Substrate support and plasma processing device

Abstract

The present invention relates to a substrate support and a plasma processing device. The substrate support of the illustrated embodiment includes a first support area for supporting a substrate and a second support area for supporting a focusing ring. The second support area extends in the circumferential direction. The second support area includes a lower electrode, a holding area, and a bonding area. The holding area includes a first electrode and a second electrode. The first electrode and the second electrode extend in the circumferential direction. The first electrode is arranged on the inner side of the second electrode. The first wire and the second wire respectively connected to the first electrode and the second electrode extend in the bonding area near or on the central part between the inner boundary and the outer boundary of the second support area. The present invention seeks to ensure a larger distance between the first wire and the second wire, which are respectively connected to the first electrode and the second electrode of the holding area for holding the focusing ring, and the plasma space.

Description

Technical Field

[0001] Illustrative embodiments of the present invention relate to a substrate support and a plasma processing apparatus. Background Art

[0002] A plasma processing device is used in the manufacture of electronic devices. Patent document 1 describes a plasma processing device. The plasma processing device described in patent document 1 includes a lower electrode and an electrostatic holder. The electrostatic holder is arranged on the lower electrode. The electrostatic holder is configured to hold a focusing ring. The electrostatic holder has two electrodes forming a bipolar structure. The two electrodes extend in the circumferential direction. One of the two electrodes extends radially inward relative to the other of the two electrodes. The two electrodes are connected to two wires. A voltage is applied to the two electrodes via the two wires. The two wires are hidden in the chamber of the plasma processing device so as not to be exposed to the plasma.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-122740 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] It is desired to ensure a large distance between the first lead and the second lead, which are respectively connected to the first electrode and the second electrode of the holding region for holding the focus ring, and the plasma space.

[0008] Technical solutions for solving technical problems

[0009] In an exemplary embodiment, a substrate support for a plasma processing apparatus is provided. The substrate support includes a first support region and a second support region. The first support region is configured to support a substrate placed thereon. The second support region is configured to support a focus ring placed thereon. The second support region extends circumferentially on the radially outer side of the first support region. The second support region includes a lower electrode, a holding region, and a bonding region. The holding region is disposed above the lower electrode and extends circumferentially. The bonding region is insulating and is disposed between the holding region and the lower electrode to bond the holding region to the lower electrode. The holding region includes a first electrode and a second electrode. The holding region is configured to hold the focus ring with a potential difference set between the first electrode and the second electrode. The first electrode and the second electrode extend circumferentially. The first electrode is disposed radially inwardly relative to the second electrode. The substrate support also includes a first wire and a second wire. The first wire is connected to the first electrode via the bonding region. The second wire is connected to the second electrode via the bonding region. The first conductive wire and the second conductive wire extend in the bonding region near or on a center portion between the inner boundary and the outer boundary of the second supporting region relative to the inner boundary and the outer boundary.

[0010] Effects of the Invention

[0011] According to an exemplary embodiment, a large distance can be ensured between each of a first wire and a second wire connected to a first electrode and a second electrode of a holding region for holding a focus ring and a plasma space. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment.

[0013] Figure 2 is a cross-sectional view of a substrate support according to an exemplary embodiment.

[0014] Figure 3 is an enlarged partial cross-sectional view of a substrate support according to an exemplary embodiment.

[0015] Figure 4 The diagram schematically shows the layout of the first electrode and the second electrode in the holding region for the focus ring of the substrate support according to an exemplary embodiment.

[0016] Figure 5 (a) and Figure 5 (b) is a partially enlarged cross-sectional view of a substrate support according to an exemplary embodiment.

[0017] Figure 6FIG. 1 is a diagram schematically showing the layout of first electrodes and second electrodes in a holding region of a substrate support according to another exemplary embodiment.

[0018] Figure 7 FIG. 1 is a diagram schematically showing the layout of first electrodes and second electrodes in a holding region of a substrate support according to another exemplary embodiment.

[0019] Description of Reference Numerals

[0020] 16...substrate support, 16...substrate support, 161...first supporting region, 162...second supporting region, 162a...inner boundary, 162b...outer boundary, 162c...central portion, 18...lower electrode, 22...holding region, 23...joining region, 221...first electrode, 222...second electrode, 81...first wire, 82...second wire. DETAILED DESCRIPTION

[0021] Various exemplary embodiments are described below.

