A developer for slowing down corrosion of AlN substrate

Abstract

The invention discloses a developer for slowing down the corrosion of AlN substrate and a preparation method thereof. The developer comprises the following raw materials: quaternary ammonium hydroxide, a surfactant, a defoamer, an anticorrosive agent and water. In the process of preparing photoresist, the developer for slowing down the corrosion of AlN substrate of the invention has less corrosion to the AlN film in the bottom coating of the photoresist or in the area in contact with the photoresist, reduces the foam of the developer, enhances the development effect, and improves the yield rate of the product.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor processing, and in particular to a developer for slowing down corrosion of an AlN substrate and a preparation method thereof. Background Art

[0002] Photoresist is a photosensitive material. Its properties change after being exposed to light, so that after the photolithography process is completed, the purpose of transferring the pattern is achieved. Photoresist is divided into positive and negative. Positive resist means that the exposed area melts after development, and the non-exposed area remains; negative resist means that the exposed area remains, and the non-exposed area melts after development.

[0003] If there is an AlN layer in the photoresist basecoat or in the area in contact with the photoresist, there will be corrosion problems due to the strong alkalinity of the developer. This will affect the flatness, smoothness, and conductivity of the substrate surface, resulting in an increase in chip defect rate. Most of the developers in the prior art have the problems of fast corrosion of the AlN substrate, uneven development, and more development foam, resulting in a low product yield. Summary of the invention

[0004] The embodiment of the present invention provides a developer for slowing down the corrosion of an AlN substrate and a preparation method thereof, aiming to solve the problem in the prior art that the developer corrodes the AlN substrate quickly, develops unevenly, and has more foam, resulting in a low product yield.

[0005] The embodiment of the present invention provides a developer for slowing down the corrosion of an AlN substrate, comprising the following raw materials: 1-5wt% quaternary ammonium hydroxide; 0.01-2wt% surfactant; 0.1-5wt% defoamer; 0.5-3% cosolvent; 0.05-1wt% anticorrosive agent, and the balance is water.

[0006] Preferably, in the developer for slowing down corrosion of the AlN substrate, the quaternary ammonium hydroxide is one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra-n-propylammonium hydroxide, tetraisopropylammonium hydroxide, tetra-n-butylammonium hydroxide, tetraisobutylammonium hydroxide, tetra-tert-butylammonium hydroxide, methyltriethylammonium hydroxide, methyltripropylammonium hydroxide, dimethyldiethylammonium hydroxide, dimethyldipropylammonium hydroxide, dimethyldi-tert-butylammonium hydroxide, trimethylethylammonium hydroxide, trimethylpropylammonium hydroxide, and trimethyltert-butylammonium hydroxide.

[0007] Preferably, in the developer for slowing down the corrosion of the AlN substrate, the surfactant is one or more of sorbitan trioleate, sorbitan tristearate, ethylene glycol fatty acid ester, propylene glycol fatty acid ester, propylene glycol monostearate, sorbitan sesquioleate, monostearic acid glyceryl ester, propylene glycol monolaurate, diethylene glycol monooleate, diethylene glycol monostearate, diethylene glycol fatty acid ester, diethylene glycol monolaurate, sorbitan monopalmitate, tetraethylene glycol monostearate, tetraethylene glycol monooleate, tetraethylene glycol monolaurate, and hexaethylene glycol monostearate.

[0008] More preferably, in the developer for slowing down corrosion of the AlN substrate, the surfactant is one or more of sorbitan trioleate, ethylene glycol fatty acid ester, sorbitan sesquioleate, and sorbitan monopalmitate.

[0009] Preferably, in the developer for slowing down the corrosion of the AlN substrate, the defoaming agent is one or more of emulsified silicone oil, high carbon alcohol fatty acid ester, polyoxyethylene pentaerythritol ether, polyoxypropylene pentaerythritol ether, polyoxyethylene propanolamine ether, polyoxypropylene propanolamine ether, polydimethylsiloxane, and polyoxypropylene glycerol ether.

[0010] More preferably, in the developer for slowing down corrosion of the AlN substrate, the defoaming agent is one or more of emulsified silicone oil, polyoxyethylene pentaerythritol ether, polyoxypropylene propanolamine ether, and polyoxypropylene glycerol ether.

[0011] Preferably, in the developer for slowing down corrosion of the AlN substrate, the co-solvent is one or more of ethylene glycol, diethylene glycol, tetraethylene glycol, hexaethylene glycol, propylene glycol, and glycerol.

[0012] More preferably, in the developer for slowing down the corrosion of the AlN substrate, the co-solvent is one or more of ethylene glycol, diethylene glycol, tetraethylene glycol, and glycerol.

