Sensor device comprising a plurality of individual and separate sensor elements

Abstract

A sensor device is proposed, which has a plurality of individual and separate sensor elements, wherein each of the individual sensor elements functions independently and the individual sensor elements of the sensor device are formed from a part of a wafer or from a vertically integrated stack of wafers in one piece, and the sensor device has at least one separation structure, in particular a cutting line, between the individual and separate sensor elements.

Description

TECHNICAL FIELD

[0001] The application starts from a sensor device comprising a plurality of individual and separate sensor elements. BACKGROUND

[0002] Generally, sensor devices, in particular micromechanical sensor devices, are known; thus, micromechanical sensors for measuring acceleration, rotational speed, pressure and other physical quantities are mass-produced for various applications in the automotive and consumer sector. An important trend in the further development of sensors is the improvement of the performance. In certain applications, a significant reduction of the noise is of particular importance. Other applications require a substantial reduction of the offset error or the sensitivity error.

[0003] The performance improvement can basically be achieved by the development of improved sensors, for example by optimized MEMS elements, improved analysis processing circuits (ASICs), measures in the packaging or when comparing / testing the sensors. However, depending on the complexity of the improvement measures, high development costs are required, in particular if a revolutionary, but not only an incremental, performance improvement is required.

[0004] For example, a low-noise signal can be obtained by analyzing the signals of a plurality of sensor elements, as can be seen, for example, from US 2006 0 082 463 A1; however, disadvantageous here is that the overall system integration requires a relatively high outlay and the size prohibits or at least makes very difficult the use in size-sensitive applications.

[0005] Furthermore, methods of vertical integration are known, in which a MEMS wafer or a wafer with micromechanical sensor structures is bonded to an ASIC wafer or a wafer with the associated analysis processing circuit, or in other words, both are connected to each other, wherein in particular the ASIC wafer not only implements the electronic analysis processing circuit but also the capping of the micromechanical sensor structures for the MEMS elements, for example from DE 19 616 014 A1 or US 2006 0 208 326 A1. SUMMARY

[0006] Compared to the prior art, the sensor device according to the application has the advantage that, when using a plurality of individual and separate sensor elements (or individual sensor elements) within the sensor device, i.e. in particular by using an array (at least 2x1, usually nxm) of semiconductor components of the same type, wherein each individual semiconductor component functions independently, wherein the plurality of individual and separate sensor elements (i.e. the array) is formed from one part of a wafer (or substrate) or from one part of two wafers (or two substrates) in one piece (einstückig), not only an improved signal quality (performance) of the entire sensor device can be achieved, but also a reduction in development outlay or a flexibility in development can be achieved, so that even niche applications (Nischenanwendung) with higher performance requirements are effectively operable, for which own product development (due to high development costs at a low number) is not economical. Thus, according to the application, low development costs and small construction size can be achieved at the same time as sensors with high performance and which can be expanded in a simple manner in terms of performance.

[0007] Advantageous configurations and developments of the application can be derived from the preferred embodiments and in the description with reference to the drawings.

[0008] According to the application, it is particularly preferred to provide that the individual and separate sensor elements of the sensor device are connected to one another, in addition to the connection by means of the substrate potential, only or at least substantially only mechanically, in particular only mechanically or only electrically via a rewiring plane (Umverdrahtungsebene) arranged on the side of the second substrate facing away from the first substrate (or on the side of the first substrate facing away from the second substrate). By the individual and separate sensor elements being connected to one another only mechanically or substantially only mechanically, it is advantageously possible according to the application to group or combine different sensor elements differently into sensor devices (or different types of sensor element arrays) (or, in the case of a rewiring plane, to significantly reduce the outlay for implementing different sensor devices (or different sensor element arrays), since only the rewiring plane needs to be adapted if necessary).

