A multi-point measurement device for shell temperature of power semiconductor devices

Abstract

The present invention provides a multi-point measurement device for the shell temperature of a power semiconductor device, which is arranged on a heat exchanger (2) and comprises a temperature measuring substrate (1-1) and a plurality of temperature measuring elements (1-2); the temperature measuring substrate (1-1) is mounted on the heat exchanger (2), and the plurality of temperature measuring elements (1-2) are mounted on the temperature measuring substrate (1-1); during measurement, the plurality of temperature measuring elements (1-2) are placed on the shell of the semiconductor power device and are used to perform multi-point measurement of the shell temperature of the power semiconductor device, thereby simplifying the test process and improving the test efficiency and accuracy; the plurality of temperature measuring elements (1-2) realize multi-point measurement of the shell temperature of the power semiconductor device, and the arrangement of the "F"-shaped groove structure inside the temperature measuring substrate effectively avoids the chip position, has little influence on the electrothermal mechanical and other properties of the device under test, and is easy to process; the device can be used for shell temperature measurement of power semiconductor devices with different packaging forms, and has good versatility.

Description

Technical Field

[0001] The present invention relates to the technical field of power semiconductors, and in particular to a multi-point measuring device for shell temperature of a power semiconductor device. Background Art

[0002] Semiconductor devices that control currents up to 100A or operate at voltages up to 1200V are generally referred to as power semiconductors. Key power semiconductor devices include IGBTs, diodes, and MOSFETs. With the widespread application of these power semiconductor devices in industries such as industry, power generation, and rail transit, reliability issues under complex operating conditions and concentrated power densities are receiving increasing attention. Due to turn-on, turn-off, and conduction power consumption, device temperatures rise significantly. For temperature-sensitive chips, excessively high temperatures can cause unstable operation and even burnout. According to statistics, approximately 55% of all failure factors are primarily caused by temperature. This indicates that temperature-induced failures are a significant factor affecting device reliability, and therefore chips are often designed with a maximum allowable junction temperature limit. During testing or application, appropriate thermal management methods are selected based on the thermal characteristics and operating conditions of the power semiconductor device. Temperature control is performed through cooling or heating, and junction temperature monitoring is used to verify the effectiveness of thermal management. Thermal characteristics research and thermal management design related to power semiconductor devices are closely related to the junction temperature of the device. However, since power semiconductor devices themselves are made of multi-layer packaging of multiple materials such as silicon-based chips, it is impossible to directly measure the temperature of the chip during normal operation of the power semiconductor device without destroying the packaging structure of the power semiconductor device. Therefore, the chip temperature can only be obtained indirectly by measuring the shell temperature of the power semiconductor device package. In the existing technology, there are usually two ways to indirectly measure the shell temperature of power semiconductor devices:

[0003] (1) Encapsulating the NTC resistor inside the chip to achieve indirect measurement of the chip temperature, but it is necessary to first query the pre-measured chip temperature-NTC resistor temperature relationship curve to indirectly estimate the chip temperature. This method requires determining the relationship curve between the chip temperature and the temperature sensor in advance. The setting of the NTC resistor increases the difficulty of packaging and affects the reliability of the packaging structure. The measurement process is complicated and the measurement efficiency is low.

[0004] (2) Using the thermal impedance model, the thermal resistance and junction temperature of the model are calculated using the power consumption of the power semiconductor device and the shell temperature of the power semiconductor device. The power consumption of the power semiconductor device is obtained by substituting the detected electrical parameters into the calculation formula; the shell temperature of the power semiconductor device is generally measured by thermocouples or thermal resistors at the center of the device shell or directly measuring the temperature of the heat exchanger where the power semiconductor device is installed. For power semiconductor devices, there are many chips packaged inside. Due to the influence of the parallel arrangement of the chips, the shell temperature distribution of the power semiconductor device is uneven. The use of the thermal impedance model is not targeted. The temperature measurement point is not necessarily the shell position corresponding to the thermal impedance model. The shell temperature obtained is not necessarily the highest shell temperature. It deviates greatly from the actual shell temperature and has low accuracy. Summary of the Invention

