Substrate Processing System and Substrate Processing Method

Abstract

The present invention relates to a substrate processing system and a substrate processing method. The substrate processing system includes: a protective film forming liquid supply unit that supplies a protective film forming liquid to one surface of the substrate; a protective film forming unit that cures or hardens the protective film forming liquid to form a protective film on one surface of the substrate; an adsorption unit that adsorbs one surface of the substrate; a processing unit that performs a specified process on the other surface of the substrate while one surface of the substrate is adsorbed to the adsorption unit; and a removal liquid supply unit that has a removal liquid ejection port for ejecting a removal liquid for removing the protective film, and supplies the removal liquid from the removal liquid ejection port toward one surface of the substrate.

Description

[0001] [Related Application]

[0002] This application corresponds to Japanese Patent Application No. 2020-183198 filed with the Japan Patent Office on October 30, 2020, and the entire disclosure of the said application is incorporated herein by reference. Technical Field

[0003] The present invention relates to a substrate processing system for processing a substrate and a substrate processing method for processing a substrate. Substrates to be processed include, for example, semiconductor wafers, substrates for flat panel displays (FPDs) such as liquid crystal display devices and organic electroluminescence (EL) display devices, substrates for optical discs, substrates for magnetic discs, substrates for magneto-optical discs, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like. Background Art

[0004] Adsorbing and holding (vacuum adsorption) one side of a substrate may cause contact marks on that side. In recent years, in order to achieve miniaturization of semiconductor elements, an EUV lithography technique using an extreme ultraviolet (EUV) exposure machine or the like for pattern transfer has been proposed. In the miniaturization of semiconductor elements, contamination of the back surface (the surface in contact with the stage) of the substrate has become a problem from the viewpoints of stage contamination and defocusing of the EUV exposure machine. It is desired to remove the contact marks caused by adsorption and holding.

[0005] Then, Japanese Patent Laid-Open No. 2002-141311 and Japanese Patent Laid-Open No. 2012-74545 disclose the following: A protective film is formed on the main surface of the substrate, and while adsorbing and holding one side of the substrate on which the protective film is formed, a specified process is performed on the substrate.

[0006] Japanese Patent Laid-Open No. 2002-141311 discloses the following: One side of the substrate on which the protective film is formed is held by vacuum adsorption on a holding plate, and the other side of the substrate is pressed against an abrasive cloth attached to a rotating platen to process the other side of the substrate.

[0007] Japanese Patent Laid-Open No. 2012-74545discloses the following: A protective film is formed on one side (printed wiring surface) of the substrate, and while holding this side by a chuck, a grinding belt is pressed against it to process the substrate so that a specified inclination angle is formed at the edge portion of the substrate. Summary of the Invention

[0008] The protective film disclosed in Japanese Patent Application Laid-Open No. 2002-141311 includes: a first protective film that absorbs the unevenness of the substrate and is an adhesive such as wax; and a second protective film that covers the first protective film and has corrosion resistance. The protective film disclosed in Japanese Patent Application Laid-Open No. 2012-74545 is formed by coating an adhesive on a film. Therefore, the cleaning step for removing the protective film or the protective film from the substrate becomes large-scale.

[0009] Specifically, Japanese Patent Application Laid-Open No. 2002-141311 discloses the following: The substrate is sequentially immersed in a cleaning tank of ammonia water and hydrogen peroxide water, a cleaning tank of IPA, and a cleaning tank of a rinsing liquid, thereby removing the protective film.

[0010] Therefore, an object of the present invention is to provide a substrate processing system and a substrate processing method that can well protect one side of the substrate with a protective film and then well remove the protective film.

[0011] One embodiment of the present invention provides a substrate processing system, which includes: a protective film forming liquid supply unit that supplies a protective film forming liquid to one side of the substrate; a protective film forming unit that cures or hardens the protective film forming liquid to form a protective film on one side of the substrate; an adsorption unit that adsorbs one side of the substrate; a processing unit that performs a specified process on the other side of the substrate in a state where one side of the substrate is adsorbed to the adsorption unit; and a removal liquid supply unit that has a removal liquid ejection port for ejecting a removal liquid for removing the protective film, and supplies the removal liquid from the removal liquid ejection port toward one side of the substrate.

[0012] In this substrate processing system, a specified process can be performed on the other side in a state where the side on which the protective film is formed is adsorbed by the adsorption unit. Therefore, it is possible to suppress the adsorption unit from contaminating one side of the substrate.

[0013] Examples of the specified process include a peripheral process, a brushing process, a coating process, etc. The peripheral process refers to a process of supplying a cleaning liquid to the peripheral portion of the other side of the substrate and cleaning the peripheral portion of the other side of the substrate. The brushing process refers to a process of pressing a cleaning member against the other side of the substrate and cleaning the other side of the substrate. The coating process refers to a process of coating a resist film on the other side of the substrate.

[0014] The substrate processing system can be configured to perform a plurality of processes among the peripheral process, the brushing process, and the coating process. It is also possible to expose the resist film through an exposure unit after performing the coating process.

[0015] After performing a specified treatment, the protective film can be removed from one side of the substrate by spraying the removal liquid from the removal liquid outlet toward the substrate. This eliminates the need to use multiple liquids to remove the protective film, nor does it require immersing the substrate in a cleaning tank. In other words, the protective film can be removed from one side of the substrate with the simple step of spraying the removal liquid from the removal liquid outlet.

[0016] As a result, one side of the substrate can be well protected by the protective film, and after a predetermined process is performed in this state, the protective film can be well removed from the substrate.

[0017] In one embodiment of the present invention, the substrate processing system further includes: a holding unit for holding the substrate horizontally; and a turning unit for turning the substrate so that one of the first surface and the other surface of the substrate faces upward.

[0018] The protective film forming liquid supply unit is configured to supply the protective film forming liquid to one side of the substrate held by the holding unit from one side in the vertical direction. The suction unit is configured to suction one side of the substrate from the other side in the vertical direction. Furthermore, the processing unit is configured to perform the specified processing on the other side of the substrate suctioned by the suction unit from the one side in the vertical direction.

[0019] According to this substrate processing system, after supplying the protective film-forming liquid to one side of the substrate from one vertical side, the flipping unit flips the substrate so that the one side faces the other vertical side. This allows the suction unit to be attached to the one side of the substrate from the other vertical side. Therefore, even when supplying the protective film-forming liquid to one main surface of the substrate and suctioning it by the suction unit are performed from opposite vertical sides of the substrate, the substrate's posture can be appropriately adjusted.

[0020] As a result, one side of the substrate can be well protected by the protective film, and after a predetermined process is performed in this state, the protective film can be well removed.

[0021] In one embodiment of the present invention, the protective film forming liquid supply unit includes a protective film forming liquid discharge port for discharging the protective film forming liquid from above toward the substrate held by the holding unit. The adsorption unit includes an adsorption surface for adsorbing the substrate from below.

[0022] In a configuration where the protective film-forming liquid is supplied to the substrate from below, there is a risk that the protective film-forming liquid will fall from the substrate before spreading across one surface. On the other hand, in a configuration where the protective film-forming liquid is ejected from a protective film-forming liquid ejection port and deposited onto one surface of the substrate from above, the protective film-forming liquid deposited onto one surface will not separate from the surface due to its own weight, but will instead spread across the surface. This makes it easier to uniformly supply the protective film-forming liquid to all areas of the surface.

[0023] In addition, in a configuration in which the adsorption surface abuts against the substrate from above to adsorb the substrate, it is necessary to support the substrate from below while adsorbing the substrate from above by the adsorption unit. On the other hand, if the adsorption unit has an adsorption surface that adsorbs the substrate from below, the substrate can be adsorbed to the adsorption surface in a state where the substrate is placed on the adsorption surface. Therefore, compared with the configuration in which the adsorption unit adsorbs the substrate from above, the adsorption operation becomes easier.

[0024] In one embodiment of the present invention, the removal liquid supply unit is configured to supply a removal liquid to the substrate held by the holding unit. That is, the operation of supplying the removal liquid by the removal liquid supply unit and the operation of supplying the protective film forming liquid by the protective film forming liquid supply unit are performed in a state where the substrate is held by the common holding unit. Therefore, compared with a configuration in which cleaning tanks for separately storing a plurality of liquids are provided, the protective film can be removed from the substrate using a substrate processing system having a simple configuration.

[0025] In one embodiment of the present invention, the holding unit includes: a gripping member that grips the peripheral portion of the substrate and holds the substrate at a specified holding position; and a support base that supports the gripping member and is disposed at a distance from the holding position.

[0026] According to this substrate processing system, the substrate is held by the holding unit in a state of being spaced apart from the support base. Therefore, the protective film forming liquid can be supplied to one surface of the substrate without the other surface of the substrate coming into contact with the support base. Thus, it is possible to suppress the phenomenon of contaminating the other surface when the protective film forming liquid is supplied.

[0027] In one embodiment of the present invention, the protective film forming unit includes a substrate rotation unit that rotates the substrate held by the holding unit by rotating the support base.

[0028] Therefore, after the protective film forming liquid is supplied to one surface of the substrate, it is not necessary to move the substrate from the holding unit to another unit, and the protective film can be directly formed while the substrate is held by the holding unit. Therefore, it is possible to suppress the phenomenon that the thickness of the protective film forming liquid is uneven at each position on one surface of the substrate due to the impact applied to the substrate when the substrate is moved. Thus, the substrate can be well protected by the protective film on one surface.

[0029] In one embodiment of the present invention, the protective film forming liquid supplied to one surface of the substrate by the protective film forming liquid supply unit contains a solvent and a solute. The solute contains a highly soluble component and a low soluble component having a lower solubility in the removal liquid than the highly soluble component. The protective film formed by the protective film forming unit contains a highly soluble solid formed by the highly soluble component and a low soluble solid formed by the low soluble component. Moreover, the removal liquid supplied from the removal liquid supply unit dissolves the highly soluble solid, whereby the protective film is peeled off from one surface of the substrate.

[0030] According to this substrate processing system, the solubility of the highly soluble component in the removal liquid is higher than the solubility of the low soluble component in the removal liquid. Therefore, the highly soluble solid formed by the highly soluble component is more easily dissolved in the removal liquid than the low soluble solid formed by the low soluble component.

[0031] Therefore, by supplying the removal liquid to the surface of the substrate, the highly soluble solid is dissolved in the removal liquid, and gaps are formed in the protective film. On the other hand, the low soluble solid does not dissolve in the removal liquid but remains in a solid state.

[0032] Thus, the highly soluble solid can be dissolved in the removal liquid, and the low soluble solid can be maintained in a solid state. Therefore, the removal liquid reaches the interface between the substrate and the low soluble solid via the gaps (paths) formed by the dissolution of the highly soluble solid.

[0033] In this way, the removal liquid can quickly act on the interface between the protective film and the substrate, and most of the protective film can be maintained in a solid state. Here, before supplying the protective film forming liquid, there may be a case where removal objects such as fine particles adhere to one surface of the substrate. Even in this case, the low soluble component can be removed from one surface of the substrate while maintaining a solid state. Therefore, the removal liquid can act on the interface between the low soluble solid and the substrate while holding the removal object with the low soluble solid.

[0034] As a result, the protective film can be quickly peeled off from the substrate, and the removal object and the protective film can be efficiently removed from the substrate together.

[0035] Another embodiment of the present invention provides a substrate processing system, which includes: a protective film forming liquid supply unit that supplies a protective film forming liquid to a non-element surface of a substrate; a protective film forming unit that solidifies or hardens the protective film forming liquid to form a protective film on the non-element surface of the substrate; and an adsorption unit that adsorbs the non-element surface of the substrate. In this substrate processing system, the protective film can be a film that can be removed by supplying a removal liquid.

[0036] According to this substrate processing system, the non-element surface on which a protective film capable of being removed by supplying a removal liquid is formed is adsorbed by the adsorption unit. Therefore, while protecting the non-element surface, the substrate can be processed (peripheral processing, brushing processing, coating processing, etc.), and then the protective film is removed from the non-element surface. Therefore, there is no need to use a variety of liquids to remove the protective film, nor is it necessary to immerse the substrate in a cleaning tank. That is, by the simple step of supplying the removal liquid, the protective film can be removed from one side of the substrate.

[0037] As a result, the non-element surface of the substrate can be well protected by the protective film, and after processing the substrate in this state, the protective film can be well removed from the substrate.

[0038] Another embodiment of the present invention provides a substrate processing method, which includes: a protective film forming liquid supply step of supplying a protective film forming liquid to one side of the substrate; a protective film forming step of curing or hardening the protective film forming liquid on one side of the substrate to form a protective film on one side of the substrate; a processing step of performing a specified processing on the other side of the substrate while adsorbing the side of the substrate on which the protective film is formed to an adsorption unit; and a removal step of supplying a removal liquid from a removal liquid ejection port toward one side of the substrate after the processing step to remove the protective film from one side of the substrate.

[0039] According to this substrate processing method, a specified processing can be performed on the other side while the side on which the protective film is formed is adsorbed by the adsorption unit. Therefore, it is possible to suppress the adsorption unit from contaminating one side of the substrate.

[0040] As the specified processing, as described above, peripheral processing, brushing processing, coating processing, etc. can be exemplified. Multiple processes among peripheral processing, brushing processing, and coating processing can be performed, or an anti-resist film can be exposed after performing the coating processing.

[0041] By spraying the removal liquid from the removal liquid ejection port toward one side of the substrate after performing the specified processing, the protective film can be removed from one side of the substrate. Therefore, there is no need to use a variety of liquids to remove the protective film, nor is it necessary to immerse the substrate in a cleaning tank. That is, by the simple step of spraying the removal liquid from the removal liquid ejection port, the protective film can be removed from one side of the substrate.

[0042] As a result, one side of the substrate can be well protected by the protective film, and after performing the specified processing in this state, the protective film can be well removed from the substrate.

[0043] In yet another embodiment of the present invention, the step of supplying the protective film forming liquid includes the following steps: spraying the protective film forming liquid from a protective film forming liquid ejection port facing one surface of the substrate horizontally held by the holding unit from one side in the vertical direction toward the first main surface of the substrate. After the step of supplying the protective film forming liquid in the substrate processing method, the method further includes a first turning step of turning the substrate so that the first main surface of the substrate faces the other side in the vertical direction. Further, after the first turning step, the processing step includes the following steps: adsorbing the adsorption unit to one surface of the substrate from the other side in the vertical direction and performing the specified processing on the other surface of the substrate in a state where the substrate is adsorbed to the adsorption unit.

[0044] According to this substrate processing method, after supplying the protective film forming liquid to one surface of the substrate from one side in the vertical direction, the substrate is turned so that one surface of the substrate faces the other side in the vertical direction. Thereby, the adsorption unit can be adsorbed to one surface of the substrate from the other side in the vertical direction. Therefore, even when performing the operation of supplying the protective film forming liquid to one surface of the substrate and the operation of adsorbing the substrate by the adsorption unit from opposite sides in the vertical direction of the substrate, the posture of the substrate can be appropriately adjusted.

[0045] As a result, one surface of the substrate can be well protected by the protective film, and after performing the specified processing in this state, the protective film can be well removed.

[0046] In yet another embodiment of the present invention, after the processing step in the substrate processing method, the method further includes a second turning step of turning the substrate so that one surface of the substrate faces one side in the vertical direction. Further, the removing step includes the following steps: supplying a removing liquid from a removing liquid ejection port facing one surface of the substrate horizontally held by the holding unit from one side in the vertical direction toward one surface of the substrate.

[0047] The operations of supplying the removing liquid to one surface of the substrate and adsorbing the substrate by the adsorption unit are performed from opposite sides in the vertical direction of the substrate. By turning the substrate after the processing step so that one surface faces one side in the vertical direction, the removing liquid can be supplied to one surface of the substrate in a state where the posture of the substrate is appropriately adjusted.

[0048] In addition, according to this method, the supply of the removing liquid and the supply of the protective film forming liquid are performed while the substrate is held by a common holding unit. Therefore, compared with a configuration in which cleaning tanks for accommodating various liquids are provided separately, the protective film can be removed from the substrate using a simple substrate processing method.

[0049] In still another embodiment of the present invention, the step of supplying the protective film forming liquid includes a step of ejecting the protective film forming liquid, that is, ejecting the protective film forming liquid from the protective film forming liquid ejection port provided at a position above the substrate held by the holding unit toward the substrate. Further, the processing step includes the following steps: placing the substrate on the adsorption surface of the adsorption unit from above, and while adsorbing the substrate placed on the adsorption surface to the adsorption surface, performing the specified processing on the other surface of the substrate.

[0050] In the method of supplying the protective film forming liquid to the substrate from below, before the protective film forming liquid diffuses on one surface, the protective film forming liquid may fall from the substrate. On the other hand, in the method of ejecting the protective film forming liquid from the protective film forming liquid ejection port and attaching it to one surface of the substrate from above, the protective film forming liquid will not separate from one surface due to its own weight and will diffuse on one surface. Thus, it is easy to uniformly supply the protective film forming liquid to various parts of one surface.

[0051] Further, in the method of making the adsorption surface abut against the substrate from above to adsorb the substrate, it is necessary to support the substrate from below while adsorbing the substrate from above by the adsorption unit. On the other hand, if the adsorption unit has an adsorption surface that adsorbs the substrate from below, the substrate can be adsorbed to the adsorption surface in a state where the substrate is placed on the adsorption surface. Therefore, compared with the configuration in which the adsorption unit adsorbs the substrate from above, the adsorption operation becomes easier.

[0052] In still another embodiment of the present invention, the holding unit has: a gripping member that grips the peripheral portion of the substrate and holds the substrate at a specified holding position; and a support base that supports the gripping member and is disposed at an interval from the holding position.

[0053] According to this substrate processing method, the substrate is held by the holding unit in a state of being spaced apart from the support base. Therefore, the protective film forming liquid can be supplied to one surface of the substrate without the other surface of the substrate contacting the support base. Thus, the phenomenon of contaminating the other surface when supplying the protective film forming liquid can be suppressed.

