New dielectric filter coupling structure
By designing negative coupling holes and boss structures in the dielectric filter and combining the conductive layer, capacitive coupling and remote parasitic passband frequency control are achieved, which solves the problems of complex structure and poor performance in existing dielectric filters, and simplifies the Process and performance are improved.
Patent Information
- Application Number
- CN201911039853.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2019-10-29
- Publication Date
- 2024-12-27
- Estimated Expiration
- 2039-10-29
AI Technical Summary
The performance indicators of existing metal coaxial cavity filters are deteriorated when reducing volume, and the capacitive coupling structure in solid dielectric filters is complex and the process is difficult, which can easily lead to the problem of remote parasitic passband frequency.
Design a new type of dielectric filter coupling structure, including the dielectric filter body, the first blind hole and the second blind hole, form two dielectric resonators, and realize capacitive coupling with the boss structure through the negative coupling hole, and control it by using conductive layer. Coupling strength, adjust the boss diameter and height to control the negative coupling strength.
Capacitive coupling is achieved while controlling the remote parasitic passband frequency, avoiding harmonics generated at the low end of the passband, simplifying process difficulty and improving the performance of the dielectric filter.
Smart Images
Figure CN110690541B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a novel dielectric filter coupling structure, belonging to the technical field of communication. Background Art
[0002] With the development of wireless communication technology, wireless communication base stations are distributed more and more densely, and the volume requirements of base stations are getting smaller and smaller. Among them, the volume of the RF front-end filter module in the base station accounts for a relatively large proportion. Therefore, the volume requirements of the filter are also getting smaller and smaller. However, when reducing the volume of the metal coaxial cavity filter, it is found that: the smaller the volume of the filter, the greater the surface current, the greater the loss, and the lower the power bearing capacity, that is, the smaller the power capacity. In other words, as the volume of the metal coaxial cavity filter decreases, its performance indicators deteriorate. At present, there is a miniaturized filter, namely the solid dielectric filter, which is widely used, but the structure of realizing capacitive coupling (or negative coupling) in the solid dielectric filter is relatively complex, the process is difficult to realize, and it is easy to cause parasitic passbands at frequencies close to the passband. Therefore, how to provide a dielectric filter with a simple structure and low process difficulty has become a research direction for technicians in this field. Summary of the invention
[0003] The object of the present invention is to provide a novel dielectric filter coupling structure, which can realize the control of the far-end parasitic passband frequency while realizing capacitive coupling.
[0004] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is: a novel dielectric filter coupling structure, comprising a dielectric filter body, a first blind hole and a second blind hole, wherein the first blind hole and the second blind hole are arranged on the same side of the dielectric filter body, the first blind hole and the second blind hole and the dielectric on the dielectric filter body form two dielectric resonators, a negative coupling hole is arranged between the two dielectric resonators, the openings of the negative coupling hole and the first debugging hole and the second debugging hole are located on the same surface of the dielectric filter body, one end of the negative coupling hole passes through the dielectric filter body, and the other end is a closed end, a boss is arranged in the negative coupling hole, the boss and the dielectric filter body are an integrated structure, and the inner wall of the negative coupling hole and the outer wall of the boss are provided with a continuous conductive layer.
[0005] The further improved scheme in the above technical scheme is as follows:
[0006] 1. In the above scheme, the negative coupling hole and the boss are coaxial structures.
[0007] 2. In the above solution, a conductive layer is provided on the surface of the dielectric filter body and is connected to the conductive layer on the inner wall of the negative coupling hole.
[0008] 3. In the above solution, the inner walls of the first blind hole and the second blind hole are provided with a conductive layer, which is connected to the conductive layer on the inner wall of the negative coupling hole.
[0009] 4. In the above solution, the depth of the negative coupling hole is 1.1 to 1.2 times the depth of the first blind hole.
[0010] 5. In the above solution, the inner diameter of the negative coupling hole is larger than the inner diameters of the first blind hole and the second blind hole.
[0011] 6. In the above solution, the diameter of the boss is approximately 1 / 3 to 1 / 2 of the negative coupling hole.
[0012] Due to the application of the above technical solution, the present invention has the following advantages compared with the prior art:
[0013] 1. The dielectric filter coupling structure of the present invention realizes capacitive coupling while controlling the far-end parasitic passband frequency, thereby avoiding the generation of harmonics at the low end of the passband.
[0014] 2. The dielectric filter coupling structure of the present invention has a negative coupling hole between two dielectric resonators, the openings of the negative coupling hole and the first debugging hole and the second debugging hole are located on the same surface of the dielectric filter body, one end of the negative coupling hole penetrates the dielectric filter body, and the other end is a closed end, a boss is provided in the negative coupling hole, the boss and the dielectric filter body are an integral structure, the inner wall of the negative coupling hole and the outer wall of the boss are provided with a continuous conductive layer, and the negative coupling strength is controlled by adjusting the diameter and height of the boss. The boss diameter is about 1 / 3 to 1 / 2 of the negative coupling hole, which can be determined according to the process implementation and the required coupling. Similarly, the boss height is about 10% to 100% of the coupling hole depth. Generally speaking, the higher the internal boss height and the larger the diameter, the larger the loading capacitance that can be formed, and the stronger the local electric field strength, the smaller the negative coupling between the two dielectric resonators can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Attached Figure 1 It is a schematic diagram of the coupling structure of the dielectric filter of the present invention.
