Construction method of pressure sensor, pressure sensor, processor and electronic device
By designing a three-dimensional micro-nanostructure array as an elastic deformation layer and combining the assembly of the contact layer and the electrode layer, the problems of low sensitivity and narrow sensing range of the thin-film pressure sensor are solved, achieving a higher pressure sensing range and sensitivity.
Patent Information
- Application Number
- CN202210612546.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-05-31
- Publication Date
- 2024-12-20
- Estimated Expiration
- 2042-05-31
AI Technical Summary
The existing thin-film pressure sensors have low sensitivity and narrow pressure sensing range, which has failed to effectively solve this problem.
By determining the sensitivity and pressure sensing range of the sensor to be constructed, a three-dimensional micro-nanostructure array is designed as an elastic deformation layer, and combining the assembly of the contact layer, the first electrode layer and the second electrode layer, the sensitivity and pressure sensing range of the sensor are improved.
It significantly improves the pressure sensing range and sensitivity of the pressure sensor, solving the problems of traditional sensors with limited strain and narrow sensing range.
Smart Images

Figure CN114993524B_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of sensor technology, and in particular to a method for constructing a pressure sensor, a pressure sensor, a processor, and an electronic device. Background Art
[0002] In the field of Internet of Things technology, low-cost, low-power, high-performance sensors are needed to collect raw data. Pressure sensors are a type of IoT underlying hardware device that is widely used in industrial production, smart homes, wearable devices, and security monitoring.
[0003] There are two main types of thin-film pressure sensors in the related art: capacitive and resistive. The pressure sensor inserts an elastic film between two layers of metal electrodes. Under the action of external pressure, the elastic film deforms, that is, the thickness changes, thereby changing the distance between the two layers of metal electrodes. However, the elastic film of the thin-film pressure sensor in the related art has limited strain under stress, which limits the sensitivity of the sensor.
[0004] Currently, no effective solution has been proposed to address the problems of low sensitivity and narrow pressure sensing range of pressure sensors in related technologies. Summary of the invention
[0005] The main purpose of the present application is to provide a method for constructing a pressure sensor, a pressure sensor, a processor and an electronic device to solve the problems of low sensitivity and narrow pressure sensing range of the pressure sensor in the related art.
[0006] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a method for constructing a pressure sensor is provided. The method includes: determining the sensitivity and pressure sensing range of the pressure sensor to be constructed; determining a three-dimensional micro-nano structure array according to the sensitivity and pressure sensing range, and combining multiple three-dimensional micro-nano structure arrays into an elastic deformation layer; determining a contact layer, a first electrode layer, and a second electrode layer, and assembling the contact layer, the first electrode layer, the elastic deformation layer, and the second electrode layer in sequence in the longitudinal direction to obtain a pressure sensor.
[0007] Optionally, determining the three-dimensional micro-nano structure array by sensitivity and pressure sensing range includes: obtaining three-dimensional micro-nano structures of various geometric shapes; matching the geometric shapes of the various three-dimensional micro-nano structures with the sensitivity and pressure sensing range to obtain target three-dimensional micro-nano structures that match the sensitivity and pressure sensing range; arranging multiple target three-dimensional micro-nano structures into an initial three-dimensional micro-nano structure array, and adjusting the density and duty cycle of each target three-dimensional micro-nano structure in the initial three-dimensional micro-nano structure array to obtain a three-dimensional micro-nano structure array.
[0008] Optionally, combining multiple three-dimensional micro-nano structure arrays into an elastic deformation layer includes: arranging multiple three-dimensional micro-nano structure arrays in a preset manner, and covering the top and bottom of the arranged multiple three-dimensional micro-nano structure arrays with elastic films to obtain the elastic deformation layer.
[0009] Optionally, determining the first electrode layer and the second electrode layer includes: acquiring multiple electrode patterns; matching the multiple electrode patterns with the sensitivity and pressure sensing range to obtain a target electrode pattern that matches the sensitivity and pressure sensing range; generating multiple first electrode units according to the target electrode pattern, and constructing a first electrode layer through the multiple first electrode units; generating multiple second electrode units according to the target electrode pattern, and constructing a second electrode layer through the multiple second electrode units.
[0010] Optionally, constructing a first electrode layer using multiple first electrode units includes: arranging the multiple first electrode units in an array, and connecting all the first electrode units in each row of the array, respectively, to obtain the first electrode layer; constructing a second electrode layer using multiple second electrode units includes: arranging the multiple second electrode units in an array, and connecting all the second electrode units in each column of the array, respectively, to obtain the second electrode layer.
[0011] Optionally, the material of the three-dimensional micro-nanostructure array is a conductive material.
[0012] Optionally, the material of the three-dimensional micro-nano structure array is an insulating material.
[0013] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a pressure sensor is provided, characterized in that it includes: a first electrode layer, including a first insulating substrate, and a plurality of first electrode units arranged in a first arrangement manner above the first insulating substrate; an elastic deformation layer, arranged on the first electrode layer, including a first elastic film, a second elastic film, and a plurality of three-dimensional micro-nano structure units arranged between the first elastic film and the second elastic film; a second electrode layer, arranged on the elastic deformation layer, including a second insulating substrate, and a plurality of second electrode units arranged in a second arrangement manner below the second insulating substrate; a contact layer, arranged on the second electrode layer, including a substrate, and a plurality of protruding structures distributed on the substrate.