[0009] It is further provided in particular that the individual and separate sensor element has a vertically integrated wafer stack, which comprises a first chip device and a second chip device: the first chip device comprises the micromechanical sensor structure and a first substrate; the second chip device comprises the associated evaluation electronics and a second substrate. According to the application, it is thereby advantageous that not only the encapsulation of the micromechanical sensor structure by the evaluation electronics can be realized, and at the same time, the evaluation electronics associated with the sensor structure can be arranged spatially adjacent, so that different arrays of sensor elements and thus the flexibility according to the application can be realized when developing new configurations of sensor devices, or rather types of arrays of individual sensor elements. The realization of the electrical connection between the first substrate and the second substrate and / or between the first chip device and the second chip device, in particular in the form of TSVs (through silicon vias), realizes an advantageous way of electrical connection from the inside of the wafer stack to the outside of the stack, so that not only the electrical signals of the micromechanical sensor structure (MEMS signals), but also the electrical signals of the evaluation electronics (ASIC signals) can be guided. It is further preferred according to the application that the sensor device according to the application comprising a plurality of individual and separate sensor elements can be used as a so-called Chip Scale Package, i.e. the base area of the sensor device is defined by the size of the plurality of individual and separate sensor elements, and no further housing or packaging is applied to the sensor device. The sensor device according to the application, i.e. the array of individual and separate sensor elements, or rather individual semiconductor components of the same type, can preferably be provided, in particular as a Chip Scale Package, for example, so that it can be soldered directly to a circuit board or can be vertically stacked to other chips, or interposers, or lead frames, or package substrates by Flip-Chip-Montage. It is furthermore preferred that each of the individual sensor elements functions independently, and in particular, the individual sensor elements of the sensor device are each formed monolithically from one part of a wafer with respect to their first and second chip devices and / or with respect to their first and second substrates.

[0010] According to the application, it is further preferred that the sensor device has an electrical carrier which extends essentially parallel to the main extension plane of the substrate, wherein the individual and separate sensor elements are mechanically connected to the electrical carrier, wherein the electrical carrier has, inter alia, electrical printed conductors and / or other rewiring planes. In this way, it is advantageously possible to address the individual semiconductor components, i.e. the individual sensor elements, of the array individually by means of a bus system, for example by means of a microcontroller, so that the signals of the individual semiconductor components can be suitably weighted and averaged. The other rewiring planes, on the electrical carrier, serve, inter alia, for electrically contacting the pins of the same type in the individual semiconductor components (individual sensor elements), and can be implemented, for example, either on the carrier element for flip-chip assembly (for example a circuit board or a microcontroller ASIC) or already by means of a dedicated metal rewiring on the array (i.e. as part of the rewiring plane arranged on the side of the second substrate facing away from the first substrate (or arranged on the side of the first substrate facing away from the second substrate) described above); alternatively, this functionality can be implemented not only by means of the rewiring plane but also by means of other rewiring planes. In the case of the use of rewiring planes (on the outer surfaces of the first or second substrate), rewiring can also be implemented in such a way, inter alia, that the array can be electrically contacted by means of wirebonds; in this case, the individual semiconductor elements (i.e. the individual sensor elements) within the array are no longer completely identical, but differ in terms of rewiring on the contacting side.

[0011] According to the application, it is particularly preferred that the individual and separate sensor elements or at least a part of the individual and separate sensor elements are sensor elements of the same type or are identical sensor elements (arranged, inter alia, in the sense of an array), wherein, inter alia, microelectromechanical components (MEMS components) can be considered, inter alia, inertial sensor elements (for example for measuring linear acceleration in one, two or three spatial directions and / or for measuring rotational acceleration or rotational speed around a rotational axis also in one, two or three spatial directions) or temperature sensor elements or pressure sensor elements or actuator elements.

[0012] With regard to the functioning of the sensor device according to the application, it is preferred according to the application that the sensor device is configured in terms of the evaluation of the individual and separate sensor elements of the same type in such a way that the measured values of these individual and separate sensor elements are arithmetically averaged and / or weighted averaged. It can be advantageous, for example, to arithmetically average the measured values at a first point in time and to weight-average the measured values at a second point in time.