[0022] In an exemplary embodiment, a substrate support for a plasma processing apparatus is provided. The substrate support includes a first support region and a second support region. The first support region is configured to support a substrate placed thereon. The second support region is configured to support a focus ring placed thereon. The second support region extends circumferentially on the radially outer side of the first support region. The second support region includes a lower electrode, a holding region, and a bonding region. The holding region is disposed above the lower electrode and extends circumferentially. The bonding region is insulating and is disposed between the holding region and the lower electrode to bond the holding region to the lower electrode. The holding region includes a first electrode and a second electrode. The holding region is configured to hold the focus ring with a potential difference set between the first electrode and the second electrode. The first electrode and the second electrode extend circumferentially. The first electrode is disposed radially inwardly relative to the second electrode. The substrate support also includes a first wire and a second wire. The first wire is connected to the first electrode via the bonding region. The second wire is connected to the second electrode via the bonding region. The first conductive wire and the second conductive wire extend in the bonding region near or on a center portion between the inner boundary and the outer boundary of the second supporting region relative to the inner boundary and the outer boundary.

[0023] In the above embodiment, the first and second wires are arranged in the bonding region at a large distance from the inner and outer boundaries of the second support region, respectively. Therefore, a large distance can be ensured between the first and second wires and the plasma space.

[0024] In an exemplary embodiment, the first conductive wire and the second conductive wire may extend on a central portion within the bonding region.

[0025] In an exemplary embodiment, the first electrode may have a first protrusion that expands the first electrode outward relative to the central portion. The second electrode may have a recess formed in the shape of the first protrusion. The first wire may be connected to the first protrusion and extend downward from the first protrusion. The second electrode may have a second protrusion that expands the second electrode inward relative to the central portion. The first electrode may have a recess formed in the shape of the second protrusion. The second wire may be connected to the second protrusion and extend downward from the second protrusion.

[0026] In an exemplary embodiment, the outer edge of the first electrode and the inner edge of the second electrode may be formed in a corrugated shape.

[0027] In an exemplary embodiment, the substrate support device may further include another holding region separate from the holding region. The other holding region is provided in the first supporting region and is configured to be able to hold the substrate placed thereon.

[0028] In an exemplary embodiment, the substrate support may include an electrostatic holder including a holding region. The electrostatic holder includes another holding region configured to hold the substrate placed thereon in the first supporting region.

[0029] In an exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support and a high-frequency power supply. The substrate support is any one of the substrate supports of the various embodiments described above. The substrate support is configured to support a substrate and a focus ring in the chamber. The high-frequency power supply is electrically connected to a lower electrode of the substrate support.

[0030] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings, wherein the same reference numerals are given to the same or corresponding parts in each of the drawings.

[0031] Figure 1 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment. Figure 1The plasma processing device 1 shown is a capacitively coupled plasma processing device. The plasma processing device 1 has a chamber 10. The chamber 10 forms an internal space 10s therein. In one embodiment, the chamber 10 includes a chamber body 12. The chamber body 12 has a substantially cylindrical shape. The internal space 10s is formed in the chamber body 12. The chamber body 12 is made of, for example, aluminum. The chamber body 12 is electrically grounded. A plasma-resistant film is formed on the inner wall surface of the chamber body 12, i.e., the wall surface forming the internal space 10s. The film may be a ceramic film such as a film formed by anodizing or a film formed of yttrium oxide.

[0032] A passage 12p is formed in the side wall of the chamber body 12. When the substrate W is transported between the internal space 10s and the outside of the chamber 10, the substrate W passes through the passage 12p. A gate valve 12g is provided along the side wall of the chamber body 12 to open and close the passage 12p.

[0033] A substrate support 16 is provided in the chamber 10. The substrate support 16 is configured to support a substrate W placed thereon. The substrate W has a substantially disc shape. The substrate support 16 has a lower electrode 18 and a holding region 20 for the substrate. The lower electrode 18 is formed of a conductor such as aluminum and has a substantially disc shape. The holding region 20 is provided on the lower electrode 18. The holding region 20 is configured to hold the substrate W by utilizing the electrostatic attraction generated between the substrate W placed thereon and the holding region 20. The details of the substrate support 16 will be described later.

[0034] The plasma processing apparatus 1 may further include an upper electrode 30. The upper electrode 30 is disposed above the substrate support 16. The upper electrode 30 closes the upper opening of the chamber body 12 together with an insulating member 32. The upper electrode 30 is supported on the upper portion of the chamber body 12 via the insulating member 32.

[0035] The upper electrode 30 includes a top plate 34 and a support body 36. The lower surface of the top plate 34 forms an internal space 10s. A plurality of gas exhaust holes 34a are formed in the top plate 34. Each of the plurality of gas exhaust holes 34a penetrates the top plate 34 in the plate thickness direction (vertical direction). The top plate 34 is not a particularly limited member, and is formed, for example, of silicon. Alternatively, the top plate 34 may have a structure in which a plasma-resistant film is provided on the surface of an aluminum member. The film may be a ceramic film such as a film formed by anodizing or a film formed of yttrium oxide.

[0036] The support body 36 supports the top plate 34 in a detachable manner. The support body 36 is formed of a conductive material such as aluminum. A gas diffusion chamber 36a is provided inside the support body 36. A plurality of gas holes 36b extend downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are respectively connected to the plurality of gas exhaust holes 34a. A gas introduction port 36c is formed in the support body 36. The gas introduction port 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas introduction port 36c.

