Method for manufacturing transistor with built-in bias resistor and transistor with built-in bias resistor

Abstract

The present disclosure relates to a manufacturing method of a bias resistor built-in transistor and a bias resistor built-in transistor, the manufacturing method comprising: providing an input terminal, a base, an emitter, a resistor set and a collector, the resistor set comprising at least two basic resistors; connecting one end of each of the basic resistors in the resistor set to the base; according to the resistance value requirement of the transistor built-in resistor, connecting the input terminal to at least one of the basic resistors in the resistor set to obtain a first resistor connected between the input terminal and the base; connecting at least one of the remaining basic resistors in the resistor set to the emitter to obtain a second resistor connected in parallel between the base and the emitter; connecting the base to the collector to obtain the target bias resistor built-in transistor. The technical solution disclosed in the present disclosure effectively solves the technical problem of the complicated manufacturing process of the traditional bias resistor built-in transistor when the required basic resistance is changed.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a method for manufacturing a bias resistor built-in transistor and a bias resistor built-in transistor. Background Art

[0002] A transistor with a built-in bias resistor is a transistor with a resistor, which combines the bias resistor in the actual circuit with the transistor chip. Some transistors with a built-in bias resistor only have one resistor connected in series on the base, which is generally called the first resistor; some transistors with a built-in bias resistor also have a second resistor connected in parallel between the base and the emitter; the first resistor and the second resistor can be matched in a variety of ways, so there are many varieties of transistors with a built-in bias resistor.

[0003] In the related art, industry personnel need to consider the size of the first resistor and the second resistor and various monitoring parameters respectively when designing the plate making and process verification of the bias resistor built-in transistor. When the resistance required by the bias resistor built-in transistor changes, it is necessary to redesign the layout and modify the process to achieve the modification of the resistance of the bias resistor built-in transistor; thus, the production of the bias resistor built-in transistor is cumbersome and time-consuming. Therefore, it is urgent to seek a simpler and more adaptable method for producing a bias resistor built-in transistor. Summary of the invention

[0004] The present disclosure provides a method for manufacturing a bias resistor built-in transistor and a bias resistor built-in transistor, so as to solve the technical problem that the manufacturing process of the conventional bias resistor built-in transistor is complicated when the resistance is changed.

[0005] To this end, in a first aspect, an embodiment of the present disclosure provides a method for manufacturing a transistor with a built-in bias resistor, the manufacturing method comprising:

[0006] providing an input terminal, a base, an emitter, a resistor set and a collector, wherein the resistor set includes at least two basic resistors;

[0007] Connecting one end of each of the basic resistors in the resistor set to the base;

[0008] According to the resistance value requirement of the built-in resistor of the transistor, the input terminal is connected to at least one of the basic resistors in the resistor set to obtain a first resistor connected between the input terminal and the base; at least one of the remaining basic resistors in the resistor set is connected to the emitter to obtain a second resistor connected in parallel between the base and the emitter;

[0009] The base and the collector are connected to obtain a desired bias resistor built-in transistor.

[0010] In one embodiment, the resistance values ​​of at least two of the basic resistors are the same.

[0011] In one implementation, the resistor set includes 7 basic resistors, and the 7 basic resistors have the same size and material.

[0012] In one embodiment, the target bias resistor built-in transistor includes a standard bias resistor built-in transistor in which the ratio of the first resistor to the second resistor is 1:1 or 1:10.

[0013] In one embodiment, the step of connecting the input terminal to at least one basic resistor in the resistor set includes:

[0014] According to the resistance value requirement of the built-in resistor of the transistor, the resistance value of the first resistor is obtained, and then according to the resistance value of the first resistor, a first connection point is determined on at least one basic resistor of the resistor set;

[0015] The input is connected to a first connection point defined on the base resistor.

[0016] In one embodiment, the step of connecting at least one of the remaining basic resistors of the resistor set to the emitter includes:

[0017] Obtaining a resistance value requirement of a second resistor, and determining a second connection point on at least one basic resistor of the resistor set according to the resistance value requirement of the second resistor;

[0018] A second connection point defined on the base resistor is connected to the emitter.

[0019] In a second aspect, an embodiment of the present disclosure further provides a bias resistor built-in transistor, wherein the bias resistor built-in transistor is manufactured using the manufacturing method of the bias resistor built-in transistor as described above; wherein the bias resistor built-in transistor comprises: an input terminal, a base, a resistor set, an emitter and a collector, wherein the resistor set comprises at least two basic resistors;

[0020] One end of each of the basic resistors in the resistor set is connected to the base;

[0021] The input terminal is connected to at least one basic resistor in the resistor set;

[0022] The emitter is connected to at least one of the remaining base resistors of the resistor set;

[0023] The base is conductively connected to the collector.

