z-direction driving member 44. The Z-direction driving member 44 is used to drive the material taking tray 41 to move along the Z direction. In this embodiment, the material storage mechanism 2, the glue coating and cleaning mechanism 6 and the laser processing mechanism 5 are arranged at intervals along the X direction. The lithium niobate wafer 100 is transferred on the XZ plane through the material transfer mechanism 4, which simplifies the transfer route of the lithium niobate wafer 100, improves the transfer efficiency and the position accuracy of the transfer, and thus ensures the processing accuracy. The Z-direction drive 44 drives the material taking tray 41 to move in the Z direction, so that the material receiving and delivering positions of the material storage mechanism 2, the glue coating and cleaning mechanism 6 and the laser processing mechanism 5 can be arranged in a staggered manner in the height space, avoiding interference with each mechanism during the transportation process, improving the space utilization rate and ensuring the smoothness of transportation. Among them, the second X-direction linear module 42 can be selected as a synchronous belt type linear module or a screw type linear module. Since the synchronous belt type linear module or the screw type linear module are both relatively mature existing technologies, they are not described one by one here. The Z-direction drive 44 can be selected as a linear drive cylinder.

[0066] In order to facilitate the use of the material taking tray 41 to transport the lithium niobate wafer 100, the lithium niobate wafer 100 is taken out of the material basket 11 or returned to the material basket 11 by the material feeding mechanism 3. Specifically, the material feeding mechanism 3 has a material taking and discharging station, and the material feeding mechanism 3 is used to transport the raw material in each material bin 110 to the material taking and discharging station, and to transport the clinker located at the material taking and discharging station back to the corresponding material bin 110. The raw material in the material basket 11 is taken out to the material taking and discharging station by the material feeding mechanism 3, which is convenient for the material transfer mechanism 4 to transport the raw material, and also convenient for the material transfer mechanism 3 to return the clinker to the material basket 11, that is, it is convenient for the material transfer mechanism 4 to absorb the raw material at the material taking and discharging station at a fixed point and place the clinker at the material taking and discharging station at a fixed point, thereby improving the accuracy of the material taking and discharging of the material transfer mechanism 4. Of course, in other embodiments, a plurality of raw materials may be stacked in the material basket 11 , and the raw materials may be directly sucked and transported from the top of the material basket 11 through the material taking tray 41 , which is specifically configured according to actual needs.

[0067] More specifically, the feeding mechanism 3 includes a material grabbing assembly 31 and a material guiding assembly 32, the material guiding assembly 32 includes two guide rails 321 arranged in parallel and spaced apart in the Y direction, the material storage mechanism 2 has a loading and unloading port 120, one end of each guide rail 321 is directly opposite to the loading and unloading port 120 in the X direction, and the above-mentioned material taking and placing station is provided between the two guide rails 321; the material grabbing assembly 31 includes a first X-direction linear module 311 and a material grabbing member 312, the first X-direction linear module 311 is arranged on the frame 1, and the material grabbing member 312 is arranged Located at the driving end of the X-axis linear module, the first X-axis linear module 311 is used to drive the grabbing member 312 to move along the X-direction. The grabbing member 312 is used to clamp a raw material from the upper and lower material ports 120 and move the raw material to the two guide rails 321. The grabbing member 312 drives the raw material to move along the two guide rails 321 to the material taking and discharging station and then releases the raw material; the grabbing member 312 is also used to clamp the clinker located at the material taking and discharging station and push the clinker to move along the two guide rails 321 to enter the silo 110 from the upper and lower material ports 120. When it is necessary to take out the raw material in the basket 11, the first X-axis linear module 311 is started to drive the grabbing member 312 to move along the X direction to the upper and lower material ports 120, the grabbing member 312 is aimed at the raw material in a bin 110 and clamped, the first X-axis linear module 311 drives the grabbing member 312 to return, so as to drag the raw material out of the bin 110 to the guide rail 321, and the guide rail 321 plays a supporting and guiding role for the raw material, and the first X-axis linear module 311 continues to drive the grabbing member 312 to return, driving the raw material to move on the guide rail 321 until it is The raw material moves to the material picking and placing station, the material grabbing member 312 releases the raw material, and the material picking tray 41 sucks the raw material for processing; after processing, the material picking tray 41 sends the clinker back to the material picking and placing station, and the material grabbing member 312 is driven by the first X-direction linear module 311 to move to align with the clinker, and the material grabbing member 312 clamps the clinker, and the material grabbing member 312 is driven by the first X-direction linear module 311 to move, so as to drive the clinker to move on the guide rail 321, until the clinker is pushed back into the silo 110 through the loading and unloading port 120, and the processing of a lithium niobate wafer 100 is completed. The first X-direction linear module 311 only needs to drive the material grabbing member 312 to move between two points to ensure the accuracy of the position transfer of the raw material and the clinker, that is, to ensure that the position error of the lithium niobate wafer 100 in the X direction is within ±1mm. Optionally, the first X-axis linear module 311 is a synchronous belt type linear module or a lead screw type linear module. Since the synchronous belt type linear module or the lead screw type linear module are both relatively mature existing technologies, they are not described one by one here.

[0068] Wherein, L-shaped guide grooves 3210 are formed on the opposite surfaces of the two guide rails 321, that is, when the lithium niobate wafer 100 moves onto the guide rail 321, it is located between the two L-shaped guide grooves 3210 to limit the lithium niobate wafer 100 and prevent the lithium niobate wafer 100 from leaving the guide rail 321 in the Y direction.

[0069] In this embodiment, the material grabbing member 312 includes a clamping cylinder and two clamping plates arranged opposite to each other along the Z direction. The clamping cylinder is arranged at the driving end of the first X-axis linear module 311 and drives the two clamping plates to be connected. The clamping cylinder drives the two clamping plates to move closer to or away from each other to achieve clamping or loosening.

