Optical connection module and preparation method thereof

Abstract

The present invention relates to the field of semiconductor device technology, and specifically to an optical connection module and a preparation method thereof, which aims to solve the problem that light transmission in the prior art needs to be reflected twice, resulting in energy loss, and the glass prism used is relatively large, affecting the volume of the chip after integration. The technical key points are that it includes a transmission chip; a receiving chip, which is arranged parallel to the transmission chip; and a reflector, which is located directly above the central axis between the transmission chip and the receiving chip; wherein the transmission chip includes a transmitting part inclined toward the reflector, and the receiving chip includes a receiving part inclined toward the reflector, and the light emitted by the transmitting part is received by the receiving part after being reflected by the reflector once. The light transmission in the present invention can be realized with only one reflection, which effectively reduces energy loss, while reducing the volume required for the chip, greatly improving practicality, and the manufacturing process steps are simple, which can effectively reduce production costs.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to an optical connection module and a preparation method thereof. Background Art

[0002] The market demand brought by mobile Internet, cloud computing, Internet of Things, next-generation data centers, etc., the deployment of cloud computing has accelerated the demand for network bandwidth. The massive data that is constantly interacting requires more powerful data centers and higher network bandwidth, and the scale of the data center market has been growing at a rate of 40%. At present, global equipment suppliers and manufacturers have invested a lot of resources to develop optical communication network technologies and products with transmission rates of 40Gb / s, 100Gb / s and even 400Gb / s. As one of the key technologies of ultra-high-speed and ultra-large-capacity optical networks, 40Gb / s and 100Gb / s communication optoelectronic chips and optoelectronic devices are developing in the direction of integration, high bandwidth, small size, low power consumption and low cost, and have become a hot spot for development and investment at home and abroad.

[0003] Therefore, in practical applications, Figure 1 As shown, a surface-emitting laser is usually used to transmit the signal to the detector through a glass prism after two reflections. However, the above solution still has the following problems: 1. The light needs to be reflected twice, resulting in energy loss 2. The glass prism with two reflections requires complex manufacturing processes, which increases the cost 3. The glass prism with two reflections is large in size, which affects the volume of the chip after integration. Summary of the invention

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the defects in the prior art that light transmission requires two reflections, resulting in energy loss, and the glass prism used is large in size, affecting the volume of the chip after integration, thereby providing an optical connection module and a preparation method thereof.

[0005] The above technical objectives of the present invention are achieved through the following technical solutions:

[0006] An optical connection module, comprising:

[0007] Transmission chip;

[0008] A receiving chip is arranged in parallel and spaced apart from the transmitting chip;

[0009] A reflector, located directly above the central axis between the transmission chip and the receiving chip;

[0010] The transmission chip includes a transmitting part tilted toward the reflector, and the receiving chip includes a receiving part tilted toward the reflector. The light emitted by the transmitting part is reflected once by the reflector and then received by the receiving part.

[0011] Optionally, the transmission chip further includes a first substrate and a first covering layer covering the first substrate, and the transmitting portion is located at an end of the first covering layer close to the receiving chip.

[0012] Optionally, the first covering layer includes a first corrodible layer and a first epitaxial layer covering the first corrodible layer, at least one side end of the first epitaxial layer extends out of the first corrodible layer, and the end of the first epitaxial layer extending out of one end of the first corrodible layer is tilted toward the reflector to form the emitting portion.

[0013] Optionally, the receiving chip further includes a second substrate and a second covering layer covering the second substrate, and the receiving part is located at an end of the second covering layer close to the transmitting chip.

[0014] Optionally, the second covering layer includes a second corrodible layer and a second epitaxial layer covering the second corrodible layer, at least one side end of the second epitaxial layer extends out of the second corrodible layer, and the end of the second epitaxial layer extending out of one end of the second corrodible layer is tilted toward the reflector to form the receiving portion.

[0015] Optionally, the first corrodible layer and the second corrodible layer include AlAs / GaAs or AlGaAs / GaAs or InGaAs / InP.

[0016] Optionally, the thickness of the first corrodible layer and the second corrodible layer are both 20-25 nm.

