Support unit and substrate processing device including the support unit

Abstract

The present invention relates to a support unit and a substrate processing device including the support unit. A support unit is provided in a device for processing a substrate using plasma, the support unit comprising: a dielectric plate on which the substrate is placed; an electrode plate provided below the dielectric plate; a power supply rod applying power to the electrode plate; and a flange having a shape surrounding the power supply rod and spaced apart from the power supply rod.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application requests Korean Patent Application No. 10-2019-0079203 filed on July 2, 2019 in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the inventive concepts described herein are directed to a support unit and a substrate treating apparatus including the support unit. Background Art

[0004] Plasma is generated by heating a neutral gas to a very high temperature or subjecting the neutral gas to a strong electric field or a radiofrequency (RF) electromagnetic field, and the plasma refers to an ionized gaseous state of a substance containing ions, electrons, and free radicals. Semiconductor element manufacturing processes may include etching processes and ashing processes using plasma, etc. A process of processing a substrate, such as a wafer, using plasma is performed by collision of ions and free radicals contained in the plasma with the substrate.

[0005] Generally, an apparatus for processing a substrate using plasma includes an electrode and a lower electrode to excite a gas into plasma. Figure 1 As shown, a conventional device for processing a substrate using plasma includes an electrostatic chuck 1 supporting a substrate. The electrostatic chuck 1 includes a lower electrode 2, an insulating member 3 and a conductive member 4. The conductive member 4 is grounded. The lower electrode 2 is coupled to an RF rod 5. The lower electrode 2 is electrically connected to the RF rod 5. The RF rod 5 is connected to a power supply 6. The power supply 6 applies RF power to the RF rod 5. That is, the RF rod 5 applies RF power to the lower electrode 2. Typically, the substrate is supported on the lower electrode 2. That is, the lower electrode 2 can allow plasma to be generated above the substrate. RF current flows through the RF rod 5 connected to the power supply 6. The RF current flows along the surface of the RF rod 5. The dispersion of the electric field occurs in an area A where the RF rod 5 and the lower electrode 2 are in contact with each other. Due to the dispersion of the electric field, when viewed from above, the RF current delivered to the lower electrode 2 is delivered to the area of ​​the lower electrode 2 differently. Therefore, an electric field is generated unevenly above the substrate. Therefore, uniformity of plasma generated above the substrate is reduced, which results in reduced efficiency in processing the substrate. Summary of the invention

[0006] Embodiments of the inventive concept provide a supporting unit for efficiently processing a substrate, and a substrate processing apparatus including the supporting unit.

[0007] Furthermore, embodiments of the present inventive concept provide a support unit for minimizing electric field spreading in a region where an electrode plate and a power supply rod are connected to each other, and a substrate processing apparatus including the support unit.

[0008] In addition, embodiments of the inventive concept provide a support unit for providing an additional control factor in adjusting density of plasma generated above a substrate, and a substrate treating apparatus including the support unit.

[0009] The technical problems to be solved by the inventive concept are not limited to the above problems, and any other technical problems not mentioned herein will be clearly understood by those skilled in the art to which the inventive concept belongs from the following description.

[0010] According to an exemplary embodiment, a support unit is provided in an apparatus for processing a substrate using plasma, the support unit including: a dielectric plate on which the substrate is placed; an electrode plate provided below the dielectric plate; a power rod applying power to the electrode plate; and a flange having a shape surrounding the power rod and spaced apart from the power rod.

[0011] According to an embodiment, the flange may be grounded.

[0012] According to an embodiment, the flange may be provided to surround a portion of the power supply rod and may be moved in an up-and-down direction by a lifting member.

[0013] According to one embodiment, the lifting member may include: a cylinder, which includes a cam shaft, which is movable in a first direction; and a roller shaft, which is in contact with the cam shaft and is movable in a second direction different from the first direction through the movement of the cam shaft.

[0014] According to an embodiment, the flange may be coupled to the roller shaft.

[0015] According to one embodiment, the lifting member may include: a rack connected to an actuator, the rack being movable in a first direction; and a pinion engaged with the rack, the pinion being movable in a second direction different from the first direction through movement of the rack.

[0016] According to an embodiment, the lifting member may further include: a lifting shaft connected to the pinion gear, and the lifting shaft extends in the second direction; and the flange may be connected to the lifting shaft.

[0017] According to an embodiment, the rack may have a shape inclined upward with respect to the first direction.

