Display device and display device manufacturing method

Abstract

A display device and a method for manufacturing the display device are disclosed. According to an embodiment, the display device may include: a base substrate; a circuit layer; a light-emitting element layer; a packaging layer; and a module hole. The light-emitting element layer may include a first electrode, a light-emitting layer, and a second electrode. Since the second electrode includes: a first portion that does not overlap with the module hole and has a first thickness; and a second portion that is arranged between the module hole and the first portion, and the thickness increases as it moves from the module hole to the first portion, the durability of the display device in a high temperature and humid environment can be improved.

Description

Technical Field

[0001] The present invention relates to a display device and a method for manufacturing the display device, and more particularly, to a display device with improved durability and a method for manufacturing the display device. Background Art

[0002] Recently, in order to accommodate electronic modules such as cameras in display devices, a technology for forming a hole that penetrates the display area of ​​a display module is being actively developed. However, when the hole is formed by a physical method, the following problems may occur: particles are generated in the electrode made of metal and damage the surrounding area, or the electrode is lifted and easily damaged by heat or moisture. Summary of the invention

[0003] An object of the present invention is to provide a display device having improved durability.

[0004] An object of the present invention is to provide a method for manufacturing a display device having improved durability.

[0005] A display device according to an embodiment may include a display area and a module hole area. The module hole area may be defined in the display area. The display device may include a base substrate, a circuit layer, a light emitting element layer, an encapsulation layer, and a module hole. The circuit layer may be arranged on the base substrate. The light emitting element layer may be arranged on the circuit layer. The light emitting element layer may include a first electrode, a second electrode arranged on the first electrode, and a light emitting layer arranged between the first electrode and the second electrode. The encapsulation layer may be arranged on the light emitting element layer. The module hole may overlap with the module hole area and be defined by passing through the base substrate, the circuit layer, and the light emitting element layer. The module hole may accommodate an electronic module. The second electrode may include a first portion and a second portion. The first portion may not overlap with the module hole and have a first thickness. The second portion may be arranged between the module hole and the first portion. The thickness of the second portion may increase as it approaches the first portion from the module hole.

[0006] The second electrode may include Ag (silver) and Mg (magnesium).

[0007] In the second portion, the Ag and the Mg may have an amorphous structure and a polycrystalline structure. In the first portion, the Ag and the Mg may have a polycrystalline structure.

[0008] In the second portion, a portion closer to the circuit layer may have a wider width.

[0009] In the first part, a molar ratio of the Ag to the Mg may be 95:5 to 85:15.

[0010] The second electrode may further include at least one of Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, and Ti. The second electrode may be a semi-transmissive electrode.

[0011] The electronic module may be a camera module or an infrared sensing module.

[0012] A display device according to an embodiment may include a display area and a module hole area. The module hole area may be defined in the display area. The display device may include a base substrate, a circuit layer, a light-emitting element layer, and a module hole. The circuit layer may be arranged on the base substrate. The light-emitting element layer may be arranged on the circuit layer. The light-emitting element layer may include a first electrode, a second electrode arranged on the first electrode, and a light-emitting layer arranged between the first electrode and the second electrode. The module hole may overlap with the module hole area. The module hole may be defined by penetrating the base substrate, the circuit layer, and the light-emitting element layer.

[0013] The second electrode may include Ag and Mg. The second electrode may include a first portion and a second portion. The first portion may not overlap with the module hole. The second portion may be arranged between the module hole and the first portion. In the first portion, the Ag and the Mg may have a polycrystalline structure. In the second portion, the Ag and the Mg may have an amorphous structure and a polycrystalline structure.

[0014] The first portion may have a uniform thickness. The thickness of the second portion may increase as it approaches the first portion from the module hole.

[0015] A molar ratio of Ag in the first portion based on the entire first portion may be different from a molar ratio of Ag in the second portion based on the entire second portion.

[0016] The method for manufacturing a display device according to an embodiment of the present invention may include the following steps: providing a base substrate; forming a circuit layer and a light-emitting element layer; forming an electrode hole; and forming a module hole. The step of providing the base substrate may be a step of providing a base substrate including a preliminary module hole area and a display area adjacent to the preliminary module hole area. The step of forming the circuit layer and the light-emitting element layer may be a step of forming a circuit layer arranged on the base substrate and a light-emitting element layer arranged on the circuit layer and including a first electrode, a light-emitting layer, and a second electrode stacked in sequence. The step of forming the electrode hole may be a step of electrolyzing the second electrode to form an electrode hole overlapping the preliminary module hole area. The step of forming the module hole may be a step of forming a module hole that passes through the base substrate, the circuit layer, and the light-emitting element layer.

[0017] The step of forming the electrode hole may include the step of electrolyzing the second electrode using an electrolysis device. The electrolysis device may include: a probe; a power supply part, a first connection part, and a second connection part. The probe may include a solid electrolyte part and a reduction part. The power supply part may include a cathode and an anode. The first connection part may connect the cathode and the probe. The second connection part may connect the anode and the second electrode.

[0018] The step of forming the electrode hole may include the steps of: contacting the solid electrolyte portion to a region of the second electrode overlapping the preliminary module hole region; electrically connecting the anode to the second electrode; and applying current from the power supply portion to the second electrode.

[0019] The second electrode includes Ag and Mg, and a molar ratio of the Ag to the Mg may be 95:5 to 85:15.

[0020] The step of defining the electrode holes may further include the step of heating the solid electrolyte portion. The step of heating the solid electrolyte portion may be the step of heating the solid electrolyte portion to 100°C to 200°C.

[0021] The solid electrolyte portion may include a solid electrolyte including Ag.

[0022] The step of forming the module hole may include the step of laser etching a region overlapping the preliminary hole region.

[0023] The solid electrolyte portion may have a cylindrical shape or a frustum shape.

[0024] A display device according to an embodiment of the present invention may have improved durability.

[0025] According to a method for manufacturing a display device according to an embodiment of the present invention, a display device with improved durability can be manufactured. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a perspective view of a display device according to an embodiment.

[0027] Figure 2 is an exploded perspective view of a display device according to an embodiment.

[0028] Figure 3a and Figure 3b is a cross-sectional view of a display module according to an embodiment.

[0029] Figure 4 is along Figure 2 A cross-sectional view of the display panel taken along line II'.

[0030] Figure 5 It is enlarged to show Figure 4 Magnified image of the BB region.