[0017] Another object of the present invention is a method for manufacturing the optical connection module, comprising the following steps:

[0018] S1. Manufacturing a transmission chip: selecting a first substrate, then growing a first corrodible layer on the first substrate, and growing a first epitaxial layer on the first corrodible layer, then forming an emitting portion at one end of the first epitaxial layer by wet etching, and finally corroding the first corrodible layer to corrode the first corrodible layer at the bottom of the emitting portion, so that the emitting portion is arranged tilted;

[0019] S2, manufacturing a receiving chip: selecting a second substrate, then growing a second corrodible layer on the second substrate, and growing a second epitaxial layer on the second corrodible layer, then forming a receiving portion at one end of the second epitaxial layer by wet etching, and finally corroding the second corrodible layer to corrode the second corrodible layer at the bottom of the receiving portion, so that the receiving portion is arranged obliquely;

[0020] S3, arranging the transmission chip and the receiving chip in parallel and at intervals, so that the transmitting part and the receiving part are arranged opposite to each other;

[0021] S4. Fix the reflector to the transmission chip and the receiving chip in a detachable manner so that it is located directly above the central axis between the transmission chip and the receiving chip, so that the light emitted by the transmitting part is received by the receiving part after being reflected once by the reflector.

[0022] Optionally, in the steps S1 and S2, the thickness of the first corrodible layer and the second corrodible layer are both 20-25 nm.

[0023] Optionally, in the steps S1 and S2, the corrosion time of the first corrodible layer and the second corrodible layer is 2-5 minutes.

[0024] The present invention utilizes selective wet etching to produce inclined transmitting and receiving parts. Through a flat reflector, light transmission can be achieved with only one reflection, which effectively reduces energy loss and reduces the volume required for the chip, greatly improving practicality. The manufacturing process is simple and can effectively reduce production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 It is a structural schematic diagram of the prior art in the present invention;

[0027] Figure 2 It is a schematic structural diagram of an optical connection module in one embodiment of the present invention.

[0028] Description of reference numerals:

[0029] 1. Transmission chip; 11. Transmitter; 12. First substrate; 13. First covering layer; 131. First corrodible layer; 132. First epitaxial layer; 2. Receiving chip; 21. Receiving part; 22. Second substrate; 23. Second covering layer; 231. Second corrodible layer; 232. Second epitaxial layer; 3. Reflector. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0031] Embodiment 1:

[0032] An optical connection module, such as Figure 2 As shown, it includes a transmission chip 1, a receiving chip 2 and a reflector 3, wherein the receiving chip 2 is arranged parallel to the transmission chip 1 and spaced apart, and the reflector 3 is located directly above the central axis between the transmission chip 1 and the receiving chip 2; specifically, the transmission chip 1 includes a transmitting part 11 tilted toward the reflector 3, and the receiving chip 2 includes a receiving part 21 tilted toward the reflector 3, so that the light emitted by the transmitting part 11 can be received by the receiving part 21 after being reflected once by the reflector 3. The light transmission in the present invention can be realized with only one reflection, which effectively reduces energy loss, while reducing the volume required for the chip, making it easier to integrate and greatly improving practicality.

[0033] like Figure 2 As shown, the transmission chip 1 further includes a first substrate 12 and a first covering layer 13 covering the first substrate 12, and the transmitting portion 11 is located at the end of the first covering layer 13 close to the receiving chip 2. The first covering layer 13 includes a first corrodible layer 131 and a first epitaxial layer 132 covering the first corrodible layer 131, at least one side end of the first epitaxial layer 132 extends out of the first corrodible layer 131, and the end of the first epitaxial layer 132 extending out of one end of the first corrodible layer 131 is tilted toward the reflector 3 to form the transmitting portion 11.

[0034] like Figure 2 As shown, the receiving chip 2 further includes a second substrate 22 and a second covering layer 23 covering the second substrate 22, and the receiving portion 21 is located at the end of the second covering layer 23 close to the transmitting chip 1. The second covering layer 23 includes a second corrodible layer 231 and a second epitaxial layer 232 covering the second corrodible layer 231, at least one side end of the second epitaxial layer 232 extends out of the second corrodible layer 231, and the end of the second epitaxial layer 232 extending out of one end of the second corrodible layer 231 is tilted toward the reflector 3 to form the receiving portion 21.

