A long filament and a filament net

Abstract

The present invention relates to a long filament and a filament net, the main features of which are that the wafer adopts a parallel structure and is provided with a metal reinforcing conductor for increasing the current; the long filament has a metal base layer, the wafer is in close contact and welding with the metal base layer to reduce the thermal resistance as much as possible; and the long filament is woven into a net with other heat-conducting filaments during use, and the other heat-conducting filaments are used to dissipate heat for the long filament. In order to enhance the heat dissipation, the long filament has a metal base layer in close contact and welding with the other heat-conducting filaments. The long filament and the filament net disclosed by the present invention have the advantages of high luminous density, good heat dissipation, high reliability, flexibility, lightness and can be industrially implemented.

Description

Technical Field

[0001] The invention relates to a filament, in particular to a long filament and a lighting net comprising the long filament. Background Art

[0002] In the prior art, LED filaments are generally made of glass or transparent organic materials as substrates to solidify LED chips on the substrates. LED chips are generally connected in series. The length of the filaments is generally greater than 20 cm. They are installed in a glass shell to make LED filament bulbs. Fluorescent glue is applied around the filaments. The entire filaments are converted from blue light to white light, which has a good lighting effect. Moreover, since the filaments are made of low-power LED chips, the light output of a single chip is small. Although a single filament has a few watts, the glare of the human eye is not very strong. The main disadvantages of existing filaments are poor heat dissipation, short length, and series connection. The fluorescent glue around the existing filaments is not conducive to heat transfer, and it is even more unfavorable to heat transfer when placed in a bulb container. Therefore, the junction temperature of the LED is around 100 degrees, resulting in a lifespan far from the ideal lifespan of the LED (100,000 hours); the second disadvantage - short length greatly limits its application in large-area flexible lighting; the third disadvantage - series connection, once an LED chip is damaged, the entire string is disconnected and does not light up.

[0003] In the prior art, a light strip generally consists of 3 LEDs and a resistor forming a "string", and then multiple "strings" are connected in parallel. If an LED in a "string" is damaged, only this "string" will turn off, while other "strings" will remain lit, thereby improving the reliability of the entire light strip. At the same time, 3 LEDs and 1 resistor are connected in series, and can generally be powered by an economical 12V switching power supply, that is, this series connection is conducive to improving the output voltage of the switching power supply, thereby selecting a more efficient constant-voltage switching power supply. The disadvantage of this solution is that about 10-20% of the energy is consumed in the resistor when the resistor is connected in series. The reason for setting the resistor is to limit the current by using the negative feedback effect of the resistor. The reason for current limiting is to prevent the LED from being overloaded with too much power, causing the LED to heat up too much and damage the LED or reduce the life of the LED. At present, most LEDs work below 90% of the full load. It can be seen that this solution cannot guarantee full load operation even if it wastes more than 10% of the power, let alone a working life of 100,000 hours.

[0004] In the prior art, multiple LEDs are connected in parallel to form a "parallel", and then multiple "parallels" are connected in series. The advantages of this solution are that there is no resistor to consume power, and it is easy to use a switching power supply with a higher efficiency. If one LED is damaged, it will not immediately cause the entire circuit to turn off the light. However, whether a constant voltage type or a constant current type switching power supply is selected, it will have an adverse effect on the entire lamp; when a constant current source is selected, when one LED is damaged, the total current will be shared by other LEDs in the same "parallel", which will accelerate the damage of other LEDs in the same "parallel"; when a constant voltage source is selected, when one LED is damaged, the current flowing through the entire circuit will decrease, and the light output of the entire LED lamp will be significantly reduced.

