Semiconductor light emitting device

Abstract

A semiconductor light emitting device is provided, which allows for an increase in internal resistance. The semiconductor light emitting device according to an embodiment of the present disclosure includes: a light emitting element; a first accommodating member and a second accommodating member accommodating the light emitting element, at least one of which has a wiring structure electrically coupling the light emitting element to the outside; and a conductive joint portion that joins the first accommodating member and the second accommodating member and is coupled to the wiring structure.

Description

Technical Field

[0001] The present technology relates to a semiconductor light emitting device including, for example, a light emitting element such as a semiconductor laser element. Background Art

[0002] Light emitting devices each including a plurality of light emitting elements such as semiconductor laser elements are being developed. The semiconductor laser element has a portion of a semiconductor laser chip packaged by a lid to ensure reliability (for example, see Patent Document 1).

[0003] Reference List

[0004] Patent Literature

[0005] PTL 1: Japanese Unexamined Patent Application Publication No. H5-129711 Summary of the invention

[0006] Such a light emitting device is required to have improved internal resistance.

[0007] It is desirable to provide a semiconductor light emitting device that allows internal resistance to be increased.

[0008] A semiconductor light emitting device according to an embodiment of the present disclosure includes: a light emitting element; a first container member and a second container member, at least one of which has a wiring structure; and a conductive joint. The first container member and the second container member contain the light emitting element. The wiring structure electrically couples the light emitting element to the outside. The conductive joint joins the first container member and the second container member. The conductive joint is electrically coupled to the wiring structure.

[0009] In a semiconductor light emitting device according to an embodiment of the present disclosure, a conductive joint is electrically coupled to a wiring structure provided in at least one of a first container member and a second housing portion, thereby increasing a cross-sectional area of ​​wiring that electrically couples a light emitting element to the outside. The conductive joint joins the first container member and the second container member. The light emitting element is contained in the first container member and the second container member. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] [ Figure 1 ] Figure 1 is an exploded perspective view of an example of a configuration of a semiconductor light emitting device according to a first embodiment of the present disclosure.

[0011] [ Figure 2 ] Figure 2 It is shown Figure 1 A schematic plan view of an example of the configuration of a semiconductor light emitting device shown.

[0012] [ Figure 3 ] Figure 3 yes Figure 1An exploded perspective view of an example of a configuration of a receiving member is shown.

[0013] [ Figure 4A ] Figure 4A It is taken along line II Figure 1 A schematic cross-sectional view of a semiconductor light emitting device is shown.

[0014] [ Figure 4B ] Figure 4B It is taken along line II-II Figure 1 A schematic cross-sectional view of a semiconductor light emitting device is shown.

[0015] [ Figure 4C ] Figure 4C It is taken along line III-III Figure 1 A schematic cross-sectional view of a semiconductor light emitting device is shown.

[0016] [ Figure 5 ] Figure 5 It is shown that Figure 1 The illustrated semiconductor light emitting device is a schematic side view of an example of a schematic configuration of a light emitting apparatus.

[0017] [ Figure 6 ] Figure 6 yes Figure 5 An exploded perspective view of a schematic configuration of a light emitting device is shown.

[0018] [ Figure 7 ] Figure 7 It is used to describe semiconductor light-emitting devices and Figure 5 A perspective view showing the coupling between terminal portions of a lens holding member.

[0019] [ Figure 8 ] Figure 8 : is a plan schematic diagram showing an example of the configuration of a semiconductor light emitting device according to a second embodiment of the present disclosure.

[0020] [ Fig. 9 ] Fig. 9 yes Figure 8 An exploded perspective view of an example of a configuration of a receiving member is shown.

[0021] [ Fig.10 ] Fig.10 : is a plan schematic diagram showing an example of the configuration of a semiconductor light emitting device according to a third embodiment of the present disclosure.

[0022] [ Fig.11 ] Fig.11 yes Fig.10 An exploded perspective view of an example of a configuration of a receiving member is shown.

[0023] [ Fig. 12A ] Fig. 12A : is a plan schematic diagram showing an example of the configuration of a semiconductor light emitting device according to a fourth embodiment of the present disclosure.

[0024] [ Fig. 12B ] Fig. 12B It is shown Fig. 12A A schematic plan view of an example of a front side configuration of a cover is shown.

[0025] [ Fig. 12C ] Fig. 12C 12 is a schematic cross-sectional view showing an example of the configuration of the cover shown in FIG. 12 .

[0026] [ Fig.13 ] Fig.13 yes Fig. 12A An exploded perspective view of an example of a configuration of a receiving member is shown.

[0027] [ Fig.14A ] Fig.14A : is a plan schematic diagram showing an example of the configuration of a semiconductor light emitting device according to a fifth embodiment of the present disclosure.

[0028] [ Fig. 14B ] Fig. 14B It is shown Fig.14A A schematic cross-sectional view of an example of a cover configuration is shown.

[0029] [ Fig.15 ] Fig.15 yes Fig.14A An exploded perspective view of an example of a configuration of a receiving member is shown.

[0030] [ Fig.16 ] Fig.16 It is shown Fig.15 A schematic plan view showing an example of the shape of a metal pattern.

[0031] [ Fig.17 ] Fig.17 : is a plan schematic diagram showing an example of a configuration of a semiconductor light emitting device according to a sixth embodiment of the present disclosure.

[0032] [ Fig.18 ] Fig.18 yes Fig.17 An exploded perspective view of an example of a configuration of a receiving member is shown.

[0033] [ Fig.19 ] Fig.19 It is shown Fig.17 A diagram showing an example of the shape of a metal pattern.

[0034] [ Fig. 20 ] Fig. 20: is a plan schematic diagram showing an example of the configuration of a semiconductor light emitting device according to a seventh embodiment of the present disclosure.

[0035] [ Fig.21 ] Fig.21 : is a plan schematic diagram showing an example of the configuration of a semiconductor light emitting device according to an eighth embodiment of the present disclosure.

[0036] [ Fig. 22 ] Fig. 22 yes Fig.21 An exploded perspective view of an example of a configuration of a receiving member is shown.

[0037] [ Fig.23 ] Fig.23 : is a plan schematic diagram showing an example of a configuration of a semiconductor light emitting device according to a ninth embodiment of the present disclosure.

[0038] [ Fig.24 ] Fig.24 yes Fig.23 An exploded perspective view of an example of a configuration of a receiving member is shown.

[0039] [ Fig.25A ] Fig.25A It is taken along the VI-VI line Fig.23 A schematic cross-sectional view of a semiconductor light emitting device is shown.

[0040] [ Fig.25B ] Fig.25B It is taken along line VII-VII. Fig.23 A schematic cross-sectional view of a semiconductor light emitting device is shown.

[0041] [ Fig.25C ] Fig.25C It is taken along line VIII-VIII Fig.23 A schematic cross-sectional view of a semiconductor light emitting device is shown.

[0042] [ Fig.26 ] Fig.26 : is a plan schematic diagram showing another example of the configuration of the semiconductor light emitting device according to the ninth embodiment of the present disclosure.

[0043] [ Fig. 27 ] Fig. 27 yes Fig.26 A schematic cross-sectional view of a semiconductor light emitting device is shown.

[0044] [ Fig.28 ] Fig.28 : is a plan schematic diagram showing an example of a configuration of a semiconductor light emitting device according to a tenth embodiment of the present disclosure.

[0045] [ Fig.29 ] Fig.29yes Fig.28 A schematic cross-sectional view of a semiconductor light emitting device is shown.

[0046] [ Fig.30 ] Fig.30 yes Fig.28 An exploded perspective view of an example of a configuration of a receiving member is shown.

[0047] [ Fig.31 ] Fig.31 is a schematic cross-sectional view showing another example of the configuration of the semiconductor light emitting device according to the tenth embodiment of the present disclosure.

[0048] [ Fig.32 ] Fig.32 is a schematic cross-sectional view showing another example of the configuration of the semiconductor light emitting device according to the tenth embodiment of the present disclosure.

[0049] [ Fig.33 ] Fig.33 is an exploded perspective view of an example of a configuration of a light emitting device according to a modified example of the present disclosure.

[0050] [ Fig.34 ] Fig.34 It shows that the application Figure 1 Schematic diagram of an example of a configuration of a projection display of a light-emitting device shown in FIG. DETAILED DESCRIPTION

[0051] The embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. The following description is a specific example of the present disclosure, but the present disclosure is not limited to the following modes. In addition, the present disclosure is not limited to the arrangement, size, size ratio, etc. of each component shown in the drawings.

[0052] Note that the description is given in the following order.

[0053] 1. First Embodiment (Example of Using a Joining Member for an Accommodating Member and a Cover as a Conductive Path)

[0054] 1-1. Structure of semiconductor light-emitting device

[0055] 1-2. Structure of light-emitting device

[0056] 1-3. Operation and Effect

[0057] 2. Second Embodiment (Example of Separating the Metal Pattern on the Bonding Surface of the Accommodating Member into the Metal Pattern for the Electrode Leading-out Portion and the Bonding Metal Pattern)

[0058] 3. Third Embodiment (Example of Providing a Solder Resist Tape on a Boundary Between a Metal Pattern of an Electrode Leading-Out Portion and a Bonding Metal Pattern)

[0059] 4. Fourth Embodiment (Example in which an electrode lead portion is provided on the upper surface of the cover)

[0060] 5. Fifth Embodiment (Example of Providing a Depressed Part on the Cover Side)

[0061] 6. Sixth Embodiment (Example of arranging the light emitting element and the reflector on the same plane)

[0062] 7. Seventh Embodiment (Example of Electrically Coupling Metal Pattern for Electrode Leading Out and Bonding Metal Pattern by Using Solder Pattern on Cover Side)

[0063] 8. Eighth Embodiment (Example with Ground Pattern)

[0064] 9. Ninth Embodiment (Example of Light Emitting in Horizontal Direction)

[0065] 10. Tenth Embodiment (Example Using Vertical Resonator Surface Emitting Laser)

[0066] 11. Modified example (another example of display configuration)

[0067] 12. Application example (projection display example)

[0068] <1. First Embodiment>

[0069] Figure 1 is an exploded perspective view of an example of the configuration of the semiconductor light emitting device (semiconductor light emitting device 10A) according to the first embodiment of the present disclosure. Figure 2 Schematically shows Figure 1 An example of a planar configuration of a semiconductor light emitting device 10A is shown in . The semiconductor light emitting device 10A is a packaged surface mount device (surface mount device; SMD). The semiconductor light emitting device 10A includes a light emitting element 11, a containing member 14, and a cover 15. The containing member 14 includes a recessed portion 14C, and the light emitting element 11 is contained in the recessed portion 14C. The containing member 14 and the cover 15 are joined by a joining member 16. This seals the light emitting element 11. The containing member 14 corresponds to a specific example of a “first containing member” of the present disclosure, and the cover 15 corresponds to a specific example of a “second containing member” of the present disclosure.

