A chip diode with adjustable PN junction contact area
By designing multiple independent P-type semiconductors in the patch diode and controlling their conduction by using conductive modules, the problem of a single structure of the existing patch diode is solved, and flexible adjustment of current magnitude and expansion of application scope is achieved.
Patent Information
- Application Number
- CN202210289031.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-03-22
- Publication Date
- 2025-08-12
- Estimated Expiration
- 2042-03-22
AI Technical Summary
The existing patch diode has a single structure and cannot adjust the forward conduction current according to different circuit scenarios. The scope of application is small.
A plurality of independent P-type semiconductors are designed and the conduction with the second pin is controlled through the conductive module to form a detachable combined structure. The user can adjust the number of conductive modules according to needs to adjust the contact area of the PN junction.
It realizes the flexible adjustment of the forward conduction current according to circuit requirements, and expands the scope of application.
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Figure CN114784085B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of diodes, and in particular to a chip diode with adjustable PN junction contact area. Background Art
[0002] A diode, also known as a crystal diode or simply a diode, is an electronic component with two electrodes that allows current to flow in only one direction. Many applications utilize its rectifying function. The most common function of a diode is to allow current to flow in only one direction, known as forward bias, while blocking current in the reverse direction is known as reverse bias. Therefore, a diode can be thought of as an electronic version of a check valve. A small amount of the trivalent element boron is doped into one region of a semiconductor, making it P-type, while a small amount of the pentavalent element phosphorus is doped into another region, making it N-type. At the junction of the P-type and N-type semiconductors, a PN junction is formed. A PN junction is a diode. The lead in the P region is called the anode, and the lead in the N region is called the cathode.
[0003] The area of the PN junction affects the forward current of a chip diode. Existing chip diodes typically consist of a single chip, cathode pin, and anode pin secured with solder paste, then plastic-encapsulated to create an insulated, molded body. This monolithic structure cannot be adjusted. Different forward currents are often required for different circuit scenarios, and this is often done by manufacturing different chip diode models. However, these diodes have a single structure and a limited range of applications. Summary of the Invention
[0004] To address the above issues, the present invention provides a surface-mount diode, which designs a P-type semiconductor into a multiple structure. Each P-type semiconductor is independent and its conduction is controlled by a conductive module. Users can adjust the number of installed conductive modules according to actual circuit requirements to adjust the size of the PN junction contact area, thereby adjusting the current size during forward conduction.
[0005] To achieve the above object, the present invention solves it through the following technical solutions:
[0006] A patch diode with adjustable PN junction contact area comprises an insulating plastic package, a chip located inside the insulating plastic package, and a first pin and a second pin integrally plastic-encapsulated with the insulating plastic package. The chip comprises an N-type semiconductor and a P-type semiconductor connected to the lower end of the N-type semiconductor. The first pin is connected to the upper end of the N-type semiconductor. The number of the P-type semiconductors is m, where m is greater than or equal to 2. A gap is formed between every two adjacent P-type semiconductors. The lower end of each P-type semiconductor is connected to a conductive sheet. A conductive module is connected between each conductive sheet and the second pin. The combined structure of the conductive module and the insulating plastic package is a detachable combined structure.
[0007] Specifically, the conductive module is a metal screw, and a screw hole matching the metal screw is formed at the lower end of the insulating plastic package.
[0008] Specifically, the lower end of the second pin is provided with an avoidance hole for the lower end of the conductive module to fully extend into.
[0009] Specifically, the first pin is connected to the N-type semiconductor via a first solder paste.
[0010] Specifically, the second pin is connected to the P-type semiconductor via a second solder paste.
[0011] Specifically, the upper end surface and four side surfaces of the insulating plastic package body are coated with a layer of waterproof film.
[0012] The beneficial effects of the present invention are:
[0013] The chip diode of the present invention is designed with a structure of no less than two P-type semiconductors. Each P-type semiconductor is independent and its own conductive module controls whether it is connected to the second pin. The user can adjust the number of installed conductive modules according to actual circuit requirements to adjust the size of the PN junction contact area, thereby adjusting the current size when the chip diode is forward-conducted. The structure is simple and has a wide range of applications. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 This is a top view of the chip diode of Example 1.
[0015] Figure 2 for Figure 1 Cross-section of the AA surface.
[0016] Figure 3 Schematic diagram of the internal structure of the chip diode of Example 1.
[0017] Figure 4 Schematic diagram of the internal structure of the chip diode of Example 2.
[0018] The figures are marked as follows: insulating plastic package 1, screw hole 11, chip 2, N-type semiconductor 21, P-type semiconductor 22, spacer 201, first pin 3, second pin 4, avoidance hole 41, conductive sheet 5, conductive module 6, first solder paste 7, second solder paste 8, waterproof film 9. DETAILED DESCRIPTION
[0019] The present invention will be described in further detail below with reference to examples and drawings, but the embodiments of the present invention are not limited thereto.
