Radiation-emitting semiconductor chip and radiation-emitting semiconductor component

Abstract

A radiation-emitting semiconductor chip (1) is provided, comprising: a semiconductor layer sequence (2), the semiconductor layer sequence having a plurality of active regions (3) and a main extension plane (4), wherein each active region (3) has a main extension direction (5), each active region (3) emits electromagnetic radiation during operation from an emitter region (6) extending parallel to the main extension plane (4), the emitter regions (6) being arranged at grid points (7) of a regular grid, the grid points being connected by at least one grid line (8), and the main extension direction (5) of at least one active region (3) enclosing an angle (11) of at least 10° and at most 80° with the grid lines (8) of the regular grid. In addition, a radiation-emitting semiconductor component having such a semiconductor chip (1) is provided.

Description

Technical Field

[0001] A radiation-emitting semiconductor chip is specified. Furthermore, a radiation-emitting semiconductor component is specified. Summary of the invention

[0002] The object to be achieved is to specify a radiation-emitting semiconductor chip which is particularly efficient. Furthermore, a radiation-emitting semiconductor component having such a semiconductor chip is to be specified.

[0003] The object is achieved by a radiation-emitting semiconductor chip having the features of an exemplary embodiment and by a radiation-emitting semiconductor component having the features of an exemplary embodiment.

[0004] Advantageous embodiments of the radiation-emitting semiconductor chip and of the radiation-emitting semiconductor component are the subject matter of the respective exemplary embodiments.

[0005] According to at least one embodiment, the radiation-emitting semiconductor chip comprises a semiconductor layer sequence having a plurality of active regions and a main extension plane. Particularly preferably, the semiconductor layer sequence is grown epitaxially. The radiation-emitting semiconductor chip is preferably designed to generate near-ultraviolet radiation, visible light and / or near-infrared radiation during operation. The visible light can be, for example, blue, green, yellow or red light.

[0006] The semiconductor layer sequence is preferably based on a compound semiconductor material. If the radiation-emitting semiconductor chip is designed, for example, to emit red light, then the semiconductor layer sequence is preferably based on a III-V compound semiconductor material. A III-V compound semiconductor material is, for example, a phosphide and / or arsenide compound semiconductor material. A III-V compound semiconductor material then comprises, for example, AlGaInP and / or AlGaAs.

[0007] If the radiation-emitting semiconductor chip is designed to emit, for example, blue or green light, the semiconductor layer sequence is preferably based on a III-N compound semiconductor material. The III-N compound semiconductor material is, for example, a nitride compound semiconductor material. The III-N compound semiconductor material then comprises, for example, InGaN and AlGaN.

[0008] The semiconductor layer sequence may contain dopants and additional components. However, for the sake of simplicity, only the main components of the crystal lattice of the semiconductor layer sequence, namely Al, Ga, In, N, As or P, are described, even if these components may be partially replaced and / or supplemented by small amounts of other substances.

[0009] The semiconductor layer sequence preferably extends along a main extension plane. The lateral direction is preferably oriented parallel to the main extension plane. The vertical direction is preferably oriented perpendicular to the lateral direction.

[0010] The active regions are preferably arranged spaced apart from each other in a lateral direction. In this case, the active regions are preferably not in direct contact with each other at any location of the semiconductor chip. In addition, the active regions can be arranged in a common plane, for example, so that the active regions are formed without overlap in a top view.

[0011] Alternatively, it is possible that at least two of the active regions are in direct contact with each other. In this case, at least two active regions are preferably formed overlapping in a top view. In this case, the overlapping active regions can be arranged spaced apart from the remaining overlapping and / or non-overlapping active regions in a lateral direction.

[0012] According to at least one embodiment, each active region has a main extension direction. The main extension direction extends along the length of the active region. The length of the active region preferably corresponds to the maximum extension of the cross section of the active region parallel to the main extension plane. In addition, the active regions each have a width extending perpendicular to the main extension direction. The width of the active region corresponds to the minimum extension of the cross section of the active region in a direction parallel to the main extension plane.

[0013] Preferably, the active region is designed to be straight. That is to say, the side faces of the active region preferably extend parallel to the main extension direction. Alternatively, the active region can be designed to be curved. In this case, the side faces of the active region preferably extend in a curved manner relative to the main extension direction.

[0014] The width of each active region in the lateral direction is preferably between at least 0.2 micrometers and at most 50 micrometers, particularly preferably between at least 3 micrometers and at most 7 micrometers. The length of each active region in the lateral direction is preferably between at least 50 micrometers and at most 1000 micrometers, particularly preferably between 80 micrometers and at most 100 micrometers.

[0015] According to at least one embodiment, each active region emits electromagnetic radiation during operation from an emitter region extending parallel to the main extension plane. Preferably, the emitter regions are each arranged along the main extension direction in a first edge region of the active region.

[0016] Preferably, the emitter regions are separated from one another by non-emitting regions. Preferably, the non-emitting regions are arranged between directly adjacent emitter regions in a plan view. The non-emitting regions emit relatively little or no radiation compared to the emitter regions. The non-emitting regions preferably emit 99% less radiation than the emitter regions.

[0017] The radiation-emitting semiconductor chip preferably comprises a carrier. The semiconductor layer sequence is preferably arranged on the carrier by means of a bottom surface opposite the emitter region. The carrier is preferably designed and configured to mechanically stabilize the semiconductor chip. The carrier is preferably designed to be electrically conductive. The carrier therefore preferably comprises a metal or is formed from a metal. For example, the carrier is galvanically deposited. Advantageously, the heat generated in the active region can thus be removed particularly effectively.

