Heat dissipation structure of silicon carbide module

Abstract

The utility model relates to the technical field of silicon carbide module heat dissipation, and discloses a heat dissipation structure of a silicon carbide module, which comprises a silicon carbide power device body, the surface of the silicon carbide power device body is sleeved with a shell, and first heat-conducting fins are arranged on the two sides of an upper line of the silicon carbide power device body. The surface of the first heat-conducting fin at the top is fixedly connected with a plurality of first cooling fins, the two sides of the surface of each first heat-conducting fin are both provided with the first cooling fins, the two sides of the surface of the silicon carbide power device body are both fixedly connected with second heat-conducting fins, a heat dissipation mechanism is arranged in the shell, and one end of the surface of the shell is provided with a connector. And the connecting port sleeves the surface of the silicon carbide power device body. According to the utility model, through the arrangement of the second heat dissipation sheet and the second heat conduction sheet, the device can be adjusted according to different scenes in actual use, so that the heat dissipation effect is changed, and the convenience and practicability of the device are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of heat dissipation of silicon carbide modules, in particular to a heat dissipation structure of a silicon carbide module. Background Art

[0002] Silicon carbide power devices are power electronic devices made of silicon carbide materials. Silicon carbide has excellent physical properties, which enable silicon carbide power devices to operate in high temperature, high voltage and high frequency environments, with high energy efficiency and low loss. Silicon carbide power devices mainly include silicon carbide MOSFET (metal oxide semiconductor field effect transistor), silicon carbide IGBT (insulated gate bipolar transistor) and silicon carbide diodes. Compared with traditional silicon power devices, silicon carbide power devices have higher switching speeds and lower conduction and switching losses, and can achieve higher power density and higher operating frequency.

[0003] Silicon carbide power devices also have low on-resistance and high thermal stability, and can work stably in high temperature environments. However, most of the existing silicon carbide power devices are fixedly installed when in use, and cannot be adjusted in actual applications, resulting in the inability to change the heat dissipation effect on the surface when installed in different positions and different scenarios, thereby reducing the adjustability of the silicon carbide power devices in actual use, thereby reducing their use effect. Therefore, the above problems need to be solved urgently. Utility Model Content

[0004] The utility model aims to solve the shortcomings in the prior art and proposes a heat dissipation structure of a silicon carbide module.

[0005] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0006] A heat dissipation structure of a silicon carbide module comprises a silicon carbide power device body, a shell is provided on the surface of the silicon carbide power device body, first heat conductive sheets are provided on the upper and lower sides of the silicon carbide power device body, a plurality of first heat sinks are fixedly connected to the surface of the first heat conductive sheet on the top, first heat sinks are provided on both sides of the surface of the first heat conductive sheet, second heat conductive sheets are fixedly connected to both sides of the surface of the silicon carbide power device body, a heat dissipation mechanism is provided inside the shell, a connection port is provided at one end of the surface of the shell, the connection port is sleeved on the surface of the silicon carbide power device body, and through the provision of the second heat sink and the second heat conductive sheet, they can be adjusted according to different usage scenarios in actual use, so that the heat dissipation effect can be changed, thereby improving the convenience and practicality of the device.

[0007] As a further solution of the utility model, heat dissipation ports are provided at both the upper and lower ends of the shell, the heat dissipation port at the top is sleeved on the surfaces of multiple first heat sinks, the two ends of the heat dissipation port at the top are respectively provided on two first slots, the surface of the first heat conductive plate at the bottom is fixedly connected to a heat sink, second slots are provided on both sides of the surface of the heat sink, the heat dissipation port at the bottom is provided on the surface of the heat sink, and the two ends of the heat dissipation port at the bottom are respectively provided on two second slots, for dissipating heat from the device.

[0008] As a further scheme of the present utility model, the heat dissipation mechanism includes a second heat conductive sheet, and the second heat conductive sheet is provided with a plurality of them, and the plurality of second heat conductive sheets are respectively fixedly connected to the symmetrical sides of the surfaces of the two second heat conductive sheets, and the plurality of second heat conductive sheets are vertically arranged, and the symmetrical sides of the outer shell surface are vertically provided with a plurality of vertical grooves, and the plurality of the vertical grooves respectively correspond to the plurality of second heat conductive sheets, and the upper and lower ends of both sides of the outer shell are provided with a plurality of connecting grooves, and the plurality of the connecting grooves respectively correspond to the plurality of vertical grooves, and a fixing sheet is fixedly connected to one end of the surface of the silicon carbide power device body, and a stud is fixedly connected to the surface of the fixing sheet, and a circular groove is provided on the surface of the outer shell near one end of the fixing sheet, and the stud is sleeved inside the circular groove, and a knob is rotatably connected to the side of the outer shell surface near the circular groove, and the knob is sleeved on the surface of the stud, and the knob cooperates with the stud to adjust the position between the silicon carbide power device body and the outer shell, thereby changing the heat dissipation effect inside the device.

