Substrate processing device and purging method

By designing a switchable substrate conveying chamber and an expanded and contracted bag body in the substrate processing device, the problem of long replacement of the substrate conveying chamber with inactive gas is solved, and the process efficiency is improved.

CN113161260BActive Publication Date: 2025-03-18TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202110052278.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-01-22
Filing Date
2021-01-15
Publication Date
2025-03-18
Estimated Expiration
2041-01-15

AI Technical Summary

Technical Problem

In the prior art, the substrate conveying chamber is replaced with inactive gas for a long time, which affects the process efficiency.

Method used

A substrate processing device is designed, including a substrate conveying chamber and a bag body. The substrate conveying chamber can be switched between an atmospheric environment and an inactive gas environment. The bag expands through the introduction gas and the exhaust gas shrinks, which is used to adjust the volume of the substrate conveying chamber and shorten the replacement time.

Benefits of technology

With this device, the time for the substrate conveying chamber to be replaced with inactive gas can be significantly shortened, and the process efficiency can be improved.

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Abstract

The present invention provides a substrate processing device and a purging method. A technology capable of shortening the time of replacing the interior of a substrate transfer chamber with an inactive gas is provided. A substrate processing device in one embodiment of the present invention comprises: a substrate transfer chamber capable of switching between an atmospheric environment and an inactive gas environment; and a bag body disposed in the substrate transfer chamber, which expands by introducing gas and contracts by exhausting gas.
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Description

Technical Field

[0001] The invention relates to a substrate processing device and a purging method. Background Art

[0002] A batch heat treatment apparatus for processing a plurality of substrates at a time is known (for example, see Patent Document 1). In the apparatus, a substrate transfer chamber is provided for transferring the substrates in the carrier to the wafer boat. Nitrogen gas is supplied to the substrate transfer chamber to replace the interior with a nitrogen atmosphere.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2002-299262 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology capable of shortening the time required to replace the interior of a substrate transfer chamber with an inert gas.

[0008] Solutions for solving problems

[0009] A substrate processing apparatus according to one embodiment of the present disclosure includes: a substrate transfer chamber capable of switching between an atmospheric environment and an inert gas environment; and a bag body provided in the substrate transfer chamber and expanded by introduction of gas and contracted by exhaustion of gas.

[0010] Effects of the Invention

[0011] According to the present disclosure, it is possible to shorten the time required to replace the interior of the substrate transfer chamber with an inert gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a perspective view (1) showing a structural example of a substrate processing apparatus according to a first embodiment.

[0013] Figure 2 This is a perspective view (2) showing a structural example of the substrate processing apparatus according to the first embodiment.

[0014] Figure 3 1 is a cross-sectional view showing a structural example of a substrate processing apparatus according to a first embodiment.

[0015] Figure 4 This is a cross-sectional view (2) showing a structural example of the substrate processing apparatus according to the first embodiment.

[0016] Figure 5This is a flowchart showing an example of the operation of the substrate processing apparatus according to the first embodiment.

[0017] Figure 6 1 is a cross-sectional view showing a configuration example of a substrate processing apparatus according to a second embodiment.

[0018] Figure 7 This is a cross-sectional view (2) showing a structural example of a substrate processing apparatus according to a second embodiment.

[0019] Figure 8 1 is a cross-sectional view showing a structural example of a substrate processing apparatus according to a third embodiment.

[0020] Fig. 9 This is a cross-sectional view (2) showing a structural example of a substrate processing apparatus according to a third embodiment.

[0021] Fig.10 1 is a cross-sectional view showing a structural example of a substrate processing apparatus according to a fourth embodiment.

[0022] Fig.11 This is a cross-sectional view (2) showing a structural example of a substrate processing apparatus according to a fourth embodiment.

[0023] Fig.12 This is a flowchart showing an example of the operation of the substrate processing apparatus according to the fourth embodiment.

[0024] Description of Reference Numerals

[0025] 1. 1A to 1C: substrate processing device; 20: substrate transfer chamber; 21: circulation flow forming part; 23: volume adjustment part; 23a: bag body; 23b: plate-like member; 23c: air inlet pipe; 23d: air inlet valve; 23e: air exhaust pipe; 23f: air exhaust valve; 23g: flow controller; 23h: pressure gauge; 25: lifting mechanism; 25a: lifting part; 26: oxygen concentration meter. DETAILED DESCRIPTION

[0026] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the drawings, the same or corresponding components or parts are given the same or corresponding reference numerals, and repeated descriptions are omitted.

[0027] [First embodiment]

[0028] (Substrate processing equipment)

[0029] Reference Figures 1 to 4 A configuration example of the substrate processing apparatus according to the first embodiment will be described. Figure 1 and Figure 2 It is a perspective view showing a structural example of the substrate processing apparatus according to the first embodiment. Figure 3 and Figure 4 1 is a cross-sectional view showing a structural example of a substrate processing apparatus according to the first embodiment. Figure 1 and Figure 3 Shows the state of bag shrinkage. Figure 2 and Figure 4 Shows the state of the bag being expanded.