[0005] From the above analysis of the existing technology's full series mode, the mode of first connecting in series to form a "series" and then parallel, and the mode of first connecting in parallel to form a "parallel" and then connecting in series, it can be seen that they all have obvious defects. In order to overcome this defect and at the same time solve the defect that the existing LED filament has poor heat dissipation and cannot be produced in meter-level lengths, the designer has finally created the present invention, which is truly of practical value, after continuous research, design, and experimentation. Summary of the invention

[0006] The main purpose of the present invention is to overcome the shortcomings of poor heat dissipation, short length and series connection in the existing LED filament technology, and provide a new structure of LED long filament, as well as a long filament net proposed to solve its heat dissipation problem and large-scale flexible lighting problem. The technical problem to be solved is to set a thicker metal base layer on the long filament base, and the LED chip used is directly solidified or welded on the metal base layer. When weaving the long filament net, the metal base layer is welded with the staggered metal wires, so that the metal wires are used as the heat sink of the long filament. In order to solve the problem of poor reliability of the existing LED filament series connection, the LED chips are connected in parallel. In order to solve the problem of large parallel current, a metal reinforced conductor is added and welded on the upper surface of the metal conductive layer. This measure also strengthens the strength of the long filament; because the height of the metal reinforced conductor is higher than the height of the LED chip and its lead, it plays a role in protecting the LED chip, and the LED chip is not easily damaged during the weaving process of the long filament net. In order to solve the problem that the existing LED filament cannot be several meters or tens of meters, the manufacturing process adopts roll-to-roll corrosion and punching process and coating and welding metal reinforced conductor layer process.

[0007] The purpose of the present invention and the solution to the technical problem are achieved by adopting the following technical solutions.

[0008] A long filament according to the present invention is characterized in that it comprises:

[0009] Metal base layer, insulating layer, metal conductive layer, metal enhanced conductor, luminous body wafer, fluorescent glue protective layer;

[0010] A plurality of light-emitting body chips are connected in parallel, and a heat sink or an electrode having a heat sink function is welded to the metal base layer;

[0011] The insulating layer is arranged between the metal conductive layer and the metal base layer to insulate the two. The insulating layer is wider than the metal conductive layer and extends beyond the edge of the metal conductive layer. A hole is made to penetrate the insulating layer at a location where there is no metal conductive layer and where the electrode of the flip-chip light-emitting body wafer needs to be soldered or the front-mount light-emitting body wafer needs to be solidified, to expose the metal base layer.

[0012] The metal reinforcing conductor has a width smaller than the metal conductive layer and is welded on the upper surface of the metal conductive layer;

[0013] The fluorescent glue protective layer covers the metal conductive layer, the metal enhanced conductor, the luminous body wafer, and the upper surface of the insulating layer;

[0014] The length of the metal base layer, the insulating layer, the metal conductive layer, and the metal enhanced conductor ranges from 1 meter to 100 meters.

[0015] Furthermore, the metal base layer has a thickness range of 0.1-1mm and a width of 0.5-2mm; the insulating layer and the metal conductive layer have a thickness range of 0.01-0.1mm and a width of 0.5-2mm; the metal reinforced conductor has a thickness range of 0.1-2mm and a width of 0.5-1mm, and its height is higher than the height of the light-emitting chip or the height of the leads of the light-emitting chip.

[0016] Furthermore, the light emitting body chip is a light emitting diode (LED) chip or a laser diode (LD) chip, and its structure is face-up, flip-chip, vertical, or thin film.

[0017] Furthermore, the surfaces of the metal base layer, the metal conductive layer and the metal reinforcing conductor are plated with tin.

[0018] The first process for making the long filament according to the present invention is characterized in that it comprises: A) using the metal layer on the upper surface of a whole roll of single-sided FPC as the metal conductive layer, using the polyimide substrate of the FPC as the insulating layer, and corroding the metal conductive layer on the upper surface of the FPC in a roll-to-roll mode to form a circuit pattern; applying a glue layer on the non-metal conductive layer (i.e., the back side) of the FPC by a laminating process; and punching holes in the FPC with the metal conductive layer corroded away according to the need to set the light-emitting body chip;

[0019] B) Based on the above process, the whole roll of the metal base layer is bonded to the lower surface by a laminating process to obtain a metal base layer-insulating layer-metal conductive layer composite; a solder pad is made on the upper surface of the metal base layer-insulating layer-metal conductive layer composite according to the needs of the light-emitting body wafer by a roll-to-roll mode;