[0031] Figure 6 It is a sequence diagram of a method for manufacturing a display device according to an embodiment.

[0032] Figure 7 It is a sequence diagram of steps for electrolyzing the second electrode using an electrolysis device.

[0033] Figure 8a to Figure 8h 1 is a diagram showing steps of a method for manufacturing a display device according to an embodiment.

[0034] Figures 9a to 9e 1 is a diagram showing steps of a method for manufacturing a display device according to an embodiment.

[0035] Fig.10 It is a sequence diagram of steps of electrolyzing a second electrode using an electrolysis device according to an embodiment.

[0036] Fig.11 It is a diagram showing the procedure of heating the solid electrolyte portion.

[0037] Fig.12a and Figure 12b is a diagram showing a probe according to an embodiment.

[0038] Explanation of symbols

[0039] DD: Display device EL2: Second electrode

[0040] EL2-1: Part 1EL2-2: Part 2

[0041] ELD: Electrolysis Device PV: Probe

[0042] ET: Solid Electrolyte Department CM: Reduction Department DETAILED DESCRIPTION

[0043] In this specification, when a certain component (or region, layer, part, etc.) is mentioned as being "on" another component, "connected to" another component, or "combined with" another component, it means that it can be directly arranged / connected / combined on the other component, or a third component can be arranged between them.

[0044] The same reference numerals refer to the same components. In addition, in order to effectively explain the technical content, the thickness, ratio and size of the components are exaggerated in the drawings.

[0045] When "and / or" is mentioned, it means that all combinations of more than one that can be defined of the relevant components are included.

[0046] The terms first, second, etc. may be used to describe a variety of constituent elements, but the constituent elements should not be defined by the terms. The terms are only used to distinguish one constituent element from another constituent element. For example, without departing from the scope of the present invention, the first constituent element may be named as the second constituent element, and similarly, the second constituent element may be named as the first constituent element. Singular expressions include plural expressions as long as they do not clearly indicate different meanings in the context.

[0047] Furthermore, terms such as “below”, “lower side”, “above”, and “upper side” are used to describe the correlation between the components shown in the drawings. These terms are described as relative concepts based on the directions shown in the drawings.

[0048] Unless otherwise defined, all terms (including technical terms and scientific terms) used in this specification have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. Furthermore, terms such as those defined in commonly used dictionaries should be interpreted as having the same meaning as in the context of the relevant technology, and as long as they are not interpreted as ideal or excessively formal meanings, they should be interpreted as the meanings explicitly defined in this specification.

[0049] The terms "including" or "having" should be understood as intending to specify the existence of the features, numbers, steps, operations, constituent elements, parts or combinations thereof recorded in the specification, rather than excluding the existence or additional possibility of one or more other features or numbers, steps, operations, constituent elements, parts or combinations thereof in advance.

[0050] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0051] Figure 1 is a perspective view of a display device DD according to an embodiment. Figure 2 is an exploded perspective view of a display device DD according to an embodiment. Figure 3a and Figure 3b is a cross-sectional view of a display module according to an embodiment.

[0052] like Figure 1 As shown, the display device DD may display an image IM on the front. The front may be defined as a plane parallel to the plane defined by the first direction DR1 and the second direction DR2. The front includes a transmission area TA and a frame area BZA adjacent to the transmission area TA.

[0053] An image IM can be displayed in the transmission area TA of the display device DD. As an example of the image IM, Figure 1 The network search window is shown in FIG. The transmission area TA may have a quadrilateral shape parallel to the first direction DR1 and the second direction DR2. However, this is only an exemplary case, and the transmission area TA may have various shapes and is not limited to any one embodiment.

[0054] The frame area BZA is adjacent to the transmission area TA. The frame area BZA may surround the transmission area TA. However, this is only an exemplary case, and the frame area BZA may be arranged adjacent to only one side of the transmission area TA or may be omitted.

[0055] The display device DD may include various embodiments. For example, the display device DD may include a tablet computer, a laptop computer, a computer, a smart TV, etc. In one embodiment, a smart phone is used as an example to illustrate the display device DD.

[0056] The normal direction may correspond to the thickness direction DR3 (hereinafter referred to as the third direction) of the display device DD. In this embodiment, the top (or front) and bottom (or back) of each component are defined based on the direction in which the image IM is displayed. The top and bottom face each other in the third direction DR3.

[0057] In addition, the directions indicated by the first direction to the third direction DR1, DR2, and DR3 are relative concepts and can be transformed into other directions. Hereinafter, the first direction to the third direction refers to the directions indicated by the first direction to the third direction DR1, DR2, and DR3, respectively, and the same reference numerals will be used.

[0058] In addition, the display device DD according to the present invention can sense the user's input TC applied from the outside. The user's input TC includes various forms of external inputs such as a part of the user's body, light, heat or pressure. In this embodiment, the user's input TC is shown as the user's hand applied to the front. However, it is only an exemplary case, as described above, the user's input TC can be provided in various forms, and the display device DD can also sense the user's input TC applied to the side or back of the display device DD according to the structure of the display device DD, and is not limited to any one embodiment.

[0059] like Figure 1 and Figure 2 As shown, the display device DD may include a display module DM, a window WM, an electronic module EM and a storage component BM.

[0060] The display module DM may display an image IM and sense an external input TC. For example, the display module DM may include a display panel DP, DP1 and an input sensing unit ISU ( Figure 3a , Figure 3b ).

[0061] Reference Figure 2 , the display module DM may include a display area DA, a non-display area NDA, and a module hole area HA that can be divided on a plane.

[0062] In one embodiment, the display area DA is an area for displaying an image IM and can also be an area for sensing an external input TC. However, this is only an exemplary case, and within the display area DA, the area for displaying an image IM and the area for sensing an external input TC can also be separated from each other.

[0063] The non-display area NDA may be an area covered by the frame area BZA. The non-display area NDA is adjacent to the display area DA. The non-display area NDA may surround the display area DA. A driving circuit or driving wiring for driving the display area DA may be arranged in the non-display area NDA.

[0064] In the present embodiment, the display module DM is assembled into a flat state where the display area DA and the non-display area NDA face the window WM. However, this is only an exemplary case, and in the display module DM, a portion of the non-display area NDA may be bent. At this time, a portion of the non-display area NDA will face the back of the display device DD, so that the frame area BZA can be reduced in front of the display device DD. Alternatively, the display module DM may also be assembled into a state where a portion of the display area DA is also bent. Alternatively, in the display module DM according to an embodiment of the present invention, the non-display area NDA may also be omitted.

