Dual-function reactor

Abstract

The present invention provides a dual-function reaction furnace for the growth and etching of a surface material layer of a substrate to be processed, comprising the following parts: a furnace tube for placing a substrate to be processed; a furnace body located outside the furnace tube; a heating device located in the furnace body and outside the furnace tube; an inlet assembly connected to the interior of the furnace tube and used to introduce at least one of a growth gas, a growth liquid, an etching gas and an etching liquid into the furnace tube; an outlet assembly connected to the interior of the furnace tube; a furnace door assembly used to connect or isolate the furnace tube from the outside and to pass the substrate to be processed into or out of the furnace tube. The reaction furnace of the present invention supports the growth or etching reaction of the surface material layer of the substrate to be processed, and is a material growth and etching equipment with a simple structure, easy operation, convenient control, continuous production and high safety.

Description

Technical Field

[0001] The invention relates to the technical field of reaction equipment, in particular to a dual-function reaction furnace. Background Art

[0002] At present, the commonly used thin film growth equipment includes MOCVD, PECVD and tube furnace. Among them, MOCVD and PECVD equipment are expensive, with high maintenance costs, complicated processes and low production efficiency. Tube furnace equipment is low-cost and can accommodate batches of reactants at the same time for reaction, but due to the limitations of equipment process conditions, its scope of use is relatively narrow, limited to thin film growth or annealing under specific atmosphere conditions.

[0003] Current tube furnace equipment can generally only support the growth reaction of the material layer on the surface of the reactant, but cannot support the etching reaction of removing the material layer on the surface of the reactant because the equipment components generally cannot work in a high temperature and corrosive environment. The use of general plasma dry etching or wet etching has the problem of expensive equipment and high maintenance costs.

[0004] In addition, the reaction of tubular furnace equipment is generally carried out at high temperature. Therefore, after the reaction process is completed, the inside of the equipment is still in a high temperature state. The heating system needs to be shut down and the temperature of the furnace body needs to drop to room temperature before the reactants can be unloaded and the next batch of reactants can be loaded for reaction. This also affects the utilization efficiency of the equipment.

[0005] Therefore, it is necessary to propose a new reactor equipment to solve the above problems. Summary of the invention

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a new reaction furnace equipment for solving the problems of single function and low utilization efficiency of the existing tubular furnace.

[0007] In order to achieve the above-mentioned object and other related objects, the present invention provides a dual-function reaction furnace, which is used for growing and etching a surface material layer of a substrate to be processed, and the dual-function reaction furnace comprises:

[0008] A furnace tube for placing the substrate to be processed;

[0009] A furnace body, located outside the furnace tube;

[0010] A heating device is located in the furnace body and outside the furnace tube;

[0011] The furnace tube is connected to the inside of the furnace tube and is used to introduce growth gas, growth liquid, etching gas and etching liquid into the furnace tube.

[0012] an inlet assembly for at least one of the corrosive fluids;

[0013] An outlet communicated with the interior of the furnace tube;

[0014] A furnace door assembly is used to connect or isolate the furnace tube from the outside and to transfer the wafers to be processed into or out of the furnace tube. The furnace door assembly is located at at least one end of the furnace tube.

[0015] As a preferred solution of the present invention, the inlet component comprises:

[0016] a first inlet connected to the interior of the furnace tube and used for introducing a growth gas or a growth liquid into the furnace tube;

[0017] A second inlet is communicated with the interior of the furnace tube and is used for introducing etching gas or etching liquid into the furnace tube.

[0018] As a preferred solution of the present invention, the inlet component comprises:

[0019] a first inlet communicating with the interior of the furnace tube and used for introducing growth gas into the furnace tube;

[0020] a second inlet communicating with the interior of the furnace tube and used for introducing a growth liquid into the furnace tube;

[0021] A third inlet communicated with the interior of the furnace tube and used for introducing etching gas into the furnace tube;

[0022] A fourth inlet is communicated with the interior of the furnace tube and is used for introducing etching liquid into the furnace tube.

[0023] As a preferred solution of the present invention, the furnace tube is a horizontal tube furnace or a vertical tube furnace.

[0024] As a preferred solution of the present invention, the furnace door assembly comprises:

[0025] A loading and unloading conveying system, the loading and unloading conveying system comprising a slide rail and a carrying platform for placing the substrate to be processed, the slide rail being located outside one end of the furnace tube; the carrying platform being located on the slide rail and being able to slide on the slide rail;

[0026] A furnace door is fixed to a side of the supporting platform away from the furnace tube, and a distance from the furnace door to a side of the supporting platform close to the furnace tube is less than a length of the furnace tube, so as to ensure that the furnace door isolates the furnace tube from the outside when the supporting platform is moved into the furnace tube.