[0018] According to one embodiment, the lifting member may include: a motor including a driving shaft; a pair of bevel gears connected to the driving shaft; and a lifting shaft that moves in an up-and-down direction by rotation of the pair of bevel gears.

[0019] According to an embodiment, the flange may have a cylindrical shape open at the top and the bottom.

[0020] According to an embodiment, the flange may include a first body and a second body extending from a lower end of the first body in a lateral direction.

[0021] According to one embodiment, the flange may be formed of an electrically conductive material.

[0022] According to an exemplary embodiment, an apparatus for processing a substrate includes: a chamber having a processing space therein; a support unit that supports the substrate in the processing space; a gas supply unit that supplies gas into the processing space; and a plasma source that generates plasma from the gas. The support unit includes: a dielectric plate on which the substrate is placed; an electrode plate that is disposed below the dielectric plate; a power supply rod that applies power to the electrode plate; and a flange that has a shape surrounding the power supply rod and is spaced apart from the power supply rod.

[0023] According to an embodiment, the chamber may be grounded and the flange may be electrically connected to the chamber.

[0024] According to an embodiment, the chamber and the flange may be formed of an electrically conductive material.

[0025] According to an embodiment, the flange may be provided to surround a portion of the power supply rod and may be moved in an up-and-down direction by a lifting member.

[0026] According to one embodiment, the device may further include a controller for controlling the supporting unit, and the controller may control the lifting member to adjust the distance between the upper surface of the flange and the lower surface of the electrode plate according to the etching rate required for the substrate processed by the plasma.

[0027] According to an embodiment, when increasing the etching rate of the substrate processed by the plasma, the controller may control the lifting member to increase the distance between the upper surface of the flange and the lower surface of the electrode plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other objects and features will become apparent from the following description with reference to the following drawings, wherein like reference numerals refer to like parts throughout the various drawings unless otherwise specified, and wherein:

[0029] Figure 1 is a view showing a portion of an electrostatic chuck provided in an apparatus for processing a substrate using plasma;

[0030] Figure 2 is a view showing a substrate processing apparatus according to an embodiment of the present inventive concept;

[0031] Figure 3 It shows Figure 2 a view of the flange of the;

[0032] Figure 4 It shows Figure 2 A view of a lifting member;

[0033] Figure 5 shows the substrate etching rate according to the presence or absence of the flange, and the distance between the flange and the electrode plate;

[0034] Figure 6 It shows Figure 2 A view of a state where the flange is moved upward or downward;

[0035] Figure 7 is a view showing a lifting member according to another embodiment of the present inventive concept; and

[0036] Figure 8 is a view illustrating a lifting and lowering member according to still another embodiment of the present inventive concept. DETAILED DESCRIPTION

[0037] Hereinafter, the embodiments of the inventive concept will be described in detail with reference to the accompanying drawings so that the inventive concept can be easily implemented by those skilled in the art. However, the inventive concept can be implemented in various forms and is not limited to the embodiments described herein. In addition, in describing the embodiments of the inventive concept, when the detailed description related to the known function or configuration may make the subject matter of the inventive concept unnecessarily obscure, the detailed description is omitted. In addition, throughout the accompanying drawings, components that perform similar functions and operations are provided with the same reference numerals.

[0038] The terms "include" and "comprise" in the specification are "open" expressions, which are only used to illustrate the existence of corresponding components, and unless there is a specific description to the contrary, they do not exclude but may include additional components. Specifically, it should be understood that the terms "include", "comprise" and "have", when used in this document, specifically refer to the existence of the features, integers, steps, operations, components and / or parts, but do not exclude the existence or addition of one or more other features, integers, steps, operations, components, parts and / or groups thereof.

[0039] Unless otherwise specified, terms in the singular may include plural forms. Furthermore, in the drawings, the shapes and sizes of components may be exaggerated for clarity of illustration.

[0040] However, the present invention can be implemented in different forms and should not be understood as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that the present invention will be thorough and complete, and these embodiments will fully convey the scope of the present invention to those skilled in the art. In the accompanying drawings, the size of the components is exaggerated for clarity of illustration.

[0041] In an embodiment of the present inventive concept, a substrate processing apparatus for etching a substrate using plasma will be described. However, not limited thereto, the present inventive concept is applicable to various types of apparatuses for performing a process by supplying plasma into a chamber.