[0070] (1-1. Configuration of semiconductor light emitting device)

[0071] In the semiconductor light emitting device 10A according to the present embodiment, for example, the light emitting element 11 is contained in the recessed portion 14C of the containing member 14 together with the base 12 and the reflector 13. The containing member 14 is bonded to the cover 15 so that the bonding member 16 is interposed therebetween, and the light emitting element 11, the base 12 and the reflector 13 are sealed together with the cover 15. The containing member 14 is provided with a wiring structure for electrically coupling the light emitting element 11 to the outside. The bonding member 16 is electrically coupled to the wiring structure. Together with the wiring structure, the bonding member 16 is included in a conductive path that electrically couples the light emitting element 11 to the outside.

[0072] The light emitting element 11 includes, for example, a semiconductor laser element such as an LD (laser diode). The light emitting element 11 includes, for example, a semiconductor material based on gallium nitride (GaN), and emits light in a blue wavelength range. A wavelength conversion member such as a fluorescent material may be provided on an optical path of light emitted from the light emitting element 11. The light emitting element 11 may include, for example, a semiconductor material based on gallium arsenide (GaAs). One of the anode and cathode of the light emitting element 11 (for example, the anode) is coupled to a wiring structure provided in a later-described accommodating member 14 through wiring bonding, and is, for example, led out from an electrode lead-out portion 14E2. For example, wiring W is used in wiring bonding. Wiring W includes, for example, gold (Au). For example, in the case of using the conductive base 12 described below, for example, one of the anode and cathode of the light emitting element 11 (for example, the cathode) is led out from the electrode lead-out portion 14E1 through a wiring structure provided in the accommodating member 14, without using wiring W.

[0073] The base 12 is used to mount the light emitting element 11. The base 12 is disposed between the light emitting element 11 and the bottom surface of the recessed portion 14C of the receiving member 14. The base 12 is, for example, a plate-shaped member. The position of the light emitting element 11 can be determined based on the thickness ( Figure 1 The size of the Z direction in the substrate 12 is adjusted. The substrate 12 includes, for example, an insulating material such as aluminum nitride (AlN), silicon (Si), silicon carbide (SiC), diamond, or beryllium oxide (BeO). In the case of using the substrate 12 including an insulating material, wiring is coupled from a metal pattern (not shown) on the substrate 12 to the metal pattern 143M1 or the metal pattern 141M1. This electrically couples the electrode lead portion 14E1 and the light emitting element 11, for example.

[0074] The base 12 may include, for example, a conductive material such as copper tungsten (Cu-W), copper molybdenum (Cu-Mo), copper diamond and graphite. The use of the conductive base 12 makes it possible to conduct one of the electrodes of the light-emitting element 11 (for example, the cathode) to the wiring structure inside the accommodating member 14 through the base 12. For example, compared with the case where both the anode and cathode of the light-emitting element 11 are coupled to the electrode lead-out portion 14E by using the wiring W, the number of wirings W is reduced. Therefore, the size of the semiconductor light-emitting device 10A can be reduced.

[0075] The light emitting element 11 is bonded to the base 12, for example, by AuSn (gold tin) eutectic bonding, and the base 12 is bonded to the bottom surface of the recessed portion 14C of the receiving member 14, for example, by AuSn eutectic bonding. The base 12 can also be bonded to the bottom surface of the recessed portion 14C of the receiving member 14, for example, by silver (Ag) paste, sintered gold (Au), sintered silver (Ag), etc.

[0076] The reflector 13 is used to reflect the light emitted from the light emitting element 11. The light emitted from the light emitting element 11 is reflected by the reflector 13 and emitted from the cover 15 side. The reflector 13 is arranged in the recessed portion 14C of the accommodating member 14 together with the light emitting element 11 mounted on the base 12. The recessed portion 14C is provided with a step inside, for example. The reflector 13 is arranged at a position lower than the light emitting element 11.

[0077] The reflector 13 has, for example, an inclined surface. The inclined surface is arranged opposite to the light emitting surface of the light emitting element 11. The inclined surface of the reflector 13 is inclined, for example, 45° from the bottom surface of the accommodating member 14. This allows the light reflected by the inclined surface of the reflector 13 to be extracted in a direction perpendicular to the bottom surface of the accommodating member 14. Adjusting the angle of the inclined surface of the reflector 13 also allows the light extraction direction to be changed. The reflector 13 includes, for example, glass, synthetic quartz, silicon, sapphire, copper, aluminum, etc. The inclined surface of the reflector 13 can be provided with, for example, a reflective film, such as a metal film or a multilayer dielectric film. The reflectivity of the reflective film to the light emitted from the light emitting element 11 is, for example, 90% or more. The reflectivity of the reflective film is preferably 99% or more.

[0078] Figure 3 yes Figure 1 An exploded perspective view of an example of a configuration of the receiving member 14 is shown. FIG. 4A to FIG. 4C Schematically shows the Figure 2The cross-sectional configuration of the containing member 14 cut by the II line, the II-II line and the III-III line shown. The containing member 14 contains the light emitting element 11 and the reflector 13 mounted on the base 12, and seals the light emitting element 11 and the reflector 13 together with the cover 15. In other words, the recessed portion 14C of the containing member 14 and the cover 15 form a containing space with airtightness. The recessed portion 14C has a planar shape of, for example, a rectangle. The containing member 14 includes, for example, glass or ceramic. The containing member 14 includes, for example, a sintered body, such as aluminum nitride (AlN), aluminum oxide (alumina) or silicon carbide (SiC).

[0079] The containing member 14 includes a first layer 141 and a second layer 142. The first layer 141 is included in the bottom surface of the recessed portion 14C. The second layer 142 is included in the side surface of the recessed portion 14C. The second layer 142 includes a bonding layer 144 and an intermediate layer 143. The bonding layer 144 is bonded to the cover. The intermediate layer 143 is disposed between the first layer 141 and the bonding layer 144. Metal patterns 141M, 143M and 144M are respectively formed on the first layer 141 and the second layer 142 (specifically, the intermediate layer 143 and the bonding layer 144) and are appropriately electrically coupled. Each of the metal patterns 141M, 143M and 144M includes, for example, gold (Au) or the like. The first layer 141 corresponds to a specific example of the "first layer" of the present disclosure, and the second layer 142 corresponds to a specific example of the "second layer" of the present disclosure.

[0080] As described above, the first layer 141 is included in the bottom surface of the recessed portion 14C. The first layer 141 is, for example, a plate-like member having a rectangular planar shape. The first layer 141 has an upper surface 141S1 and a lower surface 141S2 that are opposite to each other. The upper surface 141S1 is included in a portion of the bottom surface of the recessed portion 14C. The lower surface 141S2 is included in the rear surface 14S2 of the accommodating member 14. The upper surface 141S1 is provided with a metal pattern 141M1. The metal pattern 141M1 is, for example, used to mount the reflector 13. The metal pattern 141M1 is arranged to partially correspond to the opening 143H in a plane (XY plane) view, for example. The opening 143H is arranged in the intermediate layer 143 described below. Specifically, the metal pattern 141M1 is arranged to be exposed in the opening 143H. This allows the reflector 13 to dissipate heat effectively. In addition, it can be conveniently welded to the reflector 13.

[0081] The lower surface 141S2 of the first layer 141 is provided with a metal pattern 141M2 for mounting on the substrate 31 described below. The metal pattern 141M2 also serves as a heat dissipation member, and also allows the heat generated by the light emitting element 11 to be effectively dissipated to the substrate 31. In other words, providing the metal pattern 141M2 on the rear surface 14S2 of the receiving member 14 makes it possible to electrically and thermally couple the semiconductor light emitting device 10A and the substrate 31.

[0082] As described above, the intermediate layer 143 is included in a portion of the side surface of the recessed portion 14C and is disposed between the first layer 141 and the bonding layer 144. The intermediate layer 143 is, for example, a plate-like member having a rectangular planar shape. The intermediate layer 143 has an upper surface 143S1 and a lower surface 143S2 that are opposite to each other. The upper surface 143S1 is included in the bottom surface of the recessed portion 14C together with the upper surface 141S1 of the first layer 141. The intermediate layer 143 is provided with an opening 143H in which the reflector 13 is disposed. The metal pattern 141M1 disposed on the upper surface of the first layer 141 is exposed in the opening 143H. The reflector 13 is mounted through the metal pattern 141M1.

[0083] The upper surface 143S1 of the intermediate layer 143 is provided with a metal pattern 143M1 and a metal pattern 143M2 which are independent of each other. The metal pattern 143M1 is used, for example, to mount the base 12. The metal pattern 143M1 is patterned to overlap at least partially with at least any one of the metal pattern 141M1 disposed on the first layer 141 or the metal pattern 144M1 disposed on the bonding layer 144 described below in a plan view. In addition, the metal pattern 143M1 is arranged to be partially exposed in the opening 144H disposed in the bonding layer 144, and the base 12 is mounted. This allows the base 12 to dissipate heat efficiently. In addition, it can be easily soldered to the base 12. For example, in a plan view, the metal pattern 143M2 is patterned to overlap at least partially with the metal pattern 144M2 disposed on the bonding layer 144.

[0084] The intermediate layer 143 is also provided with a through hole V1 that penetrates the intermediate layer 143 in the Z-axis direction. The through hole V1 is provided on the first layer 141 at a position overlapping with the metal pattern 143M1 and the metal pattern 141M1, and couples the metal pattern 141M1 and the metal pattern 143M1. The provision of the through hole V1 facilitates the electroplating process in the gold plating process described below. In addition, in the case where the base 12 uses an insulating material, the provision of the through hole V1 enables, for example, the electrode lead portion 14E1 and the light emitting element 11 to be electrically coupled by coupling the wiring from the metal pattern (not shown) on the base 12 to the metal pattern 141M1.

