Vapor Growth Equipment

Abstract

The present invention provides a vapor phase growth device capable of improving the uniformity of the temperature of a substrate. The vapor phase growth device comprises: a reaction chamber; a support, which is arranged in the reaction chamber and carries a substrate; a first and a second heater, which are respectively arranged in the reaction chamber and are located below the support, the support comprising: an inner region; an annular outer region, which surrounds the inner region and surrounds the substrate when the substrate is carried; and a support portion, which is arranged on the inner region and can support the lower surface of the substrate, is annular and has an arc portion, the distance between the outer peripheral end of the arc portion and the inner peripheral end of the outer region is less than 6 mm, the width of the support portion is more than 3 mm, and when the substrate is placed on the support in a manner that the center of the substrate is consistent with the center of the support, if the radius of the substrate is R1, the radius of the outer peripheral end of the arc portion is R4, and the distance between the outer peripheral end of the substrate and the inner peripheral end of the outer region opposite to the arc portion is D1, then the following formula 1 is satisfied. R1-D1>R4 (Formula 1).

Description

[0001] [Related Application]

[0002] This application claims priority based on Japanese Patent Application No. 2020-186828 (filing date: November 9, 2020), and this application includes all the contents of the basic application by reference. Technical Field

[0003] The present invention relates to a vapor phase growth apparatus for forming a film by supplying gas to a surface of a substrate. Background Art

[0004] As a method for forming a high-quality semiconductor film, there is an epitaxial growth technique that forms a single crystal film on the surface of a substrate by vapor growth. In a vapor growth apparatus using the epitaxial growth technique, a substrate is placed on a holder in a reaction chamber maintained at normal pressure or reduced pressure.

[0005] Then, while heating the substrate, a process gas containing a raw material of the film is supplied to the reaction chamber through a buffer chamber above the reaction chamber. A thermal reaction of the process gas occurs on the surface of the substrate, and an epitaxial single crystal film is formed on the surface of the substrate.

[0006] The characteristics of an epitaxial single crystal film formed on a substrate surface are dependent on the temperature of the substrate. Therefore, in order to improve the uniformity of the characteristics of a film formed on a substrate, it is desirable to improve the uniformity of the temperature on the substrate surface. In particular, in the case of a film formed at a high temperature such as a silicon carbide film, it is difficult to maintain the uniformity of the temperature on the substrate surface.

[0007] Japanese Patent Publication No. 2018-37537 describes a vapor phase growth apparatus in which a support portion is provided on a susceptor that supports a substrate in order to uniformly heat the substrate. Summary of the invention

[0008] An object of an embodiment of the present invention is to provide a vapor phase growth apparatus capable of improving the uniformity of the temperature of a substrate.

[0009] A vapor growth device according to one embodiment of the present invention comprises: a reaction chamber; a support arranged in the reaction chamber and carrying a substrate; a first heater arranged in the reaction chamber and located below the support; and a second heater arranged in the reaction chamber and located above the support, wherein the support comprises: an inner region; an annular outer region surrounding the inner region and surrounding the substrate when the substrate is carried thereon; and a support portion arranged above the inner region and capable of supporting the lower surface of the substrate, the support portion being annular and having an arc portion, the distance between the outer peripheral end of the arc portion and the inner peripheral end of the outer region being 6 mm or less, the width of the support portion being 3 mm or more, and when the substrate is carried on the support in a manner such that the center of the substrate coincides with the center of the support, if the radius of the substrate is defined as R1, the radius of the outer peripheral end of the arc portion is defined as R4, and the distance between the outer peripheral end of the substrate and the inner peripheral end of the outer region opposite to the arc portion is defined as D1, then the following formula 1 is satisfied.

[0010] R1-D1>R4 (Formula 1)

[0011] Furthermore, when the radius of the film quality assurance region of the substrate is defined as R2 and the radius of the inner peripheral end of the arc portion is defined as R3, the bracket may satisfy the following equations 2 and 3.

[0012] R2-D1>R3 (Formula 2)

[0013] R2+D1<R4 (Formula 3)

[0014] Furthermore, the outer region of the bracket may include: a first member including carbon; and a second member provided on the first member, separable from the first member and including silicon carbide on at least a surface thereof.

[0015] Furthermore, a boundary between the first member and the second member may be located below an upper surface of the substrate placed on the holder.

[0016] Furthermore, the second member may be made of silicon carbide.

[0017] Furthermore, the first member may include an outer peripheral fixing portion that protrudes upward from an outer peripheral end of the first member and surrounds the second member.

[0018] Furthermore, the first member may include an inner peripheral fixing portion that protrudes upward from an inner peripheral end of the first member and is surrounded by the second member.

[0019] Furthermore, the bracket may include a plurality of protrusions on the inner peripheral side of the outer region.

[0020] Furthermore, the substrate may have an orientation flat, the support portion may have a straight portion along the orientation flat when the substrate is placed on the holder, and an inner peripheral end of the outer region facing the straight portion may be in a straight line shape.

[0021] In addition, the distance between the outer peripheral end of the straight portion and the inner peripheral end of the outer region may be greater than the distance between the outer peripheral end of the arc portion and the inner peripheral end of the outer region.

[0022] According to the embodiment of the present invention, it is possible to realize a vapor phase growth apparatus capable of improving the uniformity of the temperature of a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic cross-sectional view of the vapor phase growth apparatus according to the first embodiment.

[0024] Figure 2 Schematic diagram of the stent according to the first embodiment.

[0025] Figure 3 Schematic diagram of the stent according to the first embodiment.

[0026] Figure 4 It is an enlarged schematic cross-sectional view of the stent according to the first embodiment.

[0027] Figure 5 It is an enlarged schematic cross-sectional view of the stent according to the first embodiment.

[0028] Figure 6 is a schematic diagram of a stent according to a first comparative example.

[0029] Figure 7 is a schematic diagram of a stent according to a first comparative example.

[0030] Figure 8 is a schematic diagram of a stent according to a first comparative example.

[0031] Fig. 9 is a schematic diagram of a stent according to a first comparative example.

[0032] Fig.10 It is an explanatory diagram of the first problem of the stent of the first comparative example.

[0033] Fig.11 It is an explanatory diagram of the first problem of the stent of the first comparative example.

[0034] Fig.12 It is an explanatory diagram of the second problem of the stent of the first comparative example.

[0035] Fig.13It is an explanatory diagram of the second problem of the stent of the first comparative example.

[0036] Fig.14 It is an explanatory diagram of the function and effect of the first embodiment.

[0037] Fig.15 It is an explanatory diagram of the function and effect of the first embodiment.

[0038] Fig.16 It is an explanatory diagram of the function and effect of the first embodiment.

[0039] Fig.17 It is an explanatory diagram of the function and effect of the first embodiment.

[0040] Fig.18 It is an explanatory diagram of the function and effect of the first embodiment.

[0041] Fig.19 It is an explanatory diagram of the function and effect of the first embodiment.

[0042] Fig. 20 It is an explanatory diagram of the function and effect of the first embodiment.

[0043] Fig.21 It is an explanatory diagram of the function and effect of the first embodiment.

[0044] Fig. 22 is a schematic diagram of a stent according to a second comparative example.

[0045] Fig.23 It is an enlarged schematic cross-sectional view of a stent according to a second comparative example.

[0046] Fig.24 It is an enlarged schematic cross-sectional view of a stent according to a second comparative example.

[0047] Fig.25 It is an enlarged schematic cross-sectional view of the stent according to the first embodiment.

[0048] Fig.26 It is an enlarged schematic cross-sectional view of the stent according to the first embodiment.

[0049] Fig. 27 is a schematic diagram of a stent according to a second embodiment.

[0050] Fig.28 is a schematic diagram of a stent according to a third embodiment.

[0051] Fig.29 is a schematic diagram of a stent according to a third embodiment.

[0052] Fig.30 It is an explanatory diagram of the function and effect of the third embodiment.

[0053] Fig.31 It is an explanatory diagram of the function and effect of the third embodiment.

[0054] Fig.32 Schematic diagram of a stent according to a fourth embodiment.

[0055] Fig.33 It is an enlarged schematic cross-sectional view of a stent according to a fourth embodiment.

[0056] Fig.34 It is an enlarged schematic cross-sectional view of a stent according to a fourth embodiment.

[0057] Fig.35 It is an enlarged schematic cross-sectional view of a stent according to a fourth embodiment.

[0058] Fig.36 It is an enlarged schematic cross-sectional view of a stent according to a fourth embodiment.

[0059] Fig.37 is a schematic diagram of a stent according to a fifth embodiment.

