A deposition device and an atomic layer deposition apparatus

Abstract

A deposition device includes a supply unit with a hollow shell as a reaction chamber and connected to the reaction chamber, wherein the supply unit includes a reactant transmission module, and the reactant transmission module is detachably connected to the reaction unit. An atomic layer deposition device includes a frame and the above-mentioned deposition device, which can be used to prepare a powder surface coating layer. The present invention can effectively solve the problem of cross contamination when depositing different thin film materials and incomplete ALD deposition particle coating layer.

Description

Technical Field

[0001] The present invention relates to the field of thin film deposition, and in particular to a deposition device and an atomic layer deposition equipment. Background Art

[0002] Particle surface functionalization is an important part of material surface engineering technology, and it is of great significance to improve the original performance of particles. For example, nanosilver particles have good thermal conductivity, electrical conductivity and surface plasmon resonance effect. Wrapping nanosilver particles in carbon nanotubes (CNTs@Ag) can enhance the photoelectric performance of the matrix carbon nanotubes; coating a protective layer on the surface of catalyst particles can effectively prevent the metal catalyst from agglomerating during the sintering process, which causes the catalytic performance to decrease or even lose its catalytic performance.

[0003] Common methods for functionalizing particle surfaces include sol-gel and chemical vapor deposition (CVD). Sol-gel can be used to prepare dense, pinhole-free coatings, but it is difficult to accurately control the thickness of the coating using this method, and the particles treated by the sol-gel method need to be separated and dried before use, which is a cumbersome process. The coating deposited on the surface of the particles using chemical vapor deposition is often porous, uneven, and distributed in islands. In order to overcome these defects, a coating that exceeds the required thickness needs to be deposited. In practical applications, if the coating is too thin, it will not work, and if it is too thick, it may reduce the performance of the base material. Therefore, the thickness of the coating needs to be precisely controlled. Based on the self-limiting characteristics, atomic layer deposition (ALD) can accurately control the thickness of the film by controlling the number of reaction cycles; based on saturated chemical adsorption, it can ensure the generation of large-area uniform and dense films. Atomic layer deposition makes up for the shortcomings of sol-gel and chemical vapor deposition, and is currently the mainstream technology for preparing thin film materials.

[0004] When ALD deposition is performed on particles, since the particle samples are generally stacked on top of each other in the reaction vessel, the lower particles and the areas where the particles are in contact with each other cannot form effective encapsulation. The use of a fluidized bed or a rotating reaction chamber can achieve complete encapsulation of the particles, but there is still the problem of cross-contamination between the deposited materials.

[0005] Therefore, it is necessary to propose a method to solve the incomplete coating and cross contamination of ALD deposited particles. Summary of the invention

[0006] The purpose of the present invention is to overcome the defects of the prior art and provide a deposition device and an atomic layer deposition device. The atomic layer deposition device can well diffuse the reaction gas evenly onto the sample, and can effectively solve the problem of incomplete ALD deposition particle coating layer in the prior art; the atomic layer deposition device can also replace the corresponding deposition device according to the type of deposited material, avoiding the problem of cross contamination that may occur when depositing different thin film materials.

[0007] The present invention provides a deposition device, which comprises:

[0008] The reaction unit comprises a shell having a hollow structure, wherein the hollow structure forms a reaction chamber for depositing an object to be deposited;

[0009] A supply unit is communicated with the reaction chamber, and the supply unit includes a reactant transmission module;

[0010] Wherein, the reactant transport module is detachably connected to the reaction unit.

[0011] Furthermore, the reactant transmission module is connected to the reaction unit via a fastener or a clamp.

[0012] Furthermore, the deposition device also includes a flow guiding unit, which is connected to the reaction chamber and the reactant transmission module respectively.

[0013] Furthermore, the supply unit also includes a deposition object introduction module that penetrates from the shell into the reaction chamber.

[0014] Furthermore, the deposition device further includes a vibration unit connected to the reaction unit and a shock absorbing unit connected to the vibration unit.

[0015] Furthermore, the number of the guide units is more than one.

[0016] Furthermore, the deposition device also includes a filtering unit arranged on the guide unit.

[0017] Furthermore, the flow guiding unit is a filter element.

[0018] The present invention also provides an atomic layer deposition device, which includes a frame and the deposition device as described above, wherein the deposition device is arranged on the frame.

[0019] Furthermore, the atomic layer deposition equipment is used to prepare the powder surface coating layer.

[0020] In summary, a deposition device includes a reactant transport module with a hollow shell as a reaction chamber and connected to the reaction chamber; wherein the reactant transport module and the reaction unit are detachably connected by a fastener or a clamp. When thin film deposition is performed, the fastener or the clamp ensures that there is no leakage between the reactant transport module and the reaction unit; when a thin film deposition is completed, the sample can be taken out by removing the fastener or the clamp. If different thin film materials are subsequently deposited, the deposition device can be replaced to avoid cross contamination between different materials.