[0054] In still another embodiment of the present invention, the protective film forming step includes a substrate rotation step, that is, rotating the substrate held by the holding unit by rotating the support base.

[0055] Therefore, after supplying the protective film forming liquid to one surface of the substrate, it is not necessary to move the substrate from the holding unit to other units, and the protective film can be directly formed while the substrate is held by the holding unit. Therefore, the phenomenon of uneven thickness of the protective film forming liquid at various positions on one surface of the substrate caused by impacts acting on the substrate when the substrate is moved can be suppressed. Thus, one surface of the substrate can be well protected by the protective film.

[0056] In yet another embodiment of the present invention, the protective film forming liquid supplied to one surface of the substrate in the protective film forming liquid supply step contains a solvent and a solute. The solute has a highly soluble component and a low soluble component whose solubility in the removal liquid is lower than that of the highly soluble component. The protective film formed in the protective film forming step has a highly soluble solid formed from the highly soluble component and a low soluble solid formed from the low soluble component. Further, in the removal step, the removal liquid dissolves the highly soluble solid, and peels the protective film from one surface of the substrate.

[0057] According to this substrate processing method, the solubility of the highly soluble component in the removal liquid is higher than the solubility of the low soluble component in the removal liquid. Therefore, the highly soluble solid formed from the highly soluble component is more easily dissolved in the removal liquid than the low soluble solid formed from the low soluble component.

[0058] Therefore, by supplying the removal liquid to the surface of the substrate, the highly soluble solid is dissolved in the removal liquid, and gaps are formed in the protective film. On the other hand, the low soluble solid is not dissolved in the removal liquid and remains in a solid state.

[0059] Thus, the highly soluble solid can be dissolved in the removal liquid, and the low soluble solid can be maintained in a solid state. Therefore, the removal liquid reaches the interface between the substrate and the low soluble solid through the gaps (paths) formed by the dissolution of the highly soluble solid.

[0060] In this way, the removal liquid can quickly act on the interface between the protective film and the substrate, and most of the protective film can be maintained in a solid state. Here, before supplying the protective film forming liquid, there may be a case where removal objects such as fine particles adhere to one surface of the substrate. Even in this case, the low soluble component can be removed from one surface of the substrate while maintaining a solid state, so that the removal liquid can act on the interface between the low soluble solid and the substrate while holding the removal object with the low soluble solid.

[0061] As a result, the protective film can be quickly peeled from the substrate, and the removal object and the protective film can be efficiently removed from the substrate together.

[0062] The objects, features, and effects described in the present invention, or other objects, features, and effects, are clarified by the description of the embodiments described below with reference to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0063] Figure 1A is a plan view showing the configuration of a substrate processing apparatus included in the substrate processing system according to the first embodiment of the present invention.

[0064] Figure 1B is a diagrammatic elevation view for explaining the configuration of the substrate processing apparatus.

[0065] Figure 2 It is a schematic cross-sectional view for explaining a configuration example of a liquid processing unit included in the substrate processing apparatus.

[0066] Figure 3 It is a schematic cross-sectional view for explaining a configuration example of a peripheral processing unit included in the substrate processing apparatus.

[0067] Figure 4A It is a schematic cross-sectional view for explaining a configuration example of a flipping unit included in the substrate processing apparatus.

[0068] Figure 4B It is a cross-sectional view along Figure 4A the IVB-IVB line shown.

[0069] Figure 4C It is a cross-sectional view along Figure 4A the IVC-IVC line shown.

[0070] Figure 4D It is for explaining the state of the substrate after flipping from the state shown in Figure 4C a cross-sectional view.

[0071] Figure 5 It is a block diagram for explaining a configuration example related to the control of the substrate processing system.

[0072] Figure 6 It is a flowchart for explaining the process of the substrate processing system specifically implementing substrate processing.

[0073] Figures 7A - 7I It is a schematic diagram for explaining the state of the substrate when implementing an example of the substrate processing.

[0074] Figures 8A - 8C It is a schematic diagram for explaining the state of the removal of the protective film from the surface of the substrate.

[0075] Figure 9 It is a schematic cross-sectional view for explaining a configuration example of a scrubbing processing device included in the substrate processing apparatus of a modification of the first embodiment.

[0076] Figure 10 It is a flowchart for explaining the process of the substrate processing system of a modification of the first embodiment specifically implementing substrate processing.

[0077] Figure 11 It is a schematic diagram for explaining the state of the substrate when implementing an example of the scrubbing processing step of the substrate processing system of a modification of the first embodiment.

[0078] Figure 12It is a top view showing the configuration of the substrate processing system according to the second embodiment of the present invention.

[0079] Figure 13 It is a schematic side view of a plurality of liquid processing units of a substrate processing apparatus included in the substrate processing system according to the second embodiment.

[0080] Figure 14 It is a schematic top view for explaining a configuration example of a coating processing apparatus included in the substrate processing apparatus according to the second embodiment.

[0081] Figure 15 It is a schematic cross-sectional view for explaining a configuration example of the coating processing apparatus.

[0082] Figure 16 It is a flowchart for explaining the process of specifically performing substrate processing by the substrate processing system according to the second embodiment.

[0083] Figures 17A - 17C It is a schematic diagram showing the state of a substrate when the substrate processing system according to the second embodiment performs an example of substrate processing. Detailed implementation mode

[0084] <First Embodiment>

[0085] Figure 1A It is a top view showing the configuration of a substrate processing apparatus 2 included in a substrate processing system 1 according to the first embodiment of the present invention. Figure 1B It is a diagrammatic elevation view for explaining the configuration of the substrate processing apparatus 2.

[0086] The substrate processing system 1 is a system for processing substrates W such as silicon wafers. The substrate processing system 1 includes: a single-substrate processing apparatus (single processing apparatus) 2 that processes the substrate W piece by piece; and a control device 3 that controls the substrate processing apparatus 2. In the present embodiment, the substrate W is a disc-shaped substrate.

[0087] The substrate processing apparatus 2 includes: a plurality of liquid processing apparatuses 4 that process the substrate W using liquids; a plurality of container holding units (load ports) LP that respectively hold a plurality of containers (carriers) C for placing and accommodating a plurality of substrates W processed by the liquid processing apparatuses 4; and a transfer robot IR that loads and unloads the substrate W to and from the containers C on the container holding units LP.

[0088] The substrate W has, for example, one surface W1 (first surface) and another surface W2 (second surface) on the opposite side of the one surface W1. The substrate W is accommodated in the container C with the other surface W2 facing upward. The other surface W2 is, for example, an element surface formed with a circuit pattern, and the one surface W1 is, for example, a non-element surface without a circuit pattern. It is not necessarily the case that the one surface W1 is a non-element surface, and both surfaces of the substrate W may be element surfaces formed with a circuit pattern.

[0089] The substrate processing apparatus 2 further includes: a main transfer robot CR that transfers the substrate W between the transfer robot IR and loads and unloads the substrate W to and from a plurality of liquid processing apparatuses 4; and a flipping unit 5 that receives the substrate W from the transfer robot IR and the main transfer robot CR and flips the substrate W so that one of the one surface W1 and the other surface W2 of the substrate W faces upward.

[0090] The transfer robot IR and the main transfer robot CR are disposed on a transfer path TR extending from the container holding unit LP to the plurality of liquid processing apparatuses 4. Both the transfer robot IR and the main transfer robot CR are articulated arm robots each including a pair of articulated arms AR and a pair of hands H, and the pair of hands H are respectively provided at the front ends of the pair of articulated arms AR with a vertical separation therebetween.

[0091] The plurality of liquid processing apparatuses 4 form four processing towers respectively disposed at four horizontally separated positions. Each processing tower includes a plurality of ( Figure 1B three in this example) liquid processing apparatuses 4 stacked in the vertical direction. Two of the four processing towers are disposed on each side of the transfer path TR.

[0092] The plurality of liquid processing apparatuses 4 include: a plurality of coating / peeling processing apparatuses 4A that coat a protective film on the one surface W1 of the substrate W or peel the protective film from the one surface W1; and a peripheral processing apparatus 4B that cleans the peripheral portion of the other surface W2 of the substrate W.

[0093] In the present embodiment, two processing towers on the transfer robot IR side are constituted by a plurality of coating / peeling processing apparatuses 4A, and two processing towers on the opposite side of the transfer robot IR are constituted by a plurality of peripheral processing apparatuses 4B.

[0094] Each coating / peeling processing apparatus 4A includes: a first rotary chuck 6A that horizontally holds the substrate W and rotates the substrate W about a vertical rotation axis A1 (vertical axis) passing through the central portion of the substrate W; a first processing cup 7A that surrounds the first rotary chuck 6A and receives the liquid scattered from the substrate W; and a first chamber 8A that houses the first rotary chuck 6A and the first processing cup 7A.

[0095] Each peripheral processing device 4B includes: a second rotary chuck 6B that rotates a substrate W about a vertical rotation axis A2 (vertical axis) passing through the central portion of the substrate W while horizontally holding the substrate W; a second processing cup 7B that surrounds the second rotary chuck 6B and receives the liquid scattered from the substrate W; and a second chamber 8B that houses the second rotary chuck 6B and the second processing cup 7B.

[0096] In the first chamber 8A, an entrance / exit (not shown) for the main transfer robot CR to carry in or out the substrate W is formed. In the first chamber 8A, a shutter unit (not shown) for opening or closing the entrance / exit is provided. Similarly to the first chamber 8A, the second chamber 8B also has an entrance / exit (not shown) and a shutter unit (not shown). The main transfer robot CR is an example of a transfer unit that transfers the substrate W between the flipping unit 5, the first rotary chuck 6A, and the second rotary chuck 6B.

[0097] Figure 2 It is a schematic cross-sectional view for explaining a configuration example of the coating and stripping processing device 4A. Figure 2 The illustration of the first chamber 8A is omitted.

[0098] The first rotary chuck 6A is an example of a holding and rotating unit that rotates the substrate W about the rotation axis A1 while holding the substrate W in a horizontal posture.

[0099] The first rotary chuck 6A includes: a holding unit 20 that holds the substrate W; a first rotary shaft 22 that extends in the vertical direction along the rotation axis A1 and is configured to rotate integrally with the holding unit 20; a first rotary motor 23 that rotates the first rotary shaft 22 about the rotation axis A1; and a first motor housing 24 that houses the first rotary shaft 22 and the first rotary motor 23.

[0100] The holding unit 20 includes: a plurality of suction cup pins 20A that grip the peripheral portion of the substrate W; and a first rotary base 20B that supports the plurality of suction cup pins 20A. The first rotary base 20B has a disc shape along the horizontal direction. The plurality of suction cup pins 20A are arranged at intervals in the circumferential direction on the upper surface of the first rotary base 20B. The holding unit 20 is also referred to as a substrate holder.

[0101] An opening / closing unit 28 is provided to drive the opening and closing of the plurality of suction cup pins 20A. When the plurality of suction cup pins 20A are in the closed state through the opening / closing unit 28, they grip the substrate W. When the plurality of suction cup pins 20A are in the open state through the opening / closing unit 28, the gripping of the substrate W is released. The plurality of suction cup pins 20A in the open state release the gripping of the substrate W and support the peripheral portion of the lower surface of the substrate W from below. The opening / closing unit 28 includes, for example, a link mechanism (not shown) and a drive source (not shown). The drive source includes, for example, an electric motor.

[0102] The suction cup pin 20A is an example of a gripping member that grips the peripheral portion of the substrate W and holds the substrate W at a specified holding position ( Figure 2 the position of the substrate W shown, the first holding position). The first rotating base 20B is an example of a supporting base that supports a plurality of suction cup pins 20A and is arranged at an interval from the holding position.

[0103] The upper end portion of the first rotating shaft 22 protrudes from the first motor housing 24 and is coupled to the first rotating base 20B.

[0104] By rotating the first rotating shaft 22 using the first rotating motor 23, the first rotating base 20B is rotated. As a result, the substrate W rotates together with the first rotating base 20B about the rotation axis A1. The first rotating motor 23 is an example of a first substrate rotating unit (substrate rotating unit) that rotates the substrate W about the rotation axis A1.

[0105] At a position above the first rotating base 20B, a blocking plate 25 is provided, and the blocking plate 25 blocks the ambient gas in the space between the upper surface of the substrate W held by the first rotating suction cup 6A and the ambient gas outside the space.

[0106] The blocking plate 25 has an opposing surface 25a that faces the upper surface of the substrate W held by the first rotating suction cup 6A from above. The blocking plate 25 is formed in a disk shape having a diameter substantially the same as or larger than that of the substrate W. A support shaft 26 is fixed to the side of the blocking plate 25 opposite to the opposing surface 25a.

[0107] The blocking plate 25 is connected to a blocking plate lifting unit 27 that lifts and lowers the blocking plate 25. The blocking plate lifting unit 27 includes, for example, an actuator (not shown) such as an electric motor or a cylinder that lifts and drives the support shaft 26. The blocking plate 25 can rotate about the rotation axis A1.

[0108] The first processing cup 7A includes: a plurality of baffles 30 that intercept the liquid scattered from the substrate W held by the first rotating base 20B; a plurality of cups 31 that catch the liquid guided downward by the plurality of baffles 30; and an exhaust barrel 32 that surrounds all the baffles 30 and cups 31 in a plan view.

[0109] Figure 2 An example in which three baffles 30 and three cups 31 are provided is shown. Each baffle 30 corresponds to a cup 31 one by one, and each cup 31 catches the liquid guided downward by the corresponding baffle 30.

[0110] A first baffle lifting unit 37 for lifting and lowering the plurality of baffles 30 is connected to the plurality of baffles 30. The first baffle lifting unit 37 lifts and lowers the plurality of baffles 30 individually between a lower position and an upper position. The first baffle lifting unit 37 includes a plurality of actuators (not shown) for driving the lifting and lowering of the respective baffles 30. The actuators can be electric motors or cylinders.

[0111] The first baffle lifting unit 37 positions the baffle 30 at any position within the range from the lower position to the upper position. The upper position of each baffle 30 means that the upper end of the baffle 30 is disposed at a position above the position of the substrate W (first holding position) held by the plurality of suction pins 2OA. The lower position of each baffle 30 means that the upper end of the baffle 30 is disposed at a position below the first holding position of the substrate W.

[0112] By arranging at least one of the plurality of baffles 30 at the upper position, the liquid scattered from the substrate W can be intercepted by the baffle 30. By arranging all the baffles 30 at the lower position, the main transfer robot CR (refer to Figure 1A ) can approach the first rotary chuck 6A.

[0113] The coating and peeling processing apparatus 4A further includes a plurality of nozzles for supplying a fluid to the substrate W held by the first rotary chuck 6A.

[0114] The plurality of nozzles include: a plurality of moving nozzles 9 (a first moving nozzle 9A and a second moving nozzle 9B) that move along the horizontal and vertical directions and supply the fluid to the substrate W from above; a central nozzle 10 that supplies the fluid to the central portion of the substrate W from above; and a lower surface nozzle 11 that supplies the fluid to the substrate W from below.

[0115] The plurality of moving nozzles 9 are respectively connected to a plurality of nozzle moving units 36 that move them along the horizontal and vertical directions. Each moving nozzle 9 can move along the horizontal direction between a center position and an initial position (retracted position). When each moving nozzle 9 is located at the center position, it faces the central region of the upper surface of the substrate W.

[0116] When each moving nozzle 9 is located at the initial position, it does not face the upper surface of the substrate W and is located outside the first processing cup 7A in a plan view. Each moving nozzle 9 can approach the upper surface of the substrate W or retract upward from the upper surface of the substrate W by moving along the vertical direction.

[0117] Each nozzle moving unit 36 includes: an arm (not shown), which is coupled to the corresponding moving nozzle 9 and extends horizontally; a rotating shaft (not shown), which is coupled to the arm and extends in the vertical direction; a lifting actuator such as an electric motor or a cylinder (not shown), which raises and lowers the rotating shaft; and a horizontal actuator such as an electric motor or a cylinder (not shown), which rotates the rotating shaft to horizontally move the arm. Each moving nozzle 9 is a rotating nozzle, and may be a linear motion nozzle different from the present embodiment.

[0118] The front end of the first moving nozzle 9A has a discharge port 9a. The discharge port 9a is provided at a position above the first holding position. When the first moving nozzle 9A is located above the substrate W, the discharge port 9a faces the upper surface of the substrate W from above. The first moving nozzle 9A is configured to supply (spray) a protective film forming liquid and a removing liquid onto the upper surface of the substrate W held by the first rotary chuck 6A.

[0119] The first moving nozzle 9A is an example of a protective film forming liquid nozzle that supplies a protective film forming liquid to the upper surface of the substrate W, and is also an example of a removing liquid nozzle that supplies a removing liquid such as ammonia water to the upper surface of the substrate W. The discharge port 9a is an example of a protective film forming liquid discharge port that discharges a protective film forming liquid, and is also an example of a removing liquid discharge port that discharges a removing liquid.

[0120] The protective film forming liquid is a liquid that forms a protective film for protecting the main surface of the substrate W after curing or hardening. The protective film is a film with a fixed shape that holds removal objects such as fine particles present on the substrate W. The protective film forming liquid contains a solute and a solvent. The protective film forming liquid cures or hardens by at least a part of the solvent contained in the protective film forming liquid volatilizing (evaporating).

[0121] Here, "curing" means that, for example, as the solvent volatilizes, the solute solidifies due to forces acting between molecules or atoms, etc. "Hardening" means that, for example, the solute solidifies due to chemical changes such as polymerization or crosslinking. Therefore, "curing or hardening" means that the solute "solidifies" due to various factors.

[0122] The protective film forming liquid contains a low solubility component and a high solubility component that is more soluble in the removing liquid as the solute. As the low solubility component and the high solubility component, substances with different solubilities in the following removing liquid can be used. The low solubility component is, for example, phenol formaldehyde. The high solubility component is, for example, 2,2-bis(4-hydroxyphenyl)propane.

