Method for producing ultra-thick tungsten plate through tungsten rod upsetting

Abstract

The invention discloses a method for producing an ultra-thick tungsten plate through tungsten rod upsetting. The method for producing the ultra-thick tungsten plate through tungsten rod upsetting comprises the following steps that (1) tungsten powder with the Fisher particle size being 3.0-3.5 microns is selected, and the tungsten powder is pressed into tungsten rods with a cold isostatic pressingmethod; (2) in a sintering device in a hydrogen atmosphere, heating and sintering are conducted on the tungsten rods, and tungsten rod blanks are obtained after natural cooling, wherein the highest temperature of heating and sintering is 2300-2350 DEG C, and the temperature keeping time is 6-12 h; (3) in a hydrogen molybdenum wire furnace in a hydrogen atmosphere, the tungsten rod blanks are heated, wherein the heating temperature is 1550-1580 DEG C, and the heating time is 1.5-2.5 h; (4) upsetting forging is conducted on the tungsten rod blanks on a 750 kg air hammer, and a thick tungsten plate is obtained; (5) the forged thick tungsten plate undergoes stress relief annealing in the hydrogen molybdenum wire furnace; (6) the outline of the tungsten plate is cut through wire-electrode cutting, and the ultra-thick polished tungsten plate is obtained after grinding with a surface grinding machine.

Description

technical field

[0001] The invention belongs to the technical field of preparation of refractory materials, and in particular relates to a method for producing ultra-thick tungsten plates by pierce tungsten rods. Background technique

[0002] Due to its high hardness, high melting point, and high density, tungsten is widely used in contemporary communication technology, electronic computers, aerospace development, medicine and health, photosensitive materials, photoelectric materials, energy materials and catalyst materials. After 2000, with the advancement of Internet technology and communication technology, semiconductor technology developed rapidly, and semiconductor wafer production capacity exploded. The ion implanter is the main equipment for the production of semiconductor wafers, and more than 30% of the parts in the arc reaction chamber of the ion implanter are composed of finished parts of metal tungsten. Therefore, polished tungsten materials of different specific...

Examples

specific Embodiment approach

[0026] It should be noted that the structures, proportions, sizes, etc. shown in this specification are only used to cooperate with the content disclosed in the specification for the understanding and reading of those familiar with this technology, and are not used to limit the conditions for the implementation of the present invention , any modification of structure, change of proportional relationship or adjustment of size shall still fall within the scope covered by the technical content disclosed in the present invention without affecting the effect and purpose of the present invention. .

[0027] At the same time, terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description and are not used to limit this specification. The practicable scope of the invention and the change or adjustment of its relative relationship shall also be regarded as the practicable scope of the present invention without...

Embodiment 1

[0029] The invention discloses a method for thickly producing ultra-thick tungsten plates with tungsten rod pier, which comprises the following steps:

[0030] Step 1) Select tungsten powder with a Fischer particle size of 3.0-3.5 μm, and press the tungsten powder into a tungsten rod by cold isostatic pressing;

[0031] Step 2) In the sintering equipment under a hydrogen atmosphere, heat and sinter the tungsten rod described in step 1), and obtain a tungsten rod billet after natural cooling. 6 ~ 12h;

[0032] Step 3) heating the tungsten billet described in step 2) in a hydrogen molybdenum wire furnace under a hydrogen atmosphere, wherein the heating temperature is 1550°C-1580°C, and the heating time is 1.5h-2.5h;

[0033] Step 4) Carry out pier rough forging on the heated tungsten billet described in step 3) on a 750kg air hammer to obtain a thick tungsten plate;

[0034] Step 5) performing stress relief annealing on the forged thick tungsten plate described in step 4) in a...

