Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic device

Abstract

The present invention provides a solid-state imaging device, a method for manufacturing a solid-state imaging device, and an electronic device that have less crosstalk between adjacent sub-pixels, can suppress the influence of brightness shadows, and can suppress the decrease in sensitivity of the optical center. The multi-pixel MPXL20 includes: a back separation portion 250 that separates a plurality of adjacent sub-pixels; and a lens portion 220 that includes a microlens MCL221 that allows light to enter the photoelectric conversion regions 211 to 214 of the sub-pixels SPXL11, SPXL12, SPXL21, and SPXL22, the optical center of the microlens is configured in a manner that is located at the formation position of the first back separation portion 250, and the first back separation portion 250 is formed in a manner that is low in reflection at least in the optical center region compared to other back separation region regions.

Description

Technical Field

[0001] The present invention relates to a solid-state imaging device, a method for manufacturing the solid-state imaging device, and electronic equipment. Background Art

[0002] Complementary Metal Oxide Semiconductor (CMOS) image sensors have been put into practical use as solid-state imaging devices (image sensors) using photoelectric conversion elements that detect light and generate electric charges.

[0003] CMOS image sensors are widely used as a part of various electronic devices such as digital cameras, video cameras, surveillance cameras, medical endoscopes, personal computers (PCs), and portable terminal devices (mobile devices) such as mobile phones.

[0004] CMOS image sensors generally use three primary color filters of red (R), green (G), and blue (B) or four complementary color filters of cyan, magenta, yellow, and green to capture color images.

[0005] Generally speaking, in a CMOS image sensor, a pixel (pixel1) includes a filter separately. The sub-pixel group of the filter is arranged in two dimensions as a unit RGB sub-pixel group, i.e., a multi-pixel (multi pixel), and the sub-pixel group is arranged in a square shape with four filters, namely, a red (R) filter that mainly transmits red light, a green (Gr, Gb) filter that mainly transmits green light, and a blue (B) filter that mainly transmits blue light.

[0006] In addition, the incident light to the CMOS image sensor is received by the photodiode through the filter. The photodiode receives light in a wider wavelength range (380nm to 1100nm) than the visible range of humans (about 380nm to 780nm) and generates signal charge, so errors in the infrared light part will occur, and color reproducibility will decrease.

[0007] Therefore, infrared light is generally removed in advance by an infrared cut filter (IR cut filter).

[0008] However, the IR cut filter also attenuates visible light by about 10% to 20%, thereby reducing the sensitivity of the solid-state imaging device and causing degradation in image quality.

[0009] A sensor (solid-state imaging device) has been proposed (see, for example, Patent Document 1).

[0010] The sub-pixel group of the CMOS image sensor is arranged in two dimensions as a unit RGBIR sub-pixel group, i.e., a multi-pixel. The sub-pixel group is arranged in a square and includes an R sub-pixel including a red (R) filter that mainly transmits red light, a G sub-pixel including a green (G) filter that mainly transmits green light, a B sub-pixel including a blue (B) filter that mainly transmits blue light, and a dedicated near-infrared (NIR, such as 850nm, 940nm) sub-pixel for receiving infrared light, or a monochrome infrared (M-NIR, such as 500nm~955nm) sub-pixel that receives monochrome (Monochrome: M) and infrared light.

[0011] In the case of NIR, the filter can cut off IR at a selected wavelength, or pass IR of a pre-specified wavelength band. In the case of IR cutoff, the filter blocks the specified wavelength from entering the image sensor. In the case of IR pass, the filter only passes IR light of a selected wavelength band.

[0012] In addition, any sub-pixel within a multi-pixel can include one or more on-chip color filter layers. For example, any sub-pixel can have a double-layer color filter structure formed by combining a NIR filter having IR cutoff or pass characteristics at a specific wavelength or wavelength band with an R, G, or B layer.

[0013] This CMOS image sensor functions as a so-called NIR-RGB sensor capable of obtaining an NIR image and an RGB image.

[0014] This CMOS image sensor corrects the output signals of sub-pixels that receive red, green, and blue light using the output signals of sub-pixels that receive infrared light, thereby achieving high color reproducibility without using an IR cut filter.

[0015] In addition, as an infrared (IR, NIR) sensor, there is known an infrared (IR, NIR) sensor in which a unit sub-pixel group, ie, four sub-pixels of a multi-pixel are formed by one NIR reception dedicated pixel having a large pixel size.

[0016] Figure 1 (A) to (C) are diagrams schematically showing a first configuration example of a solid-state imaging device (CMOS image sensor) including a microlens for each sub-pixel.

[0017] Figure 1 (A) is a diagram showing a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as a NIR-RGB sensor in a plan view.

[0018] Figure 1(B) Yes Figure 1 (A) is a simplified cross-sectional view along the line x1-x2.

[0019] Figure 1 (C) Yes Figure 1 (A) is a simplified cross-sectional view along the line y1-y2.

[0020] exist Figure 1 In the solid-state imaging device 1, the multi-pixel MPXL1 includes a G sub-pixel SPXLG including a green (G) filter FLT-G that mainly transmits green light, an R sub-pixel SPXLR including a red (R) filter FLT-R that mainly transmits red light, a B sub-pixel SPXLB including a blue (B) filter FLT-B that mainly transmits blue light, and a dedicated near-infrared (NIR) sub-pixel SPXLNI for receiving infrared light, which are arranged in a square shape into 2 rows and 2 columns.

[0021] An antireflection film ARL is formed between the light incident surface of the photoelectric conversion region PD(1 to 4) of the multi-pixel MPXL1 and the light emitting side surface of each filter.

[0022] The photoelectric conversion region PD of the multi-pixel MPXL1 is separated (divided) into a first photoelectric conversion region PD1, a second photoelectric conversion region PD2, a third photoelectric conversion region PD3 and a fourth photoelectric conversion region PD4 in its light incident part corresponding to each sub-pixel SPXLG, SPXLR, SPXLB, SPXLNI.

[0023] Specifically, the photoelectric conversion region PD is divided into four parts at the light incident portion thereof by a back side metal (Back Side Metal) BSM as a back side separation portion.

[0024] exist Figure 1 In the example of FIG. 1 , the back metal BSM is formed at the boundary portion of each sub-pixel SPXLG, SPXLR, SPXLB, and SPXLNI so as to protrude from the anti-reflection film ARL toward the filter side.

[0025] In addition, in the photoelectric conversion region PD, a backside deep trench isolation (BDTI) as a trench-type backside isolation is formed so as to overlap with the backside metal BSM in the depth direction of the photoelectric conversion region PD.

[0026] Thus, the sub-pixel SPXLG includes the first photoelectric conversion region PD1, the sub-pixel SPXLR includes the second photoelectric conversion region PD2, the sub-pixel SPXLB includes the third photoelectric conversion region PD3, and the sub-pixel SPXLNI includes the fourth photoelectric conversion region PD4.

[0027] Furthermore, in the solid-state imaging device 1 , microlenses MCL1 , MCL2 , MCL3 , and MCL4 are arranged on the light incident surface side of each filter in each sub-pixel region.

[0028] Microlens MCL1 allows light to enter the first photoelectric conversion region PD1 of sub-pixel SPXLG, microlens MCL2 allows light to enter the second photoelectric conversion region PD2 of sub-pixel SPXLR, microlens MCL3 allows light to enter the third photoelectric conversion region PD3 of sub-pixel SPXLB, and microlens MCL4 allows light to enter the fourth photoelectric conversion region PD4 of sub-pixel SPXLNI.

[0029] Figure 2 (A) and (B) are diagrams schematically showing second and third configuration examples of a solid-state imaging device (CMOS image sensor) including a microlens for each sub-pixel.

[0030] Figure 2 (A) is a diagram showing in plan a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as an RGB sensor.

[0031] Figure 2 (B) is a diagram showing in plan a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as an M-NIR sensor.

[0032] exist Figure 2 In the multi-pixel MPXL1A of the solid-state imaging device 1A of (A), a G sub-pixel SPXLG is arranged instead of Figure 1 The near-infrared (NIR) sub-pixel SPXLNI of the multi-pixel MPXL1.

[0033] exist Figure 2 In the multi-pixel MPXL1B of the solid-state imaging device 1B of (B), M sub-pixels SPXLM are arranged and one microlens MCL5 is arranged instead of the G sub-pixels SPXLG and the R sub-pixels SPXLR in the same row.

[0034] The NIR sub-pixel SPXLNI is arranged across two sub-pixel regions, and one microlens MCL6 is arranged instead of the B sub-pixel SPXLB.

[0035] Figure 3 (A) to (C) are diagrams schematically showing a fourth configuration example of a solid-state imaging device (CMOS image sensor) in which a plurality of sub-pixels share one microlens.

[0036] Figure 3(A) is a diagram showing a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as a NIR-RGB sensor in a plan view.

[0037] Figure 3 (B) Yes Figure 3 (A) is a simplified cross-sectional view along the line x1-x2.

[0038] Figure 3 (C) Yes Figure 3 (A) is a simplified cross-sectional view along the line y1-y2.

[0039] Figure 3 The multi-pixel MPXL1C of the solid-state imaging device 1C of (A) is configured such that four sub-pixels SPXLG, SPXLR, SPXLB, and SPXLNI arranged in a 2×2 square shape share one microlens MCL7.

[0040] Figure 4 (A) and (B) are diagrams schematically showing fifth and sixth configuration examples of a solid-state imaging device (CMOS image sensor) in which a plurality of sub-pixels share one microlens.

[0041] Figure 4 (A) is a diagram showing in plan a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as an RGB sensor.

[0042] Figure 4 (B) is a diagram showing in plan a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as an M-NIR sensor.

[0043] Figure 4 The multi-pixel MPXL1D of the solid-state imaging device 1D of (A) is configured such that four sub-pixels SPXLG, SPXLR, SPXLB, and SPXLG arranged in a 2×2 square share one microlens MCL8.

[0044] Figure 4 The multi-pixel MPXL1E of the solid-state imaging device 1E of (B) is configured such that two sub-pixels SPXLM and SPXLNI arranged in a 2×2 square area share one microlens MCL9.

[0045] Prior art literature

[0046] Patent Literature

[0047] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-139286 SUMMARY OF THE INVENTION

[0048] Technical Problems to be Solved by the Invention

[0049] like Figure 1 and Figure 2 The solid-state imaging device (CMOS image sensor) including a microlens in each sub-pixel shown has advantages and disadvantages as described below.

[0050] (advantage)

[0051] There is little crosstalk between adjacent sub-pixels.

[0052] The microlens coincides with the optical center of the photoelectric conversion region (photodiode) PD, and thus symmetrical brightness shading can be obtained.

[0053] (shortcoming)

[0054] Due to the gaps between different microlenses, the responsiveness is low.

[0055] Unable to obtain distance information and cannot have PDAF (Phase Detection Auto Focus) function.

[0056] In addition, if Figure 3 and Figure 4 The solid-state imaging device (CMOS image sensor) in which a plurality of sub-pixels share one microlens has the advantages and disadvantages described below.