[0020] C) On the basis of the above process, when the light-emitting body chip is a face-up chip, a die bonding and wiring process is adopted, and when the light-emitting body chip is a flip-chip chip, a welding process is performed to fix the light-emitting body chip on the metal base layer-insulating layer-metal conductive layer composite body;

[0021] D) Based on the above process, the metal reinforcing conductor cut into thin strips is applied to the upper surface of the metal conductive layer of the metal base layer-insulating layer-metal conductive layer composite body by a coating process, and then welded together;

[0022] E) Based on the above process, the fluorescent glue protective layer is covered on the upper surface of the metal conductive layer, the metal enhanced conductor, the light emitting body wafer, and the insulating layer; and the fluorescent glue protective layer is cut longitudinally into strips.

[0023] The second process for making the long filament according to the present invention is characterized in that it includes: A) starting from a whole roll of thin copper substrate, using the metal layer on the upper surface of the thin copper substrate as the metal conductive layer, using the insulating layer of the thin copper substrate as the insulating layer, and using the base thin copper plate of the thin copper substrate as the metal base layer; corroding the metal conductive layer on the upper surface of the thin copper substrate in a roll-to-roll mode to form a circuit pattern; punching crystal holes and wire bonding pad holes on the thin copper substrate with the metal conductive layer corroded away according to the needs of setting the light-emitting body wafer, breaking through the insulating layer, and exposing the metal base layer; B) on the basis of the above process, using a roll-to-roll mode to make pads on the upper surface of the thin copper substrate according to the needs of the light-emitting body wafer;

[0024] C) On the basis of the above process, when the light-emitting body chip is a face-up chip, a die bonding and wiring process is adopted, and when the light-emitting body chip is a flip-chip chip, a welding process is performed to fix the light-emitting body chip on the thin copper substrate;

[0025] D) Based on the above process, the metal reinforcing conductor cut into thin strips is applied to the upper surface of the metal conductive layer of the copper substrate by a laminating process, and then welded together;

[0026] E) Based on the above process, the fluorescent glue protective layer is covered on the upper surface of the metal conductive layer, the metal enhanced conductor, the light emitting body wafer, and the insulating layer; and the fluorescent glue protective layer is cut longitudinally into strips.

[0027] A filament mesh proposed in the present invention is characterized in that it comprises the above-mentioned long filaments and heat-conducting filaments, and the long filaments and the heat-conducting filaments are woven into a mesh.

[0028] Furthermore, the thermal conductive filament is a metal filament or a graphite fiber filament, and the wire diameter is 0.05 mm-1 mm; the weaving method is plain weave, twill weave or satin weave, and the holes of the mesh are square or diamond-shaped; the number of layers of the filament mesh is a single-layer mesh or a multi-layer stacked mesh, and the mesh density is 5 meshes-60 meshes; the loom used is a shuttle loom, a rapier loom, a woven bag loom, or a ribbon loom. Furthermore, the warp of the filament mesh is a long filament or a thermal conductive filament or part of a long filament and part of a thermal conductive filament; the weft of the mesh is a long filament or a thermal conductive filament or part of a long filament and part of a thermal conductive filament.

[0029] Furthermore, the surfaces of the metal heat-conducting filaments are tin-plated, the staggered metal heat-conducting filaments are welded, and the metal heat-conducting filaments are welded at the intersections with the metal base layer of the long filament.

[0030] Furthermore, the filament mesh also includes a bus bar, which has a three-layer structure, with a lower layer being a metal base layer, a middle layer being an insulating layer, and an upper layer being a metal conductive layer. The metal thermal conductive filament is welded to one surface of the bus bar, and the metal reinforced conductor of the long filament is welded to the other surface of the bus bar.

