Method for manufacturing semiconductor lead frame

Abstract

The present invention belongs to the technical field of semiconductor integrated circuit lead frame etching manufacturing, and specifically relates to a method for manufacturing semiconductor lead frame etching equipment, and a method for producing and processing precision semiconductor lead frames by using the semiconductor lead frame etching equipment. Specifically, it includes the cleaning and surface roughening process of copper alloy materials, the bonding of materials and photosensitive dry films, the exposure of materials after bonding through a mask using laser equipment, development, etching, film stripping processes, and various electrolytic metal processes. The semiconductor lead frame etching production and manufacturing equipment of the present invention provides a practical production and manufacturing technology for the preparation and processing of complex and precise semiconductor lead frames; the semiconductor lead frame with surface roughness obtained by the method of the present invention has high etching precision, its surface residue is greatly reduced, the thickness distribution of various electrolytic metal films is uniform, and the bonding strength of its interface is significantly improved.

Description

Technical Field

[0001] The invention belongs to the technical field of etching and manufacturing of semiconductor integrated circuit lead frames, and in particular relates to a manufacturing method of a semiconductor lead frame. Background Art

[0002] In the field of semiconductor lead frame manufacturing technology, the use of etching technology to process metal materials into a variety of high-tech fields required for precision semiconductor electronic products has become a very important topic. For example, the important technical core of semiconductor integrated circuits, chip manufacturing technology is an important foundation and core component of the development of high-end science and technology; semiconductor lead frames, as chip carriers of integrated circuits, are important basic raw materials in the electronic information industry; therefore, semiconductor lead frame manufacturing technology is an important basic material for manufacturing high-precision semiconductor integrated circuits.

[0003] In the field of modern electronic information industry, semiconductor lead frame etching equipment is a very important basic manufacturing core technology. At present, semiconductor lead frame etching manufacturing equipment is a crucial core foundation that affects the manufacturing level of modern integrated circuit semiconductor lead frames. Only by continuously improving the process level and manufacturing precision of etching manufacturing equipment can the sustainable development of semiconductor integrated circuit lead frame manufacturing technology in the modern electronic information industry be continuously improved.

[0004] In order to improve the manufacturing process level of semiconductor lead frame etching equipment, the following patent documents provide various solutions.

[0005] However, in the actual industrial production using semiconductor lead frame etching manufacturing equipment, there are still many problems that affect the quality of semiconductor lead frame products that have not been solved, resulting in a high product loss rate; especially the loss rate of mid-to-high-end precision semiconductor lead frames is as high as 15-50%, and the production efficiency is extremely low, resulting in a large amount of unnecessary production costs. Therefore, the various problems existing in semiconductor lead frame etching manufacturing equipment in actual industrial production are important issues that need to be solved.

[0006] In the long-term research and development of semiconductor lead frame etching manufacturing equipment, as well as the actual industrial production equipment manufacturing and operation process, solving the following problems has always been the primary goal of research and development:

[0007] The bonding force between the metal material and the photosensitive dry film is not strong, which results in the subsequent production and processing not being able to proceed normally, reducing the authenticity rate of the product. Summary of the invention

[0008] The purpose of the present invention is to provide a method for manufacturing a semiconductor lead frame to solve the technical problem that the bonding force between the metal material and the photosensitive dry film is not strong enough, so as to achieve the purpose of improving the bonding force between the metal material and the photosensitive dry film.

[0009] In order to solve the above technical problems, the present invention provides a method for manufacturing a semiconductor lead frame, comprising the following steps:

[0010] S1: Clean the copper alloy material until the oil, impurities and metal oxides on the surface are removed, and then the surface is roughened and dried;

[0011] S2: Evenly attaching a photosensitive dry film to the surface of the copper alloy material treated in step S1;

[0012] S3: Use the product pattern mask to perform exposure processing for 10-120 seconds through continuous processing equipment to transfer the product pattern to the photosensitive dry film;

[0013] S4: the copper alloy material subjected to the exposure treatment in S3 is continuously passed through a developing device processing system, and is subjected to spray wetting, spray penetration, spray expansion and spray impact of a developing solution for a processing time of 30-120 seconds, so as to remove the photosensitive dry film in the non-exposed area, and obtain a photosensitive dry film having a product structure pattern on the surface of the copper alloy material;

[0014] S5: washing the copper alloy material treated in step S4, acid-immersing, washing, and drying to obtain a photosensitive dry film having a product structure pattern on the surface of the clean copper alloy material;

[0015] S6: the copper alloy material processed in step S5 is continuously passed through an etching equipment processing system, and is processed for about 270-390 seconds in total to dissolve and remove the copper alloy area without the exposed photosensitive dry film, so as to obtain a continuous copper alloy material with an etching pattern;

[0016] S7: While the etching process is being carried out in step S6, the concentration of the etching solution is analyzed in real time by the automatic analysis and replenishment equipment of the etching solution, and the components of the etching solution are replenished in real time to maintain a small range of variation of the concentration of the etching solution, thereby ensuring that the etching capacity of the etching solution does not fluctuate greatly.