[0065] The edge of the module hole area HA may be surrounded by the display area DA. On a plane, the module hole area HA may be spaced apart from the non-display area NDA with the display area DA in between.

[0066] The module hole area HA may be an area where the module hole MH is defined. Accordingly, the module hole MH may be surrounded by the display area DA displaying the image IM on a plane. Details of the module hole MH will be described later.

[0067] The window WM may be arranged in front of the display module DM to protect the display module DM. For example, the window WM may include a glass substrate, a sapphire substrate, or a plastic film. The window WM may be a rigid substrate or a flexible substrate.

[0068] The window WM may be divided into a transmission area TA and a frame area BZA. The transmission area TA may be an area that transmits incident light. The transmission area TA may have a shape corresponding to the display area DA. For example, the transmission area TA may overlap the front of or at least a portion of the display area DA. The image IM displayed in the display area DA of the display module DM may be visible from the outside through the transmission area TA.

[0069] The bezel area BZA may be an area having a light transmittance lower than that of the transmission area TA. The bezel area BZA defines the shape of the transmission area TA. The bezel area BZA may be adjacent to the transmission area TA and surround the transmission area TA.

[0070] The frame area BZA may have a predetermined color. The frame area BZA may cover the non-display area NDA of the display module DM and block the non-display area NDA from being visible from the outside. In addition, this is an exemplary case, and in the window WM according to an embodiment of the present invention, the frame area BZA may also be omitted.

[0071] The receiving part BM may be combined with the window WM. The receiving part BM provides a back side of the display device DD. The receiving part BM may be combined with the window WM to define an inner space.

[0072] The storage member BM can stably protect the display device DD stored in the internal space from external impact. The display module DM and the electronic module EM can be stored in the internal space provided by the storage member BM.

[0073] Reference Figure 3a The display module DM may include a display panel DP and an input sensing unit ISU. The display panel DP includes a base substrate BSS, a circuit layer CL, a light emitting element layer LDL, and a thin film encapsulation layer TFE.

[0074] The display panel DP is not particularly limited, and may be, for example, a light-emitting display panel. The display panel DP may be an organic light-emitting display panel or a quantum dot light-emitting display panel. The light-emitting layer of the organic light-emitting display panel includes an organic light-emitting substance. The light-emitting layer of the quantum dot light-emitting display panel includes quantum dots or quantum rods. Hereinafter, the display panel DP is described as an organic light-emitting display panel.

[0075] The base substrate BSS may include a plastic substrate, a glass substrate, an organic / inorganic composite material substrate, or the like.

[0076] The circuit layer CL may include a plurality of insulating layers, a plurality of conductive layers, and a semiconductor layer. The plurality of conductive layers of the circuit layer CL may constitute signal wirings or a control circuit of a pixel.

[0077] The light emitting element layer LDL includes a display element, for example, an organic light emitting diode, but is not limited thereto, and may include an inorganic light emitting diode or an organic-inorganic hybrid light emitting diode according to the type of the display panel DP.

[0078] The thin film encapsulation layer TFE seals the light emitting element layer LDL. The thin film encapsulation layer TFE includes at least one insulating layer. The thin film encapsulation layer TFE according to an embodiment of the present invention may include at least one encapsulation organic film and at least one encapsulation inorganic film. For example, the thin film encapsulation layer TFE may have a structure in which a first encapsulation inorganic film, an encapsulation organic film, and a second encapsulation inorganic film are stacked in sequence.

[0079] The encapsulation inorganic film protects the light emitting element layer LDL from moisture / oxygen, and the encapsulation organic film protects the light emitting element layer LDL from foreign matter such as dust particles. The encapsulation inorganic film may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer, but is not particularly limited thereto. The encapsulation organic film may include an acrylic series organic film, but is not particularly limited thereto.

[0080] The input sensing unit ISU may be directly formed on the thin film encapsulation layer TFE through a continuous process. However, the embodiment is not limited thereto, and the input sensing unit ISU may be combined with the thin film encapsulation layer TFE through a bonding component. In this case, the input sensing unit ISU may include a base layer and a sensing circuit layer. The sensing circuit layer may include a plurality of insulating layers and a plurality of conductive layers. Figure 3b , the display module DM1 may include a display panel DP1 and an input sensing unit ISU. Figure 3a The display module DM shown, Figure 3b The display module DM1 shown is different only in the configuration of the package substrate ECL, and the other configurations may be substantially the same. Therefore, the following description will focus on the package substrate ECL.

[0081] The encapsulation substrate ECL seals the light emitting element layer LDL. The encapsulation substrate ECL may include glass. The encapsulation substrate ECL may have a rigid property. The encapsulation substrate ECL may protect the light emitting element layer LDL from foreign matter such as moisture, oxygen, and dust particles. The encapsulation substrate ECL may be combined with the base layer through a sealing part SLP. The sealing part SLP may include a frit. However, this is merely exemplary, and the material constituting the sealing part SLP is not limited thereto.

[0082] An input sensing unit ISU may also be arranged on the package substrate ECL. Figure 3b The configuration in which the encapsulation substrate ECL is included in the display panel DP1 has been described, but the encapsulation substrate ECL may also be defined as a configuration included in the input sensing unit ISU.

[0083] Although Figure 3b The case where the input sensing unit ISU is directly formed on the encapsulation substrate ECL through a continuous process is shown, but the embodiment is not limited thereto. For example, a bonding component (not shown) may be provided between the input sensing unit ISU and the encapsulation substrate ECL, and the input sensing unit ISU and the encapsulation substrate ECL may be combined by the bonding component. In addition, the bonding component may be an organic bonding layer such as an optically transparent bonding film (OCA: Optically Clear Adhesive film), an optically transparent bonding resin (OCR: Optically Clear Resin) or a pressure sensitive bonding film (PSA: Pressure Sensitive Adhesive film).

[0084] In this specification, the encapsulation layer may be used as a concept including both the thin film encapsulation layer TFE and the encapsulation substrate ECL.

[0085] Figure 4 is shown along Figure 2 A cross-sectional view of the display panel taken along line I-I'. Figure 4 In one embodiment, the display module DM may include a base substrate BSS, a circuit layer CL, a light emitting element layer LDL, and a packaging layer TFE.