[0013] Embodiments of the application are shown in the drawings and are further explained in the following description. BRIEF DESCRIPTION OF DRAWINGS

[0014] The attached diagram shows:

[0015] Figure 1 A schematic side view shows a cross-sectional view of a single and separate sensor element of the sensor device according to the invention.

[0016] Figure 2 A schematic side view shows a cross-sectional view of a sensor device according to the invention, implemented as an example with a 1×3 array.

[0017] Figure 3 A schematic top view of the outer side of the electrical carrier, or first or second substrate, of the sensor device according to the invention is shown. This sensor device is implemented as an example of a 2×3 array in a first embodiment of the invention.

[0018] Figure 4 A schematic top view of the outer side of the electrical carrier, or first or second substrate, of the sensor device according to the invention is shown. This sensor device is implemented as an example of a 2×3 array in a second embodiment of the invention.

[0019] Figure 5 A schematic top view of the outer side of the first or second substrate of the sensor device according to the invention is shown, which is implemented as an example of a 2×3 array for a third embodiment of the invention.

[0020] In the various figures, the same parts are always given the same figure references, so they are usually named or mentioned only once. Detailed Implementation

[0021] As an exemplary implementation, in Figure 1 A schematic side view of the sensor device 200 according to the present invention is shown in the middle (see also...). Figure 2 A cross-sectional view of a single and separate sensor element 100. Therefore, Figure 1A basic configuration of a single sensor element according to the application is shown, wherein the sensor device 200 has a plurality of such sensor elements 100 or single sensor elements 100, in particular a plurality of such sensor elements 100 of the same type or identically configured. The single sensor element 100 is in particular implemented as a so-called ASICap-MEMS component 100, i.e. it has a first substrate 42 with a micromechanical sensor structure, which is configured or implemented in (or mainly in) a micromechanical functional layer 48, and a second substrate 12 with the associated evaluation electronics 14. The substrates 42, 12 have a main extension plane which is arranged essentially parallel to one another, wherein the first and second substrates 42, 12 are mechanically and electrically connected to one another (i.e. in the "vertical" direction, i.e. perpendicular to the main extension plane), and the first and second substrates 42, 12 are at least partially covered in a direction perpendicular to the main extension plane or form an at least partially closed cavity (Kaverne), in which the micromechanical sensor structure or functional layer 48 of the single sensor element 100 is respectively arranged. Such a sensor element 100 in particular comprises an ASIC chip 10 (or second chip device) and a MEMS chip 40 (or first chip device), wherein the first and second chip devices 40, 10 (or first and second substrates 42, 12) are in particular mechanically connected to one another (in particular in a sealed manner to close the closed cavity) by means of a metal bond connection 30. The bond connection 30 seals the chips in particular in a sealed manner on an external bond frame 30 and, if necessary, provides electrical access 32. The MEMS chip 40 or first chip device 40 can be manufactured for example according to the prior art in a surface micromechanical method and has a MEMS wafer substrate 42 (first substrate 42) and (for example) an oxide layer 44, 46, a silicon rewiring plane 45 and a micromechanical functional layer 48. The ASIC or second chip device 10 comprises an ASIC wafer substrate 12 (second substrate 12) and a function layer 14 which is not further distinguished for transistors and rewiring (i.e. for the circuit functionality of the ASIC). The ASICap component 100 or single sensor element 100 also has a through access 16 (or TSV (Through Silicon Via) 16) by means of which the first and second substrates 42, 12 (or first and second chip devices 40, 10) are electrically connected to one another and / or the first or second substrate 42, 12 is electrically connected to the outer side of the first or second substrate 42, 12 which faces away from the other substrate: for the first substrate 42 (from its inner side facing the second substrate 12) to the outer side thereof facing away from the second substrate 12 or for the second substrate 12 (from its inner side facing the first substrate 42) to the outer side thereof facing away from the first substrate 42.According to the invention, this makes it particularly possible to direct ASIC signals to the back side of the ASIC (second chip device 10), or conversely, to direct signals of the MEMS chip 40 (first chip device 40) to its back side (wherein, the last mentioned alternative is not included). Figure 1 (As shown in the diagram). On the back side of the ASIC, or second chip device 10, there is a passivation layer 18 and a redistribution layer (RDL) 20. Solder balls 110 can be arranged by appropriately metallizing the pad areas using under-bump metallization (UBM, not shown separately), and these solder balls are soldered to the carrier 120 (equipped with contact pads 130) by means of soldering. The carrier 120 is typically a circuit board, but may also involve interposers or active semiconductor chips.

