Semiconductor process equipment and wafer in-situ temperature measurement method

Abstract

The present invention discloses a semiconductor process equipment and a wafer in-situ temperature measurement method, which relates to the field of semiconductor technology. The invention comprises: a controller, a process chamber, a base and a temperature measurement component arranged in the process chamber, wherein the base is used to carry and heat the wafer, and the temperature measurement component comprises a contact temperature measurement component and a non-contact temperature measurement component. The contact temperature measurement component is liftably arranged inside the base and is used to measure the temperature of the wafer when in contact with the wafer. The non-contact temperature measurement component is embedded inside the base. The controller is electrically connected to the contact temperature measurement part and the non-contact temperature measurement component, and is used to control the contact temperature measurement component to stay away from the wafer when the temperature of the wafer is greater than a preset temperature, and simultaneously turn on the non-contact temperature measurement component to continue measuring the temperature of the wafer. The invention solves the problem in the prior art that both contact temperature measurement and non-contact temperature measurement are difficult to meet the in-situ temperature measurement requirements for wafers in actual process processes.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and more specifically, relates to a semiconductor process equipment and a wafer in-situ temperature measurement method. Background Art

[0002] Many processes in integrated circuit chip manufacturing require high temperatures, such as furnace oxidation, atomic layer deposition (ALD), chemical vapor deposition (CVD), and annealing. Wafer temperature is a critical process parameter in these processes, making in-situ wafer temperature measurement a fundamental requirement for semiconductor processing equipment.

[0003] The mainstream methods of measuring wafer temperature in existing technologies include: thermocouple temperature measurement, thermal resistor temperature measurement, infrared temperature measurement and test paper temperature measurement. Among them, the temperature test paper cannot be measured in situ during the process, and the accuracy is not high, which is not suitable for mass-produced semiconductor process equipment. In actual use, the contact between thermocouple temperature measurement and the wafer will affect the cooling and heat dissipation of the wafer; thermal resistor temperature measurement and thermocouple temperature measurement are both contact temperature measurement and have certain similarities. Although infrared temperature measurement does not require contact with the wafer, it encounters the problem of difficulty in measuring the temperature of wafers in a low-temperature state, such as Figure 1 The figure shows the infrared light transmittance of silicon wafers at room temperature. When the wafer temperature is low (generally below 250°C), the wafer can transmit infrared light, resulting in inaccurate temperature measurement. For example, for HDPCVD equipment, infrared light transmits through the wafer, and what is measured is the temperature of the plasma above the wafer. Therefore, the effect of infrared temperature measurement on in-situ wafer temperature measurement in actual process is not ideal. Summary of the Invention

[0004] The purpose of the present invention is to provide a semiconductor process equipment and a wafer in-situ temperature measurement method to address the deficiencies in the prior art, so as to solve the problem that both contact temperature measurement and non-contact temperature measurement in the prior art are difficult to meet the in-situ temperature measurement requirements of wafers in the actual process.

[0005] In order to achieve the above object, the present invention provides a semiconductor process equipment, comprising:

[0006] A controller, a process chamber, and a base and a temperature measuring component arranged in the process chamber, the base is used to support and heat the wafer, the temperature measuring component includes a contact temperature measuring component and a non-contact temperature measuring component, the contact temperature measuring component is arranged in a liftable manner inside the base, and is used to measure the temperature of the wafer when in contact with the wafer, the non-contact temperature measuring component is embedded in the base, the controller is electrically connected to the contact temperature measuring part and the non-contact temperature measuring component, and is used to control the contact temperature measuring component to stay away from the wafer when the temperature of the wafer is greater than the preset temperature, and at the same time turn on the non-contact temperature measuring component to continue measuring the temperature of the wafer.

[0007] Optionally, the contact temperature measurement component includes a lifting assembly and a contact temperature detector, the lifting assembly is used to support and drive the contact temperature detector to rise and fall, the lifting assembly is electrically connected to the controller, and the controller is used to control the lifting assembly to drive the contact temperature detector away from the wafer when the temperature of the wafer is greater than the preset temperature.

[0008] Optionally, the temperature measurement component includes at least two contact temperature detectors, wherein one of the contact temperature detectors is arranged corresponding to the center of the wafer, and the other contact temperature detector is arranged corresponding to the edge of the wafer.

[0009] Optionally, the temperature measurement assembly includes non-contact temperature measurement components of the same number as the contact temperature detectors, and each non-contact temperature measurement component corresponds to each contact temperature detector one by one and is arranged adjacent to each contact temperature detector.