[0031] It can be seen from the above technical solutions that the present invention - a long filament has at least the following advantages: the full parallel structure is adopted, and the reliability is greatly improved compared with the existing full series mode, the mode of first series connection into "series" and then parallel connection, and the mode of first parallel connection into "parallel" and then series connection. In addition to adding metal reinforced conductors to increase the current carrying capacity, the long filament and filament net of the present invention have strong enough heat dissipation capacity to make the junction temperature of the LED remain in a normal state even if it works in a state of overload several times, thereby ensuring that the LED is not damaged. In order to reduce the thermal resistance, the LED chip is directly solidified on the metal base layer or welded on the metal base layer, and the filament net is a heat-conducting filament that is in close contact and welding with the metal base layer of the long filament, and the heat-conducting filaments of the filament net are also in close contact and welding at the intersection. The long filament + filament net solution disclosed by the present invention can make the LED chip-metal base layer-heat-conducting filament-air, which is the smoothest and most economical heat dissipation path, and each square meter of the filament net can carry several kilowatts of LED chips.

[0032] The two processes disclosed in the present invention utilize the already mature FPC, copper substrate manufacturing process, roll-to-roll PCB manufacturing process, laminating process, punching process, and screen weaving process, so they can be implemented on an industrial scale.

[0033] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a schematic diagram of the structure of a long filament according to the first embodiment of the present invention, including a top view (upper) and a front view (lower).

[0035] Figure 2 It is a schematic diagram of the structure of a long filament according to the second embodiment of the present invention, including a top view (upper) and a front view (lower).

[0036] Figure 3 This is a first manufacturing process flow chart of a long filament of the present invention, including a top view (upper) and a front view (lower).

[0037] Figure 4 This is a second manufacturing process flow chart of a long filament of the present invention, including a top view (upper) and a front view (lower).

[0038] Figure 5 It is a schematic diagram of a filament mesh structure of the present invention, including a left view (left) and a top view (right).

[0039] Figure 6 It is a schematic diagram of the structure of a bus bar in a filament mesh of the present invention, including a bottom view (upper) and a front view (lower).

[0040] 1. Metal base layer 2. Insulation layer 3. Metal conductive layer 4. Metal enhanced conductor 5. Light-emitting chip (flip-chip) 6. Epoxy fluorescent adhesive protective layer 7. Rectangular pad on the metal conductive layer 8. Insulation layer opening 9. Pad made on the metal base layer at position 8 10. Solder 11. Adhesive layer under FPC

[0041] 20. Light-emitting body wafer (upright type) 21. Hole in the insulating layer for exposing the crystal bonding site made of the metal base layer 22. Hole in the insulating layer for exposing the lead pad made of the metal base layer 23. Pad on the metal conductive layer 24. Crystal bonding glue 25. Lead wire 26. Pad made on the metal base layer 30. Thermal conductive filament 31. Long filament 32. Bus bar 33. Metal base layer of the bus bar 34. Insulating layer of the bus bar 35. Metal conductive layer of the bus bar 36. Pad of the bus bar DETAILED DESCRIPTION

[0042] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the specific implementation method, structure, characteristics and effects of a long filament and a filament net proposed according to the present invention are described in detail below in combination with the accompanying drawings and preferred embodiments.

[0043] like Figure 1It is a schematic diagram of a top view (upper) and a front view (lower) of a long filament proposed in the first embodiment of the present invention. The metal base layer (1) is 100 cm long, 1000 μm wide and 200 μm thick, the insulating layer (2) is 50 μm thick, the metal conductive layer (3) is 15 μm thick and 650 μm wide after corrosion, the metal enhanced conductor (4) is 400 μm wide and 200 μm thick, the light emitting body chip (flip-chip) (5) is 300 μm long, 200 μm wide and 140 μm thick, and has a power of 50 mW. Figure 1 The reason why the width of the metal conductive layer (3) is smaller than that of the insulating layer (2) is to prevent the metal conductive layer (3) from short-circuiting with the metal base layer (1) and the heat-conducting filaments (30) of the filament mesh. Figure 1 The metal-enhanced conductor (4) is shown to be higher than the light-emitting chip (flip-chip type) (5) in order to protect the light-emitting chip (flip-chip type) (5) when weaving the filament mesh. An epoxy fluorescent glue protective layer (6) is applied on the metal conductive layer (3), the metal-enhanced conductor (4), the light-emitting chip (5), and the insulating layer (2). Figure 1 It is shown that there is no soldering of the light-emitting chip (flip-chip) (5) at positions (7) (8), (7) is a rectangular soldering pad made on the metal conductive layer (3), (8) is a hole opened in the insulating layer (2), (9) is a soldering pad made on the metal base layer at position 8, (9) is used to solder the pins of the light-emitting chip (flip-chip) (5) with stronger heat dissipation capability, (7) is used to solder the pins of the light-emitting chip (flip-chip) (5) with weaker heat dissipation capability, and soldering is performed using solder (10).

