Substrate processing device and substrate processing method

Abstract

The present invention provides a substrate processing device. The device for processing a substrate may include: a chamber having an internal space; a base, the chamber supporting a substrate in the internal space; and an edge clamp, the edge clamp suppressing bending of the substrate supported by the base; and the edge clamp includes: an annular main body; a plurality of protrusions extending from the main body toward the inner side thereof, provided in a spaced relationship along the circumferential direction of the main body, and provided overlapping with the upper edge of the substrate supported by the base when viewed from above.

Description

Technical Field

[0001] The invention relates to a substrate processing device and a substrate processing method. Background Art

[0002] Generally speaking, in order to manufacture semiconductor devices or display panels, various processes such as etching, polishing, deposition, and cleaning are required to treat substrates using plasma.

[0003] In the process of general substrate processing, the substrate may bend or twist. The bent or twisted substrate is called substrate warpage. The substrate warpage occurs when the substrate is heated to a high temperature during the process, and the expanded substrate material shrinks unevenly, or when the substrate is thin.

[0004] If the plasma process is performed when the substrate W is warped, or if the substrate W is warped during the plasma process, a gap will be formed between the substrate W and the susceptor. Figure 1 As shown, local plasma is generated in the gap. The local plasma reduces the process efficiency of the substrate W, or generates arc discharge to damage the substrate W.

[0005] In addition, in the process of performing the plasma process on the substrate W, in order to suppress the warpage of the substrate W, Figure 2 As shown, a method of clamping the substrate W with a window clamp may be considered for the edge region of the substrate W. However, the edge of the substrate W is not exposed to the plasma at this time. Therefore, the plasma treatment on the edge of the substrate W cannot be properly performed. That is, when the substrate W is processed after the edge region of the substrate W is clamped with a window clamp, the photoresist coated on the edge of the substrate W cannot be removed, resulting in poor surface coating. Summary of the invention

[0006] Technical issues

[0007] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of efficiently processing a substrate.

[0008] In addition, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can minimize the situation where a process is performed in a state where the substrate is bent.

[0009] In addition, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can minimize the reduction in substrate processing efficiency in a substrate edge region.

[0010] The purpose of the present invention is not limited thereto, and other purposes not mentioned can be clearly understood by those skilled in the art from the following description.

[0011] Technical Solution

[0012] The present invention provides a substrate processing device. The device for processing a substrate may include: a chamber having an internal space; a base, the chamber supporting a substrate in the internal space; and an edge clamp, the edge clamp suppressing bending of the substrate supported by the base; and the edge clamp includes: an annular main body; a plurality of protrusions extending from the main body toward the inner side thereof, provided in a spaced relationship along the circumferential direction of the main body, and provided overlapping with the upper edge of the substrate supported by the base when viewed from above.

[0013] According to one embodiment, the protrusion may extend toward the center of the main body.

[0014] According to one embodiment, the protrusion may be provided spaced apart from an upper surface of the substrate supported by the base.

[0015] According to one embodiment, the lower surface of the protrusion may be provided to be spaced apart from the upper surface of the substrate supported by the susceptor when the substrate supported by the susceptor is in a flat state.

[0016] According to one embodiment, the body may be provided in a staggered manner downward from the center of the body viewed from above toward the outside of the body so that an edge region of the substrate supported by the base is inserted.

[0017] According to one embodiment, the device may further include a guide ring surrounding the base, and the body may be supported by the guide ring.

[0018] According to one embodiment, the top of the guide ring may include: an inner top provided at a height equal to or lower than the top of the base; and an outer top provided at a height higher than the top of the base; the main body may include: an inner bottom supported by the inner top; and an outer bottom supported by the outer top.

[0019] According to one embodiment, the guide ring may also include an upward inclined portion, which is inclined upward along a direction from the upper inner side toward the upper outer side, and the main body may also include a downward inclined portion, which is inclined downward along a direction from the lower outer side toward the lower inner side, and is provided in a shape corresponding to the upward inclined portion.

[0020] According to one embodiment, the apparatus may further include a plasma exciting portion that generates plasma and supplies the plasma to the inner space.

[0021] According to one embodiment, the protrusion may be provided in contact with an upper surface of a substrate supported by the susceptor during processing.

[0022] In addition, the present invention provides a substrate processing device. The device for processing a substrate may include: a device front-end module; and a processing module for processing a substrate; the device front-end module may include: a loading port for placing a container for accommodating a substrate; and a transfer frame, the transfer frame providing an index robot for transporting the substrate between the loading port and the processing module; the processing module may include: a clamping buffer, the clamping buffer is arranged adjacent to the device front-end module; a process chamber, the process chamber performs a processing process on the substrate; a transfer chamber, the transfer chamber has a transport robot for transporting the substrate between the process chamber and the clamping buffer; the clamping buffer may include : a substrate supporting member, which supports the substrate; and an edge clamp supporting member, which has a supporting end for supporting the edge clamp; the process chamber may include: a chamber, which has an internal space; a base, which supports the substrate in the internal space; the edge clamp, which suppresses the bending of the substrate supported by the base; and the edge clamp may include: an annular body; a plurality of protrusions, which extend from the body toward the inside thereof, are provided in a spaced relationship along the circumferential direction of the body, and are provided overlapping with the upper edge of the substrate supported by the base when viewed from above.