[0060] Fig.38 It is an enlarged schematic cross-sectional view of the stent according to the fifth embodiment.

[0061] Fig.39 It is an enlarged schematic cross-sectional view of the stent according to the fifth embodiment.

[0062] Fig.40 is a schematic diagram of a stent according to a sixth embodiment.

[0063] Fig.41 is a schematic diagram of a stent according to a seventh embodiment.

[0064] Fig.42 is a schematic diagram of a stent according to a seventh embodiment.

[0065] Fig.43 is a schematic diagram of a stent according to an eighth embodiment.

[0066] Fig.44 It is an explanatory diagram of the function and effect of the eighth embodiment.

[0067] Fig.45 It is an explanatory diagram of the function and effect of the eighth embodiment.

[0068] Description of Reference Numerals

[0069] 10. Reaction Chamber

[0070] 14 Base (bracket)

[0071] 22 First Heater

[0072] 42 Second Heater

[0073] 50 Inner area

[0074] 52 Outer area

[0075] 54 Support

[0076] 54a Arc section

[0077] 54b Straight section

[0078] 56 First Part

[0079] 58 Second Part

[0080] 100 Vapor Growth Device

[0081] OF Orientation Plane

[0082] W Wafer (Substrate)

[0083] Wa film quality assurance area

[0084] X distance

[0085] w Width DETAILED DESCRIPTION

[0086] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0087] In this specification, the same reference numerals may be used to designate the same or similar components.

[0088] In this specification, the direction of gravity when the vapor phase growth apparatus is set to a state where a film can be formed is defined as "down", and the opposite direction is defined as "up". Therefore, "down" refers to the position in the direction of gravity relative to the reference, and "below" refers to the direction of gravity relative to the reference. In addition, "upper" refers to the position in the direction opposite to the direction of gravity relative to the reference, and "above" refers to the direction opposite to the direction of gravity relative to the reference. In addition, "longitudinal" is the direction of gravity.

[0089] In this specification, the term "process gas" is a general term for gas used for forming a film, and is a concept including, for example, source gas, assist gas, dopant gas, carrier gas, and mixed gas thereof.

[0090] (First Embodiment)

[0091] The vapor growth device of the first embodiment comprises: a reaction chamber; a support, which is arranged in the reaction chamber and carries a substrate; a first heater, which is arranged in the reaction chamber and is located below the support; and a second heater, which is arranged in the reaction chamber and is located above the support, wherein the support comprises: an inner region; an annular outer region, which surrounds the inner region and surrounds the substrate when the substrate is carried thereon; and a support portion, which is arranged above the inner region and is capable of supporting the lower surface of the substrate, is annular and has an arc portion, the distance between the outer peripheral end of the arc portion and the inner peripheral end of the outer region is less than 6 mm, and the width of the support portion is greater than 3 mm. When the substrate is carried on the support in a manner such that the center of the substrate coincides with the center of the support, if the radius of the substrate is defined as R1, the radius of the outer peripheral end of the arc portion is defined as R4, and the distance between the outer peripheral end of the substrate and the inner peripheral end of the outer region opposite to the arc portion is defined as D1, then the following formula 1 is satisfied.

[0092] R1-D1>R4 (Formula 1)

[0093] Furthermore, if the radius of the film quality assurance region of the substrate is defined as R2 and the radius of the inner peripheral end of the arc portion is defined as R3, the bracket satisfies the following equations 2 and 3.

[0094] R2-D1>R3 (Formula 2)

[0095] R2+D1<R4 (Formula 3)

[0096] Figure 1 1 is a schematic cross-sectional view of a vapor phase growth apparatus according to Embodiment 1. The vapor phase growth apparatus 100 according to Embodiment 1 is, for example, a monolithic epitaxial growth apparatus that epitaxially grows a single-crystalline silicon carbide film on a single-crystalline silicon carbide substrate.

[0097] The vapor phase growth apparatus 100 of the first embodiment includes a reaction chamber 10 and a buffer chamber 13. The reaction chamber 10 includes a susceptor 14 (holder), a rotating body 16, a rotating shaft 18, a rotation drive mechanism 20, a first heater 22, a reflector 28, a support column 30, a fixed table 32, a fixed shaft 34, a hood 40, a second heater 42, a gas exhaust port 44, and a gas conduit 53. The buffer chamber 13 includes a partition plate 39 and a gas supply port 85.

[0098] The reaction chamber 10 is made of, for example, stainless steel. The reaction chamber 10 has a cylindrical wall. In the reaction chamber 10, a silicon carbide film is formed on a wafer W. The wafer W is an example of a substrate. The wafer W is, for example, a semiconductor wafer. The wafer W is, for example, a single crystal silicon carbide wafer.

[0099] The susceptor 14 is provided in the reaction chamber 10. The wafer W can be placed on the susceptor 14. The susceptor 14 is an example of a support.

[0100] The susceptor 14 is formed of a material having high heat resistance, such as silicon carbide, graphite, or graphite coated with silicon carbide, tantalum carbide, pyrolytic graphite, or the like.

[0101] The base 14 is fixed to the upper part of the rotating body 16. The rotating body 16 is fixed to the rotating shaft 18. The base 14 is fixed to the rotating shaft 18 indirectly.

[0102] The rotation shaft 18 can be rotated by the rotation drive mechanism 20. The susceptor 14 can be rotated by rotating the rotation shaft 18. The wafer W mounted on the susceptor 14 can be rotated by rotating the susceptor 14.

[0103] The wafer W can be rotated at a rotation speed of, for example, 300 rpm or more and 3000 rpm or less by the rotation drive mechanism 20. The rotation drive mechanism 20 is composed of, for example, a motor and a bearing.

[0104] The first heater 22 is provided below the susceptor 14. The first heater 22 is provided inside the rotating body 16. The first heater 22 heats the wafer W held on the susceptor 14 from below. The first heater 22 is, for example, a resistance heater. The first heater 22 is, for example, a disc-shaped disc having a comb-shaped pattern.

[0105] The reflector 28 is disposed below the first heater 22. The first heater 22 is disposed between the reflector 28 and the susceptor 14.

[0106] The reflector 28 reflects the heat radiated downward from the first heater 22, thereby improving the heating efficiency of the wafer W. In addition, the reflector 28 prevents the components below the reflector 28 from being heated. The reflector 28 is, for example, in the shape of a disk. The reflector 28 is formed of a material with high heat resistance, such as silicon carbide, graphite, or graphite coated with silicon carbide, tantalum carbide, pyrolytic graphite, etc.

[0107] The reflector 28 is fixed to a fixing table 32, for example, via a plurality of support pillars 30. The fixing table 32 is supported by a fixing shaft 34, for example.

[0108] In order to attach and detach the base 14 to and from the rotating body 16, a lift pin (not shown) is provided in the rotating body 16. The lift pin penetrates the reflector 28 and the first heater 22, for example.

[0109] The second heater 42 is disposed between the cover 40 and the inner wall of the reaction chamber 10. The second heater 42 is located above the susceptor 14.

[0110] The second heater 42 heats the wafer W held on the susceptor 14 from above. By heating the wafer W with the second heater 42 in addition to the first heater 22, the wafer W can be heated to a temperature required for growth of a silicon carbide film, for example, a temperature of 1500° C. or higher. The second heater 42 is, for example, a resistance heater.

[0111] The cover 40 has a cylindrical shape, for example, and has a function of preventing the first process gas G1 and the second process gas G2 from coming into contact with the second heater 42. The cover 40 is made of a material having high heat resistance, such as graphite or graphite coated with silicon carbide.

[0112] Gas outlet 44 is provided at the bottom of reaction chamber 10. Gas outlet 44 discharges the remaining byproducts and the remaining process gas after the source gas reacts on the surface of wafer W to the outside of reaction chamber 10. Gas outlet 44 is connected to a vacuum pump (not shown), for example.

[0113] In addition, a susceptor inlet and a gate valve (not shown) are provided in the reaction chamber 10. The susceptor 14 on which the wafer W is mounted can be carried into or out of the reaction chamber 10 through the susceptor inlet and the gate valve.

[0114] The buffer chamber 13 is provided above the reaction chamber 10. The buffer chamber 13 is provided with a gas supply port 85 for introducing the process gas G0. The process gas G0 introduced from the gas supply port 85 is filled into the buffer chamber 13.