[0037] The gas source group 40 is connected to the gas supply pipe 38 via the valve group 41, the flow controller group 42 and the valve group 43. The gas source group 40, the valve group 41, the flow controller group 42 and the valve group 43 constitute a gas supply unit. The gas source group 40 includes a plurality of gas sources. The valve group 41 and the valve group 43 each include a plurality of valves (e.g., on-off valves). The flow controller group 42 includes a plurality of flow controllers. The plurality of flow controllers of the flow controller group 42 are each a mass flow controller or a pressure-controlled flow controller. The plurality of gas sources of the gas source group 40 are each connected to the gas supply pipe 38 via a valve corresponding to the valve group 41, a flow controller corresponding to the flow controller group 42 and a valve corresponding to the valve group 43. The plasma processing device 1 is capable of supplying the gas of one or more gas sources selected from the plurality of gas sources of the gas source group 40 to the internal space 10s at an independently regulated flow rate.

[0038] A baffle 48 is provided between a cylindrical portion 97 (described later) of the substrate support 16 and a side wall of the chamber body 12. The baffle 48 can be formed, for example, by covering a ceramic such as yttrium oxide on an aluminum material. A plurality of through holes are formed in the baffle 48. Below the baffle 48, an exhaust pipe 52 is connected to the bottom of the chamber body 12. An exhaust device 50 is connected to the exhaust pipe 52. The exhaust device 50 has a pressure controller such as an automatic pressure control valve and a vacuum pump such as a turbomolecular pump, and can reduce the pressure of the internal space 10s.

[0039] The plasma processing device 1 also has one or more high-frequency power supplies. In one embodiment, the plasma processing device 1 also has a high-frequency power supply 61. The high-frequency power supply 61 is a power supply that generates high-frequency power HF for plasma generation. The high-frequency power HF has a frequency in the range of 27 to 100 MHz, for example, 40 MHz or 60 MHz. In order to supply the high-frequency power HF to the lower electrode 18, the high-frequency power supply 61 is connected to the lower electrode 18 via a matcher 63. The matcher 63 has a matching circuit for matching the output impedance of the high-frequency power supply 61 with the impedance of the load side (lower electrode 18 side). In addition, the high-frequency power supply 61 may not be electrically connected to the lower electrode 18, but may be connected to the upper electrode 30 via the matcher 63.

[0040] In one embodiment, the plasma processing apparatus 1 further includes a high-frequency power supply 62. The high-frequency power supply 62 is a power supply that generates a bias high-frequency power, i.e., a high-frequency power LF, for introducing ions into the substrate W. The frequency of the high-frequency power LF is lower than the frequency of the high-frequency power HF. The frequency of the high-frequency power LF is a frequency in the range of 400kHz to 13.56MHz, for example, 400kHz. In order to supply the high-frequency power LF to the lower electrode 18, the high-frequency power supply 62 is connected to the lower electrode 18 via a matcher 64. The matcher 64 has a matching circuit for matching the output impedance of the high-frequency power supply 62 with the impedance of the load side (lower electrode 18 side).

[0041] In the plasma processing device 1, gas is supplied to the internal space 10s. Then, by supplying high-frequency power HF and / or high-frequency power LF, the gas is excited in the internal space 10s. As a result, plasma can be generated in the internal space 10s. The substrate W is processed by chemical species such as ions and / or free radicals from the generated plasma.

[0042] The plasma processing apparatus 1 further includes a control unit MC. The control unit MC is a computer including a processor, a storage device, an input device, a display device, etc., and can control each unit of the plasma processing apparatus 1. Specifically, the control unit MC executes a control program stored in the storage device, and controls each unit of the plasma processing apparatus 1 based on the recipe data stored in the storage device. Through the control performed by the control unit MC, the processing specified by the recipe data can be implemented in the plasma processing apparatus 1.

[0043] Below, refer to Figure 1 as well as Figure 2 and Figure 3 , the substrate support 16 is described in detail. Figure 2 is a cross-sectional view of a substrate support according to an exemplary embodiment. Figure 3 1 is a partially enlarged cross-sectional view of a substrate support according to an exemplary embodiment. As described above, the substrate support 16 has the lower electrode 18 and the holding area 20.

[0044] A flow path 18f is formed in the lower electrode 18. The flow path 18f is a flow path for a heat exchange medium. As the heat exchange medium, a liquid refrigerant or a refrigerant (for example, Freon) that cools the lower electrode 18 by gasification can be used. The flow path 18f is connected to a supply device 70 (for example, a cooling unit) for the heat exchange medium. The heat exchange medium is supplied to the flow path 18f from the supply device 70 via a pipe. The heat exchange medium supplied to the flow path 18f is returned to the supply device 70 via other pipes.

