A semiconductor laser stacked array positioning structure and method
By using the positioning structure of the right side plate and the left side plate in the semiconductor laser stacked array, combined with the support plate and the left supporting edge, three-dimensional positioning of the stacked array is achieved, which solves the problem of low reliability and optical problems of the stacked array in the existing technology. The problem of difficult shaping is improved, and the reliability of the stacked array and the effect of optical shaping are improved.
Patent Information
- Application Number
- CN202010251306.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-04-01
- Publication Date
- 2025-01-21
- Estimated Expiration
- 2040-04-01
AI Technical Summary
When the existing semiconductor laser stack array is positioned through the positioning hole, there are problems such as low reliability, easy deformation, water leakage and difficulty in optical shaping.
A semiconductor laser stacked array positioning structure and method is adopted. Through the cooperation of the right side plate and the left side plate, combined with the support plate and the left supporting edge, complete positioning of the X-axis, Y-axis and Z-axis directions of the stacked array is achieved. Hole positioning for the heat sink is avoided.
It effectively improves the reliability of the stacked array, prevents deformation and water leakage, reduces the difficulty and cost of optical shaping, and improves the heat dissipation capacity and strength of the heat sink.
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Figure CN111404021B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor laser technology, and more specifically to a semiconductor laser stack array positioning structure and method, which are used for positioning and clamping the semiconductor laser stack array. Background Art
[0002] In order to further increase the output power of the product, most current semiconductor lasers adopt a stacked array structure, which is composed of multiple semiconductor lasers stacked vertically.
[0003] When stacking existing semiconductor lasers, most of them rely on the positioning holes of the semiconductor laser heat sink for positioning. Currently, the most common ones are single-hole heat sink positioning structure and double-hole heat sink positioning structure. However, this positioning structure has obvious defects:
[0004] (1) When hole positioning is used, positioning holes must be opened on the heat sink, which affects the heat dissipation capacity and strength of the heat sink and increases product costs;
[0005] (2) The gap between the heat sink hole and the positioning pin will cause the product position to change;
[0006] (3) Regardless of whether it is a single-hole structure or a double-hole structure, it cannot accurately control the position of each semiconductor laser in the Z-axis direction of the product. As the number of stacked products increases, the extrusion deformation will become more serious.
[0007] Due to the defects of the above positioning structure, the reliability of the existing semiconductor laser stack is not high, and the stack is easily deformed, causing water leakage in the stack, resulting in product failure, difficulty in optical shaping of the stack and high cost. Summary of the invention
[0008] The purpose of the present invention is to solve the problem of low stacking reliability when the existing semiconductor lasers are positioned by positioning holes in the stacking array. The present invention provides a semiconductor laser stacking array positioning structure and method, which can effectively improve the reliability of the semiconductor laser stacking array structure.
[0009] In order to achieve the above-mentioned purpose, the present invention specifically adopts the following technical solutions:
[0010] A semiconductor laser stacked array positioning structure includes a right side plate and a left side plate, the right side plate is L-shaped and consists of a right plate and a rear plate perpendicular to each other, a plurality of L-shaped support plates distributed in an array are horizontally arranged on the inner side of the right side plate, the support plates consist of a right support edge and a rear support edge perpendicular to each other, the left side plate and the right side plate are parallel to each other, the left side plate is connected to the free end of the rear plate through a side connecting member, a plurality of left support edges corresponding to the rear support edge are horizontally arranged on the inner side of the left side plate, a negative electrode cover plate is horizontally arranged on the upper ends of the right side plate and the left side plate through an upper connecting member, and a positive electrode cover plate is horizontally arranged on the lower ends of the right side plate and the left side plate through a lower connecting member, specifically, the right side plate and the left side plate are made of metal materials such as stainless steel and copper or non-metallic materials, and the materials have a certain strength to avoid deformation during assembly, and if the right side plate and the left side plate are made of metal materials, it is necessary to insulate the right side plate and the left side plate, such as plating an insulating coating or attaching an insulating medium.
[0011] Furthermore, the thickness of the support plate and the left support edge is slightly smaller than the total thickness of the insulating layer and the negative copper foil of the semiconductor laser, which facilitates elastic contact between the copper foil of a next semiconductor laser and the lower surface of the heat sink of the previous semiconductor laser in the vertical direction, thereby ensuring circuit conduction and fixation of the semiconductor laser in the Z-axis direction.