[0024] In one implementation, the resistance values ​​of the basic resistors are the same.

[0025] In one implementation, a ratio of the first resistor to the second resistor is 1:1 or 1:10.

[0026] In one embodiment, the material of the basic resistor is polysilicon, and the cross-section and length of at least two basic resistors are the same.

[0027] According to the manufacturing method of the bias resistor built-in transistor and the bias resistor built-in transistor provided in the embodiments of the present disclosure, the manufacturing method includes: providing an input terminal, a base, an emitter, a resistor set and a collector, the resistor set including at least two basic resistors; connecting one end of each of the basic resistors in the resistor set to the base; according to the resistance value requirement of the transistor built-in resistor, connecting the input terminal to at least one of the basic resistors in the resistor set to obtain a first resistor connected between the input terminal and the base; connecting at least one of the remaining basic resistors in the resistor set to the emitter to obtain a second resistor connected in parallel between the base and the emitter; and conducting the base and the collector to obtain the target bias resistor built-in transistor. The disclosed technical solution optimizes the manufacturing method of the bias resistor built-in transistor, so that when the basic resistance of the bias resistor built-in transistor needs to be changed, it is only necessary to change the first basic resistance between the input terminal and the base, that is, to change the number of resistor sets connected between the input terminal and the base or to change the length of the basic resistance of the resistor set connected between the input terminal and the base; or, change the second basic resistance connected in parallel between the base and the emitter, that is, to change the number of resistor sets connected between the base and the emitter or to change the length of the basic resistance of the resistor set connected between the base and the emitter, without changing other things, and the transistor can be designed according to the basic resistance requirement of the bias resistor built-in transistor. The above-mentioned bias resistor built-in transistor manufacturing method only needs to modify the actual resistor access position in the layout without changing the preparation process, and the target bias resistor built-in transistor can be obtained, so that the manufacturing of the entire bias resistor built-in transistor is simple, and can adapt to different resistance requirements, thereby improving the manufacturing efficiency of the bias resistor built-in transistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the following briefly introduces the drawings required for use in the embodiments or the prior art description. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor. In addition, in the drawings, the same parts are marked with the same reference numerals, and the drawings are not drawn according to the actual scale.

[0029] Figure 1A schematic flow chart of a method for manufacturing a transistor with built-in bias resistor provided in the first embodiment of the present disclosure;

[0030] Figure 2 A schematic flow chart of a method for manufacturing a transistor with built-in bias resistor provided in a second embodiment of the present disclosure;

[0031] Figure 3 A schematic diagram of the structure of a transistor with built-in bias resistor provided in the second embodiment of the present disclosure;

[0032] Figure 4 A schematic flow chart of a method for manufacturing a transistor with built-in bias resistor provided in the third embodiment of the present disclosure;

[0033] Figure 5 A schematic diagram of the structure of a transistor with built-in bias resistor provided in the third embodiment of the present disclosure;

[0034] Figure 6 A schematic flow chart of a method for manufacturing a transistor with a built-in bias resistor provided in a fourth embodiment of the present disclosure;

[0035] Figure 7 A schematic diagram of the structure of a transistor with a built-in bias resistor provided in a fourth embodiment of the present disclosure;

[0036] Figure 8 A schematic diagram of the structure of another transistor with built-in bias resistor provided in the fourth embodiment of the present disclosure;

[0037] Fig. 9 A schematic structural diagram of an electronic device provided in the fourth embodiment of the present disclosure.

[0038] Description of reference numerals:

[0039] 10, input terminal; 20, base; 30, emitter; 40, resistor set; 50, collector; 60, metal wire;

[0040] 1. Processor; 2. Communication interface; 3. Memory; 4. Communication bus. DETAILED DESCRIPTION

[0041] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present disclosure.

[0042] First embodiment

[0043] Figure 1 A schematic flow chart of a method for manufacturing a transistor with a built-in bias resistor provided in an embodiment of the present application.

[0044] See also Figure 1 The manufacturing method of the bias resistor built-in transistor includes but is not limited to the following steps S101 to S105:

[0045] Step S101, providing an input terminal 10, a base 20, an emitter 30, a resistor set 40 and a collector 50, wherein the resistor set 40 includes 7 basic resistors, and each of the basic resistors has the same resistance value; wherein the input terminal 10 is used to provide an input interface for the base 20;

[0046] Step S102, connecting one end of each basic resistor in the resistor set 40 to the base 20;

[0047] Step S103, according to the resistance value requirement of the transistor built-in resistor, the input terminal 10 is connected to the other ends of two basic resistors in the resistor set 40 to obtain a first resistor connected between the input terminal 10 and the base 20;

[0048] Step S104, connecting the other ends of two of the remaining basic resistors of the resistor set 40 to the emitter 30 to obtain a second resistor connected in parallel between the base 20 and the emitter 30;

[0049] Step S105 , conducting the base 20 and the collector 50 to obtain a bias resistor built-in transistor in which the ratio of the first resistor to the second resistor is 1:1.

