Leveling method and semiconductor structure

Abstract

The embodiment of the present invention discloses a leveling method and a semiconductor structure, the method comprising providing a substrate including a curved structure, one side of the substrate having a barrier layer; forming an isolation layer having an opening on the barrier layer, the opening exposing the barrier layer of the curved structure; and performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the exposed barrier layer. On the one hand, the flatness of the substrate after being treated by the leveling method of the embodiment of the present invention is better. On the other hand, the leveling method of the embodiment of the present invention can adjust a substrate with complex deformation, and has the advantages of simple operation, flexibility and wide application range.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a leveling method and a semiconductor structure. Background Art

[0002] After the wafer is formed, it will be warped. However, the related art has not proposed a good solution to the warping of the wafer, which in turn affects the processing of the chip. Summary of the invention

[0003] The embodiment of the present invention provides a leveling method capable of solving the problem of wafer warping and deformation.

[0004] An embodiment of the present invention further provides a semiconductor structure manufactured by using the above-mentioned leveling method.

[0005] The leveling method according to an embodiment of the present invention comprises:

[0006] Providing a substrate including a curved structure, wherein one side of the substrate has a barrier layer;

[0007] forming an isolation layer having an opening on the barrier layer, wherein the opening exposes the barrier layer of the curved structure;

[0008] The exposed barrier layer is subjected to hydrogen ion overflow and / or hydrogen ion implantation treatment.

[0009] According to some embodiments of the present invention, the exposed barrier layer is subjected to hydrogen ion overflow and / or hydrogen ion implantation treatment, comprising:

[0010] The barrier layer on the convex side of the curved structure is subjected to a hydrogen ion spillover treatment.

[0011] According to some embodiments of the present invention, the barrier layer located on the convex side of the curved structure is subjected to a hydrogen ion spillover treatment, comprising:

[0012] The barrier layer of the curved structure is irradiated with laser.

[0013] According to some embodiments of the present invention, performing a hydrogen ion spillover treatment on the barrier layer located on the convex side of the curved structure further comprises:

[0014] The processing temperature is greater than 1100°C.

[0015] According to some embodiments of the present invention, the exposed barrier layer is subjected to hydrogen ion overflow and / or hydrogen ion implantation treatment, comprising:

[0016] A hydrogen ion implantation process is performed on the barrier layer located on the concave side of the bent structure.

[0017] According to some embodiments of the present invention, the barrier layer located at the concave side of the curved structure is subjected to a hydrogen ion implantation process, comprising:

[0018] The barrier layer of the curved structure is bombarded with ions.

[0019] According to some embodiments of the present invention, the step of performing a hydrogen ion implantation process on the barrier layer located on the concave side of the curved structure further comprises:

[0020] The processing temperature is between 500°C and 700°C.

[0021] According to some embodiments of the present invention, a material of the barrier layer includes silicon oxide or silicon oxynitride.

[0022] According to some embodiments of the present invention, a material of the isolation layer includes silicon nitride or silicon carbonitride.

[0023] According to some embodiments of the present invention, there is provided a substrate including a curved structure, one side of the substrate having a barrier layer, comprising:

[0024] Providing an original silicon wafer, wherein the original silicon wafer comprises a warpage structure;

[0025] The barrier layer is formed on the original silicon wafer, and the barrier layer covers the warped structure to form the bent structure.

[0026] According to some embodiments of the present invention, after the exposed barrier layer is subjected to hydrogen ion overflow and / or hydrogen ion implantation treatment, the method further comprises:

[0027] The barrier layer is removed.

[0028] According to some embodiments of the present invention, there is provided a substrate including a curved structure, one side of the substrate having a barrier layer, comprising:

[0029] providing a substrate;

[0030] forming the barrier layer on the substrate;

[0031] The curved structure is formed after the substrate and the barrier layer are subjected to a temperature reduction treatment.

[0032] According to some embodiments of the present invention, the substrate is a semiconductor substrate.

[0033] According to some embodiments of the present invention, the method further comprises:

[0034] The isolation layer is removed.

[0035] The semiconductor structure of the embodiment of the present invention is manufactured by using any of the above-mentioned leveling methods.