[0045] The substrate support 16 has a first support region 161 and a second support region 162. The first support region 161 is configured to support a substrate W placed thereon. The first support region 161 is composed of a lower electrode 18 and a holding region 20. That is, the first support region 161 includes a portion of the lower electrode 18 and the holding region 20. The axis AX, which is the central axis of the first support region 161, is an axis extending in the vertical direction. The first support region 161 is substantially circular when viewed from above.

[0046] The holding region 20 is provided on the lower electrode 18. The holding region 20 has a substantially disk shape. The holding region 20 is bonded to the upper surface of the lower electrode 18 via a bonding region 21. The bonding region 21 is formed of, for example, a bonding agent.

[0047] The holding area 20 has a main body 20m and an electrode 20e. The main body 20m has a substantially disk shape. The main body 20m is formed of a dielectric such as aluminum nitride. The electrode 20e is a film-shaped electrode. The electrode 20e is disposed in the main body 20m. The electrode 20e is electrically connected to the DC power supply 53 via a wire 54. The electrode 20e is electrically connected to the DC power supply 53 via a wire 54 and a switch 55.

[0048] The substrate W is placed on the upper surface of the holding area 20. When a voltage from the DC power supply 53 is applied to the electrode 20e, an electrostatic attraction is generated between the substrate W and the holding area 20. The holding area 20 can hold the substrate W by the generated electrostatic attraction.

[0049] In one embodiment, the plasma processing apparatus 1 may have a heat-conducting gas supply system. The heat-conducting gas supply system is configured to supply a heat-conducting gas, such as He gas, between the substrate W and the holding area 20. In one embodiment, the heat-conducting gas supply system has a gas source 72 of the heat-conducting gas. The gas source 72 is connected to a gas passage 73. A gas passage 74 is branched from the gas passage 73. The gas passage 74 extends to supply the heat-conducting gas from the gas source 72 between the substrate W and the holding area 20.

[0050] The second support region 162 is configured to support the focus ring FR placed thereon. The second support region 162 extends radially outside the first support region 161 with respect to the axis AX. The second support region 162 extends circumferentially around the axis AX. The second support region 162 is annular in a plan view.

[0051] The second support region 162 is composed of the lower electrode 18, the holding region 22 for the focus ring, and the bonding region 23. That is, the second support region 162 includes another part of the lower electrode 18, that is, the peripheral portion of the lower electrode 18, the holding region 22, and the bonding region 23. The holding region 22 is provided above the peripheral portion of the lower electrode 18. The holding region 22 extends in the circumferential direction so as to surround the holding region 20. The bonding region 23 has insulating properties and is provided between the holding region 22 and the lower electrode 18. In one example, the bonding region 23 is a bonding agent that bonds the holding region 22 to the upper surface of the lower electrode 18.

[0052] Below, refer to Figure 1 to Figure 3 as well as Figure 4 , Figure 5 (a) and Figure 5 (b). Figure 4 This is a diagram schematically showing the layout of the first electrode and the second electrode in the holding region for the focus ring of a substrate support according to an exemplary embodiment. Figure 5 (a) and Figure 5 (b) are each a partially enlarged cross-sectional view of a substrate support according to an exemplary embodiment. Figure 5 (a) shows an enlarged view of a portion of the substrate support including a connection portion between the first electrode and the first wire. Figure 5 (b) shows an enlarged view of a portion of the substrate support including a connection portion between the second electrode and the second wire.

[0053] The holding area 22 is configured to hold the focus ring FR placed thereon. The focus ring FR includes a conductive material. The focus ring FR is formed of, for example, silicon or silicon carbide. The focus ring FR has a ring shape when viewed from above. In the plasma processing apparatus 1, the substrate W is disposed on the holding area 20 and in an area surrounded by the focus ring FR.

[0054] The holding region 22 has a main body 22m, a first electrode 221, and a second electrode 222. The main body 22m is plate-shaped and has an annular bump defined by an inner edge and an outer edge. The main body 22m is formed of a dielectric such as aluminum nitride. In addition, the inner edge and the outer edge of the main body 22m are the inner edge and the outer edge of the holding region 22. The inner side boundary 162a of the second supporting region 162 has a cylindrical shape including the inner edge of the holding region 22. The outer side boundary 162b of the second supporting region 162 has a cylindrical shape including the outer edge of the holding region 22.

[0055] The first electrode 221 and the second electrode 222 are film-shaped electrodes. The first electrode 221 and the second electrode 222 are arranged in the main body 22m. The first electrode 221 and the second electrode 222 extend in the circumferential direction around the axis AX. The first electrode 221 extends inside the second electrode 222. The first electrode 221 and the second electrode 222 are spaced apart from each other. The first electrode 221 and the second electrode 222 may have the same or substantially the same area as each other. When the first electrode 221 and the second electrode 222 have the same or substantially the same area as each other, the electrostatic attraction can be maximized.