[0018] Alternatively, it is also possible for the carrier to comprise a semiconductor material and / or a dielectric material or to consist of a semiconductor material and / or a dielectric material. For example, the semiconductor material is silicon and the dielectric material is AlN.

[0019] According to at least one embodiment, the emitter regions are arranged at grid points of a regular grid, which are connected by at least one grid line. The regular grid can preferably be a polygonal grid. The grid lines preferably extend parallel to the main extension plane.

[0020] The regular grid is preferably a two-dimensional grid. Alternatively, the regular grid can be a one-dimensional grid. The grid points of the regular grid are arranged along a line in this case. The grid points are preferably arranged on the line with equidistant spacings from each other. Alternatively, it is possible that directly adjacent grid points have different spacings. The line can be a straight line or a curve.

[0021] If the regular grid is, for example, an orthogonal grid, the grid may be a quadrilateral grid. In this case, the regular grid has first grid lines and second grid lines, wherein the first grid lines run parallel to each other and the second grid lines run parallel to each other. Furthermore, the first grid lines are preferably arranged orthogonally to the second grid lines.

[0022] According to at least one embodiment, a main extension direction of at least one active region encloses an angle of at least 10° and at most 80° with the grid lines of the regular grid. That is to say, the main extension direction of the active region preferably does not run parallel to at least one grid line of the regular grid.

[0023] The vertices of the angles are respectively arranged in the emitter region. The sides of the angles are formed by a portion of the main extension direction and a portion of the grid lines, which adjoin the emitter region. The portions of the main extension direction and of the grid lines forming the angles generally extend in a transverse direction in a direction away from the emitter region.

[0024] According to a preferred embodiment, the radiation-emitting semiconductor chip comprises a semiconductor layer sequence having a plurality of active regions and a main extension plane, wherein each active region has a main extension plane. Furthermore, each active region emits electromagnetic radiation during operation from an emitter region extending parallel to the main extension plane. The emitter regions are arranged at grid points of a regular grid, which are connected by at least one grid line. In this embodiment, the main extension direction of at least one active region then encloses an angle of at least 10° and at most 80° with the grid lines of the regular grid.

[0025] According to at least one embodiment, the emitter regions are arranged along rows and columns. If the regular grid is, for example, a two-dimensional orthogonal grid, the rows preferably extend along first grid lines. The columns preferably extend along second grid lines. Preferably, the main extension direction of the active region encloses a first angle of at least 45° and a maximum of 80° with the first grid line, respectively. The main extension direction of the active region encloses a second angle of at least 10° and a maximum of 45° with the second grid line, respectively. Preferably, the first angle and the second angle together form approximately 90°. "Approximately" in this context means in particular that the first angle and the second angle together form at least 75° and a maximum of 105°.

[0026] In a side view along the row, the active regions of a row can be designed to completely overlap. In addition, the active regions of directly adjacent rows preferably partially overlap in a side view along the row. By partially overlapping the active regions of directly adjacent rows, the density of emitter regions per unit area can advantageously be very large.

[0027] In a side view along the row, the active regions of a row can be designed to completely overlap. Active regions of directly adjacent rows can preferably not overlap in a side view along the row. Advantageously, the semiconductor chips can thus be separated, for example, along the row into semiconductor chip bars. The bars produced in this way with a row of active regions are thereby advantageously stackable in the axial direction.

[0028] According to at least one embodiment, the main extension directions of the active regions in at least one row enclose the same angle with the grid lines of the regular grid. Furthermore, the main extension directions of the active regions in at least one column may enclose the same angle with the grid lines of the regular grid.

[0029] Preferably, the main extension direction of the active areas of each row may enclose the same angle with the grid lines of the regular grid. In this case, the main extension direction of the active areas in each column also encloses the same angle with the grid lines of the regular grid. Thereby, all main extension directions of the active areas are preferably arranged parallel to each other.

[0030] According to at least one embodiment, the main extension directions of active regions of different rows and grid lines of the regular grid enclose different angles. In addition, the main extension directions of active regions of different columns may enclose different angles with grid lines of the regular grid.

[0031] According to at least one embodiment, the main extension directions of the active regions in at least one row and the grid lines of the regular grid enclose different angles with each other. In addition, the main extension directions of the active regions in at least one column and the grid lines of the regular grid enclose different angles with each other.

[0032] Furthermore, it is possible that the main extension directions of the active regions of different rows enclose different angles with the grid lines of the regular grid, and that the main extension directions of the active regions in the same row enclose different angles with the grid lines of the regular grid. Thus, the main extension directions of the active regions can be arranged circularly, for example, in a plan view. Furthermore, such circular arrangements can overlap in a plan view.

[0033] According to at least one embodiment, at least two active regions overlap in a top view. The overlapping parts of the overlapping active regions in a top view form a common active region of the at least two overlapping active regions. Preferably, at least two active regions of a common row overlap each other in a top view. It is also feasible that at least two active regions of a common column overlap each other in a top view. In addition, at least two active regions in a common row may overlap each other in a top view and the overlapping active regions may overlap each other in a top view with at least one active region of a directly adjacent row.

[0034] If at least two active regions are designed to overlap, the overlapping region can be spaced apart from the emitter regions of the at least two active regions in a lateral direction, for example. For example, the overlapping region is arranged in the center of the active region in a plan view.

[0035] Advantageously, due to the overlapping of the active regions in plan view, particularly many active regions can be provided per unit area, whereby the density of emitter regions per unit area can advantageously be particularly high.

