Cutting system and cutting method

Abstract

The disclosed cutting system comprises: a protective layer forming device; a patterning device; a plasma processing device; a measuring device for acquiring at least one of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chip; and a control unit for causing at least one of the protective layer forming device, the patterning device, and the plasma processing device to operate based on a scheme determined for each device. The control unit determines whether to change the scheme based on at least one of the first processing data, the second processing data, and the third processing data, and if a change in the scheme is required, changes at least one of the schemes, causing at least one of the protective layer forming device, the patterning device, and the plasma processing device to operate based on the changed scheme.

Description

Technical Field

[0001] The present invention relates to a substrate cutting system and a cutting method using plasma. Background Art

[0002] As a method of dividing a substrate to produce a plurality of element chips, a method has been proposed in which a substrate is covered with a protective layer, the protective layer is patterned to form a mask, and then the substrate exposed from the mask is plasma-etched (Patent Document 1).

[0003] Prior Art Literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Publication No. 2015-519732 Summary of the invention

[0006] -Problems to be solved by the invention-

[0007] The element chip manufactured by plasma etching is manufactured through multiple steps including a step of forming a protective layer, a step of patterning the protective layer, a step of plasma etching, etc. Therefore, if there are deviations in the shape of the protective layer and mask manufactured by each step, the shape and quality of the element chip are unstable.

[0008] -Methods for solving the problem-

[0009] One aspect of the present invention relates to a cutting system, comprising: a protective layer forming device for forming a protective layer on a surface of a substrate; a patterning device for patterning the protective layer to form a mask; a plasma processing device for performing plasma etching on the substrate exposed from the mask to form a plurality of component chips; a measuring device for acquiring at least one processing data selected from a group including a first processing data related to the protective layer, a second processing data related to the mask, and a third processing data related to the component chip; and a control unit for operating at least one device selected from the group including the protective layer forming device, the patterning device, and the plasma processing device based on a recipe determined for each device, wherein the control unit determines whether to change the recipe based on at least one of the at least one processing data acquired, and changes at least one of the recipes if the recipe needs to be changed, and operates at least one device selected from the group including the protective layer forming device, the patterning device, and the plasma processing device based on the changed recipe.

[0010] Another aspect of the present invention relates to a cutting method, comprising: a protective layer forming step, forming a protective layer on a surface of a substrate based on a first scheme; a patterning step, patterning the protective layer and forming a mask based on a second scheme; a plasma processing step, performing plasma etching on the substrate exposed from the mask based on a third scheme to form a plurality of element chips; a measuring step, acquiring at least one processing data selected from a group including a first processing data related to the protective layer, a second processing data related to the mask, and a third processing data related to the element chip; a scheme changing step, judging whether to change at least one scheme selected from a group including the first scheme, the second scheme, and the third scheme based on at least one of the acquired at least one processing data, and changing the at least one scheme when the change of the at least one scheme is required; and a feedback step, feeding back the changed at least one scheme to the control of the process corresponding to the at least one scheme. In the first example of the cutting method, the at least one scheme is the first scheme, and when the change of the first scheme is required, in the feedback step, the changed first scheme is fed back to the control of the protective layer forming step. In the second example of the cutting method, the at least one scheme is the second scheme, and when the second scheme needs to be changed, the changed second scheme is fed back to the control of the patterning step in the feedback step. In the third example of the cutting method, the at least one scheme is the third scheme, and when the third scheme needs to be changed, the changed third scheme is fed back to the control of the plasma treatment step in the feedback step.

[0011] Another aspect of the present invention relates to a cutting method, comprising: a protective layer forming step, based on a first scheme, forming a protective layer on the surface of a substrate; a patterning step, based on a second scheme, patterning the protective layer and forming a mask; a plasma processing step, based on a third scheme, plasma etching the substrate exposed from the mask to form a plurality of component chips; a measuring step, acquiring at least one of a first processing data related to the protective layer, a second processing data related to the mask, and a third processing data related to the component chip; a first scheme changing step, determining whether to change the first scheme based on at least one of the acquired first processing data, the second processing data, and the third processing data, and changing the first scheme when the change of the first scheme is required; and a first feedback step, feeding back the changed first scheme to the control of the protective layer forming step.

[0012] Another aspect of the present invention relates to a cutting method, comprising: a protective layer forming step, based on a first scheme, forming a protective layer on the surface of a substrate; a patterning step, based on a second scheme, patterning the protective layer and forming a mask; a plasma processing step, based on a third scheme, plasma etching the substrate exposed from the mask to form a plurality of component chips; a measuring step, acquiring at least one of a first processing data related to the protective layer, a second processing data related to the mask, and a third processing data related to the component chip; a second scheme changing step, based on at least one of the acquired first processing data, the second processing data, and the third processing data, determining whether to change the second scheme, and changing the second scheme if the second scheme needs to be changed; and a second feedback step, feeding back the changed second scheme to the control of the patterning step.

[0013] Another aspect of the present invention relates to a cutting method, comprising: a protective layer forming step, based on a first scheme, forming a protective layer on the surface of a substrate; a patterning step, based on a second scheme, patterning the protective layer to form a mask; a plasma processing step, based on a third scheme, plasma etching the substrate exposed from the mask to form a plurality of component chips; a measuring step, acquiring at least one of a first processing data related to the protective layer, a second processing data related to the mask, and a third processing data related to the component chip; a third scheme changing step, based on at least one of the acquired first processing data, the second processing data, and the third processing data, determining whether to change the third scheme, and changing the third scheme if the third scheme needs to be changed; and a third feedback step, feeding back the changed third scheme to the control of the plasma processing step.

[0014] Another aspect of the present invention relates to a cutting method, comprising: a protective layer forming step, based on the first scheme, forming a protective layer on the surface of a substrate; a patterning step, based on the second scheme, patterning the protective layer to form a mask; a plasma processing step, based on the third scheme, plasma etching the substrate exposed from the mask to form a plurality of component chips; a measuring step, acquiring second processing data related to the mask; a third scheme changing step, determining whether to change the third scheme based on the acquired second processing data, and changing the third scheme when the third scheme needs to be changed; and a feed forward step, feeding forward the changed third scheme to the control of the plasma processing step.

[0015] -Effects of the Invention-

[0016] According to the present invention, the quality of the obtained element chip is improved.

[0017] The novel features of the present invention are set forth in the appended claims, but the present invention, both as to structure and content, will be better understood through the following detailed description taken in conjunction with other objects and features of the present invention and by comparison with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a block diagram showing an example of the configuration of a cutting system according to an embodiment of the present invention.