[0115] The process gas G0 is, for example, a source gas of silicon (Si), a source gas of carbon (C), a doping gas of n-type impurities, a doping gas of p-type impurities, an auxiliary gas for suppressing clustering of silicon, and a mixed gas containing a carrier gas. The source gas of silicon is, for example, silane (SiH4). The source gas of carbon is, for example, propane (C3H8). The doping gas of n-type impurities is, for example, nitrogen. The doping gas of p-type impurities is, for example, trimethylaluminum (TMA). The auxiliary gas is, for example, hydrogen chloride (HCl). The carrier gas is, for example, argon or hydrogen.

[0116] The plurality of gas conduits 53 are provided between the buffer chamber 13 and the reaction chamber 10. The gas conduits 53 extend in a first direction from the buffer chamber 13 toward the reaction chamber 10. The plurality of gas conduits 53 supply the process gas G0 from the buffer chamber 13 to the reaction chamber 10.

[0117] Figure 2 Schematic diagram of the stent according to the first embodiment. Figure 2 (a) is a top view, Figure 2 (b) is Figure 2 AA' cross-sectional view of (a).

[0118] The base 14 has a center C2 (second center). The center C2 is, for example, the center position of a circle forming the outer edge of the base 14.

[0119] The susceptor 14 includes an inner region 50 and an outer region 52. The outer region 52 surrounds the inner region 50. When the wafer W is placed on the susceptor 14, the outer region 52 surrounds the wafer W.

[0120] The inner region 50 is in the shape of a disk, and the outer region 52 is in the shape of a ring.

[0121] An annular support portion 54 having an arc portion is provided on the inner region 50 . Figure 2 The support portion 54 is shown as a circular shape. Figure 2 The support portion 54 is shown as a whole in the form of an arc portion. The annular support portion 54 is provided separately from the outer region 52 .

[0122] The support portion 54 can support the lower surface of the wafer W when the wafer W is placed on the susceptor 14 .

[0123] The radius of the inner peripheral end of the support portion 54 is R3, and the radius of the outer peripheral end of the support portion 54 is R4.

[0124] Figure 3 Schematic diagram of the stent according to the first embodiment. Figure 3 (a) is related to Figure 2 (a) corresponds to the top view, Figure 3 (b) is related to Figure 2 (b) The corresponding cross-sectional view.

[0125] Figure 3 1 is a diagram showing a state where a wafer W is placed on the susceptor 14. Figure 3 , a situation is shown where the center C1 (first center) of the wafer W coincides with the center C2 (second center) of the susceptor 14 .

[0126] The chip W has a film quality guarantee area Wa and a film quality non-guaranteed area Wb. In this specification, film quality refers to, for example, film thickness, carrier concentration, surface roughness, defect density, carrier life, etc. In addition, the film quality guarantee area Wa is, for example, an area where the film thickness, carrier concentration, surface roughness, defect density, carrier life, etc. are guaranteed to meet specific specifications on the chip W, and is usually arranged on the central side of the chip W. The film quality non-guaranteed area Wb is, for example, an area where the film thickness, carrier concentration, surface roughness, defect density, carrier life, etc. are not guaranteed to meet specific specifications on the chip, and is usually arranged on the peripheral side of the chip. In addition, the film quality guarantee area Wa is sometimes determined according to the film quality such as film thickness, carrier concentration, surface roughness, defect density, carrier life, etc. In this specification, the film quality guarantee area Wa does not need to be equal for all film qualities, as long as the film quality guarantee area Wa is determined for at least any one film quality.

[0127] The radius of the wafer W is defined as R1. The radius of the film quality assurance region Wa is defined as R2. The difference between R1 and R2 is, for example, not less than 3 mm and not more than 6 mm.

[0128] The distance between the outer peripheral end of the wafer W and the inner peripheral end of the outer region 52 ( Figure 3 D1) in (b) is, for example, not less than 0.5 mm and not more than 3 mm.

[0129] The radius R3 of the inner peripheral end of the support portion 54 is equal to or greater than 85% of the radius R1 of the wafer W, for example.

[0130] The radius R1 of the wafer W, the radius R2 of the film quality assurance area Wa of the wafer W, the radius R3 of the inner peripheral end of the support portion 54, the radius R4 of the outer peripheral end of the support portion 54, and the distance D1 satisfy the following equations 1, 2, and 3.

[0131] R1-D1>R4 (Formula 1)

[0132] R2-D1>R3 (Formula 2)

[0133] R2+D1<R4 (Formula 3)

[0134] Figure 4 and Figure 5 It is an enlarged schematic cross-sectional view of the stent according to the first embodiment. Figure 4 and Figure 5 It is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52 . Figure 4 In the state where no wafer W is placed, Figure 5 The wafer W is shown in a state where the center C1 (first center) of the wafer W and the center C2 (second center) of the susceptor 14 coincide with each other.

[0135] The upper surface 52s of the outer region 52 is located above the upper surface 54s of the support portion 54. When the wafer W is placed on the susceptor 14, the upper surface 52s of the outer region 52 is located above the surface of the wafer W, for example.

[0136] The inner peripheral end of the outer region 52 ( Figure 4 E3 in FIG. 5 is separated from the support portion 54. The outer peripheral end ( Figure 4 The distance between the inner peripheral end E3 of the outer region 52 ( Figure 4 X) in the figure is, for example, greater than 2 mm and less than 6 mm.

[0137] The width of the support portion 54 ( Figure 4 The width w of the support portion 54 is equal to the radius R4 of the outer peripheral end E2 of the support portion 54 and the inner peripheral end ( Figure 4 The difference in radius R3 of E1).

[0138] The height of the support portion 54 ( Figure 4 The h) in the figure is, for example, not less than 0.5 mm and not more than 3 mm.

[0139] The height h of the support portion 54 is, for example, equal to or smaller than the width w of the support portion 54 .

[0140] like Figure 5 As shown, the end of the film quality assurance area Wa ( Figure 5 The end Ex of the film quality assurance region Wa is located above the support portion 54. In other words, the end Ex of the film quality assurance region Wa is located between the inner peripheral end E1 of the support portion 54 and the outer peripheral end E2 of the support portion 54.

[0141] When a silicon carbide film is formed on a wafer W using the vapor phase growth apparatus 100 , first, the susceptor 14 on which the wafer W is mounted is introduced into the reaction chamber 10 . The susceptor 14 is mounted on a rotating body 16 .

[0142] The wafer W is heated using the first heater 22 and the second heater 42 . For example, the wafer W is heated to a temperature of 1500° C. or higher. The process gas G0 is supplied from the buffer chamber 13 to the reaction chamber 10 through a plurality of gas conduits 53 .

[0143] The rotating body 16 is rotated by using the rotation drive mechanism 20 to rotate the susceptor 14. The wafer W mounted on the susceptor 14 rotates together with the susceptor 14.

[0144] A silicon carbide film is formed on the surface of the rotating wafer W.

[0145] Next, the operation and effects of the vapor phase growth apparatus according to the first embodiment will be described.

[0146] Figure 6 and Figure 7 is a schematic diagram of a stent according to a first comparative example. Figure 6 It is a top view. Figure 7 yes Figure 6 BB' cross-sectional view.

[0147] The susceptor 64 of the first comparative example has a center C2. The susceptor 64 includes an inner region 50 and an outer region 52. The outer region 52 surrounds the inner region 50. When the wafer W is placed on the susceptor 14, the outer region 52 surrounds the wafer W.

[0148] The base 64 of the first comparative example is different from the base 14 of the first embodiment in that it does not include the support portion 54 .

[0149] Figure 8 and Fig. 9 is a schematic diagram of a stent according to a first comparative example. Figure 8 is with Figure 6 The corresponding top view, Fig. 9 is with Figure 7 The corresponding cross-sectional view.

[0150] Figure 8 and Fig. 9 64 is a diagram showing a state where a wafer W is placed on the susceptor 64. Figure 8 as well as Fig. 9 , a situation where the center C1 of the wafer W coincides with the center C2 of the susceptor 64 is shown.

[0151] like Fig. 9 As shown, the entire back surface of the wafer W is in contact with the surface of the susceptor 64 .

[0152] Fig.10 and Fig.11 It is an explanatory diagram of the first problem of the stent of the first comparative example. Fig.10 and Fig.11 is a schematic diagram of a stent according to a first comparative example. Fig.10 is with Figure 8 The corresponding top view, Fig.11 is with Fig. 9 The corresponding cross-sectional view.

[0153] exist Fig.10 and Fig.11 , the center C1 of the wafer W is not consistent with the center C2 of the susceptor 64. In other words, Fig.10 and Fig.11 The wafer W is shown as being offset from the center C2 of the susceptor 64 .