[0085] As described above, the bonding layer 144 is included in a part of the side surface of the recessed portion 14C and is bonded to the cover 15. The bonding layer 144 is a plate-like member having, for example, a rectangular planar shape. The bonding layer 144 has an upper surface 144S1 and a lower surface 144S2 that are opposite to each other. The upper surface 144S1 is included in the bonding surface 14S1 of the accommodating member 14 and the cover 15. The bonding layer 144 is provided with an opening 144H (wherein the base 12 is provided). The metal pattern 143M1 and the metal pattern 143M2 portions provided on the upper surface of the intermediate layer 143 are exposed in the opening 144H. The base 12 is mounted by the metal pattern 143M1. The metal pattern 143M2 is electrically coupled to one of the electrodes (for example, an anode) of the light-emitting element 11 mounted on the base 12 through the wiring W. In addition, the opening 144H includes an opening 143H provided in the intermediate layer 143. In other words, the recessed portion 14C includes an opening 143H and an opening 144H. This causes the bottom surface of the recessed portion 14C to have a step.

[0086] The upper surface 144S1 of the bonding layer 144 is provided with a metal pattern 144M1, which surrounds the opening 144H along the edge and partially protrudes to the outside of the edge. This portion along the edge (metal pattern 14MC) is used to bond the cover 15 (specifically, the solder pattern 151M described below). The protruding portion (metal pattern 14ME) is exposed from the cover 15. The protruding portion (metal pattern 14ME) is included in the electrode lead-out portion 14E1 that electrically couples the light emitting element 11 to the outside. In other words, the metal pattern 144M1 includes the metal pattern 14MC and the metal pattern 14ME. The upper surface 144S1 of the bonding layer 144 also has a metal pattern 144M2 that is independent of the metal pattern 144M1, for example, next to the protruding portion (metal pattern 14ME) of the metal pattern 144M1. The metal pattern 144M2 is exposed from the cover 15 together with the metal pattern 14ME. The metal pattern 144M2 is included in the electrode lead-out portion 14E1 that electrically couples the light emitting element 11 to the outside. The electrode lead-out portion 14E1 and the electrode lead-out portion 14E2 are portions where electrodes are led out from the anode and cathode of the light emitting element 11 .

[0087] The bonding layer 144 is also provided with, for example, three through holes V2 and one through hole V3 that penetrate the bonding layer 144 in the Z-axis direction. The three through holes V2 are provided at positions overlapping with the metal pattern 144M1 and the metal pattern 143M1 on the intermediate layer 143. Specifically, two through holes V2 of the three through holes V2 are provided directly below the metal pattern 14MC, and one through hole V2 is provided directly below the metal pattern 14ME. In other words, the metal pattern 14MC is coupled to the metal pattern 143M1 through two through holes V2, and the metal pattern 14ME is coupled to the metal pattern 143M1 through one through hole V2. One through hole V3 is provided at a position on the intermediate layer 143 that overlaps with the metal pattern 144M2 and the metal pattern 143M2, and couples the metal pattern 143M2 and the metal pattern 144M2.

[0088] As described above, the anode and cathode of the light emitting element 11 are led out from the electrode lead-out portion 14E1 and the electrode lead-out portion 14E2 exposed from the cover 15 through the metal patterns 141M, 143M, and 144M and the through holes V1, V2, and V3 provided on the first layer 141 and the second layer 142. Specifically, for example, the cathode of the light emitting element 11 is led out from the electrode lead-out portion 14E1 through the metal pattern 141M1, the through hole V1, the metal pattern 143M1, and one through hole V2, and the metal pattern 141M1, the through hole V1, the metal pattern 143M1, two through holes V2, and the metal pattern 14MC. The anode of the light emitting element 11 is led out from the electrode lead-out portion 14E2 through, for example, the wiring W, the metal pattern 143M2, and the through hole V3.

[0089] The light emitted from the light emitting element 11 is led out from the cover 15. The cover 15 is, for example, a plate-like member having a rectangular planar shape. The cover 15 has an upper surface 15S1 and a lower surface 15S2 that are opposite to each other. The cover 15 covers at least the recessed portion 14C of the receiving member 14. The lower surface 15S2 of the cover 15 is coated with a solder pattern 151M, with an adhesive therebetween. The adhesive layer includes chromium (Cr), titanium (Ti), gold (Au), etc. For example, the solder pattern 151M has a planar shape substantially the same as the planar shape of the bonding metal pattern 14MC portion formed on the bonding surface 14S1 of the receiving member 14. Specifically, the solder pattern 151M has a frame shape surrounding the recessed portion 14C. The width of the solder pattern 151M is substantially the same as the width of the bonding metal pattern 144MC formed on the upper surface of the receiving member 14, or the width of the solder pattern 151M is less than or equal to the width of the bonding metal pattern 144MC. The solder pattern 151M is formed by using, for example, a SnAgCu (tin-silver-copper)-based solder. AuSn (gold-tin)-based solder, Sn (tin)-based solder, In (indium)-based solder, etc. can be used for the solder pattern 151M. The use of such welding, etc., hermetically seals (hermetically seals) the light-emitting element 11, etc. between the accommodating member 14 and the cover 15. The cover 15 includes a material having light-transmitting properties in a portion covering at least the recessed portion 14C. Specifically, the cover 15 includes, for example, glass, etc.

[0090] The joining member 16 is used to join the containing member 14 and the cover 15. The joining member 16 includes, for example, a metal pattern 14MC and a solder pattern 151M. The metal pattern 14MC is arranged on the joining surface 14S1 of the containing member 14. The solder pattern 151M is arranged on the lower surface 15S2 of the cover 15. The metal pattern 14MC is a part of the metal pattern 144M1. In addition to the metal pattern 14MC, the metal pattern 144M1 also includes the metal pattern 14ME included in the electrode lead-out portion 14E1. In other words, the metal pattern 14MC and the metal pattern 14ME are formed in the same metal pattern (metal pattern 144M1) and are electrically coupled to each other. In addition, the metal pattern 14MC is coupled to the metal pattern 143M1 through two through holes V2. The metal pattern 143M1 is electrically coupled to the cathode of the light-emitting element 11, for example, through the base 12. In other words, the metal pattern 14MC is included in a part of the conductive path between the cathode of the light-emitting element 11 and the electrode lead-out portion 14E1. This increases the cross-sectional area of ​​the conductive path that electrically couples the light emitting element 11 and the outside (eg, the electrode lead-out portion 14E1 ), and reduces the internal resistance.

[0091] For example, the semiconductor light emitting device 10A is manufactured as follows. Specifically, the metal pattern 141M and the metal pattern 141M2 are formed on the upper surface 141S1 and the lower surface 141S2 of the first layer 141. Next, the second layer 142 is formed. First, the opening 143H included in the recess 14C and the via (not shown) for the through hole V1 are formed in the intermediate layer 143. Subsequently, the through hole V1 is formed by filling the via with, for example, tungsten paste, copper (Cu) or silver (Ag), and then the metal pattern 143M1 and the metal pattern 143M2 are formed on the upper surface 143S1 of the intermediate layer 143. Next, the opening 144H included in the recess 14C and the vias (not shown) for the through holes V2 and V3 are formed in the bonding layer 144. Subsequently, through holes V2 and V3 are formed by filling the vias with, for example, tungsten paste, copper (Cu) or silver (Ag), and then metal patterns 144M1 and 144M2 are formed on the upper surface 144S1 of the bonding layer 144. After that, sintering is performed, the exposed portion is gold-plated, and then singulation is performed to form the accommodating member 14. Next, after the base 12, the light-emitting element 11 and the reflector 13 are arranged in the recessed portion 14C of the accommodating member 14, for example, the anode of the light-emitting element 11 is coupled to the metal pattern 143M2 by wiring bonding. For example, a gold wire (wiring W) is used in the wiring bonding. In addition, in the case of using an insulating material for the base 12, the wiring is coupled from the metal pattern (not shown) on the base 12 to the metal pattern 143M1 or the metal pattern 141M1. This, for example, electrically couples the electrode lead-out portion 14E1 to the light-emitting element 11. Finally, the cover 15 is bonded to the accommodating member 14. This hermetically seals the light emitting element 11 to complete the semiconductor light emitting device 10A.

[0092] In the manufacturing steps of the semiconductor light emitting device 10A described above, the melting temperature of the bonding agent is important in the three steps of installing the reflector 13, installing the light emitting element 11 and the base 12, and bonding the containing member 14 and the cover 15. For example, the reflector 13 is preferably bonded by using AuSn solder or sintered Ag paste as a bonding agent. The light emitting element 11 and the base 12 are preferably bonded by using AuSn solder as a bonding agent. The containing member and the cover 15 are preferably bonded by using SnAgCu solder as a bonding agent. The above combination prevents the bonding agent from remelting in each step, so that the mounting accuracy can be ensured. It should be noted that in the case of using AuSn solder to install the reflector 13, for example, the AuSn solder melted when the reflector 13 is installed may absorb, for example, a gold plate applied to a metal pattern exposed in the recessed portion 14C of the containing member 14, thereby increasing the melting temperature. By appropriately setting the melting temperature of the AuSn solder to install the light emitting element 11 and the base 12, such remelting can be prevented.

[0093] In the semiconductor light emitting device 10A, light is extracted as follows, for example: Light emitted from the light emitting element 11 (for example, light in a blue wavelength range) is reflected by the reflector 13 , transmitted by the cover 15 , and extracted from the semiconductor light emitting device 10A.

[0094] (1-2. Structure of light emitting device)

[0095] Figure 5 Shown include Figure 1 Schematic configuration of a side surface of a light emitting device (light emitting device 1 ) of a semiconductor light emitting apparatus 10A shown. Figure 6 yes Figure 5 1 is an exploded perspective view of the light emitting device 1. The light emitting device 1 includes a semiconductor light emitting device 10A, a substrate 31, a lens holding member 32, and an array lens 33. The array lens 33 includes a lens 331 corresponding to each semiconductor light emitting device 10A.

[0096] The substrate 31 is a member for placing the semiconductor light emitting device 10A. The substrate 31 is, for example, a flat plate-shaped member. The substrate 31 has a front surface 31A and a rear surface 31B opposite to each other. The front surface 31A is provided with a plurality of semiconductor light emitting devices 10A, and the rear surface 31B is, for example, thermally coupled to a heat sink or the like (not shown).