[0005] In order to overcome the shortcomings of the above-mentioned prior art, such as the complex measurement process and low measurement efficiency and accuracy, the present invention provides a multi-point measurement device for the shell temperature of a power semiconductor device, which is arranged on a heat exchanger (2) and comprises a temperature measurement substrate (1-1) and a plurality of temperature measurement elements (1-2);

[0006] The temperature measuring substrate (1-1) is mounted on the heat exchanger (2), and the plurality of temperature measuring elements (1-2) are mounted on the temperature measuring substrate (1-1);

[0007] During measurement, the multiple temperature measuring elements (1-2) are placed on the shell of the semiconductor power device and are used to perform multi-point measurement of the shell temperature of the power semiconductor device.

[0008] The temperature measuring substrate (1-1) is provided with a plurality of longitudinal main grooves, and a plurality of transverse branch grooves are provided on each longitudinal main groove; each longitudinal main groove and the connected transverse branch grooves form a "F"-shaped groove (1-1-1); the "F"-shaped groove (1-1-1) runs through the upper surface and the lower surface of the temperature measuring substrate (1-1); one end of the "F"-shaped groove (1-1-1) is connected to the first transverse branch groove, and the other end thereof extends outward to the side surface of the temperature measuring substrate 1-1;

[0009] The temperature measuring element (1-2) is installed inside the V-shaped groove (1-1-1).

[0010] The temperature measuring element (1-2) is a miniature compressible structure, comprising a temperature measuring probe (1-2-1), a spring chamber (1-2-3) and a compression spring (1-2-4);

[0011] The temperature measuring probe (1-2-1) comprises a contact temperature measuring element, the upper end of which is provided with a boss structure, and the lower end of which is provided with an embedded groove. The compression spring (1-2-4) is located inside the spring compartment (1-2-3), and the spring compartment (1-2-3) is installed in the embedded groove. The spring compartment (1-2-3) can be telescopically slid therein, and can measure the shell temperature of power semiconductor devices of different packaging forms.

[0012] The contact temperature measuring element is a thermocouple or a thermal resistor.

[0013] The opening width of the "F"-shaped groove (1-1-1) on the upper surface of the temperature measuring substrate (1-1) is smaller than the opening width of the groove on the lower surface of the temperature measuring substrate (1-1).

[0014] The upper end surface and lower cross section of the boss structure are both circular;

[0015] The diameter of the upper end surface is smaller than the diameter of the lower section, the diameter of the upper end surface matches the opening width of the F-shaped groove (1-1-1) on the upper surface of the temperature measuring substrate (1-1), and the diameter of the lower section matches the opening width of the F-shaped groove (1-1-1) on the lower surface of the temperature measuring substrate (1-1).

[0016] The end of the transverse branch channel is a limiting groove (1-1-1-3) for limiting the temperature measuring element (1-2);

[0017] The longitudinal main groove is located between adjacent chips inside the power semiconductor device (4) under test, and the limiting groove (1-1-1-3) corresponds to the position of the chip.

[0018] The spring compartment (1-2-3) is a hollow cylindrical structure;

[0019] The lower end of the spring chamber (1-2-3) is a hemispherical surface, and the upper end thereof is embedded in the groove.

[0020] The working load of the compression spring (1-2-4) is not less than 2N, and its working compression stroke is not less than 5mm.

[0021] The temperature measuring substrate (1-1) is also provided with a plurality of positioning holes;

[0022] One of the positioning holes is located at the center of the upper surface of the temperature measurement substrate (1-1), and the remaining positioning holes are evenly and symmetrically distributed around it, and are used for positioning the power semiconductor device (4) to be measured.

[0023] The temperature measuring substrate (1-1) is also provided with a plurality of connection holes;

[0024] The plurality of connection holes are all columnar countersunk holes, evenly arranged on the edge of the temperature measuring substrate (1-1), and are used for connecting the heat exchanger (2).