[0017] S8: washing the copper alloy material treated in steps S6 and S7, acid immersion treatment, washing, and surface roughening to obtain a continuous copper alloy material with an etching pattern suitable for subsequent processes;

[0018] S9: The continuous copper alloy material with the etching pattern processed in step S8 is continuously passed through the film removal equipment processing system, and the photosensitive dry film in the exposure area is removed by spray wetting, spray penetration, spray expansion and spray impact of the stripping solution for a total of about 150-210 seconds to obtain an etched copper alloy material with a product structure pattern;

[0019] S10: washing the copper alloy material treated in step S9, acid-immersing and washing the copper alloy material to obtain a continuous copper alloy material with an etching pattern suitable for subsequent processes;

[0020] S11: The clean continuous copper alloy material with the etching pattern obtained in S10 is treated with a copper protective agent, washed with water, dried and rolled up to obtain a continuous semiconductor lead frame etching semi-finished product.

[0021] S12: The semiconductor lead frame etching semi-finished product obtained in S11 is processed through a semiconductor lead frame electrolytic surface treatment device to prepare various precision lead frame products.

[0022] Furthermore, the step S1 adopts a chemical impregnation method to prepare a copper alloy material with a suitable surface roughness, and the surface roughness ranges from 0.15 to 0.95 μm.

[0023] Furthermore, the pressure and speed of the spray wetting, spray penetration, spray expansion and spray impact of the developing solution of the developing equipment processing system in step S4 are set and controlled respectively, and the spray pressure range is 0.3-1.3Pa, and the spray speed range is 5.3-10.3L / min.

[0024] Furthermore, the acid immersion treatment in step S5 removes the residual developing solution, and the acid immersion treatment time is 10-30 seconds.

[0025] Furthermore, the various parameters of the jet wetting, jet dipping and jet impact of the etching equipment processing system in step S6, such as pressure, speed and temperature, can be set and controlled separately to corrode the area on the surface of the metal copper alloy material that is not protected by the photosensitive dry film. The jet pressure range is 0.3-1.3 Pa, the jet speed range is 5.3-10.3 L / min, and the etching solution temperature range is 55.0 degrees ± 0.5 degrees.

[0026] Furthermore, in the etching equipment processing system of step S7, the concentrations of various active ingredients of the etching solution are automatically analyzed and automatically added, and the concentration control range of the active ingredients is: the set standard concentration ±5%.

[0027] Furthermore, the temperature and solution flow rate of the surface roughening treatment process in step S8 can be adjusted and controlled, the solution flow rate range is 5.3-10.3 liters / minute, and the solution temperature control range is 40.0 degrees ± 0.5 degrees.

[0028] Furthermore, the pressure and speed of the spray wetting, spray penetration, spray expansion and spray impact of the film removal equipment processing system in step S9 can be set and controlled respectively, the spray pressure range is 0.3-1.3Pa, and the spray speed range is 5.3-10.3L / min; the film removal solution needs to be composed of a solution with a strong alkalinity. It is also characterized in that the reaction of the developed dry film and the undeveloped dry film with the stripping solution is quite different.

[0029] Furthermore, the acid immersion treatment in step S10 removes the residual film removal solution, and the acid immersion treatment time ranges from 10 to 30 seconds.

[0030] Furthermore, the treatment temperature and concentration of the copper protective agent in step S11 can be adjusted and controlled, the treatment solution temperature range is 40.0 degrees ± 0.5 degrees, and the solution concentration range is 7.3-10.3 g / L.

[0031] Furthermore, the lead frame width produced and processed by the semiconductor lead frame electrolytic surface treatment device in step S12 is 50.0 mm-130.0 mm; the anode electrolysis equipment with a special structure and the electrolysis process are used, and the thickness of the metal film deposited by electrolysis is evenly distributed.

[0032] Furthermore, single metals electrolytically precipitated include nickel, rhodium, gold, cobalt, iron, silver, platinum, palladium, indium, ruthenium, tin, zinc and copper; it is also characterized in that the electrolytic binary metals include nickel tungsten, iron nickel, gold cobalt, gold nickel, phosphorus nickel, nickel tin, gold platinum, gold silver, silver tin, tin copper, tungsten copper, zinc copper and zinc tin; more specifically, the electrolytic ternary metals nickel gold tungsten, gold palladium nickel, nickel phosphorus tungsten, gold silver copper, gold silver tin, palladium nickel phosphorus, nickel tin copper, nickel cobalt palladium, copper nickel tungsten, gold tin copper, gold cobalt tungsten and gold nickel phosphorus can also be used to make high-performance semiconductor lead frame products according to special needs.