[0036] According to at least one embodiment, a first reflection surface is provided in the first edge region of each active region, which first reflection surface encloses an angle of at least 35° and at most 55° with the main extension plane. Preferably, the first reflection surface in the first edge region encloses an angle of at least 40° and at most 50° with the main extension plane. Particularly preferably, the angle between the first reflection surface and the main extension plane is approximately 45°.

[0037] The first reflective surface preferably has a reflectivity for electromagnetic radiation of at least 90%, in particular 95%, 99% or 100%.

[0038] The first reflective surface is preferably electrically insulating and comprises, for example, a dielectric material or consists thereof. The first reflective surface is, for example, a Bragg mirror which is composed of alternating layers of materials with a high refractive index and a low refractive index.

[0039] Furthermore, the first reflective surface can be a combination of a metallic material and an electrically insulating material. In this case, the interface between the first reflective surface and the semiconductor layer sequence is preferably formed in an electrically insulating manner.

[0040] According to at least one embodiment, the first edge regions of at least two directly adjacent emitter regions in a row overlap in a top view. It is possible that the first reflection surfaces of at least two directly adjacent emitter regions directly adjoin each other in the overlapping portion of the two active regions. Preferably, the first edge regions of at least the second directly adjacent emitter regions completely overlap each other in the overlapping region.

[0041] Advantageously, the light coupling-out efficiency and the emission characteristic of the radiation-emitting semiconductor chip are thereby improved, since radiation emitted by the active regions is coupled out via overlapping emitter regions and can overlap in the far field.

[0042] In this embodiment, the first reflection surface in the overlapping first edge region can preferably have an angle relative to the main extension plane that is different from 45°, but is between at least 35° and a maximum of 55°. Preferably, the angles of the reflection surfaces are designed to be different in magnitude. Since the emitted electromagnetic radiation of the active regions overlaps in the overlapping emitter regions, angles of the reflection surfaces that are different from 45° can be compensated and the common spectrum of the radiated power advantageously has only a single main peak.

[0043] According to at least one embodiment, a second reflective surface is provided in a second edge region of each active region opposite to the first edge region. The second reflective surface is preferably electrically insulating and, for example, comprises or consists of a dielectric material. The second reflective surface is, for example, a Bragg mirror, which is composed of alternating layers of a material with a high refractive index and a material with a low refractive index.

[0044] Furthermore, the second reflective surface can be a combination of a metallic material and an electrically insulating material. In this case, the interface between the second reflective surface and the semiconductor layer sequence is preferably formed in an electrically insulating manner.

[0045] The second reflective surface preferably has a reflectivity for electromagnetic radiation of at least 90%, in particular 95%, 99% or 100%.

[0046] According to at least one embodiment, the second reflection surface encloses an angle of at least 35° and at most 55° with the main extension plane. Preferably, the second reflection surface in the second edge region encloses an angle of at least 40° and at most 50° with the main extension plane. Particularly preferably, the angle between the second reflection surface and the main extension plane is 45°.

[0047] According to at least one embodiment, the second reflection surfaces are each perpendicular to the main extension plane. The second reflection surfaces preferably each have a deviation of at most 2° with respect to the vertical direction.

[0048] According to at least one embodiment, each active region has an antireflection coating, which is arranged in the first edge region on the semiconductor layer sequence. The antireflection coating is preferably arranged on the top surface of the semiconductor layer sequence and can be in direct contact with it. Preferably, the antireflection coating overlaps the emitter region in each case. Particularly preferably, the antireflection coating completely overlaps the emitter region.

[0049] The reflection at the interface between the top surface of the semiconductor layer sequence and the antireflection coating is, for example, at most 1%, at most 0.0001% or at most 0.00001%.

[0050] According to at least one embodiment, each active region has a reflective coating, which is arranged in the second edge region on the semiconductor layer sequence. Preferably, the reflective coating is arranged on the top surface of the semiconductor layer sequence and can be in direct contact with it. The reflective coating preferably has a reflectivity of at least 90%, at least 95% or at least 99% for the electromagnetic radiation generated by the active region. The reflective coating can thereby be a high-reflectivity coating.

[0051] If the second reflective surfaces are each perpendicular to the main extension plane, the top surface of the semiconductor layer sequence preferably has no reflective coating. Particularly preferably, the radiation-emitting semiconductor chip in this case has no reflective coating.

[0052] Alternatively, it is possible for each active region to have no reflective coating and / or for each active region to have no antireflective coating.

[0053] According to at least one embodiment, each active region comprises a first contact layer, which is arranged on the top surface of the semiconductor layer sequence. The first contact layer is preferably electrically conductive and is designed and provided for electrically contacting the semiconductor layer sequence. The first contact layer is preferably arranged locally on the top surface of the semiconductor layer sequence.

[0054] The first contact layers are preferably arranged spaced apart from one another in a lateral direction on the top surface of the semiconductor layer sequence. Furthermore, the first contact layers each have a width and a length.

[0055] According to one embodiment, the first contact layer is arranged on the covering surface of the semiconductor layer sequence. The first contact layer is preferably formed in a connected manner and covers a large part of the covering surface of the semiconductor layer sequence. The first contact layer preferably does not cover the first edge region and / or the second edge region. The first contact layer preferably covers the semiconductor layer sequence by at least 80% or at least 90%. The first contact layer preferably includes or consists of a metal. In addition, the first contact layer may include a plurality of individual layers.