[0010] Optionally, the lifting assembly includes a driving source, a connecting rod, a gear and a plurality of supporting members, the driving source is located outside the process chamber and is electrically connected to the controller, the gear is embedded in the interior of the base, one end of the connecting rod is connected to the driving source, and the other end is provided with the gear, and the connecting rod can drive the gear to rotate under the drive of the driving source; the supporting members are arranged in a one-to-one correspondence with the contact temperature measuring components, and the supporting members are provided with a tooth structure that engages with the gear, and the plurality of supporting members can move along the tangential direction of the gear when the gear rotates to drive the contact temperature detector to rise and fall synchronously.

[0011] Optionally, the non-contact temperature measurement component includes an infrared thermometer, and the preset temperature is a critical temperature value at which infrared light cannot penetrate the wafer.

[0012] The present invention also provides a wafer in-situ temperature measurement method, comprising:

[0013] Placing a wafer on the base, controlling the contact temperature measuring component to contact the wafer, and turning on the contact temperature measuring component to measure the temperature of the wafer;

[0014] The wafer is heated. When the temperature of the wafer is greater than or equal to the preset temperature, the contact temperature measuring component is controlled to be away from the wafer, and the non-contact temperature measuring component is simultaneously turned on to continue measuring the temperature of the wafer.

[0015] Optionally, before heating the wafer, the method further comprises: determining whether a process set temperature value is greater than a preset temperature; when the process set temperature value is not greater than the preset temperature, contacting the wafer with the contact temperature measuring component to measure the temperature thereof, and heating the wafer until the temperature of the wafer reaches the process set temperature;

[0016] When the process set temperature value is greater than the preset temperature, the contact temperature measuring component contacts the wafer and measures its temperature, and heats the wafer until the temperature of the wafer reaches the preset temperature; the contact temperature measuring component is controlled to stay away from the wafer, and the non-contact temperature measuring component is synchronously turned on to continue measuring the temperature of the wafer, and continue heating the wafer until the temperature of the wafer reaches the process set temperature.

[0017] Optionally, when the process set temperature value is not greater than the preset temperature, the method further includes determining whether a first change in the temperature of the wafer during a first monitoring period is within a first change threshold range, and if so, continuing to heat the wafer until reaching the process set temperature;

[0018] If not, the process is stopped and a first alarm signal is issued.

[0019] Optionally, when the process set temperature value is greater than the preset temperature, the method further includes, when the contact temperature measuring component contacts the wafer and measures the temperature thereof, determining whether a second change in the temperature of the wafer during a second monitoring time period is within a second change threshold range, and if so, continuing to heat the wafer until it reaches the preset temperature;

[0020] If not, the process is stopped and a second alarm signal is issued.

[0021] The present invention provides a semiconductor process equipment and a wafer in-situ temperature measurement method, which has the beneficial effect that: the temperature measuring component is simultaneously provided with a contact temperature measuring component and a non-contact temperature measuring component. The contact temperature measuring component can contact with the wafer and perform contact temperature measurement when the wafer temperature is within a lower temperature range, thereby reducing the adverse effect of the contact temperature measuring component on the heat dissipation of the wafer due to contact with the wafer. When the wafer temperature reaches the temperature range, the contact temperature measuring component is removed so that it no longer affects the heat dissipation of the wafer, and the non-contact temperature measuring component can continue to perform non-contact temperature measurement on the wafer, thereby avoiding the problem of inaccurate temperature measurement results of the wafer due to non-contact temperature measurement when the wafer temperature is within the lower temperature range.

[0022] Other features and advantages of the present invention will be described in detail in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The above and other objects, features and advantages of the present invention will become more apparent through a more detailed description of exemplary embodiments of the present invention with reference to the accompanying drawings, wherein like reference numerals generally represent like components throughout the exemplary embodiments of the present invention.

[0024] Figure 1 A schematic diagram showing the infrared light transmittance of a silicon wafer at room temperature.

[0025] Figure 2 A schematic diagram of the internal structure of a reaction chamber of a semiconductor process equipment according to a first embodiment of the present invention is shown.

[0026] Figure 3 A schematic diagram showing the distribution of contact temperature measurement components and non-contact temperature measurement components of a semiconductor process equipment according to the first embodiment of the present invention is shown.

[0027] Figure 4 A structural schematic diagram of a semiconductor process equipment according to the first embodiment of the present invention is shown.

[0028] Figure 5 Another structural schematic diagram of a semiconductor process equipment according to the first embodiment of the present invention is shown.

[0029] Figure 6 A flow chart of a wafer in-situ temperature measurement method according to the second embodiment of the present invention is shown.