[0057] (advantage)

[0058] There is distance information in all pixels, which can be used for PDAF function.

[0059] (shortcoming)

[0060] Each pixel has a different shadow profile, so the influence of brightness shadow is large.

[0061] The optical center of the microlens is located at the position where the back metal BSM is formed, so the sensitivity of the optical center will drop sharply due to reflection and the like.

[0062] The present invention provides a solid-state imaging device, a method for manufacturing the solid-state imaging device, and an electronic device which have little crosstalk between adjacent sub-pixels, can suppress the influence of brightness shadows, and can suppress the decrease in sensitivity of the optical center.

[0063] Solutions to the problem

[0064] A solid-state imaging device according to a first aspect of the present invention includes a multi-pixel, which includes at least two sub-pixels including a photoelectric conversion region, and the multi-pixel includes: a back separation portion, which separates a plurality of adjacent sub-pixels at least in a light incident portion of the photoelectric conversion region; and a lens portion, which allows light to be incident on the photoelectric conversion regions of at least two sub-pixels, the lens portion being configured so that the optical center is at the formation position of the back separation portion, and the back separation portion being formed in a manner that is low in reflection at least in the optical center region compared to other back separation region regions.

[0065] A second aspect of the present invention is a method for manufacturing a solid-state imaging device, which includes a multi-pixel, which includes at least two sub-pixels including a photoelectric conversion region, and the multi-pixel includes: a back separation portion, which separates a plurality of adjacent sub-pixels at least in the light incident portion of the photoelectric conversion region; and a lens portion, which allows light to be incident on the photoelectric conversion regions of at least two sub-pixels, wherein the optical center of the lens portion is configured in a manner to be located at a formation position of the back separation portion, and the back separation portion is formed in a manner to be low-reflective at least in the optical center region compared to other back separation region regions.

[0066] An electronic device according to a third aspect of the present invention includes: a solid-state imaging device; and an optical system for imaging a subject in the solid-state imaging device, wherein the solid-state imaging device includes a multi-pixel, the multi-pixel including at least two sub-pixels including a photoelectric conversion region, the multi-pixel including: a back separation portion for separating a plurality of adjacent sub-pixels at least in a light incident portion of the photoelectric conversion region; and a lens portion for allowing light to be incident on the photoelectric conversion regions of at least two sub-pixels, the lens portion being configured so that the optical center is at the formation position of the back separation portion, and the back separation portion being formed in a manner that is low in reflection at least in the optical center region compared to other back separation region regions.

[0067] Effects of the Invention

[0068] According to the present invention, crosstalk between adjacent sub-pixels is reduced, the influence of brightness shading can be suppressed, and a decrease in the sensitivity of the optical center can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0069] Figure 1 A diagram schematically showing a first configuration example of a solid-state imaging device (CMOS image sensor) including a microlens for each sub-pixel.

[0070] Figure 2 A diagram schematically showing second and third configuration examples of a solid-state imaging device (CMOS image sensor) including a microlens for each sub-pixel.

[0071] Figure 3This is a diagram schematically showing a fourth configuration example of a solid-state imaging device (CMOS image sensor) in which a plurality of sub-pixels share one microlens.

[0072] Figure 4 A diagram schematically showing fifth and sixth configuration examples of a solid-state imaging device (CMOS image sensor) in which a plurality of sub-pixels share one microlens.

[0073] Figure 5 This is a block diagram showing a configuration example of a solid-state imaging device according to a first embodiment of the present invention.

[0074] Figure 6 This is a circuit diagram showing an example of a multi-pixel in which four sub-pixels share one floating diffusion layer in the pixel section of the solid-state imaging device according to the first embodiment.

[0075] Figure 7 FIG. 1 is a diagram showing a configuration example of a column signal processing circuit in a readout circuit according to the present embodiment.

[0076] Figure 8 This is a diagram showing a schematic configuration example of a solid-state imaging device (CMOS image sensor) according to the first embodiment.

[0077] Fig. 9 This is a diagram showing a schematic configuration example of a solid-state imaging device (CMOS image sensor) according to the second embodiment.

[0078] Fig.10 This is a diagram showing a schematic configuration example of a solid-state imaging device (CMOS image sensor) according to the third embodiment.

[0079] Fig.11 This is a diagram showing a schematic configuration example of a solid-state imaging device (CMOS image sensor) according to the fourth embodiment.

[0080] Fig.12 This is a diagram schematically showing a modified example of the solid-state imaging device (CMOS image sensor) according to the fourth embodiment.

[0081] Fig.13 This is a diagram showing a schematic configuration example of a solid-state imaging device (CMOS image sensor) according to the fifth embodiment.

[0082] Fig.14 This is a diagram showing a schematic configuration example of a solid-state imaging device (CMOS image sensor) according to the sixth embodiment.

[0083] Fig.15 This is a diagram showing a schematic configuration example of a solid-state imaging device (CMOS image sensor) according to the seventh embodiment.

[0084] Fig.16 This is a diagram schematically showing a modified example of the solid-state imaging device (CMOS image sensor) according to the seventh embodiment.

[0085] Fig.17 This is a diagram showing an example of the configuration of an electronic device to which the solid-state imaging device according to the embodiment of the present invention is applied. DETAILED DESCRIPTION

[0086] Hereinafter, embodiments of the present invention will be described in conjunction with the drawings.

[0087] (First Embodiment)

[0088] Figure 5 This is a block diagram showing a configuration example of a solid-state imaging device according to a first embodiment of the present invention.

[0089] In the present embodiment, the solid-state imaging device 10 is constituted by, for example, a CMOS image sensor. As an example, the CMOS image sensor is applied to a back side illumination image sensor (BSI).

[0090] like Figure 5 As shown, the solid-state imaging device 10 includes a pixel unit 20 as an imaging unit, a vertical scanning circuit (row scanning circuit) 30, a reading circuit (column reading circuit) 40, a horizontal scanning circuit (column scanning circuit) 50 and a timing control circuit 60 as main structural elements.

[0091] Among these components, for example, the vertical scanning circuit 30 , the reading circuit 40 , the horizontal scanning circuit 50 , and the timing control circuit 60 constitute a pixel signal reading section 70 .

[0092] In the first embodiment, the solid-state imaging device 10 is described in detail below. Pixels arranged in rows and columns in the pixel section 20 are formed into multi-pixels including at least two (four in the first embodiment) sub-pixels including a photoelectric conversion region.

[0093] In the first embodiment, the multi-pixel includes: a back side separator that separates a plurality of adjacent sub-pixels at least at a light incident portion of a photoelectric conversion region; and a lens that allows light to enter the photoelectric conversion regions of at least two sub-pixels.

[0094] Moreover, in the first embodiment, the optical center of the lens portion is arranged at the formation position of the back side separation portion, and the back side separation portion is formed so as to have lower reflection (higher light absorption) than other back side separation portion regions at least in the optical center region.

[0095] In the first embodiment, the rear surface separation portion is formed so that the optical center region has lower reflection (higher light absorption) than other regions of the rear surface separation portion.

[0096] Furthermore, in the first embodiment, the unit sub-pixel group, ie, the multi-pixel, is formed as a NIR-RGB sensor.

[0097] Hereinafter, after explaining the outline of the configuration and function of each part of the solid-state imaging device 10 , the specific configuration, arrangement, etc. of the multi-pixel will be described in detail.

[0098] (Structure of Pixel Unit 20 and Multi-Pixel MPXL20)

[0099] The pixel unit 20 includes a plurality of multi-pixels including a photodiode (photoelectric conversion unit) and an in-pixel amplifier arranged in a two-dimensional row-column form (matrix form) of N rows×M columns.

[0100] Figure 6 This is a circuit diagram showing an example of a multi-pixel in which four sub-pixels share one floating diffusion layer in the pixel section of the solid-state imaging device according to the first embodiment.

[0101] exist Figure 6 In the pixel portion 20 , four sub-pixels of the multi-pixel MPXL20 , namely, a first sub-pixel SPXL11 , a second sub-pixel SPXL12 , a third sub-pixel SPXL21 , and a fourth sub-pixel SPXL22 are arranged in a 2×2 square.

[0102] The structure of the first sub-pixel SPXL11 includes a photodiode PD11 and a transfer transistor TG11 -Tr formed by a first photoelectric conversion region.

[0103] The structure of the second sub-pixel SPXL12 includes a photodiode PD12 and a transfer transistor TG12-Tr formed by a second photoelectric conversion region.

[0104] The structure of the third sub-pixel SPXL21 includes a photodiode PD21 and a transfer transistor TG21 -Tr formed by a third photoelectric conversion region.

[0105] The structure of the fourth sub-pixel SPXL22 includes a photodiode PD22 and a transmission transistor TG22-Tr.

[0106] Furthermore, the four sub-pixels SPXL11 , SPXL12 , SPXL21 , and SPXL22 of the multi-pixel MPXL20 of the pixel unit 20 share a floating diffusion layer FD (Floating Diffusion) 11 , a reset transistor RST11 -Tr, a source follower transistor SF11 -Tr, and a selection transistor SEL11 -Tr.

[0107] In this four-subpixel sharing structure, for example, the first subpixel SPXL11 is formed as a G subpixel, the second subpixel SPXL12 is formed as an R subpixel, the third subpixel SPXL21 is formed as a B subpixel, and the fourth subpixel SPXL22 is formed as an NIR subpixel.

[0108] For example, the photodiode PD11 of the first sub-pixel SPXL11 functions as a first green (G) photoelectric conversion unit, the photodiode PD12 of the second sub-pixel SPXL12 functions as a red (R) photoelectric conversion unit, the photodiode PD21 of the third sub-pixel SPXL21 functions as a blue (B) photoelectric conversion unit, and the photodiode PD22 of the fourth sub-pixel SPXL22 functions as a near-infrared (NIR) photoelectric conversion unit.

[0109] For example, embedded photodiodes (PPDs) are used as the photodiodes PD11 , PD12 , PD21 , and PD22 .

[0110] On the surface of the substrate forming the photodiodes PD11, PD12, PD21, and PD22, there are surface energy levels caused by defects such as dangling bonds. Therefore, a large amount of charge (dark current) is generated due to thermal energy, making it impossible to read correct signals.

[0111] The embedded photodiode (PPD) can reduce the mixing of dark current into the signal by embedding the charge accumulation part of the photodiode PD into the substrate.

[0112] The photodiodes PD11 , PD12 , PD21 , and PD22 generate and accumulate signal charges (electrons in this case) in an amount corresponding to the amount of incident light.

[0113] In the following, a case where the signal charges are electrons and each transistor is an n-type transistor is described, but the signal charges may be holes and each transistor may be a p-type transistor.

[0114] The transfer transistor TG11 -Tr is connected between the photodiode PD11 and the floating diffusion layer FD11 , and is controlled by a control line (or a control signal) TG11 .

