Ion beam etching method and chip

Abstract

The application relates to the technical field of chip manufacturing, and particularly discloses an ion beam etching method and a chip. The ion beam etching method comprises the following steps: providing a substrate, and covering a material to be etched on the upper surface of the substrate; covering photoresist on the upper surface of the material, wherein the photoresist comprises first photoresist and second photoresist, the first photoresist is covered on the upper surface of the material, the second photoresist is covered on the upper surface of the first photoresist after solidification treatment of the first photoresist, and the first photoresist comprises any one of LOR photoresist and PMGI photoresist; and performing pattern treatment on the material through photo etching. The method solves the problem of difficult removal of photoresist after the existing photoetching technology.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chip manufacturing, and particularly relates to an ion beam etching method and a chip. BACKGROUND

[0002] The development of chip manufacturing technology promotes the continuous upgrading of electronic products, and the patterning technology is one of the key steps of the chip manufacturing technology. At present, the main method of the patterning technology is photolithography and etching technology, and the existing ion beam etching often causes subsequent difficulties in removing glue, thereby causing poor contact of the chip, affecting the use performance of the chip, and reducing the yield of the chip. Therefore, a method is needed to solve the problem of subsequent difficulty in removing glue of the existing ion beam etching technology.

[0003] SUMMARY

[0004] The main purpose of the present application is to provide an ion beam etching method, which aims to solve the problem of subsequent difficulty in removing glue of the existing ion beam etching technology.

[0005] In a first aspect, the present application provides an ion beam etching method, which comprises the following steps:

[0006] An ion beam etching method, characterized in that the ion beam etching method comprises:

[0007] providing a substrate, and covering a material to be etched on the upper surface of the substrate;

[0008] covering photoresist on the upper surface of the material, wherein the covering photoresist on the upper surface of the material comprises covering the first photoresist on the upper surface of the material, and covering the second photoresist on the upper surface of the first photoresist after solidification treatment of the first photoresist, and the first photoresist comprises any one of LOR photoresist and PMGI photoresist;

[0009] performing patterning treatment on the material by photo etching.

[0010] In a possible implementation, the performing patterning treatment on the material by photo etching comprises:

[0011] exposing the upper surface of the photoresist to light using the prepared mask plate;

[0012] developing the photoresist to form the required pattern on the upper surface of the photoresist;

[0013] stripping the second photoresist to obtain a required substrate, and the substrate comprises the substrate, the material and the first photoresist;

[0014] performing a patterning process on the material based on the pattern;

[0015] stripping the first photoresist.

[0016] In a possible implementation, the stripping the second photoresist comprises: stripping the second photoresist by using a plasma stripping method.

[0017] In a possible implementation, the stripping the first photoresist comprises: stripping the first photoresist by using a stripping liquid, the stripping liquid comprising any one of acetone, N-methyl pyrrolidone, Remover PG stripper, and dimethyl sulfoxide.

[0018] In a possible implementation, the solidification process on the first photoresist comprises: performing the solidification process on the first photoresist in a non-oxidizing atmosphere.

[0019] In a possible implementation, the material has a thickness of 0.02-1 μm.

[0020] In a possible implementation, the first photoresist has a thickness of 50-80 times of the thickness of the material.

[0021] In a possible implementation, the second photoresist has a thickness of 0.5-1.5 μm.

[0022] In a possible implementation, the second photoresist comprises any positive photoresist or any negative photoresist.

[0023] In a second aspect, the present application provides a chip, a preparation process of the chip comprising the ion beam etching method according to any one of the above.

[0024] The present application provides an ion beam etching method and a chip, the present application uses the easy stripping characteristic of the first photoresist, first, a first photoresist is superimposed between a material to be etched and a second photoresist, then the material to be etched is patterned by photo etching, which solves the problem of difficult subsequent stripping of the existing ion beam etching technology. BRIEF DESCRIPTION OF DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative labor.

[0026] Figure 1 A flow chart of the ion beam etching method provided by the embodiments of the present application;

[0027] Figure 2 This is a simplified schematic diagram obtained in step S100 of the ion beam etching method provided in this application;

[0028] Figure 3 This is a simplified schematic diagram obtained in step S200 of the ion beam etching method provided in this application;

[0029] Figure 4 This is a simplified schematic diagram obtained in step S300 of the ion beam etching method provided in this application;

[0030] Figure 5 This is a simplified schematic diagram obtained in step S320 of the ion beam etching method provided in this application;

[0031] Figure 6 This is a simplified schematic diagram obtained in step S330 of the ion beam etching method provided in this application; DETAILED DESCRIPTION

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0033] It should also be understood that the terms used in this specification are for the purpose of describing specific embodiments only and are not intended to limit the present application. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly indicates otherwise.