[0014] Optionally, each three-dimensional micro-nano structure unit is a three-dimensional micro-nano structure array composed of a plurality of three-dimensional micro-nano structures, and the plurality of three-dimensional micro-nano structures are arranged into the three-dimensional micro-nano structure array according to a preset density and a preset duty cycle.
[0015] Optionally, the three-dimensional micro-nano structure is a micro-nano scale structure, and the shape of the three-dimensional micro-nano structure is at least one of the following: a hemisphere, a cylinder, and a cone.
[0016] Optionally, the material of the three-dimensional micro-nano structure unit is an insulating material or a conductive material.
[0017] Optionally, the first arrangement method is to arrange the first electrode units in an array and connect all the first electrode units in each row of the array respectively, and the second arrangement method is to arrange the second electrode units in an array and connect all the second electrode units in each column of the array respectively.
[0018] Optionally, the electrode pattern of the first electrode unit matches the shape of the projection of the micro-nano structure unit, and the electrode pattern of the second electrode unit matches the shape of the projection of the micro-nano structure unit.
[0019] Optionally, the first electrode unit, the three-dimensional micro-nano structure unit, the second electrode unit and the protrusion-shaped structure correspond one to one in the vertical direction.
[0020] In order to achieve the above-mentioned purpose, according to another aspect of the present application, a device for constructing a pressure sensor is provided. The device includes: a first determination unit, used to determine the sensitivity and pressure sensing range of the pressure sensor to be constructed; a second determination unit, used to determine the three-dimensional micro-nano structure array through the sensitivity and pressure sensing range, and combine multiple three-dimensional micro-nano structure arrays into an elastic deformation layer; an assembly unit, used to determine the contact layer, the first electrode layer, the second electrode layer, and assemble the contact layer, the first electrode layer, the elastic deformation layer and the second electrode layer in sequence in the longitudinal direction to obtain a pressure sensor.
[0021] Through this application, the following steps are adopted: determine the sensitivity and pressure sensing range of the pressure sensor to be constructed; determine the three-dimensional micro-nano structure array through the sensitivity and pressure sensing range, and combine multiple three-dimensional micro-nano structure arrays into an elastic deformation layer; determine the contact layer, the first electrode layer and the second electrode layer, and assemble the contact layer, the first electrode layer, the elastic deformation layer and the second electrode layer in sequence in the longitudinal direction to obtain a pressure sensor, which solves the problem of low sensitivity and narrow pressure sensing range of the pressure sensor in the related art. By designing the three-dimensional micro-nano structure in the elastic deformation layer corresponding to the sensor to be constructed, the three-dimensional micro-nano structure matches the required sensitivity and pressure sensing range, thereby achieving the effect of improving the pressure sensing range and sensitivity of the pressure sensor. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:
[0023] Figure 1 is a flow chart of a method for constructing a pressure sensor provided in an embodiment of the present application;
[0024] FIG. 2( a ) is a schematic diagram of a three-dimensional micro-nanostructure array provided according to an embodiment of the present application. Figure 1 ;
[0025] FIG2( b ) is a second schematic diagram of a three-dimensional micro-nanostructure array provided according to an embodiment of the present application;
[0026] FIG. 3( a ) is a schematic diagram showing a comparison between a response characteristic curve of a pressure sensor provided according to an embodiment of the present application and a response characteristic curve of a conventional pressure sensor. Figure 1 ;
[0027] FIG3( b ) is a second schematic diagram comparing a response characteristic curve of a pressure sensor provided according to an embodiment of the present application with a response characteristic curve of a conventional pressure sensor;
[0028] Figure 4 is a schematic diagram of the structure of a pressure sensor provided according to an embodiment of the present application;
[0029] Figure 5 is a schematic structural diagram of a pressure sensing unit in a pressure sensor provided according to an embodiment of the present application;
[0030] Figure 6 is a schematic diagram of a construction device of a pressure sensor provided according to an embodiment of the present application;
[0031] Figure 7 is a schematic diagram of an electronic device provided according to an embodiment of the present application.
[0032] Wherein, 1-first electrode layer, 11-first insulating substrate, 12-first electrode unit;
[0033] 2-elastic deformation layer, 21-three-dimensional micro-nano structure unit, 22-first elastic film, 23-second elastic film, 211-three-dimensional micro-nano structure;
[0034] 3-second electrode layer, 31-second insulating substrate, 32-second electrode unit;
[0035] 4-contact layer, 41-substrate, 42-protrusion structure. DETAILED DESCRIPTION
[0036] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
[0037] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.
[0038] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.
[0039] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data for display, data for analysis, etc.) involved in this disclosure are all information and data authorized by the user or fully authorized by all parties.
[0040] The present invention is described below in conjunction with preferred implementation steps. Figure 1 is a flow chart of a method for constructing a pressure sensor according to an embodiment of the present application, such as Figure 1 As shown, the method comprises the following steps:
[0041] Step S101, determining the sensitivity and pressure sensing range of the pressure sensor to be constructed.
[0042] Specifically, the pressure sensor to be constructed can be a sensor on a wearable device. In order to make the wearable device more flexible, a pressure sensor with higher sensitivity and larger pressure sensing range is required. When constructing the pressure sensor, the sensitivity and pressure sensing range required by the wearable device are determined.