[0033] The beneficial effects of the present invention are:

[0034] 1. By adjusting the roughness of the metal surface, the bonding force between the metal material surface and the photosensitive dry film can be enhanced.

[0035] 2. By adjusting the mechanism control of the developing equipment, the uniformity of the developing is improved without affecting the normal progress of the subsequent processes.

[0036] 3. The etching solution spray pressure and spray angle of the etching device are adjusted to ensure that the etching accuracy meets the requirements of product specifications; in addition, the etching solution automatic adjustment device is used to keep the various chemical components of the etching solution stable for a long time, thereby ensuring the continuous stability of the product etching accuracy.

[0037] 4. Through the spray infiltration, spray dipping and spray impact of the demolding device, the phenomenon of foreign matter adhering to the etched product is greatly reduced.

[0038] 5. The electrolytic anode technology of the present invention makes the thickness of the electrolytic metal film of the semiconductor lead frame evenly distributed.

[0039] 6. The semiconductor lead frame etching manufacturing equipment provided above can manufacture and produce high-precision semiconductor lead frame etching products.

[0040] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0042] Figure 1 It is a specific step diagram of the method for manufacturing a semiconductor lead frame of the present invention;

[0043] Figure 2 It is a structural schematic diagram of the spray flow direction of the roughening process solution in step 1 of the method for manufacturing a semiconductor lead frame of the present invention;

[0044] Figure 3 It is a structural schematic diagram of a developing device of a method for manufacturing a semiconductor lead frame of the present invention;

[0045] Figure 4 It is a structural block diagram of the film stripping device of the present invention. DETAILED DESCRIPTION

[0046] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0047] Embodiment 1:

[0048] like Figure 1 As shown, the method for manufacturing a semiconductor lead frame comprises the following steps:

[0049] S1: The copper alloy material is cleaned until the oil, impurities and metal oxides on the surface are removed, and the surface is roughened and then dried. Step S1 uses a chemical impregnation method to prepare a copper alloy material with a suitable surface roughness, and the surface roughness range is 0.15-0.95μm. In this embodiment, the metal material 10 is a copper alloy coiled strip with a width of 350mm and a thickness of 0.13mm.

[0050] Among them, Figure 2 As shown, the cleaning and roughening treatment includes: the copper alloy coiled strip is subjected to ultrasonic degreasing, electrolytic degreasing, three water washings, five roughenings, three water washings, acid activation, three water washings, drying, and winding at a speed of 2 m / min in a horizontal manner. The metal oxides and grease stains on the surface of the metal material can be removed by the treatment steps, and the copper alloy coiled strip 110 with a suitable surface roughness can be obtained by micro-etching treatment of the roughening process device. In this embodiment, the possible range of micro-etching treatment of the roughening process is Ra0.15-0.95μm; the recommended suitable range is Ra0.12-0.78μm; the most suitable range is Ra0.19-0.63μm.

[0051] In this embodiment, the cleaning and roughening treatment has the following advantages: 1. Each roughening device is divided into four areas, with cross-directional spray flow; 2. The spray angle is adjustable; 3. The spray flow rate is adjustable; 4. At the intersection of two adjacent areas, the (reverse) spray flow of the solution can form a rotating liquid flow within a certain range. 5. The micro-etching solution is maintained stable under surface treatment conditions through automatic analysis and automatic addition equipment. 6. The solution mother tanks of the five roughening devices are independent, and the operating conditions can be set independently.

[0052] Then, the copper alloy coiled strip 110 is passed through a continuously operating film laminating device to paste a photosensitive dry film on both sides of the material to obtain a laminated intermediate material 120; the operating conditions must meet the requirements of uniform lamination and product specifications. The operating conditions for laminating the photosensitive dry film need to be implemented according to the technical requirements of the selected photosensitive dry film.

[0053] For the dry film material 120, a product pattern mask is used and a continuous laser exposure device S3 is used to perform exposure processing to transfer the product pattern to the photosensitive dry film to obtain an exposed intermediate material 130; the exposure condition parameters are implemented according to the technical requirements of the dry film.

[0054] like Figure 3As shown, the intermediate material 130 subjected to the exposure S4 treatment is passed through a continuous development equipment processing system of "horizontal discharge → three development steps → four water washing steps → acid washing → four water washing steps → drying" at a speed of 2 m / min. Through the infiltration, penetration, expansion and spray impact of the (reverse) spray flow developing solution, as well as the control of the solution spray pressure, the control of the developing solution temperature, the automatic analysis and automatic replenishment of the concentration of each component of the developing solution, and the control of the swing frequency of the developing spray mechanism, it takes a total of about 80-120 seconds to remove the photosensitive dry film in the non-exposed area, and further through S5 four water washing steps, acid washing, four water washing steps and drying, a semiconductor lead frame intermediate material 140 with a product structure pattern and a local photosensitive dry film on the surface of the copper alloy material is obtained.