[0123] The solvent contained in the protective film forming liquid only needs to be a liquid that can dissolve the low solubility component and the high solubility component. The solvent contained in the protective film forming liquid is preferably a liquid that is compatible (able to mix) with the removing liquid. Compatibility means the property that two liquids are mutually soluble and mix.

[0124] The protective film forming liquid may contain an anti-corrosion component. The anti-corrosion component is, for example, BTA (benzotriazole), and the relevant details will be described below.

[0125] The protective film is mainly composed of a low-solubility component (low-solubility solid) in a solid state and a high-solubility component (high-solubility solid) in a solid state. A solvent may remain in the protective film. The details of each component (solvent, low-solubility component, high-solubility component, and anti-corrosion component) contained in the protective film forming liquid will be described below.

[0126] The removing liquid is a liquid used to strip the protective film and remove it from the main surface of the substrate W. The removing liquid may be an alkaline aqueous solution (alkaline liquid) other than ammonia water. Specific examples of the alkaline aqueous solution other than ammonia water include an aqueous solution of TMAH (tetramethylammonium hydroxide) and an aqueous solution of choline, and any combination thereof. The removing liquid may be pure water (preferably DIW), or a neutral or acidic aqueous solution (non-alkaline aqueous solution).

[0127] A common pipe 40 for guiding the protective film forming liquid and the removing liquid to the first moving nozzle 9A is connected to the first moving nozzle 9A. A protective film forming liquid pipe 41 for guiding the protective film forming liquid to the common pipe 40 and a removing liquid pipe 42 for guiding the removing liquid to the common pipe 40 are connected to the common pipe 40.

[0128] If the protective film forming liquid valve 51 inserted in the protective film forming liquid pipe 41 is opened, the protective film forming liquid is continuously ejected downward from the ejection port 9a of the first moving nozzle 9A. If the removing liquid valve 52 inserted in the removing liquid pipe 42 is opened, the removing liquid is continuously ejected downward from the ejection port 9a of the first moving nozzle 9A.

[0129] The first moving nozzle 9A, the common pipe 40, and the protective film forming liquid pipe 41 constitute a protective film forming liquid supply unit 13A that supplies the protective film forming liquid from the ejection port 9a toward the upper surface of the substrate W. The first moving nozzle 9A, the common pipe 40, and the removing liquid pipe 42 constitute a removing liquid supply unit 13B that supplies the removing liquid from the ejection port 9a toward the upper surface of the substrate W.

[0130] A rinse liquid pipe 43 for guiding the rinse liquid to the second moving nozzle 9B is connected to the second moving nozzle 9B. If the rinse liquid valve 53 inserted in the rinse liquid pipe 43 is opened, the rinse liquid is continuously ejected downward from the second moving nozzle 9B.

[0131] The second moving nozzle 9B and the rinse liquid pipe 43 constitute a rinse liquid supply unit that supplies (ejects) a rinse liquid such as carbonated water toward the upper surface of the substrate W held by the first rotary chuck 6A. The second moving nozzle 9B is an example of a rinse liquid nozzle.

[0132] The rinsing liquid is not limited to carbonated water. The rinsing liquid may be a liquid containing at least one of DIW (Deionized Water), carbonated water, electrolyzed ionized water, hydrochloric acid water with a diluted concentration (for example, 1 ppm or more and 100 ppm or less), ammonia water with a diluted concentration (for example, 1 ppm or more and 100 ppm or less), and reduced water (hydrogen water).

[0133] The central nozzle 10 is received in the support shaft 26 of the blocking plate 25. The ejection port 10a provided at the front end of the central nozzle 10 is exposed from the communication hole 25b formed in the blocking plate 25 and faces the central region of the upper surface of the substrate W from above.

[0134] The central nozzle 10 includes: a plurality of tubes that eject fluid downward; and a cylindrical tube sleeve 33 that surrounds the plurality of tubes. The plurality of tubes and the tube sleeve 33 extend in the vertical direction along the rotation axis A1. The plurality of tubes have a residue removal liquid tube 34 that supplies a residue removal liquid such as IPA to the upper surface of the substrate W. The residue removal liquid is a liquid used to dissolve and remove the residue of the protective film, and the residue of the protective film is the residue remaining on the upper surface of the substrate W after the protective film is peeled off from the upper surface of the substrate W by the removal liquid and discharged. In addition to the residue removal liquid tube 34, the plurality of tubes may also have a rinsing liquid tube or a gas tube.

[0135] The residue removal liquid tube 34 is connected to a residue removal liquid pipe 44 that guides the residue removal liquid to the residue removal liquid tube 34. When the residue removal liquid valve 54 inserted in the residue removal liquid pipe 44 is opened, the residue removal liquid is ejected from the residue removal liquid tube 34 (central nozzle 10) toward the central region of the upper surface of the substrate W in a continuous flow state. The residue removal liquid tube 34 (central nozzle 10) and the residue removal liquid pipe 44 constitute a residue removal liquid supply unit. The central nozzle 10 is an example of a residue removal liquid nozzle.

[0136] The residue removal liquid is preferably compatible with the rinsing liquid and the protective film forming liquid. The residue removal liquid can dissolve the residue of the protective film. Therefore, the residue removal liquid is also called a residue dissolving liquid. The residue removal liquid is, for example, an organic solvent and may be a liquid containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, PGEE (propylene glycol monoethyl ether), and trans-1,2-dichloroethylene.

[0137] The lower nozzle 11 is inserted through an insertion hole 21a opened at the central portion of the upper surface of the first rotary base 20B. The ejection port 11a of the lower nozzle 11 is exposed from the upper surface of the first rotary base 20B. The ejection port 11a of the lower nozzle 11 faces the central region of the lower surface (lower main surface) of the substrate W from below. The central region of the lower surface of the substrate W refers to the region of the lower surface of the substrate W that includes the rotation center of the substrate W.

[0138] The lower nozzle 11 is configured to eject fluids such as a rinsing liquid like carbonated water, a chemical liquid such as hydrofluoric acid (HF: hydrogen fluoride), and a heat medium such as warm water. A fluid pipe 46 for guiding the fluid to the lower nozzle 11 is connected to the lower nozzle 11. The fluid pipe 46 can be configured to selectively guide a rinsing liquid such as carbonated water, a chemical liquid such as hydrofluoric acid, and a heat medium such as warm water. A fluid valve 56 for opening or closing its flow path is inserted in the fluid pipe 46.

[0139] A gas flow path 12 is formed in the space between the lower nozzle 11 and the insertion through-hole 21a of the first rotary base 20B. The gas flow path 12 is connected to a lower gas pipe 47 inserted through the space between the inner circumferential surface of the first rotary shaft 22 and the lower nozzle 11. When the lower gas valve 57 inserted in the lower gas pipe 47 is opened, a gas such as nitrogen (N2) is ejected from the gas flow path 12 toward the portion around the rotation center of the lower surface of the substrate W. By ejecting the gas from the gas flow path 12, it is possible to suppress the liquid adhering to the upper surface of the substrate W from moving to the lower surface of the substrate W. Furthermore, it is possible to suppress fog from entering between the lower surface of the substrate W and the first rotary base 20B.

[0140] The gas ejected from the gas flow path 12 is not limited to nitrogen. The gas ejected from the gas flow path 12 can also be air. In addition, the gas ejected from the gas flow path 12 can also be an inert gas other than nitrogen. An inert gas means a gas that is inert to the upper surface of the substrate W and is not limited to nitrogen. As an example of an inert gas, in addition to nitrogen, noble gases such as argon can be cited.

[0141] Figure 3 It is a schematic cross-sectional view for explaining a configuration example of the peripheral processing device 4B. Figure 3 The illustration of the second chamber 8B is omitted.

[0142] The second rotary chuck 6B includes: a second rotary base 61 that adsorbs to the lower surface of the substrate W and holds the substrate W in a horizontal posture; a second rotary shaft 62 that extends in the vertical direction along the rotation axis A2 and is coupled to the second rotary base 61; a second rotary motor 63 that rotates the second rotary shaft 62 around the rotation axis A2; and a second motor housing 64 that houses the second rotary shaft 62 and the second rotary motor 63.

[0143] The second rotary base 61 has an adsorption surface 61a for adsorbing to the lower surface of the substrate W. The adsorption surface 61a is, for example, the upper surface of the second rotary base 61 and is a circular surface through which the rotation axis A2 passes through the central portion. The diameter of the adsorption surface 61a is smaller than the diameter of the substrate W. The upper end portion of the second rotary shaft 62 protrudes from the second motor housing 64 and is coupled to the second rotary base 61.

[0144] The second rotating base 61 and the second rotating shaft 62 are inserted with a suction path 65. The suction path 65 has a suction port 65a exposed from the center of the adsorption surface 61a of the second rotating base 61. The suction path 65 is connected to a suction pipe 66. The suction pipe 66 is connected to a suction device 67 such as a vacuum pump.

[0145] A suction valve 68 for opening or closing the path is inserted on the suction path 65. By opening the suction valve 68, the substrate W disposed on the adsorption surface 61a of the second rotating base 61 is sucked by the suction port 65a of the suction path 65. Thus, the substrate W is adsorbed from below to the adsorption surface 61a and held at a specified holding position ( Figure 3 the position of the substrate W shown in, the second holding position). The second rotating base 61 (the second rotating chuck 6B) is an example of an adsorption unit. The second rotating chuck 6B is also referred to as an adsorption rotating unit that rotates the substrate W while adsorbing the substrate W to the adsorption surface 61a.

[0146] By rotating the second rotating shaft 62 using the second rotating motor 63, the second rotating base 61 can be rotated. Thus, the substrate W rotates around the rotation axis A2 together with the second rotating base 61. The second rotating motor 63 is an example of a second substrate rotating unit that rotates the substrate W around the rotation axis A2.

[0147] The second processing cup 7B includes: a plurality of baffles 70 that intercept the liquid scattered from the substrate W adsorbed on the adsorption surface 61a of the second rotating base 61; a plurality of cups 71 that catch the liquid guided downward by the plurality of baffles 70; and an exhaust barrel 72 that surrounds all the baffles 70 and cups 71 in a plan view.

[0148] Figure 3 An example in which two baffles 70 and two cups 71 are provided is shown. The two baffles 70 surround the second rotating chuck 6B in a concentric circle shape. The two cups 71 also surround the second rotating chuck 6B in a concentric circle shape.

[0149] Each baffle 70 corresponds to a cup 71 one by one, and each cup 71 catches the liquid guided downward by the corresponding baffle 70.

[0150] A second baffle lifting unit 75 for lifting and lowering the plurality of baffles 70 is connected to the plurality of baffles 70. The second baffle lifting unit 75 lifts and lowers the plurality of baffles 70 individually between a lower position and an upper position. The second baffle lifting unit 75 includes a plurality of actuators (not shown) that drive the lifting and lowering of the respective baffles 70. The actuator can be an electric motor or a cylinder.

[0151] The second baffle lifting unit 75 positions the baffle 70 at any position within the range from the lower position to the upper position. The upper position of each baffle 70 means that the upper end of the baffle 70 is disposed at a position above the position of the substrate W (the second holding position) held by the second rotary chuck 6B. The lower position of each baffle 70 means that the upper end of the baffle 70 is disposed at a position below the second holding position of the substrate W.

[0152] By disposing at least one of the plurality of baffles 70 at the upper position, the liquid scattered from the substrate W can be intercepted by the baffle 70. By disposing all the baffles 70 at the lower position, the main transfer robot CR (refer to Figure 1A ) can be brought close to the second rotary chuck 6B.

[0153] The peripheral processing device 4B further includes: a center alignment unit 76 that horizontally moves the substrate W in such a manner that the central portion of the upper surface of the substrate W approaches the rotation axis A2; and a peripheral nozzle head 14 that supplies various processing fluids to the peripheral portion of the upper surface of the substrate W held by the second rotary chuck 6B. The peripheral portion of the upper surface of the substrate W refers to a region including the outer peripheral end (front end) of the substrate W and a portion of the upper surface of the substrate W near the outer peripheral end.

[0154] The peripheral nozzle head 14 includes: a plurality of peripheral nozzles 15 that respectively supply various processing fluids to the peripheral portion of the upper surface of the substrate W; and a nozzle support member 16 that commonly supports the plurality of peripheral nozzles 15.

[0155] A processing fluid pipe 48 that guides the processing fluid to the corresponding peripheral nozzle 15 is connected to each peripheral nozzle 15. A processing fluid valve 58 that opens or closes the flow path in the corresponding processing fluid pipe 48 is inserted in each processing fluid pipe 48.

[0156] The plurality of peripheral nozzles 15 include: a first peripheral chemical solution nozzle 15A that ejects a chemical solution such as APM (a mixed solution of ammonia water and hydrogen peroxide water); a second peripheral chemical solution nozzle 15B that ejects a chemical solution such as hydrofluoric acid; a peripheral rinse liquid nozzle 15C that ejects a rinse liquid such as carbonated water; and a peripheral gas nozzle 15D that ejects a gas such as nitrogen.

[0157] The liquid chemicals ejected from the first peripheral liquid chemical nozzle 15A and the second peripheral liquid chemical nozzle 15B are not limited to APM or hydrofluoric acid. The liquid chemical ejected from the peripheral nozzle 15 may be, for example, a liquid containing at least one of sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acids (e.g., citric acid, oxalic acid, etc.), organic bases (e.g., TMAH: tetramethylammonium hydroxide, etc.), surfactants, and preservatives. As an example of the liquid chemical formed by mixing them, in addition to APM, SPM (sulfuric acid / hydrogen peroxide mixture) etc. can also be cited. APM is also called SC1 (Standard Clean 1).

[0158] As the rinse liquid ejected from the peripheral rinse liquid nozzle 15C, it can be selected from those exemplified as the rinse liquid used in the coating and stripping processing device 4A. As the gas ejected from the peripheral gas nozzle 15D, it can be selected from those exemplified as the gas used in the coating and stripping processing device 4A.

[0159] A head support arm 38 that supports the peripheral nozzle head 14 is coupled to the nozzle support member 16. By moving the head support arm 38 using the peripheral nozzle moving unit 39, the peripheral nozzle head 14 can be moved along the horizontal direction and the vertical direction. The peripheral nozzle head 14 is configured to move along the horizontal direction between the center position and the initial position (retracted position). When any one of the plurality of processing fluid valves 58 is opened when the peripheral nozzle head 14 is at the peripheral position between the central position and the initial position, the corresponding processing fluid is supplied from the corresponding peripheral nozzle 15 to the peripheral portion of the upper surface of the substrate W.

[0160] The peripheral nozzle moving unit 39 includes: a lifting actuator (not shown) such as an electric motor or a cylinder that lifts and lowers the head support arm 38; and a horizontal moving actuator (not shown) such as an electric motor or a cylinder that moves the head support arm 38 along the horizontal direction. The head support arm 38 is, for example, a rotary arm. The head support arm 38 does not necessarily have to be a rotary arm and may also be a linear motion arm.

[0161] Figure 4A It is a schematic cross-sectional view for explaining a configuration example of the flipping unit 5. Figure 4B is along Figure 4A the cross-sectional view taken along the line IVB-IVB shown. Figure 4C is along Figure 4A the cross-sectional view taken along the line IVC-IVC shown. Figure 4D is for explaining the state of the substrate W after Figure 4C being flipped from the state shown.

[0162] Refer to Figure 4AThe flipping unit 5 includes: a housing shell 80 for accommodating the substrate W; a supporting mechanism 81 for supporting the substrate W in the housing shell 80 when transferring the substrate W between the transfer robot IR or the main transport robot CR; and a clamping and flipping mechanism 90 for clamping the substrate W in the housing shell 80 and flipping it upside down.

[0163] Both the transfer robot IR and the main transport robot CR can enter the interior of the storage housing 80. The storage housing 80 is formed with a first opening 80a for receiving a pair of hands H of the transfer robot IR (see Figure 1A and a second opening 80b for allowing a hand H (see FIG1A ) of the main transfer robot CR to enter the storage housing 80. In this embodiment, the storage housing 80 can accommodate two substrates W at the same time.

[0164] Reference Figure 4A and Figure 4B The support mechanism 81 includes: a plurality of first support members 82, which support the substrate W from below in such a manner that the substrate W is located at a specified reference position (upper reference position); a plurality of second support members 83, which support the substrate W from below in such a manner that the substrate W is located at the reference position (upper reference position) at positions opposite to the plurality of first support members 82 in the horizontal direction; a first actuator 84, which moves the plurality of first support members 82 between a support position for supporting the substrate W and a retreat position for retreating downward from the support position; and a second actuator 85, which moves the plurality of second support members 83 between a support position for supporting the substrate W and a retreat position for retreating downward from the support position.

[0165] The first actuator 84 moves the plurality of first support members 82 in the tilted direction so that they move upward and closer to the plurality of second support members 83. The first actuator 84 can be an electric motor or a pneumatic cylinder. The second actuator 85 moves the plurality of second support members 83 in the tilted direction so that they move upward and closer to the plurality of first support members 82. Like the first actuator 84, the second actuator 85 can also be an electric motor or a pneumatic cylinder.

[0166] In this embodiment, the interior of the housing 80 will accommodate two substrates W at the same time, so the support mechanism 81 includes: a plurality of first lower support parts 86, which are located below the first support parts 82 (first upper support parts) and support the substrate W from below in a manner that the substrate W is located at a specified reference position (lower reference position); and a plurality of second lower support parts 87, which are located below the plurality of second support parts 83 (second upper support parts) and support the substrate W from below in a manner that the substrate W is located at the reference position (lower reference position) and are horizontally opposite to the plurality of first lower support parts 86.

