Plasma corrosion resistant semiconductor component and preparation method thereof and plasma reaction device

Abstract

The present invention discloses a semiconductor component resistant to plasma corrosion, a preparation method thereof and a plasma reaction device, the method comprising: providing a semiconductor component body; providing a target material for providing a molecular flow with randomly distributed crystal faces; providing at least one crystal face filter, arranged between the semiconductor component body and the target material, for selectively filtering the molecular flow, so as to form a plasma corrosion resistant coating on the surface of the semiconductor component body, the coating having a plurality of crystal face structures corresponding to different strengths. The present invention arranges a crystal face filter between the semiconductor component body and the target material, preferentially depositing crystal faces corresponding to each strength less than the third highest strength on the surface of the crystal face filter, so as to achieve the main deposition of each crystal face corresponding to each strength greater than the fourth highest strength on the surface of the semiconductor component body, so that the coating achieves an effect similar to a single crystal structure, improves the corrosion resistance of the coating, and further improves the plasma etching level.

Description

Technical Field

[0001] The invention relates to the technical field of plasma etching, and in particular to a plasma corrosion-resistant semiconductor component and a preparation method thereof, and a plasma reaction device. Background Art

[0002] Plasma etching technology plays a key role in the field of integrated circuit manufacturing. During the plasma etching process, physical bombardment and chemical reactions will also act on all parts in contact with the plasma inside the etching chamber, causing corrosion. Therefore, for the parts in the etching chamber, some plasma corrosion-resistant coatings are usually applied to protect the parts from corrosion.

[0003] In the latest 5nm process, the number of plasma etching process steps has increased to more than 17%. The significant increase in etching power and steps in advanced process technology requires that the components in the plasma etching chamber have higher resistance to plasma physical bombardment and chemical corrosion, produce less micro-particle pollution and metal pollution, and further ensure the stability and repeatability of the etching equipment process. Summary of the invention

[0004] The purpose of the present invention is to solve the problem of easy corrosion of semiconductor parts in a plasma environment.

[0005] In order to achieve the above object, the present invention provides a method for preparing a semiconductor component, which comprises:

[0006] Providing a semiconductor component body;

[0007] Providing a target material for providing a molecular flow with a random distribution of crystal planes;

[0008] At least one crystal face filter is provided, which is arranged between the semiconductor component body and the target material, and is used to selectively filter the molecular flow to form a plasma corrosion-resistant coating on the surface of the semiconductor component body. The coating has a plurality of crystal face structures corresponding to different strengths. The different strengths are arranged from high to low and include: the highest strength, the second highest strength, the third highest strength and the fourth highest strength. The ratio range of the highest strength to the fourth highest strength is 1:1-10:1.

[0009] Furthermore, the ratio of the highest intensity to the third highest intensity is in the range of 1:1-10:1.

[0010] Furthermore, the ratio of the highest strength to the second highest strength is in the range of 1:1-10:1.

[0011] Furthermore, the crystal plane spacing of the crystal plane filter is equivalent to the crystal plane spacing corresponding to each intensities less than the third highest intensity, so as to preferentially deposit the crystal planes corresponding to each intensities less than the third highest intensity, while depositing the crystal planes corresponding to each intensities greater than or equal to the third highest intensity on the surface of the semiconductor component body.

[0012] Furthermore, the crystal plane spacing of the crystal plane filter is equivalent to the crystal plane spacing corresponding to each intensities less than the second highest intensity, so as to preferentially deposit the crystal planes corresponding to each intensities less than the second highest intensity, while depositing the crystal planes corresponding to each intensities greater than or equal to the second highest intensity on the surface of the semiconductor component body.

[0013] Furthermore, the crystal plane spacing of the crystal plane filter is equivalent to the crystal plane spacing corresponding to each intensities less than the first high intensity, so as to preferentially deposit each crystal plane corresponding to each intensities less than the first high intensity, and deposit each crystal plane corresponding to each intensities of the first high intensity on the surface of the semiconductor component body.

[0014] Furthermore, the crystal plane filter is arranged in parallel with the semiconductor component body, and the crystal plane filter is also provided with through holes to allow the molecular flow to pass through so as to deposit crystal planes corresponding to each intensity greater than or equal to the third highest intensity on the surface of the semiconductor component body.

[0015] Furthermore, the porosity of the through hole is not less than 50%.

[0016] Furthermore, the porosity of the through hole is adjusted according to the distance between the through hole and the target material, and the greater the distance, the smaller the porosity.

[0017] Furthermore, at least one crystal plane filter is provided on the side between the semiconductor component body and the target material, for preferentially depositing crystal planes corresponding to intensities less than the third highest intensity.

[0018] Furthermore, the crystal surface filter arranged on the side between the semiconductor component body and the target material is spaced a distance from the semiconductor component body, and the angle between the two is 0-30°, or 30-45°, or 45-60°, or 60-90°, or 90°-120°, or 120°-135° or 135-165°.

[0019] Furthermore, the method also includes: providing an auxiliary enhancement source, wherein the auxiliary enhancement source includes at least one of a plasma source, an ion beam source, a microwave source, and a radio frequency source.

[0020] Furthermore, the plasma corrosion resistant coating comprises: a crystalline oxide of a rare earth metal, a crystalline fluoride of a rare earth metal, a crystalline composite compound Re formed by a rare earth element, oxygen and fluorinex O y F z , a crystalline composite compound formed by rare earth elements and alumina Re x Al y O z , a crystalline composite compound formed by rare earth elements and silicon oxide Re x Si y O z Any one or a combination of any two or more thereof, wherein xyz≠0.