[0027] As a preferred solution of the present invention, the furnace door assembly comprises:

[0028] A furnace door, one side of which is movably connected to the furnace body, wherein when the furnace door is opened, the furnace tube is connected to the outside, and when the furnace door is closed, the furnace tube is isolated from the outside;

[0029] A loading and unloading conveying system is used to convey the substrate to be processed into the furnace tube, and convey the substrate to be processed after processing out of the furnace tube. The loading and unloading conveying system is located on one side of the furnace door.

[0030] As a preferred solution of the present invention, the loading and unloading conveying system includes at least one of a rectangular coordinate manipulator, a spherical coordinate manipulator, an articulated manipulator or a cylindrical coordinate manipulator.

[0031] As a preferred solution of the present invention, the furnace door assembly further includes:

[0032] A flange is located between the furnace door and the furnace body and is sleeved on the outer periphery of one end of the furnace tube close to the furnace door;

[0033] A sealing ring is located between the flange and the furnace door.

[0034] As a preferred solution of the present invention, the heating device is divided into multiple sections and surrounds the outer periphery of the furnace tube to divide the furnace tube into multiple heating areas.

[0035] As a preferred solution of the present invention, the furnace tube includes a constant temperature zone, and the length of the constant temperature zone accounts for 1 / 3 to 1 of the total length of the furnace tube.

[0036] As a preferred embodiment of the present invention, the dual-function reactor further comprises:

[0037] A supply source for providing at least one of a growth gas, a growth liquid, an etching gas, and an etching liquid;

[0038] a first pipeline, one end of which is connected to the supply source and the other end of which is connected to the inlet assembly;

[0039] Power pump;

[0040] The second pipeline has one end connected to the power pump and the other end connected to the outlet.

[0041] As a preferred solution of the present invention, the dual-function reactor also includes a safety seal and negative pressure exhaust system for preventing gas leakage, and the safety seal and negative pressure exhaust system are respectively arranged on the periphery of the connection between the inlet and the first pipeline and the periphery of the connection between the outlet and the second pipeline.

[0042] As a preferred solution of the present invention, the safety sealing and negative pressure exhaust system comprises:

[0043] A box body, respectively sleeved on the periphery of the connection between the inlet and the first pipeline and the periphery of the connection between the outlet and the second pipeline;

[0044] An exhaust duct is communicated with the interior of the box.

[0045] As a preferred embodiment of the present invention, the dual-function reactor further comprises:

[0046] Treatment plants for treating waste gases or liquid waste;

[0047] The third pipeline has one end connected to the power pump and the other end connected to the processing device.

[0048] As a preferred solution of the present invention, the dual-function reaction furnace further comprises a filtering device for filtering the gas or liquid discharged from the furnace tube, and the filtering device is located on the second pipeline.

[0049] As a preferred solution of the present invention, the dual-function reactor further comprises a cooling system, and the cooling system comprises:

[0050] The cooling pipeline is located outside the heating device and has a distance from the heating device, and can be a pipeline located inside the furnace body or a pipeline surrounding the furnace body.

[0051] A refrigerant source is connected to the cooling pipeline, and the refrigerant source can be a cooling gas source or a cooling liquid source.

[0052] The dual-function reactor of the present invention has the following beneficial effects: the dual-function reactor of the present invention can grow a material layer on the surface of the substrate to be processed, and can also etch the material layer on the surface of the substrate to be processed, and has the dual functions of growth and etching; at the same time, the furnace door assembly in the dual-function reactor of the present invention can realize the loading and unloading of the substrate to be processed at high temperature, without the need to cool down to room temperature after the processing, thereby significantly improving its utilization efficiency. The dual-function reactor of the present invention also has the advantages of simple structure, easy operation, convenient control, sustainable production and high safety. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figure 1 It shows a schematic cross-sectional structure diagram of the dual-function reaction furnace in the first embodiment of the present invention when the furnace door is opened.

[0054] Figure 2 It is a schematic diagram of the cross-sectional structure of the dual-function reaction furnace in the first embodiment of the present invention when the furnace door is closed.

[0055] Figure 3 Shown is a specific structural diagram of an inlet assembly of a dual-function reactor provided in Example 1 of the present invention, which includes two inlets.

