Detection device

Abstract

The detection device comprises: a substrate; a photoelectric conversion element disposed on the substrate and including a semiconductor layer; a transistor disposed corresponding to the photoelectric conversion element; a first insulating film disposed on the substrate to cover the transistor; and a second insulating film disposed on the first insulating film to cover the photoelectric conversion element and composed of an organic material. The semiconductor layer of the photoelectric conversion element includes a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer.

Description

Technical Field

[0001] The invention relates to a detection device. Background Art

[0002] Patent document 1 describes a detection device (referred to as a photoelectric conversion device in Patent document 1) in which a plurality of photoelectric conversion elements such as PIN photodiodes are arranged on a substrate. Such an optical detection device is used as a biosensor for detecting biometric information, such as a fingerprint sensor and a vein sensor. The plurality of photoelectric conversion elements are arranged at a spacing corresponding to the resolution of the detection and are covered with an inorganic insulating film such as silicon oxide or silicon nitride.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent No. 6028233 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] When a plurality of photoelectric conversion elements are formed thickly, the coverage of the inorganic insulating film may be reduced, and as a result, the reliability of the detection device may be reduced.

[0008] An object of the present invention is to provide a detection device capable of improving reliability.

[0009] Technical solutions for solving technical problems

[0010] A detection device according to one aspect of the present invention comprises: a substrate; a photoelectric conversion element, which is arranged on the substrate and includes a semiconductor layer; a transistor, which is arranged corresponding to the photoelectric conversion element; a first insulating film, which covers the transistor and is arranged on the substrate; and a second insulating film, which covers the photoelectric conversion element and is arranged on the first insulating film and is composed of an organic material. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1A This is a cross-sectional view showing a schematic cross-sectional structure of a detection device with an illumination device including the detection device according to the first embodiment.

[0012] Figure 1B It is a cross-sectional view showing a schematic cross-sectional structure of a detection device with an illumination device according to a first modification.

[0013] Figure 2 It is a plan view showing the detection device according to the first embodiment.

[0014] Figure 3It is a block diagram showing a configuration example of a detection device according to the first embodiment.

[0015] Figure 4 is a circuit diagram showing a detection element.

[0016] Figure 5 It is a timing waveform diagram showing an operation example of the detection element.

[0017] Figure 6 is a top view showing a detection element.

[0018] Figure 7 yes Figure 6 VII-VII' cross-sectional view.

[0019] Figure 8 It is a cross-sectional view showing a detection element according to a second modification example of the first embodiment.

[0020] Fig. 9 It is a cross-sectional view showing a detection element according to the second embodiment.

[0021] Fig.10 This is a cross-sectional view showing a detection element according to a third modification example of the second embodiment. DETAILED DESCRIPTION

[0022] The mode (implementation method) for implementing the invention is described in detail with reference to the accompanying drawings. The present invention is not limited to the contents described in the following implementation methods. In addition, the constituent elements described below include elements that can be easily thought of by a person skilled in the art, and substantially the same elements. Furthermore, the constituent elements described below can be appropriately combined. It should be noted that the disclosure is only an example, and appropriate changes that can be easily thought of by a person skilled in the art to maintain the main purpose of the invention are of course included in the scope of the present invention. In addition, in order to make the description clearer, the accompanying drawings schematically represent the width, thickness, shape, etc. of each part compared to the actual situation, but it is only an example and does not limit the interpretation of the present invention. In addition, in this specification and each figure, the same figure mark is marked for the same elements as the elements previously described for the figures that have appeared, and the detailed description is sometimes appropriately omitted.

[0023] In the present specification and claims, when expressing a manner of configuring another structure on a certain structure, when simply expressed as "on", unless otherwise specified, it includes both a case where the other structure is configured directly on the certain structure in a manner of being in contact with the certain structure, and a case where the other structure is configured above the certain structure further separated by another structure.

[0024] (First Embodiment)

[0025] Figure 1A2 is a cross-sectional view showing a schematic cross-sectional structure of a detection device with an illumination device having a detection device according to the first embodiment. Figure 1A As shown, the detection device 120 with an illumination device comprises a detection device 1, an illumination device 121, and a protective member 122. In a direction perpendicular to the surface of the detection device 1, the illumination device 121, the detection device 1, and the protective member 122 are stacked in this order.

[0026] The lighting device 121 has a light irradiation surface 121a for irradiating light, and irradiates light L1 from the light irradiation surface 121a toward the detection device 1. The lighting device 121 is a backlight. The lighting device 121 may be, for example, a so-called side-light type backlight having a light guide plate disposed at a position corresponding to the detection area AA and a plurality of light sources arranged at one end or both ends of the light guide plate. As the light source, for example, a light emitting diode (LED: Light Emitting Diode) emitting light of a prescribed color is used. In addition, the lighting device 121 may be a so-called direct-down type backlight having a light source (e.g., LED) disposed directly below the detection area AA. In addition, the lighting device 121 is not limited to a backlight, and may be disposed on the side or above the detection device 1, and may irradiate the light L1 from the side or above the finger Fg.

[0027] The detection device 1 is disposed opposite to the light irradiation surface 121a of the lighting device 121. The light L1 irradiated from the lighting device 121 passes through the detection device 1 and the protective member 122. The detection device 1 is, for example, a light reflection type biosensor, and by detecting the light L2 reflected by the finger Fg, it is able to detect the unevenness of the surface of the finger Fg (for example, a fingerprint). Alternatively, in addition to detecting the fingerprint, the detection device 1 may also detect the light L2 reflected inside the finger Fg to detect information related to the organism. The information related to the organism is, for example, a blood vessel image such as a vein, a pulse, a pulse wave, and the like. The color of the light L1 from the lighting device 121 may also differ depending on the detection object.

[0028] The protective member 122 is a member for protecting the detection device 1 and the lighting device 121, and covers the detection device 1 and the lighting device 121. The protective member 122 is, for example, a glass substrate. It should be noted that the protective member 122 is not limited to a glass substrate, and may also be a resin substrate or the like. In addition, the protective member 122 may not be provided. In this case, a protective layer such as an insulating film is provided on the surface of the detection device 1, and the finger Fg contacts the protective layer of the detection device 1.

[0029] The detection device 120 with a lighting device may also be provided with a display panel instead of the lighting device 121. The display panel may be, for example, an organic EL display panel (OLED: Organic Light Emitting Diode) or an inorganic EL display (micro LED, mini LED). Alternatively, the display panel may be a liquid crystal display panel (LCD: Liquid Crystal Display) using a liquid crystal element as a display element or an electrophoretic display panel (EPD: Electrophoretic Display) using an electrophoretic element as a display element. Even in this case, the display light (light L1) irradiated from the display panel passes through the detection device 1, and the fingerprint of the finger Fg and information related to the biological body can be detected based on the light L2 reflected by the finger Fg.