[0097] The substrate 31 includes, for example, a ceramic material, a metal material, etc. The substrate 31 including the metal material can increase heat dissipation. Examples of metal materials include iron (Fe), iron alloys, copper (Cu), aluminum (Al), copper alloys, etc. Examples of copper alloys include copper tungsten (CuW), etc. Examples of ceramic materials include aluminum nitride (AlN), etc. The substrate 31 may be provided with a coolant channel.

[0098] The substrate 31 may be provided with a recessed portion for placing the semiconductor light emitting device 10A. Placing the semiconductor light emitting device 10A in the recessed portion of the substrate 31 can protect the semiconductor light emitting device 10A.

[0099] The plurality of semiconductor light emitting devices 10A are placed on the front surface 31A of the substrate 31. The plurality of semiconductor light emitting devices 10A are arranged on the front surface 31A of the substrate 31 in a matrix shape, for example ( Figure 6 The semiconductor light emitting devices 10A may be arranged in a matrix in the X direction and the Y direction. For example, a portion of the semiconductor light emitting devices 10A arranged in a matrix may be missing. The missing portion of the semiconductor light emitting device 10A is for the purpose of removing defective products or reducing the power density of a portion of the surface, for example. The semiconductor light emitting devices 10A may be arranged in another form such as a substantially hexagonal or houndstooth shape, for example.

[0100] For example, the spacing between the plurality of semiconductor light emitting devices 10A arranged in a matrix on the front surface 31A of the substrate 31 is smaller in the θ-parallel direction than in the θ-vertical direction. The FFP (far field pattern) half-value width in the θ-parallel direction is narrower than the FFP half-value width in the θ-vertical direction. Therefore, the spacing between the semiconductor light emitting devices 10A in the θ-parallel direction can be reduced. This makes it possible to increase the light density. The plurality of semiconductor light emitting devices 10A can be arranged in a line.

[0101] The lens holding member 32 provided between the substrate 31 and the array lens 33 has, for example, a frame shape surrounding the plurality of semiconductor light emitting devices 10A ( Figure 6 ). In other words, a plurality of semiconductor light emitting devices 10A are arranged inside a frame-shaped lens holding member 32. The planar shape of the lens holding member 32 is, for example, a quadrilateral. The lens holding member 32 includes, for example, a holding portion 321 having a quadrilateral frame shape and an expansion portion 322 that expands inside and outside the holding portion 321. The expansion portion 322 is, for example, arranged on two opposite sides of the quadrilateral holding portion 321. The lens holding member 32 does not have to be arranged on the entire periphery of the substrate 31, but may be, for example, arranged on three side surfaces of the quadrilateral substrate 31. Alternatively, the lens holding member 32 may be arranged on two opposite sides of the quadrilateral substrate 31.

[0102] The lens holding member 32 is fixed to the substrate 31 by using, for example, screws or the like (not shown). The method of fixing the lens holding member 32 to the substrate 31 may be any method. For example, the lens holding member 32 may be fixed to the substrate 31 using an adhesive. The adhesive includes, for example, a resin material. Alternatively, the lens holding member 32 and the substrate 31 may be molded together by using an insert molding process or the like.

[0103] The thickness of the holding portion 321 ( Figure 6The dimension in the Z direction in the image is, for example, greater than the thickness of the extension portion 322. The retaining portion 321 is in contact with the substrate 31 and the array lens 33. Therefore, the distance between each semiconductor light emitting device 10A and the lens 331 is adjusted according to the thickness of the retaining portion 321. The thickness of the retaining portion 321 is preferably large enough to maintain space between the cover 15 and the array lens 33 and between the substrate 31 and the array lens 33. These spaces are large enough to allow gas to flow. The size of the space large enough to allow gas flow is, for example, about 0.01mm. This is a processing tolerance. Alternatively, the size of the space large enough to allow gas flow is about 0.5mm. This is a tolerance in resin molding. In the case where the cover 15 and the array lens 33 are too close to each other, desorbates caused by an adhesive or the like stay between them. In the case where the desorbates react with light and are adsorbed on the cover 15 or the array lens 33, the optical characteristics are reduced. Providing a space large enough to allow gas to flow between the cover 15 and the array lens 33 makes it possible to suppress such a reduction in optical characteristics. The holding portion 321 has a thickness of, for example, about 1 mm to 30 mm. For example, the thickness of the holding portion 321 may be adjusted according to the focal length of the lens 331, the optical path length of the semiconductor light emitting device 10A, etc. The holding portion 321 includes, for example, a resin material.

[0104] The extension portion 322 is provided with a terminal portion 322E, for example. The terminal portion 322E is used to electrically couple the semiconductor light emitting device 10A (light emitting element 11) to the outside, for example, through the wiring WA. A plurality of terminal portions 322E are provided from the inside to the outside of the extension portion 322. The terminal portion 322E includes, for example, a conductive metal material such as aluminum (Al). The portion of the extension portion 322 other than the terminal portion 322E includes, for example, the same resin material as the retaining portion 321. The extension portion 322 and the retaining portion 321 may include different resin materials.

[0105] The holding portion 321 and the extension portion 322 can be fixed to the substrate 31, respectively. In addition, in the case of the holding portion 321 and the extension portion 322, the holding portion 321 can be fixed on the extension portion 322. For example, the holding portion 321 includes resin or metal. The extension portion 322 and the terminal portion 322E both include a PCB (printed circuit board). This allows the holding portion 321 to be adhered to the substrate 31 or the extension portion 322 by using a UV adhesive or solder. In addition, the array lens 33 and the holding portion 321 can be integrally formed by using an insert molding method. The lens holding member 32 can include metal materials such as aluminum (Al), SUS (stainless steel for steel), iron (Fe) and copper (Cu). Alternatively, the lens holding member 32 can include a ceramic material, etc. The shape of the lens holding member 32 can be formed by, for example, cutting or by die casting, sintering, etc. The lens holding member 32 including the terminal portion 322E preferably includes, for example, one component that is integrated by integral molding. This makes it possible to suppress costs.

[0106] The array lens 33 is opposite to the substrate 31 so that a plurality of semiconductor light emitting devices 10A are interposed therebetween. The array lens 33 includes, for example, an array portion 33A in the middle portion and a frame portion 33F surrounding the array portion 33A. In the array portion 33A, a plurality of lenses 331 are arranged at positions opposite to the respective semiconductor light emitting devices 10A. In a plan view, each lens 331 is, for example, arranged at a position overlapping with the light emitting element 11 and the reflector 13. The lens 331 includes, for example, a convex lens. The lens 331 may include a plano-convex lens, a biconvex lens, a meniscus lens, etc. The light transmitted by the cover 15 of each semiconductor light emitting device 10A is collimated by passing through the lens 331. The array lens 33 may have a different configuration between the lower surface (for example, the surface opposite to the substrate 31) side and the upper surface side. For example, one surface side of the array lens 33 may have a FAC (fast axis collimator) function, while the other surface side may have a SAC (slow axis collimator) function. Then, the array lens 33 has, for example, biconvex lenses arranged in a direction in which the biconvex lenses are orthogonal to each other. The array lens 33 includes, for example, a lens having a biconvex shape integrally bonded together on a flat surface or two plano-convex lenses. Optionally, the array lens 33 includes two plano-convex lenses, whose flat surface sides are aligned to point to the semiconductor light emitting device 10A side, and are held and integrated by the frame portion 33F of the array lens 33.

[0107] The frame portion 33F surrounding the array portion 33A has a planar shape such as a quadrilateral. The frame portion 33F is fixed to the holding portion 321 of the lens holding member 32, for example, by an adhesive not shown in the figure. A light-curable resin such as a UV (ultraviolet) curable resin can be used as the adhesive. The shrinkage of the resin caused by light curing causes a positional deviation between the array lens 33 and the lens holding member 32. Therefore, it is preferred to use a resin material such as a curing shrinkage of about a few percent or less. It is more preferred to use a resin material such as a curing shrinkage of 1% or less. The array lens 33 can be fixed to the lens holding member 32, for example, by screws, etc. Alternatively, the array lens 33 and the lens holding member 32 can be molded together by an insert molding process, etc. As described above, a space large enough to allow gas flow is provided between the array portion 33A and the substrate 31 and between the array portion 33A and the semiconductor light emitting device 10A. The array lens 33 includes, for example, borosilicate glass, etc.

[0108] Figure 7 Shows Figure 1The semiconductor light emitting device 10A shown in the figure and the terminal portion 322E of the lens holding member 32. The electrode lead portion 14E1 and the electrode lead portion 14E2 provided on the upper surface of each of the plurality of semiconductor light emitting devices 10A are coupled to each other, for example, by wiring (wiring WA). The electrode lead portion 14E2 of the semiconductor light emitting device 10A arranged at a position closest to the terminal portion 322E of the lens holding member 32 is coupled to the terminal portion 322E by wiring WA. This makes it possible to couple the outside of the semiconductor light emitting device 10A and the light emitting element 11. It should be noted that Figure 7 The cover 15 is omitted.

[0109] In addition, the metal pattern 141M2 disposed on the rear surface of the adjacent semiconductor light emitting device 10A (the rear surface 14S2 of the receiving member 14) can be continuous, for example, with silver paste interposed therebetween. This thermally couples the metal patterns 141M2 of the adjacent semiconductor light emitting devices 10A and widens the heat dissipation path.

[0110] In the light emitting device 1, light is extracted as follows, for example. Light extracted from each semiconductor light emitting device 10A placed on the substrate 31 passes through a lens 331 at a position corresponding to the semiconductor light emitting device 10A, for example, to collimate the light. Therefore, a plurality of lights passing through the respective lenses 331 travel in parallel with each other and are extracted from the light emitting device 1.

[0111] (1-3. Operation and Effect)

[0112] In the semiconductor light emitting device 10A, the bonding member 16 (e.g., the metal pattern 14MC) that bonds the containing member 14 and the cover 15 is used as a conductive path that electrically couples the light emitting element 11 and the electrode of the electrode lead-out portion 14E. This increases the cross-sectional area of ​​the wiring that electrically couples the light emitting element 11 to the outside, so that the internal resistance can be reduced. These working modes and effects are described below.