[0044] like Figure 3This is the first process flow of the present invention. The process starts with FPC. The FPC material used is 250mm wide and 1 meter long. The long filament produced is 1mm wide. After deducting the edge clamping width of 2cm, 230 long filaments can be obtained after longitudinal cutting. Step A is represented by sub-figures A1-A4. The top view is on the top and the front view is on the bottom. Sub-figure A1 represents a single-sided FPC. (2) is a polyimide thin layer, i.e., the insulating layer. (3) is a copper foil thin layer, i.e., the metal conductive layer. Sub-figure A2 represents that a part of the metal conductive layer is wet-etched to form a circuit pattern. Sub-figure A3 represents that a layer of adhesive layer (11) is adhered to the back of the FPC by a laminating process. Sub-figure A4 represents that a through hole (8) is opened in the insulating layer. Step B is represented by sub-figures B1-B2. Sub-figure B1 represents that a metal base layer (1) is adhered to the back of the FPC by a laminating process. Sub-figure B2 represents that a rectangular pad (7) is made on the metal conductive layer. At position (8), a pad (9) made of the metal base layer is formed. Step C is represented by sub-figure C, which shows that the flip-chip light-emitting body chip (5) is soldered to the pad (7) (9) with solder (10). Step D is represented by sub-figure D, which shows that the metal-enhanced conductor (4) is arranged on the upper surface of the metal conductive layer (3) by laminating and welding technology, and its height is higher than the upper surface of the light-emitting body chip (5). Step E is represented by sub-figure E, which shows that the epoxy fluorescent glue protective layer (6) is applied to the upper surface of the metal conductive layer (3), the metal-enhanced conductor (4), the light-emitting body chip (5), and the insulating layer (2).

[0045] like Figure 2 It is a schematic diagram of a top view (upper) and a front view (lower) of a long filament proposed in the second embodiment of the present invention. The metal base layer (1) is 100 cm long, 1000 microns wide, and 200 microns thick. The insulating layer (2) is 50 microns thick. The metal conductive layer (3) is 15 microns thick and 500 microns wide after corrosion. The metal enhanced conductor (4) is 400 microns wide and 200 microns thick. The light-emitting body chip (upright type) (20) is 300 microns long, 200 microns wide, 140 microns thick, and has a power of 50 mW. Figure 2 The reason why the width of the metal conductive layer (3) is smaller than that of the insulating layer (2) is to prevent the metal conductive layer (3) from short-circuiting with the metal base layer (1) and the heat-conducting filaments (30) of the filament mesh. Figure 2 The metal-enhanced conductor (4) is shown to be higher than the light-emitting chip (upright type) (20) in order to protect the light-emitting chip (upright type) (20) and its lead wire (25) when weaving the filament mesh. An epoxy fluorescent glue protective layer (6) is applied on the metal conductive layer (3), the metal-enhanced conductor (4), the light-emitting chip (5), and the insulating layer (2). Figure 2It is shown that there is no solid-crystal light-emitting chip (upright type) (20) at position (21), (23) is a circular solder pad made on the metal conductive layer (3), (22) is a circular through hole opened in the insulating layer (2), and a solder pad (26) is made on the metal base layer (1), (21) is a square through hole opened in the insulating layer (2) for solid-crystal (20), the light-emitting chip (upright type) (20) is directly solid-crystaled on the metal base layer (1) with a solid-crystal glue (24) to facilitate heat dissipation, and the two electrodes of the light-emitting chip (upright type) (20) are connected to the two solder pads (23) (26) respectively with leads (25).

