Substrate processing device and substrate processing method

Abstract

The present invention provides a substrate processing device and a substrate processing method capable of inhibiting a filling material from adhering to the back side of a substrate. The substrate processing device (100) processes a substrate W having an upper surface and a back side. The substrate processing device (100) comprises a substrate holding part (120), a filling material supply part (150), and a first cleaning liquid supply part (160). The substrate holding part (120) holds the central part of the back side of a substrate (W) and rotates the substrate (W). The filling material supply part (150) supplies the filling material to the upper surface of the substrate (W) held by the substrate holding part (120). The first cleaning liquid supply part (160) supplies the cleaning liquid to the back side of the substrate (W) held by the substrate holding part (120). The first cleaning liquid supply part (160) supplies the cleaning liquid toward the area on the back side of the substrate (W) held by the substrate holding part (120).

Description

Technical Field

[0001] The invention relates to a substrate processing device and a substrate processing method. Background Art

[0002] It is known that substrates used for electronic components such as semiconductor devices and liquid crystal display devices are processed by substrate processing devices. As a substrate processing, in the manufacturing process of electronic components, a process of repeatedly performing film formation and etching on the surface of the substrate to form a fine pattern is performed. Among them, in order to perform fine processing on the surface of the substrate well, the surface of the substrate needs to be kept clean. Therefore, typically, the surface of the substrate is cleaned using a rinse liquid. In this case, after the cleaning process is completed, the rinse liquid attached to the surface of the substrate needs to be removed to dry the substrate.

[0003] An important subject in the drying process is to dry the substrate without collapsing the pattern formed on the substrate surface. As a method for solving this problem, sublimation drying technology has attracted much attention (for example, patent document 1). Patent document 1 records: by supplying a developer to the photoresist film that has been subjected to the exposure process, the photoresist film applied on the surface of the substrate is dissolved and a pattern is formed, and then a rinse liquid is supplied to the surface of the substrate to remove the developer. At the end of the rinse process, a polymer soluble in the rinse liquid is supplied to the substrate under the condition that the rinse liquid covers the surface of the substrate, and then the polymer solution is dried. In patent document 1, the concave portion of the pattern (the gap between the convex portions formed by the photoresist film) is filled with a polymer, and then the polymer is removed by selective plasma ashing.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2007-19161

[0005] As described in Patent Document 1, the polymer formed on the upper surface of the substrate can be removed by plasma ashing. However, when the polymer is supplied to the substrate, the polymer sometimes adheres not only to the upper surface of the substrate but also to the back surface of the substrate. The polymer attached to the back surface of the substrate cannot be fully removed even by plasma ashing, which sometimes causes defocusing and other undesirable conditions in the exposure process. Summary of the invention

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of suppressing adhesion of a filling material to the back surface of a substrate.

[0007] According to one embodiment of the present invention, a substrate processing device is provided for processing a substrate having an upper surface and a back surface. The substrate processing device comprises: a substrate holding portion for holding the central portion of the back surface of the substrate and rotating the substrate; a filling material supply portion for supplying a filling material to the upper surface of the substrate held by the substrate holding portion; and a first cleaning liquid supply portion for supplying a cleaning liquid to the back surface of the substrate held by the substrate holding portion. The first cleaning liquid supply portion supplies the cleaning liquid toward the area of ​​the back surface of the substrate held by the substrate holding portion.

[0008] In the substrate processing apparatus of the present invention, the substrate holding portion is adsorbed onto a central portion of the rear surface of the substrate.

[0009] In the substrate processing apparatus of the present invention, the cleaning liquid supplied from the first cleaning liquid supply unit to the back surface of the substrate spreads on the back surface of the substrate and approaches a region of the back surface of the substrate held by the substrate holding unit.

[0010] In the substrate processing apparatus of the present invention, the first cleaning liquid supply unit includes at least one nozzle, and the at least one nozzle sprays the cleaning liquid.

[0011] In the substrate processing device of the present invention, the at least one nozzle is directed toward the substrate in such a manner that the component of the moving direction of the cleaning liquid before reaching the back side of the substrate is projected onto the back side of the substrate is parallel to the normal direction of the arrival point based on the center of the substrate.

[0012] In the substrate processing device of the present invention, the at least one nozzle includes a first nozzle and a second nozzle, and the distance from the center of the substrate to the location where the cleaning liquid is sprayed onto the substrate through the first nozzle is different from the distance from the center of the substrate to the location where the cleaning liquid is sprayed onto the substrate through the second nozzle.

[0013] In the substrate processing apparatus of the present invention, the cleaning liquid ejected from the first nozzle is different from the cleaning liquid ejected from the second nozzle.

[0014] In the substrate processing apparatus of the present invention, the substrate processing apparatus further includes a nozzle moving unit that moves the at least one nozzle in a horizontal direction.

[0015] In the substrate processing apparatus of the present invention, the substrate processing apparatus further includes a second cleaning liquid supply unit configured to supply a cleaning liquid for cleaning a side surface of the substrate.

[0016] In the substrate processing device of the present invention, the distance from the center of the substrate to the point where the cleaning liquid is supplied to the substrate by the second cleaning liquid supply unit is longer than the distance from the center of the substrate to the point where the cleaning liquid is supplied to the substrate by the first cleaning liquid supply unit.

[0017] In the substrate processing device of the present invention, the cleaning liquid includes at least one of isopropyl alcohol, propylene glycol monomethyl ether acetate, 1-ethoxy-2-propanol and acetone.

[0018] In the substrate processing apparatus of the present invention, the substrate processing apparatus further includes an inert gas supply unit that supplies an inert gas to the back surface of the substrate.

[0019] According to another embodiment of the present invention, a substrate processing method is provided, which processes a substrate having an upper surface and a back surface. The substrate processing method includes: a process of holding the central portion of the back surface of the substrate and rotating the substrate; a filling material supplying process of supplying a filling material to the upper surface of the substrate; and a cleaning liquid supplying process of supplying a cleaning liquid to the back surface of the substrate after the filling material supplying process. The cleaning liquid supplying process includes a process of supplying the cleaning liquid toward the area of ​​the back surface of the substrate where the substrate is held.

[0020] In the substrate processing method of the present invention, in the cleaning liquid supplying step, the cleaning liquid supplied to the back surface of the substrate spreads on the back surface of the substrate and approaches a region on the back surface of the substrate where the substrate is held.

[0021] In the substrate processing method of the present invention, in the cleaning liquid supply process, the component of the moving direction of the cleaning liquid just before reaching the back side of the substrate is projected onto the back side of the substrate and is parallel to the normal direction of the arrival point based on the center of the substrate.

[0022] In the substrate processing method of the present invention, the filling material supplying process includes: a process of spraying the filling material onto the upper surface of the substrate; a process of rotating the substrate at a first rotational speed after spraying the filling material; a process of rotating the substrate at a second rotational speed lower than the first rotational speed after rotating the substrate at the first rotational speed; and a process of rotating the substrate at a third rotational speed higher than the second rotational speed after rotating the substrate at the second rotational speed.

[0023] In the substrate processing method of the present invention, the cleaning liquid supply process includes: a process in which a first cleaning liquid supply unit supplies the cleaning liquid toward an area on the back side of the substrate where the substrate is held; a process in which a second cleaning liquid supply unit supplies a cleaning liquid for cleaning the side of the substrate; a process in which, while the first cleaning liquid supply unit supplies the cleaning liquid, the substrate is rotated at a fourth speed that is lower than the third speed; and a process in which, while the second cleaning liquid supply unit supplies the cleaning liquid, the substrate is rotated at a fifth speed that is higher than the fourth speed.

[0024] In the substrate processing method of the present invention, the substrate processing method further includes a step of supplying an inert gas to the back surface of the substrate from before the step of supplying the filling material starts to before the step of supplying the cleaning liquid ends.

[0025] In the substrate processing method of the present invention, in the step of supplying the inert gas, a flow rate of the inert gas in the step of supplying the filling material is lower than a flow rate of the inert gas in the step of supplying the cleaning liquid.

[0026] In the substrate processing method of the present invention, in the cleaning liquid supplying step, the cleaning liquid is supplied toward the region of the back surface of the substrate where the substrate is held, and then the cleaning liquid for cleaning the side surfaces of the substrate is supplied.

[0027] According to the present invention, it is possible to suppress the filling material from being attached to the back surface of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram showing an embodiment of a substrate processing apparatus according to the present invention.

[0029] Figure 2 This is a diagram showing a substrate with a filler attached to the back surface.

[0030] Figure 3A as well as Figure 3B It is a schematic diagram showing the position of a cleaning liquid supply unit relative to a substrate in the substrate processing apparatus according to the present embodiment.

[0031] Figure 4A to Figure 4D This is a schematic diagram showing a diffusion process of the cleaning liquid supplied from the cleaning liquid supply unit to the substrate in the substrate processing apparatus according to the present embodiment.

[0032] Figure 5 It is a schematic diagram showing the arrival point of the cleaning liquid supplied from the cleaning liquid supply part to the substrate in the substrate processing apparatus of the present embodiment.

[0033] Fig. 6A as well as Figure 6BIt is a schematic diagram showing an embodiment of a substrate processing apparatus according to the present invention.

[0034] Figure 7 It is a schematic diagram showing a substrate processing apparatus according to this embodiment.

[0035] Figure 8 It is a schematic diagram showing a substrate processing apparatus according to this embodiment.

[0036] Figures 9A to 9C It is a schematic diagram of a cleaning liquid supply unit in the substrate processing apparatus according to the present embodiment.

[0037] Fig. 10A as well as Fig. 10B It is a schematic diagram showing an embodiment of a substrate processing apparatus according to the present invention.

[0038] Fig.11 It is a schematic diagram of a heating processing unit in the substrate processing apparatus according to the present embodiment.

[0039] Fig.12 It is a block diagram of a substrate processing apparatus according to this embodiment.

[0040] Fig.13 This is a flowchart for explaining the substrate processing method according to the present embodiment.

[0041] Figures 14A to 14C It is a schematic diagram for explaining the substrate processing method according to the present embodiment.

[0042] Figures 15A to 15C It is a schematic diagram for explaining the substrate processing method according to the present embodiment.

[0043] Fig.16 This is a flowchart for explaining the substrate processing method according to the present embodiment.