[0154] When a silicon carbide film is formed on the surface of the wafer W, a byproduct 66 may be formed in a region of the inner region 50 of the susceptor 64 that is not covered by the wafer W. The byproduct 66 includes, for example, silicon carbide.

[0155] For example, if Fig.10 and Fig.11 As shown in the figure, when the wafer W goes over the byproduct 66, a part of the back surface of the wafer W is separated from the surface of the inner region 50 of the susceptor 64. A part of the back surface of the wafer W is separated from the surface of the inner region 50 of the susceptor 64, thereby increasing the temperature deviation of the surface of the wafer W. Therefore, the uniformity of the film quality of the silicon carbide film is reduced.

[0156] In addition, if the wafer W goes over the byproduct 66, for example, the byproduct 66 adheres to the back surface of the wafer W. If the byproduct 66 adheres to the back surface of the wafer W, the flatness of the back surface of the wafer W is impaired, which may cause problems in the manufacturing process after the silicon carbide film is formed. For example, defocus may occur in the photolithography process.

[0157] In addition, the phenomenon that the chip W goes over the by-product 66 is caused by the centrifugal force acting on the rotating chip W, the chip W being offset on the susceptor during the formation of the silicon carbide film, or the loading position of the chip W on the susceptor being different between the chips due to conveying deviation, etc.

[0158] Fig.12 and Fig.13 It is an explanatory diagram of the second problem of the stent of the first comparative example. Fig.12 and Fig.13 is a schematic diagram of a stent according to a first comparative example. Fig.12 is with Figure 8 The corresponding top view, Fig.13 is with Fig. 9 The corresponding cross-sectional view.

[0159] When a silicon carbide film is formed on the surface of a wafer W, Fig.13 As shown in FIG. 1 , the wafer W may be deformed into a concave shape due to the temperature difference between the front surface and the back surface of the wafer W. In this case, the process gas may spread to the gap generated between the back surface of the wafer W and the surface of the inner region 50 of the susceptor 64, and a byproduct 66 may be formed on the surface of the inner region 50 of the susceptor 64. In addition, a silicon carbide film may be directly formed on the back surface of the wafer W.

[0160] For example, the byproduct 66 formed on the surface of the inner region 50 of the susceptor 64 adheres to the back surface of the wafer W. If the byproduct 66 adheres to the back surface of the wafer W, the flatness of the back surface of the wafer W is impaired, which may cause problems in the manufacturing process after the silicon carbide film is formed. In addition, when the silicon carbide film is directly formed on the back surface of the wafer W, it will not become a flat film, and the flatness of the back surface of the wafer W is impaired, which may cause problems in the manufacturing process after the silicon carbide film is formed.

[0161] In addition, when the chip W is deformed into a concave shape, the back side of the chip W and the support part 54, especially on the center side of the chip W, form point contact, and the chip W will not follow the rotation of the base 64, or the center side of the chip W will be actively heated, which may cause the temperature distribution of the chip W to deteriorate.

[0162] In addition, Fig.12 and Fig.13 In the figure, the case where the center C1 of the wafer W coincides with the center C2 of the susceptor 64 is shown as an example. When the center C1 of the wafer W does not coincide with the center C2 of the susceptor 64, in other words, even when the wafer W is offset from the center C2 of the susceptor 64, the same problem as the case where the center C1 of the wafer W coincides with the center C2 of the susceptor 64 may occur.

[0163] Fig.14 and Fig.15 It is an explanatory diagram of the function and effect of the first embodiment. Fig.14 and Fig.15 Schematic diagram of the stent according to the first embodiment. Fig.14 It is a top view. Fig.15 It is a cross-sectional view. Fig.15 is with Figure 3 (b) The corresponding cross-sectional view.

[0164] exist Fig.14 and Fig.15 , the center C1 of the wafer W is not consistent with the center C2 of the susceptor 14. In other words, Fig.14 and Fig.15 The wafer W is shown as being offset from the center C2 of the susceptor 14 .

[0165] like Fig.15 As shown, in the susceptor 14 of the first embodiment, the wafer W is supported by the support portion 54. Therefore, even if the byproduct 66 is formed in the region of the inner region 50 of the susceptor 64 that is not covered by the wafer W, the byproduct 66 does not contact the back surface of the wafer W. Therefore, as in the first comparative example, the wafer W is mounted on the byproduct 66, thereby suppressing the degradation of the uniformity of the film quality of the silicon carbide film.

[0166] Furthermore, by the wafer W rising over the by-products 66 , the by-products 66 are prevented from adhering to the back surface of the wafer W. Therefore, it is possible to suppress the occurrence of problems in the manufacturing process after the silicon carbide film is formed.

[0167] Fig.16 and Fig.17 It is an explanatory diagram of the function and effect of the first embodiment. Fig.16 and Fig.17 Schematic diagram of the stent according to the first embodiment. Fig.16 It is a top view. Fig.17 It is a cross-sectional view. Fig.17 is with Figure 3 (b) The corresponding cross-sectional view.

[0168] When a silicon carbide film is formed on the surface of a wafer W, Fig.17 As shown, there is a case where the wafer W is deformed into a concave shape due to the temperature difference between the front surface and the back surface of the wafer W.

[0169] like Fig.17 As shown, in the susceptor 14 of the first embodiment, the wafer W is supported by the support portion 54. Therefore, a gap into which the process gas spreads is less likely to be generated between the back surface of the wafer W and the susceptor 14. Therefore, even when the wafer W is deformed into a concave shape, the spread of the process gas between the back surface of the wafer W and the surface of the susceptor 64 as in the first comparative example can be suppressed.

[0170] Therefore, the byproduct 66 formed on the back surface of the wafer W is also suppressed from being attached. In addition, the silicon carbide film is also suppressed from being directly formed on the back surface of the wafer W. Thus, it is possible to suppress the occurrence of problems in the manufacturing process after the silicon carbide film is formed.

[0171] In addition, Fig.16 and Fig.17 In the figure, the case where the center C1 of the wafer W coincides with the center C2 of the susceptor 14 is shown as an example. In the case where the center C1 of the wafer W coincides with the center C2 of the susceptor 14, in other words, even if the wafer W is offset from the center C2 of the susceptor 14, the same effect as the case where the center C1 of the wafer W coincides with the center C2 of the susceptor 14 can be obtained.

[0172] Fig.18 and Fig.19 It is an explanatory diagram of the function and effect of the first embodiment. Fig.18 and Fig.19 Schematic diagram of the stent according to the first embodiment. Fig.18 It is a top view. Fig.19 It is a cross-sectional view. Fig.19 is with Figure 3 (b) The corresponding cross-sectional view.

[0173] exist Fig.18 and Fig.19 , the center C1 of the wafer W is not consistent with the center C2 of the susceptor 14. In other words, Fig.18 and Fig.19 A situation in which the wafer W is offset from the center C2 of the susceptor 14 is shown. Fig.18 and Fig.19 The center C1 of the wafer W is shown to be offset from the center C2 of the susceptor 14 to the right in the figure.

[0174] Fig. 20 and Fig.21 It is an explanatory diagram of the function and effect of the first embodiment. Fig. 20 and Fig.21 Schematic diagram of the stent according to the first embodiment. Fig. 20 It is a top view. Fig.21 It is a cross-sectional view. Fig.21 is with Figure 3 (b) The corresponding cross-sectional view.

[0175] exist Fig. 20 and Fig.21 , the center C1 of the wafer W is not consistent with the center C2 of the susceptor 14. In other words, Fig. 20 and Fig.21 A situation in which the wafer W is offset from the center C2 of the susceptor 14 is shown. Fig. 20 and Fig.21 The center C1 of the wafer W is shown to be offset to the left in the figure from the center C2 of the susceptor 14 .

[0176] In the susceptor 14 of the first embodiment, the following formula 1 is satisfied regarding the radius R1 of the wafer W, the radius R4 of the outer peripheral end of the support portion 54 , and the distance D1 .

[0177] R1-D1>R4 (Formula 1)

[0178] Formula 1 means that even when the center C1 of the wafer W is offset from the center C2 of the susceptor 14 in one direction by D1, the end of the wafer W on the opposite side of the offset direction is located closer to the outer region 52 than the outer peripheral end E2 of the support portion 54. Fig.19 and Fig.21 Even when the center C1 of the wafer W is offset from the center C2 of the susceptor 14 as shown, the upper surface 54s of the support portion 54 is not exposed.

[0179] Heat is exchanged between the wafer W and the support portion 54 by heat conduction between the back surface of the wafer W and the support portion 54. That is, heat flows from the wafer W to the support portion 54, or heat flows out from the wafer W to the support portion 54. For example, when the temperature of the wafer W is lower than the temperature of the support portion 54, heat flows from the wafer W to the support portion 54. On the other hand, when the temperature of the wafer W is higher than the temperature of the support portion 54, heat flows out from the wafer W to the support portion 54.

