Probe calibration method, surface measurement method, and probe control device
Through multiple measurements of probe arrays and reference probe calibration methods, the problems of slow measurement speed and fatigue drift of probe arrays in the chip industry are solved, and efficient and accurate nano-scale surface measurement and real-time calibration are achieved.
Patent Information
- Application Number
- CN202111566555.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-12-20
- Publication Date
- 2025-01-10
- Estimated Expiration
- 2041-12-20
AI Technical Summary
In the chip industry, existing measurement technologies cannot meet the resolution and speed requirements of nano-scale surface measurements. In particular, probe arrays are prone to fatigue and drift during the measurement process, resulting in deviations in measurement results, and existing calibration methods are cumbersome. Influence measurement efficiency.
By controlling multiple probes to perform multiple measurements on the target surface, the height information of each probe is obtained, and the height difference value of each probe is calibrated according to the height difference value with the reference probe is updated in real time to avoid fatigue and drift Effect on measurement results.
Improves the accuracy and efficiency of measurement results, simplifies the calibration process, eliminates the need to replace the surface to be operated, and improves the measurement accuracy and operational convenience of the probe array.
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Figure CN114088979B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of control technology, and in particular to a probe calibration method, a surface measurement method and a probe control device. Background Art
[0002] In the chip industry, the miniaturization of chip devices has always been an important research direction. The manufacture of chips with 5-nanometer technology nodes has been achieved, and the manufacture of chips with 3-nanometer technology nodes has been successfully developed. However, the measurement technology of the chip industry is far behind. Not only are the detection methods insufficient, but the speed of achieving nano-level surface measurement is often very slow, which cannot meet the level of online detection or even random inspection in the chip industry.
[0003] Existing optical ellipsometer detection technology can detect the three-dimensional structure of the wafer surface with a vertical resolution of less than 1 nanometer, and it is fast and can be used for online detection. However, the lateral resolution still remains at the sub-micron level and cannot meet the measurement resolution requirements.
[0004] Scanning probe microscope (Fcanning Probe MicroFcope, referred to as FPM) can measure sub-nanometer longitudinal and lateral resolution, especially three-dimensional structures of several nanometers to tens of nanometers. However, its measurement speed is very slow. It is estimated that it takes at least 30 days to fully measure a chip (DIE) on a wafer. One of the main reasons for the slow measurement speed is that the probe must be only a few nanometers to tens of nanometers away from the surface to measure the nanoscale three-dimensional morphology. In order to avoid the probe colliding with the three-dimensional structure of the surface to be measured and affecting the measurement accuracy, the probe must move at an extremely slow speed during the measurement process.
[0005] Probe technology can be used to measure physical quantities such as surface conductivity, surface photoresist residue, distribution of different components on the surface, etc.
[0006] The tip of the probe is very thin, with a radius of curvature of only 2 nanometers, or even just one atom at its tip. Applying a very small voltage to the probe, such as 50V, can cause the tip of the probe to have a very high electric field strength. At this time, the electrons at the tip of the needle can be easily pulled out, forming electric field emission at the tip of the probe. The electrons emitted by the electric field formed by the tip of the probe can be used to sensitize the photoresist to form electron beam lithography, also called scanning probe lithography (FPL Fcanning probe lithography).
[0007] The advantage of scanning probe lithography is that the lithography lines are very fine, which is very suitable for exposing single nanometer-level fine line structures. The reason for this is that in addition to the very small probe tip emitting electrons to form a single nanometer-level electron beam spot, the energy of the emitted electrons is very low, making it difficult to form a major problem of electron beam lithography, namely the proximity effect. Without the proximity effect, the problem of widening the photosensitive range after electron beam exposure is eliminated, resulting in the probe electron beam size directly determining the photosensitive area of the photoresist, forming a single nanometer-level lithography line width.
[0008] However, the probe tips in the probe array will fatigue and drift in the height direction during the measurement process, resulting in deviations in the subsequent measurement results; if the probe tips in the probe array are calibrated during the test, the calibration wafer needs to be replaced, which is cumbersome, affects the measurement process, and reduces the measurement efficiency. Therefore, in order to solve the above technical problems, the inventors proposed the technical solution of the present invention. Summary of the invention
[0009] The purpose of the present invention is to provide a probe calibration method, a surface measurement method and a probe control device. In the process of measuring the surface to be operated using multiple probes, the height information obtained by measuring the corresponding area of the probes other than the reference probe can be calibrated according to the height difference between each probe and a reference probe in the height direction, so as to avoid deviations in the measurement results caused by probe fatigue and drift.
[0010] To achieve the above-mentioned purpose, the present invention provides a probe calibration method, comprising: controlling multiple probes to perform multiple measurements on multiple areas on a target surface, and obtaining height information obtained by each probe measuring the corresponding area in each measurement; during the multiple measurements, each probe and an adjacent probe measure the same area on the target surface; for each probe, comparing the height information obtained by the probe and the target probe measuring the same area, and determining the height difference between the probe and the target probe in the height direction; the target probe is a probe adjacent to the probe; selecting any one of the probes as a reference probe, and based on the height difference between each probe and the corresponding target probe in the height direction, obtaining the height difference between each probe and the reference probe in the height direction.
[0011] The present invention also provides a surface measurement method, comprising: controlling multiple probes in a probe device to measure multiple areas of a surface to be operated, and obtaining height information of the areas measured by each probe; calibrating the height information measured by each probe based on the height difference in height direction between each probe and a reference probe among the multiple probes; wherein the height difference in height direction between each probe and the reference probe is obtained based on the probe calibration method described in any one of claims 1 to 6; and obtaining the measurement result of the surface to be operated based on the height information of each calibrated probe.