[0030] Description of reference numerals:

[0031] 1. Contact temperature measurement component; 2. Wafer; 3. Non-contact temperature measurement component; 4. Base; 5. Lifting assembly; 6. Process chamber; 7. Ejector pin. DETAILED DESCRIPTION

[0032] The preferred embodiments of the present invention will be described in more detail below. Although the preferred embodiments of the present invention are described below, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. Instead, these embodiments are provided to make the present invention more thorough and complete and to fully convey the scope of the present invention to those skilled in the art.

[0033] Example 1

[0034] like Figures 2 to 5 As shown, the present invention provides a semiconductor process equipment, comprising:

[0035] A controller, a process chamber 6, a base 4 and a temperature measuring component arranged in the process chamber 6, the base 4 is used to support and heat the wafer 2, the temperature measuring component includes a contact temperature measuring component 1 and a non-contact temperature measuring component 3, the contact temperature measuring component 1 can be raised and lowered inside the base 4, and is used to measure the temperature of the wafer 2 when it is in contact with the wafer 2, the non-contact temperature measuring component 3 is embedded in the base 4, the controller is electrically connected to the contact temperature measuring part and the non-contact temperature measuring component 3, and is used to control the contact temperature measuring component 1 to stay away from the wafer 2 when the temperature of the wafer 2 is greater than the preset temperature, and at the same time turn on the non-contact temperature measuring component 3 to continue measuring the temperature of the wafer 2.

[0036] Since the contact temperature measuring component 1 needs to be in contact with the wafer 2 when working, the contact between the contact temperature measuring component 1 and the wafer 2 will have an adverse effect on the heat dissipation of the wafer 2 when the temperature of the wafer 2 is high. The non-contact temperature measuring component 3 uses infrared temperature measurement. When the temperature of the wafer 2 is low, the infrared light can pass through the wafer 2. What is actually measured is the temperature of the environment on the back of the wafer 2, resulting in inaccurate temperature measurement of the wafer 2. To this end, the temperature measuring component is simultaneously provided with a contact temperature measuring component 1 and a non-contact temperature measuring component 3. The contact temperature measuring component 1 can contact with the wafer 2 and perform contact temperature measurement when the temperature of the wafer 2 is in a lower temperature range lower than the preset temperature, thereby reducing the adverse effect of the contact temperature measuring component 1 on the heat dissipation of the wafer 2 due to contact with the wafer 2. When the temperature of the wafer 2 is greater than the preset temperature, the contact temperature measuring component 1 is removed so that it no longer affects the heat dissipation of the wafer 2, and the non-contact temperature measuring component 3 can continue to perform non-contact temperature measurement on the wafer 2, thereby avoiding the problem of inaccurate temperature measurement results of the wafer 2 due to non-contact temperature measurement when the temperature of the wafer 2 is in a lower temperature range.

[0037] Taking a process flow in which the process set temperature value is higher than the preset temperature as an example, the contact temperature measurement component 1 contacts wafer 2 and performs contact temperature measurement on wafer 2 only when the wafer temperature is not greater than the preset temperature. Since the temperature of wafer 2 is still within a relatively low temperature range at this time, the contact between the contact temperature measurement component 1 and wafer 2 has little effect on the heat dissipation of wafer 2. When the wafer temperature reaches the preset temperature, the temperature of wafer 2 enters a relatively high temperature range. At this time, the contact temperature measurement component 1 moves away from wafer 2, detaches from the surface of wafer 2, and stops using contact temperature measurement on wafer 2. When the contact temperature measurement component 1 detaches from the surface of wafer 2 and stops using contact temperature measurement on wafer 2, the non-contact temperature measurement component 3 starts and can continue to use non-contact temperature measurement on wafer 2 until the temperature of wafer 2 reaches the process set temperature value.

[0038] The semiconductor processing equipment can be equipment capable of performing semiconductor process flows such as furnace oxidation, atomic layer deposition, chemical vapor deposition, and annealing. The aforementioned temperature measuring component can monitor the temperature of the wafer 2 in real time within the process chamber 6 and ensure the accuracy of the temperature measurement. The base 4 can be an electrostatic chuck or a mechanical chuck, both of which can respectively secure the wafer 2 through electrostatic adsorption and clamping with a pressure ring. A first hole and a second hole are provided within the base 4. The contact temperature measuring component 1 is movably disposed within the first hole, and the non-contact temperature measuring component 3 is fixedly disposed within the second hole. The two independently measure the temperature of the wafer 2.