[0056] Figure 4 Shown is a specific structural diagram of an inlet assembly of a dual-function reactor provided in Example 1 of the present invention, which includes four inlets.

[0057] Figure 5 Shown is the specific structural diagram of the safety seal and negative pressure exhaust system.

[0058] Figure 6 Shown is a schematic cross-sectional structure diagram of a dual-function reactor provided in Embodiment 2 of the present invention.

[0059] Figure 7 and Figure 8 Display as Figure 6 Side view in direction A, where: Figure 7 The furnace door is a flip-type furnace door. Figure 8 The furnace door in the furnace is a side-opening furnace door.

[0060] Component number description

[0061] 101 Furnace pipe

[0062] 102 Furnace body

[0063] 103 Heating device

[0064] 104 Imported components

[0065] 104a First Import

[0066] 104b Second import

[0067] 104c Third Import

[0068] 104d Fourth Import

[0069] 105 Exit

[0070] 106 Furnace door assembly

[0071] 106a Furnace door

[0072] 106b Loading and unloading conveyor system

[0073] 106c Carrying platform

[0074] 106d Slide Rail

[0075] 106e Flange

[0076] 106f Seal

[0077] 107 Substrate to be processed

[0078] 108 Heating Zones

[0079] 108a First heating zone

[0080] 108b Second heating zone

[0081] 108c Third heating zone

[0082] 109 Supply Source

[0083] 110 First pipeline

[0084] 111 Power Pump

[0085] 112 Second pipeline

[0086] 113 Safety seal and negative pressure exhaust system

[0087] 113a Cabinet

[0088] 113b Exhaust duct

[0089] 113c Air volume adjustment baffle

[0090] 114 Connection between furnace body and inlet assembly

[0091] 115 Processing device

[0092] 116 Third pipeline

[0093] 117 Filter device

[0094] 118 Cooling System

[0095] 118a Cooling line

[0096] 118b Refrigerant source

[0097] 201 Furnace body

[0098] 202 Furnace door

[0099] 203 Hinge

[0100] 204 Loading and unloading conveyor system DETAILED DESCRIPTION

[0101] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0102] See also Figures 1 to 8It should be noted that the illustrations provided in this embodiment are only schematic illustrations of the basic concept of the present invention. Although the illustrations only show components related to the present invention and are not drawn according to the number, shape and size of components in actual implementation, the form, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout may also be more complicated.

[0103] Embodiment 1

[0104] like Figure 1 and Figure 2 As shown, the present invention provides a dual-function reaction furnace, which is used for growing and etching a surface material layer of a substrate 107 to be processed, and comprises: a furnace tube 101 for placing the substrate 107 to be processed; a furnace body 102, which is located at the periphery of the furnace tube 101; a heating device 103, which is located in the furnace body 102 and at the periphery of the furnace tube 101; an inlet component 104 which is connected to the interior of the furnace tube 101 and is used to introduce at least one of a growth gas, a growth liquid, an etching gas and an etching liquid into the furnace tube 101; an outlet 105, which is connected to the interior of the furnace tube 101; a furnace door component 106 which is used to connect or isolate the furnace tube 101 from the outside and to transmit the substrate 107 to be processed into or out of the furnace tube 101, and the furnace door component 106 is located at at least one end of the furnace tube 101.

[0105] The furnace tube materials used in the dual-function reactor described in the present invention include quartz, graphite, silicon carbide, ceramics or corrosion-resistant metals. The furnace tube 101 can be customized according to actual use needs, and its size can accommodate the substrate 107 to be processed for the required operation at one time. As a preferred embodiment of the present invention, the working temperature of the furnace tube 101 is between 600 degrees Celsius and 1100 degrees Celsius. At the working temperature, the structure of the furnace tube can remain stable for a long time. The furnace body 102 is located at the periphery of the furnace tube 101, and the furnace body 102 is composed of high-temperature resistant insulation materials such as insulation cotton or graphite wool, which can maintain the working temperature inside the furnace tube 101 within a stable range. A heating device 103 is arranged between the furnace tube 101 and the furnace body 102 to heat the furnace tube 101 and maintain the temperature of the furnace tube within a stable working temperature range. The heating device 103 can use at least one heating system of a furnace wire, a lamp tube or a radio frequency system. The furnace tube 101 is connected to the inlet assembly 104, and at least one of a growth gas, a growth liquid, an etching gas and an etching liquid is introduced into the furnace tube 101 through the inlet assembly 104. By introducing at least one of the above growth gas and growth liquid into the furnace tube 101, a material layer can be grown on the surface of the substrate 107 to be processed in the furnace tube 101; by introducing at least one of the above etching gas and etching liquid into the furnace tube 101, the material layer on the surface of the substrate 107 to be processed in the furnace tube 101 can be etched. The furnace tube 101 also needs to be connected to the outlet 105, through which the residual reaction gas or liquid in the furnace tube 101 after the reaction is completed is discharged. In this way, the residual corrosive gas or liquid after the reaction is completed can be prevented from remaining in the furnace tube 101, so as to avoid harm when loading and unloading reactants. The furnace tube 101 is connected or isolated with the outside by the furnace door assembly 106, and whether the furnace tube 101 is connected with the outside is controlled by opening and closing the furnace door 106a. At the same time, the substrate 107 to be processed is loaded or unloaded into the furnace tube 101 through the furnace door assembly 106 .