[0044] Fig.17 This is a flowchart for explaining the substrate processing method according to the present embodiment.

[0045] Fig.18 It is a schematic diagram of a substrate processing apparatus according to this embodiment.

[0046] Fig.19 This is a flowchart for explaining the substrate processing method according to the present embodiment.

[0047] Fig. 20 This is a flowchart for explaining the substrate processing method according to the present embodiment.

[0048] Fig.21 It is a schematic diagram of a substrate processing apparatus according to this embodiment.

[0049] Figures 22A to 22DIt is a schematic diagram for explaining the substrate processing method according to the present embodiment.

[0050] Description of reference numerals:

[0051] 100 Substrate processing device

[0052] 150 Filling material supply unit

[0053] 160 Cleaning fluid supply unit

[0054] W substrate DETAILED DESCRIPTION

[0055] Hereinafter, the present embodiment will be described with reference to the accompanying drawings. In addition, in the accompanying drawings, the same reference numerals are given to the same or corresponding parts, and the description thereof will not be repeated.

[0056] Reference Figure 1 An embodiment of the substrate processing apparatus 100 will be described. Figure 1 It is a schematic diagram of a substrate processing apparatus 100 according to this embodiment.

[0057] The substrate processing apparatus 100 processes the substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of etching, surface processing, imparting characteristics, forming a processed film, removing at least a portion of a film, and cleaning.

[0058] The substrate W includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, and a substrate for a solar cell. For example, the substrate W is roughly disk-shaped. Here, the substrate processing apparatus 100 processes the substrates W one by one.

[0059] The substrate processing apparatus 100 includes a chamber 110, a substrate holding portion 120, a chemical liquid supply portion 130, a rinse liquid supply portion 135, an organic solvent supply portion 140, a filling material supply portion 150, and a first cleaning liquid supply portion 160. The chamber 110 accommodates a substrate W. The substrate holding portion 120 holds the substrate W. The chemical liquid supply portion 130 supplies chemical liquid to the substrate W. The rinse liquid supply portion 135 supplies rinse liquid to the substrate W. The organic solvent supply portion 140 supplies an organic solvent to the substrate W. The filling material supply portion 150 supplies a filling material to the substrate W. The first cleaning liquid supply portion 160 supplies a cleaning liquid to the substrate W.

[0060] The chamber 110 is substantially box-shaped with an internal space. The chamber 110 accommodates the substrate W. Here, the substrate processing apparatus 100 is a single-sheet type that processes the substrates W one by one, and the substrates W are accommodated in the chamber 110 one by one. The substrates W are accommodated in the chamber 110 and processed in the chamber 110. The chamber 110 accommodates at least a part of each of the substrate holding part 120, the chemical solution supply part 130, the rinse liquid supply part 135, the organic solvent supply part 140, the filling material supply part 150, and the first cleaning liquid supply part 160.

[0061] A port 112 for carrying in and out the substrate W is provided on a side wall of the chamber 110 . A gate 114 for opening and closing the port 112 is provided on the chamber 110 . The gate 114 is driven to open and close by a gate opening and closing unit 116 .

[0062] The substrate holding part 120 holds the substrate W. The substrate holding part 120 holds the substrate W horizontally with the upper surface of the substrate W facing upward and the back surface of the substrate W facing vertically downward. In addition, the substrate holding part 120 rotates the substrate W while holding the substrate W.

[0063] For example, the substrate holding unit 120 may be a vacuum chuck. In this case, the substrate holding unit 120 holds the substrate W horizontally by adsorbing the center of the back side (lower side) of the substrate W, which is not a device forming side, onto the upper side of the spin base 121 .

[0064] The substrate holding part 120 includes a rotating base 121, a rotating shaft 122, and an electric motor 123. The rotating shaft 122 is a hollow shaft. The rotating shaft 122 extends in the vertical direction along the rotating axis AX. The rotating base 121 is coupled to the upper end of the rotating shaft 122. The back side of the substrate W contacts the rotating base 121, and the substrate W is placed above the rotating base 121.

[0065] The rotating base 121 is in the shape of a disk and supports the substrate W in a horizontal posture. The rotating base 121 has a disk portion 121A and a cylindrical portion 121B. The substrate W is placed above the disk portion 121A, and the back of the substrate W contacts the disk portion 121A. The disk portion 121A is in the shape of a disk along the horizontal direction. The cylindrical portion 121B is embedded in the upper end of the rotating shaft 122. The diameter of the upper surface of the disk portion 121A is smaller than the diameter of the substrate W.

[0066] The rotation shaft 122 extends downward from the center of the spin base 121. The electric motor 123 applies a rotational force to the rotation shaft 122. The electric motor 123 rotates the rotation shaft 122 in the rotation direction to rotate the substrate W and the spin base 121 around the rotation axis AX.

[0067] The substrate holding portion 120 further includes a suction unit 127. The suction unit 127 includes a vacuum pump. The substrate W disposed on the upper surface of the rotating base 121 is sucked by the suction unit 127, so that the substrate W is held by the rotating base 121. A suction path 125 is inserted through the rotating base 121 and the rotating shaft 122. The suction path 125 has a suction port 124 exposed from the center of the upper surface of the rotating base 121. The suction path 125 is connected to a suction pipe 126. The suction pipe 126 is connected to the suction unit 127. A valve 128 for opening and closing the path is arranged on the suction pipe 126.

[0068] As described above, the substrate holding portion 120 may also be a vacuum chuck. However, the substrate holding portion 120 is not limited to a vacuum chuck. The substrate holding portion 120 may also have any mechanism for holding the substrate W from the back. Alternatively, the substrate holding portion 120 may also be used in combination with a clamping chuck that allows a plurality of chuck pins to contact the peripheral end surface of the substrate W.

[0069] The chemical liquid supply unit 130 supplies chemical liquid to the upper surface of the substrate W. The substrate W can be processed by the chemical liquid. For example, etching, surface treatment, property imparting, processing film formation, removal of at least a portion of the film, and cleaning are performed on the substrate W by the chemical liquid. For example, the chemical liquid includes hydrofluoric acid (hydrogen fluoride water: HF). Alternatively, the chemical liquid may also be a liquid including at least one of sulfuric acid, acetic acid, nitric acid, hydrochloric acid, citric acid, buffered hydrofluoric acid (BHF), diluted hydrofluoric acid (DHF), ammonia water, diluted ammonia water, hydrogen peroxide water, organic base (for example, TMAH: tetramethylammonium hydroxide, etc.), surfactant, and anti-corrosion agent. In addition, the chemical liquid may also be a mixed liquid of the above-mentioned liquids. For example, as examples of chemical liquids mixed with these liquids, SPM (sulfuric acid hydrogen peroxide water mixed liquid), SC1 (ammonia hydrogen peroxide water mixed liquid), SC2 (hydrochloric acid hydrogen peroxide water mixed liquid), etc. can be listed.

[0070] The liquid medicine supply unit 130 includes a nozzle 131, a supply pipe 132, and a valve 133. The nozzle 131 is opposite to the upper surface of the substrate W, and sprays the liquid medicine toward the upper surface of the substrate W. The supply pipe 132 is combined with the nozzle 131. The nozzle 131 is provided at the top of the supply pipe 132. The liquid medicine is supplied to the supply pipe 132 from a liquid medicine supply source. The valve 133 is provided in the supply pipe 132. The valve 133 opens and closes the flow path in the supply pipe 132.

[0071] The rinse liquid supply unit 135 supplies the rinse liquid to the upper surface of the substrate W. The rinse liquid can be used to rinse the chemical solution or the like attached to the substrate W. The rinse liquid supplied from the rinse liquid supply unit 135 may also be deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, hydrochloric acid water of a diluted concentration (e.g., about 10 ppm to 100 ppm), or reduced water (hydrogen water).

[0072] The rinse liquid supply unit 135 includes a nozzle 136, a supply pipe 137, and a valve 138. The nozzle 136 is opposite to the upper surface of the substrate W, and sprays the rinse liquid toward the upper surface of the substrate W. The supply pipe 137 is connected to the nozzle 136. The nozzle 136 is provided at the top end of the supply pipe 137. The rinse liquid is supplied from the supply source to the supply pipe 137. The valve 138 is provided in the supply pipe 137. The valve 138 opens and closes the flow path in the supply pipe 137.

[0073] The organic solvent supply unit 140 supplies an organic solvent to the upper surface of the substrate W. For example, preferably, the organic solvent can be mixed with the solvent contained in the filling material and the water contained in the rinse liquid. The organic solvent can be isopropyl alcohol (IPA). Alternatively, the organic solvent can also be ethanol, acetone, propylene glycol ethyl ether (PGEE), propylene glycol monomethyl ether acetate (PGMEA), etc.

[0074] The organic solvent supply unit 140 includes a nozzle 142, a supply pipe 144, and a valve 146. The nozzle 142 is opposite to the upper surface of the substrate W, and sprays the organic solvent toward the upper surface of the substrate W. The supply pipe 144 is combined with the nozzle 142. The nozzle 142 is provided at the top of the supply pipe 144. The organic solvent is supplied from a supply source to the supply pipe 144. The valve 146 is provided in the supply pipe 144. The valve 146 opens and closes the flow path in the supply pipe 144.

[0075] The filling material supply unit 150 supplies the filling material to the upper surface of the substrate W. By supplying the filling material, a filling film is formed on the substrate W. When a fine pattern is formed on the substrate W, the filling material fills the gap between the fine patterns to form a filling film. By supplying the filling material by the filling material supply unit 150, it is possible to prevent the fine pattern of the substrate W from collapsing as the rinse liquid with high surface tension dries after cleaning. In addition, the filling film can be formed not only in the gap between the fine patterns, but also in the form of a bridge on the upper part of the fine pattern.

[0076] For example, preferably, the filling film formed by the filling material has sublimation. The filling material is, for example, a solution in which a sublimation acrylic polymer is dissolved in an organic solvent. As the organic solvent for dissolving the sublimation acrylic polymer, PGEE and the like can be cited. The organic solvent can also be IPA, PGMEA and the like.

[0077] The filling material supply unit 150 includes a nozzle 152, a supply pipe 154, and a valve 156. The nozzle 152 is opposite to the upper surface of the substrate W, and sprays the filling material toward the upper surface of the substrate W. The supply pipe 154 is combined with the nozzle 152. The nozzle 152 is provided at the top of the supply pipe 154. The filling material is supplied from a supply source to the supply pipe 154. The valve 156 is provided based on the supply pipe 154. The valve 156 opens and closes the flow path in the supply pipe 154.