[0023] According to one embodiment, the protrusion may extend toward the center of the main body.

[0024] According to one embodiment, the protrusion may be provided spaced apart from an upper surface of the substrate supported by the base.

[0025] According to one embodiment, the lower surface of the protrusion may be provided to be spaced apart from the upper surface of the substrate supported by the susceptor when the substrate supported by the susceptor is in a flat state.

[0026] According to one embodiment, the body may be provided in a staggered manner downward from the center of the body viewed from above toward the outside of the body so that an edge region of the substrate supported by the base is inserted.

[0027] According to one embodiment, the device may further include a guide ring surrounding the base, and the body may be supported by the guide ring.

[0028] According to one embodiment, the top of the guide ring may include: an inner top provided at a height equal to or lower than the top of the base; and an outer top provided at a height higher than the top of the base; the main body may include: an inner bottom supported by the inner top; and an outer bottom supported by the outer top.

[0029] According to one embodiment, the guide ring may also include an upward inclined portion, which is inclined upward along a direction from the upper inner side toward the upper outer side; the main body may also include a downward inclined portion, which is inclined downward along a direction from the lower outer side toward the lower inner side, and is provided in a shape corresponding to the upward inclined portion.

[0030] According to one embodiment, the protrusion may contact an upper surface of a substrate supported by the susceptor during a process.

[0031] In addition, the present invention provides a method for processing a substrate. The method for processing a substrate using the apparatus for processing a substrate may include: positioning the edge clamp at the support end of the clamping buffer; moving the substrate before process processing into the clamping buffer; and transferring the edge clamp and the substrate from the clamping buffer to the process chamber.

[0032] According to one embodiment, the method may include: a step of supporting the substrate on the susceptor; and a step of processing the substrate using plasma in the process chamber; and during the step of processing the substrate, the plurality of protrusions of the edge clamp are located on the upper edge of the substrate to suppress bending of the substrate.

[0033] Beneficial Effects

[0034] According to one embodiment of the present invention, a substrate can be processed efficiently.

[0035] In addition, according to one embodiment of the present invention, it is possible to minimize the situation where a process is performed in a state where the substrate is bent.

[0036] In addition, according to one embodiment of the present invention, it is possible to minimize the situation where the substrate processing efficiency is reduced in the edge area of ​​the substrate.

[0037] The effects of the present invention are not limited to the above effects, and should be understood to include all effects that can be inferred from the inventive configuration described in the description of the present invention or the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a diagram showing how a substrate is warped and a gap is generated between the substrate and the susceptor.

[0039] Figure 2 This figure shows how a substrate edge region is clamped using a window clamp in order to suppress substrate warping.

[0040] Figure 3 FIG. 1 is a top view showing a substrate processing apparatus according to an embodiment of the present invention.

[0041] Figure 4 4 is a top view of a transport robot according to an embodiment of the present invention.

[0042] Figure 5 FIG. 1 is a top view schematically showing a buffer unit according to an embodiment of the present invention.

[0043] Figure 6 FIG. 1 is a side view schematically showing the interior of a housing of a buffer unit according to an embodiment of the present invention.

[0044] Figure 7 It is a side view illustrating the operation state of the clamp buffer according to one embodiment of the present invention.

[0045] Figure 8 This is a diagram showing a state where a substrate is carried from a device front end module into a clamp buffer.

[0046] Fig. 9 This figure shows the state where the push rod corrects the position of the substrate and the transfer robot enters.

[0047] Fig.10 It is a diagram showing a state where a substrate is picked up by a transfer robot and an edge clamp is located on the substrate.

[0048] Fig.11 is a diagram showing a process chamber with a substrate mounted on a susceptor.

[0049] Fig.12 Yes Display Fig.11 A perspective view of the edge clamp.

[0050] Fig.13 Is the enlarged display Fig.11 Figure 1.

[0051] Fig.14 This is a diagram showing how a substrate bends during processing of the substrate.

[0052] Fig.15 It is a sequence diagram of a substrate processing method according to an embodiment of the present invention.

[0053] Fig.16 FIG. 1 is a diagram showing an edge clamp according to another embodiment of the present invention.

[0054] The reference numerals are described as follows:

[0055] 1: Substrate processing equipment

[0056] 4: Carrying frame

[0057] 6: Support part

[0058] 10: Loading port

[0059] 11: First Direction

[0060] 12: Second direction

[0061] 20: Device front end module

[0062] 21: Transfer frame

[0063] 25: Indexing Robot

[0064] 27: Transfer track

[0065] 30: Processing Department

[0066] 40: Buffer unit

[0067] 41: Clamping buffer

[0068] 41a: First buffer area

[0069] 42: On buffer

[0070] 42a: Second buffer area

[0071] 50: Transfer chamber

[0072] 53: Transport robot

[0073] 53a: Both hands

[0074] 53b: Both hands

[0075] 54: Drive

[0076] 60: Process chamber

[0077] 70: Controller

[0078] 110: Shell

[0079] 110a: Shell

[0080] 110b: Shell

[0081] 112a: Passage

[0082] 112b: Passage

[0083] 114a: Passage

[0084] 114b: Passage

[0085] 116a: Door

[0086] 116b: Door

[0087] 117a: Door

[0088] 117b: Door

[0089] 130: Substrate support member

[0090] 140: Putter

[0091] 150: Edge clamp support member

[0092] 151: Support end

[0093] 152: Drive unit

[0094] 160: Edge clamp

[0095] 161: Main body

[0096] 162: Bump

[0097] 164: Inside and below

[0098] 166: Outer side and below

[0099] 168: Downward slope

[0100] 181: Gas supply pipeline

[0101] 2100: Chamber Chamber

[0102] 2110: Processing chamber

[0103] 2120: Diffusion chamber

[0104] 2121: Diffusion Space

[0105] 2200: Base

[0106] 2220: Heating element

[0107] 2230: Guide ring

[0108] 2232: Inside upper side

[0109] 2234: outside top

[0110] 2236: Upward tilt

[0111] 2300: Bezel

[0112] 2310: Distribution hole

[0113] 2400: Plasma Excitation Department

[0114] 2410: Oscillator

[0115] 2420: Waveguide

[0116] 2430: Dielectric tube

[0117] 2440: Process Gas Supply Department

[0118] W: substrate

[0119] S10-S80: Steps DETAILED DESCRIPTION

[0120] The embodiments of the present invention are described in more detail below with reference to the accompanying drawings. The embodiments of the present invention can be deformed into various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. The present embodiments are provided to more fully explain the present invention to those skilled in the art. Therefore, the shapes of the components in the accompanying drawings are exaggerated to emphasize a clearer description.

[0121] Figure 3 FIG. 1 is a top view showing a substrate processing apparatus according to an embodiment of the present invention.

[0122] If you refer to Figure 3 The substrate processing apparatus 1 includes an equipment front end module (EFEM) 20 and a process processing unit 30. The equipment front end module 20 and the process processing unit 30 are arranged in one direction. Hereinafter, the direction in which the equipment front end module 20 and the process processing unit 30 are arranged is referred to as a first direction 11, and the direction perpendicular to the first direction 11 when viewed from above is referred to as a second direction 12.

[0123] The device front-end module 20 has a loading port 10 and a transfer frame 21. The loading port 10 is arranged in front of the device front-end module 20 along the first direction 11. The loading port 10 has a plurality of support parts 6. Each support part 6 is arranged in a row along the second direction 12, and a carrier 4 (such as a carrier box, FOUP, etc.) is placed to store substrates W to be provided to the process and substrates W after the process is completed. The substrates W to be provided to the process and substrates W after the process are stored in the carrier 4. The transfer frame 21 is arranged between the loading port 10 and the process processing part 30. The transfer frame 21 includes an indexing robot 25 arranged therein and transferring the substrates W between the loading port 10 and the process processing part 30. The indexing robot 25 moves along a transfer track 27 provided in the second direction 12 to transfer the substrates W between the carrier 4 and the process processing part 30.

[0124] The process processing section 30 includes a buffer unit 40 , a transfer chamber 50 , a plurality of process chambers 60 , and a controller 70 .

[0125] The buffer unit 40 is disposed adjacent to the transfer frame 21. As an example, the buffer unit 40 may be disposed between the transfer chamber 50 and the device front end module 20. The buffer unit 40 provides a space for waiting the substrate W provided to the process before being transferred to the process chamber 60 or the substrate W after the process is completed before being transferred to the device front end module 20.

[0126] The transfer chamber 50 is arranged adjacent to the buffer unit 40. The transfer chamber 50 has a polygonal main body when viewed from above. On the outside of the main body, the buffer unit 40 and a plurality of process chambers 60 are arranged along the outer periphery of the main body. Passages (not shown in the figure) for the substrate W to enter and exit are formed on each side wall of the main body, and the passages connect the transfer chamber 50 and the buffer unit 40 or the process chamber 60. A door (not shown in the figure) is provided in each passage to open and close the passage to seal the interior. In the internal space of the transfer chamber 50, a transport robot 53 for transferring substrates W between the buffer unit 40 and the process chamber 60 is arranged. The transport robot 53 transfers the unprocessed substrate W waiting in the buffer unit 40 to the process chamber 60, or transfers the substrate W after the process processing to the buffer unit 40. In addition, in order to provide substrates W to a plurality of process chambers 60 sequentially or simultaneously, the substrates W are transferred between the process chambers 60.

[0127] The process chamber 60 may be arranged along the periphery of the transfer chamber 50. A plurality of process chambers 60 may be provided. In each process chamber 60, a process treatment is performed on the substrate W. The process chamber 60 receives the transferred substrate W from the transfer robot 53, performs the process treatment, and provides the substrate W after the process treatment to the transfer robot 53. The process treatments performed in each process chamber 60 may be different from each other. The process performed in the process chamber 60 may be a process in the process of producing a semiconductor device or a display panel using the substrate W.

[0128] The controller 70 may control various components of the substrate processing apparatus 1 including the buffer unit 40 .

[0129] The substrate W processed by the substrate processing apparatus 1 is a general concept of all substrates used for manufacturing semiconductor components, flat panel displays (FPDs), and other objects having circuit patterns formed on thin films. Examples of such substrates W include silicon chips, glass substrates, and organic substrates.