[0115] The transfer transistor TG11 -Tr is selected and turned on under the control of the reading unit 70 while the control line TG11 is at a predetermined level, ie, a high level (H), and transfers the charges (electrons) photoelectrically converted and accumulated by the photodiode PD11 to the floating diffusion layer FD11 .

[0116] The transfer transistor TG12 -Tr is connected between the photodiode PD12 and the floating diffusion layer FD11 , and is controlled by a control line (or a control signal) TG12 .

[0117] The transfer transistor TG12 -Tr is selected and turned on under the control of the reading unit 70 while the control line TG12 is at a predetermined level, ie, a high level (H), and transfers the charges (electrons) photoelectrically converted and accumulated by the photodiode PD12 to the floating diffusion layer FD11 .

[0118] The transfer transistor TG21 -Tr is connected between the photodiode PD21 and the floating diffusion layer FD11 , and is controlled by a control line (or a control signal) TG21 .

[0119] The transfer transistor TG21 -Tr is selected and turned on under the control of the reading unit 70 while the control line TG21 is at a predetermined level, ie, a high level (H), and transfers the charges (electrons) photoelectrically converted and accumulated by the photodiode PD21 to the floating diffusion layer FD11 .

[0120] The transfer transistor TG22 -Tr is connected between the photodiode PD22 and the floating diffusion layer FD11 , and is controlled by a control line (or a control signal) TG22 .

[0121] The transfer transistor TG22 -Tr is selected and turned on under the control of the reading unit 70 while the control line TG22 is at a predetermined level, ie, a high level (H), and transfers the charges (electrons) photoelectrically converted and accumulated by the photodiode PD22 to the floating diffusion layer FD11 .

[0122] Reset transistor RST11-Tr Figure 6 As shown, it is connected between a power line VDD (or power supply potential) and a floating diffusion layer FD11, and is controlled by a control line (or control signal) RST11.

[0123] Furthermore, the reset transistor RST11 -Tr may be configured so as to be connected between a power supply line VRst different from the power supply line VDD and the floating diffusion layer FD and to be controlled by the control line (or control signal) RST11 .

[0124] The reset transistor RST11 -Tr is selected and turned on under the control of the reading section 70 , for example, during reading scanning, while the control line RST11 is at the H level, and resets the floating diffusion FD11 to the potential of the power line VDD (or VRst).

[0125] The source follower transistor SF11 -Tr and the selection transistor SEL11 -Tr are connected in series between a power supply line VDD and a vertical signal line LSGN.

[0126] The gate of the source follower transistor SF11 -Tr is connected to the floating diffusion layer FD11 , and the selection transistor SEL11 -Tr is controlled by a control line (or a control signal) SEL11 .

[0127] The selection transistor SEL11-Tr is selected and turned on during the period when the control line SEL11 is at the H level. As a result, the source follower transistor SF11-Tr outputs the column output read voltage (signal) VSL (PIXOUT) to the vertical signal line LSGN. The column output read voltage (signal) VSL (PIXOUT) is a signal obtained by converting the charge of the floating diffusion layer FD11 into a voltage signal with a gain corresponding to the charge amount (potential).

[0128] The vertical scanning circuit 30 drives the sub-pixels through the row scanning control lines in the shutter row and the reading row according to the control of the timing control circuit 60 .

[0129] Furthermore, the vertical scanning circuit 30 outputs a row selection signal of a row address of a read row for reading a signal and a shutter row for resetting the charge accumulated in the photodiode PD, based on the address signal.

[0130] In a normal pixel reading operation, shutter scanning is performed by driving the vertical scanning circuit 30 of the reading section 70 , and then reading scanning is performed.

[0131] The reading circuit 40 may include a plurality of column signal processing circuits (not shown) arranged corresponding to the column outputs of the pixel unit 20 , and may perform column-parallel processing using the plurality of column signal processing circuits.

[0132] The structure of the reading circuit 40 may include a correlated double sampling (CDS) circuit or an ADC (analog-to-digital converter; AD converter), an amplifier (AMP, amplifier), a sample-and-hold (S / H) circuit, and the like.

[0133] So, for example, Figure 7 As shown in (A), the structure of the reading circuit 40 may include an ADC 41 that converts the reading signal VSL output from each column of the pixel unit 20 into a digital signal.

[0134] Or, for example, Figure 7 As shown in FIG. 5B , the read circuit 40 may include an amplifier (AMP) 42 for amplifying the read signal VSL output from each column of the pixel unit 20 .

[0135] In addition, for example, Figure 7As shown in FIG. 5(C), the read circuit 40 may be provided with a sample-and-hold (S / H) circuit 43 for sampling and holding the read signal VSL output from each column of the pixel unit 20 .

[0136] The horizontal scanning circuit 50 scans the signals processed by the plurality of column signal processing circuits such as ADC of the reading circuit 40 , transfers them in the horizontal direction, and outputs them to a signal processing circuit (not shown).

[0137] The timing control circuit 60 generates timing signals necessary for signal processing of the pixel unit 20 , the vertical scanning circuit 30 , the reading circuit 40 , the horizontal scanning circuit 50 , and the like.

[0138] The above is a description of the outline of the configuration and function of each portion of the solid-state imaging device 10 .

[0139] Next, the specific structure of the pixel arrangement according to the first embodiment will be described.

[0140] Figure 8 (A) to (C) are diagrams showing schematic configuration examples of the solid-state imaging device (CMOS image sensor) according to the first embodiment.

[0141] Figure 8 (A) is a diagram showing a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as a NIR-RGB sensor in a plan view.

[0142] Figure 8 (B) Yes Figure 8 (A) is a simplified cross-sectional view of the line x11-x12.

[0143] Figure 8 (C) Yes Figure 8 (A) is a simplified cross-sectional view along the y11-y12 line.

[0144] In this embodiment, the first direction is, for example, a column direction (horizontal direction, X direction) or a row direction (vertical direction, Y direction) or an oblique direction of the pixel unit 20 in which a plurality of pixels are arranged in rows and columns.

[0145] In the following description, as an example, the first direction is set to be the column direction (horizontal direction, X direction), and the second direction is set to be the row direction (vertical direction, Y direction).

[0146] exist Figure 8 In the pixel portion 20 of (A), four sub-pixels of the multi-pixel MPXL20, namely, a first sub-pixel SPXL11, a second sub-pixel SPXL12, a third sub-pixel SPXL21, and a fourth sub-pixel SPXL22 are arranged in a 2×2 square.

[0147] Specifically, the multi-pixel MPXL20 is arranged in a square as follows: in a first direction, i.e., the X direction, the first sub-pixel SPXL11 is adjacent to the second sub-pixel SPXL12, and the third sub-pixel SPXL21 is adjacent to the fourth sub-pixel SPXL22, and in a second direction orthogonal to the first direction, i.e., the Y direction, the first sub-pixel SPXL11 is adjacent to the third sub-pixel SPXL21, and the second sub-pixel SPXL12 is adjacent to the fourth sub-pixel SPXL22.

[0148] In this first embodiment, the first sub-pixel SPXL11 is formed as a G sub-pixel SPXLG including a green (G) filter FLT-G that mainly transmits green light, the second sub-pixel SPXL12 is formed as an R sub-pixel SPXLR including a red (R) filter FLT-R that mainly transmits red light, the third sub-pixel SPXL21 is formed as a B sub-pixel SPXLB including a blue (B) filter FLT-B that mainly transmits blue light, and the fourth sub-pixel SPXL22 is formed as a dedicated near-infrared (NIR) sub-pixel SPXLNI that receives infrared light.

[0149] Moreover, if Figure 8 As shown in (A), (B) and (C), the structure of the multi-pixel MPXL20 includes a photoelectric conversion unit 210, a lens unit 220, a color filter unit 230, an anti-reflection film 240, a first back side separation unit 250 and a second back side separation unit 260.

[0150] The rectangular area RCT20 defined by four outer edges L11~L14, i.e., the photoelectric conversion part (PD1O) 210, is separated (divided) into a first photoelectric conversion region (PD11) 211, a second photoelectric conversion region (PD12) 212, a third photoelectric conversion region (PD21) 213 and a fourth photoelectric conversion region (PD22) 214 corresponding to the first sub-pixel SPXL11, the second sub-pixel SPXL12, the third sub-pixel SPXL21 and the fourth sub-pixel SPXL22 at its light incident part.

[0151] The photoelectric conversion portion (PD10) 210 is separated (divided) into four rectangular regions, namely, a first photoelectric conversion region (PD11) 211, a second photoelectric conversion region (PD12) 212, a third photoelectric conversion region (PD13) 213 and a fourth photoelectric conversion region (PD14) 214, by a first back side separation portion 250 and a second back side separation portion 260 as described in detail below.

[0152] The photoelectric conversion unit 210, which is separated (divided) into a first photoelectric conversion region (PD11) 211, a second photoelectric conversion region (PD12) 212, a third photoelectric conversion region (PD21) 213 and a fourth photoelectric conversion region (PD22) 214, is formed in a manner of being embedded relative to a semiconductor substrate 270, and is formed in a manner of having a function of photoelectric conversion of received light and a charge accumulation function. The semiconductor substrate 270 includes a first substrate surface 271 side, and a second substrate surface 272 side opposite to the first substrate surface 271 side.

[0153] The first photoelectric conversion region (PD11) 211, the second photoelectric conversion region (PD12) 212, the third photoelectric conversion region (PD21) 213 and the fourth photoelectric conversion region (PD22) 214 of the photoelectric conversion unit 210 are separated by an anti-reflection film 240 that functions as a flat layer, and a color filter unit 230 is arranged on the first substrate surface 271 side (back side).

[0154] Output parts OP11, OP12, OP21, OP22 are formed on the second substrate surface 272 side (front surface side) of the first photoelectric conversion region (PD11) 211, the second photoelectric conversion region (PD12) 212, the third photoelectric conversion region (PD21) 213 and the fourth photoelectric conversion region (PD22) 214, and the output parts OP11, OP12, OP21, OP22 include output transistors that output signals corresponding to the photoelectrically converted and accumulated charges.

[0155] The lens portion 220 is formed by a microlens MCL221 that allows light to enter the first photoelectric conversion region 211 of the first subpixel SPXL11, the second photoelectric conversion region 212 of the second subpixel SPXL12, the third photoelectric conversion region 213 of the third subpixel SPXL21, and the fourth photoelectric conversion region 214 of the fourth subpixel SPXL22.

[0156] The optical center OCT1 of one micro-lens MCL221 is located in the pixel central region RPCT where the boundaries of the four sub-pixels, namely, the first sub-pixel SPXL11 , the second sub-pixel SPXL12 , the third sub-pixel SPXL21 , and the fourth sub-pixel SPXL22 intersect.

[0157] The color filter portion 230 is divided into a green (G) filter region 231 , a red (R) filter region 232 , a blue (B) filter region 233 , and a near infrared (NIR) filter region 234 to form color sub-pixels.

[0158] A microlens MCL221 of the lens unit 220 is disposed on the light incident side of each of the green (G) filter region 231 , the red (R) filter region 232 , the blue (B) filter region 233 , and the near infrared (NIR) filter region 234 .