[0021] Furthermore, the rare earth metal crystalline oxides include LaO, La 2 O 3 , CeO, Ce 2 O 3 , CeO 2 ,PrO,Pr 2 O 3 , Pr 6 O 11 ,PrO 2 ,NdO,Nd 2 O 3 ,SmO,Sm 2 O 3 ,EuO,Eu 2 O 3 ,Gd 2 O 3 ,Tb 2 O 3 ,Tb 4 O 7 ,TbO 2 ,Dy 2 O 3 ,Ho 2 O 3 ,Er 2 O 3 ,Tm 2 O 3 ,YbO,Yb 2 O 3 ,Lu 2 O 3 At least one or a combination of two or more of the following: the crystalline fluoride of the rare earth metal includes YF 3 ,LaF 3 ,CeF 3 ,CeF 4 ,PrCl 3 ,PrCl 4 ,NdF 3 ,SmF 2 ,SmF 3 ,EuF 2 ,EuF3 ,GdF 3 , TbF 3 ,TbF 4 ,DyF 3 ,HoF 3 ,ErF 3 ,TmF 2 ,TmF 3 ,YbF 3 ,LuF 3 At least one or a combination of two or more of the rare earth elements, oxygen and fluorine to form a crystalline composite compound Re x O y F z Selected from: YOF,Y 5 O 4 F 7 ,Y 6 O 5 F 8 ,Y 7 O 6 F 9 ,Y 17 O 14 F 23 ,LaOF,CeOF,CeO 6 F 2 ,PrOF,NdOF,SmOF,EuOF,Eu 3 O 2 F 5 ,Eu 5 O 4 F 7 ,GdOF,Gd 5 O 4 F 7 ,TbOF,DyOF,HoOF,ErOF,Er 3 O 2 F 5 ,Er 5 O 4 F 7 ,TmOF,YbOF,Yb 5 O 4 F 7 ,Yb 6 O 5 F 8 ,LuO,Lu 3 O 2 F 5 ,Lu 5 O 4 F 7 ,Lu 7 O 6 F 9At least one or a combination of two or more of the rare earth elements and alumina to form a crystalline composite compound Re x Al y O z Selected from: Y 4 Al 2 O 9 ,YAlO 3 ,Y 3 Al 5 O 12 , LaAlO 3 , CeAlO 3 , Ce 6 AlO 3 , Pr 4 Al 2 O 9 , PrAlO 3 , PrAl 11 O 18 , Nd 4 Al 2 O 9 , NdAlO 3 ,NdAl 11 O 18 , Sm 4 Al 2 O 9 , SmAlO 3 ,Eu 4 Al 2 O 9 、EuAlO 3 、Eu 3 Al 5 O 12 , Gd 4 Al 2 O 9 、GdAlO 3 , Gd 3 Al 5 O 12 , Tb 4 Al 2 O 9 、TbAlO 3 , Tb 3 Al 5 O 12 ,Dy 4 Al 2 O 9 、DyAlO 3 、Dy 3 Al 5 O 12 , Ho 4 Al 2 O 9 、HoAlO3 、Ho 3 Al 5 O 12 , Er 4 Al 2 O 9 、ErAlO 3 , Er 3 Al 5 O 12 , Tm 4 Al 2 O 9 、TmAlO 3 、Tm 3 Al 5 O 12 , Yb 4 Al 2 O 9 , Yb 6 Al 10 O 24 , Lu 4 Al 2 O 9 、LuAlO 3 、Lu 3 Al 5 O 12 At least one or a combination of two or more of the rare earth elements and silicon oxide to form a crystalline composite compound Re x Si y O z Selected from: Y 2 SiO 5 ,

[0022] Y 2 Si 2 O 7 ,La 2 SiO 5 , La 2 Si 2 O 7 ,Ce 2 SiO 5 ,Pr 2 SiO 5 ,Pr 2 Si 2 O 7 ,Nd 2 SiO 5 ,Nd 4 Si 3 O 12 , Nd 2 Si 2 O 7 ,Sm 2 SiO 5 ,Sm4 Si 3 O 12 ,Sm 2 Si 2 O 7 , Eu 2 SiO 5 ,EuSiO 3 ,Eu 2 Si 2 O 7 ,Gd 2 SiO 5 ,Gd 4 Si 3 O 12 ,Gd 2 Si 2 O 7 ,Tb 2 SiO 5 ,Tb 2 Si 2 O 7 , Dy 2 SiO 5 , Dy 4 Si 3 O 12 , Dy 2 Si 2 O 7 , Ho 2 SiO 5 Err 2 Si 2 O 7 Err 2 SiO 5 Err 4 Si 3 O 12 Err 2 Si 2 O 7 ,Tm 2 SiO 5 ,Tm 2 Si 2 O 7 ,Yb 2 SiO 5 ,Yb 4 Si 3 O 12 , Yb 2 Si 2 O 7 ,Lu 2 SiO 5 ,Lu 4 Si 3 O 12 ,Lu 2 Si2 O 7 At least one or a combination of two or more; wherein, xyz≠0;.

[0023] The present invention also provides a semiconductor component resistant to plasma corrosion, comprising:

[0024] Semiconductor component body; and,

[0025] Applying a corrosion-resistant coating on the surface of the semiconductor component body;

[0026] Among them, the corrosion-resistant coating has multiple crystal plane structures corresponding to different strengths, and the different strengths are arranged from high to low including: highest strength, second highest strength, third highest strength and fourth highest strength, and the ratio range of the highest strength to the fourth highest strength is 1:1-10:1.

[0027] Furthermore, the plasma corrosion resistant coating has a thickness of 10nm-5000nm.