[0012] Furthermore, the width of the support plate and the left support edge is slightly smaller than the width from the insulating layer of the semiconductor laser to the edge of the heat sink.
[0013] Furthermore, the distance between two adjacent support plates is equal to or slightly greater than the thickness of the semiconductor laser heat sink.
[0014] A semiconductor laser stacking array positioning method, firstly placing the semiconductor laser on the support plate at the lowest end, so that the right side and the rear side of the semiconductor laser are attached to the inner side of the right side plate, then putting a matching gasket in the water hole of the semiconductor laser, and stacking the semiconductor lasers upwards by analogy, after the placement is completed, the left side plate is fixed to the free end of the right side plate through the side connector, so as to achieve complete positioning of the stacking array in both the X-axis and Y-axis directions, then the negative electrode cover plate is fixed to the upper ends of the right side plate and the left side plate through the upper connector, and the positive electrode cover plate is fixed to the right side plate through the lower connector. At the lower ends of the side panels and the left side panels, the stacked array limits the downward direction of the Z axis of each semiconductor laser through the right supporting edge, the rear supporting edge and the left supporting edge, and limits the upward direction of the Z axis through the elastic compression contact of the bottom surface of a semiconductor laser on the stacked array with the insulating layer and the negative copper foil of the next semiconductor laser, thereby achieving complete limitation of the stacked array in the Z axis direction. Specifically, the semiconductor laser is an insulating semiconductor laser or a non-insulating semiconductor laser, and the heat dissipation mode of the semiconductor laser is macro-channel water cooling or micro-channel water cooling.
[0015] The beneficial effects of the present invention are as follows:
[0016] 1. The present invention realizes complete positioning of the semiconductor laser stack in the X-axis and Y-axis directions by cooperating with the right plate and the left plate, and limits the Z-axis downward direction of each semiconductor laser through the support plate and the left support edge. The Z-axis is limited upward by elastic compression contact between the bottom surface of a semiconductor laser on the stack and the insulating layer and the negative copper foil of the next semiconductor laser, thereby realizing complete positioning of the stack in the Z-axis direction. The positioning mechanism effectively controls the position and pressure of each semiconductor laser in the stack by limiting the stack in the X-axis, Y-axis and Z-axis directions, thereby preventing the stack from being deformed and greatly improving the reliability of the stack;
[0017] 2. The present invention does not require a positioning hole to be opened on the semiconductor laser heat sink, which can greatly improve the strength of the heat sink itself, enhance the heat sink's heat dissipation capacity, and reduce the heat sink material and processing costs;
[0018] 3. The present invention can effectively ensure the controllability of the spot position of each semiconductor laser in the stacked array, thereby reducing the difficulty and cost of subsequent optical shaping. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 It is a structural schematic diagram of the present invention;
[0020] Figure 2 It is a structural schematic diagram of the right side plate of the present invention;
[0021] Figure 3 It is a structural schematic diagram of the left side plate of the present invention;
[0022] Figure 4 It is a schematic structural diagram of a semiconductor laser of the present invention;
[0023] Figure 5 The schematic diagram of the stacked array and optical shaping structure of the present invention is
[0024] 1-right side plate, 2-left side plate, 3-negative electrode cover plate, 4-positive electrode cover plate, 5-semiconductor laser, 6-rear plate, 7-right plate, 8-right supporting edge, 9-rear supporting edge, 10-left supporting edge, 11-insulating layer, 12-negative copper foil, 13-heat sink, 14-stacked array, 15-light-emitting area, 16-beam deflector, 17-SAC array lens. DETAILED DESCRIPTION
[0025] In order for those skilled in the art to better understand the present invention, the present invention is further described in detail below in conjunction with the following examples. The following detailed description of the embodiments of the present invention is not intended to limit the scope of the present invention as claimed, but merely represents selected embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative work are within the scope of protection of the present invention.