[0039] Optionally, the contact temperature measuring component 1 includes a lifting assembly 5 and a contact temperature detector. The lifting assembly 5 is used to support and drive the contact temperature detector to rise and fall. The lifting assembly 5 is electrically connected to the controller. The controller is used to control the lifting assembly 5 to drive the contact temperature detector away from the wafer 2 when the temperature of the wafer 2 is greater than a preset temperature.

[0040] Specifically, for lifting components, such as Figure 4 As shown, the lifting assembly 5 can be a cylinder that passes through the bottom wall of the process chamber 6. The telescopic end of the cylinder is slidably arranged in the base 4 and connected to the contact temperature measuring component 1. As the cylinder is extended and retracted, it can drive the contact temperature sensor to rise and fall, thereby contacting and moving away from the lower surface of the wafer 2; Figure 5 As shown, the lifting component 5 can also be a linear stepper motor embedded in the base 4, and its output end is connected to the contact temperature measuring component 1. As the output end of the linear stepper motor expands and contracts, it can drive the contact temperature detector to rise and fall, and then contact and move away from the lower surface of the wafer 2; in another example, three liftable pins 7 are embedded in the base, and the three pins 7 are used to lift the wafer. The three pins 7 are connected to a pin lifting structure, and the lifting component 5 can also be a structure with the same structure as the pin lifting structure, as long as it can drive the contact temperature detector to rise and fall; for other implementations of the lifting component 5, those skilled in the art can set it according to actual needs, and will not be repeated here.

[0041] Optionally, the temperature measurement component includes at least two contact temperature detectors, wherein one contact temperature detector is arranged corresponding to the center of the wafer 2 , and the other contact temperature detector is arranged corresponding to the edge of the wafer 2 .

[0042] Specifically, at least two contact temperature detectors distributed along the radial direction of the wafer 2 are used to simultaneously perform contact temperature measurement on different positions of the wafer 2 , thereby improving the accuracy of temperature measurement of the wafer 2 .

[0043] Optionally, the temperature measurement assembly includes the same number of non-contact temperature measurement components 3 as the contact temperature detectors, and each non-contact temperature measurement component 3 corresponds to each contact temperature detector one by one and is arranged adjacent to each other.

[0044] Specifically, at least two non-contact temperature measuring components 3 distributed along the radial direction of the wafer 2 are used to simultaneously perform non-contact temperature measurement on different positions of the wafer 2, thereby improving the accuracy of temperature measurement of the wafer 2; the non-contact temperature measuring component 3 that is also at the center position of the wafer 2 or at the edge position of the wafer 2 can be installed adjacent to the contact temperature sensor, and the non-contact temperature measuring component 3 and the contact temperature sensor each measure the temperature independently.

[0045] Optionally, the lifting assembly 5 includes a driving source, a connecting rod, a gear and multiple supporting members. The driving source is located outside the process chamber 6 and is electrically connected to the controller. The gear is embedded in the base 4. One end of the connecting rod is connected to the driving source, and the other end is provided with a gear. The connecting rod can drive the gear to rotate under the drive of the driving source; the supporting members are arranged in a one-to-one correspondence with the contact temperature measuring component 1, and the supporting members are provided with a tooth structure that engages with the gear. The multiple supporting members can move along the tangential direction of the gear when the gear rotates to drive the contact temperature sensor to rise and fall synchronously.

[0046] Specifically, each contact thermometer is connected to a support member and is slidably arranged in the first hole. The driving source can be a driving motor. The driving motor drives the gear to rotate through a transmission structure that can change the transmission direction (such as mutually meshing bevel gears). The gear and the tooth structure on the support member are matched with each other. For example, the support member is provided with a rack that meshes with the gear. The support member is driven to rise and fall in the first hole, thereby realizing the lifting and lowering of the contact thermometer. Taking two contact thermometers as an example, there are two connecting rods, and the two ends of the two support rods are respectively provided with a first bevel gear and a gear. The output end of the driving motor is provided with a second bevel gear that meshes with the first bevel gear. In this way, one driving motor can be used to drive the two contact thermometers to rise and fall synchronously.

[0047] Optionally, the contact temperature detector includes at least one of a thermocouple or a thermal resistor.

