Sapphire wafer measurement device

By designing the sapphire chip measurement device that contains the material station, cleaning station, and measurement station, the problem of inaccurate measurement of the sapphire chip TTV value of the sapphire chip has been solved, and higher measurement accuracy is achieved.

CN114427818BActive Publication Date: 2025-01-28甘肃旭晶新材料有限公司 +1
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Patent Information

Application Number
CN202111629241.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-12-28
Publication Date
2025-01-28
Estimated Expiration
2041-12-28

AI Technical Summary

Technical Problem

The TTV value measurement results of the sapphire chip are inaccurate, which affects the performance of the final product.

Method used

A measurement device that includes the feeding station, cleaning station and measurement station. The cleaning station includes a conveyor belt, primary washing station, secondary washing station and air -dried workstations. Washing and air -drying treatment.

Benefits of technology

Through two cleaning and air -drying cleaning process, the cleaning effect of the sapphire chip surface is significantly improved, so that the measurement of the TTV value is more accurate, and the measurement accuracy is improved.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present disclosure relates to a sapphire wafer measuring device, which belongs to the field of sapphire wafer processing. The sapphire wafer measuring device includes a loading station, a cleaning station and a measuring station. The cleaning station includes a conveyor belt and a primary water washing station, a secondary water washing station and an air-drying station for air-drying the sapphire wafer arranged in sequence along the conveyor belt. The loading station is arranged upstream of the conveyor belt for delivering the sapphire wafer to be cleaned to the conveyor belt. The measuring station is arranged downstream of the conveyor belt for receiving the cleaned sapphire wafer so that the TTV value of the sapphire wafer can be detected. The sapphire wafer measuring device disclosed in the present disclosure solves the problem of inaccurate TTV value measurement results of sapphire wafers existing in the related art.
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Description

Technical Field

[0001] The present disclosure relates to the technical field of sapphire wafer processing, and in particular, to a sapphire wafer measuring device. Background Art

[0002] For the production of LED chips, sapphire substrate material has become the preferred material in terms of cost and process feasibility. It is converted from high-purity aluminum oxide particles into LED products. In this process, an important process is copper polishing. In this process, the sapphire wafer and liquid wax are first processed by a waxing machine, and then the sapphire wafer is pasted on the surface of the ceramic plate and transported to the copper polishing machine manually. The sapphire wafer is ground and trimmed in the copper polishing machine for 20-70 minutes to make the surface of the sapphire wafer fully adhere to the abrasive and polishing agent. After manual cleaning and blowing off the water stains, the TTV of the sapphire wafer is measured to see if it meets the standard value. Finally, it is manually transported to the waxing machine, the wafer is separated from the ceramic plate, the wafer is boxed, and the ceramic plate is cleaned. In the above process, the accuracy of the TTV value measurement of the sapphire wafer determines the quality of the final product performance, and the quality of the sapphire wafer cleaning directly affects the accuracy of the TTV value measurement of the sapphire wafer. Summary of the invention

[0003] The present disclosure provides a sapphire wafer measurement device, which solves the problem of inaccurate TTV value measurement results of sapphire wafers in the related art.

[0004] In order to achieve the above-mentioned purpose, the present disclosure provides a sapphire wafer measuring device, including a loading station, a cleaning station and a measuring station, the cleaning station including a conveyor belt and a primary water washing station, a secondary water washing station and an air-drying station for air-drying the sapphire wafers arranged in sequence along the conveyor belt, the loading station is arranged upstream of the conveyor belt, and is used to deliver the sapphire wafers to be cleaned to the conveyor belt, and the measuring station is arranged downstream of the conveyor belt, and is used to receive the cleaned sapphire wafers so that the TTV value of the sapphire wafers can be detected.

[0005] Optionally, the measuring station includes a first mounting frame, a first supporting surface and a first carrier, the first mounting frame is arranged downstream of the air-drying station, the first supporting surface is arranged on the top of the first mounting frame, the first carrier is arranged on the first supporting surface, and the first carrier is used to receive the ceramic plate loaded with sapphire wafers delivered from the air-drying station.

[0006] Optionally, the measuring station also includes a first power mechanism, which is arranged below the first supporting surface, and the output end of the first power mechanism passes through the first supporting surface and is connected to the bottom of the first carrier. When the ceramic disk loaded with the sapphire wafer is delivered from the air-drying station to the first carrier, the first power mechanism drives the first carrier to rotate.

[0007] Optionally, the measuring station also includes a first auxiliary part arranged on the first supporting surface, the first auxiliary part is located on the side of the first carrier close to the air-drying station, and the first auxiliary part is used to assist the ceramic disk loaded with the sapphire wafer to be delivered from the air-drying station to the first carrier.

[0008] Optionally, the measuring station also includes a measuring structure, which includes a second mounting frame, a second supporting surface and a measuring piece, wherein the second mounting frame is arranged on the top of the first mounting frame, the second supporting surface is arranged on the top of the second mounting frame, the second supporting surface is located above the first supporting surface and parallel to the first supporting surface, and the measuring piece is arranged on the second supporting surface, and the measuring piece is used to detect the TTV value of the sapphire wafer in the ceramic disk loaded with sapphire wafers placed on the first carrier.

[0009] Optionally, the loading station includes a third mounting rack, a third supporting surface, a second carrier and a second power mechanism, the third mounting rack is arranged upstream of the primary water washing station, the third supporting surface is arranged on the top of the third mounting rack, the second carrier is arranged on the third supporting surface, the second power mechanism is arranged on the third mounting rack, and the second power mechanism is used to push the ceramic tray loaded with sapphire wafers placed on the second carrier to deliver it to the primary water washing station.

[0010] Optionally, a buffer is further provided at the output end of the second power mechanism, and an end of the buffer close to the primary washing station is configured as an arc-shaped surface.

[0011] Optionally, the loading station also includes a second auxiliary part arranged on the third supporting surface, the second auxiliary part is located on the side of the second carrier close to the primary water washing station, and the second auxiliary part is used to assist the ceramic tray loaded with sapphire wafers to be delivered from the second carrier to the primary water washing station.

[0012] Optionally, the primary water washing station includes a hollow spray member, which is arranged above the conveyor belt. The spray member is provided with a liquid injection part and a liquid spray part. The liquid injection part and the liquid spray part are both connected to the interior of the spray member, and the liquid outlet of the liquid spray part is arranged toward the conveyor belt.

[0013] Optionally, the secondary water washing station includes a fourth mounting frame, a fourth supporting surface, a third power mechanism, a connecting piece and a cleaning piece, the fourth mounting frame is arranged above the conveyor belt and across the conveyor belt, the fourth supporting surface is arranged on the top of the fourth mounting frame, the third power mechanism is arranged on the fourth supporting surface, the output end of the third power mechanism passes through the fourth supporting surface and is connected to the connecting piece, and the cleaning piece is arranged on the connecting piece.

[0014] Optionally, the cleaning element is a flexible cleaning element.

[0015] Optionally, the cleaning element is an annular cleaning element.

[0016] Optionally, a through water injection hole is further provided on the connecting member, and a water outlet of the water injection hole is located in the ring shape of the annular cleaning member and is arranged toward the conveyor belt.