[0025] The temperature measuring element (1-2) further includes a signal line (1-2-2) for connecting to an external monitoring system or a temperature recording instrument;

[0026] The signal wire (1-2-2) is a metal wire, and the metal wire is wrapped with a PFA plastic sheath.

[0027] The upper surface of the temperature measuring substrate (1-1) contacts the power semiconductor device (4), and the lower surface thereof contacts the heat exchanger (2). The shape of the temperature measuring substrate (1-1) matches the shape of the heat exchanger (2).

[0028] The technical solution provided by the present invention has the following beneficial effects:

[0029] The multi-point measurement device for the shell temperature of a power semiconductor device provided by the present invention is arranged on a heat exchanger (2), and comprises a temperature measuring substrate (1-1) and a plurality of temperature measuring elements (1-2); the temperature measuring substrate (1-1) is mounted on the heat exchanger (2), and the plurality of temperature measuring elements (1-2) are mounted on the temperature measuring substrate (1-1); during measurement, the plurality of temperature measuring elements (1-2) are placed on the shell of the semiconductor power device and are used to perform multi-point measurement of the shell temperature of the power semiconductor device. The present invention utilizes the plurality of temperature measuring elements (1-2) to directly measure the shell temperature of the power semiconductor device, thereby simplifying the test process and improving the test efficiency and accuracy.

[0030] The multi-point measurement device for the shell temperature of a power semiconductor device provided by the present invention does not require the installation of an NTC resistor, does not increase the difficulty of chip packaging, and does not affect the reliability of the packaging structure;

[0031] The present invention realizes multi-point measurement of the shell temperature of a power semiconductor device by installing multiple temperature measuring elements (1-2) on a temperature measuring substrate (1-1). Corresponding temperature measuring elements can be arranged nearby according to the package layout position of the chip in the measured power semiconductor device. Then, temperature signals at different positions are connected to a monitoring system or a recording instrument via signal lines, so that the corresponding shell temperature distribution of multiple chips connected in parallel can be detected in real time.

[0032] The present invention can conveniently increase the number of chips and the temperature measurement points corresponding to their positions, accurately measure the temperature distribution of the heat transferred from the chip to the housing, and is beneficial to the study of the electrothermal characteristics of multiple chips in parallel;

[0033] The temperature measuring substrate of the present invention is not easily deformed by fine processing, and the internal V-shaped groove structure is arranged to effectively avoid the chip position, which has little effect on the electrical, thermal, mechanical and other performances of the device under test and is easy to process;

[0034] The 'F'-shaped groove design of the temperature measuring substrate in the present invention enables the temperature measuring element to be installed in a sliding manner. The spring compression force ensures the stability of the temperature measuring element installation position and the reliability of contact temperature measurement. The temperature measuring element will not affect the performance of the device under test.

[0035] The present invention can be used to measure the shell temperature of power semiconductor devices in different packaging forms, that is, it can meet the installation requirements of the measured power semiconductor devices in different packaging forms, has good versatility, has little effect on the surface stress of the installation shell of the power semiconductor device, is simple to process, and the installation and adjustment of the temperature measuring element are convenient and flexible, which can provide a basis for chip life prediction and reliability evaluation. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 1 is a schematic diagram of the installation of a multi-point measurement device for the shell temperature of a welding power semiconductor device according to an embodiment of the present invention;

[0037] Figure 2 1. This is a schematic diagram of the installation of a multi-point measurement device for the shell temperature of a press-fit power semiconductor device according to an embodiment of the present invention;

[0038] Figure 3 This is a three-dimensional diagram of the installation of the temperature measuring substrate and the heat exchanger in an embodiment of the present invention;

[0039] Figure 4 This is a cross-sectional view of the installation of the temperature measuring substrate and the heat exchanger in an embodiment of the present invention;

[0040] Figure 5 Schematic diagram of the upper surface of the temperature measuring substrate in an embodiment of the present invention;

[0041] Figure 6 2 is a schematic diagram of the lower surface of the temperature measuring substrate in an embodiment of the present invention;