[0019] Figure 2 It is a block diagram showing another example of the configuration of the cutting system according to the embodiment of the present invention.

[0020] Figure 3 It is a block diagram showing still another example of the structure of the cutting system involved in the embodiment of the present invention.

[0021] Figure 4 This is a flowchart showing an example of processing performed by the control unit according to the embodiment of the present invention.

[0022] Figure 5 This is a flowchart showing another example of the processing performed by the control unit according to the embodiment of the present invention.

[0023] Figure 6 This is a flowchart for explaining method Ia of the cutting method according to an embodiment of the present invention.

[0024] Figure 7 This is a flowchart for explaining method Ib of the cutting method according to an embodiment of the present invention.

[0025] Figure 8 This is a flowchart illustrating method Ic of the cutting method involved in an embodiment of the present invention.

[0026] Fig. 9 This is a flowchart for explaining Form II-a of the dicing method according to the embodiment of the present invention.

[0027] Fig.10 It is a cross-sectional view schematically showing a portion of the substrate (mth sheet) after the patterning step when the second processing data exceeds the allowable range set based on the target data.

[0028] Fig.11 1 is a cross-sectional view schematically showing a portion of a substrate (mth substrate) after a plasma processing step when the second processing data exceeds an allowable range set based on target data.

[0029] Fig.12It is a cross-sectional view schematically showing a part of the substrate (m+nth sheet) patterned using the modified second scheme.

[0030] Fig.13 1 is a cross-sectional view schematically showing a portion of a substrate (m+nth substrate) subjected to plasma treatment.

[0031] Fig.14 This is a flowchart for explaining Form II-b of the cutting method according to the embodiment of the present invention.

[0032] Fig.15 This is a flowchart for explaining Form III-a of the dicing method according to the embodiment of the present invention.

[0033] Fig.16 1 is a cross-sectional view schematically showing a portion of a substrate (m+nth substrate) subjected to plasma processing based on the modified third aspect.

[0034] Fig.17 This is a flowchart for explaining aspect III-b of the dicing method according to the embodiment of the present invention.

[0035] Fig.18 1 is a cross-sectional view schematically showing a portion of a substrate (mth substrate) subjected to plasma processing based on the modified third aspect.

[0036] Fig.19 This is a flowchart for explaining aspect III-c of the dicing method according to the embodiment of the present invention.

[0037] Fig. 20 1 is a cross-sectional view schematically showing a portion of a substrate (mth substrate) subjected to plasma treatment. DETAILED DESCRIPTION

[0038] The recipe (etching conditions) used in plasma etching is usually determined by analyzing a large amount of accumulated processing data. The processing data is obtained by changing the etching conditions according to each substrate to be etched and repeatedly processing. The determined recipe is input into a plasma processing device, and plasma etching is performed based on it. Plasma etching is usually performed continuously on multiple substrates of the same type.

[0039] The above scheme is determined on the premise that a mask in a state set as a target is formed on the substrate. However, in actual processing, the state of the mask may not be consistent with the set value. For example, the actual patterning width may be larger than the set value. In this case, if plasma etching is performed according to the scheme determined based on past processing data, the etching amount of the substrate becomes excessive, and the quality of the obtained component chip is reduced.

[0040] Furthermore, even if the etching conditions are set as in the scheme, desired etching may not be performed due to the internal state of the device used or changes in components over time.

[0041] Therefore, in this embodiment, the etching conditions are changed based on the data related to the shape of the mask actually formed, and the plasma processing device is feedback controlled or feedforward controlled. In addition, in this embodiment, the following methods are included: a method of changing the protective layer forming conditions based on the data related to the shape of the mask actually formed, and a method of feedback controlling the protective layer forming device; and a method of changing the patterning conditions based on the data related to the shape of the mask actually formed, and a method of feedback controlling the patterning device.

[0042] Furthermore, the present embodiment includes the following methods: a method of changing the protective layer forming conditions based on data related to the actually manufactured component chip and performing feedback control on the protective layer forming device; a method of changing the patterning conditions based on data related to the actually manufactured component chip and performing feedback control on the patterning device; and a method of changing the etching conditions based on data related to the actually manufactured component chip and performing feedback control on the plasma processing device. By performing at least one of the above feedforward control and feedback control, the quality of the obtained component chip is improved.

[0043] By using feedback control and feedforward control, data on the mask actually formed and / or data on the element chip obtained by etching are used to change the plan, and the changed plan is applied to the dicing process. Thus, high-quality element chips can be manufactured efficiently.

[0044] The generation of the change plan can be automatically performed using an algorithm for plan generation. The application of the change plan to each device can also be automatically performed by the control unit. Therefore, the number of processes is reduced and productivity is improved.

[0045] A. Cutting system

[0046] The dicing system according to the present embodiment includes a protective layer forming device, a patterning device, a plasma processing device, a measuring device, and a control unit.

[0047] The protective layer forming device forms a protective layer on the surface of the substrate based on the first scheme. The patterning device patterns the protective layer and forms a mask based on the second scheme. The plasma processing device performs plasma etching on the substrate exposed from the mask based on the third scheme to form a plurality of element chips. The measuring device acquires at least one processing data selected from the group including the first processing data related to the protective layer, the second processing data related to the mask, and the third processing data related to the element chip. The control unit controls at least one device selected from the group including the protective layer forming device, the patterning device, and the plasma processing device.

[0048] (Control Department)

[0049] The control unit generates a plan in detail, determines whether the plan needs to be changed, changes the plan, and operates each device according to the optimal plan.

[0050] Whether to change the plan is determined based on at least one of the acquired processing data (the acquired first processing data, the acquired second processing data, and the acquired third processing data). For example, when any processing data exceeds the allowable range set based on the target data, it is determined that a change in the plan is required. The so-called target data refers to various data related to the target mask and component chip. More than one processing data may be used. Multiple processing data may also be used to determine whether a change in the plan is required. The multiple processing data may be more than two first processing data, more than two second processing data, more than two third processing data, or a combination of these processing data.

[0051] The changed scheme is not particularly limited, and is at least one scheme selected from the group consisting of the first scheme, the second scheme, and the third scheme (hereinafter sometimes referred to as a scheme). The scheme for controlling the process that most affects the deviation between the processing data and the target data may be changed.

[0052] One of the important factors that causes the first, second or third processing data to exceed the allowable range is a defective condition of the protective layer. In this case, the first scheme is changed. Furthermore, the protective layer forming device is feedback-controlled so that a protective layer is formed on other substrates processed later based on the changed first scheme.