[0030] (First Modification)

[0031] Figure 1B 2 is a cross-sectional view showing a schematic cross-sectional structure of a detection device with an illumination device according to a first variant. Figure 1B As shown, the detection device 120A with lighting device has the detection device 1, lighting device 121, and protective member 122 (cover glass) stacked in this order in a direction perpendicular to the surface of the detection device 1. In this modification, as the lighting device 121, a display panel such as an organic EL display panel can also be used.

[0032] The light L1 emitted from the lighting device 121 passes through the protective member 122 and is reflected by the finger Fg. The light L2 reflected by the finger Fg passes through the protective member 122 and further passes through the lighting device 121. The detection device 1 can detect information related to the biological body such as fingerprint detection by receiving the light L2 that passes through the lighting device 121.

[0033] Figure 2 FIG. 2 is a top view showing the detection device involved in the first embodiment. Figure 2 As shown, the detection device 1 includes a substrate 21 , a sensor unit 10 , a scanning line driving circuit 15 , a signal line selecting circuit 16 , a detection circuit 48 , a control circuit 102 , and a power supply circuit 103 .

[0034] The control substrate 101 is electrically connected to the substrate 21 via the wiring substrate 110. The wiring substrate 110 is, for example, a flexible printed substrate or a rigid substrate. A detection circuit 48 is provided on the wiring substrate 110. A control circuit 102 and a power supply circuit 103 are provided on the control substrate 101. The control circuit 102 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 102 supplies control signals to the sensor unit 10, the scan line driving circuit 15, and the signal line selecting circuit 16 to control the detection operation of the sensor unit 10. The power supply circuit 103 generates a power supply potential VDD and a reference potential VCOM (reference voltage VCOM). Figure 4 ) and other voltage signals are provided to the sensor unit 10, the scanning line driving circuit 15 and the signal line selection circuit 16. It should be noted that although the detection circuit 48 is configured on the wiring substrate 110 as an example in this embodiment, it is not limited to this. The detection circuit 48 can also be configured on the substrate 21.

[0035] The substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area overlapping with the plurality of detection elements 3 included in the sensor unit 10. The peripheral area GA is an area outside the detection area AA and is an area not overlapping with the detection elements 3. That is, the peripheral area GA is an area between the periphery of the detection area AA and the outer edge of the substrate 21. The scan line drive circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA.

[0036] The plurality of detection elements 3 of the sensor unit 10 are light sensors each having a photoelectric conversion element 30. The photoelectric conversion element 30 is a photodiode that outputs an electrical signal corresponding to the light irradiated thereto. More specifically, the photoelectric conversion element 30 is a PIN (Positive Intrinsic Negative) photodiode. The detection elements 3 are arranged in a matrix in the detection area AA. The photoelectric conversion elements 30 of the plurality of detection elements 3 perform detection according to a gate drive signal (e.g., a reset control signal RST, a readout control signal RD) supplied from the scanning line drive circuit 15. The plurality of photoelectric conversion elements 30 outputs an electrical signal corresponding to the light irradiated thereto to the signal line selection circuit 16 as a detection signal Vdet. The detection device 1 detects information related to the biological body based on the detection signal Vdet from the plurality of photoelectric conversion elements 30.

[0037] The scan line drive circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA. Specifically, the scan line drive circuit 15 is provided in a region extending along the second direction Dy in the peripheral area GA. The signal line selection circuit 16 is provided in a region extending along the first direction Dx in the peripheral area GA and is provided between the sensor unit 10 and the detection circuit 48.

[0038] It should be noted that the first direction Dx is a direction in a plane parallel to the substrate 21. The second direction Dy is a direction in a plane parallel to the substrate 21, and is a direction orthogonal to the first direction Dx. It should be noted that the second direction Dy may not be orthogonal to the first direction Dx but may cross it. In addition, the third direction Dz is a direction orthogonal to the first direction Dx and the second direction Dy, and is a normal direction of the substrate 21.

[0039] Figure 3 1 is a block diagram showing an example of the configuration of a detection device according to the first embodiment. Figure 3 As shown, the detection device 1 further includes a detection control circuit 11 and a detection unit 40. A part or all of the functions of the detection control circuit 11 are included in the control circuit 102. In addition, a part or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 102.

[0040] The detection control circuit 11 is a circuit that supplies control signals to the scan line driving circuit 15, the signal line selection circuit 16, and the detection unit 40 to control their operations. The detection control circuit 11 supplies various control signals such as a start signal STV and a clock signal CK to the scan line driving circuit 15. In addition, the detection control circuit 11 supplies various control signals such as a selection signal ASW to the signal line selection circuit 16.

[0041] The scanning line driving circuit 15 drives a plurality of scanning lines (a readout control scanning line GLrd, a reset control scanning line GLrst (see Figure 4 The scanning line driving circuit 15 selects a plurality of scanning lines sequentially or simultaneously, and provides a gate driving signal (such as a reset control signal RST and a readout control signal RD) to the selected scanning lines. Thus, the scanning line driving circuit 15 selects a plurality of photoelectric conversion elements 30 connected to the scanning lines.

[0042] The signal line selection circuit 16 selects a plurality of output signal lines SL in sequence or simultaneously (see Figure 4 ). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected output signal line SL to the detection circuit 48 based on the selection signal ASW provided from the detection control circuit 11. Thus, the signal line selection circuit 16 outputs the detection signal Vdet of the photoelectric conversion element 30 to the detection unit 40.

[0043] The detection unit 40 includes a detection circuit 48, a signal processing circuit 44, a coordinate extraction circuit 45, a storage circuit 46, and a detection timing control circuit 47. The detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 to operate synchronously based on a control signal supplied from the detection control circuit 11.

[0044] The detection circuit 48 is, for example, an analog front end circuit (AFE). The detection circuit 48 is a signal processing circuit having at least the functions of the detection signal amplifier circuit 42 and the A / D converter circuit 43. The detection signal amplifier circuit 42 is a circuit for amplifying the detection signal Vdet, for example, an integration circuit. The A / D converter circuit 43 converts the analog signal output from the detection signal amplifier circuit 42 into a digital signal.

[0045] The signal processing circuit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When the finger Fg contacts or approaches the detection surface, the signal processing circuit 44 can detect the concavity and convexity of the surface of the finger Fg or the palm based on the signal from the detection circuit 48. In addition, the signal processing circuit 44 can also detect information related to the living body based on the signal from the detection circuit 48. The information related to the living body is, for example, the blood vessel image, pulse wave, pulse, blood oxygen saturation, etc. of the finger Fg or the palm.