[0056] The substrate support 16 further includes a first conductive wire 81 and a second conductive wire 82. The first conductive wire 81 electrically connects the first electrode 221 to a DC power source 83. The first electrode 221 is electrically connected to the DC power source 83 via the first conductive wire 81 and a switch 85. The second conductive wire 82 electrically connects the second electrode 222 to a DC power source 84. The second electrode 222 is electrically connected to the DC power source 84 via the second conductive wire 82 and a switch 86.

[0057] The focus ring FR is placed on the upper surface of the holding area 22. When voltages are applied to the first electrode 221 and the second electrode 222 from the DC power supply 83 and the DC power supply 84 so that a potential difference is generated between the first electrode 221 and the second electrode 222, an electrostatic attraction is generated. The holding area 22 can hold the focus ring FR by utilizing the generated electrostatic attraction.

[0058] In one embodiment, the heat transfer gas supply system is further configured to supply heat transfer gas between the focus ring FR and the holding area 22. A gas passage 75 is further branched from the gas passage 73. The gas passage 75 extends to supply the heat transfer gas from the gas source 72 between the focus ring FR and the holding area 22. The gas passage 75 partially extends through the second support area 162. In this embodiment, the heat transfer gas is used to promote heat exchange between the second support area 162 (i.e., the holding area 22) and the focus ring FR.

[0059] like Figure 5 As shown in (a), the first wire 81 is connected to the first electrode 221 through the bonding region 23. Figure 5 As shown in (b), the second wire 82 is connected to the second electrode 222 through the bonding area 23. The first wire 81 and the second wire 82 extend in the vertical direction in the bonding area 23. In addition, the first wire 81 and the second wire 82 may each extend through the lower electrode 18. The first wire 81 and the second wire 82 may each be electrically isolated from the lower electrode 18 in the lower electrode 18. The first wire 81 and the second wire 82 may each be surrounded by an insulator in the lower electrode 18.

[0060] The first conductive wire 81 and the second conductive wire 82 extend in the bonding area 23 near the central portion 162c closer to the inner boundary 162a and the outer boundary 162b of the second support area 162. The first conductive wire 81 and the second conductive wire 82 may also extend on the central portion 162c. The central portion 162c is a portion located in the center between the inner boundary 162a and the outer boundary 162b of the second support area 162. That is, the central portion 162c is a portion that is equidistant from the inner boundary 162a and the outer boundary 162b in the radial direction. Therefore, the central portion 162c has a cylindrical shape.

[0061] In the plasma processing apparatus 1, the first conductive wire 81 and the second conductive wire 82 are arranged so as to have a large distance from the inner boundary 162a and the outer boundary 162b of the second support region 162 in the bonding region 23. Therefore, a large distance can be ensured between the first conductive wire 81 and the second conductive wire 82 and the plasma space. That is, a large distance can be ensured between the first conductive wire 81 and the inner edge of the bonding region 23 and between the first conductive wire 81 and the outer edge of the bonding region 23. In addition, a large distance can be ensured between the second conductive wire 82 and the inner edge of the bonding region 23 and between the second conductive wire 82 and the outer edge of the bonding region 23.

[0062] In one embodiment, as described above, the first wire 81 and the second wire 82 may each extend on the central portion 162c in the bonding region 23. According to this embodiment, the distance between each of the first wire 81 and the second wire 82 and the plasma space becomes maximum.

[0063] In one embodiment, the first electrode 221 may include a first protrusion 221p. Figure 4 As shown in the figure, the first electrode 221 extends outward relative to the central portion 162c in a manner that the first electrode 221 expands outward relative to the central portion 162c. In this embodiment, the second electrode 222 has a second recess 222r formed in the shape of the first protrusion 221p. The first wire 81 is connected to the first protrusion 221p. The first wire 81 extends downward from the first protrusion 221p. That is, the first protrusion 221p is a contact portion between the first electrode 221 and the first wire 81.

[0064] In one embodiment, the second electrode 222 may include a second protrusion 222p. Figure 4As shown in FIG. 1 , the second electrode 222 extends inwardly relative to the central portion 162c in such a manner that the second electrode 222 expands inwardly relative to the central portion 162c. The first electrode 221 has a first recess 221r ​​formed in the shape of the second protrusion 222p. The second wire 82 is connected to the second protrusion 222p. The second wire 82 extends downward from the second protrusion 222p. That is, the second protrusion 222p is a contact portion between the second electrode 222 and the second wire 82.

[0065] like Figure 4 As shown, the first electrode 221 is formed by alternately providing a plurality of protrusions including first protrusions 221p and a plurality of recesses including first recesses 221r ​​in the circumferential direction. In addition, the second electrode 222 is formed by alternately providing a plurality of protrusions including second protrusions 222p and a plurality of recesses including second recesses 222r in the circumferential direction.