[0113] Driving a light-emitting element including a semiconductor laser element causes siloxane in the atmosphere to react with light near the light-emitting point, and the reactant tends to be deposited on the end face of the light-emitting element. The reactant causes a change in the reflectivity of the end face. This may lead to a decrease in optical properties and damage the light-emitting element. In particular, a blue semiconductor laser element that emits a short wavelength of, for example, 500 nm or less is prone to defects caused by the siloxane in the atmosphere. Therefore, the occurrence of the defect caused by the siloxane in the atmosphere can be suppressed by hermetically sealing the semiconductor laser element, etc.

[0114] Incidentally, the components for hermetically sealing the semiconductor laser element included in the body of the SMD package include glass or ceramic. A metallization pattern for electrically coupling the anode and cathode of the semiconductor laser element to the external electrode is formed on the body of the package. However, due to the limitations of the manufacturing method, it is difficult to embed and burn the wiring terminals or form a metallization pattern with a thickness of 1 mm or less or hundreds of μm, for example. This increases the resistance (internal resistance) and increases Joule heat and loss, resulting in a decrease in power efficiency and a decrease in the performance of the semiconductor laser element.

[0115] In contrast, in the present embodiment, in the semiconductor light-emitting device 10A, the wiring structure provided in the containing member 14 and the metal pattern 14MC provided on the bonding surface 14S1 of the containing member 14 are electrically coupled and used as a conductive path (the path electrically couples the electrode of the light-emitting element 11 and the electrode lead-out portion 14E).

[0116] For example, in the semiconductor light emitting device 10A, the metal pattern 144M1 is disposed on the bonding surface 14S1 of the containing member 14 (specifically, the upper surface 144S1 of the bonding layer 144). The metal pattern 144M1 includes a metal pattern 14MC and a metal pattern 14ME. The metal pattern 14MC is used to bond the cover 15. The metal pattern 14ME is included in the electrode lead-out portion 14E1. In addition, the metal pattern 144M1 and the wiring structure (e.g., the metal pattern 143M1) in the containing member 14 are electrically coupled through the through hole V2. This allows the metal pattern 14MC to be used as a conductive path between the light emitting element 11 and the outside. The metal pattern 14MC is used to bond the cover 15. Specifically, for example, there are two conductive paths between the cathode of the light emitting element 11 and the external electrode (e.g., the electrode lead portion 14E1): a conductive path between the metal pattern 143M1 included in the electrode lead portion 14E1 and the metal pattern 14ME through the through hole V2; and a conductive path between the metal pattern 143M1 and the metal pattern 14MC through two through holes V2. This reduces the resistance on the cathode side.

[0117] As described above, in the present embodiment, the bonding member 16 bonding the housing member 14 and the cover 15 is electrically coupled to the wiring structure formed in the housing member 14 to serve as a conductive path. This increases the cross-sectional area of ​​the wiring that electrically couples the light emitting element 11 to the outside. This allows the internal resistance to be reduced.

[0118] In addition, in the present embodiment, the electrode lead-out portion 14E is provided on the bonding surface 14S1 of the receiving member 14. For example, by making the metal pattern 141M2 provided on the rear surface (rear surface 14S2 of the receiving member 14) of the adjacent semiconductor light emitting device 10A continuous (for example, with silver paste inserted therebetween), it is possible to thermally couple the metal pattern 141M2 of the adjacent semiconductor light emitting device 10A. This widens the heat dissipation path on the back surface of the semiconductor light emitting device 10A, and makes it possible to increase the heat dissipation characteristics.

[0119] The second to tenth embodiments, modification examples, and application examples are described below. However, the following description denotes the same components as those of the first embodiment described above with the same reference numerals, and the description thereof is appropriately omitted.

[0120] <2. Second Embodiment>

[0121] Figure 8 An example of a planar configuration of a semiconductor light emitting device (semiconductor light emitting device 10B) according to the second embodiment of the present disclosure is schematically shown. Fig. 9 yes Figure 8 An exploded perspective view showing an example of the configuration of the accommodating member 14 is shown. The semiconductor light emitting device 10B according to the present embodiment is different from the first embodiment described above in that the metal pattern 14MC and the metal pattern 14ME provided on the bonding surface 14S1 of the accommodating member 14 are separately formed.

[0122] Note that in the present embodiment, the metal pattern 143M1 on the intermediate layer 143 is formed to surround the opening 143H. This electrically couples the metal pattern 143M1 and the metal pattern 141M1A included in the metal pattern 14MC through four vias V2. The metal pattern 143M1 and the metal pattern 14ME are electrically coupled through one via V2. This electrically couples the metal pattern 14MC and the metal pattern 14ME through the via V2 and the metal pattern 143M1.

[0123] In this way, the metal pattern 14MC and the metal pattern 14ME are independently formed. In addition to the effect in the first embodiment described above, this has the effect that the solder pattern 151M provided on the cover 15 can be prevented from flowing to the electrode lead-out portion 14E1.

[0124] <3. Third embodiment>

[0125] Fig.10 An example of a planar configuration of a semiconductor light emitting device (semiconductor light emitting device 10C) according to a third embodiment of the present disclosure is schematically shown. Fig.11 yes Fig.1014 is an exploded perspective view of an example of the configuration of the receiving member 14 shown. The semiconductor light emitting device 10C according to the present embodiment is different from the first embodiment described above in that a solder resist tape 17 is formed on the boundary between the metal pattern 14MC used as the bonding member 16 of the metal pattern 144M1 provided on the bonding surface 14S1 of the receiving member 14 and the metal pattern 14ME used as the electrode lead-out portion 14E1. The solder resist tape 17 is, for example, a film of a dielectric material covering the surface of the metal pattern 144M1. Examples of dielectric materials include aluminum nitride (AlN), aluminum oxide (Al2O3), silicon oxide (SiO2), silicon nitride (SiN), and the like.

[0126] In this way, the solder resist tape 17 is provided on the boundary between the metal pattern 14MC and the metal pattern 14ME. In addition to the effect in the above-described first embodiment, this has an effect of preventing the solder pattern 151M provided on the cover 15 from flowing to the electrode lead-out portion 14E1.

[0127] <4. Fourth embodiment>

[0128] Fig. 12A An example of a planar configuration of a semiconductor light emitting device (semiconductor light emitting device 10D) according to a fourth embodiment of the present disclosure is schematically shown. Fig. 12B It is viewed from the upper surface 15S1 side. Fig. 12A A schematic plan view of the cover 15 is shown. Fig. 12C Schematically shows the Fig. 12A The semiconductor light emitting device 10D according to the present embodiment is different from the first embodiment in that the electrode lead-out portions 14E1 and 14E2 provided on the surface of the accommodating member 14 in the first embodiment are provided on the upper surface 15S1 of the cover 15 .

[0129] The upper surface 15S1 of the cover 15 is provided with metal patterns 151M2 included in the electrode lead-out portion 15E. The respective metal patterns 151M2 are independently provided at three of the four corners of the cover 15 having, for example, a rectangular planar shape. The three metal patterns 151M2 each have, for example, a rectangular shape. Two of the three metal patterns 151M2 are, for example, electrode lead-out portions 15E1 for cathodes. One of the three metal patterns 151M2 is, for example, an electrode lead-out portion 15E2 for anodes.

[0130] The lower surface 15S2 of the cover 15 is provided with a solder pattern 151M1A and a solder pattern 151M1B. The solder pattern 151M1A has a planar shape substantially the same as the bonding metal pattern 14MC portion formed on the bonding surface 14S1 of the accommodating member 14. The solder pattern 151M1B is provided inside the solder pattern 151M1A and has, for example, a circular shape. The solder pattern 151M1B is provided at a position corresponding to, for example, an electrode lead-out portion 15E2 of an anode. The electrode lead-out portion 15E2 for an anode is provided on the upper surface 15S1 of the cover 15.

[0131] The cover 15 is also provided with two through holes V4 and one through hole V5 penetrating the cover 15 in the Z-axis direction. The two through holes V4 couple, for example, the electrode lead-out portion 15E1 for cathode and the solder pattern 151M1A. The one through hole V5 couples, for example, the electrode lead-out portion 15E2 for anode and the solder pattern 151M1B.

[0132] Fig.13 yes Fig. 12A 1 is an exploded perspective view of an example of the configuration of the receiving member 14 shown. In the present embodiment, the metal pattern 144M2 is disposed inside the metal pattern 144M1 surrounding the opening 144H along the edge. The metal patterns 141M1, 143M1, and 143M2 and the through holes V1, V2, and V3 provided to the first layer 141 and the intermediate layer 143 are patterned to correspond to the metal pattern 144M1 and the metal pattern 144M2, respectively.

[0133] For example, this leads out, for example, the cathode of the light-emitting element 11 from the electrode lead-out portion 15E1 through the metal pattern 141M1, the through hole V1, the metal pattern 143M1, the two through holes V2, the metal pattern 144M1, the solder pattern 151M1A, and the through hole V4. For example, the anode of the light-emitting element 11 is led out from the electrode lead-out portion 15E2 through the wiring W, the metal pattern 143M2, the through hole V3, the metal pattern 144M2, the solder pattern 151M1B, and the through hole V5. In addition, in the case where an insulating material is used for the base 12, a wiring is coupled from a metal pattern (not shown) on the base 12 to the metal pattern 143M1 or the metal pattern 141M1. This electrically couples, for example, the electrode lead-out portion 15E1 and the light-emitting element 11.

[0134] In this way, providing the electrode lead-out portion 15E on the upper surface 15S1 of the cover 15 shortens the conduction path between the light emitting element 11 and the electrode lead-out portion 15E, making it possible to further reduce the internal resistance, compared with the above-described first embodiment.

[0135] In addition, in the present embodiment, two electrode lead portions 15E1 and one electrode lead portion E2 are arranged in the shape of the letter L. This makes it possible to form a horizontal or vertical array, for example, when a plurality of semiconductor light emitting devices 10D are coupled in series in the light emitting device 1. This increases the degree of freedom in layout.

[0136] Furthermore, in the present embodiment, the upper surface 15S1 of the cover 15 is provided with an electrode lead-out portion 15E. This allows miniaturization compared to the first embodiment described above. For example, the cost of the light-emitting device 1 can be suppressed as a result. In addition, the semiconductor light-emitting device 10D can be placed more closely in the light-emitting device 1. Furthermore, as the size of the semiconductor light-emitting device 10D is reduced, the housing member 14 and the cover 15 have a smaller bonding area. This makes it possible to suppress the occurrence of short circuits and cracks in the housing member 14 and the like due to stress concentration on the bonding area.