[0036] An embodiment of the above invention has at least the following advantages or beneficial effects:

[0037] The leveling method of the embodiment of the present invention uses an opening to expose the curved structure, and the barrier layer of the curved structure is subjected to hydrogen ion overflow and / or hydrogen ion implantation, so that the leveling method of this embodiment can adjust the local area of ​​the substrate. On the one hand, the flatness of the substrate treated by the leveling method of the embodiment of the present invention is better. On the other hand, the leveling method of the embodiment of the present invention can adjust substrates with complex deformations, and has the advantages of simple operation, flexibility and wide application range. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 Shown is a flow chart of a leveling method according to an embodiment of the present invention.

[0039] FIG. 2A to FIG. 2C Shown is a schematic diagram of the principle of adjusting flatness using hydrogen ion overflow.

[0040] FIG. 3A to FIG. 3C The schematic diagram shows the principle of adjusting the flatness by hydrogen ion implantation.

[0041] Figures 4A to 4C FIG. 1 is a schematic diagram showing the leveling method of the present invention for leveling a substrate of the first embodiment.

[0042] FIG. 5A to FIG. 5C FIG. 1 is a schematic diagram showing the leveling method of the present invention for leveling a substrate of the second embodiment.

[0043] FIG. 6A to FIG. 6C FIG. 1 is a schematic diagram showing the leveling method of the present invention for leveling a substrate in the third embodiment.

[0044] FIG. 7A to FIG. 7C FIG. 1 is a schematic diagram showing a substrate of a fourth embodiment of the leveling method of the present invention being leveled.

[0045] FIG. 8A to FIG. 8C FIG. 1 is a schematic diagram showing a substrate of a fifth embodiment of the leveling method of the present invention.

[0046] The reference numerals are described as follows:

[0047] 11. Hydrogen ions 12. Pores

[0048] 100, substrate 101, curved structure

[0049] 110, barrier layer 200, isolation layer

[0050] 210, Opening F1, Tension

[0051] F2. Thrust DETAILED DESCRIPTION

[0052] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present invention will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their detailed description will be omitted.

[0053] like Figure 1 As shown, Figure 1 The flowchart of the leveling method according to the embodiment of the present invention is shown. The leveling method according to the embodiment of the present invention comprises:

[0054] Step S102: providing a substrate 100 including a curved structure 101, wherein one side of the substrate 100 has a barrier layer 110;

[0055] Step S104: forming an isolation layer 200 having an opening 210 on the barrier layer 110 , wherein the opening 210 exposes the barrier layer 110 of the curved structure 101 ;

[0056] Step S106 : performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the exposed barrier layer 110 to level the curved structure 101 .

[0057] The leveling method of the embodiment of the present invention, by using the opening 210 to expose the curved structure 101, and the barrier layer 110 of the curved structure 101 is subjected to hydrogen ion overflow and / or hydrogen ion implantation, enables the leveling method of the embodiment to adjust the local area of ​​the substrate 100. On the one hand, the flatness of the substrate 100 processed by the leveling method of the embodiment of the present invention is better. On the other hand, the leveling method of the embodiment of the present invention can adjust the substrate 100 with complex deformation, and has the advantages of simple operation, flexibility and wide application range.

[0058] The principle of adjusting the flatness by hydrogen ion overflow / injection in an embodiment of the present invention is described below with reference to the accompanying drawings.

[0059] like FIG. 2A to FIG. 2C As shown, FIG. 2A to FIG. 2C The schematic diagram shows the principle of using hydrogen ion overflow to adjust the flatness. Figure 2A As shown, hydrogen ions 11 in the material overflow. Figure 2B As shown in FIG. 1 , after the hydrogen ions 11 overflow, a large number of pores 12 appear in the material. Figure 2C As shown in the figure, after a large amount of H2 is discharged, the material will shrink, thereby forming an inward pulling force F1.

[0060] like FIG. 3A to FIG. 3C As shown, FIG. 3A to FIG. 3C The schematic diagram shows the principle of using hydrogen ion implantation to adjust the flatness. Figure 3A As shown, there are pores 12 in the material. Figure 3B As shown, hydrogen ions 11 are injected and occupy the existing pores 12 in the material. Figure 3C As shown, since hydrogen ions 11 are injected into the material, the original HX bonds in the material are decomposed, and HH bonds to form H2, which causes the material to expand and form an outward thrust F2. Among them, X represents other ions in the material that were originally bonded with hydrogen ions.