[0034] It should be further understood that the term "and / or" used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0035] The flowcharts shown in the accompanying drawings are for illustrative purposes only and do not necessarily include all contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps may be decomposed, combined, or partially merged, so the actual execution order may vary depending on the actual situation.

[0036] With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments of the present application, all the other embodiments obtained by a person of ordinary skill in the art without creative effort belong to the scope of the present application.

[0037] Please refer to Figure 1 , Figure 1 The flowchart of the ion beam etching method provided by the embodiments of the present application is shown in the figure. The ion beam etching method comprises the following steps S100 to S300. Please refer to Figures 2 to 6 .

[0038] Step S100, providing a substrate, and covering a material to be etched on the upper surface of the substrate.

[0039] The substrate 10 is a material with high hardness, for example, glass, flexible steel plate, rigid steel plate, diamond, silicon carbide (chemical formula: SiC) and gallium arsenide (chemical formula: GaAs), etc. The shape, size and thickness of the substrate 10 are not limited in the present application, and can be selected according to actual needs, for example, can be any one of cylindrical sheet, cuboid sheet, triangular prism sheet and square sheet, etc. The material 20 can be any one of gold (chemical formula: Au), platinum (chemical formula: Pt), silicon dioxide (chemical formula: SiO2), nickel (chemical formula: Ni), iron (chemical formula: Fe), chromium (chemical formula: Cr) and insoluble metal, etc.

[0040] The present application can use coating method or deposition method to cover the material 20 to be etched on the upper surface of the substrate 10. The deposition method can be physical vapor deposition or chemical vapor deposition.

[0041] Step S200, covering photoresist on the upper surface of the material, wherein covering photoresist on the upper surface of the material comprises: covering the first photoresist on the upper surface of the material, and covering the second photoresist on the upper surface of the first photoresist after curing treatment of the first photoresist, the first photoresist comprising any one of LOR photoresist and PMGI photoresist.

[0042] In some embodiments, the photoresist 30 can be covered on the upper surface of the material by using a coating machine in a spin coating or spray coating manner. In this embodiment, the photoresist 30 is uniformly covered on the upper surface of the material 20.

[0043] The specific method for curing the first photoresist 31 is to first place the substrate 10 covered with the first photoresist 31 in a vacuum drying oven with a temperature of 150-250°C, and then vacuumize the vacuum drying oven for 20 minutes at a pressure of 0.01 Pa and keep the temperature for 1-10 minutes.

[0044] In some embodiments, the curing of the first photoresist 31 is performed in a non-oxidizing atmosphere, such as an argon (chemical formula: Ar) or nitrogen (chemical formula: N2) atmosphere, so as to prevent the first photoresist 31 and the material 20 from being oxidized at a high temperature and affecting the performance of the chip.

[0045] In some embodiments, the thickness δ1 of the material 20 is 0.02-1 μm. When δ1 is less than 0.02 μm, the pattern of the material 20 after the patterning process is blurred, which affects the performance of the chip. When δ1 is greater than 1 μm, it will cause waste and result in certain economic loss.

[0046] In some embodiments, the thickness δ2 of the first photoresist 31 is 50-80 times the thickness of the material 20. When δ2 is less than 50 times δ1, the first photoresist 31 is easily lost during the patterning process of the material 20. When δ2 is greater than 80 times δ1, the first photoresist 31 is easily collapsed during the patterning process of the material 20.

[0047] In some embodiments, the thickness δ3 of the second photoresist 32 is 0.5-1.5 μm. When δ3 is less than 0.5 μm, it will affect the patterning process of the material 20, and specifically, it will make the development of the photoresist 30 difficult to control. When δ3 is greater than 1.5 μm, it will cause waste and result in certain economic loss.

[0048] In some embodiments, the second photoresist 31 includes any positive photoresist or any negative photoresist. For example, the positive photoresist can be S1800 series photoresist, BCI-3511 photoresist, SPR955 photoresist or AZ1500 series photoresist, and the negative photoresist can be N244 photoresist, ma-N1400 series photoresist or ma-N400 series photoresist.