[0048] Specifically, the characteristics of thermocouple temperature measurement are: high measurement accuracy and mature technology; simple and reliable production process and low cost; it must be in contact with the measuring medium to measure, but it can measure the temperature inside the object; slow response speed, it takes about 5 to 7 seconds to measure data; the operating temperature range is smaller than infrared temperature measurement, and it has a short life and high cost when used for high-temperature measurement; thermal resistance temperature measurement and thermocouple temperature measurement are both contact temperature measurement and have certain similarities. This application uses at least one of a thermocouple or a thermal resistor as a contact temperature detector, which is used to perform contact temperature measurement on wafer 2 when the temperature of wafer 2 is not greater than the preset temperature, ensuring measurement accuracy while having little effect on the heat dissipation of wafer 2, and detaching from wafer 2 when the temperature of wafer 2 is greater than the preset temperature, avoiding its application in high-temperature measurement environments and increasing its service life.

[0049] Optionally, the non-contact temperature measuring component 3 includes an infrared thermometer, and the preset temperature is a critical temperature value at which infrared light cannot penetrate the wafer 2 .

[0050] Specifically, the characteristics of temperature measurement by infrared thermometer are: stable operation, good repeatability, and long life; the instrument cost is relatively high; it is resistant to electromagnetic interference and can be applied to temperature measurement in vacuum, electromagnetic induction heating equipment and other environments; it can measure without contacting the measuring medium, but can only measure the temperature of the surface of the object; it has a fast response speed and can obtain data within about 1 second; it is difficult to measure low temperature conditions. The present application adopts an infrared thermometer to perform non-contact temperature measurement on wafer 2 when the temperature of wafer 2 is greater than the preset temperature, thereby avoiding its use in low temperature conditions and improving its temperature measurement accuracy. As the temperature of wafer 2 increases, when the temperature of wafer 2 reaches a critical temperature value, wafer 2 no longer has the ability to transmit infrared light, that is, infrared light cannot pass through wafer 2, so the temperature of wafer 2 measured by the infrared thermometer at this time is the accurate temperature of wafer 2; the temperature value of wafer 2 that makes infrared light unable to pass through wafer 2 is the above-mentioned critical temperature value, generally speaking, the critical temperature value is about 250°C.

[0051] Example 2

[0052] like Figure 6 As shown, the present invention also provides an in-situ temperature measurement method for wafer 2, comprising:

[0053] Place the wafer 2 on the base 4, control the contact temperature measuring component 1 to contact the wafer 2, and turn on the contact temperature measuring component 1 to measure the temperature of the wafer 2;

[0054] The wafer 2 is heated. When the temperature of the wafer 2 is greater than or equal to the preset temperature, the contact temperature measuring component 1 is controlled to be away from the wafer 2, and the non-contact temperature measuring component 3 is simultaneously turned on to continue measuring the temperature of the wafer 2.

[0055] In a process flow where the process set temperature value is higher than the set temperature range, the contact temperature measuring component 1 is used to contact the wafer 2 only when the temperature of the wafer 2 is within a lower temperature range lower than the preset temperature, and to perform contact temperature measurement on the wafer 2. Since the temperature of the wafer 2 is still within the lower temperature range at this time, the contact between the contact temperature measuring component 1 and the wafer 2 has little effect on the heat dissipation of the wafer 2. When the temperature of the wafer 2 is greater than or equal to the preset temperature and is within the higher temperature range, the contact temperature measuring component 1 is moved away from the wafer 2, separated from the surface of the wafer 2, and the contact temperature measurement of the wafer 2 is stopped. When the contact temperature measuring component 1 is separated from the surface of the wafer 2 and the contact temperature measurement of the wafer 2 is stopped, the non-contact temperature measuring component 3 is started, and the non-contact temperature measurement of the wafer 2 can be continued until the temperature of the wafer 2 reaches the process set temperature value. Alternatively, in a process flow where the process set temperature value is not higher than the set temperature range, only the contact temperature measuring component 1 can be used to perform contact temperature measurement on the wafer 2.

[0056] Optionally, before heating the wafer 2, the control method further includes: determining whether the process set temperature value is greater than a preset temperature; when the process set temperature value is not greater than the preset temperature, the contact temperature measuring component 1 contacts the wafer 2 and measures its temperature, and heats the wafer 2 until the temperature of the wafer 2 reaches the process set temperature;

[0057] When the process set temperature value is greater than the preset temperature, the contact temperature measuring component 1 contacts the wafer 2 and measures its temperature, and heats the wafer 2 until the temperature of the wafer 2 reaches the preset temperature; the contact temperature measuring component 1 is controlled to stay away from the wafer 2, and the non-contact temperature measuring component 3 is turned on simultaneously to continue measuring the temperature of the wafer 2 and continue heating the wafer 2 until the temperature of the wafer 2 reaches the process set temperature.