[0050] Optionally, the input terminal is connected to the first resistor via a metal wire 60 , and the second resistor is connected to the emitter via a metal wire 60 .

[0051] Optionally, each basic resistor has the same size. It should be understood that the size here refers to the length and / or width of the basic resistor.

[0052] Optionally, each base resistor is made of the same material. For example, but not limited to polysilicon (Polysilicon, referred to as Poly), each Poly stick represents a 11Ω base resistor. Specifically, a thin film or bulk silicon material composed of a large number of small silicon single crystals with different orientations is called polysilicon. Undoped polysilicon has a very high basic resistivity, generally 106~107Ω·cm. Due to the presence of a large number of grain boundaries in polysilicon, defect states are formed, which reduces the concentration of free carriers, greatly increases scattering, reduces the mobility, and increases the impurity diffusion coefficient. By adjusting the doping concentration of Ploy, the length and cross-sectional area of ​​the base resistor, the resistance value of the base resistor can be adjusted.

[0053] In the embodiment of the present application, considering the small size of the transistor, the etching process is complicated and difficult to operate when the basic resistor is integrated thereon. In particular, in order to ensure the accuracy of the internal resistance value of the transistor, it is necessary to consider and calculate the resistance values ​​of the first resistor and the second resistor respectively, and ensure the high accuracy of the first resistor and the second resistor during the etching process. Based on this, combined with the actual use of transistors with different first resistor values ​​and second resistor values, this embodiment designs the ratio of the first resistor to the second resistor and makes it at a fixed ratio value, and then according to the actual demand for the built-in basic resistor of the transistor, the required purpose transistor under a certain built-in basic resistor value can be obtained by connecting the required first resistor and the second resistor; and when it is necessary to replace another transistor with a built-in basic resistor value, it is only necessary to change the position of the connected first resistor and the second resistor, and the doping concentration of the basic resistor, without redesigning the transistor layout, redesigning the etching process, redesigning the size and doping concentration of the first resistor and the second resistor, etc.

[0054] According to the manufacturing method, the pattern of the basic resistor is fixed when the transistor is designed. If the basic resistor of the transistor with built-in bias resistor needs to be changed later, it is only necessary to change the first basic resistor connected between the input terminal 10 and the base 20, that is, change the number of resistor sets 40 connected between the input terminal 10 and the base 20 or change the length of the basic resistor of the resistor set 40 connected between the input terminal 10 and the base 20; or, change the second basic resistor connected in parallel between the base 20 and the emitter 30, that is, change the number of resistor sets 40 connected between the base 20 and the emitter 30 or change the length of the basic resistor of the resistor set 40 connected in parallel between the base 20 and the emitter 30. There is no need to make other changes, and the transistor can be designed according to the basic resistance requirement of the transistor with built-in bias resistor. The method for manufacturing the transistor with built-in bias resistor does not change the preparation process, and only needs to modify the actual basic resistor access position in the layout to obtain the target bias resistor built-in transistor; at the same time, when the basic resistor needs to be changed, only one indicator, the doping concentration, needs to be monitored, which reduces the variable factors, reduces the difficulty of manufacturing the entire bias resistor built-in transistor, and can adapt to different basic resistor requirements, effectively improving the manufacturing efficiency of the bias resistor built-in transistor.

[0055] Second embodiment

[0056] Figure 2 A schematic flow chart of a method for manufacturing a transistor with a built-in bias resistor provided in the second embodiment of the present application; Figure 3 The bias resistor built-in transistor provided in the second embodiment of the present application is manufactured by the method for manufacturing the bias resistor built-in transistor provided in this embodiment.

[0057] See also Figure 2The manufacturing method of the bias resistor built-in transistor includes but is not limited to:

[0058] S201, providing an input terminal 10, a base 20, an emitter 30, a resistor set 40 and a collector 50, wherein the resistor set 40 includes 7 basic resistors, and each of the basic resistors has the same resistance value; wherein the input terminal 10 is used to provide an input interface for the base 20;

[0059] S202, connecting one end of each basic resistor in the resistor set 40 to the base 20;

[0060] S203, according to the resistance value requirement of the transistor built-in resistor, connecting the input terminal 10 to the other ends of five basic resistors in the resistor set 40 to obtain a first resistor connected between the input terminal 10 and the base 20;

[0061] S204, connecting the other ends of the remaining two basic resistors of the resistor set 40 to the emitter 30 to obtain a second resistor connected in parallel between the base 20 and the emitter 30;

[0062] S205 , connecting the base 20 and the collector 50 to obtain a bias resistor built-in transistor in which the ratio of the first resistor to the second resistor is 1:10.