[0070] Preferably, the material guide assembly 32 further includes a guide rail 321 driving module, which is disposed on the rack 1 and drives the two guide rails 321 to drive the two guide rails 321 to move closer to or farther from each other in the Y direction. When the lithium niobate wafer 100 is not transferred to the guide rail 321, the initial spacing between the two guide rails 321 is, for example, 5 mm larger than the width of the lithium niobate wafer 100, so that the lithium niobate wafer 100 can be smoothly moved between the two L-shaped guide grooves 3210; then, the guide rail 321 driving module drives the two guide rails 321 to move closer to or farther from each other in the Y direction at the same time, so as to correct the position of the lithium niobate wafer 100 in the Y direction, and ensure that its position error is within ±1 mm, so as to facilitate the material tray 41 to accurately take or put materials. Exemplarily, the guide rail 321 driving module includes a driving motor and a lead screw structure, the lead screw structure includes a guide rod and a screw, the driving motor drives the connecting screw to drive the screw to rotate, and the screw has two parts of threads with opposite rotation directions, each part of the threads is threadedly connected to a slide seat, the slide seat is movably sleeved on the guide rod, and each slide seat is used to fix a guide rail 321. The drive motor drives the screw to rotate, driving the two slide seats to move, thereby driving the two guide rails 321 to move synchronously. Of course, in other embodiments, the guide rail 321 driving module can also be other structures, such as a driving cylinder and a slide rail slider structure.

[0071] Furthermore, the material storage mechanism 2 also includes a partition 12 and a lifting module 13. The partition 12 is spaced apart at one end of the guide rail 321, and an upper and lower material port 120 is opened on the partition 12; the lifting module 13 is arranged on the frame 1, and the material basket 11 is connected to the driving end of the lifting module 13. The lifting module 13 is used to drive the material basket 11 to move in the Z direction. The material basket 11 has a plurality of material bins 110 spaced apart along the Z direction, and each material bin 110 has a bin opening. As the material basket 11 moves in the Z direction, the bin openings of the plurality of material bins 110 can face the upper and lower material ports 120 in sequence. When loading or unloading, the lifting module 13 drives the basket 11 to move a preset distance each time, so that the opening of each layer of the silo 110 is directly opposite the loading and unloading opening 120, so that the grasping member 312 can grab and clamp the raw material at the loading and unloading opening 120, and it is convenient for the grasping member 312 to put the cooked material back at the loading and unloading opening 120; after completing the processing of a lithium niobate wafer 100, the lifting mechanism drives the basket 11 to rise or fall a preset distance again, so that the opening of the next or previous layer of the silo 110 is aligned with the loading and unloading opening 120, so that the processing of all lithium niobate wafers 100 in the basket 11 is completed in sequence. The above structure can realize the automatic loading and unloading of lithium niobate wafers 100, improve the processing efficiency, and ensure the position accuracy of loading and unloading. Among them, by setting a partition plate, the position of the partition plate is fixed, and only the basket 11 is moved, so that the movement of the basket 11 can be based on the loading and unloading opening 120 on the partition plate 12 as a reference, and aligned, to ensure the position accuracy of loading and unloading. Optionally, the lifting module 13 is a synchronous belt type linear module or a lead screw type linear module. Since the synchronous belt type linear module or the lead screw type linear module are both relatively mature existing technologies, they are not described one by one here.

[0072] In this embodiment, the material basket 11 includes two side plates arranged at a relative interval along the Y direction, and the opposite surfaces of the two side plates are convexly provided with a shelf bar 111. A plurality of shelf bars 111 are arranged in parallel and at intervals along the Z direction on each side plate, and the length of each shelf bar 111 extends along the X direction. The plurality of shelf bars 111 on the two side plates are arranged opposite to each other, and the two shelf bars 111 on the two oppositely arranged side plates form a group of shelves, and each lithium niobate wafer 100 can be placed on a group of shelves, that is, a material bin 110 is formed between two adjacent groups of shelves in the Z direction. Of course, in other embodiments, the structure in the material basket 11 can also be other, for example, a plurality of shelf plates are arranged at intervals along the Z direction in the material basket 11, and each shelf plate is used to place a lithium niobate wafer 100, and a side of the shelf plate close to the partition 12 is provided with an avoidance opening, so that the material grasping member 312 can smoothly clamp the lithium niobate wafer 100.

[0073] Preferably, the material storage mechanism 2 also includes a code reader, a first sensor and a second sensor arranged on the material basket 11, the code reader is used to identify the bar code information identification on the lithium niobate wafer 100, the first sensor is used to monitor whether the lithium niobate wafer 100 in the material basket 11 protrudes from the material basket 11, and the second sensor is used to scan the position and location of the lithium niobate wafer 100 in the material basket 11, so as to timely adjust the position of the lithium niobate wafer 100 or replenish the lithium niobate wafer 100, thereby improving the efficiency of obtaining the lithium niobate wafer 100.