[0012] The present invention also provides a probe control device, comprising: a probe device and a probe control system communicatively connected to the probe device; the probe device is provided with a plurality of probes; the probe control system is used for the above-mentioned probe calibration method and / or the above-mentioned surface measurement method.
[0013] In the embodiment of the present invention, in the process of measuring the surface to be operated using multiple probes, the height information obtained by measuring the corresponding area of the probes other than the reference probe can be calibrated according to the height difference between each probe and the reference probe in the height direction, so as to avoid deviation of the measurement result caused by probe fatigue and drift; the probe calibration method can be carried out during the working process of the probe, and the height difference between each probe and the reference probe in the height direction can be updated in real time to improve the accuracy of the measurement result, and there is no need to change the current surface to be operated, which is more convenient to operate, and the real-time and efficiency of the calibration are better.
[0014] In one embodiment, the multiple probes form a one-dimensional probe array; controlling the multiple probes to perform multiple measurements on multiple areas on the target surface includes: controlling the multiple probes to measure multiple areas on the target surface at multiple measurement positions, each measurement position differing from the next measurement position by one area of the target surface in a preset direction, and the preset direction is the arrangement direction of the probes in the one-dimensional probe array.
[0015] In one embodiment, the multiple probes form a two-dimensional probe array; controlling the multiple probes to perform multiple measurements on multiple areas on the target surface includes: controlling the multiple probes to measure multiple areas on the target surface at multiple measurement positions, at least one measurement position differs from an adjacent next measurement position by one area on the target surface in the length direction of the two-dimensional probe array, and at least one measurement position differs from an adjacent next measurement position by one area on the target surface in the width direction of the two-dimensional probe array.
[0016] In one embodiment, for each of the probes, the height information obtained by measuring the same area between the probe and the target probe is compared to determine the height difference between the probe and the target probe in the height direction, including: for each of the probes, according to the height information obtained by measuring the same area between the probe and the target probe, respectively calculating the height values of the probe and the target probe in the height direction; calculating the difference between the height value of the probe and the height value of the target probe as the height difference between the probe and the target probe in the height direction.
[0017] In one embodiment, the height information of the probe includes the height value between the probe and each pixel point in the measured area, and the height value of the probe in the height direction is the average of the height values between the probe and each pixel point in the measured area.
[0018] In one embodiment, the height information of the probe includes the height value between the probe and each pixel point in the measured area, and the height value of the probe in the height direction is the height value between the probe and a preset pixel point in the measured area.
[0019] In one embodiment, the target surface area is any one of the following: a pixel point, a line formed by a plurality of pixel points, and a surface composed of a plurality of pixel points. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 A flowchart of a probe calibration method according to a first embodiment of the present invention;
[0021] Figure 2 A flowchart of a probe calibration method according to a second embodiment of the present invention;
[0022] Figures 3 to 6 is a schematic diagram of measuring a target surface by a one-dimensional probe array according to a second embodiment of the present invention;
[0023] Figure 7 A flowchart of a probe calibration method according to a third embodiment of the present invention;
[0024] Figures 8 to 10 is a schematic diagram of measuring a target surface by a two-dimensional probe array according to a third embodiment of the present invention;
[0025] Fig.11 is a flow chart of a probe calibration method according to a fourth embodiment of the present invention;
[0026] Fig.12 is a flow chart of a surface measuring method according to a fifth embodiment of the present invention. DETAILED DESCRIPTION
[0027] The following will be described in detail with reference to the accompanying drawings to provide a clearer understanding of the purpose, features and advantages of the present invention. It should be understood that the embodiments shown in the accompanying drawings are not intended to limit the scope of the present invention, but are only intended to illustrate the essential spirit of the technical solution of the present invention.
[0028] In the following description, certain specific details are set forth for the purpose of illustrating various disclosed embodiments to provide a thorough understanding of the various disclosed embodiments. However, those skilled in the relevant art will recognize that the embodiments may be practiced without one or more of these specific details. In other cases, well-known devices, structures, and techniques associated with the present application may not be shown or described in detail to avoid unnecessarily obscuring the description of the embodiments.
[0029] Unless the context requires otherwise, throughout the specification and claims, the word "comprise" and variations such as "include" and "have" should be construed in an open, inclusive sense, ie, should be interpreted as "including, but not limited to."
[0030] References throughout the specification to "one embodiment" or "an embodiment" indicate that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of "in one embodiment" or "in an embodiment" in various places throughout the specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any manner in one or more embodiments.
[0031] As used in this specification and the appended claims, the singular forms "a", "an", and "" include plural referents unless the context clearly dictates otherwise. It should be noted that the term "or" is generally employed in its sense including "or / and" unless the context clearly dictates otherwise.
[0032] In the following description, in order to clearly show the structure and working mode of the present invention, many directional words will be used for description, but the words "front", "back", "left", "right", "outside", "inside", "outward", "inward", "up", "down", etc. should be understood as convenient terms and should not be understood as restrictive terms.