[0159] As described above, the rectangular area RCT10 defined by the four outer edges L11 to L14, i.e., the photoelectric conversion portion (PD10) 210, is separated (divided) into four rectangular areas, i.e., the first photoelectric conversion region (PD11) 211, the second photoelectric conversion region (PD12) 212, the third photoelectric conversion region (PD21) 213, and the fourth photoelectric conversion region (PD22) 214, by the first back side separation portion 250 and the second back side separation portion 260.

[0160] Specifically, the photoelectric conversion unit (PD10) 210 is divided into four parts at the light incident portion thereof by the back side separation unit 250, and the back side separation unit 250 is formed in substantially the same position and shape as the back side metal (BSM).

[0161] The back separation portion 250 is composed of a first separation portion 251 with a length LG1 formed between the central point PCT of the rectangular area RCT10 defining the photoelectric conversion portion PD10 of the multi-pixel MPXL20 and the midpoint CL11 of the outer edge L11, a second separation portion 252 with a length LG2 formed between the central point PCT and the midpoint CL12 of the outer edge L12, a third separation portion 253 with a length LG3 formed between the central point PCT and the midpoint CL13 of the outer edge L13, and a fourth separation portion 254 with a length LG4 formed between the central point PCT and the midpoint CL14 of the outer edge L14.

[0162] That is, the first separating portion 251 is formed at the boundary between the first photoelectric conversion region 211 of the first sub-pixel SPXL11 and the second photoelectric conversion region 212 of the second sub-pixel SPXL12 .

[0163] A second separation portion 252 is formed at a boundary between the third photoelectric conversion region 213 of the third sub-pixel SPXL21 and the fourth photoelectric conversion region 214 of the fourth sub-pixel SPXL22 .

[0164] A third separating portion 253 is formed at a boundary between the first photoelectric conversion region 211 of the first sub-pixel SPXL11 and the third photoelectric conversion region 213 of the third sub-pixel SPXL21 .

[0165] A fourth separating portion 254 is formed at a boundary between the second photoelectric conversion region 212 of the second sub-pixel SPXL12 and the fourth photoelectric conversion region 214 of the fourth sub-pixel SPXL22 .

[0166] In the first embodiment, the back separation portion 250 is formed at the boundary of each sub-pixel SPXL11, SPXL12, SPXL21, and SPXL22 in a manner protruding from the antireflection film 240 toward the filter portion 230, similarly to a conventional back metal BSM.

[0167] Moreover, in the first embodiment, the optical center OCT1 of the microlens 221 is located in the pixel central area RPCT where the boundaries of the four sub-pixels, namely the first sub-pixel SPXL11, the second sub-pixel SPXL12, the third sub-pixel SPXL21 and the fourth sub-pixel SPXL22, intersect. Therefore, the back separation portion 250 arranged in the optical center area ROCT1 is formed of a material with lower reflection (high light absorption) than other back separation portions outside the optical center area ROCT1.

[0168] In the back separation portion 250, the first separation portion 251 is formed as a first low-reflection portion 2511 of length l1 (l1<LG1) in such a manner that the central point PCT of the rectangular area RCT10 defining the photoelectric conversion portion PD10 is within the optical center area ROCT1, and the remaining length (LG1-l1) of the first separation portion 251 is formed as the back metal portion BSM1.

[0169] The second separation portion 252 forms a second low-reflection portion 2521 of length l2 (l2<LG2) in such a way that the central point PCT of the rectangular area RCT10 is within the optical center area ROCT1, and the remaining length (LG2-l2) of the second separation portion 252 is formed as the back metal portion BSM2.

[0170] The third separation portion 253 is formed into a third low-reflection portion 2531 of length l3 (l3<LG3) in such a way that the central point PCT of the rectangular area RCT10 is within the optical center area ROCT1, and the remaining length (LG3-l3) of the third separation portion 253 is formed as the back metal portion BSM3.

[0171] The fourth separation portion 254 forms a fourth low reflection portion 2541 of length l4 (l4<LG4) in such a way that the central point PCT of the rectangular area RCT10 is within the optical center area ROCT1, and the remaining length (LG4-l4) of the fourth separation portion 254 is formed as the back metal portion BSM4.

[0172] Furthermore, in the first embodiment, as an example, the length l1 of the first low-reflection portion 2511 of the first separation portion 251, the length l2 of the second low-reflection portion 2521 of the second separation portion 252, the length l3 of the third low-reflection portion 2531 of the third separation portion 253, and the length l4 of the fourth low-reflection portion 2541 of the fourth separation portion 254 are set to the same length (l1=l2=l3=l4).

[0173] The general back metal parts BSM1 to BSM4 are formed of, for example, gold, aluminum, titanium, copper, chromium, palladium, nickel, silver, tungsten, or the like.

[0174] On the other hand, the following materials can be exemplified as materials having lower reflectivity than the metal materials of the back metal portions BSM1 to BSM4 .

[0175] The following materials can be exemplified as low-reflection and high-absorption materials in a specific wavelength band, for example, NIR wavelengths (for example, 850 nm to 940 nm).

[0176] 1) Inorganic dielectric materials such as oxides, silicon nitrides, hafnium, tantalum, tungsten, iridium (Ta2O5, WO3, IrOx) and WO3, ITO (indium tin oxide), ATO (antimony tin oxide) and any mixture of two or more of these components.

[0177] 2) Black filters and inks realized using organic absorbing functional dyes and existing dyes (for example, (1) stacked naphthalimide anion radicals, (2) condensed porphyrin arrays, (3) doped polythiophene and other related conductive polymers, (4) rare earth sandwich bisphthalocyanines, (5) conjugated diquinone radical anions (also called semiquinones), and (6) mixed atomic valence binuclear metal complexes.

[0178] 3) One or more material layers, nanostructured (eg moth-eye) layers that function as anti-reflective coatings.

[0179] These are examples of materials for the low-reflection portion, and may be replaced by, for example, a p-type impurity injection layer or other low-reflection materials.

[0180] In addition, in the photoelectric conversion unit PD10, a second side rear separation unit 260 is formed as a back deep trench isolation (BDTI), i.e., a trench type back isolation, so as to overlap with the back separation unit 250 in the depth direction of the photoelectric conversion unit 210 (depth direction of the substrate 270: Z direction).

[0181] A groove-type second separation portion 261 is formed in a manner overlapping the first separation portion 251 of the first back separation portion 250 in the Z direction. Furthermore, the groove-type first separation portion 261 forms a low reflection portion 2611 of a length l1 (l1 < LG1) in a manner that the central point PCT of the rectangular region RCT10 defining the photoelectric conversion portion PD10 is within the optical center region ROCT1, and the remaining length (LG1-l1) of the first separation portion 261 is formed as a groove-type back deep isolation portion BDTI1.

[0182] A groove-type second separation portion 262 is formed in a manner overlapping the second separation portion 252 of the first back separation portion 250 in the Z direction. Furthermore, the groove-type second separation portion 262 forms a low reflection portion 2621 of a length l2 (l2 < LG2) in a manner from the central point PCT of the rectangular region RCT10 to be within the optical center region ROCT1, and the remaining length (LG2-l2) of the second separation portion 262 is formed as a groove-type back deep isolation portion BDTI2.

[0183] A groove-type third separation portion 263 is formed in a manner overlapping the third separation portion 253 of the first back separation portion 250 in the Z direction. Furthermore, the groove-type third separation portion 263 forms a low reflection portion 2631 of a length l3 (l3 < LG3) in a manner from the central point PCT of the rectangular region RCT10 to be within the optical center region ROCT1, and the remaining length (LG3-l3) of the third separation portion 263 is formed as a groove-type back deep isolation portion BDTI3.

[0184] A groove-type fourth separation portion 264 is formed in a manner overlapping the fourth separation portion 254 of the first back separation portion 250 in the Z direction. Furthermore, the groove-type fourth separation portion 264 forms a low reflection portion 2641 of a length l4 (l4 < LG4) in a manner from the central point PCT of the rectangular region RCT10 to be within the optical center region ROCT1, and the remaining length (LG4-l4) of the fourth separation portion 264 is formed as a groove-type back deep isolation portion BDTI4.

[0185] In the low-reflection parts 2611, 2621, 2631, 2641 of the second back side separation part 260, similarly to the low-reflection parts 2511, 2521, 2531, 2541 of the first back side separation part 250, a layer formed of a material with lower reflectivity than the metal material of the back side metal parts BSM1~BSM4 and the trench-type back side deep isolation parts BDTI1~BDTI4 is embedded.

[0186] In the first embodiment, the multi-pixel MPXL20 includes: a back separation portion 250 and a groove-type second side rear separation portion 260, which separate multiple adjacent sub-pixels at least in the light incident part of the photoelectric conversion region; and a lens portion 220, including a microlens MCL221 for allowing light to be incident on the photoelectric conversion regions PD11, PD12, PD21, and PD22 of the four sub-pixels SPXL11, SPXL12, SPXL21, and SPXL22.

[0187] Moreover, in the first embodiment, the optical center of the microlens MCL221 of the lens portion 220 is configured in a manner to be located at the formation position of the first back side separation portion 250 and the second back side separation portion 260, and the first back side separation portion 250 and the second back side separation portion 260 are formed in a manner to have low reflection (high light absorption) in at least the optical center area compared to other back side separation portion areas.

[0188] Therefore, according to the first embodiment, distance information exists in all sub-pixels and can be applied to the PDAF function.

[0189] Even if the optical center of the microlens is located at the position where the back metal BSM is formed, it is possible to suppress a sharp decrease in sensitivity at the optical center due to reflection or the like.

[0190] That is, according to the first embodiment, crosstalk between adjacent sub-pixels is reduced, the influence of brightness shading can be suppressed, and a decrease in the sensitivity of the optical center can be suppressed.

[0191] (Second Embodiment)

[0192] Fig. 9 (A) to (C) are diagrams showing schematic configuration examples of a solid-state imaging device (CMOS image sensor) according to the second embodiment.

[0193] Fig. 9 (A) is a diagram showing a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as a NIR-RGB sensor in a plan view.

[0194] Fig. 9 (B) Yes Fig. 9 (A) is a simplified cross-sectional view of the line x11-x12.

[0195] Fig. 9 (C) Yes Fig. 9 (A) is a simplified cross-sectional view along the y11-y12 line.

[0196] The second embodiment is different from the first embodiment in the following points.

[0197] In the first embodiment, the optical center OCT1 of the microlens MCL221 is located in the pixel central area RPCT where the boundaries of the four sub-pixels, namely the first sub-pixel SPXL11, the second sub-pixel SPXL12, the third sub-pixel SPXL21 and the fourth sub-pixel SPXL22, intersect. Therefore, a portion of the optical center area of ​​the first separation portion 251 to the fourth separation portion 254 of the back separation portion 250 arranged in the optical center area ROCT1 is set as a low-reflection portion, and the low-reflection portion is formed by a material with low reflection (high light absorption) compared with other back separation portions outside the optical center area OCT1.

