Plasma-resistant semiconductor component and forming method, plasma reaction device
By forming a dense layer on the inner wall of the through-hole of semiconductor components and combining corrosion-resistant coatings of materials such as rare earth element oxides, the problem of coating peeling in plasma etching process is solved, particle pollution is reduced, and etching quality is improved .
Patent Information
- Application Number
- CN202011167677.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-10-27
- Publication Date
- 2024-12-13
- Estimated Expiration
- 2040-10-27
AI Technical Summary
In plasma etching process, the surface coating of semiconductor components is prone to fall off, resulting in contamination of tiny particles and affecting the etching quality. Especially the number of particles at sizes of 45nm and below is strictly required.
Using a combination structure of corrosion-resistant coating and dense layer, a dense layer is formed by forming a dense layer on the inner wall of the through-hole of semiconductor components, and a physical vapor deposition method or chemical vapor deposition method of rare earth element oxides, fluorides and other materials is used to form a corrosion-resistant coating. The layer is formed through the through holes by local heating treatment, thereby enhancing the bonding force with the substrate.
It effectively reduces the impact of plasma corrosion on semiconductor components, reduces the risk of particle pollution, and improves the accuracy and product quality of plasma etching.
Smart Images
Figure CN114496690B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a plasma-resistant semiconductor component and a forming method, and a plasma reaction device. Background Art
[0002] In a typical plasma etching process, process gases (such as CF4, O2, etc.) form plasma under the action of radio frequency (RF). After passing through the electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, these plasmas physically bombard and chemically react with the wafer surface, thereby etching the wafer into a specific structure and completing the etching process.
[0003] However, during the plasma etching process, physical bombardment and chemical reactions will also act on the inside of the etching chamber and all parts in contact with the plasma, causing corrosion. For example, gas delivery and distribution devices, such as shower heads, nozzles, bushings, electrostatic chucks, etc. After these devices deliver process gases to the reaction chamber to form plasma, their connections will also be corroded by the plasma. Long-term exposure to the plasma corrosion environment will damage the surface structure, causing the precipitation of bulk components, detaching from the surface to form tiny particles, and contaminating the wafer.
[0004] With the further development of semiconductor manufacturing process, more stringent requirements are put forward for tiny particles. For example, the number of particles larger than 45nm is 0, and the ground contact rate is less than 10. Therefore, reducing the formation of tiny particle pollution sources at the gas distribution device will be of great significance for improving the plasma etching level. Summary of the invention
[0005] The first object of the present invention is to provide a method for forming a semiconductor component resistant to plasma corrosion, so as to solve the problem that the surface coating of the semiconductor component is easy to fall off in a plasma environment and reduce particle contamination.
[0006] In order to achieve the above-mentioned object, the technical solution provided by the present invention is: a method for forming a semiconductor component resistant to plasma corrosion, comprising:
[0007] Providing a first substrate having a first through hole therein;
[0008] forming a second substrate in the first through hole;
[0009] forming a corrosion-resistant coating on the surface of the second substrate, wherein the corrosion-resistant coating is exposed to a plasma environment;
[0010] The corrosion-resistant coating and the second substrate are locally heated to form a second through hole penetrating the corrosion-resistant coating and the second substrate, and a dense layer is formed on the inner side wall of the second through hole.
[0011] Optionally, the second substrate is located only in the first through hole, and the corrosion-resistant coating is located on the surfaces of the first substrate and the second substrate.
[0012] Optionally, the second substrate is located in the first through hole and on the surface of the first substrate, and the corrosion-resistant coating is located on the surface of the second substrate.
[0013] Optionally, the surface of the second substrate has a positioning feature structure, and the positioning feature structure includes a pin hole and a concave-convex structure, etc., which is used to position the second through hole before the local heating treatment.
[0014] Optionally, the diameter of the first through hole is greater than the diameter of the second through hole.
[0015] Optionally, the local heating treatment includes one or more of pulsed laser heating or pulsed electron beam heating.
[0016] Optionally, the energy density of the pulsed laser heating is 100 W / mm 2 ~5000W / mm 2 The energy density of the pulse electron beam heating is 100W / mm 2 ~5000W / mm 2 .