[0042] Figure 7 2. This is a schematic diagram of the corresponding positions of the "F"-shaped groove and the chip layout in an embodiment of the present invention;

[0043] Figure 8 is a cross-sectional view of a temperature measuring substrate in an embodiment of the present invention;

[0044] Figure 9 This is an outline diagram of a temperature measuring element in an embodiment of the present invention;

[0045] Figure 10 is a cross-sectional view of a temperature measuring element in an embodiment of the present invention;

[0046] In the figure, 1. shell temperature multi-point measurement device, 2. heat exchanger, 3. fixture, 4. power semiconductor device under test, 5. chip in the power semiconductor device under test, 1-1. temperature measuring substrate, 1-2. multiple temperature measuring elements, 1-1-1. "F"-shaped groove, 1-1-2. positioning hole for positioning the power semiconductor device under test, 1-1-3. connecting hole for connecting the heat exchanger, 1-1-1-1. opening of the "F"-shaped groove on the upper surface of the temperature measuring substrate, 1-1-1-2. opening of the "F"-shaped groove on the lower surface of the temperature measuring substrate, 1-1-1-3. limiting groove, 1-2-1. temperature measuring probe, 1-2-2. signal line, 1-2-3. spring chamber, 1-2-4. compression spring. DETAILED DESCRIPTION

[0047] The present invention will be described in further detail below with reference to the accompanying drawings.

[0048] The embodiment of the present invention provides a multi-point measurement device for the shell temperature of a power semiconductor device. For a welding type power semiconductor device, the installation diagram of the multi-point measurement device 1 is as follows: Figure 1 As shown, for press-fit power semiconductor devices, the installation diagram of the shell temperature multi-point measurement device 1 is as follows Figure 2 As shown, the multi-point measuring device 1 is an independent temperature measuring component, which is set between the heat exchanger 2 and the power semiconductor device 4 to be measured through the fixture 3. The multi-point measuring device 1 can provide temperature measurement signals for the monitoring system and is also the main channel for heat conduction.

[0049] The multi-point measurement device for the shell temperature of a power semiconductor device provided in an embodiment of the present invention is arranged on a heat exchanger 2, and includes a temperature measurement substrate 1-1 and a plurality of temperature measurement elements 1-2;

[0050] like Figure 3 and Figure 4 As shown, the temperature measuring substrate 1-1 is installed on the heat exchanger 2, and multiple temperature measuring elements 1-2 are installed on the temperature measuring substrate 1-1; during measurement, multiple temperature measuring elements 1-2 are placed on the shell of the semiconductor power device to perform multi-point measurement of the shell temperature of the power semiconductor device.

[0051] like Figure 5 and Figure 6 As shown, the temperature measuring substrate 1-1 is provided with a plurality of longitudinal main grooves, and a plurality of transverse branch grooves are provided on each longitudinal main groove; each longitudinal main groove and the connected transverse branch grooves form a "F"-shaped groove 1-1-1, which passes through the upper and lower surfaces of the temperature measuring substrate 1-1, and one end of the "F"-shaped groove 1-1-1 is connected to the first transverse branch groove, and the other end thereof extends to the side surface of the temperature measuring substrate 1-1;

[0052] The temperature measuring element 1-2 is installed inside the V-shaped groove 1-1-1.

[0053] like Figure 9 and Figure 10 As shown, the temperature measuring element 1-2 is installed inside the V-shaped groove 1-1-1. The temperature measuring element 1-2 is a miniature compressible structure, which includes a temperature measuring probe 1-2-1, a spring chamber 1-2-3 and a compression spring 1-2-4;

[0054] The temperature measuring probe 1-2-1 includes a contact temperature measuring element, which is a thermocouple or a thermal resistor.

[0055] The temperature probe 1-2-1 has a boss structure at its upper end and an embedded groove at its lower end. The compression spring 1-2-4 is located inside the spring compartment 1-2-3. The spring compartment 1-2-3 is installed in the embedded groove, and the spring compartment 1-2-3 can be telescopically slid inside, so that the shell temperature of power semiconductor devices with different packaging forms can be measured.