[0030] The substrate processing apparatus 1 is configured to perform a semiconductor manufacturing process on a substrate. The substrate includes, for example, a semiconductor wafer. The semiconductor manufacturing process includes, for example, an oxidation process, an annealing process, and a film forming process.

[0031] The substrate processing apparatus 1 is configured to be accommodated in a housing 2 constituting an outer shell of the apparatus. A carrier transfer chamber 10, a substrate transfer chamber 20, and a heat treatment chamber 30 are formed in the housing 2. The carrier transfer chamber 10 and the substrate transfer chamber 20 are separated by a partition wall 3. A transfer port 4 is provided in the partition wall 3, and the transfer port 4 is used to connect the carrier transfer chamber 10 and the substrate transfer chamber 20 to transfer the substrate. The transfer port 4 is opened and closed by a door mechanism (not shown) in accordance with the FIMS (Front-Opening Interface Mechanical Standard) standard.

[0032] The interior of the carrier transfer chamber 10 is an atmospheric environment area. The carrier transfer chamber 10 is an area for transferring a carrier C containing a substrate between elements described later in the substrate processing apparatus 1, for transferring the carrier C from the outside into the substrate processing apparatus 1, or for transferring the carrier C from the substrate processing apparatus 1 to the outside. The carrier C may be, for example, a FOUP (Front-Opening Unified Pod).

[0033] The carrier transfer chamber 10 is provided with a load port 11 , a FIMS port 12 , a storage cabinet 13 , and a carrier transfer mechanism 14 .

[0034] The loading port 11 is provided at a position where the wall of the front surface of the housing 2 is opened, and the substrate processing apparatus 1 can be accessed from the outside. Specifically, a carrier C can be brought in and placed on the loading port 11, and the carrier C can be brought out from the loading port 11 to the outside, by a transfer device (not shown) provided outside the substrate processing apparatus 1. For example, two loading ports 11 are provided on the left and right. The loading port 11 is a loading table for receiving the carrier C when the carrier C is brought into the substrate processing apparatus 1.

[0035] The FIMS port 12 is provided on the partition wall 3 side in the carrier transfer chamber 10 . The FIMS port 12 is a holding table for holding the carrier C when a substrate in the carrier C is loaded into and unloaded from a processing container 31 in the substrate transfer chamber 20 , which will be described later.

[0036] The storage cabinet 13 is installed above the load port 11 and above the FIMS port 12 in the carrier transfer chamber 10. The storage cabinet 13 is a storage rack for storing a plurality of carriers C.

[0037] The carrier transport mechanism 14 is arranged in the carrier transport chamber 10. The carrier transport mechanism 14 transports the carrier C between the loading port 11, the FIMS port 12 and the storage cabinet 13. The carrier transport mechanism 14 includes a lifting mechanism 14a, a lifting arm 14b, an arm 14c and a transport arm 14d. The lifting mechanism 14a is arranged to extend in the up-down direction on one side of the carrier transport chamber 10. The lifting arm 14b is connected to the lifting mechanism 14a and is lifted and moved by the lifting mechanism 14a. The arm 14c is rotatably connected to the top end of the lifting arm 14b. The transport arm 14d is rotatably connected to the top end of the arm 14c, and supports the bottom of the carrier C to transport the carrier C.

[0038] The substrate transfer chamber 20 is arranged at the rear of the carrier transfer chamber 10. The substrate transfer chamber 20 is configured to be switchable between an atmospheric environment and an inert gas environment. By making the substrate transfer chamber 20 an inert gas environment, the formation of an oxide film on the substrate is suppressed. The inert gas may be, for example, nitrogen (N2) or argon (Ar). The substrate transfer chamber 20 takes out a substrate from the carrier C and transfers the substrate to the heat treatment chamber 30.

[0039] The substrate transfer chamber 20 is provided with a circulation flow forming unit 21 , an N 2 gas supply unit 22 , a volume adjusting unit 23 , a cover 24 , a lifting mechanism 25 , an oxygen concentration meter 26 , and a substrate transfer mechanism 27 .

[0040] The circulation flow forming unit 21 circulates the inert gas in the substrate transfer chamber 20. The circulation flow forming unit 21 includes a filter 21a, a blower 21b, a side partition wall 21c, a bottom partition wall 21d, and a heat exchanger 21e.

[0041] The filter 21a is provided at one side of the substrate transfer chamber 20. The filter 21a includes, for example, a HEPA filter (High Efficiency Particulate Air Filter) or a ULPA filter (Ultra-Low Penetration Air Filter).

[0042] The blower 21 b is a fan for circulating the inert gas and is used to supply the gas (for example, inert gas) purified by the filter 21 a to the substrate transfer chamber 20 .

[0043] The side partition wall 21c is provided on the surface side opposite to the installation surface of the filter 21a in the substrate transfer chamber 20, and is provided in a manner that is spaced apart from the side wall of the substrate transfer chamber 20. The side partition wall 21c has many ventilation holes (not shown). A side circulation passage F1 is formed between the side partition wall 21c and the side wall of the substrate transfer chamber 20.

[0044] The bottom partition wall 21d is provided at the bottom of the substrate transfer chamber 20 with a gap therebetween. A bottom circulation passage F2 is formed between the bottom partition wall 21d and the bottom of the substrate transfer chamber 20.