[0033] The first embodiment of the present invention relates to a probe calibration method, which is applied to a probe control system. The probe control system can be a computer host, a laptop computer, etc. The probe control system can use the probe calibration method in this embodiment to calibrate the multiple probes included in the probe array of the probe device in the height direction. The probe device is used to perform operation processing on the surface to be operated, and the processing of the surface to be operated includes: measuring the physical and chemical quantities of the surface of the wafer to be operated, scanning probe lithography (SPL), generating electrons, generating photons, and using the probe to introduce ions to perform ion implantation on the surface to be operated. Wherein, the physical quantities and chemical quantities involved include but are not limited to: electrical information, mechanical information, magnetic information, optical information, acoustic information and material composition, such as three-dimensional morphology measurement, surface roughness measurement, surface conductivity measurement, surface material composition measurement, surface temperature measurement, surface hardness measurement, surface elastic modulus measurement, surface emission light measurement, surface luminescence measurement, surface Raman signal measurement, etc.; scanning probe lithography is to add a voltage (such as 50V) to the probe to form an electric field with high electric field strength at the probe tip, at which time the electrons at the tip are easily pulled out to form an electric field emission at the probe end, thereby using the electrons emitted by the electric field formed by the probe tip to photosensitively form electron beam lithography on the photoresist, and the electrons emitted by the probe can generate secondary electrons on the surface to be operated. Wherein, the surface to be operated can be a silicon wafer, a glass sheet, a quartz sheet, a wafer or a printed circuit board, etc.
[0034] The specific process of the probe calibration method of this embodiment is as follows Figure 1 shown.
[0035] Step 101, control multiple probes to perform multiple measurements on multiple areas on the target surface, and obtain height information of the corresponding area measured by each probe during each measurement; during the multiple measurement processes, each probe and the adjacent probe measure the same area on the target surface.
[0036] Specifically, the target surface is divided into multiple areas, each of which includes at least one pixel point; the probe control system controls multiple probes to perform multiple scanning measurements on the multiple areas on the target surface. Each time the probe array is controlled to perform scanning measurements on the target surface (for example, atomic force microscopy image measurement), each probe on the probe array corresponds to an area on the target surface, and scans and measures the corresponding area to obtain the height information obtained by the probe measuring the area, and the height information can represent the height value of the probe tip relative to each pixel point in the area. For each probe on the probe device, during the multiple measurements, the probe and the adjacent probe complete the work of scanning and measuring the same area on the target surface, and the height information of the area obtained by the probe and the probe adjacent to the probe for measuring the same area can be obtained. Wherein, the area on the target surface is any one of the following: a pixel point, a line formed by multiple pixel points, and a surface composed of multiple pixel points; that is, the area on the target surface can be divided according to pixel points, and each pixel point is a region; or, the area on the target surface is divided according to lines, and each area is a line formed by multiple adjacent pixel points; or, the area on the target surface is divided according to surfaces, and each area is a surface formed by multiple adjacent pixel points. It should be noted that, in this embodiment and the following embodiments, the region is described as a surface formed by a plurality of pixels.
[0037] Step 102 : for each probe, compare the height information obtained by measuring the same area between the probe and the target probe to determine the height difference between the probe and the target probe in the height direction; the target probe is a probe adjacent to the probe.
[0038] Specifically, taking any probe in the probe array as an example, the probe adjacent to the probe is recorded as the target probe, and the probe and the target probe measure the same area on the target surface, and then compare the height information obtained by measuring the area with the target probe to determine the height difference between the probe and the target probe in the height direction; if there are multiple adjacent probes around the probe, the height difference between the adjacent probes of the probe in the height direction can be obtained. In this way, the height difference between each probe and the adjacent probe in the height direction can be obtained.
[0039] Step 103 : selecting any probe as a reference probe, and obtaining the height difference between each probe and the reference probe in the height direction based on the height difference between each probe and the corresponding target probe in the height direction.
[0040] Specifically, any probe in the probe device is selected as the reference probe. For each probe in the probe array except the reference probe, the probe spaced between the probe and the reference probe is obtained based on the arrangement of the probes in the probe array. Then, the height difference between the probe and the reference probe and the height difference between each probe in the probe array and the corresponding target probe in the height direction can be obtained. Thus, the height difference between each probe in the probe array and the reference probe in the height direction can be obtained. Subsequently, in the process of measuring the target surface, the reference probe is used as the standard, and based on the height difference between each probe and the reference probe in the height direction, the height information obtained by measuring the corresponding area of each probe is calibrated.
[0041] The present embodiment provides a probe calibration method, which first controls multiple probes to perform multiple measurements on multiple areas on a target surface, and obtains height information obtained by each probe measuring the corresponding area during each measurement. During the multiple measurements, each probe and an adjacent probe measure the same area on the target surface; for each probe among the multiple probes, the height information obtained by measuring the same area with the adjacent target probe is compared to determine the height difference between the probe and the target probe in the height direction; thereby, the height difference between each probe and the corresponding target probe in the height direction can be obtained; then, any probe among the multiple probes is used as a reference probe, and based on the height difference between each probe and the adjacent target probe, the height difference between the probe and the target probe in the height direction is determined. The height difference of the corresponding target probe in the height direction is obtained, and the height difference of each probe and the reference probe in the height direction is obtained. Therefore, in the process of using multiple probes to measure the surface to be operated, the height information obtained by measuring the corresponding area of the probes other than the reference probe can be calibrated according to the height difference of each probe and the reference probe in the height direction, so as to avoid the deviation of the measurement result caused by probe fatigue and drift; the probe calibration method can be carried out during the working process of the probe, and the height difference of each probe and the reference probe in the height direction is updated in real time, so as to improve the accuracy of the measurement result, and there is no need to change the current surface to be operated, which is more convenient to operate, and the real-time performance and efficiency of the calibration are better.
[0042] The second embodiment of the present invention relates to a probe calibration method. The main difference between this embodiment and the first embodiment is that this embodiment provides a specific implementation method for controlling multiple probes to perform multiple measurements on multiple areas on a target surface when multiple probes form a one-dimensional probe array.