[0028] Furthermore, the plasma corrosion resistant coating comprises: a crystalline oxide of a rare earth metal, a crystalline fluoride of a rare earth metal, a crystalline composite compound Re formed by a rare earth element, oxygen and fluorine x O y F z , a crystalline composite compound formed by rare earth elements and alumina Re x Al y O z , a crystalline composite compound formed by rare earth elements and silicon oxide Re x Si y O z Any one or a combination of any two or more thereof, wherein xyz≠0.

[0029] The present invention also provides a plasma reaction device, which comprises:

[0030] Vacuum chamber;

[0031] The above-mentioned semiconductor components;

[0032] Wherein, in the working state, the vacuum chamber is a plasma environment, and the semiconductor components are exposed to the plasma environment.

[0033] Furthermore, the plasma environment includes any one or more plasmas of F, Cl, O, and H.

[0034] Furthermore, the plasma reaction device is an inductively coupled plasma reaction device, and the semiconductor components include one or more of a ceramic cover plate, an inner sleeve, a gas nozzle, a gas connection flange, an electrostatic chuck, a cover ring, a focusing ring, an insulating ring, a plasma confinement ring or a substrate holding frame.

[0035] Furthermore, the plasma reaction device is a capacitively coupled plasma reaction device, and the semiconductor components include at least one of a shower head, a gas distribution plate, an upper grounding ring, a bushing, a lower grounding ring, a gas connection flange, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring, a bushing or a substrate holding frame.

[0036] The present invention sets a crystal plane filter between the semiconductor component body to be coated and the target material, and preferentially deposits crystal planes corresponding to each intensity less than the third highest intensity on the surface of the crystal plane filter before the molecular flow reaches the semiconductor component body, thereby achieving the goal of mainly depositing crystal planes corresponding to each intensity greater than the fourth highest intensity on the surface of the semiconductor component body, so that the coating achieves an effect similar to a single crystal structure, improves the corrosion resistance of the coating, and further improves the plasma etching level. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 This is the XRD diagram corresponding to an existing YOF coating.

[0038] Figure 2 The present invention is a process flow chart of a method for preparing a semiconductor component resistant to plasma corrosion.

[0039] Figure 3 It is a schematic diagram of a PVD coating coating device with crystal surface filtering function of the present invention.

[0040] Figure 4 This is a schematic diagram of another PVD coating device with crystal surface filtering function according to the present invention.

[0041] Figure 5 This is an XRD diagram of a YOF corrosion-resistant coating after crystal orientation selection according to the present invention.

[0042] Figure 6 This is the XRD diagram of another YOF corrosion-resistant coating after crystal orientation selection according to the present invention.

[0043] Figure 7 This is the XRD diagram of another YOF corrosion-resistant coating after crystal orientation selection according to the present invention.

[0044] Figure 8 It is a schematic diagram of an inductively coupled plasma reaction device of the present invention.

[0045] Figure ID:

[0046] Coating 10

[0047] Vacuum chamber 30

[0048] Target 31

[0049] Semiconductor component body 32

[0050] Crystal filter 33

[0051] Through hole 331

[0052] Auxiliary enhancement source 34

[0053] Plasma reaction device 800

[0054] Base 810

[0055] Inner bushing 821

[0056] Gas Nozzle 822

[0057] Electrostatic chuck 823

[0058] Focus ring 824

[0059] Insulation Ring 825

[0060] Cover Ring 826

[0061] Plasma confinement ring 827

[0062] Ceramic cover 828

[0063] Substrate W. DETAILED DESCRIPTION

[0064] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0065] In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "upper", "lower", "left", "right", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", and "fourth" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0066] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0067] The plasma reaction device of the present invention comprises: a vacuum chamber; and a semiconductor component disposed in the vacuum chamber. In the working state, the vacuum chamber is a plasma environment, and the semiconductor component is exposed to the plasma environment. In order to prevent the semiconductor component from being corroded by plasma, the surface of the semiconductor component body can be coated with yttrium (Y 2 O 3 , YF 3 , YOF, etc.) coatings are used to protect the workpiece. However, in practice, the long-term plasma environment and frequent etching processes still limit the service life of the coating. Therefore, how to improve the coating to achieve better corrosion resistance and increase the service life of semiconductor components is a long-term issue in this field.

[0068] The present invention has found through research that the main phases in these coatings are mostly polycrystalline structures, and the lack of design and control of the crystal plane orientation limits the corrosion resistance of the coating. Taking the YOF coating as an example, the main phases in the coating are mostly polycrystalline structures. During the deposition process of the coating, the crystal orientations of the grains forming the coating are random and uncontrolled, so the crystal orientations of the coating finally formed are distributed according to certain statistical laws. The XRD corresponding to the coating is as follows Figure 1 As shown. The distribution of I1, I2, and I3 corresponds to the intensity of the three most densely packed planes of YOF. For the face-centered cubic structure of YOF, I1, I2, and I3 correspond to the XRD diffraction relative intensities of the first close-packed plane (111), the second close-packed plane (200), and the third close-packed plane (220), respectively. Among them, the relative intensity ratio of I1:I2:I3 is about 6:4:3.

[0069] The technical concept of the present invention includes: by designing and controlling the crystal plane orientation, preparing a coating in which the crystal plane corresponding to the most densely packed plane strength occupies a higher proportion in all crystal directions (i.e., in the case of Figure 1 The coating has a corrosion resistance close to that of a single crystal structure, thereby improving the corrosion resistance of the coating and further improving the plasma etching level.

[0070] like Figure 2 As shown, in order to realize the technical concept, the present invention provides a method for preparing a semiconductor component, which comprises:

[0071] S1, providing a semiconductor component body;

[0072] S2, providing a target material for providing a molecular flow with random distribution of crystal planes;

[0073] S3, providing at least one crystal plane filter, which is arranged between the semiconductor component body and the target material, and is used to selectively filter the molecular flow to form a plasma corrosion-resistant coating on the surface of the semiconductor component body, wherein the coating has a plurality of crystal plane structures corresponding to different strengths, and the different strengths are arranged from high to low and include: the highest strength, the second highest strength, the third highest strength and the fourth highest strength, and the ratio range of the highest strength to the fourth highest strength is 1:1-10:1.

