A micro-nanostructure that is sensitive to laser beams in a specific direction

Abstract

The present invention relates to a micro-nano structure sensitive to a laser beam in a specific direction, comprising a substrate, an insulating layer fixed on the substrate, two silicon wires parallel to each other and having the same shape and size are arranged on the insulating layer, and wires are led out at both ends of each silicon wire to be connected to a potentiometer. When the laser irradiates the silicon wire, a near-field coupling effect occurs between the silicon wire and the substrate, and a silicon wire closer to the laser light source is completely suppressed, while another silicon wire farther from the laser light source maintains brightness. The present invention can accurately detect laser signals at a specific angle and perform non-contact signal transmission along a specific direction.

Description

Technical Field

[0001] The present invention relates to the technical field of micro-nano photonic devices and microsystems, and in particular to a micro-nano structure that is sensitive to a laser beam in a specific direction. Background Art

[0002] In the micro-nano space, there are many inconveniences in how to achieve accurate detection at a certain angle and non-contact signal transmission along a specific direction. As optoelectronic devices develop in the direction of miniaturization, detection, measurement and signal transmission in the micro-nano space have encountered many technical difficulties, and the application of related products has a broad market space. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a micro-nano structure that is sensitive to a laser beam in a specific direction, accurately detects a laser signal at a specific angle, and performs non-contact signal transmission along a specific direction.

[0004] The technical solution adopted by the present invention to solve its technical problem is: to provide a micro-nano structure sensitive to a laser beam in a specific direction, including a substrate, an insulating layer fixed on the substrate, two silicon wires parallel to each other and having the same shape and size are arranged on the insulating layer, and wires are led out at both ends of each silicon wire to be connected to a potentiometer. When the laser irradiates the silicon wire, a near-field coupling effect occurs between the silicon wire and the substrate, and a silicon wire closer to the laser light source is completely suppressed, while the other silicon wire farther from the laser light source maintains brightness.

[0005] The distance between the two silicon wires is one fifth of the wavelength of the laser.

[0006] The thickness of the insulating layer is 15-20 nm.

[0007] The insulating layer is a transparent aluminum oxide isolation layer.

[0008] The substrate is a silver matrix in a rectangular parallelepiped shape.

[0009] Beneficial Effects

[0010] Due to the adoption of the above-mentioned technical scheme, the present invention has the following advantages and positive effects compared with the prior art: the present invention can be used in the micro-nanoscale space to accurately detect laser signals at a certain angle and to perform non-contact signal transmission along a specific direction, etc., and the structure has the advantages of resistance to magnetic fields, low latency, strong confidentiality and low energy consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 is a schematic diagram of an embodiment of the present invention;

[0012] Figure 2 is a front view of an embodiment of the present invention;

[0013] Figure 3 It is a top view of an embodiment of the present invention. DETAILED DESCRIPTION

[0014] The present invention will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms fall within the scope limited by the appended claims of the application equally.

[0015] The embodiments of the present invention relate to a micro-nanostructure that is sensitive to a laser beam in a specific direction, such as Figure 1 As shown, it includes a substrate, on which an insulating layer is fixed, on which two silicon wires parallel to each other and having the same shape and size are arranged, and wires are led out at both ends of each silicon wire to be connected to a potentiometer. When laser irradiates the silicon wire, a near-field coupling effect occurs between the silicon wire and the substrate, and a silicon wire closer to the laser light source is completely suppressed, while the other silicon wire farther from the laser light source maintains brightness.

[0016] Figure 1 In the figure, 1 and 2 are parallel wires made of silicon material, L1 is a parallel laser beam vertically projected onto silicon wire 1 and silicon wire 2 in space, L2 is a projection line obtained by projecting the parallel laser beam L1 onto the plane where silicon wire 1 and silicon wire 2 are located, θ is the incident angle (the acute angle between the parallel laser beam L1 and the normal of the plane where silicon wire 1 and silicon wire 2 are located), 7 is a transparent aluminum oxide isolation layer (insulating layer) with a certain thickness, and 8 is a silver substrate. Silicon wire 1 and silicon wire 2 are fixedly connected to isolation layer 7, and isolation layer 7 is fixedly connected to silver substrate 8. Among them, 3 and 4 are lead wires fixedly connected to both ends of silicon wire 1 and silicon wire 2, and 5 and 6 are potentiometers, which can measure the potential difference between both ends of silicon wire 1 and silicon wire 2 through lead wire 3 and lead wire 4, respectively.