[0022] Figure 2 A schematic side view shows a cross-sectional view of a sensor device 200 according to the invention, implemented as an example of a 1×3 array, i.e., three individual sensor elements 100 (or ASICap components) arranged side by side. These individual sensor elements 100 (or ASICap components) can relate to, for example, accelerometers, speed sensors, pressure sensors, temperature sensors, actuators, especially micromechanical actuators, etc. Scribelines 50 are located between the individual sensor elements 100 (or ASICap components). Thus, apart from the substrate potential, the individual chips (or sensor elements 100) of the array 200 (or the (entire) sensor device 200) are only mechanically connected to each other, but not electrically connected. This is particularly applicable according to embodiments in which there is no redistribution plane 20 (which has or implements electrical connections between the plurality of individual sensor elements 100 (or ASICap components)) as part of a second substrate 12. However, this is not strictly true in an alternative embodiment with a redistribution plane 20 (which is implemented such that it has or implements electrical connections between a plurality of individual sensor elements 100); however, even in such an embodiment, the individual sensor elements 100 are not electrically connected to each other “inside” the individual sensor elements 100 (i.e., in this case, the redistribution plane 20 is arranged only on the outside of the first substrate 42 or the second substrate 12 (i.e., on the side of the second substrate 12 facing away from the first substrate 42 or on the side of the first substrate 42 facing away from the second substrate 12), by means of which the individual sensor elements 100 (or ASICap components) are electrically connected to each other). Through the separation process, the width of the cut line 52 is significantly reduced at the outer edge of the array 200, or sensor device 200. Figure 1 and Figure 2The exemplary embodiments of the application show micromechanical components, in particular micromechanical components formed from a vertically integrated wafer stack. This represents a preferred implementation of the application; however, according to the application, the individual and separate sensor elements 100 do not necessarily have to be micromechanical components, and the individual and separate sensor elements 100 do not necessarily have to be formed from a vertically integrated wafer stack.

[0023] According to the application, the individual and separate sensor elements 100 can also relate to semiconductor components formed only from a wafer or ASIC wafer substrate 12, and which are manufactured by means of methods known from semiconductor production, for example from the manufacture of CMOS wafers. One example of this is an integrated temperature sensor as an individual and separate sensor element 100, in which the temperature is sensed by means of a resistance measuring device, wherein temperature-sensitive resistors are formed, for example, from doped piezoresistive silicon structures or from metal printed conductors. The individual and separate sensor elements 100 each contain an evaluation circuit for reading the resistance, signal processing and / or communication. In this case, no specific micromechanical manufacturing methods are required. For the sake of simplicity, separate illustrations are dispensed with.

[0024] In the sense of the application, the individual and separate sensor elements 100 can also relate to micromechanical semiconductor components which are not formed from a vertically integrated wafer stack, but from a single wafer or ASIC wafer substrate 12, but on which additional micromechanical processing steps are applied. For example, in addition to the processing steps required for the manufacture of the evaluation circuit, specific layer deposition and / or etching methods can be applied to realize MEMS structures on the ASIC wafer substrate 12 in order to form, for example, movable structures for integrated inertial sensors or membranes for integrated pressure sensors. For the sake of simplicity, separate illustrations are also dispensed with.