[0106] As an example, see Figure 1 , the furnace tube 101 is a horizontal tube furnace or a vertical tube furnace. Figure 1 Shown in is a kind of horizontal design.Certainly, the present invention also can adopt vertical design, and this change can not affect basic conception of the present invention.

[0107] As an example, the furnace tube 101 may be, but is not limited to, a quartz furnace tube, a graphite furnace tube, a silicon carbide furnace tube, a ceramic furnace tube, or a corrosion-resistant metal material furnace tube.

[0108] As an example, see Figure 1The furnace door assembly 106 includes: a loading and unloading conveying system 106b, the loading and unloading conveying system 106b includes a slide rail 106d and a carrier platform 106c for placing the substrate to be processed 107, the slide rail 106d is located outside one end of the furnace tube 101; the carrier platform 106c is located on the slide rail 106d and can slide on the slide rail 106d; the furnace door 106a, the furnace door 106a is fixed to the side of the carrier platform 106c away from the furnace tube 101, and the distance from the furnace door 106a to the side of the carrier platform 106c close to the furnace tube 101 is less than the length of the furnace tube 101, so as to ensure that when the carrier platform 106c is moved into the furnace tube 101, the furnace door 106a isolates the furnace tube 101 from the outside.

[0109] As an example, the slide rail 106d preferably uses a dust-free slide rail to prevent the dust generated during loading from contaminating the surface of the reactants.

[0110] As an example, see Figure 1 The furnace door assembly 106 includes: a furnace door 106a, one side of which is movably connected to the furnace body 102, when the furnace door 106a is opened, the furnace tube 101 is connected to the outside, and when the furnace door 106a is closed, the furnace tube 101 is isolated from the outside; a loading and unloading conveying system for conveying the substrate 107 to be processed into the furnace tube 101, and conveying the substrate 107 to be processed after processing out of the furnace tube 101, and the loading and unloading conveying system is located on one side of the furnace door.

[0111] As an example, see Figure 1 The loading and unloading conveying system 106b includes at least one of a rectangular coordinate manipulator, a spherical coordinate manipulator, an articulated manipulator, or a cylindrical coordinate manipulator. Figure 1 As shown, the loading and unloading conveying system 106b of the present invention adopts the design of the rectangular coordinate manipulator, which is composed of a carrying platform 106c and a slide rail 106d.

[0112] In one example, see Figure 3 , Figure 3 1 is a detailed structural diagram of the inlet assembly 104. The inlet assembly 104 includes: a first inlet 104a connected to the interior of the furnace tube 101 and used to introduce growth gas or growth liquid into the furnace tube 101; and a second inlet 104b connected to the interior of the furnace tube 101 and used to introduce etching gas or etching liquid into the furnace tube 101. Figure 3As shown in the figure, as a preferred solution of the present invention, one end of the inlet assembly 104 is connected to the inside of the furnace tube 101 through the connection part 114 between the furnace body and the inlet assembly, and the other end is connected to the gas or liquid reaction source through a pipeline, that is, the other end of the first inlet 104a and the second inlet 104b is connected through the connection part 114 of the furnace body and the inlet assembly. Figure 1 and Figure 2 The first pipeline 110 shown in FIG. 1 is connected to the supply source 109 .