[0042] Figure 2 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the inventive concept. Figure 2 The substrate processing apparatus 10 processes a substrate W using plasma. The substrate processing apparatus 10 includes a chamber 100 , a support unit 200 , a showerhead unit 300 , a gas supply unit 400 , a plasma source, a liner unit 500 , a baffle unit 600 , and a controller 700 .

[0043] The chamber 100 has a processing space 102 therein, in which a substrate processing process is performed. The chamber 100 is arranged in a closed shape. The chamber 100 may be formed by a conductive material. For example, the chamber 100 may be formed by a metal-containing material. The chamber 100 may be formed by an aluminum material. The chamber 100 may be grounded. The chamber 100 has a discharge hole 104 formed in its bottom. The discharge hole 104 is connected to a discharge line 151. The discharge line 151 is connected to a pump (not shown). The reaction byproducts produced in the substrate processing process and the gas staying in the inner space of the chamber 100 can be released to the outside through the discharge line 151. The pressure in the chamber 100 is reduced to a predetermined pressure by the discharge process. Alternatively, a separate pressure-reducing member (not shown) may be arranged to reduce the pressure in the processing space 102 to a predetermined pressure.

[0044] A heater (not shown) is provided in the wall of the chamber 100. The heater heats the wall of the chamber 100. The heater is electrically connected to a heating power source (not shown). The heater generates heat by resisting the current applied by the heating power source. The heat generated from the heater is transferred to the inner space. The temperature in the processing space 102 is maintained at a predetermined temperature by the heat generated from the heater. The heater is implemented with a heating wire in the shape of a coil. A plurality of heaters can be provided in the wall of the chamber 100.

[0045] The support unit 200 is located in the chamber 100. The support unit 200 supports the substrate W in the processing space 102. The support unit 200 may be implemented as an electrostatic chuck that clamps the substrate W using an electrostatic force. The support unit 200 includes a dielectric plate 210, an electrode plate 220, a lower cover 230, a lower support member 240, a ring member 250, a flange 260, and a lifting member 270.

[0046] The substrate W is placed on the dielectric plate 210. The dielectric plate 210 has a circular plate shape. The dielectric plate 210 may be formed of a dielectric. The dielectric plate 210 receives external power and applies an electrostatic force on the substrate W. The dielectric plate 210 is equipped with an electrostatic electrode 211. The electrostatic electrode 211 is electrically connected to a clamping power supply 213. The clamping power supply 213 includes a direct current (DC) power supply. A switch (not shown) may be installed between the electrostatic electrode 211 and the clamping power supply 213. The electrostatic electrode 211 may be electrically connected to the clamping power supply 213 by turning the switch on / off. When the switch is turned on, a DC current is applied to the electrostatic electrode 211. An electrostatic force acts between the electrostatic electrode 211 and the substrate W by the current applied to the electrostatic electrode 211. The substrate W may be clamped and / or fixed to the dielectric plate 210 by an electrostatic force.

[0047] The electrode plate 220 is disposed below the dielectric plate 210. The upper surface of the electrode plate 220 may be in contact with the lower surface of the dielectric plate 210. The electrode plate 220 may have a circular plate shape. The electrode plate 220 is formed of a conductive material. For example, the electrode plate 220 may be formed of an aluminum material. In addition, a fluid channel (not shown) for controlling the temperature of the electrode plate 220 to a predetermined temperature may be formed in the electrode plate 220. A cooling fluid may flow through the fluid channel.

[0048] The power rod 221 can apply power to the electrode plate 220. The power rod 221 can be electrically connected to the electrode plate 220. The power rod 221 can be connected to the lower power supply 223. The lower power supply 223 can be implemented as a high-frequency power supply that generates high-frequency power. The high-frequency power supply can be implemented as an RF power supply. The RF power supply can be a high bias power RF power supply. The power rod 221 receives RF power from the lower power supply 223. The electrode plate 220 electrically connected to the power rod 221 can be used as a lower electrode. The power rod 221 can be formed of a conductive material. For example, the power rod 221 can be formed of a metal-containing material. The power rod 221 can be a metal rod. In addition, the power rod 221 can be connected to a matcher 225. The power rod 221 can be connected to the lower power supply 223 through the matcher 225. The matcher 225 can perform impedance matching.