[0046] like Figure 4 This is the second process flow of the present invention. The process starts with a thin copper substrate. The thin copper substrate used is 250 mm wide and 1 meter long. The long filament produced is 1 mm wide. After deducting the edge clamping width of 2 cm, 230 long filaments can be obtained after longitudinal cutting. Step A is represented by sub-figures A1-A3, with the top view on the top and the front view on the bottom. Sub-figure A1 represents a single-sided thin copper substrate, (2) is the insulating layer of the copper substrate, which is a polyimide thin layer, namely the insulating layer, (3) is the copper foil layer of the thin copper substrate, namely the metal conductive layer, and (1) is the base of the copper substrate, namely the metal base layer; sub-figure A2 represents that a part of the metal conductive layer is wet-etched to form a circuit pattern; sub-figure A3 represents that a square hole (21) is dug in the insulating layer (2) and the insulating layer (2) is dug through for the light-emitting body chip (20) to solidify the crystal, and a circular hole (22) is dug in the insulating layer (2) and the insulating layer (2) is dug through for the lead pad production of the light-emitting body chip (20). Step B is represented by sub-figure B, which shows that pads (23) are made on the metal conductive layer (3), a solid crystal glue (24) is applied at the position of the square hole (21), and a lead pad (26) is made on the metal base layer at the position of the circular hole (22). Step C is represented by sub-figure C, which shows that the upright light-emitting body chip (20) is firmly bonded with the solid crystal glue (24), and the two electrodes of the light-emitting body chip (20) are respectively connected to the pads (23) (26) by wires (25). Step D is represented by sub-figure D, which shows that the metal-enhanced conductor (4) is arranged on the upper surface of the metal conductive layer (3) by laminating and welding processes, and its height is higher than the upper surface of the upright light-emitting body chip (20) and the wires (25). Step E is represented by sub-figure E, which shows that an epoxy fluorescent glue protective layer (6) is applied to the upper surfaces of the metal conductive layer (3), the metal-enhanced conductor (4), the upright light-emitting body chip (20), and the insulating layer (2).

[0047] Figure 5The invention discloses a filament mesh structure schematic diagram, wherein the left view (left) and the top view (right) are shown. The heat-conducting filament (30) is a tinned copper wire with a diameter of 0.2 mm. The warp (vertical line) of the filament mesh is all heat-conducting filament (30), and the warp distance is 1 mm. The weft (horizontal line) of the filament mesh is woven into one long filament (31) for every 9 heat-conducting filaments (30). The long filament (31) is made according to the first or second embodiment. The weft distance of the heat-conducting filament (30) is 1 mm. The distance between two adjacent long filaments (31) is about 1 cm. Because 1 cm long filament is installed with 10 50 mW LED chips, it is equivalent to installing 0.5 W LED chips in 1 square centimeter of filament mesh, which meets the heat dissipation requirements. The busbar (32) is on the left and right sides of the filament mesh and is woven into the filament mesh as a warp using a plain weaving process. During weaving, the heald frame is pulled up and down to control the busbar (32) to always be above each long filament (31), so that the metal reinforced conductor (4) of the long filament (31) is welded to the lower surface of the busbar (32); similarly, the heald frame is pulled up and down to control the busbar (32) to always be below the weft of each heat-conducting filament (30), so that the weft of each heat-conducting filament (30) is welded to the upper surface of the busbar (32).