[0130] Figure 4 4 is a top view of a transport robot according to an embodiment of the present invention.

[0131] If you refer to Figure 4 The handling robot 53 has two hands 53a and 53b. The two hands 53a and 53b share a driver 54 and are driven simultaneously. The handling robot 53 with two hands is only one embodiment, and thus the scope of rights is not limited to the handling robot being a two-handed type driven simultaneously by one driver.

[0132] Figure 5 FIG. 1 is a top view schematically showing a buffer unit according to an embodiment of the present invention. Figure 5 The buffer unit 40 includes housings 110 a and 110 b and a substrate supporting member 130 .

[0133] The housings 110a and 110b are frames for protecting the buffer unit 40. The housings 110a and 110b have internal spaces for accommodating substrates W. In the housings 110a and 110b, passages 112a and 114a are formed adjacent to and parallel to the transfer frame 21, through which the substrates W enter and exit between the internal spaces of the housings 110a and 110b and the transfer frame 21, and passages 112b and 114b are formed through which the substrates W enter and exit between the internal spaces of the housings 110a and 110b and the transfer chamber 50. Doors 116a, 116b, 117a, and 117b are installed on the side walls where the passages 112a, 112b, 114a, and 114b are formed, respectively, for opening and closing the passages to seal the internal spaces of the housings 110a and 110b from the outside. A gas supply line 181 is installed on one side of the housings 110a and 110b to supply the purge gas to the inner space of the housings 110a and 110b. The first housing 110a and the second housing 110b are arranged in parallel along the first direction 11. A clamping buffer 41 or a conducting buffer 42 may be selectively provided on each housing 110a and 110b.

[0134] Figure 6 FIG. 1 is a side view schematically illustrating the interior of a housing of a buffer unit according to an embodiment of the present invention. Specifically, Figure 6 It is a side view schematically showing the inside of one of the first housing 110a and the second housing 110b. In the following, the first housing 110a and the second housing 110a are expressed as a housing 110. The housing 110 is configured by stacking the clamp buffer 41 and the conduction buffer 42 in an up-and-down manner.

[0135] The clamping buffer 41 forms a first buffer region 41 a including a substrate support member 130 , a push rod 140 , and an edge clamp support member 150 . The conducting buffer 42 forms a second buffer region 42 a including a substrate support member 130 , a push rod 140 .

[0136] The substrate supporting member 130 supports the carried-in substrate W using the buffer regions 41a and 42a. The substrate supporting member 130 supports the bottom surface of the substrate W. The substrate supporting member 130 is located at the lower portion of the buffer regions 41a and 42a. The substrate supporting member 130 is provided in a shape that does not interfere with the entry of the index robot 25 or the transfer robot 53 when the index robot 25 or the transfer robot 53 carries in and carries out the substrate W. As an example, the substrate supporting member 130 is provided in a rod shape to support the bottom surface of the substrate W.

[0137] The push rod 140 is located outside the substrate W supported by the substrate support member 130. The push rod 140 arranges the substrate W that has been carried in. The push rod 140 is provided in such a manner that a portion facing the side surface of the substrate W can move in a direction toward the substrate W. A plurality of push rods 140 may be provided facing each other based on the substrate W. As an example, two push rods 140 may be provided facing each other based on the substrate W, or four push rods 140 may be provided in directions intersecting each other.

[0138] Figure 7 FIG. 2 is a side view illustrating the operation of a clamping buffer according to an embodiment of the present invention. Figure 7 , the clamping buffer 41 includes a substrate supporting member 130 and an edge clamp supporting member 150 .

[0139] The edge clamp supporting member 150 supports the edge clamp 160. The edge clamp supporting member 150 is located outside the edge of the substrate W supported by the substrate supporting member 130.

[0140] The edge clamp supporting member 150 includes a supporting end 151 located at a second position h2 higher than a first position h1 which is an upper height of the substrate supporting member 130. The supporting end 151 supports the edge clamp 160. The supporting end 151 is connected to a driving portion 152 which drives the supporting end 151 so as to be movable between the second position h2 and a third position h3 which is an upper portion of the second position h2.

[0141] Figure 8 This is a diagram showing the state where the substrate is moved from the device front module to the clamp buffer. Figure 8 The edge clamp 160 is located at the edge clamp support member 150 before the substrate W is carried from the device front end module 20 to the buffer unit 40. The edge clamp 160 is circular or quadrilateral ring-shaped corresponding to the outer periphery of the substrate W and is provided by a ceramic material.

[0142] When the edge clamp 160 is ready, the index robot 25 moves the substrate W to be processed into the clamping buffer 41. The controller 70 controls the index robot 25 to move the substrate W to a height h4 that is a set distance above the height supported by the substrate support member 130. Then, after the substrate W is aligned with the position supported by the substrate support member 130, the index robot 25 moves downward so that the substrate W is located at the substrate support member 130.