[0017] Optionally, the dense layer is a crystalline structure.
[0018] Optionally, the material of the corrosion-resistant coating includes: at least one of oxides, fluorides or fluoride oxides of rare earth elements; the formation process of the corrosion-resistant coating is at least one of physical vapor deposition, chemical vapor deposition or atomic layer deposition.
[0019] Optionally, the material of the second substrate is a plasma-resistant material; and the process for forming the second substrate is a spraying process or a hot pressing sintering process.
[0020] Optionally, the density of the corrosion-resistant coating is 95% to 100%.
[0021] Optionally, the density of the second substrate is 85% to 100%.
[0022] Optionally, the density of the dense layer is 98% to 100%.
[0023] Optionally, the second substrate is located only in the first through hole, and the corrosion-resistant coating is located on the surfaces of the first substrate and the second substrate.
[0024] Optionally, the second substrate is located on the surface of the first substrate and in the first through hole, and the corrosion-resistant coating is located on the surface of the second substrate.
[0025] Optionally, a ratio of the depth to the width of the second through hole is in a range of 1:1 to 100:1.
[0026] Optionally, when the second through hole is a circular structure, the aperture range of the second through hole is 0.01 mm to 2 mm.
[0027] Optionally, the corrosion-resistant coating includes at least one of the rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.
[0028] Optionally, the corrosion-resistant coating includes at least one of oxides, fluorides or oxyfluorides of rare earth elements.
[0029] Accordingly, a semiconductor component is provided, comprising:
[0030] A first substrate having a first through hole therein;
[0031] A second substrate, located in the first through hole;
[0032] A corrosion-resistant coating, located on the surface of the second substrate;
[0033] a second through hole, penetrating the second substrate and the corrosion-resistant coating;
[0034] The dense layer is located on the inner side wall of the second through hole.
[0035] Accordingly, a plasma reaction device is provided, comprising:
[0036] A reaction chamber, wherein the interior of the chamber is a plasma environment;
[0037] The semiconductor component, the corrosion-resistant coating is exposed to the plasma environment.
[0038] Optionally, the plasma includes at least one of F-containing plasma, Cl-containing plasma, H-containing plasma or O-containing plasma.
[0039] Optionally, the plasma reaction device is a plasma etching device or a plasma cleaning device.
[0040] Optionally, the plasma etching device is a capacitively coupled plasma reaction device, and the semiconductor component includes at least one of a shower head or an electrostatic chuck.
[0041] Optionally, the plasma etching device is an inductively coupled plasma reaction device, and the semiconductor component includes at least one of a gas nozzle, a bushing or an electrostatic chuck.
[0042] Compared with the prior art, the present invention has the following beneficial effects:
[0043] In the method for forming a semiconductor component provided by the present invention, a first through hole is provided in the first substrate, the first through hole is used to accommodate a second substrate, the second substrate and the first substrate are provided with a corrosion-resistant coating, and a part of the corrosion-resistant coating and the second substrate are melted by local heating to form a second through hole that penetrates the second substrate and the corrosion-resistant coating, and at the same time, a dense layer is formed on the inner side wall of the second through hole, and the dense layer also has good corrosion resistance, so the dense layer can resist plasma corrosion, and at the same time, the dense layer is formed by heating and melting the second substrate and the corrosion-resistant coating, so the bonding force between the dense layer and the second substrate and the corrosion-resistant coating is strong, so the dense layer is not easily bombarded by plasma to form particle pollution, which is beneficial to reduce particle pollution. BRIEF DESCRIPTION OF THE DRAWINGS
[0044] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.
[0045] Figure 1 is a schematic diagram of a plasma reaction device according to an embodiment of the present invention;
[0046] Figure 2 It is a schematic diagram of the structure of a semiconductor component according to the first embodiment of the present invention;
[0047] Figure 3 It is a schematic diagram of the structure of a semiconductor component according to a second embodiment of the present invention;
[0048] Figure 4 is a flow chart of a method for forming a semiconductor component according to an embodiment of the present invention;
[0049] Figure 5 is a schematic diagram of the first substrate structure of an embodiment of the present invention;
[0050] Figure 6 is a schematic diagram of the structure of the first substrate and the second substrate according to an embodiment of the present invention;
[0051] Figure 7 is a schematic diagram of the structure of the corrosion-resistant coating according to an embodiment of the present invention;
[0052] Figure 8 It is a schematic diagram of the dense layer structure of an embodiment of the present invention.