[0078] The first cleaning liquid supply unit 160 supplies cleaning liquid to the back surface of the substrate W. The first cleaning liquid supply unit 160 supplies cleaning liquid to the inner side of the back surface of the substrate W. In this specification, the first cleaning liquid supply unit 160 may be simply described as the cleaning liquid supply unit 160.

[0079] The cleaning liquid supply unit 160 may also supply an organic solvent as the cleaning liquid. Preferably, the organic solvent includes at least one of IPA, PGMEA, PGEE, ethanol and acetone. Alternatively, the cleaning liquid supply unit 160 may also supply water as the cleaning liquid.

[0080] The cleaning liquid supply unit 160 includes a nozzle 162, a supply pipe 164, and a valve 166. The nozzle 162 is opposite to the back side of the substrate W, and sprays the cleaning liquid toward the back side of the substrate W. The supply pipe 164 is combined with the nozzle 162. The nozzle 162 is provided at the top end of the supply pipe 164. The cleaning liquid is supplied from a supply source to the supply pipe 164. The valve 166 is provided in the supply pipe 164. The valve 166 opens and closes the flow path in the supply pipe 164.

[0081] In the substrate processing apparatus 100 , the filling material supplier 150 supplies the filling material to the upper surface of the substrate W, thereby preventing pattern collapse when the rinse liquid is dried. However, when the filling material is supplied to the substrate, a portion of the filling material may adhere to the back surface of the substrate.

[0082] Figure 2 Schematic diagram showing the back side of the substrate W to which the filling material is attached. Figure 2As shown in FIG. 1 , when a filling material is supplied to a substrate W to form a filling layer, even if the substrate W is processed by plasma ashing, the filling material may sometimes adhere to the back side of the substrate W. When the filling material adheres to the back side of the substrate W, when the substrate W is exposed in a subsequent photolithography process, the surface height of the substrate W deviates from a predetermined height, and thus light may not be properly focused. In this case, an exposure pattern cannot be properly formed, and the yield of the product is reduced.

[0083] like Figure 1 As shown, in the substrate processing apparatus 100 of the present embodiment, the cleaning liquid supply unit 160 supplies the cleaning liquid to the back side of the substrate W. Specifically, the cleaning liquid supply unit 160 supplies the cleaning liquid toward the area of ​​the back side of the substrate W held by the substrate holding unit 120. Therefore, according to the substrate processing apparatus 100 of the present embodiment, it is possible to suppress the filling material from being attached to the back side of the substrate W.

[0084] Furthermore, if the substrate W is heated while the filling material is attached to the back surface of the substrate W, the filling material polymerizes, making it difficult to remove the filling material. Therefore, it is preferable to remove the filling material attached to the back surface of the substrate W before heating the substrate W.

[0085] Here, refer to Figure 3A as well as Figure 3B The positional relationship among the substrate holding unit 120 , the cleaning liquid supply unit 160 , and the substrate W in the substrate processing apparatus 100 according to the present embodiment will be described. Figure 3A as well as Figure 3B FIG. 1 is a schematic top view of a substrate W, a substrate holding unit 120, and a cleaning liquid supply unit 160 in the substrate processing apparatus 100 according to the present embodiment. Figure 3A as well as Figure 3B In order to avoid excessively complicated description, components other than the substrate W, the circular plate portion 121A of the substrate holding portion 120 , and the nozzle 162 of the cleaning liquid supply portion 160 are omitted and shown.

[0086] like Figure 1 as well as Figure 3A As shown, the rotating base 121 of the substrate holding part 120 has a circular plate part 121A, and the substrate W is arranged on the circular plate part 121A in such a way that the center of the substrate W coincides with the center of the circular plate part 121A. The nozzle 162 of the cleaning liquid supply part 160 is arranged on the radial outer side of the circular plate part 121A. The nozzle 162 of the cleaning liquid supply part 160 is directed toward Figure 3A The direction indicated by the arrow. Figure 3A The arrow in FIG. 1 is directed from the nozzle 162 toward the boundary of the circular plate portion 121A of the substrate holding portion 120. Therefore, the nozzle 162 of the cleaning liquid supply unit 160 can be directed toward Figure 3ASpray the cleaning fluid in the direction of the arrow.

[0087] like Figure 3B As shown in FIG. 1 , the substrate holding part 120 holds the substrate W and rotates it in the rotation direction R. While the substrate holding part 120 holds the substrate W and rotates, the cleaning liquid supply part 160 supplies the cleaning liquid from the nozzle 162 to the back side of the substrate W. In this case, the cleaning liquid supply part 160 supplies the cleaning liquid toward the area on the back side of the substrate W held by the substrate holding part 120. The cleaning liquid CW supplied to the back side of the substrate W is diffused not only to the vicinity of the substrate holding part 120 in the substrate W, but also to the back side of the substrate by centrifugal force. If the cleaning liquid supply part 160 continues to supply the cleaning liquid CW, the cleaning liquid CW spreads to the entire back side of the substrate W.

[0088] Next, refer to Figure 4A to Figure 4D A process in which the cleaning liquid CW spreads on the back surface of the substrate W in the substrate processing apparatus 100 according to the present embodiment will be described. Figure 4A to Figure 4D 1 is a schematic top view showing the positional relationship among the substrate holding portion 120, the cleaning liquid CW, and the substrate W in the substrate processing apparatus 100 of the present embodiment. Figure 4A to Figure 4D , the vicinity of the circular plate portion 121A of the substrate holding portion 120 is shown in an enlarged manner.

[0089] like Figure 4A As shown in FIG. 1 , if the supply of the cleaning liquid CW starts while the substrate W is rotating, the cleaning liquid CW reaches the back side of the substrate W. Furthermore, when the supply of the cleaning liquid CW starts, the cleaning liquid CW ejected from the nozzle 162 reaches a point P on the back side of the substrate W. In the following description, the point P at which the cleaning liquid CW ejected from the nozzle 162 reaches the back side of the substrate W is referred to as an arrival point P.

[0090] In the substrate processing apparatus 100 of the present embodiment, the nozzle 162 of the cleaning liquid supply unit 160 is oriented in a direction along the rotation direction of the substrate W. In addition, preferably, the nozzle 162 of the cleaning liquid supply unit 160 is oriented toward the substrate W in such a manner that a component of the moving direction of the cleaning liquid CW just before reaching the substrate W is projected onto the substrate W and is parallel to a normal direction of the arrival point P based on the center of the substrate W.

[0091] Then, if Figure 4B As shown in FIG. 1 , as the cleaning liquid CW is further supplied and the substrate W rotates, the cleaning liquid CW spreads from the arrival point P of the substrate W. At this time, the cleaning liquid CW spreads on the back surface of the substrate W along the direction in which the cleaning liquid CW is sprayed from the nozzle 162 of the cleaning liquid supply unit 160, and spreads in the radial direction of the substrate W due to the centrifugal force caused by the rotation of the substrate W. Therefore, the center of the diffusion of the cleaning liquid CW is radially outward compared to the component of the moving direction of the cleaning liquid CW just before reaching the substrate W projected onto the substrate W.

[0092] like Figure 4C As shown in FIG. 1 , as the cleaning liquid CW is further supplied and the substrate W rotates, the cleaning liquid CW further diffuses from the arrival point P of the substrate W. When focusing on the radially inner component of the cleaning liquid CW of the substrate W, the cleaning liquid CW approaches the area on the back side of the substrate W that is held by the substrate holding portion 120. Specifically, the central portion of the back side of the substrate W contacts the circular plate portion 121A of the rotating base 121 of the substrate holding portion 120, and therefore, the cleaning liquid CW approaches the boundary between the substrate W and the circular plate portion 121A. On the other hand, when focusing on the radially outer component of the substrate W of the cleaning liquid CW, the cleaning liquid CW diffuses along the component that projects the traveling direction of the cleaning liquid CW that is ejected from the nozzle 162 and is about to reach the substrate W onto the substrate W, and diffuses in the radial direction of the substrate W by the centrifugal force caused by the rotation of the substrate W.

[0093] like Figure 4D As shown, with the further supply of the cleaning liquid CW and the rotation of the substrate W, the cleaning liquid CW further spreads from the arrival point P of the substrate W. When focusing on the radial inner component of the substrate W in the cleaning liquid CW, the cleaning liquid CW further approaches the area on the back side of the substrate W that is held by the substrate holding portion 120, but does not reach the substrate holding portion 120, and moves close to the area held by the substrate holding portion 120. In addition, the distance between the cleaning liquid CW and the substrate holding portion 120 is preferably less than 3 mm, and more preferably less than 1 mm. Specifically, the central portion of the back side of the substrate W contacts the circular plate portion 121A of the rotating base 121 of the substrate holding portion 120, and therefore, the cleaning liquid CW moves in a manner close to the boundary between the substrate W and the circular plate portion 121A without reaching the substrate holding portion 120. On the other hand, when focusing on the radially outer component of the substrate W in the cleaning liquid CW, the cleaning liquid CW is diffused along the component projected onto the substrate W along the traveling direction of the cleaning liquid CW that is ejected from the nozzle 162 and is about to reach the substrate W, and is diffused radially along the substrate W by the centrifugal force brought about by the rotation of the substrate W.

[0094] Then, as the cleaning liquid CW is further supplied and the substrate W rotates, the cleaning liquid CW further spreads from the arrival point P of the substrate W. Although not shown in the figure here, when focusing on the radial inner component of the substrate W in the cleaning liquid CW, the cleaning liquid CW travels and makes a circle in a manner close to the area held by the substrate holding part 120. Specifically, the central part of the back side of the substrate W contacts the circular plate part 121A of the rotating base 121 of the substrate holding part 120, and therefore, the cleaning liquid CW makes a circle in a manner close to the boundary between the substrate W and the circular plate part 121A. On the other hand, when focusing on the radial outer component of the substrate W in the cleaning liquid CW, the cleaning liquid CW spreads along the component that is projected onto the substrate W in the direction of travel of the cleaning liquid CW ejected from the nozzle 162 and just before reaching the substrate W, reaches the outer peripheral edge of the substrate W, and spreads to the entire back side of the substrate W.