[0167] The support mechanism 81 further includes: a plurality of first connecting portions 88 that connect the first support member 82 and the first lower support member 86 corresponding to the first support member 82; and a plurality of second connecting portions 89 that connect the second support member 83 and the second lower support member 87 corresponding to the second support member 83. Accordingly, the plurality of first lower support members 86 move along an inclined direction together with the plurality of first support members 82 by the first actuator 84. Further, the plurality of second lower support members 87 move along an inclined direction together with the plurality of second support members 83 by the second actuator 85. Specifically, the plurality of first lower support members 86 move along an inclined direction between a support position for supporting the substrate W at a lower reference position and a retracted position retracted downward from the support position. The plurality of second lower support members 87 move along an inclined direction between a support position for supporting the substrate W at a lower reference position and a retracted position retracted downward from the support position.

[0168] Figure 4C The illustration of the support mechanism 81 is omitted. Refer to Figure 4A and Figure 4C The clamping and flipping mechanism 90 includes: a pair of first opposing members 91; a pair of second opposing members 92 that oppose the pair of first opposing members 91 in the horizontal direction and clamp the substrate W at the reference position together with the corresponding first opposing members 91; a first horizontal movement mechanism 93 that moves the pair of first opposing members 91 in the opposing direction F in which the first opposing members 91 and the second opposing members 92 oppose each other; and a second horizontal movement mechanism 94 that moves the pair of second opposing members 92 in the opposing direction F. The first horizontal movement mechanism 93 is, for example, an electric motor or a cylinder. The second horizontal movement mechanism 94 is, for example, an electric motor or a cylinder.

[0169] The clamping and flipping mechanism 90 includes: a first support shaft 95 that supports the pair of first opposing members 91 and extends in the horizontal direction; a second support shaft 96 that supports the pair of second opposing members 92 and extends coaxially with the first support shaft 95; a first rotating shaft 97 that is inserted through the first support shaft 95 so as to rotate integrally with the first support shaft 95 about the central axis A3 of the first support shaft 95; and a second rotating shaft 98 that is inserted through the second support shaft 96 so as to rotate integrally with the second support shaft 96 about the central axis A3. The first rotating shaft 97 and the first support shaft 95 can be integrally rotated, for example, by engaging with each other with protrusions and recesses. The second rotating shaft 98 and the second support shaft 96 can be integrally rotated, for example, by engaging with each other with protrusions and recesses.

[0170] The clamping and flipping mechanism 90 further includes: a rotating mechanism 99 that rotates the first rotating shaft 97 about the central axis A3; and a pair of shaft connecting members 100 that connect the first rotating shaft 97 and the second rotating shaft 98. The rotating mechanism 99 includes, for example, an electric motor or a cylinder.

[0171] A pair of first opposing members 91 are symmetrically arranged about the central axis A3, and a pair of second opposing members 92 are symmetrically arranged about the central axis A3. The clamping and flipping mechanism 90 further includes: a first connecting member 101 that connects the pair of first opposing members 91 to the first support shaft 95; and a second connecting member 102 that connects the pair of second opposing members 92 to the second support shaft 96.

[0172] Next, the flipping operation of the flipping unit 5 for flipping the substrate W will be described.

[0173] First, the transfer robot IR or the main transfer robot CR (refer to Figure 1A ) as Figure 4B shown, places one substrate W (hereinafter referred to as "substrate WA") on the plurality of first support members 82 and the plurality of second support members 83 of the support mechanism 81, and places one substrate W (hereinafter referred to as "substrate WB") on the plurality of first lower support members 86 and the plurality of second lower support members 87 of the support mechanism 81.

[0174] Next, for simplicity, only the flipping operation of substrate WA will be described. Regarding the operation of substrate WB, it is the same as the operation of replacing "the plurality of first support members 82" and "the plurality of second support members 83" in the following operation description with "the plurality of first lower support members 86" and "the plurality of second lower support members 87".

[0175] With the substrate WA placed on the plurality of first support members 82 and the plurality of second support members 83, the first opposing member 91 and the second opposing member 92 are brought closer to each other, thereby clamping the substrate WA by the first opposing member 91 and the second opposing member 92.

[0176] With the substrate WA clamped by the first opposing member 91 and the second opposing member 92, the plurality of first support members 82 and the plurality of second support members 83 are moved obliquely downward toward the retracted position, so that the plurality of first support members 82 and the plurality of second support members 83 are retracted. Thereby, the substrate WA is delivered to the first opposing member 91 and the second opposing member 92.

[0177] After the plurality of first support members 82 and the plurality of second support members 83 are retracted, the first opposing member 91 and the second opposing member 92 are rotated, thereby flipping the substrate WA. In Figure 4C showing the state before flipping, the other side W2 of the substrate WA faces upward, while in Figure 4D showing the state after flipping, the other side W2 of the substrate WA faces downward.

[0178] After the substrate WA is flipped, the plurality of first lower support members 86 and the plurality of second lower support members 87 move obliquely upward toward the support positions, whereby the substrate WA is supported from below by the plurality of first lower support members 86 and the plurality of second lower support members 87. In a state where the substrate WA is supported from below by the plurality of first lower support members 86 and the plurality of second lower support members 87, the first opposing member 91 and the second opposing member 92 are moved so as to be separated from each other, whereby the substrate WA is delivered to the plurality of first lower support members 86 and the plurality of second lower support members 87. In this state, the transfer robot IR and the main transfer robot CR (refer to Figure 1A ) can approach the substrate WA.

[0179] Figure 5 is a block diagram for explaining a configuration example related to the control of the substrate processing system 1. The control device 3 is a computer including a computer main body 3a and a peripheral device 3d connected to the computer main body 3a. The computer main body 3a includes: a CPU 3b (central processing unit), which executes various commands; and a main storage device 3c, which stores information. The peripheral device 3d includes: an auxiliary storage device 3e, which stores information such as a program P; a reading device 3f, which reads information from a removable medium RM; and a communication device 3g, which communicates with other devices such as a host computer.

[0180] The control device 3 is connected to an input device 3A, a display device 3B, and an alarm device 3C. The input device 3A is operated by an operator such as a user or a maintenance person when inputting information to the substrate processing device 2. Information is displayed on the screen of the display device 3B. The input device 3A can be any one of a keyboard, a pointing device, and a touch panel, or can also be a device other than these devices. A touch panel display that also serves as the input device 3A and the display device 3B can also be provided in the substrate processing device 2. The alarm device 3C sends an alarm using one or more of light, sound, text, and graphics. In the case where the input device 3A is a touch panel display, the input device 3A can also serve as the alarm device 3C.

[0181] The CPU 3b executes the program P stored in the auxiliary storage device 3e. The program P in the auxiliary storage device 3e can be one pre-installed in the control device 3, can also be one sent from the removable medium RM to the auxiliary storage device 3e through the reading device 3f, or can also be one sent from an external device such as the host computer HC to the auxiliary storage device 3e through the communication device 3g.

[0182] The auxiliary storage device 3e and the removable medium RM are non-volatile memories that can retain storage without power supply. The auxiliary storage device 3e is, for example, a magnetic storage device such as a hard disk drive. The removable medium RM is, for example, an optical disc such as a CD or a semiconductor memory such as a memory card. The removable medium RM is an example of a recording medium on which a program P is recorded and can be read by a computer. The removable medium RM is a non-transitory tangible recording medium.

[0183] The auxiliary storage device 3e stores a plurality of recipes R. The recipe R is information that defines the processing content, processing conditions, and processing order of the substrate W. The plurality of recipes R are different from each other in at least one of the processing content, processing conditions, and processing order of the substrate W.

[0184] The control device 3 controls the liquid processing device 4, the flipping unit 5, the transfer robot IR, the main transfer robot CR, etc. to process the substrate W according to the recipe R set in the main storage device 3c. The following steps are executed by controlling these components by the control device 3. In other words, a program for executing the following steps is written in the control device 3.

[0185] Figure 6 It is a flowchart showing an example of the substrate processing performed by the substrate processing system 1. Figure 6 It mainly shows the processing achieved by executing the program by the control device 3. Figures 7A - 7I It is a schematic diagram showing the status of each step of the substrate processing performed by the substrate processing system 1.

[0186] In the substrate processing performed by the substrate processing system 1, for example, as Figure 6 shown, the pre-flipping step (step S1), the protective film forming liquid supply step (step S2), the protective film forming step (step S3), the first flipping step (step S4), the peripheral processing step (step S5), the second flipping step (step S6), the protective film removal step (step S7), the rinsing step (step S8), the residue removal step (step S9), the drying step (step S10), and the third flipping step (step S11) are sequentially executed.

[0187] Next, mainly referring to Figures 1A - 3 and Figure 6 the substrate processing performed by the substrate processing system 1 will be described. Figures 7A - 7I will also be referred to as appropriate.

[0188] First, the transfer robot IR transfers the unprocessed substrate W from the container C into the flipping unit 5. One surface W1 (non-element surface) of the substrate W transferred into the flipping unit 5 faces downward. The flipping unit 5 flips the substrate W transferred into the flipping unit 5 so that the surface W1 faces upward (one side in the vertical direction) (step S1: pre-flipping step).

[0189] The main transport robot CR transports the substrate W after being reversed by the reversing unit 5 into the coating and stripping processing device 4A and hands it to the first rotary chuck 6A. Specifically, the substrate W is placed on the plurality of chuck pins 20A in the open state. In this state, the opening and closing unit 28 closes the plurality of chuck pins 20A, thereby Figure 7A As shown, the first spin chuck 6A holds the substrate W horizontally with one surface W1 serving as the upper surface (first substrate holding step).

[0190] Then, the main transport robot CR retreats to the outside of the coating and stripping treatment device 4A and starts the protective film forming liquid supply step (step S2). In the protective film forming liquid supply step, first, the first rotary motor 23 (see Figure 2 ) The first rotation base 20B is rotated. As a result, the substrate W held horizontally on the holding unit 20 is rotated (first substrate rotating step).

[0191] Then, the first nozzle moving unit 36A moves the first moving nozzle 9A to the processing position. The processing position of the first moving nozzle 9A is, for example, the center position. When the first moving nozzle 9A is located at the processing position, the protective film forming liquid valve 51 is opened. Figure 7A As shown, the protective film-forming liquid is supplied (discharged) from the discharge port 9a of the first movable nozzle 9A, i.e., from above (one side in the vertical direction), toward the center of the upper surface (one side W1) of the rotating substrate W (protective film-forming liquid supplying step, protective film-forming liquid discharging step). The protective film-forming liquid supplied to the one side W1 of the substrate W is spread throughout the one side W1 of the substrate W by centrifugal force. As a result, a liquid film 201 of the protective film-forming liquid (protective film-forming liquid film) is formed on the one side W1 of the substrate W (liquid film forming step).

[0192] Supplying the protective film forming liquid from the first moving nozzle 9A continues for a predetermined time, for example, 2 to 4 seconds. During the protective film forming liquid supplying step, the substrate W rotates at a predetermined protective film forming liquid rotation speed, for example, 10 to 1500 rpm.

[0193] Next, a protective film forming step (step S3) is performed. In the protective film forming step, the protective film forming liquid on one side W1 of the substrate W is solidified or hardened, and the particles 203 existing on the one side W1 of the substrate W are formed on the one side W1 of the substrate W (see the following). Figure 8A ) etc. to remove the protective film 200 of the object (refer to Figure 7C ). That is, the protective film 200 is applied on one side W1 of the substrate W.

[0194] In the protective film forming step, the thickness of the protective film forming liquid film 201 on the substrate W is reduced (thin film forming step, rotation stopping step). Specifically, the protective film forming liquid valve 51 is closed. Figure 7B As shown in FIG, the operation of supplying the protective film forming liquid to the substrate W is stopped. Then, the first nozzle moving unit 36A moves the first moving nozzle 9A to the initial position.

[0195] like Figure 7B As shown, in the thinning step, the substrate W is rotated while the supply of the protective film forming liquid to the one side W1 of the substrate W is stopped, so that part of the protective film forming liquid is removed from the one side W1 of the substrate W. As a result, the thickness of the liquid film 201 on the substrate W becomes appropriate.

[0196] The centrifugal force caused by the rotation of the substrate W not only removes the protective film forming liquid from one side W1 of the substrate W, but also acts on the gas in contact with the liquid film 201. Due to the action of the centrifugal force, the gas forms an airflow from the center side of the upper surface (one side W1) of the substrate W toward the peripheral side. Through this airflow, the gaseous solvent in contact with the liquid film 201 is removed from the ambient gas in contact with the substrate W. Therefore, the phenomenon of evaporation (volatilization) of the solvent from the protective film forming liquid on the substrate W is promoted, such as Figure 7C As shown, a protective film 200 is formed (solvent evaporation step, protective film forming step). In the protective film forming step, the first rotary motor 23 functions as an evaporation unit (evaporation promotion unit) for evaporating the solvent in the protective film forming liquid. The first rotary motor 23 constitutes a protective film forming unit 29 (see FIG. 1 ) for solidifying or hardening the protective film forming liquid to form the protective film 200 on the upper surface (one surface W1) of the substrate W. Figure 2 ).

[0197] During the thinning step, the first rotational motor 23 changes the rotation speed of the substrate W to a predetermined thinning speed. The thinning speed is, for example, 300 rpm to 1500 rpm. The rotation speed of the substrate W can be maintained constant within the range of 300 rpm to 1500 rpm, or it can be appropriately changed within the range of 300 rpm to 1500 rpm during the thinning step. The thinning step is performed for a predetermined time, for example, 30 seconds.

[0198] Before the film forming step begins, Figure 7A In the illustrated state, the protective film-forming liquid is present only in the central region of one side W1 of the substrate W, and the protective film-forming liquid valve 51 is closed. In this case, the protective film-forming liquid is diffused throughout the one side W1 of the substrate W by the centrifugal force generated by the rotation of the substrate W, thereby thinning the liquid film 201. Consequently, the amount of protective film-forming liquid removed from the one side W1 of the substrate W can be reduced.

[0199] With the protective film 200 formed on one surface W1, the main transfer robot CR removes the substrate W from the coating and peeling treatment device 4A. Specifically, after stopping the rotation of the substrate W and opening the plurality of suction pins 20A, the main transfer robot CR receives the substrate W from the first rotary chuck 6A. The main transfer robot CR transfers the substrate W removed from the coating and peeling treatment device 4A into the flipping unit 5. The flipping unit 5 flips the substrate W transferred into the flipping unit 5 so that the other surface W2 faces upward (one side in the vertical direction) (step S4: the first flipping step).

[0200] The main transfer robot CR removes the substrate W flipped by the flipping unit 5 from the flipping unit 5 and transfers it into the peripheral processing device 4B. Thus, the substrate W is placed on the adsorption surface 61a of the second rotary base 61 from above in a state where one surface W1 faces downward (the other side in the vertical direction). After the main transfer robot CR places the substrate W on the adsorption surface 61a of the second rotary base 61, it retreats outside the peripheral processing device 4B.

[0201] With the substrate W placed on the adsorption surface 61a, the suction valve 68 is opened. Thus, one surface W1 of the substrate W is adsorbed to the adsorption surface 61a of the second rotary base 61 from below (the other side in the vertical direction). Strictly speaking, the protective film 200 formed on one surface W1 is adsorbed to the adsorption surface 61a. Thus, as Figure 7D shown, the second rotary chuck 6B horizontally holds the substrate W with the other surface W2 as the upper surface (the second substrate holding step).

[0202] In addition, before the start of the peripheral processing step, the center alignment unit 76 can align the substrate W placed on the second rotary base 61 so that the central portion of the substrate W is substantially aligned with the rotation axis A2.

[0203] With the substrate W adsorbed to the second rotary base 61, the second rotary motor 63 rotates the second rotary base 61. Thus, the horizontally held substrate W rotates (the second substrate rotation step).

[0204] Next, the peripheral processing step (step S5) is started, that is, the peripheral portion of the other surface W2 of the substrate W is processed. In the peripheral processing step, first, the peripheral nozzle moving unit 39 moves the head support arm 38 to position the peripheral nozzle head 14 at the peripheral position. With the peripheral nozzle head 14 at the peripheral position, the processing fluid valve 58 is opened, and thus as Figure 7E shown, the processing liquid is supplied from the peripheral nozzle 15 to the peripheral portion of the other surface W2 of the substrate W. That is, the peripheral processing (specified processing) is performed on the upper surface (the other surface W2) of the substrate W in a state adsorbed to the second rotary base 61 (processing step).

[0205] The peripheral nozzle head 14, a plurality of processing fluid pipes 48, a plurality of processing fluid valves 58, a head support arm 38, and a peripheral nozzle moving unit 39 constitute a peripheral processing unit 50 (processing unit). The peripheral processing unit 50 supplies a processing liquid to the peripheral portion of the upper surface (the other surface W2) of the substrate W while the lower surface (one surface W1) of the substrate W is adsorbed to the second rotating base 61 (the second rotating chuck 6B), and performs peripheral processing.

[0206] In the peripheral processing, for example, APM, carbonated water, HF, and carbonated water are sequentially supplied to the peripheral portion of the other surface W2 of the substrate W. After the supply of the processing liquid is completed, the substrate W is rotated at a high speed, and the peripheral portion of the other surface W2 of the substrate W is dried.

[0207] More specifically, in a state where the peripheral nozzle head 14 is located at the peripheral position, the corresponding processing fluid valve 58 is opened, and thereby a liquid medicine such as APM is supplied from the first peripheral liquid medicine nozzle 15A to the peripheral portion of the other surface W2 of the substrate W (the first peripheral liquid medicine processing step).

[0208] After that, the processing fluid valve 58 corresponding to the first peripheral liquid medicine nozzle 15A is closed, and instead, the processing fluid valve 58 corresponding to the peripheral rinsing liquid nozzle 15C is opened. Thereby, a rinsing liquid such as carbonated water is supplied from the peripheral rinsing liquid nozzle 15C to the peripheral portion of the other surface W2 of the substrate W (the first peripheral rinsing processing step).