[0198] In contrast, in the second embodiment, not only the optical center area is set as a low-reflection portion, but the entire first separation portion 251A to the fourth separation portion 254A of the first back separation portion 250 is set as a low-reflection portion, and the low-reflection portion is formed by a low-reflection (high light absorption) material.

[0199] Similarly, the entirety of the first to fourth separation portions 261A to 264A of the second rear side separation portion 260 may be set as a low reflection portion and formed of a low reflection (high light absorption) material.

[0200] According to the second embodiment, the same effects as those of the first embodiment can be obtained. Even if the optical center of the microlens is located at the formation position of the back metal BSM, the sensitivity of the optical center can be further suppressed from being sharply reduced due to reflection or the like.

[0201] (Third Embodiment)

[0202] Fig.10 (A) to (C) are diagrams showing schematic configuration examples of a solid-state imaging device (CMOS image sensor) according to the third embodiment.

[0203] Fig.10 (A) is a diagram showing a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as a NIR-RGB sensor in a plan view.

[0204] Fig.10 (B) Yes Fig.10 (A) is a simplified cross-sectional view of the line x11-x12.

[0205] Fig.10 (C) Yes Fig.10 (A) is a simplified cross-sectional view along the y11-y12 line.

[0206] The third embodiment is different from the first embodiment in the following points.

[0207] In the first embodiment, the optical center OCT1 of the microlens 221 is located in the pixel central area RPCT where the boundaries of the four sub-pixels, namely the first sub-pixel SPXL11, the second sub-pixel SPXL12, the third sub-pixel SPXL21 and the fourth sub-pixel SPXL22, intersect. Therefore, a portion of the optical center area of ​​the first separation portion 251 to the fourth separation portion 254 of the back separation portion 250 arranged in the optical center area ROCT1 is set as a low-reflection portion, and the low-reflection portion is formed by a material with lower reflectance (high light absorption) than other back separation portions outside the optical center area OCT1.

[0208] In contrast, in the third embodiment, the material of the back metal parts BSM1 to BSM4 of the low-reflection parts 2511B, 2521B, 2531B, and 2541B of the first separation part 251B to the fourth separation part 254B forming the first back separation part 250B is removed to form a low-reflection (high light absorption) state.

[0209] Furthermore, the trench-type back surface deep isolations BDTI1 to BDTI4 of the low reflection portions 2611B, 2621B, 2631B, and 2641B of the first to fourth separation portions 261B to 264B of the second back surface separation portion 260B are formed of a low reflection (high light absorption) material.

[0210] According to the third embodiment, the same effect as that of the first embodiment can be obtained. Even if the optical center of the microlens is located at the formation position of the back metal BSM, the sensitivity of the optical center can be further suppressed from being sharply reduced due to reflection or the like.

[0211] (Fourth Embodiment)

[0212] Fig.11 (A) to (C) are diagrams showing schematic configuration examples of a solid-state imaging device (CMOS image sensor) according to the fourth embodiment.

[0213] Fig.11 (A) is a diagram showing a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as a sensor in which multiple pixels are partially provided with a PDAF function.

[0214] Fig.11 (B) Yes Fig.11 (A) is a simplified cross-sectional view of the line x11-x12.

[0215] Fig.11 (C) Yes Fig.11 (A) is a simplified cross-sectional view along the y11-y12 line.

[0216] The fourth embodiment is different from the first embodiment in the following points.

[0217] In a first embodiment, the lens portion 220 of the multi-pixel MPXL20C includes a microlens MCL221C that allows light to be incident on the photoelectric conversion regions PD11, PD12, PD21, and PD22 of the four sub-pixels SPXL11, SPXL12, SPXL21, and SPXL22, and the optical center of the microlens is configured in a manner that is located at the formation position of the first back separation portion 250C and the second back separation portion 260C, and the first back separation portion 250 and the second back separation portion 260C are formed in a manner that has low reflection (high light absorption) in at least the optical center region compared to other back separation portion regions.

[0218] In contrast, in the present fourth embodiment, a first microlens MCL221C is included for allowing light to enter the first photoelectric conversion region PD11 of the two first sub-pixels SPXL11 and the second photoelectric conversion region PD12 of the second sub-pixel SPXL12, a second microlens MCL222C is included for allowing light to enter the third photoelectric conversion region PD21 of the third sub-pixel SPXL21, and a third microlens MCL223C is included for allowing light to enter the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPCL22.

[0219] The optical center of the first microlens MCL221C is located in a central region CT12 of a boundary region RBD12 between the first photoelectric conversion region PD11 of the first subpixel SPXL11 and the second photoelectric conversion region PD12 of the second subpixel SPXL12 .

[0220] Moreover, a portion of the central area CT12 of the boundary area RBD12 included in the optical center of the first separation portion 251C of the first back separation portion 250C (and the first separation portion 261C of the second back separation portion 260C) configured in the boundary area RBD12 is set as a low-reflection portion, and the low-reflection portion is formed by a material with low reflection (high light absorption) compared to other back separation portions outside the optical center area.

[0221] In the solid-state imaging device 10C of the fourth embodiment, a first separation portion 251C, 261C is formed at the boundary between the first photoelectric conversion region (PD11) 211 of the first sub-pixel SPXL11 and the second photoelectric conversion region (PD12) 212 of the second sub-pixel SPXL12, and the first separation portion 251C, 261C has a low reflection portion in the central region CT12 thereof.

[0222] Second separation portions 252C and 262C having no low-reflection portion are formed at the boundary between the third photoelectric conversion region (PD21) 213 of the third sub-pixel SPXL21 and the fourth photoelectric conversion region (PD22) 214 of the fourth sub-pixel SPXL22.

[0223] Third separation portions 253C and 263C having no low reflection portion are formed at the boundary portion between the first photoelectric conversion region (PD11) 211 of the first sub-pixel SPXL11 and the third photoelectric conversion region (PD21) 213 of the third sub-pixel SPXL21.

[0224] Fourth separation portions 254C and 264C having no low-reflection portion are formed at the boundary between the second photoelectric conversion region (PD12) 212 of the second sub-pixel SPXL12 and the fourth photoelectric conversion region (PD22) 214 of the fourth sub-pixel SPXL22.

[0225] In addition, the optical center of the second microlens MCL222C coincides with the optical center of the third photoelectric conversion region PD21 , and the optical center of the third microlens MCL223C coincides with the optical center of the fourth photoelectric conversion region PD22 .

[0226] In the solid-state imaging device 10C of the present fourth embodiment, the two first sub-pixels SPXL11 and second sub-pixels SPXL12 that share the microlens MCL11 may partially have PDAF information.

[0227] exist Fig.11 In the example, the first sub-pixel SPXL11 can have information PDAF1, and the second sub-pixel SPXL12 can have information PDAF2.

[0228] In contrast, the third sub-pixel SXL21 and the fourth sub-pixel SXL22 that do not share a microlens do not have the PDAF information.

[0229] (Variation of the Fourth Embodiment)

[0230] Fig.12 (A) to (C) are diagrams showing schematic variations of the solid-state imaging device (CMOS image sensor) according to the fourth embodiment.

[0231] Fig.12 (A) is a diagram showing in plan view a first modified example of a solid-state imaging device (CMOS image sensor) formed as a sensor in which multiple pixels are partially provided with a PDAF function.

[0232] exist Fig.12In the first variant example of (A), it includes a first microlens MCL221D for allowing light to enter the first photoelectric conversion region PD11 of the two first sub-pixels SPXL11 and the third photoelectric conversion region PD21 of the third sub-pixel SPXL21, a second microlens MCL222D for allowing light to enter the second photoelectric conversion region PD12 of the second sub-pixel SPXL12, and a third microlens MCL223D for allowing light to enter the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPXL22.

[0233] The optical center of the first microlens MCL221D is located in a central region CT13 of a boundary region RBD13 between the first photoelectric conversion region PD11 of the first subpixel SPXL11 and the third photoelectric conversion region PD21 of the third subpixel SPXL21 .

[0234] Moreover, a portion of the central area CT13 of the boundary area RBD13 included in the optical center of the third separation portion 253D of the first back separation portion 250D (and the third separation portion 263D of the second back separation portion 260D) configured in the boundary area RBD13 is set as a low-reflection portion, and the low-reflection portion is formed by a material with low reflection (high light absorption) compared to other back separation portions outside the optical center area.

[0235] In the first modification example, first separation portions 251D and 261D having no low-reflection portion are formed at the boundary between the first photoelectric conversion region PD11 of the first subpixel SPXL11 and the second photoelectric conversion region PD12 of the second subpixel SPXL12.

[0236] Second separation portions 252D and 262D having no low-reflection portion are formed at the boundary portion between the third photoelectric conversion region PD21 of the third sub-pixel SPXL21 and the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPXL22.

[0237] Third separating portions 253D and 263D having a low reflection portion in a central region CT13 thereof are formed at a boundary between the first photoelectric conversion region PD11 of the first subpixel SPXL11 and the third photoelectric conversion region PD21 of the third subpixel SPXL21.

[0238] Fourth separation portions 254D and 264D having no low reflection portion are formed at the boundary portion between the second photoelectric conversion region PD12 of the second sub-pixel SPXL12 and the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPXL22.

[0239] In addition, the optical center of the second microlens MCL222D coincides with the optical center of the second photoelectric conversion region PD12 , and the optical center of the third microlens MCL223D coincides with the optical center of the fourth photoelectric conversion region PD22 .

[0240] In the first modification, the two first sub-pixels SPXL11 and the third sub-pixel SPXL21 that share the microlens MCL221D may partially have PDAF information.

[0241] exist Fig.12 In the example of (A), the first sub-pixel SPXL11 can have information PDAF1, and the third sub-pixel SPXL21 can have information PDAF2.

[0242] In contrast, the second sub-pixel SXL12 and the fourth sub-pixel SXL22 that do not share a microlens do not have the PDAF information.

[0243] Fig.12 (B) is a diagram showing in plan view a second modified example of a solid-state imaging device (CMOS image sensor) formed as a sensor in which multiple pixels partially have a PDAF function.

[0244] exist Fig.12 The second variant example of (B) includes a first microlens MCL221E for allowing light to enter the third photoelectric conversion region PD21 of two third sub-pixels SPXL21 and the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPXL22, a second microlens MCL222E for allowing light to enter the first photoelectric conversion region PD11 of the first sub-pixel SPXL11, and a third microlens MCL223E for allowing light to enter the second photoelectric conversion region PD12 of the second sub-pixel SPCL12.

[0245] The optical center of the first microlens MCL221E is located in a central region CT34 of a boundary region RBD34 between the third photoelectric conversion region PD21 of the third subpixel SPXL21 and the fourth photoelectric conversion region PD22 of the fourth subpixel SPXL22 .