[0048] like Figure 6 As shown, the busbar (32) is 1 cm wide and the same length as the filament mesh. The busbar (32) is made into a whole by a laminating process to form a metal base layer (33), an insulating layer (34) and a metal conductive layer (35) of the busbar. The thickness of the metal base layer (33) of the busbar is 0.2 mm, the thickness of the insulating layer (34) of the busbar is 0.1 mm, and the thickness of the metal conductive layer (35) of the busbar is 0.4 mm. A welding pad (36) is made on the metal conductive layer (35) of the busbar according to the spacing of the long filaments (31). The metal conductive layer (35) of the busbar is relatively thick because the current of the parallel circuit is in the order of several amperes to tens of amperes. The metal reinforcing conductor (4) of the long filament (31) is welded to the pad (36) of the busbar, and the two ends of the long filament (31) are kept at a certain distance without installing the light-emitting body chip, and the epoxy fluorescent glue protective layer (6) is not coated. The weft line of the heat-conducting filament (30) is welded to the metal base layer (33) of the busbar. The surface of the heat-conducting filament (30) and the metal base layer (1) of the long filament (31) are plated with low-temperature solder, and after heating treatment, the cross points between them are welded as a whole. The metal conductive layer (35) of the busbar is connected to the positive pole of the constant voltage switching power supply (not shown in the figure), and the heat-conducting filament (30) is connected to the negative pole of the constant voltage switching power supply, and it can work. The heat generated by the light-emitting body chip is transferred to the heat-conducting filament (30) through the metal base layer (1), and then transferred to the air through the heat-conducting filament (30), and the conduction thermal resistance and the convection thermal resistance are both extremely small.

[0049] The above is only one embodiment of the present invention and does not limit the present invention in any form. Any technician familiar with the profession can make some changes or modify the technical contents disclosed above into equivalent embodiments without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A long filament, characterized in that It includes: Metal base layer, insulating layer, metal conductive layer, metal enhanced conductor, luminous body wafer, fluorescent glue protective layer; A plurality of light-emitting body chips are connected in parallel, and a heat sink or an electrode having a heat sink function is welded to the metal base layer; The insulating layer is arranged between the metal conductive layer and the metal base layer to insulate the two. The insulating layer is wider than the metal conductive layer and extends beyond the edge of the metal conductive layer. A hole is made to penetrate the insulating layer at a location where there is no metal conductive layer and where electrodes of a flip-chip light-emitting body wafer need to be soldered or where a face-up light-emitting body wafer needs to be bonded to expose the metal base layer. The metal reinforcing conductor has a width smaller than the metal conductive layer and is welded on the upper surface of the metal conductive layer; The fluorescent glue protective layer covers the metal conductive layer, the metal enhanced conductor, the luminous body wafer, and the upper surface of the insulating layer; The length of the metal base layer, the insulating layer, the metal conductive layer, and the metal enhanced conductor ranges from 1 meter to 100 meters.

2. A long filament according to claim 1, characterized in that The metal base layer has a thickness range of 0.1-1mm and a width of 0.5-2mm; the insulating layer and metal conductive layer have a thickness range of 0.01-0.1mm and a width of 0.5-2mm; the metal reinforced conductor has a thickness range of 0.1-2mm and a width of 0.5-1mm, and its height is higher than the height of the light-emitting chip or the height of the leads of the light-emitting chip.

3. A long filament according to claim 1, characterized in that The light emitting body chip is a light emitting diode (LED) chip or a laser diode (LD) chip, and its structure is face-up, flip-chip, vertical, or thin film.

4. A long filament according to claim 1, characterized in that The surfaces of the metal base layer, the metal conductive layer and the metal enhanced conductor are plated with tin.