[0143] Fig. 9 This is a diagram showing the push rod correcting the position of the substrate and the state of the transfer robot entering. Fig. 9 After the substrate W is loaded from the device front end module 20, the position of the substrate W can be corrected by means of the push rod 140. Figure 8 ) is set so that the substrate W is located at the set position. However, in the process of positioning the substrate W at the substrate support member 130, the position of the substrate W may differ from the set position. The controller 70 moves the push rod 140 toward the substrate W by a set distance to push the substrate W to the correct position. Then, the push rod 140 is away from the substrate W to prevent interference with other components. After the substrate W is positioned, the transport robot 53 enters in a manner to be located at the lower side of the substrate.

[0144] Fig.10 is a diagram showing a state where a substrate is picked up by a transport robot and an edge clamp is located on the substrate. Fig.10 The transport robot 53 moves to the second position h2 (refer to Figure 7 ) and further rises to a setting height above the third height h3 to pick up the substrate W (the setting height is lower than the third height h3). When the transport robot 53 rises to pick up the substrate W, the edge clamp 160 is located on the substrate W. After completing the picking up of the substrate W, the transport robot 53 retreats from the clamp buffer 41 toward the transfer chamber 50.

[0145] Fig.11 is a diagram showing a process chamber in which a substrate is placed on a susceptor. Fig.11 The process chamber 60 includes a chamber 2100 , a base 2200 , a baffle 2300 and a plasma excitation part 2400 .

[0146] The chamber 2100 has an inner space for performing a process. The chamber 2100 may include: a processing chamber 2110 having an inner space for processing a substrate W; and a diffusion chamber 2120 for diffusing plasma generated by the plasma excitation unit 2400. The diffusion chamber 2120 may have a diffusion space 2121 for diffusing the plasma.

[0147] The base 2200 can support the substrate W in the internal space of the chamber 2100. The base 2200 can be provided in the internal space of the chamber 2100. The base 2200 can be provided in an aluminum material. Inside the base 2200, a cooling flow path (not shown in the figure) for circulating a cooling fluid can be formed. The cooling fluid circulates along the cooling flow path to cool the base 2200. In the base 2200, in order to adjust the degree of plasma-based substrate W processing, power can be applied from a bias power supply (not shown in the figure). The power applied by the bias power supply can be a radio frequency (RF) power supply. The base 2200 forms a sheath with the help of the power applied by the bias power supply, and a high-density plasma is formed in this area, which can improve the process capability.

[0148] Inside the susceptor 2200, a heating member 2220 may be provided. According to one example, the heating member 2220 may be provided as a heating wire. The heating member 2220 heats the substrate W to a preset temperature. The susceptor 2200 may include lift pins (not shown in the figure), and when the substrate W is moved into the process chamber 60, the lift pins of the susceptor 2200 may be in a raised state. Around the susceptor 2200, a guide ring 2230 surrounding the susceptor 2200 is provided. The guide ring 2230 may be provided with a ceramic material.

[0149] The baffle 2300 is electrically connected to the upper wall of the processing chamber 2110. The baffle 2300 may be in the shape of a circular plate and arranged parallel to the upper surface of the base 2200. The baffle 2300 may be provided by an aluminum material subjected to surface oxidation treatment. Distribution holes 2310 are formed on the baffle 2300. The distribution holes 2310 may be formed at predetermined intervals on concentric circles in order to uniformly supply free radicals. The plasma diffused in the diffusion space 2121 flows into the distribution holes 2310. At this time, charged particles such as electrons or ions are captured by the baffle 2300, and uncharged neutral particles such as oxygen free radicals are supplied to the substrate W through the distribution holes 2310. In addition, the baffle 2300 may be grounded to form a path for electrons or ions to move.

[0150] The plasma excitation part 2400 generates plasma and supplies it to the chamber 2100. The plasma excitation part 2400 can be provided at the upper part of the chamber 2100. The plasma excitation part 2400 includes an oscillator 2410, a waveguide 2420, a dielectric tube 2430, and a process gas supply part 2440. The oscillator 2410 generates electromagnetic waves. The waveguide 2420 connects the oscillator 2410 and the dielectric tube 2430, and provides a passage for the electromagnetic waves generated by the oscillator 2410 to be transmitted to the inside of the dielectric tube 2430. The process gas supply part 2440 supplies process gas to the upper part of the chamber 2100. The process gas is selected according to the process progress. The process gas supplied to the inside of the dielectric tube 2430 is excited into a plasma state by means of electromagnetic waves. The plasma flows into the diffusion space 2121 through the dielectric tube 2430. The above-mentioned plasma excitation part 2400 is based on the case of utilizing electromagnetic waves as an example. However, as another embodiment, the plasma excitation part 2400 can also be provided by an inductively coupled plasma excitation part or a capacitively coupled plasma excitation part.

[0151] According to an embodiment of the present invention, the substrate W carried into the process chamber 60 can be provided in a state where the upper edge of the substrate W is covered by the edge clamp 160 when viewed from above. The edge clamp 160 can suppress the warpage of the substrate W supported by the susceptor 2200. In addition, the edge clamp 160 can be supported by the guide ring 2230. For example, the body 161 of the edge clamp 160 described later can be supported by the guide ring 2230.

[0152] Fig.12 Yes Display Fig.11 A stereogram of the edge fixture, Fig.13 Is magnification Fig.11 The figure shown in part A of Fig.12 and Fig.13 The edge clamp 160 may include a main body 161 and a protrusion 162 .