[0063] Optionally, the input terminal is connected to the first resistor via a metal wire 60 , and the second resistor is connected to the emitter via a metal wire 60 .

[0064] Optionally, each basic resistor has the same size. It should be understood that the size here refers to the length and / or width of the basic resistor.

[0065] Optionally, each basic resistor is made of the same material. For example but not limited to, the basic resistor is a poly stick, and each poly stick represents a basic resistor of 11Ω.

[0066] It should be understood that this embodiment provides a standard bias resistor built-in transistor with a ratio of 1:10 between the first resistor and the second resistor to meet market demand, such as a standard transistor product with a first resistor / second resistor of 2.2Ω / 22Ω, or a standard transistor product with a first resistor / second resistor of 4.7Ω / 47Ω, etc., and the following explanation is made using 2.2Ω / 22Ω as an example.

[0067] See also Figure 3 The manufacturing method of the bias resistor built-in transistor includes: providing an input terminal 10, a base 20, an emitter 30, a resistor set 40 and a collector 50, and obtaining the target bias resistor built-in transistor by connecting the above components.

[0068] Considering the small size of the transistor, the etching process is complicated and difficult to operate when integrating the basic resistor on it. In particular, in order to ensure the accuracy of the internal resistance value of the transistor, it is necessary to consider and calculate the resistance values ​​of the first resistor and the second resistor respectively, and ensure the high accuracy of the first resistor and the second resistor during the etching process. Based on this, combined with the actual use of transistors with different first resistor values ​​and second resistor values, this embodiment designs the ratio of the first resistor to the second resistor and makes it at a fixed ratio value, and then according to the actual demand for the built-in basic resistor of the transistor, the required first resistor and the second resistor can be connected to obtain the required target transistor under a certain built-in basic resistor value; and when it is necessary to replace another transistor with a built-in basic resistor value, it is only necessary to change the position of the connected first resistor and the second resistor, and the doping concentration of the basic resistor, without redesigning the transistor layout, redesigning the etching process, redesigning the size of the first resistor and the second resistor, the doping concentration, etc.

[0069] In particular, this embodiment optimizes the manufacturing method of the bias resistor built-in transistor when the ratio of the first resistor value to the second resistor value is 1:1 and 1:10, the transistor layout thereof, the standard basic resistor configuration in the resistor set 40, the distribution method between the standard basic resistors, etc., so as to form a standard manufacturing method of transistors that can adapt to different requirements for the specific resistance values ​​of the first resistor / the second resistor in the industry, but the ratio between the two is fixed. For example, but not limited to, the first resistor is 47Ω, the second resistor is 47 ohms, and the ratio of the first resistor to the second resistor is 1:1; or, the first resistor is 11Ω, the second resistor is 11Ω, and the ratio of the first resistor to the second resistor is 1:1; or, the first resistor is 2.2Ω, the second resistor is 2.2Ω, and the ratio of the first resistor to the second resistor is 1:1, etc.

[0070] Based on this, the standard manufacturing method of the bias resistor built-in transistor provided in this embodiment is to take into account the transistors in the two cases where the ratio of the first resistor to the second resistor is 1:1 and 1:10, and set the resistor set 40 to 7 basic resistors, each of which has the same resistance value, and each basic resistor has a specific position, size, etc. on the transistor layout. It should be understood that the doping concentration of the basic resistor is not limited to the basic resistor involved in this embodiment, and can be set according to actual needs.

[0071] Specifically, first connect one end of the seven basic resistors to the base 20; then, connect the input terminal 10 to the other end of the five basic resistors close to the input terminal 10; then, connect the emitter 30 to the other end of the remaining two basic resistors close to the emitter 30; finally, connect the base 20 and the collector 50 to obtain a bias resistor built-in transistor with a ratio of the first resistor to the second resistor of 1:10.

[0072] In this manufacturing method, the number of basic resistors and the arrangement and distribution of the basic resistors are fixed when designing the layout. In this way, when the target transistor is subsequently processed, the required first resistor and second resistor can be obtained by simply connecting the basic resistors in series or in parallel, thereby obtaining the desired target bias resistor built-in transistor. The entire transistor is simple to manufacture, which greatly simplifies the manufacturing process of bias resistor built-in transistors with different requirements for the first resistor value and the second resistor value, and improves the adaptability of bias resistor built-in transistors with different internal resistances.