[0049] The lower cover 230 supports the electrode plate 220. The lower cover 230 may be arranged to contact the side surface of the electrode plate 220. The lower cover 230 may be arranged to contact the edge area of ​​the lower surface of the electrode plate 220. For example, the lower cover 230 may have a cylindrical shape opened at the top and the bottom. In addition, the lower cover 230 may have a step on its inner side so that the electrode plate 220 is supported by the lower cover 230. The lower cover 230 may be formed of an insulating material.

[0050] The lower support member 240 is disposed below the lower cover 230. The lower support member 240 is disposed below the lower cover 230 to support the lower cover 230. The lower support member 240 may be formed of a conductive material. For example, the lower support member 240 may be formed of a metal-containing material. In addition, the lower support member 240 may be electrically connected to the chamber 100.

[0051] The ring member 250 is disposed on an edge region of the support unit 200. The ring member 250 has a ring shape. The ring member 250 may be disposed to surround an edge region of an upper surface of the dielectric plate 210. In addition, the ring member 250 may be disposed to surround a side surface of the dielectric plate 210. In addition, the ring member 250 may be disposed on an upper surface of the lower cover 230. The ring member 250 may be provided as a focus ring.

[0052] The flange 260 is provided to surround the power supply bar 221. The flange 260 may be provided to surround a portion of the power supply bar 221. That is, the flange 260 has a shape surrounding the power supply bar 221. In addition, the flange 260 is provided to be spaced apart from the power supply bar 221. Figure 3 , the flange 260 may have a cylindrical shape opened at the top and the bottom. The flange 260 may include a first body 261 and a second body 262. The first body 261 may have a cylindrical shape opened at the top and the bottom. The second body 262 may extend from the lower end of the first body 261 in the lateral direction. When viewed from above, the first body 261 and the second body 262 may have a ring shape. The flange 260 may have an insertion hole 264 formed therein. A portion of the power bar 221 may be inserted into the insertion hole 264.

[0053] Refer again Figure 2 , the flange 260 may be formed of a conductive material. The flange 260 may be formed of a metal-containing material. The flange 260 may be grounded. For example, the flange 260 may be electrically connected to the lower support member 240. In addition, the lower support member 240 may be electrically connected to the chamber 100. The chamber 100 may be grounded. That is, the flange 260 may be grounded by being electrically connected to the chamber 100.

[0054] The lifting member 270 may vertically move the flange 260. The lifting member 270 may adjust the distance between the upper surface of the flange 260 and the lower surface of the electrode plate 220 by vertically moving the flange 260. In addition, the lifting member 270 may receive a control signal output by the controller 700, which will be described below, and may vertically move the flange 260. The lifting member 270 may be provided in the lower support member 240.

[0055] Figure 4 It shows Figure 2 View of the lifting components. Figure 4, the lifting member 270 may include a cylinder 271, a camshaft 273, a roller shaft 275, an elastic body 277, and a shock-absorbing pin 279. The cylinder 271 may include a camshaft 273. The camshaft 273 has a shape in which the upper surface of the head is inclined. The cylinder 271 may move the camshaft 273 in the first direction by air pressure or hydraulic pressure. However, it is not limited thereto, and the cylinder 271 may be implemented with various known cylinders. The roller shaft 275 may have a roller at one end thereof. One end of the roller shaft 275 provided with a roller may contact the camshaft 273. Specifically, one end of the roller shaft 275 provided with a roller may contact the upper surface of the camshaft 273. The opposite end of the roller shaft 275 may be coupled with the flange 260. The cam shaft 273 may be moved in a first direction by air pressure or hydraulic pressure applied by the cylinder 271, and the roller shaft 275 in contact with the cam shaft 273 may be moved in a second direction, which is different from the first direction. The second direction may be a direction perpendicular to the first direction. When the roller shaft 275 moves in the second direction, the flange 260 coupled to the roller shaft 275 may be vertically moved.

[0056] The elastic body 277 may be provided on the lower surface of the flange 260. The elastic body 277 may be implemented as a spring. In addition, a shock absorbing pin 279 may be provided on the lower support member 240. The shock absorbing pin 279 may be provided to correspond to the position where the elastic body 277 is provided on the flange 260. The elastic body 277 and the shock absorbing pin 279 may prevent the flange 260 from colliding with the lower support member 240 when the flange 260 moves vertically.