[0209] After that again, the processing fluid valve 58 corresponding to the peripheral rinsing liquid nozzle 15C is closed, and the processing fluid valve 58 corresponding to the second peripheral liquid medicine nozzle 15B is opened. Thereby, a liquid medicine such as hydrofluoric acid is supplied from the second peripheral liquid medicine nozzle 15B to the peripheral portion of the other surface W2 of the substrate W (the second peripheral liquid medicine processing step). After that, the processing fluid valve 58 corresponding to the second peripheral liquid medicine nozzle 15B is closed, and the processing fluid valve 58 corresponding to the peripheral rinsing liquid nozzle 15C is opened. Thereby, a rinsing liquid such as carbonated water is supplied from the peripheral rinsing liquid nozzle 15C to the peripheral portion of the other surface W2 of the substrate W (the second peripheral rinsing processing step).

[0210] After the second peripheral rinsing processing step, the processing fluid valve 58 is closed, and the second rotation motor 63 accelerates the rotation of the substrate W, so that the substrate W is rotated at a high rotation speed (for example, several thousand rpm) (peripheral drying step). Thereby, the liquid is removed from the substrate W, and the substrate W is dried. If a specified time has elapsed after the start of the high-speed rotation of the substrate W, the second rotation motor 63 stops rotating. Thereby, the rotation of the substrate W stops. In the peripheral processing, gas may also be appropriately ejected from the peripheral gas nozzle 15D.

[0211] The main transfer robot CR unloads the substrate W whose other surface W2 has been peripherally processed from the peripheral processing device 4B. Specifically, after stopping the rotation of the substrate W and closing the suction valve 68, the main transfer robot CR receives the substrate W from the second rotary chuck 6B. The main transfer robot CR loads the substrate W unloaded from the peripheral processing device 4B into the flipping unit 5. The flipping unit 5 flips the substrate W loaded into the flipping unit 5 so that one surface W1 faces upward (one side in the up-down direction) (step S6: second flipping step).

[0212] The main transfer robot CR transports the substrate W flipped by the flipping unit 5 into the coating and stripping processing device 4A and delivers it to the first rotary chuck 6A. Specifically, the substrate W is placed on a plurality of chuck pins 20A in an open state. In this state, the plurality of chuck pins 20A are made into a closed state, whereby, as Figure 7F shown, the first rotary chuck 6A horizontally holds the substrate W with one surface W1 as the upper surface (third substrate holding step).

[0213] Next, after the main transfer robot CR retreats outside the coating and stripping processing device 4A, a protective film removal step (step S7) is started. In the protective film removal step, first, the first rotary motor 23 rotates the first rotary base 20B. Thereby, the horizontally held substrate W rotates (third substrate rotation step).

[0214] After that, the first nozzle moving unit 36A moves the first moving nozzle 9A to the processing position (central position). With the first moving nozzle 9A located at the processing position, the removal liquid valve 52 is opened. Thereby, as Figure 7G shown, from the ejection port 9a of the first moving nozzle 9A, that is, from above (one side in the up-down direction), a removal liquid is supplied (ejected) toward the central region of one surface W1 of the rotating substrate W (removal liquid supply step, removal liquid ejection step). The removal liquid supplied to one surface W1 of the substrate W diffuses to various parts of one surface W1 of the substrate W by centrifugal force. Thereby, the protective film 200 on one surface W1 of the substrate W peels off and is discharged outside the substrate W together with the removal liquid.

[0215] The operation of supplying the removal liquid to one surface W1 of the substrate W continues for a specified time, for example, 60 seconds. In the protective film removal step, the substrate W rotates at a specified removal rotation speed, for example, 800 rpm.

[0216] After the protective film removal step (step S7), a rinsing step (step S8) is performed, that is, the removal liquid is rinsed off the one surface W1 of the substrate W with a rinsing liquid. Specifically, the removal liquid valve 52 is closed. Thereby, the operation of supplying the removal liquid to one surface W1 of the substrate W stops. After the supply of the removal liquid stops, the first nozzle moving unit 36A moves the first moving nozzle 9A to the initial position.

[0217] After the first moving nozzle 9A retracts, the second nozzle moving unit 36B moves the second moving nozzle 9B to the processing position. The processing position of the second moving nozzle 9B is, for example, the central position. With the second moving nozzle 9B in the processing position, the rinse liquid valve 53 is opened. Thus, as Figure 7H shown, rinse liquid is supplied (sprayed) from the second moving nozzle 9B toward the central region of one surface W1 of the rotating substrate W (rinse liquid supply step, rinse liquid spraying step). The rinse liquid supplied to one surface W1 of the substrate W diffuses to various parts of one surface W1 of the substrate W by centrifugal force. Thus, the removal liquid on one surface W1 of the substrate W is washed away by the rinse liquid.

[0218] In the rinsing step, the operation of spraying the rinse liquid from the second moving nozzle 9B continues for a specified time, for example, 30 seconds. In the rinsing step, the substrate W rotates at a specified rinsing rotation speed, for example, 800 rpm.

[0219] After the rinsing step (step S8), a residue removal step (step S9) is performed, that is, the residue of the protective film 200 is removed from one surface W1 of the substrate W by the residue removal liquid. After the protective film is peeled off from the substrate W by the removal liquid and discharged from the substrate W, residues of the protective film 200 still remain on one surface W1 of the substrate W. The residue removal liquid supplied to one surface W1 of the substrate W dissolves such residues of the protective film.

[0220] Specifically, the second nozzle moving unit 36B moves the second moving nozzle 9B to the retracted position. Then, the shutter lifting unit 27 moves the shutter 25 to the processing position.

[0221] Then, with the shutter 25 in the processing position, the residue removal liquid valve 54 is opened. Thus, as Figure 7I shown, residue removal liquid is supplied (sprayed) from the central nozzle 10 toward the central region of one surface W1 of the rotating substrate W (residue removal liquid supply step, residue removal liquid spraying step).

[0222] The residue removal liquid supplied from the central nozzle 10 to one surface W1 of the substrate W is radially diffused by centrifugal force and spreads over various parts of one surface W1 of the substrate W. By centrifugal force, the residue removal liquid in which the residue of the protective film is dissolved is discharged from the periphery of one surface W1 of the substrate W. Thus, the residue of the protective film on the substrate W is removed.

[0223] In the residue removal liquid supply step, the operation of spraying the residue removal liquid from the central nozzle 10 continues for a specified time, for example, 30 seconds. In the residue removal step (step S9), the substrate W rotates at a specified residue removal rotation speed, for example, 300 rpm.

[0224] After the residue removal step, the residue removal liquid valve 54 is closed, and the first rotation motor 23 accelerates the rotation of the substrate W, so that the substrate W rotates at a high rotation speed (e.g., several thousand rpm) (drying step: step S10). Thereby, the liquid is removed from the substrate W, and the substrate W is dried. If a specified time has elapsed after the start of the high-speed rotation of the substrate W, the first rotation motor 23 stops rotating. Thereby, the rotation of the substrate W stops.

[0225] The main transfer robot CR enters the coating and peeling processing apparatus 4A, receives the processed substrate W from the suction pin 20A of the first rotary suction cup 6A, and carries it out of the coating and peeling processing apparatus 4A. The substrate W carried out of the coating and peeling processing apparatus 4A is delivered from the main transfer robot CR to the flipping unit 5. The flipping unit 5 flips the substrate W transferred to the flipping unit 5 so that the other surface W2 faces upward (step S11: the third flipping step). After that, the transfer and conveyance robot IR receives the substrate W from the flipping unit 5 and stores the substrate W in the storage container C (also refer to Figure 1B ).

[0226] Next, Figures 8A - 8C is used to explain in detail the state of peeling of the protective film 200 from the substrate W. Figures 8A - 8C is a schematic diagram for explaining the state of peeling of the protective film 200 from the substrate W.

[0227] As Figure 8A shown, the protective film 200 formed in the protective film forming step (step S3) holds the fine particles 203 attached to the surface of the substrate W. Before the etching component forming process, the protective film 200 contains a highly soluble component in a solid state (highly soluble solid 210) and a low-soluble component in a solid state (low-soluble solid 211). The highly soluble solid 210 and the low-soluble solid 211 are solidified or hardened by evaporation of at least a part of the solvent contained in the protective film forming liquid.

[0228] Referring to Figure 8B , the highly soluble solid 210 is selectively dissolved by the removal liquid. That is, the protective film 200 is partially dissolved (dissolving step, partial dissolving step).

[0229] "Selectively dissolving the highly soluble solid 210" does not mean that only the highly soluble solid 210 in a solid state is dissolved. "Selectively dissolving the highly soluble solid 210" means that a small amount of the low-soluble solid 211 in a solid state is dissolved and most of the highly soluble solid 210 is dissolved.

[0230] Taking the selective dissolution of the highly soluble solid 210 as an opportunity, a through-hole 202 serving as a removal liquid path is formed in a portion where the highly soluble solid 210 is concentrated in the protective film 200 (through-hole forming step).

[0231] The portion where the high solubility solid 210 exists in the partial set does not only have the high solubility solid 210, but also has the low solubility solid 211. The removal liquid not only dissolves the high solubility solid 210, but also dissolves the low solubility solid 211 around the high solubility solid 210, thus promoting the formation of the through holes 202.

[0232] When viewed from above, the through holes 202 are, for example, several nanometers in diameter. The through holes 202 do not need to be clearly formed to an observable degree. That is, it is only necessary to form a removal liquid path in the protective film 200 for the removal liquid to move from the upper surface of the protective film 200 to one surface W1 of the substrate W, and as long as the entire removal liquid path penetrates the protective film 200.

[0233] Here, when a moderate solvent remains in the protective film 200, the removal liquid dissolves a part of the protective film 200 while dissolving into the solvent remaining in the protective film 200. Specifically, the removal liquid dissolves the high solubility solid 210 in the protective film 200 while dissolving into the solvent remaining in the protective film 200 to form through holes 202 (gaps, paths). Therefore, the removal liquid easily enters the protective film 200 (dissolution and entry step). The removal liquid reaches the interface between the substrate W and the low solubility solid 211 through the through holes 202.

[0234] The removal liquid reaching one surface W1 of the substrate W acts on the interface between the protective film 200 and the substrate W, peels off the protective film 200, and removes the peeled-off protective film 200 from one surface W1 of the substrate W (peeling and removal step).

[0235] Specifically, the solubility of the low solubility solid 211 in the removal liquid is low, and most of the low solubility solid 211 remains in a solid state unchanged. Therefore, the removal liquid reaching near one surface W1 of the substrate W via the through holes 202 dissolves a small amount of the portion of the low solubility solid 211 near one surface W1 of the substrate W. Thus, as Figure 8B shown in the enlarged view, the removal liquid slowly dissolves the low solubility solid 211 near one surface W1 of the substrate W and enters the gap G between the protective film 200 and one surface W1 of the substrate W (removal liquid entry step).

[0236] Then, for example, starting from the periphery of the through holes 202, cracks are formed in the protective film 200. Therefore, the high solubility solid 210 is also called a crack generating component. The protective film 200 splits due to the formation of cracks and becomes film pieces 204. As Figure 8C shown, the film pieces 204 of the protective film 200 are peeled off from the substrate W while holding the fine particles 203 (protective film splitting step, protective film removal step).

[0237] Then, the removal liquid is continuously supplied, and thereby the protective film 200 that will become the diaphragm 204 is washed away by the removal liquid while holding the fine particles 203. In other words, the diaphragm 204 holding the fine particles 203 is pushed out of the substrate W and excluded from one surface W1 of the substrate W (protective film exclusion step, object to be removed exclusion step). Thereby, one surface W1 of the substrate W can be cleaned well.

[0238] As described above, by supplying the removal liquid to one surface W1 of the substrate W, the highly soluble solid 210 is dissolved, and the protective film 200 is peeled off from one surface W1 of the substrate W.

[0239] Thus, in the case of using a protective film forming liquid containing a highly soluble component and a low-soluble component, the removal liquid can quickly act on the interface between the protective film 200 and the substrate W, and most of the protective film 200 can be maintained in a solid state. Since the low-soluble component can be removed from one surface W1 of the substrate W while maintaining a solid state, the removal liquid can act on the interface between the low-soluble solid 211 and the substrate W while holding the fine particles 203 with the low-soluble solid 211.

[0240] As a result, the protective film 200 can be quickly peeled off from the substrate W, and the fine particles 203 and the protective film 200 can be efficiently removed from the substrate W together.

[0241] According to the first embodiment, the peripheral processing can be performed on the other surface W2 in a state where one surface W1 on which the protective film 200 is formed is adsorbed by the second rotating base 61. Therefore, contamination of one surface W1 of the substrate W by the second rotating base 61 can be suppressed.

[0242] By spraying the removal liquid from the ejection port 9a of the first moving nozzle 9A toward one surface W1 of the substrate W after performing the peripheral processing, the protective film 200 can be removed from one surface W1 of the substrate W. Therefore, it is not necessary to use a variety of liquids to remove the protective film 200, nor is it necessary to immerse the substrate in a cleaning tank. That is, by the simple step of ejecting the removal liquid from the ejection port 9a, the protective film 200 can be removed from one surface W1 of the substrate W.

[0243] As a result, the one surface W1 of the substrate W can be well protected by the protective film 200, and after the peripheral processing is performed on the other surface W2 in this state, the protective film 200 can be well removed.

[0244] According to the first embodiment, after supplying the protective film forming liquid to one surface W1 of the substrate W from above (one side in the vertical direction), the main transfer robot CR can transfer the substrate W to the flipping unit 5. The flipping unit 5 can flip the substrate W so that the one surface W1 of the substrate W faces downward (the other side in the vertical direction). After the substrate W is flipped, the main transfer robot CR transfers the substrate W to the second rotating base 61, and the second rotating base 61 adsorbs to the substrate W from below. Thereby, the second rotating base 61 can be adsorbed to the one surface W1 of the substrate W. Therefore, even if the operations of supplying the protective film forming liquid to the one surface W1 of the substrate W and adsorbing it by the second rotating base 61 are performed from opposite sides in the vertical direction of the substrate W, the posture of the substrate W can be appropriately adjusted.

[0245] According to the first embodiment, the protective film forming liquid supply unit 13A has a spout 9a (protective film forming liquid spout) that sprays the protective film forming liquid toward the substrate W held by the holding unit 20 from above. Therefore, the protective film forming liquid can be sprayed from the spout 9a and attached to the one surface W1 of the substrate W from above. Different from the first embodiment, in the configuration where the protective film forming liquid is supplied to the substrate W from below, before the protective film forming liquid spreads on the one surface W1, the protective film forming liquid may fall from the substrate W. On the other hand, in the first embodiment, the protective film forming liquid attached to the one surface W1 does not detach from the one surface W1 due to its own weight but spreads on the one surface W1. Therefore, according to the first embodiment, it is easy to uniformly supply the protective film forming liquid to various parts of the one surface W1.

[0246] According to the first embodiment, the adsorption surface 61a of the second rotating base 61 has an adsorption surface 61a that adsorbs to the substrate W from below. Therefore, the substrate W can be adsorbed to the adsorption surface 61a in a state where the substrate W is placed on the adsorption surface 61a. On the other hand, different from the first embodiment, in the configuration where the adsorption surface 61a abuts against the substrate W from above to adsorb the substrate W, it is necessary to support the substrate W from below while adsorbing the substrate W from above by the second rotating base 61. Therefore, according to the first embodiment, compared with the configuration where the second rotating base 61 adsorbs the substrate W from above, the adsorption operation becomes easier.

[0247] As a result, the one surface W1 of the substrate W can be well protected by the protective film 200, and after performing the peripheral processing in this state, the protective film 200 can be well removed from the substrate W.

[0248] According to the first embodiment, the operation of supplying the removal liquid to one surface W1 of the substrate W and the operation of adsorbing the substrate W by the second rotating base 61 are respectively performed from opposite sides in the vertical direction of the substrate W. After the peripheral edge processing step, by flipping the substrate W so that the one surface W1 faces upward (one side in the vertical direction), the removal liquid can be supplied to the one surface W1 of the substrate W in a state where the posture of the substrate W is appropriately adjusted.

[0249] According to the first embodiment, the removal liquid supply unit 13B is configured to supply the removal liquid to the substrate W held by the holding unit 20. That is, the operation of supplying the removal liquid by the removal liquid supply unit 13B and the operation of supplying the protective film forming liquid by the protective film forming liquid supply unit 13A are performed in a state where the substrate W is held by the common holding unit 20. Therefore, compared with a configuration in which a plurality of cleaning tanks for separately accommodating a plurality of liquids for immersing the substrate are provided, which is different from the first embodiment, the protective film 200 can be removed from the substrate W using the substrate processing system 1 having a simple configuration.

[0250] According to the first embodiment, the holding unit 20 includes: gripping members (a plurality of suction cup pins 20A) that grip the peripheral edge portion of the substrate W and hold the substrate W at the holding position; and a first rotating base 20B that supports the plurality of suction cup pins 20A and is disposed at an interval from the holding position. Therefore, the protective film forming liquid can be supplied to the one surface W1 of the substrate W without the other surface W2 of the substrate W coming into contact with the first rotating base 20B. Thus, the phenomenon of contaminating the other surface W2 when the protective film forming liquid is supplied can be suppressed.

[0251] In the first embodiment, the protective film forming unit 29 includes a first rotating motor 23 that rotates the substrate W held by the holding unit 20 by rotating the first rotating base 20B. Therefore, after the protective film forming liquid is supplied to the one surface W1 of the substrate W, the protective film 200 can be directly formed while the substrate W is held by the holding unit 20 without moving the substrate W from the holding unit 20 to another unit. Therefore, the phenomenon of uneven thickness of the protective film forming liquid at each position on the one surface W1 of the substrate W caused by impacts acting on the substrate W when the substrate is moved can be suppressed. Thus, the one surface of the substrate W can be well protected by the protective film 200.

[0252] The following modification examples can be applied to the substrate processing system 1 of the first embodiment.