[0056] Furthermore, the first contact layer can include or consist of a transparent conductive oxide. Transparent conductive oxides (TCO) are transparent, electrically conductive materials, usually metal oxides, such as zinc oxide, tin oxide, aluminum tin oxide, cadmium oxide, titanium oxide, indium oxide and indium tin oxide (ITO).

[0057] According to at least one embodiment, each active region comprises a second contact layer, which is arranged on the bottom surface of the semiconductor layer sequence. The second contact layer is preferably electrically conductive and is designed and arranged for electrically contacting the semiconductor layer sequence. The second contact layer is preferably arranged locally on the bottom surface of the semiconductor layer sequence. The second contact layers are preferably arranged on the bottom surface of the semiconductor layer sequence at intervals from each other in a lateral direction. In addition, the second contact layers each have a width and a length.

[0058] The second contact layer preferably comprises a metal or consists thereof. Furthermore, the second contact layer may comprise a plurality of individual layers. Furthermore, the first contact layer may comprise a transparent conductive oxide or consist thereof.

[0059] The metal of the first contact layer and / or the metal of the second contact layer is, for example, Ti, Pt, Ag and / or Au.

[0060] According to at least one embodiment, the first contact layer and the second contact layer predetermine a lateral dimension of the active area of ​​each active region.

[0061] Preferably, each active region has a first contact layer and a second contact layer, the first contact layer and the second contact layer being opposite to each other. Preferably, the second contact layer and the first contact layer of each active region overlap each other in a top view. In the overlapping region, the current density of the current to be introduced is relatively high. In the overlapping region, the current density is preferably large, so that the active region emits electromagnetic radiation and thus includes an active area. Preferably, the active region has a larger surface than the first contact layer or the second contact layer, by which the active region is preset.

[0062] If the active regions are formed in an overlapping manner, the first contact layers of the active regions formed in an overlapping manner overlap each other in a plan view. In addition, the second contact layers can also overlap each other in a plan view.

[0063] If the active regions are designed without overlapping, the active regions and active zones are preferably controlled individually and separately from one another. If at least two active regions overlap one another, the overlapping active regions are preferably controllable together. Alternatively, it is possible that the first contact layer and / or the second contact layer of the active regions designed to overlap one another do not overlap one another in a plan view. In this case, the overlapping active regions are preferably controllable separately from one another.

[0064] According to one embodiment, the semiconductor layer sequence can respectively include a ridge waveguide in the active region. Each ridge waveguide is preferably formed by a protrusion, which includes a part of the semiconductor layer sequence. The width of the ridge waveguide, which is oriented perpendicular to the main extension direction of the active region, preferably predetermines the width of the active region. The edges of the ridge waveguides can respectively be covered by a passivation layer, which has a refractive index that is different from the refractive index of the semiconductor layer sequence.

[0065] The emitter region does not overlap with the active region in a lateral direction for the most part in a plan view. For example, the emitter region overlaps with the active region in a lateral direction in a plan view by at most 10%. Preferably, the emitter region does not overlap with the active region in a plan view. In this case, the emitter region preferably directly adjoins the active region in a lateral direction in a plan view.

[0066] The idea of ​​the radiation-emitting semiconductor chip described here is, among other things, that the radiation-emitting semiconductor chip has a plurality of active regions which do not extend parallel to the grid lines of a regular grid, on which the emitter regions are arranged, thereby advantageously providing such a semiconductor chip with a particularly high density of emitter regions per unit area.

[0067] Furthermore, the size of the active region is predetermined by the size of the first contact layer and the second contact layer. This makes it possible to dispense with complex etching of the semiconductor layer sequence. Advantageously, non-radiative recombination of charge carriers, which can occur, for example, at etched-away side surfaces of the semiconductor layer sequence, is reduced. As a result, the efficiency of the radiation-emitting semiconductor chip is particularly good.

[0068] According to one embodiment, the radiation-emitting semiconductor chip is a superluminescent diode with increased brightness and / or increased luminous flux relative to conventional light-emitting diodes. The electromagnetic radiation generated by the superluminescent diode (abbreviated as "SLED") can be enhanced in the active region. For example, the electromagnetic radiation propagating in the direction of the second reflection surface can be deflected in the direction of the first reflection surface. The emitted electromagnetic radiation propagating in the direction of the first reflection surface can advantageously overlap with the electromagnetic radiation reflected back from the second reflection surface. The coupled-out electromagnetic radiation is thus enhanced and has increased brightness and / or luminous flux.

[0069] Unlike laser diodes, superluminescent diodes usually do not have a resonator. In combination with superluminescent diodes, electromagnetic radiation is advantageously enhanced, wherein the radiation has a relatively small temporal coherence and a relatively large spatial coherence. As a result, superluminescent diodes have a broader emission spectrum than laser diodes. Advantageously, speckle noise (English: "speckle noise") can be reduced by the relatively broad emission spectrum.

[0070] The electromagnetic radiation preferably propagates in the active region and in the active area along the main extension direction and is directed onto the first reflection surface and coupled out via the emitter region. The coupled-out radiation thus advantageously has a directional emission direction.

[0071] The radiation-emitting semiconductor chip described here can preferably form a display or be used as a radiation source in a display. Furthermore, the radiation-emitting semiconductor chip described here is preferably suitable for near-to-eye applications.

[0072] Furthermore, the radiation-emitting semiconductor chips described here can be used for applications in which a high, for example monochromatic, light density is required on a predetermined surface. In this case, the radiation-emitting semiconductor chips can be used as light sources in projectors or projection machines. In this case, the active regions are usually not individually controllable.