[0061] As mentioned above, when the material is subjected to hydrogen ion overflow treatment, an inward pulling force F1 can be formed in the material. When the material is subjected to hydrogen ion implantation treatment, an outward thrust F2 can be formed in the material. Then, the leveling method of the embodiment of the present invention utilizes the inward pulling force F1 to process the convex side of the curved structure 101, and utilizes the outward thrust F2 to process the concave side of the curved structure 101, and finally realizes the leveling of the substrate 100.

[0062] like Figures 4A to 4C As shown, Figures 4A to 4C FIG. 1 is a schematic diagram showing the leveling method of the present invention for leveling a substrate of the first embodiment.

[0063] like Figure 4A As shown, a substrate 100 including a curved structure 101 is provided, and a barrier layer 110 is provided on one side of the substrate 100. The barrier layer 110 covers the convex side of the curved structure 101.

[0064] It is understood that the material of the barrier layer 110 may include silicon oxide, silicon oxynitride or other suitable insulating barrier materials.

[0065] Furthermore, the number of layers of the barrier layer 110 on one side of the substrate 100 may be one or more layers, wherein multiple layers refer to two or more layers. When the barrier layer 110 is multiple layers, the materials of each barrier layer 110 may be the same or different. For example, the material of one barrier layer 110 includes silicon oxide, and the material of another barrier layer 110 includes silicon oxynitride.

[0066] like Figure 4B As shown, an isolation layer 200 having an opening 210 is formed on the barrier layer 110, and the opening 210 exposes the bent structure 101. The barrier layer 110 of the bent structure 101 is subjected to a hydrogen ion overflow treatment.

[0067] In this embodiment, since the barrier layer 110 of the curved structure 101 is subjected to hydrogen ion overflow treatment, an inward pulling force F1 can be formed in the barrier layer 110, thereby ultimately achieving a leveling effect.

[0068] In one embodiment, the material of the isolation layer 200 may include silicon nitride, silicon carbonitride or other suitable materials. It should be noted that the isolation layer 200 needs to have the characteristics of being able to block the diffusion of hydrogen ions and not reacting with the barrier layer 110 .

[0069] In one embodiment, the barrier layer 110 of the curved structure 101 is subjected to a hydrogen ion spillover treatment, comprising:

[0070] The barrier layer 110 of the curved structure 101 is irradiated with laser.

[0071] In one embodiment, the barrier layer 110 of the curved structure 101 is subjected to a hydrogen ion overflow treatment, further comprising:

[0072] The processing temperature is greater than 1100°C.

[0073] like Figure 4C As shown, under the action of the pulling force F1, a substrate 100 with better flatness is obtained. In addition, the isolation layer 200 is removed.

[0074] It should be noted that the barrier layer 110 may be removed or retained according to the requirements of subsequent processes.

[0075] like FIG. 5A to FIG. 5C As shown, FIG. 5A to FIG. 5C FIG. 1 is a schematic diagram showing the leveling method of the present invention for leveling a substrate of the second embodiment.

[0076] like Figure 5A As shown, a substrate 100 including a curved structure 101 is provided, and a barrier layer 110 is provided on one side of the substrate 100. The barrier layer 110 covers the concave side of the curved structure 101.

[0077] It is understood that the material of the barrier layer 110 may include silicon oxide, silicon oxynitride or other suitable insulating barrier materials.

[0078] Furthermore, the number of layers of the barrier layer 110 on one side of the substrate 100 may be one or more layers, wherein multiple layers refer to two or more layers. When the barrier layer 110 is multiple layers, the materials of each barrier layer 110 may be the same or different. For example, the material of one barrier layer 110 includes silicon oxide, and the material of another barrier layer 110 includes silicon oxynitride.

[0079] like Figure 5B As shown, an isolation layer 200 having an opening 210 is formed on the barrier layer 110, and the opening 210 exposes the bent structure 101. The barrier layer 110 of the bent structure 101 is subjected to hydrogen ion implantation.