[0057] Figure 5 The substrate etching rate according to the presence or absence of the flange and the distance between the flange and the electrode plate is shown. Figure 5 When viewed from above, the substrate can be divided into a central area C1, a middle area C2 and an edge area C3 according to the distance from the center of the substrate. Figure 5 The substrate etching rate by plasma according to the first condition L1, the second condition L2 and the third condition L3 is shown. The first condition L1 is the etching rate when the flange 260 is not provided. The second condition L2 is the etching rate when the flange 260 is provided and the upper surface of the flange 260 and the lower surface of the electrode plate 220 are spaced apart from each other at a first spacing. The third condition L3 is the etching rate when the flange 260 is provided and the upper surface of the flange 260 and the lower surface of the electrode plate 220 are spaced apart from each other at a second spacing. The first spacing may be smaller than the second spacing.

[0058] Comparing the etching rate in the first condition L1 with the etching rate in the second condition L2, it can be seen that the etching rate difference between the central area C1, the middle area C2 and the edge area C3 in the first condition L1 is greater than the etching rate difference between the central area C1, the middle area C2 and the edge area C3 in the second condition L2. That is, when the flange 260 is set, an electric field is generated between the upper surface of the flange 260 and the lower surface of the electrode plate 220. The generated electric field is generated at a relatively small spacing. That is, the electric field generated between the upper surface of the flange 260 and the lower surface of the electrode plate 220 interferes with the distribution of the electric field in the area where the power rod 221 and the electrode plate 220 are connected to each other. Therefore, a relatively uniform electric field is formed above the electrode plate 220, and the plasma density generated above the electrode plate 220 becomes uniform. Since the plasma density generated above the substrate becomes uniform, the etching rate for the substrate also becomes uniform.

[0059] Comparing the etching rate in the second condition L2 with the etching rate in the third condition L3, it can be seen that the etching rate in the second condition L2 is lower than the etching rate in the third condition L3. Figure 6 As shown, the etching rate for the substrate can be adjusted by raising or lowering the flange 260. When the flange 260 is moved vertically, the spacing between the flange 260 and the electrode plate 220 changes. That is, the impedance between the flange 260 and the electrode plate 220 is adjusted, and the phase of the impedance is changed. Therefore, the etching rate for the substrate can be adjusted. The controller 700 can control the lifting member 270 to adjust the distance between the upper surface of the flange 260 and the lower surface of the electrode plate 220 according to the etching rate required for the substrate treated by plasma. For example, when increasing the etching rate for the substrate treated by plasma, the controller 700 can control the lifting member 270 to increase the distance between the upper surface of the flange 260 and the lower surface of the electrode plate 220. That is, the embodiments of the inventive concept can provide additional factors that can adjust the etching rate for the substrate.

[0060] Refer again Figure 2 The showerhead unit 300 may disperse the gas supplied from above. In addition, the showerhead unit 300 may allow the gas supplied by the gas supply unit 400 to be uniformly supplied into the processing space 102. The showerhead unit 300 includes a showerhead 310 and a gas distribution plate 320.

[0061] The showerhead 310 is disposed below the gas distribution plate 320. The showerhead 310 is spaced a predetermined distance downward from the top of the chamber 100. The showerhead 310 is located above the support unit 200. A predetermined space is formed between the showerhead 310 and the top of the chamber 100. The showerhead 310 may be disposed in a plate shape having a constant thickness. The bottom surface of the showerhead 310 may be anodized to prevent arcing caused by plasma. The cross-section of the showerhead 310 may have the same shape and cross-sectional area as the support unit 200. A plurality of gas supply holes 312 are formed in the showerhead 310. The gas supply holes 312 may be vertically formed through the upper and lower surfaces of the showerhead 310.

[0062] The shower head 310 may be formed of a material that generates a compound by reacting with plasma generated from a gas supplied by the gas supply unit 400. For example, the shower head 310 may be formed of a material that generates a compound by reacting with ions having the highest electronegativity among ions contained in the plasma. For example, the shower head 310 may be formed of a material containing silicon (Si).

[0063] The gas distribution plate 320 is disposed on the top of the showerhead 310. The gas distribution plate 320 may be spaced a predetermined distance downward from the top of the chamber 100. The gas distribution plate 320 may diffuse the gas supplied from above. A gas introduction hole 322 may be formed in the gas distribution plate 320. The gas introduction hole 322 may be formed in a position corresponding to the above-mentioned gas supply hole 312. The gas introduction hole 322 may be connected to the gas supply hole 312. The gas supplied from above the showerhead unit 300 may pass through the gas introduction hole 322 and the gas supply hole 312 in sequence and may be supplied to the bottom of the showerhead 310. The gas distribution plate 320 may contain a metal material. The gas distribution plate 320 may be grounded. The gas distribution plate 320 may be used as an upper electrode by being grounded.