[0153] The body 161 may have a ring shape. The body 161 may have a circular or quadrilateral ring shape. The shape of the body 161 may have a shape corresponding to the shape of the substrate W to be processed. For example, when the shape of the substrate W is circular, the edge clamp 160 including the body 161 having a circular ring shape may be used. Different from this, when the shape of the substrate W is quadrilateral, the edge clamp 160 including the body 161 having a quadrilateral ring shape may be used.

[0154] In addition, the body 161 may be staggered from the center of the body 161 viewed from above to the outside of the body 161 so that the edge region of the substrate W supported by the base 2200 can be inserted. For example, the body 161 may be provided staggered downward from the center of the body 161 viewed from above to the outside of the body 161 so that the edge region of the substrate W supported by the base 2200 can be inserted. Even if the edge clamp 160 is slightly not placed at the accurate position of the guide ring 2230, the downward staggered portion of the body 161 slides on the edge of the substrate W, so that the edge clamp 160 can be located at the accurate position.

[0155] A plurality of protrusions 162 may be provided. The protrusions 162 may extend from the main body 161 toward the inner side thereof when viewed from above. The protrusions 162 may extend from the main body 161 toward the center of the main body 161 when viewed from above. In addition, the protrusions 162 may be provided spaced apart from each other along the circumferential direction of the main body 161. The protrusions 162 may be provided spaced apart from each other at equal intervals along the circumferential direction of the main body 161.

[0156] After the edge clamp 160 is supported by the guide ring 2230, when viewed from above, the protrusion 162 of the edge clamp 160 may be arranged to overlap with the upper edge of the substrate W supported by the base 2200. When viewed from above, the upper edge of the substrate W that does not overlap with the protrusion 162 may be exposed to the plasma generated by the plasma excitation unit 2400. That is, according to one embodiment of the present invention, the plurality of protrusions 162 are provided spaced apart from each other along the circumferential direction of the body 161, thereby minimizing the problem of poor surface treatment caused by the inability to remove the photoresist due to the upper edge of the substrate W not being exposed to the plasma.

[0157] In addition, the lower surface of the protrusion 162 may be provided to be separated from the upper surface of the substrate W. For example, after the edge clamp 160 is supported by the guide ring 2230, the lower surface of the protrusion 162 may be provided to be separated from the upper surface of the substrate W supported by the susceptor 2200. In addition, when the substrate W supported by the susceptor 2200 is in a flat state, the lower surface of the protrusion 162 may be provided to be separated from the upper surface of the substrate W. Therefore, the edge region of the substrate W may be exposed to the plasma generated by the plasma excitation unit 2400.

[0158] The upper surface of the guide ring 2230 may include an inner upper surface 2232 and an outer upper surface 2234. The inner upper surface 2232 may be provided at the same height as the upper surface of the base 2200. Different from this, the inner upper surface 2232 may be provided at a height lower than the upper surface of the base 2200. The outer upper surface 2234 may be provided at a height higher than the upper surface of the base 2200. In addition, the upper surface of the guide ring 2230 may include an upwardly inclined portion 2236 that is inclined upwardly in a direction from the inner upper surface 2232 toward the outer upper surface 2234.

[0159] Considering the edge clamp 160 again, the body 161 of the edge clamp 160 may include an inner lower surface 164 supported by the inner upper surface 2232 of the guide ring 2230. In addition, the body 161 of the edge clamp 160 may include an outer lower surface 166 supported by the outer upper surface 2234 of the guide ring 2230. The inner lower surface 164 may be provided at a height lower than the lower surface of the protrusion 162. The outer lower surface 166 may be provided at a height lower than the lower surface of the protrusion 162. The outer lower surface 166 may be provided at a height higher than the inner lower surface 164. In addition, the body 161 of the edge clamp 160 may further include a downwardly inclined portion 168 that is inclined downwardly in a direction from the outer lower surface 166 toward the inner lower surface 164. The downwardly inclined portion 168 may have a shape corresponding to the upwardly inclined portion 2236. After the edge clamp 160 is supported by the guide ring 2230 , the inner lower surface 164 of the edge clamp 160 may be connected to the inner upper surface 2232 of the guide ring 2230 . After the edge clamp 160 is supported by the guide ring 2230 , the outer lower surface 166 of the edge clamp 160 may be connected to the outer upper surface 2234 of the guide ring 2230 .

[0160] Generally speaking, during the process of processing the substrate W, especially in the process of supplying plasma to the substrate W to process the substrate, the substrate W will bend. Therefore, in order to suppress the bending phenomenon of the substrate W, a method of clamping the substrate W with a window clamp can be considered for the edge area of ​​the substrate W. However, this method cannot properly perform plasma processing in the edge area of ​​the substrate W. Specifically, if the edge area of ​​the substrate W is clamped with a window clamp, the upper edge of the substrate W is not exposed to the plasma supplied to the substrate W. Therefore, in the edge area of ​​the substrate W, the photoresist coated on the substrate W cannot be properly removed, which leads to poor surface treatment (Poor Coating).