[0080] In this embodiment, since the barrier layer 110 of the curved structure 101 is subjected to hydrogen ion implantation, an outward thrust F2 can be formed in the barrier layer 110, thereby ultimately achieving a leveling effect.

[0081] In one embodiment, the material of the isolation layer 200 may include silicon nitride, silicon carbonitride or other suitable materials. It should be noted that the isolation layer 200 needs to have the characteristics of being able to block the diffusion of hydrogen ions and not reacting with the barrier layer 110 .

[0082] In one embodiment, the barrier layer 110 of the curved structure 101 is subjected to a hydrogen ion implantation process, comprising:

[0083] The barrier layer 110 of the curved structure 101 is bombarded with ions.

[0084] In one embodiment, the barrier layer 110 of the curved structure 101 is subjected to hydrogen ion implantation, further comprising:

[0085] The processing temperature is between 500°C and 700°C.

[0086] like Figure 5C As shown, under the action of the thrust F2, a substrate 100 with better flatness is obtained. In addition, the isolation layer 200 is removed.

[0087] It should be noted that the barrier layer 110 may be removed or retained according to the requirements of subsequent processes.

[0088] As shown FIG. 6A to FIG. 6C As shown, FIG. 6A to FIG. 6C The schematic diagram of the leveling method of the present invention for leveling the substrate of the third embodiment is shown. In this embodiment, the substrate 100 includes a plurality of curved structures 101. Since the convex sides and the concave sides of the plurality of curved structures 101 are arranged adjacent to each other, the substrate 100 of this embodiment generally forms a wavy warped structure.

[0089] like Fig. 6A As shown, a substrate 100 including a curved structure 101 is provided, and a barrier layer 110 is provided on one side of the substrate 100. The barrier layer 110 covers the convex side and the concave side of the curved structure 101.

[0090] It is understood that the material of the barrier layer 110 may include silicon oxide, silicon oxynitride or other suitable insulating barrier materials.

[0091] Furthermore, the number of layers of the barrier layer 110 on one side of the substrate 100 may be one or more layers, wherein multiple layers refer to two or more layers. When the barrier layer 110 is multiple layers, the materials of each barrier layer 110 may be the same or different. For example, the material of one barrier layer 110 includes silicon oxide, and the material of another barrier layer 110 includes silicon oxynitride.

[0092] like Figure 6B As shown, an isolation layer 200 having an opening 210 is formed on the barrier layer 110, and the opening 210 exposes the bent structure 101. The barrier layer 110 of the bent structure 101 is subjected to hydrogen ion overflow and hydrogen ion implantation processes.

[0093] Specifically, the convex side of the curved structure 101 is subjected to hydrogen ion overflow treatment, and the concave side of the curved structure 101 is subjected to hydrogen ion implantation treatment. Since an inward pulling force F1 can be formed in the barrier layer 110 on the convex side, and an outward pushing force F2 can be formed in the barrier layer 110 on the concave side, a leveling effect is finally achieved.

[0094] In one embodiment, the material of the isolation layer 200 may include silicon nitride, silicon carbonitride or other suitable materials. It should be noted that the isolation layer 200 needs to have the characteristics of being able to block the diffusion of hydrogen ions and not reacting with the barrier layer 110 .

[0095] In one embodiment, the barrier layer 110 of the curved structure 101 is subjected to a hydrogen ion overflow treatment, including: irradiating the barrier layer 110 of the curved structure 101 with a laser, and the treatment temperature is greater than 1100° C.

[0096] The barrier layer 110 of the curved structure 101 is subjected to hydrogen ion implantation, including: bombarding the barrier layer 110 of the curved structure 101 with ions, and the treatment temperature is between 500° C. and 700° C.

[0097] like Figure 6C As shown, under the action of the pulling force F1 and the pushing force F2, a substrate 100 with better flatness is obtained. In addition, the isolation layer 200 is removed.

[0098] It should be noted that the barrier layer 110 may be removed or retained according to the requirements of subsequent processes.

[0099] like FIG. 7A to FIG. 7C , FIG. 7A to FIG. 7C The schematic diagram of the leveling method of the present invention for leveling a substrate of the fourth embodiment is shown. In this embodiment, the substrate 100 includes two bending structures 101, which are located at two ends of the substrate 100 and generally form a saddle-shaped warping structure.

