B / N co-doped high-graphitization-degree artificial graphite negative electrode material and preparation method thereof

Through B/N co-doping technology, the graphitization degree and electrochemical performance of artificial graphite negative electrode materials are improved, and the problem of excessive side reactions in existing materials at high temperatures is solved, thereby achieving high energy density, rate performance and cycle stability Improvement of sex.

CN119480966APending Publication Date: 2025-02-18合肥国轩新材料科技有限公司
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Patent Information

Application Number
CN202411587897.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-08
Publication Date
2025-02-18

AI Technical Summary

Technical Problem

The existing artificial graphite anode materials have excessive side reactions at high temperatures, resulting in low efficiency for the first time and it is difficult to introduce active sites on artificial graphite, which limits the improvement of energy density and rate performance.

Method used

B/N co-doped artificial graphite negative electrode material, and the raw material coke is fully mixed and carbonized with organic nitrogen and organic boron sources to form a B/N co-doped carbon layer to improve the graphitization of the material. degree and electrochemical properties.

Benefits of technology

The electrochemical effect of high energy density and high rate performance is achieved, while the first-time efficiency and cycle stability are improved, and the long cycle performance under large current density is significantly improved.

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Abstract

The invention provides a B / N co-doped high-graphitization-degree artificial graphite negative electrode material and a preparation method thereof, and the preparation method of the artificial graphite negative electrode material comprises the following steps: crushing raw material coke to obtain primary particles, and then mixing, granulating and shaping to obtain secondary particles; fully mixing the obtained secondary particles with an organic nitrogen source, and then pre-carbonizing to obtain a nitrogen-doped precursor; and fully mixing the obtained nitrogen-doped precursor with an organic boron source, and then carrying out secondary carbonization, shaping and graphitization to obtain the B / N co-doped high-graphitization-degree artificial graphite negative electrode material. The artificial graphite negative electrode material disclosed by the invention has high energy density and high rate performance, and meanwhile, the first efficiency can also be improved.
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Citation Information

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