[0137] <5. Fifth embodiment>

[0138] Fig.14A An example of a planar configuration of a semiconductor light emitting device (semiconductor light emitting device 10E) according to a fifth embodiment of the present disclosure is schematically shown. Fig. 14B Schematically shows the Fig.14A The cross-sectional structure of the cover 15 is shown along the line VV. Fig.15 yes Fig.14A An exploded perspective view of an example of a configuration of the receiving member 14 is shown. Fig.16 Schematically shows the arrangement Fig.15 An example of a planar shape of a metal pattern 142M1 on an upper surface 142S1 of a second layer 142 is shown. The semiconductor light emitting device 10E according to the present embodiment is different from the first embodiment described above in that a recessed portion 15C is provided on the lower surface 15S2 side of the cover 15, and the accommodating member 14 includes a first layer 141 and a second layer 142. The recessed portion 15C accommodates the light emitting element 11 and the like.

[0139] In this embodiment, the upper surface 141S1 of the first layer 141 is provided with two metal patterns 141M1A and 141M1B independent of each other. The second layer 142 is provided with an opening 142H in which the reflector 13 is arranged. The upper surface 142S1 of the second layer 142 is provided with a metal pattern 141M1A and 141M1B having a plurality of metal patterns 141M1A and 141M1B, respectively. Fig.16The metal pattern 142M1 is a planar shape as shown. The metal pattern 142M1 includes a metal pattern 14MM for mounting the base 12 in addition to the metal pattern 14MC for bonding and the metal pattern 14ME included in the electrode lead-out portion 14E1. The metal pattern 14MM is arranged inside the metal pattern 14MC along the edge. Openings 14MH1 and 14MH2 are provided on both sides of the metal pattern 14MM. The opening 14MH1 is set to include, for example, an opening 142H. The upper surface 142S1 of the second layer 142 is provided with a metal pattern 142M2A adjacent to the metal pattern 14ME and a metal pattern 142M2B located inside the opening 14MH2 as the metal pattern 142M2. Solder resists 17A, 17B and 17C are formed on the boundary between the metal pattern 14MC and the metal pattern 14ME and the boundary between the metal pattern 14MC and the metal pattern 14MM, respectively. The second layer 142 is also provided with one through hole V6 and two through holes V7 penetrating the second layer 142 in the Z-axis direction. One through hole V6 couples the metal pattern 141M1A and the metal pattern 142M1 of the metal pattern 14MC. Two corresponding through holes V7 couple the metal pattern 141M1B and the metal pattern 142M2A and the metal pattern 142M2B.

[0140] In this manner, the recessed portion 15C is provided on the cover 15 side, so that in addition to the effects of the above-described first embodiment, thinning can be achieved.

[0141] <6. Sixth embodiment>

[0142] Fig.17 An example of a planar configuration of a semiconductor light emitting device (semiconductor light emitting device 10F) according to a sixth embodiment of the present disclosure is schematically shown. Fig.18 yes Fig.17 An exploded perspective view of an example of a configuration of the receiving member 14 is shown. Fig.19 Schematically shows Fig.18 An example of the planar shape of the metal pattern 142M1 is shown in FIG. The semiconductor light emitting device 10F according to the present embodiment is different from the fifth embodiment described above in that the base 12 on which the light emitting element 11 is mounted and the reflector 13 are mounted on the same plane (the upper surface 142S1 of the second layer 142).

[0143] In this embodiment, the upper surface 141S1 of the first layer 141 is provided with a metal pattern 141M1B. The upper surface 142S1 of the second layer 142 is provided with a metal pattern 141M1B. Fig.19The metal pattern 142M1 of the plane shape shown. In addition to the metal pattern 14MC for bonding and the metal pattern 14ME included in the electrode lead-out portion 14E1, the metal pattern 142M1 also includes a metal pattern 14MM1 on which the base 12 is mounted and a metal pattern 14MM2 on which the reflector 13 is mounted. The metal pattern 14MM1 and the metal pattern 14MM2 are arranged inside the metal pattern 14MC along the edge. An opening 14MH3 is provided between the metal pattern 14MM1 and the metal pattern 14MM2. In addition, similarly to the fifth embodiment described above, the opening 14MH2 is arranged inside the metal pattern 14MC along the edge. The upper surface 142S1 of the second layer 142 is provided with a metal pattern 142M2A adjacent to the metal pattern 14ME and a metal pattern 142M2B in the opening 14MH2 as the metal pattern 142M2.

[0144] Solder resists 17A, 17B, and 17C are formed on the boundaries between the metal pattern 14MC and the metal pattern 14ME and the boundaries between the metal pattern 14MC and the metal pattern 14MM1 and the metal pattern 14MM2, respectively. The metal pattern 141M1B is coupled to the corresponding metal patterns 142M2A and 142M2B through two vias V7.

[0145] In this way, the bottom surface of the recessed portion 14C can be a flat surface, and the reflector 13 and the base 12 on which the light emitting element 11 is mounted can be arranged in the same plane. Compared with the first embodiment, the fifth embodiment, etc. described above, the base 12 and the reflector 13 are mounted on the same metal pattern (metal pattern 142M1), so that the stacking deviation of the metal pattern used as the mounting surface of each can be prevented. In addition to the effects of the first embodiment and the fifth embodiment described above, this can also improve the mounting accuracy.

[0146] <7. Seventh Embodiment>

[0147] Fig. 20 An example of a planar configuration of a semiconductor light emitting device (semiconductor light emitting device 10G) according to a seventh embodiment of the present disclosure is schematically shown. The semiconductor light emitting device 10G according to the present embodiment is different from the second embodiment described above in that a metal pattern 14MC and a metal pattern 14ME provided on a bonding surface 14S1 of a receiving member 14 are formed separately, and the metal pattern 14MC and the metal pattern 14ME are electrically coupled through a solder pattern 151M.

[0148] In this manner, the metal pattern 14MC and the metal pattern 14ME can be coupled by using the bonding member 16 (solder pattern 151M) provided on the cover 15 side.

[0149] <8. Eighth Embodiment>

[0150] Fig.21 An example of a planar configuration of a semiconductor light emitting device (semiconductor light emitting device 10H) according to an eighth embodiment of the present disclosure is schematically shown. Fig. 22 yes Fig.21 1 is an exploded perspective view of an example of the configuration of the accommodating member 14. The semiconductor light emitting device 10H according to the present embodiment is different from the first embodiment described above in that the metal pattern 14MC provided on the bonding surface 14S1 of the accommodating member 14 is formed separately from the metal patterns included in the electrode lead-out portion 14E1 and the electrode lead-out portion 14E2 on the bonding surface 14S1 of the accommodating member 14, and the metal pattern 144M3 included in the metal pattern 14MC is used as a ground (GND) pattern.

[0151] In the present embodiment, the entire upper surface 141S1 of the first layer 141 is provided with a metal pattern 141M1. The upper surface 143S1 of the intermediate layer 143 is provided with metal patterns 143M1 and 143M2 similar to those of the first embodiment described above. In addition, the intermediate layer 143 is provided with two vias 143Hv, in which a through hole V8 is formed. The through hole V8 electrically couples the metal pattern 141M1 provided on the first layer 141 and the metal pattern 144M3 provided on the upper surface 144S1 of the bonding layer 144. The upper surface 144S1 of the bonding layer 144 is independently provided with the metal patterns 144M1 and 144M2 included in the electrode lead-out portions 14E1 and 14E2 and a metal pattern 144M3 used as a GND pattern. The metal pattern 144M3 is provided to surround the opening 144H along the edge. The opening 144H is provided in the bonding layer 144. The metal pattern 144M3 is included in the metal pattern 14MC and is used to join the cover 15 (specifically, the solder pattern 151M). In addition, a portion of the metal pattern 144M3 is led out between the metal pattern 144M1 and the metal pattern 144M2. A portion of the metal pattern 144M3 is coupled to an external electrode (GND electrode) (metal pattern 14MG), for example. The solder resist 17 is formed on the boundary between the metal pattern 14MC and the metal pattern 14MG. The metal pattern 143M1 and the metal pattern 144M1 are electrically coupled through the through hole V2, and the metal pattern 143M2 and the metal pattern 144M2 are electrically coupled through the through hole V3. As described above, the metal pattern 144M3 is electrically coupled to the metal pattern 141M1 through the through hole V8 that passes through the intermediate layer 143 and the bonding layer 144.

[0152] In this way, the recessed portion 14C accommodating the light emitting element 11 can be surrounded, and the metal pattern 14MC for joining the cover 15 can be used as a GND pattern. In this way, for example, in addition to the effects of the first embodiment described above, there is an effect of reducing EMI in the case of high-frequency driving of the light emitting element 11. In addition, high-frequency devices that are sensitive to noise can also be placed.

[0153] <9. Ninth Embodiment>

[0154] Fig.23 An example of a planar configuration of a semiconductor light emitting device (semiconductor light emitting device 10 ) according to a ninth embodiment of the present disclosure is schematically shown. Fig.24 yes Fig.23 An exploded perspective view of an example of a configuration of the receiving member 14 is shown. FIG. 25A to FIG. 25C Schematically shows the Fig.23 The sectional configuration of the receiving member 14 taken along the lines VI-VI, VII-VII, and VIII-VIII is shown. The semiconductor light emitting device 10I according to the present embodiment is different from the first embodiment in that the light of the light emitting element 11 is extracted in the horizontal direction.

[0155] The receiving member 14 according to the present embodiment is provided with a cover 18 on the side surface, and the bonding member 19 is interposed between them. The cover 18 has light transmittance. The light emitted from the light emitting element 11 placed in the recessed portion 14C of the receiving member 14 is led out through the cover 18. Therefore, the cover 15 bonded to the bonding surface 14S1 of the receiving member 14 does not necessarily have to have light transmittance. For example, a metal plate can be used. This allows the main body of the cover 15 to be used as a conductive path.