[0056] The width of the opening 1-1-1-1 of the AV-shaped groove 1-1-1 on the upper surface of the temperature measuring substrate 1-1 is smaller than the width of the opening 1-1-1-2 on the lower surface of the temperature measuring substrate 1-1.

[0057] The upper end surface and lower cross section of the boss structure are both circular;

[0058] The diameter of the upper end surface is smaller than the diameter of the lower cross-section. The upper end surface represents the thin end of the boss structure, while the lower cross-section represents the thick end of the boss structure. The diameter of the upper end surface matches the opening width of the "F"-shaped groove 1-1-1 on the upper surface of the temperature measuring substrate 1-1, while the diameter of the lower cross-section matches the opening width of the "F"-shaped groove 1-1-1 on the lower surface of the temperature measuring substrate 1-1. That is, the opening width of the "F"-shaped groove 1-1-1 on the upper surface of the temperature measuring substrate 1-1 matches the upper end surface (i.e., the thin end) of the boss structure, while the opening width of the "F"-shaped groove 1-1-1 on the lower surface of the temperature measuring substrate 1-1 matches the lower end surface (i.e., the thick end) of the boss structure. In this embodiment of the present invention, the diameter of the upper end surface of the boss structure is 3 mm, and the diameter of its lower cross-section is 6 mm.

[0059] like Figure 8 As shown, the end of the transverse branch channel is a limiting groove 1-1-1-3, which is used to limit the temperature measuring element 1-2;

[0060] like Figure 7 As shown, the longitudinal main groove is located between adjacent chips 5 inside the power semiconductor device 4 under test, and the limiting groove 1-1-1-3 corresponds to the chip position, that is, the position design of the "F"-shaped groove 1-1-1 on the temperature measuring substrate 1-1 matches the arrangement of the chips 5 inside the power semiconductor device 4 under test.

[0061] The spring compartment 1-2-3 is a hollow cylindrical structure;

[0062] The lower end of the spring bin 1-2-3 is a hemispherical surface, and the upper end thereof is embedded in the recess. In the embodiment of the present invention, the spring bin 1-2-3 is made of copper.

[0063] The working load of the compression spring 1-2-4 is not less than 2N, and its working compression stroke is not less than 5mm. In the embodiment of the present invention, the compression spring 1-2-4 is made of stainless steel.

[0064] The temperature measuring substrate 1-1 is also provided with a plurality of positioning holes;

[0065] One of the positioning holes is located at the center of the upper surface of the temperature measuring substrate 1-1, and the remaining positioning holes are evenly and symmetrically distributed around the positioning hole located at the center of the upper surface of the temperature measuring substrate 1-1, that is, the remaining positioning holes are evenly and symmetrically distributed around the positioning hole located at the center of the upper surface of the temperature measuring substrate 1-1, and are used to position the power semiconductor device 4 under test. In the embodiment of the present invention, the positioning holes are blind holes with a diameter of 3.6 mm and a depth of 4 mm. There are three of them, of which the first positioning hole is located at the center of the upper surface of the temperature measuring substrate 1-1, and the remaining two are symmetrically distributed on both sides of the first positioning hole.

[0066] The temperature measuring substrate 1-1 is also provided with a plurality of connection holes;

[0067] The multiple connection holes are all columnar countersunk holes, evenly arranged on the edge of the temperature measuring substrate 1 - 1 , and are used to connect the heat exchanger 2 .

[0068] The temperature measuring element 1-2 also includes a signal line 1-2-2 for connecting to an external monitoring system or a temperature recording instrument;

[0069] Signal line 1-2-2 is a metal wire covered with a PFA plastic sheath.