[0017] When the laser shines on a single silicon wire, the silicon wire will be illuminated and a potential difference will be generated at both ends of the silicon wire. Figure 1In the example, for a laser parallel beam L1 of a specific wavelength (e.g., the wavelength range of the light source is 700-750nm), if the distance between the silicon wire 1 and the silicon wire 2 and the thickness of the aluminum oxide isolation layer 7 are appropriate (e.g., the distance between the wires 1 and 2 is one-fifth of the wavelength of the light, and the thickness of the aluminum oxide isolation layer 7 is 15-20nm), the two mutually parallel silicon wires 1 and 2 and the silver substrate 8 together form a resonator. Under the irradiation of the laser parallel beam L1, a near-field coupling effect will occur between the silicon wire 1, the silicon wire 2 and the silver substrate 8, and the brightness of the silicon wire 1 and the silicon wire 2 and the potential difference at both ends will change. According to the coupled mode theory, the potential difference at both ends of the silicon wire 1 and the silicon wire 2 is related to the incident angle θ. In particular, by carefully designing the parameters, the resonator amplitude can be completely suppressed at a certain incident angle θ0, that is, the potential difference at both ends of the silicon wire 1 closer to the light source tends to zero, while the potential difference at both ends of the silicon wire 2 farther from the light source does not change significantly. The laser incident angle θ0 at this position is called the coupled incident angle. In order to improve the detection sensitivity, the ratio of the potential difference between silicon wire 1 and silicon wire 2 can be used to determine whether the incident angle of the light is the coupling incident angle θ0: when the incident angle of the light is the coupling incident angle θ0, the ratio of the potential difference between silicon wire 1 and silicon wire 2 reaches an extreme value. Based on this principle, the structure can accurately detect the value of the coupling incident angle θ0, and can also be used to non-contactly receive signals in a specific direction in a small space.

[0018] exist Figure 2 and Figure 3 In the figure, 13 is a fixed position rectangular silver substrate, a transparent aluminum oxide isolation layer (insulating layer) 12 with a certain thickness is fixedly provided on the silver substrate 13, and two parallel silicon wires 11a and 11b with the same shape and size are fixedly provided on the transparent aluminum oxide isolation layer (insulating layer) 12, and the two ends of the silicon wire 11a are connected according to Figure 1 The lead wire 14a is provided to measure the potential difference between the two ends of the wire. The two ends of the silicon wire 11b are connected according to Figure 1 In principle, a lead wire 14b is provided to measure the potential difference between the two ends of the wire.

[0019] The structure of this embodiment can be processed by conventional photolithography technology. The main parameters include: the cross section of a single silicon wire is 60*100nm, the center spacing is 145nm, and the substrate 13 material is metallic silver. Using conventional micro-nano processing technology, on the SOI wafer, electron beam lithography is first used to etch out silicon nanowires, and then an aluminum oxide isolation layer (15-20nm) is deposited by ALD process, and then electron beam evaporation is used to deposit a silver substrate.

[0020] When the wavelength of the light source is 727nm and the incident angle is 50°, the silicon wire closer to the light source in the above structure can be completely suppressed (the silicon wire becomes darker and the potential difference between the two ends is close to zero), while the other silicon wire farther from the light source maintains a certain brightness and has a certain potential difference between the two ends.

[0021] It is not difficult to find that the present invention can be used in the micro-nanoscale space to accurately detect laser signals at a specific angle and perform non-contact signal transmission along a specific direction, etc. The structure has the advantages of magnetic field resistance, low latency, strong confidentiality and low energy consumption.

Claims

1. A micro-nano structure sensitive to a laser beam in a specific direction, characterized in that: The invention comprises a substrate, on which an insulating layer is fixedly arranged, on which two silicon wires which are parallel to each other and have the same shape and size are arranged, and wires are led out at both ends of each silicon wire to be connected to a potentiometer, and when laser irradiates the silicon wire, a near-field coupling effect occurs between the silicon wire and the substrate, and a silicon wire which is closer to the laser light source is completely suppressed, while another silicon wire which is farther from the laser light source maintains brightness; the distance between the two silicon wires is one fifth of the wavelength of the laser; the thickness of the insulating layer is 15-20nm; the insulating layer is a transparent aluminum oxide isolation layer; and the substrate is a rectangular silver matrix.

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