[0035] like Figure 2 As shown, the first corrodible layer 131 and the second corrodible layer 231 include AlAs / GaAs or AlGaAs / GaAs or InGaAs / InP, therefore, the first corrodible layer 131 and the second corrodible layer 231 are corroded by wet etching to form the transmitting part 11 and the receiving part 21, and both are tilted toward the reflector 3. The overall manufacturing process steps of the present invention are simple, and the production cost can be effectively reduced.

[0036] like Figure 2 As shown, the thickness of the first corrodible layer 131 and the second corrodible layer 231 are both 20-25 nm, so that the inclination angle of the transmitting part 11 and the receiving part 21 can be further adjusted by adjusting the thickness and corrosion time of the first corrodible layer 131 and the second corrodible layer 231 to ensure that the light emitted by the transmitting part 11 can be received by the receiving part 21 after being reflected once by the reflector 3.

[0037] Embodiment 2:

[0038] A method for preparing an optical connection module, such as Figure 2 As shown, the following steps are included:

[0039] S1, manufacturing the transmission chip 1: selecting a first substrate 12, then growing a first corrodible layer 131 on the first substrate 12, and growing a first epitaxial layer 132 on the first corrodible layer 131, then forming an emitting portion 11 at one end of the first epitaxial layer 132 by wet etching, and finally corroding the first corrodible layer 131 to corrode the first corrodible layer 131 at the bottom of the emitting portion 11. In this embodiment of the present invention, the thickness of the first corrodible layer 131 is 20 nm, and the etching time is 2-3 minutes, so that the emitting portion 11 is tilted and the tilt angle is 45°;

[0040] S2, manufacturing receiving chip 2: selecting a second substrate 22, then growing a second corrodible layer 231 on the second substrate 22, and growing a second epitaxial layer 232 on the second corrodible layer 2321, then forming a receiving portion 21 at one end of the second epitaxial layer 232 by wet etching, and finally corroding the second corrodible layer 231 to corrode the second corrodible layer 231 at the bottom of the receiving portion 21. In this embodiment of the present invention, the thickness of the first corrodible layer 131 is 20 nm, and the etching time is 2-3 minutes, so that the receiving portion 21 is tilted and the tilt angle is 45°;

[0041] S3, arranging the transmitting chip 1 and the receiving chip 2 in parallel and at intervals, so that the transmitting part 11 and the receiving part 21 are arranged opposite to each other;

[0042] S4. Fix the reflector 3 to the transmission chip 1 and the receiving chip 2 in a detachable manner so that it is located directly above the central axis between the transmission chip 1 and the receiving chip 2, so that the light emitted by the transmitting part 11 is reflected once by the reflector 3 and then received by the receiving part 21, while further ensuring that the size of the optical chip is reduced.

[0043] Embodiment 3:

[0044] A method for preparing an optical connection module, such as Figure 2 As shown, the following steps are included:

[0045] S1, manufacturing the transmission chip 1: selecting a first substrate 12, then growing a first corrodible layer 131 on the first substrate 12, and growing a first epitaxial layer 132 on the first corrodible layer 131, then forming an emitting portion 11 at one end of the first epitaxial layer 132 by wet etching, and finally corroding the first corrodible layer 131 to corrode the first corrodible layer 131 at the bottom of the emitting portion 11. In this embodiment of the present invention, the thickness of the first corrodible layer 131 is 25 nm, and the etching time is 3-5 minutes, so that the emitting portion 11 is tilted, and the tilt angle is 40°;

[0046] S2, manufacturing receiving chip 2: selecting a second substrate 22, then growing a second corrodible layer 231 on the second substrate 22, and growing a second epitaxial layer 232 on the second corrodible layer 2321, then forming a receiving portion 21 at one end of the second epitaxial layer 232 by wet etching, and finally corroding the second corrodible layer 231 to corrode the second corrodible layer 231 at the bottom of the receiving portion 21. In this embodiment of the present invention, the thickness of the first corrodible layer 131 is 25 nm, and the etching time is 4-5 minutes, so that the receiving portion 21 is tilted, and the tilt angle is 40°;

[0047] S3, arranging the transmitting chip 1 and the receiving chip 2 in parallel and at intervals, so that the transmitting part 11 and the receiving part 21 are arranged opposite to each other;

[0048] S4. Fix the reflector 3 to the transmission chip 1 and the receiving chip 2 in a detachable manner so that it is located directly above the central axis between the transmission chip 1 and the receiving chip 2, so that the light emitted by the transmitting part 11 is reflected once by the reflector 3 and then received by the receiving part 21, while further ensuring that the size of the optical chip is reduced.