[0043] Step S102 : determining a three-dimensional micro-nano structure array by sensitivity and pressure sensing range, and combining a plurality of three-dimensional micro-nano structure arrays into an elastic deformation layer.
[0044] Specifically, since the sensitivity and pressure sensing range of pressure sensors designed according to different three-dimensional micro-nanostructure arrays are different, after determining the sensitivity and pressure sensing range, the three-dimensional micro-nanostructure array matching the wearable device is determined according to the sensitivity and pressure sensing range.
[0045] Step S103, determining a contact layer, a first electrode layer and a second electrode layer, and assembling the contact layer, the first electrode layer, the elastic deformation layer and the second electrode layer in sequence in the longitudinal direction to obtain a pressure sensor.
[0046] Specifically, the contact layer can be a flexible structural layer that contacts the human body and conducts pressure. For example, when a person presses or holds the wearable device, the contact layer transfers the pressure to the elastic deformation layer. The first electrode layer and the second electrode layer form a capacitor. The elastic deformation layer is located between the first electrode layer and the second electrode layer. When the contact layer transfers the pressure to the elastic deformation layer, the elastic deformation layer is compressed and elastically deformed, changing the distance between the first electrode layer and the second electrode layer, thereby changing the capacitance and generating a corresponding electrical signal.
[0047] The construction method of the pressure sensor provided in the embodiment of the present application determines the sensitivity and pressure sensing range of the pressure sensor to be constructed; determines the three-dimensional micro-nano structure array through the sensitivity and pressure sensing range, and combines multiple three-dimensional micro-nano structure arrays into an elastic deformation layer; determines the contact layer, the first electrode layer and the second electrode layer, and assembles the contact layer, the first electrode layer, the elastic deformation layer and the second electrode layer in sequence in the longitudinal direction to obtain a pressure sensor, which solves the problem of low sensitivity and narrow pressure sensing range of the pressure sensor in the related art. By designing the three-dimensional micro-nano structure in the elastic deformation layer corresponding to the sensor to be constructed, the three-dimensional micro-nano structure matches the required sensitivity and pressure sensing range, thereby achieving the effect of improving the pressure sensing range and sensitivity of the pressure sensor.
[0048] When constructing a pressure sensor, the corresponding three-dimensional microstructure array is first determined according to the sensitivity and pressure sensing range. Optionally, in the construction method of the pressure sensor provided in the embodiment of the present application, determining the three-dimensional micro-nanostructure array by the sensitivity and pressure sensing range includes: obtaining three-dimensional micro-nanostructures of various geometric shapes; matching the geometric shapes of the various three-dimensional micro-nanostructures with the sensitivity and pressure sensing range to obtain target three-dimensional micro-nanostructures matching the sensitivity and pressure sensing range; arranging multiple target three-dimensional micro-nanostructures into an initial three-dimensional micro-nanostructure array, and adjusting the density and duty cycle of each target three-dimensional micro-nanostructure in the initial three-dimensional micro-nanostructure array to obtain a three-dimensional micro-nanostructure array.
[0049] Specifically, the geometric shape of the three-dimensional micro-nano structure includes at least a hemisphere, a pyramid-shaped cone and a cylinder. Three-dimensional micro-nano structures of different geometric shapes correspond to different sensitivity sizes and pressure sensing ranges. By performing simulation tests in the software, the sensitivity and pressure sensing range required by the pressure sensor to be constructed are matched with the three-dimensional micro-nano structures of different geometric shapes, and the target three-dimensional micro-nano structure that meets the sensitivity and pressure sensing range requirements is determined. The multiple target three-dimensional micro-nano structures are arranged into an initial three-dimensional micro-nano structure array. Since the density and duty cycle of the initial three-dimensional micro-nano structure array will also affect the sensitivity and pressure sensing range, the density and duty cycle of the initial three-dimensional micro-nano structure array are adjusted according to the sensitivity and pressure sensing range requirements during the simulation test to obtain a three-dimensional micro-nano structure array model that meets the requirements, and the three-dimensional micro-nano structure array model is 3D printed to obtain a three-dimensional micro-nano structure array. By determining the three-dimensional micro-nano structure array that matches the sensitivity and pressure sensing range of the pressure sensor to be constructed, the structure of the elastic deformation layer of the pressure sensor can be changed, thereby improving the sensitivity and pressure sensing range of the pressure sensor.
[0050] It should be noted that when printing a three-dimensional micro-nano structure array, a general three-dimensional model is generated using three-dimensional design software, and the model height is determined to be Z. The three-dimensional model is then sliced along the height direction at a certain distance interval dz to form N = Z / dz layers of two-dimensional images, and each layer of the image contains the contour information of the three-dimensional model. By filling the area surrounded by the contour, the pattern information to be printed on each layer can be formed. The pattern information is used to prepare the designed three-dimensional microstructure through an optical three-dimensional micro-nano printing device. By designing the geometric morphology of the three-dimensional microstructure, various microstructures can be flexibly prepared. For example, Figure 2(a) is a schematic diagram of a three-dimensional micro-nano structure array provided according to an embodiment of the present application. Figure 1 FIG. 2( b ) is a second schematic diagram of a three-dimensional micro-nanostructure array provided according to an embodiment of the present application.