[0180] Assuming that the upper surface 54s of the support portion 54 is exposed, the area of ​​the support portion 54 in contact with the back surface of the wafer W varies depending on the position of the wafer W. For example, the degree of heat exchange is lower at the position of the wafer W near the portion where the upper surface 54s of the support portion 54 is exposed than at the position of the wafer W near the portion where the upper surface 54s of the support portion 54 is not exposed.

[0181] Therefore, the degree of heat exchange between the wafer W and the support portion 54 varies depending on the position of the wafer W. Therefore, the temperature uniformity of the wafer W is reduced. In the susceptor 14 of the first embodiment, the upper surface 54s of the support portion 54 is not exposed, so the reduction in the temperature uniformity of the wafer W can be suppressed.

[0182] In addition, in the susceptor 14 of the first embodiment, since the upper surface 54s of the support portion 54 is not exposed, when the silicon carbide film is formed on the surface of the wafer W, it is possible to suppress the byproducts from being attached to the upper surface 54s of the support portion 54. Therefore, the wafer W is placed on top of the byproducts 66, thereby suppressing the byproducts 66 from being attached to the back surface of the wafer W.

[0183] The vapor phase growth apparatus 100 of the first embodiment includes a second heater 42 for heating, from above, the wafer W placed on the susceptor 14. The second heater 42 heats the wafer W placed on the susceptor 14 from the outer peripheral side of the susceptor 14.

[0184] The outer region 52 is close to the second heater 42, and the temperature tends to become high during the process of forming the silicon carbide film. Therefore, when the center C1 of the wafer W is offset from the center C2 of the susceptor 14, and the wafer W contacts the outer region 52, the portion of the wafer W that contacts the outer region 52 may become higher in temperature than other portions. In such a case, the vicinity of the end Ex of the film quality assurance region Wa around the portion of the wafer W that contacts the outer region 52 tends to become high in temperature. That is, near the end Ex of the film quality assurance region Wa that becomes high in temperature, the film quality tends to vary.

[0185] However, the distance X between the outer peripheral end E2 of the support portion 54 of the base 14 in the first embodiment and the inner peripheral end E3 of the outer side region 52 is 6 mm or less. Compared with the case where the distance X is greater than 6 mm in the first embodiment, the distance between the portion in contact with the outer side region 52 of the wafer W and the support portion 54 is closer, so it is easier for heat to flow out from the portion in contact with the outer side region 52 of the wafer W, through the wafer W, to the support portion 54 in contact with the back surface of the wafer W.

[0186] In addition, for the base 14 in the first embodiment, the width w of the support portion 54 is 3 mm or more. Compared with the case where the width w of the support portion 54 is less than 3 mm in the first embodiment, the contact area is larger, so heat exchange is promoted.

[0187] Thereby, near the end Ex of the film quality guarantee region Wa, high temperature can be suppressed around the portion of the wafer W in contact with the outer side region 52. That is, the temperature uniformity in the film quality guarantee region Wa of the wafer W is improved.

[0188] Fig. 22 It is a schematic view of the holder of the second comparative example. Fig. 22 (a) thereof is a top view, Fig. 22 and (b) thereof is a cross-sectional view.

[0189] Fig. 22 It is a view showing a state where the wafer W is placed on the base 74. In Fig. 22 it, a case where the center C1 of the wafer W coincides with the center C2 of the base 64 is shown.

[0190] The difference between the base 74 of the second comparative example and the base 14 of the first embodiment is that the radius R2 of the film quality guarantee region Wa of the wafer W, the radius R3 of the inner peripheral end of the support portion 54, the radius R4 of the outer peripheral end of the support portion 54, and the distance D1 do not satisfy the following formulas 2 and 3.

[0191] R2 - D1 > R3 (Formula 2)

[0192] R2 + D1 < R4 (Formula 3)

[0193] The base 74 of the second comparative example satisfies the following formulas 2' and 3'.

[0194] R2 - D1 < R3 (Formula 2')

[0195] R2 + D1 > R4 (Formula 3')

[0196] Fig.23 and Fig.24 is an enlarged schematic cross-sectional view of the holder of the second comparative example. Fig.23 and Fig.24It is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52 . Fig.23 This indicates a state where any end of the wafer W is shifted inward, that is, to the left in the figure, by D1. Fig.24 The diagram shows a state where an arbitrary end portion of the wafer W is shifted outward, that is, rightward in the figure by an amount D1.

[0197] Formula 2' means that Fig.23 As shown in FIG. 1 , when any end of the wafer W is offset inward by D1 relative to the susceptor 14, the end of the film quality assurance region Wa ( Fig.23 Ex) in the formula is located closer to the center of the base 74 than the inner peripheral end E1 of the support portion 54. In addition, formula 3' means that Fig.24 As shown, when any end of the wafer W is shifted outward by D1 , the end Ex of the film quality ensuring region Wa is located on the outer peripheral side of the susceptor 74 rather than the outer peripheral end E2 of the support portion 54 .

[0198] The end Ex of the film quality assurance region Wa is separated from the support portion 54, thereby reducing the uniformity of the film quality in the surface of the wafer W. This is considered to be because the heat exchange between the support portion 54 and the vicinity of the end Ex of the film quality assurance region Wa is insufficient, so that the temperature in the vicinity of the end Ex of the film quality assurance region Wa tends to vary, and the temperature uniformity in the surface of the wafer W is reduced.

[0199] Fig.25 and Fig.26 It is an enlarged schematic cross-sectional view of the stent according to the first embodiment. Fig.25 and Fig.26 It is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52 . Fig.25 This indicates a state where any end of the wafer W is shifted inward, that is, to the left in the figure, by D1. Fig.26 The diagram shows a state where an arbitrary end portion of the wafer W is shifted outward, that is, rightward in the figure by an amount D1.

[0200] The susceptor 14 of the first embodiment satisfies the following Expressions 2 and 3.

[0201] R2-D1>R3 (Formula 2)

[0202] R2+D1<R4 (Formula 3)

[0203] Formula 2 means that, in Fig.25 As shown in FIG. 1 , when any end of the wafer W is offset inward by D1 relative to the susceptor 14, the end of the film quality assurance region Wa ( Fig.25The end Ex of the film quality assurance region Wa is located on the support portion 54, which is closer to the outer peripheral side of the base 14 than the inner peripheral end E1 of the support portion 54. That is, it means that the end Ex of the film quality assurance region Wa is located above the support portion 54.

[0204] In addition, Formula 3 means that, in Fig.26 As shown, when any end of the wafer W is outwardly offset by D1, the end Ex of the film quality assurance region Wa is located closer to the inner circumference of the susceptor 14 than the outer circumferential end E2 of the support portion 54. That is, the end Ex of the film quality assurance region Wa is located above the support portion 54.

[0205] The susceptor 14 of the first embodiment always positions the end Ex of the film quality assurance region Wa above the support portion 54 even when the wafer W is offset relative to the susceptor 14. Therefore, heat exchange between the support portion 54 and the vicinity of the end Ex of the film quality assurance region Wa is promoted. As a result, the uniformity of the film quality within the surface of the wafer W is improved.

[0206] The difference between the radius R1 of the wafer W and the radius R2 of the film quality assurance area Wa is preferably 3 mm or more and 6 mm or less. By making the difference 3 mm or more, it becomes easier to ensure the film quality of the wafer W. In addition, by making the difference 6 mm or less, the proportion of the film quality assurance area Wa in the surface of the wafer W becomes larger.

[0207] The distance D1 between the outer peripheral end of the wafer W and the inner peripheral end E3 of the outer region 52 is preferably 0.5 mm or more and 3 mm or less. By setting the distance D1 to be 0.5 mm or more, it is easy to place the wafer W on the susceptor 14 using a transfer robot or the like. In addition, by setting the distance D1 to be 3 mm or less, it is easy to suppress the process gas from spreading between the outer peripheral end of the wafer W and the inner peripheral end E3 of the outer region 52 and forming byproducts between the support portion 54 and the inner peripheral end E3 of the outer region 52.

[0208] For example, when by-products are formed between the support portion 54 and the inner peripheral end E3 of the outer region 52, the by-products may sublime and re-adhere to the back surface of the wafer W. From the viewpoint of suppressing the re-adhesion of the by-products to the wafer W due to the sublimation of the by-products, it is preferable to suppress the formation of by-products between the support portion 54 and the inner peripheral end E3 of the outer region 52.