[0017] Optionally, the secondary water washing station also includes a stopping mechanism for stopping the ceramic plate carrying sapphire wafers undergoing secondary cleaning on the conveyor belt from being conveyed to the air-drying station, the stopping mechanism including a fourth power mechanism and a stopper, the fourth power mechanism being arranged on the fourth supporting surface and along the conveying direction of the conveyor belt, the fourth power mechanism being located behind the third power mechanism, the output end of the fourth power mechanism passing through the fourth supporting surface and connected to the stopper, wherein the output direction of the fourth power mechanism is a vertical direction.

[0018] Optionally, the air-drying station includes an air-drying piece, which is arranged above the conveyor belt. The interior of the air-drying piece is hollow, and the air-drying piece is provided with an air inlet part and an air outlet part connected to the interior thereof, and the air outlet of the air outlet part is arranged toward the conveyor belt.

[0019] Optionally, the measuring device of the sapphire wafer also includes a waste liquid treatment station, which includes a drainage structure and a waste liquid outlet structure arranged below the conveyor belt, the drainage structure is arranged on the conveyor belt, and / or the drainage structure is arranged on the side of the conveyor belt, and the horizontal projection of the waste liquid outlet structure covers the horizontal projection of the drainage structure.

[0020] Optionally, the drainage structure is arranged on the conveyor belt, and the drainage structure is a plurality of through holes opened on the conveyor belt.

[0021] Optionally, the drainage structure is arranged on the side of the conveyor belt, baffles are arranged on both sides of the conveyor belt, and the drainage structure is a gap reserved between the conveyor belt and the baffles.

[0022] Optionally, a portion of the drainage structure is arranged on the conveyor belt, and a portion of the drainage structure is a plurality of through holes opened on the conveyor belt; another portion of the drainage structure is arranged on the side of the conveyor belt, and baffles are arranged on both sides of the conveyor belt, and another portion of the drainage structure is a gap reserved between the conveyor belt and the baffle.

[0023] Optionally, the waste liquid outlet structure includes a waste liquid storage box, which is provided with a liquid collecting port and a liquid outlet, the liquid collecting port is located at the top of the waste liquid storage box, and the liquid outlet is located at the bottom of the waste liquid storage box, wherein the horizontal projection of the liquid collecting port covers the horizontal projection of the liquid drainage structure.

[0024] Compared with the related art, the present invention has the following advantages:

[0025] By setting a loading station, a cleaning station and a measuring station, and the cleaning station includes a conveyor belt and a primary water washing station, a secondary water washing station and an air drying station sequentially arranged along the conveying direction of the conveyor belt, the loading station is arranged upstream of the conveyor belt, and is used to deliver the sapphire wafer to be cleaned to the conveyor belt, and the measuring station is arranged downstream of the conveyor belt, and is used to receive the cleaned sapphire wafer so that the TTV value of the sapphire wafer can be measured, so as to achieve the purpose of measuring the surface TTV value after cleaning the sapphire wafer twice and air drying it once. Since the cleaning effect of two cleanings and one air drying is significantly improved compared with the effect of ordinary one cleaning, the TTV value of the sapphire wafer surface measured at this time is also more accurate, that is, the purpose of improving the measurement accuracy of the TTV value of the sapphire wafer can be achieved.

[0026] In addition, arranging the loading station, cleaning station and measuring station in sequence according to the circulation order of the sapphire wafers can greatly shorten the circulation cycle of the sapphire wafers and avoid damage to the surface of the ceramic disk carrying the sapphire wafers caused by manual handling.

[0027] In addition, other features and advantages of the present disclosure will be described in detail in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0029] Figure 1 is a perspective view of a measuring device for a sapphire wafer of the present disclosure;

[0030] Figure 2 is a perspective view of a measuring station of the present disclosure;

[0031] Figure 3 This is a diagram of the use state when the measuring piece in the present disclosure is a desktop measuring tool;

[0032] Figure 4 is a three-dimensional diagram of a loading station disclosed herein;

[0033] Figure 5 is a three-dimensional diagram of a primary washing station of the present disclosure;

[0034] Figure 6 is a three-dimensional diagram of the secondary water washing station of the present disclosure;

[0035] Figure 7 is a perspective view of a connector disclosed herein;

[0036] Figure 8 is a bottom view of the connector of the present disclosure;

[0037] Fig. 9 is a top view of the cleaning element of the present disclosure;

[0038] Fig.10 is a three-dimensional diagram of the air-drying station of the present disclosure;

[0039] Fig.11 It is a three-dimensional diagram of the waste liquid treatment station disclosed in the present invention.

[0040] Description of Reference Numerals

[0041] 1- Loading station;

[0042] 11- third mounting frame;

[0043] 12- third supporting surface;

[0044] 13- second bearing member;

[0045] 14-second power mechanism; 141-buffer;

[0046] 15- second auxiliary member;

[0047] 2-Cleaning station;

[0048] 21- conveyor belt;

[0049] 22-primary washing station;

[0050] 221- spraying part; 221a- liquid injection part; 221b- liquid spraying part;

[0051] 23-Secondary water washing station;

[0052] 231- fourth mounting frame;

[0053] 232- fourth supporting surface;

[0054] 233-Third power mechanism;

[0055] 234-connecting piece; 234a-water injection hole;

[0056] 235-cleaning parts;

[0057] 236-stop mechanism; 236a-fourth power mechanism; 236b-stop member;

[0058] 24-air drying station; 241-air drying parts; 241a-air inlet; 241b-air outlet;

[0059] 3-Measurement station;

[0060] 31-first mounting frame; 32-first supporting surface; 33-first bearing member; 34-first power mechanism; 35-first auxiliary member;

[0061] 36- measuring structure; 361- second mounting frame; 362- second supporting surface; 363- measuring piece;

[0062] 4- Sapphire wafer;

[0063] 5- Ceramic plate for loading sapphire wafer;

[0064] 6-Waste liquid treatment station;

[0065] 61-waste liquid outlet structure; 611-waste liquid storage box; 611a-liquid collecting port; 611b-liquid outlet. DETAILED DESCRIPTION

[0066] The specific implementation of the present disclosure is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described herein is only used to illustrate and explain the present disclosure, and is not used to limit the present disclosure.

[0067] Reference Figure 1 As shown, the present disclosure provides a sapphire wafer measuring device, including a loading station 1, a cleaning station 2 and a measuring station 3, the cleaning station 2 includes a conveyor belt 21 and a primary water washing station 22, a secondary water washing station 23 and an air-drying station 24 for air-drying the sapphire wafer 4 arranged in sequence along the conveyor belt 21, the loading station 1 is arranged upstream of the conveyor belt 21, and is used to deliver the sapphire wafer 4 to be cleaned to the conveyor belt 21, and the measuring station 3 is arranged downstream of the conveyor belt 21, and is used to receive the cleaned sapphire wafer 4 so that the TTV value of the sapphire wafer 4 can be detected.

[0068] It should be noted that, in this embodiment, a cleaning station 2 and a loading station are provided before the measuring station 3, and their main function is to reduce the handling of the ceramic plate 5 loaded with the sapphire wafer during the circulation process to avoid damage caused by bumps. In addition, the cleaning station 2 includes a conveyor belt 21 and a primary water washing station 22, a secondary water washing station 23 and an air drying station 24 arranged in sequence along the conveyor belt 21, and their purpose is to thoroughly clean and air dry the surface of the sapphire wafer 4 before measuring the TTV value of the sapphire wafer 4, so as to avoid the residual stains on the surface of the sapphire wafer 4 affecting the measurement result during the measurement of the TTV value, and finally ensure the accuracy of the measurement result of the TTV value of the sapphire wafer 4.

