Dynamic test system for high-power thyristor

The high-power thyristor dynamic testing system addresses manufacturing flaws by simulating and verifying thyristor performance under varying current rise rates, enhancing reliability and reducing defects through a controlled test environment.

CN222189415UActive Publication Date: 2024-12-17GLORYMV ELECTRONICS
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Patent Information

Application Number
CN202323430063.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2023-12-15
Publication Date
2024-12-17
Estimated Expiration
2033-12-15

AI Technical Summary

Technical Problem

Existing high-power semiconductor switching devices face challenges in reliably testing thyristors due to manufacturing process errors, leading to irreversible damage and secondary failures, primarily caused by high current rise rates (di/dt), which are difficult to test and screen separately.

Method used

A high-power thyristor dynamic testing system utilizing a waveform adjustment inductor, energy storage capacitor, and reverse absorption diode to simulate and verify the thyristor's ability to withstand rated voltage, current, and current rise rate di/dt, with a control unit managing the test process.

Benefits of technology

The system effectively simulates and screens thyristors for reliability, reducing defective rates and ensuring device availability by testing current rise rates dynamically, covering various voltage levels and specifications, suitable for large-scale applications.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a dynamic test system for a high-power thyristor, which is characterized in that a test element is connected onto a test lead connecting an output positive electrode and an output negative electrode of a high-voltage charging unit, the test element comprises a waveform adjusting inductor L and a tested thyristor SCR which are connected in series, and the test element is connected in parallel with an energy storage capacitor C and a reverse absorption diode D; the control end of the high-voltage charging unit is connected with the control unit through a signal line. The test system can be applied to verification test and device screening under the test conditions of different models, different voltage grades and different thyristors d i / dt.
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Description

Technical Field

[0001] The utility model relates to the field of high-voltage and high-current pulse power and the field of high-power semiconductor technology, and in particular to a high-power thyristor applied to an energy system. Background Art

[0002] In recent years, the application of pulse power technology has entered a rapid development stage, and the application of solid-state semiconductor devices has become a breakthrough point in the application of pulse power technology. High-power pulse thyristor solid-state semiconductor switching devices are often used in large scientific equipment, high-energy physics and pulse discharge systems as core components.

[0003] However, with the increasing demand for domestic application of semiconductor devices, domestic high-power semiconductor switching devices have entered a stage of rapid development. Most semiconductor discharge switching devices are composed of multiple series-parallel modes. In the actual application of thyristor batch processing and manufacturing and large scientific equipment, damage to a single thyristor will often cause damage to multiple power devices in the device and system, or cause the risk of secondary failure in the equipment.

[0004] The main reasons for thyristor failure include thyristor rated withstand voltage, rated current and current rise rate di / dt, etc. The current rise rate di / dt is the main reason for thyristor failure. The main reason is that when the thyristor is subjected to a large load in an instant, due to the large current rise rate, the thyristor anode current has no time to diffuse, resulting in excessive local junction temperature and damage. This kind of fault analysis is irreversible, and its decisive factor is mainly determined by the production and manufacturing process of the thyristor wafer, which is difficult to test and screen separately. Summary of the invention

[0005] The technical problem to be solved by the utility model is to realize a system which can safely and reliably complete the dynamic test of high-power thyristors.

[0006] In order to achieve the above-mentioned purpose, the technical solution adopted by the utility model is: a high-power thyristor dynamic testing system, a test element is connected to the test wire connecting the positive and negative poles of the high-voltage charging unit output, the test element is a waveform adjustment inductor L and a thyristor SCR to be tested connected in series, the test element is connected in parallel with a storage capacitor C and a reverse absorption diode D, and the control end of the high-voltage charging unit is connected to the control unit through a signal line.

[0007] The control unit communicates with the host computer and outputs a control signal to the high-voltage charging unit.

[0008] The power input end of the high-voltage charging unit is connected to three-phase alternating current, and the positive and negative output electrodes of the high-voltage charging unit provide a maximum of 10kV direct current high voltage for the test wire.

[0009] The energy storage capacitor C is a self-healing metallized film capacitor, which is used for energy storage capacity under rated working voltage to meet the system charging and discharging requirements.

[0010] The thyristor SCR under test is turned on and discharged through a synchronous signal to meet the circuit discharge requirement, and the rated voltage, rated current and current rise rate di / dt that the thyristor can withstand in the circuit are verified by utilizing the on-state characteristics after being turned on.