[0074] In order to concentrate the most densely packed surface, different crystal surface filters can be set, and in the formed coating, the ratio of the highest intensity to the third highest intensity ranges from 1:1 to 10:1.

[0075] If the most densely packed surface needs to be further concentrated, different crystal surface filters can be set to form a coating in which the ratio of the highest intensity to the second highest intensity is in the range of 1:1-10:1.

[0076] like Figure 3 FIG. 1 is a schematic diagram of a PVD (Physical Vapor Deposition) coating device with a crystal surface filtering function according to the present invention. The device includes a vacuum chamber 30, a target material 31, a semiconductor component body 32, and a crystal surface filter 33, wherein the crystal surface filter 33 is located between the target material 31 and the semiconductor component body 32.

[0077] During the coating process of the coating 10, the target material 31 is excited to form a molecular flow with random distribution of crystal planes. After partial filtering by the crystal plane filter 33, the distribution of crystal planes in the molecular flow changes, and finally a corrosion-resistant coating 10 with a designed corresponding crystal plane intensity distribution is deposited on the surface of the semiconductor component body 32. An auxiliary enhancement source 34 can also be set between the crystal plane filter 33 and the semiconductor component body 32 to increase the energy of the filtered molecular flow and improve the density of the coating 10. The auxiliary enhancement source 34 includes at least one of a plasma source, an ion beam source, a microwave source, and a radio frequency source.

[0078] The crystal face filter 33 needs to meet certain conditions to achieve the effect of crystal face filtering. When the main crystal face spacing of the material is not the strongest dense stacking face of the corrosion-resistant coating (for example, each crystal face corresponding to each strength less than the third highest strength, that is, Figure 1When the crystal plane spacings of the crystal planes (311), (222), (400), (331)) in the molecular flow are similar, when the molecular flow passes through the crystal plane filter 33, the crystal planes in the molecular flow that are equivalent to the crystal plane spacing of the crystal plane filter will be preferentially deposited, forming a coating with non-most densely packed faces on the crystal plane filter, thereby reducing the density of the corresponding crystal planes in the molecular flow and forming a filtering effect. Furthermore, when the filtered molecular flow deposits the coating 10 on the surface of the semiconductor component body 32, the crystal plane strength in this direction will be greatly reduced, thereby achieving the selective deposition of the required crystal planes on the surface of the semiconductor component body 32. For example, the crystal plane spacing of the crystal plane filter is equivalent to the crystal plane spacings corresponding to each strength less than the third highest strength, so that each crystal plane corresponding to each strength less than the third highest strength is preferentially deposited, and each crystal plane corresponding to each strength greater than or equal to the third highest strength is deposited on the surface of the semiconductor component body.

[0079] In some embodiments, the crystal plane spacing of the crystal plane filter is equivalent to the crystal plane spacing corresponding to each intensities less than the second highest intensity, so as to preferentially deposit each crystal plane corresponding to each intensities less than the second highest intensity, while depositing each crystal plane corresponding to each intensities greater than or equal to the second highest intensity on the surface of the semiconductor component body.

[0080] In some embodiments, the crystal plane spacing of the crystal plane filter is equivalent to the crystal plane spacing corresponding to each intensities less than the first high intensity, so as to preferentially deposit each crystal plane corresponding to each intensities less than the first high intensity, and deposit each crystal plane corresponding to each intensities of the first high intensity on the surface of the semiconductor component body.

[0081] When the crystal plane filter 33 is located directly above the target material 31 and is arranged parallel to the semiconductor component body 32, the crystal plane filter 33 needs to be provided with a through hole 331 so that the molecular flow filtered by the crystal plane filter can pass through to deposit various crystal planes corresponding to various intensities greater than or equal to the third highest intensity on the surface of the semiconductor component body.

[0082] In order to ensure the deposition rate, the porosity of the through hole 331 is not less than 50%. The porosity of the through hole is adjusted according to the distance between the through hole 331 and the target material 31. The larger the distance, the smaller the porosity.

[0083] like Figure 4As shown, in order to further improve the selective filtering effect, at least one crystal face filter 33 can be arranged on the side between the semiconductor component body 32 and the target material 31, for preferentially depositing each crystal face corresponding to each intensity less than the third highest intensity. The crystal face filter 33 arranged on the side between the semiconductor component body and the target material is spaced a distance from the semiconductor component body 32, and the angle α between the two is 0-30°, or 30-45°, or 45-60°, or 60-90°, or 90°-120°, or 120°-135°, or 135-165°. When the crystal face filter is placed vertically or tilted, the crystal face filter does not hinder the flow of molecular flow, so there is no need to set an open hole structure.

[0084] In order to more effectively form crystal plane selection, crystal plane filters can also be arranged on both sides between the semiconductor component body and the target material as needed to form a semi-enclosed structure with an opening facing the semiconductor component body.

[0085] The material of the crystal surface filter is selected according to the crystal surface structure of the coating to be applied, and can be Al alloy, ceramic, Si, SiC, SiN, etc., which have a crystalline structure.

[0086] In actual situations, other common coating or deposition methods are also suitable. The PVD coating method used above is only an example and is not a preferred solution.