[0113] In another example, see Figure 4 , Figure 4 The figure shows a specific structural diagram of the inlet assembly 104. The inlet assembly 104 includes: a first inlet 104a connected to the interior of the furnace tube 101 and used to introduce growth gas into the furnace tube 101; a second inlet 104b connected to the interior of the furnace tube 101 and used to introduce growth liquid into the furnace tube 101; a third inlet 104c connected to the interior of the furnace tube 101 and used to introduce etching gas into the furnace tube 101; and a fourth inlet 104d connected to the interior of the furnace tube 101 and used to introduce etching liquid into the furnace tube 101. Figure 4 As shown in the figure, as a preferred solution of the present invention, one end of the inlet assembly 104 is connected to the inside of the furnace tube 101 through the connection part 114 between the furnace body and the inlet assembly, and the other end is connected to the gas or liquid reaction source through a pipeline, that is, the other ends of the first inlet 104a, the second inlet 104b, the third inlet 104c and the fourth inlet 104d are connected through the connection part 114 as shown in the figure. Figure 1 and Figure 2 The first pipeline 110 shown in FIG. 1 is connected to the supply source 109 .

[0114] It should be noted that Figure 3 and Figure 4 The connection portion 114 between the furnace body and the inlet assembly shown in the figure may be a part of the furnace body 102 itself.

[0115] As an example, see Figure 1 The furnace door assembly 106 further includes: a flange 106e, located between the furnace door 106a and the furnace body 102, and sleeved on the outer periphery of one end of the furnace tube 101 close to the furnace door 106a; and a sealing ring 106f, located between the flange 106e and the furnace door 101. The sealing structure formed by the sealing ring 106f and the flange 106e can isolate the internal atmosphere of the furnace tube 101 from the outside, so that the internal reaction gas will not leak to the outside.

[0116] As an example, the sealing ring 106f may be, but is not limited to, an O-ring, and the material of the sealing ring 106f may be, but is not limited to, fluorine-doped (F) rubber or perfluoro rubber. The number of the sealing rings 106f may be set to one, two or more according to actual needs.

[0117] As an example, see Figure 1 The heating device 103 is divided into multiple sections and surrounds the outer periphery of the furnace tube 101 to divide the furnace tube 101 into multiple heating areas 108. Figure 1 As shown in the figure, the heating area 108 is divided into three areas: a first heating area 108a, a second heating area 108b and a third heating area 108c. The heating areas 108 can be temperature-controlled by the heating device 103 to ensure that the temperature of the area where the substrate 107 to be processed is located is stably maintained at the working temperature.

[0118] As an example, the heating device 103 can be a heating furnace wire, a lamp tube or a radio frequency heating device, etc. It should be noted that when the heating device 103 is a lamp tube or a radio frequency heating device, the heating device 103 needs to be exposed in the furnace tube 101 instead of being sealed in the furnace body 102.

[0119] As an example, see Figure 1 The furnace tube 101 includes a constant temperature zone, the length of which is less than or equal to the total length of the furnace tube 101. Preferably, the length of the constant temperature zone accounts for 1 / 3 to 1 / 2 of the total length of the furnace tube 101. For example Figure 1 As shown in the figure, the temperature of the second heating zone 108b in the heating area 108 is controlled to be constant at the working temperature by the heating device 103 to form the constant temperature zone, and the length of the constant temperature zone is 1 / 3 of the length of the furnace tube 101. Of course, in this example, the first heating zone 108a and the third heating zone 108c can also be adjusted to increase the range of the constant temperature zone to the length of the entire furnace tube 101.

[0120] As an example, see Figure 1The dual-function reactor also includes a supply source 109 for providing at least one of a growth gas, a growth liquid, an etching gas and an etching liquid; a first pipeline 110, one end of which is connected to the supply source 109 and the other end is connected to the inlet assembly 104; a power pump 111; a second pipeline 112, one end of which is connected to the power pump 111 and the other end is connected to the outlet 105. The growth gas, the growth liquid, the etching gas or the etching liquid is used as the supply source 109, and after the inlet assembly 104 is connected through the first pipeline 110, the reaction source is introduced into the furnace tube 101. After the reaction is completed, the remaining reaction gas is discharged from the outlet 105. Since the second pipeline 112 is connected to the power pump 111, it can be ensured that the remaining reaction gas in the furnace tube 101 is cleanly extracted.

[0121] As an example, see Figure 1 The dual-function reactor also includes a safety seal and negative pressure exhaust system 113 for preventing gas leakage. The safety seal and negative pressure exhaust system 113 are respectively arranged on the periphery of the connection between the inlet component 104 and the first pipeline 110 and the periphery of the connection between the outlet 105 and the second pipeline 112.