Embodiment 2

[0037] The invention discloses a method for thickly producing ultra-thick tungsten plates with tungsten rod pier, which comprises the following steps:

[0038] Step 1) Select tungsten powder with a Fischer particle size of 3.0-3.5 μm, and press the tungsten powder into a tungsten rod by cold isostatic pressing;

[0039] Step 2) In the sintering equipment under a hydrogen atmosphere, heat and sinter the tungsten rod described in step 1), and obtain a tungsten rod billet after natural cooling. 6 ~ 12h;

[0040] Step 3) Under a hydrogen atmosphere, heat the tungsten billet described in step 2), wherein the heating temperature is 1550°C-1580°C, and the heating time is 1.5h-2.5h;

[0041] Step 4) Carry out pier rough forging on the heated tungsten billet described in step 3) on a 750kg air hammer to obtain a thick tungsten plate;

[0042] Step 5) performing stress relief annealing on the forged thick tungsten plate described in step 4) in a hydrogen molybdenum wire furnace, and r...

technical field

[0001] The invention belongs to the technical field of preparation of refractory materials, and in particular relates to a method for producing ultra-thick tungsten plates by pierce tungsten rods. Background technique

[0002] Due to its high hardness, high melting point, and high density, tungsten is widely used in contemporary communication technology, electronic computers, aerospace development, medicine and health, photosensitive materials, photoelectric materials, energy materials and catalyst materials. After 2000, with the advancement of Internet technology and communication technology, semiconductor technology developed rapidly, and semiconductor wafer production capacity exploded. The ion implanter is the main equipment for the production of semiconductor wafers, and more than 30% of the parts in the arc reaction chamber of the ion implanter are composed of finished parts of metal tungsten. Therefore, polished tungsten materials of different specific...

Examples

specific Embodiment approach

[0026] It should be noted that the structures, proportions, sizes, etc. shown in this specification are only used to cooperate with the content disclosed in the specification for the understanding and reading of those familiar with this technology, and are not used to limit the conditions for the implementation of the present invention , any modification of structure, change of proportional relationship or adjustment of size shall still fall within the scope covered by the technical content disclosed in the present invention without affecting the effect and purpose of the present invention. .

[0027] At the same time, terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description and are not used to limit this specification. The practicable scope of the invention and the change or adjustment of its relative relationship shall also be regarded as the practicable scope of the present invention without...

Embodiment 1

[0029] The invention discloses a method for thickly producing ultra-thick tungsten plates with tungsten rod pier, which comprises the following steps:

[0030] Step 1) Select tungsten powder with a Fischer particle size of 3.0-3.5 μm, and press the tungsten powder into a tungsten rod by cold isostatic pressing;

[0031] Step 2) In the sintering equipment under a hydrogen atmosphere, heat and sinter the tungsten rod described in step 1), and obtain a tungsten rod billet after natural cooling. 6 ~ 12h;

[0032] Step 3) heating the tungsten billet described in step 2) in a hydrogen molybdenum wire furnace under a hydrogen atmosphere, wherein the heating temperature is 1550°C-1580°C, and the heating time is 1.5h-2.5h;

[0033] Step 4) Carry out pier rough forging on the heated tungsten billet described in step 3) on a 750kg air hammer to obtain a thick tungsten plate;

[0034] Step 5) performing stress relief annealing on the forged thick tungsten plate described in step 4) in a...

Embodiment 2

[0037] The invention discloses a method for thickly producing ultra-thick tungsten plates with tungsten rod pier, which comprises the following steps:

[0038] Step 1) Select tungsten powder with a Fischer particle size of 3.0-3.5 μm, and press the tungsten powder into a tungsten rod by cold isostatic pressing;

[0039] Step 2) In the sintering equipment under a hydrogen atmosphere, heat and sinter the tungsten rod described in step 1), and obtain a tungsten rod billet after natural cooling. 6 ~ 12h;

[0040] Step 3) Under a hydrogen atmosphere, heat the tungsten billet described in step 2), wherein the heating temperature is 1550°C-1580°C, and the heating time is 1.5h-2.5h;

[0041] Step 4) Carry out pier rough forging on the heated tungsten billet described in step 3) on a 750kg air hammer to obtain a thick tungsten plate;

[0042] Step 5) performing stress relief annealing on the forged thick tungsten plate described in step 4) in a hydrogen molybdenum wire furnace, and r...