[0043] The specific process of the probe calibration method of this embodiment is as follows Figure 2 shown.
[0044] Step 201, control multiple probes to measure multiple areas of the target surface at multiple measurement positions, and obtain height information of the corresponding area measured by each probe during each measurement; each measurement position differs from the next measurement position by one area of the target surface in a preset direction, and the preset direction is the probe arrangement direction in the one-dimensional probe array.
[0045] For more information, see Figure 3 The probe array includes a 1x4 one-dimensional probe array formed by 4 probes (the probes are represented by the tips of the probes in the figure), namely probe C1, probe C2, probe C3 and probe C4; the target surface includes 4 areas (Field), namely area F1, area F2, area F3 and area F4; in this embodiment, controlling the 4 probes to scan and measure the target surface at two test positions is taken as an example. At the first test position, please refer to Figure 3 and Figure 4 , probe C1 measures area F1, probe C2 measures area F2, probe C3 measures area F3, and probe C4 measures area F4, thereby obtaining height information H measured by probe C1 on area F1 C1F1 , the height information H obtained by probe C2 on area F2 C2F2 , the height information H obtained by the probe C3 on the area F3 C3F3 , the height information H obtained by probe C4 on area F4 C4F4 ; Then control the probe array to translate an area of the target surface to the right to reach the second test position, please refer to Figure 5 and Figure 6 , probe C1 measures area F2, probe C2 measures area F3, probe C3 measures area F4, and probe C4 does not measure in this round, thereby obtaining the height information H obtained by probe C1 measuring area F2 C1F2 , the height information H obtained by probe C2 on area F3 C2F3 , the height information H obtained by the probe C3 on the area F4 C3F4 .
[0046] Step 202 : for each probe, compare the height information obtained by measuring the same area between the probe and the target probe to determine the height difference between the probe and the target probe in the height direction; the target probe is a probe adjacent to the probe.
[0047] Specifically, continuing the above example, for probe C1, its corresponding target probe is probe C2. The height information H obtained by measuring area F2 by probe C1 is C1F2 The height information H obtained by measuring the area F2 with probe C2 C2F2By comparison, the height difference △H between probe C1 and probe C2 in the height direction is obtained. C1C2 ; For probe C2, its corresponding target probes are probe C1 and probe C3, but the height difference between probe C1 and probe C2 in the height direction is △H C1C2 The calculation has been completed. Now it is only necessary to convert the height information H obtained by measuring area F3 by probe C2 into C2F3 The height information H obtained by measuring the area F3 with probe C3 C3F3 By comparison, the height difference △H between probe C2 and probe C3 in the height direction is obtained. C2C3 Similarly, for probe C3, the height information H obtained by measuring area F4 by probe C3 is C3F4 The height information H obtained by measuring the area F4 with probe C4 C4F4 By comparison, the height difference △H between probe C3 and probe C4 in the height direction is obtained. C3C4 .
[0048] Step 203 : selecting any probe as a reference probe, and obtaining the height difference between each probe and the reference probe in the height direction based on the height difference between each probe and the corresponding target probe in the height direction.
[0049] Specifically, continuing the above example, taking probe C1 as the reference probe, the height difference between probe C2 and reference probe C1 in the height direction is △H C1C2 , the height difference between probe C3 and reference probe C1 in the height direction △H C1C3 =△H C1C2 +△H C2C3 , the height difference between probe C4 and reference probe C1 in the height direction △H C1C4 =△H C1C2 +△H C2C3 +△H C3C4 .
[0050] The third embodiment of the present invention relates to a probe calibration method. The main difference between this embodiment and the first embodiment is that this embodiment provides a specific implementation method for controlling multiple probes to perform multiple measurements on multiple areas on a target surface when multiple probes form a two-dimensional probe array.
[0051] The specific process of the probe calibration method of this embodiment is as follows Figure 7 shown.
[0052] Step 301, control multiple probes to measure multiple areas of a target surface at multiple measurement positions, there is at least one measurement position that differs from an adjacent next measurement position by one area on the target surface in the length direction of the two-dimensional probe array, and there is at least one measurement position that differs from an adjacent next measurement position by one area on the target surface in the width direction of the two-dimensional probe array.
[0053] For more information, see Figure 8 The probe array includes a 3x3 two-dimensional probe array formed by 9 probes (Cantilever) (the probes are represented by the tips of the probes in the figure), namely probes C1 to C9; the target surface includes 9 areas (Field), each area is represented by the center of each area, X1 to X4 represent the horizontal coordinates, Y1 to Y4 represent the vertical coordinates, and the 9 areas are area F11 (X1, Y1), area F12 (X1, Y2), ..., area F44 (X4, Y4).
[0054] In this embodiment, the control of 4 probes to scan and measure the target surface at three test positions is taken as an example. At the first test position, please refer to Figure 8 , probe C1 measures area F11, probe C2 measures area F21, probe C3 measures area F31, and so on, probe C9 measures area F33, thereby obtaining the height information H obtained by probe C1 measuring area F11 C1F11 , the height information H obtained by the probe C2 on the area F21 C2F21 , the height information H obtained by the probe C3 on the area F31 C3F31 , the height information H obtained by the probe C4 on the area F12 C4F12 , the height information H obtained by the probe C5 on the area F22 C5F22 , the height information H obtained by the probe C6 on the area F32 C6F32 , the height information H obtained by the probe C7 on the area F13 C7F13 , the height information H obtained by the probe C8 on the area F23 C8F23 , the height information H obtained by the probe C9 on the area F33 C9F33 .