[0066] Below, refer to Figure 6 and Figure 7 . Figure 6 and Figure 7 FIG. 1 is a diagram schematically showing the layout of the first electrode and the second electrode in the holding region of the substrate support according to another exemplary embodiment. Figure 6 and Figure 7 As shown in FIG. 2 , the outer edge of the first electrode 221 and the inner edge of the second electrode 222 may be formed in a wave shape. Figure 6 and Figure 7 In each embodiment shown, the outer edge of the first electrode 221 extends alternately outward and inward relative to the central portion 162c along the circumferential direction. The inner edge of the second electrode 222 extends alternately outward and inward relative to the central portion 162c along the circumferential direction and extends along the outer edge of the first electrode 221. Figure 6 and Figure 7 As shown, the outer edge of the first electrode 221 and the inner edge of the second electrode 222 may be in a curved line shape or a zigzag line shape.

[0067] Figure 1 to Figure 7 The holding area 22 is shown as being separate from the holding area 20. However, the substrate support 16 may also include a single electrostatic holding member that integrates the holding area 20 and the holding area 22. That is, the holding area 20 and the holding area 22 may also be formed as one body.

[0068] Refer again Figure 1 to Figure 3 In one embodiment, the plasma processing apparatus 1 is configured to apply a voltage to the focus ring FR. When a voltage of negative polarity is applied to the focus ring FR, the upper end position of the sheath on the focus ring FR can be adjusted. The substrate support 16 further includes a conductive structure 24 and a retaining member 25. The conductive structure 24 is configured to be electrically connected to the focus ring FR. The conductive structure 24 includes a conductive path 26 and a connecting member 27.

[0069] The conductive path 26 provides a terminal region 26t radially outwardly relative to the second support region 162. The conductive path 26 extends downwardly from the terminal region 26t. The conductive path 26 is formed by one or more conductors. In one embodiment, the plasma processing device 1 may further include an insulating region. The insulating region extends radially outwardly of the second support region 162 and below the lower electrode 18. The conductive path 26 extends in the insulating region.

[0070] In one embodiment, the insulating region is composed of a plurality of insulating parts 91 to 96. In addition, the number of insulating parts constituting the insulating region is an arbitrary number. The plurality of insulating parts 91 to 96 are formed of quartz or alumina. The insulating part 91 has a substantially cylindrical shape. The insulating part 91 extends upward from the bottom of the chamber 10. The insulating parts 92 and 93 each have a substantially disc shape. The diameter of the insulating part 93 is larger than the diameter of the insulating part 92. The insulating part 93 is disposed on the insulating part 92. The lower electrode 18 is disposed on the insulating part 93.

[0071] The insulating member 94 has a substantially annular shape. The insulating member 94 is arranged on the peripheral portion of the insulating member 92. The insulating member 94 is arranged radially outside the insulating member 93. The insulating member 94 extends circumferentially along the outer peripheral surface of the insulating member 93. The insulating member 95 has a substantially cylindrical shape. The insulating member 95 has an outer diameter smaller than the outer diameter of the insulating member 94. The insulating member 95 is arranged on the insulating member 94. The insulating member 95 extends along the outer peripheral surface of the lower electrode 18 and the outer edge of the holding region 22.

[0072] The cylindrical portion 97 extends upward from the bottom of the chamber 10. The cylindrical portion 97 has a substantially cylindrical shape. The cylindrical portion 97 extends along the outer peripheral surface of the insulating member 91. The cylindrical portion 97 is formed of a metal such as aluminum. The cylindrical portion 97 is grounded in the same manner as the chamber 10. The insulating member 96 has a substantially cylindrical shape. The insulating member 96 is disposed on the cylindrical portion 97. The insulating member 96 extends along the outer peripheral surface of the insulating member 92, the outer peripheral surface of the insulating member 94, the outer peripheral surface of the retainer 25, and the outer peripheral surface of the focus ring FR.

[0073] In one embodiment, the conductive path 26 provides a terminal area 26t on the insulating member 94. The conductive path 26 extends downward through the insulating member 94 and the insulating member 92. The conductive path 26 is electrically connected to the power supply 99 via the low-pass filter 98. The low-pass filter 98 is configured to attenuate or cut off the high frequency flowing into the power supply 99. The power supply 99 is configured to generate a DC voltage or a high-frequency voltage applied to the focus ring FR. The voltage applied from the power supply 99 to the focus ring FR may be a negative voltage.

[0074] The connection member 27 is disposed on the terminal region 26t of the conductive path 26. The connection member 27 electrically connects the focus ring FR and the terminal region 26t. The connection member 27 is disposed on the terminal region 26t, and faces the surface FRS of the focus ring FR. The surface FRS extends radially outward relative to the connection member 27 and faces radially inward.