[0070] The upper surface of the temperature measuring substrate 1-1 contacts the power semiconductor device 4, and its lower surface contacts the heat exchanger 2. The upper and lower surfaces have a roughness of Ra 0.4, a flatness of 0.005, and a parallelism of 0.015. The shape of the temperature measuring substrate 1-1 matches that of the heat exchanger 2. In this embodiment of the present invention, the length and width of the temperature measuring substrate 1-1 are identical to those of the heat exchanger 2, respectively, and the thickness of the temperature measuring substrate 1-1 is less than that of the heat exchanger 2.

[0071] In the embodiment of the present invention, the temperature measuring substrate 1-1 is 12 mm thick and is made of 6061 aluminum alloy. Its surface is chemically nickel-plated and has excellent electrical, thermal and mechanical properties. The temperature measuring substrate 1-1 is rectangular, has a moderate thickness, and is not easily deformed by fine processing.

[0072] The fixture 3 provides mounting and fixing conditions for the power semiconductor device shell temperature multi-point measurement device 1, the heat exchanger 2, and the power semiconductor device under test 4. The heat exchanger 2 uses a coolant or a heat medium to adjust the temperature of the power semiconductor device under test 4 through heat conduction.

[0073] The power semiconductor device 4 under test is a power semiconductor device with a welded or crimped package, having a large capacity and a large number of internally packaged chips.

[0074] The installation process of the multi-point shell temperature measurement device for the power semiconductor device provided in the embodiment of the present invention is as follows:

[0075] Contact the lower surface of the temperature measurement substrate 1-1 with the heat exchanger 2 and then fix it. Then, place the temperature measurement element 1-2 into the cross-shaped groove 1-1-1. There is an opening on the side surface of the temperature measurement substrate 1-1, so that the upper end of the temperature measurement probe 1-2-1 is embedded in the opening 1-1-1-1 on the upper surface of the cross-shaped groove 1-1-1 on the temperature measurement substrate 1-1 and exposes 1 mm above the upper surface of the temperature measurement substrate 1-1; make the lower end of the temperature measurement probe 1-2-1 embedded in the opening 1-1-1-2 on the lower surface of the cross-shaped groove 1-1-1 on the temperature measurement substrate 1-1, and the ball head of the spring chamber 1-2-3 contacts the heat exchanger 2. At this time, the compression spring 1-2-4 is compressed by 2.5 mm. Due to the pressure, the temperature measurement element 1-2 will not fall in the cross-shaped groove 1-1-1. Subsequently, according to the measurement needs, slide the temperature measurement element 1-2 along the cross-shaped groove 1-1-1 to the limit groove 1-1-1-3 and embed it in the limit groove 1-1-1-3. The temperature measurement probe 1-2-1 exposes 1.5 mm above the upper surface of the temperature measurement substrate 1-1. The specific number of the temperature measurement elements 1-2 can be determined according to the needs.

[0076] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Those of ordinary skill in the art can still modify or equivalently replace the specific implementation manners of the present invention according to the above embodiments. Any modifications or equivalent replacements that do not depart from the spirit and scope of the present invention are within the protection scope of the present invention pending approval.

Claims

1. A multi-point measurement device for the shell temperature of a power semiconductor device, characterized in that: It is arranged on a heat exchanger (2) and comprises a temperature measuring substrate (1-1) and a plurality of temperature measuring elements (1-2); The temperature measuring substrate (1-1) is mounted on the heat exchanger (2), and the plurality of temperature measuring elements (1-2) are mounted on the temperature measuring substrate (1-1); During measurement, the plurality of temperature measuring elements (1-2) are placed on the housing of the semiconductor power device to perform multi-point measurement of the housing temperature of the power semiconductor device; The temperature measuring substrate (1-1) is provided with a plurality of longitudinal main grooves, and each longitudinal main groove is provided with a plurality of transverse branch grooves; Each longitudinal main groove and the connected transverse branch groove form a "F"-shaped groove (1-1-1), the "F"-shaped groove (1-1-1) passes through the upper surface and the lower surface of the temperature measuring substrate (1-1), one end of the "F"-shaped groove (1-1-1) is connected to the first transverse branch groove, and the other end thereof extends outward to the side surface of the temperature measuring substrate 1-1; The temperature measuring element (1-2) is installed inside the V-shaped groove (1-1-1).