[0045] The heat exchanger 21e is provided in the bottom circulation passage F2. The heat exchanger 21e cools the inert gas flowing in the bottom circulation passage F2.

[0046] In the circulation flow forming section 21, the inert gas blown in the horizontal direction by the blower 21b through the filter 21a flows into the side circulation passage F1 from the plurality of vents formed in the side partition wall 21c after passing through the substrate transfer chamber 20. Then, the inert gas flows from the side circulation passage F1 into the bottom circulation passage F2, is cooled by the heat exchanger 21e, and flows into the filter 21a again. The inert gas circulates in this way. Figure 3 and Figure 4 In FIG. 1 , the flow of the circulating inert gas is indicated by arrows F.

[0047] The N2 gas supply unit 22 supplies N2 gas into the substrate transfer chamber 20. The N2 gas supply unit 22 includes a supply pipe 22a, an N2 gas supply valve 22b, a horizontal pipe 22c, and a vertical pipe 22d.

[0048] One end of the supply pipe 22a is connected to a N2 gas supply source (not shown), and the other end is connected to the horizontal pipe 22c and the vertical pipe 22d. Thus, the N2 gas supplied from the N2 gas supply source is introduced into the horizontal pipe 22c and the vertical pipe 22d.

[0049] The N2 gas supply valve 22b is provided on the supply pipe 22a. When the N2 gas supply valve 22b is opened, the N2 gas is introduced into the horizontal pipe 22c and the vertical pipe 22d, and when the N2 gas supply valve 22b is closed, the introduction of the N2 gas into the horizontal pipe 22c and the vertical pipe 22d is cut off.

[0050] The horizontal pipe 22c is arranged to extend along the four sides of the bottom surface of the substrate transfer chamber 20. The vertical pipe 22d is arranged to be connected to the horizontal pipe 22c at the four corners of the bottom surface of the substrate transfer chamber 20, and to extend from the horizontal pipe 22c in the height direction. A plurality of gas ejection holes 22h are provided in the horizontal pipe 22c and the vertical pipe 22d. Preferably, the plurality of gas ejection holes 22h are provided at least at the eight corners in the substrate transfer chamber 20. Thus, the replacement of the inert gas in the area which is difficult to reach by the circulating flow formed by the circulating flow forming unit 21 can be promoted.

[0051] The volume adjusting unit 23 adjusts the volume in the substrate transfer chamber 20. The volume adjusting unit 23 includes a bag 23a, a plate member 23b, an air introduction pipe 23c, an air introduction valve 23d, an air exhaust pipe 23e, an air exhaust valve 23f, a flow controller 23g, and a pressure gauge 23h.

[0052] The bag body 23a is provided in the substrate transfer chamber 20. The bag body 23a is airtight. The bag body 23a is expanded by introducing air ( Figure 2 and Figure 4 ), shrinking by exhausting air ( Figure 1 and Figure 3 The lower part of the bag body 23a is fixed to the bottom of the substrate transfer chamber 20. The bag body 23a is formed of, for example, a telescopic member. However, the bag body 23a may also be formed of a telescopic structure such as a bellows.

[0053] The plate-like member 23b is mounted on the upper part of the bag body 23a. The plate-like member 23b is formed of, for example, stainless steel. By providing the plate-like member 23b, when the air exhaust valve 23f is opened, the bag body 23a shrinks due to the weight of the plate-like member 23b. Therefore, it is not necessary to provide a mechanism for forcibly sucking the inside of the bag body 23a.

[0054] The air introduction pipe 23c sucks air from the outside of the substrate transfer chamber 20 and introduces the air into the bag body 23a. As a result, the bag body 23a expands.

[0055] The air introduction valve 23d is provided in the air introduction pipe 23c. When the air introduction valve 23d is opened, air is introduced from the air introduction pipe 23c into the bag body 23a, and when the air introduction valve 23d is closed, the introduction of air from the air introduction pipe 23c into the bag body 23a is cut off. The opening and closing action of the air introduction valve 23d is controlled by, for example, the control unit 100 described later.

[0056] The air exhaust pipe 23e exhausts air from the bag body 23a to the outside of the substrate transfer chamber 20. As a result, the bag body 23a contracts. A pump or the like for forcibly exhausting air from the bag body 23a may be provided in the air exhaust pipe 23e. As a result, the time for exhausting air from the bag body 23a can be shortened.

[0057] The air exhaust valve 23f is provided on the air exhaust pipe 23e. When the air exhaust valve 23f is opened, the air in the bag 23a is exhausted through the air exhaust pipe 23e, and when the air exhaust valve 23f is closed, the exhaust of the air in the bag 23a through the air exhaust pipe 23e is cut off. The opening and closing action of the air exhaust valve 23f is controlled by, for example, the control unit 100 described later.

[0058] The flow controller 23g is provided in the air discharge pipe 23e. The flow controller 23g controls the flow rate of the air discharged from the air discharge pipe 23e. In other words, the flow controller 23g controls the discharge speed of the air discharged from the air discharge pipe 23e. The flow controller 23g is controlled by, for example, the control unit 100 described later.