[0025] Figure 3 The electrical carrier 120 (in the case of the sensor device 200 according to the application, the ASIC wafer substrate 12) is shown in Fig. 1, for example, in the form of a wafer 120, which is formed from a semiconductor material, for example from silicon, and which is provided with a plurality of individual and separate sensor elements 100, which are formed on the wafer 120. Figure 3A schematic top view of the outer side of the first or second substrate 42, 12 (shown on the right side), the sensor device is implemented as an example of a 2×3 array 200 for the first embodiment of the invention. According to the first embodiment, an exemplary 3×2 array 200 of individual semiconductor components 100 is shown, wherein each individual component (individual sensor element 100) has six electrically connected portions, such as or preferably solder balls, which are periodically repeated within the array 200, wherein the corresponding connected portions are represented by the same numbers in the set {1,2,3,4,5,6}. In this case, the electrically connected portions of the individual semiconductor components within the array 200 are not connected to each other. Therefore, electrical signals are aggregated on an electrical carrier 120, on which are arranged means for flip-chip assembly—pads 130—and printed conductors 150 that connect the respective identical pads (bus, substrate potential, supply voltage) to each other. Therefore, in this device, the signals from the individual semiconductor components (or sensor elements 100) of the array 200 are aggregated on the electrical carrier 120 and further processed if necessary. The advantage of this variant is that all individual semiconductor chips (or individual sensor elements 100) on the array 200 (or sensor device 200) include metal rewiring (in accordance with...) Figure 1 The rewiring plane 20 of the second substrate 12 is the same. Therefore, it is possible to divide the same type of wafer into arrays of different sizes, such as 2×2, 3×3 and 4×4 (or sensor devices 200), without changing the wiring.

[0026] Figure 4 The electrical carrier 120 of the sensor device 200 according to the present invention is shown (in Figure 4 A schematic top view of the outer side of the first or second substrate 42, 12 (shown on the right side), the sensor device is implemented as an example of a 2×3 array 200 for the second embodiment of the invention. This second embodiment corresponds to an alternative in which the same type of electrical connections of the individual semiconductor components (or individual sensor elements 100) have been made on the array (or sensor device 200). Figure 4 The diagram also shows the corresponding wiring diagram for a 3×2 array (in this case, the six contacts are shown with different line types, i.e., dashed lines, dotted lines, dotted lines, etc.). Here, printed conductors 160 connect the same type of electrical contacts of the different individual sensor elements 100 of the sensor device 200. This variant requires dedicated rewiring on the array 200, which is specific to the array size (a 2×2 array requires different wiring than, for example, a 4×4 array). Then, only a very low overhead is required compared to the total overhead for manufacturing the semiconductor components 100. This significantly simplifies the wiring complexity on the electrical carrier 120, because...Figure 4 As is shown exemplarily in the middle, now only six active connection pads 130 are required, while the remaining solder connections 140 are passive, i.e. only serve for mechanical fixing of the array 200. Since the failure risk of solder connections in terms of reliability (e.g. destruction of the solder balls (Zerrüttung) due to aging, temperature, adverse environmental conditions) is generally higher than rewiring, the reliability or quality can be improved by the device compared to Figure 3 The device according to the application can also be used instead of the device according to Figure 4 The device according to the application can also be used instead of the device according to the application, in which the active connection pads 130 are arranged in the outermost ball rows of the array 200, in order thereby to make automated solder joint control easy in the final assembly of the array 200.

[0027] Figure 5 A schematic top view of the outer side of the first or second substrate 42, 12 of a sensor device according to the application is shown, which is implemented as an example of a 2x3 array for a third embodiment of the application. According to the third embodiment, rewiring is implemented (e.g. in the rewiring layer 20 of the second substrate 12), whereby the possibility of implementing bond pads 170 for wire bonding is derived. This option can be advantageous for certain applications and housing shapes. Risks associated with flip-chip assembly, such as solder ball destruction, delamination, can thereby be avoided. Even in an array 200 composed of sensors with media access, such as pressure sensors or gas sensors, flip-chip assembly can have to be abandoned for functional reasons.