[0064] The insulating ring 380 is disposed to surround the outer circumference of the showerhead 310 and the gas distribution plate 320. The insulating ring 380 may be disposed in a circular ring shape as a whole. The insulating ring 380 may be formed of a non-metallic material.

[0065] The gas supply unit 400 supplies gas into the chamber 100. The gas supplied by the gas supply unit 400 may be excited into plasma by the plasma source. The gas supplied by the gas supply unit 400 may be a fluorine-containing gas. For example, the gas supplied by the gas supply unit 400 may be carbon tetrafluoride.

[0066] The gas supply unit 400 includes a gas supply nozzle 410, a gas supply line 420, and a gas reservoir 430. The gas supply nozzle 410 is installed in the center of the top of the chamber 100. The gas supply nozzle 410 has an injection opening formed in the bottom thereof. The process gas is supplied into the chamber 100 through the injection opening. The gas supply line 420 connects the gas supply nozzle 410 and the gas reservoir 430. The gas supply line 420 supplies the process gas stored in the gas reservoir 430 to the gas supply nozzle 410. A valve 421 is installed in the gas supply line 420. The valve 421 opens or closes the gas supply line 420 and adjusts the flow rate of the process gas supplied through the gas supply line 420.

[0067] The plasma source excites the process gas in the chamber 100 into plasma. In an embodiment of the present inventive concept, a capacitively coupled plasma (CCP) source is used as a plasma source. The capacitively coupled plasma source may include an upper electrode and a lower electrode in the chamber 100. The upper electrode and the lower electrode may be arranged in the chamber 100 in a vertical direction so as to be parallel to each other. One of the opposing electrodes may be applied with RF power, and the other may be grounded. An electric field may be formed in the space between the opposing electrodes, and the process gas supplied into the space may be excited into plasma. A process for processing the substrate W is performed by using plasma. According to one embodiment, the upper electrode may be set as a showerhead unit 300, and the lower electrode may be set as an electrode plate 220. RF power may be applied to the lower electrode, and the upper electrode may be grounded. Alternatively, RF power may be applied to the upper electrode and the lower electrode. Therefore, an electric field is generated between the upper electrode and the lower electrode. The generated electric field excites the process gas in the chamber 100 into plasma.

[0068] The liner unit 500 prevents the inner wall of the chamber 100 and the support unit 200 from being damaged during the process. The liner unit 500 prevents impurities generated during the process from being deposited on the inner wall of the chamber 100 and the support unit 200. The liner unit 500 includes an inner liner 510 and an outer liner 530.

[0069] The outer liner 530 is disposed on the inner wall of the chamber 100. The outer liner 530 has a space opened at the top and the bottom. The outer liner 530 may have a hollow cylindrical shape. The inner liner 530 may have a radius corresponding to the inner surface of the chamber 100. The outer liner 530 is disposed along the inner surface of the chamber 100.

[0070] The outer liner 530 may be formed of an aluminum material. The outer liner 530 protects the inner surface of the chamber 100. In a process in which the process gas is excited, arc discharge may occur inside the chamber 100. The arc discharge causes damage to the chamber 100. The outer liner 530 protects the inner surface of the chamber 100, thereby preventing the inner surface of the chamber 100 from being damaged by the arc discharge.

[0071] The liner 510 is disposed to surround the support unit 200. The liner 510 has a ring shape. The liner 510 is disposed to surround the dielectric plate 210, the electrode plate 220, the lower cover 230, and the lower support member 240. The liner 510 may be formed of an aluminum material. The liner 510 protects the outer surface of the support unit 200.

[0072] The baffle unit 600 is located between the inner wall of the chamber 100 and the support unit 200. The baffle unit 600 has a ring shape. The baffle unit 600 has a plurality of through holes formed therein. The process gas supplied into the chamber 100 passes through the through holes of the baffle unit 600 and is released through the exhaust hole 104. The flow of the process gas can be controlled according to the shape of the baffle unit 600 and the shape of the through holes.