[0059] The pressure gauge 23h is provided in the air exhaust pipe 23e. The pressure gauge 23h detects the pressure in the bag body 23a. The pressure detected by the pressure gauge 23h is sent to the control unit 100 described later.

[0060] The cover 24 is provided in the substrate transfer chamber 20 so as to be able to be raised and lowered. The cover 24 is provided integrally with the substrate holder 36 below the substrate holder 36. Thus, when the cover 24 moves to the raised position, the substrate holder 36 is carried into the processing container 31. On the other hand, when the cover 24 moves to the lowered position, the substrate holder 36 is carried out from the processing container 31.

[0061] The lifting mechanism 25 supports the lower surface of the cover 24 and lifts the cover 24. The lifting mechanism 25 includes, for example, a lifting unit 25a, a ball screw 25b, and a motor 25c. The lifting unit 25a supports the lower surface of the cover 24 and lifts the cover 24 by lifting in the substrate transfer chamber 20. The ball screw 25b and the motor 25c lift the lifting unit 25a.

[0062] The oxygen concentration meter 26 detects the oxygen (O 2 ) concentration in the substrate transfer chamber 20 . The oxygen concentration meter 26 transmits the detection value to the control unit 100 .

[0063] The substrate transfer mechanism 27 is provided in the substrate transfer chamber 20 . The substrate transfer mechanism 27 transfers the substrate between the carrier C held on the FIMS port 12 and the substrate holder 36 .

[0064] The heat treatment chamber 30 is disposed above the substrate transfer chamber 20. The heat treatment chamber 30 is a region where a semiconductor manufacturing process is performed on a substrate. The heat treatment chamber 30 is provided with a processing container 31, a heater 32, a processing gas introduction unit 33, a processing gas exhaust unit 34, and an exhaust duct 35.

[0065] The processing container 31 is a long reaction tube whose lower end is opened as a furnace opening. The processing container 31 has a cylindrical shape and houses a substrate holder 36 therein.

[0066] The heater 32 is provided around the processing container 31. The heater 32 has, for example, a cylindrical shape. The heater 32 heats the substrate accommodated in the processing container 31.

[0067] The process gas introduction unit 33 introduces the process gas into the process container 31. The process gas introduction unit 33 includes a gas supply pipe, a valve, a flow controller, etc. The process gas is selected according to the semiconductor manufacturing process.

[0068] The process gas exhaust unit 34 exhausts the process gas in the process container 31. The process gas exhaust unit 34 includes a gas exhaust pipe, a valve, a pressure controller, a vacuum pump, and the like.

[0069] The exhaust duct 35 includes a first vertical duct 35a, a second vertical duct 35b, and a horizontal duct 35c.

[0070] One end of the first vertical duct 35a is disposed in the substrate transfer chamber 20, and the other end is connected to the horizontal duct 35c. The first vertical duct 35a exhausts the substrate transfer chamber 20. For example, a needle valve 35d is disposed in the first vertical duct 35a. By adjusting the opening of the needle valve 35d, the pressure in the substrate transfer chamber 20 can be controlled.

[0071] One end of the second vertical duct 35b is disposed in the processing gas introduction part 33, and the other end is connected to the horizontal duct 35c. The second vertical duct 35b exhausts the processing gas introduction part 33.

[0072] The substrate holder 36 is made of quartz, for example, and is configured to hold the substrate substantially horizontally at a predetermined interval in the vertical direction. The number of substrates stored in the substrate holder 36 is not particularly limited, and may be, for example, 50 to 200. The substrate holder 36 is placed on the cover 24 via the heat-insulating cylinder 37. In other words, the cover 24 is provided integrally with the substrate holder 36 below the substrate holder 36.

[0073] In addition, a control unit 100 is provided in the substrate processing apparatus 1. The control unit 100 controls each unit of the substrate processing apparatus 1. The control unit 100 may be, for example, a computer. In addition, a computer program for performing the operations of each unit of the substrate processing apparatus 1 is stored in a storage medium. The storage medium may be, for example, a floppy disk, an optical disk, a hard disk, a flash memory, a DVD, etc.

[0074] (Purge method)

[0075] Reference Figure 5An example of the operation of the substrate processing apparatus 1 according to the first embodiment will be described. Figure 5 1 is a flowchart showing an example of the operation of the substrate processing apparatus 1 according to the first embodiment. Next, as an example of the operation of the substrate processing apparatus 1, a purging method for purging the inside of the substrate transfer chamber 20 of the substrate processing apparatus 1 is described. In addition, as an initial state, the furnace port of the processing container 31 is sealed by the cover 24, the N2 gas supply valve 22b, the air introduction valve 23d and the air exhaust valve 23f are closed, and the opening of the needle valve 35d is adjusted so that the pressure inside the substrate transfer chamber 20 is constant.

[0076] First, the control unit 100 opens the air introduction valve 23d (step S11). As a result, air is introduced into the bag body 23a, and the bag body 23a expands. As a result, the volume in the substrate transfer chamber 20 to be replaced by N2 gas (hereinafter also referred to as "N2 replacement volume") is reduced.