[0100] like Fig. 7A As shown, a substrate 100 including a curved structure 101 is provided, and one side of the substrate 100 has a barrier layer 110. The barrier layer 110 covers two convex sides of the two curved structures 101.

[0101] It is understood that the material of the barrier layer 110 may include silicon oxide, silicon oxynitride or other suitable insulating barrier materials.

[0102] Furthermore, the number of layers of the barrier layer 110 on one side of the substrate 100 may be one or more layers, wherein multiple layers refer to two or more layers. When the barrier layer 110 is multiple layers, the materials of each barrier layer 110 may be the same or different. For example, the material of one barrier layer 110 includes silicon oxide, and the material of another barrier layer 110 includes silicon oxynitride.

[0103] like Figure 7B As shown, an isolation layer 200 having an opening 210 is formed on the barrier layer 110, and the opening 210 exposes the bent structure 101. The barrier layer 110 of the bent structure 101 is subjected to a hydrogen ion overflow treatment.

[0104] In this embodiment, since the barrier layer 110 of the curved structure 101 is subjected to hydrogen ion overflow treatment, an inward pulling force F1 can be formed in the barrier layer 110, thereby ultimately achieving a leveling effect.

[0105] In one embodiment, the material of the isolation layer 200 may include silicon nitride, silicon carbonitride or other suitable materials. It should be noted that the isolation layer 200 needs to have the characteristics of being able to block the diffusion of hydrogen ions and not reacting with the barrier layer 110 .

[0106] In one embodiment, the barrier layer 110 of the curved structure 101 is subjected to a hydrogen ion spillover treatment, comprising:

[0107] The barrier layer 110 of the curved structure 101 is irradiated with laser.

[0108] In one embodiment, the barrier layer 110 of the curved structure 101 is subjected to a hydrogen ion overflow treatment, further comprising:

[0109] The processing temperature is greater than 1100°C.

[0110] like Figure 7C As shown, under the action of the pulling force F1, a substrate 100 with better flatness is obtained. In addition, the isolation layer 200 is removed.

[0111] It should be noted that the barrier layer 110 may be removed or retained according to the requirements of subsequent processes.

[0112] like FIG. 8A to FIG. 8C , FIG. 8A to FIG. 8C The schematic diagram of the leveling method of the present invention for leveling the substrate of the fifth embodiment is shown. In this embodiment, the substrate 100 includes two bending structures 101, which are located at two ends of the substrate 100 and roughly form a warping structure in the shape of an inverted saddle.

[0113] like Fig. 8AAs shown, a substrate 100 including a curved structure 101 is provided, and a barrier layer 110 is provided on one side of the substrate 100. The barrier layer 110 covers two concave sides of the two curved structures 101.

[0114] It is understood that the material of the barrier layer 110 may include silicon oxide, silicon oxynitride or other suitable insulating barrier materials.

[0115] Furthermore, the number of layers of the barrier layer 110 on one side of the substrate 100 may be one or more layers, wherein multiple layers refer to two or more layers. When the barrier layer 110 is multiple layers, the materials of each barrier layer 110 may be the same or different. For example, the material of one barrier layer 110 includes silicon oxide, and the material of another barrier layer 110 includes silicon oxynitride.

[0116] like Figure 8B As shown, an isolation layer 200 having an opening 210 is formed on the barrier layer 110, and the opening 210 exposes the bent structure 101. The barrier layer 110 of the bent structure 101 is subjected to hydrogen ion implantation.

[0117] In this embodiment, since the barrier layer 110 of the curved structure 101 is subjected to hydrogen ion implantation, an outward thrust F2 can be formed in the barrier layer 110, thereby ultimately achieving a leveling effect.

[0118] In one embodiment, the material of the isolation layer 200 may include silicon nitride, silicon carbonitride or other suitable materials. It should be noted that the isolation layer 200 needs to have the characteristics of being able to block the diffusion of hydrogen ions and not reacting with the barrier layer 110 .