[0073] According to one embodiment, the radiation-emitting semiconductor chip is a laser diode. In this case, the radiation-emitting semiconductor chip is designed to emit laser radiation. Preferably, the laser radiation is emitted via the emitter region. The emitted laser radiation preferably has a relatively large temporal coherence and a relatively large spatial coherence. In this case, the laser radiation is coherent radiation. The radiation emitted by the active region is preferably monochromatic and coherent laser light in this case. The radiation thus advantageously has a relatively small bandwidth at a relatively large light flux.

[0074] By means of the part of the electromagnetic radiation which is reflected at the antireflection coating, the radiation-emitting semiconductor chip can be converted from a superluminescent diode into a laser diode.

[0075] According to one embodiment of the radiation-emitting semiconductor chip, the active regions are arranged in an array. Arranging the active regions in an array means, for example, that the active regions are arranged at grid points of a one-dimensional grid or at grid points of a two-dimensional grid.

[0076] Furthermore, a radiation-emitting semiconductor component is specified, which comprises a radiation-emitting semiconductor chip described here. All features and embodiments disclosed in conjunction with the radiation-emitting semiconductor chip can therefore also be formed in conjunction with the radiation-emitting semiconductor component and vice versa.

[0077] In accordance with at least one embodiment, a radiation-emitting semiconductor component includes a first radiation-emitting semiconductor chip which is formed by a radiation-emitting semiconductor chip described here.

[0078] In accordance with at least one embodiment, the radiation-emitting semiconductor component includes at least one further radiation-emitting semiconductor chip.

[0079] According to at least one embodiment, the first radiation-emitting semiconductor chip is designed to emit electromagnetic radiation in a first wavelength range. Preferably, the electromagnetic radiation is blue, green or red light. The first wavelength range is preferably between 400 nanometers and 490 nanometers, between 490 nanometers and 600 nanometers or between 600 nanometers and 700 nanometers, limit values ​​included.

[0080] In accordance with at least one embodiment, the second radiation-emitting semiconductor chip is designed to emit electromagnetic radiation in a second wavelength range, preferably between 400 nanometers and 490 nanometers, between 490 nanometers and 600 nanometers or between 600 nanometers and 700 nanometers inclusive.

[0081] Preferably, the electromagnetic radiation of the first wavelength range is different from the electromagnetic radiation of the second wavelength range.

[0082] In accordance with at least one embodiment, the second radiation-emitting semiconductor chip is a radiation-emitting semiconductor chip described here.

[0083] According to at least one embodiment, the first radiation-emitting semiconductor chip and the second radiation-emitting semiconductor chip are arranged side by side. Preferably, side surfaces of the first radiation-emitting semiconductor chip and the second radiation-emitting semiconductor chip directly adjoin one another. Furthermore, the top surface and the bottom surface of the first radiation-emitting semiconductor chip and the second radiation-emitting semiconductor chip can each be arranged in a common plane.

[0084] It is further possible that the radiation-emitting semiconductor component has a third radiation-emitting semiconductor chip, which is formed by the radiation-emitting semiconductor chip described here. The third radiation-emitting semiconductor chip is preferably designed to emit electromagnetic radiation in a third wavelength range. The third wavelength range is preferably between 400 nanometers and 490 nanometers, between 490 nanometers and 600 nanometers or between 600 nanometers and 700 nanometers, limit values ​​included.

[0085] Preferably, the electromagnetic radiation of the first wavelength range is different from the electromagnetic radiation of the second wavelength range and from the third wavelength range.

[0086] Preferably, side areas of the second radiation-emitting semiconductor chip and of the third radiation-emitting semiconductor chip directly adjoin one another.Furthermore, the cover areas of the second radiation-emitting semiconductor chip and of the third radiation-emitting semiconductor chip can each be arranged in a common plane.

[0087] For example, a first radiation-emitting semiconductor chip may be designed to emit red electromagnetic radiation, a second radiation-emitting semiconductor chip may be designed to emit green electromagnetic radiation, and a third radiation-emitting semiconductor chip may be designed to emit blue electromagnetic radiation. The first radiation-emitting semiconductor chip, the second radiation-emitting semiconductor chip, and the third radiation-emitting semiconductor chip may preferably be arranged side by side.

[0088] Furthermore, the radiation-emitting semiconductor component may include a plurality of first radiation-emitting semiconductor chips, a plurality of second radiation-emitting semiconductor chips and a plurality of third radiation-emitting semiconductor chips. The first, second and third semiconductor chips may be arranged alternately alongside one another.

[0089] Alternatively, the second radiation-emitting semiconductor chip is arranged on the first radiation-emitting semiconductor chip. Preferably, the second radiation-emitting semiconductor chip is arranged on the cover surface of the first radiation-emitting semiconductor chip. In this case, the emitter region of the first radiation-emitting semiconductor chip and the emitter region of the second radiation-emitting semiconductor chip overlap in a plan view. The emitter region of the second radiation-emitting semiconductor chip is preferably arranged downstream of the emitter region of the first radiation-emitting semiconductor chip in the vertical direction.

[0090] According to at least one embodiment, the radiation-emitting semiconductor component comprises a plurality of second radiation-emitting semiconductor chips. The second radiation-emitting semiconductor chips are preferably light emitting diode chips, or LED chips for short.