[0051] After determining the three-dimensional micro-nano structure array, the three-dimensional micro-nano structure array needs to be assembled into an elastic deformation layer. Optionally, in the construction method of the pressure sensor provided in the embodiment of the present application, multiple three-dimensional micro-nano structure arrays are combined into an elastic deformation layer, including: arranging multiple three-dimensional micro-nano structure arrays in a preset manner, and covering the top and bottom of the arranged multiple three-dimensional micro-nano structure arrays with an elastic film to obtain an elastic deformation layer.
[0052] Specifically, the preset mode can be a 9 by 9 rectangular array, the elastic film is used to protect the three-dimensional micro-nano structure array, each three-dimensional micro-nano structure array is a unit in the rectangular array, corresponding to a convex structure of the contact layer, and the elastic deformation layer is obtained by covering the top and bottom of the three-dimensional micro-nano structure array with an elastic film. The elastic deformation layer constructed in the embodiment of the present application can meet the requirements of high sensitivity and wide pressure sensing range.
[0053] After the elastic deformation layer is constructed, it is necessary to determine the first electrode layer and the second electrode layer of the pressure sensor. Optionally, in the construction method of the pressure sensor provided in the embodiment of the present application, determining the first electrode layer and the second electrode layer includes: obtaining a plurality of electrode patterns; matching the plurality of electrode patterns with the sensitivity and pressure sensing range to obtain a target electrode pattern matching the sensitivity and pressure sensing range; generating a plurality of first electrode units according to the target electrode pattern, and constructing a first electrode layer through the plurality of first electrode units; generating a plurality of second electrode units according to the target electrode pattern, and constructing a second electrode layer through the plurality of second electrode units.
[0054] Specifically, the various electrode patterns include at least rectangles, circles, and triangles. Different electrode patterns have different effects on sensitivity and pressure sensing range. Therefore, it is necessary to match the electrode pattern that meets the sensitivity and pressure sensing range requirements. For example, the target electrode pattern can be a rectangle. The first electrode layer and the second electrode layer use PET as a flexible substrate material. The electrode pattern is etched or sprayed on the first electrode layer and the second electrode layer using the process of etching or spraying ITO (Indium Tin Oxides, nano indium tin metal oxide). Each electrode pattern corresponds to a first electrode unit and a second electrode unit. Each first electrode unit and second electrode unit corresponds to a convex structure of the three-dimensional micro-nanostructure array and the contact layer, forming a pressure sensing unit. By determining the first electrode layer and the second electrode layer corresponding to the elastic deformation layer, the preliminary construction of the pressure sensor is achieved.
[0055] In addition to determining the electrode pattern when constructing the first electrode layer and the second electrode layer, it is also necessary to determine the connectivity relationship between the electrode units. Optionally, in the method for constructing a pressure sensor provided in an embodiment of the present application, constructing the first electrode layer through multiple first electrode units includes: arranging the multiple first electrode units in an array, and connecting all the first electrode units in each row of the array, respectively, to obtain the first electrode layer; constructing the second electrode layer through multiple second electrode units includes: arranging the multiple second electrode units in an array, and connecting all the second electrode units in each column of the array, respectively, to obtain the second electrode layer.
[0056] Specifically, the first electrode units in the first electrode layer are arranged in the same array as the elastic deformation layer, and the electrode units in each row are connected, so that the first electrode layer transmits the electrical signals of the electrode units in each row, and the second electrode units in the second electrode layer are arranged in the same array as the elastic deformation layer, and the electrode units in each column are connected, so that the second electrode layer transmits the electrical signals of the electrode units in each column. For example, the rectangular array of the elastic deformation layer is a 9-by-9 array, and when the pressure of the contact layer is transmitted to the elastic deformation layer, the three-dimensional micro-nano structure array corresponding to the convex structure of the contact layer under pressure in the rectangular array of the elastic deformation layer undergoes elastic deformation, thereby causing the electrical signals of the first electrode unit and the second electrode unit corresponding to the three-dimensional micro-nano structure array to change, the electrical signals of the electrode units in the row where the first electrode unit is located transmitted by the first electrode layer change, and the electrical signals of the electrode units in the column where the second electrode unit is located transmitted by the second electrode layer change. After receiving the electrical signals of the electrode units in each row transmitted by the first electrode layer and the electrical signals of the electrode units in each column transmitted by the second electrode layer, the test device of the pressure sensor determines the position where the electrical signals change and obtains the corresponding pressure measurement value. The measured value of each pressure sensing unit on the pressure sensor is accessed in a circuit scanning manner by determining the connectivity relationship between the electrode units.
[0057] Optionally, in the method for constructing a pressure sensor provided in an embodiment of the present application, the material of the three-dimensional micro-nanostructure array is a conductive material.
[0058] Specifically, the material of the three-dimensional micro-nanostructure array is a photosensitive material. By adding precious metal (gold, silver, copper) nanowires, graphene, carbon black and other materials to the photosensitive material, the originally insulating three-dimensional micro-nanostructure can be converted into a conductor, and then the working mode can be changed from a capacitive pressure sensor to a resistive pressure sensor.
[0059] Optionally, in the method for constructing a pressure sensor provided in an embodiment of the present application, the material of the three-dimensional micro-nanostructure array is an insulating material.