[0021] An atomic layer deposition device can be used for the preparation of a powder surface coating layer, comprising a frame and the above-mentioned deposition device. Starting the vibrator can drive the particle sample placed in the reaction chamber, so that the reaction gas has good dispersion on the surface of the particle sample, which effectively avoids the problem of incomplete deposition caused by particle agglomeration or accumulation under static conditions; and the filter unit or filter element in the deposition device can prevent the particle sample from splashing out of the reaction chamber, causing contamination of the guide unit and / or the reactant transmission module.

[0022] Compared with the prior art, the deposition device and atomic layer deposition equipment provided by the present invention can effectively solve the problems of cross contamination and incomplete ALD deposition particle coating layer when depositing different thin film materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic diagram of a deposition device provided in accordance with an embodiment of the present invention.

[0024] Figure 2 A schematic diagram of an atomic layer deposition device provided by one embodiment of the present invention.

[0025] Figure 3 A schematic diagram of an atomic layer deposition device provided by one embodiment of the present invention.

[0026] Among them, 1. shell, 11. reaction chamber, 2. supply unit, 21. reactant transmission module, 3. fastener, 4. guide unit, 5. deposited body transmission module, 6. vibration unit, 7. shock absorbing unit, 8. filtering unit, 9. frame. DETAILED DESCRIPTION

[0027] The following will be combined with the accompanying drawings of the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, other embodiments obtained by technicians in this field without creative work are all within the scope of protection of the present invention.

[0028] Figure 1An embodiment of the present invention provides a deposition device, the deposition device comprising:

[0029] The reaction unit comprises a housing 1 having a hollow structure, wherein the hollow structure forms a reaction chamber 11 for depositing an object to be deposited;

[0030] A supply unit 2 is connected to the reaction chamber 11, and the supply unit 2 includes a reactant transmission module 21;

[0031] The reactant transport module 21 is detachably connected to the reaction unit.

[0032] The deposited body is the sample to be deposited, and the sample can be a sheet such as a silicon wafer, or a powder sample. From the placement of the sample, the sample can be placed at any position of the reaction chamber 11; but in general, the sample is placed at the bottom of the reaction chamber 11. The supply unit 2 is used to provide the deposition material required for the reaction to the reaction chamber 11. For example, aluminum oxide is deposited on the surface of the sample by atomic layer deposition, and trimethylaluminum and water are selected as the deposition materials. Then the supply unit 2 provides trimethylaluminum and water into the reaction chamber 11. In order to ensure that the deposition material can reach the reaction chamber 11 smoothly or with the lowest loss, a reactant transmission module 21 is divided in the supply unit 2. For the atomic layer deposition process, the reactant generally enters the reaction chamber 11 in a gaseous form and reacts on the sample. As for whether the reactant needs to be heated and how high the heating temperature needs to be, it depends on the vapor pressure of the reactant: if the saturated vapor pressure of the reactant is low, the reactant does not need to be heated; if the saturated vapor pressure of the reactant is high, the reactant needs to be heated. In addition, in the present embodiment, the reactant transport module 21 and the reaction unit are combined in a detachable connection mode: when the deposition process is in progress, the reactant transport module 21 and the reaction unit are well connected; after the deposition process is completed, the reactant transport module 21 and the reaction unit can be separated, which is convenient for taking out samples from the reaction chamber 11 on the one hand, and is conducive to the replacement of the reaction chamber 11 on the other hand. In addition to the reaction chamber 11 itself having problems and needing to be replaced, the reaction chamber 11 can also be replaced accordingly when depositing different materials: for example, when depositing aluminum oxide and titanium oxide, the same reaction chamber 11 can be used for deposition, or two different reaction chambers 11 can be used respectively, namely, an aluminum oxide reaction chamber 11 for depositing aluminum oxide and a titanium oxide reaction chamber 11 for depositing titanium oxide, which effectively solves the problem of cross contamination when depositing different materials. Using a detachable connection as a non-permanent connection can achieve the purpose of convenient and rapid installation and disassembly and reduce costs.

[0033] It is worth mentioning that the reaction unit may further include a heat preservation unit disposed around the reaction chamber 11 to ensure the required temperature in the reaction chamber 11. For thin film materials that can be deposited at room temperature, there is no need to provide a heat preservation unit.

[0034] In one embodiment, the reactant transport module 21 is connected to the reaction unit via a clamp 3 or a clamp. The pipe clamp fastener includes common threads, flanges, clamps 3 and clamps. Compared with threaded connections and flange connections, clamps 3 or clamps are more convenient and faster to operate.