[0077] Next, the control unit 100 opens the N2 gas supply valve 22b (step S12). As a result, the N2 gas is introduced into the substrate transfer chamber 20, and the oxygen and other gases remaining in the substrate transfer chamber 20 are exhausted from the exhaust pipe 35, thereby replacing the atmosphere in the substrate transfer chamber 20 with the N2 gas environment. At this time, since the bag body 23a expands in the substrate transfer chamber 20, the N2 replacement volume is reduced. Therefore, the time required for replacement in the substrate transfer chamber 20 can be shortened. In addition, step S12 can also be performed in parallel with step S11.

[0078] Next, the control unit 100 determines whether the bag 23a is full (step S13). This determination is made, for example, based on whether the pressure in the bag 23a detected by the pressure gauge 23h is above a preset pressure. When the pressure of the bag 23a detected by the pressure gauge 23h is above a preset pressure, the control unit 100 determines that the bag 23a is full. On the other hand, when the pressure of the bag 23a detected by the pressure gauge 23h is less than a preset pressure, the control unit 100 determines that the bag 23a is not full. When it is determined in step S13 that the bag 23a is not full, the control unit 100 executes step S13 again. On the other hand, when it is determined in step S13 that the bag 23a is full, the control unit 100 closes the air introduction valve 23d (step S14). As a result, the introduction of air into the bag 23a is cut off, and the bag 23a maintains an inflated state.

[0079] Next, the control unit 100 determines whether the pressure in the bag body 23a is reduced (step S15). This determination is made, for example, based on whether the pressure in the bag body 23a detected by the pressure gauge 23h is below a preset pressure. When the pressure in the bag body 23a detected by the pressure gauge 23h is below a preset pressure, the control unit 100 determines that the pressure in the bag body 23a is reduced, and the process returns to step S11. That is, the control unit 100 opens the air introduction valve 23d to introduce air into the bag body 23a. On the other hand, when the pressure in the bag body 23a detected by the pressure gauge 23h is greater than the preset pressure, the control unit 100 determines that the pressure in the bag body 23a is not reduced. Then, the control unit 100 determines whether the oxygen concentration in the substrate transfer chamber 20 detected by the oxygen concentration meter 26 is below a preset management value (step S16).

[0080] When the oxygen concentration in the substrate transfer chamber 20 detected by the oxygen concentration meter 26 is not less than the preset management value in step S16, the control unit 100 returns the process to step S15. On the other hand, when the oxygen concentration in the substrate transfer chamber 20 detected by the oxygen concentration meter 26 is less than the preset management value in step S16, the control unit 100 opens the air exhaust valve 23f (step S17). Thus, the air in the bag body 23a is exhausted, and the bag body 23a starts to shrink.

[0081] Next, the control unit 100 determines whether the bag body 23a is sufficiently shrunk (step S18). This determination is made based on whether the pressure inside the bag body 23a detected by the pressure gauge 23h reaches a preset pressure. The pressure may be, for example, atmospheric pressure. When the pressure inside the bag body 23a detected by the pressure gauge 23h does not reach the preset pressure, the control unit 100 determines that the bag body 23a is not sufficiently shrunk, and executes step S18 again. When the pressure inside the bag body 23a detected by the pressure gauge 23h reaches the preset pressure, the control unit 100 determines that the bag body 23a is sufficiently shrunk, closes the air exhaust valve 23f (step S19), and ends the process.

[0082] As described above, the substrate processing apparatus 1 of the first embodiment includes: a substrate transfer chamber 20 that can switch between an atmospheric environment and an inert gas environment; and a bag body 23a that is disposed in the substrate transfer chamber 20 and expands by introducing gas and contracts by exhausting gas. Thus, the bag body 23a can be expanded in the substrate transfer chamber 20 to reduce the N2 replacement volume. Therefore, the circulating flow formed by the circulating flow forming unit 21 can easily reach the corner portion in the substrate transfer chamber 20 that is difficult to reach when the N2 replacement volume is large. As a result, the time required to switch the substrate transfer chamber 20 from the atmospheric environment to the inert gas environment can be shortened.

[0083] In addition, according to the substrate processing apparatus 1 of the first embodiment, when the substrate transfer chamber 20 is switched from the atmospheric environment to the inert gas environment, the bag body 23a is temporarily expanded to reduce the N2 replacement volume. Therefore, unlike the case where the N2 replacement volume is continuously reduced, the lifting and lowering action of the substrate holder 36 and the transfer action of the substrate by the substrate transfer mechanism 27 are not hindered.

[0084] Furthermore, in the substrate processing apparatus 1 of the first embodiment, a case where one bag 23 a is provided in the substrate transfer chamber 20 is described, but the present disclosure is not limited thereto. For example, two or more bags 23 a may be provided.

[0085] [Second embodiment]

[0086] Reference Figure 6 and Figure 7 A configuration example of a substrate processing apparatus according to a second embodiment will be described. Figure 6 and Figure 7 2 is a cross-sectional view showing a structural example of a substrate processing apparatus according to a second embodiment. Figure 6 Shows the state of bag shrinkage. Figure 7 Shows the state of the bag being expanded.