[0055] The probe array is then controlled to translate rightward from the first test position to a region of the target surface to the second test position, see Fig. 9 , probe C1 measures area F21, probe C2 measures area F31, probe C3 measures area F41, and so on, probe C9 measures area F43, thereby obtaining the height information H obtained by probe C1 measuring area F21 C1F21, the height information H obtained by the probe C2 on the area F31 C2F31 , the height information H obtained by the probe C3 on the area F41 C3F41 , the height information H obtained by the probe C4 on the area F22 C4F22 , the height information H obtained by the probe C5 on the area F32 C5F32 , the height information H obtained by the probe C6 on the area F42 C6F42 , the height information H obtained by the probe C7 on the area F23 C7F23 , the height information H obtained by the probe C8 on the area F33 C8F33 , the height information H obtained by the probe C9 measuring the area F43 C9F43 .
[0056] The probe array is then controlled to translate an area of the target surface upward from the second test position to the third test position, see Fig.10 , probe C1 measures area F22, probe C2 measures area F32, probe C3 measures area F42, and so on, probe C9 measures area F44, thereby obtaining the height information H obtained by probe C1 measuring area F22 C1F22 , the height information H obtained by the probe C2 on the area F32 C2F32 , the height information H obtained by the probe C3 on the area F42 C3F42 , the height information H obtained by the probe C4 on the area F23 C4F23 , the height information H obtained by the probe C5 on the area F33 C5F33 , the height information H obtained by the probe C6 on the area F43 C6F43 , the height information H obtained by the probe C7 on the area F24 C7F24 , the height information H obtained by the probe C8 on the area F34 C8F34 , the height information H obtained by the probe C9 on the area F44 C9F44 .
[0057] Step 302 : for each probe, compare the height information obtained by measuring the same area between the probe and the target probe to determine the height difference between the probe and the target probe in the height direction; the target probe is a probe adjacent to the probe.
[0058] Specifically, continuing the above example, for probe C1, its corresponding target probes are probe C2 and probe C4. The height information H obtained by measuring area F21 by probe C1 is C1F21 The height information H obtained by measuring the area F21 with probe C2 C2F21 By comparison, the height difference △H between probe C1 and probe C2 in the height direction is obtained.C1C2 , the height information H obtained by measuring the area F22 with probe C1 C1F22 The height information H obtained by measuring the area F22 with probe C4 C4F22 By comparison, the height difference △H between probe C1 and probe C2 in the height direction is obtained. C1C4 .
[0059] For probe C2, its corresponding target probes are probe C1, probe C3 and probe C5. The height difference △H between probe C1 and probe C2 in the height direction is C1C2 The calculation has been completed, so it is only necessary to calculate the height difference between probes C2, C3 and C5 in the height direction, and the height information H obtained by measuring area F31 by probe C2 C2F31 The height information H obtained by measuring the area F31 with probe C3 C3F31 By comparison, the height difference △H between probe C2 and probe C3 in the height direction is obtained. C2C3 , the height information H obtained by measuring the area F32 with probe C2 C2F32 The height information H obtained by measuring the area F32 with probe C5 C5F32 By comparison, the height difference △H between probe C2 and probe C5 in the height direction is obtained. C2C5 .
[0060] For probe C3, its corresponding target probes are probe C2 and probe C6. The height difference between probe C2 and probe C3 in the height direction is △H. C2C3 The calculation has been completed, so it is only necessary to calculate the height difference between probe C3 and probe C6 in the height direction, and the height information H obtained by probe C3 measuring area F42 C3F42 The height information H obtained by measuring the area F42 with probe C6 C6F42 By comparison, the height difference △H between probe C3 and probe C6 in the height direction is obtained. C3C6 .
[0061] For probe C4, its corresponding target probes are probe C1, probe C5 and probe C7. The height difference △H between probe C1 and probe C4 in the height direction is C1C4 The calculation has been completed, so it is only necessary to calculate the height difference between probes C4, C5 and C7 in the height direction, and the height information H obtained by measuring area F22 by probe C4 C4F22 The height information H obtained by measuring the area F22 with probe C5 C5F22 By comparison, the height difference △H between probe C4 and probe C5 in the height direction is obtained. C4C5 , the height information H obtained by measuring the area F32 with probe C2 C2F32The height information H obtained by measuring the area F32 with probe C5 C5F32 By comparison, the height difference △H between probe C2 and probe C5 in the height direction is obtained. C2C5 .
[0062] For probe C5, its corresponding target probes are probe C2, probe C4, probe C6 and probe C8. The height difference between probe C5 and probe C2 and probe C4 in the height direction has been calculated. Therefore, it is only necessary to calculate the height difference between probe C5 and probe C6 and probe C8 in the height direction. The height information H obtained by measuring area F32 by probe C5 is C5F32 The height information H obtained by measuring the area F32 with probe C6 C6F32 By comparison, the height difference △H between probe C5 and probe C6 in the height direction is obtained. C5C6 , the height information H obtained by measuring the area F33 with probe C5 C5F33 The height information H obtained by measuring the area F33 with probe C8 C8F33 By comparison, the height difference △H between probe C5 and probe C8 in the height direction is obtained. C5C8 .
[0063] For probe C6, its corresponding target probes are probe C3, probe C5 and probe C9. The height difference between probe C6 and probe C3 and probe C5 in the height direction has been calculated. Therefore, only the height difference between probe C6 and probe C9 in the height direction needs to be calculated. The height information H obtained by measuring area F43 by probe C6 is C6F43 The height information H obtained by measuring the area F43 with the probe C9 C9F43 By comparison, the height difference △H between probe C6 and probe C9 in the height direction is obtained. C6C9 .