[0156] In addition, in the present embodiment, the second layer 142 has a three-layer structure in which two intermediate layers (intermediate layer 143 and intermediate layer 145) and a bonding layer 144 are stacked in sequence. The intermediate layer 143 is provided with a cutout 143X having a shape of the letter U as a plane shape. The upper surface 143S1 is provided with metal patterns 143M1 and 143M2 similar to the above-mentioned first embodiment, for example. The intermediate layer 143 is also provided with a through hole V1 that penetrates the intermediate layer 143 in the Z-axis direction. The metal pattern 143M1 of the first layer 141 and the metal pattern 141M1 are electrically coupled. Like the intermediate layer 143, the intermediate layer 145 is provided with a cutout 145X having a shape of the letter U as a plane shape. The cutout 145X of the intermediate layer 145 is deeper than the cutout 143X of the intermediate layer 143. For example, the side surface of the cutout 145X forms the same side surface as a portion of the opening 144H provided in the bonding layer 144. In the present embodiment, the base 12 is mounted on the metal pattern 143M1 in the cutout 145X. In addition, the intermediate layer 145 is provided with vias 145H1, 145H2 and 145H3, through which two through holes V2 and one through hole V3 pass. The two through holes V2 couple the metal pattern 143M1 and the metal pattern 144M1. One through hole V3 couples the metal pattern 143M2 and the metal pattern 144M2. The upper surface 144S1 of the bonding layer 144 is provided with, for example, the same metal patterns 144M1 and 144M2 as those in the first embodiment described above. The solder resist 17 is formed on the boundary between the metal pattern 14MC and the metal pattern 14ME of the metal pattern 144M1.

[0157] In this way, light emitted from the light emitting element 11 is led out in the horizontal direction, thereby allowing the metal plate to be used as the cover 15. Thus, the cross-sectional area of ​​the wiring that electrically couples the light emitting element 11 with the outside (e.g., the electrode lead portion 14E1) can be further increased, and the internal resistance can be further reduced.

[0158] In addition, the semiconductor light emitting device 10 may have the following configuration. Fig.26 Another example of the planar configuration of the semiconductor light emitting device 10 is schematically shown. Fig. 27 Schematically shows the Fig.26 IX-IX line shown in the cross-sectional configuration of the semiconductor light emitting device 10. For example, the lens 23 may be provided at the cutout portion 143X of the intermediate layer 143. The lens 23 is, for example, a collimating lens. In the case where light emitted from the light emitting element 11 is led out from the horizontal direction as in the semiconductor light emitting device 10I according to the present embodiment, a large radiation angle may cause vignetting. Therefore, installing the lens 23 reduces the radiation angle and makes it possible to prevent vignetting from occurring.

[0159] <10. Tenth Embodiment>

[0160] Fig.28 An example of a planar configuration of a semiconductor light emitting device (semiconductor light emitting device 10J) according to a tenth embodiment of the present disclosure is schematically shown. Fig.29 Schematically shows the Fig.28 XX line shows a cross-sectional structure of the semiconductor light emitting device 10J. Fig.30 yes Fig.28 1 is an exploded perspective view showing the configuration of the housing member 14. A semiconductor light emitting device 10J according to the present embodiment is different from the above-described first embodiment in that a vertical resonator surface emitting laser is used as the light emitting element 21.

[0161] In the present embodiment, the upper surface 141S1 of the first layer 141 is provided with two metal patterns 141M1A and 141M1B independent of each other. The second layer 142 has an opening 142H. The upper surface 142S1 is provided with metal patterns 142M1 and 142M2 similar to the metal patterns 144M1 and 144M2 in the above-mentioned first embodiment, for example. The metal pattern 142M1 includes a bonding metal pattern 14MC and a metal pattern 14ME included in the electrode lead-out portion 14E1. The solder resist 17 is formed on the boundary between the metal pattern 14MC and the metal pattern 14ME. The metal pattern 141M1A and the metal pattern 142M1 are electrically coupled through the through hole V1, and the metal pattern 141M1B and the metal pattern 142M2 are electrically coupled through the through hole V2. The light-emitting element 21 is installed in the opening 142H through the base 12.

[0162] In addition, if Fig.31 As shown, the semiconductor light emitting device 10J may be provided with a lens 153 on the upper surface 15S1 side of the cover 15. This makes it possible to control the radiation angle of light emitted from the light emitting element 21. Note that the lens 153 may also be provided on the lower surface 15S2 side of the cover 15. Alternatively, the lens 153 may be provided on both the upper surface 15S1 side and the lower surface 15S2 side of the cover 15. However, as Fig.31 As shown in FIG. 1 , providing the lens 153 on the upper surface 15S1 side of the cover 15 allows for miniaturization compared with providing the lens 153 on the lower surface 15S2 side of the cover 15 .

[0163] In addition, if Fig.32 As shown, the semiconductor light emitting device 10J may be provided with a diffraction element 154 on the upper surface 15S1 side of the cover 15. Providing the diffraction element 154 makes it possible to convert light emitted from the light emitting element 21 into a desired output such as a random dot pattern.

[0164] <11. Modification Example>

[0165] (Modified Example 1)

[0166] Fig.331 is a schematic exploded perspective view of the main parts of a light emitting device (light emitting device 2) according to Modification Example 1 of the present disclosure. The light emitting device 2 includes a substrate 31, a semiconductor light emitting device (e.g., semiconductor light emitting device 10A), and an array lens 33 in this order. In other words, the light emitting device 2 is not provided with a lens holding member (e.g., Figure 5 The substrate 31 of the light emitting device 2 includes, for example, a plate-shaped portion 311, a holding portion 312, and a terminal portion 313E. In addition, the light emitting device 2 of this modification has the same structure as the light emitting device 1 of the first embodiment described above. The light emitting device 2 of this modification also has the same effects.

[0167] The plate-shaped portion 311 of the substrate 31 is, for example, a plate member having a quadrangular planar shape. A plurality of semiconductor light emitting devices 10A are arranged on the plate-shaped portion 311 in, for example, a matrix.

[0168] The holding portion 312 has a planar shape of a quadrilateral frame that surrounds a plurality of semiconductor light emitting devices 10A arranged in the middle of the plate-shaped portion 311. The holding portion 312 is in contact with the plate-shaped portion 311 and the array lens 33 (frame portion 33F). The distance between each semiconductor light emitting device 10A and the lens 331 is adjusted according to the thickness of the holding portion 312.

[0169] The terminal portion 313E has, for example, a Fig.33 The terminal portion 313E is a strip-shaped planar shape extending in the Y direction in the direction of the center of the semiconductor light emitting device 10A. The terminal portion 313E is provided on the plate-shaped portion 311. The terminal portion 313E extends from the inside of the holding portion 312 to the outside. The electrode lead portions 14E1 and 14E2 of the semiconductor light emitting device 10A are electrically coupled to the terminal portion 313E. This electrically couples the light emitting element 11 to the outside.

[0170] The plate-like portion 311, the retaining portion 312 and the terminal portion 313E are, for example, integral. The plate-like portion 311 includes, for example, aluminum. The retaining portion 312 includes, for example, PEEK (polyetheretherketone). The terminal portion 313E includes a metal material. The plate-like portion 311 and the retaining portion 312 are co-molded, for example, by insert injection molding or the like. The plate-like portion 311 may include, for example, aluminum (Al), copper (Cu), copper-tungsten (Cu-W), aluminum nitride (AlN), etc. The retaining portion 312 may include, for example, aluminum oxide, aluminum nitride, Kovar, etc. In this case, the plate-like portion 311 and the retaining portion 312 are insulated from the terminal portion 313E, for example, by low-melting-point glass or the like.

[0171] (Modified Example 2)

[0172] A plurality of corresponding semiconductor light emitting devices 10A (light emitting elements 11) placed on the substrate 31 can emit light within a plurality of wavelength ranges. The plurality of semiconductor light emitting devices 10A placed on the substrate 31 may include, for example, a semiconductor light emitting device 10A including a light emitting element 11 that emits light within a red wavelength range, a semiconductor light emitting device 10A including a light emitting element 11 that emits light within a blue wavelength range, and a semiconductor light emitting device 10A including a light emitting element 11 that emits light within a green wavelength range. The ratio and arrangement of the semiconductor light emitting devices 10A of each color are adjusted based on the luminosity curve and the output (mW and Im). This makes it possible to draw white light from the light emitting device 1. In this case, for example, the light emitting device 1 includes a diffuser plate and the like. The light emitted from the semiconductor light emitting device 10A passes through a lens 331 and a diffuser plate and the like.

[0173] In this way, the semiconductor light emitting device 10A (light emitting element 11) emitting light of wavelength ranges different from each other at a desired ratio and in a desired arrangement can be easily placed on the substrate 31. Therefore, the overall optical balance can be easily adjusted.

[0174] The light emitting element 11 may also include an LED (Light Emitting Diode) etc. However, in the light emitting element 11 including a semiconductor laser element, it is possible to further increase the light intensity and recognize the light at a farther position than in the light emitting element 11 including an LED.

[0175] <12. Application Examples>

[0176] The light emitting devices 1 and 2 described in the first embodiment and the modified examples are suitable for use in, for example, a projection display.

[0177] Fig.34 1 is a diagram showing a configuration example of a projection display (projection display 200) using light emitting devices 1 and 2 as light sources. The projection display 200 is, for example, a display that projects an image on a screen. The projection display 200 is coupled to an external image providing device, such as a computer including a PC or various image players, via an I / F (interface). The projection display 200 projects on a screen or the like based on an image signal input to the I / F. Note that the configuration of the projection display 200 described below is an example. The projection display according to the present technology is not limited to this configuration.

[0178] The projection display 200 includes light emitting devices 1 and 2, a multi-lens array 212, a PBS array 213, a focusing lens 214, reflection mirrors 215a and 215c to 215e, dichroic mirrors 216 and 217, light modulators 218a to 218 218c, a dichroic prism 219, and a projection lens 220.

[0179] In each of the light emitting devices 1 and 2, light emitted from the light emitting element 11 passes through the array lens 33 and is led out as collimated light. The light enters the multi-lens array 212. The multi-lens array 212 has a structure in which a plurality of lens elements are arranged in an array. The multi-lens array 212 converges the light emitted from each of the light emitting devices 1 and 2. The PBS array 213 polarizes the light converged by the multi-lens array 212 into light having a predetermined polarization direction, for example, a P polarized wave. The focusing lens 214 converges the light that has been converted by the PBS array 213 into light having a predetermined polarization direction.

[0180] The dichroic mirror 216 transmits red light R of the light entering the dichroic mirror 216 through the focusing lens 214 and the reflecting mirror 215e and reflects green light G and blue light B. The red light R transmitted by the dichroic mirror 216 is guided to the light modulator 218a through the reflecting mirror 215a.