[0026] Example 1
[0027] like Figure 1 As shown, this embodiment provides a semiconductor laser stacked array positioning structure, including a right side plate 1 and a left side plate 2, the right side plate 1 is L-shaped and consists of a right plate 7 and a rear plate 6 that are perpendicular to each other, a plurality of L-shaped support plates distributed in an array are horizontally arranged on the inner side of the right side plate 1, the support plates consist of a right support edge 8 and a rear support edge 9 that are perpendicular to each other, the right support edge 8 is vertically connected to the right plate 7, the rear support edge 9 is vertically connected to the rear plate 6, the left side plate 2 and the right plate 7 are parallel to each other, the left side plate 2 is connected to the free end of the rear plate 6 through a side connecting member, the side connecting member is a screw connecting mechanism, and a plurality of L-shaped support plates corresponding to the rear support edge 9 are horizontally arranged on the inner side of the left side plate 2 A left supporting edge 10 is vertically connected to the left side plate 2, and the upper ends of the right side plate 1 and the left side plate 2 are horizontally provided with a negative electrode cover plate 3 through an upper connecting piece, and the lower ends of the right side plate 1 and the left side plate 2 are horizontally provided with a positive electrode cover plate 4 through a lower connecting piece, and the upper connecting piece and the lower connecting piece are screw connection mechanisms. Specifically, the right side plate 1 and the left side plate 2 are made of metal materials such as stainless steel and copper or non-metallic materials, and the materials have a certain strength to avoid deformation during assembly. If the right side plate 1 and the left side plate 2 are made of metal materials, it is necessary to insulate the right side plate 1 and the left side plate 2, such as plating an insulating coating or attaching an insulating medium.
[0028] Preferably, the stacked array 14 positioned by the positioning mechanism is optically shaped by a beam deflector 16 (BTS) and a SAC array lens 17. Specifically, a beam deflector 16 is added to the light emitting area 15 of each semiconductor laser 5 in the stacked array 14, so that the fast axis direction of the light source emitted by each semiconductor laser 5 is collimated, and the fast and slow axes are turned 90 degrees, and then the slow axis direction is collimated by the SAC array lens 17 to complete the light spot shaping of the entire stacked array 14. Since the stacked array 14 adopts an array lens, the cost and difficulty of slow axis shaping of the stacked array 14 can be greatly reduced.
[0029] A semiconductor laser stacking array positioning method, firstly placing the semiconductor laser 5 on the support plate at the lowest end, so that the right side and the rear side of the semiconductor laser 5 are attached to the inner side of the right side plate 1, then putting a matching gasket into the water hole of the semiconductor laser 5, and stacking the semiconductor laser 5 upwards by analogy, after the placement is completed, the left side plate 2 is fixed to the free end of the right side plate 1 through the side connecting piece, so as to achieve complete positioning of the stacking array 14 in both the X-axis and Y-axis directions, and then the negative electrode cover plate 3 is fixed to the upper ends of the right side plate 1 and the left side plate 2 through the upper connecting piece, and the positive electrode cover plate 4 is fixed to the right side plate 1 and the left side plate 2 through the lower connecting piece. At the lower end of the side plate 2, the stacked array 14 limits the Z-axis downward direction of each semiconductor laser 5 through the right supporting edge 8, the rear supporting edge 9 and the left supporting edge 10, and limits the Z-axis upward direction through the elastic compression contact of the bottom surface of a semiconductor laser 5 on the stacked array 14 with the insulating layer 11 and the negative copper foil 12 of the next semiconductor laser 5, thereby achieving complete limitation of the stacked array 14 in the Z-axis direction. Specifically, the semiconductor laser 5 is an insulating semiconductor laser 5 or a non-insulating semiconductor laser 5, and the heat dissipation mode of the semiconductor laser 5 is macro-channel water cooling or micro-channel water cooling.
[0030] Working principle: Through the cooperation of the right side plate 1 and the left side plate 2, the semiconductor laser 5 stack array 14 is completely limited in the X-axis and Y-axis directions. The Z-axis downward direction of each semiconductor laser 5 is limited by the support plate and the left support edge 10. The Z-axis upward direction is limited by the elastic compression contact of the bottom surface of a semiconductor laser 5 on the stack array 14 with the insulating layer 11 and the negative copper foil 12 of the next semiconductor laser 5, thereby achieving complete limitation of the stack array 14 in the Z-axis direction. The positioning mechanism effectively controls the position and pressure of each semiconductor laser 5 in the stack array 14 by limiting the stack array 14 in the X-axis, Y-axis and Z-axis directions, preventing the stack array 14 from deformation, and greatly improving the reliability of the stack array 14.