[0087] Example 1

[0088] like Figure 5 As shown, it is an XRD spectrum of a YOF corrosion-resistant coating after crystal orientation selection according to the present invention, wherein I1, I2, and I3 correspond to the XRD diffraction relative intensities of the first close-packed plane (111), the second close-packed plane (200), and the third close-packed plane (220), respectively, wherein the relative intensity ratio of I1:I2:I3 is about 6:1:2. In this type of coating, the relative intensity I1 of the first close-packed plane (111) is much higher than the relative intensities I2, I3, etc. of other close-packed planes. In the XRD graph of coating 10, the ratio of the highest intensity peak (111) to the second highest intensity peak (220) is about 3:1; the ratio of the highest intensity peak (111) to the third highest intensity peak (200) is about 6:1; the ratio of the highest intensity peak (111) to the fourth highest intensity peak (311) is about 8:1. The strength of the crystal orientation (111) of the coating 10 is much higher than that of other crystal orientations, so that the coating can achieve an effect similar to that of a single crystal structure, thereby improving the corrosion resistance of the coating and further improving the plasma etching level.

[0089] Example 2

[0090] like Figure 6As shown in the figure, it is an XRD spectrum of another YOF corrosion-resistant coating after crystal orientation selection according to the present invention, wherein I1, I2, and I3 correspond to the XRD diffraction relative intensities of the first close-packed plane (111), the second close-packed plane (200), and the third close-packed plane (220), respectively, wherein the relative intensity ratio of I1:I2:I3 is about 2:6:3. In this type of coating, the relative intensity I2 of the second close-packed plane (200) is much higher than the relative intensities I1, I3, etc. of other close-packed planes. In the XRD graph of coating 10, the ratio of the highest intensity peak (200) to the second highest intensity peak (220) is about 2:1; the ratio of the highest intensity peak (200) to the third highest intensity peak (111) is about 3:1; the ratio of the highest intensity peak (200) to the fourth highest intensity peak (311) is about 4:1. The strength of the crystal directions (200), (220), and (111) of the coating 10 is higher than that of other crystal directions, thereby improving the corrosion resistance of the coating and further improving the plasma etching level.

[0091] Example 3

[0092] like Figure 7 As shown, it is an XRD spectrum of another YOF corrosion-resistant coating after crystal orientation selection of the present invention, wherein I1, I2, and I3 correspond to the XRD diffraction relative intensities of the first close-packed plane (111), the second close-packed plane (200), and the third close-packed plane (220), respectively, wherein the relative intensity ratio of I1:I2:I3 is about 5:6:6. In this type of coating, the relative intensities of the three most densely packed planes are present, and the relative intensity I2 of the second close-packed plane (200) is comparable to the relative intensities I1 and I3 of the other close-packed planes, and is much higher than the intensities of the other close-packed planes. In the XRD graph of coating 10, the ratio of the highest intensity peak (220) to the second highest intensity peak (200) is about 1:1; the ratio of the highest intensity peak (220) to the third highest intensity peak (111) is about 6:5; the ratio of the highest intensity peak (200) to the fourth highest intensity peak (311) is about 4:1. The strength of the crystal directions (220), (220), and (111) of the coating 10 is much higher than that of other crystal directions, which improves the corrosion resistance of the coating and further improves the plasma etching level.

[0093] In some embodiments, the plasma corrosion resistant coating of the present invention comprises: a crystalline oxide of a rare earth metal, a crystalline fluoride of a rare earth metal, a crystalline composite compound Re formed by a rare earth element, oxygen and fluorine x O y F z , a crystalline composite compound formed by rare earth elements and alumina Re x Al y O z , a crystalline composite compound formed by rare earth elements and silicon oxide Re x Si y O zAny one or a combination of any two or more thereof, wherein xyz≠0.

[0094] The crystalline oxides of the rare earth metals include LaO, La 2 O 3 , CeO, Ce 2 O 3 , CeO 2 ,PrO,Pr 2 O 3 , Pr 6 O 11 ,PrO 2 ,NdO,Nd 2 O 3 ,SmO,Sm 2 O 3 ,EuO,Eu 2 O 3 ,Gd 2 O 3 ,Tb 2 O 3 ,Tb 4 O 7 ,TbO 2 ,Dy 2 O 3 ,Ho 2 O 3 ,Er 2 O 3 ,Tm 2 O 3 ,YbO,Yb 2 O 3 ,Lu 2 O 3 At least one or a combination of two or more.

[0095] The rare earth metal fluoride comprises YF 3 ,LaF 3 ,CeF 3 ,CeF 4 ,PrCl 3 ,PrCl 4 ,NdF 3 ,SmF 2 ,SmF 3 ,EuF 2 ,EuF 3 ,GdF 3 , TbF 3 ,TbF 4 ,DyF 3 ,HoF 3 ,ErF 3 ,TmF 2 ,TmF3 ,YbF 3 ,LuF 3 At least one or a combination of two or more.

[0096] The rare earth element, oxygen and fluorine form a crystalline composite compound Re x O y F z Selected from: YOF,Y 5 O 4 F 7 ,Y 6 O 5 F 8 ,Y 7 O 6 F 9 ,Y 17 O 14 F 23 ,LaOF,CeOF,CeO 6 F 2 ,PrOF,NdOF,SmOF,EuOF,Eu 3 O 2 F 5 ,Eu 5 O 4 F 7 ,GdOF,Gd 5 O 4 F 7 ,TbOF,DyOF,HoOF,ErOF,Er 3 O 2 F 5 ,Er 5 O 4 F 7 ,TmOF,YbOF,Yb 5 O 4 F 7 ,Yb 6 O 5 F 8 ,LuO,Lu 3 O 2 F 5 ,Lu 5 O 4 F 7 ,Lu 7 O 6 F 9 At least one or a combination of two or more, where xyz≠0.