[0074] Furthermore, the laser processing mechanism 5 includes a processing frame 51, a hidden cutting laser 57, a surface cutting laser 56 and a processing table 52 movably arranged along the X direction and the Y direction. The processing head of the hidden cutting laser 57 and the processing head of the surface cutting laser are respectively movably arranged on the processing frame 51 along the Z direction. The processing table 52 has a material receiving and delivering position, a first processing position and a second processing position. The first processing position is opposite to the processing head of the hidden cutting laser 57. The hidden cutting laser 57 is used to perform hidden cutting processing on raw materials to form semi-cooked materials. For example, the laser wavelength of the hidden cutting laser 57 is 1064nm; the second processing position is opposite to the processing head of the surface cutting laser. The surface cutting laser 56 is used to perform surface cutting processing on semi-cooked materials to form clinker. For example, the laser wavelength of the surface cutting laser 56 is 355nm. After the raw material is transferred from the material loading and unloading station to the processing table 52 located at the material receiving and feeding position by the material picking tray 41, the processing table 52 moves with the raw material to the first processing position, and the hidden cutting laser 57 performs hidden cutting processing on the raw material. During the processing, the focus is adjusted by adjusting the position of the processing head of the hidden cutting laser in the Z direction, and the processing of the preset position of the raw material is achieved by moving the processing table 52. That is, the movement of the processing table 52 can realize both material receiving and feeding, and position movement during processing. There is no need to move the processing head of the hidden cutting laser for processing, thereby improving the compactness and integration of the structure. Through the hidden cutting processing, a modified point can be formed inside the lithium niobate wafer 100, so as to improve the edge flatness and cutting success rate of the cut product. Similarly, the semi-cooked material is moved to the second processing position by the processing table 52, and the surface cutting laser 56 performs surface cutting processing on the semi-cooked material. During the processing, the focus is adjusted by adjusting the position of the processing head of the surface cutting laser in the Z direction, and the processing of the preset position of the semi-cooked material is realized by moving the processing table 52, that is, the movement of the processing table 52 can realize both material receiving and feeding, and position movement during processing, and there is no need to move the processing head of the surface cutting laser, thereby improving the compactness and integration of the structure; through the surface cutting processing, a cutting line can be formed on the surface of the lithium niobate wafer 100, which can effectively improve the success rate of cutting. By first performing the hidden cutting processing and then the surface cutting processing, the narrow strip width cutting of the thick lithium niobate wafer 100 can be realized, for example, the cutting line spacing of the lithium niobate wafer 100 with a thickness of 1 to 2 mm can be realized between 1 and 2 mm, and the cutting success rate and the quality of the cut product are high.

[0075] The processing table 52 is a vacuum stage, and a vacuum pump is externally connected to the vacuum stage. The vacuum pump draws vacuum to allow the vacuum stage to tightly absorb the lithium niobate wafer 100 , or breaks the vacuum to loosen the lithium niobate wafer 100 .

[0076] Specifically, the laser processing mechanism 5 also includes a base 53, a Y-direction drive module 54, an X-direction drive module 55 and a first rotary drive member. The base 53 is arranged on the frame 1, preferably a marble base 53. The Y-direction drive module 54 is arranged on the base 53. The X-direction drive module 55 is arranged at the output end of the Y-direction drive module 54. The first rotary drive member is arranged at the output end of the X-direction drive module 55 and drives the processing table 52. The Y-direction drive module 54 is used to drive the X-direction drive module 55 to move along the Y direction. The X-direction drive module 55 is used to drive the first rotary drive member to move along the X direction. The first rotary drive member is used to drive the processing table 52 to rotate with the Z axis as the rotation axis. The position movement of the processing table 52 on the XY plane is realized by the Y-direction drive module 54 and the X-direction drive module 55 to realize the movement during material connection, feeding and processing. The rotation of the processing table 52 on the XY plane is also realized by the first rotary drive member to realize the hidden cutting and surface cutting of the preset position on the lithium niobate wafer 100, which is highly practical.

[0077] Exemplarily, the Y-axis driving module 54 includes a Y-axis driving cylinder and a Y-axis moving table, the Y-axis driving cylinder is driven and connected to the Y-axis moving table to drive the Y-axis moving table to move along the Y direction, and the Y-axis moving table is preferably arranged on the base 53 through a slide rail slider to improve the smoothness of movement; the X-axis driving module 55 includes an X-axis driving cylinder and an X-axis moving table, the X-axis driving cylinder is driven and connected to the X-axis moving table to drive the X-axis moving table to move along the X direction, and the X-axis moving table is preferably arranged on the Y-axis moving table through a slide rail slider to improve the smoothness of movement; the first rotating driving member can be optionally a rotating motor.

[0078] More specifically, the processing frame 51 is a gantry frame, on which a first Z-direction linear module and a second Z-direction linear module are arranged, the first Z-direction linear module drives the processing head connected to the hidden cutting laser to drive the processing head of the hidden cutting laser to move along the Z direction, and the second Z-direction linear module drives the processing head connected to the surface cutting laser to drive the processing head of the surface cutting laser to move along the Z direction to adjust the laser processing focus. The first Z-direction linear module and the second Z-direction linear module are synchronous belt type linear modules or lead screw type linear modules.

[0079] Furthermore, if Figure 8As shown, the glue coating and cleaning mechanism 6 includes a loading platform 61, a glue coating component 62 and a cleaning component 63. The loading platform 61 is provided with a loading station. The glue coating component 62 is used to coat the semi-cooked material at the loading station with glue, and the cleaning component 63 is used to clean the cooked material at the loading station. After the raw material is processed by the hidden cutting laser 57, the processing table 52 moves to the material receiving and delivering position, and then the semi-cooked material is transferred to the loading platform 61 through the material taking tray 41, and the semi-cooked material is coated with glue by the glue coating part 62, so as to apply polar glue on the laser incident surface of the lithium niobate wafer 100 as an adsorption layer; then the semi-cooked material after coating with glue is transferred to the processing table 52 through the material taking tray 41, and the processing table 52 moves to the second processing position, and the semi-cooked material after coating with glue is processed by the surface cutting laser 56. At this time, the glue on the surface of the lithium niobate wafer 100 can absorb slag and smoke, which is beneficial to improve the quality of the processed clinker product; after the processing is completed, the clinker is transferred to the loading platform 61 by the material taking tray 41, and the lithium niobate wafer 100 is cleaned by the cleaning part 63 to remove the glue on the surface of the lithium niobate wafer 100 and the slag generated after the surface cutting laser processing, so as to ensure that the lithium niobate wafer 100 after processing is free of dirt and debris.

[0080] Specifically, the glue coating and cleaning mechanism 6 also includes a base 64 and a second rotating drive member. The base 64 is arranged on the frame 1, and the loading platform 61 is rotatably arranged on the base 64. The second rotating drive member is arranged in the base 64 and is connected to the loading platform 61 to drive the loading platform 61 to rotate. During the glue coating or cleaning process, the loading platform 61 is driven to rotate by the second rotating drive member to ensure the uniformity of glue coating and cleaning, and improve the efficiency of glue coating and cleaning; at the same time, after being cleaned by the cleaning member 63, the rotating loading platform 61 can also dry the excess water on the lithium niobate wafer 100. Among them, the second rotating drive member can be selected but not limited to a rotating motor.