[0049] Step S300: performing a patterning process on the material by photolithography.

[0050] In some embodiments, step S300 further includes steps S310-S350.

[0051] S310: exposing the upper surface of the photoresist 30 using the prepared mask.

[0052] The pattern on the mask is designed according to the performance required by the subsequent chip. In the operation process, the mask is first horizontally placed on the upper surface of the photoresist 30, and then the upper surface of the photoresist 30 is placed in a light environment.

[0053] S320, the photoresist 30 is developed to form the required pattern on the upper surface of the photoresist.

[0054] After the upper surface of the photoresist 30 is exposed, if the second photoresist 32 is a positive photoresist, the part of the photoresist 30 that has been exposed is dissolved by the developing solution, exposing the etching area, i.e. the pattern. If the second photoresist 32 is a negative photoresist, the part of the photoresist 30 that has not been exposed is dissolved by the developing solution, exposing the etching area, i.e. the pattern. Exemplarily, as shown in Figure 5 , the protruding part is the etching area.

[0055] S330, the second photoresist 32 is stripped to obtain the required substrate, which includes the substrate 10, the material 20 and the first photoresist 31.

[0056] In some embodiments, the second photoresist 32 is stripped by plasma stripping method. In this embodiment, the first photoresist 31 is prevented from being stripped at the same time as the second photoresist 32, which affects the subsequent patterning process of the material 20. In practical applications, the second photoresist 32 can be stripped in a plasma stripping machine or an ion beam etching machine. Exemplarily, as shown in Figure 6 , the substrate obtained in step S330.

[0057] S340, the material 20 is patterned based on the pattern.

[0058] In step S340 of the present application, the material 20 is patterned by ion beam etching method. Specifically, the substrate is placed in an ion beam etching machine with a pressure of 0.01-0.03 Pa, an Ar or N2 flow rate of 5-20 sccm, an ion beam energy of 400-600 eV, an ion beam current of 80-150 mA, a substrate table inclination angle of 10°-80°, a substrate table temperature of about 0°C and a substrate table rotation speed of 5-10 rpm. The etching time is selected according to the thickness δ1 of the material, for example, when the thickness δ1 of the material is 0.5 μm, the etching time is 10 min, and when the thickness of the material is 0.8 μm, the etching time is 16 min. Understandably, the etching part provided by the embodiments of the present application is Figure 5 or Figure 6 the protruding part.

[0059] S350, the first photoresist is stripped.

[0060] After step S340, the first photoresist 31 needs to be stripped to obtain the final required sample. Exemplarily, as shown in Figure 4 the sample provided by the embodiment of the present application.

[0061] In some embodiments, the first photoresist 31 is stripped by a stripping liquid, which includes any one of acetone, N-methyl pyrrolidone, Remover PG stripper and dimethyl sulfoxide. In this embodiment, the damage to the material 20 in the process of stripping the first photoresist 31 is prevented, and the stripping effect is enhanced. The stripping liquid can be heated to 80-100℃.

[0062] After the first photoresist 31 is stripped by the stripping liquid, the sample is cleaned by deionized water or anhydrous ethanol and then dried. The drying method includes any one of blowing, baking or air drying.

[0063] The embodiment of the present application also provides a chip, and the preparation process of the chip includes the ion beam etching method described above. Since the preparation process of the chip includes the ion beam etching method described above, the yield of the finished chip is high, and the performance of the chip is good.

[0064] To better illustrate the technical solutions of the present application, the following embodiments are further explained.

[0065] Embodiment 1

[0066] An etching method, the steps are as follows:

[0067] In step S100, a cylindrical SiC with a thickness of 0.5 mm and a radius of 2 cm is provided as a substrate 10, and a platinum film with a thickness of 0.03 μm is deposited on the upper surface of the substrate 10 by physical vapor deposition.

[0068] In step S100, the upper surface of the platinum film 20 is covered with a photoresist 30. Specifically, a layer of LOR photoresist 31 with a thickness of 1.8 μm is sprayed on the upper surface of the platinum film 20 by a coating machine, and after curing treatment of the LOR photoresist 31, a layer of S1805 photoresist 32 with a thickness of 1.0 μm is sprayed on the upper surface of the LOR photoresist 31 by the coating machine.