[0097] The rare earth element and alumina form a crystalline composite compound Re x Al y O z Selected from: Y 4Al 2 The 9 ,YAlO 3 ,Y 3 Al 5 The 12 ,LaAlO 3 ,CeAlO 3 ,This 6 AlO 3 ,Pr 4 Al 2 The 9 ,PrAlO 3 ,PrAl 11 The 18 ,Nd 4 Al 2 The 9 ,NdAlO 3 ,NdAl 11 The 18 ,Sm 4 Al 2 The 9 ,SmAlO 3 ,I 4 Al 2 The 9 、EuAlO 3 、Eu 3 Al 5 The 12 ,Gd 4 Al 2 The 9 、GdAlO 3 、Gd 3 Al 5 The 12 ,Tb 4 Al 2 The 9 、TbAlO 3 、Tb 3 Al 5 The 12 ,Dy 4 Al 2 The 9 、DyAlO 3 、Dy 3 Al 5 The 12 ,Ho 4 Al 2 The 9 、HoAlO 3 、Ho 3 Al 5 The 12 ,Er 4 Al 2 The9 、ErAlO 3 , Er 3 Al 5 O 12 , Tm 4 Al 2 O 9 、TmAlO 3 、Tm 3 Al 5 O 12 , Yb 4 Al 2 O 9 , Yb 6 Al 10 O 24 , Lu 4 Al 2 O 9 、LuAlO 3 、Lu 3 Al 5 O 12 At least one or a combination of two or more, where xyz≠0.

[0098] The crystalline composite compound Re formed by the rare earth element and silicon oxide x Si y O z Selected from: Y 2 SiO 5 , Y 2 Si 2 O 7 ,La 2 SiO 5 , La 2 Si 2 O 7 ,Ce 2 SiO 5 ,Pr 2 SiO 5 ,Pr 2 Si 2 O 7 ,Nd 2 SiO 5 ,Nd 4 Si 3 O 12 , Nd 2 Si 2 O 7 ,Sm 2 SiO 5 ,Sm 4 Si 3 O 12 , Sm 2 Si 2 O7 ,Eu 2 SiO 5 ,EuSiO 3 ,Eu 2 Si 2 O 7 ,Gd 2 SiO 5 ,Gd 4 Si 3 O 12 , Gd 2 Si 2 O 7 ,Tb 2 SiO 5 ,Tb 2 Si 2 O 7 ,Dy 2 SiO 5 ,Dy 4 Si 3 O 12 ,Dy 2 Si 2 O 7 ,Ho 2 SiO 5 ,Er 2 Si 2 O 7 ,Er 2 SiO 5 ,Er 4 Si 3 O 12 , Er 2 Si 2 O 7 ,Tm 2 SiO 5 ,Tm 2 Si 2 O 7 ,Yb 2 SiO 5 ,Yb 4 Si 3 O 12 , Yb 2 Si 2 O 7 ,Lu 2 SiO 5 ,Lu 4 Si 3 O 12 ,Lu 2 Si 2 O 7 At least one or a combination of two or more, where xyz≠0.

[0099] The corrosion-resistant coating with adjustable proportion of the strongest densely packed crystal planes proposed by the present invention may have other crystal structures in addition to the face-centered cubic structure. For example, the body-centered cubic structure, the strongest densely packed plane distribution is shown in Table 1, wherein the relative intensity corresponding to the first densely packed plane (100) is I1, the relative intensity of the second densely packed plane (110) is I2, and the relative intensity corresponding to the third densely packed plane (111) is I3. If the corrosion-resistant coating has other structures such as trigonal, tetragonal, hexagonal, monoclinic, triclinic, etc., it is necessary to determine the crystal planes corresponding to I1, I2, and I3 respectively according to the specific surface density.

[0100] Table 1. The most densely packed faces of face-centered cubic and body-centered cubic

[0101] type (100) (110) (111) Face-centered cubic <![CDATA[2 / a 2 ]]> <![CDATA[√2 / a 2 ]]> <![CDATA[4 / √3a 2 ]]> Body-centered cubic <![CDATA[1 / a 2 ]]> <![CDATA[√2 / a 2 ]]> <![CDATA[1 / √3a 2 ]]>

[0102] From the above table, we can see that the strongest dense packing plane of the face-centered cubic structure is (111), and the strongest dense packing plane of the body-centered cubic structure is (110).

[0103] The corrosion-resistant coating prepared by the invention can be applied to the surface of parts in contact with plasma in capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) etchers.

[0104] like Figure 8 As shown, an inductively coupled plasma reaction device provided by the present invention includes a reaction chamber and a plasma-corrosion-resistant semiconductor component prepared by the present invention, wherein the reaction chamber is a plasma environment; and the plasma-corrosion-resistant semiconductor component is exposed to the plasma environment.

[0105] The plasma reaction device 800 further includes a base 810, which is used to carry a substrate W to be processed, and the plasma is used to process the substrate W to be processed. Since plasma is highly corrosive, in order to prevent the surface of the semiconductor component body 32 from being corroded by the plasma, a plasma corrosion-resistant coating 10 needs to be coated on the surface of the semiconductor component body 32.

[0106] The semiconductor components exposed to the plasma environment include: inner liner 821, gas nozzle 822, electrostatic chuck 823, focus ring 824, insulation ring 825, cover ring 826, plasma confinement ring 827, reaction chamber top wall ceramic cover plate 828, gas connection flange (not shown) and substrate holding frame (not shown). The surfaces of these components are coated with a plasma corrosion resistant coating 10 to prevent corrosion by plasma.

[0107] The corrosion-resistant coating has multiple crystal plane structures corresponding to different strengths, and the different strengths are arranged from high to low including: highest strength, second highest strength, third highest strength and fourth highest strength, and the ratio range of the highest strength to the fourth highest strength is 1:1-10:1.