[0073] Third embodiment

[0074] Figure 4 A schematic flow chart of a method for manufacturing a transistor with a built-in bias resistor provided in the third embodiment of the present application; Figure 5 The bias resistor built-in transistor provided in the third embodiment of the present application is manufactured by the method for manufacturing the bias resistor built-in transistor provided in this embodiment.

[0075] See also Figure 4 The manufacturing method of the bias resistor built-in transistor includes but is not limited to:

[0076] S301, providing an input terminal 10, a base 20, an emitter 30, a resistor set 40 and a collector 50, wherein the resistor set 40 includes 7 basic resistors, and each of the basic resistors has the same resistance value; wherein the input terminal 10 is used to provide an input interface for the base 20;

[0077] S302, connecting one end of each basic resistor in the resistor set 40 to the base 20;

[0078] S303, defining the basic resistor connected between the input terminal 10 and the base 20 as a first resistor, obtaining the resistance value of the first resistor according to the resistance value requirement of the built-in resistor of the transistor, and then determining a first connection point on a basic resistor of the resistor set 40 according to the resistance value of the first resistor, determining 1 / 5 of the basic resistor close to the base 20 end as the first connection point, and connecting the input terminal 10 to the first connection point determined on the basic resistor;

[0079] S304, connecting the other ends of two of the remaining basic resistors of the resistor set 40 to the emitter 30 to obtain a second resistor connected in parallel between the base 20 and the emitter 30;

[0080] S305 , connecting the base 20 and the collector 50 to obtain a bias resistor built-in transistor in which the ratio of the first resistor to the second resistor is 1:10.

[0081] Optionally, the input terminal is connected to the first resistor via a metal wire 60 , and the second resistor is connected to the emitter via a metal wire 60 .

[0082] Optionally, each basic resistor has the same size. It should be understood that the size here refers to the length and / or width of the basic resistor.

[0083] Optionally, each basic resistor is made of the same material. For example but not limited to, the basic resistor is a Poly stick, and each Poly stick represents a 11Ω basic resistor.

[0084] It should be understood that this embodiment provides a standard bias resistor built-in transistor with a ratio of 1:10 between the first resistor and the second resistor to meet market demand, such as a standard transistor product with a first resistor / second resistor of 2.2Ω / 22Ω, or a standard transistor product with a first resistor / second resistor of 4.7Ω / 47Ω, etc., and the following explanation is made using 2.2Ω / 22Ω as an example.

[0085] See also Figure 5 The manufacturing method of the bias resistor built-in transistor includes: providing an input terminal 10, a base 20, an emitter 30, a resistor set 40 and a collector 50, and obtaining the target bias resistor built-in transistor by connecting the above components.

[0086] In this embodiment, considering the small size of the transistor, the etching process is complicated and difficult to operate when the basic resistor is integrated thereon. In particular, in order to ensure the accuracy of the internal resistance value of the transistor, it is necessary to consider and calculate the resistance values ​​of the first resistor and the second resistor respectively, and ensure the high accuracy of the first resistor and the second resistor during the etching process. Based on this, combined with the actual use of transistors with different first resistor values ​​and second resistor values, this embodiment designs the ratio of the first resistor to the second resistor and makes it at a fixed ratio value, and then according to the actual demand for the built-in basic resistor of the transistor, the required first resistor and the second resistor can be connected to obtain the required target transistor under a certain built-in basic resistor value; and when it is necessary to replace another transistor with a built-in basic resistor value, it is only necessary to change the position of the connected first resistor and the second resistor, and the doping concentration of the basic resistor, without redesigning the transistor layout, redesigning the etching process, redesigning the size and doping concentration of the first resistor and the second resistor, etc.

[0087] In particular, this embodiment optimizes the manufacturing method of the bias resistor built-in transistor when the ratio of the first resistor value to the second resistor value is 1:1 and 1:10, the transistor layout thereof, the standard basic resistor configuration in the resistor set 40, the distribution method between the standard basic resistors, etc., so as to form a standard manufacturing method of transistors that can adapt to different requirements for the specific resistance values ​​of the first resistor / the second resistor in the industry, but the ratio between the two is fixed. For example, but not limited to, the first resistor is 47Ω, the second resistor is 47 ohms, and the ratio of the first resistor to the second resistor is 1:1; or, the first resistor is 11Ω, the second resistor is 11Ω, and the ratio of the first resistor to the second resistor is 1:1; or, the first resistor is 2.2Ω, the second resistor is 2.2Ω, and the ratio of the first resistor to the second resistor is 1:1, etc.