[0095] In the substrate processing apparatus 100 of the present embodiment, the cleaning liquid CW is supplied by the cleaning liquid supply unit 160, and the cleaning liquid CW is spread over substantially the entire area of ​​the back surface of the substrate W that is not held by the substrate holding unit 120. Therefore, even if the filling material supply unit 150 supplies the filling material to the substrate W, the filling material attached to the back surface of the substrate W can be cleaned by the cleaning liquid CW of the cleaning liquid supply unit 160.

[0096] In addition, Figure 4A In the embodiment, the distance between the arrival point P and the substrate holding part 120 is preferably determined in consideration of the spread of the cleaning liquid CW. For example, the distance between the arrival point P and the substrate holding part 120 may be greater than 0.5 mm and less than 5.0 mm, or greater than 0.8 mm and less than 4.0 mm.

[0097] In addition, in reference Figures 3A to 4D In the above description, the component of the traveling direction of the cleaning liquid CW just before it reaches the substrate W is projected onto the substrate W and is roughly parallel to the normal direction of the arrival point based on the center of the substrate W, but the present embodiment is not limited to this. In the following description of this specification, the component of the traveling direction of the cleaning liquid CW just before it reaches the substrate W after being ejected from the nozzle 162 is sometimes recorded as "the incident direction of the cleaning liquid CW". The incident direction of the cleaning liquid CW may not be parallel to the normal direction of the arrival point based on the center of the substrate W. Even if the position of the nozzle 162 is the same, the incident direction of the cleaning liquid CW will be different depending on the ejection distance of the cleaning liquid CW.

[0098] Next, refer to Figure 5 The relationship between the incident direction of the cleaning liquid CW and the normal direction of the arrival point with respect to the center of the substrate W will be described. Figure 51 is a schematic diagram showing the arrival point of the cleaning liquid supplied from the cleaning liquid supply unit 160 to the substrate W in the substrate processing apparatus 100 according to the present embodiment.

[0099] When the cleaning liquid sprayed from the nozzle 162 of the cleaning liquid supply unit 160 reaches the arrival point P1 on the substrate W, the incident direction of the cleaning liquid CW is parallel to the normal direction of the arrival point based on the center of the substrate W. However, the incident direction of the cleaning liquid CW may not be parallel to the normal direction of the arrival point based on the center of the substrate W.

[0100] For example, the incident direction of the cleaning liquid CW may also be directed radially outward relative to the normal direction of the arrival point based on the center of the substrate W. For example, when the cleaning liquid ejected from the nozzle 162 of the cleaning liquid supply unit 160 reaches the arrival point P2 on the substrate W, the incident direction of the cleaning liquid CW is directed radially outward relative to the normal direction of the arrival point based on the center of the substrate W. In this case, the cleaning liquid CW is subjected to the centrifugal force radially outward of the substrate W, and therefore, the cleaning liquid CW sometimes does not fully diffuse radially inward. Therefore, preferably, the angle θ1 between the incident direction of the cleaning liquid CW and the normal direction of the arrival point based on the center of the substrate W is not too large. For example, preferably, the angle θ1 is less than 30°.

[0101] Alternatively, the incident direction of the cleaning liquid CW may be directed radially inward relative to the normal direction of the arrival point based on the center of the substrate W. For example, when the cleaning liquid ejected from the nozzle 162 of the cleaning liquid supply unit 160 arrives at the arrival point P3 on the substrate W, the incident direction of the cleaning liquid CW is directed radially inward relative to the normal direction of the arrival point based on the center of the substrate W. In this case, the component of the incident direction of the cleaning liquid CW is the component relative to the centrifugal force, and therefore, sometimes the cleaning liquid CW does not fully diffuse radially outward of the substrate W. In addition, when the incident direction of the cleaning liquid CW is directed radially inward relative to the normal direction of the arrival point based on the center of the substrate W, when the cleaning liquid CW reaches the boundary between the substrate holding unit 120 and the substrate W, sometimes the cleaning liquid CW penetrates into the interior of the substrate holding unit 120 from the gap between the substrate holding unit 120 and the substrate W, thereby reducing the substrate holding function of the substrate holding unit 120. Therefore, it is preferable that the angle θ2 between the incident direction of the cleaning liquid CW and the normal direction of the arrival point based on the center of the substrate W is not too large. For example, it is preferable that the angle θ2 is 20 degrees or less.

[0102] Furthermore, when the incident direction of the cleaning liquid CW is substantially parallel to the normal direction of the arrival point based on the center of the substrate W, the ejection direction of the nozzle 162, the incident direction of the cleaning liquid CW, and the ejection distance can be easily adjusted. Therefore, the incident direction of the cleaning liquid CW may also be substantially parallel to the normal direction of the arrival point based on the center of the substrate W.

[0103] In addition, in reference Figure 1 , Figure 3A to Figure 5 In the above description, the cleaning liquid supply unit 160 discharges the cleaning liquid onto the substrate W from one nozzle, but the present embodiment is not limited thereto. The cleaning liquid supply unit 160 may discharge the cleaning liquid onto the substrate W from a plurality of nozzles.

[0104] In addition, in reference Figure 3A as well as Figure 3B In the above description, the cleaning liquid supply unit 160 discharges one cleaning liquid from the nozzle to the substrate W, but the present embodiment is not limited thereto. The cleaning liquid supply unit 160 may discharge different cleaning liquids from a plurality of nozzles to the substrate W.

[0105] Here, refer to Fig. 6A as well as Figure 6B The cleaning liquid supply unit 160 in the substrate processing apparatus 100 according to the present embodiment will be described. Fig. 6A FIG. 1 is a schematic top view of the substrate processing apparatus 100 according to the present embodiment. Fig. 6A As shown, the cleaning liquid supply unit 160 includes nozzles 162a, 162b, 162c, and 162d as nozzles.

[0106] The nozzles 162a, 162b, 162c, and 162d are arranged at equal intervals with the rotation axis AX of the substrate holding portion 120 as the center. The distances from the nozzles 162a, 162b, 162c, and 162d to the rotation axis AX are substantially equal to each other. The nozzles 162a and 162c are arranged at positions opposite to each other, and the nozzles 162b and 162d are arranged at positions opposite to each other.

[0107] Figure 6B FIG. 1 is a schematic top view of the substrate processing apparatus 100 according to the present embodiment. Figure 6BAs shown, the nozzles 162a and 162c spray the cleaning liquid along the rotation direction R of the substrate W. In addition, the nozzles 162b and 162d spray the cleaning liquid along the radial direction of the substrate W. Therefore, the distance from the center of the substrate W to the point where the cleaning liquid is sprayed onto the substrate W by the nozzles 162a and 162c is different from the distance from the center of the substrate W to the point where the cleaning liquid is sprayed onto the substrate W by the nozzles 162b and 162d. The distance from the center of the substrate W to the point where the cleaning liquid is sprayed onto the substrate W by the nozzles 162a and 162c is relatively short, and the distance from the center of the substrate W to the point where the cleaning liquid is sprayed onto the substrate W by the nozzles 162b and 162d is relatively long.

[0108] In addition, the cleaning liquid sprayed from the nozzles 162a and 162c may be different from the cleaning liquid sprayed from the nozzles 162b and 162d. For example, IPA may be sprayed from the nozzles 162a and 162c as the cleaning liquid, and DIW may be sprayed from the nozzles 162b and 162d as the cleaning liquid. In this case, the nozzles 162a and 162c may be combined with a common supply pipe, and the nozzles 162b and 162d may be combined with a common supply pipe different from the nozzles 162a and 162c.

[0109] In addition, in reference Figure 1 , Figure 3A to Figure 6B In the above description, the cleaning liquid supply unit 160 of the substrate processing apparatus 100 supplies the cleaning liquid to the inner side of the back side of the substrate W to clean the entire back side of the substrate W, but the present embodiment is not limited thereto. The substrate processing apparatus 100 may also supply the cleaning liquid suitable for cleaning the back side, side surface, and the peripheral portion of the upper surface of the substrate W by a member different from the cleaning liquid supply unit 160.

[0110] Next, refer to Figure 7 The substrate processing apparatus 100 further including the second cleaning liquid supply unit 170 for supplying the cleaning liquid to the back surface of the substrate W will be described. Figure 7 It is a schematic diagram of a substrate processing apparatus 100 according to this embodiment. Figure 7 The substrate processing apparatus 100 shown in FIG. 1 has the same structure as that of the reference 1 except that it further includes a second cleaning liquid supply unit 170 for supplying cleaning liquid to the back side of the substrate W. Figure 1 The above-mentioned substrate processing apparatus 100 has the same structure, so in order to avoid redundancy, repeated description is omitted.

[0111] The substrate processing apparatus 100 of this embodiment includes a second cleaning liquid supply unit 170 in addition to the chamber 110, the substrate holding unit 120, the chemical liquid supply unit 130, the rinse liquid supply unit 135, the organic solvent supply unit 140, the filling material supply unit 150, and the first cleaning liquid supply unit 160. The second cleaning liquid supply unit 170 supplies the cleaning liquid to the back side of the substrate W.

[0112] The second cleaning liquid supply unit 170 supplies cleaning liquid radially outward of the substrate W compared to the first cleaning liquid supply unit 160. Therefore, the cleaning liquid supplied from the second cleaning liquid supply unit 170 fully reaches the side surface of the substrate W, and cleans the back surface, side surface, and peripheral edge portion of the upper surface of the substrate W. In addition, in this specification, the second cleaning liquid supply unit 170 is sometimes simply described as the cleaning liquid supply unit 170.

[0113] The second cleaning liquid supply unit 170 includes a nozzle 172, a supply pipe 174, and a valve 176. The nozzle 172 is opposite to the back side of the substrate W, and supplies the cleaning liquid toward the back side of the substrate W. The supply pipe 174 is coupled to the nozzle 172. The nozzle 172 is disposed at the top end of the supply pipe 174. The cleaning liquid is supplied from a supply source to the supply pipe 174. The valve 176 is disposed in the supply pipe 174. The valve 176 opens and closes the flow path in the supply pipe 174.

[0114] In addition, in reference Figure 7 In the above description, the cleaning liquid supply unit 170 discharges the cleaning liquid onto the substrate W from one nozzle, but the present embodiment is not limited thereto. The cleaning liquid supply unit 170 may discharge the cleaning liquid onto the substrate W from a plurality of nozzles.