[0053] One of the important factors that the second or third processing data exceeds the allowable range is inappropriate patterning. In this case, the second scheme is changed. And the patterning device is feedback-controlled so that other substrates to be processed later are patterned based on the changed second scheme.

[0054] One of the important factors that causes the third processing data to exceed the allowable range is inappropriate plasma etching. In this case, the third plan is changed. In addition, the plasma processing device is feedback-controlled so that other substrates to be processed later are plasma-processed based on the changed third plan.

[0055] Even when the second processing data exceeds the allowable range, the third processing data can be brought within the allowable range by changing the plasma processing scheme. That is, by resetting the etching conditions suitable for the mask to be formed, a high-quality component chip can be obtained. In this case, the plasma processing device is feedback-controlled or feedforward-controlled so that the third scheme is changed, and the substrate is plasma-processed based on the changed third scheme.

[0056] In the control unit, in addition to the protective layer forming device, the patterning device, and the plasma processing device, for example, an input unit is also connected. The input unit is, for example, provided in each device. For example, at least one of target data, first processing data, second processing data, and third processing data is input to the input unit. The input of the target data is performed by an operator. The input of the processing data can be performed by an operator or automatically from a measuring device.

[0057] The administrator of the server to which the control unit is connected, the owner of the protective layer forming device, the owner of the patterning device, and the owner of the plasma processing device may be different. The above-mentioned server and each device are connected through a computer network. If necessary data is input to the input unit, the data is sent to the server. The control unit reads the necessary data from the server, performs calculations as needed, and causes each device to perform remote operations based on the results.

[0058] The control unit includes, for example, a storage unit, a calculation unit, and a device control unit.

[0059] The storage unit is connected to a first database storing information for generating a recipe. The first database stores accumulated past processing data, substrate data related to a substrate to be etched, and equipment data related to at least one of a protective layer forming device, a patterning device, and a plasma processing device.

[0060] The accumulated processing data includes etching conditions, etching rate of the component chip associated with the etching conditions, etching depth, width of the formed groove, aspect ratio, etc. The substrate data includes the batch number, the material of the substrate, the type of the mounted component, etc. The equipment data includes the specifications of the device, the last maintenance date, the processing history, the log data during the processing, etc.

[0061] When the cutting process starts, the operation unit first generates the best solution (initial solution) for the substrate as the object based on the various data stored in the first database and the target data input by the input unit. However, any one of the first solution, the second solution and the third solution can also be determined in advance. In this case, an initial solution other than the determined solution is generated. The determined solution can also be input to the input unit. The input target data is stored in the first database.

[0062] When the cutting process is performed, at least one of the first processing data, the second processing data, and the third processing data is input to the input unit, and the calculation unit determines whether to change the initial plan based on various data stored in the first database and the newly input processing data. If it is determined that the initial plan needs to be changed, the control unit generates a change plan to change the initial plan. A predetermined algorithm is used in the generation of the initial plan and the change plan.

[0063] The scheme generated by the operation unit is stored in the storage unit as a second database. The second database stores the initial scheme and the modified scheme generated by the operation unit. The scheme stored in the second database can be used together with the first database to generate modified schemes and initial schemes for other types of substrates.

[0064] The device control unit operates the protective layer forming device, the patterning device, and the plasma processing device based on the generated initial plan or the modified plan.

[0065] (Simulator)

[0066] The cutting system may also include a simulator. The simulator calculates prediction data related to the processing shape of the component chip based on the second processing data and the third scheme. The prediction data is stored in a storage unit serving as a third database. The third scheme used by the simulator may be an initial scheme or a changed scheme. The simulator may include, for example, a computer. The server may also include a simulator (i.e., a simulation function).

[0067] The simulator can also be used to generate a third solution. For example, the simulator is used to predict the processing shapes of multiple obtained element chips based on the second processing data and the accumulated processing data. In addition, the calculation unit calculates the differences between the multiple processing shapes of the predicted element chips and the desired processing shapes, and generates the best third solution in consideration of these differences. This third solution replaces the initial third solution and is used for plasma processing.

[0068] In addition, the prediction data can be used to determine whether there is an abnormality in the plasma processing device. For example, when the absolute value of the difference between the prediction data calculated by the simulator and the third processing data as the actual measured value exceeds a predetermined threshold value, it can be determined that there is an abnormality in the plasma processing device. In this case, it is desirable to perform maintenance on the device. On the other hand, when the absolute value of the difference between the prediction data and the third processing data is less than a threshold value, it can be determined that there is no abnormality in the plasma processing device. In this case, the simulator can also be further used to generate a third scheme as described above. This third scheme replaces the initial third scheme and is used for plasma processing.

[0069] (Reporting Department)

[0070] In this embodiment, a notification unit is provided in the cutting system to notify the maintenance period.

[0071] Specifically, in a cutting system equipped with a simulator, when the absolute value of the difference between the predicted data and the third processing data as the measured value is greater than a preset threshold value, the control unit uses a prescribed algorithm to determine which of the protective layer forming device, the patterning device, and the plasma processing device is the cause, and calculates the maintenance period. The calculation result is notified to the owner or operator of each device through the reporting unit. On the other hand, when the absolute value of the difference between the predicted data and the third processing data as the measured value is less than a preset threshold value, the control unit determines whether to generate a change plan as described above. The threshold value is usually set to exceed the allowable range of the target data.

[0072] The reporting unit, for example, includes a display unit for displaying the maintenance period, or a sound generating unit for notifying that the maintenance period has arrived. The reporting unit notifies the owner or operator of each device of the maintenance period by display or sound. The reporting unit can also notify other information. The reporting unit can be provided in any one of the mask forming device, the patterning device, and the plasma processing device, or can be provided in a server having a control unit.

[0073] (Order Department)

[0074] The cutting system may further include an ordering unit for automatically ordering parts of the device. The control unit causes the reporting unit to notify the maintenance period of the cause device and causes the ordering unit to order parts of the cause device. Thus, predictive maintenance of the cutting system can be performed, and productivity is improved.

[0075] (Protective layer forming device)

[0076] The protective layer forming device is not particularly limited as long as it can form a protective layer on the surface of the substrate. Examples of the protective layer forming device include a spin coater, a spray coater, a die coater, and a laminator.

[0077] As a first aspect, for example, the type of mask material, the amount of mask material applied, the application speed, etc. are exemplified.