[0046] The storage circuit 46 temporarily stores the signal calculated by the signal processing circuit 44. The storage circuit 46 may be, for example, a RAM (Random Access Memory) or a register circuit.

[0047] The coordinate extraction circuit 45 is a logic circuit that obtains the detection coordinates of the concavo-convex surface of the finger Fg, etc. when the contact or approach of the finger Fg is detected in the signal processing circuit 44. In addition, the coordinate extraction circuit 45 is a logic circuit that obtains the detection coordinates of the blood vessels of the finger Fg and the palm. The coordinate extraction circuit 45 combines the detection signals Vdet output from each detection element 3 of the sensor unit 10 to generate two-dimensional information representing the shape of the concavo-convex surface of the finger Fg, etc. It should be noted that the coordinate extraction circuit 45 may output the detection signal Vdet as the sensor output Vo without calculating the detection coordinates.

[0048] Next, a circuit configuration example and an operation example of the detection device 1 will be described. Figure 4 is a circuit diagram showing a detection element. Figure 4As shown, the detection element 3 has a photoelectric conversion element 30, a reset transistor Mrst, a readout transistor Mrd, and a source follower transistor Msf. In addition, a reset control scanning line GLrst and a readout control scanning line GLrd are provided in the detection element 3 as detection drive lines (scanning lines), and an output signal line SL is provided as a wiring for signal readout.

[0049] It should be pointed out that Figure 4 , one detection element 3 is shown, but the reset control scanning line GLrst, the readout control scanning line GLrd, and the output signal line SL are connected to a plurality of detection elements 3. Specifically, the reset control scanning line GLrst and the readout control scanning line GLrd are connected in the first direction Dx (refer to Figure 2 ) and is connected to a plurality of detection elements 3 arranged in the first direction Dx. In addition, the output signal line SL extends in the second direction Dy and is connected to a plurality of detection elements 3 arranged in the second direction Dy.

[0050] The reset transistor Mrst, the read transistor Mrd, and the source follower transistor (drain grounding circuit) Msf are provided corresponding to one photoelectric conversion element 30. The plurality of transistors included in the detection element 3 are each composed of an n-type TFT (Thin Film Transistor). However, this is not limited to this, and each transistor may also be composed of a p-type TFT.

[0051] A reference potential VCOM is applied to the anode of the photoelectric conversion element 30. The cathode of the photoelectric conversion element 30 is connected to the node N1. The node N1 is connected to the capacitor element Cs, one of the source and drain of the reset transistor Mrst, and the gate of the source follower transistor Msf. Furthermore, a parasitic capacitor Cp exists at the node N1. When the photoelectric conversion element 30 is irradiated with light, the signal (charge) output from the photoelectric conversion element 30 is accumulated in the capacitor element Cs.

[0052] The gate of the reset transistor Mrst is connected to the reset control scanning line GLrst. The reset potential Vrst is provided to the other of the source and drain of the reset transistor Mrst. When the reset transistor Mrst is turned on (conducting state) in response to the reset control signal RST, the potential of the node N1 is reset to the reset potential Vrst. The reference potential VCOM has a potential lower than the reset potential Vrst, and the photoelectric conversion element 30 is reverse biased and driven.

[0053] The source follower transistor Msf is connected between a terminal to which the power supply potential VDD is provided and the read transistor Mrd (node ​​N2). The drain of the source follower transistor Msf is connected to the power supply potential VDD. The potential of the power supply potential VDD is higher than the reset potential Vrst. The gate of the source follower transistor Msf is connected to the node N1. The signal (charge) generated by the photoelectric conversion element 30 is provided to the gate of the source follower transistor Msf. Thus, the source follower transistor Msf outputs a signal voltage corresponding to the signal (charge) generated in the photoelectric conversion element 30 to the read transistor Mrd.

[0054] The read transistor Mrd is connected between the source (node ​​N2) of the source follower transistor Msf and the output signal line SL (node ​​N3). The gate of the read transistor Mrd is connected to the read control scanning line GLrd. When the read transistor Mrd is turned on in response to the read control signal RD, the signal output from the source follower transistor Msf, that is, the signal voltage corresponding to the signal (charge) generated in the photoelectric conversion element 30, is output to the output signal line SL as the detection signal Vdet.

[0055] It should be pointed out that Figure 4 In the example shown, the reset transistor Mrst and the read transistor Mrd are respectively a so-called double-gate structure formed by connecting two transistors in series. However, it is not limited to this, and the reset transistor Mrst and the read transistor Mrd can be a single-gate structure, or three or more transistors can be connected in series. In addition, the circuit of a detection element 3 is not limited to the structure having three transistors: the reset transistor Mrst, the source follower transistor Msf, and the read transistor Mrd. The detection element 3 can have two transistors or more than four transistors. In addition, these reset transistors Mrst and read transistors Mrd function as so-called switching elements, but not only N-MOS type switching elements can be used, but also P-MOS type and CMOS type switching elements can be used.

[0056] Figure 5 1 is a timing waveform diagram showing an example of the operation of the detection element. The detection element 3 performs detection in the order of the reset period Prst, the accumulation period Pch, and the readout period Pdet. The power supply circuit 103 supplies the reference potential VCOM to the anode of the photoelectric conversion element 30 throughout the reset period Prst, the accumulation period Pch, and the readout period Pdet.

[0057] At time t0, the control circuit 102 sets the reset control signal RST provided to the reset control scanning line GLrst to high (high level voltage), and starts the reset period Prst. During the reset period Prst, the reset transistor Mrst is turned on (conductive state), and the potential of the node N1 rises to the potential of the reset potential Vrst. In addition, since the read transistor Mrd is turned off (non-conductive state), the source of the source follower transistor Msf is charged by the power supply potential VDD, and the potential of the node N2 rises.

[0058] At time t1, the control circuit 102 sets the read control signal RD provided to the read control scanning line GLrd to high (high level voltage). As a result, the read transistor Mrd is turned on (conducting state), and the potential of the node N2 becomes (Vrst-Vthsf). It should be noted that Vthsf is the threshold voltage Vthsf of the source follower transistor Msf.

[0059] At time t2, the control circuit 102 sets the reset control signal RST to low (low level voltage), the reset period Prst ends, and the accumulation period Pch begins. During the accumulation period Pch, the reset transistor Mrst is turned off (non-conducting state). The signal corresponding to the light irradiated to the photoelectric conversion element 30 is accumulated, and the potential of the node N1 is reduced to (Vrst-Vphoto). It should be noted that Vphoto is a signal (voltage change) corresponding to the light irradiated to the photoelectric conversion element 30.