[0115] Figure 8 1 is a schematic top view of the substrate processing apparatus 100 of this embodiment. In the substrate processing apparatus 100, the first cleaning liquid supply unit 160 has nozzles 162a, 162b, 162c, and 162d as nozzles. The second cleaning liquid supply unit 170 has nozzles 172a, 172b, 172c, and 172d as nozzles.

[0116] The nozzles 172a, 172b, 172c, and 172d are arranged at equal intervals with respect to the rotation axis of the substrate holding portion 120. In addition, the distances from the nozzles 172a, 172b, 172c, and 172d to the rotation axis AX are substantially equal to each other. The distances from the nozzles 172a, 172b, 172c, and 172d to the rotation axis AX are longer than the distances from the nozzles 162a, 162b, 162c, and 162d to the rotation axis AX.

[0117] The nozzle 172a and the nozzle 172c are arranged at positions opposite to each other, and the nozzle 172b and the nozzle 172d are arranged at positions opposite to each other. Here, the nozzles 172a, 172b, 172c, and 172d eject the cleaning liquid in the rotation direction and radial direction of the substrate W. The ejection direction of the cleaning liquid ejected from the nozzles 172a, 172b, 172c, and 172d is represented by the sum of the component in the rotation direction of the substrate W and the component in the radial direction of the substrate W. The distance from the center of the substrate W to the point where the cleaning liquid is supplied to the substrate W by the second cleaning liquid supply unit 170 is longer than the distance from the center of the substrate W to the point where the cleaning liquid is supplied to the substrate W by the first cleaning liquid supply unit 160. For example, IPA may be ejected from the nozzles 172a, 172b, 172c, and 172d as the cleaning liquid. Alternatively, DIW may be ejected from the nozzles 172a, 172b, 172c, and 172d as the cleaning liquid.

[0118] Furthermore, preferably, by Figure 7 as well as Figure 8 The cleaning liquid supplied by the second cleaning liquid supply unit 170 is at least partially different from the cleaning liquid supplied by the first cleaning liquid supply unit 160. However, the cleaning liquid supplied by the second cleaning liquid supply unit 170 may be the same as the cleaning liquid supplied by the first cleaning liquid supply unit 160.

[0119] Next, refer to Figures 9A to 9C The cleaning liquid supply units 160 and 170 in the substrate processing apparatus 100 according to the present embodiment will be described. Fig.9A 1 is a schematic perspective view of the substrate holding unit 120 and the cleaning liquid supply units 160 and 170 in the substrate processing apparatus 100 of the present embodiment. Fig.9A As shown, the nozzles 162a, 162b, 162c, and 162d of the cleaning liquid supply unit 160 are arranged near the substrate holding unit 120, and the nozzles 172a, 172b, 172c, and 172d of the cleaning liquid supply unit 170 are arranged at positions away from the substrate holding unit 120.

[0120] Fig. 9B FIG. 1 is a partially enlarged top view of the substrate holding unit 120 and the cleaning liquid supply units 160 and 170 in the substrate processing apparatus 100 of the present embodiment. Fig. 9B As shown, the tip of the nozzle 162a is directed upward in the circumferential direction, while the tip of the nozzle 172a is directed upward in a direction obtained by combining a circumferential component and a radial component.

[0121] Fig. 9C FIG. 1 is a partially enlarged cross-sectional side view of the cleaning liquid supply unit 160 in the substrate processing apparatus 100 of the present embodiment. Fig. 9CAs shown, the supply pipe 164 of the cleaning liquid supply unit 160 is orthogonal to the substrate W and extends in the vertical direction. The nozzle 162 is provided at the top of the supply pipe 164. The nozzle 162 is provided so as to be inclined at a predetermined angle θ relative to the horizontal direction at the top of the supply pipe 164 and to face obliquely upward. For example, the angle θ may be greater than 5° and less than 25°, or may be greater than 10° and less than 20°. In addition, the distance between the nozzle 162 and the substrate W along the ejection direction of the nozzle 162 may be greater than 1 mm and less than 20 mm, or may be greater than 1 mm and less than 15 mm.

[0122] Next, refer to Figure 10A to Figure 11 The substrate processing apparatus 100 of this embodiment is described. The substrate processing apparatus 100 of this embodiment includes a plurality of chambers 110 ( Figure 1 as well as Figure 7 ), and also has a chamber 210, which is similar to the reference Figure 1 as well as Figure 7 The substrate processing apparatus 100 is different. Therefore, in order to avoid redundancy, repeated description is omitted.

[0123] Fig. 10A 1 is a schematic top view of the substrate processing apparatus 100 . Fig. 10B 1 is a schematic side view for explaining the structure of the substrate processing apparatus 100. The substrate processing apparatus 100 is a single-sheet type apparatus that performs various processes such as cleaning and etching on substrates W such as semiconductor wafers one by one.

[0124] like Fig. 10A as well as Fig. 10B As shown, the substrate processing apparatus 100 includes a plurality of liquid processing units 100C arranged in units of chambers 110, a plurality of heating processing units 100H arranged in units of chambers 210, a plurality of loading ports LP, an indexer robot IR, a central robot CR, and a control unit 220. A carrier C for accommodating a plurality of substrates W is placed on the loading port LP. The control unit 220 controls the loading port LP, the indexer robot IR, the central robot CR, the liquid processing unit 100C, and the heating processing unit 100H. Fig.12 As shown, the control unit 220 includes a processor 222 and a memory 224 .

[0125] Each load port LP stacks and accommodates a plurality of substrates W. The indexer robot IR transfers the substrates W between the load port LP and the center robot CR. The center robot CR transfers the substrates W between the indexer robot IR and the liquid processing unit 100C. Each liquid processing unit 100C processes the substrates W by spraying a processing liquid onto the substrates W.

[0126] Specifically, the plurality of liquid processing units 100C form a plurality of processing towers TW (four processing towers TW in FIG. 10 ) arranged to surround the central robot CR in a plan view. Each processing tower TW includes a plurality of liquid processing units 100C and a heat treatment unit 100H stacked vertically.

[0127] The substrate processing apparatus 100 further includes a transport path 230 extending in a horizontal direction. The transport path 230 extends linearly from the indexer robot IR toward the center robot CR. A plurality of processing towers TW are symmetrically arranged across the transport path 230. The plurality of processing towers TW are arranged on both sides of the transport path 230 along the direction in which the transport path 230 extends. In the present embodiment, two processing towers TW are arranged on each side of the transport path 230.

[0128] Two of the plurality of processing towers TW near the indexer robot IR are referred to as a first processing tower TWA and a second processing tower TWB. The first processing tower TWA and the second processing tower TWB are opposite to each other across the transport path 230. Two of the plurality of processing towers TW far from the indexer robot IR are referred to as a third processing tower TWC and a fourth processing tower TWD. The third processing tower TWC and the fourth processing tower TWD are opposite to each other across the transport path 230.

[0129] The first treatment tower TWA and the third treatment tower TWC are arranged side by side on the transport path 230. The second treatment tower TWB and the fourth treatment tower TWD are arranged side by side on the transport path 230.

[0130] The first treatment tower TWA includes two liquid treatment units 100C and a heating treatment unit 100H. Similar to the first treatment tower TWA, the second treatment tower TWB to the fourth treatment tower TWD also include two liquid treatment units 100C and a heating treatment unit 100H, respectively. In addition, the plurality of liquid treatment units 100C have the same structure. The plurality of heating treatment units 100H have the same structure.

[0131] like Fig. 10B As shown, in the first treatment tower TWA, a liquid treatment unit 100C, a heating treatment unit 100H, and a liquid treatment unit 100C are stacked, and a heating treatment unit 100H is arranged between the two liquid treatment units 100C. Similarly to the first treatment tower TWA, in the second treatment tower TWB to the fourth treatment tower TWD, a liquid treatment unit 100C, a heating treatment unit 100H, and a liquid treatment unit 100C are stacked, and a heating treatment unit 100H is arranged between the two liquid treatment units 100C.

[0132] Fig.111 is a schematic diagram of a heating treatment unit 100H in the substrate processing apparatus 100 of the present embodiment. The heating treatment unit 100H includes a chamber 210, a substrate holder 200 for holding a substrate W, a heater 201 (substrate heating unit) for heating the substrate W, a cooling unit 202 for cooling the substrate W, and a plurality of lifting pins 203 for moving the substrate W up and down.

[0133] The substrate holder 200 is a plate-shaped member that supports the substrate W from below so that the substrate W is in a horizontal posture. The substrate holder 20 is included in a substrate holding unit that holds the substrate W in a horizontal position. The substrate holder 200 is accommodated in a chamber 210 .

[0134] The heater 201 and the cooling unit 202 are built in the substrate holder 200. The heater 201, the cooling unit 202 and the substrate holder 200 constitute a temperature control plate. The heater 201 heats the substrate W by heat conduction or heat radiation. The heater 201 is connected to a heater power supply unit 209 that supplies power to the heater 201. The heater 201 can heat the substrate W to about 250°C.

[0135] An electromagnetic wave irradiation unit for irradiating electromagnetic waves (ultraviolet rays, infrared rays, microwaves, X-rays, lasers, etc.) to heat the substrate W may be used instead of the heater 201. The cooling unit 202 may also have a cooling passage passing through the inside of the substrate holder 200. The cooling unit 202 may also have an electronic cooling element.

[0136] The plurality of lift pins 203 are respectively inserted into the plurality of through holes penetrating the substrate holder 200. The plurality of lift pins 203 are lifted and lowered between the upper position and the lower position by the lift pin lifting unit 216. When the plurality of lift pins 203 are in the upper position, the substrate W and the substrate holder 200 are separated upward. When the plurality of lift pins 203 are in the lower position, the upper ends of the plurality of lift pins 203 are retracted into the inside of the substrate holder 200. Therefore, the substrate W is supported from below by the substrate holder 200.

[0137] The chamber 210 includes: a base portion 211; a movable cover portion 212 that moves up and down relative to the base portion 211. The inner space 213 of the chamber 210 is divided by the base portion 211 and the movable cover portion 212. The movable cover portion 212 is raised and lowered between an upper position and a lower position by a cover driving unit 214. When the movable cover portion 212 is in the lower position, the base portion 211 contacts the movable cover portion 212. As a result, the chamber 210 is closed. When the movable cover portion 212 is in the upper position, the central robot CR can enter the inner space 213 of the chamber 210.