[0011] The reverse absorption diode D is a reverse peak diode, which is used to suppress the reverse oscillation of the circuit and absorb the reverse peak energy of the circuit.

[0012] The waveform adjustment inductor L is used to suppress the reverse oscillation of the circuit and absorb the reverse peak energy of the circuit.

[0013] The test lead is grounded.

[0014] The utility model high-power thyristor dynamic test system can be used for verification testing and device screening under different models, different voltage levels, and different thyristor di / dt test conditions. At the same time, in order to solve the batch application needs of a certain large-scale device and ensure the reliability of its device application, a dynamic test system is established. To overcome the thyristor processing and manufacturing process errors, reduce product defective rates, and improve device application availability, a dynamic test is established to simulate the current rise rate of different voltage levels of the single-chip thyristor before application, and through screening tests, the quality and reliability of the thyristor can be identified and judged in advance. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The following is a brief description of the contents expressed in each figure in the utility model specification and the marks in the figure:

[0016] Figure 1 This is a schematic diagram of the principle of a high-power thyristor dynamic test system;

[0017] Figure 2 This is the layout diagram of the high-power thyristor dynamic test system;

[0018] The marks in the above figure are: 1. control unit; 2. high voltage charging unit; 3. energy storage capacitor C; 4. waveform adjustment inductor L; 5. reverse absorption diode D; 6. thyristor SCR to be measured.

[0019] The following is a further detailed description of the specific implementation methods of the present invention, such as the shapes and structures of the components involved, the relative positions and connection relationships between the components, the functions and working principles of the components, the manufacturing process and the operation and use methods, etc., through the description of the embodiments with reference to the accompanying drawings, so as to help those skilled in the art to have a more complete, accurate and in-depth understanding of the inventive concept and technical solution of the present invention.

[0020] The thyristor dynamic test system can simulate and provide thyristors with a current rise rate that changes dynamically from 50A to 10kA / μs at a voltage level of 0-10kV, with a maximum rated peak current that does not exceed 30kA and a peak current bottom width that does not exceed 1ms. This basically covers all domestic application requirements for high-power pulse thyristor screening tests.

[0021] The high-power thyristor dynamic test system includes a control unit 1, a high-voltage charging unit 2, an energy storage unit, a switch discharge unit, a waveform adjustment unit and an anti-peak absorption unit. The circuit is shown in the attached figure. Figure 1 The schematic diagram of the circuit principle of the high-power thyristor dynamic test system is shown in the figure. The high-voltage charging unit 2 provides positive high voltage for the energy storage capacitor. The high voltage output of the charging unit is connected to the positive electrode of the energy storage capacitor C, and then connected to the anode of the solid thyristor SCR under test. The cathode of the thyristor SCR is connected to the positive electrode of the waveform adjustment inductor L4, and the negative electrode of the inductor L is grounded. The reverse absorption diode D5 is connected in parallel in the loop, and its cathode is connected to the anode of the thyristor SCR and the positive electrode of the energy storage capacitor C3. The anode is connected to the high-voltage charging unit 2, the negative electrode of the energy storage capacitor C3, and the negative electrode of the inductor L, and then connected to a grounding point in the system. The control unit 1 uses a contact control method to control the charging unit for charging control. At the same time, it provides a set of synchronous trigger signals to control the conduction and discharge of the thyristor SCR.

[0022] The high-voltage charging unit 2 provides the system with a maximum of 10kV DC high voltage, charges the energy storage capacitor, and when the charging voltage on the energy storage capacitor reaches the system setting parameters, the system gives a synchronous trigger signal, and the pulse energy is discharged by controlling the thyristor SCR to turn on, and the inductor L4 is adjusted to the high-voltage negative terminal through the waveform, and the diode D is used to absorb the reverse peak energy of the circuit. By adjusting the charging voltage on the energy storage capacitor, the current through the thyristor is controlled, so that the thyristor SCR current rise rate di / dt can be adjusted in the range of 0-10kA / μs.

[0023] Control unit 1 mainly realizes control and implements the remote control logic operation of the host computer, provides a synchronous trigger signal for the system, is responsible for controlling the power on / off and charging operation of the charging unit in the system, controls the opening and closing of the discharge switch, and monitors various states in the system for fault interlocking.