[0209] The radius R3 of the inner peripheral end E1 of the support portion 54 is preferably 85% or more of the radius R1 of the wafer W. By setting the radius R3 to 85% or more of the radius R1, the support portion 54 can hold the back side of the outer peripheral portion of the wafer W. Therefore, for example, when the wafer W is deformed into a concave shape, it is possible to prevent the back side of the wafer W from being in point contact with the support portion 54. Therefore, it is possible to suppress the wafer W from no longer following the rotation of the susceptor 14. In addition, it is possible to suppress the deterioration of the temperature distribution in the surface of the wafer W caused by the point contact between the back side of the wafer W and the support portion 54. Moreover, it is possible to suppress the process gas from spreading between the back side of the wafer W and the support portion 54 and forming by-products when the wafer W is deformed into a concave shape.

[0210] Furthermore, by setting the radius R3 to be 85% or more of the radius R1, the area of ​​the back surface of the wafer W exposed outside the outer peripheral end E2 of the support portion 54 can be reduced. Therefore, adhesion of byproducts caused by the process gas spreading to the back surface of the wafer W can be suppressed.

[0211] When the wafer W is placed on the susceptor 14 , the upper surface 52 s of the outer region 52 is preferably located above the surface of the wafer W. This can prevent the wafer W from being separated from the susceptor 14 during the rotation of the susceptor 14 .

[0212] The height h of the support portion 54 is preferably greater than 0.5 mm and less than 3 mm. When the height h is less than 0.5 mm, since the distance between the wafer W and the inner region is close, the temperature distribution in the surface of the wafer W is easily affected by the slight warping of the wafer. That is, due to the deviation of the warping of the wafer W, it is easy to produce a difference between wafers in the temperature distribution of the wafer W, which is easy to become a cause of deterioration in the reproducibility of the film quality. In addition, since it is difficult to make the center of gravity of the wafer W completely consistent with the center of rotation, the centrifugal force acts on the wafer W. Therefore, if the height h is greater than 3 mm, the moment acting on the inner peripheral end of the outer region 52 becomes larger. As a result, on the opposite side of the direction in which the centrifugal force of the wafer W acts, the susceptor 14 slightly floats or vibrates, and the wafer W is easy to fall off the susceptor, which is easy to cause deterioration in the reproducibility of the film quality.

[0213] The width w of the support portion 54 is preferably 10 mm or less. By setting the width w to 10 mm or less, it is easy to suppress the process gas from spreading between the back surface of the wafer W and the support portion 54 and forming byproducts when the wafer W is deformed into a concave shape.

[0214] As described above, according to the vapor phase growth apparatus of the first embodiment, the uniformity of the temperature of the substrate can be improved. Therefore, the uniformity of the characteristics of the film formed on the substrate can be improved.

[0215] (Second Embodiment)

[0216] The vapor phase growth apparatus of the second embodiment is different from the first embodiment in that the inner region is not in a disk shape but in a ring shape. Hereinafter, description of the contents overlapping with the first embodiment will be partially omitted.

[0217] Fig. 27 is a schematic diagram of a stent according to a second embodiment. Fig. 27 (a) is a top view, Fig. 27 (b) is Fig. 27 (a) CC' cross-sectional view.

[0218] The susceptor 14 has a center C2. The susceptor 14 includes an inner region 50 and an outer region 52. The outer region 52 surrounds the inner region 50. When the wafer W is placed on the susceptor 14, the outer region 52 surrounds the wafer W.

[0219] The inner region 50 is in the shape of a ring. An opening is present at the center of the inner region 50. The outer region 52 is in the shape of a ring.

[0220] As described above, according to the vapor phase growth apparatus of the second embodiment, the uniformity of the temperature of the substrate can be improved, similarly to the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.

[0221] (Third Embodiment)

[0222] The vapor phase growth apparatus of the third embodiment is different from the vapor phase growth apparatus of the first embodiment in that a plurality of protrusions are provided on the inner circumference of the outer region of the holder.

[0223] Fig.28 is a schematic diagram of a stent according to a third embodiment. Fig.28 (a) is a top view, Fig.28 (b) is Fig.28 (a) DD' cross-sectional view.

[0224] The susceptor 14 includes an inner region 50 and an outer region 52. The outer region 52 surrounds the inner region 50. When the wafer W is placed on the susceptor 14, the outer region 52 surrounds the wafer W.

[0225] The base 14 has a plurality of protrusions 55 on the inner peripheral side of the outer region 52 .

[0226] Fig.29 is a schematic diagram of a stent according to a third embodiment. Fig.29 (a) is related to Fig.28 (a) corresponds to the top view, Fig.29 (b) is related to Fig.28 (b) The corresponding cross-sectional view.

[0227] Fig.29 1 is a diagram showing a state where a wafer W is placed on the susceptor 14. Fig.29 , a situation where the center C1 of the wafer W coincides with the center C2 of the susceptor 14 is shown.

[0228] Fig.30 and Fig.31 It is an explanatory diagram of the function and effect of the third embodiment. Fig.30 and Fig.31 is a schematic diagram of a stent according to a third embodiment. Fig.30 It is a top view. Fig.31 It is a cross-sectional view. Fig.31 is with Fig.29 (b) The corresponding cross-sectional view.

[0229] exist Fig.30 and Fig.31 , the center C1 of W is not consistent with the center C2 of the base 14. In other words, Fig.30 and Fig.31 A situation in which the wafer W is offset from the center C2 of the susceptor 14 is shown.

[0230] When the wafer W is offset from the center C2 of the susceptor 14, the outer periphery of the wafer W contacts the outer region 52 via the protrusion 55. Therefore, the contact area between the outer periphery of the wafer W and the outer region 52 is reduced, for example, compared with the case of the susceptor 14 of the first embodiment. Therefore, the inflow of heat from the outer region 52 is suppressed, and the temperature uniformity of the wafer W is improved.

[0231] As described above, according to the vapor phase growth apparatus of the third embodiment, the uniformity of the temperature of the substrate can be further improved compared with the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate can be further improved.

[0232] (Fourth Embodiment)

[0233] The vapor phase growth apparatus of the fourth embodiment is different from the vapor phase growth apparatus of the first embodiment in that the outer region of the support includes a first component containing carbon and a second component disposed on the first component and separable from the first component and containing silicon carbide on at least the surface. Hereinafter, a part of the description of the contents repeated in the first embodiment will be omitted.

[0234] Fig.32 Schematic diagram of a stent according to a fourth embodiment. Fig.32 (a) is a top view, Fig.32 (b) is Fig.32 (a) EE' cross-sectional view.

[0235] Fig.33 and Fig.34It is an enlarged schematic cross-sectional view of a stent according to a fourth embodiment. Fig.33 and Fig.34 It is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52 . Fig.33 Indicates the state where no wafer W is placed. Fig.34 The state where the wafer W is placed is shown.

[0236] The susceptor 14 has a center C2. The susceptor 14 includes an inner region 50 and an outer region 52. The outer region 52 surrounds the inner region 50. When the wafer W is placed on the susceptor 14, the outer region 52 surrounds the wafer W.

[0237] The outer region 52 includes a first member 56 and a second member 58. The second member 58 is placed on the first member 56. The second member 58 is in the shape of a circular ring.

[0238] An outer peripheral fixing portion 56a protruding upward is provided at the outer peripheral end of the first component 56. The outer peripheral fixing portion 56a surrounds the second component 58. The second component 58 placed on the first component 56 is fixed in the lateral direction by the outer peripheral fixing portion 56a. The second component 58 and the first component 56 can be separated. In addition, a structure in which the upper portion of the second component 58 extends toward the first component 56 side and the upper portion extending toward the outside of the second component is placed on the first component 56 may be adopted.

[0239] The boundary between the first member 56 and the second member 58 is located, for example, below the upper surface of the wafer W. Therefore, when the wafer W is displaced outward by D1, a portion of the wafer W contacts a portion of the second member 58 .

[0240] The first component 56 and the second component 58 are formed of different materials. The first component 56 contains carbon (C). The second component 58 contains silicon carbide. At least the surface of the second component 58 contains silicon carbide. The second component 58 is, for example, polycrystalline silicon carbide. The second component 58 is, for example, 3C-SiC.

[0241] When a film is formed on the wafer W, byproducts are formed on the upper surface 52s of the outer region 52. Since the second member 58 can be separated from the first member 56, the susceptor 14 can be easily cleaned.