[0088] Based on this, the standard manufacturing method of the bias resistor built-in transistor provided in this embodiment is to take into account the transistors in the two cases where the ratio of the first resistor to the second resistor is 1:1 and 1:10, and set the resistor set 40 to 7 basic resistors, each of which has the same resistance value, and each basic resistor has a specific position, size, etc. on the transistor layout. It should be understood that the doping concentration of the basic resistor is not limited to the basic resistor involved in this embodiment, and can be set according to actual needs.

[0089] Specifically, first connect one end of the seven basic resistors to the base 20; then, determine that 1 / 5 of the base resistor near the input terminal 10 is the first connection point, and connect the input terminal 10 to the first connection point determined on the basic resistor; then, connect the emitter 30 to the other end of the two basic resistors near the emitter 30; finally, connect the base 20 to the collector 50 to obtain the purpose bias resistor built-in transistor with a ratio of the first resistor to the second resistor of 1:10.

[0090] In this manufacturing method, the number of basic resistors and the arrangement and distribution of the basic resistors are fixed when designing the layout, so that when the target transistor is subsequently processed, the required first resistor can be obtained by connecting part of one of the basic resistors, and the required second resistor can be obtained by simply connecting the other two basic resistors in series, so as to obtain the desired target bias resistor built-in transistor. The manufacturing of the entire transistor is simple, and the adaptability to bias resistor built-in transistors with different internal resistances is improved.

[0091] In addition, due to the uniqueness of this embodiment, the number of basic resistors actually used is only 3, so when designing the transistor layout, the number of basic resistors thereon can also be set to only 3. At the same time, the width of each basic resistor is thickened to prevent disconnection during etching. In this way, the etching difficulty of the transistor can be effectively reduced and the processing accuracy can be ensured.

[0092] Fourth embodiment

[0093] Figure 6 A schematic flow chart of a method for manufacturing a transistor with a built-in bias resistor provided in a fourth embodiment of the present application; Figure 7 A bias resistor built-in transistor provided in the fourth embodiment of the present application, manufactured by the method for manufacturing a bias resistor built-in transistor provided in this embodiment; Figure 8 A bias resistor built-in transistor is provided in another embodiment of the present application.

[0094] See also Figure 6 The manufacturing method of the bias resistor built-in transistor includes but is not limited to:

[0095] S401, providing an input terminal 10, a base 20, an emitter 30, a resistor set 40 and a collector 50, wherein the resistor set 40 includes 7 basic resistors, and each of the basic resistors has the same resistance value; wherein the input terminal 10 is used to provide an input interface for the base 20;

[0096] S402, connecting one end of each basic resistor in the resistor set 40 to the base 20;

[0097] S403, according to the resistance value requirement of the transistor built-in resistor, connecting the input terminal 10 to the other ends of two basic resistors in the resistor set 40 to obtain a first resistor connected between the input terminal 10 and the base 20;

[0098] S404, connecting the other ends of two of the remaining basic resistors of the resistor set 40 to the emitter 30 to obtain a second resistor connected in parallel between the base 20 and the emitter 30;

[0099] S405 , connecting the base 20 and the collector 50 to obtain a bias resistor built-in transistor in which the ratio of the first resistor to the second resistor is 1:1.

[0100] Optionally, the input terminal is connected to the first resistor via a metal wire 60 , and the second resistor is connected to the emitter via a metal wire 60 .

[0101] Optionally, each basic resistor has the same size. It should be understood that the size here refers to the length and / or width of the basic resistor.

[0102] Optionally, each basic resistor is made of the same material. For example but not limited to, the basic resistor is a Poly stick, and each Poly stick represents a 11Ω basic resistor.

[0103] It should be understood that this embodiment provides a standard bias resistor built-in transistor with a ratio of 1:1 between the first resistor and the second resistor to meet market demand, such as a standard transistor product with a first resistor / second resistor of 22Ω / 22Ω, or a standard transistor product with a first resistor / second resistor of 47Ω / 47Ω, etc., and the following explanation is made using 22Ω / 22Ω as an example.

[0104] See also Figure 7 The manufacturing method of the bias resistor built-in transistor includes: providing an input terminal 10, a base 20, an emitter 30, a resistor set 40 and a collector 50, and obtaining the target bias resistor built-in transistor by connecting the above components.

[0105] Considering the small size of the transistor, the etching process is complicated and difficult to operate when integrating the basic resistor on it. In particular, in order to ensure the accuracy of the internal resistance value of the transistor, it is necessary to consider and calculate the resistance values ​​of the first resistor and the second resistor respectively, and ensure the high accuracy of the first resistor and the second resistor during the etching process. Based on this, combined with the actual use of transistors with different first resistor values ​​and second resistor values, this embodiment designs the ratio of the first resistor to the second resistor and makes it at a fixed ratio value, and then according to the actual demand for the built-in basic resistor of the transistor, the required first resistor and the second resistor can be connected to obtain the required target transistor under a certain built-in basic resistor value; and when it is necessary to replace another transistor with a built-in basic resistor value, it is only necessary to change the position of the connected first resistor and the second resistor, and the doping concentration of the basic resistor, without redesigning the transistor layout, redesigning the etching process, redesigning the size of the first resistor and the second resistor, the doping concentration, etc.