[0086] The base substrate BSS may include a base layer BS and an auxiliary layer BL. The base layer BS may be an insulating substrate. The base layer BS may be provided in a flexible state. For example, the base layer BS may include polyimide (PI). Alternatively, the base layer BS may be provided in a rigid state. For example, the base layer BS may be composed of a variety of materials such as glass and plastic. The plastic substrate may include at least one of acrylic resin, methacrylic resin, polyisoprene, ethylene resin, epoxy resin, polyurethane resin, cellulose resin, siloxane resin, polyimide resin, polyamide resin, and perylene resin.

[0087] The auxiliary layer BL may be arranged on the base layer BS. The auxiliary layer BL may be directly formed on the base layer BS to cover the front surface of the base layer BS. The auxiliary layer BL may include an inorganic substance. The auxiliary layer BL may include a barrier layer and / or a buffer layer. Accordingly, the auxiliary layer BL may prevent oxygen or moisture flowing through the base layer BS from penetrating into the circuit layer CL or the light emitting element layer LDL, and may enable the circuit layer CL to be stably formed on the base layer BS.

[0088] The circuit layer CL may be disposed on the base substrate BSS. The circuit layer CL may include a transistor TR and first to third insulating layers 10, 20, 30 that insulate the transistor TR. The first to third insulating layers 10, 20, 30 may include organic and / or inorganic substances, respectively, and may have a single layer or a stacked structure.

[0089] Figure 4 The driving transistor is exemplarily shown as a transistor TR. The transistor TR may include a semiconductor pattern SP, a control electrode CE, an input electrode IE, and an output electrode OE. The semiconductor pattern SP may be arranged on a base substrate BSS. The semiconductor pattern SP may include a semiconductor material. The control electrode CE may be separated from the semiconductor pattern SP with a first insulating layer 10 in between. The control electrode CE may be connected to an electrode of a switching transistor (not shown) and a capacitor (not shown).

[0090] The input electrode IE and the output electrode OE may be separated from the control electrode CE via the second insulating layer 20. The input electrode IE and the output electrode OE of the transistor TR may pass through the first and second insulating layers 10 and 20 to be electrically connected to one side and the other side of the semiconductor pattern SP, respectively.

[0091] The third insulating layer 30 may be arranged on the second insulating layer 20 to cover the input electrode IE and the output electrode OE. In addition, in the transistor TR, the semiconductor pattern SP may also be arranged on the control electrode CE. Alternatively, the semiconductor pattern SP may also be arranged on the input electrode IE and the output electrode OE. Alternatively, the input electrode IE and the output electrode OE may also be arranged on the same layer as the semiconductor pattern SP and directly connected to the semiconductor pattern SP. The transistor TR according to an embodiment of the present invention may be formed into a variety of structures and is not limited to a certain embodiment.

[0092] The light emitting element layer LDL may be disposed on the circuit layer CL. The light emitting element layer LDL may include a light emitting element LD, which may include a first electrode EL1, a light emitting layer EML, and a second electrode EL2. The light emitting element layer LDL further includes a pixel definition layer PDL defining a pixel region.

[0093] The first electrode EL1 has conductivity. The first electrode EL1 may be formed using a metal alloy or a conductive compound. The first electrode EL1 may be an anode. Furthermore, the first electrode EL1 may be a pixel electrode. The first electrode EL1 may be a reflective electrode. The first electrode EL1 may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or a compound or mixture thereof (e.g., a mixture of Ag and Mg). The thickness of the first electrode EL1 may be about 1000 Å. To about For example, it can be approximately To about

[0094] The light emitting layer EML is disposed on the first electrode EL1. The light emitting layer EML may have, for example, approximately To about or approximately To about The light-emitting layer EML may have a single-layer structure composed of a single substance, a single-layer structure composed of a plurality of substances different from each other, or a multi-layer structure having a plurality of layers composed of a plurality of substances different from each other. The light-emitting layer EML may include an organic substance or a quantum dot as a light-emitting substance. In the case where the light-emitting layer EML includes an organic substance, it may include an anthracene derivative, a pyrene derivative, a fluoranthene derivative, Derivatives, dihydrobenzanthracene derivatives or triphenylene derivatives. In the case where the light-emitting layer EML includes quantum dots, the quantum dots may have a core-shell structure including a core and a shell surrounding the core. For example, the core of the quantum dot may be selected from II-VI group compounds, III-V group compounds, IV-VI group compounds, IV group elements, IV group compounds and combinations thereof.

[0095] The second electrode EL2 is disposed on the light emitting layer EML. The second electrode EL2 may be a common electrode or a cathode. The second electrode EL2 may be, for example, a semi-transmissive electrode.

[0096] In the case where the second electrode EL2 is a semi-transmissive electrode or a reflective electrode, the second electrode EL2 may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or a compound or mixture thereof (e.g., a mixture of Ag and Mg). Preferably, the second electrode EL2 may include Ag and Mg. For example, the second electrode EL2 may include only Ag and Mg. The thickness of the second electrode EL2 may be about 1000 Å. To about For example, it can be approximately To about

[0097] Although not shown, functional layers such as a hole injection layer, a hole transport layer, and an electron blocking layer may be arranged between the first electrode EL1 and the light-emitting layer EML, and a hole blocking layer, an electron transport layer, an electron injection layer, and the like may be arranged between the light-emitting layer EML and the second electrode EL2.

[0098] The encapsulation layer TFE may be arranged on the second electrode EL2 to cover the second electrode EL2. The encapsulation layer TFE may directly cover the second electrode EL2. The encapsulation layer TFE may include an organic layer including organic matter and an inorganic layer including inorganic matter. In one embodiment, a cap layer (not shown) covering the second electrode EL2 may also be arranged.

[0099] The module hole MH may penetrate the display module DM along the third direction DR3. The module hole MH may be a through hole connected from the front to the back of the display module DM. That is, the module hole MH may penetrate the base substrate BSS, the circuit layer CL, the light emitting element layer LDL, and the encapsulation layer TFE. However, the embodiment is not limited thereto. The module hole MH may not penetrate the base substrate BSS.

[0100] In one embodiment, when the thin film encapsulation layer TFE is replaced by arranging the encapsulation substrate ECL, the module hole MH may only penetrate one of the base substrate BSS and the encapsulation substrate ECL. In addition, the module hole MH may fully penetrate both the base substrate BSS and the encapsulation substrate ECL, or may not penetrate both the base substrate BSS and the encapsulation substrate ECL. The details will be described later.