[0081] The loading platform 61 is a vacuum loading platform 61 , and a vacuum pump is connected to the vacuum loading platform 61 . The vacuum pump draws vacuum to allow the vacuum loading platform 61 to tightly hold the lithium niobate wafer 100 , or breaks the vacuum to loosen the lithium niobate wafer 100 .

[0082] More specifically, the glue coating member 62 includes a glue coating head which is adjustable in position on the base 64, and the glue coating head can be located above the loading platform 61 or withdrawn from the loading platform 61, and the glue coating head is used to apply glue to the semi-cooked material on the loading platform 61; the cleaning member 63 includes a cleaning nozzle which is adjustable in position on the base 64, and the cleaning nozzle can be located above the loading platform 61 or withdrawn from the loading platform 61, and the cleaning nozzle is used to spray cleaning liquid to the clinker on the loading platform 61. When the material taking tray 41 moves to the loading platform 61 with the semi-cooked material or clinker, the glue coating head or the cleaning nozzle is withdrawn from above the loading platform 61, so that the semi-cooked material or clinker moves to the loading platform 61 from above the loading platform 61 to the loading platform 61 in a precise docking manner, and then the material taking tray 41 returns, the glue coating head or the cleaning nozzle moves to the top of the loading platform 61, and the loading platform 61 rotates, and the glue coating head applies glue to the semi-cooked material or the cleaning nozzle sprays water to clean the clinker. The glue coating component 62 is connected to an external glue supply device to provide glue for the glue coating head; the cleaning component 63 is connected to an external water supply device to provide pure water for cleaning the nozzle.

[0083] In this embodiment, a first adjusting driving member and a second adjusting driving member are also provided on the base 64. The driving end of the first adjusting driving member is connected to a first connecting rod, which is in an inverted L shape. The vertical rod of the first connecting rod is spaced apart at one side of the loading platform 61, and the cross bar is parallel to the loading platform 61. The gluing head is located at the end of the cross bar. The first adjusting driving member drives the first connecting rod to rotate, driving the gluing head to rotate to the top of the loading platform 61 or to withdraw from the top of the loading platform 61; the driving end of the second adjusting driving member is connected to a second connecting rod, which is in an inverted L shape. The vertical rod of the second connecting rod is spaced apart at one side of the loading platform 61, and the cross bar is parallel to the loading platform 61. The cleaning nozzle is located at the end of the cross bar. The second adjusting driving member drives the second connecting rod to rotate, driving the cleaning nozzle to rotate to the top of the loading platform 61 or to withdraw from the top of the loading platform 61. The first adjusting driving member and the second adjusting driving member can be selected as rotary motors.

[0084] Preferably, a ring-shaped waterproof baffle is also provided on the bottom platform 64, and the loading platform 61, the cleaning component 63 and the glue coating component 62 are all located in the waterproof baffle. When the loading platform 61 rotates, the glue coating component 62 or the cleaning component 63 coats the lithium niobate wafer 100 with glue or sprays water, and the waterproof baffle can block the splashing glue and pure water to avoid affecting other structures.

[0085] In this embodiment, if Figures 1 to 9As shown, the lithium niobate wafer laser composite cutting equipment also includes a visual imaging module and a control system. The control system includes an industrial computer, which is equipped with a motion control module and two laser control modules. The industrial computer is used to input processing parameters. For example, the industrial computer is Advantech IPC610L industrial computer, which is equipped with laser cutting software and has a laser surface cutting process parameter setting interface, a laser hidden cutting process parameter setting interface, and an automatic cutting process parameter interface. The parameters are set through the built-in laser cutting, including laser power, laser frequency, cutting path size and other processing parameters; the hidden cutting laser 57 and the surface cutting laser 56 both have RS232 communication interfaces to communicate with the industrial computer, and the laser cutting software sets the laser pulse width and repetition frequency parameters through the RS232 protocol. The two laser control modules are used to control the switch and light output power of the hidden cutting laser 57 and the switch and light output power of the surface cutting laser 56 according to the processing parameters. The viewing angle imaging module is electrically connected to the industrial computer. The viewing angle imaging module is used to obtain imaging data of the raw material or semi-cooked material on the processing table 52. The industrial computer is used to receive the imaging data and control the Y-direction driving module 54, the X-direction driving module 55 and the first rotating driving member according to the processing parameters and the imaging data through the motion control module.

[0086] It should be noted that the lithium niobate wafer laser composite cutting equipment also includes a distribution box, an external power supply for the distribution box, and the distribution box is connected to the industrial computer and the two laser control modules through two switching power supplies, and is also connected to the motion control module through a filter. The switching power supply is, for example, DC24V, and the filter is, for example, AC220V. Preferably, the distribution box is also connected to a leakage circuit breaker for leakage protection; at the same time, the built-in UPS uninterruptible power supply supplies power to the industrial computer and the two lasers separately. If there is an accidental power failure at the power supply end, the industrial computer and the two lasers can continue to work for a period of time. During this period, the operator can save the process data on the industrial computer to prevent accidental data loss, and shut down the laser according to the normal shutdown process.

[0087] Specifically, the industrial computer also controls the working states of the second X-axis linear module 42, the Z-axis drive 44, the first X-axis linear module 311, the clamping cylinder, the guide rail 321 drive module, the lifting module 13, the Y-axis drive module 54, the X-axis drive module 55, the first rotary drive, the first Z-axis linear module, the second Z-axis linear module, the second rotary drive, the first adjustment drive, and the second adjustment drive through the motion control module to realize the transportation of the lithium niobate wafer 100 between the various mechanisms and the processing of the lithium niobate wafer 100 by the various mechanisms.