[0028] Preferably, the array 200 according to the application or the sensor device 200 according to the application is electrically connected to a specific ASIC or microcontroller (not shown), in which the signal processing takes place. Here, different types of signal processing can take place, such as calculating an arithmetic mean, calculating a weighted mean, plausibility checking, inserting or excluding (Ein-bzw. Ausblenden) signals of individual semiconductor components or individual sensor elements 100. Furthermore, additional information can be obtained from the array 200 by data fusion or data analysis, which the individual semiconductor components 100 or individual sensor elements 100 cannot provide.

[0029] Particularly preferably, additional information is obtained from the data of the array 100, which the individual semiconductor components cannot provide. The following examples are listed for this purpose:

[0030] - in a temperature sensor array 200, for example, a lateral temperature gradient due to the difference in the measured temperature in the individual temperature sensors is read;

[0031] - in an array 200 of acceleration sensors, the axis of rotation is determined, for example, by measuring centrifugal accelerations acting to different degrees on the individual acceleration sensors;

[0032] - in an array 200 of pressure sensors, the inclination of the array 200 is determined, for example, by reading the atmospheric pressure difference between the individual pressure sensors (however, wherein, because the pressure difference has to be resolved, a very high resolution is required, which corresponds to height changes in the order of millimeters or less)

[0033] It is particularly preferred that the averaging of the signals within the array is carried out by taking the arithmetic mean. In specific cases, however, it can be preferable to perform a weighted averaging, for example, if it turns out that the semiconductor components 100 (or rather the individual sensor elements 100) located at the outer edges or corners of a 4x4 array, for example, due to bending stresses on the circuit board, produce greater errors than the semiconductor elements further in. In this case, the signals of the semiconductor components further in are preferably considered with a higher weight in the signal averaging.

[0034] It is also preferred according to the application that different averaging methods are used for different measured variables of the individual semiconductor components 100 within the array 200. For example, it is thereby possible to arithmetically average the noise in an array 200 of acceleration sensors (because the noise is independent of bending stresses, i.e. of the position of the individual sensor in the array), while the offset errors are weighted differently (because in the offset errors, bending stresses act on the offset of the individual sensor in a position-dependent manner).

[0035] According to the application, it is therefore advantageous that an array 200 comprising a plurality of semiconductor components 100 (individual sensor elements 100) can improve the signal quality (performance) by appropriate averaging. The improvement relates, inter alia, to the noise, but other errors, such as the offset error and the sensitivity error of the sensor, can also be reduced by averaging. The array 200 can be scaled very easily, i.e. with low development outlay, in terms of its performance. For example, if the noise is to be reduced by a factor of 2, a 2x2 array of individual semiconductor components is recommended (for an nxm array, the noise power density of the entire system is reduced by a factor of 1 / (nxm)0.5). If a factor of 4 is required, a 4x4 array can be separated in a simple manner from a wafer or wafer stack (identical apart from the cutting lines). Due to the low development outlay, even niche applications with, for example, higher performance requirements can be operated efficiently, for which a product development of one's own (due to the high development costs at a lower number) would not be economical. Due to the preferred implementation as a chip-scale package, the dimensions of the semiconductor component array remain within a manageable, acceptable range for many size-sensitive applications. Example: with current technology and design concepts, an acceleration sensor can be implemented with dimensions of approx. 1 mm2 a single ASICap component with a noise power density of about 100 μg / sqrt(Hz). A 4x4 array of such single acceleration sensors would achieve a noise level of about 25 μg / sqrt(Hz) with a footprint of only 16 mm 2 in comparison: in case of a corresponding plurality of conventional acceleration sensors with a standard footprint of 2x2 mm 2 and a sufficient distance between the individual sensors of e.g. 0.2 mm, the total area is about 80 mm 2 i.e. an increase by a factor of 5.