[0024] The high-voltage charging unit 2 adopts the series resonant soft switching technology, and obtains a 510V DC voltage after rectifying and filtering the three-phase AC power of the charging power supply. Then, through the high-frequency inverter circuit, the output after the bridge inverter is added to the primary of the high-frequency transformer through the resonant circuit, and then after isolation, boosting, rectification and filtering circuits, a 10kV DC high voltage is obtained.

[0025] The energy storage capacitor uses a self-healing metallized film capacitor to provide the system with energy storage capacity that meets its rated working voltage and meets the system's charging and discharging requirements.

[0026] The thyristor SCR is the thyristor switch to be tested. Its main function is to discharge through the synchronous signal to meet the circuit discharge requirements. The on-state characteristics after conduction are used to verify the rated voltage, rated current and current rise rate di / dt that the thyristor can withstand in the circuit.

[0027] Diode D is an anti-peak diode, and its main function is to suppress the reverse oscillation of the circuit and absorb the reverse peak energy of the circuit.

[0028] The inductor L is a waveform adjustment inductor, and its main function is to adjust the pulse shaping waveform to meet the matching of load and loop parameters.

[0029] All components can be fixed in the chassis, similar to a PC chassis, which makes it easy to carry and use.

[0030] In order to achieve the purpose of realizing a dynamic test of a high-power thyristor, it is only necessary to connect the circuit according to the above scheme, replace the thyristor SCR6 to be tested, and by adjusting the parameters of the charging voltage on the energy storage capacitor, the screening test application requirements of different models, different specifications, and different current rise rates di / dt can be realized. The structure is simple, the circuit principle is reliable, and the applicability is strong. It can meet the testing needs of thyristors of different specifications and parameters, and is suitable for different occasions. Especially for thyristors in large-scale large-scale device applications, it has certain screening test advantages.

[0031] The utility model high-power thyristor dynamic test system can provide dynamic test assistance when verifying the reliability screening of domestic semiconductor devices. The system only needs to replace the thyristor SCR6 to be tested, and by adjusting the parameters of the charging voltage on the energy storage capacitor, it can achieve the screening test application requirements of different models, different specifications, and different current rise rates di / dt, and its indicators have covered and met most of the application test capabilities of high-power thyristors in the domestic market.

[0032] The present invention is described above by way of example in conjunction with the accompanying drawings. It is obvious that the specific implementation of the present invention is not limited to the above-mentioned method. As long as various non-substantial improvements are made using the method concept and technical solution of the present invention, or the concept and technical solution of the present invention are directly applied to other occasions without improvement, they are all within the protection scope of the present invention.

Claims

1. A high-power thyristor dynamic test system, characterized in that: A test element is connected to the test wire connecting the positive and negative poles of the high-voltage charging unit output. The test element is a waveform adjustment inductor L and a thyristor SCR to be tested connected in series. The test element is connected in parallel with a storage capacitor C and a reverse absorption diode D. The control end of the high-voltage charging unit is connected to the control unit through a signal line.

2. The high-power thyristor dynamic test system according to claim 1 is characterized in that: The control unit communicates with the host computer and outputs a control signal to the high-voltage charging unit.

3. The high-power thyristor dynamic test system according to claim 1 is characterized in that: The power input end of the high-voltage charging unit is connected to three-phase alternating current, and the positive and negative output electrodes of the high-voltage charging unit provide a maximum of 10kV direct current high voltage for the test wire.

4. The high-power thyristor dynamic test system according to claim 1 is characterized in that: The energy storage capacitor C is a self-healing metallized film capacitor, which is used for energy storage capacity under rated working voltage to meet the system charging and discharging requirements.

5. The high-power thyristor dynamic test system according to claim 1 is characterized in that: The thyristor SCR under test is turned on and discharged through a synchronous signal to meet the circuit discharge requirement, and the rated voltage, rated current and current rise rate di / dt that the thyristor can withstand in the circuit are verified by utilizing the on-state characteristics after being turned on.

6. The high-power thyristor dynamic test system according to claim 1, characterized in that: The reverse absorption diode D is a reverse peak diode, which is used to suppress the reverse oscillation of the circuit and absorb the reverse peak energy of the circuit.

7. The high-power thyristor dynamic test system according to claim 1, characterized in that: The waveform adjustment inductor L is used to suppress the reverse oscillation of the circuit and absorb the reverse peak energy of the circuit.

8. The high-power thyristor dynamic test system according to claim 1, characterized in that: The test lead is grounded.