[0069] In addition, in order to realize automatic control of the above process, a controller and a plurality of sensors electrically connected to the controller may be provided in the measuring device of the sapphire wafer, wherein the plurality of sensors are respectively used to detect different working states in each station, so as to send corresponding signals to the controller in real time, so that the controller can issue corresponding instructions in time and control the station to perform corresponding actions. Here, the controller and the sensor can be realized by using the existing technology, and the present disclosure only describes its main working principle and working process.

[0070] Reference Figure 1 and Figure 2 As shown, as a possible implementation, the measuring station 3 includes a first mounting frame 31, a first supporting surface 32 and a first carrier 33. The first mounting frame 31 is arranged downstream of the air-drying station 24, the first supporting surface 32 is arranged on the top of the first mounting frame 31, and the first carrier 33 is arranged on the first supporting surface 32. The first carrier 33 is used to receive the ceramic plate 5 loaded with sapphire wafers delivered from the air-drying station 24.

[0071] It should be noted that, in this embodiment, the first mounting frame 31 is a square frame, the first supporting surface 32 is a square plate that matches the shape of the first mounting frame 31, and the first mounting frame 31 and the first supporting surface 32 can be made of a metal material or hard plastic with a certain strength, so that the first carrier 33 can be reliably mounted thereon and carry the ceramic disk 5 loaded with sapphire wafers. Among them, the first carrier 33 is arranged at the center position of the first supporting surface 32, so that the weight of the entire device is evenly distributed, thereby improving the safety of the entire device, and its shape can be circular to adapt to the outer contour of the ceramic disk 5 loaded with sapphire wafers. Here, the upper surface of the first carrier 33 is flush with the upper surface of the conveyor belt 21, which is mainly to enable the ceramic disk 5 loaded with sapphire wafers to be smoothly delivered from the conveyor belt 21 to the first carrier 33.

[0072] In addition, in order to facilitate the removal of the ceramic disk 5 loaded with sapphire wafers from the first carrier 33 after measurement, the outer dimensions of the first carrier 33 can be set to be slightly smaller than the outer dimensions of the ceramic disk 5 loaded with sapphire wafers, or the outer dimensions of the first carrier 33 can be set to be the same as the outer dimensions of the ceramic disk 5 loaded with sapphire wafers. In this case, it is necessary to set a plurality of finger grooves penetrating along the thickness direction of the first carrier 33 on the side wall of the first carrier 33 to facilitate the gripping of human hands. Regardless of the method used for the outer dimension relationship between the first carrier 33 and the ceramic disk 5 loaded with sapphire wafers, the main purpose is to facilitate the gripping of human hands, so as to reliably and smoothly carry the ceramic disk 5 loaded with sapphire wafers off the first carrier 33.

[0073] It should also be noted that, in this embodiment, by setting the conveying speed of the conveyor belt 21 , the ceramic disk 5 loaded with the sapphire wafer can be smoothly delivered to the first carrier 33 .

[0074] Reference Figure 1 and Figure 2 As shown, as a possible implementation method, the measuring station 3 also includes a first power mechanism 34, and the first power mechanism 34 is arranged below the first supporting surface 32. The output end of the first power mechanism 34 passes through the first supporting surface 32 and is connected to the bottom of the first carrier 33. When the ceramic disk 5 loaded with the sapphire wafer is delivered from the air-drying station 24 to the first carrier 33, the first power mechanism 34 drives the first carrier 33 to rotate.

[0075] It should be noted that, in this embodiment, the first power mechanism 34 may be a motor. When the ceramic disk 5 loaded with sapphire wafers is delivered from the air-drying station 24 to the first carrier 33, the first power mechanism 34 drives the first carrier 33 to rotate, and at the same time, the ceramic disk 5 loaded with sapphire wafers placed on the first carrier 33 also rotates, that is, the sapphire wafer 4 in the ceramic disk 5 loaded with sapphire wafers rotates, thereby, the operator can measure the TTV value of the sapphire wafer 4 without changing the measurement position in real time, and thus the sapphire wafer measurement device achieves the purpose of simplifying the measurement process.

[0076] In order to realize automatic control of the above process, a first sensor for detecting whether a ceramic disk 5 loaded with a sapphire wafer is placed on the first carrier 33 can also be provided. The first sensor is electrically connected to the controller. When the first sensor detects that a ceramic disk 5 loaded with a sapphire wafer is placed on the first carrier 33, the first sensor sends a signal to the controller, and the controller controls the movement of the first power mechanism 34. The time taken for the first carrier 33 to rotate one circle can be set as a first preset time. When the working time of the first power mechanism 34 reaches the preset time, that is, when the first carrier 33 rotates exactly one circle, the controller controls the first power mechanism 34 to stop moving. At this time, the measuring station 3 completes the measurement of the TTV value of the sapphire wafer 4 placed thereon.

[0077] Reference Figure 1 and Figure 2 As shown, as a possible implementation method, the measuring station 3 also includes a first auxiliary part 35 arranged on the first supporting surface 32, and the first auxiliary part 35 is located on the side of the first carrier 33 close to the air-drying station 24, and the first auxiliary part 35 is used to assist in delivering the ceramic disk 5 loaded with the sapphire wafer from the air-drying station 24 to the first carrier 33.

[0078] It should be noted that, in this embodiment, the first auxiliary member 35 can be a roller mounted on the first supporting surface 32, or a circular arc surface fixed on the first supporting surface 32, and its main purpose is to smoothly and steadily deliver the ceramic disk 5 loaded with sapphire wafers from the conveyor belt 21 under the air-drying station 24 to the first carrier 33. Here, in order to improve the auxiliary transmission effect of the first auxiliary member 35, multiple rows of first auxiliary members 35 can be arranged in parallel to better transfer the ceramic disk 5 loaded with sapphire wafers to the first carrier 33.

[0079] Reference Figure 1 and Figure 2 As shown, as a possible implementation, the measuring station 3 also includes a measuring structure 36, which includes a second mounting frame 361, a second supporting surface 362 and a measuring piece 363. The second mounting frame 361 is arranged on the top of the first mounting frame 31, the second supporting surface 362 is arranged on the top of the second mounting frame 361, the second supporting surface 362 is located above the first supporting surface 32 and parallel to the first supporting surface 32, and the measuring piece 363 is arranged on the second supporting surface 362. The measuring piece 363 is used to detect the TTV value of the sapphire wafer 4 in the ceramic disk 5 loaded with sapphire wafers placed on the first carrier 33.

[0080] It should be noted that, in this embodiment, the second mounting frame 361 can be a square frame similar to the first mounting frame 31, and its height is set so as not to affect the measurement of the TTV value of the sapphire wafer 4 below. The shape of the second supporting surface 362 is a square plate that matches the top shape of the second mounting frame 361. The second mounting frame 361 and the second supporting surface 362 can both be made of a metal material or hard plastic with a certain strength to achieve stable and reliable fixation of the measuring piece 363.