[0060] Specifically, the material of the three-dimensional micro-nanostructure array is an insulating photosensitive material, and the working mode of the pressure sensor is capacitive.
[0061] By applying different external forces to the pressure sensor and measuring the change in the capacitance value of the pressure sensor, the corresponding response characteristic curve of the pressure sensor can be obtained. Figure 3(a) is a schematic diagram showing the comparison between the response characteristic curve of the pressure sensor provided according to the embodiment of the present application and the response characteristic curve of the traditional pressure sensor. Figure 1, the upper curve represents the response characteristic curve of the pressure sensor corresponding to the embodiment of the present application, and the lower curve represents the response characteristic curve of the traditional pressure sensor. The slope of the curve represents the sensitivity of the pressure sensor. Compared with the traditional pressure sensor, the sensitivity has been significantly improved. Figure 3(b) is a second schematic diagram comparing the response characteristic curve of the pressure sensor provided according to the embodiment of the present application with the response characteristic curve of the traditional pressure sensor. Figure 3(b) is the simulation comparison result, which is the same as the measured comparison result in Figure 3(a).
[0062] Figure 4 is a schematic diagram of the structure of a pressure sensor provided according to an embodiment of the present application, such as Figure 4 As shown, the pressure sensor comprises:
[0063] The first electrode layer 1 includes a first insulating substrate 11 and a plurality of first electrode units 12 arranged in a first arrangement manner on the first insulating substrate 11 .
[0064] Specifically, the first insulating substrate 11 may be a substrate made of PET (polyethylene terephthalate) flexible substrate material, and the first arrangement manner may be to arrange the plurality of first electrode units 12 into a rectangular array and connect the plurality of first electrode units in each row.
[0065] The elastic deformation layer 2 is disposed on the first electrode layer 1 , and includes a first elastic film 22 , a second elastic film 23 , and a plurality of three-dimensional micro-nano structure units 21 disposed between the first elastic film 22 and the second elastic film 23 .
[0066] Specifically, the elastic deformation layer 2 covers the first electrode layer 1, and the three-dimensional micro-nano structure unit 21 is wrapped by the first elastic film 22 and the second elastic film 23 to play a protective and supporting role. The three-dimensional micro-nano structure unit 21 is mainly composed of PDMS (polydimethylsiloxane) photosensitive material, such as VDT 954 model PDMS material, and is printed on the PDMS material by an optical three-dimensional micro-nano printing device.
[0067] The second electrode layer 3 is disposed on the elastic deformation layer 2 and includes a second insulating substrate 31 and a plurality of second electrode units 32 arranged in a second arrangement manner below the second insulating substrate 31 .
[0068] Specifically, the second electrode layer 3 covers the elastic deformation layer 2, the second insulating substrate 31 can be a substrate made of PET flexible substrate material, and the second arrangement method can be to arrange multiple second electrode units 32 into a rectangular array and connect the second electrode units in each column.
[0069] The contact layer 4 is disposed on the second electrode layer 3 , and includes a substrate 41 and a plurality of protrusion-shaped structures 42 distributed on the substrate 41 .
[0070] Specifically, the contact layer 4 covers the second electrode layer 3, and the contact layer 4 can be a PDMS material. The contact layer 4 is obtained by printing a protruding structure 42 on a substrate 41. The protruding structure 42 is used to transmit pressure, and the protruding structure 42 corresponds to the three-dimensional micro-nano structure unit 21.
[0071] The pressure sensor provided in the embodiment of the present application achieves the effect of improving the pressure sensing range and sensitivity of the pressure sensor by designing a three-dimensional micro-nano structure in the elastic deformation layer corresponding to the sensor to be constructed, and matching the required sensitivity and pressure sensing range by the three-dimensional micro-nano structure.
[0072] The three-dimensional micro-nano structure unit 21 is composed of a plurality of three-dimensional micro-nano structures 211 . Optionally, in the pressure sensor provided by the embodiment of the present invention, each three-dimensional micro-nano structure unit 21 is a three-dimensional micro-nano structure array composed of a plurality of three-dimensional micro-nano structures 211 .
[0073] Specifically, the three-dimensional micro-nano structure 211 may be a cylindrical structure, and the elastic deformation range that the cylindrical structure can withstand is wider than the elastic deformation layer of the undesigned structure.
[0074] The shape of the three-dimensional micro-nano structure can be flexibly selected according to the sensitivity requirements and pressure sensing range requirements of the pressure sensor. Optionally, the three-dimensional micro-nano structure is a micro-nano scale structure, and the shape of the three-dimensional micro-nano structure is at least one of the following: a hemisphere, a cylinder and a cone.
[0075] Specifically, the geometrical shapes of the three-dimensional micro-nano structure 211 include at least a hemisphere, a cone, and a cylinder. Three-dimensional micro-nano structures of different geometrical shapes correspond to different sensitivity sizes and pressure sensing ranges. By performing simulation tests in the software, the sensitivity and pressure sensing range required by the pressure sensor to be constructed are matched with the three-dimensional micro-nano structures 211 of different geometrical shapes, and the target three-dimensional micro-nano structure that meets the sensitivity and pressure sensing range requirements is determined. The target three-dimensional micro-nano structure designed according to the requirements can significantly improve the sensitivity and pressure sensing range of the sensing layer to the pressure applied by the outside world. At the same time, the response characteristics of the sensing layer to pressure can be effectively tuned by designing the three-dimensional geometrical morphology, density, duty cycle and other parameters of the three-dimensional micro-nano structure array.