[0138] Fig.12 is a block diagram of the substrate processing apparatus 100 according to this embodiment. Fig.12As shown, the control unit 220 includes a microcomputer and controls the control objects of the substrate processing apparatus 100 according to a predetermined program.

[0139] Specifically, the control unit 220 includes a processor 222 and a memory 224 storing a program. The control unit 220 is configured to execute various controls for substrate processing by executing the program through the processor 222. In particular, the control unit 220 controls the operation of the indexer robot IR, the center robot CR, the gate opening and closing unit 116, the cover driving unit 214, the lift pin lifting unit 216, the heater power supply unit 209, the first shutter lifting unit 193L, the second shutter lifting unit 194L, the nozzle moving unit 158, and the valves 128, 133, 138, 146, 156, and 166.

[0140] Next, refer to Figure 1 , Figure 7 , Figures 10A to 15C Substrate processing by the substrate processing apparatus 100 will be described. Fig.13 1 is a flowchart for explaining substrate processing in the substrate processing apparatus 100 , and mainly shows processing implemented by the control unit 220 executing a program. Figures 14A to 14C as well as Figures 15A to 15C It is a schematic diagram for explaining substrate processing.

[0141] The substrate processing apparatus 100 continuously processes the substrates W. During the continuous processing of the substrates W, the heater 201 of the heat treatment unit 100H is maintained in a state of being energized by the heater energizing unit 209 (see Fig.12 ).

[0142] First, if Fig.14A As shown, through the indexer robot IR, the center robot CR ( Fig. 10A as well as Fig. 10B ) The substrate W is carried from the carrier C to the liquid processing unit 100C (first carrying-in step: S102). The central robot CR passes through the entrance 112 ( Figure 1 as well as Figure 7 ) enters the liquid processing unit 100C. The substrate W carried into the liquid processing unit 100C is delivered from the central robot CR to the substrate holding unit 120. The substrate W is placed on the spin base 121 with the upper surface facing upward.

[0143] Then, the valve 128 is opened. Thus, the substrate W is held by the substrate holding portion 120 in a state where the back surface of the substrate W contacts the upper surface of the spin base 121 (a first substrate holding step). Then, the substrate W is maintained in a horizontal state until it is carried out of the liquid processing unit 100C by the central robot CR.

[0144] Then, if Fig. 14B As shown, the electric motor 123 starts rotating the substrate W (substrate rotating step: S104 ). Then, the first shutter plate lifting unit 193L and the second shutter plate lifting unit 194L raise the first shutter plate 193 and the second shutter plate 194 to the side of the substrate W.

[0145] Then, if Fig. 14C As shown, the valve 133 is opened, and the chemical liquid starts to be supplied from the nozzle 131 of the chemical liquid supply unit 130 to the upper surface of the substrate W. The chemical liquid supplied to the upper surface of the substrate W is spread over the entire upper surface of the substrate W by centrifugal force. Thus, the substrate W is processed by the chemical liquid (chemical liquid processing step: S106). The chemical liquid discharged to the outside of the substrate W by the centrifugal force is blocked by the first baffle 193.

[0146] After the chemical solution is supplied to the upper surface of the substrate W for a predetermined time, the valve 133 is closed, and before the organic solvent is ejected, the first baffle plate lifting unit 193L moves the first baffle plate 193 to the lower position and opens the valve 146. Fig.15A As shown, the organic solvent is supplied from the nozzle 142 of the organic solvent supply unit 140 to the upper surface (organic solvent supply process: S108). The organic solvent supplied to the upper surface is spread over the entire upper surface by centrifugal force. As a result, the chemical liquid on the substrate W is replaced by the organic solvent. The chemical liquid and the organic solvent discharged to the outside of the substrate W by the centrifugal force are blocked by the second baffle 194.

[0147] During the supply of the organic solvent to the upper surface, the nozzle moving unit 158 ​​moves the nozzle 152 to the center position. In addition, after the organic solvent is supplied to the upper surface of the substrate W for a predetermined time, the valve 146 is closed and the valve 156 is opened. Fig. 15B As shown, the filling material is supplied from the nozzle 152 of the filling material supply unit 150 to the upper surface of the substrate W (filling material supply process: S110). The filling material supplied to the upper surface of the substrate W is spread over the entire upper surface of the substrate W by the centrifugal force. As a result, the organic solvent on the substrate W is replaced by the filling material. As a result, the upper surface of the substrate W is covered with a liquid film of the filling material. The organic solvent and the filling material discharged to the outside of the substrate W by the centrifugal force are blocked by the second baffle 194. After the nozzle 152 finishes ejecting the filling material and before ejecting the cleaning liquid, it moves to the retreat position.

[0148] The filling material supplied from the nozzle 152 to the upper surface of the substrate W may sometimes spread from the peripheral portion of the upper surface to the back side of the substrate W. In addition, there is a case where the filling material scattered outside the upper surface of the substrate W splashes from the first baffle 193 and the second baffle 194 and adheres to the peripheral portion of the back side. Therefore, after the upper surface of the substrate W is covered with a liquid film of the filling material, the valve 166 and the valve 176 are opened. As a result, as Fig. 15CAs shown, the cleaning liquid is supplied from the nozzle 162 of the cleaning liquid supply unit 160 and the nozzle 172 of the cleaning liquid supply unit 170 to the back side of the substrate W (cleaning liquid supply process: S112). The cleaning liquid sprayed from the nozzle 162 and the nozzle 172 is supplied to the back side of the substrate W to clean the back side of the substrate W. Therefore, contamination of the back side caused by the filling material can be suppressed. In this way, the cleaning liquid supply unit 160 functions as a cleaning unit.

[0149] Then, the valve 166 and the valve 176 are closed, and the second shutter plate 194 is moved to the lower position. Then, the electric motor 123 stops the rotation of the substrate W. Then, the valve 128 is closed.

[0150] Then, through the gate opening and closing unit 116 ( Figure 1 as well as Figure 7 ) opens gate 114 again. Then, central robot CR enters liquid processing unit 100C through entrance 112, and carries out substrate W from liquid processing unit 100C (first carrying-out step: S114).

[0151] Then, the substrate W is carried into the heat treatment unit 100H by the central robot CR. Fig.11 )(Second loading process: S116). At this time, the movable cover 212 is located in the upper position by the cover driving unit 214, and the central robot CR can enter the heating treatment unit 100H. And, the substrate W is held horizontally by the substrate holder 200 (second substrate holding process). Specifically, after the substrate W is handed over to the plurality of lifting pins 203 arranged in the upper position, the lifting pins 203 are moved to the lower position by the lifting pin lifting unit 216. Thus, the substrate W is placed on the upper surface of the substrate holder 200. Then, the central robot CR retreats from the heating treatment unit 100H. Then, the cover driving unit 214 places the movable cover 212 in the lower position. Thus, the chamber 210 is closed.

[0152] In the heat treatment unit 100H, the substrate W is heated by the heater 201 built into the substrate holder 200 (substrate heating process: S118). As a result, the filling material covering the upper surface of the substrate W is solidified (solidification process). In detail, the solvent contained in the filling material evaporates, and only the solid component remains on the upper surface. As a result, a sublimable coating film covering the upper surface of the substrate W is formed. By performing the solidification process, the coating film can be reliably formed.

[0153] In addition, the above-mentioned periphery cleaning process is performed before the curing process starts. Therefore, the periphery of the back side is cleaned before the filling material is cured by the curing process. Therefore, compared with the case where the periphery of the back side is cleaned after the filling material is cured, the periphery of the back side can be cleaned more easily. Then, the cover driving unit 214 ( Fig.12) The movable cover 212 is located at the upper position, and the plurality of lift pins 203 are moved to the upper position by the lift pin lift unit 216. Then, the central robot CR receives the substrate W from the plurality of lift pins 203 and unloads the substrate W from the heat treatment unit 100H (S120: second unloading step). The substrate W can be processed in the above manner.

[0154] Furthermore, the rotation speed of the substrate W may be appropriately changed according to the processing of the substrate W. For example, after the filling material is supplied to the substrate W, the rotation speed of the substrate W may be appropriately changed.

[0155] Next, refer to Fig.16 An embodiment in which the rotation speed of the substrate W is changed after the filling material is supplied to the substrate W will be described. Fig.16 1 is a flowchart for explaining the substrate processing method in the substrate processing apparatus of the present embodiment. In addition, the substrate processing method in the substrate processing apparatus of the present embodiment is similar to the following except for the details of the filling material supplying step (S110) and the cleaning liquid supplying step (S112). Fig.13 The flowchart shown is the same, therefore, in Fig.16 Only the filling material supplying step (S110) and the cleaning liquid supplying step (S112) in the flow chart are shown.

[0156] like Fig.16 As shown, in the filling material supplying step (S110), while the electric motor 123 is rotating the substrate W, the valve 156 is opened, and the filling material starts to be ejected from the nozzle 152 of the filling material supplying unit 150 toward the upper surface of the substrate W, and a predetermined amount of the filling material is ejected (filling material ejecting step: S110a). Then, the valve 156 is closed, and the ejection of the filling material from the nozzle 152 toward the upper surface of the substrate W is stopped.

[0157] Then, the electric motor 123 rotates the substrate W at a first rotation speed. The thickness of the filling layer is determined by the discharge amount of the filling material and the first rotation speed (film thickness determination step: S110b). For example, the first rotation speed is 1000 rpm or more and 3000 rpm or less.

[0158] Then, the electric motor 123 rotates the substrate W at a second rotation speed. The second rotation speed is lower than the first rotation speed. By rotating the substrate W at a relatively low second rotation speed, even if the substrate W is a fine structure, the filling material can be fully distributed over the entire surface of the substrate W (infiltration process: S110c). For example, the second rotation speed is greater than 10 rpm and less than 500 rpm.

[0159] Then, the electric motor 123 rotates the substrate W at a third rotation speed. The third rotation speed is higher than the second rotation speed. By rotating the substrate W at a relatively high third rotation speed, the filling material remaining on the substrate W can be blown away, thereby drying the substrate W (drying step: S110d). For example, the third rotation speed is greater than 1000 rpm and less than 3000 rpm.