[0106] In particular, this embodiment optimizes the manufacturing method of the bias resistor built-in transistor when the ratio of the first resistor value to the second resistor value is 1:1 and 1:10, the transistor layout thereof, the standard basic resistor configuration in the resistor set 40, the distribution method between the standard basic resistors, etc., so as to form a standard manufacturing method of transistors that can adapt to different requirements for the specific resistance values ​​of the first resistor / the second resistor in the industry, but the ratio between the two is fixed. For example, but not limited to, the first resistor is 47Ω, the second resistor is 47 ohms, and the ratio of the first resistor to the second resistor is 1:1; or, the first resistor is 11Ω, the second resistor is 11Ω, and the ratio of the first resistor to the second resistor is 1:1; or, the first resistor is 2.2Ω, the second resistor is 2.2Ω, and the ratio of the first resistor to the second resistor is 1:1, etc.

[0107] Based on this, the standard manufacturing method of the bias resistor built-in transistor provided in this embodiment is to take into account the transistors in the two cases where the ratio of the first resistor to the second resistor is 1:1 and 1:10, and set the resistor set 40 to 7 basic resistors, each of which has the same resistance value, and each basic resistor has a specific position, size, etc. on the transistor layout. It should be understood that the doping concentration of the basic resistor is not limited to the basic resistor involved in this embodiment, and can be set according to actual needs.

[0108] Specifically, first connect one end of the seven basic resistors to the base 20; then, connect the input terminal 10 to the other ends of the two basic resistors close to the input terminal 10; then, connect the emitter 30 to the other ends of the two basic resistors close to the emitter 30; finally, connect the base 20 and the collector 50 to obtain a bias resistor built-in transistor with a ratio of the first resistor to the second resistor of 1:1.

[0109] In this manufacturing method, the pattern of the basic resistor is fixed when designing the layout. If the basic resistor of the bias resistor built-in transistor needs to be changed later, it is only necessary to change the number of basic resistors connected between the input terminal 10 and the base 20, and the number of basic resistors connected in parallel between the base 20 and the emitter 30. This manufacturing method makes the basic resistor pattern in the manufactured transistor layout orderly, so that when changing the basic resistor, only one indicator, the doping concentration, needs to be monitored, which is convenient for controlling / managing the monitoring process; at the same time, due to the reduction of variables, the difficulty of manufacturing transistors is reduced, which greatly improves the manufacturing efficiency of the bias resistor built-in transistor, which is conducive to the industrial development of the bias resistor built-in transistor.

[0110] See also Figure 8 It should be understood that in other embodiments, the number of basic resistors in the resistor set 40 can be set according to actual needs and is not limited to 7. For example, but not limited to, in one embodiment, the resistor set 40 is provided with 4 basic resistors, and the resistance value of each basic resistor is 22Ω; or, in another embodiment, the resistor set 40 is provided with 2 basic resistors, and the resistance value of each basic resistor is 11Ω.

[0111] Of course, in other implementations, the resistance values ​​of the multiple basic resistors in the resistor set 40 are not necessarily the same and can be designed according to actual needs.

[0112] Fifth embodiment

[0113] Fig. 9 A schematic diagram of the structure of a basic resistance device provided in an embodiment of the present application.

[0114] like Fig. 9As shown, an embodiment of the present application provides an electronic device, including a processor 1, a communication interface 2, a memory 3 and a communication bus 4, wherein the processor 1, the communication interface 2, and the memory 3 communicate with each other through the communication bus 4.

[0115] Memory 3, used for storing computer programs;

[0116] In one embodiment of the present application, the processor 1 is used to execute the program stored in the memory 3 to implement the method for manufacturing a transistor with a built-in bias resistor provided by any of the above-mentioned method embodiments, including: providing an input terminal 10, a base 20, an emitter 30, a resistor set 40 and a collector 50, wherein the resistor set 40 includes at least two basic resistors; connecting one end of each of the basic resistors in the resistor set 40 to the base 20; according to the resistance value requirement of the transistor built-in resistor, connecting the input terminal 10 to at least one of the basic resistors in the resistor set 40 to obtain a first resistor connected between the input terminal 10 and the base 20; connecting at least one of the remaining basic resistors in the resistor set 40 to the emitter 30 to obtain a second resistor connected between the base 20 and the emitter 30; and connecting the base 20 and the collector 50 to obtain the target transistor with a built-in bias resistor.