[0087] In the substrate processing apparatus 1A of the second embodiment, the upper part of the bag body 23a is fixed to the top of the substrate transfer chamber 20, and a plate-shaped member 23b is provided at the lower part of the bag body 23a. In addition, the air exhaust pipe 23e is connected to an exhaust device such as a vacuum pump 23p that forcibly exhausts air from the bag body 23a. In addition, the other structures are the same as those of the substrate processing apparatus 1 of the first embodiment.

[0088] The substrate processing apparatus 1A of the second embodiment is similar to the substrate processing apparatus 1, and includes: a substrate transfer chamber 20 that can switch between an atmospheric environment and an inert gas environment; and a bag body 23a that is disposed in the substrate transfer chamber 20 and expands by introducing gas and contracts by exhausting gas. Thus, the bag body 23a can be expanded in the substrate transfer chamber 20 to reduce the N2 replacement volume. Therefore, the circulating flow formed by the circulating flow forming unit 21 can easily reach the corner portion of the substrate transfer chamber 20 that is difficult to reach when the N2 replacement volume is large. As a result, the time required to switch the substrate transfer chamber 20 from the atmospheric environment to the inert gas environment can be shortened.

[0089] In addition, according to the substrate processing apparatus 1A of the second embodiment, similarly to the substrate processing apparatus 1, when the inside of the substrate transfer chamber 20 is switched from the atmospheric environment to the inert gas environment, the bag body 23a is temporarily expanded to reduce the N2 replacement volume. Therefore, unlike the case where the N2 replacement volume is continuously reduced, the lifting and lowering operation of the substrate holder 36 and the transfer operation of the substrate by the substrate transfer mechanism 27 are not hindered.

[0090] In the substrate processing apparatus 1A of the second embodiment, the case where two bags 23 a are provided in the substrate transfer chamber 20 is described, but the present disclosure is not limited thereto. For example, the number of the bag 23 a may be one or three or more.

[0091] In addition, the operation of the substrate processing apparatus 1A of the second embodiment may be the same as the operation of the substrate processing apparatus 1 of the first embodiment. However, in the substrate processing apparatus 1A of the second embodiment, when the control unit 100 opens the air exhaust valve 23f in step S17, the air in the bag body 23a is exhausted through the air exhaust pipe 23e by suction of the vacuum pump 23p, and the bag body 23a begins to shrink.

[0092] [Third embodiment]

[0093] Reference Figure 8 and Fig. 9 A configuration example of a substrate processing apparatus according to a third embodiment will be described. Figure 8 and Fig. 9 2 is a cross-sectional view showing a structural example of a substrate processing apparatus according to a third embodiment. Figure 8 Shows the state of bag shrinkage. Fig. 9 Shows the state of the bag being expanded.

[0094] In the substrate processing apparatus 1B of the third embodiment, the air introduction pipe 23c is arranged so as to be able to suck in the gas blown by the blower 21b of the circulation flow forming unit 21. The air introduction pipe 23c is provided with an air introduction valve 23d.

[0095] In addition, in the substrate processing apparatus 1B of the third embodiment, an air exhaust pipe 23e is provided to connect the inside of the bag body 23a and the exhaust duct 35. An air exhaust valve 23f and a flow controller 23g are provided in the air exhaust pipe 23e. In addition, the other structures are the same as those of the substrate processing apparatus 1 of the first embodiment.

[0096] The substrate processing apparatus 1B of the third embodiment is similar to the substrate processing apparatus 1, and includes: a substrate transfer chamber 20 that can be switched between an atmospheric environment and an inert gas environment; and a bag body 23a that is disposed in the substrate transfer chamber 20 and expands by introducing gas and contracts by exhausting gas. Thus, the bag body 23a can be expanded in the substrate transfer chamber 20 to reduce the N2 replacement volume. Therefore, the circulating flow formed by the circulating flow forming unit 21 can easily reach the corner portion of the substrate transfer chamber 20 that is difficult to reach when the N2 replacement volume is large. As a result, the time required to switch the substrate transfer chamber 20 from the atmospheric environment to the inert gas environment can be shortened.

[0097] In addition, according to the substrate processing apparatus 1B of the third embodiment, similarly to the substrate processing apparatus 1, when the inside of the substrate transfer chamber 20 is switched from the atmospheric environment to the inert gas environment, the bag body 23a is temporarily expanded to reduce the N2 replacement volume. Therefore, unlike the case where the N2 replacement volume is continuously reduced, the lifting and lowering action of the substrate holder 36 and the transfer action of the substrate by the substrate transfer mechanism 27 are not hindered.

[0098] In addition, the operation of the substrate processing apparatus 1B according to the third embodiment may be the same as the operation of the substrate processing apparatus 1 according to the first embodiment.

[0099] [Fourth embodiment]

[0100] (Substrate processing equipment)

[0101] Reference Fig.10 and Fig.11 A configuration example of a substrate processing apparatus according to a fourth embodiment will be described. Fig.10 and Fig.11 4 is a cross-sectional view showing a structural example of a substrate processing apparatus according to a fourth embodiment. Fig.10 Shows the state of bag shrinkage. Fig.11 Shows the state of the bag being expanded.