[0060] At time t3, the potential of the detection signal Vdet1 output from the output signal line SL is (Vrst-Vthsf-Vrdon). Vrdon is a voltage drop caused by the on-resistance of the read transistor Mrd.

[0061] The control circuit 102 sets the read control signal RD to low (low level voltage) at time t3. As a result, the read transistor Mrd is turned off (non-conducting state), and the potential of the node N2 is constant at (Vrst-Vthsf). In addition, the potential of the detection signal Vdet output from the output signal line SL is also low (low level voltage).

[0062] The control circuit 102 sets the read control signal RD to high (high level voltage) at time t4. As a result, the read transistor Mrd is turned on (conducting state), the accumulation period Pch ends, and the read period Pdet begins. The potential of the node N2 changes to (Vrst-Vthsf-Vphoto) according to the signal Vphoto. The potential of the detection signal Vdet2 output during the read period Pdet is lowered from the potential of the detection signal Vdet1 obtained at time t3 by the amount of the signal Vphoto, and becomes (Vrst-Vthsf-Vrdon-Vphoto).

[0063] The detection unit 40 can detect the light irradiated to the photoelectric conversion element 30 (more specifically, the amount of light received by the photoelectric conversion element 30 during the above-mentioned exposure period (accumulation period Pch)) based on the differential signal (Vphoto) between the detection signal Vdet1 at time t3 and the detection signal Vdet2 at time t5. Figure 5 , an operation example of one detection element 3 is shown, but the scanning line driving circuit 15 can perform detection with the detection elements 3 of the entire detection area AA by sequentially scanning the reset control scanning line GLrst and the readout control scanning line GLrd in time division.

[0064] Next, the plan view structure and cross-sectional structure of the detection element 3 will be described. Figure 6 FIG. 1 is a top view showing the detection element. Figure 6 As shown, one detection element 3 includes two scanning lines (a readout control scanning line GLrd and a reset control scanning line GLrst) and four signal lines (an output signal line SL, a power signal line SLsf, a reset signal line SLrst, and a reference signal line SLcom).

[0065] The readout control scanning line GLrd and the reset control scanning line GLrst extend in the first direction Dx and are arranged in the second direction Dy. The output signal line SL, the power signal line SLsf, the reset signal line SLrst and the reference signal line SLcom extend in the second direction Dy and are arranged in the first direction Dx.

[0066] The detection element 3 is a region surrounded by two scanning lines (the readout control scanning line GLrd and the reset control scanning line GLrst) and two signal lines (for example, the power signal line SLsf and the reference signal line SLcom).

[0067] The photoelectric conversion element 30 is arranged in an area surrounded by the readout control scanning line GLrd, the reset control scanning line GLrst, the reset signal line SLrst and the reference signal line SLcom. The photoelectric conversion element 30 is configured to include a semiconductor layer having a photovoltaic effect. Specifically, the semiconductor layer of the photoelectric conversion element 30 includes an i-type semiconductor layer 31, an n-type semiconductor layer 32 and a p-type semiconductor layer 33. The i-type semiconductor layer 31, the n-type semiconductor layer 32 and the p-type semiconductor layer 33 are, for example, amorphous silicon (a-Si). It should be noted that the material of the semiconductor layer is not limited thereto, and may also be polycrystalline silicon, microcrystalline silicon, etc.

[0068] The n-type semiconductor layer 32 is doped with impurities in a-Si to form an n+ region. The p-type semiconductor layer 33 is doped with impurities in a-Si to form a p+ region. The i-type semiconductor layer 31 is, for example, an undoped intrinsic semiconductor and has lower conductivity than the n-type semiconductor layer 32 and the p-type semiconductor layer 33.

[0069] The p-type semiconductor layer 33 is connected to the reference signal line SLcom via the contact hole H11 , thereby providing the reference potential VCOM to the p-type semiconductor layer 33 of the photoelectric conversion element 30 via the reference signal line SLcom.

[0070] The lower conductive layer 35 is provided in a region overlapping with the semiconductor layer of the photoelectric conversion element 30. The lower conductive layer 35 is connected to the reference signal line SLcom via the contact hole H12. Thus, the lower conductive layer 35 is provided with the same reference potential VCOM as the p-type semiconductor layer 33, and the parasitic capacitance between the lower conductive layer 35 and the p-type semiconductor layer 33 can be suppressed.

[0071] The reset transistor Mrst, the source follower transistor Msf, and the read transistor Mrd are arranged in the second direction Dy. In addition, the three transistors are arranged adjacent to one photoelectric conversion element 30 in the first direction Dx.

[0072] The reset transistor Mrst has a semiconductor layer 61, a source electrode 62, a drain electrode 63, and a gate electrode 64. One end of the semiconductor layer 61 is connected to the reset signal line SLrst. The other end of the semiconductor layer 61 is connected to the connection wiring SLcn via the contact hole H3. The portion of the reset signal line SLrst connected to the semiconductor layer 61 functions as the source electrode 62, and the portion of the connection wiring SLcn connected to the semiconductor layer 61 functions as the drain electrode 63. The semiconductor layer 61 intersects the reset control scanning line GLrst. A channel region is formed in the portion of the semiconductor layer 61 that overlaps with the reset control scanning line GLrst, and the portion of the reset control scanning line GLrst that overlaps with the semiconductor layer 61 functions as the gate electrode 64.

[0073] The source follower transistor Msf has a semiconductor layer 65, a source electrode 66, a drain electrode 67, and a gate electrode 68. One end of the semiconductor layer 65 is connected to the power signal line SLsf via the contact hole H4. The other end of the semiconductor layer 65 is connected to the node N2. The portion of the power signal line SLsf connected to the semiconductor layer 65 functions as the drain electrode 67, and the portion of the node N2 connected to the semiconductor layer 65 functions as the source electrode 66.

[0074] One end of the gate line GLsf is connected to the connection wiring SLcn via a contact hole. The other end side of the gate line GLsf is branched into two and arranged in the second direction Dy. The semiconductor layer 65 intersects with the gate line GLsf branched into two. The portion of the gate line GLsf that overlaps with the semiconductor layer 65 functions as a gate electrode 68. That is, the reset transistor Mrst is electrically connected to the gate of the source follower transistor Msf via the gate line GLsf.