[0055] The developing device includes: a developing tank device, which is divided into four areas; a developer spraying device, which has a spraying port, each area is unidirectional, and the two adjacent areas are arranged oppositely, so that the developer can be sprayed and flowed in opposite directions. A developer spraying pressure device, each area main pipeline is equipped with a pressure gauge, and the developer spraying pressure is adjustable and controllable. A developer temperature control device, the developer temperature of the mother tank is precisely controlled. A developer concentration automatic control device, the developer main component concentration is analyzed and automatically replenished at a fixed time.

[0056] In this embodiment, the recommended spray pressure range of the developing process is 0.3-1.3Pa, the better suitable range is 0.5-1.1Pa; the most suitable range is 0.7-1.0Pa; the developing solution spray speed range is 5.3-10.3L / min, the better suitable range is 5.7-10.0L / min, and the most suitable range is 6.0-9.7L / min.

[0057] S2: Evenly adhere a photosensitive dry film to the surface of the copper alloy material treated in step S1.

[0058] S3: Use the product pattern mask to perform exposure processing for 10-120 seconds through continuous processing equipment to transfer the product pattern to the photosensitive dry film.

[0059] S4: the copper alloy material subjected to the exposure treatment in S3 is continuously passed through the developing equipment processing system, and is subjected to spray wetting, spray penetration, spray expansion and spray impact of the developing solution for a processing time of 30-120 seconds, so as to process and remove the photosensitive dry film in the non-exposed area, and obtain a photosensitive dry film having a product structure pattern on the surface of the copper alloy material; the pressure and speed of the spray wetting, spray penetration, spray expansion and spray impact of the developing solution of the developing equipment processing system are set and controlled respectively, and the spray pressure range is 0.3-1.3Pa, and the spray speed range is 5.3-10.3L / min.

[0060] S5: The copper alloy material treated in step S4 is washed, acid-impregnated, washed, and dried to obtain a photosensitive dry film having a product structure pattern on the surface of the clean copper alloy material. The acid-impregnation treatment in step S5 removes the residual developing solution, and the acid-impregnation treatment time is 10-30 seconds.

[0061] S6: The copper alloy material treated in step S5 is continuously passed through an etching equipment processing system, and is subjected to pre-etching and etching solution spray wetting, spray dipping and spray impact, which takes a total of about 270-390 seconds to dissolve and remove the copper alloy area without exposed photosensitive dry film, thereby obtaining a continuous copper alloy material with an etching pattern; wherein the various parameters of the spray wetting, spray dipping and spray impact of the etching equipment processing system in step S6, such as pressure, speed and temperature, can be set and controlled separately to corrode the area on the surface of the metal copper alloy material that is not protected by the photosensitive dry film.

[0062] In this embodiment, in this embodiment, the copper alloy material 140 treated by S4 and S5 is horizontally run at a speed of 2m / min through the "acid pickling → three water washings → one pre-etching → six etchings → three water washings → three roughening → four water washings →" etching device processing system of S6, and undergoes spray wetting, spray immersion and spray impact of the etching solution, as well as control of the etching solution spray pressure, control of the etching solution temperature, automatic separation and automatic replenishment of the concentrations of each component of the etching solution, and control of the swing frequency of the etching spray mechanism. Under the conditions, a total of about 270-390 seconds of etching and dissolution treatment is required to remove the copper alloy area without exposed photosensitive dry film. The recommended injection pressure range of the etching process is 0.3-1.3Pa, the better range is 0.4-1.2Pa; the most suitable range is 0.5-1.1Pa; the developer solution injection speed range is 5.3-10.3L / min, the better range is 5.5-10.1L / min, the most suitable range is 5.7-9.9L / min, and the etching solution temperature range is 55.0 degrees ± 0.5 degrees. The processing time range of the etching process is 270-390 seconds, the better range is 280-380 seconds, and the most suitable range is 290-370 seconds.

[0063] S7: While the etching process is being carried out in step S6, the concentration of the etching solution is analyzed in real time by the automatic analysis and replenishment equipment of the etching solution, and the components of the etching solution are replenished in real time, so as to maintain a small range of variation in the concentration of the etching solution, thereby ensuring that the etching ability of the etching solution does not fluctuate greatly; wherein, in the etching equipment processing system of step S7, the concentrations of various active ingredients of the etching solution are automatically analyzed and automatically replenished, and the concentration control range of the active ingredients is: the set standard concentration ±5%.