[0102] The difference between the substrate processing apparatus 1C of the fourth embodiment and the substrate processing apparatus 1 of the first embodiment is that the upper portion of the bag body 23a is fixed to the lifting portion 25a of the lifting mechanism 25, and the lower portion of the bag body 23a is fixed to the bottom of the substrate transfer chamber 20. The following description will focus on the differences from the substrate processing apparatus 1 of the first embodiment.

[0103] The volume adjusting unit 23 adjusts the volume in the substrate transfer chamber 20. The volume adjusting unit 23 includes a bag 23a, a through pipe 23i, and a valve 23j.

[0104] The bag 23a is installed in the substrate transfer chamber 20. The upper part of the bag 23a is fixed to the lifting part 25a of the lifting mechanism 25, and the lower part is fixed to the bottom of the substrate transfer chamber 20. The bag 23a is airtight. As the lifting part 25a rises, the air is introduced into the bag 23a through the through pipe 23i, and the bag 23a expands ( Fig.11 ), as the lifting part 25a descends, the air inside the bag body 23a is discharged through the through pipe 23i, and the bag body 23a shrinks ( Fig.10 The bag body 23a is formed of, for example, a telescopic member. However, the bag body 23a may be formed of a telescopic structure such as a bellows.

[0105] The through-pipe 23i allows the inside of the bag body 23a to communicate with the external space. The through-pipe 23i is provided with a valve 23j.

[0106] (Purge method)

[0107] Reference Fig.12 An example of the operation of the substrate processing apparatus 1C according to the fourth embodiment will be described. Fig.12 1 is a flowchart showing an example of the operation of the substrate processing apparatus 1C according to the fourth embodiment. Next, as an example of the operation of the substrate processing apparatus 1C, a purging method for purging the inside of the substrate transfer chamber 20 of the substrate processing apparatus 1C is described. In addition, as an initial state, the furnace port of the processing container 31 is sealed by the cover 24, the opening of the needle valve 35d is adjusted so that the pressure inside the substrate transfer chamber 20 is constant, and the lifting part 25a is lowered to the lower end.

[0108] First, the control unit 100 raises the lifting unit 25a of the lifting mechanism 25 (step S41). As a result, air is introduced into the bag body 23a through the through pipe 23i, and the bag body 23a expands. As a result, the N2 replacement volume decreases.

[0109] After the bag body 23a is expanded by raising the lifting portion 25a of the lifting mechanism 25, the control unit 100 closes the valve 23j provided in the through pipe 23i (step S42).

[0110] Next, the control unit 100 opens the N2 gas supply valve 22b (step S43). Thus, the N2 gas is introduced into the substrate transfer chamber 20, and the atmosphere in the substrate transfer chamber 20 is replaced by the N2 gas environment by discharging the residual oxygen and other gases in the substrate transfer chamber 20 from the exhaust pipe 35. At this time, since the bag body 23a expands in the substrate transfer chamber 20, the N2 replacement volume is reduced. Therefore, the time required for replacement in the substrate transfer chamber 20 can be shortened. In addition, when the N2 gas is introduced into the substrate transfer chamber 20, the bag body 23a may shrink due to the gas pressure of the introduced N2 gas, but since the valve 23j is closed in step S43, the air in the bag body 23a will not be discharged through the through pipe 23i. Therefore, the shrinkage of the bag body 23a caused by the gas pressure of the N2 gas introduced into the substrate transfer chamber 20 can be suppressed.

[0111] Next, the control unit 100 determines whether the oxygen concentration in the substrate transfer chamber 20 detected by the oxygen concentration meter 26 is less than a preset management value (step S44). When the oxygen concentration in the substrate transfer chamber 20 detected by the oxygen concentration meter 26 is not less than the preset management value in step S44, the control unit 100 executes step S44 again. On the other hand, when the oxygen concentration in the substrate transfer chamber 20 detected by the oxygen concentration meter 26 is less than the preset management value in step S44, the control unit 100 opens the valve 23j provided in the through pipe 23i (step S45).

[0112] Next, the control unit 100 lowers the lifting unit 25a of the lifting mechanism 25 (step S46), and ends the process. At this time, as the lifting unit 25a is lowered, the air in the bag body 23a is discharged through the through pipe 23i, and the bag body 23a shrinks.

[0113] As described above, the substrate processing apparatus 1C of the fourth embodiment includes: a substrate transfer chamber 20 that can be switched between an atmospheric environment and an inert gas environment; and a bag body 23a that is provided in the substrate transfer chamber 20 and expands by introducing gas and contracts by exhausting gas. Thus, the bag body 23a can be expanded in the substrate transfer chamber 20 to reduce the N2 replacement volume. Therefore, the circulating flow formed by the circulating flow forming unit 21 can easily reach the corner portion in the substrate transfer chamber 20 that is difficult to reach when the N2 replacement volume is large. As a result, the time required to switch the substrate transfer chamber 20 from the atmospheric environment to the inert gas environment can be shortened.