[0181] The dichroic mirror 217 transmits the blue light B among the light reflected by the dichroic mirror 216 and reflects the green light G. The green light G reflected by the dichroic mirror 217 is guided to the light modulator 218b. In contrast, the blue light B transmitted by the dichroic mirror 217 is guided to the light modulator 218c through the reflection mirrors 215d and 215c.

[0182] The light modulators 218a to 218c optically modulate the respective incident colored lights, and input the respective optically modulated colored lights to the dichroic prism 219. The dichroic prism 219 combines the respective colored lights, which have been optically modulated and entered the dichroic prism 219, into one optical axis. The respective combined colored lights are projected onto a screen or the like through the projection lens 220.

[0183] In the projection display 200, three light modulators 218a to 218c corresponding to the three primary colors of red, green, and blue are combined, and any color is displayed. In other words, the projection display 200 is a so-called three-panel projection display.

[0184] The present technology has been described with reference to the first to tenth embodiments, modification examples, and application examples, but the present technology is not limited to the above-mentioned embodiments, etc. Various modifications are possible. For example, the composition, configuration, number, etc. of the light-emitting devices 1 and 2 illustrated in the above-mentioned embodiments, etc. are only examples. Each of the light-emitting devices 1 and 2 does not necessarily include all components. In addition, each of the light-emitting devices 1 and 2 may further include another component.

[0185] In addition, in the above-mentioned first embodiment and the like, an example in which the bonding member 16 is used as a conductive path between the cathode of the light-emitting element 11 and the electrode lead-out portion 14E1 is described, but this is not restrictive. For example, the bonding member 16 can also be used as a conductive path between the anode of the light-emitting element 11 and the electrode lead-out portion 14E2. In addition, in the above-mentioned first embodiment and the like, an example in which one light-emitting element 11 is accommodated in the recessed portion 14C has been described, but two or more light-emitting elements 11 may be accommodated. In addition, light-emitting elements 11 corresponding to wavelengths different from each other may be accommodated.

[0186] In addition, the above-mentioned light emitting devices 1 and 2 have been described in which the terminal portions 322E and 313E are provided in the lens holding member 32 or the substrate 31. Each terminal portion 322E and 313E is used to electrically couple the light emitting element 11 to the outside. However, the terminal portion may be provided separately from the lens holding member 32 or the substrate 31.

[0187] It should be noted that the effects described in this specification are only examples, but not limited to them. In addition, there may be other effects.

[0188] It should be noted that the technology can have the following configuration. According to the present technology having the following configuration, the conductive joint is electrically coupled to the wiring structure provided in the first container member. This increases the cross-sectional area of ​​the wiring that electrically couples the light-emitting element to the outside. The conductive joint joins the first container member and the second container member. The light-emitting element is contained in the first container member and the second container member. This allows the internal resistance to be reduced.

[0189] (1) A semiconductor light emitting device comprising:

[0190] Light emitting element;

[0191] a first receiving member and a second receiving member, at least one of which has a wiring structure, the first receiving member and the second receiving member receiving the light emitting element, the wiring structure electrically coupling the light emitting element to the outside; and

[0192] A conductive joint portion joins the first receiving member and the second receiving member, the conductive joint portion being electrically coupled to the wiring structure.

[0193] (2) The semiconductor light emitting device according to (1), wherein

[0194] The first receiving member includes a first recessed portion, a first layer, and a second layer, the first recessed portion forming a receiving space for receiving the light emitting element, the first layer being included in a bottom surface of the first recessed portion, and the second layer being included in a side surface of the first recessed portion,

[0195] One or more first metal patterns are formed on the first layer, and

[0196] One or more second metal patterns are formed on the second layer, the one or more second metal patterns being electrically coupled to at least a portion of the one or more first metal patterns.

[0197] (3) The semiconductor light emitting device according to (2), wherein the one or more first metal patterns and the one or more second metal patterns are electrically coupled through a via hole, and the via hole penetrates the second layer.

[0198] (4) The semiconductor light emitting device according to (2) or (3), wherein

[0199] The second layer includes a bonding layer and an intermediate layer, the bonding layer being bonded to the second receiving member, the intermediate layer being disposed between the bonding layer and the first layer, and

[0200] One or more second metal patterns are formed on each of the bonding layer and the intermediate layer.

[0201] (5) The semiconductor light emitting device according to (4), wherein at least a portion of the one or more second metal patterns formed on the bonding layer is included in the conductive bonding portion.

[0202] (6) The semiconductor light emitting device according to (4) or (5), wherein the one or more second metal patterns formed on the bonding layer include an electrode lead-out portion electrically coupled to an electrode of the light emitting element.

[0203] (7) The semiconductor light emitting device according to (6), wherein the conductive joining portion and the electrode lead portion are electrically coupled.

[0204] (8) The semiconductor light emitting device according to any one of (1) to (7), wherein

[0205] the first receiving member and the second receiving member are joined with solder interposed therebetween, and

[0206] The solder is included in the conductive joint.

[0207] (9) The semiconductor light emitting device according to any one of (1) to (8), wherein the second housing member includes a second recessed portion that forms a housing space for housing the light emitting element.

[0208] (10) The semiconductor light emitting device according to any one of (1) to (9), wherein

[0209] The second receiving member has light transmittance, and

[0210] The light emitted from the light emitting element is output to the outside through the second receiving member.

[0211] (11) The semiconductor light emitting device according to (10), wherein

[0212] The second accommodating member has a light emitting surface on a side opposite to a surface joined to the first accommodating member, and

[0213] The light emitting surface has a lens shape.

[0214] (12) The semiconductor light emitting device according to any one of (2) to (11), wherein

[0215] The first receiving member has light transmittance on at least a portion of a side surface included in the first recessed portion, and

[0216] Light emitted from the light emitting element is emitted to the outside through the side surface.

[0217] (13) The semiconductor light emitting device according to any one of (2) to (12), further comprising a reflective member that reflects light emitted from the light emitting element, wherein:

[0218] The reflective member is accommodated in the first recessed portion together with the light emitting element.

[0219] (14) The semiconductor light emitting device according to any one of (1) to (13), further comprising a base, wherein

[0220] The base is disposed between the light emitting element and the first receiving member.

[0221] (15) The semiconductor light emitting device according to (14), wherein the base has conductivity.

[0222] (16) The semiconductor light emitting device according to any one of (1) to (15), wherein the light emitting element includes a semiconductor laser.

[0223] (17) The semiconductor light emitting device according to (16), wherein the semiconductor laser includes a gallium nitride (GaN)-based semiconductor.

[0224] (18) The semiconductor light emitting device according to any one of (1) to (17), including light emitting elements that emit light having wavelengths different from each other.

[0225] (19) The semiconductor light emitting device according to any one of (3) to (18), wherein the reflective member includes a reflective mirror.

[0226] This application claims priority based on Japanese Patent Application No. 2019-018059 filed with the Japan Patent Office on February 4, 2019, the entire contents of which are incorporated herein by reference.

[0227] It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.

Claims

1. A semiconductor light emitting device, comprising: Light emitting element; a first receiving member and a second receiving member, at least one of which has a wiring structure, the first receiving member and the second receiving member receiving the light emitting element, the wiring structure electrically coupling the light emitting element to the outside; as well as a conductive joint portion that joins the first receiving member and the second receiving member, the conductive joint portion being electrically coupled to the wiring structure, in, The first receiving member includes a first recessed portion, a first layer, and a second layer, wherein the first recessed portion forms a receiving space for receiving the light emitting element, the first layer is included in a bottom surface of the first recessed portion, and the second layer is included in a side surface of the first recessed portion. One or more first metal patterns are formed on the first layer, and One or more second metal patterns are formed on the second layer, the one or more second metal patterns being electrically coupled to at least a portion of the one or more first metal patterns.

2. The semiconductor light emitting device according to claim 1, wherein: The one or more first metal patterns and the one or more second metal patterns are electrically coupled through vias, which penetrate the second layer.

3. The semiconductor light emitting device according to claim 1, wherein: the second layer includes a bonding layer and an intermediate layer, the bonding layer being bonded to the second receiving member, the intermediate layer being disposed between the bonding layer and the first layer, and The one or more second metal patterns are formed on each of the bonding layer and the intermediate layer.

4. The semiconductor light emitting device according to claim 3, wherein: At least a portion of the one or more second metal patterns formed on the bonding layer is included in the conductive bonding part.

5. The semiconductor light emitting device according to claim 3, wherein: The one or more second metal patterns formed on the bonding layer include an electrode lead-out portion electrically coupled to an electrode of the light emitting element.

6. The semiconductor light emitting device according to claim 5, wherein: The conductive joint portion and the electrode lead portion are electrically coupled.

7. The semiconductor light emitting device according to claim 1, wherein: the first receiving member and the second receiving member are joined with solder interposed therebetween, and The solder is included in the conductive joining portion.

8. The semiconductor light emitting device according to claim 1, wherein: The second receiving member includes a second recessed portion, and the second recessed portion forms a receiving space for receiving the light emitting element.

9. The semiconductor light emitting device according to claim 1, wherein: The second receiving member has light transmittance, and Light emitted from the light emitting element is output to the outside through the second receiving member.

10. The semiconductor light emitting device according to claim 9, wherein: The second receiving member has a light emitting surface on a side opposite to a surface joined to the first receiving member, and The light emitting surface has a lens shape.

11. The semiconductor light emitting device according to claim 1, wherein: The first receiving member has light transmittance on at least a portion of a side surface included in the first recessed portion, and Light emitted from the light emitting element is emitted to the outside through the side surface.

12. The semiconductor light emitting device according to claim 1, further comprising a reflective member that reflects light emitted from the light emitting element, wherein The reflective member is accommodated in the first recess together with the light emitting element.

13. The semiconductor light emitting device according to claim 1, further comprising a base, wherein The base is disposed between the light emitting element and the first receiving member.

14. The semiconductor light emitting device according to claim 13, wherein: The base has conductivity.

15. The semiconductor light emitting device according to claim 1, wherein: The light emitting element includes a semiconductor laser.

16. The semiconductor light emitting device according to claim 15, wherein: The semiconductor laser includes a gallium nitride (GaN)-based semiconductor. 17 . The semiconductor light emitting device according to claim 1 , comprising light emitting elements that emit lights having wavelengths different from each other.

18. The semiconductor light emitting device according to claim 12, wherein: The reflective member includes a reflector.

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