[0088] In this embodiment, if Figures 11 to 13As shown, the surface cutting laser 56 includes an ultraviolet laser generator 561 fixed on the processing frame 51 and a first horizontal optical path transmission component. The ultraviolet laser generator 561 is used to emit an ultraviolet laser beam. The first horizontal optical path transmission component includes a first variable-power beam expander 562, a first power adjustment unit 563, a plurality of first horizontal optical path reflectors 564, a first beam shaping unit 565 and a first horizontal optical path lens 566. The ultraviolet laser beam emitted by the ultraviolet laser generator 561 is expanded in diameter by the first variable-power beam expander 562 to obtain the light spot required for processing, and then the power is adjusted by the first power adjustment unit 563, and then reflected by multiple, for example, two first horizontal optical path reflectors 564 to reach the first beam shaping unit 565 for modulation of the phase, amplitude, polarization and other properties of the spatial light field to realize the transformation of the ultraviolet laser beam from incoherence to coherence, and finally transmitted to the processing head of the surface cutting laser by the first horizontal optical path reflector 564 and the first horizontal optical path lens 566.

[0089] Among them, the first power adjustment unit 563 uses a rotating half-wave plate and a polarization beam splitter to achieve power adjustment. The rotating half-wave plate is driven by a rotating motor. The rotating motor is, for example, a Newport PR50CC. The incident ultraviolet laser beam is polarized by the rotating half-wave plate, and then the ultraviolet laser beam is divided into s and p polarized light by the polarization beam splitter, so that the splitting ratio of the ultraviolet laser beam can be continuously adjusted according to demand, that is, the transmission power intensity of the linearly polarized light beam is continuously changed, thereby achieving continuous and rapid power adjustment. Compared with the traditional laser, which uses the pump current to adjust the power to be more stable.

[0090] Among them, the first beam shaping unit 565 is a spatial light modulator (SLM), which can control the phase, amplitude, polarization and other properties of the spatial light field or realize the transformation of the light beam from incoherence to coherence through a driving signal. It is a device that can modulate the spatial distribution of light waves. Since the spatial light modulator is a relatively mature existing technology, it will not be described in detail here.

[0091] Specifically, the processing head of the surface cutting laser includes a first shell, a first focusing objective lens 567567 and a first vertical optical path transmission component arranged in the first shell, the first vertical optical path transmission component includes a first vertical optical path lens 568, a first vertical optical path reflector 569 and a first dichroic mirror 5691, and the ultraviolet laser beam emitted by the ultraviolet laser generator 561 is transmitted to the first vertical optical path lens 568 via the first horizontal optical path transmission component, and is reflected by the first vertical optical path reflector 569 to the first dichroic mirror 5691 and then reflected to the pupil plane of the first focusing objective lens 567, and finally reaches the surface of the lithium niobate wafer vertically through the first focusing objective lens 567 to realize surface cutting laser cutting of the lithium niobate wafer.

[0092] It can be understood that the first dichroic mirror 5691 ensures the stability and directionality of the ultraviolet laser beam; and in the transmission process of the ultraviolet laser beam, after being modulated by the first beam shaping unit 565, it is focused by the first horizontal optical path lens 566 and the first vertical optical path lens 568 to reproduce the phase and amplitude information of the modulated ultraviolet laser beam, wherein the focal points of the first horizontal lens and the first vertical lens coincide.

[0093] Preferably, a first autofocus unit is also provided in the first housing, and the first autofocus unit is used for visual auxiliary focusing and table-cut laser focusing. Specifically, the first autofocus unit includes a table-cut focusing camera 5692, a first illumination light source 5693, a first cross-grained plate 5694, a first focusing unit lens 5695 and a table-cut focusing lens barrel, the first cross-grained plate 5694 is located below the first illumination light source 5693, the first focusing unit lens 5695 is located between the first cross-grained plate 5694 and the table-cut focusing lens barrel, a first focusing unit reflector 5696, a second focusing unit reflector 5697 and a second focusing unit lens 56985 are provided in the table-cut focusing lens barrel, the first focusing unit reflector 5696 is located below the first focusing unit lens 5695, and the second focusing unit lens 5698 is located between the focus camera and the second focusing unit reflector 5697. The light source emitted by the first illumination light source 5693 passes through the first cross-grain plate 5694 and the first focusing unit lens 5695, and then is reflected by the first focusing unit reflector 5696 and the second focusing unit reflector 5697 in turn to reach the first dichroic mirror 5691, and finally reaches the surface of the lithium niobate wafer through the first focusing objective lens. At the same time, the surface cut focus camera 5692 is used to monitor in real time whether there is any deviation in the processing position or abnormal light emission of the ultraviolet laser beam during the processing of the lithium niobate wafer. Among them, the surface cut focus camera 5692 is a visible light CCD camera, which communicates with the industrial computer through a USB3.0 line to realize power supply and image information transmission.

[0094] Furthermore, if Figures 14 to 16As shown, the hidden cutting laser 57 includes an infrared laser generator 571 fixed on the processing frame 51 and a second horizontal optical path transmission component. The infrared laser generator 571 is used to emit an infrared laser beam. The second horizontal optical path transmission component includes a second variable-power beam expander 572, a second power adjustment unit 573, a plurality of second horizontal optical path reflectors 574, a second beam shaping unit 575 and a second horizontal optical path lens 576. The infrared laser beam emitted by the infrared laser generator 571 is expanded in diameter by the second variable-power beam expander 572 to obtain the light spot required for processing, and then the power is adjusted by the second power adjustment unit 573, and then it is reflected by multiple, for example, two second horizontal optical path reflectors 574 to reach the second beam shaping unit 575 for modulation of the phase, amplitude, polarization and other properties of the spatial light field to realize the transformation of the infrared laser beam from incoherence to coherence, and finally transmitted to the processing head of the hidden cutting laser by the second horizontal optical path reflector 574 and the second horizontal optical path lens 576.

