Method for preparing suede-like surface structure of crystalline silicon solar cell

Abstract

The invention discloses a method for preparing a suede-like surface structure of a crystalline silicon solar cell. The method includes (1) preparing the suede-like surface structure with metal catalysis corrosion method, with the corrosion temperature of 8-80 DEG C and processing time of 10-1000 seconds, and (2) further correcting etching the suede-like surface microstructure, placing a silicon chip with the suede-like surface structure into a chemical erosion solution to carry out microstructure correcting etching, wherein the chemical erosion solution is selected from one of NaOH solution, KOH solution, mixed alkali solution of NaOH and NaClO. The photoelectric conversion efficiency is greatly improved by optimizing process parameters.

Description

technical field

[0001] The invention relates to a method for preparing a textured surface structure of a crystalline silicon solar cell, belonging to the technical field of solar cells. Background technique

[0002] With the wide application of solar cell components, photovoltaic power generation occupies an increasingly important proportion in new energy and has achieved rapid development. Among the current commercialized solar cell products, crystalline silicon (monocrystalline and polycrystalline) solar cells have the largest market share, maintaining a market share of more than 85%.

[0003] At present, in the production process of solar cells, the textured structure on the surface of silicon wafers can effectively reduce the surface reflectance of solar cells, which is one of the important factors affecting the photoelectric conversion efficiency of solar cells. In order to obtain a good textured structure on the surface of crystalline silicon solar cells to achieve a ...

Examples

Embodiment 1

[0037] A method for preparing a textured structure of a polycrystalline silicon solar cell, comprising the following steps:

[0038] (1) Clean the silicon wafer and remove the surface damage layer;

[0039] (2) Put the above-mentioned silicon chip into a chemical etching solution containing metal ions to form nanowires or porous silicon structures on the surface of the silicon chip; the temperature is 30°C, and the time is 200 seconds;

[0040] The metal ion is selected from silver ion;

[0041] The chemical etching solution is selected from HF and H 2 CrO 4 mixed solution; wherein, the concentration of HF is 10 mol / L, H 2 CrO 4 The concentration is 0.4 mol / L;

[0042] (3) Putting the above-mentioned silicon chip into the first chemical etching solution for corrective etching, so that the above-mentioned nanowire or porous silicon structure forms a nano-deep hole structure;

[0043] The first chemical etching solution is H 2 CrO 4 and HF mixed acid solution, wherein th...

Embodiment 2

[0055]A method for preparing a textured structure of a polycrystalline silicon solar cell, comprising the following steps:

[0056] (1) Clean the silicon wafer and remove the surface damage layer;

[0057] (2) Put the above-mentioned silicon chip into a chemical etching solution containing metal ions to form nanowires or porous silicon structures on the surface of the silicon chip; the temperature is 30°C, and the time is 200 seconds;

[0058] The metal ion is selected from silver ion;

[0059] The chemical etching solution is selected from HF and H 2 CrO 4 mixed solution; wherein, the concentration of HF is 10 mol / L, H 2 CrO 4 The concentration is 0.4 mol / L;

[0060] (3) Putting the above-mentioned silicon chip into a chemical etching solution for corrective etching, so that the above-mentioned nanowire or porous silicon structure forms a nano-concave structure;

[0061] The chemical corrosion solution is selected from tetramethylammonium hydroxide solution; its concent...

technical field

[0001] The invention relates to a method for preparing a textured surface structure of a crystalline silicon solar cell, belonging to the technical field of solar cells. Background technique

[0002] With the wide application of solar cell components, photovoltaic power generation occupies an increasingly important proportion in new energy and has achieved rapid development. Among the current commercialized solar cell products, crystalline silicon (monocrystalline and polycrystalline) solar cells have the largest market share, maintaining a market share of more than 85%.

[0003] At present, in the production process of solar cells, the textured structure on the surface of silicon wafers can effectively reduce the surface reflectance of solar cells, which is one of the important factors affecting the photoelectric conversion efficiency of solar cells. In order to obtain a good textured structure on the surface of crystalline silicon solar cells to achieve a ...

Examples

Embodiment 1

[0037] A method for preparing a textured structure of a polycrystalline silicon solar cell, comprising the following steps:

[0038] (1) Clean the silicon wafer and remove the surface damage layer;

[0039] (2) Put the above-mentioned silicon chip into a chemical etching solution containing metal ions to form nanowires or porous silicon structures on the surface of the silicon chip; the temperature is 30°C, and the time is 200 seconds;

[0040] The metal ion is selected from silver ion;

[0041] The chemical etching solution is selected from HF and H 2 CrO 4 mixed solution; wherein, the concentration of HF is 10 mol / L, H 2 CrO 4 The concentration is 0.4 mol / L;

[0042] (3) Putting the above-mentioned silicon chip into the first chemical etching solution for corrective etching, so that the above-mentioned nanowire or porous silicon structure forms a nano-deep hole structure;

[0043] The first chemical etching solution is H 2 CrO 4 and HF mixed acid solution, wherein th...

Embodiment 2

[0055]A method for preparing a textured structure of a polycrystalline silicon solar cell, comprising the following steps:

[0056] (1) Clean the silicon wafer and remove the surface damage layer;

[0057] (2) Put the above-mentioned silicon chip into a chemical etching solution containing metal ions to form nanowires or porous silicon structures on the surface of the silicon chip; the temperature is 30°C, and the time is 200 seconds;

[0058] The metal ion is selected from silver ion;

[0059] The chemical etching solution is selected from HF and H 2 CrO 4 mixed solution; wherein, the concentration of HF is 10 mol / L, H 2 CrO 4 The concentration is 0.4 mol / L;

[0060] (3) Putting the above-mentioned silicon chip into a chemical etching solution for corrective etching, so that the above-mentioned nanowire or porous silicon structure forms a nano-concave structure;

[0061] The chemical corrosion solution is selected from tetramethylammonium hydroxide solution; its concent...

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