[0081] The measuring piece 363 may be a common table-type measuring tool (see Figure 3 As shown), it can also be a laser ranging sensor (not shown in the figure). When the measuring piece 363 is a desktop measuring fixture, the measuring piece 363 is placed on the upper surface of the second supporting surface 362, and can be removed and used when needed. Specifically, the desktop measuring fixture includes a head part and a frame part of the micrometer. When in use, the frame part is fixed to the center position of the ceramic disk 5 loaded with sapphire wafers placed on the first carrier 33, and the head part of the micrometer is brought into contact with the surface of one of the sapphire wafers 4. After that, by rotating the head part of the micrometer, it is brought into contact with the surface of each sapphire wafer 4 in turn and the readings are recorded. Finally, the TTT values ​​of these sapphire wafers 4 can be obtained by calculating the difference between these readings.

[0082] In addition, the head portion of the micrometer can also be brought into contact with the surface of one of the sapphire wafers 4 by fixing the frame portion at the center position of the ceramic disk 5 loaded with sapphire wafers placed on the first carrier 33, and then the first power mechanism 34 is moved to drive the first carrier 33 connected thereto to rotate, so that the first carrier 33 drives the ceramic disk 5 loaded with sapphire wafers to rotate, and finally these sapphire wafers 4 are rotated, thereby, the head portion of the micrometer can be brought into contact with the surface of each sapphire wafer 4 in the ceramic disk 5 loaded with sapphire wafers, so as to measure the difference between the thicknesses of these sapphire wafers 4, and finally obtain the TTV values ​​of these sapphire wafers 4.

[0083] When the measuring member 363 is a laser distance measuring sensor, the measuring member 363 is mounted on the inner top surface of the second supporting surface 362, that is, the measuring member 363 is mounted on the side of the top surface of the second supporting surface 362 close to the first supporting surface 32. When the ceramic disk 5 loaded with sapphire wafers is placed on the first supporting member 33, the first power mechanism 34 starts to move and drives the first supporting member 33 connected thereto to rotate, thereby driving the ceramic disk 5 loaded with sapphire wafers to rotate accordingly. At this time, as the ceramic disk 5 loaded with sapphire wafers rotates, the laser distance measuring sensor can measure the sapphire wafers 4 in the ceramic disk 5 loaded with sapphire wafers one by one, and finally obtain the TTV values ​​of these sapphire wafers 4.

[0084] Here, in order to realize automatic control of the above process, a first sensor for detecting whether a ceramic disk 5 loaded with a sapphire wafer is placed on the first carrier 33 can be provided. When the first sensor detects that a ceramic disk 5 loaded with a sapphire wafer is placed on the first carrier 33, the first sensor sends a signal to the controller, and the controller controls the first power mechanism 34 to drive the first carrier 33 to rotate. At this time, the measuring member 363 starts to detect the TTV value of the sapphire wafer 4. When the first carrier 33 rotates exactly one circle, the controller controls the first carrier 33 to stop rotating again through the first power mechanism 34, and at this time, the measurement of the TTV value of the sapphire wafer 4 in the ceramic disk 5 of the sapphire wafer placed on the first carrier 33 is completed.

[0085] In addition, the measuring member 363 can adopt an ordinary desktop measuring tool or a laser ranging sensor, and the working process of the measuring member 363 when adopting these two implementation methods has been described in detail in the above embodiments, and this embodiment will not be repeated here. In addition, this embodiment only describes the working relationship between the first sensor and each component, and the relevant content involving the electrical connection between them can be implemented using the existing technology, and this embodiment will not be repeated here.

[0086] Reference Figure 1 and Figure 4 As shown, as a possible implementation method, the loading station 1 includes a third mounting frame 11, a third supporting surface 12, a second carrier 13 and a second power mechanism 14. The third mounting frame 11 is arranged upstream of the primary water washing station 22, the third supporting surface 12 is arranged on the top of the third mounting frame 11, the second carrier 13 is arranged on the third supporting surface 12, and the second power mechanism 14 is arranged on the third mounting frame 11. The second power mechanism 14 is used for pushing the ceramic plate 5 loaded with sapphire wafers placed on the second carrier 13 to deliver it to the primary water washing station 22.

[0087] It should be noted that, in the present embodiment, the third mounting frame 11 is a square frame, and the third supporting surface 12 is a square plate matched with the third mounting frame 11, and both are made of metal material or hard plastic with a certain strength. The second carrier 13 can be a square plate or a circular plate, and its size can be stably and reliably placed on the second carrier 13. Here, the second power mechanism 14 can be a cylinder, wherein the lowest surface of the output end of the second power mechanism 14 is not lower than the upper surface of the second carrier 13, and its main purpose is to enable the second power mechanism 14 to accurately and reliably push the ceramic disk 5 loaded with sapphire wafers placed on the second carrier 13, and avoid the output end of the second power mechanism 14 hitting the side wall of the second carrier 13 during operation.

[0088] In addition, in order to facilitate the above process to be automatically controlled, a second sensor for detecting whether a ceramic disk 5 loaded with sapphire wafers is placed on the second carrier 13 may be provided on the third mounting frame 11. When the second sensor detects that a ceramic disk 5 loaded with sapphire wafers is placed on the second carrier 13, the controller controls the second power mechanism 14 to push the ceramic disk 5 loaded with sapphire wafers from the second carrier 13 to the conveyor belt 21. In addition, this embodiment only describes the working relationship between the second sensor and various components, and the related contents involving the electrical connection between them can be realized by using the existing technology, and this embodiment will not be repeated here.

[0089] Reference Figure 1 and Figure 4 As shown, as a possible implementation, a buffer 141 is further provided at the output end of the second power mechanism 14, and one end of the buffer 141 close to the primary washing station 22 is provided as an arc surface.

[0090] It should be noted that, in the present embodiment, the buffer 141 can be a bump arranged at the output end of the second power mechanism 14, and the bump can be made of materials such as rubber, silicone, etc., or other materials that can achieve a buffering function, which is not limited in the present embodiment. In addition, the lowest surface of the bump is not lower than the height of the upper surface of the second carrier 13 to avoid the second power mechanism 14 driving the bump to hit the side wall of the second carrier 13 during operation. In addition, in order to make the pushing force of the ceramic disk 5 of the sapphire wafer applied by the bump on the second carrier 13 uniform and stable, the end face of the bump close to the primary washing station 22 can be set to an arc surface that matches the shape of the side wall of the ceramic disk 5 carrying the sapphire wafer.

[0091] Reference Figure 1 and Figure 4As shown, as a possible implementation method, the loading station 1 also includes a second auxiliary part 15 arranged on the third supporting surface 12, and the second auxiliary part 15 is located on the side of the second carrier 13 close to the primary water washing station 22, and the second auxiliary part 15 is used to assist in delivering the ceramic disk 5 loaded with sapphire wafers from the second carrier 13 to the primary water washing station 22.

[0092] It should be noted that, in this embodiment, the second auxiliary member 15 can be a roller or an arc surface installed on the third supporting surface 12, and its purpose is to smoothly deliver the ceramic disk 5 loaded with sapphire wafers placed on the second carrier 13 to the conveyor belt 21. Here, in order to make the second auxiliary member 15 play a better auxiliary role in the delivery process of the ceramic disk 5 loaded with sapphire wafers, multiple rows of second auxiliary members 15 arranged in parallel can be arranged on one side of the second carrier 13 close to the primary washing station 22, so as to more smoothly deliver the ceramic disk 5 loaded with sapphire wafers to the conveyor belt 21.