[0009] The beneficial effects of the utility model are:

[0010] 1. When in use, it can be adjusted according to different usage scenarios to change its heat dissipation effect, thereby improving the convenience and practicality of the device.

[0011] 2. When installed in a location with high heat generation, the silicon carbide power device body and the shell are slid, and the multiple second heat sinks will not block the vertical grooves and connecting grooves on the surface of the shell, thereby improving the ventilation effect inside the shell. The heat dissipation effect of the device is better through the action of the multiple second heat sinks.

[0012] 3. When the device is installed in a location with good ventilation, the plurality of second heat sinks will block the vertical slots and the connecting slots, and prevent dust from entering the interior during use. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a front view of a heat dissipation structure of a silicon carbide module proposed by the utility model;

[0014] Figure 2 This is a schematic diagram of the shell surface structure of a heat dissipation structure of a silicon carbide module proposed in the utility model;

[0015] Figure 3 This is a surface structure decomposition diagram of a heat dissipation structure of a silicon carbide module proposed by the utility model;

[0016] Figure 4 This is a cross-sectional view of the bottom structure of a heat dissipation structure of a silicon carbide module proposed by the utility model.

[0017] In the figure: 1. silicon carbide power device body; 2. housing; 21. vertical groove; 22. connecting groove; 23. heat dissipation port; 24. connecting port; 25. circular groove; 3. first heat sink; 31. first thermal conductive plate; 32. first notch; 4. second heat sink; 41. second thermal conductive plate; 5. fixing plate; 51. stud; 52. knob; 6. heat sink; 61. second notch. DETAILED DESCRIPTION

[0018] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0019] Reference Figure 1-Figure 4 A heat dissipation structure of a silicon carbide module comprises a silicon carbide power device body 1, a shell 2 is sleeved on the surface of the silicon carbide power device body 1, first heat conducting plates 31 are arranged on the upper and lower sides of the silicon carbide power device body 1, a plurality of first heat sinks 3 are fixedly connected to the surface of the top first heat conducting plate 31, first heat sinks 3 are arranged on both sides of the surface of the first heat conducting plate 31, second heat conducting plates 41 are fixedly connected to both sides of the surface of the silicon carbide power device body 1, a heat dissipation mechanism is arranged inside the shell 2, a connection port 24 is arranged at one end of the surface of the shell 2, and the connection port 24 is sleeved on the surface of the silicon carbide power device body 1. Through the arrangement of the second heat sink 4 and the second heat conducting plate 41, they can be adjusted according to different usage scenarios in actual use, so that the heat dissipation effect can be changed, thereby improving the convenience and practicality of the device.

[0020] Reference Figure 2 , Figure 3 and Figure 4 In a preferred embodiment, heat dissipation ports 23 are provided at both ends of the upper and lower ends of the shell 2, the top heat dissipation port 23 is sleeved on the surface of multiple first heat sinks 3, and the two ends of the top heat dissipation port 23 are respectively provided on the two first notches 32, and the surface of the bottom first heat conductive plate 31 is fixedly connected with a heat sink 6, and the surface of the heat sink 6 is provided with second notches 61 on both sides, and the bottom heat dissipation port 23 is provided on the surface of the heat sink 6, and the two ends of the bottom heat dissipation port 23 are respectively provided on the two second notches 61, which are used to dissipate heat from the device.

[0021] Reference Figure 2 , Figure 3and Figure 4 In a preferred embodiment, the heat dissipation mechanism includes a second heat conducting sheet 41, and the second heat conducting sheet 41 is provided with a plurality of them. The plurality of second heat conducting sheets 41 are respectively fixedly connected to the symmetrical sides of the surfaces of the two second heat dissipating sheets 4, and the plurality of second heat dissipating sheets 4 are vertically arranged. The surface of the shell 2 is symmetrically provided with a plurality of vertical grooves 21 vertically on both sides, and the plurality of vertical grooves 21 correspond to the plurality of second heat conducting sheets 41 respectively. The upper and lower ends of both sides of the shell 2 are provided with a plurality of connecting grooves 22, and the plurality of connecting grooves 22 correspond to the plurality of vertical grooves 21 respectively. A fixing sheet 5 is fixedly connected to one end of the surface of the silicon carbide power device body 1, and a stud 51 is fixedly connected to the surface of the fixing sheet 5. A circular groove 25 is provided on the surface of the shell 2 near one end of the fixing sheet 5, and the stud 51 is sleeved inside the circular groove 25. A knob 52 is rotatably connected to the side of the surface of the shell 2 near the circular groove 25, and the knob 52 is sleeved on the surface of the stud 51. The knob 52 cooperates with the stud 51 to adjust the position between the silicon carbide power device body 1 and the shell 2, thereby changing the heat dissipation effect inside the device.