[0049] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. An optical connection module, characterized in that: include: Transmission chip (1); A receiving chip (2) is arranged in parallel and spaced apart from the transmitting chip (1); A reflector (3) is located directly above the central axis between the transmission chip (1) and the receiving chip (2); The transmission chip (1) comprises a transmitting part (11) arranged obliquely toward the reflector (3), the receiving chip (2) comprises a receiving part (21) arranged obliquely toward the reflector (3), and the light emitted by the transmitting part (11) is received by the receiving part (21) after being reflected once by the reflector (3); the inclination angle of the receiving part (21) is 40° or 45°; The transmission chip (1) further comprises a first substrate (12) and a first covering layer (13) covering the first substrate (12), and the transmitting portion (11) is located at an end of the first covering layer (13) close to the receiving chip (2); The first covering layer (13) comprises a first corrodible layer (131) and a first epitaxial layer (132) covering the first corrodible layer (131), at least one end of the first epitaxial layer (132) extending out of the first corrodible layer (131), and an end of the first epitaxial layer (132) extending out of one end of the first corrodible layer (131) is arranged tilted toward the reflector (3) to form the emitting portion (11); The receiving chip (2) further comprises a second substrate (22) and a second covering layer (23) covering the second substrate (22), and the receiving portion (21) is located at an end of the second covering layer (23) close to the transmitting chip (1); The second covering layer (23) comprises a second corrodible layer (231) and a second epitaxial layer (232) covering the second corrodible layer (231); at least one end of the second epitaxial layer (232) extends out of the second corrodible layer (231); and an end of the second epitaxial layer (232) extending out of one end of the second corrodible layer (231) is tilted toward the reflector (3) to form the receiving portion (21).

2. An optical connection module according to claim 1, characterized in that: The first corrodible layer (131) and the second corrodible layer (231) include AlAs / GaAs or AlGaAs / GaAs or InGaAs / InP.

3. An optical connection module according to claim 2, characterized in that: The thickness of the first corrodible layer (131) and the second corrodible layer (231) are both 20-25 nm.

4. A method for preparing an optical connection module, characterized in that: The optical connection module according to claim 1 comprises the following steps: S1. Manufacturing a transmission chip (1): selecting a first substrate (12), then growing a first corrodible layer (131) on the first substrate (12), and growing a first epitaxial layer (132) on the first corrodible layer (131), then forming an emitting portion (11) at one end of the first epitaxial layer (132) by wet etching, and finally corroding the first corrodible layer (131) to corrode the first corrodible layer (131) at the bottom of the emitting portion (11), so that the emitting portion (11) is arranged obliquely; S2, manufacturing a receiving chip (2): selecting a second substrate (22), then growing a second corrodible layer (231) on the second substrate (22), and growing a second epitaxial layer (232) on the second corrodible layer (231), then forming a receiving portion (21) at one end of the second epitaxial layer (232) by wet etching, and finally corroding the second corrodible layer (231) to corrode the second corrodible layer (231) at the bottom of the receiving portion (21), so that the receiving portion (21) is arranged obliquely; S3, arranging the transmission chip (1) and the receiving chip (2) in parallel and at intervals, so that the transmitting part (11) and the receiving part (21) are arranged opposite to each other; S4. The reflector (3) is fixed to the transmission chip (1) and the receiving chip (2) in a removable manner so that the reflector (3) is located directly above the central axis between the transmission chip (1) and the receiving chip (2), so that the light emitted by the transmitting part (11) is reflected once by the reflector (3) and then received by the receiving part (21).

5. The method for preparing an optical connection module according to claim 4, characterized in that: In the steps S1 and S2, the thickness of the first corrodible layer (131) and the second corrodible layer (231) are both 20-25 nm.

6. The method for preparing an optical connection module according to claim 5, characterized in that: In the steps S1 and S2, the corrosion time of the first corrodible layer (131) and the second corrodible layer (231) is 2-5 minutes.

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