[0093] Reference Figure 1 and Figure 5 As shown, as a possible implementation method, the primary washing station 22 includes a hollow spray member 221, which is arranged above the conveyor belt 21. The spray member 221 is provided with a liquid injection part 221a and a liquid spray part 221b. The liquid injection part 221a and the liquid spray part 221b are both connected to the interior of the spray member 221, and the liquid outlet of the liquid spray part 221b is arranged toward the conveyor belt 21.

[0094] It should be noted that, in the present embodiment, the spray part 221 may be a circular tube, wherein the liquid injection part 221a and the liquid spray part 221b are respectively thin tubes connected to the inside of the spray part 221. Among them, the liquid injection part 221a on the spray part 221 is connected to the external water pipe, and when the ceramic disk 5 loaded with sapphire wafers passes under the primary water washing station 22, the liquid outlet of the liquid spray part 221b is opened, and the surface of the sapphire wafer 4 is sprayed. When the ceramic disk 5 loaded with sapphire wafers leaves the primary water washing station 22, the liquid spray part 221b on the spray part 221 is closed to stop spraying water. Here, in order to better clean the surface of the sapphire wafer 4 in the ceramic disk 5 loaded with sapphire wafers, the spray part 221 can be set to rotate around its central axis at a certain angle. For example, the spray member 221 can rotate 10°, 15°, 20°, 25° or 30° around its central axis so that the water flow from the liquid spray portion 221b in the spray member 221 can comprehensively and thoroughly rinse the surface of the sapphire wafer 4 under the primary water washing station 22.

[0095] In addition, in order to facilitate automatic control of the above process and save resources, a controller can be provided to control the opening and closing of the liquid spraying portion 221b on the spraying member 221. The control method of the controller can adopt the existing technology, which will not be described in detail in this embodiment.

[0096] Reference Figure 1 and Figure 6 As shown, as a possible implementation method, the secondary water washing station 23 includes a fourth mounting frame 231, a fourth supporting surface 232, a third power mechanism 233, a connecting piece 234 and a cleaning piece 235. The fourth mounting frame 231 is arranged above the conveyor belt 21 and across the conveyor belt 21, the fourth supporting surface 232 is arranged on the top of the fourth mounting frame 231, the third power mechanism 233 is arranged on the fourth supporting surface 232, the output end of the third power mechanism 233 passes through the fourth supporting surface 232 and is connected to the connecting piece 234, and the cleaning piece 235 is arranged on the connecting piece 234.

[0097] It should be noted that, in this embodiment, the fourth mounting frame 231 is a square frame, the fourth supporting surface 232 is a square plate that matches the square frame of the fourth mounting frame 231, and the materials of the fourth mounting frame 231 and the fourth supporting surface 232 are both metal materials or hard plastics with a certain strength, the main purpose of which is to stably and reliably fix other components thereon.

[0098] Here, the outer dimensions of the cleaning member 235 are not less than the outer dimensions of the ceramic disk 5 loaded with sapphire wafers, and its purpose is mainly to enable the cleaning range of the cleaning member 235 to cover the entire surface of all sapphire wafers 4 in the ceramic disk 5 loaded with sapphire wafers, so that the cleaning member 235 can thoroughly clean the entire surface of all sapphire wafers 4. In addition, the cleaning member 235 can be fixed on the connecting member 234 by bonding, clamping, etc., and its purpose is mainly to facilitate the replacement of the cleaning member 235. When the ceramic disk 5 loaded with sapphire wafers passes under the secondary water washing station 23, the third power mechanism 233 drives the cleaning member 235 to rotate through the connecting member 234 to wipe and clean the surface of the sapphire wafer 4. Among them, the third power mechanism 233 can be a motor.

[0099] It should also be noted that, in the present embodiment, the lower surface of the cleaning member 235, i.e., the surface of the cleaning member 235 close to the conveyor belt 21, is slightly lower than the upper surface of the sapphire wafer 4 in the ceramic disk 5 loaded with the sapphire wafer. The main purpose is to ensure that when the ceramic disk 5 loaded with the sapphire wafer passes under the cleaning member 235, the lower surface of the cleaning member 235 can contact and wipe the upper surface of the sapphire wafer 4.

[0100] In addition, in order to facilitate the above process to be automatically controlled, a third sensor can be provided to detect whether there is a ceramic plate 5 loaded with sapphire wafers under the secondary water washing station 23. When the third sensor detects that there is a ceramic plate 5 loaded with sapphire wafers under the secondary water washing station 23, the third sensor sends a signal to the controller, and at this time, the controller controls the third power mechanism 233 to start moving. Among them, the relevant contents about the electrical connection between the controller and the third sensor and the third power mechanism 233 can be realized by using the existing technology, and this embodiment will not be repeated here.

[0101] As a possible implementation, the cleaning member 235 is a flexible cleaning member.

[0102] It should be noted that, in the present embodiment, the cleaning member 235 may be made of a flexible material such as a sponge or cotton cloth, or may be other flexible cleaning members that can achieve the same cleaning effect, and the present embodiment does not limit this.

[0103] As a possible implementation, the cleaning member 235 is an annular cleaning member.

[0104] It should be noted that, in the present embodiment, the cleaning member 235 is in the shape of a ring. The purpose of such arrangement is, on the one hand, to save materials, and on the other hand, to adapt to the ring-shaped arrangement of the sapphire wafer 4 in the ceramic disk 5 for loading the sapphire wafer, so that during the cleaning process, the surface of each sapphire wafer 4 arranged along the ring can be thoroughly cleaned by the cleaning member 235.

[0105] Reference Figure 7 and Figure 8 As shown, as a possible implementation, a through water injection hole 234 a is further provided on the connecting member 234 , and a water outlet of the water injection hole 234 a is located in the ring of the annular cleaning member and is arranged toward the conveyor belt 21 .

[0106] It should be noted that, in this embodiment, the shape of the connecting member 234 is a trumpet shape, wherein one end of the trumpet mouth is connected to the cleaning member 235, and the end away from the trumpet mouth is fixed to the output end of the third power mechanism 233. The water injection hole 234a penetrates the side wall of the end of the connecting member 234 away from the trumpet mouth, and the water outlet of the water injection hole 234a is located in the ring of the annular cleaning member and is arranged toward the conveyor belt 21. The main purpose is to enable the water flow from the water injection hole 234a to first rinse the surface of the sapphire wafer 4, and then wipe the surface of the sapphire wafer 4 through the cleaning member 235, so that the sapphire wafer 4 has a clean surface after passing through the secondary water washing station 23.

[0107] In addition, in order to facilitate automatic control of the above process, a solenoid valve may be provided at the water injection hole 234a, and the water injection hole 234a may be controlled by controlling the on and off of the solenoid valve through a controller.

[0108] Reference Figure 1 and Figure 6 As shown, as a possible implementation method, the secondary water washing station 23 also includes a stopping mechanism 236 for stopping the ceramic plate 5 loaded with sapphire wafers undergoing secondary cleaning on the conveyor belt 21 from being conveyed to the air-drying station 24, the stopping mechanism 236 includes a fourth power mechanism 236a and a stopper 236b, the fourth power mechanism 236a is arranged on the fourth supporting surface 232, and along the conveying direction of the conveyor belt 21, the fourth power mechanism 236a is located behind the third power mechanism 233, the output end of the fourth power mechanism 236a passes through the fourth supporting surface 232 and is connected to the stopper 236b, wherein the output direction of the fourth power mechanism 236a is vertical.