[0073] The controller 700 may control the substrate processing device 10. The controller 700 may control the substrate processing device 10 so that the substrate processing device 10 performs a process of processing the substrate W. The controller 700 may control the substrate processing device 10 so that the substrate processing device 10 performs a process of processing the substrate W using plasma. For example, the controller 700 may control the substrate processing device 10 so that the gas supply unit 400 supplies the process gas and the plasma source excites the gas supplied by the gas supply unit 400. In addition, the controller 700 may control the lifting member 270. For example, the controller 700 may control the lifting member 270 so that the lifting member 270 vertically moves the flange 260. In addition, the controller 700 may control the lifting member 270 to adjust the distance between the upper surface of the flange 260 and the lower surface of the electrode plate 220 according to the etching rate required for the substrate W processed by plasma. For example, when increasing the etching rate for the substrate W processed by plasma, the controller 700 may control the elevating member 270 to increase the distance between the upper surface of the flange 260 and the lower surface of the electrode plate 220 .

[0074] Figure 7 2 is a view showing a lifting member according to another embodiment of the present inventive concept. Figure 7, the lifting member 280 may include a rack 281, a pinion 283, an actuator 285, a lifting shaft 286, an elastic body 287 and a shock absorbing pin 289. The rack 281 may be connected to the actuator 285. The actuator 285 may be a cylinder. The cylinder may be a cylinder driven by air pressure or hydraulic pressure. However, it is not limited thereto, and the actuator 285 may be implemented in various known devices capable of moving the rack 281. The rack 281 may be connected to the actuator 285 and may be moved in a first direction. The upper surface of the rack 281 may have an inclined shape. The pinion 283 may be engaged with the rack 281. In addition, the pinion 283 may be moved in a second direction different from the first direction by the movement of the rack 281. The second direction may be a direction perpendicular to the first direction. The pinion 283 may be connected to one end of the lifting shaft 286 extending in the second direction. The opposite end of the lifting shaft 286 may be connected to the lower surface of the flange 260. When the actuator 285 moves the rack 281 in the first direction, the pinion 283 moves in the second direction. When the pinion 283 moves in the second direction, the lifting shaft 286 moves in the second direction. When the lifting shaft 286 moves in the second direction, the flange 260 can move in the second direction, such as the vertical direction. The elastic body 287 and the vibration absorbing pin 289 can be the same or similar to the elastic body 277 and the vibration absorbing pin 279 described above. Therefore, a detailed description thereof will be omitted.

[0075] Figure 8 2 is a view showing a lifting member according to another embodiment of the present inventive concept. Figure 8 , the lifting member 290 may include a motor 291, a pair of bevel gears 293, a lifting shaft 295 and a bearing 296. The motor 291 may include a drive shaft 292. The motor 291 may be a stepping motor. However, it is not limited thereto, and the motor 291 may be implemented with various known devices. The drive shaft 292 of the motor 291 may be connected to the drive bevel gear 293. The pair of bevel gears 293 may change the rotational movement of the drive shaft 292 around the axis facing the first direction into the rotational movement of the axis facing the second direction. The second direction may be a direction perpendicular to the first direction. The lifting shaft 295 may be inserted into the drive bevel gear 293. One end of the lifting shaft 295 may be inserted into the bearing 296 provided on the lower surface of the flange 260. The lifting shaft 295 may have a thread formed on its outer circumferential surface. When the motor 291 rotates the drive shaft 292, the pair of bevel gears 293 rotates. When the paired bevel gears 293 rotate, the lifting shaft 295 inserted into the driving bevel gear 293 can move vertically. Therefore, the flange 260 can move vertically. The elastic body 297 and the vibration absorbing pin 299 can be the same or similar to the elastic body 277 and the vibration absorbing pin 279 described above. Therefore, a detailed description thereof will be omitted.

[0076] As described above, according to embodiments of the inventive concept, a support unit and a substrate processing apparatus may allow a substrate to be efficiently processed.

[0077] Furthermore, the support unit and the substrate processing apparatus may minimize the spread of an electric field in a region where the electrode plate and the power supply bar are connected to each other.

[0078] Additionally, the support unit and substrate processing apparatus may provide additional control factors in adjusting the density of the plasma generated above the substrate.

[0079] Effects of the inventive concept are not limited to the above-mentioned effects, and any other effects not mentioned herein can be clearly understood by those skilled in the art to which the inventive concept belongs from the present specification and the accompanying drawings.