[0108] In some embodiments, the plasma corrosion resistant coating has a thickness of 10 nm-5000 nm.

[0109] In a specific application, the plasma etching device may also be a capacitively coupled plasma processing device. Accordingly, the semiconductor components exposed to the plasma environment include: a gas shower head, a gas distribution plate, an upper grounding ring, a bushing, a lower grounding ring, a gas connection flange, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring, a bushing or at least one of a substrate holding frame. The surfaces of these components need to be coated with a plasma corrosion resistant coating 10 to prevent corrosion from the plasma.

[0110] The plasma environment described in the present invention may include any one or more plasmas of F, Cl, O, and H, but is not limited thereto.

[0111] In summary, the present invention designs and controls the crystal plane orientation, and can select crystal plane filters of different materials as needed, as well as the arrangement of the crystal plane filters, to achieve control of the crystal plane structure of the coating, thereby improving the corrosion resistance of the coating.

[0112] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A method for preparing a semiconductor component, characterized in that: The method includes: Providing a semiconductor component body; Providing a target material for providing a molecular flow with a random distribution of crystal planes; At least one crystal plane filter is provided, which is arranged between the semiconductor component body and the target material, and is used for selectively filtering the molecular flow to form a plasma corrosion resistant coating on the surface of the semiconductor component body. The coating has a plurality of crystal plane structures corresponding to different strengths. The different strengths are arranged from high to low and include: the highest strength, the second highest strength, the third highest strength and the fourth highest strength. The ratio range of the highest strength to the fourth highest strength is 1:1-10:1; wherein, the crystal plane spacing of the crystal plane filter is equivalent to the crystal plane spacing of the non-most densely packed planes of the corrosion-resistant coating. When the molecular flow passes through the crystal plane filter, the crystal planes in the molecular flow that are equivalent to the crystal plane spacing of the crystal plane filter will be preferentially deposited, and a coating with the non-most densely packed planes will be formed on the crystal plane filter to reduce the density of the corresponding crystal planes in the molecular flow.

2. The method for preparing a semiconductor component as described in claim 1, wherein the ratio of the highest strength to the third highest strength is in the range of 1:1-10:

1.

3. The method for preparing a semiconductor component as claimed in claim 1, wherein the ratio of the highest strength to the second highest strength is in the range of 1:1-10:

1.

4. The method for preparing a semiconductor component according to claim 1, wherein: The crystal plane spacing of the crystal plane filter is equivalent to the crystal plane spacing corresponding to each intensities less than the third highest intensity, so as to preferentially deposit the crystal planes corresponding to each intensities less than the third highest intensity, while depositing the crystal planes corresponding to each intensities greater than or equal to the third highest intensity on the surface of the semiconductor component body.

5. The method for preparing a semiconductor component according to claim 2, wherein: The crystal plane spacing of the crystal plane filter is equivalent to the crystal plane spacing corresponding to each intensities less than the second highest intensity, so as to preferentially deposit the crystal planes corresponding to each intensities less than the second highest intensity, while depositing the crystal planes corresponding to each intensities greater than or equal to the second highest intensity on the surface of the semiconductor component body.

6. The method for preparing a semiconductor component according to claim 3, characterized in that: The crystal plane spacing of the crystal plane filter is equivalent to the crystal plane spacing corresponding to each intensities less than the first high intensity, so as to preferentially deposit each crystal plane corresponding to each intensities less than the first high intensity, and deposit each crystal plane corresponding to each intensities of the first high intensity on the surface of the semiconductor component body.

7. The method for preparing a semiconductor component according to claim 1, wherein: The crystal face filter is arranged in parallel with the semiconductor component body, and is also provided with through holes to allow molecular flow to pass through so as to deposit crystal faces corresponding to respective intensities greater than or equal to the third highest intensity on the surface of the semiconductor component body.

8. The method for preparing a semiconductor component according to claim 7, wherein: The porosity of the through hole is not less than 50%.

9. The method for preparing a semiconductor component according to claim 7, wherein: The porosity of the through hole is adjusted according to the distance between the through hole and the target material, and the greater the distance, the smaller the porosity.

10. The method for preparing a semiconductor component according to claim 7, wherein: At least one crystal plane filter is also arranged on the side between the semiconductor component body and the target material, for preferentially depositing crystal planes corresponding to intensities less than the third highest intensity.

11. The method for preparing a semiconductor component according to claim 10, wherein: The crystal surface filter arranged on the side between the semiconductor component body and the target material is spaced a distance from the semiconductor component body, and the angle between the two is 0-30°, or 30-45°, or 45-60°, or 60-90°, or 90°-120°, or 120°-135° or 135-165°.

12. The method for preparing a semiconductor component according to claim 1, wherein: The method also includes: providing an auxiliary enhancement source, wherein the auxiliary enhancement source includes at least one of a plasma source, an ion beam source, a microwave source, and a radio frequency source.

13. The method for preparing a semiconductor component according to claim 1, wherein: The plasma corrosion resistant coating comprises: crystalline oxides of rare earth metals, crystalline fluorides of rare earth metals, crystalline composite compounds of rare earth elements, oxygen and fluorine Re x O y F z , a crystalline composite compound formed by rare earth elements and alumina Re x Al y O z , a crystalline composite compound formed by rare earth elements and silicon oxide Re x Si y O z Any one or a combination of any two or more thereof, wherein xyz≠0.