[0035] In one embodiment, the deposition device further includes a flow guide unit 4, which is connected to the reaction chamber 11 and the reactant transmission module 21 respectively. The flow guide unit 4 is disposed between the reaction chamber 11 and the reactant transmission module 21 to change the flow direction of the reactants flowing through the reactant transmission module 21, which can effectively avoid the problems of reactants accumulating in the reactant transmission module 21, reactants repeatedly flushing the reactant transmission module 21, or reactants failing to efficiently and quickly reach the reaction chamber 11. The flow guide unit 4 can be detachably connected to the reaction chamber 11, or detachably connected to the reactant transmission module 21, or detachably connected to the reaction chamber 11 and the reactant transmission module 21 at the same time.

[0036] Preferably, at least a portion of the flow guide unit 4 is exposed to the reaction chamber 11 to improve the utilization rate of the reactants. The reason is that if the gas outlet of the flow guide unit 4 is attached to the bottom of the reaction chamber 11, the reactants diffuse radially at the bottom of the reaction chamber 11, i.e., below the sample, and relatively few reactants can directly contact the sample.

[0037] In one embodiment, the supply unit 2 further includes a deposited body introduction module 5 that penetrates from the shell 1 into the reaction chamber 11. The deposited body is a sample, and the deposited body introduction module 5 is used to transfer the sample from outside the reaction chamber 11 to inside the reaction chamber 11. The deposited body introduction module 5 can be arranged at any position on the shell 1. In this embodiment, the deposited body introduction module 5 also includes a locking member for sealingly connecting the deposited body introduction module 5 and the shell 1; for the convenience of taking and placing samples, preferably, the deposited body introduction module 5 is arranged at the top of the shell 1.

[0038] In one embodiment, the deposition device further includes a vibration unit 6 connected to the reaction unit and a shock absorbing unit 7 connected to the vibration unit 6. In this embodiment, the reaction unit serves as the vibration impact part of the vibration unit 6, and the vibration force and vibration frequency of the vibration unit 6 need to be sufficient to drive the sample in the reaction chamber 11 to move. During the deposition process, the sample reciprocates under the drive of the vibration unit 6, so that each area of ​​the sample surface has the opportunity to fully contact the reactant, and the reactant undergoes a deposition reaction on the sample surface. In addition, the present embodiment also includes a shock absorbing unit 7 connected to the vibration unit 6. The shock absorbing unit 7 is fitted on the outer periphery of the vibration unit 6 to prevent or reduce the phenomenon that other parts on the device collide and resonate with each other when the vibration amplitude of the vibration unit 6 is large. Rubber has a good shock absorbing effect, is widely available, and is inexpensive. It is an ideal shock absorbing material. In this embodiment, rubber is preferably used as the shock absorbing unit 7.

[0039] In one embodiment, the number of the flow guide unit 4 is more than one. When there is one flow guide unit 4, all reactants enter the reaction chamber 11 through the same flow guide unit 4. If the deposition reaction requires flushing gas to remove the unreacted residual reactants in the reaction chamber 11 or the byproducts generated during the deposition reaction, the flushing gas also needs to enter the reaction chamber 11 through the single flow guide unit 4; at the same time, the substances discharged from the reaction chamber 11 can also be discharged from the reaction chamber 11 through the flow guide unit 4.

[0040] In fact, the flow guide unit 4 can be set according to the two functions of the material entering the reaction chamber 11 and the material exiting the reaction chamber 11, that is, two flow guide units 4 for introduction and exit can be set respectively. In this case, the reactant or flushing gas flows into the reaction chamber 11 through the introduction flow guide unit 4, and the material to be discharged is discharged to the outside of the reaction chamber 11 through the exit flow guide unit 4.

[0041] In addition, the flow guide unit 4 used for introduction in the flow guide unit 4 can be set according to the number of types of introduced gases, and a corresponding flow guide unit 4 is set for each type or each substance. For example, the deposition materials for preparing aluminum oxide mentioned above include trimethylaluminum and water, and flow guide units 4 are set corresponding to trimethylaluminum and water respectively; since inert gas such as nitrogen and argon are also needed as flushing gas during the deposition of aluminum oxide, an independent flushing gas flow guide unit 4 can be set at this time. Only one flow guide unit 4 for export is required.

[0042] If the deposited material is easily oxidized in the air environment, a valve needs to be added to block the air. Whether a valve needs to be set on the flow guide unit 4 mainly depends on the sensitivity of the deposited material on the sample to air.