[0095] Among them, the second power adjustment unit 573 uses a rotating half-wave plate and a polarization beam splitter to achieve power adjustment. The rotating half-wave plate is driven by a rotating motor. For example, the rotating motor is a Newport PR50CC. The incident infrared laser beam is polarized by the rotating half-wave plate, and then the infrared laser beam is divided into s and p polarized light by the polarization beam splitter, so that the splitting ratio of the infrared laser beam can be continuously adjusted according to demand, that is, the transmission power intensity of the linearly polarized light beam is continuously changed, thereby achieving continuous and rapid power adjustment. Compared with the traditional laser, the power adjustment by adjusting the pump current is more stable.

[0096] Among them, the second beam shaping unit 575 is a spatial light modulator (SLM), which can control the phase, amplitude, polarization and other properties of the spatial light field or realize the transformation of the light beam from incoherence to coherence through a driving signal. It is a device that can modulate the spatial distribution of light waves. Since the spatial light modulator is a relatively mature existing technology, it will not be described in detail here.

[0097] Specifically, the processing head of the hidden cutting laser includes a second shell, a second focusing objective lens 577 and a second vertical optical path transmission component arranged in the second shell, the second vertical optical path transmission component includes a second vertical optical path lens 578, a second vertical optical path reflector 579 and a second dichroic mirror 5791, and the ultraviolet laser beam emitted by the infrared laser generator 571 is transmitted to the second vertical optical path lens 578 via the second horizontal optical path transmission component, and is reflected by the second vertical optical path reflector 579 to the second dichroic mirror 5791 and then reflected to the pupil plane of the second focusing objective lens 577, and finally reaches the surface of the lithium niobate wafer vertically through the second focusing objective lens 577 to realize hidden cutting laser cutting of the lithium niobate wafer.

[0098] It can be understood that the second dichroic mirror 5791 ensures the stability and directionality of the ultraviolet laser beam; and in the transmission process of the ultraviolet laser beam, after being modulated by the second beam shaping unit 575, it is focused by the second horizontal optical path lens 576 and the second vertical optical path lens 578 to reproduce the phase and amplitude information of the modulated ultraviolet laser beam, wherein the focal points of the second horizontal lens and the second vertical lens coincide.

[0099] Preferably, a second autofocus unit is also provided in the second housing, and the second autofocus unit is used for visual auxiliary focusing and implicit laser focusing. Specifically, the second autofocus unit includes an implicit focusing camera 5792, a second illumination light source 5793, a second cross-reticle plate 5794, a third focusing unit lens 5795 and an implicit focusing lens barrel, the second cross-reticle plate 5794 is located below the second illumination light source 5793, the third focusing unit lens 5795 is located between the second cross-reticle plate 5794 and the implicit focusing lens barrel, a third focusing unit reflector 5796, a fourth focusing unit reflector 5797 and a fourth focusing unit lens 5798 are provided in the implicit focusing lens barrel, the third focusing unit reflector 5796 is located below the third focusing unit lens 5795, and the fourth focusing unit lens 5798 is located between the focus camera and the fourth focusing unit reflector 5797. The light source emitted by the second illumination light source 5793 passes through the second cross-reticle plate 5794 and the third focusing unit lens 5795, and then is reflected by the third focusing unit reflector 5796 and the fourth focusing unit reflector 5797 in turn to reach the second dichroic mirror 5791, and finally reaches the surface of the lithium niobate wafer through the second focusing objective lens. At the same time, the hidden cutting focus camera 5792 is used to monitor in real time whether there is any deviation in the processing position or abnormal emission of the infrared laser beam during the processing of the lithium niobate wafer. Among them, the hidden cutting focus camera 5792 is a visible light CCD camera, which communicates with the industrial computer through a USB3.0 line to realize power supply and image information transmission.

[0100] Compared with the laser surface cutting process, the laser hidden cutting process has stricter control over the laser focus depth. Due to the inevitable installation errors and processing errors, the flatness of the processing table 52 is about 10μm. In order to ensure the consistency of the laser focus depth, the lithium niobate wafer laser composite cutting equipment also includes a laser focus real-time correction system. The laser focus real-time correction system specifically includes a piezoelectric objective lens positioner 5799 and a high-precision laser rangefinder. The piezoelectric objective lens positioner 5799 is connected to the hidden cutting focusing objective lens. The piezoelectric objective lens positioner 5799 is used to drive the hidden cutting focusing lens barrel to fine-tune the position in the Z direction. The high-precision laser rangefinder is fixed on the processing frame 51. When the laser hidden cutting process cuts the wafer, the high-precision laser rangefinder can pre-measure the undulating height of the surface of the lithium niobate wafer 100, and feed back the height data to the motion control module through analog quantity. Through the built-in laser focus real-time correction system algorithm, the analog quantity is output to control the piezoelectric objective lens positioner 5799 to drive the hidden cutting focusing objective lens position to fine-tune the position, so as to ensure the consistency of the laser focus depth.

[0101] Among them, the laser focus real-time correction system uses FPGA interface to process analog input and output signals, effectively reducing signal transmission delay and effectively improving the real-time and accuracy of compensation. For example, the step response time of the piezoelectric objective positioner 5799 is 3ms, and the motion range is ±30μm; the high-precision laser rangefinder has a measurement accuracy of 0.25μm and a measurement range of ±500μm.