[0058] Specifically, since the contact temperature measuring component 1 needs to be in contact with the wafer 2 when working, the contact between the contact temperature measuring component 1 and the wafer 2 will have an adverse effect on the heat dissipation of the wafer 2 when the temperature of the wafer 2 is high. The non-contact temperature measuring component 3 uses infrared temperature measurement. When the temperature of the wafer 2 is low, the infrared light can pass through the wafer 2. What is actually measured is the temperature of the environment on the back of the wafer 2, resulting in inaccurate temperature measurement of the wafer 2. To this end, the wafer in-situ temperature measurement method simultaneously adopts a contact temperature measuring component 1 and a non-contact temperature measuring component 3. The contact temperature measuring component 1 can contact with the wafer 2 and perform contact temperature measurement when the temperature of the wafer 2 is within a lower temperature range (the process set temperature value is not greater than the preset temperature), thereby reducing the adverse effect of the contact temperature measuring component 1 on the heat dissipation of the wafer 2 due to contact with the wafer 2. When the temperature of the wafer 2 reaches the preset temperature range, the contact temperature measuring component 1 is removed so that it no longer affects the heat dissipation of the wafer 2, and the non-contact temperature measurement of the wafer 2 can continue to be performed non-contactly through the non-contact temperature measuring component 3, which also avoids the problem of inaccurate temperature measurement results of the wafer 2 due to non-contact temperature measurement when the temperature of the wafer 2 is within a lower temperature range.

[0059] Optionally, when the process set temperature value is not greater than the preset temperature, the control method further includes determining whether a first change in the temperature of the wafer 2 during the first monitoring time is within a first change threshold range, and if so, continuing to heat the wafer 2 until the process set temperature is reached;

[0060] If not, the process is stopped and a first alarm signal is issued.

[0061] Specifically, for a process flow when the process temperature is not higher than a preset temperature, the contact temperature measuring component 1 is used to contact the wafer 2 to monitor the temperature of the wafer 2 to obtain a first temperature measurement value, and the wafer 2 is heated; under normal circumstances, the temperature of the wafer 2 rises with the first temperature measurement value. When the first temperature measurement value rises to the process set temperature value, the process flow can be continued until the process flow is completed, and the first time duration used for the heating process fluctuates within a certain range; but if the contact temperature measuring component 1 or the heating component fails during this process, the first time duration used for the heating process will become very long, resulting in an abnormal process flow; therefore, based on the first monitoring time duration of the contact temperature measuring component 1 and the first change in the first temperature measurement value, it is determined whether to continue the process flow; if the first change in the first monitoring time duration is within the first change threshold range, it is determined that the heating condition of the wafer 2 is normal and the process flow is continued; if the first change in the first monitoring time duration is not within the first change threshold range, it is determined that the heating condition of the wafer 2 is abnormal, the process flow is stopped and a first alarm signal is issued to remind the staff to check whether the contact temperature measuring component 1 is working normally and whether the heating component is working normally.

[0062] Optionally, when the process set temperature value is greater than the preset temperature, the control method further includes, when the contact temperature measuring component 1 contacts the wafer 2 and measures its temperature, determining whether a second change in the temperature of the wafer 2 during the second monitoring time is within a second change threshold range, and if so, continuing to heat the wafer 2 until it reaches the preset temperature;

[0063] If not, the process is stopped and a second alarm signal is issued.

[0064] When the process set temperature value is greater than the preset temperature, the contact temperature measuring component 1 contacts the wafer 2 to monitor the temperature of the wafer 2 to obtain a first temperature measurement value, and the wafer 2 is heated. When the first temperature measurement value is not less than the preset temperature, the contact temperature measuring component 1 is moved away from the wafer 2, and the non-contact temperature measuring component 3 continues to monitor the temperature of the wafer 2 to obtain a second temperature measurement value. During the process of the contact temperature measuring component 1 contacting the wafer 2 and measuring its temperature, when the first temperature measurement value is not greater than the preset temperature, the second monitoring time and the second change in the first temperature measurement value determine whether to continue the process flow. If the second change in the second monitoring time is within the second change threshold range, the process flow continues. If the second change in the second monitoring time is not within the second change threshold range, the process flow is stopped and a second alarm signal is issued. Taking the example of wafer 2 with an initial temperature of room temperature, the first temperature measurement value starts to rise from room temperature until the temperature of wafer 2 reaches the preset temperature, and the second time duration used for the heating process fluctuates within a certain range. However, if the contact temperature measuring component 1 or the heating component fails during this process, the second time duration used for the heating process will become very long, resulting in an abnormal process flow. Therefore, whether to continue the process flow is determined based on the second monitoring time duration of the contact temperature measuring component 1 and the second change in the first temperature measurement value. If the second change in the second monitoring time duration is within the second change threshold range, it is determined that the heating condition of wafer 2 is normal and the process flow is continued. If the second change in the second monitoring time duration is not within the second change threshold range, it is determined that the heating condition of wafer 2 is abnormal, the process flow is stopped and a second alarm signal is issued to remind the staff to check whether the contact temperature measuring component 1 is working normally and whether the heating component is working normally.