[0064] For probe C7, its corresponding target probes are probe C4 and probe C8. The height difference between probe C4 and probe C7 in the height direction has been calculated. Therefore, only the height difference between probe C7 and probe C8 in the height direction needs to be calculated. The height information H obtained by measuring area F23 by probe C7 is converted into C7F23 The height information H obtained by measuring the area F23 with probe C8 C8F23 By comparison, the height difference △H between probe C7 and probe C8 in the height direction is obtained. C7C8 .
[0065] For probe C8, its corresponding target probes are probe C5, probe C7 and probe C9. The height difference between probe C8 and probe C5 and probe C7 in the height direction has been calculated. Therefore, only the height difference between probe C8 and probe C9 in the height direction needs to be calculated. The height information H obtained by measuring area F33 by probe C8 is C8F33 The height information H obtained by measuring the area F33 with probe C9 C9F33 By comparison, the height difference △H between probe C8 and probe C9 in the height direction is obtained. C8C9 .
[0066] For probe C9, its corresponding target probes are probe C6 and probe C8. The height difference between probe C9 and probe C6 and probe C8 in the height direction has been calculated, and there is no need to repeat the calculation.
[0067] Step 303 : Select any probe as a reference probe, and obtain the height difference between each probe and the reference probe in the height direction based on the height difference between each probe and the corresponding target probe in the height direction.
[0068] Specifically, continuing the above example, taking probe C1 as the reference probe, the height difference between probe C2 and reference probe C1 in the height direction is △H C1C2 , the height difference between probe C3 and reference probe C1 in the height direction △H C1C3 =△H C1C2 +△H C2C3 , the height difference between probe C4 and reference probe C1 in the height direction △H C1C4 ; The height difference between probe C5 and reference probe C1 in the height direction △H C1C5 =△H C1C4 +△H C4C5 , or △H C1C5 =△H C1C2 +△H C2C5 ; The height difference between probe C6 and reference probe C1 in the height direction △H C1C6 =△H C1C2 +△H C2C3 +△H C3C6 , or △H C1C6 =△H C1C2 +△H C2C5 +△H C5C6 , or △H C1C6 =△H C1C4 +△H C4C5 +△H C5C6 ; The height difference between probe C7 and reference probe C1 in the height direction △H C1C7 =△H C1C4 +△H C4C7; The height difference between probe C8 and reference probe C1 in the height direction △H C1C8 =△H C1C4 +△H C4C7 +△H C7C8 , or △H C18 =△H C1C2 +△H C2C5 +△H C5C8 ; The height difference between probe C9 and reference probe C1 in the height direction △H C1C9 =△H C1C4 +△H C4C7 +△H C7C8 +△H C8C9 , or △H C1C8 =△H C1C2 +△H C2C3 +△H C3C6 +△H C6C9 .
[0069] It should be noted that when the height difference between the probe and the reference probe in the height direction can be calculated through multiple calculation formulas, the final height difference between the probe and the reference probe in the height direction can be obtained by taking the average or median, which can improve the accuracy of the calculated height difference.
[0070] The fourth embodiment of the present invention relates to a probe calibration method. The main difference between this embodiment and the first embodiment is that: a specific implementation method for determining the height difference between the probe and the target probe in the height direction is provided.
[0071] The specific process of the probe calibration method of this embodiment is as follows Fig.11 shown.
[0072] Step 401, control multiple probes to perform multiple measurements on multiple areas on the target surface, and obtain height information of the corresponding area measured by each probe in each measurement; each probe and the adjacent probe measure the same area on the target surface during the multiple measurements. This is substantially the same as step 101 in the first embodiment, and will not be described in detail here.
[0073] Step 402 includes the following sub-steps:
[0074] Sub-step 4021 , for each probe, according to the height information obtained by measuring the same area by the probe and the target probe, respectively calculate the height values of the probe and the target probe in the height direction.
[0075] Sub-step 4022, calculating the difference between the height value of the probe and the height value of the target probe as the height difference between the probe and the target probe in the height direction.
[0076] For more information, see Figure 3 and Figure 4 , taking probe C1 as an example, the target probe corresponding to probe C1 is probe C2, and the height information H obtained based on the measurement area F2 by probe C1 C1F2 , calculate the height value H in the height direction obtained by measuring the target area F2 with probe C1 C1F2 '; Similarly, the height information H obtained by measuring the area F2 based on the target probe C2 corresponding to the probe C1 C2F2 Calculate the height value H in the height direction obtained by measuring the target probe C2 in the area F2 C2F2 '.
[0077] In one embodiment, the height information of the probe includes the height value between the probe and each pixel point in the measured area, and the height value of the probe in the height direction is the average of the height values between the probe and each pixel point in the measured area. Taking probe C1 as an example, when calculating the height value H of probe C1 in the measured area F2, C1F2 ', obtain the height information H obtained by the probe C1 measuring area F2 C1F2 The height values between the probe C1 and each pixel in the region F2 are included in the calculation, and then the average of these multiple height values is calculated as the height value H in the height direction obtained by the probe C1 measuring the target region F2. C1F2 '.