[0102] Furthermore, refer again to Fig. 9The visual imaging module includes a light source controller, a high-magnification CCD camera and a low-magnification CCD camera, which are used to perform contour recognition and MARK point recognition on the lithium niobate wafer 100. Since the distance between the processing head of the hidden cutting laser and the processing head of the surface cutting laser in the X direction and the Y direction is constant, that is, the relative position of the processing head of the hidden cutting laser and the processing head of the surface cutting laser on the XY plane is fixed, for example, the horizontal distance between the light-emitting point of the hidden cutting laser and the light-emitting point of the surface cutting laser is about 140mm, and imaging data can be obtained through a visual imaging module to assist the processing head of the hidden cutting laser and the processing head of the surface cutting laser to process raw materials and semi-cooked materials respectively, saving costs and reducing the overall volume of the lithium niobate wafer laser composite cutting equipment. That is, the two processing heads and the visual imaging module only move along the z-axis direction, and no displacement occurs in the horizontal direction. Based on the absolute position coordinates of the origin, the horizontal plane coordinates of the processing head of the hidden cutting laser are (x1, y1), the horizontal plane coordinates of the processing head of the surface cutting laser are (x2, y2), and the coordinates of the visual imaging module are (x3, y3). Through the calculation of the above-mentioned coordinate difference of each horizontal plane, the processing table 52 is controlled to move the precise distance along the horizontal plane x and y, so as to realize the precise positioning and imaging of the two processing heads at the same processing position during the processing of the lithium niobate wafer 100, without the need to transfer between two independent laser cutting equipment, so that the positioning accuracy of laser cutting is higher, and there is no need to use two sets of visual imaging modules, which can effectively save costs. Among them, Advantech IPC610L industrial computer has USB3.0, RS2323121 interface, etc. The high-magnification CCD camera and the low-magnification CCD camera are directly connected to the industrial computer through the USB3.0 interface, and the laser cutting software can directly read the camera image and perform image processing through the built-in algorithm.

[0103] Exemplarily, the motion control module is, for example, the Gohigh GSN-024-LT-01 motion control card, the laser control module is, for example, the GNM-403-00 laser control module, and the industrial computer is also equipped with an HCB5-1616 digital IO module and an HCB5-1616 analog module, wherein the GSN-024-LT-01 motion control card is a PCIE interface, which is directly installed on the industrial computer and is used for motion control of each axis; the HCB5-1616 digital IO module has the function of collecting and outputting digital signals, is used to collect digital input signals, and can output digital control according to control system instructions; the HCB5-1616 analog module has the function of collecting and outputting digital signals, can collect analog signals of instruments such as the first laser rangefinder and the second laser rangefinder, and can output analog voltage signals to control devices such as piezoelectric objective lens positioning. The GNM-403-00 laser control module controls the switching of the hidden cutting laser 57 and the surface cutting laser 56 through the HCB5-1616 digital IO module, and outputs 0-10v analog signals through the HCB5-1616 analog module to control the optical power of the hidden cutting laser 57 and the surface cutting laser 56.

[0104] Preferably, if Figure 8 As shown, the lithium niobate wafer laser composite cutting equipment also includes an ion wind rod 7, which is arranged on the frame 1, and the air outlet of the ion wind rod 7 faces the guide rail 321. The ion wind rod 7 can generate a large number of air masses with positive and negative charges, which are used to remove static electricity carried on the surface of the lithium niobate wafer 100 to ensure processing accuracy.

[0105] The lithium niobate wafer laser composite cutting equipment provided in this embodiment can effectively solve the problems of low efficiency, large edge chipping, easy pollution during cutting, etc. of the lithium niobate wafer 100 cut by the blade wheel, and can automatically complete the loading and unloading, hidden cutting, gluing, surface cutting, and cleaning processes. It not only has the advantages of narrow cutting paths, small edge chipping, and high efficiency, but also can avoid the uncertain risks brought by manual operation. It also has the advantages of compact structure, high space utilization, low equipment cost, and high laser cutting positioning accuracy.

[0106] like Fig.10 As shown, the working process of the lithium niobate wafer laser composite cutting equipment provided in this embodiment is described below:

[0107] The processing of a single lithium niobate wafer 100 begins, the material grabbing member 312 takes the raw material from the material basket 11 to the material taking and discharging station, the material taking tray 41 transfers the raw material at the material taking and discharging station to the processing table 52, the hidden cutting laser 57 performs hidden cutting processing on the raw material to form semi-cooked material, the material taking tray 41 transfers the semi-cooked material to the loading platform 61, the glue coating member 62 coats the semi-cooked material, the material taking tray 41 transfers the semi-cooked material to the processing table 52, the surface cutting laser performs surface cutting processing on the semi-cooked material to form clinker, the material taking tray 41 transfers the clinker to the loading platform 61, the cleaning member 63 cleans the clinker, the material taking tray 41 transfers the clinker to the material taking and discharging station, the material grabbing member 312 moves the clinker to the material basket 11, and the processing of a single lithium niobate wafer 100 ends;

[0108] The material basket 11 is raised or lowered so that the next lithium niobate wafer 100 is aligned with the loading and unloading port 120 , and the processing of the next lithium niobate wafer 100 is started. The above steps are repeated to complete the processing of all lithium niobate wafers 100 in the material basket 11 in sequence.

[0109] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A lithium niobate wafer laser composite cutting device, characterized in that: It includes a frame and a material storage mechanism, a material feeding mechanism, a material transfer mechanism, a laser processing mechanism and a glue coating and cleaning mechanism arranged on the frame; The material storage mechanism comprises a material basket, wherein the material basket has a plurality of material bins, each of which is used to store a raw material and a corresponding clinker formed after the raw material is processed; A material conveying mechanism, having a material taking and discharging station, and used for conveying the raw material in each of the silos to the material taking and discharging station, and conveying the clinker located at the material taking and discharging station back to the corresponding silo; The laser processing mechanism comprises a processing frame, a hidden cutting laser, a surface cutting laser and a processing table movably arranged along the X direction and the Y direction, wherein the processing head of the hidden cutting laser and the processing head of the surface cutting laser are respectively movably arranged on the processing frame along the Z direction, and the processing table has a material receiving and delivering position, a first processing position and a second processing position, wherein the first processing position is directly opposite to the processing head of the hidden cutting laser, and the hidden cutting laser is used to perform hidden cutting processing on raw materials to form semi-clinker, and the second processing position is directly opposite to the processing head of the surface cutting laser, and the surface cutting laser is used to perform surface cutting processing on the semi-clinker to form the clinker; The glue coating and cleaning mechanism comprises a loading platform, a glue coating member and a cleaning member, wherein the loading platform is provided with a loading station, the glue coating member is used to coat the semi-cooked material located at the loading station with glue, and the cleaning member is used to clean the clinker located at the loading station; The material transfer mechanism comprises a material taking tray arranged on the frame and movable along the X direction and the Z direction. The material taking tray can flow between the material taking and placing station, the material receiving and delivering station and the material loading station, and can absorb or release the raw material, the semi-cooked material or the clinker.