[0109] It should be noted that, in this embodiment, the fourth power mechanism 236a can be a cylinder, and the cylinder is set to a vertical direction to drive the stopper 236b connected to its output end to perform telescopic movement in the vertical direction. Here, the lowest height to which the stopper 236b can be lowered needs to be lower than the surface height of the ceramic disk 5 loaded with the sapphire wafer. The purpose of such a setting is to enable the stopper 236b to stop the ceramic disk 5 loaded with the sapphire wafer when the sapphire wafer 4 is cleaned under the secondary water washing station 23, thereby preventing the sapphire wafer 4 from being transferred to the next station without being fully cleaned. In addition, when the stopper 236b stops the ceramic disk 5 loaded with sapphire wafers, it may cause collision with the side wall of the ceramic disk 5 loaded with sapphire wafers, so the working surface of the stopper 236b, that is, the side of the stopper 236b for contacting the ceramic disk 5 loaded with sapphire wafers, can be processed into an arc shape that matches the side wall of the ceramic disk 5 loaded with sapphire wafers, so as to increase the contact area between the stopper 236b and the ceramic disk 5 loaded with sapphire wafers, thereby reducing the risk of collision. Here, the material of the stopper 236b can also be set to rubber or silicone, etc., to further reduce the risk of collision when the stopper 236b contacts the ceramic disk 5 loaded with sapphire wafers.

[0110] In addition, in order to facilitate automatic control of the above process, the controller can also be used to control the fourth power mechanism 236a to indirectly control the stopper 236b connected to the fourth power mechanism 236a to perform a stopping movement, so as to stop the ceramic plate 5 loaded with sapphire wafers under the secondary water washing station 23. The relevant content about the electrical connection between the controller and the fourth power mechanism 236a can be realized by using the existing technology, and this embodiment will not be repeated here.

[0111] Reference Figure 1 and Fig.10 As shown, as a possible implementation method, the air-drying station 24 includes an air-drying piece 241, which is arranged above the conveyor belt 21. The interior of the air-drying piece 241 is hollow, and the air-drying piece 241 is provided with an air inlet portion 241a and an air outlet portion 241b which are connected to the interior thereof, and the air outlet of the air outlet portion 241b is arranged toward the conveyor belt 21.

[0112] It should be noted that, in this embodiment, the air-drying part 241 may be in the shape of a circular tube, and an air inlet 241a that can be connected to an external air pipe and an air outlet 241b that can be used to spray air to the surface of the sapphire wafer 4 are provided on its side wall. Here, the air inlet 241a may be an opening provided on the side wall of the air-drying part 241 and connected to the interior thereof, and the air outlet 241b may be a thin tube connected to the interior of the air-drying part 241. Here, the air outlet 241b is provided as a thin tube connected to the interior of the air-drying part 241, mainly for the purpose of enabling the air outlet of the air outlet 241b to have a longer spraying range, so that the gas can be sprayed to the surface of the sapphire wafer 4, and finally the water stains remaining on the sapphire wafer 4 are removed. Here, in order to improve the air-drying effect, the air-drying piece 241 can be arranged to rotate around its central axis at a certain angle. For example, the air-drying piece 241 can rotate around its central axis by 10°, 15°, 20°, 25° or 30°, so that the gas from the air outlet 241b on the air-drying piece 241 can fully and thoroughly dry the surface of the sapphire wafer 4 under the air-drying station 24.

[0113] In addition, in order to facilitate the above process to be automatically controlled, the air-drying unit 241 can be controlled by the controller, so that when the ceramic plate 5 loaded with sapphire wafers passes through the air-drying station 24, the sapphire wafers 4 loaded thereon are just dried by the gas from the air-drying unit 241. The relevant contents about the electrical connection between the air-drying unit 241 and the controller can be realized by using the existing technology, and will not be repeated in this embodiment.

[0114] Reference Figure 1 and Fig.11 As shown, as a possible implementation method, the measuring device of the sapphire wafer also includes a waste liquid treatment station 6, which includes a drainage structure and a waste liquid outlet structure 61 arranged under the conveyor belt 21, wherein the horizontal projection of the waste liquid outlet structure 61 covers the horizontal projection of the drainage structure.

[0115] It should be noted that, in this embodiment, the drainage structure is used to draw out excess water discharged from the primary water washing station 22 and the secondary water washing station 23 from the conveyor belt 21, and the waste liquid outlet structure 61 is used to receive the water discharged from the drainage structure and guide this part of the water to the outside.

[0116] There are three ways to implement the drainage structure:

[0117] One implementation method is that the drainage structure is disposed on the conveyor belt 21 , and the drainage structure is a plurality of through holes opened on the conveyor belt 21 .

[0118] It should be noted that, in this embodiment, under the premise of ensuring the conveying effect of the conveyor belt 21, multiple through holes of the drainage structure can be evenly opened on the conveyor belt 21, so that the wastewater generated in the primary water washing station 22 and the secondary water washing station 23 can be smoothly discharged through the multiple through holes to the waste liquid outlet structure 61 under the conveyor belt 21, and finally this part of the wastewater is guided to the outside through the waste liquid outlet structure 61.

[0119] The second implementation method is that the drainage structure is arranged on the side of the conveyor belt 21, baffles are arranged on both sides of the conveyor belt 21, and the drainage structure is a gap reserved between the conveyor belt 21 and the baffles.

[0120] It should be noted that, in this embodiment, the drainage structure can be set as a gap between the conveyor belt 21 and the baffle, and the size of this gap is based on the ability to smoothly discharge the wastewater generated in the primary water washing station 22 and the secondary water washing station 23. Compared with the structure in which the drainage structure is a plurality of through holes evenly opened on the conveyor belt 21, which will damage the surface structure of the conveyor belt 21 and reduce its service life, the waste liquid structure is set as a gap between the conveyor belt 21 and the baffle, which can completely retain the surface structure of the conveyor belt 21, thereby extending the service life of the conveyor belt 21. During operation, the wastewater generated in the primary water washing station 22 and the secondary water washing station 23 is discharged through the gap to the waste liquid outlet structure 61 below the conveyor belt 21, and finally this part of the wastewater is guided to the outside through the waste liquid outlet structure 61.

[0121] A third implementation method is that a part of the drainage structure is arranged on the conveyor belt 21, that is, a part of the drainage structure is a plurality of through holes opened on the conveyor belt 21, and the other part is arranged on the side of the conveyor belt 21, that is, baffles are arranged on both sides of the conveyor belt 21, and the other part of the drainage structure is a gap reserved between the conveyor belt 21 and the baffle.

[0122] It should be noted that, in this embodiment, the implementation method of the drainage structure combines the situations described in the above two embodiments, and its drainage effect is better than the drainage effect of the drainage structure in the above two embodiments, so that the wastewater generated by the primary water washing station 22 and the secondary water washing station 23 during operation can be discharged more promptly to the waste liquid outlet structure 61 under the conveyor belt 21, and this part of the wastewater is guided to the outside through the waste liquid outlet structure 61.