[0091] According to at least one embodiment, the second radiation-emitting semiconductor chip is arranged on the first radiation-emitting semiconductor chip. Preferably, the second radiation-emitting semiconductor chip is arranged on the cover surface of the first radiation-emitting semiconductor chip. Particularly preferably, the second radiation-emitting semiconductor chip is also arranged on the emitter region. In this case, the first radiation-emitting semiconductor chip is designed to emit red light and the second radiation-emitting semiconductor chip is designed to emit blue or green light. Preferably, the light of the first semiconductor chip can pass through the second radiation-emitting semiconductor chip essentially undisturbed. BRIEF DESCRIPTION OF THE DRAWINGS

[0092] A radiation-emitting semiconductor chip and a radiation-emitting semiconductor component are explained in more detail below with reference to the drawings on the basis of exemplary embodiments.

[0093] In the attached figure

[0094] Figure 1 a schematic diagram showing a plan view of a radiation-emitting semiconductor chip according to one embodiment,

[0095] Figure 2 a schematic diagram showing a plan view of a radiation-emitting semiconductor chip according to one embodiment,

[0096] Figure 3 shows a schematic sectional view of a radiation-emitting semiconductor chip according to one exemplary embodiment,

[0097] Figure 4 shows a schematic sectional view of a radiation-emitting semiconductor chip according to one exemplary embodiment,

[0098] Figure 5 shows an exemplary measurement of a far field of electromagnetic radiation of a radiation-emitting semiconductor chip according to one embodiment, and

[0099] Figure 6 An exemplary infrared microscope picture is shown in a plan view of an emitter region of a semiconductor chip that emits IR radiation.

[0100] Identical, similar or identically functioning elements are provided with the same reference numerals in the drawings. The drawings and the size relationships of the elements shown in the drawings to one another are not to be regarded as being true to scale. Rather, individual elements may be shown exaggeratedly for better visibility and / or for better understanding. DETAILED DESCRIPTION

[0101] Figure 1 The schematic diagram of EMBODIMENT 1 shows an exemplary embodiment of a radiation-emitting semiconductor chip 1 described here, which comprises a semiconductor layer sequence 2 having a plurality of active regions 3 and a main plane of extension 4 .

[0102] The active regions 3 are arranged spaced apart from one another in a lateral direction and do not directly contact one another at any point. Each active region 3 has a main extension direction 5 which extends along the length of the active region 3 .

[0103] In this exemplary embodiment, the width of the active region 3 in the lateral direction is, for example, 5 micrometers. The length of the active region 3 in the lateral direction is, for example, 100 micrometers.

[0104] During operation, each active region 3 emits electromagnetic radiation from an emitter region 6 extending parallel to the main extension plane 4. The emitter region 6 is arranged in each case along the main extension direction 5 in a first edge region 12 of the active region 3. A second edge region 14 is arranged opposite the first edge region 12. The first edge region 12 is arranged in Figure 1 The second edge region 14 is indicated by a white circle in Figure 1 Indicated by black circle.

[0105] The emitter regions 6 are arranged at grid points 7 of a regular grid, which are connected by at least one grid line 8. According to this embodiment, the regular grid is an orthogonal two-dimensional grid. The regular grid has a first grid line 8a and a second grid line 8b. The first grid line 8a is orthogonal to the second grid line 8b.

[0106] The main extension direction 5 of the active region 3 here respectively has a first angle 11a of approximately 65° with the first grid line 8a. According to this embodiment, the main extension direction 5 of the active region 3 respectively encloses a second angle 11b of approximately 25° with the second grid line 8b. The first angle 11a and the second angle 11b are thus approximately 90°.

[0107] The emitter regions 6 are thus arranged along columns 9 and rows 10. The rows 10 extend here along the first grid lines 8a. The columns 9 extend along the second grid lines 8b.

[0108] The main extension directions 5 of the active regions 3 of each row 10 enclose the same first angle 11a with the first grid lines 8a of the regular grid. Thus, the main extension directions 5 of the active regions 3 in each column 9 enclose the same second angle 11b with the second grid lines 8b of the regular grid. This means that all main extension directions 5 of the active regions 3 are arranged parallel to one another.

[0109] The active regions 3 of a row 10 are designed to completely overlap in a side view along the row 10. Furthermore, the active regions 3 of a directly adjacent row 10 partially overlap in a side view along the row 10. Furthermore, the active regions 3 of a column 9 are designed to completely overlap in a side view along the column 9. The active regions 3 of directly adjacent columns 9 do not overlap in a side view along the column 9.

[0110] The second edge region 14 is arranged on another grid point of the other regular grid. The other regular grid is moved relative to the regular grid by a translation vector. That is to say, without the translation vector, the regular grid and the other regular grid are consistent.

[0111] according to Figure 2 An exemplary embodiment of a radiation-emitting semiconductor chip 1 described here is shown in which the active regions 3 overlap one another in plan view. Directly adjacent active regions 3 of a common row 10 overlap here and overlap with active regions 3 of directly adjacent columns 9. The overlapping regions in plan view each form a common active region.

[0112] Furthermore, in a plan view, two first edge regions 12 of two directly adjacent emitter regions 6 in a row 10 overlap in each case. In this case, two directly adjacent emitter regions 6 completely overlap one another and form a common emitter region.

[0113] The common transmitter regions are arranged at grid points 7 of a regular grid, which are connected by at least one grid line 8. In this case, the regular grid is an orthogonal grid, similar to Figure 1 Embodiment of the invention.

[0114] and Figure 1 In contrast to the exemplary embodiment of FIG. 1 , the second edge region 14 is arranged at further grid points of a further regular grid, which can be oriented differently from the regular grid.