[0053] Reference numerals:
[0054] 100-reaction chamber; 101-base; 102-shower head; 103-electrostatic chuck;
[0055] 201-first substrate; 202-second substrate;
[0056] 300-corrosion-resistant coating; 400-first through hole; 500-second through hole; 600-dense layer;
[0057] W-wafer. DETAILED DESCRIPTION
[0058] In order to solve the above technical problems, an embodiment of the present invention proposes a method for forming a semiconductor component resistant to plasma corrosion, an embodiment of a semiconductor component obtained by the method, and an embodiment of a plasma reaction device including such a semiconductor component.
[0059] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0060] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.
[0061] It should also be noted that when an element is referred to as being "fixed on" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element at the same time. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.
[0062] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.
[0063] Figure 1 It is a structural schematic diagram of a plasma reaction device of the present invention.
[0064] Please refer to Figure 1 The plasma reaction device includes: a reaction chamber 100, the reaction chamber 100 is a plasma environment, and the semiconductor components and the inner wall of the reaction chamber 100 are exposed to the plasma environment.
[0065] The plasma reaction device further includes: a base 101, the base 101 is used to carry the substrate W to be processed, and the plasma is used to process the substrate W to be processed. Since plasma is highly corrosive, in order to prevent the surface of semiconductor components from being corroded by plasma, it is necessary to coat the surface of the semiconductor components with a corrosion-resistant coating.
[0066] In this embodiment, the plasma reaction device is a capacitively coupled plasma reaction device. Accordingly, the semiconductor components exposed to the plasma environment include: a shower head 102 and an electrostatic chuck 103 .
[0067] In other embodiments, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the semiconductor component exposed to the plasma environment includes: at least one of a bushing and a gas nozzle.
[0068] During the plasma etching process, physical bombardment and chemical reactions will also act on all semiconductor components in contact with the plasma inside the etching chamber, causing corrosion to the semiconductor components. Long-term exposure to the plasma corrosion environment will damage the surface structure, causing the precipitation of bulk components, which will separate from the surface to form tiny particles and contaminate the wafer. Advanced semiconductor manufacturing has strict requirements for tiny particle contamination, such as the number of particles larger than 45nm is 0, and the ground contact rate is less than 10.
[0069] Therefore, it is necessary to coat the surface of the semiconductor components in the plasma reaction device with a corrosion-resistant coating to resist the corrosion of the plasma. For semiconductor components with holes exposed to the plasma environment, since the holes of the semiconductor components will also be exposed to the plasma, it is also necessary to form a corrosion-resistant coating on the inner wall of the hole to prevent the plasma from damaging the semiconductor components on the inner wall of the hole.
[0070] The surface of the semiconductor parts in the plasma reaction device of this embodiment has a plasma-resistant coating, and the growth direction of the grains of the plasma-resistant coating is parallel to the normal direction of its contact surface. Therefore, the plasma-resistant coating has a strong bonding force with its contact surface and is not easy to fall off. In addition, there is a dense layer on the surface of the inner wall of the hole, and the dense layer is formed by melting the materials of the second substrate and the corrosion-resistant coating. Therefore, the bonding force between the dense layer and the second substrate and the plasma-resistant coating is strong. The semiconductor parts are placed in a plasma environment, which is not easy to be corroded by plasma, and the risk of being bombarded by plasma to form particles can be reduced. The problem of weak bonding between the corrosion-resistant coating formed on the inner wall of the hole and the substrate in the prior art is avoided, and the problem of the internal coating of the hole of the semiconductor parts being continuously subjected to the physical bombardment and chemical reaction of the plasma, gradually falling off from the workpiece, forming tiny particles, and scattering inside the chamber is avoided.
[0071] The following is a detailed description of semiconductor components:
[0072] Figure 2 A schematic diagram of a semiconductor component embodiment provided by the present invention.