[0064] S8: The copper alloy material treated by steps S6 and S7 is subjected to water washing, acid immersion treatment, water washing, and surface roughening to obtain a continuous copper alloy material with an etching pattern suitable for subsequent processes; wherein the temperature and solution flow rate of the surface roughening treatment process in step S8 can be adjusted and controlled, the solution flow rate range is 5.3-10.3 liters / minute, and the solution temperature control range is 40.0 degrees ± 0.5 degrees.

[0065] After etching treatments at S6 and S7, three water washes at S8, three micro-etchings and four water washes at a roughening process device, a copper alloy material 150 having an etched surface with suitable roughness and an etched pattern is obtained; the arithmetic average roughness range of the metal material surface of the embodiment is Ra0.19-0.79μm, the better suitable range is Ra0.21-0.75μm, and the most suitable range is Ra0.23-0.69μm.

[0066] S9: The continuous copper alloy material of the etching pattern processed in step S8 is continuously passed through the film removal equipment processing system, and the photosensitive dry film in the exposed area is removed through spray wetting, spray penetration, spray expansion and spray impact of the film removal solution, which takes a total of about 150-210 seconds to obtain an etched copper alloy material with a product structure pattern; wherein the pressure and speed of the spray wetting, spray penetration, spray expansion and spray impact of the film removal equipment processing system in step S9 can be set and controlled separately, and the spray pressure range is 0.3-1.3Pa, and the spray speed range is 5.3-10.3L / min.

[0067] In this embodiment, since the developed dry film and the undeveloped dry film react greatly differently with the stripping solution, the stripping solution needs to be composed of a solution with a stronger alkalinity.

[0068] like Figure 4 As shown, in this embodiment, the copper alloy material 150 treated by S8 is continued to pass through the "three-pass stripping → four-pass water washing → acid activation → four-pass water washing →" film removal device processing system of S9 at a speed of 2m / min in a horizontal operation. Through the spray wetting, spray penetration, spray expansion and spray impact of the stripping solution, as well as the pressure control of the stripping solution, the control of the flow rate, the automatic analysis and automatic replenishment of the concentration of each component of the stripping solution, and the synchronous operation of the removed film and the stripping solution under the automatic separation control device, a total of about 150-210 seconds of stripping and dissolving treatment is required to obtain a semiconductor lead frame etching product 160 with the photosensitive dry film in the exposure area removed.

[0069] S10: The copper alloy material treated by step S9 is subjected to water washing, acid immersion treatment, and water washing to obtain a continuous copper alloy material with an etching pattern suitable for subsequent processes; wherein the acid immersion treatment in step S10 removes the residual film removal solution, and the acid immersion treatment time ranges from 10 to 30 seconds.

[0070] S11: The continuous copper alloy material with the clean etching pattern obtained in S10 is treated with a copper protective agent, washed with water, dried and rolled up to obtain a continuous semiconductor lead frame etching semi-finished product; wherein, the treatment temperature and concentration of the copper protective agent in step S11 can be adjusted and controlled, the treatment solution temperature range is 40.0 degrees ± 0.5 degrees, and the solution concentration range is 7.3-10.3 g / L.

[0071] In this embodiment, the copper alloy material 160 processed by S9 is horizontally operated at a speed of 2 m / min and continues to pass through S10 and S11 "copper protection → four water washings → air drying → buffer winding" to obtain a semiconductor lead frame etching raw material 170.

[0072] S12: The semiconductor lead frame etching semi-finished product obtained in S11 is processed through a semiconductor lead frame electrolytic surface treatment device to prepare various precision lead frame products; the lead frame width produced and processed by the semiconductor lead frame electrolytic surface treatment device in step S12 is 50.0mm-130.0mm; using a special structure of anode electrolysis equipment and its electrolysis process, the thickness of the electrolytically precipitated metal film is evenly distributed.

[0073] In this embodiment, the single metals electrolytically precipitated include nickel, rhodium, gold, cobalt, iron, silver, platinum, palladium, indium, ruthenium, tin, zinc and copper; it is also characterized in that the electrolytic binary metals include nickel tungsten, iron nickel, gold cobalt, gold nickel, phosphorus nickel, nickel tin, gold platinum, gold silver, silver tin, tin copper, tungsten copper, zinc copper and zinc tin; more specifically, the electrolytic ternary metals nickel gold tungsten, gold palladium nickel, nickel phosphorus tungsten, gold silver copper, gold silver tin, palladium nickel phosphorus, nickel tin copper, nickel cobalt palladium, copper nickel tungsten, gold tin copper, gold cobalt tungsten and gold nickel phosphorus can also be used to make high-performance semiconductor lead frame products according to special needs.

[0074] like Figure 1 As shown, the copper alloy material 170 treated by S10 and S11 is processed at a speed of 3m / min through the "pretreatment → electrolytic nickel → electrolytic palladium → electrolytic gold → buffer winding" of S12 [lead frame nickel-palladium-gold surface treatment equipment] to obtain an electrolytic nickel-palladium-gold semiconductor lead frame product 180-1.