[0123] Reference Fig.11 As shown, as a possible implementation, the waste liquid outlet structure 61 includes a waste liquid storage box 611, and the waste liquid storage box 611 is provided with a liquid collecting port 611a and a liquid outlet 611b, the liquid collecting port 611a is located at the top of the waste liquid storage box 611, and the liquid outlet 611b is located at the bottom of the waste liquid storage box 611, wherein the horizontal projection of the liquid collecting port 611a covers the horizontal projection of the liquid discharge structure.

[0124] It should be noted that, in this embodiment, the waste liquid storage box 611 may be in an inverted pyramid shape, wherein the large end of the pyramid is set as the liquid collection port 611a, and the liquid outlet 611b is set at the small end of the pyramid. Compared with the waste liquid storage box 611 being in an upright pyramid shape, wherein the small end of the pyramid is set as the liquid collection port 611a, and the liquid outlet 611b is set at the large end of the pyramid, the arrangement in this embodiment can more conveniently collect and discharge the waste water generated in the primary washing station 22 and the secondary washing station 23.

[0125] Reference Figures 1 to 11 As shown, the specific working principle of the measuring device for the sapphire wafer is as follows:

[0126] When in use, the ceramic disk 5 loaded with sapphire wafers is placed on the second carrier 13 in the loading station 1. At this time, the second sensor detects that the ceramic disk 5 loaded with sapphire wafers is placed on the second carrier 13, and the second sensor sends a signal to the controller, and the controller controls the second power mechanism 14 to move. Specifically, the controller controls the second power mechanism 14 to start moving, and makes the buffer 141 provided on the output end of the second power mechanism 14 contact the side wall of the ceramic disk 5 loaded with sapphire wafers, and the second power mechanism 14 pushes the ceramic disk 5 loaded with sapphire wafers to move toward the conveying direction of the conveyor belt 21 through the buffer 141. Due to the auxiliary effect of the second auxiliary member 15, the ceramic disk 5 loaded with sapphire wafers can be smoothly delivered from the second carrier 13 to the conveyor belt 21.

[0127] At the same time, the controller controls the liquid spraying part 221b on the spraying member 221 in the primary water washing station 22 to spray water toward the conveyor belt 21. When the ceramic plate 5 loaded with sapphire wafers passes under the primary water washing station 22, the sapphire wafers 4 loaded thereon are washed by the water. At this time, the controller controls the fourth power mechanism 236a in the stop mechanism 236 to drive the stopper 236b to move vertically downward until the stopper 236b can stop the ceramic plate 5 loaded with sapphire wafers on the conveyor belt 21 from continuing to move forward.

[0128] Afterwards, the ceramic plate 5 loaded with sapphire wafers continues to move along the conveying direction of the conveyor belt 21 to the bottom of the secondary water washing station 23, and is detected by the third sensor, which sends a signal to the controller, and the controller controls the third power mechanism 233 to move, and the third power mechanism 233 drives the cleaning member 235 to rotate through the connecting member 234, so that the cleaning member 235 cleans the surface of the sapphire wafer 4 in the ceramic plate 5 loaded with sapphire wafers. At the same time, the controller controls the electromagnetic valve provided in the water injection hole 234a to control the water flow to flow into the surface of the sapphire wafer 4 through the water injection hole 234a on the connecting member 234, and under the joint action of the water flow and the cleaning member 235, the surface of the sapphire wafer 4 is cleaned for the second time.

[0129] When the third power mechanism 233 works for a preset time, that is, when the cleaning member 235 completely cleans the surfaces of all sapphire wafers 4, the controller controls the third power mechanism 233 to stop moving. At the same time, the controller controls the fourth power mechanism 236a to drive the stopper 236b to retract upward, so that the ceramic plate 5 loaded with sapphire wafers that have been cleaned twice can pass smoothly under the secondary water washing station 23.

[0130] Afterwards, the ceramic plate 5 loaded with sapphire wafers continues to move forward along the conveying direction of the conveyor belt 21, and at this time, the controller controls the air-drying station 24 to open. When the ceramic plate 5 loaded with sapphire wafers passes under the air-drying station 24, the controller controls the air outlet 241b on the air-drying member 241 to open, so that the air outlet 241b performs air-drying treatment on the surface of the sapphire wafer 4 in the ceramic plate 5 loaded with sapphire wafers.

[0131] Afterwards, the ceramic disk 5 loaded with sapphire wafers continues to move along the conveying direction of the conveyor belt 21 until it is delivered to the first carrier 33 with the assistance of the first auxiliary member 35. At this time, the first sensor detects that the ceramic disk 5 loaded with sapphire wafers is placed on the first carrier 33, and the first sensor sends a signal to the controller. The controller controls the first power mechanism 34 to drive the first carrier 33 to rotate. Since the ceramic disk 5 loaded with sapphire wafers is placed on the first carrier 33, the ceramic disk 5 loaded with sapphire wafers also rotates until the first carrier 33 rotates a circle, and the controller controls the first power mechanism 34 to stop moving. In this process, as the ceramic disk 5 loaded with sapphire wafers rotates, the sapphire wafers 4 also rotate. Therefore, the thickness of the sapphire wafers 4 in the ceramic disk 5 loaded with sapphire wafers can be detected by the measuring structure 36 to finally obtain the TTV values ​​of these sapphire wafers 4. At this point, the use process of the sapphire wafer measurement device is completed.

[0132] The preferred embodiments of the present disclosure are described in detail above in conjunction with the accompanying drawings; however, the present disclosure is not limited to the specific details in the above embodiments. Within the technical concept of the present disclosure, a variety of simple modifications can be made to the technical solution of the present disclosure, and these simple modifications all fall within the protection scope of the present disclosure.

[0133] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present disclosure will not further describe various possible combinations.

[0134] In addition, various embodiments of the present disclosure may be arbitrarily combined, and as long as they do not violate the concept of the present disclosure, they should also be regarded as the contents disclosed by the present disclosure.

Claims

1. A sapphire wafer measuring device, characterized in that: The invention comprises a loading station (1), a cleaning station (2) and a measuring station (3), wherein the cleaning station (2) comprises a conveyor belt (21) and a primary water washing station (22), a secondary water washing station (23) and an air drying station (24) for air-drying sapphire wafers (4) arranged in sequence along the conveyor belt (21); the loading station (1) is arranged upstream of the conveyor belt (21) and is used to deliver the sapphire wafers (4) to be cleaned to the conveyor belt (21); the measuring station (3) is arranged downstream of the conveyor belt (21) and is used to receive the cleaned sapphire wafers (4) so ​​that the TTV value of the sapphire wafers (4) can be detected; The measuring station (3) comprises a first mounting frame (31), a first supporting surface (32) and a first bearing member (33); the first mounting frame (31) is arranged downstream of the air-drying station (24); the first supporting surface (32) is arranged on the top of the first mounting frame (31); the first bearing member (33) is arranged on the first supporting surface (32); the first bearing member (33) is used to receive the ceramic plate (5) loaded with sapphire wafers delivered from the air-drying station (24); The measuring station (3) further comprises a first auxiliary member (35) arranged on the first supporting surface (32), the first auxiliary member (35) being located on a side of the first carrier (33) close to the air-drying station (24), the first auxiliary member (35) being used to assist in delivering the ceramic plate (5) carrying the sapphire wafer from the air-drying station (24) to the first carrier (33); The first auxiliary component (35) is configured as a roller mounted on the first supporting surface (32), or the first auxiliary component (35) is configured as an arc surface fixed on the first supporting surface (32).