[0016] In the above figures: 1, dielectric filter body; 2, first blind hole; 3, second blind hole; 4, negative coupling hole; 5, boss. DETAILED DESCRIPTION
[0017] In the description of this patent, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention; the terms "first", "second", and "third" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance; in addition, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be a connection between the two elements. For those of ordinary skill in the art, the specific meanings of the above terms in this patent can be understood according to specific circumstances.
[0018] Embodiment 1: A novel dielectric filter coupling structure comprises a dielectric filter body 1, a first blind hole 2 and a second blind hole 3, wherein the first blind hole 2 and the second blind hole 3 are arranged on the same side of the dielectric filter body 1, the first blind hole 2 and the second blind hole 3 and the dielectric on the dielectric filter body 1 form two dielectric resonators, a negative coupling hole 4 is arranged between the two dielectric resonators, the openings of the negative coupling hole 4 and the first debugging hole 2 and the second debugging hole 3 are located on the same surface of the dielectric filter body 1, one end of the negative coupling hole 4 passes through the dielectric filter body 1, and the other end is a closed end, a boss 5 is arranged in the negative coupling hole 4, the boss 5 and the dielectric filter body 1 are an integral structure, and a continuous conductive layer is arranged on the inner wall of the negative coupling hole 4 and the outer wall of the boss 5.
[0019] The negative coupling hole 4 and the boss 5 are coaxial structures.
[0020] The surface of the dielectric filter body 1 is provided with a conductive layer, which is connected to the conductive layer on the inner wall of the negative coupling hole 4 .
[0021] The inner walls of the first blind hole 2 and the second blind hole 3 are provided with a conductive layer, which is connected to the conductive layer on the inner wall of the negative coupling hole 4 .
[0022] The depth of the negative coupling hole 4 is 1.1 times the depth of the first blind hole 2 .
[0023] Embodiment 2: A novel dielectric filter coupling structure comprises a dielectric filter body 1, a first blind hole 2 and a second blind hole 3, wherein the first blind hole 2 and the second blind hole 3 are arranged on the same side of the dielectric filter body 1, the first blind hole 2 and the second blind hole 3 and the dielectric on the dielectric filter body 1 form two dielectric resonators, a negative coupling hole 4 is arranged between the two dielectric resonators, the openings of the negative coupling hole 4 and the first debugging hole 2 and the second debugging hole 3 are located on the same surface of the dielectric filter body 1, one end of the negative coupling hole 4 passes through the dielectric filter body 1, and the other end is a closed end, a boss 5 is arranged in the negative coupling hole 4, the boss 5 and the dielectric filter body 1 are an integral structure, and a continuous conductive layer is arranged on the inner wall of the negative coupling hole 4 and the outer wall of the boss 5.
[0024] The surface of the dielectric filter body 1 is provided with a conductive layer, which is connected to the conductive layer on the inner wall of the negative coupling hole 4 .
[0025] The depth of the negative coupling hole 4 is 1.2 times the depth of the first blind hole 2 .
[0026] The inner diameter of the negative coupling hole 4 is larger than the inner diameters of the first blind hole 2 and the second blind hole 3 .
[0027] The diameter of the above-mentioned boss is approximately 1 / 3 to 1 / 2 of the negative coupling hole.
[0028] When the novel dielectric filter coupling structure is adopted, it realizes the control of the far-end parasitic passband frequency while realizing the capacitive coupling.
[0029] The above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with the technology to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.
Claims
1. A novel dielectric filter coupling structure, characterized in that: The invention comprises a dielectric filter body (1), a first blind hole (2) and a second blind hole (3), wherein the first blind hole (2) and the second blind hole (3) are arranged on the same side of the dielectric filter body (1), the first blind hole (2) and the second blind hole (3) form two dielectric resonators with the dielectric on the dielectric filter body (1), a negative coupling hole (4) is arranged between the two dielectric resonators, the openings of the negative coupling hole (4) and the first debugging hole (2) and the second debugging hole (3) are located on the same surface of the dielectric filter body (1), one end of the negative coupling hole (4) passes through the dielectric filter body (1), and the other end is a closed end, and the negative coupling hole (4) is provided between the two dielectric resonators. A boss (5) is arranged in the coupling hole (4), the boss (5) and the dielectric filter body (1) are an integral structure, the inner wall of the negative coupling hole (4) and the outer wall of the boss (5) are provided with a continuous conductive layer, the negative coupling hole (4) and the boss (5) are coaxial structures, the depth of the negative coupling hole (4) is 1.1 to 1.2 times the depth of the first blind hole (2), the inner diameter of the negative coupling hole (4) is larger than the inner diameters of the first blind hole (2) and the second blind hole (3), the diameter of the boss (5) is approximately 1 / 3 to 1 / 2 of the negative coupling hole (4), and the height of the boss (5) is 10% to 100% of the depth of the negative coupling hole (4).
2. The novel dielectric filter coupling structure according to claim 1 is characterized in that: The surface of the dielectric filter body (1) is provided with a conductive layer which is connected to the conductive layer on the inner wall of the negative coupling hole (4).
3. The novel dielectric filter coupling structure according to claim 1 is characterized in that: The inner walls of the first blind hole (2) and the second blind hole (3) are provided with a conductive layer, which is connected to the conductive layer on the inner wall of the negative coupling hole (4).