[0078] (Patterning Device)

[0079] The patterning device is not particularly limited as long as it can pattern the protective layer. The patterning device can be appropriately selected according to the material of the protective layer. When the protective layer includes a photosensitive resin, it can be patterned by an exposure device. When the protective layer includes other resins, it can be patterned by a laser processing device.

[0080] When using an exposure device, the exposure amount, the depth of focus, etc. are exemplified as the second means.

[0081] When a laser processing device is used, laser output, scanning speed, pulse width, frequency, etc. are exemplified as the second scheme.

[0082] (Plasma processing device)

[0083] The plasma processing apparatus is not particularly limited as long as it can perform plasma etching on the substrate exposed from the mask. The plasma processing apparatus includes, for example, a reaction chamber; a plasma generating unit for generating plasma in the reaction chamber; and a mounting table disposed inside the reaction chamber and mounting the substrate. The plasma generating unit includes, for example, an electrode disposed at the top of the reaction chamber; and a process gas source for supplying a plasma generating gas (process gas) to the reaction chamber. In a state where the process gas is supplied to the reaction chamber, high-frequency power is supplied to the above-mentioned electrode, thereby generating plasma in the reaction chamber.

[0084] As a third solution, the pressure in the reaction chamber, the type and flow rate of the process gas, the magnitude of the high-frequency power, the frequency of the high-frequency power, the processing time, etc. are exemplified.

[0085] (Measurement device)

[0086] The measuring device is not particularly limited as long as it can obtain at least one of the first processing data related to the protective layer, the second processing data related to the mask, and the third processing data related to the element chip. Examples of the measuring device include an optical shape measuring device and a scanning electron microscope (SEM).

[0087] As the first processing data, the film thickness of the protective layer, its deviation, and parameters indicating the state of the surface of the protective layer are exemplified. The parameters indicating the state of the surface of the protective layer include, for example, the presence or absence of pinholes on the surface of the protective layer, roughness (flatness), etc. In addition, when the substrate has concavities and convexities on the surface, the parameters indicating the state of the surface of the protective layer include data related to the covering state based on the concavities and convexities of the protective layer.

[0088] As the second processing data, there are exemplified patterning width or its deviation, mask thickness or its deviation, parameters indicating the state of the mask surface, etc. The parameters indicating the state of the mask surface include, for example, the presence or absence of pinholes on the mask surface, roughness (flatness), etc. In addition, when the substrate has concavities and convexities on the surface, the parameters indicating the state of the mask surface include data related to the coverage state based on the concavities and convexities of the mask.

[0089] As the third processing data, there are exemplified parameters indicating the state of the surface of the mask covering the surface of the element chip, parameters indicating the shape of the end face of the element chip, the distance between adjacent element chips or its deviation, etc. The parameters indicating the state of the surface of the mask covering the surface of the element chip include, for example, the presence or absence of pinholes on the mask surface, the roughness (flatness), etc. In addition, in the case where the substrate has concavities and convexities on the surface, the parameters indicating the state of the surface of the mask covering the surface of the element chip include data related to the covering state based on the concavities and convexities of the mask.

[0090] The parameters representing the shape of the end face of the element chip include, for example, the height and width of the capillary formed on the end face, the size and number of the gaps formed on the end face, the inclination angle of the end face, the size of the notch, etc. The distance between adjacent element chips includes, for example, the distance between element chips on the mask side and the distance between element chips on the side opposite to the mask.

[0091] The data related to the coverage state of the concave and convex parts specifically include the thickness of the protective layer or mask (hereinafter sometimes referred to as the protective layer, etc.) covering the concave parts, the thickness of the protective layer, etc. covering the convex parts, or the ratio of the thickness of the protective layer, etc. covering the concave parts to the convex parts.

[0092] (Substrate)

[0093] The substrate to be etched is not particularly limited. For example, a substrate used in the manufacture of electronic equipment, a circuit substrate on which a circuit is formed, a mounting substrate on which electronic components are mounted, a semiconductor substrate, etc. may be exemplified. Bumps, pad electrodes, etc. may also be arranged on the surface of the substrate. In this case, the surface of the substrate may have concave and convex portions.

[0094] Figure 1 This is a block diagram showing an example of the structure of the cutting system involved in this embodiment.

[0095] The cutting system 1000A includes a control unit 100 , a protective layer forming device 200 , a patterning device 300 , a plasma processing device 400 , a measuring device 500 , and an input unit 600 .

[0096] The target data D00, the first processing data D01, the second processing data D02, and the third processing data D03 related to the target substrate to be etched are input to the input unit 600. At least any one of the first processing data D01, the second processing data D02, and the third processing data D03 may be input. The first processing data D01 is data related to the formed protective layer acquired by the measuring device 500. The second processing data D02 is data related to the formed mask acquired by the measuring device 500. The third processing data D03 is data related to the formed element chip acquired by the measuring device 500. The measuring devices that acquire the first processing data D01, the second processing data D02, and the third processing data D03 may be the same or different.

[0097] The control unit 100 includes a storage unit 101, a calculation unit 102, and an apparatus control unit 103. The storage unit 101 stores a first database DB01 and a second database DB02. The first database DB01 stores and accumulates processing data, substrate data, and equipment data. The second database DB02 stores initial plans and modified plans generated by the calculation unit 102.

[0098] At least one of the first plan, the second plan, and the third plan is generated in the calculation unit 102. The plan generated here may be an initial plan or a modified plan.

[0099] The device control unit 103 operates at least one of the protective layer forming device 200 , the patterning device 300 , and the plasma processing device 400 based on the generated initial plan or the modified plan.

[0100] Figure 2 This is a block diagram showing another example of the structure of the cutting system involved in this embodiment.

[0101] The cutting system 1000B includes the simulator 700 and a third database DB03 stored in the storage unit 101. Figure 1 The cutting system 1000A shown has the same structure.

[0102] The simulator 700 calculates prediction data related to the element chip based on the second processed data D02 input to the input unit 600 and the third solution stored in the second database DB02. The calculation unit 102 calculates the difference between the prediction data calculated by the simulator 700 and the third processed data D03 as the actual measurement value, and generates a change solution based on the difference. The prediction data calculated by the simulator 700 is stored in the third database DB03.

[0103] Figure 3 This is a block diagram showing another example of the structure of the cutting system involved in this embodiment.

[0104] The cutting system 1000C has a report unit 800 and an order unit 900, and also has Figure 2 The cutting system 1000B shown has the same structure.