[0043] In one embodiment, the deposition device further includes a filter unit 8 disposed on the flow guide unit 4. The filter unit 8 is used to intercept samples discharged with the discharged material, especially particle samples. In principle, it is sufficient to set the filter unit 8 on the derived flow guide unit 4, but considering that even the introduced flow guide unit 4 will come into contact with the sample, in order to ensure that the sample does not contaminate the flow guide unit 4 and is not taken out of the reaction chamber 11 or enter the flow guide unit 4 to cause blockage, one flow guide unit 4 is correspondingly provided with one filter unit 8 or multiple flow guide units 4 can share one filter unit 8. The filter unit 8 is arranged on the flow guide unit 4 in parallel or in series with the flow guide unit 4.

[0044] The filter element can be an axial filter element or a flat filter element. If it is an axial filter element, the filter element and the flow guide unit 4 are preferably seamlessly connected in series; if it is a flat filter element, the flat filter element can be placed at any position on the flow guide unit 4. When the flow guide unit 4 is a pipe, the flat filter element can be placed at both ends of the pipe and at a position in the middle of the pipe.

[0045] In one embodiment, the flow guide unit 4 is a filter element. The filter element preferably has a filter core with nanometer-level pores. For powder or particle samples, the filter core is exposed to the reaction chamber 11 at a certain height, so that the reactants are evenly diffused in a larger range or at different heights and fully contact with the particle sample, so that the particle sample has excellent coating uniformity and integrity.

[0046] Figure 2 This is an embodiment of the present invention. This embodiment provides an atomic layer deposition device. The atomic layer deposition device includes a frame 9 and a deposition device as described above. The deposition device is arranged on the frame 9. Figure 3 This is another embodiment of an atomic layer deposition device.

[0047] In one embodiment, an atomic layer deposition device is used to prepare a coating layer on the surface of a powder.

[0048] In summary, a deposition device includes a reactant transport module with a hollow shell as a reaction chamber and connected to the reaction chamber; wherein the reactant transport module and the reaction unit are detachably connected by a fastener or a clamp. When thin film deposition is performed, the fastener or the clamp ensures that there is no leakage between the reactant transport module and the reaction unit; when a thin film deposition is completed, the sample can be taken out by removing the fastener or the clamp. If different thin film materials are subsequently deposited, the deposition device can be replaced to avoid cross contamination between different materials.

[0049] An atomic layer deposition device includes a frame and the above-mentioned deposition device, which can be used for preparing a coating layer on the surface of a powder. Starting a vibrator can drive a particle sample placed in a reaction chamber, so that the reaction gas has good dispersion on the surface of the particle sample, which effectively avoids the problem of incomplete deposition caused by particle agglomeration or accumulation in a static state; and the filter unit or filter element in the deposition device can prevent the particle sample from splashing out of the reaction chamber, causing contamination of the guide unit and / or the reactant transmission module.

[0050] Compared with the prior art, the deposition device and atomic layer deposition equipment provided by the present invention can effectively solve the problems of cross contamination and incomplete ALD deposition particle coating layer when depositing different thin film materials.

[0051] The above contents are merely examples and explanations of the present invention. Those skilled in the art may make various modifications or additions to the specific embodiments described or replace them with similar methods. As long as they do not deviate from the invention or exceed the scope defined by the claims, they shall all fall within the protection scope of the present invention.

Claims

1. A deposition device, characterized in that: include: The reaction unit comprises a shell having a hollow structure, wherein the hollow structure forms a reaction chamber for depositing an object to be deposited; A supply unit, connected to the reaction chamber, comprising a reactant transmission module; a flow guiding unit, connected to the reaction chamber and the reactant transport module respectively; Wherein, the reactant transport module is detachably connected to the reaction unit; The flow guiding unit is detachably connected to the reaction chamber, or the flow guiding unit is detachably connected to the reactant transport module; The flow guiding unit is a filter element; at least a portion of the filter element is exposed in the reaction chamber.

2. The deposition device according to claim 1, characterized in that: The reactant transmission module is connected to the reaction unit via a fastener or a clamp.

3. The deposition device according to claim 1, characterized in that: The supply unit further includes a deposition object introduction module which penetrates from the shell into the reaction chamber.

4. The deposition device according to claim 1, characterized in that: It also includes a vibration unit connected to the reaction unit and a shock absorbing unit connected to the vibration unit.

5. The deposition device according to claim 1, characterized in that: The number of the guide units is more than one.

6. The deposition device according to claim 1, characterized in that: It also includes a filtering unit arranged on the flow guide unit.

7. The deposition device according to claim 1, characterized in that: The flow guiding unit is a filter element.

8. An atomic layer deposition device, characterized in that: The method comprises a frame and a deposition device as claimed in any one of claims 1 to 7, wherein the deposition device is arranged on the frame.

9. The atomic layer deposition apparatus according to claim 8, characterized in that: Used in the preparation of powder surface coating.

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