[0253] For example, while rotating the substrate W having the protective film forming liquid on one surface W1, the substrate W may be heated, or after stopping the rotation of the substrate W, the substrate W may be heated, thereby promoting the formation of the protective film 200 (protective film formation promotion step). The heating of the substrate W can be performed, for example, using a heating plate (not shown) provided in the coating and stripping processing apparatus 4A. The heating of the substrate W can also be performed, for example, in another apparatus (drying processing apparatus) provided with a heating plate.

[0254] In addition, the heating of the substrate W can also be performed by supplying a heat medium such as warm water from the lower nozzle 11 to the lower surface of the substrate W.

[0255] Next, the configuration of the substrate processing apparatus 2 according to a modification of the first embodiment will be described. The substrate processing apparatus 2 according to the modification of the first embodiment includes a brushing processing apparatus 4C in place of the peripheral processing apparatus 4B (see FIG. 3). Brushing means scrubbing by bringing a cleaning member such as a brush or a sponge into contact with the main surface of the substrate. Figure 9 It is a schematic cross-sectional view for explaining a configuration example of the brushing processing apparatus 4C.

[0256] Similar to the peripheral processing apparatus 4B, the brushing processing apparatus 4C includes a second rotary chuck 6B, a second processing cup 7B, a second chamber 8B, and a center alignment unit 76.

[0257] The brushing processing apparatus 4C includes a cleaning liquid supply unit 60 that supplies a cleaning liquid such as DIW to the upper surface of the substrate W in place of the peripheral nozzle head 14, and a brushing processing unit 18 that presses a cleaning brush 110 against the upper surface of the substrate W to clean the upper surface of the substrate W.

[0258] The cleaning liquid supply unit 60 includes a cleaning liquid nozzle 17 that sprays the cleaning liquid downward, and a cleaning liquid pipe 49 that guides the cleaning liquid to the cleaning liquid nozzle 17. A cleaning liquid valve 59 that opens or closes the flow path in the cleaning liquid pipe 49 is inserted into the cleaning liquid pipe 49. By switching the cleaning liquid valve 59, the operation of spraying the cleaning liquid from the cleaning liquid nozzle 17 and the operation of stopping the spraying are switched.

[0259] The cleaning liquid sprayed from the cleaning liquid nozzle 17 is not limited to DIW. As the cleaning liquid sprayed from the cleaning liquid nozzle 17, it can be selected from those exemplified as the rinsing liquid used in the coating and stripping processing apparatus 4A.

[0260] The brushing processing unit 18 includes: a cleaning brush 110 (cleaning component) that contacts the upper surface of the substrate W and brushes the upper surface of the substrate W; a swing arm 111 that holds the cleaning brush 110 at the front end; and an arm driving mechanism 112 that swings the swing arm 111. The arm driving mechanism 112 is configured to be able to swing the swing arm 111 along a horizontal plane or move the swing arm 111 up and down. With this configuration, when the substrate W is held by the second rotary chuck 6B and rotates, by pressing the cleaning brush 110 against the upper surface of the substrate W and moving the pressing position along the radial direction of the substrate W, the entire upper surface of the substrate W can be brushed.

[0261] The arm driving mechanism 112 includes, for example: a lifting actuator (not shown) that moves the swing arm 111 up and down; and a swinging actuator (not shown) that swings the swing arm 111. The lifting actuator can be an electric motor or a cylinder. The swinging actuator can be an electric motor or a cylinder.

[0262] Next, the substrate processing performed by the substrate processing system 1 of this modification will be described.

[0263] Figure 10 It is a flowchart showing an example of the substrate processing performed by the substrate processing system 1 of the modification. In the substrate processing of the modification, a brushing processing step (step S12) is executed to replace the peripheral processing step (step S5).

[0264] Figure 11 It is a schematic diagram showing the state of the brushing processing step (step S12) of the substrate processing of the modification.

[0265] Before the start of the brushing processing step, the second rotary chuck 6B horizontally holds the substrate W whose other surface W2 has become the upper surface after being flipped (second substrate holding step).

[0266] With the substrate W placed on the adsorption surface 61a, the suction valve 68 is opened. Thereby, one surface W1 of the substrate W is adsorbed to the adsorption surface 61a of the second rotary base 61 from below (the other side in the vertical direction). Strictly speaking, the protective film 200 formed on one surface W1 of the substrate W is adsorbed to the adsorption surface 61a. With the substrate W adsorbed to the second rotary base 61, the second rotary motor 63 rotates the second rotary base 61. Thereby, the horizontally held substrate W rotates (second substrate rotation step).

[0267] In addition, before the start of the brushing processing step, the substrate W placed on the second rotary base 61 can be centered by the center alignment unit 76 such that the central portion of the substrate W is substantially aligned with the rotation axis A2.

[0268] In the brushing process step, a brushing process (a specified process) is performed, that is, while supplying a cleaning liquid to the other surface W2 of the substrate W, the cleaning brush 110 is pressed against the other surface W2 of the substrate W to clean the other surface W2 of the substrate W.

[0269] Specifically, with the substrate W rotating, the cleaning liquid valve 59 is opened. Thereby, the cleaning liquid is supplied from the cleaning liquid nozzle 17 to the central region of the other surface W2 of the substrate W toward the other surface W2 of the substrate W. The cleaning liquid supplied to the other surface W2 diffuses to various parts of the other surface W2 of the substrate W by centrifugal force. While supplying the cleaning liquid to the other surface W2 of the substrate W, the arm driving mechanism 112 is controlled by the control device 3, so that the brushing processing unit 18 performs a brushing process on the other surface W2 of the substrate W. The brushing processing unit 18 is an example of a processing unit.

[0270] <Second Embodiment>

[0271] Figure 12 It is a top view showing the configuration of the substrate processing system 1P for explaining the second embodiment of the present invention. Figure 13 It is a schematic side view of a plurality of liquid processing devices 4 of the substrate processing device 2P provided in the substrate processing system 1P.

[0272] In Figure 12 and Figure 13 , and in the following Figures 14 - 17C , the same reference numerals as those in FIG. 1 etc. are assigned to the configurations equivalent to those shown in FIGS. 1 to Figure 11 , and the related descriptions are omitted.

[0273] Refer to Figure 12 , the substrate processing system 1P includes a substrate processing device 2P, an exposure device 120 adjacent to the substrate processing device 2P, and a control device 3 (refer to Figure 5 ).

[0274] The substrate processing device 2P includes: a plurality of liquid processing devices 4; a plurality of temperature adjustment devices 150 that adjust the temperature of the substrate W by heating and cooling; a single container holding unit LP1 that holds a plurality of containers C; and a transfer robot IR1.

[0275] The substrate processing device 2P further includes: a first main transfer robot CR^1 that exchanges the substrate W with the transfer robot IR1 and transfers the substrate W into and out of the plurality of liquid processing devices 4 and the plurality of temperature adjustment devices 150; and a second main transfer robot CR^2 that exchanges the substrate W with the first main transfer robot CR^1 and transfers the substrate W into and out of the plurality of liquid processing devices 4 and the plurality of temperature adjustment devices 150.

[0276] The substrate processing apparatus 2P further includes: a first turning unit 5A that receives the substrate W from the transfer robot IR1 and the first main transfer robot CR1, turns the substrate W so that one of the front surface W1 and the back surface W2 of the substrate W faces upward; and a second turning unit 5B that receives the substrate W from the first main transfer robot CR1 and the second main transfer robot CR2, turns the substrate W so that one of the front surface W1 and the back surface W2 of the substrate W faces upward.

[0277] The transfer robot IR, the first main transfer robot CR1, and the second main transfer robot CR2 are arranged on the transfer path TR extending from the plurality of container holding units LP1 to the plurality of liquid processing apparatuses 4.

[0278] The plurality of liquid processing apparatuses 4 are arranged on one side of the transfer path TR. The plurality of temperature adjustment apparatuses 150 are arranged on the side opposite to the plurality of liquid processing apparatuses 4 with the transfer path TR therebetween.

[0279] The plurality of liquid processing apparatuses 4 form four processing towers TW1 to TW4 respectively arranged at four horizontally separated positions. Each of the processing towers TW1 to TW4 includes a plurality of liquid processing apparatuses 4 stacked in the vertical direction (also refer to Figure 13 ).

[0280] The plurality of temperature adjustment apparatuses 150 form five temperature adjustment towers TW11 to TW15 respectively arranged at five horizontally separated positions. Each of the temperature adjustment towers TW11 to TW15 includes a plurality of temperature adjustment apparatuses 150 stacked in the vertical direction. Each temperature adjustment apparatus 150 includes a flat plate 152 for placing the substrate W and cooling or heating the substrate W.

[0281] The first turning unit 5A is arranged between the transfer robot IR1 and the first main transfer robot CR1. The second turning unit 5B is arranged between the first main transfer robot CR1 and the second main transfer robot CR2.

[0282] The first main transfer robot CR1 is configured to be able to approach the processing towers TW1, TW2 and the temperature adjustment towers TW11 to TW13. The second main transfer robot CR2 is configured to be able to approach the processing towers TW3, TW4 and the temperature adjustment towers TW14, TW15.

[0283] The substrate processing apparatus 2P further includes: a first external transfer robot OR1 that exchanges the substrate W with the second main transfer robot CR2; and a third flipping unit 5C that receives the substrate W from the second main transfer robot CR2 and the first external transfer robot OR1, flips the substrate W, and makes one of the one surface W1 and the other surface W2 of the substrate W face upward. The substrate processing apparatus 2P further includes: a second external transfer robot OR2 that exchanges the substrate W with the first external transfer robot OR1 and transfers the substrate W toward the exposure apparatus 120; and a placement unit 151 for placing the substrate W to exchange the substrate W between the first external transfer robot OR1 and the second external transfer robot OR2.

[0284] The configuration of the transfer robot IR1 in the second embodiment is different from that of the transfer robot IR in the first embodiment. The transfer robot IR1 in the second embodiment has a linearly moving hand H1. The transfer robot IR1 horizontally moves to a position facing either the respective containers C or the first flipping unit 5A in a top view, and rotates and raises or lowers the hand H1 as needed, thereby approaching the container C or the first flipping unit 5A corresponding to the horizontal position of the transfer robot IR1.

[0285] The first main transfer robot CR1 has a linearly moving hand H2. The first main transfer robot CR1 horizontally moves to a position facing either the first flipping unit 5A, the second flipping unit 5B, the plurality of liquid processing devices 4, or the plurality of temperature adjustment devices 150 in a top view, and rotates and raises or lowers the hand H2 as needed, thereby approaching the first flipping unit 5A, the second flipping unit 5B, the plurality of liquid processing devices 4, or the plurality of temperature adjustment devices 150 corresponding to the horizontal position of the first main transfer robot CR1.

[0286] The second main transfer robot CR2 has a linearly moving hand H3. The second main transfer robot CR2 horizontally moves to a position facing either the second flipping unit 5B, the third flipping unit 5C, the plurality of liquid processing devices 4, or the plurality of temperature adjustment devices 150 in a top view, and rotates and raises or lowers the hand H3 as needed, thereby approaching the second flipping unit 5B, the third flipping unit 5C, the plurality of liquid processing devices 4, or the plurality of temperature adjustment devices 150 corresponding to the horizontal position of the first main transfer robot CR1.

[0287] The configurations and operations of the first flipping unit 5A, the second flipping unit 5B, and the third flipping unit 5C are the same as those of the flipping unit 5 shown in Figure 4A ~FIG. 4D.

[0288] Refer to Figure 13, a plurality of liquid processing devices 4 include: a plurality of coating and stripping processing devices 4A; a plurality of coating processing devices 4D that coat an antireflection film or a resist film on the upper surface of a substrate W; and a developing processing device 4E that develops the upper surface of the substrate W. In the present embodiment, the processing towers TW1 and TW2 are composed of a plurality of coating and stripping processing devices 4A and a plurality of coating processing devices 4D, and the processing towers TW3 and TW4 are composed of a plurality of developing processing devices 4E.

[0289] The coating processing device 4D includes: an antireflection film coating processing device 4DA that coats an antireflection film on the upper surface of the substrate W; and a resist film coating processing device 4DB that coats a resist film on the upper surface of the substrate W.

[0290] The antireflection film coating processing device 4DA is arranged across the processing towers TW1 and TW2. Similarly, the resist film coating processing device 4DB is also arranged across the processing towers TW1 and TW2. The developing processing device 4E is arranged across the processing towers TW3 and TW4.

[0291] Refer to Figure 12 , each developing processing device 4E includes: two rotary holding parts 170 that rotatably hold the substrate W; and two cups 171 that respectively surround the two rotary holding parts 170. The two cups 171 are arranged side by side without being separated by a partition wall or the like. The developing processing device 4E further includes a supply part 172 that supplies a developing solution. The supply part 172 includes: two slit nozzles 172a that eject the developing solution; and a moving mechanism 172b that moves the slit nozzles 172a. Thus, each slit nozzle 172a can move above the corresponding rotary holding part 170.

[0292] Figure 14 is a schematic top view for explaining a configuration example of the coating processing device 4D provided in the substrate processing device 2P. Figure 15 is a schematic cross-sectional view for explaining a configuration example of the coating processing device 4D.

[0293] The coating processing device 4D includes two second rotary chucks 6B, two second processing cups 7B, and a liquid supply unit 160 that supplies a resist film forming liquid or an antireflection film forming liquid to the substrate W held by the two second rotary chucks 6B respectively, so as to supply the resist film forming liquid or the antireflection film forming liquid to the upper surface of the substrate W. In the coating processing device 4D, the two second processing cups 7B are arranged side by side without being separated by a partition wall or the like.

[0294] Each second processing cup 7B provided in the coating processing device 4D has a form in which a baffle is integrated with the cup body.

[0295] The liquid supply unit 160 includes: a plurality of nozzles 161; a gripping portion 162 for gripping any one of the plurality of nozzles 161; and a nozzle moving unit 163 for moving the gripping portion 162 that grips the nozzle 161, thereby moving the nozzle 161 gripped by the gripping portion 162 between a processing position above the substrate W and an initial position not facing the substrate W.

[0296] Each nozzle 161 is connected to a supply pipe 164 that guides the resist film forming liquid or antireflective film forming liquid toward the nozzle 161. The supply pipe 164 is configured to allow the nozzle 161 to move between a standby position and a processing position. The other end of each supply pipe 164 is connected to a supply source (not shown). Each supply pipe 164 is fitted with a valve (not shown) to open or close its flow path.

[0297] Different types of antireflection film forming liquid are supplied to each nozzle 161 of the antireflection film coating apparatus 4DA. The antireflection film forming liquid ejected from the nozzles 161 is supplied to the upper surface of the rotating substrate W, thereby forming an antireflection film on the upper surface of the substrate W. In other words, the antireflection film is coated on the upper surface of the substrate W. The liquid supply unit 160 and the second rotary motor 63 provided in the antireflection film coating apparatus 4DA constitute the antireflection film coating unit 167.

[0298] A supply source supplies different types of resist film forming liquid to each nozzle 161 of the resist film coating processing apparatus 4DB. The resist film forming liquid ejected from the nozzles 161 is supplied to the upper surface of the rotating substrate W, thereby forming a resist film on the upper surface of the substrate W. In other words, a resist film is coated on the upper surface of the substrate W. The liquid supply unit 160 and the second rotary motor 63 provided in the resist film coating processing apparatus 4DB constitute a resist film coating processing unit 168.

[0299] The nozzle moving unit 163 includes two first guide rails 165 and a second guide rail 166. The two first guide rails 165 are arranged parallel to each other, sandwiching two second processing cups 7B arranged laterally therebetween. The second guide rail 166 is slidably supported on the two first guide rails 165, thereby being mounted above the two second processing cups 7B. The gripping portion 162 is slidably supported on the second guide rails 166. The nozzle moving unit 163 further includes an actuator (not shown) such as an electric motor, which causes the second guide rails 166 to slide, thereby causing the gripping portion 162 to slide. Furthermore, the actuator is driven to move the nozzle 161 gripped by the gripping portion 162 to a position above the two second rotating bases 61 corresponding to the processing position.

[0300] The anti-reflection film forming liquid contains a solvent and a solute. The solute contained in the anti-reflection film forming liquid, for example, includes an anti-reflection film forming polymer containing an anthracene skeleton and having a hydrophilic group. The polymer containing an anthracene skeleton is a copolymer containing at least one monomer selected from the group consisting of acrylic acid, methacrylic acid, vinyl alcohol, vinyl pyrrolidone, acrylate, and methacrylate, and a monomer containing an anthracene skeleton. The solvent contained in the anti-reflection film forming liquid is, for example, an organic solvent or water. The solute contained in the anti-reflection film forming liquid may also be a fluororesin.

[0301] The organic solvent used as the solvent can be arbitrarily selected from the following materials according to the purpose: (a) hydrocarbons, such as n-hexane, n-octane, cyclohexane, etc.; (b) alcohols, such as methanol, ethanol, isopropyl alcohol, etc.; (c) ketones, such as acetone, methyl ethyl ketone, etc.; and (d) esters, such as methyl acetate, ethyl acetate, ethyl lactate, etc.; (e) ethers, such as diethyl ether, dibutyl ether, etc., (f) other polar solvents, such as dimethylformamide, dimethyl sulfoxide, methyl cellosolve, cellosolve, butyl cellosolve, cellosolve acetate, alkyl cellosolve acetate, butyl carbitol, carbitol acetate, etc.

[0302] As the resist composition constituting the resist film, a positive resist composition, a negative composition, etc. can be used. As the positive resist composition, for example, those composed of a quinone diazide-based photosensitizer and an alkali-soluble resin; chemically amplified resist compositions, etc. can be cited.

[0303] As the negative resist composition, for example, those containing a polymer compound having a photosensitive group such as polyvinyl cinnamate; those containing an aromatic azide compound, or those containing an azide compound composed of cyclized rubber and a bisazide compound; those containing a diazo resin; a photopolymerizable composition containing an addition-polymerizable unsaturated compound; chemically amplified negative resist compositions, etc. can be cited.