[0115] Alternatively, according to Figure 2 A radiation-emitting component may be described, which comprises a first radiation-emitting semiconductor chip and a second radiation-emitting semiconductor chip. The second radiation-emitting semiconductor chip is, for example, arranged on the first radiation-emitting semiconductor chip. The first radiation-emitting semiconductor chip is in this case arranged downstream of the second radiation-emitting semiconductor chip. The emitter region of the first radiation-emitting semiconductor chip and the emitter region of the second radiation-emitting semiconductor chip overlap in a top view.

[0116] exist Figure 3 , an exemplary embodiment of an active region 3 is shown along a main extension direction of a radiation-emitting semiconductor chip 1 described here, which has a semiconductor layer sequence 2 including the active region 3 .

[0117] A first reflection surface 13 is arranged in the first edge region 12 , wherein the angle between the first reflection surface 13 and the main extension plane is approximately 45°. Furthermore, an antireflection coating 16 is arranged on the top surface of the semiconductor layer sequence 2 in the first edge region 12 .

[0118] A second reflection surface 15 is arranged in the second edge region 14 , wherein the angle between the second reflection surface 15 and the main extension plane is approximately 45°. Furthermore, a reflective coating 17 is arranged on the top surface of the semiconductor layer sequence 2 in the second edge region 14 .

[0119] A second contact layer 19 is arranged on the top surface of the semiconductor layer sequence 2 along the main extension direction 5 between the antireflection coating 16 and the reflective coating 17. A first contact layer 18 is arranged on the opposite bottom surface of the semiconductor layer sequence 2 along the main extension direction 5. The lateral dimensions of the active region 20 of the active region 3 are predetermined by the first contact layer 18 and the second contact layer 19.

[0120] According to Figure 3 The arrows shown in the figure show the propagation direction of the electromagnetic radiation. The electromagnetic radiation generated in the active region 20 respectively forms a beam with a beam profile, which has a lateral and vertical expansion in a cross section perpendicular to the main extension direction 5 of the active region 3. The electromagnetic radiation propagating in the direction of the second reflection surface 15 is deflected in the direction of the first reflection surface 13 by means of the reflective coating 17 and the re-reflection at the second reflection surface 15. The emitted electromagnetic radiation propagating in the direction of the first reflection surface 13 overlaps with the radiation reflected on the second reflection surface 15. The electromagnetic radiation of the active region 20 that overlaps in this way overlaps and couples out in the region of the anti-reflection coating 16. The coupled-out radiation is therefore enhanced and has an increased brightness and an increased luminous flux.

[0121] Combined with Figure 3 According to the embodiments of Figure 4 The active region 3 of the semiconductor chip 1 has no reflective coating 17. In addition, the second reflection surface 15 is arranged perpendicular to the main extension plane 4. As a result, electromagnetic radiation propagating in the direction of the second reflection surface 15 is deflected directly at the second reflection surface 15 in the direction of the first reflection surface 13. The beam profile of the coupled-out electromagnetic radiation has, for example, an aperture angle which is predetermined by the material system used for the semiconductor chip 1. When using the AlGaN material system, the aperture angle is typically approximately 34°.

[0122] In this exemplary embodiment, no antireflection coating 16 is arranged on the top surface of the semiconductor layer sequence 2 .

[0123] according to Figure 1 , 2 The radiation-emitting semiconductor chips 1 of the exemplary embodiments of , 3 and 4 are each designed as superluminescent diodes.

[0124] exist Figure 5 In the diagram, a measurement of the far field of the electromagnetic radiation of a single active region of the radiation-emitting semiconductor chip described here is plotted, wherein the normalized radiated power L of the radiation in arbitrary units is expressed asnorm Plotted against the polar coordinate θ in degrees [°]. The measured radiated power of the radiation in the far field is generated by a single active region.

[0125] Preferably, the radiation in the far field has a fast axis and a slow axis. In the far field, the radiation propagates in space as a plane wave. The vibration direction of the radiation in which the plane wave has the greatest propagation velocity is called the "fast axis", and the vibration direction perpendicular to the fast axis and having a smaller velocity is called the "slow axis".

[0126] Normalized radiated power L norm It is measured along the fast axis and has a full width at half maximum (FWHM) of, for example, 32°.

[0127] exist Figure 6 0 shows a plan view of a radiation-emitting semiconductor chip in the region of a single emitter region. By means of the width B of the first contact, the slow axis can be predetermined.

[0128] This application claims the priority of German patent application 10 2019 106 805.3, the disclosure content of which is incorporated herein by reference.

[0129] The invention is not restricted to the description based on the exemplary embodiments. Rather, the invention includes any novel features and any combination of features, which in particular includes any combination of features in the claims, even if the feature or the combination itself is not described in detail in the claims or exemplary embodiments.

[0130] List of reference numerals:

[0131] 1 Radiation-emitting semiconductor chip

[0132] 2 Semiconductor layer sequence

[0133] 3 Active area

[0134] 4 Main extension plane

[0135] 5 Main extension direction

[0136] 6 Transmitter Area

[0137] 7 Grid Points

[0138] 8 Grid Lines

[0139] 8a First grid line

[0140] 8b Second grid line

[0141] 9 columns

[0142] 10 rows

[0143] 11 Angle

[0144] 11a First Angle

[0145] 11b Second Angle

[0146] 12First Marginal Area

[0147] 13. First reflection surface

[0148] 14 Second Marginal Area

[0149] 15 Second reflection surface

[0150] 16 Anti-reflective coating

[0151] 17Reflective coating

[0152] 18 First contact layer

[0153] 19 Second contact layer

[0154] 20 Active Area

[0155] L norm Radiated power

[0156] B Width

[0157] Θ Polar coordinates

Claims

1. A radiation-emitting semiconductor chip (1), comprising: A semiconductor layer sequence (2) having a plurality of active regions (3) and a main extension plane (4), wherein - each active region (3) has a main extension direction (5), - each active region (3) emits electromagnetic radiation during operation from an emitter region (6) extending parallel to the main extension plane (4), - at least two active regions (3) overlap in plan view, - the emitter areas (6) are arranged at grid points (7) of a regular grid, the grid points being connected by at least one grid line (8), and The main extension direction (5) of at least one active region (3) encloses an angle of at least 10° and at most 80° with the grid lines (8) of the regular grid.