[0078] In another embodiment, the height information of the probe includes the height value between the probe and each pixel point in the measured area, and the height value of the probe in the height direction is the height value between the probe and the preset pixel point in the measured area. Taking the probe C1 as an example, when calculating the height value H of the probe C1 in the measured area F2, C1F2 ', obtain the height information H obtained by the probe C1 measuring area F2 C1F2 The height value between the probe C1 and each pixel in the area F2 is then selected, and the height value between the probe C1 and the preset pixel point in the area F2 is obtained by measuring the height value H in the height direction of the target area F2 by the probe C1. C1F2 '.
[0079] Then calculate the probe height H of probe C1 C1F2 'Height value H with target probe C2 C2F2 The difference between the probe C1 and the target probe C2 in the height direction is △H C1C2 When calculating the difference between the height values of the two probes, the height value of the probe can be subtracted from the height value of the corresponding target probe, that is, △H C1C2 =H C1F2 '-H C2F2 '; Similarly, the height information H obtained by measuring the area F3 based on the probe C2C2F3 Calculate the height value H in the height direction obtained by measuring area F3 with probe C2 C2F3 ', height information H obtained by measuring area F3 based on probe C3 C3F3 Calculate the height value H in the height direction obtained by measuring area F3 with probe C3 C3F3 ', then △H C2C3 =H C2F3 '-H C3F3 '; Based on the height information H obtained by measuring the area F4 by probe C3 C3F4 Calculate the height value H in the height direction obtained by measuring area F4 with probe C3 C3F4 ', height information H obtained by measuring area F4 based on probe C4 C4F4 Calculate the height value H in the height direction obtained by measuring area F4 with probe C4 C4F4 ', then we can get △H C3C4 =H C3F4 '-H C4F4 '.
[0080] Step 403, select any probe as a reference probe, and obtain the height difference between each probe and the reference probe based on the height difference between each probe and the corresponding target probe in the height direction. This is substantially the same as step 103 in the first embodiment and will not be described in detail here.
[0081] It should be noted that this embodiment is described by taking a one-dimensional probe array as an example. The above calculation method for determining the height difference between the probe and the target probe in the height direction is also applicable to a two-dimensional probe array and will not be described in detail here.
[0082] The fifth embodiment of the present invention relates to a surface measurement method, which is applied to a probe control system. The probe control system can be a computer host, a laptop computer, etc. The probe control system can use the surface measurement method in this embodiment to control the probe device to measure the surface to be operated, and calibrate the measurement result after each measurement. The processing of the surface to be operated by the probe device includes: measuring the physical and chemical quantities of the surface to be operated, scanning probe lithography (SPL), generating electrons, generating photons, and using the probe to introduce ions to perform ion implantation on the surface to be operated. Wherein, the physical quantities and chemical quantities involved include but are not limited to: electrical information, mechanical information, magnetic information, optical information, acoustic information and material composition, such as three-dimensional morphology measurement, surface roughness measurement, surface conductivity measurement, surface material composition measurement, surface temperature measurement, surface hardness measurement, surface elastic modulus measurement, surface emission light measurement, surface luminescence measurement, surface Raman signal measurement, etc.; scanning probe lithography is to add a voltage (such as 50V) to the probe to form an electric field with high electric field strength at the probe tip, at which time the electrons at the tip are easily pulled out to form an electric field emission at the probe end, thereby using the electrons emitted by the electric field formed by the probe tip to photosensitively form electron beam lithography on the photoresist, and the electrons emitted by the probe can generate secondary electrons on the surface to be operated. Wherein, the surface to be operated can be a silicon wafer, a glass sheet, a quartz sheet, a wafer or a printed circuit board, etc.
[0083] The specific process of the surface measurement method of this embodiment is as follows Fig.12 shown.
[0084] Step 501 : controlling a plurality of probes in a probe device to measure a plurality of regions of a surface to be operated, and obtaining height information of a region corresponding to the region measured by each probe.
[0085] Step 502, calibrating the height information measured by each probe based on the height difference between each probe and a reference probe among the multiple probes in the height direction; wherein the height difference between each probe and the reference probe in the height direction is obtained based on the probe calibration method of any one of the first to fourth embodiments.
[0086] Specifically, the probe array of the probe device includes a plurality of probes, one of which is selected as a reference probe. The probe calibration method of any one of the first to fourth embodiments can be used to obtain the height difference between the remaining probes and the reference probe in the height direction, and then for each probe, the height information obtained by measuring the corresponding area of the probe is calibrated based on the height difference between the probe and the reference probe in the height direction. At this time, it can be considered that the needle tips of the probes in the probe array are in the same horizontal plane, that is, the height information obtained by measuring the corresponding area of all probes in the probe array can accurately represent the situation of the surface to be operated. Among them, the height difference between each probe and the reference probe in the height direction obtained by using the probe calibration method of any one of the first to fourth embodiments can be updated in a preset manner, for example, updated each time a new surface to be operated is measured, or updated after a preset round of measurement of the surface to be operated is completed, or updated after a preset time period of measurement.
[0087] Step 503: obtaining the measurement result of the surface to be operated according to the height information of each calibrated probe.
[0088] Specifically, after obtaining the height information of each calibrated probe, a measurement result of the surface to be operated, such as an image of the surface to be operated, can be generated based on the height information.
[0089] The sixth embodiment of the present invention relates to a probe control device, including: a probe device and a probe control system connected to the probe device for communication; a plurality of probes are arranged on the probe device; the probe control system is used for the probe calibration method of any one of the first to fourth embodiments, and / or the surface measurement method of the fifth embodiment, and the probe control system is, for example, a computer host, a laptop computer, etc.
[0090] Preferred embodiments of the present invention have been described above in detail, but it should be understood that aspects of the embodiments can be modified, if necessary, to employ aspects, features and concepts of the various patents, applications and publications to provide further embodiments.