[0160] Then, the cleaning liquid is supplied from the nozzle 162 of the cleaning liquid supply unit 160 to the back surface of the substrate W. The cleaning liquid ejected from the nozzle 162 is supplied to the back surface of the substrate W, thereby cleaning the back surface of the substrate W (cleaning liquid supplying step: 112).

[0161] Reference Figure 7 As described above, when the substrate processing apparatus 100 has the second cleaning liquid supply unit 170 in addition to the first cleaning liquid supply unit 160, first, the cleaning liquid ejected from the nozzle 162 is supplied to the inner side of the back side of the substrate W to clean the inner side of the back side of the substrate W (cleaning liquid inner side supply process: S112a). In this case, the electric motor 123 rotates the substrate W at a fourth rotation speed. The fourth rotation speed is lower than the third rotation speed. By rotating the substrate W at the fourth rotation speed of a relatively low speed, the back side of the substrate W can be reliably cleaned by using the cleaning liquid supplied to the inner side of the back side of the substrate W. For example, the fourth rotation speed is greater than 10 rpm and less than 200 rpm.

[0162] Then, the cleaning liquid ejected from the nozzle 172 is supplied to the back side of the substrate W to clean the outer side and the side of the back side of the substrate W (cleaning liquid outer side supply process: S112b). In this case, the electric motor 123 rotates the substrate W at a fifth rotation speed. The fifth rotation speed is higher than the fourth rotation speed. By rotating the substrate W at a relatively high fifth rotation speed, the back side, the side and the peripheral edge of the upper surface of the substrate can be reliably cleaned by the cleaning liquid supplied to the outer side of the back side of the substrate W. For example, the fifth rotation speed is greater than 50 rpm and less than 2000 rpm.

[0163] In addition, in reference Fig.16 In the above description, the cleaning liquid outer side supply process (S112b) is performed after the cleaning liquid inner side supply process (S112a), but the present embodiment is not limited thereto. The cleaning liquid inner side supply process (S112a) may also be performed after the cleaning liquid outer side supply process (S112b). However, the cleaning liquid supplied to the rotating substrate W is subjected to centrifugal force from the inner side to the outer side of the substrate W. Therefore, by performing the cleaning liquid outer side supply process (S112b) after the cleaning liquid inner side supply process (S112a), the inner side, the outer side, and the side surface of the substrate W can be fully cleaned.

[0164] In addition, in reference Fig.16In the above description, the cleaning liquid outer supply step ( S112b ) is performed after the cleaning liquid inner supply step ( S112a ), but the present embodiment is not limited thereto. The cleaning liquid may be supplied to the inner side and the outer side of the substrate W at the same time.

[0165] Fig.17 1 is a flowchart for explaining the substrate processing method in the substrate processing apparatus 100 of the present embodiment. The substrate processing method in the substrate processing apparatus of the present embodiment is similar to the following except for the details of the cleaning liquid supplying step (S112). Fig.13 as well as Fig.16 The flowchart shown is the same, therefore, in Fig.17 Only the cleaning liquid supplying step (S112) is shown.

[0166] like Fig.17 As shown, first, the cleaning liquid ejected from the nozzle 162 is supplied to the back surface of the substrate W, thereby cleaning the inner side of the back surface of the substrate W (cleaning liquid inner side supplying step: S112a).

[0167] Then, the cleaning liquid is continuously ejected from the nozzle 162, and the cleaning liquid is started to be ejected from the nozzle 172. By ejecting the cleaning liquid from the nozzles 162 and 172 toward the back side of the substrate W, the outer side and the side surface of the substrate W can be cleaned from the inner side of the back side at the same time (cleaning liquid both-side supply process: S112b1).

[0168] As reference Fig.16 as well as Fig.17 As described above, it is preferred that the outer side and the side of the back side of the substrate W are cleaned after the cleaning liquid inner side supplying step (S112a). Thus, after the filling material ejecting step (S110a), and during the period when the contaminated environment in the chamber 110 and / or splashes from the first baffle 193 and the second baffle 194 are likely to occur, the back side of the substrate W can be effectively cleaned and protected. Furthermore, before cleaning the outer side and the side of the back side of the substrate W, by cleaning the inner side of the back side of the substrate W, the cleaning liquid that has spread to the upper surface of the substrate W can be kept clean.

[0169] In addition, in reference Fig.16 as well as Fig.17 In the above description, the cleaning liquid inner side supplying step (S112a) is performed after the drying step (S110d), but the present embodiment is not limited thereto. The cleaning liquid inner side supplying step (S112a) may also be performed simultaneously with the drying step (S110d). For example, the cleaning liquid inner side supplying step (S112a) may be performed simultaneously with the drying step (S110d) after the impregnation step (110c), and then the cleaning liquid outer side supplying step (112b) may be performed.

[0170] In addition, in reference Fig.16 as well as Fig.17 In the above description, the cleaning liquid inner side supplying step (S112a) is performed after the drying step (S110d), but the present embodiment is not limited thereto. The cleaning liquid inner side supplying step (S112a) may also be performed before the drying step (S110d). For example, the cleaning liquid inner side supplying step (S112a) may also be performed simultaneously with the impregnation step (110c), and then, after the drying step (S110d), the cleaning liquid outer side supplying step (112b) may be performed.

[0171] Furthermore, in the substrate processing apparatus 100, preferably, after supplying the chemical solution to the substrate W, an inert gas is supplied to the back side of the substrate W. In particular, preferably, the substrate processing apparatus 100 supplies the inert gas to the back side of the substrate W from before supplying the filling material to the substrate W until the end of the process of supplying the cleaning solution.

[0172] Next, refer to Fig.18 A substrate processing apparatus 100 including an inert gas supply unit for supplying an inert gas to the back surface of a substrate W will be described. Fig.18 It is a schematic diagram of a substrate processing apparatus 100 according to this embodiment. Fig.18 The substrate processing apparatus 100 shown in FIG. 1 has the same structure as that of the reference 1 except that it further includes a cover plate 129 and an inert gas supply unit 180 for supplying an inert gas to the back surface of the substrate W. Figure 1 The above-mentioned substrate processing apparatus 100 has the same structure, so in order to avoid redundancy, repeated description is omitted.

[0173] The inert gas supply unit 180 supplies an inert gas to the back surface of the substrate W. For example, the inert gas includes nitrogen gas.

[0174] The inert gas supply unit 180 includes a gas supply port 182, a supply pipe 184, and a valve 186. The inert gas is supplied from the gas supply port 182 toward the back side of the substrate W through the space between the substrate W and the cover plate 129. The gas supply port 182 is provided in an annular shape along the outer periphery of the rotating shaft 122 of the substrate holding unit 120. The supply pipe 184 is coupled to the gas supply port 182. The gas supply port 182 is provided at the top end of the supply pipe 184. The inert gas is supplied from a supply source to the supply pipe 184. The valve 186 is provided in the supply pipe 184. The valve 186 opens and closes the flow path in the supply pipe 184.

[0175] Fig.19 1 is a flow chart for explaining the substrate processing method of this embodiment in which an inert gas is supplied. Fig.19As shown, the inert gas is supplied to the back surface of the substrate W ( S105 : inert gas supplying step) during the period from the start of the chemical liquid processing step ( S106 ) to the end of the cleaning liquid supplying step ( S112 ).

[0176] The inert gas is supplied to the back side of the substrate W in the chemical solution processing step (S106), the organic solvent supplying step (S108), the filling material supplying step (S110), and the cleaning liquid supplying step (S112). In particular, in the filling material supplying step (S110) and the cleaning liquid supplying step (S112), the inert gas is supplied to the back side of the substrate W, so that the filling material can be prevented from being attached to the back side of the substrate W.

[0177] In addition, in reference Fig.19 In the above description, the inert gas is supplied from the start of the chemical liquid treatment step (S106) to the end of the cleaning liquid supply step (S112). During the period from the start of the chemical liquid treatment step (S106) to the end of the cleaning liquid supply step (S112), the flow rate of the inert gas can be constant or can be changed.

[0178] Fig. 20 FIG. 2 is a flow chart for explaining the substrate processing method of the present embodiment in which the flow rate of the inert gas is changed. Fig. 20 As shown, in the chemical solution treatment step ( S106 ) and the organic solvent supply step ( S108 ), the inert gas is supplied at a relatively weak first flow rate ( S105 a : inert gas supply step).

[0179] Then, in the filling material supplying step (S110), the inert gas is set to a second flow rate greater than the first flow rate (S105b: inert gas supplying step). Then, in the cleaning liquid supplying step (S112), the inert gas is set to a third flow rate (S105c: inert gas supplying step). The third flow rate of the inert gas in the cleaning liquid supplying step (S112) may also be greater than the second flow rate of the inert gas in the filling material supplying step (S110).

[0180] The flow rate of the inactive gas in the filling material supplying step (S110) is relatively small compared to the flow rate of the inactive gas in the cleaning liquid supplying step (S112), thereby enabling the filling material to be appropriately supplied to the upper surface of the substrate W. In addition, since the flow rate of the inactive gas in the cleaning liquid supplying step (S112) is relatively large, the attachment of the filling material to the back surface of the substrate W can be suppressed.

[0181] However, the second flow rate of the inert gas in the filling material supplying step ( S110 ) may be equal to the third flow rate of the inert gas in the cleaning liquid supplying step ( S112 ).

[0182] In addition, in reference Figures 7 to 9A as well as Figures 15A to 15C In the above description, the substrate processing apparatus 100 includes the nozzle 162 for spraying the cleaning liquid for cleaning the inner side of the back side of the substrate W and the nozzle 172 for spraying the cleaning liquid for cleaning the outer side and the side of the back side of the substrate W, but the present embodiment is not limited thereto. In the substrate processing apparatus 100, the cleaning liquid sprayed from the nozzle 162 can clean not only the inner side of the substrate W but also the outer side and the side of the substrate W by the nozzle 162 moving relative to the substrate W.

[0183] Next, refer to Fig.21 The substrate processing apparatus 100 in which the nozzle 162 is movable will be described. Fig.21 1 is a schematic diagram of a substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 has the same structure as that of the reference except that the first cleaning liquid supply unit 160 further includes a nozzle moving unit 168 for moving the nozzle 162. Figure 1 The above-mentioned substrate processing apparatus 100 has the same structure, so in order to avoid redundancy, repeated description is omitted.