2. The radiation-emitting semiconductor chip (1) as claimed in claim 1, The emitter regions (6) are arranged along columns (9) and rows (10).

3. The radiation-emitting semiconductor chip (1) as claimed in claim 2, The main extension directions (5) of the active regions (3) in at least one row (10) enclose the same angle (11) with the grid lines (8) of the regular grid.

4. The radiation-emitting semiconductor chip (1) as claimed in claim 2 or 3, The main extension directions (5) of the active regions (3) of different rows (10) enclose different angles (11) with the grid lines (8) of the regular grid.

5. The radiation-emitting semiconductor chip (1) as claimed in claim 2, The main extension direction (5) of the active regions in at least one row (10) encloses different angles (11) with the grid lines (8) of the regular grid.

6. The radiation-emitting semiconductor chip (1) as claimed in claim 1, A first reflection surface (13) is arranged in a first edge region (12) of each active region (3), said first reflection surface enclosing an angle of at least 35° and at most 55° with the main extension plane (4).

7. The radiation-emitting semiconductor chip (1) as claimed in claim 6, The first edge regions (12) of at least two directly adjacent emitter regions (6) in one row (10) overlap in a plan view.

8. The radiation-emitting semiconductor chip (1) as claimed in claim 6, A second reflection surface (15) is provided in a second edge region (14) of each active region (3) which is opposite to the first edge region (12).

9. The radiation-emitting semiconductor chip (1) as claimed in claim 8, The second reflection surface (15) encloses an angle of at least 35° and at most 55° with the main extension plane (4).

10. The radiation-emitting semiconductor chip (1) as claimed in claim 8, The second reflecting surfaces (15) are respectively perpendicular to the main extension planes (4).

11. The radiation-emitting semiconductor chip (1) as claimed in claim 8, wherein - each active region (3) has an antireflection coating (16), which is arranged in the first edge region (12) on the semiconductor layer sequence (2), and Each active region (3) has a reflective coating (17) which is arranged on the semiconductor layer sequence (2) in the second edge region (14).

12. The radiation-emitting semiconductor chip (1) as claimed in claim 1, wherein each active region (3) comprises a first contact layer (18) which is arranged on a top surface of the semiconductor layer sequence (2), - each active region (3) comprises a second contact layer (19) which is arranged on the bottom side of the semiconductor layer sequence (2), and The first contact layer (18) and the second contact layer (19) predetermine the lateral dimensions of the active area (20) of each active region (3).

13. The radiation-emitting semiconductor chip (1) as claimed in claim 1, The radiation-emitting semiconductor chip (1) is a superluminescent diode which has an increased brightness and / or an increased luminous flux compared to conventional light-emitting diodes.

14. The radiation-emitting semiconductor chip (1) as claimed in claim 1, The radiation-emitting semiconductor chip (1) is a laser diode.

15. The radiation-emitting semiconductor chip (1) as claimed in claim 13, The active areas (3) are arranged in an array.

16. A radiation emitting semiconductor device having: a first radiation-emitting semiconductor chip, which is a radiation-emitting semiconductor chip according to any one of claims 1 to 15, and at least one second radiation-emitting semiconductor chip, wherein the first radiation-emitting semiconductor chip is designed to emit electromagnetic radiation in a first wavelength range, and The second radiation-emitting semiconductor chip is designed to emit electromagnetic radiation in a second wavelength range.

17. The radiation-emitting semiconductor component according to claim 16, wherein the second radiation-emitting semiconductor chip is a radiation-emitting semiconductor chip (1) according to any one of claims 1 to 12, and The first radiation-emitting semiconductor chip and the second radiation-emitting semiconductor chip are arranged alongside one another.

18. The radiation-emitting semiconductor component according to claim 17, The semiconductor component comprises a plurality of second radiation-emitting semiconductor chips, In this case, the second radiation-emitting semiconductor chip is arranged on the first radiation-emitting semiconductor chip.

19. A radiation-emitting semiconductor chip (1) comprising: A semiconductor layer sequence (2) having a plurality of active regions (3) and a main extension plane (4), wherein - each active region (3) has a main extension direction (5), - each active region (3) emits electromagnetic radiation during operation from an emitter region (6) extending parallel to the main extension plane (4), - the emitter areas (6) are arranged at grid points (7) of a regular grid, the grid points being connected by at least one grid line (8), - a main extension direction (5) of at least one active region (3) encloses an angle of at least 10° and at most 80° with the grid lines (8) of the regular grid, - a first reflection surface (13) is arranged in a first edge region (12) of each active region (3), said first reflection surface enclosing an angle of at least 35° and at most 55° with the main extension plane (4), - a second reflection surface (15) is arranged in a second edge region (14) of each active region (3) which is opposite to the first edge region (12), and The second reflection surface (15) encloses an angle of at least 35° and at most 55° with the main extension plane (4).

Images