[0036] Furthermore, it can be advantageous according to the application to check the plausibility of the individual semiconductor components (single sensor elements 100) with respect to each other on the basis of the redundancy of their signals. Thus, a functional failure of the individual semiconductor components within the array 200 can be easily identified. For applications which are crucial for safety, for example in a car (ESP system...), this aspect can be of great advantage. The microcontroller can take out the implausible signals, i.e. no longer consider them for the signal averaging.

Claims

1. A sensor device (200) comprising a plurality of individual and separate sensor elements (100), wherein, A single, separate sensor element (100) has a first substrate (42) and a second substrate (12), the first substrate having a micromechanical sensor structure and the second substrate having associated analytical processing circuitry. The first substrate (42) and the second substrate (12) have main extending planes arranged substantially parallel to each other. The first substrate (42) and the second substrate (12) are mechanically and electrically connected to each other, and the first substrate (42) and the second substrate (12) at least partially overlap or form at least partially closed cavities in a direction perpendicular to the main extending planes. The micromechanical sensor structures of the single, separate sensor element (100) are respectively arranged within these cavities. Each of the individual and separate sensor elements (100) functions independently, and the plurality of individual and separate sensor elements (100) of the sensor device (200) are formed monolithically from a portion of a wafer or a portion of a vertically integrated wafer stack, and the sensor device (200) has at least one separation structure between the individual and separate sensor elements (100). The individual and separate sensor elements (100) of the sensor device (200) are mechanically connected to each other only through connections via substrate potentials or electrically connected to each other only through a redistribution plane (20) disposed on the side of the second substrate opposite to the first substrate or disposed on the side of the first substrate opposite to the second substrate. The sensor device (200) is configured in such a way as to analyze and process the single and separate sensor elements (100) of the same type that the arithmetic mean of the measurements of the single and separate sensor elements (100) is calculated, and / or the weighted average of the measurements of the single and separate sensor elements (100) is calculated.

2. The sensor device (200) according to claim 1, characterized in that, The individual and separate sensor elements (100) have vertically integrated wafer stacks, which consist of a first chip device (40) and a second chip device (10): the first chip device includes a micromechanical sensor structure and a first substrate (42); the second chip device includes associated analytical processing circuitry and a second substrate (12).

3. The sensor device (200) according to claim 1 or 2, characterized in that, -The first substrate (42) and the second substrate (12) and / or - First chip device (40) and second chip device (10) Electrically connected to each other by means of through-connection (16), and / or, The first substrate (42) or the second substrate (12) is electrically connected to the outside of the first substrate (42) or the second substrate (12) opposite to the corresponding other substrate by means of a through-hole (16).

4. The sensor device (200) according to claim 1 or 2, characterized in that, The sensor device (200) has an electrical carrier (120) extending substantially parallel to the main extension plane of the first substrate (42) and the second substrate (12), wherein the single and separate sensor element (100) is mechanically connected to the electrical carrier (120).

5. The sensor device (200) according to claim 1 or 2, characterized in that, The rewiring plane (20) has a bonding disk (170).

6. The sensor device (200) according to claim 1 or 2, characterized in that, The individual and separate sensor elements (100) can be individually addressed via a bus system.

7. The sensor device (200) according to claim 1 or 2, characterized in that, The single and separate sensor element (100) or at least a portion thereof is a sensor element of the same type.

8. The sensor device (200) according to claim 1, characterized in that, The separation structure is a cutting line (50).

9. The sensor device (200) according to claim 4, characterized in that, The electrical carrier (120) has printed conductors (150) and / or another rewiring plane.

10. The sensor device (200) according to claim 5, characterized in that, The redistribution plane (20) disposed on the side of the second substrate (12) facing away from the first substrate (42) has a bonding disk (170).

11. The sensor device (200) according to claim 7, characterized in that, The same type of sensor element is an inertial sensor element, a temperature sensor element, a pressure sensor element, or an actuator element.

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