[0075] In addition, the upper electrode 34 provided on the photoelectric conversion element 30 is connected to the connection wiring 34a indicated by the double-dotted line. The connection wiring 34a is connected to the connection wiring SLcn via the contact hole H2. Thus, the cathode (n-type semiconductor layer 32) of the photoelectric conversion element 30 is electrically connected to the reset transistor Mrst and the source follower transistor Msf via the connection wiring SLcn. The connection wiring 34a can, for example, adopt a stacked structure of molybdenum (Mo) and aluminum (Al). However, it is not limited to this, and the connection wiring 34a can be other metal materials, or the upper electrode 34 and the connection wiring 34a can be formed integrally by a light-transmitting conductive material such as ITO.

[0076] The read transistor Mrd has a semiconductor layer 71, a source electrode 72, a drain electrode 73 and a gate electrode 74. One end of the semiconductor layer 71 is connected to the node N2. The other end of the semiconductor layer 71 is connected to the output signal line SL. In other words, the portion of the node N2 connected to the semiconductor layer 71 functions as the drain electrode 73, and the portion of the output signal line SL connected to the semiconductor layer 71 functions as the source electrode 72. The read control scan line GLrd has two branch portions arranged in the second direction Dy. The semiconductor layer 71 intersects with the two branch portions of the read control scan line GLrd. The portion of the read control scan line GLrd overlapping with the semiconductor layer 71 functions as the gate electrode 74. In such a structure, the source follower transistor Msf and the read transistor Mrd are connected to the output signal line SL.

[0077] It should be pointed out that Figure 6 The top view structure of the photoelectric conversion element 30 and each transistor shown is only an example and can be modified appropriately. For example, it is not limited to the structure in which multiple transistors are arranged in the second direction Dy, and some transistors can be arranged adjacent to other transistors in the first direction Dx and set at different positions.

[0078] Figure 7 yes Figure 6 It should be noted that Figure 7, among the three transistors included in the detection element 3 , the cross-sectional structure of the reset transistor Mrst is shown. However, the cross-sectional structures of the source follower transistor Msf and the read transistor Mrd are also the same as that of the reset transistor Mrst.

[0079] The substrate 21 is an insulating substrate, for example, a glass substrate such as quartz or alkali-free glass, or a resin substrate such as polyimide. The gate electrode 64 is provided on the substrate 21. The insulating films 22 and 23 are provided on the substrate 21 to cover the gate electrode 64. The insulating films 22 and 23 and the insulating films 24 to 26 are inorganic insulating films, for example, silicon oxide (SiO2), silicon nitride (SiN), etc.

[0080] The semiconductor layer 61 is arranged on the insulating film 23. The semiconductor layer 61 uses polycrystalline silicon, for example. However, the semiconductor layer 61 is not limited to this, and can also be a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, a low-temperature polycrystalline silicon (LTPS: Low Temperature Polycrystalline Silicone), etc. The gate electrode 64 is opposite to the semiconductor layer 61 through the insulating films 22 and 23 (gate insulating film). The reset transistor Mrst is a bottom gate structure in which the gate electrode 64 is arranged on the lower side of the semiconductor layer 61, but it can also be a top gate structure in which the gate electrode 64 is arranged on the upper side of the semiconductor layer 61, and it can also be a double gate structure in which the gate electrode 64 is arranged on the upper side and the lower side of the semiconductor layer 61.

[0081] The semiconductor layer 61 includes a channel region 61a, high-concentration impurity regions 61b, 61c, and low-concentration impurity regions 61d, 61e. The channel region 61a is, for example, a non-doped intrinsic semiconductor or a low-impurity region, and has a lower conductivity than the high-concentration impurity regions 61b, 61c and the low-concentration impurity regions 61d, 61e. The channel region 61a is provided in a region overlapping with the gate electrode 64.

[0082] The high-concentration impurity region 61b is provided in a region connected to the source electrode 62, that is, in a region overlapping with the bottom surface of the contact hole H5 penetrating the insulating films 24 and 25. In addition, the high-concentration impurity region 61c is provided in a region connected to the drain electrode 63, that is, in a region overlapping with the bottom surface of the contact hole H3 penetrating the insulating films 24 and 25. The low-concentration impurity regions 61d and 61e are provided between the channel region 61a and the high-concentration impurity regions 61b and 61c, respectively.

[0083] The insulating films 24 and 25 cover the semiconductor layer 61 and are provided on the insulating film 23. The source electrode 62 is connected to the semiconductor layer 61 via the contact hole H5. In addition, the drain electrode 63 is connected to the semiconductor layer 61 via the contact hole H3. The source electrode 62 and the drain electrode 63 are composed of, for example, a stacked film of TiAlTi or TiAl, which is a stacked structure of titanium and aluminum.

[0084] The gate line GLsf connected to the gate of the source follower transistor Msf is provided in the same layer as the gate electrode 64. The drain electrode 63 (connection wiring SLcn) of the reset transistor Mrst is connected to the gate line GLsf via a contact hole penetrating the insulating film 22 to the insulating film 25.

[0085] The semiconductor layer 65 of the source follower transistor Msf is provided in the same layer as the semiconductor layer 61. In addition, the power signal line SLsf is provided in the same layer as the source electrode 62 (reset signal line SLrst) and the drain electrode 63 (connection wiring SLcn). The power signal line SLsf is connected to the semiconductor layer 65 via a contact hole H4 penetrating the insulating films 24 and 25.

[0086] Next, the cross-sectional structure of the photoelectric conversion element 30 is described. The lower conductive layer 35 is provided on the substrate 21 in the same layer as the gate electrode 64 and the gate line GLsf. The insulating film 22 and the insulating film 23 are provided on the lower conductive layer 35. The photoelectric conversion element 30 is provided on the insulating film 23. In other words, the lower conductive layer 35 is provided between the substrate 21 and the p-type semiconductor layer 33. More specifically, the photoelectric conversion element 30 is formed on the insulating films 22 and 23 (gate insulating films), and the lower conductive layer 35 (light shielding layer) is provided at least opposite to the p-type semiconductor layer 33 via the insulating films 22 and 23 (gate insulating films). The lower conductive layer 35 functions as a light shielding layer by being formed of the same material as the gate electrode 64, and the lower conductive layer 35 can suppress light from the substrate 21 side from entering the photoelectric conversion element 30.

[0087] In the direction (third direction Dz) perpendicular to the surface of the substrate 21, the i-type semiconductor layer 31 is provided between the p-type semiconductor layer 33 and the n-type semiconductor layer 32. In the present embodiment, the p-type semiconductor layer 33, the i-type semiconductor layer 31, and the n-type semiconductor layer 32 are stacked on the insulating film 23 in this order.