[0031] Example 2
[0032] like Figure 1 As shown, this embodiment is further improved on the basis of the embodiment 1, specifically, the thickness of the support plate and the left support edge 10 is slightly smaller than the total thickness of the insulating layer 11 and the negative copper foil 12 of the semiconductor laser 5, so as to facilitate the elastic contact between the copper foil of the next semiconductor laser 5 and the lower surface of the heat sink 13 of the previous semiconductor laser 5 in the vertical direction, thereby ensuring the circuit conduction and the fixation of the semiconductor laser 5 in the Z-axis direction.
[0033] Example 3
[0034] like Figure 1As shown, this embodiment is further improved on the basis of Embodiment 1, specifically, the width of the support plate and the left support edge 10 is slightly smaller than the width from the insulating layer 11 of the semiconductor laser 5 to the edge of the heat sink 13 .
[0035] Example 4
[0036] like Figure 1 As shown, this embodiment is further improved on the basis of the embodiment 1, specifically, the distance between two adjacent support plates is equal to or slightly larger than the thickness of the heat sink 13 of the semiconductor laser 5, so that the semiconductor laser 5 is conveniently placed between the two support plates.
[0037] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. The patent protection scope of the present invention shall be based on the claims. All equivalent structural changes made using the contents of the specification of the present invention should also be included in the protection scope of the present invention.
Claims
1. A semiconductor laser stacked array positioning structure, characterized in that: The invention comprises a right side plate (1) and a left side plate (2), wherein the right side plate (1) is L-shaped and consists of a right plate (7) and a rear plate (6) which are perpendicular to each other, a plurality of L-shaped support plates distributed in an array are horizontally arranged on the inner side of the right side plate (1), and the support plates consist of a right support edge (8) and a rear support edge (9) which are perpendicular to each other, the left side plate (2) and the right side plate (7) are parallel to each other, the left side plate (2) is connected to the free end of the rear plate (6) through a side connecting member, a plurality of left support edges (10) which correspond to the rear support edge (9) are horizontally arranged on the inner side of the left side plate (2), a negative electrode cover plate (3) is horizontally arranged on the upper ends of the right side plate (1) and the left side plate (2) through an upper connecting member, and a positive electrode cover plate (4) is horizontally arranged on the lower ends of the right side plate (1) and the left side plate (2) through a lower connecting member; The thickness of the support plate and the left support edge (10) is slightly smaller than the total thickness of the insulating layer (11) and the negative electrode copper foil (12) of the semiconductor laser (5); The width of the support plate and the left support edge (10) is slightly smaller than the width from the insulating layer (11) of the semiconductor laser (5) to the edge of the heat sink (13); The distance between two adjacent support plates is equal to or slightly greater than the thickness of the heat sink (13) of the semiconductor laser (5); The positioning method of the semiconductor laser stacking array positioning structure is as follows: firstly, the semiconductor laser (5) is placed on the support plate at the bottom end so that the right side and the rear side of the semiconductor laser (5) are attached to the inner side of the right side plate (1); then, a matching gasket is placed in the water hole of the semiconductor laser (5); and the semiconductor lasers (5) are stacked upward in this way. After the placement is completed, the left side plate (2) is fixed to the free end of the right side plate (1) through the side connecting piece to achieve complete positioning of the stacking array (14) in both the X-axis and Y-axis directions; then, the negative electrode cover plate (3) is fixed through the upper connecting piece. At the upper ends of the right side plate (1) and the left side plate (2), the positive electrode cover plate (4) is fixed to the lower ends of the right side plate (1) and the left side plate (2) through the lower connecting piece. The stacked array (14) limits the Z-axis downward direction of each semiconductor laser (5) through the support plate and the left support edge (10). The Z-axis is limited in the upward direction through the elastic compression contact between the bottom surface of a semiconductor laser (5) on the stacked array (14) and the insulating layer (11) and the negative electrode copper foil (12) of the next semiconductor laser (5), thereby achieving complete limitation of the stacked array (14) in the Z-axis direction.
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