[0161] However, according to one embodiment of the present invention, the edge clamp 160 has a plurality of protrusions 162. Therefore, when viewed from above, a portion of the edge region of the substrate W overlaps with the plurality of protrusions 162. That is, when viewed from above, the region in the edge region of the substrate W that does not overlap with the protrusions 162 is exposed to plasma. Therefore, in the edge region of the substrate W, the occurrence of poor surface treatment (Poor Coating) can be minimized. In addition, according to one embodiment of the present invention, when the substrate W supported by the base 2200 is in a flat state, the bottom of the protrusion 162 is provided separated from the top of the substrate W. Therefore, plasma flows into the space between the bottom of the protrusion 162 and the edge top of the substrate W. That is, the edge top of the substrate W is exposed to plasma, and the occurrence of poor surface treatment (Poor Coating) can be minimized in the edge region of the substrate W. In addition, as Fig.14 As shown, even if the substrate W is bent, even if the top of the substrate W is in contact with the bottom of the protrusion 162, the occurrence of poor surface treatment (Poor Coating) can be minimized compared to the case where a normal window clamp is used. Specifically, a normal window clamp (WindowClamp) is in surface contact with the top edge of the substrate W. However, the protrusion 162 of the edge clamp 160 of an embodiment of the present invention is provided separated from the top of the substrate W. In addition, even if the substrate W is bent, the top of the substrate W is in line contact with the bottom of the protrusion 162. That is, compared to the case where a normal window clamp is used, the area in which the substrate W contacts the edge clamp 160 is reduced. Therefore, the occurrence of poor surface treatment (Poor Coating) can be minimized in the edge area of ​​the substrate W.

[0162] Fig.15 FIG. 1 is a sequence diagram of a substrate processing method according to an embodiment of the present invention. Fig.15 , the edge clamp 160 is located at the supporting end 151 of the clamping buffer 41 (step S10).

[0163] The index robot 25 transfers the substrate W before processing to each first buffer area 41a of the clamp buffer 41 (step S20). One embodiment provides a state where the substrate W is moved from the clamp buffer 41 into one first buffer area 41a, while no substrate W is moved into the other first buffer area 41a.

[0164] After the substrates W are arranged by the push rod 140 and the support end 151 of the clamp buffer without the substrates W is raised and lowered, both hands 53a and 53b of the transport robot 53 simultaneously enter the clamp buffer unit (step S30).

[0165] When the hands 53a and 53b reach the position where the clamping buffer unit is set, the hands 53a and 53b rise above the supporting end 151 and pick up the substrate W (step S40). When the substrate W is picked up, the edge clamp 160 is also picked up.

[0166] After completing the picking up of the substrate W and the edge clamp 160 , the transfer robot 53 retreats toward the transfer chamber 50 and carries the substrate W out of the clamp buffer unit (step S50 ).

[0167] The substrate W and the edge fixture 160 transferred to the transfer chamber 50 are transferred to the process chamber 60 (step S60).

[0168] The substrate W transferred to the process chamber 60 is placed on the susceptor 2200 supporting the substrate W in the chamber 2100 (step S70). That is, the substrate W is supported by the susceptor 2200. At this time, the edge fixture 160 transferred to the process chamber 60 together with the substrate W is supported by the guide ring 2230 surrounding the susceptor 2200.

[0169] After the substrate W is placed on the base 2200, the plasma excitation unit 2400 generates plasma. The plasma generated by the plasma excitation unit 2400 diffuses through the diffusion space 2121. The plasma diffused in the diffusion space 2121 is transferred to the substrate W through the distribution hole 2310 of the baffle 2300. The plasma transferred to the substrate W processes the substrate W (step S80). The plasma transferred to the substrate W can remove the photoresist coated on the substrate W. In addition, during the period when the plasma is transferred to the substrate W and the substrate W is processed, the edge clamp 160 is located at the upper edge of the substrate W, which can suppress the bending phenomenon of the substrate W. As an example, the plurality of protrusions 162 of the edge clamp 160 are located at the upper edge of the substrate W, which can suppress the bending of the substrate W.

[0170] In the above example, the case where the lower surface of the protrusion 162 is provided apart from the upper surface of the substrate W is taken as an example for description, but the present invention is not limited thereto. Fig.16As shown, the bottom of the protrusion 162 may be provided to contact the top of the substrate W supported by the susceptor 2200. For example, the protrusion 162 may also be provided to contact the top of the substrate W supported by the susceptor 2200 during the process.

[0171] The above detailed description is an example of the present invention. In addition, the content shows and describes the preferred embodiment of the present invention, and the present invention can be used in various different combinations, changes and environments. That is, it can be changed or revised within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed content, and / or the technology or knowledge of the industry. The embodiments illustrate the optimal state required to embody the technical idea of ​​the present invention, and various changes required by the specific application field and use of the present invention can also be made. Therefore, the above invention content is not intended to limit the present invention to the disclosed embodiment. In addition, it should be interpreted that the attached claims also include other embodiments.

Claims

1. A substrate processing device, in, include: a chamber having an interior space; a base supporting a substrate in the interior space; an edge clamp which suppresses bending of the substrate supported by the base and is arranged apart from the substrate; and a plasma excitation section that generates plasma and supplies it to the internal space; The edge fixture comprises: Ring-shaped body; a plurality of protrusions extending from the main body toward the inner side thereof, being spaced apart from each other along the circumference of the main body, and overlapping with the upper edge of the substrate supported by the base when viewed from above; The plurality of protrusions are spaced apart from the upper surface of the substrate supported by the base so that the upper edge of the substrate is exposed to the plasma. If the substrate is bent, the protrusions are in line contact with the upper surface of the substrate.