[0073] Please refer to Figure 2 This embodiment specifically includes a first substrate 201 and a second substrate 202, wherein the first substrate 201 has a first through hole 400 penetrating therein, and the second substrate 202 is located in the first through hole 400 and on the surface of the first substrate 201; a corrosion-resistant coating 300 is provided on the surface of the second substrate 202; and also includes a second through hole 500, which penetrates the second substrate 202 and the corrosion-resistant coating 300, and a dense layer 600 is also provided on the inner side wall of the second through hole 500.
[0074] The surface of the second substrate 202 has a corrosion-resistant coating 300, which is formed by a physical vapor deposition process, and in the process of formation, the growth direction of the grains of the corrosion-resistant coating 300 is consistent with the normal direction of the contact surface, so the corrosion-resistant coating 300 has a strong bonding force with the contact surface and is not easy to fall off and form particle pollution under the bombardment of plasma. In addition, the density of the corrosion-resistant coating 300 is 95% to 100%, that is, the corrosion-resistant coating 300 has a dense structure, so the corrosion-resistant coating 300 can better protect the surface of the second substrate 202 and prevent the surface of the second substrate 202 from being corroded by plasma.
[0075] At the same time, a dense layer 600 is provided on the surface of the inner wall of the second through hole 500, and the density of the dense layer 600 is 98% to 100%, that is, the dense layer also has a dense structure, so that the dense layer 600 has a strong ability to resist plasma corrosion, and the dense layer can better protect the surface of the second substrate 202, and prevent the second substrate 202 from being bombarded and forming particle pollution. In addition, the dense layer 600 is formed by heating and melting the corrosion-resistant coating 300 and the second substrate 202, so the dense layer 600 has a strong bonding force with the corrosion-resistant coating 300 and the second substrate 202, instead of forming a corrosion-resistant layer on the inner wall of the hole of the semiconductor component through a physical vapor deposition process, avoiding the problem of weak bonding force between the corrosion-resistant layer and the inner wall of the hole caused by the growth direction of the corrosion-resistant layer formed in the hole deviating from the normal direction of the inner wall of the hole, and the dense layer of the present invention is not easy to fall off, avoiding particle pollution to the reaction chamber environment.
[0076] In this embodiment, the second substrate 202 is subsequently required as a raw material for forming the dense layer 600, so the dense layer 600 also has corrosion resistance. The density of the second substrate 202 is 85% to 99%. Specifically, the second substrate 202 adopts a plasma-resistant coating, and its density is 85% to 99%, or the second substrate 202 adopts a corrosion-resistant ceramic, and its density is 90% to 96%. Since the second substrate 202 is not directly exposed to the plasma environment, the corrosion resistance requirement of the second substrate 202 is slightly lower than that of the corrosion-resistant coating 300 and the dense layer 600. And the density of the dense layer 600 is greater than the density of the second substrate 202 and the corrosion-resistant coating 300, because the dense layer 600 is prepared by heating and melting, and its process is compared with spraying and physical vapor deposition, and the obtained dense layer has a higher density.
[0077] In this embodiment, the ratio of the depth to the width of the second through hole 500 is in the range of 1:1 to 100:1.
[0078] In this embodiment, the second through hole 500 is a circular structure, and its aperture range is 0.01 mm to 2 mm.
[0079] In this embodiment, the diameter of the first through hole 400 is greater than the diameter of the second through hole 500 .
[0080] In this embodiment, the corrosion-resistant coating 300 includes at least one of the rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu, and at least one of the oxides, fluorides or fluoride oxides of the above rare earth elements. The corrosion-resistant coating prepared by these rare earth elements has plasma resistance and will not bring in other metal pollution.
[0081] In this embodiment, the second substrate 202 is located on the surface of the first substrate 201 and in the first through hole 400 of the first substrate 201, and the corrosion-resistant coating 300 is located on the surface of the second substrate 202. In this structure, the first substrate 201 can support the second substrate 202, and can prevent the interface between the second substrate 202 and the first substrate 201 from being separated or even falling off due to the accumulation of thermal stress when the corrosion-resistant coating 300 and the second substrate 202 are subsequently subjected to local heating treatment.