[0101] The structure arranged on the back side of the display module DM and overlapping with the module hole MH can be seen through the module hole MH in front of the display module DM. In addition, in the present embodiment, although the module hole MH is illustrated as a cylindrical shape having a height in the third direction DR3, it is not limited thereto, and the module hole MH can be provided in various shapes such as a polygonal column, an elliptical column, and a frustum.

[0102] The module hole MH and the electronic module EM may overlap on a plane. That is, the module hole MH may receive the electronic module EM. The electronic module EM receives a signal input through the module hole MH and provides it to the display module DM. The electronic module EM may receive an external input through the module hole MH. The electronic module EM may be a module including a receiving portion having a size that can be received in the module hole MH or at least having a size similar to that of the module hole MH. The electronic module EM may be a sensing module such as a camera module, a speaker module, or an infrared sensing module. The electronic module EM may sense an external subject received through the module hole MH, or provide a sound signal such as voice to the outside through the module hole MH.

[0103] Although Figure 1 , Figure 2 as well as Figure 4 The case where there is one module hole MH is shown, but the embodiment is not limited thereto, and a plurality of module holes MH may be defined in the display module DM.

[0104] Figure 5 It is enlarged to show Figure 4 Magnified image of the BB region.

[0105] Reference Figure 5 In one embodiment, the second electrode EL2 may include a first portion EL2-1 and a second portion EL2-2. The first portion EL2-1 does not overlap with the module hole MH and may have a first thickness d1. The first portion EL2-1 may have a uniform thickness. The second portion EL2-2 may be arranged between the module hole MH and the first portion EL2-1.

[0106] The thickness of the second portion EL2-2 may increase as it moves from the module hole MH toward the first portion EL2-1. The second portion EL2-2 may extend from the first portion EL2-1 along the module hole MH. The second portion EL2-2 may have a shape that is integral with the first portion EL2-1. The second portion EL2-2 may extend from the first portion EL2-1 along the circuit layer CL. That is, the second portion EL2-2 may contact and extend with the circuit layer CL.

[0107] In the second portion EL2-2, the portion closer to the circuit layer CL may have a wider width. Here, the width refers to the length along the second direction DR2 perpendicular to the thickness direction (third direction) DR3. Figure 5 As shown, the second portion EL2-2 may be formed in a tapered shape. However, the embodiment is not limited thereto and may include a curved shape. Since the second portion EL2-2 according to an embodiment does not include a raised or rough portion (burr), it may have strong durability in a high temperature and humid environment.

[0108] In the first portion EL2-1, Ag and Mg may have a polycrystalline structure. In the second portion EL2-2, a portion of Ag and Mg may have an amorphous structure, and the remaining portion may have a polycrystalline structure.

[0109] The molar ratio of Ag of the first portion EL2-1 based on the entire first portion EL2-1 may be different from the molar ratio of Ag of the second portion EL2-2 based on the entire second portion EL2-2. In the first portion EL2-1, the molar ratio of Ag and Mg may be 95:5 to 85:15.

[0110] Below, refer to Figures 6 to 11 , a display device manufacturing method S1 according to an embodiment is described in detail. Figures 6 to 11 In the description of Figures 1 to 5 The same structure as described above can be used as long as there is no special mention Figures 1 to 5 The contents described in are the same as those described in , so detailed description is omitted.

[0111] Figure 6 It is a sequence diagram of a method S1 for manufacturing a display device according to an embodiment. Figure 7 It is a sequence diagram regarding the step (S31) of electrolyzing the second electrode using the electrolysis device. Figure 8a to Figure 8h 1 is a diagram showing steps of a method S1 for manufacturing a display device according to an embodiment. Figures 9a to 9e 1 is a diagram showing steps of a method S1 for manufacturing a display device according to an embodiment. Figure 8a to Figure 8h exemplarily shows an embodiment in which the display panel DP includes a thin film encapsulation layer TFE, Figures 9a to 9e An embodiment of a case where the display panel DP includes the encapsulation substrate ECL is exemplarily shown.

[0112] Reference Figure 6 According to an embodiment, a display device manufacturing method S1 may include the following steps: providing a base substrate (S10); forming a circuit layer and a light emitting element layer (S20); forming an electrode hole (S30); and forming a module hole (S40).

[0113] Reference Figure 6 and Figure 8a The step of providing a base substrate (S10) may be a step of providing a base substrate BSS including a preliminary module hole area PHA and a display area DA adjacent to the preliminary module hole area PHA. The step of forming a circuit layer and a light emitting element layer (S20) may be a step of forming a circuit layer CL disposed on the base substrate BSS and a light emitting element layer LDL disposed on the circuit layer CL and including a first electrode EL1, a light emitting layer EML, and a second electrode EL2 stacked in sequence.

[0114] Reference Figure 7 as well as Figure 8b to Figure 8d The step of forming the electrode hole (S30) may include the step of electrolyzing the second electrode using an electrolysis device (S31).

[0115] Reference Figure 8c , the electrolysis device ELD may include a probe PV, a power supply PS, a first connection CN1, and a second connection CN2. The probe PV may include a solid electrolyte portion ET and a reduction portion CM. The power supply PS may include a cathode EL2-PS and an anode EL1-PS. The first connection CN1 may connect the power supply PS and the probe PV. Specifically, the first connection CN1 may connect the cathode EL2-PS of the power supply PS and the reduction portion CM of the probe PV. Although not shown, the first connection CN1 may include a first signal line (not shown) connecting the cathode EL2-PS of the power supply PS and the reduction portion CM of the probe PV. The second connection CN2 may connect the power supply PS and the second electrode EL2. More specifically, the second connection CN2 may connect the anode EL1-PS of the power supply PS to the second electrode EL2. Although not shown, the second connection CN2 may include a second signal line (not shown) connecting the anode EL1-PS of the power supply PS and the second electrode EL2. Figure 8c2 shows that the second connection portion CN2 contacts the portion of the second electrode EL2 that overlaps the non-display area NDA to electrically connect the second electrode EL2 and the power supply portion PS. However, the embodiment is not limited thereto, and the position where the second connection portion CN2 contacts the second electrode EL2 is not particularly limited.

[0116] Reference Figure 7 The step (S31) of electrolyzing the second electrode using the electrolysis device may include the following steps: bringing the solid electrolyte portion into contact with an area of ​​the second electrode overlapping with the preparation module hole area (S31-1); electrically connecting the anode to the second electrode (S31-2); and applying current to the second electrode from the power supply portion (S31-3).