[0105] The calculation unit 102 calculates the difference between the predicted data calculated by the simulator 700 and the third processed data D03 which is the actual measurement value, and determines whether the absolute value of the difference exceeds the threshold value. When the absolute value of the difference exceeds the threshold value, the calculation unit 102 further performs calculations to identify the cause device and calculate the maintenance period. The maintenance period is notified to the owner or operator of the cause device through the reporting unit 800. When the absolute value of the difference is less than the threshold value, it is determined whether to generate a change plan.

[0106] The ordering unit 900 orders components of the cause device from the manufacturer as needed.

[0107] Figure 4 This is a flowchart showing an example of processing performed by the control unit according to the present embodiment.

[0108] The cutting process is started, and target data is input to the input unit (S01). The control unit reads the accumulated processing data stored in the first database, and generates an initial plan suitable for the target substrate based on the accumulated processing data and the target data (S02). The generated initial plan is stored in the second database. And each device operates based on the initial plan, and the substrate is processed based on the initial plan. (S03).

[0109] A cutting process is performed to obtain processing data obtained from a substrate processed by each device, namely, at least one of the first processing data, the second processing data, and the third processing data (S04). The control unit determines whether to change the initial plan based on the target data and each processing data (S05). If it is determined that the initial plan does not need to be changed, each device is controlled to act based on the initial plan (S06). On the other hand, if it is determined that the initial plan needs to be changed, the control unit generates a change plan and changes the initial plan (S07). Each device is controlled to act based on the change plan (S08). A prescribed algorithm is used in the generation of the initial plan and the change plan. The generated change plan is stored in the second database.

[0110] Figure 5 A flowchart showing another example of the processing performed by the control unit according to the present embodiment. Figure 5 Indicates the case where a simulator is set.

[0111] The cutting process is started, and target data is input to the input unit (S01). The control unit reads the accumulated processing data stored in the first database, and generates an initial plan suitable for the target substrate based on the accumulated processing data and the target data (S02). The generated initial plan is stored in the second database. And each device operates based on the initial plan, and the substrate is processed based on the initial plan. (S03).

[0112] When the cutting process is performed and both the second processing data and the third processing data are obtained (S04), the control unit reads the third solution stored in the second database and starts the simulator. The simulator calculates the prediction data related to the component chip based on the second processing data and the third solution (S05). The prediction data is stored in the third database.

[0113] Next, the difference between the calculated prediction data and the third processed data as the actual measurement value is calculated (S06). The control unit determines whether the absolute value of the difference is within the set threshold value (S07). If it is determined that the absolute value of the difference is within the threshold value, it determines whether to change the third plan (S08). The subsequent steps (S09 to S11) are the same as Figure 4 Steps S06 to S08 shown are performed in the same manner.

[0114] On the other hand, if it is determined that the absolute value of the difference is not within the threshold, the control unit uses a predetermined algorithm to determine the cause device and calculate the maintenance period (S12). Then, the control unit controls the reporting unit to notify the operator of the maintenance period of the cause device (S13).

[0115] B. Cutting method

[0116] The cutting method involved in this embodiment comprises: a protective layer forming step, based on the first scheme, forming a protective layer on the surface of the substrate; a patterning step, based on the second scheme, patterning the protective layer and forming a mask; a plasma processing step, based on the third scheme, plasma etching the substrate exposed from the mask to form a plurality of component chips; a measuring step, acquiring at least one of the first processing data related to the protective layer, the second processing data related to the mask, and the third processing data related to the component chip; a scheme changing step, judging whether to change the scheme based on at least one of the first processing data, the second processing data, and the third processing data, and changing any of the above schemes when a change in the scheme is required; and a feedback step, feeding back the changed scheme to the control of the corresponding process. In the case where the third scheme is changed, the changed scheme can also be fed forward.

[0117] When the first scheme is changed, the changed scheme is fed back to the protective layer forming device, and the protective layer forming process performed thereafter is performed according to the changed first scheme. When the second scheme is changed, the changed scheme is fed back to the patterning device, and the patterning process performed thereafter is performed according to the changed second scheme. When the third scheme is changed, the changed scheme is fed back to or fed forward to the plasma processing device. In the case of feedback, the plasma processing process performed thereafter is performed according to the changed third scheme. In the case of feedforward, the plasma processing process is performed according to the changed third scheme.

[0118] Hereinafter, the cutting method involved in the present embodiment is divided into a method I for determining a change of the first scheme, a method II for determining a change of the second scheme, and a method III for determining a change of the third scheme for explanation. The exemplary method is executed by the above-mentioned cutting system. However, the cutting method involved in the present embodiment is not limited thereto.

[0119] [Method I]

[0120] This aspect determines whether to change the first plan based on at least one of the first processed data, the second processed data, and the third processed data.

[0121] (Method Ia)

[0122] In this method, the second processing data related to the mask formed on the m-th substrate (m is an integer greater than or equal to 1) is used to determine whether to change the first scheme for controlling the protective layer forming process. The changed first scheme is fed back to the protective layer forming process of the m+n-th substrate (n is an integer greater than or equal to 1). Figure 6 This is a flowchart for explaining this method.

[0123] (1) Input of target data

[0124] Target data is input to an input unit connected to a control unit (ST001).

[0125] The calculation unit generates at least one of the first plan, the second plan, and the third plan based on the target data and the first database, etc., using a predetermined algorithm (ST002). The generated initial plan is stored in the second database.

[0126] (2) Formation of protective layer

[0127] Based on the first aspect, a protective layer is formed on the surface of the m-th substrate (ST003).

[0128] The protective layer includes, for example, a so-called resist material such as a thermosetting resin such as polyimide, a photoresist such as a phenolic resin, or a water-soluble resist such as an acrylic resin. The protective layer is formed by, for example, molding the resist material into a sheet and attaching the sheet to a laminated substrate, or applying a raw material liquid of the resist material to the substrate by a method such as spin coating or spray coating.

[0129] The thickness of the protective layer is not particularly limited, but is preferably such that it is not completely removed by plasma etching in a subsequent process. The thickness of the protective layer is, for example, the total amount (thickness) of the protective layer etched during plasma etching is calculated and is greater than the etching amount. The thickness of the protective layer is, for example, greater than 5 μm and less than 60 μm.

[0130] From the viewpoint of workability, after the protective layer forming step, it is preferred that the substrate be handled while being supported by a supporting member. The supporting member is, for example, a resin film. The outer periphery of the supporting member is, for example, fixed to a metal frame.

[0131] (3) Patterning

[0132] The protective layer is patterned based on the second method to form a mask (ST004). As a result, a portion of the substrate is exposed from the mask.