[0013] Preferably, in the developer for slowing down the corrosion of the AlN substrate, the anti-corrosion agent is one or more of imidazole, pyrazole, triazole, tetrazole, oxazole, 1,2,3-oxadiazole and thiazole.

[0014] More preferably, in the developer for slowing down the corrosion of the AlN substrate, the anti-corrosion agent is one or more of 1,2,3-oxadiazole, tetrazole, pyrazole, and 1,2,3-oxadiazole.

[0015] The embodiment of the present invention provides a developer for slowing down the corrosion of AlN substrate and a preparation method thereof, wherein the developer comprises the following raw materials: 1-5wt% quaternary ammonium hydroxide; 0.01-2wt% surfactant; 0.1-5wt% defoamer; 0.5-3% cosolvent; 0.05-1wt% anticorrosive agent, and the balance is water. When there is an AlN substrate in the bottom coating of the photoresist or in the area in contact with the photoresist, the developer for slowing down the corrosion of the AlN substrate during the preparation of the photoresist has less corrosion to the AlN substrate, is less likely to foam, has a good development effect, and greatly improves the yield rate of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a schematic diagram of the thickness of the AlN film of the substrate in Example 1 of the present invention;

[0017] Figure 2 A schematic diagram of the thickness of the AlN film on the substrate after being immersed in the developer prepared in Example 1 of the present invention for 5 minutes;

[0018] Figure 3 It is a schematic diagram of the thickness of the AlN film of the substrate after being immersed in the commercially available developer of the present invention for 5 minutes;

[0019] Figure 4 , 5 This is a development diagram of the photoresist using the developer prepared in Example 1 of the present invention. DETAILED DESCRIPTION

[0020] The following will be combined with the specific embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] Introduction of raw materials and equipment in the examples:

[0022] The tetramethylammonium hydroxide in the embodiment of the present invention was purchased from Shanghai Jinjinle Industrial Co., Ltd., with a CAS number of 75-59-2 and a purity of 99%;

[0023] The sorbitan trioleate in the embodiment of the present invention was purchased from Nantong Arches Chemical Co., Ltd., with a CAS number of 2219-52-5 and a purity of 99%;

[0024] The ethylene glycol fatty acid ester in the embodiment of the present invention was purchased from Hubei Xinrunde Chemical Co., Ltd., with a CAS number of 111-60-4, a solid content of 30.0%, and a viscosity of ≥3000;

[0025] The sorbitan sesquioleate in the embodiment of the present invention was purchased from Guangdong Gulait New Material Technology Co., Ltd., with a CAS number of 8007-43-0, HLB=3.7, having a greasy smell, insoluble in water, and soluble in organic solvents;

[0026] The sorbitan monopalmitate in the embodiment of the present invention was purchased from Hai'an Petrochemical Plant in Jiangsu Province, with CAS No. 26266-58-0 and HLB=8.6;

[0027] The emulsified silicone oil in the embodiment of the present invention was purchased from Hubei Xingdongcheng Chemical Co., Ltd., a white emulsion, a pH value of 7, a viscosity of 500cs-9000cs, and an active content of ≥30%;

[0028] The polyoxypropylene glycerol ether in the embodiment of the present invention was purchased from Shanghai Jinjinle Industrial Co., Ltd., with a CAS number of 26587-37-1 and a purity of 99%;

[0029] The tetrazole in the embodiment of the present invention was purchased from Zhengzhou Keyulong Chemical Products Co., Ltd., with CAS No. 206-023-4 and a purity of 98%;

[0030] The pyrazole in the embodiment of the present invention was purchased from Shanghai MacLean Biochemical Technology Co., Ltd., with a CAS number of 288-13-1 and a purity of 99%;

[0031] The ethylene glycol in the embodiment of the present invention was purchased from Shanghai MacLean Biochemical Technology Co., Ltd., with a CAS number of 107-21-1 and a purity of 99%;

[0032] The diethylene glycol in the embodiment of the present invention was purchased from Shanghai MacLean Biochemical Technology Co., Ltd., with a CAS number of 111-46-6 and a purity of 99%;

[0033] Tetraethylene glycol in the embodiment of the present invention was purchased from Shanghai MacLean Biochemical Technology Co., Ltd., with a CAS number of 112-60-7 and a purity of 99%;

[0034] The glycerol in the embodiment of the present invention was purchased from Shanghai MacLean Biochemical Technology Co., Ltd., with a CAS number of 56-81-5 and a purity of 99%;

[0035] The developer for slowing down the corrosion of the AlN substrate of the present invention adds an anti-corrosion agent so that the aqueous developer reduces the corrosion of the aluminum substrate during the preparation of the photoresist. In addition, a defoaming agent is added to the developer to eliminate bubbles in the image solution, and a co-solvent is added to dissolve the developer, thereby enhancing the development effect and improving the yield rate of the product.