[0119] In one embodiment, the barrier layer 110 of the curved structure 101 is subjected to a hydrogen ion implantation process, comprising:

[0120] The barrier layer 110 of the curved structure 101 is bombarded with ions.

[0121] In one embodiment, the barrier layer 110 of the curved structure 101 is subjected to hydrogen ion implantation, further comprising:

[0122] The processing temperature is between 500°C and 700°C.

[0123] like Figure 8C As shown, under the action of the thrust F2, a substrate 100 with better flatness is obtained. In addition, the isolation layer 200 is removed.

[0124] It should be noted that the barrier layer 110 may be removed or retained according to the requirements of subsequent processes.

[0125] In one embodiment, a step of providing a substrate 100 including a curved structure 101, wherein one side of the substrate 100 has a barrier layer 110, comprises:

[0126] Providing an original silicon wafer, the original silicon wafer comprising a warpage structure;

[0127] A barrier layer 110 is formed on the original silicon wafer, and the barrier layer 110 covers the warped structure to form the bent structure 101 .

[0128] In this embodiment, it is specifically defined that the generation of the curved structure 101 in the substrate 100 occurs on the original silicon wafer. Specifically, after the original silicon wafer is formed, the original silicon wafer has a pre-existing warped structure. Afterwards, a barrier layer 110 is formed on the original silicon wafer, thereby forming the substrate 100 including the curved structure 101. Finally, the substrate 100 can be leveled according to the scheme disclosed in the above embodiment, which will not be repeated here.

[0129] Furthermore, when the curved structure 101 of the substrate 100 is generated on an original silicon wafer, after hydrogen ion overflow and / or hydrogen ion implantation treatment is performed on the barrier layer 110 of the curved structure 101 , the leveling method of the embodiment of the present invention further includes: removing the barrier layer 110 .

[0130] Specifically, since the original silicon wafer has not yet been subjected to subsequent semiconductor processing, the barrier layer 110 may be removed after the leveling process to facilitate subsequent processing of the original silicon wafer.

[0131] In another embodiment, a step of providing a substrate 100 including a curved structure 101, wherein one side of the substrate 100 has a barrier layer 110, comprises:

[0132] providing a substrate;

[0133] forming a barrier layer 110 on a substrate;

[0134] The curved structure 101 is formed by cooling the substrate and the barrier layer 110 .

[0135] In this embodiment, it is specifically defined that the generation of the curved structure 101 in the substrate 100 occurs after the wafer is completed. Specifically, during the cooling process of the substrate and the barrier layer 110, for example, the temperature drops from 400° C. to 25° C., the substrate and the barrier layer 110 will have thermal mismatch, which will lead to warping deformation.

[0136] Furthermore, the substrate is a semiconductor substrate.

[0137] In some embodiments, the semiconductor substrate may include a variety of doping configurations. For example, different doping profiles (such as n-type wells or p-type wells) may be formed in regions on the substrate that are designed for different device types (such as n-type multi-gate transistors or p-type multi-gate transistors). Suitable doping methods may include ion implantation of dopants and / or diffusion processes. The substrate may have isolation structures sandwiched between regions to provide different device types. The substrate may also include other semiconductors such as germanium, silicon carbide, silicon germanium, or diamond. The substrate may instead include semiconductor compounds and / or semiconductor alloys. In addition, the substrate may optionally include an epitaxial layer (which may have stress to enhance performance), may include a silicon-on-insulator structure, and / or may have other suitable enhancement structures.

[0138] Another aspect of the present invention provides a semiconductor structure manufactured by the leveling method of any of the above embodiments.

[0139] In some embodiments, the semiconductor structure may include additional transistors, bipolar junction transistors, resistors, capacitors, inductors, diodes, fuses, static random access memories, and / or other logic circuits.

[0140] In summary, the advantages and beneficial effects of the leveling method and semiconductor structure of the embodiments of the present invention include at least:

[0141] The leveling method of the embodiment of the present invention, by using the opening 210 to expose the curved structure 101, and the barrier layer 110 of the curved structure 101 is subjected to hydrogen ion overflow and / or hydrogen ion implantation, enables the leveling method of the embodiment to adjust the local area of ​​the substrate 100. On the one hand, the flatness of the substrate 100 processed by the leveling method of the embodiment of the present invention is better. On the other hand, the leveling method of the embodiment of the present invention can adjust the substrate 100 with complex deformation, and has the advantages of simple operation, flexibility and wide application range.