[0075] In one embodiment, the focus ring FR may include a first annular portion FR1 and a second annular portion FR2. The first annular portion FR1 is annular and plate-shaped, and is disposed on the second support region 162 (i.e., on the holding region 22). In the plasma processing apparatus 1, the substrate W is disposed in an area surrounded by the first annular portion FR1. The second annular portion FR2 provides a surface FRS. The second annular portion FR2 extends downward from the outer periphery of the first annular portion FR1 in a manner opposite to the connecting member 27.

[0076] The holder 25 holds the connection member 27 in such a manner that the connection member 27 is pressed downward and the connection member 27 is pressed against the surface FRS of the focus ring FR. In the substrate support 16, the connection member 27 is pressed downward by the holder 25, so that reliable electrical connection between the connection member 27 and the terminal region 26t can be achieved. In addition, the connection member 27, while being held by the holder 25, presses the surface FRS of the focus ring FR arranged radially outside the connection member 27. Therefore, reliable electrical connection between the connection member 27 and the focus ring FR can be achieved. In addition, the direction in which the connection member 27 presses the surface FRS of the focus ring FR is a direction that is substantially orthogonal to the direction in which the electrostatic attraction generated between the holding region 22 and the focus ring FR acts. Therefore, an electrical path connected to the focus ring FR can be provided while suppressing the generation of a force opposing the electrostatic attraction holding the focus ring FR. With this substrate support 16, the focus ring FR can be stably held in the second support region 162. Furthermore, even when the heat transfer gas is supplied between the focus ring FR and the holding area 22, the focus ring FR can be stably held in the second support area 162. Therefore, the pressure of the heat transfer gas supplied between the focus ring FR and the holding area 22 can be increased. Therefore, the efficiency of the temperature control of the focus ring FR can be improved. Furthermore, when the focus ring FR is stably held in the holding area 22, the electrical path can be connected to the lower surface of the focus ring FR instead of using the conductive structure 24.

[0077] In one embodiment, the connecting member 27 may include a first portion 271 and a second portion 272. The first portion 271 is opposite to the surface FRS of the focus ring FR. The second portion 272 is continuous with the lower portion of the first portion 271. The second portion 272 extends radially outward from the lower portion of the first portion 271. In this embodiment, the cross-sectional shape of the connecting member 27 is an L-shape.

[0078] The retaining member 25 retains the connecting member 27 in such a manner that the second portion 272 is pressed downward. In one embodiment, the retaining member 25 is disposed on the insulating member 94. The retaining member 25 is fixed to the insulating member 94 by bolts 28. In one embodiment, the retaining member 25 has a main portion 251 and a protrusion 252. The main portion 251 has a substantially cylindrical shape. The main portion 251 is disposed on the insulating member 94. The protrusion 252 protrudes radially inward from the upper end of the main portion 251. The protrusion 252 is disposed on the second portion 272 of the connecting member 27. When the retaining member 25 is fixed, the second portion 272 of the connecting member 27 is pressed downward, and the first portion 271 applies a force radially outward. As a result, the connecting member 27 and the focusing ring FR can be reliably contacted with each other.

[0079] In one embodiment, the substrate support 16 may further include a conductive component 58. The conductive component 58 has conductivity and elasticity. The conductive component 58 may be, for example, a spiral member, a spring, or a washer formed of a conductor. The conductive component 58 is clamped between the connecting component 27 and the terminal region 26t.

[0080] In one embodiment, the substrate support 16 may further include a conductive component 59. The conductive component 59 has conductivity and elasticity. The conductive component 59 may be, for example, a spiral member, a spring, or a gasket formed of a conductor. The conductive component 59 is clamped between the connecting component 27 and the surface FRS of the focus ring FR. In another embodiment, the first portion 271 of the connecting component 27 has elasticity and can apply force to the surface FRS of the focus ring FR.

[0081] In one embodiment, the holder 25 may have insulating properties. The holder 25 is formed of, for example, quartz or alumina. The holder 25 and the focus ring FR (that is, the second annular portion FR2) shield the connection member 27 from the influence of plasma. In this embodiment, the connection member 27 is protected from the influence of plasma.

[0082] Various exemplary embodiments have been described above, but the present invention is not limited to the exemplary embodiments described above, and various omissions, substitutions, and changes can be made. In addition, elements in different embodiments can be combined to form other embodiments.

[0083] For example, the plasma processing device 1 is a capacitively coupled plasma processing device, and the plasma processing device of another embodiment may be a plasma processing device of a different type. Such a plasma processing device may be a plasma processing device of any type. As such a plasma processing device, an inductively coupled plasma processing device or a plasma processing device that generates plasma using a surface wave such as a microwave may be exemplified.

[0084] In addition, in another embodiment, the holding area 22 may have three or more electrodes as electrodes for generating electrostatic attraction.