[0133] The mask is formed, for example, by removing the area corresponding to the area to be removed by etching the substrate (divided area) in the protective layer formed by the photoresist using photolithography. The divided area of ​​the substrate in the protective layer formed by the thermosetting resin or the water-soluble resist may also be removed by laser scribing. In patterning, a part of the substrate may also be removed together with the protective layer.

[0134] (4) Acquisition of Second Processing Data

[0135] The second processing data related to the formed mask is acquired (ST005).

[0136] In this embodiment, the thickness of the mask is acquired as the second processing data.

[0137] (5) Plasma etching

[0138] The portion of the m-th substrate exposed from the mask is plasma-etched based on the third scheme (ST006). Thus, a plurality of element chips are formed, and the dicing process for the m-th substrate is completed.

[0139] (6) Changes to Plan 1

[0140] It is determined whether the second processed data acquired in the above is within the permissible range (ST007). Specifically, the thickness of the mask as the actual measurement value is compared with the thickness of the mask in the target data to determine whether it is permissible.

[0141] If it is determined that the second processing data exceeds the allowable range set based on the target data, the control unit generates a new first plan (ST008) and changes the first plan. The changed first plan is used in the step of forming a protective layer for the m+n-th substrate (ST011). Thus, a mask having a predetermined thickness is formed, which can prevent the surface of the element chip from being directly exposed to plasma and being damaged during plasma etching.

[0142] On the other hand, if it is determined that the second processing data is within the allowable range, the first plan is not changed, and the initial first plan is applied to the m+n-th substrate.

[0143] Masks are formed in the same manner as above for the m+nth and subsequent substrates, and it is determined whether or not the first solution needs to be changed (ST012 to ST015). Then, the first solution is changed as necessary (ST016).

[0144] (Method Ib)

[0145] This embodiment is the same as the embodiment 1a except that the modified first scheme is fed back to the protective layer formation of the m-th substrate. Thus, high-quality element chips can be obtained at a high yield.

[0146] This method can be applied to the case where the mask is patterned by a method other than laser processing. This is because, in laser processing, a portion of the substrate can be removed during patterning. In the case of patterning by other methods, the mask is temporarily completely removed, and a protective layer is formed again on the mth substrate based on the modified first scheme. Figure 7 is a flowchart illustrating this method.

[0147] In this method, before performing plasma processing on the m-th substrate, it is determined whether the second processing data is within the allowable range (ST006). If it is determined that the second processing data exceeds the allowable range, the first plan is changed (ST007). The changed first plan is used for the reformation of the protective layer on the m-th substrate. On the other hand, if it is determined that the second processing data is within the allowable range, the first plan is not changed, and the plasma processing on the m-th substrate is performed using the initial plan (ST008).

[0148] (Method Ic)

[0149] This method is the same as the method Ia except that the third processing data related to the device chip produced by the m-th substrate is used. The modified first scheme is fed back to the formation of the protective layer of the m+n-th substrate. Figure 8 This is a flowchart for explaining this method.

[0150] In this method, after plasma etching, the third processing data related to the manufactured element chip is obtained (ST006). As the third processing data, for example, the thickness of the mask covering the surface of the element chip is obtained. The thickness of the mask as a measured value is compared with the thickness of the mask in the target data to determine whether it is allowed (ST007). If it is not allowed, the first scheme is changed (ST008). The changed first scheme is used to form a protective layer for the substrate of the m+nth piece. Thus, a mask with a desired thickness is formed.

[0151] In addition, in the method 1a and the method 1b, the case where the thickness of the mask is used as the second processing data is described, but it is not limited to this. In the case where there are unevenness due to bumps, pad electrodes, etc. on the surface of the substrate, data related to the coverage state of the unevenness can also be used as at least one of the first processing data, the second processing data, and the third processing data.

[0152] When a substrate having projections and depressions is used, the thickness of the protective layer or the like covering the projections is likely to be thinner than the depressions. Therefore, the mask covering the projections may be completely removed during etching, and the projections may be directly exposed to plasma and damaged. By changing the first scheme using data related to the covering state of the projections and depressions as at least one of the first processing data, the second processing data, and the third processing data, the projections can be covered with a protective layer or the like of sufficient thickness. Therefore, the quality of the obtained element chip is improved.

[0153] In addition, in the method Ia, the method Ib and the method Ic, the second processing data or the third processing data is used, but the first processing data can also be used to determine whether the scheme needs to be changed. In this case, after the protective layer is formed, the first processing data related to the formed protective layer is obtained. As the first processing data, the thickness of the protective layer is preferably used.

[0154] [Method II]

[0155] This method determines whether to change the second plan based on the second processed data and / or the third processed data.

[0156] (Method II-a)

[0157] In this method, the second processing data related to the mask formed on the m-th substrate is used to determine whether to change the second scheme for controlling the patterning process. In other respects, method II-a is the same as method Ia. The changed second scheme is fed back to the patterning of the m+n-th substrate. Fig. 9 This is a flowchart for explaining this method.

[0158] In this embodiment, for example, a patterning width is acquired as the second processing data, and the patterning width as an actual measurement value is compared with the patterning width in the target data to determine whether it is permissible.

[0159] Fig.10 1 is a cross-sectional view schematically showing a portion of the m-th substrate after the patterning process when the second processing data exceeds the allowable range set based on the target data. A mask 30 is formed on one main surface of the substrate 10. The other main surface of the substrate 10 is attached to and supported by a support member 40. In the m-th substrate 10, the patterning width W is greater than the target value W. 0 Large, exceeding the allowable range (W>>W 0 ).

[0160] If the m-th substrate is subjected to plasma treatment based on the initial scheme, the etching amount increases and the distance between the element chips increases. When the substrate is supported by a support member, the support member functions as a stop layer. Therefore, due to the excessive plasma treatment, the end face of the element chip on the support member side moves inward significantly.

[0161] Fig.11 1 is a cross-sectional view schematically showing a portion of the m-th substrate after the plasma processing step when the second processing data exceeds the allowable range set based on the target data. A plurality of element chips 20 are manufactured from the m-th substrate. The distance D1 on the mask 30 side and the distance D2 on the support member 40 side between the element chips 20 are both smaller than the target value D1. 0 Large, exceeding the allowable range (D1, D2>>D 0 ). Furthermore, the end surface of the element chip 20 on the support member 40 side is inward, and the distance D2 between the element chips 20 is larger than the distance D1. This means that the verticality of the end surface of the element chip 20 is low.