[0069] The specific method for curing treatment of the LOR photoresist 31 is that the substrate 31 covered with the LOR photoresist 31 is first placed in a vacuum drying box with a temperature of 180℃ and an atmosphere of N2, and then the vacuum drying box is vacuumed for 20 minutes under a pressure of 0.01 pa and kept for 5 minutes.

[0070] Step S300, the platinum-gold film 20 is patterned by photoetching.

[0071] Step S300 specifically includes steps S310 to S350.

[0072] Step S310, the prepared mask is horizontally placed on the upper surface of the photoresist 30, and then the upper surface of the photoresist 30 is placed in a light environment.

[0073] Step S320, the part of the photoresist 30 that has been exposed to light is dissolved away with a developing solution, exposing the etching area, i.e. the pattern, which is a raised part as shown in the figure. Figure 5

[0074] Step S330, the S1805 photoresist 32 is peeled off in a plasma stripping machine, obtaining the required substrate. As shown in the figure, the substrate obtained in step S330. Figure 6

[0075] Step S340, the platinum-gold film 20 is patterned based on the pattern.

[0076] The specific operation method of step S340 is: placing the substrate in an ion beam etching machine with a pressure of 0.02 Pa and an Ar flow rate of 10 sccm, adjusting the ion beam energy to 500 eV, the ion beam current to 100 mA, the inclination angle of the substrate table to 45°, the temperature of the substrate table to 0°C, the rotation speed of the substrate table to 6 rpm, and the etching time to 36 s.

[0077] Step S350, the LOR photoresist 31 is peeled off in acetone at a temperature of 85°C, obtaining the required sample, which is rinsed with deionized water and then blown dry.

[0078] Example 2

[0079] An etching method, the steps are as follows:

[0080] Step S100, a cuboid flexible steel plate with a thickness of 0.5 mm, a length of 3 cm, and a width of 2 cm is provided as a substrate 10, and a platinum-gold film with a thickness of 0.03 μm is deposited on the upper surface of the substrate 10 by physical vapor deposition.

[0081] Step S100, the photoresist 30 is covered on the upper surface of the platinum-gold film 20, wherein covering the photoresist 30 on the platinum-gold film 20 includes: using a coating machine to spray a layer of PMGI photoresist 31 with a thickness of 1.8 μm on the upper surface of the platinum-gold film 20, and then using the coating machine to spray a layer of S1805 photoresist 32 with a thickness of 1.0 μm on the upper surface of the PMGI photoresist 31 after curing treatment of the PMGI photoresist 31. ​​

[0082] The specific method for curing the PMGI photoresist 31 is to first place the substrate 31 covered with the PMGI photoresist 31 in a vacuum drying box with a temperature of 180°C and an N2 atmosphere, then vacuumize the vacuum drying box for 20 minutes under a pressure of 0.01 Pa and keep it for 5 minutes.

[0083] Step S300, pattern the platinum-gold film 20 by photolithography.

[0084] Step S300 specifically includes steps S310 to S350.

[0085] Step S310, place the prepared mask horizontally on the upper surface of the photoresist 30, and then place the upper surface of the photoresist 30 in a light environment.

[0086] Step S320, dissolve the part of the photoresist 30 that has been exposed to light with a developing solution, exposing the etching area, i.e. the pattern, as shown in the raised part. Figure 5

[0087] Step S330, strip the photoresist 32 in the plasma stripping machine to obtain the required substrate. As shown in the substrate obtained in step S330. Figure 6

[0088] Step S340, pattern the platinum-gold film 20 based on the pattern.

[0089] The specific operation method of step S340 is to place the substrate in an ion beam etching machine with a pressure of 0.02 Pa and an Ar flow rate of 10 sccm, adjust the ion beam energy to 500 eV, the ion beam current to 100 mA, the inclination angle of the substrate table to 45°, the temperature of the substrate table to 0°C, the rotation speed of the substrate table to 6 rpm, and the etching time to 36 s.

[0090] Step S350, strip the PMGI photoresist 31 in acetone at a temperature of 85°C to obtain the required sample, and then rinse the sample with deionized water and dry it.