[0246] Moreover, a portion of the central area CT34 of the boundary area RBD34 included in the optical center of the second separation portion 252 of the first back separation portion 250E (and the second separation portion 262E of the second back separation portion 260E) configured in the boundary area RBD34 is set as a low-reflection portion, and the low-reflection portion is formed by a material with low reflection (high light absorption) compared to other back separation portions outside the optical center area OCT1.

[0247] In the second modification example, first separation portions 251E and 261E having no low-reflection portion are formed at the boundary between the first photoelectric conversion region PD11 of the first subpixel SPXL11 and the second photoelectric conversion region PD12 of the second subpixel SPXL12.

[0248] Second separation portions 252E and 262E having a low reflection portion in a central region CT34 thereof are formed at the boundary between the third photoelectric conversion region PD21 of the third subpixel SPXL21 and the fourth photoelectric conversion region PD22 of the fourth subpixel SPXL22.

[0249] Third separation portions 253E and 263E having no low-reflection portion are formed at the boundary portion between the first photoelectric conversion region 211 of the first sub-pixel SPXL11 and the third photoelectric conversion region PD21 of the third sub-pixel SPXL22.

[0250] Fourth separation portions 254E and 264E having no low reflection portion are formed at the boundary portion between the second photoelectric conversion region PD12 of the second sub-pixel SPXL12 and the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPXL22.

[0251] In addition, the optical center of the second microlens MCL222E coincides with the optical center of the first photoelectric conversion region PD11 , and the optical center of the third microlens MCL223E coincides with the optical center of the second photoelectric conversion region PD12 .

[0252] In the second modification, the two third sub-pixels SPXL21 and the fourth sub-pixel SPXL22 that share the microlens MCL11 may partially have PDAF information.

[0253] exist Fig.12 In the example of (B), the third sub-pixel SPXL21 can have information PDAF1, and the fourth sub-pixel SPXL22 can have information PDAF2.

[0254] In contrast, the first sub-pixel SXL11 and the second sub-pixel SXL12 that do not share a microlens do not have the PDAF information.

[0255] Fig.12 (C) is a diagram showing in plan view a third modified example of a solid-state imaging device (CMOS image sensor) formed as a sensor in which multiple pixels partially have a PDAF function.

[0256] exist Fig.12The third variant of (C) includes a first microlens MCL221F for allowing light to enter the second photoelectric conversion region PD12 of the two second sub-pixels SPXL12 and the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPXL22, a second microlens MCL222F for allowing light to enter the first photoelectric conversion region PD11 of the first sub-pixel SPXL11, and a third microlens MCL223F for allowing light to enter the second photoelectric conversion region PD21 of the third sub-pixel SPXL21.

[0257] The optical center of the first microlens MCL221F is located in a central region CT24 of a boundary region RBD24 between the second photoelectric conversion region PD12 of the second subpixel SPXL12 and the fourth photoelectric conversion region PD222 of the fourth subpixel SPXL22 .

[0258] Moreover, a portion of the central area CT24 of the boundary area RBD24 included in the optical center of the fourth separation portion 254F of the first back separation portion 250F (and the first separation portion 264F of the second back separation portion 260F) configured in the boundary area RBD24 is set as a low-reflection portion, and the low-reflection portion is formed by a material with low reflection (high light absorption) compared to other back separation portions outside the optical center area.

[0259] In the third modification, first separation portions 251F and 261F having no low-reflection portion are formed at the boundary between the first photoelectric conversion region PD11 of the first subpixel SPXL11 and the second photoelectric conversion region PD12 of the second subpixel SPXL12.

[0260] Second separation portions 252F and 262F having no low-reflection portion are formed at the boundary portion between the third photoelectric conversion region PD21 of the third sub-pixel SPXL21 and the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPXL22.

[0261] Third separation portions 253F and 263F having no low reflection portion are formed at the boundary portion between the first photoelectric conversion region PD11 of the first sub-pixel SPXL11 and the third photoelectric conversion region PD21 of the third sub-pixel SPXL21.

[0262] Fourth separating portions 254F and 264F having a low reflection portion in a central region CT24 thereof are formed at the boundary between the second photoelectric conversion region PD12 of the second subpixel SPXL12 and the fourth photoelectric conversion region PD22 of the fourth subpixel SPXL22.

[0263] In addition, the optical center of the second microlens MCL222F coincides with the optical center of the first photoelectric conversion region PD11 , and the optical center of the third microlens MCL223F coincides with the optical center of the third photoelectric conversion region PD21 .

[0264] In the first modification, the two second sub-pixels SPXL12 and the fourth sub-pixel SPXL22 that share the microlens MCL221F may partially have PDAF information.

[0265] exist Fig.12 In the example of (C), the second sub-pixel SPXL12 can have information PDAF1, and the fourth sub-pixel SPXL22 can have information PDAF2.

[0266] In contrast, the first sub-pixel SPXL11 and the third sub-pixel SPXL21 that do not share a microlens do not have the PDAF information.

[0267] According to the fourth embodiment, similar to the effects of the first embodiment, crosstalk between adjacent sub-pixels is reduced, the influence of brightness shadows can be suppressed, and the decrease in sensitivity of the optical center can be suppressed. In addition, a usable PDAF function can be realized by sub-pixels sharing one microlens.

[0268] (Fifth Embodiment)

[0269] Fig.13 (A) to (C) are diagrams showing schematic configuration examples of a solid-state imaging device (CMOS image sensor) according to the fifth embodiment.

[0270] Fig.13 (A) is a diagram showing a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as a sensor in which multiple pixels are partially provided with a PDAF function.

[0271] Fig.13 (B) Yes Fig.13 (A) is a simplified cross-sectional view of the line x11-x12.

[0272] Fig.13 (C) Yes Fig.13 (A) is a simplified cross-sectional view along the y11-y12 line.

[0273] The fifth embodiment is different from the fourth embodiment in the following points.

[0274] In the fourth embodiment, the optical center of the first microlens MCL221C is, for example, located in the central region CT12 of the boundary region RBD12 between the first photoelectric conversion region PD11 of the first subpixel SPXL11 and the second photoelectric conversion region PD12 of the second subpixel SPXL12 .

[0275] Moreover, a portion of the central area CT12 of the boundary area RBD12 included in the optical center of the first separation portion 251C of the first back separation portion 250C (and the first separation portion 261C of the second back separation portion 260C) configured in the boundary area RBD12 is set as a low-reflection portion, and the low-reflection portion is formed by a material with low reflection (high light absorption) compared to other back separation portions outside the optical center area.

[0276] In contrast, in the fifth embodiment, not only the optical center area is set as a low-reflection portion, but the entire first separation portion 251G of the first back separation portion 250G is set as a low-reflection portion, and the low-reflection portion is formed of a low-reflection (high light absorption) material.

[0277] Similarly, the entire first separation portion 261G of the second rear side separation portion 260G may be a low-reflection portion, and the low-reflection portion may be formed of a material with low reflection (high light absorption).

[0278] Furthermore, the same structure can also be applied to the first modification example, the second modification example and the third modification example.

[0279] According to the fifth embodiment, the same effects as those of the fourth embodiment can be obtained. Even if the optical center of the microlens is located at the formation position of the back metal BSM, the sensitivity of the optical center can be further suppressed from being sharply reduced due to reflection or the like.

[0280] (Sixth Embodiment)

[0281] Fig.14 (A) to (C) are diagrams showing schematic configuration examples of a solid-state imaging device (CMOS image sensor) according to the sixth embodiment.

[0282] Fig.14 (A) is a diagram showing a schematic arrangement example of components of a solid-state imaging device (CMOS image sensor) formed as a sensor in which multiple pixels are partially provided with a PDAF function.

[0283] Fig.14 (B) Yes Fig.14 (A) is a simplified cross-sectional view of the line x11-x12.

[0284] Fig.14 (C) Yes Fig.14 (A) is a simplified cross-sectional view along the y11-y12 line.

[0285] The sixth embodiment is different from the fourth and fifth embodiments in the following points.

[0286] In the fourth and fifth embodiments, the first back separation portion 250C, the first separation portion 251C, and the central area CT12 of the boundary area RBD12 included in the optical center of the first back separation portion 250C, the first separation portion 251C, and G of the boundary area RBD12 between the first photoelectric conversion region PD11 of the first sub-pixel SPXL11 and the second photoelectric conversion region PD12 of the second sub-pixel SPXL12 are set as a low-reflection portion, and the low-reflection portion is formed of a material with low reflection (high light absorption) compared to other back separation portions outside the optical center area, or not only the optical center area portion is set as a low-reflection portion, but the first back separation portion 250C, the first separation portion 251C, and G as a whole are set as a low-reflection portion, and the low-reflection portion is formed of a material with low reflection (high light absorption).

[0287] In contrast, in the sixth embodiment, the material of the back metal portion BSM1 forming the low reflection portion of the first separation portion 251H of the first back separation portion 250H is removed to achieve a low reflection (high light absorption) state.

[0288] Furthermore, the same structure can also be applied to the first modification example, the second modification example and the third modification example.

[0289] According to the sixth embodiment, the same effects as those of the fourth and fifth embodiments can be obtained. Even if the optical center of the microlens is located at the formation position of the back metal BSM, the sensitivity of the optical center can be further suppressed from dropping sharply due to reflection or the like.

[0290] (Seventh Embodiment)

[0291] Fig.15 This is a diagram showing a schematic configuration example of a solid-state imaging device (CMOS image sensor) according to the seventh embodiment.

[0292] The seventh embodiment differs from the fourth embodiment in the following points.

[0293] In the fourth embodiment, it includes a first microlens MCL221C for allowing light to enter the first photoelectric conversion region PD11 of two first sub-pixels SPXL11 and the second photoelectric conversion region PD12 of the second sub-pixel SPXL12, a second microlens MCL222C for allowing light to enter the third photoelectric conversion region PD21 of the third sub-pixel SPXL21, and a third microlens MCL223C for allowing light to enter the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPCL22.

[0294] Moreover, a portion of a central area CT12 of the boundary area RBD12 included in the optical center of the first separation portion 251C of the first back separation portion 250C (and the first separation portion 261C of the second back separation portion 260C) of the boundary area RBD12 between the first photoelectric conversion region PD11 of the first sub-pixel SPXL11 and the second photoelectric conversion region PD12 of the second sub-pixel SPXL12 is set as a low-reflection portion, and the low-reflection portion is formed by a material with low reflection (high light absorption) compared to other back separation portions outside the optical center area.

[0295] In contrast, the solid-state imaging device 10I of the seventh embodiment is constructed such that the third sub-pixel SPXL21 and the fourth sub-pixel SPXL22 share a micro-lens MCL222I, and the two third sub-pixels SPXL21 and the fourth sub-pixel SPXL22 that share the micro-lens MCL222I may also partially have PDAF information.

[0296] Furthermore, first separators 251I and 261I having a low reflection portion in a central region CT12 thereof are formed at the boundary between the first photoelectric conversion region PD11 of the first subpixel SPXL11 and the second photoelectric conversion region PD12 of the second subpixel SPXL12.