[0020] Example 1
[0021] like Figure 1-3 As shown:
[0022] A patch diode with adjustable PN junction contact area of this embodiment includes an insulating plastic package 1, a chip 2 located inside the insulating plastic package 1, a first pin 3 and a second pin 4 integrally molded with the insulating plastic package 1, the chip 2 includes an N-type semiconductor 21, a P-type semiconductor 22 connected to the lower end of the N-type semiconductor 21, the first pin 3 is connected to the upper end of the N-type semiconductor 21, the number of P-type semiconductors 22 is 2, and in order to make each P-type semiconductor 22 independent, a gap 201 is formed between the two P-type semiconductors 22, and the lower end of each P-type semiconductor 22 is connected to a conductive sheet 5, and the two conductive sheets 5 are connected. They do not contact each other. A conductive module 6 is connected between each conductive sheet 5 and the second pin 4. The conductive module 6 is a metal screw. A screw hole 11 that matches the metal screw is formed at the lower end of the insulating plastic package 1. The metal screw can be screwed into the screw hole 11 by a screwdriver. After the metal screw is fully screwed in, the metal screw contacts the conductive sheet 5 and the second pin 4 at the same time, thereby realizing electrical conduction between the conductive sheet 5 and the second pin 4. Users can install 1 or 2 conductive modules 6 according to actual circuit requirements. If the forward current of the chip diode is small, 1 conductive module 6 can be installed. If the forward current of the chip diode is large, 2 conductive modules 6 can be installed.
[0023] Preferably, in order to prevent the conductive module 6 from affecting the flatness of the bottom of the SMD diode, a relief hole 41 is provided at the lower end of the second pin 4 for the lower end of the conductive module 6 to fully extend into.
[0024] Preferably, the first pin 3 and the N-type semiconductor 21 are connected via a first solder paste 7 .
[0025] Preferably, the second pin 4 is connected to the P-type semiconductor 22 via a second solder paste 8 .
[0026] Preferably, in order to improve the waterproof capability of the upper end surface and the four side surfaces of the insulating plastic package body 1 , the upper end surface and the four side surfaces of the insulating plastic package body 1 are coated with a layer of waterproof film 9 .
[0027] Example 2
[0028] like Figure 4 As shown:
[0029] A patch diode with adjustable PN junction contact area of this embodiment includes an insulating plastic package 1, a chip 2 located inside the insulating plastic package 1, a first pin 3 and a second pin 4 integrally molded with the insulating plastic package 1, the chip 2 includes an N-type semiconductor 21, a P-type semiconductor 22 connected to the lower end of the N-type semiconductor 21, the first pin 3 is connected to the upper end of the N-type semiconductor 21, the number of the P-type semiconductors 22 is 4, and in order to make each P-type semiconductor 22 independent, a gap 201 is formed between each two P-type semiconductors 22, and the lower end of each P-type semiconductor 22 is connected to a conductive sheet 5, and each two conductive sheets 5 are connected to each other. There is no contact. A conductive module 6 is connected between each conductive sheet 5 and the second pin 4. The conductive module 6 is a metal screw. A screw hole 11 that matches the metal screw is formed at the lower end of the insulating plastic package 1. The metal screw can be screwed into the screw hole 11 by a screwdriver. After the metal screw is fully screwed in, the metal screw contacts the conductive sheet 5 and the second pin 4 at the same time, thereby realizing electrical conduction between the conductive sheet 5 and the second pin 4. Users can install more than one conductive module 6 according to actual circuit requirements. If the forward current of the chip diode is small, one or two conductive modules 6 can be installed. If the forward current of the chip diode is large, three or four conductive modules 6 can be installed.
[0030] The above examples merely illustrate two implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art would be able to make various modifications and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.
Claims
1. A chip diode with adjustable PN junction contact area, characterized in that: The invention comprises an insulating plastic package (1), a chip (2) located inside the insulating plastic package (1), a first pin (3) and a second pin (4) integrally plastic-molded with the insulating plastic package (1), the chip (2) comprising an N-type semiconductor (21) and a P-type semiconductor (22) connected to the lower end of the N-type semiconductor (21), the first pin (3) being connected to the upper end of the N-type semiconductor (21), the number of the P-type semiconductors (22) being m, m≥2, a gap (201) being formed between every two adjacent P-type semiconductors (22), the lower end of each P-type semiconductor (22) being connected to a conductive sheet (5), a conductive module (6) being connected between each conductive sheet (5) and the second pin (4), and the combined structure of the conductive module (6) and the insulating plastic package (1) being a detachable combined structure; The conductive module (6) is a metal screw, and a screw hole (11) matching the metal screw is formed at the lower end of the insulating plastic package body (1); The lower end of the second pin (4) is provided with an avoidance hole (41) for the lower end of the conductive module (6) to fully extend into; The upper end surface and four side surfaces of the insulating plastic package body (1) are coated with a layer of waterproof film (9).
2. A chip diode with adjustable PN junction contact area according to claim 1, characterized in that: The first pin (3) is connected to the N-type semiconductor (21) via a first solder paste (7).
3. The chip diode with adjustable PN junction contact area according to claim 1, characterized in that: The second pin (4) is connected to the P-type semiconductor (22) via a second solder paste (8).
Citation Information
Patent Citations
Multi-pin selectively-conducted SMD diode
CN212322978U
Common cathode and common anode parallel diode and the manufacturing method of the module thereof
KR100216736B1