[0080] The above description illustrates the inventive concept. In addition, the above content describes the exemplary embodiments of the inventive concept, and the inventive concept can be used in various other combinations, changes and environments. That is to say, without departing from the scope of the inventive concept disclosed in this specification, the equivalent scope of written disclosure, and / or the technology or knowledge scope of those skilled in the art, the inventive concept can be changed or modified. The written embodiment describes the best state of the technical spirit of implementing the inventive concept, and various changes required in the specific application and purpose of the inventive concept can be made. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed embodiment state. In addition, it should be understood that the attached claims include other embodiments.

[0081] Although the present invention has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the present invention. Therefore, it should be understood that the above embodiments are not restrictive, but illustrative.

Claims

1. A support unit, the support unit being provided in an apparatus for processing a substrate using plasma, the support unit comprising: a dielectric plate on which the substrate is placed; An electrode plate, the electrode plate being disposed below the dielectric plate; a power rod configured to apply power to the electrode plate; as well as a flange, the flange having a shape surrounding the power supply rod, the flange being spaced apart from the power supply rod; The flange is arranged to surround a portion of the power supply rod and is moved in an up-down direction by a lifting member; wherein the flange is grounded; and Wherein, the flange comprises: The first entity; and a second body extending from a lower end of the first body in a lateral direction; The lifting member includes an elastic body and a vibration absorbing pin, the elastic body is arranged on the lower surface of the flange, the vibration absorbing pin is located below the elastic body and connected to the elastic body, and the lifting member is configured to move the flange in the up and down directions to adjust the distance between the flange and the electrode plate.

2. The support unit according to claim 1, wherein: The lifting member comprises: a cylinder including a camshaft movable in a first direction; and A roller shaft is configured to contact the cam shaft, and the roller shaft is movable in a second direction different from the first direction through movement of the cam shaft.

3. The support unit according to claim 2, wherein: The flange is coupled to the roller shaft.

4. The support unit according to claim 1, wherein: The lifting member comprises: a rack connected to the actuator, the rack being movable in a first direction; and A pinion gear is engaged with the rack gear, the pinion gear being movable in a second direction different from the first direction by movement of the rack gear.

5. The support unit according to claim 4, wherein: The lifting member further includes a lifting shaft connected to the pinion gear and extending in the second direction; and Wherein, the flange is connected to the lifting shaft.

6. The support unit according to claim 4, wherein: The rack has a shape that is inclined upward with respect to the first direction.

7. The support unit according to claim 1, wherein: The lifting member comprises: a motor, the motor comprising a drive shaft; a pair of bevel gears connected to the drive shaft; and The lifting shaft is configured to move in the up-down direction by the rotation of the pair of bevel gears.

8. The support unit according to any one of claims 1 to 7, wherein: The flange has a cylindrical shape that is open at the top and the bottom.

9. The support unit according to any one of claims 1 to 7, wherein: The flange is formed of a conductive material.

10. An apparatus for processing a substrate, the apparatus comprising: a chamber having a processing space therein; a supporting unit configured to support the substrate in the processing space; a gas supply unit configured to supply gas into the processing space; and a plasma source configured to generate plasma from the gas, Wherein, the supporting unit comprises: a dielectric plate on which the substrate is placed; An electrode plate, the electrode plate being disposed below the dielectric plate; a power rod configured to apply power to the electrode plate; and a flange, the flange having a shape surrounding the power supply rod, the flange being spaced apart from the power supply rod; The flange is arranged to surround a portion of the power supply rod and is moved in an up-down direction by a lifting member; wherein the flange is grounded; and Wherein, the flange comprises: The first entity; and a second body extending from a lower end of the first body in a lateral direction; The lifting member includes an elastic body and a vibration absorbing pin, the elastic body is arranged on the lower surface of the flange, the vibration absorbing pin is located below the elastic body and connected to the elastic body, and the lifting member is configured to move the flange in the up and down directions to adjust the distance between the flange and the electrode plate.

11. The device according to claim 10, wherein: The chamber is grounded, and Wherein, the flange is electrically connected to the chamber.

12. The device according to claim 11, wherein The chamber and the flange are formed of an electrically conductive material.

13. The device according to claim 10, wherein: The device further comprises a controller configured to control the support unit, and The controller controls the lifting member to adjust the distance between the upper surface of the flange and the lower surface of the electrode plate according to an etching rate required for the substrate to be processed by the plasma.

14. The device according to claim 13, wherein: When increasing the etching rate for the substrate processed by the plasma, the controller controls the lifting member to increase the distance between the upper surface of the flange and the lower surface of the electrode plate.

15. The device according to claim 10, wherein: The flange is formed of a conductive material.

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