[0142] In the embodiments of the invention, the terms "first", "second", and "third" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance; the term "plurality" refers to two or more, unless otherwise clearly defined. The terms "installed", "connected", "connected", "fixed", etc. should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; "connected" can be a direct connection or an indirect connection through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the invention can be understood according to the specific circumstances.

[0143] In the description of the embodiments of the invention, it is necessary to understand that the directions or positional relationships indicated by the terms "up", "down", "left", "right", "front", "back", etc. are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the invention and simplifying the description, rather than indicating or implying that the device or unit referred to must have a specific direction, be constructed and operated in a specific orientation, and therefore, cannot be understood as a limitation on the embodiments of the invention.

[0144] In the description of this specification, the description of the terms "one embodiment", "some embodiments", "specific embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the invention embodiment. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0145] The above are only preferred embodiments of the invention embodiments, and are not intended to limit the invention embodiments. For those skilled in the art, the invention embodiments may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the invention embodiments shall be included in the protection scope of the invention embodiments.

Claims

1. A leveling method, characterized in that: include: Providing a substrate including a curved structure, wherein one side of the substrate has a barrier layer; forming an isolation layer having an opening on the barrier layer, wherein the opening exposes the barrier layer of the curved structure; as well as Performing hydrogen ion overflow and / or hydrogen ion implantation treatment on the exposed barrier layer; The material of the barrier layer includes silicon oxide or silicon oxynitride.

2. The leveling method according to claim 1, characterized in that: The exposed barrier layer is subjected to hydrogen ion overflow and / or hydrogen ion implantation treatment, comprising: The barrier layer on the convex side of the curved structure is subjected to a hydrogen ion spillover treatment.

3. The leveling method according to claim 2, characterized in that: The barrier layer on the convex side of the curved structure is subjected to a hydrogen ion overflow treatment, comprising: The barrier layer of the curved structure is irradiated with laser.

4. The leveling method according to claim 3, characterized in that: The step of performing a hydrogen ion overflow treatment on the barrier layer located on the convex side of the curved structure further comprises: The processing temperature is greater than 1100°C.

5. The leveling method according to claim 1, characterized in that: The exposed barrier layer is subjected to hydrogen ion overflow and / or hydrogen ion implantation treatment, comprising: A hydrogen ion implantation process is performed on the barrier layer located on the concave side of the bent structure.

6. The leveling method according to claim 5, characterized in that: Performing a hydrogen ion implantation process on the barrier layer located on the concave side of the curved structure, comprising: The barrier layer of the curved structure is bombarded with ions.

7. The leveling method according to claim 6, characterized in that: Performing a hydrogen ion implantation process on the barrier layer located on the concave side of the curved structure, further comprising: The processing temperature is between 500°C and 700°C.

8. The leveling method according to claim 1, characterized in that: The material of the isolation layer includes silicon nitride or silicon carbonitride.

9. The leveling method according to claim 1, characterized in that: A substrate including a curved structure is provided, wherein one side of the substrate has a barrier layer, comprising: Providing an original silicon wafer, wherein the original silicon wafer comprises a warpage structure; The barrier layer is formed on the original silicon wafer, and the barrier layer covers the warped structure to form the bent structure.

10. The leveling method according to claim 9, characterized in that: After performing hydrogen ion overflow and / or hydrogen ion implantation on the exposed barrier layer, the method further comprises: The barrier layer is removed.

11. The leveling method according to claim 1, characterized in that: A substrate including a curved structure is provided, wherein one side of the substrate has a barrier layer, comprising: providing a substrate; forming the barrier layer on the substrate; The curved structure is formed after the substrate and the barrier layer are subjected to a temperature reduction treatment.

12. The leveling method according to claim 11, characterized in that: The substrate is a semiconductor substrate.

13. The leveling method according to claim 1, characterized in that: The method further comprises: The isolation layer is removed.

14. A semiconductor structure, characterized in that: The method is manufactured by the leveling method as described in any one of claims 1 to 13.

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