[0022] From the above description, it can be seen that the above-mentioned embodiment of the utility model achieves the following technical effects: through the arrangement of the second heat sink 4 and the second heat conducting sheet 41, they can be adjusted according to different use scenarios during actual use, so that the heat dissipation effect can be changed, thereby improving the convenience and practicality of the device. When the device needs to be installed in a position with high heat generation, the knob 52 can be rotated during the installation process. Under the connection of the stud 51, the fixing sheet 5 and the silicon carbide power device body 1 will slide close to one end of the knob 52 at the same time. At this time, the first heat sink 3 The first heat conducting sheet 31 will also slide, and the second heat conducting sheet 41 and the second heat sink 4 will also slide accordingly. The multiple second heat sinks 4 will not block the vertical grooves 21 and the connecting grooves 22 on the surface of the shell 2, so that the ventilation effect inside the shell 2 is better. The heat dissipation effect of the device is better through the action of the multiple second heat sinks 4. When the device is installed in a position with better ventilation, it is not necessary to slide between the silicon carbide power device body 1 and the shell 2. At the same time, the multiple second heat sinks 4 will block the vertical grooves 21 and the connecting grooves 22, and dust will be prevented from entering the interior during use.

[0023] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0024] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0025] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0026] The above description is only the preferred embodiment of the utility model, and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.

Claims

1. A heat dissipation structure of a silicon carbide module, comprising a silicon carbide power device body (1), characterized in that: The surface of the silicon carbide power device body (1) is sleeved with a shell (2); first heat conducting plates (31) are arranged on both upper and lower sides of the silicon carbide power device body (1); a plurality of first heat sinks (3) are fixedly connected to the surface of the first heat conducting plate (31) at the top; first heat sinks (3) are arranged on both sides of the surface of the first heat conducting plate (31); second heat conducting plates (41) are fixedly connected to both sides of the surface of the silicon carbide power device body (1); a heat dissipation mechanism is arranged inside the shell (2); a connection port (24) is arranged at one end of the surface of the shell (2); and the connection port (24) is sleeved on the surface of the silicon carbide power device body (1).

2. The heat dissipation structure of a silicon carbide module according to claim 1, characterized in that: The housing (2) is provided with heat dissipation openings (23) at both upper and lower ends; the heat dissipation opening (23) at the top is sleeved on the surface of a plurality of first heat sinks (3); and the two ends of the heat dissipation opening (23) at the top are respectively provided on two first notches (32).

3. The heat dissipation structure of a silicon carbide module according to claim 2, characterized in that: The surface of the first heat conducting sheet (31) at the bottom is fixedly connected to a heat sink (6), and second notches (61) are provided on both sides of the surface of the heat sink (6). The heat dissipation opening (23) at the bottom is provided on the surface of the heat sink (6), and the two ends of the heat dissipation opening (23) at the bottom are respectively provided on the two second notches (61).

4. The heat dissipation structure of a silicon carbide module according to claim 1, characterized in that: The heat dissipation mechanism comprises a second heat conducting sheet (41), a plurality of the second heat conducting sheets (41) are provided, the plurality of the second heat conducting sheets (41) are respectively fixedly connected to two symmetrical sides of the surface of two second heat sinks (4), and the plurality of the second heat sinks (4) are all arranged vertically.

5. The heat dissipation structure of a silicon carbide module according to claim 4, characterized in that: A plurality of vertical grooves (21) are vertically provided on both symmetrical sides of the surface of the outer shell (2), and the plurality of vertical grooves (21) respectively correspond to the plurality of second heat conducting plates (41); and a plurality of connecting grooves (22) are provided at both upper and lower ends of both sides of the outer shell (2), and the plurality of connecting grooves (22) respectively correspond to the plurality of vertical grooves (21).

6. The heat dissipation structure of a silicon carbide module according to claim 5, characterized in that: A fixing plate (5) is fixedly connected to one end of the surface of the silicon carbide power device body (1), a stud (51) is fixedly connected to the surface of the fixing plate (5), a circular groove (25) is provided on the surface of the housing (2) near one end of the fixing plate (5), the stud (51) is sleeved inside the circular groove (25), and a knob (52) is rotatably connected to one side of the surface of the housing (2) near the circular groove (25), the knob (52) is sleeved on the surface of the stud (51), and the knob (52) cooperates with the stud (51).

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