[0085] In addition, Figure 3 In the example shown, both the voltage applied to the first electrode 221 and the voltage applied to the second electrode 222 are positive voltages. However, as long as a potential difference is generated between the first electrode 221 and the second electrode 222, the polarity of each of the voltage applied to the first electrode 221 and the voltage applied to the second electrode 222 is not limited. In addition, the potential of one of the first electrode 221 and the second electrode 222 may be 0 V. In addition, in order to generate a potential difference between the first electrode 221 and the second electrode 222, a separate power supply may be used.

[0086] Furthermore, the number of the connection members 27 is not limited. In order to electrically connect the terminal region 26t and the focus ring FR, a plurality of connection members 27 may be used. The plurality of connection members 27 may be arranged in the circumferential direction. The plurality of connection members 27 may also be arranged at equal intervals in the circumferential direction.

[0087] According to the above description, it should be understood that various embodiments of the present invention are described in this specification for the purpose of explanation, and various changes can be made without departing from the scope and spirit of the present invention. Therefore, the various modes disclosed in this specification are not intended to be limiting, and the true scope and spirit are given by the scope of the attached claims.

Claims

1. A substrate support for use in a plasma processing device, characterized in that: include: A first area for mounting a substrate; and a second region arranged so as to surround the first region, The second area includes: Lower electrode; a focus ring holding region including a first annular electrode and a second annular electrode, the first annular electrode being disposed inside the second annular electrode, the focus ring holding region being configured to hold the focus ring by a potential difference between the first annular electrode and the second annular electrode; and a bonding region having insulating properties and disposed between the focus ring holding region and the lower electrode, The substrate support also includes: a first lead extending in the longitudinal direction through the bonding region and connected to the first annular electrode at a first potential; and a second conductive wire extending in the longitudinal direction through the bonding region and connected to the second annular electrode at a second potential different from the first potential; The first wire is connected to the first annular electrode on the circumference of the first circle extending along the second area when viewed from above, and the second wire is connected to the second annular electrode on the circumference of the first circle when viewed from above, and the first circle alternately overlaps with the first annular electrode and the second annular electrode when viewed from above.

2. The substrate support device according to claim 1, characterized in that: The first conductive wire and the second conductive wire extend on the first circle in a plan view.

3. The substrate support device according to claim 2, characterized in that: The first annular electrode has a first protrusion that expands the first annular electrode outward relative to the first circle. The second annular electrode has a recessed portion formed in the shape of the first protruding portion. The first conductive wire is connected to the first protrusion and extends downward from the first protrusion. The second annular electrode has a second protrusion that expands the second annular electrode inward relative to the first circle. The first annular electrode has a recessed portion formed in the shape of the second protruding portion. The second lead wire is connected to the second protruding portion and extends downward from the second protruding portion.

4. The substrate support device according to claim 3, characterized in that: The first annular electrode has a corrugated outer edge, and the second annular electrode has a corrugated inner edge, and the outer edge and the inner edge are opposed to each other.

5. The substrate support according to any one of claims 1 to 4, characterized in that: The first region includes a substrate holding region provided independently from the focus ring holding region.

6. The substrate support according to any one of claims 1 to 4, characterized in that: The first area includes a substrate holding area, The substrate holding area and the focus ring holding area are integrated as an electrostatic holding member.

7. The substrate support according to any one of claims 1 to 4, characterized in that: The first conductive wire is connected to a first power source that generates the first potential, and the second conductive wire is connected to a second power source that generates the second potential.

8. The substrate support according to any one of claims 1 to 4, characterized in that: The first conductive line and the second conductive line are connected to one power source that generates the first potential and the second potential.

9. The substrate support according to any one of claims 1 to 4, characterized in that: One of the first potential and the second potential is 0V.

10. A plasma processing device, characterized in that: include: Chamber; a substrate support disposed in the chamber, The substrate support comprises: A first area for mounting a substrate; and a second region arranged so as to surround the first region, The second area includes: Lower electrode; a focus ring holding region including a first annular electrode and a second annular electrode, the first annular electrode being disposed inside the second annular electrode, the focus ring holding region being configured to hold the focus ring by a potential difference between the first annular electrode and the second annular electrode; and a bonding region having insulating properties and disposed between the focus ring holding region and the lower electrode, The substrate support also includes: a first lead extending in the longitudinal direction through the bonding region and connected to the first annular electrode at a first potential; and a second conductive wire extending in the longitudinal direction through the bonding region and connected to the second annular electrode at a second potential different from the first potential; The first lead is connected to the first annular electrode on the circumference of a first circle extending along the second region in a plan view, the second lead is connected to the second annular electrode on the circumference of the first circle in a plan view, and the first circle alternately overlaps with the first annular electrode and the second annular electrode in a plan view, The plasma processing device also includes: a high frequency power source electrically connected to the lower electrode of the substrate support; a first power source connected to the first annular electrode via the first conductive wire to generate the first potential; and A second power source is connected to the second annular electrode via the second conductive wire and generates the second potential.

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