[0036] Example 1

[0037] A developer for slowing down corrosion of an AlN substrate comprises the following raw materials: 4wt% quaternary ammonium hydroxide; 0.1wt% surfactant; 0.5wt% defoamer; 1wt% cosolvent; 0.1wt% anticorrosive agent, and the balance is water.

[0038] Wherein, the quaternary ammonium hydroxide is tetramethylammonium hydroxide, the surfactant is sorbitan trioleate, the defoaming agent is emulsified silicone oil, the cosolvent is ethylene glycol, and the corrosion inhibitor is 1,2,3-oxadiazole.

[0039] The developer prepared in this example was used to test the corrosion resistance of the AlN film on the substrate. The test method was as follows: a layer of AlN film was uniformly deposited on the silicon substrate, and the surface morphology of the AlN film was tested. Figure 1 As shown; then after soaking in the developer prepared in Example 1 for 5 minutes, it was washed with pure water, dried with nitrogen, and then the surface morphology of the AlN film was tested. Figure 2 After soaking in commercially available developer for 5 minutes, the film was washed with pure water and dried with nitrogen before testing the surface morphology of the AlN film. Figure 3 .

[0040] from Figure 1 , 2 By comparison, it can be seen that the surface of the AlN film is relatively smooth, and the surface of the AlN film has basically no change, but Figure 1 , 3 By comparison, it can be seen that the AlN film No. 3 is severely corroded and damaged. By comprehensive comparison of 1, 2, and 3, it can be concluded that the developer of Example 1 has a good anti-corrosion effect and has a good protective effect on the substrate AlN film.

[0041] Example 2

[0042] A developer for slowing down the corrosion of an AlN substrate comprises the following raw materials: 3wt% of quaternary ammonium hydroxide; 0.4wt% of a surfactant; 0.7wt% of a defoamer; 2wt% of a cosolvent; 0.9wt% of an anticorrosive agent, and the balance is water.

[0043] Wherein, the quaternary ammonium hydroxide is tetramethylammonium hydroxide, the surfactant is ethylene glycol fatty acid ester, the defoaming agent is polyoxyethylene pentaerythritol ether, the cosolvent is diethylene glycol, and the corrosion inhibitor is tetrazole.

[0044] The corrosion resistance of the developer substrate AlN film prepared in this embodiment was tested. The testing method was: a layer of AlN film was uniformly deposited on the silicon wafer substrate, and then soaked in the developer prepared in Example 2 for 5 minutes, and then washed with pure water. At the same time, a commercially available developer was used to soak for 5 minutes, then washed with pure water and dried with nitrogen. It can be concluded that the developer in Example 2 has a good anti-corrosion effect and has a good protective effect on the substrate AlN film.

[0045] Example 3

[0046] A developer for slowing down the corrosion of an AlN substrate comprises the following raw materials: 3wt% of quaternary ammonium hydroxide; 0.9wt% of a surfactant; 0.6wt% of a defoamer; 2wt% of a cosolvent; 0.9wt% of an anticorrosive agent, and the balance is water.

[0047] Wherein, the quaternary ammonium hydroxide is tetramethylammonium hydroxide, the surfactant is sorbitan sesquioleate, the defoaming agent is polyoxypropylene propanolamine ether, the cosolvent is tetraethylene glycol, and the corrosion inhibitor is pyrazole.

[0048] The corrosion resistance of the developer substrate AlN film prepared in this embodiment was tested. The testing method was: a layer of AlN film was uniformly deposited on the silicon wafer substrate, and then soaked in the developer prepared in Example 3 for 5 minutes, and then washed with pure water. At the same time, a commercially available developer was used to soak for 5 minutes, then washed with pure water and dried with nitrogen. It can be concluded that the developer in Example 3 has a good anti-corrosion effect and has a good protective effect on the substrate AlN film.

[0049] Example 4

[0050] A developer for slowing down corrosion of an AlN substrate comprises the following raw materials: 4wt% of quaternary ammonium hydroxide; 0.1wt% of a surfactant; 0.5wt% of a defoamer; 1wt% of a cosolvent; 0.5wt% of an anticorrosive agent, and the balance is water.

[0051] Wherein, the quaternary ammonium hydroxide is tetramethylammonium hydroxide, the surfactant is sorbitan monopalmitate, the defoaming agent is polyoxypropylene glycerol ether, the cosolvent is glycerol, and the corrosion inhibitor is 1,2,3-oxadiazole.