[0088] Specifically, the p-type semiconductor layer 33 is provided on the insulating film 23 in the same layer as the semiconductor layer 61 and the semiconductor layer 65. The insulating films 24, 25 and 26 (first insulating film) are provided to cover the p-type semiconductor layer 33. The insulating film 24 and the insulating film 25 are provided with a contact hole H13 at a position overlapping with the p-type semiconductor layer 33. The insulating film 26 is provided on the insulating film 25 to cover a plurality of transistors including the reset transistor Mrst. The insulating film 26 covers the side surfaces of the insulating film 24 and the insulating film 25 constituting the inner wall of the contact hole H13. In addition, on the insulating film 26, a contact hole H14 is provided at a position overlapping with the p-type semiconductor layer 33.

[0089] The i-type semiconductor layer 31 is disposed on the insulating film 26 and is connected to the p-type semiconductor layer 33 via the contact hole H14 that penetrates the insulating film 24 to the insulating film 26. The n-type semiconductor layer 32 is disposed on the i-type semiconductor layer 31. Specifically, the upper surface of the p-type semiconductor layer 33 is in contact with the i-type semiconductor layer 31 and is also in contact with the insulating film 26 (first insulating film). In addition, the lower surface of the i-type semiconductor layer 31 is in contact with the p-type semiconductor layer 33, and the side surface of the i-type semiconductor layer 31 is in contact with the insulating film 26 (first insulating film) and the insulating film 27 (second insulating film).

[0090] Here, a groove portion 31h that is recessed in a direction perpendicular to the side surface is provided on the side surface of the i-type semiconductor layer 31. The groove portion 31h is formed at the upper end portion of the i-type semiconductor layer 31, that is, near the boundary between the i-type semiconductor layer 31 and the n-type semiconductor layer 32. The groove portion 31h is formed along the outer periphery of the i-type semiconductor layer 31 when viewed from above, and is formed to a position that is closer to the inside than the outer periphery of the n-type semiconductor layer 32. In other words, the outer edge portion of the n-type semiconductor layer 32 extends outward from the bottom of the groove portion 31h of the i-type semiconductor layer 31 to form an eaves shape. When the photoelectric conversion element 30 is patterned for each of the plurality of detection elements 3, the groove portion 31h is formed due to the difference in etching rates between the i-type semiconductor layer 31 and the n-type semiconductor layer 32.

[0091] The insulating film 27 (second insulating film) covers the photoelectric conversion element 30 and is provided on the insulating film 26. The insulating film 27 is provided so as to be directly in contact with the photoelectric conversion element 30 and the insulating film 26. The insulating film 27 is made of an organic material such as photosensitive acrylic. The insulating film 27 is thicker than the insulating film 26. The insulating film 27 has better step coverage than an inorganic insulating material, and is provided to cover the side surfaces of the i-type semiconductor layer 31 and the n-type semiconductor layer 32 and the groove portion 31h.

[0092] The upper electrode 34 is provided on the insulating film 27. The upper electrode 34 is, for example, a light-transmitting conductive material such as ITO (Indium Tin Oxide). The upper electrode 34 is provided along the surface of the insulating film 27 and is connected to the n-type semiconductor layer 32 via a contact hole H1 provided in the insulating film 27. In addition, the upper electrode 34 (connection wiring 34a) is electrically connected to the drain electrode 63 of the reset transistor Mrst and the gate line GLsf via a contact hole H2 provided in the insulating film 27.

[0093] The insulating film 28 and the insulating film 29 are provided on the insulating film 27 to cover the upper electrode 34. The insulating film 28 is an inorganic insulating film. The insulating film 28 is provided as a protective layer to suppress the intrusion of moisture into the photoelectric conversion element 30. The insulating film 29 is an organic protective film. The insulating film 29 is formed to flatten the surface of the detection device 1.

[0094] As described above, the detection device 1 of the present embodiment comprises: a substrate 21; a photoelectric conversion element 30, which is arranged on the substrate 21 and includes a semiconductor layer having a photovoltaic effect; a transistor (for example, a reset transistor Mrst), which is arranged corresponding to the photoelectric conversion element 30; a first insulating film (insulating films 24, 25, 26), which covers the transistor and is arranged on the substrate 21; and a second insulating film (insulating film 27), which covers the photoelectric conversion element 30 and is arranged on the first insulating film and is composed of an organic material.

[0095] In this embodiment, by forming a structure in which the photoelectric conversion element 30 is covered with the insulating film 27 made of an organic material, even when there is a step such as a groove 31h formed at the end (side) of the i-type semiconductor layer 31 and the n-type semiconductor layer 32, the end (side) of the i-type semiconductor layer 31 and the n-type semiconductor layer 32 can be well covered. As a result, the upper electrode 34 is smoothly formed on the insulating film 27 without reflecting the unevenness caused by the groove 31h and the step formed by the photoelectric conversion element 30 and the insulating film 26. As a result, the upper electrode 34 can suppress disconnection and high resistance caused by the uneven shape of the groove 31h and the photoelectric conversion element 30.

[0096] In addition, since the insulating film 27 has good coverage, the insulating film 28 provided on the upper electrode 34 also suppresses the generation of steps and has good coverage. As a result, the protective function of the insulating film 28 is ensured, so that the detection device 1 can improve reliability. Furthermore, the insulating film 29 can also be flattened (flattening of the device surface).

[0097] In addition, assuming that an inorganic insulating film is used for the insulating film 27, the film thickness is formed to be about 0.5 μm or more and about 0.7 μm or less. In this embodiment, by using an organic insulating film for the insulating film 27, the film thickness can be made thicker by about 2 μm or more and about 3 μm or less, and the parasitic capacitance between the upper electrode 34 and various wirings arranged via the insulating film 27 can be reduced.

[0098] In this embodiment, since the p-type semiconductor layer 33 and the lower conductive layer 35 of the photoelectric conversion element 30 are provided in the same layer as each transistor, the manufacturing process can be simplified compared to the case where the photoelectric conversion element 30 is formed in a different layer.

[0099] (Second Modification)

[0100] Figure 8 2 is a cross-sectional view showing a detection element according to a second modification of the first embodiment. In the following description, the same reference numerals are given to the same components as those described in the above embodiment, and duplicate descriptions are omitted.

[0101] like Figure 8 As shown, the detection element 3A of the second modification is different from the first embodiment in the stacking order of the photoelectric conversion element 30A. Specifically, an n-type semiconductor layer 32 , an i-type semiconductor layer 31 , and a p-type semiconductor layer 33 are stacked in this order on the insulating film 23 .