[0242] Consider a case where the byproduct formed on the upper surface 52s of the outer region 52 is peeled off from the upper surface 52s due to the application of stress caused by the temperature change of the susceptor 14. If the byproduct is peeled off, the dust in the reaction chamber 10 increases, and the film quality of the formed film is likely to be reduced. In addition, due to the byproduct formed on the upper surface 52s of the outer region 52, a large stress is generated on the susceptor 14, and the susceptor 14 may be warped. If the susceptor 14 is warped, the temperature distribution of the wafer W becomes worse, and the uniformity of the film quality of the formed film is likely to be reduced.

[0243] For example, in the case of forming a silicon carbide film, the main component of the byproduct formed on the upper surface 52s is silicon carbide. The surface of the second component 58 contains silicon carbide, so that the thermal expansion coefficient of the second component 58 and the byproduct is close. Therefore, the peeling of the byproduct from the upper surface 52s is suppressed, and the film quality of the formed film is easily improved. In addition, the warping of the base 14 caused by the byproduct is also suppressed, and the uniformity of the film quality of the formed film is easily improved.

[0244] Fig.35 and Fig.36 It is an enlarged schematic cross-sectional view of a stent according to a fourth embodiment. Fig.35 and Fig.36 It is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52 . Fig.35 This indicates a state where any end of the wafer W is shifted inward, that is, to the left in the figure, by D1. Fig.36 This shows a state where an arbitrary end portion of the wafer W is shifted outward, that is, rightward, by an amount D1.

[0245] In the susceptor 14 of the fourth embodiment, even when the wafer W is offset relative to the susceptor 14, the end Ex of the film quality assurance region Wa is always located above the support portion 54. Therefore, heat exchange between the support portion 54 and the vicinity of the end Ex of the film quality assurance region Wa is promoted. As a result, the uniformity of the film quality within the surface of the wafer W is improved.

[0246] In such Fig.36 As shown, when any end of the wafer W is shifted outward by D1 , the wafer W contacts the second member 58 .

[0247] The first member 56 and the second member 58 are formed of different materials. Therefore, the boundary between the first member 56 and the second member 58 becomes a thermal resistance. Therefore, when the second member 58 is heated by the second heater 42 and becomes high temperature, the heat inflow from the second member 58 to the first member 56 is suppressed. Therefore, for example, compared with the case where the first member 56 and the second member 58 are formed of the same material, the second member 58 is likely to become high temperature. Therefore, by utilizing the heat flowing from the portion of the wafer W that contacts the second member 58, the vicinity of the end Ex of the film quality assurance region Wa is likely to become high temperature around the portion of the wafer W that contacts the second member 58.

[0248] In the susceptor 14 of the fourth embodiment, heat can be easily discharged from the portion of the wafer W in contact with the second member 58 to the support portion 54 in contact with the back surface of the wafer W via the wafer W. Therefore, around the portion of the wafer W in contact with the second member 58, it is easy to suppress the vicinity of the end Ex of the film quality assurance region Wa from becoming high temperature.

[0249] As described above, according to the vapor phase growth apparatus of the fourth embodiment, the uniformity of the temperature of the substrate can be improved, similarly to the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.

[0250] (Fifth Embodiment)

[0251] The vapor phase growth device of the fifth embodiment is different from the vapor phase growth device of the fourth embodiment in that an inner peripheral fixing portion protruding upward is provided at the inner peripheral end of the first component in the outer region of the holder.

[0252] Fig.37 is a schematic diagram of a stent according to a fifth embodiment. Fig.37 (a) is a top view, Fig.37 (b) is Fig.37 FF' cross-sectional view of (a).

[0253] Fig.38 and Fig.39 It is an enlarged schematic cross-sectional view of the stent according to the fifth embodiment. Fig.38 and Fig.39 It is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52 . Fig.38 Indicates the state where no wafer W is placed. Fig.39 The state where the wafer W is placed is shown.

[0254] The susceptor 14 has a center C2. The susceptor 14 includes an inner region 50 and an outer region 52. The outer region 52 surrounds the inner region 50. When the wafer W is placed on the susceptor 14, the outer region 52 surrounds the wafer W.

[0255] The outer region 52 includes a first member 56 and a second member 58. The second member 58 is placed on the first member 56. The second member 58 is in the shape of a circular ring.

[0256] An outer peripheral fixing portion 56 a protruding upward is provided at an outer peripheral end of the first member 56 . The outer peripheral fixing portion 56 a surrounds the second member 58 .

[0257] In addition, an inner peripheral fixing portion 56b protruding upward is provided at the inner peripheral end of the first member 56. The second member 58 surrounds the inner peripheral fixing portion 56b.

[0258] The second member 58 placed on the first member 56 is fixed in the lateral direction by the inner peripheral fixing portion 56b and the outer peripheral fixing portion 56a. The second member 58 is separable from the first member 56. Alternatively, the upper portion of the second member 58 may extend toward the outer peripheral fixing portion 56a, and the upper portion of the second member 58 extending toward the outside may be placed on the outer peripheral fixing portion 56a.

[0259] In the susceptor 14 of the fifth embodiment, even when any end of the wafer W is offset outward by D1, the wafer W does not directly contact the second member 58. Therefore, even when the second member 58 is heated by the second heater 42 to a high temperature, it is possible to suppress the inflow of heat from the second member 58 to the wafer W. Therefore, compared with the case of using the susceptor 14 of the fourth embodiment, the temperature uniformity of the wafer W can be maintained.

[0260] As described above, according to the vapor phase growth apparatus of the fifth embodiment, the uniformity of the temperature of the substrate can be improved, similarly to the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.

[0261] (Sixth Embodiment)

[0262] The vapor phase growth apparatus of the sixth embodiment differs from the vapor phase growth apparatus of the fourth embodiment in that the holder has a base portion and a detachable attachment portion on the base portion.

[0263] Fig.40 is a schematic diagram of a stent according to a sixth embodiment. Fig.40 (a) is a top view, Fig.40 (b) is Fig.40 (a) GG' cross-sectional view.

[0264] The susceptor 14 has a center C2. The susceptor 14 includes an inner region 50 and an outer region 52. The outer region 52 surrounds the inner region 50. When the wafer W is placed on the susceptor 14, the outer region 52 surrounds the wafer W.

[0265] The base 14 includes a base portion 60 and a detachable portion 62. The detachable portion 62 is provided on the base portion 60. The detachable portion 62 is detachable from the base portion 60.

[0266] A portion of the inner region 50 and a portion of the outer region 52 are included in the base portion 60 . Another portion of the inner region 50 is included in the attachment / detachment portion 62 .

[0267] The base portion 60 and the detachable portion 62 are formed of, for example, the same material. Alternatively, the base portion 60 and the detachable portion 62 are formed of, for example, different materials.

[0268] The outer region 52 includes a first member 56 and a second member 58. A portion of the second member 58 is placed on a base portion 60. Another portion of the second member 58 is placed on a mounting and detaching portion 62. The second member 58 has a ring shape.

[0269] The base 14 of the sixth embodiment includes the detachable portion 62 that can be separated from the base portion 60 , thereby facilitating maintenance.

[0270] As described above, according to the vapor phase growth apparatus of the sixth embodiment, the uniformity of the temperature of the substrate can be improved, similarly to the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.

[0271] (Seventh Embodiment)

[0272] The vapor phase growth device of the seventh embodiment is different from the vapor phase growth device of the first embodiment in that the substrate has an orientation plane, the support portion has a straight line portion along the orientation plane when the substrate is placed on the support, and the inner peripheral end of the outer region opposite to the straight line portion is a straight line shape. Hereinafter, a part of the description of the contents repeated in the first embodiment is omitted.

[0273] Fig.41 is a schematic diagram of a stent according to a seventh embodiment. Fig.41 (a) is a top view, Fig.41 (b) is Fig.41 (a) HH' cross-sectional view.

[0274] Fig.42 is a schematic diagram of a stent according to a seventh embodiment. Fig.42 (a) is related to Fig.41 (a) corresponds to the top view, Fig.42 (b) is related to Fig.41 (b) The corresponding cross-sectional view.

[0275] Fig.42 1 is a diagram showing a state where a wafer W is placed on the susceptor 14. Fig.42 , a situation where the center C1 of the wafer W coincides with the center C2 of the susceptor 14 is shown.

[0276] The wafer W has an orientation flat OF. The orientation flat OF is a straight line portion provided on the outer periphery of the wafer W in order to indicate the crystal orientation of the wafer W.

[0277] The susceptor 14 includes an inner region 50 and an outer region 52. The outer region 52 surrounds the inner region 50. When the wafer W is placed on the susceptor 14, the outer region 52 surrounds the wafer W.