[0065] In summary, when the wafer in-situ temperature measurement method provided by the present invention is applied to a semiconductor process flow:

[0066] Step 1: The wafer 2 is introduced into the process chamber 6. If the electrostatic base 4 in the process chamber 6 carries the wafer 2, the wafer 2 is electrostatically adsorbed. If the base 4 is a mechanical chuck, the wafer 2 is fixed by a pressure ring.

[0067] Step 2: Set a preset temperature. In this embodiment, the preset temperature is set to 250° C.

[0068] Step 3: Raise the thermocouple so that it contacts the lower surface of wafer 2;

[0069] Step 4: Determine whether the thermocouple is in contact with wafer 2. If so, proceed to the next step. If not, continue raising the thermocouple. Here, a photoelectric sensor can be provided on one side of the thermocouple to determine whether the thermocouple is raised to the correct position. Of course, other determination methods can also be used, which will not be described in detail here.

[0070] Step 5: Turn on the thermocouple to measure the temperature of wafer 2 and turn on the heating component. Taking the HDPCVD process as an example, the process flow is to first introduce gas and then start the ignition, and heat wafer 2 through the effect of radio frequency.

[0071] Step 6: Determine whether the thermal process set temperature value is greater than the preset temperature;

[0072] 6.1. If the process set temperature value is greater than the preset temperature, continue to heat wafer 2 to determine whether the first temperature measurement value has reached the preset temperature; 6.1.1. If the first temperature measurement value has reached the preset temperature, lower the thermocouple so that it is no longer in contact with wafer 2, stop contact temperature measurement of wafer 2, and turn on the infrared thermometer to perform non-contact temperature measurement on wafer 2 to determine whether the second temperature measurement value monitored by the infrared thermometer has reached the process temperature; 6.1.2. If the first temperature measurement value has not reached the preset temperature, determine whether the second change in the first temperature measurement value within the second monitoring time of the thermocouple is within the second change threshold range If the second variation is within the second variation threshold, the wafer 2 continues to be heated. If the second variation is not within the second variation threshold, the process flow is stopped and a second alarm signal is issued to remind the staff to check whether the thermocouple and its lifting assembly 5 are working properly and whether the heating assembly is working properly. 6.1.1.1. If the second temperature measurement value reaches the process temperature, the main process is carried out. After the main process is completed, the wafer 2 is desorbed or the pressure ring is released, and the wafer 2 is transferred out of the process chamber 6, and the process flow is ended. 6.1.1.2. If the second temperature measurement value does not reach the process temperature, the wafer 2 continues to be heated.

[0073] 6.2. If the process set temperature value is not greater than the preset temperature, continue to heat the wafer 2 and determine whether the first temperature measurement value has reached the process temperature; 6.2.1. If the first temperature measurement value has reached the process temperature, proceed with the main process. After the main process is completed, desorb the wafer 2 or release the pressure ring, and transfer the wafer 2 out of the process chamber 6 to end the process flow; 6.2.2. If the first temperature measurement value does not reach the process temperature, determine whether the first change in the first temperature measurement value within the first monitoring time of the thermocouple is within the first change threshold range. If the first change is within the first change threshold range, continue to heat the wafer 2. If the first change is not within the first change threshold range, stop the process flow and issue a first alarm signal to remind the staff to check whether the thermocouple and its lifting component 5 are working normally and whether the heating component is working normally.

[0074] It should be pointed out in particular that for semiconductor process equipment such as HDPCVD that achieves wafer 2 heating through plasma ignition, if the technical solution in this application is not adopted, due to the transmittance of infrared light to wafer 2 at low temperatures, the temperature measurement of the infrared thermometer will measure the temperature of the plasma above the wafer 2, and the temperature of the plasma is significantly higher than the actual temperature of the wafer 2, which will cause the machine to misjudge and stop the plasma ignition heating. Therefore, the actual temperature of the wafer 2 will never reach the process set temperature value; the use of the wafer in-situ temperature measurement method in this application can effectively avoid the occurrence of the above situation.

[0075] While various embodiments of the present invention have been described above, the above description is intended to be illustrative, not exhaustive, and not limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments.