[0075] like Figure 1 As shown, the copper alloy material 170 treated by S10 and S11 is processed at a speed of 2m / min through the "pre-treatment → platen electrolytic silver → buffer winding" of S12 [lead frame platen silver surface treatment equipment] to obtain an electrolytic silver semiconductor lead frame product 180-2.

[0076] like Figure 1As shown, the copper alloy material 170 treated by S10 and S11 is processed at a speed of 5 m / min through S12 [lead frame continuous wheel silver plating surface treatment equipment] "pretreatment → electrolytic copper → electrolytic silver → electrolytic silver stripping → buffer winding" to obtain an electrolytic silver semiconductor lead frame product 180-3.

[0077] like Figure 1 As shown, the copper alloy material 170 treated by S10 and S11 is processed at a speed of 5 m / min through S12 [lead frame continuous wheel indium plating surface treatment equipment] "pretreatment → electrolytic copper → electrolytic indium → protective agent → buffer winding" to obtain an indium semiconductor lead frame product 180-4.

[0078] Various electrolytic metal semiconductor lead frame products 180-1 to 180-4 use specially structured anode electrolysis equipment and electrolysis processes to obtain electrolytic metal films with uniform thickness, which not only improves product performance but also saves metal, especially precious metal usage, thereby significantly reducing production costs.

[0079] In summary: by adjusting the roughness of the metal surface, the bonding force between the metal material surface and the photosensitive dry film can be enhanced. By adjusting the control mechanism of the developing equipment, the uniformity of the development is improved without affecting the normal progress of the subsequent process. By adjusting the injection pressure and injection angle of the etching solution of the etching device, the etching accuracy can meet the requirements of the product specifications; in addition, by the automatic adjustment device of the etching solution, the various chemical components of the etching solution can be kept stable for a long time, ensuring the continuous stability of the product etching accuracy. By the spray infiltration, spray dipping and spray impact of the demolding device, the phenomenon of foreign matter adhering to the etched product is greatly reduced. By the electrolytic anode technology of the present invention, the thickness distribution of the electrolytic metal film of the semiconductor lead frame is uniform. The semiconductor lead frame etching manufacturing equipment provided can manufacture and produce high-precision semiconductor lead frame etching products.

[0080] Embodiment 2:

[0081] like Figure 1 As shown, the difference from the embodiment is that the metal material 10 is a copper alloy coiled strip with a width of 108 mm and a thickness of 0.125 mm. After development, a semiconductor lead frame material Ag140 with a product structure pattern exposed on the surface of the copper alloy material is obtained, while the area not requiring electroplating is still covered with the exposed photosensitive dry film.

[0082] like Figure 1The Ag67 silver plating treatment shown is to obtain the semiconductor lead frame material Ag140 after the development treatment from S1 to S4 and S5 through "alkali activation → three water washings → six silver platings → three silver recovery → four water washings → drying →" to obtain the silver-plated semiconductor lead frame intermediate product 200.

[0083] like Figure 1 As shown, the post-cleaning production line will continue to run the copper alloy material 200 treated with Ag67 silver plating at a speed of 2m / min through the "three-pass stripping → four-pass water washing → acid activation → four-pass water washing →" film removal device processing system in a horizontal operation, through the stripping solution spray wetting, spray penetration, spray expansion and spray impact, as well as the stripping solution pressure control, flow rate control, automatic analysis and automatic replenishment of the concentration of each component of the stripping solution, and the synchronous operation of the stripped film and the stripping solution under the automatic separation control device. It takes a total of about 150-210 seconds of stripping and dissolving treatment to obtain the silver-plated semiconductor lead frame intermediate product Ag160 with all photosensitive dry films removed.

[0084] The silver-plated semiconductor lead frame intermediate product Ag160 with all photosensitive dry films removed is just the electrolytic precipitation of silver in the designated area of ​​the metal raw material. A series of processing processes such as film lamination, exposure, development, etching, and film stripping are repeated in the following steps to finally obtain the semiconductor lead frame product.

[0085] like Figure 1 As shown, the copper alloy material Ag160 treated by S9 is horizontally run at a speed of 2m / min and continues to pass through S10 and S11 "silver protection → four water washings → air drying → buffer winding" to obtain the silver-plated semiconductor lead frame etching intermediate product Ag170.

[0086] like Figure 1 As shown, the silver-plated semiconductor lead frame etching intermediate product Ag170 processed by S10 and S11 passes through the continuously running film pasting device of S2 at a speed of 2m / min, and a photosensitive dry film is pasted on both sides of the material to obtain the intermediate material Ag120 after film pasting.