[0117] The embodiment of the present application also provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by the processor 1, a method for manufacturing a transistor with a built-in bias resistor as provided in any of the aforementioned method embodiments is implemented, including: providing an input terminal 10, a base 20, an emitter 30, a resistor set 40 and a collector 50, wherein the resistor set 40 includes at least two basic resistors; connecting one end of each of the basic resistors in the resistor set 40 to the base 20; according to the resistance value requirement of the transistor built-in resistor, connecting the input terminal 10 to at least one of the basic resistors in the resistor set 40 to obtain a first resistor connected between the input terminal 10 and the base 20; connecting at least one of the remaining basic resistors in the resistor set 40 to the emitter 30 to obtain a second resistor connected in parallel between the base 20 and the emitter 30; and conducting the base 20 and the collector 50 to obtain the target transistor with a built-in bias resistor.

[0118] It should be noted that, in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0119] The above description is only a specific embodiment of the present disclosure, so that those skilled in the art can understand or implement the present disclosure. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present disclosure. Therefore, the present disclosure will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for manufacturing a transistor with a built-in bias resistor, characterized in that: The production method comprises: providing an input terminal, a base, an emitter, a resistor set and a collector, wherein the resistor set includes at least two basic resistors; Connecting one end of each of the basic resistors in the resistor set to the base; According to the resistance value requirement of the built-in resistor of the transistor, the input terminal is connected to at least one of the basic resistors in the resistor set to obtain a first resistor connected between the input terminal and the base; at least one of the remaining basic resistors in the resistor set is connected to the emitter to obtain a second resistor connected in parallel between the base and the emitter; According to the requirement for the built-in basic resistance of the transistor, the ratio of the first resistance to the second resistance is designed and kept at a fixed ratio value; By changing the first resistor of the basic resistor connected between the input terminal and the base, that is, changing the number of resistors connected between the input terminal and the base or changing the length of the basic resistor of the resistor set connected between the input terminal and the base; or, by changing the second resistor of the basic resistor connected in parallel between the base and the emitter, that is, changing the number of resistors connected between the base and the emitter or changing the length of the basic resistor of the resistor set connected in parallel between the base and the emitter; The base and the collector are connected to obtain a desired bias resistor built-in transistor.

2. The method for manufacturing a transistor with a built-in bias resistor according to claim 1, characterized in that: The resistance values ​​of at least two of the basic resistors are the same.

3. The method for manufacturing a transistor with a built-in bias resistor according to claim 2, wherein: The resistor set includes 7 basic resistors, and the 7 basic resistors have the same size and material.

4. The method for manufacturing a transistor with a built-in bias resistor according to claim 3, characterized in that: The target bias resistor built-in transistor includes a standard bias resistor built-in transistor in which the ratio of the first resistor to the second resistor is 1:1 or 1:

10.

5. The method for manufacturing a transistor with a built-in bias resistor according to claim 1, wherein: The step of connecting the input terminal to at least one basic resistor in the resistor set includes: According to the resistance value requirement of the built-in resistor of the transistor, the resistance value of the first resistor is obtained, and then according to the resistance value of the first resistor, a first connection point is determined on at least one basic resistor of the resistor set; The input is connected to a first connection point defined on the base resistor.

6. The method for manufacturing a transistor with a built-in bias resistor according to claim 1, wherein: The step of connecting at least one of the remaining basic resistors of the resistor set to the emitter includes: Obtaining a resistance value requirement of a second resistor, and determining a second connection point on at least one basic resistor of the resistor set according to the resistance value requirement of the second resistor; A second connection point defined on the base resistor is connected to the emitter.

7. A transistor with a built-in bias resistor, characterized in that: The bias resistor built-in transistor is manufactured by the manufacturing method of the bias resistor built-in transistor according to any one of claims 1 to 6; wherein the bias resistor built-in transistor comprises: an input terminal, a base, a resistor set, an emitter and a collector, and the resistor set comprises at least two basic resistors; One end of each of the basic resistors in the resistor set is connected to the base; The input terminal is connected to at least one basic resistor in the resistor set; The emitter is connected to at least one of the remaining base resistors of the resistor set; The base is conductively connected to the collector.

8. The transistor with built-in bias resistor according to claim 7, wherein: The resistance values ​​of the basic resistors are the same.

9. The transistor with built-in bias resistor according to claim 8, characterized in that: The ratio of the first resistor to the second resistor is 1:1 or 1:

10.

10. The transistor with built-in bias resistor according to claim 8, wherein: The material of the basic resistor is polysilicon, and the cross-section and length of the at least two basic resistors are the same.

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