[0076] Optionally, the material of the three-dimensional micro-nano structure unit 21 is an insulating material or a conductive material.
[0077] Specifically, the material of the three-dimensional micro-nanostructure array is a photosensitive material. By adding precious metal (gold, silver, copper) nanowires, graphene, carbon black and other materials to the photosensitive material, the originally insulating three-dimensional micro-nanostructure unit 21 can be converted into a conductor, and then the working mode can be changed from a capacitive pressure sensor to a resistive pressure sensor.
[0078] The first electrode layer 1 and the first electrode unit 12 and the second electrode unit 32 of the second electrode layer 3 of the pressure sensor are arranged in a preset arrangement. Optionally, in the pressure sensor provided in the embodiment of the present application, the first arrangement is to arrange the first electrode unit 12 in an array, and connect all the first electrode units 12 in each row of the array respectively; the second arrangement is to arrange the second electrode unit 32 in an array, and connect all the second electrode units 32 in each column of the array respectively.
[0079] Specifically, the first electrode units 12 in the first electrode layer 1 are arranged in the same array as the elastic deformation layer, and the first electrode units 12 in each row are connected, so that the first electrode layer 1 transmits the electrical signals of the first electrode units 12 in each row, and the second electrode units 32 in the second electrode layer 3 are arranged in the same array as the elastic deformation layer, and the second electrode units 32 in each column are connected, so that the second electrode layer 3 transmits the electrical signals of the second electrode units 32 in each column. For example, the rectangular array of the elastic deformation layer is a 9 by 9 array. When the pressure of the contact layer is transmitted to the elastic deformation layer, the three-dimensional micro-nano structure array corresponding to the convex structure of the contact layer under pressure in the rectangular array of the elastic deformation layer undergoes elastic deformation, thereby causing the electrical signals of the first electrode unit 12 and the second electrode unit 32 corresponding to the three-dimensional micro-nano structure array to change, the electrical signal of the first electrode unit 12 in the row where the first electrode unit 12 is located transmitted by the first electrode layer 1 changes, and the electrical signal of the second electrode unit 32 in the column where the second electrode unit 32 is located transmitted by the second electrode layer 3 changes. After receiving the electrical signal of the first electrode unit 12 in each row transmitted by the first electrode layer 1 and the electrical signal of the second electrode unit 32 in each column transmitted by the second electrode layer 3, the test device of the pressure sensor determines the position where the electrical signal changes and obtains the corresponding pressure measurement value. The measurement value of each pressure sensing unit on the pressure sensor is accessed in a circuit scanning manner by determining the connectivity relationship between the electrode units.
[0080] Optionally, the first electrode unit, the three-dimensional micro-nano structure unit, the second electrode unit and the protrusion-shaped structure correspond one to one in the vertical direction.
[0081] Specifically, specifically, Figure 5 is a schematic diagram of the structure of a pressure sensing unit in a pressure sensor provided in an embodiment of the present application, such as Figure 5As shown, each first electrode unit 12, second electrode unit 32, three-dimensional micro-nano structure unit 21 and a protruding structure 42 of the contact layer correspond to each other, forming a pressure sensing unit for transmitting pressure.
[0082] The various layers of the pressure sensing unit correspond one to one. Optionally, in the pressure sensor provided in the embodiment of the present application, the electrode pattern of the first electrode unit 12 matches the shape of the projection of the three-dimensional micro-nano structure unit 21, and the electrode pattern of the second electrode unit 32 matches the shape of the projection of the three-dimensional micro-nano structure unit 21.
[0083] Specifically, Figure 6 As shown, each pressure sensing unit is mainly composed of a first electrode unit 12, a second electrode unit 32, a three-dimensional micro-nano structure unit 21, a first elastic film 22 and a second elastic film 23 that are opposite to each other in the vertical direction, and the positions of the first electrode unit 12, the second electrode unit 32, the three-dimensional micro-nano structure unit 21, the first elastic film 22 and the second elastic film 23 that carry the three-dimensional micro-nano structure unit 21 correspond to each other.
[0084] It should be noted that the steps shown in the flowcharts of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and that, although a logical order is shown in the flowcharts, in some cases, the steps shown or described can be executed in an order different from that shown here.
[0085] The embodiment of the present application also provides a device for constructing a pressure sensor. It should be noted that the device for constructing a pressure sensor in the embodiment of the present application can be used to execute the method for constructing a pressure sensor provided in the embodiment of the present application. The device for constructing a pressure sensor provided in the embodiment of the present application is introduced below.
[0086] Figure 6 Schematic diagram of a construction device of a pressure sensor provided in an embodiment of the present application. Figure 6 As shown, the device comprises:
[0087] A first determining unit 10, used to determine the sensitivity and pressure sensing range of the pressure sensor to be constructed;
[0088] A second determination unit 20 is used to determine the three-dimensional micro-nano structure array by sensitivity and pressure sensing range, and combine multiple three-dimensional micro-nano structure arrays into an elastic deformation layer;
[0089] The assembling unit 30 is used to determine the contact layer, the first electrode layer and the second electrode layer, and assemble the contact layer, the first electrode layer, the elastic deformation layer and the second electrode layer in sequence in the longitudinal direction to obtain a pressure sensor.