[0052] The corrosion resistance of the developer substrate AlN film prepared in this embodiment was tested. The testing method was: a layer of AlN film was uniformly deposited on the silicon wafer substrate, and then soaked in the developer prepared in Example 4 for 5 minutes, and then washed with pure water. At the same time, a commercially available developer was used to soak for 5 minutes, then washed with pure water and dried with nitrogen. It can be concluded that the developer in Example 4 has a good anti-corrosion effect and has a good protective effect on the substrate AlN film.

[0053] The developer for slowing down the corrosion of the AlN substrate provided in the embodiment of the present invention can obtain the developer for slowing down the corrosion of the AlN substrate by uniformly mixing quaternary ammonium hydroxide, a surfactant, a defoamer, an anti-corrosion agent and water. When an AlN film exists in the base coat of the photoresist or in the area in contact with the photoresist, the developer for slowing down the corrosion of the AlN substrate has little corrosion to the AlN substrate, is not easy to foam, has a good development effect, and greatly improves the yield rate of the product.

[0054] The above description is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or substitutions within the technical scope disclosed by the present invention, and these modifications or substitutions should be included in the protection scope of the present invention.

Claims

1. A developer for slowing down corrosion of an AlN substrate, characterized in that: The method comprises the following raw materials: 1-5 wt% quaternary ammonium hydroxide; 0.01-2 wt% surfactant; 0.1-5 wt% defoamer; 0.5-3% cosolvent; 0.05-1 wt% anticorrosive agent, and the balance is water; Wherein, the corrosion inhibitor is one or more of imidazole, pyrazole, triazole, tetrazole, oxazole, 1,2,3-oxadiazole and thiazole.

2. The developer for slowing down the corrosion of AlN substrate according to claim 1, characterized in that: The quaternary ammonium hydroxide is one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra-n-propylammonium hydroxide, tetraisopropylammonium hydroxide, tetra-n-butylammonium hydroxide, tetraisobutylammonium hydroxide, tetra-tert-butylammonium hydroxide, methyltriethylammonium hydroxide, methyltripropylammonium hydroxide, dimethyldiethylammonium hydroxide, dimethyldipropylammonium hydroxide, dimethyldi-tert-butylammonium hydroxide, trimethylethylammonium hydroxide, trimethylpropylammonium hydroxide, and trimethyltert-butylammonium hydroxide.

3. The developer for slowing down the corrosion of AlN substrate according to claim 1, characterized in that: The surfactant is one or more of sorbitan trioleate, sorbitan tristearate, ethylene glycol fatty acid ester, propylene glycol fatty acid ester, propylene glycol monostearate, sorbitan sesquioleate, glyceryl monostearate, propylene glycol monolaurate, diethylene glycol monooleate, diethylene glycol monostearate, diethylene glycol fatty acid ester, diethylene glycol monolaurate, sorbitan monopalmitate, tetraethylene glycol monostearate, tetraethylene glycol monooleate, tetraethylene glycol monolaurate, and hexaethylene glycol monostearate.

4. The developer for slowing down the corrosion of AlN substrate according to claim 3, characterized in that: The surfactant is one or more of sorbitan trioleate, ethylene glycol fatty acid ester, sorbitan sesquioleate, and sorbitan monopalmitate.

5. The developer for slowing down the corrosion of AlN substrate according to claim 1, characterized in that: The defoaming agent is one or more of emulsified silicone oil, higher alcohol fatty acid ester, polyoxyethylene pentaerythritol ether, polyoxypropylene pentaerythritol ether, polyoxyethylene propanolamine ether, polyoxypropylene propanolamine ether, polydimethylsiloxane, and polyoxypropylene glycerol ether.

6. The developer for slowing down the corrosion of AlN substrate according to claim 5, characterized in that: The defoaming agent is one or more of emulsified silicone oil, polyoxyethylene pentaerythritol ether, polyoxypropylene propanolamine ether, and polyoxypropylene glycerol ether.

7. The developer for slowing down the corrosion of AlN substrate according to claim 1, characterized in that: The co-solvent is one or more of ethylene glycol, diethylene glycol, tetraethylene glycol, hexaethylene glycol, propylene glycol, and glycerol.

8. The developer for slowing down the corrosion of AlN substrate according to claim 7, characterized in that: The co-solvent is one or more of ethylene glycol, diethylene glycol, tetraethylene glycol and glycerol.

9. The developer for slowing down the corrosion of AlN substrate according to claim 1, characterized in that: The anti-corrosion agent is one or more of 1,2,3-oxadiazole, tetrazole and pyrazole.

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