[0091] Example 3

[0092] An etching method, the steps are as follows:

[0093] Step S100, provide a cuboid flexible steel plate with a thickness of 0.5 mm, a length of 3 cm, and a width of 2 cm as a substrate 10, and deposit a platinum-gold film with a thickness of 0.5 μm on the upper surface of the substrate 10 by physical vapor deposition.

[0094] ​​Step S100, covering photoresist 30 on the upper surface of the platinum film 20, wherein covering photoresist 30 on the platinum film 20 includes using a glue coating machine to spray a layer of PMGI photoresist 31 with a thickness of 1.8 μm on the upper surface of the platinum film 20, and after curing treatment of the PMGI photoresist 31, using a glue coating machine to spray a layer of S1805 photoresist 32 with a thickness of 1.0 μm on the upper surface of the PMGI photoresist 31.

[0095] The specific method for curing treatment of the PMGI photoresist 31 is to first place the substrate 31 covered with the PMGI photoresist 31 in a vacuum drying box with a temperature of 160°C and an N2 atmosphere, and then vacuumize the vacuum drying box for 20 minutes at a pressure of 0.01 pa and keep warm for 6 minutes.

[0096] Step S300, performing pattern processing on the platinum film 20 by photolithography.

[0097] Step S300 specifically includes steps S310 to S350.

[0098] Step S310, horizontally placing the prepared mask on the upper surface of the photoresist 30, and then placing the upper surface of the photoresist 30 in a light environment.

[0099] Step S320, dissolving the part of the photoresist 30 that has been exposed to light with a developing solution, exposing the etching area, i.e. the pattern, which is a raised part as shown in Figure 5 .

[0100] Step S330, peeling off the S1805 photoresist 32 in a plasma stripping machine to obtain the required substrate. As shown in Figure 6 , the substrate obtained in step S330.

[0101] Step S340, performing pattern processing on the platinum film 20 based on the pattern.

[0102] The specific operation method of step S340 is to place the substrate in an ion beam etching machine with a pressure of 0.02 Pa and an N2 flow rate of 10 sccm, adjust the energy of the ion beam to 500 eV, the beam current of the ion beam to 100 mA, the inclination angle of the substrate table to 45°, the temperature of the substrate table to 0°C, the rotation speed of the substrate table to 6 rpm, and the etching time to 10 minutes.

[0103] Step S350, peeling off the PMGI photoresist 31 in acetone at a temperature of 85°C to obtain the required sample, and then rinsing the sample with deionized water and blowing dry.

[0104] The above merely provides a specific implementation of the present application, but the protection scope of the present application is not limited thereto, and any skilled person in the art can easily think of various equivalent modifications or replacements within the technical range disclosed by the present application, and these modifications or replacements should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An ion beam etching method, characterized in that: The ion beam etching method comprises: Providing a substrate, wherein the upper surface of the substrate is covered with a material to be etched; Covering the upper surface of the material with a photoresist, wherein the photoresist includes a first photoresist and a second photoresist, wherein covering the upper surface of the material with the photoresist includes: covering the upper surface of the material with the first photoresist, and curing the first photoresist and then covering the upper surface of the first photoresist with the second photoresist, wherein the first photoresist includes any one of LOR photoresist and PMGI photoresist; The material is patterned by photolithography, including: exposing the upper surface of the photoresist using a prepared mask; developing the photoresist to form a desired pattern on the upper surface of the photoresist; stripping the second photoresist, including: stripping the second photoresist using a plasma stripping method; obtaining a desired substrate, the substrate including a base plate, the material and the first photoresist; patterning the material based on the pattern; stripping the first photoresist, including: stripping the first photoresist using a stripping solution, the stripping solution including any one of acetone, N-methylpyrrolidone, Remover PG stripping agent and dimethyl sulfoxide.

2. The ion beam etching method according to claim 1, wherein: The curing of the first photoresist includes curing the first photoresist in a non-oxidizing atmosphere.

3. The ion beam etching method according to claim 1, wherein: The thickness of the material is 0.02-1 μm.

4. The ion beam etching method according to claim 1, wherein: The thickness of the first photoresist is 50 to 80 times the thickness of the material.

5. The ion beam etching method according to claim 1, wherein: The thickness of the second photoresist is 0.5-1.5 μm.

6. The ion beam etching method according to claim 1, wherein: The second photoresist includes any positive photoresist or any negative photoresist.

7. A chip, characterized in that: The chip preparation process includes the ion beam etching method according to any one of claims 1 to 6.

Images