[0122] As an example, see Figure 5 , the safety seal and negative pressure exhaust system 113 includes: a box body 113a, which is respectively placed on the periphery of the connection between the inlet component 104 and the first pipeline 110 and the periphery of the connection between the outlet 105 and the second pipeline 112; an exhaust duct 113b, which is connected to the inside of the box body 113a; and an air volume regulating baffle 113c located at the interface of the exhaust duct 113b. Through the exhaust duct 113b, a negative pressure can be maintained in the box body 113a, so as to ensure that if any reaction gas leaks from the furnace tube 101, it can be promptly extracted through the exhaust duct 113b and will not leak into the external environment. By opening and closing the air volume regulating baffle 113c, the exhaust rate in the box body 113a can be adjusted to ensure that the box body 113a maintains a negative pressure environment. It should be noted that, Figure 5 The case where the box body 113a is placed around the connection between the inlet assembly 104 and the first pipeline 110 is shown in FIG. 1 . The case where the box body 113a is placed around the connection between the outlet 105 and the second pipeline 112 is shown in FIG. Figure 5 The layout shown is designed identically.

[0123] As an example, the dual-function reactor further includes: a treatment device 115 for treating waste gas or waste liquid; a third pipeline 116 , one end of which is connected to the power pump 111 , and the other end of which is connected to the treatment device 115 .

[0124] As an example, the dual-function reactor further includes a filter device 117 for filtering the gas or liquid discharged from the furnace tube 101, and the filter device 117 is located on the second pipeline 112. Since the remaining reaction gas or liquid discharged may be corrosive or toxic, the harmful components therein can be filtered through the filter device 117 to ensure that the final discharged gas or liquid is harmless.

[0125] As an example, the dual-function reactor further includes a cooling system 118, and the cooling system 118 includes: a cooling pipeline 118a, which is located outside the heating device 113 and is spaced apart from the heating device 113. The cooling pipeline 118a can be a pipeline located inside the furnace body, or a pipeline surrounding the furnace body, for example Figure 1 In the structure shown in FIG. 1 , the cooling pipeline 118a is a pipeline located in the furnace body. The refrigerant source 118b is connected to the cooling pipeline 118a. The refrigerant source 118b can be a cooling gas source or a cooling liquid source. By using the cooling system 118, the cooling process of the furnace tube 101 can be faster, and the ambient temperature can be effectively reduced to maintain a constant temperature production environment in the workshop.

[0126] As an example, the first pipeline 110, the second pipeline 112, the third pipeline 116 and other pipelines can be but are not limited to stainless steel pipelines, and the inside of the pipeline is coated with a coating, which can be a PTFE (polytetrafluoroethylene) coating, a ceramic coating or an enamel coating, etc.

[0127] The embodiments of the present invention are described in detail above, and the application examples of the present invention will be described below.

[0128] See also Figure 1 and Figure 2 The dual-function reactor of the present invention can conveniently and efficiently complete the growth or etching process of the surface material layer of the substrate 107 to be processed. The operation method of the dual-function reactor of the present invention is as follows:

[0129] Before the substrate 107 to be processed is placed in the furnace, the furnace door 106a of the dual-function reaction furnace is in an open state. Figure 1 As shown, the carrier 106c moves to the rightmost end via the slide rail 106d. At this time, the wafer 107 to be processed is placed on the carrier 106c. After the wafer 107 is loaded, the carrier 106c moves along the slide rail 106d into the furnace tube 101 until the furnace door 106a is closed and a sealing structure is formed by the sealing ring 106f and the flange 106e. Figure 2As shown. The temperature of the required constant temperature zone is adjusted to the working temperature by the heating device 103; at the same time, the atmosphere in the furnace tube 101 is extracted through the outlet 105 by the power pump 111. The supply source 109 introduces the required reaction gas or liquid source into the furnace tube 101 through the inlet assembly 104. The reaction gas or liquid source can be a raw gas or liquid source, or an etching gas or liquid source. It is determined according to the actual process whether to grow a material layer or etch a material layer, so that the reaction atmosphere required for the reaction is maintained in the furnace tube 101. The reaction is carried out under a stable reaction temperature and reaction atmosphere. After the reaction is completed, the remaining reaction gas in the furnace tube 101 is extracted through the outlet 105 by the power pump 111, and at the same time, the heating device 103 adjusts the temperature in the furnace tube 101 to the loading and unloading temperature. For example, the preferred loading and unloading temperature in the present invention is 60°C to 700°C. When the temperature in the furnace tube 101 drops to the loading and unloading temperature, the support platform 106c is moved to the rightmost end by the slide rail 106d. At this time, the furnace door 106a is opened again. Figure 1 As shown, the substrate 107 to be processed after the reaction is completed is taken out by the loading and unloading conveying system 204. This design does not need to reduce the temperature in the furnace tube 101 to room temperature, but to 60°C to 700°C, which reduces the waiting time for cooling and improves the utilization rate of the reaction furnace equipment.