Claims

1. A semiconductor process equipment, characterized in that: include: A controller, a process chamber, and a base and a temperature measuring component arranged in the process chamber, the base is used to support and heat the wafer, the temperature measuring component includes a contact temperature measuring component and a non-contact temperature measuring component, the contact temperature measuring component can be raised and lowered inside the base, and is used to measure the temperature of the wafer when in contact with the wafer, the contact temperature measuring component contacts the wafer when the temperature of the wafer is not greater than a preset temperature, the non-contact temperature measuring component is embedded in the base, the controller is electrically connected to the contact temperature measuring component and the non-contact temperature measuring component, and is used to control the contact temperature measuring component to stay away from the wafer when the temperature of the wafer is greater than the preset temperature, and at the same time turn on the non-contact temperature measuring component to continue measuring the temperature of the wafer.

2. The semiconductor process equipment according to claim 1, wherein: The contact temperature measurement component includes a lifting assembly and a contact temperature detector. The lifting assembly is used to support and drive the contact temperature detector to rise and fall. The lifting assembly is electrically connected to the controller. The controller is used to control the lifting assembly to drive the contact temperature detector away from the wafer when the temperature of the wafer is greater than the preset temperature.

3. The semiconductor process equipment according to claim 2, wherein: The temperature measurement component includes at least two contact temperature detectors, wherein one of the contact temperature detectors is arranged corresponding to the center of the wafer, and the other contact temperature detector is arranged corresponding to the edge of the wafer.

4. The semiconductor process equipment according to claim 3, wherein: The temperature measuring assembly includes non-contact temperature measuring components having the same number as the contact temperature measuring devices, and each of the non-contact temperature measuring components corresponds to each of the contact temperature measuring devices one by one and is arranged adjacent to each of the contact temperature measuring devices.

5. The semiconductor process equipment according to claim 3, wherein: The lifting assembly includes a driving source, a connecting rod, a gear and a plurality of supporting members. The driving source is located outside the process chamber and is electrically connected to the controller. The gear is embedded in the base. One end of the connecting rod is connected to the driving source, and the other end is provided with the gear. The connecting rod can drive the gear to rotate under the drive of the driving source; the supporting members are arranged in a one-to-one correspondence with the contact temperature measuring components, and the supporting members are provided with a tooth structure that engages with the gear. The plurality of supporting members can move along the tangential direction of the gear when the gear rotates to drive the contact temperature detector to rise and fall synchronously.

6. The semiconductor process equipment according to claim 1, wherein: The non-contact temperature measurement component includes an infrared thermometer, and the preset temperature is a critical temperature value at which infrared light cannot penetrate the wafer.

7. A wafer in-situ temperature measurement method, characterized in that: include: Placing the wafer on the base, controlling the contact temperature measuring component to contact the wafer, and turning on the contact temperature measuring component to measure the temperature of the wafer; The wafer is heated. When the temperature of the wafer is greater than or equal to the preset temperature, the contact temperature measuring component is controlled to be away from the wafer, and the non-contact temperature measuring component is turned on simultaneously to continue measuring the temperature of the wafer.

8. The method according to claim 7, characterized in that Before heating the wafer, the method further includes determining whether a process set temperature value is greater than a preset temperature; when the process set temperature value is not greater than the preset temperature, contacting the wafer with the contact temperature measuring component to measure the temperature thereof, and heating the wafer until the temperature of the wafer reaches the process set temperature; When the process set temperature value is greater than the preset temperature, the contact temperature measuring component contacts the wafer and measures its temperature, and heats the wafer until the temperature of the wafer reaches the preset temperature; the contact temperature measuring component is controlled to stay away from the wafer, and the non-contact temperature measuring component is synchronously turned on to continue measuring the temperature of the wafer, and continue heating the wafer until the temperature of the wafer reaches the process set temperature.

9. The method according to claim 8, characterized in that When the process set temperature value is not greater than the preset temperature, the method further includes determining whether a first change in the temperature of the wafer during a first monitoring period is within a first change threshold, and if so, continuing to heat the wafer until the process set temperature is reached; If not, the process is stopped and a first alarm signal is issued.

10. The method according to claim 8, characterized in that When the process set temperature value is greater than the preset temperature, the method further includes, when the contact temperature measuring component contacts the wafer and measures the temperature thereof, determining whether a second change in the temperature of the wafer during a second monitoring period is within a second change threshold range, and if so, continuing to heat the wafer until it reaches the preset temperature; If not, the process is stopped and a second alarm signal is issued.

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