[0091] These and other changes can be made to the embodiments in light of the above detailed description.In general, in the claims, the terms used should not be considered limited to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments along with the full scope of equivalents to which these claims are entitled.
Claims
1. A probe calibration method, characterized in that: include: In the process of measuring the target surface, multiple probes are controlled to measure multiple areas on the target surface multiple times, and height information obtained by each probe measuring the corresponding area in each measurement is obtained; each probe and the adjacent probe measure the same area on the target surface during the multiple measurements; wherein the multiple probes form a one-dimensional probe array; the control of the multiple probes to measure multiple areas on the target surface multiple times includes: controlling the multiple probes to measure the multiple areas on the target surface at multiple measurement positions, each measurement position differs from the next measurement position by one area of the target surface in a preset direction, and the preset direction is the probe arrangement direction in the one-dimensional probe array; For each of the probes, the height information obtained by measuring the same area by the probe and the target probe is compared to determine the height difference between the probe and the target probe in the height direction; the target probe is a probe adjacent to the probe; Any one of the probes is selected as a reference probe, and based on the height difference between each probe and the corresponding target probe in the height direction, the height difference between each probe and the reference probe in the height direction is obtained, wherein the height difference between each probe and the reference probe in the height direction is used to calibrate the height information obtained from measuring the corresponding area of each probe during the surface measurement process.
2. The probe calibration method according to claim 1, characterized in that: For each of the probes, comparing the height information obtained by measuring the same area with that of the target probe to determine the height difference between the probe and the target probe in the height direction, including: For each of the probes, according to the height information obtained by measuring the same area by the probe and the target probe, respectively calculate the height values of the probe and the target probe in the height direction; The difference between the height value of the probe and the height value of the target probe is calculated as the height difference between the probe and the target probe in the height direction.
3. The probe calibration method according to claim 2, characterized in that: The height information of the probe includes the height value between the probe and each pixel point in the measured area, and the height value of the probe in the height direction is the average value of the height values between the probe and each pixel point in the measured area.
4. The probe calibration method according to claim 2, characterized in that: The height information of the probe includes the height value between the probe and each pixel point in the measured area, and the height value of the probe in the height direction is the height value between the probe and a preset pixel point in the measured area.
5. The probe calibration method according to claim 1, characterized in that: The area on the target surface is any one of the following: a pixel point, a line formed by a plurality of pixel points, and a surface composed of a plurality of pixel points.
6. A probe calibration method, characterized in that: include: In the process of measuring the target surface, a plurality of probes are controlled to measure a plurality of areas on the target surface for a plurality of times, and height information of the corresponding area measured by each probe in each measurement is obtained; in the process of multiple measurements, each probe and an adjacent probe measure the same area on the target surface; wherein the plurality of probes form a two-dimensional probe array; the controlling the plurality of probes to measure a plurality of areas on the target surface for a plurality of times comprises: controlling the plurality of probes to measure a plurality of areas on the target surface at a plurality of measurement positions, wherein at least one measurement position differs from an adjacent next measurement position by an area on the target surface in the length direction of the two-dimensional probe array, and at least one measurement position differs from an adjacent next measurement position by an area on the target surface in the width direction of the two-dimensional probe array; For each of the probes, the height information obtained by measuring the same area by the probe and the target probe is compared to determine the height difference between the probe and the target probe in the height direction; the target probe is a probe adjacent to the probe; Any one of the probes is selected as a reference probe, and based on the height difference between each probe and the corresponding target probe in the height direction, the height difference between each probe and the reference probe in the height direction is obtained, wherein the height difference between each probe and the reference probe in the height direction is used to calibrate the height information obtained from measuring the corresponding area of each probe during the surface measurement process.
7. The probe calibration method according to claim 6, characterized in that: For each of the probes, comparing the height information obtained by measuring the same area with that of the target probe to determine the height difference between the probe and the target probe in the height direction, including: For each of the probes, according to the height information obtained by measuring the same area by the probe and the target probe, respectively calculate the height values of the probe and the target probe in the height direction; The difference between the height value of the probe and the height value of the target probe is calculated as the height difference between the probe and the target probe in the height direction.
8. The probe calibration method according to claim 7, characterized in that: The height information of the probe includes the height value between the probe and each pixel point in the measured area, and the height value of the probe in the height direction is the average value of the height values between the probe and each pixel point in the measured area.
9. The probe calibration method according to claim 7, characterized in that: The height information of the probe includes the height value between the probe and each pixel point in the measured area, and the height value of the probe in the height direction is the height value between the probe and a preset pixel point in the measured area.
10. The probe calibration method according to claim 6, characterized in that: The area on the target surface is any one of the following: a pixel point, a line formed by a plurality of pixel points, and a surface composed of a plurality of pixel points.
11. A surface measurement method, characterized in that: include: Controlling multiple probes in the probe device to measure multiple areas of the surface to be operated, and obtaining height information of the area corresponding to each probe; Based on the acquired height difference between each of the probes and a reference probe among the multiple probes in the height direction, the height information measured by each of the probes is calibrated; wherein the height difference between each of the probes and the reference probe in the height direction is obtained based on the probe calibration method described in any one of claims 1 to 10; The measurement result of the surface to be operated is obtained according to the height information of each of the calibrated probes.
12. A probe control device, characterized in that: include: A probe device and a probe control system connected to the probe device for communication; the probe device is provided with a plurality of probes; The probe control system is used to execute the probe calibration method according to any one of claims 1 to 10 and / or the surface measurement method according to claim 11.
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