[0087] like Figure 1 As shown, for the Ag120 dry film material, the product pattern is transferred to the photosensitive dry film by using the product pattern mask and the continuous laser exposure equipment S3 for exposure processing to obtain the exposed intermediate material Ag130; the exposure condition parameters are implemented according to the technical requirements of the dry film.

[0088] like Figure 1As shown, the intermediate material Ag130 treated by exposure S3 is passed through the "horizontal discharge → three developments → four water washings → acid washing → four water washings → drying" continuous development equipment processing system of S4 at a speed of 2m / min; after spray wetting, spray penetration, spray expansion and spray impact of the developing solution, as well as control of the solution spray pressure, control of the developing solution temperature, automatic analysis and automatic replenishment of the concentrations of each component of the developing solution, and control of the swing frequency of the developing spray mechanism, it takes a total of about 80-120 seconds to remove the photosensitive dry film in the non-exposed area, and further passes through S5 four water washings, acid washing, four water washings and drying to obtain a semiconductor lead frame silver-plated intermediate material Ag140 with a product structure pattern and a local photosensitive dry film on the surface of the copper alloy material.

[0089] like Figure 1 As shown, the copper alloy material 140 treated by S4 and S5 is horizontally moved at a speed of 2m / min through the "acid pickling → three water washings → one pre-etching → six etchings → three water washings → three roughenings → four water washings →" etching device processing system of S6. After the etching solution is sprayed wetting, sprayed dipping and sprayed impact, as well as the control of the etching solution spray pressure, the control of the etching solution temperature, the automatic separation and automatic replenishment of the concentrations of the various components of the etching solution, and the control of the swing frequency of the etching spray mechanism, a total of about 270-390 seconds of etching and dissolving treatment are required to remove the copper alloy area without exposed photosensitive dry film; while the etching treatment process is being carried out in step S6, the concentration of the chemical solution is analyzed in real time by the automatic analysis and automatic replenishment equipment of the etching solution in S7, and the chemical solution components are replenished in real time to maintain a small range of change in the concentration of the chemical solution, thereby ensuring that the etching ability of the chemical solution does not fluctuate greatly.

[0090] like Figure 1 As shown, after etching treatments at S6 and S7, three water washes at S8, and three micro-etchings and four water washes at a roughening process device, a copper alloy material Ag150 having an etched surface with a suitable roughness and an etched pattern is obtained; the arithmetic average roughness of the metal material surface of the embodiment can be controlled within Ra 0.19-0.23μm.

[0091] like Figure 1As shown, the copper alloy material Ag150 treated by S8 is continued to pass through the "three-pass stripping → four-pass water washing → acid activation → four-pass water washing →" film removal device processing system of S9 at a speed of 2m / min in a horizontal operation. Through the spray wetting, spray penetration, spray expansion and spray impact of the stripping solution, as well as the control of the pressure and flow rate of the stripping solution, the automatic analysis and automatic replenishment of the concentration of each component of the stripping solution, and the synchronous operation of the removed film and the stripping solution under the automatic separation control device, a total of about 150-210 seconds of stripping and dissolving treatment are required to obtain a semiconductor lead frame etching product Ag160 with the photosensitive dry film in the exposure area removed.

[0092] like Figure 1 As shown, the copper alloy material Ag160 treated by S9 is horizontally run at a speed of 2m / min and continues to pass through S10 and S11 "silver protection → four water washings → air drying → buffer winding" to obtain the semiconductor lead frame electrolytic silver frame etching product 210.

[0093] The various devices selected in this application are all universal standard parts or parts known to those skilled in the art, and their structures and principles can be known to those skilled in the art through technical manuals or conventional experimental methods.

[0094] In the description of the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0095] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0096] Based on the above ideal embodiments of the present invention, the relevant staff can make various changes and modifications without departing from the technical concept of the present invention through the above description. The technical scope of the present invention is not limited to the contents of the specification, and its technical scope must be determined according to the scope of the claims.