[0162] Therefore, when patterning the m+nth substrate, the modified second solution is used. As a result, the patterning width is within the allowable range and becomes a value suitable for subsequent plasma processing. Therefore, the shapes of multiple component chips become uniform and the verticality of the end faces is also improved.

[0163] Fig.12 2 is a cross-sectional view schematically showing a portion of the m+nth substrate patterned using the modified second scheme. The patterning width W converges to the target value W 0 Within the allowable range (W≈W 0 ).

[0164] Fig.131 is a cross-sectional view schematically showing a portion of the m+nth substrate subjected to plasma treatment. The distance D1 between the element chips 20 on the mask 30 side and the distance D2 on the side opposite to the mask 30 are both the target values ​​D 0 Within the allowable range (D1, D2≈D 0 ). Furthermore, the difference between the distance D2 and the distance D1 between the element chips 20 is also small (D1≈D2), and the verticality of the end faces of the element chips 20 is improved.

[0165] (Method II-b)

[0166] This method is the same as the method II-a except that the third processing data related to the element chip is used. The modified second scheme is fed back to the patterning of the m+n-th substrate. Fig.14 This is a flowchart for explaining this method.

[0167] In this method, after plasma etching, the third processing data related to the manufactured component chip is obtained (ST006). As the third processing data, for example, the distance between adjacent component chips is obtained. The distance between the component chips as the measured value is compared with the distance between the component chips in the target data to determine whether it is allowed (ST007). If it is not allowed, the second scheme is changed (ST008). The changed second scheme is used to form a protective layer for the substrate of the m+nth piece. As a result, the patterning width becomes a value suitable for the subsequent plasma processing. Therefore, the distance between the component chips is appropriated.

[0168] [Method III]

[0169] This method determines whether to change the third plan based on the second processed data and / or the third processed data.

[0170] (Method III-a)

[0171] In this method, the second processing data related to the mask formed on the m-th substrate is used to determine whether to change the third scheme for controlling the plasma processing step. In other respects, the method III-a is the same as the method Ia. The changed third scheme is fed back to the plasma processing of the m+n-th substrate. Fig.15 This is a flowchart for explaining this method.

[0172] In this method, for example, the pattern width is obtained as the second processing data and compared with the pattern width in the target data. However, in this method, even if the pattern width W as the measured value exceeds the target value W 0 In the case of the allowable range (W>>W 0), the patterning is also allowed, and the third scheme is changed. In other words, the quality of the element chip is improved by performing plasma processing under conditions suitable for a wider patterning width.

[0173] However, the component chip manufactured according to the modified third scheme needs to be within the allowable range of the target data. Therefore, before performing the plasma treatment on the m+nth substrate, the simulator can also calculate the prediction data related to the component chip based on the second processing data and the third scheme of the predetermined modification. When the prediction data converges within the allowable range of the target value, the third scheme of the predetermined modification is adopted. On the other hand, when the prediction data exceeds the allowable range of the target value, the calculation unit generates a scheme that converges within the allowable range of the target value, and further modifies the third scheme of the predetermined modification.

[0174] Here, if the shape of the mask deviates significantly from the target, or the deviation between the second processing data and the target value is too large, the operation unit may not be able to generate the third solution that converges within the allowable range of the target value. In this case, as the patterning is not allowed, the situation is notified by the reporting unit, etc. Further, the second solution related to the mask can also be changed as needed. The changed second solution is fed back to the mask formation of the substrate of the m+nth piece. Alternatively, the mask formed on the substrate of the mth piece can be completely removed, and based on the changed second solution, a protective layer and a mask are formed again on the substrate of the mth piece.

[0175] Fig.16 1 is a cross-sectional view schematically showing a portion of the m+nth substrate subjected to plasma treatment based on the modified third scheme. The distance D1 between the element chips 20 on the mask 30 side and the distance D2 on the side opposite to the mask 30 are both equal to the target value D 0 To the same extent (D1, D2 ≈ D 0 ). Furthermore, the difference between the distance D2 and the distance D1 between the element chips 20 is also small.

[0176] (Method III-b)

[0177] This embodiment is the same as the embodiment III-a, except that the modified third scheme is fed forward to the plasma processing of the m-th substrate. Fig.17 This is a flowchart for explaining this method.

[0178] In this embodiment, the third recipe changed based on the second processing data related to the m-th substrate is used for plasma processing of the same m-th substrate. Thus, high-quality device chips can be obtained with a high yield.

[0179] In this embodiment, as in Embodiment III-a, the pattern width is obtained as the second processing data and compared with the pattern width in the target data. 0 In the case of the allowable range (W>>W 0 ), and the third scheme is changed. Thus, a plasma treatment suitable for a wider patterning width is performed, and the quality of the element chip is improved.

[0180] Fig.18 1 is a cross-sectional view schematically showing a portion of the Nth substrate subjected to plasma treatment based on the modified third scheme. The distance D1 between the element chips 20 on the mask 30 side and the distance D2 on the side opposite to the mask 30 are both equal to the target value D 0 To the same extent (D1, D2 ≈ D 0 ). Furthermore, the difference between the distance D2 and the distance D1 between the element chips 20 is also small.

[0181] (Method III-c)

[0182] This method is the same as the method III-a except that the third processing data related to the device chip is used. The modified third method is fed back to the plasma processing of the m+n-th substrate. Fig.19 This is a flowchart for explaining this method.

[0183] In this method, as the third processing data, for example, the size and number of gaps formed on the end face of the component chip and the inclination angle of the end face are obtained. The measured values ​​of the parameters representing the shape at the end face of these component chips are compared with the above parameters in the target data to determine whether they are allowed.

[0184] Fig. 20 2 is a cross-sectional view schematically showing a portion of the m-th substrate treated by plasma. The distance D2 between the element chips 20 is smaller than the distance D1, and the verticality of the end face is reduced. Therefore, when the m+n-th substrate is subjected to plasma treatment, the modified third scheme is used. As a result, the plasma treatment is optimized. Therefore, the verticality of the end face is improved.

[0185] As mentioned above, the cutting method according to the present embodiment has been described by taking specific examples, but the cutting method according to the present embodiment is not limited thereto.

[0186] For example, in each of the above-mentioned methods, it is shown that whether the change of the plan is required is determined based on any one of the second processed data and the third processed data, but the method of determination is not limited to this. Whether the change of the plan is required can also be determined based on both the second processed data and the third processed data. For example, when the difference between the second processed data and the target data is large, but the third processed data is good, it can be determined that the change of the plan is not required. On the other hand, when the second processed data is good, but the difference between the third processed data and the target data is large, it can be determined that the plan needs to be changed.