14. The method for preparing a semiconductor component according to claim 13, wherein: The crystalline oxides of the rare earth metals include LaO, La2O3, CeO, Ce2O3, CeO2, PrO, Pr2O3, Pr6O 11 , PrO2, NdO, Nd2O3, SmO, Sm2O3, EuO, Eu2O3, Gd2O3, Tb2O3, Tb4O7, TbO2, Dy2O3, Ho2O3, Er2O3, Tm2O3, YbO, Yb2O3, Lu2O3 or a combination of two or more thereof; the crystalline fluoride of the rare earth metal includes at least one or a combination of two or more thereof including YF3, LaF3, CeF3, CeF4, PrCl3, PrCl4, NdF3, SmF2, SmF3, EuF2, EuF3, GdF3, TbF3, TbF4, DyF3, HoF3, ErF3, TmF2, TmF3, YbF3, LuF3; the crystalline composite compound Re formed by the rare earth element, oxygen and fluorine x O y F z Selected from: YOF, Y5O4F7, Y6O5F8, Y7O6F9, Y 17 O 14 F 23 , LaOF, CeOF, CeO6F2, PrOF, NdOF, SmOF, EuOF, Eu3O2F5, Eu5O4F7, GdOF, Gd5O4F7, TbOF, DyOF, HoOF, ErOF, Er3O2F5, Er5O4F7, TmOF, YbOF, Yb5O4F7, Yb6O5F8, LuO, Lu3O2F5, Lu5O4F7, Lu7O6F9 or a combination of at least one or more of the rare earth elements and alumina; x Al y O z Selected from: Y4Al2O9, YAlO3, Y3Al5O 12 , LaAlO3, CeAlO3, Ce6AlO3, Pr4Al2O9, PrAlO3, PrAl 11 O 18 ,Nd4Al2O9,NdAlO3,NdAl 11 O 18 , Sm4Al2O9, SmAlO3, Eu4Al2O9, EuAlO3, Eu3Al5O 12 , Gd4Al2O9, GdAlO3, Gd3Al5O 12 , Tb4Al2O9, TbAlO3, Tb3Al5O 12 , Dy4Al2O9, DyAlO3, Dy3Al5O 12 , Ho4Al2O9, HoAlO3, Ho3Al5O 12 , Er4Al2O9, ErAlO3, Er3Al5O 12 , Tm4Al2O9, TmAlO3, Tm3Al5O 12 , Yb4Al2O9, Yb6Al 10 O 24 , Lu4Al2O9, LuAlO3, Lu3Al5O 12 At least one or a combination of two or more of the rare earth elements and silicon oxide to form a crystalline composite compound Re x Si y O z Selected from: Y2SiO5, Y2Si2O7, La2SiO5, La2Si2O7, Ce2SiO5, Pr2SiO5, Pr2Si2O7, Nd2SiO5, Nd4Si3O 12 ,Nd2Si2O7,Sm2SiO5,Sm4Si3O 12 ,Sm2Si2O7,Eu2SiO5,EuSiO3,Eu2Si2O7,Gd2SiO5,Gd4Si3O 12 ,Gd2Si2O7,Tb2SiO5,Tb2Si2O7,Dy2SiO5,Dy4Si3O 12 ,Dy2Si2O7,Ho2SiO5,Er2Si2O7,Er2SiO5,Er4Si3O 12 ,Er2Si2O7,Tm2SiO5,Tm2Si2O7,Yb2SiO5,Yb4Si3O 12 , Yb2Si2O7,Lu2SiO5,Lu4Si3O 12 ,Lu2Si2O7 or a combination of two or more.

15. A semiconductor component resistant to plasma corrosion prepared by the method for preparing a semiconductor component according to any one of claims 1 to 14, characterized in that: The semiconductor components include: Semiconductor component body; and Applying a corrosion-resistant coating on the surface of the semiconductor component body; Among them, the corrosion-resistant coating has multiple crystal plane structures corresponding to different strengths, and the different strengths are arranged from high to low including: highest strength, second highest strength, third highest strength and fourth highest strength, and the ratio range of the highest strength to the fourth highest strength is 1:1-10:

1.

16. The plasma-corrosion-resistant semiconductor component according to claim 15, wherein: The ratio of the highest strength to the third highest strength is in the range of 1:1-10:

1. More preferably, the ratio of the highest strength to the second highest strength is in the range of 1:1-10:

1.

17. The plasma-corrosion-resistant semiconductor component according to claim 15, wherein: The plasma corrosion resistant coating has a thickness of 10nm-5000nm.

18. The plasma-corrosion-resistant semiconductor component according to claim 15, wherein: The plasma corrosion resistant coating comprises: crystalline oxides of rare earth metals, crystalline fluorides of rare earth metals, crystalline composite compounds of rare earth elements, oxygen and fluorine Re x O y F z , a crystalline composite compound formed by rare earth elements and alumina Re x Al y O z , a crystalline composite compound formed by rare earth elements and silicon oxide Re x Si y O z Any one or a combination of any two or more thereof, wherein xyz≠0.

19. A plasma reaction device, characterized in that: It contains: Vacuum chamber; The semiconductor component according to any one of claims 15 to 18; Wherein, in the working state, the vacuum chamber is a plasma environment, and the semiconductor components are exposed to the plasma environment.

20. The plasma reaction device according to claim 19, characterized in that: The plasma reaction device is an inductively coupled plasma reaction device, and the semiconductor components include one or more of a ceramic cover plate, an inner sleeve, a gas nozzle, a gas connection flange, an electrostatic chuck, a cover ring, a focusing ring, an insulating ring, a plasma confinement ring or a substrate holding frame.

21. The plasma reaction device according to claim 19, characterized in that: The plasma reaction device is a capacitively coupled plasma reaction device, and the semiconductor components include at least one of a shower head, a gas distribution plate, an upper grounding ring, a bushing, a lower grounding ring, a gas connection flange, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring, a bushing or a substrate holding frame.

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