2. The substrate processing device according to claim 1, in, The protrusion extends toward the center of the main body.

3. The substrate processing apparatus according to claim 1, in, When the substrate supported by the susceptor is in a flat state, the lower surface of the protrusion is spaced apart from the upper surface of the substrate supported by the susceptor.

4. The substrate processing device according to any one of claims 1 to 3, in, The main body is staggered downward from the center of the main body viewed from above toward the outside of the main body so that an edge region of the substrate supported by the base is inserted.

5. The substrate processing apparatus according to any one of claims 1 to 3, in, The substrate processing apparatus further includes a guide ring surrounding the susceptor. The main body is supported by the guide ring.

6. The substrate processing apparatus according to claim 5, in, The guide ring includes: an inner upper surface provided at a height equal to or lower than the upper surface of the base; and an outer upper surface provided at a height higher than the upper surface of the base, The subject includes: an inner lower side supported by the inner upper side; An outer lower surface is supported by the outer upper surface.

7. The substrate processing apparatus according to claim 6, in, The guide ring further includes an upwardly inclined portion, the upwardly inclined portion being inclined upwardly in a direction from the inner upper surface toward the outer upper surface, The main body further includes a downwardly inclined portion which is inclined downwardly in a direction from the outer lower surface toward the inner lower surface and is provided in a shape corresponding to the upwardly inclined portion.

8. The substrate processing apparatus according to claim 1, in, The protrusion contacts the upper surface of the substrate supported by the base during the manufacturing process.

9. A substrate processing device, in, include: Device front end module; and a processing module for processing the substrate, The device front-end module comprises: a loading port for placing a container containing a substrate; and a transfer frame providing an indexing robot for transporting substrates between the load port and the process module; The processing module comprises: a clamping buffer, the clamping buffer being arranged adjacent to the front end module of the device; a process chamber, wherein the process chamber performs a processing process on the substrate; a transfer chamber having a transfer robot for transferring a substrate between the process chamber and the clamping buffer; The clamping buffer comprises: a substrate supporting member that supports a substrate; and an edge clamp support member having a support end for supporting the edge clamp; The process chamber comprises: a chamber having an interior space; a base, the base supporting the substrate in the inner space; The edge clamp suppresses bending of the substrate supported by the base and is arranged to be spaced apart from the substrate; and a plasma excitation section that generates plasma and supplies it to the internal space; The edge fixture comprises: Ring-shaped body; a plurality of protrusions extending from the main body toward the inner side thereof, being spaced apart from each other along the circumference of the main body, and overlapping with the upper edge of the substrate supported by the base when viewed from above; The plurality of protrusions are spaced apart from the upper surface of the substrate supported by the base so that the upper edge of the substrate is exposed to the plasma. If the substrate is bent, the protrusions are in line contact with the upper surface of the substrate.

10. The substrate processing apparatus according to claim 9, in, The protrusion extends toward the center of the main body.

11. The substrate processing apparatus according to claim 9, in, When the substrate supported by the susceptor is in a flat state, the lower surface of the protrusion is spaced apart from the upper surface of the substrate supported by the susceptor.

12. The substrate processing apparatus according to any one of claims 9 to 11, in, The main body is provided in a staggered manner downward from the center of the main body viewed from above toward the outside of the main body so that an edge region of a substrate supported by the base is inserted.

13. The substrate processing apparatus according to any one of claims 9 to 11, in, The substrate processing apparatus further includes a guide ring surrounding the susceptor. The main body is supported by the guide ring.

14. The substrate processing apparatus according to claim 13, in, The guide ring includes: an inner upper surface provided at a height equal to or lower than the upper surface of the base; and an outer upper surface provided at a height higher than the upper surface of the base, The subject includes: an inner lower side supported by the inner upper side; An outer lower surface is supported by the outer upper surface.

15. The substrate processing apparatus according to claim 14, in, The guide ring further includes an upwardly inclined portion, the upwardly inclined portion being inclined upwardly in a direction from the inner upper surface toward the outer upper surface, The main body further includes a downwardly inclined portion which is inclined downwardly in a direction from the outer lower surface toward the inner lower surface and is provided in a shape corresponding to the upwardly inclined portion.

16. The substrate processing apparatus according to claim 9, in, The protrusion contacts the upper surface of the substrate supported by the base during the manufacturing process.

17. A substrate processing method, wherein the method uses the substrate processing apparatus according to any one of claims 9 to 11 to process a substrate, The following steps are involved: the step of positioning the edge clamp at the support end of the clamping buffer; The step of moving the substrate before process treatment into the clamping buffer; and The step of transferring the edge fixture and the substrate from the clamping buffer to the process chamber.

18. The substrate processing method according to claim 17, further comprising: The following steps are involved: a step of supporting the substrate on the base; and The step of processing the substrate using plasma in the process chamber; and During the step of processing the substrate, the plurality of protrusions of the edge clamp are located on an upper portion of an edge of the substrate, suppressing bending of the substrate.

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