[0082] In another embodiment, if Figure 3 As shown, the second substrate 202 is only located in the first through hole 400, and the corrosion-resistant coating 300 is located on the surfaces of the first substrate 201 and the second substrate 202. The second substrate 202 is only located in the first through hole 400, which can save materials and reduce costs.
[0083] Figure 4 The present invention is a flowchart of a method for forming a semiconductor component resistant to plasma corrosion according to an embodiment of the present invention.
[0084] Please refer to Figure 4 Step S1: providing a first substrate, wherein the first substrate has a first through hole extending therethrough; step S2: forming a second substrate in the first through hole; step S3: forming a corrosion-resistant coating on the first substrate and the second substrate; step S4: locally heating the corrosion-resistant coating and the second substrate to form a second through hole extending therethrough and forming a dense layer on the inner side wall of the second through hole.
[0085] The following is a detailed introduction to the formation method of semiconductor components:
[0086] Figures 5 to 8 It is a structural schematic diagram of each step of a semiconductor component forming method of the present invention.
[0087] Please refer to Figure 5 The first substrate 201 has a first through hole 400 therein.
[0088] In one embodiment, the material of the first substrate 201 is a metal substrate, and the first substrate 201 provides a cavity structure support function. The material of the first substrate 201 can also be consistent with that of the second substrate 202, both of which are corrosion-resistant ceramics. In this case, the first substrate 201 and the second substrate 202 are an integral structure, so there is no interface between the first substrate 201 and the second substrate 202. Compared with the first substrate 201 and the second substrate 202 of different materials, the first substrate 201 and the second substrate 202 of the same material are an integral structure of the same material, so there is no problem of interface bonding failure.
[0089] Please refer to Figure 6 , a second substrate 202 is formed in the first through hole 400 .
[0090] In this embodiment, the material of the second substrate 202 is a corrosion-resistant material. Since the second substrate 202 is subsequently used as a raw material for forming the dense layer 600, it has corrosion resistance. Specifically, it can be a plasma corrosion-resistant ceramic or coating, which can form a dense structure after melting. The process of forming the second substrate 202 is a spraying process or a hot pressing sintering process, and the second substrate 202 is combined with the first substrate 201.
[0091] In this embodiment, the second substrate 202 is not only located in the first through hole 400 but also located on the surface of the first substrate 201 .
[0092] In other embodiments, the second substrate 202 may be located only in the first through hole 400 .
[0093] In an embodiment where the second substrate 202 is located in the first through hole 400 and on the surface of the first substrate 201, the first substrate 201 can support the second substrate 202 so that the contact area between the second substrate 202 and the first substrate 201 includes not only the inner wall of the first through hole 400, but also the surface of the first substrate 201, so that the bonding force between the first substrate 201 and the second substrate 202 is stronger.
[0094] The surface of the second substrate 202 has positioning feature structures, which include pin holes, concave-convex and buckling structures, etc., and are used to position the second through hole 500 before the local heating process.
[0095] Please refer to Figure 7 , a corrosion-resistant coating 300 is formed on the second substrate 202 and the first substrate.
[0096] In this embodiment, the corrosion-resistant coating 300 includes at least one of the rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu, and at least one of the oxides, fluorides or fluoride oxides of the above rare earth elements. The corrosion-resistant coating prepared by these rare earth elements has anti-plasma properties and will not bring in other metal pollution. The formation process of the corrosion-resistant coating 300 is at least one of physical vapor deposition, chemical vapor deposition or atomic layer deposition. The coatings obtained by these formation processes have a dense structure, are not easy to fall off, and have good corrosion resistance. The corrosion-resistant coating 300 has two functions, one is to resist the corrosion of plasma, and the other is to provide raw materials for the formation of the subsequent dense layer 600.
[0097] After the corrosion-resistant coating 300 is formed, the position of the positioning feature structure is transferred to the corrosion-resistant coating 300, and the position of the subsequent local heating treatment is determined by the positioning position transferred to the corrosion-resistant coating 300.