[0090] The pressure sensor construction device provided in the embodiment of the present application determines the sensitivity and pressure sensing range of the pressure sensor to be constructed through the first determination unit 10; the second determination unit 20 determines the three-dimensional micro-nano structure array through the sensitivity and pressure sensing range, and combines multiple three-dimensional micro-nano structure arrays into an elastic deformation layer; the assembly unit 30 determines the contact layer, the first electrode layer, the second electrode layer, and the contact layer, the first electrode layer, the elastic deformation layer and the second electrode layer in sequence in the longitudinal direction to obtain a pressure sensor, which solves the problem of low sensitivity and narrow pressure sensing range of the pressure sensor in the related art, and by designing the three-dimensional micro-nano structure in the elastic deformation layer corresponding to the sensor to be constructed, the three-dimensional micro-nano structure matches the required sensitivity and pressure sensing range, thereby achieving the effect of improving the pressure sensing range and sensitivity of the pressure sensor.
[0091] Optionally, in the construction device of the pressure sensor provided in the embodiment of the present application, the second determination unit 20 includes: a first acquisition module, used to acquire three-dimensional micro-nano structures of various geometric shapes; a first matching module, used to match the geometric shapes of the various three-dimensional micro-nano structures with the sensitivity and pressure sensing range to obtain a target three-dimensional micro-nano structure that matches the sensitivity and pressure sensing range; a first arrangement module, used to arrange multiple target three-dimensional micro-nano structures into an initial three-dimensional micro-nano structure array, and adjust the density and duty cycle of each target three-dimensional micro-nano structure in the initial three-dimensional micro-nano structure array to obtain a three-dimensional micro-nano structure array.
[0092] Optionally, in the construction device of the pressure sensor provided in the embodiment of the present application, the second determination unit 20 also includes: a second arrangement module, which is used to arrange multiple three-dimensional micro-nano structure arrays in a preset manner, and cover the top and bottom of the arranged multiple three-dimensional micro-nano structure arrays with an elastic film to obtain an elastic deformation layer.
[0093] Optionally, in the construction device of the pressure sensor provided in the embodiment of the present application, the assembly unit 30 includes: a second acquisition module, used to acquire multiple electrode patterns; a second matching module, used to match the multiple electrode patterns with the sensitivity and pressure sensing range to obtain a target electrode pattern that matches the sensitivity and pressure sensing range; a first construction module, used to generate multiple first electrode units according to the target electrode pattern, and construct a first electrode layer through the multiple first electrode units; a second construction module, used to generate multiple second electrode units according to the target electrode pattern, and construct a second electrode layer through the multiple second electrode units.
[0094] Optionally, in the construction device of the pressure sensor provided in the embodiment of the present application, the first construction module includes: a first arrangement submodule, used to arrange multiple first electrode units in an array, and connect all the first electrode units in each row of the array respectively to obtain a first electrode layer; the second construction module includes: a second arrangement submodule, used to arrange multiple second electrode units in an array, and connect all the second electrode units in each column of the array respectively to obtain a second electrode layer.
[0095] Optionally, in the device for constructing a pressure sensor provided in an embodiment of the present application, the material of the three-dimensional micro-nanostructure array is a conductive material.
[0096] Optionally, in the construction device of the pressure sensor provided in the embodiment of the present application, the material of the three-dimensional micro-nanostructure array is an insulating material.
[0097] The construction device of the pressure sensor includes a processor and a memory. The first determination unit 10, the second determination unit 20 and the assembly unit 30 are all stored in the memory as program units, and the processor executes the program units stored in the memory to realize corresponding functions.
[0098] The processor includes a kernel, which retrieves the corresponding program unit from the memory. One or more kernels can be set, and the pressure sensing range and sensitivity of the pressure sensor can be improved by adjusting the kernel parameters.
[0099] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM, and the memory includes at least one memory chip.
[0100] An embodiment of the present invention provides a computer-readable storage medium on which a program is stored. When the program is executed by a processor, the method for constructing the pressure sensor is implemented.
[0101] An embodiment of the present invention provides a processor, which is used to run a program, wherein the method for constructing the pressure sensor is executed when the program is run.
[0102] like Figure 7 As shown, an embodiment of the present invention provides an electronic device, wherein the device 701 includes a processor, a memory, and a program stored in the memory and executable on the processor, and the pressure sensor is constructed when the processor executes the program. The device in this article may be a server, a PC, a PAD, a mobile phone, etc.
[0103] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program code.
[0104] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.
[0105] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.
[0106] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.
[0107] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.
[0108] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.
[0109] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.
[0110] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.
[0111] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program code.
[0112] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.