[0187] Industrial Applicability

[0188] The dicing system and dicing method of the present invention can improve the quality of the obtained element chips, and thus the dicing system and dicing method of the present invention can be suitably used to manufacture various element chips.

[0189] The preferred embodiments of the present invention are described, but such disclosure is not intended to be limiting. Various modifications and changes will be apparent to those skilled in the art in the art of the present invention upon reading the above disclosure. Therefore, the appended claims should be interpreted as including all modifications and changes without departing from the actual spirit and scope of the present invention.

[0190] -Explanation of symbols-

[0191] 1000A, 1000B, 1000C: Cutting system

[0192] 100: Control Department

[0193] 101: Storage

[0194] 102: Operation Department

[0195] 103: Device control unit

[0196] 200: Protective layer forming device

[0197] 300: Patterning device

[0198] 400: Plasma treatment device

[0199] 500: Measuring device

[0200] 600: Input

[0201] 700: Simulator

[0202] 800: Reporting Department

[0203] 900: Order Department

[0204] 10: Substrate

[0205] 20: Component Chip

[0206] 30: Mask

[0207] 40: Supporting member

[0208] D00: Target data

[0209] D01: 1st processing data

[0210] D02: Second processing data

[0211] D03: The third processing data

[0212] DB01: Database No. 1

[0213] DB02: The second database.

Claims

1. A cutting system comprising: A protective layer forming device forms a protective layer on the surface of the substrate; A patterning device, patterning the protective layer to form a mask; A plasma processing device for performing plasma etching on the substrate exposed from the mask to form a plurality of element chips; a measuring device that acquires at least one processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chip; and a control unit that operates at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device based on a plan determined for each device; The control unit determines whether to change the scheme based on at least one of the at least one processing data obtained, changes at least one of the schemes if the scheme needs to be changed, and operates at least one device selected from the group including the protective layer forming device, the patterning device, and the plasma processing device based on the changed scheme, The control unit determines whether to change the plan based on the third processed data.

2. The cutting system according to claim 1, wherein: The third processing data includes parameters indicating a shape of an end surface of the element chip.

3. The cutting system according to claim 2, wherein: The control unit changes the plan related to the plasma processing apparatus when the plan needs to be changed.

4. The cutting system according to claim 1, wherein: The third processing data includes parameters indicating a state of a surface of a mask covering the surface of the element chip.

5. The cutting system according to claim 4, wherein: The control unit changes at least one of the schemes related to the protective layer forming device and the patterning device when the scheme needs to be changed.

6. A cutting system comprising: A protective layer forming device forms a protective layer on the surface of the substrate; A patterning device, patterning the protective layer to form a mask; A plasma processing device for performing plasma etching on the substrate exposed from the mask to form a plurality of element chips; a measuring device that acquires at least one processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chip; and a control unit that operates at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device based on a plan determined for each device; The control unit determines whether to change the scheme based on at least one of the at least one processing data obtained, changes at least one of the schemes if the scheme needs to be changed, and operates at least one device selected from the group including the protective layer forming device, the patterning device, and the plasma processing device based on the changed scheme, The control unit determines whether to change the plan based on the second processed data.

7. The cutting system according to claim 6, wherein: The second processing data includes a patterning width.

8. The cutting system according to claim 7, wherein: The control unit changes the protocol related to the patterning device when a change in the protocol is required.

9. A cutting system comprising: A protective layer forming device forms a protective layer on the surface of the substrate; A patterning device, patterning the protective layer to form a mask; A plasma processing device for performing plasma etching on the substrate exposed from the mask to form a plurality of element chips; a measuring device that acquires at least one processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chip; and a control unit that operates at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device based on a plan determined for each device; The control unit determines whether to change the scheme based on at least one of the at least one processing data obtained, changes at least one of the schemes if the scheme needs to be changed, and operates at least one device selected from the group including the protective layer forming device, the patterning device, and the plasma processing device based on the changed scheme, The cutting system also has: a simulator that calculates prediction data related to the element chip based on the second processing data and the scenario related to the plasma processing apparatus; and The calculation unit calculates a difference between the predicted data and the third processed data.

10. The cutting system according to claim 9, wherein: The cutting system further comprises: a reporting unit for notifying the plasma processing device of a maintenance period; The control unit causes the notification unit to notify the maintenance period when the absolute value of the difference is larger than a preset threshold value.

11. A cutting method comprising: A protective layer forming step, based on the first embodiment, forming a protective layer on the surface of the substrate; A patterning step, based on the second solution, patterning the protective layer to form a mask; A plasma processing step, based on the third scheme, plasma etching the substrate exposed from the mask to form a plurality of element chips; a measuring step of acquiring at least one processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chip; a scheme changing step of determining whether to change the first scheme based on at least one of the at least one processing data acquired, and changing the first scheme if the change of the first scheme is necessary; and A feedback step of feeding back the changed first scheme to the control of the protective layer forming step.

12. A cutting method comprising: A protective layer forming step, based on the first embodiment, forming a protective layer on the surface of the substrate; A patterning step, based on the second solution, patterning the protective layer to form a mask; A plasma processing step, based on the third scheme, plasma etching the substrate exposed from the mask to form a plurality of element chips; a measuring step of acquiring at least one processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chip; a scheme changing step of determining whether to change the second scheme based on at least one of the at least one processing data acquired, and changing the second scheme if change of the second scheme is required; and A feedback step of feeding back the changed second scheme to the control of the patterning step.

13. A cutting method comprising: A protective layer forming step, based on the first embodiment, forming a protective layer on the surface of the substrate; A patterning step, based on the second solution, patterning the protective layer to form a mask; A plasma processing step, based on the third scheme, plasma etching the substrate exposed from the mask to form a plurality of element chips; a measuring step of acquiring at least one processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chip; a scheme changing step of determining whether to change the third scheme based on at least one of the at least one processing data acquired, and changing the third scheme if change of the third scheme is required; and A feedback step of feeding back the changed third scheme to the control of the plasma processing step.

14. A cutting method comprising: A protective layer forming step, based on the first embodiment, forming a protective layer on the surface of the substrate; A patterning step, based on the second solution, patterning the protective layer to form a mask; A plasma processing step, based on the third scheme, plasma etching the substrate exposed from the mask to form a plurality of element chips; and A measuring step of acquiring second processing data related to the mask; a third plan changing step of determining whether to change the third plan based on the acquired second processing data, and changing the third plan if the change of the third plan is necessary; and The feedforward step feeds forward the changed third scheme to the control of the plasma processing step.

Images