[0297] Second separation portions 252I and 262I having a low reflection portion in a central region CT34 thereof are formed at a boundary between the third photoelectric conversion region PD21 of the third subpixel SPXL21 and the fourth photoelectric conversion region PD22 of the fourth subpixel SPXL22.

[0298] Third separation portions 253I and 263I having no low reflection portion are formed at the boundary portion between the first photoelectric conversion region PD11 of the first sub-pixel SPXL11 and the third photoelectric conversion region PD21 of the third sub-pixel SPXL21.

[0299] Fourth separation portions 254I and 264I having no low reflection portion are formed at the boundary portion between the second photoelectric conversion region PF12 of the second sub-pixel SPXL12 and the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPXL22.

[0300] in addition, Fig.15 The solid-state imaging device 10I can also be used with Figure 4 The solid-state imaging device is also formed as an M-NIR sensor.

[0301] In the solid-state imaging device 10I of the seventh embodiment, the two first subpixels SPXL11 and the second subpixel SPXL12 sharing the microlens MCL221I, and the third subpixel SPXL21 and the fourth subpixel SPXL22 sharing the microlens MCL222I may partially have PDAF information.

[0302] exist Fig.15 In the example, the first sub-pixel SPXL11 can have information PDAF1, the second sub-pixel SPXL12 can have information PDAF2, the third sub-pixel SPXL21 can have information PDAF3, and the fourth sub-pixel SPXL22 can have information PDAD4.

[0303] (Variation of Seventh Embodiment)

[0304] Fig.16 This is a diagram schematically showing a modified example of the solid-state imaging device (CMOS image sensor) according to the seventh embodiment.

[0305] exist Fig.16 A variation example includes a first microlens MCL221J for allowing light to enter the first photoelectric conversion region PD11 of two first sub-pixels SPXL11 and the third photoelectric conversion region PD21 of the third sub-pixel SPXL21, and a second microlens MCL222J for allowing light to enter the second photoelectric conversion region PD12 of the second sub-pixel SPXL12 and the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPXL22.

[0306] The optical center of the first microlens MCL221J is located in a central region CT13 of a boundary region RBD13 between the first photoelectric conversion region PD11 of the first subpixel SPXL11 and the second photoelectric conversion region PD21 of the third subpixel SPXL21 .

[0307] Moreover, a portion of the central area CT13 of the boundary area RBD13 included in the optical center of the first separation portion 253J of the first back separation portion 250J (and the first separation portion 263J of the second back separation portion 260J) configured in the boundary area RBD13 is set as a low-reflection portion, and the low-reflection portion is formed by a material with low reflection (high light absorption) compared to other back separation portions outside the optical center area.

[0308] The optical center of the second microlens MCL12 is located in a central region CT24 of a boundary region RBD24 between the second photoelectric conversion region PD12 of the second subpixel SPXL12 and the fourth photoelectric conversion region PD22 of the fourth subpixel SPXL22 .

[0309] Moreover, a portion of the central area CT24 of the boundary area RBD24 included in the optical center of the first separation portion 254J of the first back separation portion 250J (and the first separation portion 264J of the second back separation portion 260J) configured in the boundary area RBD24 is set as a low-reflection portion, and the low-reflection portion is formed by a material with low reflection (high light absorption) compared to other back separation portions outside the optical center area.

[0310] In the present modification, first separation portions 251J and 261J having no low-reflection portion are formed at the boundary between the first photoelectric conversion region PD11 of the first sub-pixel SPXL11 and the second photoelectric conversion region PD12 of the second sub-pixel SPXL12.

[0311] Second separation portions 252J and 262J having no low-reflection portion are formed at the boundary portion between the third photoelectric conversion region PD21 of the third sub-pixel SPXL21 and the fourth photoelectric conversion region PD22 of the fourth sub-pixel SPXL22.

[0312] Third separating portions 253J and 263J having a low reflection portion in a central region CT13 thereof are formed at a boundary between the first photoelectric conversion region PD11 of the first subpixel SPXL11 and the third photoelectric conversion region PD21 of the third subpixel SPXL21.

[0313] Fourth separating portions 254J and 264J having a low reflection portion in the central region CT24 thereof are formed at the boundary between the second photoelectric conversion region PD12 of the second subpixel SPXL12 and the fourth photoelectric conversion region PD22 of the fourth subpixel SPXL22.

[0314] In this modification, the two first sub-pixels SPXL11 and the third sub-pixel SPXL21 that share the micro-lens MCL221J, and the second sub-pixel SPXL12 and the fourth sub-pixel SPXL22 that share the micro-lens MCL222J may partially have PDAF information.

[0315] exist Fig.16 In the example, the first sub-pixel SPXL11 can have information PDAF1, the third sub-pixel SPXL21 can have information PDAF2, the second sub-pixel SPXL12 can have information PDAF3, and the fourth sub-pixel SPXL22 can have information PDAD4.

[0316] According to the seventh embodiment, similar to the effects of the first and fourth embodiments, crosstalk between adjacent sub-pixels is reduced, the influence of brightness shadows can be suppressed, and the decrease in sensitivity of the optical center can be suppressed. In addition, a usable PDAF function can be realized by sub-pixels sharing one microlens.

[0317] Furthermore, in this embodiment, when the back side separation portion or the back side separation portion and the groove-type back side separation portion or the back side separation portion are removed near the optical center of multiple pixels sharing at least one microlens, the material of the groove-type back side separation portion can be replaced by a low-reflective material.

[0318] The solid-state imaging devices 10 and 10A to 10J described above can be applied as imaging devices to electronic devices such as digital cameras, video cameras, portable terminals, or surveillance cameras and medical endoscope cameras.

[0319] Fig.17 1 is a diagram showing an example of a configuration of an electronic device equipped with a camera system to which the solid-state imaging device according to an embodiment of the present invention is applied.

[0320] like Fig.17 As shown, the electronic device 100 includes a CMOS image sensor 110 to which the solid-state imaging devices 10 and 10A to 10J of the present embodiment can be applied.

[0321] Furthermore, the electronic device 100 includes an optical system (lens, etc.) 120 that guides incident light to a pixel region of the CMOS image sensor 110 (to form an image of a subject).

[0322] The electronic device 100 includes a signal processing circuit (PRC) 130 that processes an output signal of the CMOS image sensor 110 .

[0323] The signal processing circuit 130 performs predetermined signal processing on the output signal of the CMOS image sensor 110 .

[0324] The image signal processed by the signal processing circuit 130 may be displayed as a dynamic image on a monitor including a liquid crystal display or the like, or may be output to a printer, or may be in various forms, for example, directly recorded on a storage medium such as a memory card.

[0325] As described above, by mounting the solid-state imaging devices 10 and 10A to 10J as the CMOS image sensor 110 , a high-performance, compact, and low-cost camera system can be provided.

[0326] Furthermore, the present invention can be used in electronic devices such as surveillance cameras and medical endoscope cameras, which have limitations on camera installation conditions such as installation size, number of connectable cables, cable length, and installation height.

[0327] Main component symbols

[0328] 1, 1A to 1E, 10, 10A to 10J: Solid-state imaging devices

[0329] 20, 20A~20J: Pixel part

[0330] 30: Vertical scanning circuit

[0331] 40: Reading Circuit

[0332] 41: ADC

[0333] 42: Amplifier

[0334] 43: Sample and Hold (S / H) Circuit

[0335] 50: Horizontal scanning circuit

[0336] 60: Timing control circuit

[0337] 70: Reading unit

[0338] 100: Electronic devices

[0339] 110: CMOS Image Sensor

[0340] 120: Optical system

[0341] 130: Signal Processing Circuit (PRC)

[0342] 210, PD10: Photoelectric conversion unit

[0343] 211 (PD11): First photoelectric conversion region

[0344] 212 (PD12): Second photoelectric conversion region

[0345] 213 (PD13, PD21): Third photoelectric conversion region

[0346] 214 (PD14, PD22): Fourth photoelectric conversion region

[0347] 220: Lens

[0348] 230: Color filter department

[0349] 231: Green (G) filter area

[0350] 232: Red (R) filter area

[0351] 233: Blue (B) filter area

[0352] 234: Near infrared (NIR) filter area

[0353] 240. ARL: Anti-reflective film

[0354] 250, 250A to 250J: First back side separation portion

[0355] 251, 251A to 251J, 261, 261A to 261J: First separation section

[0356] 252, 252A to 252J, 262, 262A to 262J: Second separation section

[0357] 253, 253A~253J, 263, 263A~263J: Third separation section

[0358] 254, 254A to 254J, 264, 264A to 264J: Fourth separation section

[0359] 260, 260A to 260J: Second back side separation portion

[0360] 270: Semiconductor substrate

[0361] 271: First substrate surface

[0362] 272: Second substrate surface

[0363] 2511: First low reflection part

[0364] 2511B, 2521B, 2531B, 2541B, 2611, 2621: Low reflection part

[0365] 2521: Second low reflection part

[0366] 2531: The third low reflection part

[0367] 2541: Fourth low reflection part

[0368] B: Blue

[0369] BDTI: Backside Deep Trench Isolation

[0370] BSM: Back Side Metal

[0371] BSM1~BSM4: Back metal part

[0372] CL11~CL14: midpoint

[0373] CT12, CT13, CT24, CT34: Central area

[0374] FD11: Floating diffusion layer

[0375] FLT-B: Blue (B) filter

[0376] FLT-G: Green (G) filter

[0377] FLT-R: Red (R) filter

[0378] G: Green

[0379] LG1~LG4、11~14:Length

[0380] LSGN: Vertical signal line

[0381] L11~L14: Outer edge

[0382] MCL1~MCL9, MCL221, MCL221I, MCL222I: Microlens

[0383] MCL221C~MCL221F, MCL221J: First micro lens

[0384] MCL222C~MCL222F, MCL222J: Second micro lens

[0385] MCL223C~MCL223F:Third micro lens

[0386] MPXL, MPXL1, MPXL1A~MPXL1E, MPXL20, MPXL20C: Multi-Pixel

[0387] NIR: Near Infrared

[0388] OCT1: Optical Center

[0389] OP11, OP12, OP21, OP22: Output

[0390] PCT: Central Point

[0391] PD: Photoelectric conversion region

[0392] PD1: First photoelectric conversion region

[0393] PD2: Second photoelectric conversion region

[0394] PD3: The third photoelectric conversion region

[0395] PD4: Fourth photoelectric conversion region

[0396] PDAF1~PDAF4: Information

[0397] R: Red

[0398] RBD12, RBD13, RBD24, RBD34: Border area

[0399] RCT10: Rectangular Region

[0400] ROCT1: optical center region

[0401] RPCT: Pixel Central Region

[0402] RST11, SEL11, TG11, TG12, TG21, TG22: control lines (or control signals)