2. The lithium niobate wafer laser composite cutting equipment according to claim 1, characterized in that: The material feeding mechanism comprises a material grabbing component and a material guiding component; The material guide assembly comprises two guide rails arranged in parallel and at intervals along the Y direction, the material storage mechanism has a loading and unloading opening, one end of each of the guide rails faces the loading and unloading opening in the X direction, and the material taking and placing station is provided between the two guide rails; The material grabbing assembly includes a first X-direction linear module and a material grabbing piece. The first X-direction linear module is arranged on the frame, and the material grabbing piece is arranged at the driving end of the first X-direction linear module. The first X-direction linear module is used to drive the material grabbing piece to move along the X direction. The material grabbing piece is used to clamp a raw material from the loading and unloading ports and move the raw material to the two guide rails. The material grabbing piece drives the raw material to move along the two guide rails to the material taking and unloading station and then releases the raw material. The material grabbing piece is also used to clamp the clinker located at the material taking and unloading station and push the clinker to move along the two guide rails to enter the silo from the loading and unloading ports.

3. The lithium niobate wafer laser composite cutting equipment according to claim 2, characterized in that: The material guiding assembly further comprises a guide rail driving module, which is arranged on the frame and drives the two guide rails to be connected and used for driving the two guide rails to approach or move away from each other in the Y direction.

4. The lithium niobate wafer laser composite cutting equipment according to claim 2, characterized in that: The material storage mechanism also includes a partition and a lifting module; The partition is arranged at one end of the guide rail, and the partition is provided with the loading and unloading openings; The lifting module is arranged on the frame, and the material basket is connected to the driving end of the lifting module. The lifting module is used to drive the material basket to move in the Z direction. The material basket has a plurality of material bins spaced apart along the Z direction, and each of the material bins has a bin opening. As the material basket moves in the Z direction, the bin openings of the plurality of material bins can face the upper and lower material ports in sequence.

5. The lithium niobate wafer laser composite cutting equipment according to claim 1, characterized in that: The material transfer mechanism also includes a second X-axis linear module, a mounting seat and a Z-axis driving member; The second X-direction linear module is arranged on the frame, the mounting seat is connected to the driving end of the second X-direction linear module, and the second X-direction linear module is used to drive the mounting seat to move along the X direction; The Z-direction driving member is arranged on the mounting seat, the material taking tray is connected to the output end of the Z-direction driving member, and the Z-direction driving member is used to drive the material taking tray to move along the Z direction.

6. The lithium niobate wafer laser composite cutting equipment according to claim 5, characterized in that: The Z-direction driving members and the material taking trays are both provided with two, and the two Z-direction driving members are both provided on the mounting seat and are respectively driven and connected with one of the material taking trays.

7. The lithium niobate wafer laser composite cutting equipment according to claim 1, characterized in that: The glue cleaning mechanism also includes a base and a second rotating driving member, wherein the base is arranged on the frame, the material loading platform is rotatably arranged on the base, and the second rotating driving member is arranged in the base and drivingly connected to the material loading platform for driving the material loading platform to rotate; The glue coating member comprises a glue coating head which is adjustably arranged on the base platform, the glue coating head can be located above the material loading platform or withdrawn from the above the material loading platform, and the glue coating head is used to coat the semi-cooked material on the material loading platform with glue; The cleaning component comprises a cleaning nozzle which is adjustably arranged on the base platform. The cleaning nozzle can be located above the loading platform or withdrawn from above the loading platform. The cleaning nozzle is used to spray cleaning liquid onto the clinker on the loading platform.

8. The lithium niobate wafer laser composite cutting equipment according to claim 1, characterized in that: The laser processing mechanism also includes a base, a Y-direction drive module, an X-direction drive module and a first rotation drive member, the base is arranged on the frame, the Y-direction drive module is arranged on the base, the X-direction drive module is arranged at the output end of the Y-direction drive module, the first rotation drive member is arranged at the output end of the X-direction drive module and is driven to be connected to the processing table, the Y-direction drive module is used to drive the X-direction drive module to move along the Y direction, the X-direction drive module is used to drive the first rotation drive member to move along the X direction, and the first rotation drive member is used to drive the processing table to rotate with the Z axis as the rotation axis.

9. The lithium niobate wafer laser composite cutting equipment according to claim 8, characterized in that: It also includes a viewing angle imaging module and an industrial computer, wherein the industrial computer is equipped with a motion control module and two laser control modules; The industrial computer is used to input processing parameters, and the two laser control modules are used to control the switch and light output power of the hidden cutting laser and the switch and light output power of the surface cutting laser according to the processing parameters; The viewing angle imaging module is electrically connected to the industrial computer, and the viewing angle imaging module is used to obtain imaging data of the raw material or the semi-cooked material on the processing table. The industrial computer is used to receive the imaging data and control the Y-direction driving module, the X-direction driving module and the first rotating driving member to work according to the processing parameters and the imaging data through the motion control module.

10. The lithium niobate wafer laser composite cutting equipment according to claim 9, characterized in that: The laser processing mechanism also includes a first Z-direction moving module, a second Z-direction moving module and a third Z-direction moving module which are arranged on the processing frame and electrically connected to the motion control module. The motion control module is also used to control the operation of the first Z-direction moving module, the second Z-direction moving module and the third Z-direction moving module. The processing head of the hidden cutting laser is arranged at the driving end of the first Z-direction moving module, and the first Z-direction moving module is used to drive the processing head of the hidden cutting laser to move along the Z direction. The processing head of the surface cutting laser is arranged at the driving end of the second Z-direction moving module, and the second Z-direction moving module is used to drive the processing head of the surface cutting laser to move along the Z direction. The viewing angle imaging module is arranged at the driving end of the third Z-direction moving module, and the third Z-direction moving module is used to drive the viewing angle imaging module to move along the Z direction.

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