[0130] Embodiment 2

[0131] See also Figures 6 to 8The present invention further provides a dual-function reactor. The dual-function reactor described in this embodiment has a substantially similar structure to that described in Embodiment 1. The difference between the two is only in the type of the furnace door assembly 106 and the furnace body: the dual-function reactor described in Embodiment 1 is a horizontal reactor. The furnace door assembly 106 includes a furnace door 106a and a loading and unloading conveying system 106b. The loading and unloading conveying system 106b includes a slide rail 106d and a carrier 106c for placing the substrate to be processed 107. The slide rail 106d is located on the outer side of one end of the furnace tube 101. The carrier 106c is located on the slide rail 106d and can slide on the slide rail 106d. The furnace door 106a is a sliding furnace door. The furnace door 106a is fixed to The supporting platform 106c is away from one side of the furnace tube 101, and the distance from the furnace door 106a to the supporting platform 106c close to the furnace tube 101 is less than the length of the furnace tube 101, so as to ensure that when the supporting platform 106c is moved into the furnace tube 101, the furnace door 106a isolates the furnace tube 101 from the outside; and in this embodiment, the dual-function reactor is a vertical reactor, and the furnace door assembly 106 includes a furnace door 106a and a loading and unloading conveying system 106b, and one side of the furnace door 106 is movably connected to the furnace body 102; the loading and unloading conveying system is located on one side of the furnace door, and the loading and unloading conveying system 204 can adopt at least one of a rectangular coordinate manipulator, a spherical coordinate manipulator, an articulated manipulator or a cylindrical coordinate manipulator.

[0132] In one example, if Figure 7 As shown, the furnace door 106a is a flip-up furnace door, and a furnace door 202 is arranged on one side of the furnace body 201. After the furnace door 202 is opened upward through its upper hinge 203, the substrate to be processed 107 is loaded or unloaded by the loading and unloading conveying system 204. The loading and unloading conveying system 204 can adopt at least one of a rectangular coordinate manipulator, a spherical coordinate manipulator, an articulated manipulator, or a cylindrical coordinate manipulator.

[0133] In another example, if Figure 8 As shown, the furnace door 106a is a side-opening furnace door, and a furnace door 202 is arranged on one side of the furnace body 201. After the furnace door 202 is opened by its side hinge 203, the substrate to be processed 107 is loaded or unloaded by the loading and unloading conveying system 204. The loading and unloading conveying system 204 can adopt at least one of a rectangular coordinate manipulator, a spherical coordinate manipulator, an articulated manipulator, or a cylindrical coordinate manipulator.

[0134] In summary, the present invention provides a dual-function reaction furnace for growing and etching a material layer on the surface of a substrate 107 to be processed, comprising the following parts: a furnace tube for placing the substrate 107 to be processed; a furnace body located outside the furnace tube; a heating device located in the furnace body and outside the furnace tube; an inlet assembly connected to the inside of the furnace tube and used to introduce at least one of a growth gas, a growth liquid, an etching gas and an etching liquid into the furnace tube; an outlet assembly connected to the inside of the furnace tube; a furnace door assembly used to connect or isolate the furnace tube from the outside and to pass the substrate 107 to be processed into or out of the furnace tube. The reaction furnace of the present invention can realize the growth or etching reaction of the material layer on the surface of the substrate to be processed, and is a device that has a simple structure, is easy to operate, is easy to control, can be continuously produced, and has high safety and can realize the dual functions of growth and etching.