[0114] In addition, according to the substrate processing apparatus 1C of the fourth embodiment, when the substrate transfer chamber 20 is switched from the atmospheric environment to the inert gas environment, the bag body 23a is temporarily expanded to reduce the N2 replacement volume. Therefore, unlike the case where the N2 replacement volume is continuously reduced, the lifting and lowering operation of the substrate holder 36 and the transfer operation of the substrate by the substrate transfer mechanism 27 are not hindered.

[0115] The first to fourth embodiments have been described above, but the present disclosure is not limited thereto, and for example, two or more of the first to fourth embodiments may be combined.

[0116] In the above-described embodiment, the air introduction pipe 23c and the air introduction valve 23d are examples of a gas introduction portion, and the air discharge pipe 23e, the air discharge valve 23f, and the flow rate controller 23g are examples of a gas discharge portion.

[0117] The embodiments disclosed herein are to be considered in all respects as illustrative and non-restrictive. The embodiments described above may be omitted, replaced, and modified in various ways without departing from the appended claims and the gist thereof.

Claims

1. A substrate processing device, characterized in that: have: a substrate transfer chamber capable of switching between an atmospheric environment and an inert gas environment; and The bag body is disposed in the substrate transfer chamber, expands by introducing gas, and contracts by exhausting gas. The substrate processing apparatus further includes a circulation flow forming unit that circulates an inert gas within the substrate transfer chamber. The bag body expands due to the inert gas introduced into the circulation.

2. The substrate processing device according to claim 1, characterized in that: At least a portion of the bag body is fixed to the substrate transfer chamber.

3. The substrate processing device according to claim 2, characterized in that: The lower portion of the bag body is fixed to the bottom of the substrate transfer chamber.

4. The substrate processing device according to claim 3, characterized in that: A plate-shaped member is also provided on the upper portion of the bag body.

5. The substrate processing device according to claim 2, characterized in that: The upper portion of the bag body is fixed to the top of the substrate transfer chamber.

6. The substrate processing device according to claim 5, characterized in that: A plate-shaped member is also provided on the lower part of the bag body.

7. The substrate processing apparatus according to any one of claims 1 to 6, characterized in that: Also features: a gas introduction part for introducing the gas into the bag body; and A gas discharge portion discharges the gas from the bag body.

8. The substrate processing apparatus according to any one of claims 1 to 6, characterized in that: The bag body is formed by telescopic members.

9. The substrate processing apparatus according to any one of claims 1 to 6, characterized in that: The bag body is formed by a telescopic structure.

10. The substrate processing apparatus according to any one of claims 1 to 6, characterized in that: A pressure gauge is also provided, which is used to detect the pressure in the bag.

11. A substrate processing device, characterized in that: have: a substrate transfer chamber capable of switching between an atmospheric environment and an inert gas environment; and The bag body is disposed in the substrate transfer chamber, expands by introducing gas, and contracts by exhausting gas. The substrate processing apparatus further comprises an oxygen concentration meter for detecting the oxygen concentration in the substrate transfer chamber. The substrate processing device further comprises a control unit. The control unit contracts the bag body when the oxygen concentration in the substrate transfer chamber detected by the oxygen concentration meter is equal to or less than a management value.

12. A substrate processing device, characterized in that: have: a substrate transfer chamber capable of switching between an atmospheric environment and an inert gas environment; and The bag body is disposed in the substrate transfer chamber, expands by introducing gas, and contracts by exhausting gas. The substrate processing apparatus further includes a lifting unit that moves up and down within the substrate transfer chamber. At least a portion of the bag body is fixed to the lifting portion, As the lifting part ascends, gas is introduced into the bag body to expand the bag body, and as the lifting part descends, gas in the bag body is discharged to shrink the bag body.

13. A purging method comprising the following steps: introducing gas into a bag body disposed in the substrate transfer chamber and expanding by introducing gas and contracting by exhausting gas; and In a state where the bag body is expanded, an inert gas is introduced into the substrate transfer chamber to switch the substrate transfer chamber from an atmospheric environment to an inert gas environment. The purging method further includes the following steps: circulating an inert gas within the substrate transfer chamber, The bag body expands due to the inert gas introduced into the circulation.

14. A purging method comprising the following steps: introducing gas into a bag body disposed in the substrate transfer chamber and expanding by introducing gas and contracting by exhausting gas; and In a state where the bag body is expanded, an inert gas is introduced into the substrate transfer chamber to switch the substrate transfer chamber from an atmospheric environment to an inert gas environment. The purging method further comprises the following steps: detecting the oxygen concentration in the substrate transfer chamber; and When the detected oxygen concentration in the substrate transfer chamber is equal to or less than a management value, the bag body is contracted.

15. A purging method comprising the following steps: introducing gas into a bag body disposed in the substrate transfer chamber and expanding by introducing gas and contracting by exhausting gas; and In a state where the bag body is expanded, an inert gas is introduced into the substrate transfer chamber to switch the substrate transfer chamber from an atmospheric environment to an inert gas environment. The substrate transport chamber is further provided with a lifting unit, which is lifted and lowered in the substrate transport chamber. At least a portion of the bag body is fixed to the lifting portion, As the lifting part ascends, gas is introduced into the bag body to expand the bag body, and as the lifting part descends, gas in the bag body is discharged to shrink the bag body.

Citation Information

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