[0117] Figure 8a , a stacking relationship of a base substrate BSS, a circuit layer CL, and a light emitting element layer LDL provided by the step of providing a base substrate (S10) and the step of forming a circuit layer and a light emitting element layer (S20) is shown. Figure 8a , shows that a separate transistor TR, a first electrode EL1, and a light emitting layer EML are not arranged in the area overlapping the preliminary module hole area PHA. However, the embodiment is not limited thereto, and a separate transistor TR, a first electrode EL1, and a light emitting layer EML may also be arranged.

[0118] Figure 8b and Figure 8d The step of bringing the solid electrolyte part into contact with an area of ​​the second electrode overlapping the area of ​​the preliminary module hole (S31-1), the step of electrically connecting the anode of the power supply part to the second electrode (S31-2), and the step of applying current from the power supply part (S31-3) are shown. Figure 8b and Figure 8d , after the solid electrolyte part ET contacts a region of the second electrode EL2 overlapping the preliminary module hole region PHA, and the anode EL1-PS of the power supply part PS is electrically connected to the second electrode EL2, when current is applied from the power supply part, the electrode hole EL2-H can be formed. Specifically, Ag and Mg are oxidized at the second electrode EL2 to form Ag. + and Mg 2+ Cations, formed Ag + and Mg 2+ The cations can move to the reduction part CM along with the solid electrolyte. At this time, Ag with strong reducing power + It can receive electrons from the reduction part CM and be reduced to form a reduced metal RM. Figure 8d In the embodiment, the probe PV-1 includes the reduction portion CM, the reduction metal RM, and the solid electrolyte portion ET.

[0119] The solid electrolyte that the solid electrolyte portion ET may include is not particularly limited. However, preferably, the solid electrolyte portion ET may include a solid electrolyte containing Ag. For example, the solid electrolyte portion ET may include AgCl, AgBr, AgI, AgBr, which are not easily soluble in water but are easy to maintain a solid form. 2 S, Ag 2 CO 3 and Ag 2 SO 4 at least one of .

[0120] In the case where the solid electrolyte portion ET includes an electrolyte containing Ag as a solid electrolyte, the electrolysis speed of the second electrode EL2 including a large amount of Ag can be improved. In the process of Ag being ionized, the solid electrolyte portion ET needs to maintain electrical neutrality. In order to maintain the electrical neutrality of the solid electrolyte portion ET, each time Ag is ionized into Ag + At this time, when the solid electrolyte portion ET includes metal ions having a reducing power lower than that of Ag, the speed at which Ag is electrolyzed and ionized may be slow because the speed at which Ag is reduced to the reducing portion CM is slow.

[0121] In the case where the solid electrolyte portion ET of one embodiment includes Ag, since Ag + The reduction speed in the reduction part CM is fast, so the Ag of the second electrode EL2 can be electrolyzed quickly. For metals with a standard reduction potential higher than Ag, they may not be suitable for use as solid electrolytes due to problems such as process costs.

[0122] Unlike the embodiment of the present invention, in the case where the second electrode EL2 is removed by a laser etching method, the display device DD may be damaged due to particles generated when the second electrode EL2 is removed, or the second electrode EL2 may be warped. For example, the second electrode EL2 may be removed by laser in a tearing-like manner, thereby causing the second electrode EL2 to warp (for example, burrs). For example, the second electrode may have a reverse tapered shape or the laser contact portion of the second electrode EL2 may be torn and easily warp. Therefore, the display device DD may be easily damaged in a high temperature and humid environment, resulting in reduced durability.

[0123] In the display device manufacturing method S1 of one embodiment, since the second electrode EL2 is removed by electrolysis, no particles are generated when the second electrode EL2 is removed during the process of forming the electrode hole EL2-H. Therefore, damage to the display device DD caused by the generation of particles can be prevented. In addition, the phenomenon of the second electrode EL2 being lifted can be prevented. For example, the cross-section of the second electrode EL2 formed by electrolysis can be formed into a smooth straight line or curve shape. Specifically, the second electrode EL2 is as shown in FIG. Figure 5 The display device DD may also be formed into a smooth tapered shape. Therefore, the display device DD manufactured by the display device manufacturing method S1 of an embodiment can improve durability.

[0124] Reference Figure 8d In the case where the second electrode EL2 is electrolyzed by the display device manufacturing method S1 of an embodiment, the second electrode EL2 may be formed to include a first portion EL2-1 ( Figure 5 ) and Part II EL2-2( Figure 5 During the electrolysis process, the portion in contact with the solid electrolyte portion ET and the portion adjacent to the solid electrolyte portion ET are affected by the electrolysis, and the polycrystalline structure is destroyed, thereby having an amorphous structure. For example, since the second portion EL2-2 ( Figure 5 ) is a portion arranged adjacent to the solid electrolyte portion ET during the manufacturing process, and therefore, a portion of the polycrystalline structure may be destroyed to have an amorphous structure. That is, in the second portion EL2-2 ( Figure 5 ), the portion where electrolysis does not occur will maintain a polycrystalline structure, and the portion where electrolysis occurs due to the influence of electrolysis (i.e., the portion where electrolysis occurs but is not completely performed) may have an amorphous structure. In addition, the first portion EL2-1 ( Figure 5 ) can maintain a polycrystalline structure,

[0125] The second portion EL2-2 affected by electrolysis may have a ratio different from the ratio of Ag and Mg of the second electrode EL2 before electrolysis. Since the first portion EL2-1 is not affected by electrolysis, it may have the same ratio as the ratio of Ag and Mg of the second electrode EL2 before electrolysis. Therefore, the molar ratio of Ag in the first portion EL2-1 based on the entire first portion EL2-1 may be different from the molar ratio of Ag in the second portion EL2-2 based on the entire second portion EL2-2. For example, during the electrolysis process, since the fast-reactive Mg decomposes faster than Ag, the molar ratio of Ag in the second portion EL2-2 may be greater than the molar ratio of Ag in the first portion EL2-1.

[0126] Reference Figure 6 , Figure 8e to Figure 8gThe step ( S40 ) of forming the module hole may include the step ( S40 ) of penetrating the circuit layer CL and the light emitting element layer LDL.