Claims

1. A method for manufacturing a semiconductor lead frame, characterized in that: The following steps are involved: S1: Clean the copper alloy material until the oil, impurities and metal oxides on the surface are removed, and then the surface is roughened and dried; S2: Evenly attaching a photosensitive dry film to the surface of the copper alloy material treated in step S1; S3: Use the product pattern mask to perform exposure treatment for 10-120 seconds through continuous processing equipment to transfer the product structure pattern to the photosensitive dry film; S4: the copper alloy material subjected to the exposure treatment in S3 is continuously passed through a developing device processing system, and is subjected to spray wetting, spray penetration, spray expansion and spray impact of a developing solution for a processing time of 30-120 seconds, so as to remove the photosensitive dry film in the non-exposed area, and obtain a photosensitive dry film having a product structure pattern on the surface of the copper alloy material; S5: washing the copper alloy material treated in step S4, acid-immersing, washing, and drying to obtain a photosensitive dry film having a product structure pattern on the surface of the clean copper alloy material; S6: the copper alloy material processed in step S5 is continuously passed through the etching equipment processing system, and is subjected to pre-etching and spray wetting, spray dipping and spray impact of the etching solution, which takes a total of 270-390 seconds to dissolve and remove the copper alloy area without the exposed photosensitive dry film, so as to obtain a continuous copper alloy material with an etching pattern; S7: while the etching process is being carried out in step S6, the concentration of the etching solution is analyzed in real time by the automatic analysis and replenishment equipment of the etching solution and the components of the etching solution are replenished in real time, so as to maintain a small variation range of the concentration of the etching solution, thereby ensuring that the etching capacity of the etching solution does not fluctuate greatly; S8: washing the copper alloy material treated in steps S6 and S7, acid immersion treatment, washing, and surface roughening to obtain a continuous copper alloy material with an etching pattern suitable for subsequent processes; S9: The continuous copper alloy material with the etching pattern processed in step S8 is continuously passed through the film removal equipment processing system, and the photosensitive dry film in the exposure area is removed by spray wetting, spray penetration, spray expansion and spray impact of the film removal solution for a total of 150-210 seconds to obtain an etched copper alloy material with a product structure pattern; S10: washing the copper alloy material treated in step S9, acid-immersing and washing the copper alloy material to obtain a continuous copper alloy material with an etching pattern suitable for subsequent processes; S11: treating the clean continuous copper alloy material with the etching pattern obtained in S10 with a copper protective agent, washing, drying and rolling up to obtain a continuous semiconductor lead frame etching semi-finished product; S12: The semi-finished product of the semiconductor lead frame obtained in S11 is etched and passed through a semiconductor lead frame electrolytic surface treatment device to obtain a precision lead frame.

2. The method for manufacturing a semiconductor lead frame according to claim 1, wherein: The step S1 adopts a chemical impregnation method to prepare a copper alloy material with a suitable surface roughness, and the surface roughness ranges from 0.15 to 0.95 μm.

3. The method for manufacturing a semiconductor lead frame according to claim 2, wherein: The pressure and speed of the spray wetting, spray penetration, spray expansion and spray impact of the developing solution of the developing equipment processing system in step S4 are set and controlled respectively, and the spray pressure range is 0.3-1.3Pa, and the spray speed range is 5.3-10.3L / min.

4. The method for manufacturing a semiconductor lead frame according to claim 3, wherein: The acid immersion treatment in step S5 removes the residual developing solution, and the acid immersion treatment time is 10-30 seconds.

5. The method for manufacturing a semiconductor lead frame according to claim 4, wherein: The various parameters of the jet wetting, jet dipping and jet impact of the etching equipment processing system in step S6, such as pressure, speed and temperature, can be set and controlled separately to corrode the area on the surface of the metal copper alloy material that is not protected by the photosensitive dry film. The jet pressure range is 0.3-1.3 Pa, the jet speed range is 5.3-10.3 L / min, and the etching solution temperature range is 55.0 degrees Celsius ± 0.5 degrees Celsius.

6. The method for manufacturing a semiconductor lead frame according to claim 5, wherein: In the etching equipment processing system of step S7, the concentrations of various active ingredients of the etching solution are automatically analyzed and automatically added, and the concentration control range of the active ingredients is: the set standard concentration ±5%.

7. The method for manufacturing a semiconductor lead frame according to claim 6, wherein: The temperature and solution flow rate of the surface roughening treatment process in step S8 can be adjusted and controlled, the solution flow rate range is 5.3-10.3 liters / minute, and the solution temperature control range is 40.0 degrees Celsius ± 0.5 degrees Celsius.

8. The method for manufacturing a semiconductor lead frame according to claim 7, wherein: The pressure and speed of the spray wetting, spray penetration, spray expansion and spray impact of the film removal equipment processing system in step S9 can be set and controlled separately, and the spray pressure range is 0.3-1.3Pa, and the spray speed range is 5.3-10.3L / min.

9. The method for manufacturing a semiconductor lead frame according to claim 8, wherein: The acid immersion treatment in step S10 removes the residual film removal solution, and the treatment time of the acid immersion is in the range of 10-30 seconds.

10. The method for manufacturing a semiconductor lead frame according to claim 9, wherein: The processing temperature and concentration of the copper protective agent in step S11 can be adjusted and controlled, the processing temperature range is 40.0 degrees Celsius ± 0.5 degrees Celsius, and the solution concentration range is 7.3-10.3 grams per liter.

11. The method for manufacturing a semiconductor lead frame according to claim 10, wherein: The lead frame width produced and processed by the semiconductor lead frame electrolytic surface treatment device in step S12 is 50.0 mm-130.0 mm.

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