5. A process for producing a long filament as claimed in any one of claims 1 to 4, characterized in that It includes: A) using the metal layer on the upper surface of a whole roll of single-sided FPC as the metal conductive layer, using the polyimide substrate of the FPC as the insulating layer, corroding the metal conductive layer on the upper surface of the FPC in a roll-to-roll mode to form a circuit pattern; applying a glue layer on the non-metal conductive layer (i.e., the back side) of the FPC by a laminating process; and drilling holes in the FPC with the metal conductive layer corroded away according to the need to set the light-emitting body chip; B) on the basis of the above process, the whole roll of the metal base layer is bonded to the lower surface by a laminating process to obtain a metal base layer-insulating layer-metal conductive layer composite; Using a roll-to-roll mode, a pad is manufactured on the upper surface of the metal substrate layer-insulating layer-metal conductive layer composite body according to the requirements of the light-emitting body wafer; C) On the basis of the above process, when the light-emitting body chip is a face-up chip, a die bonding and wiring process is adopted, and when the light-emitting body chip is a flip-chip chip, a welding process is performed to fix the light-emitting body chip on the metal base layer-insulating layer-metal conductive layer composite body; D) Based on the above process, the metal reinforcing conductor cut into thin strips is applied to the upper surface of the metal conductive layer of the metal base layer-insulating layer-metal conductive layer composite body by a coating process, and then welded together; E) Based on the above process, the fluorescent glue protective layer is covered on the upper surface of the metal conductive layer, the metal enhanced conductor, the light emitting body wafer, and the insulating layer; and the fluorescent glue protective layer is cut longitudinally into strips.

6. A process for producing a long filament as claimed in any one of claims 1 to 4, characterized in that It includes: A) starting from a whole roll of thin copper substrate, using the metal layer on the upper surface of the thin copper substrate as the metal conductive layer, using the insulating layer of the thin copper substrate as the insulating layer, and using the base thin copper plate of the thin copper substrate as the metal base layer; corroding the metal conductive layer on the upper surface of the thin copper substrate in a roll-to-roll mode to form a circuit pattern; punching crystal holes and wire bonding pad holes on the thin copper substrate with the metal conductive layer corroded away according to the need to set the light-emitting body wafer, breaking through the insulating layer, and exposing the metal base layer; B) Based on the above process, a solder pad is manufactured on the upper surface of the thin copper substrate according to the needs of the light-emitting body wafer in a roll-to-roll mode; C) On the basis of the above process, when the light-emitting body chip is a face-up chip, a bonding and wiring process is adopted, and when the light-emitting body chip is a flip-chip chip, a welding process is performed to fix the light-emitting body chip on the thin copper substrate; D) Based on the above process, the metal reinforcing conductor cut into thin strips is applied to the upper surface of the metal conductive layer of the copper substrate by a laminating process, and then welded together; E) Based on the above process, the fluorescent glue protective layer is covered on the upper surface of the metal conductive layer, the metal enhanced conductor, the light emitting body wafer, and the insulating layer; and the fluorescent glue protective layer is cut longitudinally into strips.

7. A filament mesh, characterized in that The invention comprises the long filament and the heat-conducting filament as claimed in any one of claims 1 to 4, wherein the long filament and the heat-conducting filament are woven into a mesh.

8. The filament mesh according to claim 7, characterized in that The thermal conductive filaments are metal filaments or graphite fiber filaments with a wire diameter of 0.05 mm-1 mm; the weaving method is plain weave, twill weave or satin weave; the holes of the mesh are square or diamond-shaped, the number of mesh layers is single-layer mesh or multi-layer stacked mesh, and the mesh density is 5-60 meshes; the loom used is a shuttle loom, a rapier loom, a woven bag loom, or a ribbon loom.

9. The filament mesh according to claim 7, characterized in that The warp of the filament mesh is long filaments or heat-conducting filaments or part of long filaments and part of heat-conducting filaments; the weft of the mesh is long filaments or heat-conducting filaments or part of long filaments and part of heat-conducting filaments.

10. The filament mesh according to claim 8, characterized in that The surfaces of the metal filaments are tinned, the staggered metal filaments are welded, and the metal filaments are welded at the intersections with the metal base layer of the long filament.

11. The filament mesh according to claim 7, characterized in that The filament mesh also includes a bus bar, which is a three-layer structure, with a lower layer being a metal base layer, a middle layer being an insulating layer, and an upper layer being a metal conductive layer. The thermal conductive filament is welded to one surface of the bus bar, and the metal reinforced conductor of the long filament is welded to the other surface of the bus bar.

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