[0127] Figure 8e and Figure 8f The step (S40) of forming a preliminary module hole by laser etching the area overlapping with the preliminary module hole area PHA is shown. Figure 8e and Figure 8f The step of forming the preliminary module hole (S40) may be a step of laser etching the area overlapping with the preliminary module hole area PHA. The area overlapping with the preliminary module hole area PHA may be irradiated with laser to penetrate the light emitting element layer LDL, the circuit layer CL and the auxiliary layer BL. Accordingly, the preliminary module hole MH-P penetrating the light emitting element layer LDL, the circuit layer CL and the auxiliary layer BL may be defined.

[0128] Figure 8g The steps of forming the thin film encapsulation layer TFE are shown. Figure 8h The step of forming the module hole MH1 by laser etching the area overlapping with the preliminary module hole area PHA is shown.

[0129] Reference Figure 8g After the preliminary module holes MH-P are defined, a thin film encapsulation layer TFE may be arranged. As mentioned above, the thin film encapsulation layer TFE may be a multilayer structure including an organic layer and an inorganic layer, and may be a structure in which the organic layer and the inorganic layer are alternately stacked.

[0130] Reference Figure 8h The thin film encapsulation layer TFE can be penetrated by irradiating a laser to the area overlapping with the module hole area HA. ​​Accordingly, a module hole MH1 penetrating the thin film encapsulation layer TFE, the light emitting element layer LDL, the circuit layer CL and the auxiliary layer BL can be defined in the display panel DP.

[0131] The module hole area HA may have an area narrower than the preliminary module hole area PHA. The module hole area HA may be an area surrounded by the preliminary module hole area PHA. Therefore, even if the thin film encapsulation layer TFE is removed by irradiating the module hole area HA with laser, the circuit layer CL and the light emitting element layer LDL may be covered by the thin film encapsulation layer TFE.

[0132] Although not shown, the base layer BS may be further penetrated by irradiating a laser to an area overlapping with the module hole area HA. ​​Accordingly, a module hole MH (MH) penetrating the thin film encapsulation layer TFE, the light emitting element layer LDL, the circuit layer CL and the base substrate BSS may be defined in the display panel DP. Figure 4 ).

[0133] Below, refer to Figures 9a to 9e, a display device manufacturing method S1 according to an embodiment is described.

[0134] Reference Figure 9a and Figure 9b , can be obtained by referring to Figures 8a to 8e The electrode hole EL2-H is formed by the same method as described above. Figure 8e to Figure 8f The module hole MH2 is formed in the same manner as described above.

[0135] Reference Fig.9c , thereafter, the encapsulation substrate ECL may be arranged on the light emitting element layer LDL. As mentioned above, the encapsulation substrate ECL may include glass. The encapsulation substrate ECL may have a rigid property. The encapsulation substrate ECL may protect the light emitting element layer LDL from foreign matter such as moisture, oxygen, and dust particles.

[0136] A filling layer ASL may be defined between the encapsulation substrate ECL and the light emitting element layer LDL. The filling layer ASL may be defined by the space between the encapsulation substrate ECL and the light emitting element layer LDL. The filling layer ASL may include an inert gas. The filling layer ASL prevents the diffusion of foreign matter existing between the base substrate BSS and the encapsulation substrate ECL. The module hole MH2 may also be filled with an inert gas. Fig.9c The module hole MH2 may be defined by a portion that does not overlap with the light emitting element layer LDL and the circuit layer CL. The filling layer ASL may be defined by a portion that overlaps with the light emitting element layer LDL and the circuit layer CL.

[0137] Reference Figure 9d In one embodiment, the step of arranging a packaging component SM along the edge of the module hole MH3 may be further included. The packaging component SM may be arranged before bonding the packaging substrate ECL. The packaging component SM may cover the light emitting element layer LDL, the circuit layer CL, and the auxiliary layer BL exposed due to the module hole MH3. The packaging component SM may include the same material as the sealing component SLP, and may be arranged in the same step as the step of arranging the sealing component SLP. Figure 9d The module hole MH3 and the filling layer ASL may be defined with the package part SM as a boundary. The module hole MH3 may also be filled with an inert gas.

[0138] Reference Fig.9e, and may further include the step of irradiating the encapsulation substrate ECL and the base layer BS with laser. In the encapsulation substrate ECL and the base layer BS, the module hole MH4 may be defined by irradiating the laser to a portion overlapping with the module hole area HA and not overlapping with the encapsulation component SM. Compared with the case where the encapsulation substrate ECL and the base layer BS are not removed, in the case where the encapsulation substrate ECL and the base layer BS are further removed to define the module hole MH4, the transmittance of the module hole MH4 may be improved. In the case where the display device DD further includes the encapsulation component SM, the encapsulation component SM may be arranged at the edge of the module hole area HA.

[0139] Fig.10 It is a sequence diagram of a step ( S31 ) of electrolyzing a second electrode using an electrolysis device according to an embodiment. Fig.11 It is a diagram showing the procedure of heating the solid electrolyte portion.

[0140] Reference Fig.10 and Fig.11 In the display device manufacturing method S1, the step (S31) of electrolyzing the second electrode using the electrolysis device may further include the step (S31-10) of heating the solid electrolyte portion. The step (S31-10) of heating the solid electrolyte portion may be a step before the step (S31-3) of applying current from the power supply portion. For example, the step (S31-10) of heating the solid electrolyte portion may be a step before the step (S31-3) of applying current from the power supply portion.

[0141] Since Ag has a standard reduction potential of about 0.8 V (volts), the oxidation speed may be slow. In one embodiment, when the solid electrolyte in contact with the second electrode EL2 is heated, the reaction speed may be accelerated, so the speed at which Ag is oxidized may become faster. Therefore, the process cost can be reduced.

[0142] Although not shown, the first connection portion CN1 ( Figure 8c ) may include a third signal line (not shown) that transmits the heating signal transmitted by the power supply part PS to the solid electrolyte part ET or the reduction part CM.

[0143] Fig.12a and Figure 12b is a diagram showing a probe PV according to an embodiment.

[0144] Reference Fig.12a and Figure 12b , the solid electrolyte portion ET may have a cylindrical shape or a frustum shape. Fig.12a The case where the solid electrolyte portion ET has a cylindrical shape is exemplarily shown, Figure 12bAlthough the solid electrolyte portion ET is exemplarily shown as having a truncated cone shape, the shape of the solid electrolyte portion ET is not limited thereto, and may be a polygonal pyramid shape such as a triangular pyramid, a quadrangular pyramid, or a pentagonal pyramid.