Claims
1. A method for constructing a pressure sensor, characterized in that: include: Determine the sensitivity and pressure sensing range of the pressure sensor to be constructed; Determine a three-dimensional micro-nanostructure array according to the sensitivity and the pressure sensing range, and combine a plurality of the three-dimensional micro-nanostructure arrays into an elastic deformation layer; Determining a contact layer, a first electrode layer, and a second electrode layer, and assembling the contact layer, the first electrode layer, the elastic deformation layer, and the second electrode layer in sequence in a longitudinal direction to obtain a pressure sensor; Wherein, determining the first electrode layer and the second electrode layer includes: obtaining a plurality of electrode patterns; matching the plurality of electrode patterns with the sensitivity and the pressure sensing range to obtain a target electrode pattern matching the sensitivity and the pressure sensing range; generating a plurality of first electrode units according to the target electrode pattern, and constructing the first electrode layer through the plurality of first electrode units; generating a plurality of second electrode units according to the target electrode pattern, and constructing the second electrode layer through the plurality of second electrode units; Combining the plurality of three-dimensional micro-nanostructure arrays into an elastic deformation layer includes: arranging the plurality of three-dimensional micro-nanostructure arrays in a preset manner, and covering the top and bottom of the arranged plurality of three-dimensional micro-nanostructure arrays with elastic films to obtain the elastic deformation layer.
2. The method according to claim 1, characterized in that Determining the three-dimensional micro-nanostructure array by the sensitivity and the pressure sensing range includes: Obtain three-dimensional micro-nanostructures with various geometric shapes; Matching the geometric shapes of the plurality of three-dimensional micro-nano structures with the sensitivity and the pressure sensing range to obtain a target three-dimensional micro-nano structure matching the sensitivity and the pressure sensing range; Arranging a plurality of the target three-dimensional micro-nano structures into an initial three-dimensional micro-nano structure array, and adjusting the density and duty cycle of each target three-dimensional micro-nano structure in the initial three-dimensional micro-nano structure array to obtain the three-dimensional micro-nano structure array.
3. The method according to claim 1, characterized in that Constructing the first electrode layer by using a plurality of the first electrode units includes: Arranging a plurality of the first electrode units in an array, and connecting all the first electrode units in each row of the array to obtain the first electrode layer; Constructing the second electrode layer by using a plurality of the second electrode units includes: Arrange a plurality of the second electrode units in an array, and connect all the second electrode units in each column of the array to obtain the second electrode layer.
4. The method according to claim 1, wherein The material of the three-dimensional micro-nanostructure array is a conductive material.
5. The method according to claim 1, wherein The material of the three-dimensional micro-nano structure array is an insulating material.
6. A pressure sensor, characterized in that: include: A first electrode layer includes a first insulating substrate and a plurality of first electrode units arranged in a first arrangement above the first insulating substrate; an elastic deformation layer disposed on the first electrode layer, comprising a first elastic film, a second elastic film, and a plurality of three-dimensional micro-nanostructure units disposed between the first elastic film and the second elastic film, wherein each of the three-dimensional micro-nanostructure units is a three-dimensional micro-nanostructure array composed of a plurality of three-dimensional micro-nanostructures, and the plurality of three-dimensional micro-nanostructures are arranged into a three-dimensional micro-nanostructure array according to a preset density and a preset duty cycle; a second electrode layer, disposed on the elastic deformation layer, comprising a second insulating substrate, and a plurality of second electrode units arranged in a second arrangement below the second insulating substrate; a contact layer, disposed on the second electrode layer, comprising a substrate and a plurality of protruding structures distributed on the substrate; The first electrode layer and the second electrode layer are constructed by: obtaining a plurality of electrode patterns; determining the sensitivity and pressure sensing range of the pressure sensor to be constructed, matching the plurality of electrode patterns with the sensitivity and pressure sensing range, and obtaining a target electrode pattern that matches the sensitivity and pressure sensing range; generating a plurality of first electrode units according to the target electrode pattern, and constructing the first electrode layer through the plurality of first electrode units; generating a plurality of second electrode units according to the target electrode pattern, and constructing the second electrode layer through the plurality of second electrode units; The elastic deformation layer is obtained by arranging a plurality of the three-dimensional micro-nanostructure arrays in a preset manner, and covering the top and bottom of the arranged plurality of the three-dimensional micro-nanostructure arrays with elastic films to obtain the elastic deformation layer.
7. The pressure sensor according to claim 6, characterized in that The three-dimensional micro-nano structure is a micro-nano scale structure, and the shape of the three-dimensional micro-nano structure is at least one of the following: a hemisphere, a cylinder, and a cone.
8. The pressure sensor according to claim 6, wherein: The material of the three-dimensional micro-nano structure unit is an insulating material or a conductive material.
9. The pressure sensor according to claim 6, characterized in that The first arrangement method is to arrange the first electrode units in an array and connect all the first electrode units in each row of the array respectively. The second arrangement method is to arrange the second electrode units in an array and connect all the second electrode units in each column of the array respectively.
10. The pressure sensor according to claim 6, wherein The electrode pattern of the first electrode unit matches the shape of the projection of the micro-nano structure unit, and the electrode pattern of the second electrode unit matches the shape of the projection of the micro-nano structure unit.
11. The pressure sensor according to claim 6, wherein: The first electrode unit, the three-dimensional micro-nano structure unit, the second electrode unit and the protrusion-shaped structure correspond one to one in a vertical direction.
12. A processor, characterized in that: The processor is configured to run a program, wherein the program, when running, executes the method for constructing a pressure sensor according to any one of claims 1 to 5.
13. An electronic device, characterized in that: The device comprises one or more processors and a memory, wherein the memory is used to store one or more programs, wherein when the one or more programs are executed by the one or more processors, the one or more processors implement the method for constructing a pressure sensor according to any one of claims 1 to 5.