[0304] Here, as examples of the quinone diazide-based photosensitizer used in the positive resist composition composed of a quinone diazide-based photosensitizer and an alkali-soluble resin, 1,2-benzoquinone diazide-4-sulfonic acid, 1,2-naphthoquinone diazide-4-sulfonic acid, 1,2-naphthoquinone diazide-5-sulfonic acid, esters or amides of these sulfonic acids, etc. can be cited. In addition, as examples of the alkali-soluble resin, phenolic resin, polyvinyl phenol, polyvinyl alcohol, copolymers of acrylic acid or methacrylic acid, etc. can be cited. As a preferred phenolic resin, those manufactured from one or more of phenols such as phenol, o-cresol, m-cresol, p-cresol, xylenol, etc. and one or more of aldehydes such as formaldehyde, paraformaldehyde, etc. can be cited.

[0305] In addition, either a positive or negative chemically amplified resist composition can be used. A chemically amplified resist generates an acid upon irradiation with radiation, and utilizes the catalytic action of this acid to achieve a chemical change, thereby changing the solubility of the irradiated portion in the developer to form a pattern. Examples include those composed of an acid-generating compound that generates an acid upon irradiation with radiation and a resin containing an acid-sensitive group that decomposes in the presence of an acid to generate a base-soluble group such as a phenolic hydroxyl group or a carboxyl group; those composed of a base-soluble resin, a crosslinking agent, and an acid generator.

[0306] Next, an example of the substrate processing performed by the substrate processing system 1P of the second embodiment will be described.

[0307] Figure 16 It is a flowchart for explaining the process of the substrate processing system 1P specifically performing substrate processing. Figures 17A - 17C It is a schematic diagram for explaining the state of the substrate when an example of the substrate processing performed by the substrate processing system of the second embodiment is described.

[0308] The main difference between the substrate processing performed by the substrate processing system 1P and the substrate processing performed by the substrate processing system 1 is that the resist film coating step (step S20) and the anti-reflection film coating step (step S21) are executed to replace the peripheral processing step (step S5), and the exposure step (step S22) is executed after the third flipping step (step S11).

[0309] Next, mainly with reference to Figure 12 、 Figure 13 and Figure 16 the substrate processing performed by the substrate processing system 1P will be described. Appropriate reference will also be made to Figures 17A - 17C .

[0310] First, the transfer robot IR removes the unprocessed substrate W from the container C and transfers it into the flipping unit 5. The first flipping unit 5A flips the substrate W transferred into the first flipping unit 5A so that one surface W1 faces upward (step S1: pre-flipping step).

[0311] The first main transfer robot CR1 transfers the substrate W flipped by the first flipping unit 5A into the coating / stripping processing device 4A and delivers it to the first rotary chuck 6A. Specifically, the substrate W is placed on the plurality of chuck pins 20A in the open state. In this state, the opening / closing unit 28 makes the plurality of chuck pins 20A in the closed state, whereby the first rotary chuck 6A horizontally holds the substrate W with one surface W1 as the upper surface (first substrate holding step).

[0312] In the coating and peeling processing apparatus 4A, a protective film forming liquid supply step (step S1) and a protective film forming step (step S3) are performed on the substrate W held by the first rotary chuck 6A. After that, the first main transfer robot CR1 removes the substrate W from the coating and peeling processing apparatus 4A and transfers it into the first flipping unit 5A. The first flipping unit 5A flips the substrate W transferred into the first flipping unit 5A so that the other surface W2 faces upward (one side in the vertical direction) (step S4: first flipping step).

[0313] The first main transfer robot CR1 removes the substrate W flipped by the first flipping unit 5A from the first flipping unit 5A and transfers it into the resist coating processing apparatus 4DB. Thus, the substrate W is placed on the adsorption surface 61a of the second rotary base 61 with one surface W1 facing downward. After the main transfer robot CR places the substrate W on the adsorption surface 61a of the second rotary base 61, it retracts outside the resist coating processing apparatus 4DB.

[0314] With the substrate W placed on the adsorption surface 61a, the suction valve 68 is opened. Thus, one surface W1 of the substrate W is adsorbed to the adsorption surface 61a of the second rotary base 61. Thus, the second rotary chuck 6B horizontally holds the substrate W with the other surface W2 as the upper surface (second substrate holding step). With the substrate W placed on the adsorption surface 61a, the suction valve 68 is opened. Thus, one surface W1 of the substrate W is adsorbed from below (the other side in the vertical direction) to the adsorption surface 61a of the second rotary base 61. Strictly speaking, the protective film 200 formed on one surface W1 is adsorbed to the adsorption surface 61a. With the substrate W adsorbed to the second rotary base 61, the second rotary motor 63 rotates the second rotary base 61. Thus, the horizontally held substrate W rotates (second substrate rotation step).

[0315] Next, a resist coating process step (step S20) is started, that is, a resist film is coated on the other surface W2 of the substrate W. In the resist coating process step, as Figure 17A shown, a resist film forming liquid is supplied from the nozzle 161 located at the processing position toward the other surface W2 of the rotating substrate W. Thus, a resist film 180 is formed on the other surface W2 of the substrate W (refer to Figure 17B ). That is, a resist coating process (designated process) (processing step) is performed on the other surface W2 of the substrate W.

[0316] The first main transfer robot CR1 removes the substrate W with the anti-reflection film 180 coated on the other side W2 from the anti-reflection film coating processing device 4DB and transfers it into the anti-reflection film coating processing device 4DA. Thus, the substrate W is placed on the adsorption surface 61a of the second rotating base 61 with one side W1 facing downward. After the first main transfer robot CR1 places the substrate W on the adsorption surface 61a of the second rotating base 61, it retreats outside the anti-reflection film coating processing device 4DA.

[0317] With the substrate W placed on the adsorption surface 61a, the suction valve 68 is opened. Thus, one side W1 of the substrate W is adsorbed to the adsorption surface 61a of the second rotating base 61. Thus, the second rotating suction cup 6B horizontally holds the substrate W with the other side W2 as the upper surface (the second substrate holding step). With the central portion of the substrate W substantially aligned with the rotation axis A2, the suction valve 68 is opened. Thus, one side W1 of the substrate W is adsorbed to the adsorption surface 61a of the second rotating base 61 from below (the other side in the up-down direction) by the second rotating base 61. Strictly speaking, the protective film 200 formed on one side W1 is adsorbed to the adsorption surface 61a. With the substrate W adsorbed to the second rotating base 61, the second rotating motor 63 rotates the second rotating base 61. Thus, the horizontally held substrate W rotates (the second substrate rotation step).

[0318] Next, the anti-reflection film coating processing step (step S21) is started, that is, an anti-reflection film is coated on the other side W2 of the substrate W. In the anti-reflection film coating processing step, as Figure 17B shown, while rotating the substrate W by the second rotating motor 63, the anti-reflection film forming liquid is supplied from the nozzle 161 located at the processing position. Thus, as Figure 17C shown, an anti-reflection film 181 is coated on the other side W2 of the substrate W. That is, the anti-reflection film coating process (the specified process) (the processing step) is performed on the other side W2 of the substrate W. In this substrate processing, the anti-reflection film 181 is formed on the anti-reflection film 180.

[0319] The first main transfer robot CR1 removes the substrate W with the other side W2 having undergone the anti-reflection film coating process from the anti-reflection film coating processing device 4DA. The first main transfer robot CR1 transfers the substrate W removed from the anti-reflection film coating processing device 4DA into the first flipping unit 5A. The first flipping unit 5A flips the substrate W transferred into the first flipping unit 5A so that one side W1 faces upward (one side in the up-down direction) (step S6: the second flipping step).

[0320] The first main transfer robot CR1 transfers the substrate W flipped by the first flipping unit 5A into the coating and stripping processing device 4A and delivers it to the first rotating suction cup 6A.

[0321] The removal step (step S7) to the drying step (step S10) are performed using the coating and peeling processing apparatus 4A.

[0322] After that, the first main transfer robot CR1 takes out the substrate W from the coating and peeling processing apparatus 4A. The substrate W taken out from the coating and peeling processing apparatus 4A is delivered from the first main transfer robot CR1 to the second main transfer robot CR2 via the second flipping unit 5B. Then, the substrate W is carried into the third flipping unit 5C from the second main transfer robot CR2. The third flipping unit 5C flips the substrate W carried into the third flipping unit 5C so that the other surface W2 faces upward (step S11: third flipping step).

[0323] The first external transfer robot OR1, the placement unit 151, and the second external transfer robot OR2 take out the substrate W flipped by the first flipping unit 5A toward the exposure apparatus 120. In the exposure apparatus 120, a light beam is irradiated onto the other surface W2 of the substrate W via a reticle (not shown) having a specified mask pattern. Thereby, the other surface W2 of the substrate W is exposed (step S22: exposure step).

[0324] The exposed substrate W is accommodated in the container C with the other surface W2 facing upward via the second external transfer robot OR2, the first external transfer robot OR1, the second main transfer robot CR2, the first main transfer robot CR1, and the transfer robot IR.

[0325] Before being accommodated in the container C, the exposed substrate W may be developed by the developing processing apparatus 4E.

[0326] In the second embodiment, the same effects as those of the first embodiment can also be achieved. Since the protective film is removed before exposure, contamination of the stage for placing the substrate W in the exposure apparatus 120 and focus shift (defocus) of the light beam can be suppressed.

[0327] In the substrate processing of the second embodiment, the antireflection film coating step may also be performed prior to the resist film coating step and may be omitted.

[0328] In the substrate processing apparatus 2P of the second embodiment, at least one flipping unit may be provided. For example, only the first flipping unit 5A may be provided, and for the other flipping units (the second flipping unit 5B and the third flipping unit 5C), placement units may be provided instead.

[0329] <Example of the protective film forming liquid>

[0330] Next, an example of each component in the protective film forming liquid used in the above embodiment will be described.

[0331] Hereinafter, "C x～y”, “C x～ C y ” and “C x ” and the like refer to the number of carbons in a molecule or substituent. For example, C 1～6 An alkyl group refers to an alkyl chain having 1 or more and 6 or less carbons (methyl, ethyl, propyl, butyl, pentyl, hexyl, etc.).

[0332] When the polymer has a plurality of repeating units, these repeating units are copolymerized. Unless otherwise specified, their copolymerization can be any one of alternating copolymerization, random copolymerization, block copolymerization, graft copolymerization, or a case where the above copolymerization forms are mixed. When representing a polymer or resin by a structural formula, n, m, etc. marked together with parentheses represent the number of repetitions.

[0333] <Low solubility component>

[0334] (A) The low solubility component contains at least one of novolak, polyhydroxystyrene, polystyrene, polyacrylic acid derivatives, polymaleic acid derivatives, polycarbonate, polyvinyl alcohol derivatives, polymethacrylic acid derivatives, and copolymers of combinations thereof. Preferably, (A) the low solubility component may also contain at least one of novolak, polyhydroxystyrene, polyacrylic acid derivatives, polycarbonate, polymethacrylic acid derivatives, and copolymers of combinations thereof. More preferably, (A) the low solubility component may also contain at least one of novolak, polyhydroxystyrene, polycarbonate, and copolymers of combinations thereof. The novolak may be phenolic novolak.

[0335] The protective film forming liquid may also contain one or a combination of two or more of the above examples as (A) the low solubility component. For example, (A) the low solubility component may also contain both novolak and polyhydroxystyrene.

[0336] In a preferred embodiment, (A) the low solubility component forms a film by drying, and most of the film is not dissolved by the removing liquid, but peels off while maintaining the object to be removed. In addition, an embodiment in which a very small part of (A) the low solubility component is dissolved by the removing liquid is also allowed.

[0337] Preferably, (A) the low solubility component does not contain fluorine and / or silicon, and more preferably does not contain both.

[0338] The copolymerization is preferably random copolymerization or block copolymerization.

[0339] As specific examples of (A) the low solubility component, each of the compounds represented by the following Chemical Formula 1 to Chemical Formula 7 can be exemplified, but the scope of the claims is not limited thereto.

[0340] [Chemical Formula 1]

[0341] Chemical Formula 1

[0342]

[0343] [Chemical 2]

[0344] Chemical 2

[0345]

[0346] [Chemical 3]

[0347] Chemical 3

[0348]

[0349] (The asterisk * indicates a bond that forms a unit with an adjacent atom.)

[0350] [Chemical 4]

[0351] Chemical 4

[0352]

[0353] (R represents a substituent such as a C1-4 alkyl group. The asterisk * indicates a bond that forms a unit with an adjacent atom.)

[0354] [Chemical 5]

[0355] Chemical 5

[0356]

[0357] [Chemical 6]

[0358] Chemical 6

[0359]

[0360] [Chemical 7]

[0361] Chemical 7

[0362]

[0363] (Me represents a methyl group. The asterisk * indicates a bond that forms a unit with an adjacent atom.)

[0364] (A) The weight average molecular weight (Mw) of the low solubility component is preferably 150 to 500,000, more preferably 300 to 300,000, still more preferably 500 to 100,000, and even more preferably 1,000 to 50,000.

[0365] (A) The low solubility component can be obtained by synthesis. In addition, it can also be purchased. If you want to purchase, the following examples can be cited as suppliers. (A) The polymer can also be synthesized by the supplier.

[0366] Phenol formaldehyde: Showa Denko K.K., Asahi Organic Chemicals Co., Ltd., Gun Ei Chemical Industry Co., Ltd., Sumitomo Bakelite Co., Ltd.

[0367] Polyhydroxystyrene: Nippon Soda Co., Ltd., Maruzen Petrochemical Co., Ltd., Toho Chemical Industry Co., Ltd.

[0368] Polyacrylic acid derivative: Nippon Shokubai Co., Ltd.

[0369] Polycarbonate: Sigma-Aldrich

[0370] Polymethacrylic acid derivative: Sigma-Aldrich

[0371] With respect to the total mass of the protective film forming liquid, the content of (A) low-solubility component is 0.1 to 50% by mass, preferably 0.5 to 30% by mass, more preferably 1 to 20% by mass, and still more preferably 1 to 10% by mass. That is, assuming the total mass of the protective film forming liquid is 100% by mass, based on this, the content of (A) low-solubility component is 0.1 to 50% by mass. That is, “with respect to...” can also be expressed as “based on...”. Unless otherwise specified, the same applies hereinafter.

[0372] <High-solubility component>

[0373] (B) High-solubility component is (B') cracking promoting component. (B') Cracking promoting component contains hydrocarbon, and also contains hydroxyl group (-OH) and / or carbonyl group (-C(=O)-). When (B') cracking promoting component is a polymer, each unit of one kind of constitutional unit contains hydrocarbon, and also contains hydroxyl group and / or carbonyl group. Examples of the carbonyl group include carboxylic acid (-COOH), aldehyde, ketone, ester, amide, and ketene, and carboxylic acid is preferred.

[0374] When the protective film forming liquid is dried to form a protective film on the substrate and the protective film is peeled off using a removing liquid, it can be expected that (B) high-solubility component will create a part that becomes the starting point of the peeling of the protective film; this is not intended to limit the scope of the claims and is not bound by theory. Therefore, (B) high-solubility component is preferably a component with higher solubility in the removing liquid than (A) low-solubility component. Regarding the aspect where (B') cracking promoting component contains a ketone as the carbonyl group, cyclic hydrocarbons can be exemplified. As a specific example, 1,2-cyclohexanedione or 1,3-cyclohexanedione can be exemplified.

[0375] As a more specific aspect, (B) high-solubility component is represented by at least any one of the following (B-1), (B-2), and (B-3).

[0376] (B-1) is a compound containing 1 to 6 of the following chemical formula 8 as constituent units (preferably 1 to 4), and each constituent unit is bonded by a linking group (linker L1). Here, the linker L1 can be a single bond or a C1-6 alkylene. The C1-6 alkylene connects the constituent units as a linker, and it is not limited to a divalent group. Preferably, it is 2 to 4 valent. The C 1～6 alkylene can be straight-chain or branched-chain.

[0377] [Chemical formula 8]

[0378] Chemical formula 8

[0379]

[0380] Cy1 is a C5- 30 hydrocarbon ring, preferably phenyl, cyclohexane or naphthyl, more preferably phenyl. As a preferred embodiment, the linker L1 connects a plurality of Cy1.

[0381] R1 are each independently a C 1～5 alkyl group, preferably methyl, ethyl, propyl or butyl. The C 1～5 alkyl group can be straight-chain or branched-chain.

[0382] n b1 is 1, 2 or 3, preferably 1 or 2, more preferably 1. n b1 ' is 0, 1, 2, 3 or 4, preferably 0, 1 or 2.

[0383] The following chemical formula 9 is a chemical formula representing the constituent unit described in chemical formula 8 using the linker L9. The linker L9 is preferably a single bond, methylene, ethylene or propylene.

[0384] [Chemical formula 9]

[0385] Chemical formula 9

[0386]

[0387] As examples of (B-1), 2,2-bis(4-hydroxyphenyl)propane, 2,2'-methylenebis(4-methylphenol), 2,6-bis[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol, 1,3-cyclohexanediol, 4,4'-dihydroxydiphenyl, 2,6-naphthalenediol, 2,5-di-tert-butylhydroquinone, 1,1,2,2-tetrakis(4-hydroxyphenyl)ethane can be cited, but the scope of the claims is not limited thereto. They can also be obtained by polymerization or condensation.

[0388] As an example, 2,6-bis[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol represented by the following chemical formula 10 is used for illustration. This compound has three structural units of the chemical formula 8 in (B-1), and the structural units are linked by a linker L1 (methylene group). b1 =n b1 '=1, R1 is methyl.

[0389] [Chemistry 10]

[0390] Chemical 10

[0391]

[0392] (B-2) is represented by the following Chemical Formula 11.