2. The sapphire wafer measuring device according to claim 1, characterized in that: The measuring station (3) further comprises a first power mechanism (34), wherein the first power mechanism (34) is arranged below the first supporting surface (32), and an output end of the first power mechanism (34) passes through the first supporting surface (32) and is connected to the bottom of the first carrier (33), and when the ceramic disk (5) loaded with the sapphire wafer is delivered from the air-drying station (24) to the first carrier (33), the first power mechanism (34) drives the first carrier (33) to rotate.

3. The sapphire wafer measuring device according to claim 1 or 2, characterized in that: The measuring station (3) further comprises a measuring structure (36), wherein the measuring structure (36) comprises a second mounting frame (361), a second supporting surface (362) and a measuring piece (363), wherein the second mounting frame (361) is arranged on the top of the first mounting frame (31), the second supporting surface (362) is arranged on the top of the second mounting frame (361), the second supporting surface (362) is located above the first supporting surface (32) and is parallel to the first supporting surface (32), and the measuring piece (363) is arranged on the second supporting surface (362), and the measuring piece (363) is used to detect the TTV value of the sapphire wafer (4) in the ceramic disk (5) for loading the sapphire wafer placed on the first carrier (33).

4. The sapphire wafer measuring device according to claim 1, characterized in that: The loading station (1) comprises a third mounting frame (11), a third supporting surface (12), a second carrier (13) and a second power mechanism (14); the third mounting frame (11) is arranged upstream of the primary water washing station (22); the third supporting surface (12) is arranged on the top of the third mounting frame (11); the second carrier (13) is arranged on the third supporting surface (12); the second power mechanism (14) is arranged on the third mounting frame (11); and the second power mechanism (14) is used to push the ceramic plate (5) loaded with sapphire wafers placed on the second carrier (13) to deliver it to the primary water washing station (22).

5. The sapphire wafer measuring device according to claim 4, characterized in that: The output end of the second power mechanism (14) is further provided with a buffer component (141), and one end of the buffer component (141) close to the primary water washing station (22) is provided with an arc-shaped surface.

6. The sapphire wafer measuring device according to claim 4 or 5, characterized in that: The loading station (1) further comprises a second auxiliary component (15) arranged on the third supporting surface (12), the second auxiliary component (15) being located on a side of the second carrier (13) close to the primary water washing station (22), the second auxiliary component (15) being used to assist in delivering the ceramic plate (5) loaded with sapphire wafers from the second carrier (13) to the primary water washing station (22).

7. The sapphire wafer measuring device according to claim 1, characterized in that: The primary washing station (22) comprises a hollow spraying member (221), the spraying member (221) being arranged above the conveyor belt (21), the spraying member (221) being provided with a liquid injection portion (221a) and a liquid spraying portion (221b), the liquid injection portion (221a) and the liquid spraying portion (221b) both being connected to the interior of the spraying member (221), and the liquid outlet of the liquid spraying portion (221b) being arranged towards the conveyor belt (21).

8. The sapphire wafer measuring device according to claim 1, characterized in that: The secondary water washing station (23) comprises a fourth mounting frame (231), a fourth supporting surface (232), a third power mechanism (233), a connecting piece (234) and a cleaning piece (235); the fourth mounting frame (231) is arranged above the conveyor belt (21) and across the conveyor belt (21); the fourth supporting surface (232) is arranged on the top of the fourth mounting frame (231); the third power mechanism (233) is arranged on the fourth supporting surface (232); the output end of the third power mechanism (233) passes through the fourth supporting surface (232) and is connected to the connecting piece (234); and the cleaning piece (235) is arranged on the connecting piece (234).

9. The sapphire wafer measuring device according to claim 8, characterized in that: The cleaning element (235) is a flexible cleaning element.

10. The sapphire wafer measuring device according to claim 8, characterized in that: The cleaning element (235) is an annular cleaning element.

11. The sapphire wafer measuring device according to claim 10, characterized in that: The connecting piece (234) is also provided with a through water injection hole (234a), and the water outlet of the water injection hole (234a) is located in the ring shape of the annular cleaning piece and is arranged towards the conveyor belt (21).

12. The sapphire wafer measuring device according to any one of claims 8 to 11, characterized in that: The secondary water washing station (23) further comprises a stopping mechanism (236) for stopping the ceramic plate (5) carrying sapphire wafers undergoing secondary washing on the conveyor belt (21) from being conveyed to the air drying station (24), the stopping mechanism (236) comprising a fourth power mechanism (236a) and a stopping member (236b), the fourth power mechanism (236a) being arranged on the fourth supporting surface (232) and being located behind the third power mechanism (233) along the conveying direction of the conveyor belt (21), the output end of the fourth power mechanism (236a) passing through the fourth supporting surface (232) and being connected to the stopping member (236b), wherein the output direction of the fourth power mechanism (236a) is vertical.

13. The sapphire wafer measuring device according to claim 1, characterized in that: The air-drying station (24) comprises an air-drying piece (241), the air-drying piece (241) being arranged above the conveyor belt (21), the interior of the air-drying piece (241) being hollow, the air-drying piece (241) being provided with an air inlet (241a) and an air outlet (241b) communicating with the interior thereof, the air outlet of the air outlet (241b) being arranged towards the conveyor belt (21).

14. The sapphire wafer measuring device according to claim 1, characterized in that: The sapphire wafer measuring device further comprises a waste liquid treatment station (6), wherein the waste liquid treatment station (6) comprises a drainage structure and a waste liquid outlet structure (61) arranged below the conveyor belt (21), wherein the drainage structure is arranged on the conveyor belt (21), and / or the drainage structure is arranged on the side of the conveyor belt (21), and the horizontal projection of the waste liquid outlet structure (61) covers the horizontal projection of the drainage structure.

15. The sapphire wafer measuring device according to claim 14, characterized in that: The drainage structure is arranged on the conveyor belt (21), and the drainage structure is a plurality of through holes opened on the conveyor belt (21).

16. The sapphire wafer measuring device according to claim 14, characterized in that: The drainage structure is arranged on the side of the conveyor belt (21), baffles are arranged on both sides of the conveyor belt (21), and the drainage structure is a gap reserved between the conveyor belt (21) and the baffles.

17. The sapphire wafer measuring device according to claim 14, characterized in that: A portion of the drainage structure is arranged on the conveyor belt (21), and a portion of the drainage structure is a plurality of through holes provided on the conveyor belt (21); another portion of the drainage structure is arranged on the side of the conveyor belt (21), baffles are provided on both sides of the conveyor belt (21), and another portion of the drainage structure is a gap reserved between the conveyor belt (21) and the baffles.

18. The sapphire wafer measuring device according to any one of claims 14 to 17, characterized in that: The waste liquid outlet structure (61) comprises a waste liquid storage box (611), and the waste liquid storage box (611) is provided with a liquid collecting port (611a) and a liquid outlet (611b), wherein the liquid collecting port (611a) is located at the top of the waste liquid storage box (611), and the liquid outlet (611b) is located at the bottom of the waste liquid storage box (611), wherein the horizontal projection of the liquid collecting port (611a) covers the horizontal projection of the liquid discharge structure.

Citation Information

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