[0278] The inner region 50 is in the shape of a disk, and the outer region 52 is in the shape of a ring.

[0279] An annular support portion 54 is provided on the inner region 50. The annular support portion 54 includes an arc portion 54a and a straight portion 54b.

[0280] The support portion 54 can support the lower surface of the wafer W when the wafer W is placed on the susceptor 14. The straight portion 54b is along the orientation plane OF when the wafer W is placed on the susceptor 14. The straight portion 54b supports the lower surface of the wafer W along the orientation plane OF.

[0281] A portion 52b of the inner peripheral end of the outer region 52 facing the straight portion 54b of the support portion 54 is in a straight line shape. When the wafer W is placed on the susceptor 14, the portion 52b of the inner peripheral end of the outer region 52 is along the orientation plane OF.

[0282] The width of the arc portion 54a of the support portion 54 ( Fig.41 The width of the straight portion 54b of the support portion 54 is ( Fig.41 For example, w2) in (a) is equal.

[0283] The distance between the straight portion 54b and a portion 52b of the inner peripheral end of the outer region 52 that faces the straight portion 54b ( Fig.41 X2) in (b) is, for example, the distance ( Fig.41 are equal to X1) in (b).

[0284] In addition, the distance ( Fig.42 D1 in (b) is, for example, equal to the distance ( Fig.42 D2 in (b).

[0285] According to the susceptor 14 of the seventh embodiment, even in the case where the wafer W has the orientation flat OF, the uniformity of the temperature of the wafer W can be maintained.

[0286] As described above, according to the vapor phase growth apparatus of the seventh embodiment, the uniformity of the temperature of the substrate can be improved, similarly to the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.

[0287] (Eighth Embodiment)

[0288] The difference between the vapor phase growth device of the eighth embodiment and the vapor phase growth device of the seventh embodiment is that the distance between the outer peripheral end of the straight portion and the inner peripheral end of the outer region is greater than the distance between the outer peripheral end of the arc portion and the inner peripheral end of the outer region. Hereinafter, a part of the description of the contents repeated in the first embodiment and the seventh embodiment is omitted.

[0289] Fig.43 is a schematic diagram of a stent according to an eighth embodiment. Fig.43 (a) is a top view, Fig.43 (b) is Fig.43 (a) II' cross-sectional view.

[0290] The distance between the straight portion 54b and a portion 52b of the inner peripheral end of the outer region 52 that faces the straight portion 54b ( Fig.43 X2) in (b) is, for example, greater than the distance ( Fig.43 The distance X2 is, for example, 1.2 times or more and 3 times or less of the distance X1. The distance between the outer peripheral end of the support portion 54 and the inner peripheral end of the outer region 52 is greater in the straight portion 54b than in the arc portion 54a.

[0291] Fig.44 It is an explanatory diagram of the function and effect of the eighth embodiment. Fig.44 is a schematic diagram of a stent according to a seventh embodiment. Fig.44 It is a top view.

[0292] The base 14 of the seventh embodiment is different from the base 14 of the eighth embodiment in that the distance ( Fig.41 X2 in (b) is equal to the distance between the arc portion 54a and another portion 52a of the inner peripheral end of the outer region 52 opposite to the arc portion 54a ( Fig.41 X1 in (b).

[0293] like Fig.44 As shown in FIG. 1 , when the wafer W rotates relative to the susceptor 14, the wafer W may be clamped and fixed between the inner peripheral ends of the outer region 52. In such a case, for example, after a film is formed on the wafer W, if the temperature of the reaction chamber 10 decreases, the wafer W is subjected to compressive stress due to the difference in thermal expansion coefficients between the wafer W and the outer region 52, and the wafer W may be cracked.

[0294] Fig.45 It is an explanatory diagram of the function and effect of the eighth embodiment. Fig.45 is a schematic diagram of a stent according to an eighth embodiment. Fig.45 It is a top view.

[0295] Fig.45 1 shows a state in which the wafer W mounted on the susceptor 14 of the eighth embodiment rotates relative to the susceptor 14. In the susceptor 14 of the eighth embodiment, the distance ( Fig.43 X2 in (b) is greater than the distance ( Fig.43 Therefore, it is possible to prevent the wafer W from being sandwiched and fixed between the inner peripheral ends of the outer region 52. Thus, compressive stress is applied to the wafer W, and cracking of the wafer W is prevented.

[0296] The distance X2 is preferably 1.2 times or more and 2 times or less of the distance X1. By setting the distance X2 to be 1.2 times or more of the distance X1, the wafer W is prevented from being sandwiched between the inner peripheral ends of the outer region 52 and fixed. In addition, by setting the distance X2 to be 2 times or less of the distance X1, the process gas can be prevented from spreading to the back side of the wafer W and the byproducts can be prevented from being attached to the back side of the wafer W.

[0297] As described above, according to the vapor phase growth apparatus of the eighth embodiment, the uniformity of the temperature of the substrate can be improved, similarly to the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.

[0298] The embodiments of the present invention have been described above with reference to specific examples. The embodiments are listed only as examples and do not limit the present invention. In addition, the constituent elements of each embodiment may be appropriately combined.

[0299] In the embodiments, the case of forming a single-crystal silicon carbide film is described as an example, but the present invention can also be applied to the formation of a polycrystalline or amorphous silicon carbide film. In addition, the present invention can also be applied to the formation of films other than silicon carbide films with high film formation temperatures.

[0300] Furthermore, in the embodiment, a single-crystal silicon carbide wafer is described as an example of a substrate, but the substrate is not limited to a single-crystal silicon carbide wafer.

[0301] In the embodiments, the description of the device structure, manufacturing method, etc. that are not directly required in the description of the present invention is omitted, but the required device structure, manufacturing method, etc. can be appropriately selected and used. In addition, all vapor phase growth devices that have the elements of the present invention and can be appropriately designed and modified by those skilled in the art are included in the scope of the present invention. The scope of the present invention is defined by the scope of the claims and their equivalents.

Claims

1. A vapor phase growth device, characterized in that: have: Reaction chamber; A support, disposed in the reaction chamber and carrying a substrate; a first heater, disposed in the reaction chamber and below the support; and A second heater is disposed in the reaction chamber and above the support, and the second heater heats the substrate from above. The support comprises: an inner region; an annular outer region surrounding the inner region and surrounding the substrate when the substrate is placed thereon; and a support portion disposed on the inner region and capable of supporting the lower surface of the substrate, which is annular and has an arc portion. The distance between the outer circumferential end of the arc portion and the inner circumferential end of the outer area is less than 6 mm, The width of the support portion is 3 mm or more, When the substrate is placed on the holder so that the center of the substrate coincides with the center of the holder, If the radius of the substrate is defined as R1, The radius of the outer peripheral end of the arc portion is defined as R4, The distance between the outer peripheral end of the substrate and the inner peripheral end of the outer region facing the arc portion is defined as D1. Then the following formula 1 is satisfied: R1-D1>R4, If the radius of the film quality assurance area of ​​the substrate is defined as R2, The radius of the inner circumference of the arc portion is defined as R3. Then the bracket satisfies the following formula 2 and formula 3: Formula 2: R2-D1>R3, Formula 3: R2+D1<R4.

2. The vapor phase growth device according to claim 1, characterized in that: The outer region includes: a first component including carbon; and a second component disposed on the first component, separable from the first component and having at least a surface including silicon carbide.

3. The vapor phase growth device according to claim 2, characterized in that: A boundary between the first member and the second member is located below an upper surface of the substrate placed on the holder.

4. The vapor phase growth device according to claim 2, characterized in that: The second component is composed of silicon carbide.

5. The vapor phase growth device according to claim 2, characterized in that: The first member has an outer peripheral fixing portion that protrudes upward from an outer peripheral end of the first member and surrounds the second member.

6. The vapor phase growth device according to claim 5, characterized in that: The first member has an inner peripheral fixing portion that protrudes upward from an inner peripheral end of the first member and is surrounded by the second member.

7. The vapor phase growth device according to claim 1, characterized in that: The bracket has a plurality of protrusions on the inner peripheral side of the outer region.

8. The vapor phase growth device according to claim 1, characterized in that: The substrate has an orientation plane, The support portion has a straight line portion along the orientation plane when the substrate is placed on the support, An inner peripheral end of the outer region facing the straight portion is in a straight line shape.

9. The vapor phase growth device according to claim 8, characterized in that: A distance between an outer peripheral end of the straight portion and an inner peripheral end of the outer region is greater than a distance between an outer peripheral end of the arc portion and an inner peripheral end of the outer region.

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