[0102] The n-type semiconductor layer 32 is provided on the insulating film 23 in the same layer as the semiconductor layer 61 and the semiconductor layer 65. The insulating film 24, the insulating film 25 and the insulating film 26 (first insulating film) are provided to cover the n-type semiconductor layer 32. The i-type semiconductor layer 31 is provided on the insulating film 26 and is connected to the n-type semiconductor layer 32 via the contact holes H13 and H14 penetrating the insulating film 24 to the insulating film 26. The p-type semiconductor layer 33 is provided on the i-type semiconductor layer 31. More specifically, the photoelectric conversion element 30A is formed on the insulating films 22 and 23 (gate insulating films), and the lower conductive layer 35 (light shielding layer) is provided to face at least the n-type semiconductor layer 32 via the insulating films 22 and 23 (gate insulating films). In addition, the upper surface of the n-type semiconductor layer 32 is in contact with the i-type semiconductor layer 31 and is also in contact with the insulating film 26 (first insulating film). The lower surface of the i-type semiconductor layer 31 is in contact with the n-type semiconductor layer 32, and the side surface of the i-type semiconductor layer 31 is in contact with the insulating film 26 (first insulating film) and the insulating film 27 (second insulating film). In addition, the semiconductor layer 61 of the reset transistor Mrst is formed in the same layer as the n-type semiconductor layer 32.

[0103] The groove portion 31 h is formed at the upper end portion of the i-type semiconductor layer 31 , that is, near the boundary between the i-type semiconductor layer 31 and the p-type semiconductor layer 33 .

[0104] In the second modification, a reference potential VCOM (see Figure 4 ), the p-type semiconductor layer 33 and the node N1 (refer to Figure 4 ) is electrically connected. In this case, the reference potential VCOM has a potential higher than the reset potential Vrst so that the photoelectric conversion element 30A is reverse biased and driven.

[0105] (Second Embodiment)

[0106] Fig. 9 2 is a cross-sectional view showing a detection element according to the second embodiment. Fig. 9 As shown, the detection element 3B of the second embodiment is different from the first embodiment and the second modification in that the photoelectric conversion element 30B is provided in a layer different from the reset transistor Mrst.

[0107] In the region where the photoelectric conversion element 30B is provided, the insulating films 22 to 26 are not provided with contact holes, and the insulating films 22 to 26 are stacked between the substrate 21 and the photoelectric conversion element 30B. The photoelectric conversion element 30B is stacked on the insulating film 26 (first insulating film) in the order of the p-type semiconductor layer 33, the i-type semiconductor layer 31, and the n-type semiconductor layer 32. That is, the p-type semiconductor layer 33 is provided in a layer different from the semiconductor layer 61 of the reset transistor Mrst.

[0108] More specifically, a lower electrode 38 is provided on the flat surface of the insulating film 26, and a p-type semiconductor layer 33 is provided on the lower electrode 38. The lower electrode 38 is connected to the reference signal line SLcom via a contact hole H16 provided in the insulating film 26. Thus, a reference potential VCOM is provided from the reference signal line SLcom to the p-type semiconductor layer 33 via the lower electrode 38.

[0109] The insulating film 27 covers the photoelectric conversion element 30B and is provided on the insulating film 26. The insulating film 27 covers the end portions (side surfaces) of the p-type semiconductor layer 33, the i-type semiconductor layer 31, and the n-type semiconductor layer 32. In this embodiment, although the groove portion 31h is formed at the end portion (side surface) of the i-type semiconductor layer 31, it is also well covered by the insulating film 27 made of an organic material.

[0110] (Third Modification)

[0111] Fig.10 2 is a cross-sectional view showing a detection element according to a third modification of the second embodiment. A detection element 3C according to the third modification is different from the first embodiment, the second embodiment, and the second modification in that an insulating film 26 is formed of an organic material.

[0112] The insulating film 26 is made of the same material as the insulating film 27, for example, an organic material such as photosensitive acrylic. However, the insulating film 26 may also be made of a material different from that of the insulating film 27. The insulating film 26 is provided to cover transistors such as the reset transistor Mrst and various wirings. Thus, the steps formed by the various wirings are flattened, and the upper surface of the insulating film 26 is formed to be flat.

[0113] In the third modification, disconnection and high resistance of the upper electrode 34 can be more effectively suppressed. In addition, the coverage of the insulating film 28 is improved, and the reliability of the detection device 1 can be improved.

[0114] It should be noted that the photoelectric conversion element 30B in the second embodiment and the third modification can also adopt the same stacked structure as the second modification. That is, the photoelectric conversion element 30B can also be stacked on the insulating film 26 (first insulating film) in the order of the n-type semiconductor layer 32, the i-type semiconductor layer 31, and the p-type semiconductor layer 33.

[0115] The preferred embodiments of the present invention have been described above, but the present invention is not limited to such embodiments. The contents disclosed in the embodiments are only examples, and various changes can be made without departing from the scope of the present invention. Appropriate changes made within the scope of the present invention also belong to the technical scope of the present invention.

[0116] Description of Reference Numerals

[0117] 1. Detection device

[0118] 3. 3A, 3B, 3C detection elements

[0119] 10 Sensor unit

[0120] 15 Scan line driving circuit

[0121] 16 Signal line selection circuit

[0122] 21 substrate

[0123] 22, 23, 24, 25, 26, 27, 28, 29 Insulation film

[0124] 30, 30A, 30B Photoelectric conversion element

[0125] 31 i-type semiconductor layer

[0126] 31h Slot

[0127] 32 n-type semiconductor layer

[0128] 33 p-type semiconductor layer

[0129] 34 Upper electrode

[0130] 34a Connection Wiring

[0131] 48 Detection circuit

[0132] AA detection area

[0133] GA Surrounding Area

[0134] GLrst reset control scan line

[0135] GLrd readout control scan line

[0136] SL output signal cable

[0137] SLsf Power Signal Cable

[0138] SLrst reset signal line

[0139] SLcom Reference Signal Cable

[0140] VDD Power supply potential

[0141] VCOM reference potential

[0142] Vrst reset potential

[0143] RST reset control signal

[0144] RD read control signal

[0145] Mrst Reset transistor

[0146] Mrd read transistor

[0147] Msf Source follower transistor.

Claims

1. A detection device, comprising: substrate; A photoelectric conversion element is disposed on the substrate and includes a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; A first insulating film, covering the transistor and disposed on the substrate; as well as a second insulating film, which covers the photoelectric conversion element and is disposed on the first insulating film and is made of an organic material, The semiconductor layer of the photoelectric conversion element includes: A p-type semiconductor layer is disposed on the substrate; An i-type semiconductor layer is provided on the first insulating film covering the p-type semiconductor layer and is connected to the p-type semiconductor layer via a contact hole provided in the first insulating film; and An n-type semiconductor layer is disposed on the i-type semiconductor layer, A groove is provided on the side of the semiconductor layer, The groove is formed on the side of the i-type semiconductor layer and near the n-type semiconductor layer, but not on the n-type semiconductor layer. The second insulating film is provided to cover the side surfaces of the semiconductor layer and the groove portion.