[0098] Please refer to Figure 8 The corrosion-resistant coating 300 and the second substrate 202 are locally heated to form a second through hole 500 penetrating the corrosion-resistant coating 300 and the second substrate 202, and a dense layer 600 is formed on the inner wall of the second through hole 500. In this embodiment, the corrosion-resistant coating 300 is formed by at least one of physical vapor deposition, chemical vapor deposition or atomic layer deposition, that is, the corrosion-resistant coating 300 is formed by gaseous molecules and atomic groups being transformed into a solid state through nucleation and growth, and has a dense feature; the process of the second substrate 202 is a spraying process or a hot pressing sintering process, that is, the second substrate 202 is a solid coating formed by solid particles undergoing an instantaneous liquid phase or high-temperature sintering process and grain shrinkage, and has a lower density feature than the corrosion-resistant coating 300, and the dense layer 600 is a process in which the coating 300 and the substrate 202 solid are locally heated and melted to be converted into a melt, and then cooled to be converted into a solid state. During the melting and cooling process, the tiny pores between the solid grains will be released. Therefore, the dense layer 600 formed on the side wall of the second through hole 500 has a higher density than the corrosion-resistant coating 300 and the substrate 202.
[0099] In the process of local heating to form the dense layer 600, in order to avoid the corrosion-resistant coating 300 and the substrate 202 from peeling off due to excessive local thermal expansion, the following measures can be taken: on the one hand, adjust the duty cycle of the pulse heating to ensure that the corrosion-resistant coating 300 and the substrate 202 have sufficient time to cool down and release local thermal stress; on the other hand, use refrigeration measures to assist cooling, such as using He, N2, dry ice, liquid nitrogen, etc. to perform local cooling to further release local thermal stress.
[0100] In this embodiment, the dense layer 600 has a stable crystalline structure, so that the performance of the dense layer 600 is relatively stable. When subjected to physical bombardment and chemical corrosion by plasma, the surface maintains a stable structure, and the etching chamber performance is not prone to drift.
[0101] The local heating process is: pulsed laser melting or pulsed electron beam melting, which locally melts the second substrate 202 and the surface corrosion-resistant coating 300 and rapidly cools them.
[0102] Pulse laser heating is used, and the energy density used is 100W / mm 2 ~5000W / mm 2 , using pulsed electron beam heating, the energy density used is 100W / mm 2 ~5000W / mm 2 .
[0103] By using pulsed laser or pulsed electron beam heating, three effects can be achieved: ① The second through hole 500 is formed by non-direct contact heating, which can avoid the metal contamination problem introduced by the machining drill bit; ② Due to the small action radius of the laser or electron beam, local melting can be effectively performed to form a dense through hole structure, which can maintain the dense characteristics of the inner wall of the characteristic hole of this embodiment, and has strong corrosion resistance, and can avoid the formation of tiny particles; ③ The pulse heating method performs local melting-cooling-melting-cooling processing on the second substrate 202 and the corrosion-resistant coating 300, which can avoid the shape failure of the corrosion-resistant coating 300 or the second substrate 202 caused by excessive accumulation of thermal expansion and deformation of the first substrate 201, thereby effectively protecting the precise structure of the characteristic through hole.
[0104] The corrosion-resistant coating and the second substrate material are melted by pulsed laser or pulsed electron beam heating. The corrosion-resistant coating and the second substrate change from solid to molten state. At this time, the material in the molten state is in a long-range disordered state. After cooling, the material in the molten state changes back into a long-range ordered solid dense layer. This dense layer obtained by a similar reconstruction process has the characteristics of high density.
[0105] In other embodiments, the structure of the second through hole 500 may also be at least one of a stepped hole, a segmented hole, and an inclined hole combination hole.
[0106] In summary, the surface of the porous structure of the semiconductor component provided by the embodiment of the present invention has a dense layer, which can reduce the metal pollution and tiny particle pollution caused by the corrosion of the porous structure of the semiconductor component by plasma, and improve the plasma etching level. The method for forming a semiconductor component resistant to plasma corrosion provided by the embodiment of the present invention can form a dense coating on the surface of the semiconductor component and the porous surface, and the obtained coating is not easy to fall off, reducing the risk of particle contamination. The semiconductor component in the plasma reaction device provided by the embodiment of the present invention has a corrosion-resistant coating, which can resist the corrosion of plasma, and the coating is not easy to fall off, reducing the particle contamination of the working environment in the reaction chamber, thereby improving the yield of the plasma reaction device product preparation.