[0135] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A dual-function reactor, characterized in that: The dual-function reactor is used for the growth and etching of the surface material layer of the substrate to be processed, and the dual-function reactor comprises: A furnace tube for placing the substrate to be processed; A furnace body, located outside the furnace tube; A heating device is located in the furnace body and outside the furnace tube. The heating device is distributed in multiple sections around the furnace tube to divide the furnace tube into multiple heating areas. The heating areas include a first heating area, a second heating area and a third heating area. The second heating area is located between the first heating area and the third heating area. The furnace tube includes a constant temperature area. The constant temperature area is the second heating area. The length of the constant temperature area accounts for 1 / 3 to 1 / 2 of the total length of the furnace tube. An inlet assembly communicated with the interior of the furnace tube and used for introducing at least one of a growth gas, a growth liquid, an etching gas and an etching liquid into the furnace tube; An outlet communicated with the interior of the furnace tube; A furnace door assembly for connecting or isolating the furnace tube from the outside and transferring the substrate to be processed into or out of the furnace tube, wherein the furnace door assembly is located at at least one end of the furnace tube; The inlet assembly includes: a first inlet connected to the interior of the furnace tube and used to introduce growth gas or growth liquid into the furnace tube; a second inlet connected to the interior of the furnace tube and used to introduce etching gas or etching liquid into the furnace tube; A supply source for providing at least one of a growth gas, a growth liquid, an etching gas, and an etching liquid; a first pipeline, one end of which is connected to the supply source and the other end of which is connected to the inlet assembly; Power pump; a second pipeline, one end of which is connected to the power pump, and the other end of which is connected to the outlet; A safety seal and negative pressure exhaust system for preventing gas leakage, wherein the safety seal and negative pressure exhaust system are respectively placed on the periphery of the connection between the inlet component and the first pipeline and on the periphery of the connection between the outlet and the second pipeline, and the safety seal and negative pressure exhaust system comprises a box body and an exhaust duct, wherein the box body is respectively placed on the periphery of the connection between the inlet and the first pipeline and on the periphery of the connection between the outlet and the second pipeline, and the exhaust duct is connected to the interior of the box body.

2. The dual-function reactor according to claim 1, characterized in that: The inlet assembly comprises: a first inlet communicating with the interior of the furnace tube and used for introducing growth gas into the furnace tube; a second inlet communicating with the interior of the furnace tube and used for introducing a growth liquid into the furnace tube; A third inlet communicated with the interior of the furnace tube and used for introducing etching gas into the furnace tube; A fourth inlet is communicated with the interior of the furnace tube and is used for introducing etching liquid into the furnace tube.

3. The dual-function reactor according to claim 1, characterized in that: The furnace tube is a horizontal tube furnace or a vertical tube furnace.

4. The dual-function reactor according to claim 1, characterized in that: The furnace door assembly comprises: A loading and unloading conveying system, the loading and unloading conveying system comprising a slide rail and a carrying platform for placing the substrate to be processed, the slide rail being located outside one end of the furnace tube; the carrying platform being located on the slide rail and being able to slide on the slide rail; A furnace door is fixed to a side of the supporting platform away from the furnace tube, and a distance from the furnace door to a side of the supporting platform close to the furnace tube is less than a length of the furnace tube, so as to ensure that the furnace door isolates the furnace tube from the outside when the supporting platform is moved into the furnace tube.

5. The dual-function reactor according to claim 1, characterized in that: The furnace door assembly comprises: A furnace door, one side of which is movably connected to the furnace body, wherein when the furnace door is opened, the furnace tube is connected to the outside, and when the furnace door is closed, the furnace tube is isolated from the outside; A loading and unloading conveying system is used to convey the substrate to be processed into the furnace tube, and convey the substrate to be processed after processing out of the furnace tube. The loading and unloading conveying system is located on one side of the furnace door.

6. The dual-function reactor according to claim 5, characterized in that: The loading and unloading conveying system includes at least one of a rectangular coordinate manipulator, a spherical coordinate manipulator, an articulated manipulator or a cylindrical coordinate manipulator.

7. The dual-function reactor according to any one of claims 4 to 6, characterized in that: The furnace door assembly also includes: A flange is located between the furnace door and the furnace body and is sleeved on the outer periphery of one end of the furnace tube close to the furnace door; A sealing ring is located between the flange and the furnace door.

8. The dual-function reactor according to claim 1, characterized in that: The dual-function reactor also includes: Treatment plants for treating waste gases or liquid waste; The third pipeline has one end connected to the power pump and the other end connected to the processing device.

9. The dual-function reactor according to claim 1 or 8, characterized in that: The dual-function reaction furnace further comprises a filtering device for filtering the gas or liquid exhausted from the furnace tube, and the filtering device is located on the second pipeline.

10. The dual-function reactor according to claim 1, characterized in that: The dual-function reactor also includes a cooling system, which includes: A cooling pipeline is located at the periphery of the heating device and is spaced apart from the heating device; A refrigerant source is connected to the cooling pipeline.

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