2. A detection device, comprising: substrate; A photoelectric conversion element is disposed on the substrate and includes a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; A first insulating film, covering the transistor and disposed on the substrate; as well as a second insulating film, which covers the photoelectric conversion element and is disposed on the first insulating film and is made of an organic material, The semiconductor layer of the photoelectric conversion element includes: An n-type semiconductor layer is disposed on the substrate; An i-type semiconductor layer is provided on the first insulating film covering the n-type semiconductor layer and is connected to the n-type semiconductor layer via a contact hole provided in the first insulating film; and A p-type semiconductor layer is disposed on the i-type semiconductor layer, A groove is provided on the side of the semiconductor layer, The groove is formed on the side of the i-type semiconductor layer and near the p-type semiconductor layer, but not in the p-type semiconductor layer. The second insulating film is provided to cover the side surfaces of the semiconductor layer and the groove portion.

3. A detection device comprising: substrate; A photoelectric conversion element is disposed on the substrate and includes a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; A first insulating film, covering the transistor and disposed on the substrate; as well as a second insulating film, which covers the photoelectric conversion element and is disposed on the first insulating film and is made of an organic material, The semiconductor layer of the photoelectric conversion element includes a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, and is stacked on the electrode formed on the first insulating film in the order of the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer. A groove is provided on the side of the semiconductor layer, The groove is formed on the side of the i-type semiconductor layer and near the n-type semiconductor layer, but not on the n-type semiconductor layer. The second insulating film is provided to cover the side surfaces of the semiconductor layer and the groove portion.

4. The detection device according to claim 3, wherein: A conductive layer is formed between the first insulating film and the substrate, The first insulating film has a contact hole formed at a position that does not overlap with the photoelectric conversion element in a plan view, and the electrode is connected to the conductive layer via the contact hole.

5. The detection device according to claim 3, wherein: The photoelectric conversion element is provided at a position not overlapping with the transistor in a plan view.

6. A detection device comprising: substrate; A photoelectric conversion element is disposed on the substrate and includes a semiconductor layer; A transistor, arranged corresponding to the photoelectric conversion element; A first insulating film, covering the transistor and disposed on the substrate; as well as a second insulating film, which covers the photoelectric conversion element and is disposed on the first insulating film and is made of an organic material, The semiconductor layer of the photoelectric conversion element includes a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, and is stacked on the electrode formed on the first insulating film in the order of the n-type semiconductor layer, the i-type semiconductor layer, and the p-type semiconductor layer. A groove is provided on the side of the semiconductor layer, The groove is formed on the side of the i-type semiconductor layer and near the p-type semiconductor layer, but not in the p-type semiconductor layer. The second insulating film is provided to cover the side surfaces of the semiconductor layer and the groove portion.

7. The detection device according to claim 6, wherein: A conductive layer is formed between the first insulating film and the substrate, The first insulating film has a contact hole formed at a position that does not overlap with the photoelectric conversion element in a plan view, and the electrode is connected to the conductive layer via the contact hole.

8. The detection device according to claim 6, wherein: The photoelectric conversion element is provided at a position not overlapping with the transistor in a plan view.

9. The detection device according to any one of claims 3 to 5, wherein: The first insulating film is made of an organic material.

10. The detection device according to any one of claims 6 to 8, wherein: The first insulating film is made of an organic material.

11. The detection device according to claim 1, wherein: The transistor includes a semiconductor layer formed in the same layer as the p-type semiconductor layer, a gate electrode facing the semiconductor layer via a gate insulating film, and a source electrode and a drain electrode connected to the semiconductor layer.

12. The detection device according to claim 11, wherein: An upper surface of the p-type semiconductor layer is in contact with the i-type semiconductor layer and is also in contact with the first insulating film.

13. The detection device according to claim 12, wherein: The i-type semiconductor layer is in contact with the p-type semiconductor layer, and is in contact with the first insulating film and the second insulating film.

14. The detection device according to any one of claims 11 to 13, wherein: The photoelectric conversion element is formed on the gate insulating film, and a light shielding layer is provided to face at least the p-type semiconductor layer via the gate insulating film.

15. The detection device according to claim 14, wherein: The light shielding layer and the gate electrode are formed in the same layer.

16. The detection device according to claim 1, wherein: A conductive layer is formed between the first insulating film and the p-type semiconductor layer, The conductive layer is connected to the p-type semiconductor layer at a position that does not overlap with the photoelectric conversion element in a plan view.

17. The detection device according to any one of claims 11 to 13, wherein: A conductive layer is formed between the first insulating film and the p-type semiconductor layer, The conductive layer is formed on the same layer as the source electrode and the drain electrode.

18. The detection device according to claim 2, wherein: The transistor includes a semiconductor layer formed in the same layer as the n-type semiconductor layer, a gate electrode facing the semiconductor layer via a gate insulating film, and a source electrode and a drain electrode connected to the semiconductor layer.

19. The detection device according to claim 18, wherein: An upper surface of the n-type semiconductor layer is in contact with the i-type semiconductor layer and is also in contact with the first insulating film.

20. The detection device according to claim 19, wherein: The i-type semiconductor layer is in contact with the n-type semiconductor layer, and is in contact with the first insulating film and the second insulating film.

21. The detection device according to claim 18, wherein: The photoelectric conversion element is formed on the gate insulating film, and a light shielding layer is provided to face at least the n-type semiconductor layer via the gate insulating film.

22. The detection device according to any one of claims 18 to 21, wherein: The light shielding layer and the gate electrode are formed in the same layer.

23. The detection device according to claim 2 or 18, wherein: A conductive layer is formed between the first insulating film and the p-type semiconductor layer, The conductive layer is connected to the p-type semiconductor layer at a position that does not overlap with the photoelectric conversion element in a plan view.

24. The detection device according to claim 2 or 18, wherein: A conductive layer is formed between the first insulating film and the p-type semiconductor layer, The conductive layer is formed on the same layer as the source electrode and the drain electrode.

25. The detection device according to claim 1, 2, 3 or 6, wherein: The second insulating film is thicker than the first insulating film.

26. The detection device according to claim 1, 11 or 16, wherein: The first insulating film is formed of an inorganic material.

27. The detection device according to claim 2 or 18, wherein: The first insulating film is formed of an inorganic material.

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