[0107] The above description is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the inventive concept of the present invention, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present invention.
Claims
1. A method for forming a semiconductor component resistant to plasma corrosion, It is characterized in that include: Providing a first substrate having a first through hole therein; forming a second substrate in the first through hole, wherein the second substrate fills the first through hole; forming a corrosion-resistant coating on the surface of the second substrate by a physical vapor deposition process, wherein the corrosion-resistant coating is exposed to a plasma environment; The corrosion-resistant coating and the second substrate are locally heated to form a second through hole penetrating the corrosion-resistant coating and the second substrate, and a dense layer is formed on the inner wall of the second through hole, wherein the local heating treatment includes one or more of pulsed laser heating or pulsed electron beam heating, and the diameter of the first through hole is larger than the diameter of the second through hole.
2. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The second substrate is located only in the first through hole, and the corrosion-resistant coating is located on the surfaces of the first substrate and the second substrate.
3. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The second substrate is located in the first through hole and on the surface of the first substrate, and the corrosion-resistant coating is located on the surface of the second substrate.
4. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The surface of the second substrate has a positioning feature structure, and the positioning feature structure includes a pin hole and a concave-convex structure, which is used for positioning the second through hole before the local heating process.
5. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The energy density of the pulse laser heating is 100 W / mm 2 to 5000 W / mm 2 , and the energy density of the pulse electron beam heating is 100 W / mm 2 to 5000 W / mm 2 .
6. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The dense layer is a crystalline structure.
7. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The material of the corrosion-resistant coating includes: at least one of oxides, fluorides or oxyfluorides of rare earth elements; the formation process of the corrosion-resistant coating is at least one of physical vapor deposition, chemical vapor deposition or atomic layer deposition.
8. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The material of the second substrate is a plasma-resistant material; the process of forming the second substrate is a spraying process or a hot pressing sintering process.
9. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The density of the corrosion-resistant coating is 95% to 100%.
10. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The density of the second substrate is 85% to 100%.
11. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The density of the dense layer is 98% to 100%.
12. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The ratio of the depth to the width of the second through hole is in the range of 1:1 to 100:
1.
13. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that When the second through hole is a circular structure, the aperture range of the second through hole is 0.01 mm to 2 mm.
14. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The corrosion-resistant coating includes at least one of the rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.
15. The method for forming a semiconductor component resistant to plasma corrosion according to claim 1, It is characterized in that The corrosion-resistant coating includes at least one of oxides, fluorides or oxyfluorides of rare earth elements.
16. A semiconductor component manufactured by the method for forming a semiconductor component resistant to plasma corrosion according to any one of claims 1 to 15, It is characterized in that include: A first substrate having a first through hole therein; A second substrate, located in the first through hole; A corrosion-resistant coating, located on the surface of the second substrate; a second through hole, penetrating the second substrate and the corrosion-resistant coating; The dense layer is located on the inner side wall of the second through hole.
17. A plasma reaction device, It is characterized in that include: A reaction chamber, wherein the interior of the chamber is a plasma environment; The semiconductor component of claim 16, wherein the corrosion-resistant coating is exposed to the plasma environment.
18. A plasma reaction device according to claim 17, It is characterized in that The plasma includes at least one of F-containing plasma, Cl-containing plasma, H-containing plasma, or O-containing plasma.
19. The plasma reaction device according to claim 17, It is characterized in that The plasma reaction device is a plasma etching device or a plasma cleaning device.
20. A plasma reaction device according to claim 19, It is characterized in that The plasma etching device is a capacitively coupled plasma reaction device, and the semiconductor component includes at least one of a shower head or an electrostatic chuck.
21. A plasma reaction device according to claim 19, It is characterized in that The plasma etching device is an inductively coupled plasma reaction device, and the semiconductor component includes at least one of a gas nozzle, a bushing or an electrostatic chuck.