[0403] RST11-Tr: Reset transistor

[0404] SEL11-Tr: Select transistor

[0405] SF11-Tr: Source follower transistor

[0406] SPXLB: B sub-pixel

[0407] SPXLG: G sub-pixel

[0408] SPXLM:M sub-pixel

[0409] SPXLNI: Near-infrared (NIR) sub-pixels

[0410] SPXLR:R sub-pixel

[0411] SPXL11: First sub-pixel

[0412] SPXL12: Second sub-pixel

[0413] SPXL21: Third sub-pixel

[0414] SPXL22: Fourth sub-pixel

[0415] TG11-Tr, TG12-Tr, TG21-Tr, TG22-Tr: Transfer transistor

[0416] VDD: Power supply line

[0417] VSL(PXLOUT): read voltage (signal)

[0418] X, Y, Z: direction

[0419] x1-x2, x11-x12, y1-y2, y11-y12: line

Claims

1. A solid-state imaging device, characterized in that include: a multi-pixel comprising at least two sub-pixels including a photoelectric conversion region, The multi-pixel comprises: A back separation portion, arranged at the light incident portion of the photoelectric conversion region, for separating adjacent sub-pixels, wherein the back separation portion is formed in a low-reflection manner in the optical center region, and the low-reflection manner is achieved by using a low-reflection material to reduce the decrease in sensitivity of the optical center; as well as a lens portion including a microlens for injecting light into a plurality of sub-pixel photoelectric conversion regions, wherein the optical center of the microlens is arranged at the position of the back separation portion to improve the photoelectric conversion efficiency and reduce brightness shadows; The first sub-pixel, the second sub-pixel, the third sub-pixel and the fourth sub-pixel of the multi-pixel are arranged in a square in the following manner, that is, In a first direction, the first sub-pixel is adjacent to the second sub-pixel, and the third sub-pixel is adjacent to the fourth sub-pixel, In a second direction orthogonal to the first direction, the first sub-pixel is adjacent to the third sub-pixel, and the second sub-pixel is adjacent to the fourth sub-pixel, The lens unit includes a first microlens that allows light to enter a first photoelectric conversion region of the first sub-pixel and a second photoelectric conversion region of the second sub-pixel. a second microlens for causing light to enter a third photoelectric conversion region of the third sub-pixel, and a third microlens that allows light to enter a fourth photoelectric conversion region of the fourth sub-pixel, The optical center of the first microlens is located at least in the central area of ​​the boundary area between the first photoelectric conversion region of the first sub-pixel and the second photoelectric conversion region of the second sub-pixel, or The lens unit includes a first microlens for allowing light to enter the first photoelectric conversion region of the first sub-pixel and the three photoelectric conversion regions of the third sub-pixel. a second microlens for allowing light to enter a second photoelectric conversion region of the second sub-pixel, and a third microlens that allows light to enter a fourth photoelectric conversion region of the fourth sub-pixel, The optical center of the first microlens is located at least in the central area of ​​the boundary area between the first photoelectric conversion region of the first sub-pixel and the third photoelectric conversion region of the third sub-pixel, or, The lens unit includes a first microlens that allows light to enter the third photoelectric conversion region of the third sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel. a second microlens for allowing light to enter the first photoelectric conversion region of the first sub-pixel, and a third microlens that allows light to enter the second photoelectric conversion region of the second sub-pixel, The optical center of the first microlens is located at least in the central area of ​​the boundary area between the third photoelectric conversion region of the third sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel, or, The lens unit includes a first microlens for allowing light to enter the second photoelectric conversion region of the second sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel. a second microlens for allowing light to enter the first photoelectric conversion region of the first sub-pixel, and a third microlens that allows light to enter a third photoelectric conversion region of the third sub-pixel, The optical center of the first microlens is located at least in the central area of ​​a boundary area between the second photoelectric conversion region of the second sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel.

2. The solid-state imaging device according to claim 1, wherein: The back side separation portion is formed in such a way that the reflection is lower in the optical center region than in other regions of the back side separation portion.

3. The solid-state imaging device according to claim 1, wherein: The rear side separation portion is formed so that the optical center region and other rear side separation portion regions have low reflection.

4. The solid-state imaging device according to any one of claims 1 to 3, characterized in that: The low reflection portion formed so as to achieve the above-mentioned low reflection is formed of a low reflection material in a specific wavelength band.

5. The solid-state imaging device according to any one of claims 1 to 3, characterized in that: The back side separation portion has a material for the back side separation portion removed so as to have low reflection.

6. The solid-state imaging device according to any one of claims 1 to 3, characterized in that: The multi-pixel further includes a trench-type back side separation portion formed in the photoelectric conversion region so as to overlap with the back side separation portion in a depth direction of the photoelectric conversion region.

7. The solid-state imaging device according to claim 6, wherein: The groove-type back surface isolation region is formed to achieve the low reflection.

8. The solid-state imaging device according to claim 6, wherein: When the back separation portion or the back separation portion and the groove-type back separation portion or the back separation portion are removed near the optical center of multiple pixels sharing at least one of the lens portions, the material of the groove-type back separation portion can be replaced by a low-reflective material.

9. A method for manufacturing a solid-state imaging device, characterized in that The solid-state imaging device comprises: a multi-pixel comprising at least two sub-pixels including a photoelectric conversion region, The multi-pixel comprises: a back side separator, provided at a light incident portion of the photoelectric conversion region, for separating adjacent sub-pixels, wherein the back side separator is formed in a low-reflection manner in the optical center region, the low-reflection manner being achieved by using a low-reflection material to reduce a decrease in sensitivity in the optical center; and a lens portion including a microlens for injecting light into a plurality of sub-pixel photoelectric conversion regions, wherein the optical center of the microlens is arranged at the position of the back separation portion to improve the photoelectric conversion efficiency and reduce brightness shadows, The manufacturing method of the solid-state imaging device comprises the following steps: The optical center of the lens portion is arranged so as to be located at a position where the back side separation portion is formed. The back separation portion is formed in a manner that at least in the optical center area, the reflection is low compared to other areas of the back separation portion. The first sub-pixel, the second sub-pixel, the third sub-pixel and the fourth sub-pixel of the multi-pixel are arranged in a square in the following manner, that is, In a first direction, the first sub-pixel is adjacent to the second sub-pixel, and the third sub-pixel is adjacent to the fourth sub-pixel, In a second direction orthogonal to the first direction, the first sub-pixel is adjacent to the third sub-pixel, and the second sub-pixel is adjacent to the fourth sub-pixel, The lens unit includes a first microlens that allows light to enter a first photoelectric conversion region of the first sub-pixel and a second photoelectric conversion region of the second sub-pixel. a second microlens for causing light to enter a third photoelectric conversion region of the third sub-pixel, and a third microlens that allows light to enter a fourth photoelectric conversion region of the fourth sub-pixel, The optical center of the first microlens is located at least in the central area of ​​the boundary area between the first photoelectric conversion region of the first sub-pixel and the second photoelectric conversion region of the second sub-pixel, or The lens unit includes a first microlens for allowing light to enter the first photoelectric conversion region of the first sub-pixel and the three photoelectric conversion regions of the third sub-pixel. a second microlens for allowing light to enter a second photoelectric conversion region of the second sub-pixel, and a third microlens that allows light to enter a fourth photoelectric conversion region of the fourth sub-pixel, The optical center of the first microlens is located at least in the central area of ​​the boundary area between the first photoelectric conversion region of the first sub-pixel and the third photoelectric conversion region of the third sub-pixel, or, The lens unit includes a first microlens that allows light to enter the third photoelectric conversion region of the third sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel. a second microlens for allowing light to enter the first photoelectric conversion region of the first sub-pixel, and a third microlens that allows light to enter the second photoelectric conversion region of the second sub-pixel, The optical center of the first microlens is located at least in the central area of ​​the boundary area between the third photoelectric conversion region of the third sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel, or, The lens unit includes a first microlens for allowing light to enter the second photoelectric conversion region of the second sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel. a second microlens for allowing light to enter the first photoelectric conversion region of the first sub-pixel, and a third microlens that allows light to enter a third photoelectric conversion region of the third sub-pixel, The optical center of the first microlens is located at least in the central area of ​​a boundary area between the second photoelectric conversion region of the second sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel.

10. An electronic device, characterized in that include: Solid-state camera device; as well as an optical system for forming an image of a subject in the solid-state imaging device, The solid-state imaging device includes a multi-pixel including at least two sub-pixels including a photoelectric conversion region, The multi-pixel comprises: A back separation portion, arranged at the light incident portion of the photoelectric conversion region, for separating adjacent sub-pixels, wherein the back separation portion is formed in a low-reflection manner in the optical center region, and the low-reflection manner is achieved by using a low-reflection material to reduce the decrease in sensitivity of the optical center; as well as a lens portion including a microlens for injecting light into a plurality of sub-pixel photoelectric conversion regions, wherein the optical center of the microlens is arranged at the position of the back separation portion to improve the photoelectric conversion efficiency and reduce brightness shadows, The first sub-pixel, the second sub-pixel, the third sub-pixel and the fourth sub-pixel of the multi-pixel are arranged in a square in the following manner, that is, In a first direction, the first sub-pixel is adjacent to the second sub-pixel, and the third sub-pixel is adjacent to the fourth sub-pixel, In a second direction orthogonal to the first direction, the first sub-pixel is adjacent to the third sub-pixel, and the second sub-pixel is adjacent to the fourth sub-pixel, The lens unit includes a first microlens that allows light to enter a first photoelectric conversion region of the first sub-pixel and a second photoelectric conversion region of the second sub-pixel. a second microlens for causing light to enter a third photoelectric conversion region of the third sub-pixel, and a third microlens that allows light to enter a fourth photoelectric conversion region of the fourth sub-pixel, The optical center of the first microlens is located at least in the central area of ​​the boundary area between the first photoelectric conversion region of the first sub-pixel and the second photoelectric conversion region of the second sub-pixel, or The lens unit includes a first microlens for allowing light to enter the first photoelectric conversion region of the first sub-pixel and the three photoelectric conversion regions of the third sub-pixel. a second microlens for allowing light to enter a second photoelectric conversion region of the second sub-pixel, and a third microlens that allows light to enter a fourth photoelectric conversion region of the fourth sub-pixel, The optical center of the first microlens is located at least in the central area of ​​the boundary area between the first photoelectric conversion region of the first sub-pixel and the third photoelectric conversion region of the third sub-pixel, or, The lens unit includes a first microlens that allows light to enter the third photoelectric conversion region of the third sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel. a second microlens for allowing light to enter the first photoelectric conversion region of the first sub-pixel, and a third microlens that allows light to enter the second photoelectric conversion region of the second sub-pixel, The optical center of the first microlens is located at least in the central area of ​​the boundary area between the third photoelectric conversion region of the third sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel, or, The lens unit includes a first microlens for allowing light to enter the second photoelectric conversion region of the second sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel. a second microlens for allowing light to enter the first photoelectric conversion region of the first sub-pixel, and a third microlens that allows light to enter a third photoelectric conversion region of the third sub-pixel, The optical center of the first microlens is located at least in the central area of ​​a boundary area between the second photoelectric conversion region of the second sub-pixel and the fourth photoelectric conversion region of the fourth sub-pixel.

Images