[0145] In the case where the solid electrolyte portion ET in one embodiment has a cylindrical or frustum shape, as Figure 4 As shown in FIG. 1 , the second portion EL2-2 may be formed without being warped. More preferably, in the case where the solid electrolyte portion ET has a truncated cone shape, as shown in FIG. Figure 5 As shown, the second portion EL2-2 may not be warped but may be formed in a tapered shape. Therefore, the damage rate of the display device DD may be slowed down in a high temperature and humid environment, and the durability of the display device DD may be improved.

[0146] In the display device DD manufactured by the display device manufacturing method S1 according to an embodiment, the thickness of the second portion EL2-2 of the second electrode EL2 may increase as it approaches the first portion EL2-1 from the module hole MH. The second portion EL2-2 may contact and extend with the circuit layer CL along the circuit layer CL from the first portion EL2-1. In the second portion EL2-2, the portion closer to the circuit layer CL may have a wider width. Therefore, the display device DD according to an embodiment may have strong durability in a high temperature and humid environment.

[0147] According to the display device manufacturing method S1 of an embodiment, the second electrode EL2 may be formed by electrolysis. Therefore, no particles are generated during the process, and the second electrode EL2 may be prevented from warping or having rough portions (burrs), so that a display device DD having high durability may be manufactured.

[0148] Although the invention has been described with reference to the embodiments, it will be understood by those skilled in the art that various modifications and changes may be made to the invention without departing from the scope of the concept and field of the invention as described in the claims. Furthermore, the embodiments disclosed in the invention are not intended to limit the technical concept of the invention, and should be interpreted as the scope of the invention including all technical concepts within the scope of the claims and equivalents thereof.

Claims

1. A display device comprising a display area and a module hole area defined in the display area, wherein: include: base substrate; A circuit layer is arranged on the base substrate; a light emitting element layer, arranged on the circuit layer, and comprising a first electrode, a second electrode arranged on the first electrode, and a light emitting layer arranged between the first electrode and the second electrode; An encapsulation layer, arranged on the light-emitting element layer; as well as a module hole overlapping the module hole area and being defined so as to penetrate the circuit layer and the light emitting element layer, The second electrode includes: a first portion that does not overlap with the module hole and has a first thickness; and a second portion that is arranged between the module hole and the first portion, and whose thickness increases from the module hole toward the first portion. The second electrode includes Ag and Mg, A molar ratio of Ag in the first portion based on the entire first portion is different from a molar ratio of Ag in the second portion based on the entire second portion.

2. The display device according to claim 1, wherein: In the second portion, the Ag and the Mg have an amorphous structure and a polycrystalline structure.

3. The display device according to claim 2, wherein: In the first portion, the Ag and the Mg have a polycrystalline structure.

4. The display device according to claim 1, wherein: In the second portion, a portion closer to the circuit layer has a wider width.

5. The display device according to claim 1, wherein: In the first part, a molar ratio of the Ag to the Mg is 95:5 to 85:

15.

6. The display device according to claim 1, wherein: The second electrode also includes at least one of Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo and Ti.

7. The display device according to claim 1, wherein: The second electrode is a semi-transmissive electrode.

8. The display device according to claim 1, wherein: Also includes: an electronic module arranged in a plane overlapping with the module hole, Wherein, the electronic module is a camera module or an infrared sensing module.

9. A display device comprising a display area and a module hole area defined in the display area, the display device comprising: base substrate; A circuit layer is arranged on the base substrate; a light emitting element layer, arranged on the circuit layer, and comprising a first electrode, a second electrode arranged on the first electrode, and a light emitting layer arranged between the first electrode and the second electrode; as well as a module hole overlapping the module hole area and defined by penetrating the circuit layer and the light emitting element layer, The second electrode includes Ag and Mg, and includes: a first portion that does not overlap with the module hole; and a second portion that is arranged between the module hole and the first portion. In the first portion, the Ag and the Mg have a polycrystalline structure, In the second portion, the Ag and the Mg have an amorphous structure and a polycrystalline structure, The second electrode includes Ag and Mg, A molar ratio of Ag in the first portion based on the entire first portion is different from a molar ratio of Ag in the second portion based on the entire second portion.

10. The display device according to claim 9, wherein: The first portion has a uniform thickness, and the thickness of the second portion increases as it goes from the module hole toward the first portion.

11. A method for manufacturing a display device, comprising the following steps: providing a base substrate including a preliminary module hole area and a display area adjacent to the preliminary module hole area; forming a circuit layer disposed on the base substrate and a light-emitting element layer disposed on the circuit layer and including a first electrode, a light-emitting layer, and a second electrode stacked in sequence; electrolyzing the second electrode to form an electrode hole overlapping the hole area of ​​the preparation module; as well as forming a module hole penetrating the circuit layer and the light emitting element layer, The second electrode comprises: a first portion that does not overlap the module hole and has a first thickness; and a second portion disposed between the module hole and the first portion and having a thickness increasing from the module hole toward the first portion, The second electrode includes Ag and Mg, A molar ratio of Ag in the first portion based on the entire first portion is different from a molar ratio of Ag in the second portion based on the entire second portion.

12. The method for manufacturing a display device according to claim 11, wherein: The step of forming the electrode hole comprises the step of electrolyzing the second electrode using an electrolysis device, Wherein, the electrolysis device comprises: A probe including a solid electrolyte portion and a reduction portion; A power supply unit, including a cathode and an anode; a first connecting portion connecting the cathode and the probe; and The second connecting portion connects the anode and the second electrode.

13. The method for manufacturing a display device according to claim 12, wherein: The step of forming the electrode hole comprises the following steps: bringing the solid electrolyte portion into contact with a region of the second electrode overlapping with the reserve module hole region; electrically connecting the anode to the second electrode; and A current is applied from the power supply section to the second electrode.

14. The method for manufacturing a display device according to claim 11, wherein: The second electrode includes Ag and Mg, and a molar ratio of the Ag to the Mg is 95:5 to 85:

15.

15. The method for manufacturing a display device according to claim 12, wherein: The step of forming the electrode hole also includes the following steps: The solid electrolyte portion is heated to 100°C to 200°C.

16. The method for manufacturing a display device according to claim 12, wherein: The solid electrolyte portion includes a solid electrolyte including Ag.

17. The method for manufacturing a display device according to claim 11, wherein: The step of forming the module hole comprises the following steps: The area overlapping the preliminary module hole area is laser etched.

18. The method for manufacturing a display device according to claim 12, wherein: The solid electrolyte portion has a cylindrical shape or a truncated cone shape.

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