2. The multi-point measurement device for case temperature of a power semiconductor device according to claim 1, characterized in that: The temperature measuring element (1-2) is a miniature compressible structure, comprising a temperature measuring probe (1-2-1), a spring chamber (1-2-3) and a compression spring (1-2-4); The temperature measuring probe (1-2-1) comprises a contact temperature measuring element, the upper end of which is provided with a boss structure, and the lower end of which is provided with an embedded groove. The compression spring (1-2-4) is located inside the spring compartment (1-2-3), and the spring compartment (1-2-3) is installed in the embedded groove. The spring compartment (1-2-3) can be telescopically slid therein, and can measure the shell temperature of power semiconductor devices of different packaging forms.

3. The multi-point measurement device for case temperature of a power semiconductor device according to claim 2, characterized in that: The contact temperature measuring element is a thermocouple or a thermal resistor.

4. The multi-point measurement device for case temperature of a power semiconductor device according to claim 2, characterized in that: The opening width of the "F"-shaped groove (1-1-1) on the upper surface of the temperature measuring substrate (1-1) is smaller than the opening width of the groove on the lower surface of the temperature measuring substrate (1-1).

5. The multi-point measurement device for case temperature of a power semiconductor device according to claim 4, characterized in that: The upper end surface and lower cross section of the boss structure are both circular; The diameter of the upper end surface is smaller than the diameter of the lower section, the diameter of the upper end surface matches the opening width of the F-shaped groove (1-1-1) on the upper surface of the temperature measuring substrate (1-1), and the diameter of the lower section matches the opening width of the F-shaped groove (1-1-1) on the lower surface of the temperature measuring substrate (1-1).

6. The multi-point measurement device for case temperature of a power semiconductor device according to claim 1, characterized in that: The end of the transverse branch channel is a limiting groove (1-1-1-3) for limiting the temperature measuring element (1-2); The longitudinal main groove is located between adjacent chips inside the power semiconductor device (4) under test, and the limiting groove (1-1-1-3) corresponds to the position of the chip.

7. The multi-point measurement device for case temperature of a power semiconductor device according to claim 2, characterized in that: The spring compartment (1-2-3) is a hollow cylindrical structure; The lower end of the spring chamber (1-2-3) is a hemispherical surface, and the upper end thereof is embedded in the groove.

8. The multi-point measurement device for case temperature of a power semiconductor device according to claim 2, characterized in that: The working load of the compression spring (1-2-4) is not less than 2N, and its working compression stroke is not less than 5mm.

9. The multi-point measurement device for case temperature of a power semiconductor device according to claim 1, characterized in that: The temperature measuring substrate (1-1) is also provided with a plurality of positioning holes; One of the positioning holes is located at the center of the upper surface of the temperature measurement substrate (1-1), and the remaining positioning holes are evenly and symmetrically distributed around it, and are used for positioning the power semiconductor device (4) to be measured.

10. The multi-point measurement device for case temperature of a power semiconductor device according to claim 1, characterized in that: The temperature measuring substrate (1-1) is also provided with a plurality of connection holes; The plurality of connection holes are all columnar countersunk holes, evenly arranged on the edge of the temperature measuring substrate (1-1), and are used for connecting the heat exchanger (2).

11. The multi-point measurement device for case temperature of a power semiconductor device according to claim 2, characterized in that: The temperature measuring element (1-2) further includes a signal line (1-2-2) for connecting to an external monitoring system or a temperature recording instrument; The signal wire (1-2-2) is a metal wire, and the metal wire is wrapped with a PFA plastic sheath.

12. The multi-point measurement device for case temperature of a power semiconductor device according to claim 1, characterized in that: The upper surface of the temperature measuring substrate (1-1) is in contact with the power semiconductor device (4), and the lower surface thereof is in contact with the heat exchanger (2); The shape of the temperature measuring substrate (1-1) matches the shape of the heat exchanger (2).

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