[0393] [Chemistry 11]

[0394] Chemical 11

[0395]

[0396] R 21 , R 22 , R 23 and R 24 are independently hydrogen or C 1～5 The alkyl group is preferably hydrogen, methyl, ethyl, t-butyl or isopropyl, more preferably hydrogen, methyl or ethyl, further preferably methyl or ethyl.

[0397] Linker L 21 and linker L 22 Each is independently C 1～20 Alkylene, C 1～20 Cycloalkane, C 2～4 Alkenyl, C 2～4 Alkyne, or C 6～20 These groups can also be C 1～5 Here, the so-called alkenyl group means a divalent hydrocarbon group having one or more double bonds, and the so-called alkynyl group means a divalent hydrocarbon group having one or more triple bonds. 21 and linker L 22 Preferably, C2-4 alkylene, acetylene (C2 alkynylene) or phenylene, more preferably C 2～4 alkylene or acetylene, and preferably acetylene.

[0398] n b2 is 0, 1 or 2, preferably 0 or 1, more preferably 0.

[0399] Examples of (B-2) include 3,6-dimethyl-4-octyne-3,6-diol and 2,5-dimethyl-3-hexyne-2,5-diol. As another embodiment, 3-hexyne-2,5-diol, 1,4-butynediol, 2,4-hexadiyne-1,6-diol, 1,4-butanediol, cis-1,4-dihydroxy-2-butene, and 1,4-benzenedimethanol can also be cited as examples of (B-2). However, the scope of the claims is not limited thereto.

[0400] (B-3) is a polymer containing a structural unit represented by the following Chemical Formula 12 and having a weight average molecular weight (Mw) of 500 to 10,000. Mw is preferably 600 to 5,000, more preferably 700 to 3,000.

[0401] [Chemical Formula 12]

[0402] Chemical Formula 12

[0403]

[0404] Here, R 25 is -H, -CH3, or -COOH, preferably -H or -COOH. One (B-3) polymer may contain two or more structural units represented by Chemical Formula 12.

[0405] Examples of the (B-3) polymer include polymers of acrylic acid, maleic acid, or a combination thereof. Polyacrylic acid and maleic acid-acrylic acid copolymer are better examples. However, the scope of the claims is not limited thereto.

[0406] In the case of copolymerization, random copolymerization or block copolymerization is preferred, and random copolymerization is more preferred.

[0407] As an example, a maleic acid-acrylic acid copolymer represented by the following Chemical Formula 13 will be described. This copolymer is included in (B-3), has two structural units represented by Chemical Formula 12, and in one structural unit, R 25 is -H, and in the other structural unit, R 25 is -COOH.

[0408] [Chemical Formula 13]

[0409] Chemical Formula 13

[0410]

[0411] Of course, the protective film forming liquid may also contain one or a combination of two or more of the above examples as the (B) highly soluble component. For example, the (B) highly soluble component may also contain both 2,2-bis(4-hydroxyphenyl)propane and 3,6-dimethyl-4-octyne-3,6-diol.

[0412] (B) The highly soluble component may also have a molecular weight of 80 to 10,000. The highly soluble component preferably has a molecular weight of 90 to 5,000, more preferably 100 to 3,000. When the (B) highly soluble component is a resin, polymer or copolymer, the molecular weight is represented by the weight-average molecular weight (Mw).

[0413] (B) The highly soluble component can be obtained by synthesis or by purchase. As suppliers, examples include Sigma-Aldrich, Tokyo Chemical Industry, and Nippon Shokubai.

[0414] In the protective film forming solution, the mass of the (B) highly soluble component relative to the mass of the (A) low soluble component is preferably 1 to 100% by mass, more preferably 1 to 50% by mass. In the protective film forming solution, the mass of the (B) highly soluble component relative to the mass of the (A) low soluble component is further preferably 1 to 30% by mass.

[0415] <Solvent>

[0416] (C) The solvent preferably contains an organic solvent. (C) The solvent may also be volatile. By being volatile, it means that the volatility is higher than that of water. For example, the boiling point of the (C) solvent at 1 atmosphere is preferably 50 to 250 °C. The boiling point of the solvent at 1 atmosphere is more preferably 50 to 200 °C, further preferably 60 to 170 °C. The boiling point of the solvent at 1 atmosphere is further more preferably 70 to 150 °C. It is also allowed for the (C) solvent to contain a small amount of pure water. The pure water contained in the (C) solvent is preferably 30% by mass or less relative to the whole (C) solvent. The pure water contained in the solvent is more preferably 20% by mass or less, further preferably 10% by mass or less. The pure water contained in the solvent is further more preferably 5% by mass or less. It is also a preferred embodiment that the solvent does not contain pure water (0% by mass). The so-called pure water is preferably DIW.

[0417] Examples of the organic solvent include: alcohols such as isopropyl alcohol (IPA); ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether (PGEE); propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether acetate; lactate esters such as methyl lactate and ethyl lactate (EL); aromatic hydrocarbons such as toluene and xylene; ketones such as methyl ethyl ketone, 2-heptanone, and cyclohexanone; amides such as N,N-dimethylacetamide and N-methylpyrrolidone; lactones such as γ-butyrolactone; and so on. These organic solvents can be used alone or in combination of two or more.

[0418] As a preferred aspect, the organic solvents contained in the (C) solvent can be selected from IPA, PGME, PGEE, EL, PGMEA, and any combination thereof. When the combination of organic solvents is two kinds, the volume ratio is preferably 20:80 to 80:20, more preferably 30:70 to 70:30.

[0419] Relative to the total mass of the protective film forming liquid, the (C) solvent is 0.1 to 99.9% by mass. Relative to the total mass of the protective film forming liquid, the (C) solvent is preferably 50 to 99.9% by mass, more preferably 75 to 99.5% by mass. Relative to the total mass of the protective film forming liquid, the (C) solvent is further preferably 80 to 99% by mass, and even more preferably 85 to 99% by mass.

[0420] <Other Additives>

[0421] The protective film forming liquid of the present invention may also contain (D) other additives. As an aspect of the present invention, the (D) other additives include surfactants, acids, bases, antibacterial agents, fungicides, preservatives, or antifungal agents (preferably surfactants), and may also include any combination thereof.

[0422] As an aspect of the present invention, relative to the mass of the (A) low-solubility component in the protective film forming liquid, the (D) other additives (if there are multiple kinds, the sum thereof) are 0 to 100% by mass (preferably 0 to 10% by mass, more preferably 0 to 5% by mass, further preferably 0 to 3% by mass, and even more preferably 0 to 1% by mass). It is also one aspect of the present invention that the protective film forming liquid does not contain (D) other additives (0% by mass).

[0423] <Anticorrosive Component>

[0424] As the (E) anticorrosive component, in addition to BTA, uric acid, caffeine, purine, adenine, glyoxylic acid, glucose, fructose, mannose, etc. can also be exemplified.

[0425] <Other Embodiments>

[0426] The present invention is not limited to the embodiments described above, and can be further implemented in other ways.

[0427] For example, in the substrate treatment of the first embodiment, after performing peripheral treatment or brushing treatment on the other side W2 of the substrate W, an exposure treatment can also be performed on the other side W2 of the substrate W. To achieve such a substrate treatment, it is only necessary to provide a peripheral treatment device 4B or a brushing treatment device 4C in the substrate treatment device 2P of the second embodiment. Alternatively, after performing the substrate treatment shown in the first embodiment Figure 6 the substrate W is transferred into the exposure device 120 of the second embodiment, and the substrate W is subjected to an exposure treatment.

[0428] Alternatively, the exposure apparatus may not be provided in the substrate processing system 1P of the second embodiment, and the exposure process may be omitted.

[0429] Figure 1A In the example, the control device 3 is shown to be provided in the substrate processing device 2, but actually the control device 3 may be arranged independently of the substrate processing device 2.

[0430] While being held on the rotating base, the substrate W may not be held horizontally, and one surface W1 and the other surface W2 may not be along the horizontal plane.

[0431] Alternatively, differently from the above embodiment, a protective film forming liquid may be supplied to the lower surface of the substrate W from below the substrate W (one side in the vertical direction), and a specified process may be performed on the lower surface of the substrate W in a state where the adsorption surface 61a of the second rotating base 61 adsorbs to the upper surface of the substrate W from above (the other side in the vertical direction).

[0432] In the above embodiment, the protective film forming liquid, the removing liquid, the rinsing liquid, the residue removing liquid, etc. are ejected from the nozzle. However, these liquids do not necessarily have to be ejected from the nozzles provided in the above embodiment. For example, it may be configured to be ejected from the ejection port exposed on the lower surface of the blocking plate 25.

[0433] The protective film forming liquid is not limited to the above. For example, a resist film forming liquid or a reflective film forming liquid may be used as the protective film forming liquid. In this case, a developing liquid may be used as the removing liquid.

[0434] Alternatively, a liquid containing a water-soluble polymer that forms a water-soluble film by evaporating a solvent may be used as the protective film forming liquid.

[0435] The water-soluble polymer contains, for example: at least any one of cellulose-based polymers such as hydroxypropyl methylcellulose phthalate, hydroxypropyl methylcellulose acetate phthalate, hydroxypropyl methylcellulose acetate succinate, hydroxypropyl methylcellulose hexahydrophthalate, hydroxypropyl methylcellulose, hydroxypropyl cellulose, hydroxyethyl cellulose, cellulose acetate hexahydrophthalate, carboxymethyl cellulose, ethyl cellulose, methyl cellulose; acrylic-based polymers such as N,N-dimethylacrylamide, dimethylaminopropyl methacrylamide, N,N-dimethylaminopropyl acrylamide, N-methylacrylamide, diacetone acrylamide, dimethylaminoethyl methacrylate, diethylaminoethyl methacrylate, N,N-dimethylaminoethyl acrylate, acryloylmorpholine, acrylic acid; and vinyl-based polymers such as polyvinyl alcohol and polyvinylpyrrolidone. Only one of these water-soluble polymers may be used, or two or more of them may be used in combination.

[0436] In the case of using a water-soluble film as a protective film, by using DIW as a removal liquid, the protective film dissolves in the removal liquid and is removed from the substrate W (dissolution removal step). In this case, the supply of a rinse liquid can be omitted. Even when the protective film is composed of a low-solubility solid and a high-solubility solid as in the first and second embodiments, the supply of a rinse liquid can be omitted in the case of using DIW as a removal liquid.

[0437] In this specification, when using "~" or "-" to represent a numerical range, as long as there is no special limitation in the description, the numerical values at both ends of these two symbols are included, and the units are common. For example, 5 to 25 mol% means 5 mol% or more and 25 mol% or less.

[0438] The embodiments of the present invention have been described in detail above, but they are merely specific examples used to clarify the technical content of the present invention. The present invention should not be construed as being limited to these specific examples, and the scope of the present invention is only defined by the appended claims.

Claims

1. A substrate processing system, comprising: A protective film forming liquid supply unit that supplies a protective film forming liquid to one surface of the substrate; A protective film forming unit that cures or hardens the protective film forming liquid to form a protective film on one surface of the substrate; An adsorption unit that adsorbs one surface of the substrate; A processing unit that performs a specified process on the other surface of the substrate while one surface of the substrate is adsorbed to the adsorption unit; And A removal liquid supply unit having a removal liquid ejection port for ejecting a removal liquid for removing the protective film, and supplying the removal liquid from the removal liquid ejection port toward one surface of the substrate; and The protective film forming liquid supplied to one surface of the substrate by the protective film forming liquid supply unit contains a solvent and a solute, The solute contains a highly soluble component and a low soluble component that is less soluble in the removal liquid than the highly soluble component, The protective film formed by the protective film forming unit contains a highly soluble solid formed by the highly soluble component and a low soluble solid formed by the low soluble component, The removal liquid supplied from the removal liquid supply unit dissolves the highly soluble solid, whereby the protective film is peeled off from one surface of the substrate.

2. The substrate processing system according to claim 1, further comprising: A holding unit that horizontally holds the substrate; and A turning unit that turns the substrate so that either one of one surface and the other surface of the substrate faces upward; and The protective film forming liquid supply unit is configured to supply the protective film forming liquid to one surface of the substrate held by the holding unit from one side in the vertical direction, The adsorption unit is configured to adsorb one surface of the substrate from the other side in the vertical direction, The processing unit is configured to perform the specified process on the other surface of the substrate in a state where the substrate is adsorbed to the adsorption unit from the one side in the vertical direction.

3. The substrate processing system according to claim 2, wherein The protective film forming liquid supply unit has a protective film forming liquid ejection port that ejects the protective film forming liquid toward the substrate held by the holding unit from above, and The adsorption unit has an adsorption surface that adsorbs the substrate from below.

4. The substrate processing system according to claim 2 or 3, wherein The removal liquid supply unit is configured to supply the removal liquid to the substrate held by the holding unit.

5. The substrate processing system according to claim 2 or 3, wherein The holding unit has: a gripping member that grips the peripheral portion of the substrate to hold the substrate at a specified holding position; and a support base that supports the gripping member and is disposed at a distance from the holding position.

6. The substrate processing system according to claim 5, wherein The protective film forming unit includes a substrate rotating unit that rotates the substrate held by the holding unit by rotating the support base.

7. The substrate processing system according to any one of claims 1 to 3, wherein The processing unit includes a peripheral processing unit that supplies a processing liquid to the peripheral portion of the other surface of the substrate while one surface of the substrate is adsorbed to the adsorption unit, and performs peripheral processing.

8. The substrate processing system according to any one of claims 1 to 3, wherein The processing unit includes a scrubbing processing unit which, while one side of the substrate is adsorbed to the adsorption unit, presses a cleaning member against the other side of the substrate to perform a scrubbing process.

9. The substrate processing system according to any one of claims 1 to 3, wherein the processing unit includes a resist film coating processing unit which, while one side of the substrate is adsorbed to the adsorption unit, performs a coating process of coating a resist film on the other side of the substrate.

10. A substrate processing system, comprising: a protective film forming liquid supply unit that supplies a protective film forming liquid to a non-element surface of a substrate; a protective film forming unit that cures or hardens the protective film forming liquid to form a protective film on the non-element surface of the substrate; and an adsorption unit that adsorbs the non-element surface of the substrate; and the protective film is a film that can be removed by supplying a removal liquid, the protective film forming liquid supplied from the protective film forming liquid supply unit to the non-element surface of the substrate contains a solvent and a solute, the solute contains a highly soluble component and a low soluble component that is less soluble in the removal liquid than the highly soluble component, the protective film formed by the protective film forming unit contains a highly soluble solid formed by the highly soluble component and a low soluble solid formed by the low soluble component, the removal liquid dissolves the highly soluble solid, whereby the protective film is peeled off from the non-element surface of the substrate.

11. A substrate processing method, comprising: a protective film forming liquid supply step of supplying a protective film forming liquid to one side of a substrate; a protective film forming step of curing or hardening the protective film forming liquid on one side of the substrate to form a protective film on one side of the substrate; a processing step of performing a specified process on the other side of the substrate while adsorbing the side of the substrate on which the protective film is formed to an adsorption unit; and a removal step of, after the processing step, supplying a removal liquid from a removal liquid ejection port toward the side of the substrate to remove the protective film from the side of the substrate; and the protective film forming liquid supplied to one side of the substrate in the protective film forming liquid supply step contains a solvent and a solute, the solute has a highly soluble component and a low soluble component that is less soluble in the removal liquid than the highly soluble component, the protective film formed in the protective film forming step has a highly soluble solid formed by the highly soluble component and a low soluble solid formed by the low soluble component; in the removal step, the removal liquid dissolves the highly soluble solid and peels the protective film from one side of the substrate.

12. The substrate processing method according to claim 11, wherein the protective film forming liquid supply step includes the following step: ejecting a protective film forming liquid from a protective film forming liquid ejection port that faces one side of the substrate horizontally held by a holding unit from one side in the vertical direction toward one side of the substrate; after the protective film forming liquid supply step, it further includes a first turning step of turning the substrate so that one side of the substrate faces the other side in the vertical direction; After the first flipping step, the processing step includes the following steps: adsorbing the adsorption unit to one side of the substrate from the other side in the vertical direction, and performing the specified processing on the other side of the substrate in the state of being adsorbed to the adsorption unit.

13. The substrate processing method according to claim 12, wherein After the processing step, it further includes a second flipping step, that is, flipping the substrate so that one side of the substrate faces one side in the vertical direction; The removing step includes the following steps: supplying a removing liquid from a removing liquid ejection port facing one side of the substrate horizontally held by the holding unit from one side in the vertical direction toward one side of the substrate.

14. The substrate processing method according to claim 12 or 13, wherein The protective film forming liquid supply step includes a protective film forming liquid ejection step, that is, ejecting a protective film forming liquid from a protective film forming liquid ejection port provided at a position above the substrate held by the holding unit toward the substrate. The processing step includes the following steps: placing the substrate on the adsorption surface of the adsorption unit from above, and while adsorbing the substrate placed on the adsorption surface to the adsorption surface, performing the specified processing on the other side of the substrate.

15. The substrate processing method according to claim 12 or 13, wherein The holding unit has: a gripping member that grips the peripheral portion of the substrate and holds the substrate at a specified holding position; and a support base that supports the gripping member and is arranged at an interval from the holding position.

16. The substrate processing method according to claim 15, wherein The protective film forming step includes a substrate rotation step, that is, rotating the substrate held by the holding unit by rotating the support base.

17. The substrate processing method according to any one of claims 11 to 13, wherein The processing step includes a peripheral portion processing step, that is, supplying a cleaning liquid to the peripheral portion of the other side of the substrate to clean the peripheral portion of the other side of the substrate.

18. The substrate processing method according to any one of claims 11 to 13, wherein The processing step includes a brushing processing step, that is, pressing a cleaning member against the other side of the substrate to clean the other side of the substrate.

19. The substrate processing method according to any one of claims 11 to 13, wherein The processing step includes a coating processing step, that is, coating a resist film on the other side of the substrate.

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