[0184] The first cleaning liquid supply unit 160 includes a nozzle moving unit 168 in addition to the nozzle 162, the supply pipe 164, and the valve 166. The nozzle moving unit 168 moves the nozzle 162. The nozzle moving unit 168 includes a motor or an air cylinder.

[0185] The nozzle moving unit 168 moves the nozzle 162 in the horizontal direction. The nozzle 162 ejects the cleaning liquid toward the inner side of the back side of the substrate W. In addition, the nozzle 162 ejects the cleaning liquid toward the outer side of the back side of the substrate W after being moved relative to the substrate W by the nozzle moving unit 168.

[0186] The nozzle moving unit 168 may further include a temperature adjusting unit for adjusting the temperature of the cleaning liquid. For example, the nozzle moving unit 168 includes a heater. The temperature of the cleaning liquid ejected from the nozzle 162 can be increased by the heater.

[0187] In addition, refer to Fig.21 In the description, the nozzle moving unit 168 moves one nozzle 162, but the present embodiment is not limited to this. Fig. 6A , Figure 8 to Figure 9C As described above, when there are a plurality of nozzles 162 , preferably, the nozzle moving unit 168 can move the plurality of nozzles 162 independently.

[0188] Next, refer to Fig.16 , Figure 21 to Figure 22D A substrate processing method in the substrate processing apparatus 100 according to the present embodiment will be described. Figures 22A to 22DIt is a schematic diagram for explaining substrate processing in the substrate processing apparatus 100 according to the present embodiment.

[0189] like Fig.22A As shown, the nozzle 152 discharges the filling material toward the substrate W ( S110 a : filling material discharge step). At this time, the substrate holding unit 120 rotates the substrate W at a first rotation speed.

[0190] like Fig. 22B As shown, the substrate holding unit 120 rotates the substrate W at a first rotation speed to determine the film thickness of the filling material (S110b: film thickness determination step), rotates the substrate W at a second rotation speed to infiltrate the filling material (S110c: infiltration step), and then rotates the substrate W at a third rotation speed to dry the substrate W (S110d: drying step). In addition, any one of the film thickness determination step (S110b), the infiltration step (S110c), and the drying step (S110d) may be omitted.

[0191] like Fig. 22C As shown, the nozzle 162 supplies the cleaning liquid to the back side of the substrate W (S112a: cleaning liquid inner side supplying process). At this time, the nozzle moving unit 168 moves the nozzle 162 to the inner side of the back side of the substrate W, and the nozzle 162 sprays the cleaning liquid toward the inner side of the back side of the substrate W. Therefore, the cleaning liquid sprayed from the nozzle 162 is supplied to the inner side of the back side of the substrate W, so as to clean the inner side of the back side of the substrate W. At this time, the substrate holding unit 120 may also rotate the substrate W at the fourth rotation speed.

[0192] like Fig.22D As shown, the nozzle 162 supplies the cleaning liquid to the back side of the substrate W (S112b: cleaning liquid outer side supply process). The nozzle moving unit 168 moves the nozzle 162 from the inner side of the back side of the substrate W toward the outer side, and the nozzle 162 sprays the cleaning liquid toward the back side of the substrate W. Therefore, the cleaning liquid sprayed from the nozzle 162 is supplied to the back side of the substrate W, and the outer side and the side surface are cleaned from the inner side of the back side of the substrate W. At this time, the substrate holding unit 120 may also rotate the substrate W at the fifth rotation speed. In addition, the nozzle moving unit 168 may also move the nozzle 162 to the outer side of the substrate W.

[0193] Above, while referring to Figure 1 to Figure 22DThe embodiments of the present invention are described. However, the present invention is not limited to the above-mentioned embodiments, and can be implemented in various ways without departing from the scope of the main purpose of the present invention. In addition, various inventions can be formed by appropriately combining the multiple structural components disclosed in the above-mentioned embodiments. For example, several structural components can be deleted from all the structural components shown in the embodiments. Moreover, the structural components in different embodiments can also be appropriately combined. For easy understanding, each structural component is schematically shown independently in the accompanying drawings. In order to facilitate the preparation of the drawings, the thickness, length, number, spacing, etc. of each structural component shown in the drawings are sometimes different from the actual ones. In addition, the material, shape, size, etc. of each structural component shown in the above-mentioned embodiment is an example and is not particularly limited. Various changes can be made without substantially departing from the effect of the present invention.

[0194] Industrial Applicability

[0195] The present invention can be applied to a substrate processing device and a substrate processing method for processing a substrate.

Claims

1. A substrate processing device for processing a substrate having an upper surface and a back surface, wherein: The substrate processing device comprises: a substrate holding portion that holds a central portion of the back surface of the substrate and rotates the substrate; a filling material supplying portion for supplying a filling material to the upper surface of the substrate held by the substrate holding portion; a first cleaning liquid supplying unit for supplying cleaning liquid to the back surface of the substrate held by the substrate holding unit; The first cleaning liquid supply unit supplies the cleaning liquid toward a region of the back surface of the substrate held by the substrate holding unit. The first cleaning liquid supply unit is directed toward the substrate in such a manner that a component of the moving direction of the cleaning liquid before reaching the back side of the substrate is projected onto the back side of the substrate in parallel with a predetermined direction. The predetermined direction is directed radially inward of the substrate within a range of 20° or less with respect to a direction perpendicular to a direction from the center of the substrate toward an arrival point of the cleaning liquid.

2. The substrate processing apparatus according to claim 1, wherein: The substrate holding portion is adsorbed onto a central portion of the back surface of the substrate.

3. The substrate processing apparatus according to claim 1 or 2, wherein: The cleaning liquid supplied from the first cleaning liquid supply unit to the back surface of the substrate spreads on the back surface of the substrate and approaches a region of the back surface of the substrate held by the substrate holding unit.

4. The substrate processing apparatus according to claim 1 or 2, wherein: The first cleaning liquid supply unit has at least one nozzle, and the at least one nozzle sprays the cleaning liquid.

5. The substrate processing apparatus according to claim 4, wherein: The at least one nozzle comprises a first nozzle and a second nozzle, A distance from the center of the substrate to a point where the cleaning liquid is ejected onto the substrate by the first nozzle is different from a distance from the center of the substrate to a point where the cleaning liquid is ejected onto the substrate by the second nozzle.

6. The substrate processing apparatus according to claim 5, wherein: The cleaning liquid sprayed from the first nozzle is different from the cleaning liquid sprayed from the second nozzle.

7. The substrate processing apparatus according to claim 4, wherein: The substrate processing apparatus further includes a nozzle moving unit that moves the at least one nozzle in a horizontal direction.

8. The substrate processing apparatus according to claim 1 or 2, wherein: The substrate processing apparatus further includes a second cleaning liquid supply unit configured to supply a cleaning liquid for cleaning a side surface of the substrate.

9. The substrate processing apparatus according to claim 8, wherein: A distance from the center of the substrate to a point where the cleaning liquid is supplied to the substrate by the second cleaning liquid supply unit is longer than a distance from the center of the substrate to a point where the cleaning liquid is supplied to the substrate by the first cleaning liquid supply unit.

10. The substrate processing apparatus according to claim 1 or 2, wherein: The cleaning liquid includes at least one of isopropyl alcohol, propylene glycol monomethyl ether acetate, 1-ethoxy-2-propanol and acetone.

11. The substrate processing apparatus according to claim 1 or 2, wherein: The substrate processing apparatus further includes an inert gas supply unit that supplies an inert gas to the back surface of the substrate.

12. A substrate processing method, comprising processing a substrate having an upper surface and a back surface, wherein: The substrate processing method comprises: a step of rotating the substrate while holding the central portion of the back surface of the substrate; a filling material supplying step of supplying a filling material to the upper surface of the substrate; and After the filling material supplying step, a cleaning liquid supplying step of supplying a cleaning liquid to the back surface of the substrate, The cleaning liquid supplying step includes supplying the cleaning liquid toward a region of the back surface of the substrate where the substrate is held. In the step of supplying the cleaning liquid, the cleaning liquid is supplied in such a manner that a component of the moving direction of the cleaning liquid before reaching the back side of the substrate projected onto the back side of the substrate is parallel to a predetermined direction. The predetermined direction is directed radially inward of the substrate within a range of 20° or less with respect to a direction perpendicular to a direction from the center of the substrate toward an arrival point of the cleaning liquid.

13. The substrate processing method according to claim 12, wherein: In the cleaning liquid supplying step, the cleaning liquid supplied to the rear surface of the substrate spreads on the rear surface of the substrate and approaches a region on the rear surface of the substrate where the substrate is held.

14. The substrate processing method according to claim 12 or 13, wherein: The filling material supplying process comprises: a step of spraying the filling material onto the upper surface of the substrate; After ejecting the filling material, rotating the substrate at a first rotation speed; After rotating the substrate at the first rotation speed, rotating the substrate at a second rotation speed lower than the first rotation speed; A step of rotating the substrate at a third rotation speed higher than the second rotation speed after rotating the substrate at the second rotation speed.

15. The substrate processing method according to claim 14, wherein: The cleaning liquid supply process comprises: a step of supplying the cleaning liquid by a first cleaning liquid supply unit toward a region of the back surface of the substrate where the substrate is held; a step of supplying a cleaning liquid for cleaning the side surface of the substrate by a second cleaning liquid supply unit; a step of rotating the substrate at a fourth rotation speed lower than the third rotation speed while the first cleaning liquid supplier supplies the cleaning liquid; and rotating the substrate at a fifth rotation speed higher than the fourth rotation speed while the second cleaning liquid supplier supplies the cleaning liquid.

16. The substrate processing method according to claim 12 or 13, wherein: The substrate processing method further includes a step of supplying an inert gas to the back surface of the substrate from before the step of supplying the filling material starts to before the step of supplying the cleaning liquid ends.

17. The substrate processing method according to claim 16, wherein: In the step of supplying the inert gas, a flow rate of the inert gas in the step of supplying the filling material is lower than a flow rate of the inert gas in the step of supplying the cleaning liquid.

18. The substrate processing method according to claim 12 or 13, wherein: In the cleaning liquid supplying step, the cleaning liquid is supplied toward a region of the back surface of the substrate where the substrate is held, and then the cleaning liquid for cleaning the side surfaces of the substrate is supplied.

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